JP2008130590A - Composite processing apparatus, and composite processing method - Google Patents

Composite processing apparatus, and composite processing method Download PDF

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JP2008130590A
JP2008130590A JP2006310189A JP2006310189A JP2008130590A JP 2008130590 A JP2008130590 A JP 2008130590A JP 2006310189 A JP2006310189 A JP 2006310189A JP 2006310189 A JP2006310189 A JP 2006310189A JP 2008130590 A JP2008130590 A JP 2008130590A
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film
substrate
laser beam
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Shiro Hamada
史郎 浜田
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Sumitomo Heavy Industries Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a composite processing apparatus and a composite processing method enabling to satisfactorily execute processing. <P>SOLUTION: The composite processing apparatus is provided with a carrying device for carrying a one-directionally long film-like substrate in the length direction of the film-like substrate; a membrane forming device for forming a membrane on the film-like substrate; a first laser processing device for allowing a laser beam to be incident into the film-like substrate subjected to membrane formation in the membrane forming device and carried by the carrying device to execute annealing the membrane formed on the film-like substrate; and a second laser processing device for allowing a laser beam to be incident into the film-like substrate subjected to annealing in the first laser processing device and carried by the carrying device to remove a part of the membrane formed on the film-like substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、フィルム状の基板に対して、複数の処理を連続的に行う複合処理装置及び複合処理方法に関する。   The present invention relates to a composite processing apparatus and a composite processing method for continuously performing a plurality of processes on a film-like substrate.

フィルム状の長尺基板に対して成膜を行う工程と、成膜の行われた長尺基板に対して、レーザビームを照射して改質処理を行う工程とを、同じ搬送経路において連続して行うことにより、生産性を向上させることのできる、フィルム基板の複合処理装置及び方法の発明が開示されている（たとえば、特許文献１参照）。   The process of forming a film on a film-like long substrate and the process of performing a modification treatment by irradiating a laser beam on the film-formed long substrate are continuously performed in the same transport path. The invention of the composite processing apparatus and method of a film substrate which can improve productivity by carrying out is disclosed (for example, refer patent document 1).

このフィルム基板の複合処理装置及び方法を用いて、たとえば、フィルム状の長尺基板に対して、アモルファスシリコン膜を成膜し、そのアモルファスシリコン膜にレーザビームを照射して、ポリシリコン膜とすることができる。   Using this film substrate composite processing apparatus and method, for example, an amorphous silicon film is formed on a long film-like substrate, and the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. be able to.

特許第３５０３１１１号公報Japanese Patent No. 3503111

本発明の目的は、生産性の高い複合処理装置を提供することである。   An object of the present invention is to provide a complex processing apparatus with high productivity.

また、本発明の他の目的は、処理を良好に行うことのできる複合処理装置を提供することである。   Another object of the present invention is to provide a composite processing apparatus that can perform processing satisfactorily.

更に、本発明の他の目的は、生産性の高い複合処理方法を提供することである。   Furthermore, another object of the present invention is to provide a complex processing method with high productivity.

また、本発明の他の目的は、処理を良好に行うことのできる複合処理方法を提供することである。   Another object of the present invention is to provide a composite processing method capable of performing processing satisfactorily.

本発明の一観点によれば、一方向に長いフィルム状基板を、前記フィルム状基板の長さ方向に搬送する搬送装置と、前記フィルム状基板上に、成膜を行う成膜装置と、前記成膜装置で成膜が行われ、前記搬送装置で搬送された前記フィルム状基板にレーザビームを入射させて、前記フィルム状基板上に成膜された膜のアニールを行う第１のレーザ処理装置と、前記第１のレーザ処理装置でアニールが行われ、前記搬送装置で搬送された前記フィルム状基板にレーザビームを入射させて、前記フィルム状基板上に成膜された膜の一部を除去する第２のレーザ処理装置とを有する複合処理装置が提供される。   According to one aspect of the present invention, a transport device that transports a film-like substrate that is long in one direction in the length direction of the film-like substrate, a film-forming device that forms a film on the film-like substrate, A first laser processing apparatus that performs film formation in a film forming apparatus, and makes a laser beam incident on the film-shaped substrate transported by the transport device and anneals the film formed on the film-shaped substrate. Then, annealing is performed in the first laser processing apparatus, a laser beam is incident on the film-like substrate conveyed by the conveying device, and a part of the film formed on the film-like substrate is removed. And a second laser processing apparatus.

