JP2008159996A - Solar battery - Google Patents

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JP2008159996A
JP2008159996A JP2006349410A JP2006349410A JP2008159996A JP 2008159996 A JP2008159996 A JP 2008159996A JP 2006349410 A JP2006349410 A JP 2006349410A JP 2006349410 A JP2006349410 A JP 2006349410A JP 2008159996 A JP2008159996 A JP 2008159996A
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semiconductor substrate
electrode layer
silicon semiconductor
particles
aluminum powder
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JP4907333B2 (en
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Kenjiro Fukuda
憲次郎 福田
Yoji Furukubo
洋二 古久保
Toshifumi Azuma
登志文 東
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Kyocera Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

<P>PROBLEM TO BE SOLVED: To control curvature of a silicon semiconductor substrate 11 in a solar battery, while maintaining BSF effects, the solar battery that has formed a back electrode layer on a non-euphotic side of the silicon semiconductor substrate whose principal ingredient is aluminum. <P>SOLUTION: A conductive paste applied to a backside 11b of a semiconductor substrate 11 contains at least aluminum powder and organic vehicle, where the difference d<SB>90</SB>-d<SB>10</SB>between a particle size d<SB>90</SB>of 90% of the aluminum powder and a particle size d<SB>10</SB>of 10% of the aluminum powder is 13 μm or smaller. Such an equalization of the particle sizes of aluminum powder enables neck growth to be suppressed at calcination; and since this prevents rough and large particles from forming at an early stage of sintering, the average size of joined particles primarily constituted of aluminum on the back electrode layer 14 is made 40 μm or smaller. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、太陽電池に関する。   The present invention relates to a solar cell.

従来の太陽電池では、シリコン半導体基板の非受光面に形成される裏面電極層は、アルミニウム粉末を導電粒子として含む導体ペーストを塗布して焼成することにより得られていた。   In the conventional solar cell, the back electrode layer formed on the non-light-receiving surface of the silicon semiconductor substrate is obtained by applying and baking a conductor paste containing aluminum powder as conductive particles.

一方、太陽電池の製造原価を低減するためには、シリコン半導体基板を薄くすることが望まれる。しかし、シリコンとアルミニウムとでは熱膨張率が大きく異なるので、太陽電池においては、シリコン半導体基板を薄くするにつれて、シリコン半導体基板の反りが発生しやすくなり、製造工程における割れも発生しやすくなる。   On the other hand, in order to reduce the manufacturing cost of the solar cell, it is desired to make the silicon semiconductor substrate thin. However, since the thermal expansion coefficient differs greatly between silicon and aluminum, in a solar cell, as the silicon semiconductor substrate is made thinner, warpage of the silicon semiconductor substrate is likely to occur, and cracks in the manufacturing process are likely to occur.

このため、特許文献１では、アルミニウム粉末、ガラスフリット及び有機質ビヒクルに加えて、アルミニウム含有有機化合物を導体ペーストに含有させることにより、裏面電極層を薄くし、シリコン半導体基板の反りを抑制している。   For this reason, in Patent Document 1, in addition to the aluminum powder, glass frit, and organic vehicle, an aluminum-containing organic compound is included in the conductor paste, so that the back electrode layer is thinned and the warp of the silicon semiconductor substrate is suppressed. .

特開２０００−９０７３４号公報JP 2000-90734 A

しかし、特許文献１の技術では、裏面電極層からシリコン半導体基板へアルミニウムが拡散することによるキャリア収集効率の向上効果（ＢＳＦ（Back Surface Field）効果）が十分に得られなくなるという問題がある。   However, the technique of Patent Document 1 has a problem that the effect of improving the carrier collection efficiency (BSF (Back Surface Field) effect) due to the diffusion of aluminum from the back electrode layer to the silicon semiconductor substrate cannot be obtained sufficiently.

