JP2008186892A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

Info

Publication number
JP2008186892A
JP2008186892A JP2007017562A JP2007017562A JP2008186892A JP 2008186892 A JP2008186892 A JP 2008186892A JP 2007017562 A JP2007017562 A JP 2007017562A JP 2007017562 A JP2007017562 A JP 2007017562A JP 2008186892 A JP2008186892 A JP 2008186892A
Authority
JP
Japan
Prior art keywords
semiconductor light
light emitting
emitting device
substrate
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007017562A
Other languages
Japanese (ja)
Inventor
Yasuo Nakanishi
康夫 中西
Showa Takao
将和 高尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2007017562A priority Critical patent/JP2008186892A/en
Publication of JP2008186892A publication Critical patent/JP2008186892A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

Landscapes

  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that is reduced in size and improved in brightness. <P>SOLUTION: The semiconductor light-emitting device A1 is provided with: a substrate 1; a semiconductor light-emitting element 2 that is formed in the substrate 1 and in which an n-type semiconductor layer 21, an active layer 22, a p-type semiconductor layer 23 are stacked; electrodes 5A and 5B that are formed in the substrate 1 and are away from the semiconductor light-emitting element 2; and a connection member 4A to electrically connect the p-type semiconductor layer 23 with the electrode 5A. At least a part of the connection member 4A covering the semiconductor light-emitting element 2 is transparent. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、ＬＥＤなどの半導体発光素子を用いた半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device using a semiconductor light emitting element such as an LED.

図４は、従来の半導体発光装置の一例を示している。同図に示された半導体発光装置Ｘは、基板９１、半導体発光素子９２、接続部材９３Ａ，９３Ｂ、および電極９４Ａ，９４Ｂを備えており、たとえば電子機器の光源として用いられる。基板９１は、絶縁材料からなり、半導体発光素子９２を支持している。半導体発光素子９２は、たとえばＧａＮ系半導体材料またはＧａＡｓ系半導体材料からなるＬＥＤとして構成されており、ｎ型半導体層９２ａ、活性層９２ｂ、およびｐ型半導体層９２ｃを備えている。ｎ型半導体層９２ａを介して供給される電子とｐ型半導体層９２ｃを介して供給される正孔とが活性層９２ｂにおいて再結合することにより、活性層９２ｂの材質によって規定される波長の光が活性層９２ｂからｐ型半導体層９２ｃを透して発せられる。   FIG. 4 shows an example of a conventional semiconductor light emitting device. The semiconductor light emitting device X shown in the figure includes a substrate 91, a semiconductor light emitting element 92, connecting members 93A and 93B, and electrodes 94A and 94B, and is used as a light source for electronic equipment, for example. The substrate 91 is made of an insulating material and supports the semiconductor light emitting element 92. The semiconductor light emitting element 92 is configured as an LED made of, for example, a GaN-based semiconductor material or a GaAs-based semiconductor material, and includes an n-type semiconductor layer 92a, an active layer 92b, and a p-type semiconductor layer 92c. The electrons supplied through the n-type semiconductor layer 92a and the holes supplied through the p-type semiconductor layer 92c are recombined in the active layer 92b, whereby light having a wavelength defined by the material of the active layer 92b. Is emitted from the active layer 92b through the p-type semiconductor layer 92c.

電極９４Ａ，９４Ｂは、基板９１上において半導体発光素子９２から離間した位置に形成されており、たとえばＡｕからなる。接続部材９３Ａは、ｐ型半導体層９２ｃと電極９４Ａとを導通させるために設けられており、パッド９３Ａａおよびワイヤ９３Ａｂからなる。接続部材９３Ｂは、ｎ型半導体層９２ａと電極９４Ｂとを導通させるために設けられており、パッド９３Ｂａおよびワイヤ９３Ｂｂからなる。パッド９３Ａａ，９３Ｂａは、たとえばＴｉ／Ｐｔ／Ａｕが積層された構造とされている。   The electrodes 94A and 94B are formed on the substrate 91 at positions separated from the semiconductor light emitting element 92, and are made of, for example, Au. The connecting member 93A is provided for conducting the p-type semiconductor layer 92c and the electrode 94A, and includes a pad 93Aa and a wire 93Ab. The connection member 93B is provided for conducting the n-type semiconductor layer 92a and the electrode 94B, and includes a pad 93Ba and a wire 93Bb. The pads 93Aa and 93Ba have a structure in which, for example, Ti / Pt / Au is laminated.

