JP2008114336A - Self-grinding method for chuck table - Google Patents

Self-grinding method for chuck table Download PDF

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Publication number
JP2008114336A
JP2008114336A JP2006300268A JP2006300268A JP2008114336A JP 2008114336 A JP2008114336 A JP 2008114336A JP 2006300268 A JP2006300268 A JP 2006300268A JP 2006300268 A JP2006300268 A JP 2006300268A JP 2008114336 A JP2008114336 A JP 2008114336A
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Prior art keywords
grinding
chuck table
self
grinding wheel
wafer
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JP2006300268A
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Japanese (ja)
Inventor
Keiichi Kajiyama
啓一 梶山
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2006300268A priority Critical patent/JP2008114336A/en
Priority to TW096137058A priority patent/TW200832536A/en
Priority to KR1020070107134A priority patent/KR20080041107A/en
Publication of JP2008114336A publication Critical patent/JP2008114336A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Abstract

<P>PROBLEM TO BE SOLVED: To prevent pieces of copper from invading into the suction surface of a chuck table in self-grinding of the chuck table. <P>SOLUTION: In performing self-grinding in which a grinding means 3 is placed close to the chuck table 2 by a driving means while rotating the chuck table 2 and rotating a grinding wheel 33 and the suction surface of the chuck table 2 is brought into contact with a grinding tool 33b to be ground in order to bring the suction surface 20 into parallelism with the grinding surface of the grinding tool 33b, a grinding tool formed with bonding agent except metal bonding agent is used as the grinding tool 33b. Since the grinding tool 33b does not include any metal, any metal does not invade into the suction surface 20 in self-grinding. Further, any metal does not invade into a wafer from the suction surface 20 in grinding the wafer afterward. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、チャックテーブルの吸着面を研削するセルフグラインディング方法に関するものである。   The present invention relates to a self-grinding method for grinding a suction surface of a chuck table.

ＩＣ、ＬＳＩ等のデバイスが表面に複数形成されたウェーハは、裏面の研削によって所望の厚さに形成された後にダイシングされて個々のデバイスに分割され、各種電子機器に用いられている。   A wafer on which a plurality of devices such as IC and LSI are formed on the front surface is formed into a desired thickness by grinding the back surface, then diced and divided into individual devices, and used in various electronic devices.

しかし、ウェーハの裏面を研削して例えば厚さが１００μｍ以下となるように薄く形成し、裏面を鏡面加工すると、ゲッタリング効果が低下してデバイスの品質を低下させるという問題がある。そこで、ウェーハの裏面を研削してゲッタリング層を形成し、ゲッタリング効果を向上させる技術も提案されている（例えば特許文献１参照）。   However, if the back surface of the wafer is ground and formed to have a thickness of, for example, 100 μm or less, and the back surface is mirror-finished, the gettering effect is reduced and the quality of the device is deteriorated. Therefore, a technique has been proposed in which the gettering layer is formed by grinding the back surface of the wafer to improve the gettering effect (see, for example, Patent Document 1).

特開２００６−４１２５８号公報JP 2006-41258 A

しかし、ウェーハの裏面を研削砥石によって研削すると、重金属が侵入してデバイスの品質が低下するという問題が生じていた。そこで、本発明者がかかる問題の原因を究明したところ、以下の原因が判明した。すなわち、研削装置のチャックテーブルを新たなものに交換したときなどには、ウェーハの研削に先だって、ポーラスセラミックスにより形成されたチャックテーブルの吸着面と研削砥石の研削面とを平行にすべく、吸着面を研削砥石によって研削するセルフグラインディングが行われているが、かかるセルフグラインディングの際には、吸着面の材質との関係で、研削砥石として比較的硬度が高いメタルボンド砥石が使用されているため、メタルボンドの主成分である銅が吸着面に侵入して滞留し、後にウェーハを研削する際に、吸着面において保持されたウェーハの半導体ベース層に銅イオンが侵入していることが原因となっていることが判明した。   However, when the back surface of the wafer is ground with a grinding wheel, there is a problem in that heavy metal enters and the quality of the device is deteriorated. Then, when the present inventor investigated the cause of the problem, the following cause was found. In other words, when the chuck table of the grinding device is replaced with a new one, the chuck table formed of porous ceramics and the grinding surface of the grinding wheel are placed parallel to each other prior to wafer grinding. Self-grinding is performed to grind the surface with a grinding wheel, but in such self-grinding, a metal bond grindstone with relatively high hardness is used as a grinding wheel due to the material of the adsorption surface. Therefore, copper, which is the main component of the metal bond, penetrates and stays on the adsorption surface, and when grinding the wafer later, copper ions have entered the semiconductor base layer of the wafer held on the adsorption surface. It turned out to be the cause.