また、本発明の他の観点によれば、（ａ）一方向に長いフィルム状基板を準備する工程と、（ｂ）前記フィルム状基板上に、成膜を行う工程と、（ｃ）前記フィルム状基板を、前記フィルム状基板の長さ方向に搬送し、前記フィルム状基板の前記工程（ｂ）で成膜の行われた位置に、レーザビームを入射させ、前記工程（ｂ）で成膜された膜のアニールを行う工程と、（ｄ）前記フィルム状基板を、前記フィルム状基板の長さ方向に搬送し、前記フィルム状基板の前記工程（ｃ）でアニールの行われた位置に、レーザビームを入射させ、前記工程（ｂ）で成膜された膜の一部を除去する工程とを有する複合処理方法が提供される。   According to another aspect of the present invention, (a) a step of preparing a film-like substrate that is long in one direction, (b) a step of forming a film on the film-like substrate, and (c) the film The film-like substrate is conveyed in the length direction of the film-like substrate, and a laser beam is incident on the film-like substrate where the film is formed in the step (b), and the film-like substrate is formed in the step (b). And (d) transporting the film-like substrate in the length direction of the film-like substrate, and performing annealing on the film-like substrate in the step (c), And a step of removing a part of the film formed in the step (b) by applying a laser beam.

本発明によれば、生産性の高い複合処理装置を提供することができる。   According to the present invention, it is possible to provide a complex processing apparatus with high productivity.

また、本発明によれば、処理を良好に行うことのできる複合処理装置を提供することができる。   In addition, according to the present invention, it is possible to provide a composite processing apparatus that can perform processing satisfactorily.

更に、本発明によれば、生産性の高い複合処理方法を提供することができる。   Furthermore, according to the present invention, it is possible to provide a complex processing method with high productivity.

また、本発明によれば、処理を良好に行うことのできる複合処理方法を提供することができる。   In addition, according to the present invention, it is possible to provide a composite processing method capable of performing processing satisfactorily.

図１（Ａ）は、実施例による複合処理装置を示す概略図であり、図１（Ｂ）及び（Ｃ）は、変形例を示す概略図である。   FIG. 1A is a schematic diagram illustrating a composite processing apparatus according to an embodiment, and FIGS. 1B and 1C are schematic diagrams illustrating modifications.

図１（Ａ）を参照する。実施例による複合処理装置は、フィルム状の長尺基板１０上に成膜を行う成膜装置１１、成膜装置１１で形成された膜にレーザビームを照射してたとえばアニール処理を行うレーザ光源１２ａ及び光学系１３ａ、成膜装置１１で形成された膜をパタニングするレーザ光源１２ｂ及び光学系１３ｂ、パタニング処理の行われる位置のブローを行う送風器１４、モータで駆動され、長尺基板１０を巻き取って一方向に搬送する巻き取りロール１６を含んで構成される。フィルム状の長尺基板１０は、たとえば絶縁性の透明基板であり、厚さ６０μｍのポリエチレンテレフタレート(polyethylene terephthalate; PET)で形成され、ロール状に巻かれたロール体１５として準備される。   Reference is made to FIG. The composite processing apparatus according to the embodiment includes a film forming apparatus 11 that forms a film on a long film-like substrate 10, and a laser light source 12a that performs an annealing process by irradiating the film formed by the film forming apparatus 11 with a laser beam, for example. And the optical system 13a, the laser light source 12b for patterning the film formed by the film forming apparatus 11, the optical system 13b, the blower 14 for blowing the position where the patterning process is performed, and the motor driven to wind the long substrate 10. It is configured to include a take-up roll 16 that takes and conveys it in one direction. The film-like long substrate 10 is, for example, an insulating transparent substrate, is formed of polyethylene terephthalate (PET) having a thickness of 60 μm, and is prepared as a roll body 15 wound in a roll shape.

成膜装置１１は、複数の成膜室を含む。それぞれの成膜室においては、たとえばＰＶＤ(physicalvapor deposition)を用い、成膜を行うことができる。半導体膜やＩＴＯ(indium tin oxide)膜が形成される。   The film forming apparatus 11 includes a plurality of film forming chambers. In each film formation chamber, film formation can be performed using, for example, PVD (physical vapor deposition). A semiconductor film or an ITO (indium tin oxide) film is formed.