半導体発光装置Ｘの問題点としては、以下が挙げられる。まず、ワイヤ９３Ａｂ，９３Ｂｂが、半導体発光素子９２よりも基板９１から離間する方向に嵩張ってしまう。このため、半導体発光装置Ｘの高さが高くなり、半導体発光装置Ｘの小型化が阻害されていた。また、ｐ型半導体層９２ｃを覆うパッド９３Ａａは、不透明な材質からなる。このため、活性層９２ｂからｐ型半導体層９２ｃを透過してきた光の一部は、パッド９３Ａａによって遮られてしまう。したがって、半導体発光装置Ｘの発光効率が不当に低下させられていた。   Problems with the semiconductor light emitting device X include the following. First, the wires 93Ab and 93Bb are bulky in a direction away from the substrate 91 rather than the semiconductor light emitting element 92. For this reason, the height of the semiconductor light emitting device X is increased, and the miniaturization of the semiconductor light emitting device X is hindered. The pad 93Aa covering the p-type semiconductor layer 92c is made of an opaque material. For this reason, part of the light transmitted from the active layer 92b through the p-type semiconductor layer 92c is blocked by the pad 93Aa. Therefore, the light emission efficiency of the semiconductor light emitting device X has been unduly lowered.

特開２００６−１２０８８２号公報JP 2006-120882 A

本発明は、上記した事情のもとで考え出されたものであって、小型化と高輝度化とを図ることが可能な半導体発光装置を提供することをその課題とする。   The present invention has been conceived under the circumstances described above, and it is an object of the present invention to provide a semiconductor light emitting device that can be reduced in size and brightness.

本発明によって提供される半導体発光装置は、基板と、上記基板に形成されており、上記基板寄りに位置する第１型半導体層、活性層、および上記活性層を挟んで上記基板と離間する側に位置する第２型半導体層が積層された半導体発光素子と、上記基板に形成されており、上記半導体発光素子と離間した素子外電極と、上記第２型半導体層と上記素子外電極とを導通させる接続部材と、を備える半導体発光装置であって、上記接続部材は、少なくとも上記半導体発光素子を覆う部分が透明であることを特徴としている。   A semiconductor light-emitting device provided by the present invention is formed on a substrate, the first type semiconductor layer located near the substrate, the active layer, and the side separated from the substrate with the active layer interposed therebetween. A semiconductor light-emitting element in which a second-type semiconductor layer located on the substrate is stacked; an element-external electrode formed on the substrate and spaced apart from the semiconductor light-emitting element; and the second-type semiconductor layer and the element-external electrode. A connection member that conducts, the connection member being characterized in that at least a portion covering the semiconductor light-emitting element is transparent.

このような構成によれば、上記半導体発光素子からの光が上記接続部材によって遮られることがない。したがって、上記半導体発光装置の発光効率を高めることが可能であり、上記半導体発光装置の高輝度化を図ることができる。   According to such a configuration, light from the semiconductor light emitting element is not blocked by the connecting member. Accordingly, the light emission efficiency of the semiconductor light emitting device can be increased, and the semiconductor light emitting device can have high luminance.

本発明の好ましい実施の形態においては、上記接続部材は、膜状とされている。このような構成によれば、上記接続部材は、上記半導体発光素子、上記基板、および上記電極に沿った形状となる。このため、上記接続部材が上記基板から離間する方向に大きく嵩張ることがない。したがって、上記半導体発光装置の小型化を図ることができる。   In a preferred embodiment of the present invention, the connecting member has a film shape. According to such a configuration, the connecting member has a shape along the semiconductor light emitting element, the substrate, and the electrode. For this reason, the connecting member does not become bulky in a direction away from the substrate. Therefore, the semiconductor light emitting device can be reduced in size.