そこで、本発明が解決しようとする課題は、チャックテーブルのセルフグラインディングにおいて、チャックテーブルの吸着面に銅が侵入しないようにすることである。   Therefore, the problem to be solved by the present invention is to prevent copper from entering the chucking surface of the chuck table in self-grinding of the chuck table.

本発明は、ウェーハを保持する吸着面を有する回転可能なチャックテーブルと、環状に配設された研削砥石を有する研削ホイールが回転可能に支持されて構成される研削手段と、チャックテーブルに対して研削手段を相対的に接近または離反させる駆動手段とから少なくとも構成される研削装置におけるチャックテーブルのセルフグラインディング方法に関するもので、チャックテーブルを回転させると共に研削ホイールを回転させながら、駆動手段によって研削手段をチャックテーブルに接近させてチャックテーブルの吸着面に研削砥石を接触させて研削し、吸着面と研削砥石の研削面とが平行になるようにセルフグラインディングを遂行する際に、研削砥石として、メタルボンド以外のボンド剤で形成される研削砥石を使用することを特徴とする。   The present invention relates to a chuck table having a chucking surface having a suction surface for holding a wafer, a grinding means having a grinding wheel having a grinding wheel arranged in an annular shape rotatably supported, and a chuck table. The present invention relates to a self-grinding method of a chuck table in a grinding apparatus which is at least composed of a driving means for relatively approaching or separating the grinding means, and the grinding means by the driving means while rotating the chuck table and rotating the grinding wheel. When the self-grinding is performed so that the suction surface and the grinding surface of the grinding wheel are parallel, the grinding wheel is brought into contact with the chuck table and the chucking wheel is brought into contact with the chucking surface. The use of a grinding wheel formed with a bond agent other than metal bond To.

研削砥石は、ダイヤモンド砥粒がビトリファイドボンドで焼結されて形成されているものであることが望ましい。また、チャックテーブルの吸着面から水を噴出させながらチャックテーブルの研削を遂行することが望ましい。   The grinding wheel is preferably formed by sintering diamond abrasive grains with vitrified bonds. It is also desirable to perform grinding of the chuck table while jetting water from the chucking surface of the chuck table.

本発明では、セルフグラインディングに用いる研削砥石として、メタルボンド以外のボンド剤で形成され金属が含まれない研削砥石を使用することとしたため、セルフグラインド時にチャックテーブルの吸着面に金属が侵入することがない。したがって、その後のウェーハの裏面の研削時に当該吸着面においてウェーハの表面側を吸着しても、金属が半導体ベース層を介して機能層に侵入することがない。   In the present invention, as the grinding wheel used for self-grinding, a grinding wheel that is formed of a bonding agent other than metal bond and does not contain metal is used. There is no. Therefore, even if the front surface side of the wafer is adsorbed on the adsorption surface during subsequent grinding of the back surface of the wafer, the metal does not enter the functional layer via the semiconductor base layer.

図１に示す研削装置１は、ウェーハＷを保持するチャックテーブル２と、チャックテーブル２に保持されたウェーハＷを研削する研削手段３と、チャックテーブル２に対して研削手段３を相対的に接近または離反させる駆動手段４とを備えている。   A grinding apparatus 1 shown in FIG. 1 includes a chuck table 2 that holds a wafer W, a grinding unit 3 that grinds the wafer W held on the chuck table 2, and the grinding unit 3 relatively close to the chuck table 2. Alternatively, driving means 4 for separating is provided.