レーザ光源１２ａ及び１２ｂは、たとえばともにＮｄ：ＹＡＧレーザ発振器を含み、Ｎｄ：ＹＡＧレーザの２倍高調波（波長５３２ｎｍ）を出射する。   The laser light sources 12a and 12b both include, for example, an Nd: YAG laser oscillator, and emit a second harmonic (wavelength 532 nm) of the Nd: YAG laser.

光学系１３ａは、たとえばレーザビームのエネルギを減衰させるアッテネータ、ビーム断面内で強度を均一に近づけるホモジナイザ、一方向に長い形状を有する透光領域と、遮光領域とを備え、ビームの断面形状を整形するマスク、及び、マスクの透光領域の形状をビーム照射面に結像させる結像レンズを含んで構成される。   The optical system 13a includes, for example, an attenuator that attenuates the energy of the laser beam, a homogenizer that makes the intensity uniform within the beam cross section, a translucent area that is long in one direction, and a light shielding area, and shapes the cross sectional shape of the beam And a focusing lens that forms an image of the shape of the light transmission region of the mask on the beam irradiation surface.

レーザ光源１２ａを出射したパルスレーザビームは、光学系１３ａによって、ビーム断面内の強度分布が一様な、長尺状のレーザビームに整形されて、フィルム状の長尺基板１０上に形成された膜にたとえば垂直方向から照射され、半導体膜のアニールが行われる。長尺状のレーザビームは、たとえばビームの長さ方向と長尺基板１０の幅方向とが平行な方向となるように、長尺基板１０に照射される。   The pulse laser beam emitted from the laser light source 12a was shaped by the optical system 13a into a long laser beam having a uniform intensity distribution in the beam cross section, and formed on the film-like long substrate 10. The film is irradiated, for example, from the vertical direction, and the semiconductor film is annealed. The long laser beam is irradiated on the long substrate 10 such that the length direction of the beam and the width direction of the long substrate 10 are parallel to each other, for example.

光学系１３ｂは、たとえばガルバノスキャナ及びｆθレンズを含んで構成される。レーザ光源１３ａを出射したパルスレーザビームは、スポット状に集光されてフィルム状の長尺基板１０上に形成された膜上をたとえば垂直方向から走査され、膜のパタニングが行われる。   The optical system 13b includes, for example, a galvano scanner and an fθ lens. The pulse laser beam emitted from the laser light source 13a is condensed in a spot shape and scanned on the film formed on the film-like long substrate 10 from the vertical direction, for example, to pattern the film.

アニール及びパタニングは、長尺基板１０を縦にした部分、たとえば支持体１７ａ、１７ｂを用いて、長尺基板１０の一部を長さ方向と鉛直方向とが平行になるように支持し、その部分で行う。長尺基板１０を縦にしてアニールを行うことで、複合処理装置を小型化することができる。また、長尺基板１０を縦にしてパタニングを行うことで、パタニングの際に発生する塵（除去物）が、長尺基板１０に付着することを抑止することができる。このため処理を良好に行うことができる。   Annealing and patterning are performed by supporting a part of the long substrate 10 so that the length direction and the vertical direction are parallel by using a vertical portion of the long substrate 10, for example, support bodies 17 a and 17 b. Do in part. By annealing the long substrate 10 in the vertical direction, the composite processing apparatus can be downsized. Further, by performing the patterning with the long substrate 10 in the vertical direction, it is possible to prevent the dust (removed material) generated during the patterning from adhering to the long substrate 10. For this reason, processing can be performed satisfactorily.

なお、パタニング位置の長尺基板１０は、厳密に長さ方向と鉛直方向とが平行になるように支持される必要はなく、レーザビーム入射側から見て鉛直方向とのなす角度が＋１０°〜−４５°であれば、発生する塵（除去物）の付着を抑止することができるであろう。   The long substrate 10 in the patterning position does not need to be supported so that the length direction and the vertical direction are strictly parallel, and the angle formed with the vertical direction when viewed from the laser beam incident side is + 10 ° to If it is -45 degrees, adhesion of the generated dust (removed material) could be suppressed.

レーザビーム入射側から見て鉛直方向とのなす角度が＋１０°の場合を図１（Ｂ）に示し、レーザビーム入射側から見て鉛直方向とのなす角度が−４５°の場合を図１（Ｃ）に示した。   FIG. 1B shows the case where the angle formed with the vertical direction when viewed from the laser beam incident side is + 10 °, and FIG. 1B shows the case where the angle formed with the vertical direction when viewed from the laser beam incident side is −45 °. C).