本発明のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。   Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

以下、本発明の好ましい実施の形態につき、図面を参照して具体的に説明する。   Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

図１および図２は、本発明に係る半導体発光装置の第１実施形態を示している。同図に示された半導体発光装置Ａ１は、基板１、半導体発光素子２、絶縁膜３、接続部材４Ａ，４Ｂ、および電極５Ａ，５Ｂを備えている。半導体発光装置Ａ１は、半導体発光素子２からの光を出射させることにより、たとえば電子機器の光源として用いられる。なお、図２においては、理解の便宜上基板１を省略している。   1 and 2 show a first embodiment of a semiconductor light emitting device according to the present invention. The semiconductor light emitting device A1 shown in the figure includes a substrate 1, a semiconductor light emitting element 2, an insulating film 3, connecting members 4A and 4B, and electrodes 5A and 5B. The semiconductor light emitting device A1 is used as, for example, a light source of an electronic device by emitting light from the semiconductor light emitting element 2. In FIG. 2, the substrate 1 is omitted for convenience of understanding.

基板１は、半導体発光装置Ａ１の土台となる部分であり、本実施形態においては、たとえばサファイアなどの絶縁材料からなる。基板１には、半導体発光素子２、絶縁膜３、接続部材４Ａ，４Ｂ、および電極５Ａ，５Ｂが形成されている。   The board | substrate 1 is a part used as the base of semiconductor light-emitting device A1, and consists of insulating materials, such as sapphire, in this embodiment, for example. On the substrate 1, a semiconductor light emitting element 2, an insulating film 3, connecting members 4A and 4B, and electrodes 5A and 5B are formed.

半導体発光素子２は、たとえばＧａＮ系半導体材料またはＧａＡｓ系半導体材料に代表される半導体材料からなるＬＥＤであり、ｎ型半導体層（第１型半導体層）２１、活性層２２、およびｐ型半導体層（第２型半導体層）２３が積層された構造とされている。ｎ型半導体層２１は、基板１に形成されており、活性層２２に対して電子を供給する役割を果たす層である。本実施形態においては、ｎ型半導体層２１には、厚肉部分と薄肉部分が形成されている。この厚肉部分には、活性層２２およびｐ型半導体層２３が積層されている。活性層２２は、たとえば複数ずつの井戸層とバリア層とが交互に積層された多重量子井戸（ＭＱＷ）構造とされている。ｐ型半導体層２３は、活性層２２に対して正孔を供給する役割を果たす層である。   The semiconductor light emitting element 2 is an LED made of a semiconductor material typified by, for example, a GaN-based semiconductor material or a GaAs-based semiconductor material, and includes an n-type semiconductor layer (first-type semiconductor layer) 21, an active layer 22, and a p-type semiconductor layer. A (second type semiconductor layer) 23 is laminated. The n-type semiconductor layer 21 is a layer that is formed on the substrate 1 and serves to supply electrons to the active layer 22. In the present embodiment, the n-type semiconductor layer 21 has a thick portion and a thin portion. An active layer 22 and a p-type semiconductor layer 23 are stacked on this thick portion. The active layer 22 has, for example, a multiple quantum well (MQW) structure in which a plurality of well layers and barrier layers are alternately stacked. The p-type semiconductor layer 23 is a layer that plays a role of supplying holes to the active layer 22.

絶縁膜３は、たとえばＳｉＯ2などの絶縁材料からなり、半導体発光素子２の一部、および基板１のうち半導体発光素子２の周辺にある部分を覆っている。絶縁膜３には、開口３ａ，３ｂが形成されている。開口３ａは、ｐ型半導体層２３の上面を露出させている。開口３ｂは、ｎ型半導体層２１のうち上記薄肉部分の上面を露出させている。絶縁膜３の両端は、電極５Ａ，５Ｂに接している。 The insulating film 3 is made of an insulating material such as SiO 2 and covers a part of the semiconductor light emitting element 2 and a portion of the substrate 1 around the semiconductor light emitting element 2. Openings 3 a and 3 b are formed in the insulating film 3. The opening 3 a exposes the upper surface of the p-type semiconductor layer 23. The opening 3 b exposes the upper surface of the thin portion of the n-type semiconductor layer 21. Both ends of the insulating film 3 are in contact with the electrodes 5A and 5B.