チャックテーブル２は、回転可能であると共に、水平方向に移動可能であり、ポーラスセラミックスによって形成された多孔質の吸着面２０が吸引源に連通して構成されており、吸着面２０においてウェーハＷを吸引保持することができる。   The chuck table 2 is rotatable and movable in the horizontal direction, and a porous suction surface 20 formed of porous ceramics is connected to a suction source. It can be sucked and held.

研削手段３は、垂直方向の軸心を有するスピンドル３０と、スピンドル３０を回転可能に支持するスピンドルハウジング３１と、スピンドル３０の先端にホイールマウント３２を介して装着される研削ホイール３３とから構成され、スピンドル３０の回転と共に研削ホイール３３も回転する構成となっている。   The grinding means 3 includes a spindle 30 having a vertical axis, a spindle housing 31 that rotatably supports the spindle 30, and a grinding wheel 33 that is attached to the tip of the spindle 30 via a wheel mount 32. The grinding wheel 33 rotates with the rotation of the spindle 30.

図２に示すように、ホイールマウント３２には、ネジ３４によるネジ止めによって研削ホイール３３が固定される。研削ホイール３３は、リング状の基台３３ａと、基台３３ａの下面に環状に固着された研削砥石３３ｂとから構成され、研削砥石３３ｂの下面（研削面）が、吸着面２０に吸着されたウェーハに接触して研削が行われる。   As shown in FIG. 2, the grinding wheel 33 is fixed to the wheel mount 32 by screwing with a screw 34. The grinding wheel 33 is composed of a ring-shaped base 33 a and a grinding wheel 33 b that is annularly fixed to the lower surface of the base 33 a, and the lower surface (grinding surface) of the grinding wheel 33 b is adsorbed to the adsorption surface 20. Grinding is performed in contact with the wafer.

研削砥石３３ｂは、ダイヤモンド砥粒がビトリファイドボンドで焼結されて形成されており、銅等の金属は含まれていない。なお、ビトリファイドボンドに代えてレジンボンドを使用した研削砥石を用いることもできる。   The grinding wheel 33b is formed by sintering diamond abrasive grains with vitrified bonds, and does not include metals such as copper. In addition, it can replace with a vitrified bond and can also use the grinding wheel using a resin bond.

図１に示すように、駆動手段４は、垂直方向に配設されたボールネジ４０と、ボールネジ４０の一端に連結されたパルスモータ４１と、ボールネジ４０と平行に配設された一対のガイドレール４２と、内部のナット（図示せず）がボールネジ４０に螺合すると共に側部がガイドレール４２に摺接する昇降板４３と、昇降板４３に連結されスピンドルハウジング３１を支持する支持部４４とから構成され、パルスモータ４１に駆動されてボールネジ４０が回動することにより、昇降板４３がガイドレール４２にガイドされて昇降し、これに伴い支持部４４及び研削手段３が昇降する構成となっている。   As shown in FIG. 1, the driving means 4 includes a ball screw 40 arranged in a vertical direction, a pulse motor 41 connected to one end of the ball screw 40, and a pair of guide rails 42 arranged in parallel with the ball screw 40. And an elevating plate 43 whose inner nut (not shown) is screwed into the ball screw 40 and whose side portion is in sliding contact with the guide rail 42, and a support portion 44 that is connected to the elevating plate 43 and supports the spindle housing 31. Then, the ball screw 40 is driven by the pulse motor 41 to rotate, whereby the elevating plate 43 is guided by the guide rail 42 to move up and down, and the support portion 44 and the grinding means 3 are moved up and down accordingly. .