再び図１（Ａ）を参照する。送風器１４は、パタニング位置のブローを行う。ブローにより、一層、パタニングの際に発生する塵（除去物）の、長尺基板１０への付着を抑止することができる。   Reference is again made to FIG. The blower 14 blows the patterning position. By blowing, it is possible to further suppress adhesion of dust (removed material) generated during patterning to the long substrate 10.

なお、実施例による複合処理装置においては、成膜装置１１でＰＶＤを用いて成膜を行うが、成膜はＣＶＤ(chemical vapor deposition)その他の成膜技術を用いて行うこともできる。   In the composite processing apparatus according to the embodiment, the film forming apparatus 11 forms a film using PVD, but the film forming can also be performed using a CVD (chemical vapor deposition) or other film forming technique.

また、アニールとパタニングにそれぞれ１台ずつ、計２台のレーザ発振器を用いたが、１台のレーザ発振器から出射されたレーザビームを、たとえばハーフミラーで２分岐して、アニールとパタニングに用いてもよい。   In addition, two laser oscillators, one each for annealing and patterning, were used, but the laser beam emitted from one laser oscillator was split into two by, for example, a half mirror and used for annealing and patterning. Also good.

更に、長尺基板１０は、ＰＥＴの他、たとえばポリエーテルスルホン(polyethersulfone; PES)、ポリエチレンナフタレート(polyethylene naphthalate; PEN)、アラミド、ポリイミド等の絶縁性プラスチックを用いて形成することができる。   Furthermore, the long substrate 10 can be formed using, for example, an insulating plastic such as polyethersulfone (PES), polyethylene naphthalate (PEN), aramid, and polyimide in addition to PET.

図２（Ａ）及び（Ｂ）を用いて、実施例による複合処理方法を説明する。   A composite processing method according to the embodiment will be described with reference to FIGS.

図２（Ａ）を参照する。たとえば厚さ６０μｍのＰＥＴで形成された長尺基板１０が、成膜装置に搬送される。長尺基板１０上には、成膜装置の各成膜室で、たとえば厚さ１〜２μｍのＩＴＯで形成された第１電極層２１、厚さ０．０２〜０．０５μｍのｐ型シリコン層２２、厚さ０．５〜１μｍのｎ型シリコン層２３、厚さ１〜２μｍのＩＴＯで形成された第２電極層２４が、この順に積層される。   Reference is made to FIG. For example, a long substrate 10 formed of PET having a thickness of 60 μm is transported to a film forming apparatus. On the long substrate 10, a first electrode layer 21 made of, for example, ITO having a thickness of 1 to 2 μm and a p-type silicon layer having a thickness of 0.02 to 0.05 μm in each film forming chamber of the film forming apparatus. 22, an n-type silicon layer 23 having a thickness of 0.5 to 1 μm and a second electrode layer 24 formed of ITO having a thickness of 1 to 2 μm are laminated in this order.

成膜の行われた長尺基板１０は、巻き取りロールによって、長尺基板１０の長さ方向に搬送され、長尺状に整形されたパルスレーザビームが照射されてアニールが行われる。レーザビームは第２電極層２４の表面から、膜が形成された長尺基板１０に入射する。アニールによって、半導体層（ｐ型シリコン層２２及びｎ型シリコン層２３）を活性化させ、結晶性を良好にすることができる。たとえば、アモルファスシリコンで形成された半導体層を、多結晶シリコン層に改質することができる。   The long substrate 10 on which the film has been formed is transported in the length direction of the long substrate 10 by a take-up roll, and is irradiated with a pulse laser beam shaped into a long shape and annealed. The laser beam is incident on the long substrate 10 on which the film is formed from the surface of the second electrode layer 24. By annealing, the semiconductor layers (p-type silicon layer 22 and n-type silicon layer 23) can be activated and the crystallinity can be improved. For example, a semiconductor layer formed of amorphous silicon can be modified into a polycrystalline silicon layer.

図２（Ｂ）を参照する。アニール処理の行われた長尺基板１０は、更に、長尺基板１０の長さ方向に搬送され、パタニング処理が施される。パタニングは、成膜装置で形成された膜の一部にレーザビームを照射し、照射位置の膜を選択的に除去することで行う。   Reference is made to FIG. The long substrate 10 subjected to the annealing process is further transported in the length direction of the long substrate 10 and subjected to a patterning process. Patterning is performed by irradiating a part of the film formed by the film forming apparatus with a laser beam and selectively removing the film at the irradiation position.