本発明は、この問題を解決するためになされたもので、十分なＢＳＦ効果が得られるにも関わらずシリコン半導体基板等の光電変換体の反りを抑制することができる板状の太陽電池を提供することを目的とする。   The present invention has been made to solve this problem, and provides a plate-like solar cell capable of suppressing the warpage of a photoelectric conversion body such as a silicon semiconductor substrate, although a sufficient BSF effect can be obtained. The purpose is to do.

上記課題を解決するため、請求項１の発明は、板状の光電変換体と前記光電変換体の非受光面に面上のひろがりをもって形成された裏面電極層とを備える太陽電池であって、前記裏面電極層の断面に観察される、複数の構成粒子が結合したアルミニウムを主成分とする結合粒子の平均寸法が４０μｍ以下であることを特徴とする。   In order to solve the above problems, the invention of claim 1 is a solar cell comprising a plate-like photoelectric converter and a back electrode layer formed on the non-light-receiving surface of the photoelectric converter with a spread on the surface, The average size of the binding particles mainly composed of aluminum in which a plurality of constituent particles are bonded, which is observed in the cross section of the back electrode layer, is 40 μm or less.

請求項２の発明は、前記裏面電極層の断面に観察される、前記裏面電極層のボイド率が２５％以上であることを特徴とする請求項１に記載の太陽電池である。   The invention according to claim 2 is the solar cell according to claim 1, wherein the void ratio of the back electrode layer observed in the cross section of the back electrode layer is 25% or more.

請求項３の発明は、前記結合粒子を分離して得られる粒子の５０％粒径ｄ50が７μｍ以下であることを特徴とする請求項１又は請求項２に記載の太陽電池である。 A third aspect of the present invention is the solar cell according to the first or second aspect, wherein the 50% particle diameter d 50 of the particles obtained by separating the binding particles is 7 μm or less.

請求項１ないし請求項３の発明によれば、十分なＢＳＦ効果を得るために必要な裏面電極層の厚みを確保しつつ、光電変換体の反りを効果的に抑制することができる。   According to the first to third aspects of the invention, the warpage of the photoelectric conversion body can be effectively suppressed while ensuring the thickness of the back electrode layer necessary for obtaining a sufficient BSF effect.

＜１ 太陽電池の構成＞
図１は、本発明の望ましい実施形態に係る太陽電池１の構成を示す図である。図１は、太陽電池１の断面構造を示す断面図となっている。 <1 Solar cell configuration>
FIG. 1 is a diagram showing a configuration of a solar cell 1 according to a preferred embodiment of the present invention. FIG. 1 is a sectional view showing a sectional structure of the solar cell 1.

図１に示すように、太陽電池１は、シリコン半導体基板１１を備える。シリコン半導体基板１１は、ｐ型のシリコン半導体基板１１の表面（受光面）１１ａの近傍をｎ型不純物層１１１とし、裏面（非受光面）１１ｂの近傍をｐ+層１１２とすることにより得られている。シリコン半導体基板１１は、ｐｎ接合を有する板状の光電変換体となっている。ｐ+層１１２は、シリコン半導体基板１１への光の照射により生成したキャリアの収集効率を向上させる役割を果たしている（ＢＳＦ効果）。 As shown in FIG. 1, the solar cell 1 includes a silicon semiconductor substrate 11. The silicon semiconductor substrate 11 is obtained by using the n-type impurity layer 111 in the vicinity of the front surface (light receiving surface) 11a of the p-type silicon semiconductor substrate 11 and the p + layer 112 in the vicinity of the back surface (non-light receiving surface) 11b. ing. The silicon semiconductor substrate 11 is a plate-like photoelectric conversion body having a pn junction. The p + layer 112 plays a role of improving the collection efficiency of carriers generated by irradiating the silicon semiconductor substrate 11 with light (BSF effect).

シリコン半導体基板１１の厚みは、特に制限されないが、典型的には、１００μｍ〜４００μｍである。また、ｎ型不純物層１１１の拡散深さも、特に制限されないが、典型的には、０．２μｍ〜０．５μｍである。   The thickness of the silicon semiconductor substrate 11 is not particularly limited, but is typically 100 μm to 400 μm. Further, the diffusion depth of the n-type impurity layer 111 is not particularly limited, but is typically 0.2 μm to 0.5 μm.

