JP2008166661A - Semiconductor light-emitting apparatus - Google Patents
Semiconductor light-emitting apparatus Download PDFInfo
- Publication number
- JP2008166661A JP2008166661A JP2007000540A JP2007000540A JP2008166661A JP 2008166661 A JP2008166661 A JP 2008166661A JP 2007000540 A JP2007000540 A JP 2007000540A JP 2007000540 A JP2007000540 A JP 2007000540A JP 2008166661 A JP2008166661 A JP 2008166661A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- support
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
本発明は、発光ダイオード等の半導体発光装置、特に化合物半導体層の発光層が発する光を基板が吸収するのを抑制できる半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device such as a light emitting diode, and more particularly to a semiconductor light emitting device capable of suppressing a substrate from absorbing light emitted from a light emitting layer of a compound semiconductor layer.
支持体と、支持体の支持面に固着される半導体発光素子と、半導体発光素子を包囲して支持体の支持面の外周部に設けられる環状の側壁と、半導体発光素子の上面及び側面を被覆する保護体とを備える半導体発光装置は、例えば、下記特許文献１により公知である。特許文献１では、半導体発光素子は、サファイア基板等の光透過性を有する絶縁性基板と、絶縁性基板の上面に形成された発光層（活性層）を含む窒化ガリウム系化合物等の化合物半導体層とを有する。これに対し、窒化ガリウム系化合物半導体の成長基板としてシリコン基板を有する半導体発光素子は、下記特許文献２により公知である。特許文献２の半導体発光素子は、成長基板としてサファイア基板を使用する特許文献１と比較して、材料コストが安価で且つ半導体発光素子の製造が容易となる利点を有する。
A support, a semiconductor light emitting device fixed to the support surface of the support, an annular side wall that surrounds the semiconductor light emitting device and is provided on an outer periphery of the support surface, and covers an upper surface and side surfaces of the semiconductor light emitting device A semiconductor light emitting device including a protective body is known from, for example,
近年、半導体発光素子を使用した擬似白色発光ダイオードが実現されている。このような発光ダイオードでは、上述した半導体発光素子を被覆する保護体中に蛍光体を配合し、半導体発光素子からの光と蛍光体により波長変換された光とを混合することによって、白色系の発光を得ることができる。 In recent years, pseudo white light emitting diodes using semiconductor light emitting elements have been realized. In such a light emitting diode, a phosphor is blended in the protective body that covers the semiconductor light emitting element described above, and the light from the semiconductor light emitting element and the light that has been wavelength-converted by the phosphor are mixed to produce a white-based diode. Luminescence can be obtained.
しかしながら、シリコン基板は、サファイア基板と比較して、不透明で且つ高い光吸収性を有し、窒化ガリウム系化合物半導体の発光層が発する光を透過させずに吸収する問題があった。特許文献２の半導体発光素子では、発光層の下方に反射膜層を備え、反射膜層により、発光層からシリコン基板に直接向かう光を反射して、半導体発光素子の上方に向かう光量を増大することができる。しかしながら、発光層から半導体発光素子の側面を通じて放出された光は、側壁に反射して、その一部がシリコン基板に吸収される。よって、半導体発光装置の輝度を十分に高めることができなかった。
However, the silicon substrate is opaque and has higher light absorption than the sapphire substrate, and has a problem of absorbing light emitted from the light emitting layer of the gallium nitride compound semiconductor without transmitting it. In the semiconductor light emitting device of
そこで、本発明は、基板に向かう発光層の光の一部が光吸収性を有する基板に吸収され、半導体発光装置の輝度が低下するのを抑制できる半導体発光装置を提供することを目的とする。 In view of the above, an object of the present invention is to provide a semiconductor light-emitting device that can suppress a reduction in luminance of the semiconductor light-emitting device because a part of the light of the light-emitting layer toward the substrate is absorbed by the light-absorbing substrate. .
本発明の半導体発光装置は、支持体(1)と、支持体(1)の支持面(1a)に固着される半導体発光素子(2)と、半導体発光素子(2)を包囲して支持体(1)の支持面(1a)の外周部に設けられる環状の側壁(3)と、側壁(3)内に配置されて半導体発光素子(2)の側面(2b)を被覆し且つ光反射性物質を包含する被覆体(4)とを備える。半導体発光素子(2)は、基板(21)と、基板(21)の上面(21a)に形成された発光層(23)を含む化合物半導体層(22)とを有し、基板(21)は、化合物半導体層(22)の発光層(23)が発する光に対して吸収性を有する。被覆体(4)は、化合物半導体層(22)の発光層(23)と支持体(1)の支持面(1a)との間で基板(21)の側面(21b)の全体を環状に被覆する。本発明では、支持面(1a)と発光層(23)との間で基板(21)の側面(21b)を被覆体(4)により被覆するので、化合物半導体層(22)の発光層(23)が発する光のうち、側壁(3)に反射して光吸収性を有する基板(21)に向かう光が基板(21)に吸収されずに、被覆体(4)内に包含される光反射性物質により発光層(23)から放出される光の一部を基板(21)以外の方向に反射することができる。これにより、基板(21)による光の吸収量を減少して、半導体発光素子(2)の上方に向かう光量を増大し、半導体発光装置の輝度を向上することができる。 The semiconductor light emitting device of the present invention surrounds the support (1), the semiconductor light emitting element (2) fixed to the support surface (1a) of the support (1), and the semiconductor light emitting element (2). An annular side wall (3) provided on the outer peripheral portion of the support surface (1a) of (1), and a side surface (2b) of the semiconductor light emitting element (2) disposed within the side wall (3) and reflecting light A covering (4) containing the substance. The semiconductor light emitting device (2) includes a substrate (21) and a compound semiconductor layer (22) including a light emitting layer (23) formed on the upper surface (21a) of the substrate (21). In addition, the compound semiconductor layer (22) has absorptivity to light emitted from the light emitting layer (23). The covering (4) covers the entire side surface (21b) of the substrate (21) in an annular shape between the light emitting layer (23) of the compound semiconductor layer (22) and the supporting surface (1a) of the supporting body (1). To do. In the present invention, since the side surface (21b) of the substrate (21) is covered with the covering (4) between the support surface (1a) and the light emitting layer (23), the light emitting layer (23 of the compound semiconductor layer (22) is provided. The light reflected from the side wall (3) and traveling toward the light-absorbing substrate (21) is not absorbed by the substrate (21) and is reflected in the covering (4). Part of the light emitted from the light emitting layer (23) by the active substance can be reflected in a direction other than the substrate (21). Thereby, the amount of light absorbed by the substrate (21) can be reduced, the amount of light directed upward of the semiconductor light emitting element (2) can be increased, and the luminance of the semiconductor light emitting device can be improved.