本図に示すのは、パタニングによって形成される被加工単位の一つである。長尺基板１０には、多数の被加工単位が連続的に形成される。一つの被加工単位を基にして、たとえば一つの太陽電池が製造される。   This figure shows one of the units to be processed formed by patterning. A large number of units to be processed are continuously formed on the long substrate 10. For example, one solar cell is manufactured based on one unit to be processed.

パタニングにより、たとえば一つの被加工単位における第２電極層２４の周辺領域を除去し、ｎ型シリコン層２３を露出させる。また、ｐ型シリコン層２２及びｎ型シリコン層２３の一部、たとえば一つの被加工単位における両層２２、２３の周辺領域を除去し、第１電極層２１を露出させる。   By patterning, for example, the peripheral region of the second electrode layer 24 in one unit to be processed is removed, and the n-type silicon layer 23 is exposed. Further, a part of the p-type silicon layer 22 and the n-type silicon layer 23, for example, the peripheral region of both layers 22 and 23 in one unit to be processed is removed, and the first electrode layer 21 is exposed.

第１電極層２１を露出させることで、たとえば太陽電池を製造する際に容易に配線を行うことができる。また、ｎ型シリコン層２３を露出させ、階段状の構造を形成し、第１電極層２１と第２電極層２４とを高さ方向に連続させないことで、両電極２１、２４間のショートを抑止することができる。   By exposing the first electrode layer 21, for example, when a solar cell is manufactured, wiring can be easily performed. Further, the n-type silicon layer 23 is exposed, a stepped structure is formed, and the first electrode layer 21 and the second electrode layer 24 are not continuous in the height direction, so that a short circuit between the electrodes 21 and 24 is prevented. Can be deterred.

実施例による複合処理方法によれば、成膜、アニール、パタニングの各処理を長尺基板の長さ方向に沿う搬送経路において連続的に行うため、高い生産性で処理を行うことができる。   According to the composite processing method according to the embodiment, the film forming process, the annealing process, and the patterning process are continuously performed in the transport path along the length direction of the long substrate, so that the process can be performed with high productivity.

図３（Ａ）及び（Ｂ）は、長尺基板１０上に形成される膜構造の他の例を示す概略的な断面図である。   FIGS. 3A and 3B are schematic cross-sectional views showing another example of the film structure formed on the long substrate 10.

図３（Ａ）に示すように、長尺基板１０上に、たとえば厚さ１〜２μｍのＩＴＯで形成された第１電極層２１、厚さ３〜４μｍのｐ型ＣｕＩｎＳｅ２層２５、厚さ０．０１〜０．０３μｍのｐ型ＣｕＩｎＳ２層２６、厚さ０．０２〜０．１μｍのｎ型ＣｄＳ（ＣｄＺｎＳ）層２７、及び、厚さ１〜２μｍのＩＴＯで形成された第２電極層２４を、この順に積層することもできる。 As shown in FIG. 3A, on a long substrate 10, for example, a first electrode layer 21 made of ITO having a thickness of 1 to 2 μm, a p-type CuInSe 2 layer 25 having a thickness of 3 to 4 μm, a thickness, and the like. A p-type CuInS 2 layer 26 having a thickness of 0.01 to 0.03 μm, an n-type CdS (CdZnS) layer 27 having a thickness of 0.02 to 0.1 μm, and a second electrode formed of ITO having a thickness of 1 to 2 μm The layer 24 can also be laminated in this order.

図３（Ｂ）に示すように、パタニングにより、たとえば一つの被加工単位における第２電極層２４の周辺領域を除去し、ｎ型ＣｄＳ（ＣｄＺｎＳ）層２７を露出させる。また、ｐ型ＣｕＩｎＳｅ２層２５、ｐ型ＣｕＩｎＳ２層２６、及び、ｎ型ＣｄＳ（ＣｄＺｎＳ）層２７の一部、たとえば一つの被加工単位における前記三層２５〜２７の周辺領域を除去し、第１電極層２１を露出させる。 As shown in FIG. 3B, for example, the peripheral region of the second electrode layer 24 in one unit to be processed is removed by patterning, and the n-type CdS (CdZnS) layer 27 is exposed. Further, a part of the p-type CuInSe 2 layer 25, the p-type CuInS 2 layer 26, and the n-type CdS (CdZnS) layer 27, for example, the peripheral region of the three layers 25 to 27 in one unit to be processed is removed. The first electrode layer 21 is exposed.