シリコン半導体基板１１の表面１１ａには、反射防止膜１２と、反射防止膜１２を貫通してｎ型不純物層１１１と接する格子状の表面電極１３とが形成されている。   On the surface 11 a of the silicon semiconductor substrate 11, an antireflection film 12 and a lattice-shaped surface electrode 13 that penetrates the antireflection film 12 and is in contact with the n-type impurity layer 111 are formed.

また、シリコン半導体基板１１の裏面１１ｂには、裏面電極層１４が略全面にひろがって形成されている。   In addition, a back electrode layer 14 is formed on the entire back surface 11b of the silicon semiconductor substrate 11 so as to spread over the entire surface.

＜２ 太陽電池の製造方法＞
続いて、太陽電池１の製造手順について、図２を参照しながら説明する。 <2 Manufacturing method of solar cell>
Then, the manufacturing procedure of the solar cell 1 is demonstrated, referring FIG.

太陽電池１の製造にあたっては、まず、ｐ型のシリコン半導体基板１１の表面１１ａからドナー不純物を拡散させ、表面１１ａの近傍がｎ型不純物層１１１となったシリコン半導体基板１１を得る（図２（Ａ））。   In manufacturing the solar cell 1, first, donor impurities are diffused from the surface 11 a of the p-type silicon semiconductor substrate 11 to obtain the silicon semiconductor substrate 11 in which the vicinity of the surface 11 a becomes the n-type impurity layer 111 (FIG. 2 ( A)).

続いて、シリコン半導体基板１１の表面１１ａには、酸化シリコン膜、酸化チタン膜、窒化シリコン膜等の反射防止膜１２がＰＥＣＶＤ法、蒸着法、スパッタ法などを用いて成膜されるとともに（図２（Ｂ））、銀ペースト等をスクリーン印刷して乾燥させることにより、格子状の表面電極１３が形成される（図２（Ｃ））。   Subsequently, an antireflection film 12 such as a silicon oxide film, a titanium oxide film, or a silicon nitride film is formed on the surface 11a of the silicon semiconductor substrate 11 using a PECVD method, a vapor deposition method, a sputtering method, or the like (see FIG. 2 (B)), a silver paste or the like is screen-printed and dried to form a lattice-shaped surface electrode 13 (FIG. 2C).

さらに、シリコン半導体基板１１の裏面１１ｂには、アルミニウム粉末を導体粒子として含む導体ペースト（以下、単に「ペースト」）をスクリーン印刷して乾燥させることにより、裏面１１ｂの略全面にひろがる裏面電極層１４が形成される（図２（Ｄ））。   Furthermore, a back surface electrode layer 14 that spreads over substantially the entire back surface 11b is formed on the back surface 11b of the silicon semiconductor substrate 11 by screen printing and drying a conductive paste containing aluminum powder as conductive particles (hereinafter simply “paste”). Is formed (FIG. 2D).

このようにして形成された表面電極１３及び裏面電極層１４は、アルミニウムの融点である６６０℃以上の温度で焼成され、裏面電極層１４からシリコン半導体基板１１へのアルミニウムの拡散によりｐ+層１１２が形成される。 The front electrode 13 and the back electrode layer 14 thus formed are baked at a temperature of 660 ° C. or higher, which is the melting point of aluminum, and the p + layer 112 is diffused by diffusion of aluminum from the back electrode layer 14 to the silicon semiconductor substrate 11. Is formed.