電極（素子外電極）５Ａ，５Ｂは、半導体発光素子２に電力供給を行うためのものであり、たとえばＡｕの薄膜からなる。電極５Ａは、ｐ型半導体層２３と導通しており、正孔を供給するための正極とされている。電極５Ｂは、ｎ型半導体層２１と導通しており、電子を供給するための負極とされている。   Electrodes (element outer electrodes) 5A and 5B are for supplying power to the semiconductor light emitting element 2, and are made of, for example, a thin film of Au. The electrode 5A is electrically connected to the p-type semiconductor layer 23 and serves as a positive electrode for supplying holes. The electrode 5B is electrically connected to the n-type semiconductor layer 21 and is a negative electrode for supplying electrons.

接続部材４Ａ，４Ｂは、半導体発光素子２と電極５Ａ，５Ｂとを導通させるために設けられており、いずれもがたとえばＩＴＯまたは導電性ポリマなどの透明な導電材料によって形成された膜状とされている。接続部材４Ａは、電極５Ａとｐ型半導体層２３とを導通させており、電極５Ａからｐ型半導体層２３にわたる領域を覆っている。接続部材４Ｂは、電極５Ｂとｎ型半導体層２１とを導通させており、電極５Ｂからｎ型半導体層２１の上記薄肉部分にわたる領域を覆っている。   The connection members 4A and 4B are provided for conducting the semiconductor light emitting element 2 and the electrodes 5A and 5B, and both are formed into a film formed of a transparent conductive material such as ITO or a conductive polymer. ing. The connecting member 4A makes the electrode 5A and the p-type semiconductor layer 23 conductive, and covers a region extending from the electrode 5A to the p-type semiconductor layer 23. The connection member 4 </ b> B connects the electrode 5 </ b> B and the n-type semiconductor layer 21, and covers the region extending from the electrode 5 </ b> B to the thin portion of the n-type semiconductor layer 21.

次に、半導体発光装置Ａ１の作用について説明する。   Next, the operation of the semiconductor light emitting device A1 will be described.

本実施形態によれば、接続部材４Ａ，４Ｂは、いずれも半導体発光素子２および基板１に沿った膜状とされている。このため、接続部材４Ａ，４Ｂは、基板１から離間する方向に大きく嵩張ることがない。したがって、半導体発光装置Ａ１の高さを低くすることが可能であり、半導体発光装置Ａ１の小型化を図ることができる。   According to the present embodiment, the connection members 4 </ b> A and 4 </ b> B are both film-shaped along the semiconductor light emitting element 2 and the substrate 1. For this reason, the connection members 4 </ b> A and 4 </ b> B are not bulky in a direction away from the substrate 1. Therefore, the height of the semiconductor light emitting device A1 can be reduced, and the semiconductor light emitting device A1 can be downsized.

また、活性層２２からの光が出射されるｐ型半導体層２３の上面は、透明とされた接続部材４Ａによって覆われている。このため、ｐ型半導体層２３を透過してきた光は、接続部材４Ａによって遮られることなく半導体発光装置Ａ１外へと出射される。したがって、半導体発光装置Ａ１の発光効率を高めることが可能であり、半導体発光装置Ａ１の高輝度化を図ることができる。   Further, the upper surface of the p-type semiconductor layer 23 from which light from the active layer 22 is emitted is covered with a transparent connection member 4A. For this reason, the light transmitted through the p-type semiconductor layer 23 is emitted outside the semiconductor light emitting device A1 without being blocked by the connecting member 4A. Therefore, the light emission efficiency of the semiconductor light emitting device A1 can be increased, and the brightness of the semiconductor light emitting device A1 can be increased.