以上、実施例に沿って本発明を説明したが、本発明はこれらに限定されるものではない。   As mentioned above, although this invention was demonstrated along the Example, this invention is not limited to these.

たとえば、図１に示した複合処理装置においては、アニールを行うレーザ光源と光学系とを成膜装置の下流に配置し、第２電極層までのすべての成膜を終えた後にアニールを行った。第１電極層、ｐ型半導体層、及び、ｎ型半導体層を形成する成膜装置の下流にアニールのためのレーザ光源と光学系とを配置し、第２電極層を成膜する前にアニールを行うこともできる。その場合、第２電極層を形成する成膜装置は、アニール実施位置より下流に配置する。   For example, in the combined processing apparatus shown in FIG. 1, a laser light source and an optical system for annealing are arranged downstream of the film forming apparatus, and annealing is performed after all the film formation up to the second electrode layer is completed. . A laser light source and an optical system for annealing are arranged downstream of the film forming apparatus for forming the first electrode layer, the p-type semiconductor layer, and the n-type semiconductor layer, and annealing is performed before forming the second electrode layer. Can also be done. In that case, the film forming apparatus for forming the second electrode layer is disposed downstream from the annealing position.

また、アニールやパタニングを行うレーザビームは基板垂直方向からの入射に限らず、ビームの光軸方向と基板面内方向とのなす角が±２５°以下であればよい。   Further, the laser beam for annealing and patterning is not limited to the incidence from the substrate vertical direction, and the angle formed between the optical axis direction of the beam and the in-plane direction of the substrate may be ± 25 ° or less.

その他、種々の変更、改良、組み合わせ等が可能なことは当業者には自明であろう。   It will be apparent to those skilled in the art that other various modifications, improvements, combinations, and the like are possible.

フィルム状の長尺基板に、成膜、アニール、パタニングの各処理を連続的に行う複合処理、殊に太陽電池を製造するための複合処理に好適に利用することができる。   The film-like long substrate can be suitably used for a composite process in which film forming, annealing, and patterning processes are successively performed, particularly for a composite process for manufacturing a solar cell.

（Ａ）は、実施例による複合処理装置を示す概略図であり、（Ｂ）及び（Ｃ）は、変形例を示す概略図である。(A) is the schematic which shows the compound processing apparatus by an Example, (B) And (C) is the schematic which shows a modification. （Ａ）及び（Ｂ）は、実施例による複合処理方法を説明するための概略的な断面図である。(A) And (B) is a schematic sectional drawing for demonstrating the compound processing method by an Example. （Ａ）及び（Ｂ）は、長尺基板１０上に形成される膜構造の他の例を示す概略的な断面図である。(A) And (B) is a schematic sectional drawing which shows the other example of the film | membrane structure formed on the elongate board | substrate 10. FIG.

符号の説明Explanation of symbols

１０ 長尺基板
１１ 成膜装置
１２ａ、１２ｂ レーザ光源
１３ａ、１３ｂ 光学系
１４ 送風器
１５ ロール体
１６ 巻き取りロール
１７ａ、１７ｂ 支持体
２１ 第１電極層
２２ ｐ型シリコン層
２３ ｎ型シリコン層
２４ 第２電極層
２５ ｐ型ＣｕＩｎＳｅ２層
２６ ｐ型ＣｕＩｎＳ２層
２７ ｎ型ＣｄＳ（ＣｄＺｎＳ）層 DESCRIPTION OF SYMBOLS 10 Long board | substrate 11 Film-forming apparatus 12a, 12b Laser light source 13a, 13b Optical system 14 Blower 15 Roll body 16 Winding roll 17a, 17b Support body 21 1st electrode layer 22 p-type silicon layer 23 n-type silicon layer 24 1st 2 electrode layer 25 p-type CuInSe 2 layer 26 p-type CuInS 2 layer 27 n-type CdS (CdZnS) layer

Claims (8)