なお、裏面に形成される電極は、裏面のほぼ全面に形成したＡｌを主成分とする裏面電極層１４に加えて、出力を取り出すためにＡｇを主成分とする出力取出電極（不図示）を形成しても構わない。形成方法の一例としては、出力取出電極を形成する部位を除いた開口部を設けて裏面のほぼ全面にＡｌペーストをスクリーン印刷等により塗布・乾燥させ、開口部に対して銀等を主成分とする電極ペーストを一部Ａｌ電極と重なるように塗布して乾燥させ、焼成すればよい。また、裏面電極層１４を酸等により除去し、その代わりに銀ペースト等により新たな裏面電極層を形成しても、ｐ+層１１２によるＢＳＦ効果を有する太陽電池１を実現することができる。 The electrode formed on the back surface includes an output extraction electrode (not shown) mainly composed of Ag in order to extract output in addition to the back surface electrode layer 14 mainly composed of Al formed on almost the entire back surface. It may be formed. As an example of the forming method, an opening excluding the portion where the output extraction electrode is formed is provided, and Al paste is applied and dried on almost the entire back surface by screen printing or the like, and silver or the like is mainly contained in the opening. The electrode paste to be applied may be applied so as to partially overlap the Al electrode, dried, and fired. Further, the solar cell 1 having the BSF effect by the p + layer 112 can be realized by removing the back electrode layer 14 with an acid or the like and forming a new back electrode layer with a silver paste or the like instead.

＜３ ペーストについて＞
続いて、裏面電極層１４の形成に用いられるペーストについて説明する。 <3 About paste>
Next, the paste used for forming the back electrode layer 14 will be described.

ペーストは、少なくともアルミニウム粉末と有機質ビヒクルとを含有しており、アルミニウム粉末の９０％粒径ｄ90と１０％粒径ｄ10との差ｄ90−ｄ10が１３μｍ以下となっている。 The paste contains at least an aluminum powder and an organic vehicle, and the difference d 90 -d 10 between the 90% particle diameter d 90 and the 10% particle diameter d 10 of the aluminum powder is 13 μm or less.

このようにアルミニウム粉末の粒径を均一化すると、焼成の際のネック成長を抑制することができ、焼結初期に粗大粒子が形成されることを防ぐことができるので、裏面電極層１４において、アルミニウムを主成分とする結合粒子の平均寸法を４０μｍ以下とすることができる。そして、結合粒子の平均寸法が４０μｍ以下となると、シリコン半導体基板１１と裏面電極層１４との熱膨張率の差に起因する反りを抑制することができるので、裏面電極層１４を薄くしてＢＳＦ効果を低下させることなくシリコン半導体基板１１の反りを抑制することができる。   When the particle size of the aluminum powder is made uniform in this way, neck growth during firing can be suppressed, and coarse particles can be prevented from being formed in the early stage of sintering. The average dimension of the binding particles containing aluminum as a main component can be 40 μm or less. When the average size of the binding particles is 40 μm or less, warpage caused by the difference in thermal expansion coefficient between the silicon semiconductor substrate 11 and the back electrode layer 14 can be suppressed. Warpage of the silicon semiconductor substrate 11 can be suppressed without reducing the effect.

ここで、結合粒子とは、一の構成粒子の一部分と他の構成粒子の一部分とが焼結により結合するネック成長により、複数の構成粒子が結合して生成された粒子である。この結合粒子は、電子顕微鏡で観察すれば、樹脂等を介して結合したように見えるペースト中の粒子とは明確に区別することができる。   Here, the binding particles are particles generated by combining a plurality of constituent particles by neck growth in which a part of one constituent particle and a part of another constituent particle are combined by sintering. When these bonded particles are observed with an electron microscope, they can be clearly distinguished from the particles in the paste that appear to be bonded via a resin or the like.

結合粒子の寸法は、裏面電極層１４の断面に観察される結合粒子の最長部分の長さであり、結合粒子の平均寸法は、当該断面の４５μｍ×３０μｍの長方形領域に含まれる結合粒子の寸法を平均したものである。   The size of the binding particles is the length of the longest portion of the binding particles observed in the cross section of the back electrode layer 14, and the average size of the binding particles is the size of the binding particles included in a rectangular region of 45 μm × 30 μm of the cross section. Is the average.