図３は、本発明に係る半導体発光装置の第２実施形態を示している。なお、この図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。本実施形態の半導体発光装置Ａ２は、下面電極５１上に半導体発光素子２が設けられている点が上述した実施形態と異なっている。   FIG. 3 shows a second embodiment of the semiconductor light emitting device according to the present invention. In this figure, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment. The semiconductor light emitting device A2 of this embodiment is different from the above-described embodiment in that the semiconductor light emitting element 2 is provided on the lower electrode 51.

本実施形態においては、基板１にコーン状の凹部１ａが形成されている。この凹部１ａの底部には、下面電極５１が形成されている。下面電極５１は、金属製の薄膜からなり、基板１の表面に沿って半導体発光素子２から離間する方向に延びている。半導体発光素子２は、ｎ型半導体層２１が下面電極５１に接するように配置されている。絶縁膜３は、凹部１ａの内向き側面と半導体発光素子２との間を埋めている。基板１には、正極としての電極５が形成されている。ｐ型半導体層２３と電極５とは、接続部材４によって接続されている。接続部材４は、上述した実施形態と同様にＩＴＯまたは導電性ポリマなどの透明な導電材料によって膜状に形成されている。   In the present embodiment, a cone-shaped recess 1 a is formed in the substrate 1. A bottom electrode 51 is formed on the bottom of the recess 1a. The lower surface electrode 51 is made of a metal thin film and extends in a direction away from the semiconductor light emitting element 2 along the surface of the substrate 1. The semiconductor light emitting element 2 is arranged so that the n-type semiconductor layer 21 is in contact with the lower surface electrode 51. The insulating film 3 fills the space between the inward side surface of the recess 1 a and the semiconductor light emitting element 2. An electrode 5 as a positive electrode is formed on the substrate 1. The p-type semiconductor layer 23 and the electrode 5 are connected by the connection member 4. The connection member 4 is formed in a film shape by a transparent conductive material such as ITO or a conductive polymer as in the above-described embodiment.

このような実施形態によっても、半導体発光装置Ａ２の小型化と高輝度化とを図ることができる。特に、基板１の凹部１ａに半導体発光素子２を設けることにより、半導体発光装置Ａ２の高さをさらに低くすることができる。   Also in such an embodiment, the semiconductor light emitting device A2 can be reduced in size and brightness. In particular, by providing the semiconductor light emitting element 2 in the recess 1a of the substrate 1, the height of the semiconductor light emitting device A2 can be further reduced.

本発明に係る半導体発光装置は、上述した実施形態に限定されるものではない。本発明に係る半導体発光装置の各部の具体的な構成は、種々に設計変更自在である。   The semiconductor light emitting device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be varied in design in various ways.

本発明でいう第１型半導体層および第２型半導体層は、いずれがｎ型半導体層およびｐ型半導体層であってもよい。本発明における接続部材は、上記実施形態のように全体が透明であるものに限定されず、半導体発光素子を覆う部分が透明であれば、それ以外の部分が不透明とされていてもよい。   Any of the first-type semiconductor layer and the second-type semiconductor layer in the present invention may be an n-type semiconductor layer and a p-type semiconductor layer. The connection member in the present invention is not limited to the whole being transparent as in the above embodiment, and other portions may be opaque as long as the portion covering the semiconductor light emitting element is transparent.

本発明に係る半導体発光装置の第１実施形態を示す断面図である。It is sectional drawing which shows 1st Embodiment of the semiconductor light-emitting device concerning this invention. 本発明に係る半導体発光装置の第１実施形態を示す要部平面図である。It is a principal part top view which shows 1st Embodiment of the semiconductor light-emitting device based on this invention. 本発明に係る半導体発光装置の第２実施形態を示す断面図である。It is sectional drawing which shows 2nd Embodiment of the semiconductor light-emitting device concerning this invention. 従来の半導体発光装置の一例を示す断面図である。It is sectional drawing which shows an example of the conventional semiconductor light-emitting device.