一方向に長いフィルム状基板を、前記フィルム状基板の長さ方向に搬送する搬送装置と、
前記フィルム状基板上に、成膜を行う成膜装置と、
前記成膜装置で成膜が行われ、前記搬送装置で搬送された前記フィルム状基板にレーザビームを入射させて、前記フィルム状基板上に成膜された膜のアニールを行う第１のレーザ処理装置と、
前記第１のレーザ処理装置でアニールが行われ、前記搬送装置で搬送された前記フィルム状基板にレーザビームを入射させて、前記フィルム状基板上に成膜された膜の一部を除去する第２のレーザ処理装置と
を有する複合処理装置。 A transport device that transports a long film-like substrate in one direction in the length direction of the film-like substrate;
A film forming apparatus for forming a film on the film substrate;
First laser treatment is performed in which film formation is performed by the film formation apparatus, a laser beam is incident on the film-like substrate conveyed by the conveyance device, and the film formed on the film-like substrate is annealed Equipment,
First annealing is performed in the first laser processing apparatus, and a part of the film formed on the film-like substrate is removed by making a laser beam incident on the film-like substrate conveyed by the conveying device. A combined processing apparatus having two laser processing apparatuses. 前記搬送装置が、前記第２のレーザ処理装置が前記フィルム状基板にレーザビームを入射させる位置において、レーザビームの入射方向側から見て鉛直方向とのなす角が−４５°〜＋１０°となるように、前記フィルム状基板を支持する支持体を含む請求項１に記載の複合処理装置。   In the position where the second laser processing apparatus makes the laser beam incident on the film-like substrate, the transport device has an angle of −45 ° to + 10 ° with the vertical direction when viewed from the incident direction side of the laser beam. The composite processing apparatus according to claim 1, further comprising a support that supports the film-like substrate. 更に、前記第２のレーザ処理装置が前記フィルム状基板にレーザビームを入射させる位置に向かって、ブローを行う送風器を含む請求項１または２に記載の複合処理装置。   The composite processing apparatus according to claim 1, further comprising a blower that blows the second laser processing apparatus toward a position where a laser beam is incident on the film-like substrate. （ａ）一方向に長いフィルム状基板を準備する工程と、
（ｂ）前記フィルム状基板上に、成膜を行う工程と、
（ｃ）前記フィルム状基板を、前記フィルム状基板の長さ方向に搬送し、前記フィルム状基板の前記工程（ｂ）で成膜の行われた位置に、レーザビームを入射させ、前記工程（ｂ）で成膜された膜のアニールを行う工程と、
（ｄ）前記フィルム状基板を、前記フィルム状基板の長さ方向に搬送し、前記フィルム状基板の前記工程（ｃ）でアニールの行われた位置に、レーザビームを入射させ、前記工程（ｂ）で成膜された膜の一部を除去する工程と
を有する複合処理方法。 (A) preparing a long film-like substrate in one direction;
(B) forming a film on the film-like substrate;
(C) The film-like substrate is conveyed in the length direction of the film-like substrate, and a laser beam is incident on the film-like substrate where the film is formed in the step (b). annealing the film formed in b);
(D) The film-like substrate is transported in the length direction of the film-like substrate, and a laser beam is incident on the film-like substrate where the annealing is performed in the step (c). And a step of removing a part of the film formed in (1). 前記工程（ｄ）で、レーザビームの入射位置において、レーザビームの入射方向側から見て鉛直方向とのなす角が−４５°〜＋１０°となるように、前記フィルム状基板を支持した状態で、レーザビームを入射させる請求項４に記載の複合処理方法。   In the step (d), in a state where the film-like substrate is supported so that the angle formed with the vertical direction when viewed from the incident direction side of the laser beam is −45 ° to + 10 ° at the incident position of the laser beam. The composite processing method according to claim 4, wherein a laser beam is incident. 前記工程（ｄ）で、レーザビームの入射位置に向かってブローを行いながら、レーザビームを入射させる請求項４または５に記載の複合処理方法。   The composite processing method according to claim 4 or 5, wherein in the step (d), the laser beam is incident while blowing toward the incident position of the laser beam. 前記工程（ｂ）が、
（ｂ１）前記フィルム状基板上に、第１の導電膜を成膜する工程と、
（ｂ２）前記第１の導電膜上に、第１導電型の第１の半導体膜と、前記第１導電型とは逆導電型の第２導電型の第２の半導体膜とを含む半導体膜を形成する工程と、
（ｂ３）前記半導体膜上に、第２の導電膜を成膜する工程と
を含み、
前記工程（ｄ）において、前記半導体膜を露出させるように、前記第２の導電膜を除去する請求項４〜６のいずれか１項に記載の複合処理方法。 The step (b)
(B1) forming a first conductive film on the film substrate;
(B2) A semiconductor film including a first conductivity type first semiconductor film and a second conductivity type second semiconductor film opposite to the first conductivity type on the first conductive film. Forming a step;
(B3) forming a second conductive film on the semiconductor film,