前記の通り、本発明では、半導体発光素子の基板による光の吸収を減少させて、高輝度の半導体発光装置を提供することがきる。 As described above, in the present invention, it is possible to provide a semiconductor light emitting device with high brightness by reducing light absorption by the substrate of the semiconductor light emitting element.
次に、窒化ガリウム系化合物半導体から成る発光ダイオード（ＬＥＤ）に適用した本発明による半導体発光装置の実施の形態を図１〜図６について説明する。 Next, an embodiment of a semiconductor light emitting device according to the present invention applied to a light emitting diode (LED) made of a gallium nitride compound semiconductor will be described with reference to FIGS.
図１及び図２に示すように、本実施の形態の発光ダイオード(10)は、支持体(1)と、支持体(1)の支持面(1a)に固着される発光ダイオードチップ(2)と、発光ダイオードチップ(2)を包囲して支持体(1)の支持面(1a)の外周部に設けられる環状の側壁(3)と、側壁(3)内に配置されて発光ダイオードチップ(2)の側面(2b)を被覆する被覆体(4)とを備える。支持体(1)の上端部に形成された凹部により支持体(1)と側壁(3)とが一体に形成され、凹部内の底面に支持面(1a)が形成される。側壁(3)は、発光ダイオードチップ(2)の光を集光して指向性及び正面輝度を向上するリフレクタの役割を有し、支持面(1a)から上方に向かって垂直に又は拡径して形成される。支持体(1)の下端部には、第１の外部リード(6)が支持体(1)から延伸して形成され、第１の外部リード(6)に隣接して第２の外部リード(7)が配置される。支持体(1)、側壁(3)、第１の外部リード(6)及び第２の外部リード(7)は、例えば、銅、鉄若しくはアルミニウム又はこれらの合金等の金属により形成される。 As shown in FIG.1 and FIG.2, the light emitting diode (10) of this Embodiment is a light emitting diode chip (2) fixed to the support body (1) and the support surface (1a) of a support body (1). An annular side wall (3) provided on the outer periphery of the support surface (1a) of the support (1) surrounding the light emitting diode chip (2), and a light emitting diode chip ( And a covering (4) covering the side surface (2b) of 2). The support (1) and the side wall (3) are integrally formed by the recess formed in the upper end of the support (1), and the support surface (1a) is formed on the bottom surface in the recess. The side wall (3) serves as a reflector that collects light from the light-emitting diode chip (2) to improve directivity and front luminance, and expands vertically or vertically from the support surface (1a). Formed. A first external lead (6) is formed at the lower end of the support (1) by extending from the support (1), and is adjacent to the first external lead (6). 7) is arranged. The support (1), the side wall (3), the first external lead (6), and the second external lead (7) are made of metal such as copper, iron, aluminum, or an alloy thereof.
発光ダイオードチップ(2)は、シリコン基板(21)と、シリコン基板(21)の上面(21a)に形成された発光層(23)を含む化合物半導体層(22)とを有する。本実施の形態では、化合物半導体層(22)は、約３６５nm〜５５０nmの波長で発光するGaN（窒化ガリウム）系化合物半導体から成り、例えば、発光ダイオードチップ(2)として、発光波長のピークが約４４０nm〜４７０nmのGaN系青色発光ダイオードチップを使用する。化合物半導体層(22)は、例えば、ｎ型又はｐ型のシリコン基板(21)の上面(21a)にGaNによりｎ型半導体領域が形成され、ｎ型半導体領域上にInGaNにより発光層（活性層）(23)が形成され、発光層(23)上にGaNによりｐ型半導体領域が形成される。ｐ型半導体領域上には、アルミニウム等の金属膜から成るアノード電極（上面電極）(11)が形成され、シリコン基板(21)の下面には、アルミニウム等の金属膜から成るカソード電極（下面電極）(12)が形成される。発光ダイオードチップ(2)のアノード電極(11)は、第２の外部リード(7)の上端部とリード細線(8)により電気的に接続され、カソード電極(12)は、半田等の導電性接着剤(9)により支持体(1)の支持面(1a)に固着され、電気的に接続される。 The light emitting diode chip (2) has a silicon substrate (21) and a compound semiconductor layer (22) including a light emitting layer (23) formed on the upper surface (21a) of the silicon substrate (21). In the present embodiment, the compound semiconductor layer (22) is made of a GaN (gallium nitride) compound semiconductor that emits light at a wavelength of about 365 nm to 550 nm. For example, as the light emitting diode chip (2), the peak of the emission wavelength is about. A GaN-based blue light emitting diode chip having a wavelength of 440 nm to 470 nm is used. The compound semiconductor layer (22) includes, for example, an n-type semiconductor region formed of GaN on the upper surface (21a) of an n-type or p-type silicon substrate (21), and a light emitting layer (active layer) formed of InGaN on the n-type semiconductor region. ) (23) is formed, and a p-type semiconductor region is formed of GaN on the light emitting layer (23). An anode electrode (upper surface electrode) (11) made of a metal film such as aluminum is formed on the p-type semiconductor region, and a cathode electrode (lower surface electrode) made of a metal film such as aluminum is formed on the lower surface of the silicon substrate (21). ) (12) is formed. The anode electrode (11) of the light emitting diode chip (2) is electrically connected to the upper end portion of the second external lead (7) by the lead thin wire (8), and the cathode electrode (12) is electrically conductive such as solder. The adhesive (9) is fixed to and electrically connected to the support surface (1a) of the support (1).