符号の説明Explanation of symbols

Ａ１，Ａ２ 半導体発光装置
１ 基板
２ 半導体発光素子
３ 絶縁膜
４，４Ａ，４Ｂ 接続部材
５，５Ａ，５Ｂ 電極（素子外電極）
２１ ｎ型半導体層（第１型半導体層）
２２ 活性層
２３ ｐ型半導体層（第２型半導体層） A1, A2 Semiconductor light emitting device 1 Substrate 2 Semiconductor light emitting element 3 Insulating film 4, 4A, 4B Connecting member 5, 5A, 5B Electrode (element outer electrode)
21 n-type semiconductor layer (first-type semiconductor layer)
22 active layer 23 p-type semiconductor layer (second-type semiconductor layer)

Claims (2)

基板と、
上記基板に形成されており、上記基板寄りに位置する第１型半導体層、活性層、および上記活性層を挟んで上記基板と離間する側に位置する第２型半導体層が積層された半導体発光素子と、
上記基板に形成されており、上記半導体発光素子と離間した素子外電極と、
上記第２型半導体層と上記素子外電極とを導通させる接続部材と、
を備える半導体発光装置であって、
上記接続部材は、少なくとも上記半導体発光素子を覆う部分が透明であることを特徴とする、半導体発光装置。 A substrate,
Semiconductor light emitting device comprising a first type semiconductor layer formed on the substrate, an active layer located closer to the substrate, and a second type semiconductor layer located on a side away from the substrate across the active layer Elements,
An outer electrode formed on the substrate and spaced apart from the semiconductor light emitting element;
A connection member for conducting the second type semiconductor layer and the outer electrode;
A semiconductor light emitting device comprising:
The semiconductor light emitting device according to claim 1, wherein at least a portion covering the semiconductor light emitting element is transparent. 上記接続部材は、膜状である、請求項１に記載の半導体発光装置。   The semiconductor light-emitting device according to claim 1, wherein the connection member has a film shape.
JP2007017562A 2007-01-29 2007-01-29 Semiconductor light-emitting device Pending JP2008186892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007017562A JP2008186892A (en) 2007-01-29 2007-01-29 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007017562A JP2008186892A (en) 2007-01-29 2007-01-29 Semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
JP2008186892A true JP2008186892A (en) 2008-08-14

Family

ID=39729743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007017562A Pending JP2008186892A (en) 2007-01-29 2007-01-29 Semiconductor light-emitting device

Country Status (1)

Country Link
JP (1) JP2008186892A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03192779A (en) * 1989-12-21 1991-08-22 Kyocera Corp Light emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03192779A (en) * 1989-12-21 1991-08-22 Kyocera Corp Light emitting diode

Similar Documents

Publication Publication Date Title
JP5490997B2 (en) AC drive type light emitting diode
US9893118B2 (en) Light emitting device and method for fabricating the same
JP5777879B2 (en) Light emitting device, light emitting device unit, and light emitting device package
JP5512493B2 (en) White light emitting device
KR100838197B1 (en) Light emitting diode with improved current spreading performance
KR102122358B1 (en) Semiconductor light emitting device
JP4804485B2 (en) Nitride semiconductor light emitting device and manufacturing method
TWI301679B (en) Semiconductor light emitting device and method of fabricating the same
JP5141086B2 (en) Semiconductor light emitting device
CN108807358B (en) Semiconductor light emitting device
JP6009041B2 (en) Light emitting device, light emitting device unit, and light emitting device package
CN113410358A (en) Semiconductor light emitting element
CN111201620A (en) Light emitting device and method for manufacturing the same
KR20120067782A (en) Light emitting device
JPH08102552A (en) Semiconductor light emitting device and its manufacture
JP2013140978A (en) Semiconductor light-emitting element and led module
KR20100108907A (en) Light emitting device having plurality of light emitting cells
JP2013069802A (en) Semiconductor light-emitting device
JP2008186892A (en) Semiconductor light-emitting device
KR101928306B1 (en) Semiconductor light emitting device
KR20160093789A (en) Semiconductor light emitting diode
JP2005123589A (en) Light emitting device having transparent conductive layer
CN111739878B (en) Electronic device
KR102557328B1 (en) Semiconductor light emitting device
JP2016096322A (en) Light emission device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110928

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120327