The composite processing method according to claim 4, wherein in the step (d), the second conductive film is removed so as to expose the semiconductor film. 前記工程（ｄ）において、前記第１の導電膜を露出させるように、前記半導体膜を除去する請求項７に記載の複合処理方法。   The composite processing method according to claim 7, wherein in the step (d), the semiconductor film is removed so that the first conductive film is exposed.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010077018A3 (en) * 2008-12-30 2010-10-07 Lg Electronics Inc. Laser firing apparatus for high efficiency solar cell and fabrication method thereof
JP2011045916A (en) * 2009-08-28 2011-03-10 Hitachi High-Technologies Corp Laser processing device, apparatus for manufacturing of solar cell panel, solar cell panel, and laser processing method
CN103492113A (en) * 2011-04-27 2014-01-01 百德福钢带有限公司 Method for butt-welding two strips along the longitudinal edges thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262083A (en) * 1988-04-12 1989-10-18 Toshiba Corp Laser cutting method
JPH01306095A (en) * 1988-06-01 1989-12-11 Nippei Toyama Corp Laser processing device of laser light transmittable material with thin film
JPH10125632A (en) * 1996-10-23 1998-05-15 Mitsubishi Heavy Ind Ltd Method and apparatus for laser etching
JP2001040485A (en) * 1999-07-26 2001-02-13 Sumitomo Heavy Ind Ltd Composite treatment of film substrate and composite treating device
JP2002170772A (en) * 2000-12-04 2002-06-14 Sharp Corp Crystal thin film manufacturing system, method therefor and crystal thin film device
JP2003017431A (en) * 2001-06-28 2003-01-17 Fuji Xerox Co Ltd Annealing device
JP2003096556A (en) * 2001-09-20 2003-04-03 Fuji Xerox Co Ltd Method and apparatus for depositing thin film of crystalline compound on sheet base material
JP2005014083A (en) * 2003-06-30 2005-01-20 Fuji Electric Holdings Co Ltd Laser beam machining device and laser beam machining method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262083A (en) * 1988-04-12 1989-10-18 Toshiba Corp Laser cutting method
JPH01306095A (en) * 1988-06-01 1989-12-11 Nippei Toyama Corp Laser processing device of laser light transmittable material with thin film
JPH10125632A (en) * 1996-10-23 1998-05-15 Mitsubishi Heavy Ind Ltd Method and apparatus for laser etching
JP2001040485A (en) * 1999-07-26 2001-02-13 Sumitomo Heavy Ind Ltd Composite treatment of film substrate and composite treating device
JP2002170772A (en) * 2000-12-04 2002-06-14 Sharp Corp Crystal thin film manufacturing system, method therefor and crystal thin film device
JP2003017431A (en) * 2001-06-28 2003-01-17 Fuji Xerox Co Ltd Annealing device
JP2003096556A (en) * 2001-09-20 2003-04-03 Fuji Xerox Co Ltd Method and apparatus for depositing thin film of crystalline compound on sheet base material
JP2005014083A (en) * 2003-06-30 2005-01-20 Fuji Electric Holdings Co Ltd Laser beam machining device and laser beam machining method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010077018A3 (en) * 2008-12-30 2010-10-07 Lg Electronics Inc. Laser firing apparatus for high efficiency solar cell and fabrication method thereof
KR101000067B1 (en) 2008-12-30 2010-12-10 엘지전자 주식회사 Laser Firing Apparatus For High Efficiency Sollar Cell And Fabrication Method For High Efficiency Sollar Cell
US8778720B2 (en) 2008-12-30 2014-07-15 Lg Electronics Inc. Laser firing apparatus for high efficiency solar cell and fabrication method thereof
JP2011045916A (en) * 2009-08-28 2011-03-10 Hitachi High-Technologies Corp Laser processing device, apparatus for manufacturing of solar cell panel, solar cell panel, and laser processing method
CN103492113A (en) * 2011-04-27 2014-01-01 百德福钢带有限公司 Method for butt-welding two strips along the longitudinal edges thereof
JP2014519983A (en) * 2011-04-27 2014-08-21 ベルンドルフ バント ゲゼルシャフト ミット ベシュレンクテル ハフツング Method for butt welding two belts along a longitudinal edge

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