本実施の形態では、シリコン基板(21)と化合物半導体層(22)との間に発光層(23)の光を反射する反射膜層(24)が形成される。発光層(23)からシリコン基板(21)に直接向かう光を反射膜層(24)により反射して、発光ダイオードの輝度を更に向上することができる。反射膜層(24)は、例えば、アルミニウム、銀、金及び銅等の金属又はその合金により形成できる。また、反射膜層(24)は、シリコン基板(21)及び化合物半導体層(22)の全面又は略全面に形成することが好ましい。 In the present embodiment, a reflective film layer (24) that reflects light from the light emitting layer (23) is formed between the silicon substrate (21) and the compound semiconductor layer (22). The light directly directed from the light emitting layer (23) to the silicon substrate (21) is reflected by the reflective film layer (24), so that the luminance of the light emitting diode can be further improved. The reflective film layer (24) can be formed of a metal such as aluminum, silver, gold and copper or an alloy thereof, for example. The reflective film layer (24) is preferably formed on the entire surface or substantially the entire surface of the silicon substrate (21) and the compound semiconductor layer (22).
被覆体(4)は、例えば、不透明なシリコーン樹脂等の材料により形成され、粉末状の酸化チタン等の光反射性物質が配合される。被覆体(4)は、化合物半導体層(22)の発光層(23)と支持体(1)の支持面(1a)との間でシリコン基板(21)の側面(21b)の全体を環状に被覆する。被覆体(4)は、シリコーン樹脂以外の様々な樹脂により形成することができる。また、金属アルコキシド等の樹脂以外の材料により被覆体(4)を形成してもよい。シリコン基板(21)は、化合物半導体層(22)の発光層(23)が発する光に対して光吸収性を有し、被覆体(4)を有さない従来の発光ダイオードでは、発光層(23)が発する光のうち側壁(3)に反射してシリコン基板(21)に向かう光が吸収されるが、本実施の形態の発光ダイオード(10)では、支持面(1a)と発光層(23)との間でシリコン基板(21)の側面(21b)を被覆体(4)により被覆するので、被覆体(4)内に包含される光反射性物質により、シリコン基板(21)に向かう発光層(23)の光をシリコン基板(21)以外の方向に反射することができる。これにより、シリコン基板(21)による光の吸収量を減少して、発光ダイオードチップ(2)の上方に向かう光量を増大できる。 The cover (4) is formed of, for example, an opaque material such as silicone resin, and is mixed with a light reflecting substance such as powdered titanium oxide. The covering (4) is formed by annularly forming the entire side surface (21b) of the silicon substrate (21) between the light emitting layer (23) of the compound semiconductor layer (22) and the support surface (1a) of the support (1). Cover. The covering (4) can be formed of various resins other than the silicone resin. Further, the cover (4) may be formed of a material other than a resin such as a metal alkoxide. The silicon substrate (21) is light-absorbing with respect to the light emitted from the light-emitting layer (23) of the compound semiconductor layer (22), and in a conventional light-emitting diode having no covering (4), the light-emitting layer ( Of the light emitted by 23), the light reflected by the side wall (3) and directed to the silicon substrate (21) is absorbed.In the light emitting diode (10) of the present embodiment, the support surface (1a) and the light emitting layer ( 23), the side surface (21b) of the silicon substrate (21) is covered with the covering (4), and the light reflecting material contained in the covering (4) is directed toward the silicon substrate (21). The light of the light emitting layer (23) can be reflected in a direction other than the silicon substrate (21). Thereby, the amount of light absorbed by the silicon substrate (21) can be reduced, and the amount of light directed upward of the light emitting diode chip (2) can be increased.
側壁(3)内には、保護体(5)が配置され、保護体(5)は、被覆体(4)によって被覆されない発光ダイオードチップ(2)の上面(2a)、側面(2b)のｐ型半導体領域及び発光層(23)並びに被覆体(4)の上面(4a)を被覆する。保護体(5)は、例えば、光透過性の金属アルコキシド等の材料により形成され、粉末状の蛍光体(25)が配合される。支持体(1)の凹部の深さは、発光ダイオードチップ(2)の高さよりも大きいため、凹部内に十分な厚さで保護体(5)を形成することができる。保護体(5)内に配合される蛍光体(25)により、化合物半導体層(22)の発光層(23)から放出される光を波長変換することができる。保護体(5)内に蛍光体(25)が含有されていると、発光層(23)からの光が蛍光体(25)によって散乱され、シリコン基板(21)側に向かう光量が増大するが、これらの光は、被覆体(4)により発光ダイオードチップ(2)の上方に向かって反射される。保護体(5)は、シリコーン樹脂又はエポキシ系樹脂により形成してもよい。 A protective body (5) is disposed in the side wall (3). The upper surface (4a) of the type semiconductor region and the light emitting layer (23) and the covering (4) are covered. The protector (5) is formed of, for example, a material such as a light transmissive metal alkoxide, and is mixed with a powdered phosphor (25). Since the depth of the concave portion of the support (1) is larger than the height of the light emitting diode chip (2), the protective body (5) can be formed with a sufficient thickness in the concave portion. The wavelength of light emitted from the light emitting layer (23) of the compound semiconductor layer (22) can be converted by the phosphor (25) blended in the protective body (5). When the phosphor (25) is contained in the protector (5), the light from the light emitting layer (23) is scattered by the phosphor (25), and the amount of light toward the silicon substrate (21) increases. These lights are reflected upward of the light emitting diode chip (2) by the covering (4). The protector (5) may be formed of a silicone resin or an epoxy resin.