また、アルミニウム粉末の粒径を均一化するとともに、フィラーとなる無機化合物粉末としてガラスフリットをペーストに含有させれば、裏面電極層１４のボイド率を上昇させることができる。なお、アルミニウム粉末の粒度分布やペースト組成を調整して、裏面電極層１４のボイド率を２５％以上とすれば、結合粒子の平均寸法をさらに小さくすることができ、シリコン半導体基板１１の反りをさらに減らすことができる。   In addition, the void ratio of the back electrode layer 14 can be increased by making the particle size of the aluminum powder uniform and by including glass frit in the paste as an inorganic compound powder serving as a filler. If the void ratio of the back electrode layer 14 is adjusted to 25% or more by adjusting the particle size distribution and paste composition of the aluminum powder, the average dimension of the bonded particles can be further reduced, and the warp of the silicon semiconductor substrate 11 can be reduced. It can be further reduced.

さらに、アルミニウム粉末の粒度分布やペースト組成を調整して、結合粒子を分離して得られる粒子（以下、「分離粒子」）の５０％粒径ｄ50が７μｍ以下となるようにすれば、シリコン半導体基板１１の反りをさらに減らすことができる。 Further, by adjusting the particle size distribution and paste composition of the aluminum powder so that the 50% particle size d 50 of particles obtained by separating the bonded particles (hereinafter referred to as “separated particles”) is 7 μm or less. The warp of the semiconductor substrate 11 can be further reduced.

分離粒子は、電極が形成されたシリコン半導体基板をイソプロピルアルコールに浸漬し、これを超音波分散器により剥離処理をした上で、この剥離した溶液（イソプロピルアルコールと電極成分の混合液）を直接マイクロトラック法で粒度測定することにより５０％粒径ｄ50を測定することができる。 The separated particles are obtained by immersing a silicon semiconductor substrate on which an electrode is formed in isopropyl alcohol, and performing an exfoliation process using an ultrasonic disperser, and then directly removing the exfoliated solution (mixed liquid of isopropyl alcohol and electrode components). By measuring the particle size by the track method, the 50% particle size d 50 can be measured.

なお、有機質ビヒクルとしては、エチルセルロースやニトロセルロースのような焼成後に灰分が残留しない繊維系樹脂、アクリル樹脂及びアルキッド樹脂等から選択される少なくとも１種類の樹脂をターピネオールやセロソルブ等の有機溶剤に溶解させたものを用いることができる。   The organic vehicle is prepared by dissolving at least one resin selected from a fiber-based resin such as ethyl cellulose and nitrocellulose, which does not retain ash after firing, an acrylic resin, and an alkyd resin, in an organic solvent such as terpineol or cellosolve. Can be used.

また、ガラスフリットとしては、Ｂ−Ｓｉ−Ｐｂ系、Ｂ−Ｓｉ−Ｂｉ系、Ｂ−Ｓｉ−Ｚｎ系及びＳｉ−Ｂｉ−Ｐｂ系等のものを用いることができる。   As the glass frit, B-Si-Pb, B-Si-Bi, B-Si-Zn, Si-Bi-Pb, or the like can be used.

以下では、本発明の実施例について説明する。   Examples of the present invention will be described below.

まず、アルミニウム粉末１００重量部に対して、Ｂ−Ｓｉ−Ｐｂ系のガラスフリット０〜５．０重量部とニトロセルロースをターピネオールに溶解させた有機質ビヒクル５．０〜１０．０重量部とを含有する１４種類のペーストを準備し、当該ペーストを用いて、図１に示す断面構造を有する太陽電池１の試料１〜１４を作製した。試料１〜１４の作製に用いたペーストに含まれるアルミニウム粉末の粒度分布と当該ペーストの組成とは表１に一覧で示されている。   First, 0 to 5.0 parts by weight of a B-Si-Pb glass frit and 5.0 to 10.0 parts by weight of an organic vehicle in which nitrocellulose is dissolved in terpineol with respect to 100 parts by weight of aluminum powder 14 types of pastes were prepared, and samples 1 to 14 of the solar cell 1 having the cross-sectional structure shown in FIG. 1 were prepared using the pastes. Table 1 shows a list of the particle size distribution of the aluminum powder contained in the paste used for preparing Samples 1 to 14 and the composition of the paste.