ウェーハを研削するにあたり、その厚さを精密に仕上げるためには、研削砥石３３ａとチャックテーブル２の吸着面２０とが平行になっている必要があるため、チャックテーブル２が破損等して新たなチャックテーブルに交換した際等において、ウェーハの研削に先立ち、吸着面２０の研削（セルフグラインディング）を行う。セルフグラインディングでは、図３に示すように、チャックテーブル２を回転させると共に、駆動手段４によって研削手段３をチャックテーブル２に接近させ、回転する研削ホイール３３の研削砥石３３ｂの下面をチャックテーブル２の吸着面２０に接触させて吸着面２０を研削し、吸着面２０と研削砥石３３ａの下面（研削面）とを平行に整形する。研削砥石３３ｂは、ダイヤモンド砥粒がビトリファイドボンドで焼結されて形成されており、銅等の重金属が含まれないため、吸着面２０に重金属が侵入することがない。   In grinding the wafer, in order to finish the thickness precisely, it is necessary that the grinding wheel 33a and the suction surface 20 of the chuck table 2 be parallel to each other. When the chuck table is replaced, the suction surface 20 is ground (self-grinding) prior to wafer grinding. In the self-grinding, as shown in FIG. 3, the chuck table 2 is rotated and the grinding unit 3 is brought close to the chuck table 2 by the driving unit 4, and the lower surface of the grinding wheel 33 b of the rotating grinding wheel 33 is placed on the chuck table 2. The suction surface 20 is ground in contact with the suction surface 20, and the suction surface 20 and the lower surface (grinding surface) of the grinding wheel 33a are shaped in parallel. The grinding wheel 33b is formed by sintering diamond abrasive grains with vitrified bonds and does not contain heavy metals such as copper, so that heavy metals do not enter the adsorption surface 20.

図３に示すように、吸着面２０がバルブ２１を介して水源２２に連結された構成においては、セルフグラインディングの際に、吸着面２０に目詰まりが生じないように、水源２２から吸着面２０に水を供給し、吸着面２０から水を噴出させる。   As shown in FIG. 3, in the configuration in which the suction surface 20 is connected to the water source 22 via the valve 21, the self-grinding allows the suction surface 20 to be clogged so that the suction surface 20 is not clogged. Water is supplied to 20 and water is ejected from the adsorption surface 20.

セルフグラインディングが終了して吸着面２０と研削砥石３３ｂの研削面とが平行に整形された後は、図４に示すウェーハＷの裏面Ｗ２の研削を行うことができる。ウェーハＷの研削時は、セルフグラインディングに使用した研削砥石３３ｂをそのまま使用することもできるし、他の研削砥石に交換してもよい。   After the self-grinding is finished and the suction surface 20 and the grinding surface of the grinding wheel 33b are shaped in parallel, the back surface W2 of the wafer W shown in FIG. 4 can be ground. When grinding the wafer W, the grinding wheel 33b used for self-grinding can be used as it is, or can be replaced with another grinding wheel.

図４に示すように、ウェーハＷの表面Ｗ１には、ストリートＳに区画されて複数のデバイスＤが形成されている。そして、表面Ｗ１には、デバイスＤを保護するための保護部材５が貼着され、研削時には、裏返して図５に示す状態とする。すなわち、図３に示したチャックテーブル２の吸着面２０において、バルブ２３を介して吸着面２０と連結された吸引源２４から吸引力を作用させて、表面Ｗ１に貼着された保護部材５側を保持する。この状態では、裏面Ｗ２が上側に露出する。そして、チャックテーブル２を回転させると共に、回転する研削砥石３３ｂを裏面Ｗ２に接触させて裏面Ｗ２を研削し、ウェーハＷを所望の厚さに仕上げる。   As shown in FIG. 4, a plurality of devices D are formed on the surface W <b> 1 of the wafer W so as to be partitioned into streets S. And the protection member 5 for protecting the device D is affixed on the surface W1, and it turns over in the state shown in FIG. 5 at the time of grinding. That is, on the suction surface 20 of the chuck table 2 shown in FIG. 3, a suction force is applied from the suction source 24 connected to the suction surface 20 via the valve 23, and the protective member 5 side adhered to the surface W1 side. Hold. In this state, the back surface W2 is exposed upward. Then, while rotating the chuck table 2, the rotating grinding wheel 33b is brought into contact with the back surface W2 to grind the back surface W2, and the wafer W is finished to a desired thickness.