本実施の形態では、側壁(3)の内面(3a)は、階段状に形成され、化合物半導体層(22)の発光層(23)より下方で且つ支持体(1)の支持面(1a)の上方に形成された段差面(13)を備える。段差面(13)は、円形に形成された側壁(3)の内面(3a)に沿って環状に形成され、支持体(1)の支持面(1a)に対して平行に且つ平坦に形成される。側壁(3)の段差面(13)からの光反射を観察しながら、側壁(3)と発光ダイオードチップ(2)の側面(2b)との間に被覆体(4)を充填することにより、被覆体(4)が段差面(13)上に溢れたときに生じる光反射量の変化によって、被覆体(4)の充填を停止することができる。これにより、被覆体(4)が化合物半導体層(22)の発光層(23)の側面(23b)まで被覆することが防止される。被覆体(4)が段差面(13)を覆った際に光反射量の変化が生じるように、段差面(13)の表面は、被覆体(4)と相違する光反射率に形成される。被覆体(4)の光反射率との差を大きくするために、例えば、梨地加工等の周知の表面加工法により、段差面(13)の表面に複数の微細な凹凸を形成して、段差面(13)の光沢を低減させてもよい。段差面(13)の光沢を増加して、被覆体(4)の光反射率との差を大きくしてもよい。また、側壁(3)の内面(3a)全体に凹凸を形成してもよく、凹凸により側壁(3)と被覆体(4)及び保護体(5)との接着性を向上することができる。 In the present embodiment, the inner surface (3a) of the side wall (3) is formed in a stepped shape, below the light emitting layer (23) of the compound semiconductor layer (22), and on the support surface (1a) of the support (1). Is provided with a step surface (13) formed above. The step surface (13) is formed in an annular shape along the inner surface (3a) of the circular side wall (3), and is formed in parallel and flat with respect to the support surface (1a) of the support (1). The While observing light reflection from the stepped surface (13) of the side wall (3), filling the cover (4) between the side wall (3) and the side surface (2b) of the light emitting diode chip (2), The filling of the cover (4) can be stopped by the change in the amount of light reflection that occurs when the cover (4) overflows on the stepped surface (13). This prevents the covering (4) from covering the side surface (23b) of the light emitting layer (23) of the compound semiconductor layer (22). The surface of the step surface (13) is formed with a light reflectance different from that of the cover (4) so that the amount of light reflection changes when the cover (4) covers the step surface (13). . In order to increase the difference from the light reflectance of the covering (4), for example, by forming a plurality of fine irregularities on the surface of the step surface (13) by a known surface processing method such as satin processing, The gloss of the surface (13) may be reduced. The difference between the gloss of the stepped surface (13) and the light reflectance of the covering (4) may be increased. Further, unevenness may be formed on the entire inner surface (3a) of the side wall (3), and the adhesiveness between the side wall (3), the covering (4) and the protective body (5) can be improved by the unevenness.
更に、保護体(5)の上面、第１の外部リード(6)及び第２の外部リード(7)の一端は、光透過性を有するエポキシ樹脂等の材料から成る封止体(15)により被覆され、砲弾状に形成された封止体(15)の平坦な下面から第１の外部リード(6)及び第２の外部リード(7)の他端が導出される。 Further, the upper surface of the protective body (5) and one end of the first external lead (6) and the second external lead (7) are sealed by a sealing body (15) made of a material such as a light-transmitting epoxy resin. The other ends of the first external lead (6) and the second external lead (7) are led out from the flat lower surface of the sealing body (15) which is covered and formed in a bullet shape.
発光ダイオード(10)の第１の外部リード(6)及び第２の外部リード(7)間に電圧を印加し、発光ダイオードチップ(2)に通電して発光させると、保護体(5)内の蛍光体(25)によって発光ダイオードチップ(2)の光の一部がその発光波長と異なる他の波長に変換された後、封止体(15)を通じて発光ダイオード(10)の外部に放出される。例えば、GaN系化合物半導体層を有する発光ダイオードチップ(2)の光を蛍光物質を含有する保護体(5)により波長変換して白色光を発する発光ダイオード(10)を形成すると、発光ダイオードチップ(2)から放出される青色系の光と、青色系の光によって励起されて蛍光体(25)から放出される緑色系の光と赤色系の光とが混色する白色系の光を保護体(5)の外部に放出することができる。 When a voltage is applied between the first external lead (6) and the second external lead (7) of the light emitting diode (10) and the light emitting diode chip (2) is energized to emit light, the inside of the protective body (5) Part of the light from the light emitting diode chip (2) is converted into another wavelength different from the emission wavelength by the phosphor (25), and then emitted to the outside of the light emitting diode (10) through the sealing body (15). The For example, when a light emitting diode (10) that emits white light by converting the wavelength of light of a light emitting diode chip (2) having a GaN-based compound semiconductor layer by a protector (5) containing a fluorescent substance is formed, the light emitting diode chip ( Protective body (blue) light emitted from 2) and white light mixed with green light and red light emitted from the phosphor (25) when excited by blue light. 5) Can be released to the outside.
被覆体(4)を有さない従来の発光ダイオードでは、発光ダイオードチップ(2)の側面(2b)から放出される光の一部は、図１の光路Ｄに示すように、支持体(1)の支持面(1a)に反射して保護体(5)の外部に放出されるので、発光ダイオードチップ(2)の側面(2b)から放出される光路Ｄの光と発光ダイオードチップ(2)の上面(2a)から放出される光路Ａ及びＢの光とでは、保護体(5)を通過する距離に大きな違いが生じた。保護体(5)を通過する距離が異なると、蛍光体(25)による光の波長変換の程度も異なるため、発光ダイオードを上方から見たときに、発光ダイオードの中央側と外周側とで発光色にムラが生じた。この種の問題は、GaN系化合物半導体層を有する発光ダイオードチップと蛍光体を含有する保護体との組み合わせから成る白色発光ダイオードに限らず、他の半導体発光装置でも同様に生じる。 In the conventional light emitting diode not having the covering (4), a part of the light emitted from the side surface (2b) of the light emitting diode chip (2) is supported by the support (1 ) Is reflected off the support surface (1a) and emitted to the outside of the protector (5), so that the light in the optical path D emitted from the side surface (2b) of the light emitting diode chip (2) and the light emitting diode chip (2) There was a large difference in the distance passing through the protector (5) between the light beams A and B emitted from the upper surface (2a) of the light. When the distance passing through the protector (5) is different, the degree of wavelength conversion of light by the phosphor (25) is also different, so that when the LED is viewed from above, light is emitted from the center side and the outer periphery side of the LED. Color unevenness occurred. This type of problem is not limited to white light emitting diodes that are a combination of a light emitting diode chip having a GaN-based compound semiconductor layer and a protective material containing a phosphor, and similarly occurs in other semiconductor light emitting devices.
