JP2008172243A - 原子層蒸着法を利用したp型ZnO半導体膜の製造方法及びその製造方法で製造されたZnO半導体膜を含む薄膜トランジスタ - Google Patents
原子層蒸着法を利用したp型ZnO半導体膜の製造方法及びその製造方法で製造されたZnO半導体膜を含む薄膜トランジスタ Download PDFInfo
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- 239000010408 film Substances 0.000 title claims abstract description 123
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000000151 deposition Methods 0.000 title abstract description 8
- 239000002243 precursor Substances 0.000 claims abstract description 131
- 239000011701 zinc Substances 0.000 claims abstract description 91
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 81
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 68
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000001301 oxygen Substances 0.000 claims abstract description 52
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 46
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000011888 foil Substances 0.000 claims abstract description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 29
- 239000011261 inert gas Substances 0.000 claims description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 5
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017109 AlON Inorganic materials 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910003070 TaOx Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 229910052786 argon Inorganic materials 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 6
- 229910052754 neon Inorganic materials 0.000 description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 6
- 229910052704 radon Inorganic materials 0.000 description 6
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- -1 utilizing HfOx Inorganic materials 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
【解決手段】本発明のp型ZnO半導体膜の製造方法は、基板を準備し、チャンバー内に配置する段階と、チャンバー内に亜鉛前駆体と酸素前駆体を注入し、原子層蒸着法を利用した亜鉛前駆体と酸素前駆体間の表面化学反応を通じて基板上にZnO薄膜を形成する段階と、チャンバー内に亜鉛前駆体と窒素前駆体を注入し、亜鉛前駆体と窒素前駆体間の表面化学反応を用いてZnO薄膜上にドーピング層を形成する段階とを含む。半導体膜の製造方法を通じて形成された半導体膜を利用して、ガラス、Si、SUSなどの金属箔、プラスチック基板上に特性が優秀なp型の薄膜トランジスタを形成することができ、PN接合(junction)を利用したLEDなどの光電素子を具現することができる。
【選択図】図1
Description
図1は、本発明の一実施例に係るp型ZnO半導体膜の製造方法を説明ための工程図で、図2は、図1の製造方法によって製造されたp型ZnO半導体膜の側断面図である。
2 Zn3N2層
41 基板
42 ゲート電極
43 ゲート絶縁膜
44 ソース及びドレイン電極
45 半導体膜
Claims (16)
