JP2008177564A - ディープサブミクロントランジスタ技術用のhigh−k/金属ゲートスタックをパッシベートするためのFベースのゲートエッチングの使用 - Google Patents
ディープサブミクロントランジスタ技術用のhigh−k/金属ゲートスタックをパッシベートするためのFベースのゲートエッチングの使用 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 57
- 239000002184 metal Substances 0.000 title claims abstract description 57
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 101
- 239000011737 fluorine Substances 0.000 claims abstract description 101
- 238000000034 method Methods 0.000 claims abstract description 97
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 97
- 238000000059 patterning Methods 0.000 claims description 40
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 20
- 238000001312 dry etching Methods 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910016006 MoSi Inorganic materials 0.000 claims description 4
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 4
- 238000004151 rapid thermal annealing Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims description 2
- 150000001722 carbon compounds Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 230000006872 improvement Effects 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000002513 implantation Methods 0.000 abstract description 4
- 238000011282 treatment Methods 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 3
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 13
- 229910008284 Si—F Inorganic materials 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000010348 incorporation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- DYCJFJRCWPVDHY-LSCFUAHRSA-N NBMPR Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C2=NC=NC(SCC=3C=CC(=CC=3)[N+]([O-])=O)=C2N=C1 DYCJFJRCWPVDHY-LSCFUAHRSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010405 reoxidation reaction Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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Abstract
【解決手段】新規な方法は、フッ素を導入するためにSF6ベースの金属エッチング化学反応を用い、これにより標準プロセスフローの熱量の後に、界面の優秀なHパッシベーションが得られる。この方法の優位点は、この方法がFを導入するための金属ゲートエッチングを用いて、追加の注入や処理が不要であることである。新たな方法を用いた大幅なBTIの改良に加えて、MuGFET装置において、より良いVthの制御性と増加した駆動電流を得ることができる。
【選択図】図1
Description
IEDM Technical Digest, p. 647-650, 2005 IEEE Tans. Electron Dev., pp. 388-394, 1997
少なくともチャネル層(または基板、例えばSi、SOI)、high−k誘電体層、および金属ゲート層を含む(または、からなる)ゲートスタック層を提供する工程と、
炭素を含まないフッ素含有プラズマに、ゲートスタック層を晒す工程と、
晒されたゲートスタック層を、700℃より高い温度で熱処理する工程とを含む。
MuGFET装置は、標準的な[100]/[110](上表面)のSOI基板上に作製される。フィン高さHfin=60nmであり、フィン幅は20nmまで小さくなる。
金属ゲートエッチングプロセスが、図2に模式的に示されている。これは等方性エッチングであり、それゆえに装置の全ての側面に対して同じ影響を与える。
中断ストレス(0.5秒の遅延)BTI測定は、絶対値が1〜2.2Vの範囲のストレスVGと、125℃から175℃の温度範囲で行われた。
SEG熱量の役割を調査するために、上述の実施例に記載されたものと同じエッチング化学反応(BCl3/Cl2化学反応(フッ素無し)と、SF6/O2化学反応を含む好適な具体例にかかる化学反応とを用いた参考)を有するが、SEGが行われないnMOS装置が作製された。この場合、ハードマスク(HM)は事前に熱量を与えることなく除去した。
Claims (24)
- high−k誘電体層のフッ素パッシベーション方法であって、
少なくともチャネル層、high−k誘電体層、および金属ゲート層を含むゲートスタック層を提供する工程と、
炭素化合物を含まないフッ素含有プラズマに、ゲートスタック層を晒す工程と、
晒されたゲートスタック層を、700℃より高い温度で熱処理する工程と、を含む方法。 - フッ素含有プラズマにゲートスタック層を晒す工程は、ゲートスタック層のパターニング中に行われる請求項1に記載の方法。
- フッ素含有プラズマにゲートスタック層を晒す工程は、ゲースタック層のドライエッチングと同時またはその後に行われる請求項1または2に記載の方法。
- フッ素含有プラズマにゲートスタック層を晒す工程は、フッ素含有プラズマを用いた金属ゲートのドライエッチング工程からなる請求項1または2に記載の方法。
- フッ素含有プラズマは、SF6含有プラズマである請求項1〜4のいずれかに記載の方法。
- フッ素含有プラズマは、更にO2を含む請求項1〜5のいずれかに記載の方法。
- フッ素含有プラズマは、SF6とO2の混合物を含む請求項5または6に記載の方法。
- フッ素含有プラズマにゲートスタック層を晒す工程に先立って、BCl3含有プラズマにより金属ゲート層が部分的にエッチングされる請求項1〜7のいずれかに記載の方法。
- 部分的にエッチングされた金属ゲート層は、更にフッ素含有プラズマによって完全にエッチングされる請求項8に記載の方法。
- BCl3含有プラズマは、更にCl2を含む請求項8または9に記載の方法。
- ゲートスタック層は、更に金属ゲート層の上に多結晶Siのようなキャップ層を含む請求項1〜10のいずれかに記載の方法。
- 金属ゲート層は、TiN、TaN、TiN/TaN、TaC、WN2、TiW、WSi2、MoSi2、Mo、Ti、またはWを含む層である請求項1〜11のいずれかに記載の方法。
- 金属ゲート層は、デュアルメタルゲートである請求項1〜12のいずれかに記載の方法。
- 誘電体層は、Hfを含む層である請求項1〜13のいずれかに記載の方法。
- Hfを含む層は、HfO2を含む層である請求項14に記載の方法。
- Hfを含む層は、ハフニウムシリコン酸化物を含む層である請求項14に記載の方法。
- チャネル層は、少なくともSiを含む請求項1〜16のいずれかに記載の方法。
- チャネル層は、少なくともGeを含む請求項1〜17のいずれかに記載の方法。
- チャネル層は、少なくともIII/V族元素を含む請求項1〜18のいずれかに記載の方法。
- 熱処理は、少なくとも2分間行われる請求項1〜19のいずれかに記載の方法。
- 熱処理工程は、選択エピタキシャル成長プロセス中、または急速熱アニール(RTA)工程中に行われる請求項1〜20のいずれかに記載の方法。
- 半導体装置の製造のための請求項1〜21のいずれかに記載の方法。
- 半導体装置は、マルチゲート装置であり、そのチャネル層はフィンである請求項22に記載の方法。
- 請求項1〜21のいずれかに記載の方法で得られた半導体装置。
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