しかしながら、本実施の形態の発光ダイオード(10)によれば、図１の光路Ｃに示すように、被覆体(4)により発光ダイオードチップ(2)の側面(2b)から放出される光を反射して、従来よりも短い距離で保護体(5)を通過させることができる。よって、図１に示すように、保護体(5)を通る光路Ａ〜Ｃの長さの差が減少し、発光ダイオードチップ(2)の中央側と外周側とで光の波長変換率が均一化され、発光ダイオード(10)の発光に生じる色ムラを低減することができる。また、被覆体(4)によりシリコン基板(21)の光吸収量が減少され、発光ダイオードチップ(2)の外周側の輝度が向上するので、発光ダイオードチップ(2)の中央側と外周側とで発光輝度を均一化することができる。 However, according to the light emitting diode (10) of the present embodiment, the light emitted from the side surface (2b) of the light emitting diode chip (2) is reflected by the covering (4) as shown in the optical path C of FIG. Thus, the protector (5) can be passed through at a shorter distance than before. Therefore, as shown in FIG. 1, the difference in the length of the optical paths A to C passing through the protector (5) is reduced, and the light wavelength conversion rate is uniform between the central side and the outer peripheral side of the light emitting diode chip (2). The color unevenness caused by the light emission of the light emitting diode (10) can be reduced. Further, the light absorption amount of the silicon substrate (21) is reduced by the covering (4) and the luminance on the outer peripheral side of the light emitting diode chip (2) is improved, so that the central side and the outer peripheral side of the light emitting diode chip (2) The light emission luminance can be made uniform.
図１及び図２に示す発光ダイオード(10)を製造する際に、発光ダイオードチップ(2)は、例えば、周知のエピタキシャル成長法によってシリコンウエハ上にｎ型半導体領域、発光層(23)及びｐ型半導体領域が順次設けられ、化合物半導体層(22)が形成される。次に、化合物半導体層(22)のｎ型半導体領域の下面に蒸着又はスパッタリングによりアルミニウム等の金属膜が形成される。導電性を有するシリコン基板(21)は、シリコンウエハにｎ型又はｐ型不純物をドーピングして形成され、シリコン基板(21)の上面(21a)に蒸着又はスパッタリングによりアルミニウム等の金属膜が形成される。化合物半導体層(22)の下面の金属膜と、シリコン基板(21)の上面(21a)の金属膜とを接合し、接合された金属膜により反射膜層(24)が形成される。続いて、蒸着又はスパッタリングにより、ｐ型半導体領域上にアルミニウム等の金属膜から成るアノード電極(11)が形成され、シリコン基板(21)の下面にアルミニウム等の金属膜から成るカソード電極(12)が形成されて、発光ダイオードチップ(2)が完成する。 When manufacturing the light emitting diode (10) shown in FIGS. 1 and 2, the light emitting diode chip (2) is formed by, for example, an n-type semiconductor region, a light emitting layer (23) and a p-type on a silicon wafer by a known epitaxial growth method. Semiconductor regions are sequentially provided to form a compound semiconductor layer (22). Next, a metal film such as aluminum is formed on the lower surface of the n-type semiconductor region of the compound semiconductor layer (22) by vapor deposition or sputtering. The conductive silicon substrate (21) is formed by doping a silicon wafer with n-type or p-type impurities, and a metal film such as aluminum is formed on the upper surface (21a) of the silicon substrate (21) by vapor deposition or sputtering. The The metal film on the lower surface of the compound semiconductor layer (22) and the metal film on the upper surface (21a) of the silicon substrate (21) are joined together, and the reflective film layer (24) is formed by the joined metal film. Subsequently, an anode electrode (11) made of a metal film such as aluminum is formed on the p-type semiconductor region by vapor deposition or sputtering, and a cathode electrode (12) made of a metal film such as aluminum on the lower surface of the silicon substrate (21). Is formed to complete the light emitting diode chip (2).