Figure 2008159996
Figure 2008159996

試料１〜試料１４の作製にあたっては、厚みが３００μｍで、５０ｍｍ×５０ｍｍの大きさの正方形板形状のシリコン半導体基板１１を用いた。また、試料１〜１４の作製にあたっては、１８０メッシュのスクリーン印刷用の製版を用いて、焼成後の裏面電極層１４の厚みが４５μｍ〜５５μｍとなるようにペーストを印刷し、赤外線焼成炉を用いて、焼成時間５分ピーク温度８００℃の条件で焼成を行った。   In the preparation of Sample 1 to Sample 14, a silicon semiconductor substrate 11 having a thickness of 300 μm and a square plate shape having a size of 50 mm × 50 mm was used. Moreover, in producing Samples 1 to 14, a 180-mesh screen printing plate making was used, the paste was printed so that the thickness of the back electrode layer 14 after firing was 45 μm to 55 μm, and an infrared firing furnace was used. The firing was performed under the conditions of a firing time of 5 minutes and a peak temperature of 800 ° C.

このようにして得られた試料１〜１４について、結合粒子の平均寸法、裏面電極層１４のボイド率、分離粒子の５０％粒径ｄ50及びシリコン半導体基板１１の反りを評価した結果を表１に示す。なお、試料１〜６は、本発明の範囲外の試料となっている。 Samples 1 to 14 obtained in this manner, Table 1 Average size of bound particles, the void ratio of the back electrode layer 14, the results of evaluation of the 50% warp of d 50 value, and the silicon semiconductor substrate 11 of the separating particles Shown in Samples 1 to 6 are samples outside the scope of the present invention.

結合粒子の平均寸法及び裏面電極層１４のボイド率は、評価対象の試料を樹脂に埋め込み、裏面電極層１４の断面が観察できるようにクロスセクションした後に、裏面電極層１４の断面を電子顕微鏡を用いて２０００倍の倍率で観察することにより評価した。   The average size of the binding particles and the void ratio of the back electrode layer 14 are obtained by embedding the sample to be evaluated in a resin and performing a cross section so that the cross section of the back electrode layer 14 can be observed. It was evaluated by observing at a magnification of 2000 times.

分離粒子の５０％粒径ｄ50は、評価対象の試料を水に浸漬し、約１０分間超音波処理して得られた分離粒子の粒度分布をレーザー回折散乱法で測定することにより評価した。 The 50% particle size d 50 of the separated particles was evaluated by measuring the particle size distribution of the separated particles obtained by immersing the sample to be evaluated in water and sonicating for about 10 minutes by a laser diffraction scattering method.

シリコン半導体基板１１の反りは、３次元形状測定器を用いて、平面上に載置されたシリコン半導体基板１１の最も低い部分と最も高い部分との高さの差を測定することにより評価した。   The warpage of the silicon semiconductor substrate 11 was evaluated by measuring the height difference between the lowest portion and the highest portion of the silicon semiconductor substrate 11 placed on a plane using a three-dimensional shape measuring instrument.

表１に示す評価結果から明らかなように、アルミニウム粉末のｄ90−ｄ10が１３μｍより大きくなる試料１〜試料６では、結合粒子の平均粒径が４０μｍより大きくなっており、シリコン半導体基板１１の反りが３ｍｍ以上となる。 As is apparent from the evaluation results shown in Table 1, in Samples 1 to 6, in which d 90 -d 10 of the aluminum powder is larger than 13 μm, the average particle diameter of the binding particles is larger than 40 μm, and the silicon semiconductor substrate 11 The warpage is 3 mm or more.

一方、アルミニウム粉末のｄ90−ｄ10が１３μｍ以下となる試料７〜試料１４では、結合粒子の平均粒径が４０μｍ以下となっており、シリコン半導体基板１１の反りも３ｍｍを下回っている。 On the other hand, in Samples 7 to 14 in which d 90 -d 10 of the aluminum powder is 13 μm or less, the average particle size of the binding particles is 40 μm or less, and the warp of the silicon semiconductor substrate 11 is also less than 3 mm.