- 基板を準備し、チャンバー内に配置する段階と、
前記チャンバー内に亜鉛前駆体と酸素前駆体を注入し、原子層蒸着法を用いて前記亜鉛前駆体と前記酸素前駆体間の表面化学反応を通じて前記基板上にZnO薄膜を形成する段階と、
前記チャンバー内に亜鉛前駆体と窒素前駆体を注入し、前記亜鉛前駆体と前記窒素前駆体間の表面化学反応を用いて前記ZnO薄膜上にドーピング層を形成する段階と
を含むことを特徴とするp型ZnO半導体膜の製造方法。 - 前記ZnO薄膜を形成する段階は、
a1)前記チャンバー内に亜鉛前駆体を注入し、前記基板上に吸着させる段階と、
a2)前記チャンバー内に不活性気体を注入し、前記基板に吸着されない剰余の亜鉛前駆体を除去する段階と、
a3)前記基板に吸着された前記亜鉛前駆体と反応してZnO薄膜が形成されるように前記チャンバー内に酸素前駆体を注入する段階と、
a4)前記チャンバー内に不活性気体を注入し、前記亜鉛前駆体と反応しない前記酸素前駆体を除去する段階と、
a5)前記a1)乃至a4)段階を複数回反復する段階と
を含むことを特徴とする請求項1に記載のp型ZnO半導体膜の製造方法。 - 前記a5)段階を3〜20回反復することを特徴とする請求項2に記載のp型ZnO半導体膜の製造方法。
- 前記ZnO薄膜上にドーピング層を形成する段階は、
b1)前記ZnO薄膜が形成された前記基板上に亜鉛前駆体を注入し、前記ZnO薄膜上に吸着させる段階と、
b2)前記チャンバー内に不活性気体を注入し、前記基板に吸着されない剰余の亜鉛前駆体を除去する段階と、
b3)前記チャンバー内に窒素前駆体を注入し、前記ZnO薄膜上に吸着された亜鉛前駆体と一緒にZn3N2ドーピング層を形成する段階と、
b4)前記チャンバー内に不活性気体を注入し、前記亜鉛前駆体と反応しない残余の窒素前駆体を除去する段階と、
b5)前記b1)乃至b4)段階を1乃至10回反復する段階と
を含むことを特徴とする請求項2に記載のp型ZnO半導体膜の製造方法。 - 前記ZnO薄膜と前記Zn3N2ドーピング層の厚さが10〜100nmになるまで前記a1)〜a5)段階及び前記b1)〜b5)段階を反復して行うことを特徴とする請求項4に記載のp型ZnO半導体膜の製造方法。
- c1)基板を準備し、チャンバー内に配置する段階と、
c2)前記チャンバー内に亜鉛前駆体を注入し、前記基板上に吸着させる段階と、
c3)前記チャンバー内に不活性気体を注入し、前記基板に吸着されない剰余の亜鉛前駆体を除去する段階と、
c4)前記チャンバー内に酸素前駆体と窒素前駆体を同時に注入し、前記基板上に吸着された亜鉛前駆体との表面化学反応を用いて窒素がドーピングされたZnO:N膜を形成する段階と
を含むことを特徴とするp型ZnO半導体膜の製造方法。 - 前記窒素がドーピングされたZnO薄膜の厚さが10〜100nmになるように前記c2)〜c4)段階を複数回反復することを特徴とする請求項6に記載のp型ZnO半導体膜の製造方法。
- 前記亜鉛前駆体は、ジエチルジンク又はジメチルジンクであることを特徴とする請求項1又は6に記載のp型ZnO半導体膜の製造方法。
- 前記酸素前駆体は、水、オゾン、酸素、水プラズマ又は酸素プラズマのうち1つであることを特徴とする請求項1又は6に記載のp型ZnO半導体膜の製造方法。
- 前記窒素前駆体は、アンモニア、窒素、窒素プラズマ、アンモニアプラズマ、二窒化酸素、又は二酸化窒素プラズマのうち1つであることを特徴とする請求項1又は6に記載のp型ZnO半導体膜の製造方法。
- 前記原子層蒸着法は、トレブリングウェーブリアクター型、リモートプラズマ原子層蒸着法及びダイレクトプラズマ原子層蒸着法のうち1つであることを特徴とする請求項1又は6に記載のp型ZnO半導体膜の製造方法。
- 前記基板は、ガラス、金属箔、Si又はプラスチックのうち1つであることを特徴とする請求項1又は6に記載のp型ZnO半導体膜の製造方法。
- 基板上に形成されるゲート電極と、
請求項1乃至7のいずれかに記載の方法を用いて製造され、前記ゲート電極の上部又は下部に形成されるp型ZnO半導体膜と、
前記p型ZnO半導体膜と電気的に接触するソース/ドレイン電極と、
前記ゲート電極と前記p型ZnO半導体膜との間に形成されるゲート絶縁膜と
を含むことを特徴とする薄膜トランジスタ。 - 前記ゲート電極、前記ソース電極及びドレイン電極は、ITO、IZO、ZnO:AL、ZnO:Ga、NiO、Ag、Au、Al、Al/Nd、Cr、Al/Cr/Al、Ni、及びMoのうち少なくとも1つを用いて単一層又は多重層で形成されることを特徴とする請求項13に記載の薄膜トランジスタ。
- 前記ゲート絶縁膜は、単一層又は多重層構造の無機絶縁膜層、単一層又は多重層構造の有機絶縁膜層、又は有機/無機ハイブリッド層のうち1つで形成されることを特徴とする請求項13に記載の薄膜トランジスタ。
- 前記無機絶縁膜層は、SiNx、AlON、TiO2、AlOx、TaOx、HfOx、SiON、及びSiOxのうち1つを利用することを特徴とする請求項15に記載の薄膜トランジスタ。
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