次に、第１の外部リード(6)及び第２の外部リード(7)が用意され、側壁(3)により包囲された支持体(1)の支持面(1a)に発光ダイオードチップ(2)のカソード電極(12)が半田等の導電性接着剤(9)により固着される。続いて、図示しないディスペンサ等の充填装置により、発光ダイオードチップ(2)と側壁(3)との間の間隙に酸化チタン等の光反射性物質が配合された流動性のシリコーン樹脂等から成る保護体(5)が充填される。本実施の形態では、図示しない画像認識装置により、側壁(3)の段差面(13)からの光反射を観察しながら、図３に示すように、側壁(3)と発光ダイオードチップ(2)の側面(2b)との間に被覆体(4)を充填する。被覆体(4)は、支持面(1a)から上方に徐々に充填され、図４に示すように、被覆体(4)が段差面(13)上に溢れて、段差面(13)の光反射量が増大又は低減したとき、被覆体(4)の充填を停止する。段差面(13)は、化合物半導体層(22)の発光層(23)より下方で且つ支持体(1)の支持面(1a)の上方で側壁(3)に形成されるため、段差面(13)の光反射量が変化したときに、被覆体(4)の充填を停止することにより、発光ダイオードチップ(2)の側面(2b)に露出する発光層(23)の側面(23b)が被覆体(4)によって被覆されるのを防止できる。支持体(1)の支持面(1a)、側壁(3)の段差面(13)及び発光ダイオードチップ(2)の発光層(23)が略平行に形成されるため、側壁(3)内に被覆体(4)を充填したときに、被覆体(4)は、発光ダイオードチップ(2)の４つの側面(2b)を同様の高さで被覆して、確実にシリコン基板(21)の側面(21b)を被覆できる。 Next, a first external lead (6) and a second external lead (7) are prepared, and the light emitting diode chip (2) is provided on the support surface (1a) of the support body (1) surrounded by the side wall (3). The cathode electrode (12) is fixed by a conductive adhesive (9) such as solder. Subsequently, a protective device made of fluid silicone resin or the like in which a light reflecting substance such as titanium oxide is blended in the gap between the light emitting diode chip (2) and the side wall (3) by a filling device such as a dispenser (not shown). The body (5) is filled. In the present embodiment, as shown in FIG. 3, while observing light reflection from the stepped surface (13) of the side wall (3) by an image recognition device (not shown), the side wall (3) and the light emitting diode chip (2) are shown. The covering body (4) is filled between the side surface (2b) of the substrate. The covering (4) is gradually filled upward from the support surface (1a), and as shown in FIG. 4, the covering (4) overflows on the step surface (13), and the light on the step surface (13). When the amount of reflection increases or decreases, filling of the covering (4) is stopped. The step surface (13) is formed on the side wall (3) below the light emitting layer (23) of the compound semiconductor layer (22) and above the support surface (1a) of the support (1). When the amount of light reflection of 13) changes, the side surface (23b) of the light emitting layer (23) exposed to the side surface (2b) of the light emitting diode chip (2) is stopped by stopping the filling of the covering (4). It can prevent being covered with the covering (4). Since the support surface (1a) of the support (1), the stepped surface (13) of the side wall (3) and the light emitting layer (23) of the light emitting diode chip (2) are formed substantially in parallel, the side wall (3) When the covering (4) is filled, the covering (4) covers the four side surfaces (2b) of the light-emitting diode chip (2) at the same height to ensure the side surface of the silicon substrate (21). (21b) can be coated.
従来では、被覆体(4)の充填量又は充填時間により、側壁(3)内に配置される被覆体(4)の分量が決定されていたが、本実施の形態では、側壁(3)の段差面(13)と画像認識装置とにより、正確に化合物半導体層(22)の発光層(23)と支持体(1)の支持面(1a)との間でシリコン基板(21)の側面(21b)を被覆体(4)により被覆することができる。発光層(23)よりも低い高さで被覆体(4)の充填を停止するので、発光層(23)の光の放出が被覆体(4)により阻害されないと共に、発光層(23)に被覆体(4)による圧力が加わらないため、発光ダイオードチップ(2)の特性が圧力により劣化するのを防止できる。 Conventionally, the amount of the covering (4) disposed in the side wall (3) is determined by the filling amount or filling time of the covering (4), but in the present embodiment, the amount of the side wall (3) is determined. By using the stepped surface (13) and the image recognition device, the side surface of the silicon substrate (21) is precisely between the light emitting layer (23) of the compound semiconductor layer (22) and the support surface (1a) of the support (1) ( 21b) can be covered with a covering (4). Since the filling of the cover (4) is stopped at a lower height than the light emitting layer (23), the light emission of the light emitting layer (23) is not inhibited by the cover (4) and the light emitting layer (23) is covered. Since the pressure by the body (4) is not applied, the characteristics of the light-emitting diode chip (2) can be prevented from being deteriorated by the pressure.
続いて、周知のワイヤボンディング法により、発光ダイオードチップ(2)のアノード電極(11)と第２の外部リード(7)の上端部とがリード細線(8)により電気的に接続される。充填装置により、蛍光体(25)が配合された光透過性の流動性材料を充填し、これに熱処理を施して金属アルコキシドから成る保護体(5)が側壁(3)内に形成され、その後、モールド成型によって、保護体(5)の上面、第１の外部リード(6)及び第２の外部リード(7)の一端が光透過性を有するエポキシ樹脂等の材料により封止されて、封止体(15)が形成され、図２に示す発光ダイオード(10)が完成する。 Subsequently, the anode electrode (11) of the light-emitting diode chip (2) and the upper end portion of the second external lead (7) are electrically connected by a fine lead wire (8) by a well-known wire bonding method. The filling device fills the light-transmitting fluid material mixed with the phosphor (25), and heat-treats the material to form a protective body (5) made of metal alkoxide in the side wall (3). Then, by molding, the upper surface of the protective body (5) and one end of the first external lead (6) and the second external lead (7) are sealed with a material such as an epoxy resin having optical transparency, and sealed. A stop (15) is formed, and the light emitting diode (10) shown in FIG. 2 is completed.
本発明は、前記実施の形態に限定されず、更に種々の変更が可能である。例えば、化合物半導体層(22)は、GaN系の青色発光ダイオードチップに限定されず、GaP、GaAs、InP、GaAsP、InGaAlP、InGaAsP、GaAlAs又はZnSe系等の他の化合物半導体を適用してもよい。サファイア基板を備える発光ダイオードチップ(2)の周囲を被覆体(4)により被覆して、発光ダイオード(10)を形成してもよい。光吸収性が低いサファイア基板では、発光ダイオード(10)の輝度を向上する効果は、小さいが、被覆体(4)により発光ダイオードチップ(2)の中央側と外周側とで蛍光体(25)による光の波長変換率を均一化して、発光ダイオード(10)の発光に生じる色ムラを低減することができる。 The present invention is not limited to the embodiment described above, and various modifications can be made. For example, the compound semiconductor layer (22) is not limited to a GaN blue light emitting diode chip, and other compound semiconductors such as GaP, GaAs, InP, GaAsP, InGaAlP, InGaAsP, GaAlAs, or ZnSe may be applied. . The light emitting diode (10) may be formed by covering the periphery of the light emitting diode chip (2) including the sapphire substrate with the covering (4). In the sapphire substrate with low light absorption, the effect of improving the luminance of the light emitting diode (10) is small, but the phosphor (25) is formed between the central side and the outer peripheral side of the light emitting diode chip (2) by the covering (4). By making the wavelength conversion rate of the light uniform, it is possible to reduce color unevenness caused by light emission of the light emitting diode (10).