また、アルミニウム粉末の粒度分布と有機質ビヒクルの含有量とを一定としたままガラスフリットの添加量を０．０重量部〜５．０重量部の範囲内で変化させた試料８〜１１の評価結果から明らかなように、ガラスフリットの含有量を増加させることにより、裏面電極層１４のボイド率を上昇させることができ、シリコン半導体基板１１の反りをさらに抑制することができる。特に、ガラスフリットの含有量を３．０重量部以上とした試料１０〜１１では、ボイド率が２５％以上となり、シリコン半導体基板１１の反りも１ｍｍ以下に抑制できている。   Evaluation results of Samples 8 to 11 in which the addition amount of the glass frit was changed within the range of 0.0 parts by weight to 5.0 parts by weight while keeping the particle size distribution of the aluminum powder and the content of the organic vehicle constant. As is apparent from the above, by increasing the glass frit content, the void ratio of the back electrode layer 14 can be increased, and the warpage of the silicon semiconductor substrate 11 can be further suppressed. In particular, in samples 10 to 11 in which the glass frit content is 3.0 parts by weight or more, the void ratio is 25% or more, and the warp of the silicon semiconductor substrate 11 can be suppressed to 1 mm or less.

さらに、アルミニウム粉末の粒度分布とガラスフリットの含有量とを一定としたまま有機質ビヒクルの含有量を５．０重量部〜１０．０重量部の範囲内で変化させた試料１０及び１２の評価結果から明らかなように、有機質ビヒクルの含有量を増加させることにより、裏面電極層１４のボイド率を上昇させることができ、シリコン半導体基板１１の反りをさらに抑制することができる。   Further, the evaluation results of Samples 10 and 12 in which the content of the organic vehicle was changed within the range of 5.0 parts by weight to 10.0 parts by weight while keeping the particle size distribution of the aluminum powder and the content of the glass frit constant. As can be seen from the above, by increasing the content of the organic vehicle, the void ratio of the back electrode layer 14 can be increased, and the warpage of the silicon semiconductor substrate 11 can be further suppressed.

本発明の望ましい実施形態に係る太陽電池１の断面構造を示す断面図である。It is sectional drawing which shows the cross-section of the solar cell 1 which concerns on desirable embodiment of this invention. 太陽電池１の製造手順を説明する図である。3 is a diagram for explaining a manufacturing procedure of the solar cell 1. FIG.

符号の説明Explanation of symbols

１ 太陽電池
１１ シリコン半導体基板
１１１ ｎ型不純物層
１１２ ｐ+層
１４ 裏面電極層 DESCRIPTION OF SYMBOLS 1 Solar cell 11 Silicon semiconductor substrate 111 N-type impurity layer 112 p + layer 14 Back surface electrode layer

Claims (3)

板状の光電変換体と前記光電変換体の非受光面に面上のひろがりをもって形成された裏面電極層とを備える太陽電池であって、
前記裏面電極層の断面に観察される、複数の構成粒子が結合したアルミニウムを主成分とする結合粒子の平均寸法が４０μｍ以下であることを特徴とする太陽電池。 A solar cell comprising a plate-like photoelectric converter and a back electrode layer formed on the non-light-receiving surface of the photoelectric converter with a spread on the surface,
The solar cell, wherein an average dimension of bonded particles mainly composed of aluminum to which a plurality of constituent particles are bonded, observed in a cross section of the back electrode layer, is 40 μm or less. 前記裏面電極層の断面に観察される、前記裏面電極のボイド率が２５％以上であることを特徴とする請求項１に記載の太陽電池。   The solar cell according to claim 1, wherein a void ratio of the back surface electrode observed in a cross section of the back surface electrode layer is 25% or more. 前記結合粒子を分離して得られる粒子の５０％粒径ｄ50が７μｍ以下であることを特徴とする請求項１又は請求項２に記載の太陽電池。 3. The solar cell according to claim 1, wherein a 50% particle diameter d 50 of particles obtained by separating the binding particles is 7 μm or less.
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