セルフグラインディング時にチャックテーブル２の吸着面２０に重金属が侵入していないため、吸着面２０においてウェーハＷを保持した状態で裏面Ｗ２の研削を行っても、ウェーハＷに重金属が侵入することがない。したがって、ウェーハＷの機能層の品質が低下しない。   Since heavy metal does not enter the chucking surface 20 of the chuck table 2 during self-grinding, heavy metal does not enter the wafer W even if the back surface W2 is ground with the wafer W held on the chucking surface 20. . Therefore, the quality of the functional layer of the wafer W does not deteriorate.

研削装置の一例を示す斜視図である。It is a perspective view which shows an example of a grinding device. スピンドルに対する研削ホイールの装着状態を示す斜視図である。It is a perspective view which shows the mounting state of the grinding wheel with respect to a spindle. 吸着面をセルフグラインディングする状態を示す斜視図である。It is a perspective view which shows the state which self-grinds an adsorption | suction surface. ウェーハ及び保護部材を示す斜視図である。It is a perspective view which shows a wafer and a protection member. 表面に保護部材が貼着されたウェーハを示す斜視図である。It is a perspective view which shows the wafer by which the protection member was stuck on the surface.

符号の説明Explanation of symbols

１：研削装置
２：チャックテーブル
２０：吸着面 ２１：バルブ ２２：水源 ２３：バルブ ２４：吸引源
３：研削手段
３０：スピンドル ３１：スピンドルハウジング ３２：ホイールマウント
３３：研削ホイール
３３ａ：基台 ３３ｂ：研削砥石
４：駆動手段
４０：ボールネジ ４１：パルスモータ ４２：ガイドレール ４３：昇降板
４４：支持部 1: Grinding device 2: Chuck table 20: Suction surface 21: Valve 22: Water source 23: Valve 24: Suction source 3: Grinding means 30: Spindle 31: Spindle housing 32: Wheel mount 33: Grinding wheel 33a: Base 33b: Grinding wheel 4: Driving means 40: Ball screw 41: Pulse motor 42: Guide rail 43: Lift plate 44: Support part

Claims (3)

ウェーハを保持する吸着面を有する回転可能なチャックテーブルと、環状に配設された研削砥石を有する研削ホイールが回転可能に支持されて構成される研削手段と、該チャックテーブルに対して該研削手段を相対的に接近または離反させる駆動手段とから少なくとも構成される研削装置における該チャックテーブルのセルフグラインディング方法であって、
該チャックテーブルを回転させると共に該研削ホイールを回転させながら、該駆動手段によって該研削手段を該チャックテーブルに接近させて該チャックテーブルの吸着面に該研削砥石を接触させて研削し、該吸着面と該研削砥石の研削面とが平行になるようにセルフグラインディングを遂行する際に、該研削砥石として、メタルボンド以外のボンド剤で形成される研削砥石を使用することを特徴とするチャックテーブルのセルフグラインディング方法。 A rotatable chuck table having a suction surface for holding a wafer, a grinding means configured to rotatably support a grinding wheel having a grinding wheel arranged in an annular shape, and the grinding means for the chuck table A self-grinding method for the chuck table in a grinding apparatus comprising at least driving means for relatively approaching or moving apart,
While rotating the chuck table and rotating the grinding wheel, the driving means brings the grinding means closer to the chuck table and brings the grinding wheel into contact with the chucking surface of the chuck table for grinding. A chuck table using a grinding wheel formed of a bonding agent other than a metal bond as the grinding wheel when performing self-grinding so that the grinding surface of the grinding wheel is parallel to the grinding surface Self-grinding method. 前記研削砥石は、ダイヤモンド砥粒がビトリファイドボンドで焼結されて形成されている請求項１に記載のチャックテーブルのセルフグラインディング方法。   The chucking table self-grinding method according to claim 1, wherein the grinding wheel is formed by sintering diamond abrasive grains with vitrified bonds. 前記チャックテーブルの吸着面から水を噴出させながら該チャックテーブルの研削を遂行する請求項１または２に記載のチャックテーブルのセルフグラインディング方法。   The chuck table self-grinding method according to claim 1 or 2, wherein the chuck table is ground while water is ejected from the chucking surface of the chuck table.
JP2006300268A 2006-11-06 2006-11-06 Self-grinding method for chuck table Pending JP2008114336A (en)

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