図２に示す砲弾型の発光ダイオード(10)に限らず、図５に示すように、表面実装型の発光ダイオード(20)に本発明を適用してもよい。発光ダイオード(20)では、支持体(1)は、エポキシ樹脂等の絶縁性材料から成る支持板と、支持板の外周面に配置された帯状の第１の外部リード(6)と、第１の外部リード(6)とは離間して支持板の外周面に配置された帯状の第２の外部リード(7)とを備える。発光ダイオードチップ(2)が固着される支持体(1)の支持面(1a)は、第１の外部リード(6)の一端の上面に形成される。側壁(3)内に配置されたリード細線(8)により、発光ダイオードチップ(2)のアノード電極(11)と支持板上に配置された第２の外部リード(7)の一端とが接続される。側壁(3)は、絶縁性材料により支持板と一体に又は別体に第１の外部リード(6)及び第２の外部リード(7)上に形成される。側壁(3)内には、前述した発光ダイオード(10)と同様に被覆体(4)及び保護体(5)が配置される。発光ダイオード(20)は、封止体(15)を備えず、湾曲した保護体(5)の上面が発光ダイオードチップ(2)の光を集光するレンズの役割を有する。 The present invention may be applied not only to the bullet-type light emitting diode (10) shown in FIG. 2, but also to a surface-mounted light emitting diode (20) as shown in FIG. In the light emitting diode (20), the support (1) includes a support plate made of an insulating material such as an epoxy resin, a strip-shaped first external lead (6) disposed on the outer peripheral surface of the support plate, and a first And a strip-shaped second external lead (7) disposed on the outer peripheral surface of the support plate at a distance from the external lead (6). The support surface (1a) of the support (1) to which the light emitting diode chip (2) is fixed is formed on the upper surface of one end of the first external lead (6). The anode electrode (11) of the light emitting diode chip (2) and one end of the second external lead (7) arranged on the support plate are connected by the thin lead wire (8) arranged in the side wall (3). The The side wall (3) is formed on the first external lead (6) and the second external lead (7) integrally or separately from the support plate by an insulating material. In the side wall (3), the covering (4) and the protective body (5) are arranged in the same manner as the light emitting diode (10) described above. The light emitting diode (20) does not include the sealing body (15), and the upper surface of the curved protective body (5) has a role of a lens that collects light of the light emitting diode chip (2).
図示する発光ダイオード(10,20)では、被覆体(4)は、発光層(23)と支持面(1a)との間でシリコン基板(21)の側面(21b)の全体を被覆するが、発光層(23)の下方に配置されるｎ型半導体領域又は反射膜層(24)が被覆体(4)から露出してもよい。導電性接着剤(9)の厚さが変化すると、支持面(1a)から発光層(23)までの高さも変化するが、少なくともシリコン基板(21)の側面(21b)を被覆体(4)により被覆することにより、シリコン基板(21)による光の吸収量を低減して、発光ダイオードチップ(2)の上方に向かう光量を増大することができる。 In the illustrated light emitting diode (10, 20), the covering (4) covers the entire side surface (21b) of the silicon substrate (21) between the light emitting layer (23) and the support surface (1a). The n-type semiconductor region or the reflective film layer (24) disposed below the light emitting layer (23) may be exposed from the covering (4). When the thickness of the conductive adhesive (9) changes, the height from the support surface (1a) to the light emitting layer (23) also changes, but at least the side surface (21b) of the silicon substrate (21) covers the covering (4). By covering with, it is possible to reduce the amount of light absorbed by the silicon substrate (21) and increase the amount of light directed upward of the light emitting diode chip (2).
図６に示すように、側壁(3)の高さを発光ダイオードチップ(2)の厚みよりも小さくしてもよい。側壁(3)の上面(3b)を発光層(23)よりも低くすれば、被覆体(4)を発光層(23)と支持体(1)の支持面(1a)との間に形成することができ、被覆体(4)が発光層(23)に接することを良好に防止できる。図６の発光ダイオード(30)では、側壁(3)の上面(3b)が前述した段差面(13)の役割を有する。側壁(3)の上面(3b)からの光反射を観察しながら、側壁(3)と発光ダイオードチップ(2)の側面(2b)との間に被覆体(4)を充填することにより、被覆体(4)が側壁(3)の上面(3b)上に溢れたときに生じる光反射量の変化によって、被覆体(4)の充填を停止することができる。 As shown in FIG. 6, the height of the side wall (3) may be smaller than the thickness of the light emitting diode chip (2). If the upper surface (3b) of the side wall (3) is made lower than the light emitting layer (23), the covering (4) is formed between the light emitting layer (23) and the support surface (1a) of the support (1). It is possible to satisfactorily prevent the covering (4) from coming into contact with the light emitting layer (23). In the light emitting diode (30) of FIG. 6, the upper surface (3b) of the side wall (3) serves as the step surface (13) described above. While observing light reflection from the upper surface (3b) of the side wall (3), the covering (4) is filled between the side wall (3) and the side surface (2b) of the light emitting diode chip (2), thereby covering the side wall (3). The filling of the covering (4) can be stopped by the change in the amount of light reflection that occurs when the body (4) overflows on the upper surface (3b) of the side wall (3).
本発明は、光吸収性の基板により構成される半導体発光素子を備える種々の半導体発光装置に良好に適用できる。 The present invention can be suitably applied to various semiconductor light emitting devices including a semiconductor light emitting element constituted by a light absorbing substrate.
(1)・・支持体、 (1a)・・支持面、 (2)・・発光ダイオードチップ（半導体発光素子）、 (2a)・・上面、 (2b)・・側面、 (3)・・側壁、 (3a)・・内面、 (4)・・被覆体、 (4a)・・上面、 (5)・・保護体、 (13)・・段差面、 (21)・・基板、 (21a)・・上面、 (22)・・化合物半導体層、 (23)・・発光層、 (24)・・反射膜層、 (25)・・蛍光体、 (1) ・ ・ Support, (1a) ・ ・ Support surface, (2) ・ ・ Light-emitting diode chip (semiconductor light-emitting device), (2a) ・ ・ Top surface, (2b) ・ ・ Side, (3) ・ ・ Side wall (3a) ・ ・ Inner surface, (4) ・ ・ Coating, (4a) ・ ・ Top surface, (5) ・ ・ Protective body, (13) ・ ・ Step surface, (21) ・ ・ Board, (21a) ・・ Top surface, (22) ・ ・ Compound semiconductor layer, (23) ・ ・ Light emitting layer, (24) ・ ・ Reflective film layer, (25) ・ ・ Phosphor,
Claims (4)
前記半導体発光素子は、基板と、該基板の上面に形成された発光層を含む化合物半導体層とを有し、
前記基板は、前記化合物半導体層の発光層が発する光に対して吸収性を有し、
前記被覆体は、前記化合物半導体層の発光層と前記支持体の支持面との間で前記基板の側面の全体を環状に被覆することを特徴とする半導体発光装置。 A support, a semiconductor light emitting device fixed to the support surface of the support, an annular side wall surrounding the semiconductor light emitting device and provided on an outer periphery of the support surface of the support, and disposed in the side wall Covering the side surface of the semiconductor light emitting element and including a light reflective material,
The semiconductor light emitting device has a substrate and a compound semiconductor layer including a light emitting layer formed on the upper surface of the substrate,
The substrate has absorbability with respect to light emitted from the light emitting layer of the compound semiconductor layer,
The said covering body coat | covers the whole side surface of the said board | substrate cyclically between the light emitting layer of the said compound semiconductor layer, and the support surface of the said support body, The semiconductor light-emitting device characterized by the above-mentioned.
該保護体に蛍光体を配合した請求項１に記載の半導体発光装置。 Providing a protector that covers the upper surface of the semiconductor light emitting element and the upper surface of the covering;
The semiconductor light-emitting device according to claim 1, wherein a phosphor is blended in the protective body.
前記段差面と前記被覆体との光反射率は、相違する請求項１又は２に記載の半導体発光装置。 The side wall includes a step surface formed on the inner surface below the light emitting layer of the compound semiconductor layer and above the support surface of the support,
3. The semiconductor light emitting device according to claim 1, wherein light reflectivities of the stepped surface and the covering are different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007000540A JP2008166661A (en) | 2007-01-05 | 2007-01-05 | Semiconductor light-emitting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007000540A JP2008166661A (en) | 2007-01-05 | 2007-01-05 | Semiconductor light-emitting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2008166661A true JP2008166661A (en) | 2008-07-17 |
Family
ID=39695711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007000540A Pending JP2008166661A (en) | 2007-01-05 | 2007-01-05 | Semiconductor light-emitting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008166661A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012506140A (en) * | 2008-10-17 | 2012-03-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Light emitting device |
| JP2014033168A (en) * | 2012-07-13 | 2014-02-20 | Nichia Chem Ind Ltd | Light-emitting device |
| US9472713B2 (en) | 2011-05-18 | 2016-10-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| JP2019207993A (en) * | 2018-05-30 | 2019-12-05 | シーシーエス株式会社 | LED light emitting device |
| US11056618B2 (en) | 2018-08-03 | 2021-07-06 | Lumileds Llc | Light emitting device with high near-field contrast ratio |
-
2007
- 2007-01-05 JP JP2007000540A patent/JP2008166661A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012506140A (en) * | 2008-10-17 | 2012-03-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Light emitting device |
| US9472713B2 (en) | 2011-05-18 | 2016-10-18 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| JP2014033168A (en) * | 2012-07-13 | 2014-02-20 | Nichia Chem Ind Ltd | Light-emitting device |
| JP2019207993A (en) * | 2018-05-30 | 2019-12-05 | シーシーエス株式会社 | LED light emitting device |
| JP7403944B2 (en) | 2018-05-30 | 2023-12-25 | シーシーエス株式会社 | LED light emitting device |
| US11056618B2 (en) | 2018-08-03 | 2021-07-06 | Lumileds Llc | Light emitting device with high near-field contrast ratio |
| TWI741339B (en) * | 2018-08-03 | 2021-10-01 | 美商亮銳公司 | Light emitting device and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI550910B (en) | Semiconductor light emitting device | |
| US20180261572A1 (en) | Manufacturing method of semiconductor light-emitting device | |
| JP4254266B2 (en) | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE MANUFACTURING METHOD | |
| JP5226449B2 (en) | Semiconductor light emitting device | |
| JP6038443B2 (en) | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device | |
| CN107210341B (en) | LED and method of manufacture | |
| TWI645577B (en) | Led with shaped growth substrate for side emission | |
| JP2008078500A (en) | Optical semiconductor device and method for manufacturing the same device | |
| JP2010056337A (en) | Light emitting device | |
| JP2007035802A (en) | Light-emitting device | |
| JP2007042668A (en) | Led light emitting device | |
| JP2006066449A (en) | Semiconductor light emitting device | |
| TW201537787A (en) | Semiconductor light-emitting device | |
| EP2461380A2 (en) | Light emitting device package and manufacturing method thereof | |
| JP2005026395A (en) | Semiconductor light emitting element and semiconductor light emitting device | |
| JP2004111882A (en) | Light emitting apparatus | |
| JP2017034218A (en) | Semiconductor light-emitting device | |
| JP2014241341A (en) | Semiconductor light-emitting device | |
| JPH11289110A (en) | Semiconductor light-emitting device | |
| JP2006012916A (en) | Light emitting device | |
| JP2023076696A (en) | LED display device | |
| US20180323344A1 (en) | Uv led package | |
| JP2008166661A (en) | Semiconductor light-emitting apparatus | |
| JP3798588B2 (en) | Light emitting diode | |
| JP2007201121A (en) | Semiconductor light emitting device and its manufacturing method |