JP2008108766A - Chuck and spin coating device - Google Patents
Chuck and spin coating device Download PDFInfo
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- JP2008108766A JP2008108766A JP2006287322A JP2006287322A JP2008108766A JP 2008108766 A JP2008108766 A JP 2008108766A JP 2006287322 A JP2006287322 A JP 2006287322A JP 2006287322 A JP2006287322 A JP 2006287322A JP 2008108766 A JP2008108766 A JP 2008108766A
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Abstract
Description
本発明は、基板を固定するためのチャックに関するものであり、特に、スピンコータ装置に設置されているチャックに関する。 The present invention relates to a chuck for fixing a substrate, and more particularly to a chuck installed in a spin coater apparatus.
チャックとは、一般的に基板を密着させる為の治具のことを指し、密着させる方法としては基板の裏面を真空吸着させたり、基板を機械的に押さえ付けたりと多様な種類が存在する。 The chuck generally refers to a jig for bringing the substrate into close contact, and there are various types of methods for making the contact, such as vacuum suction of the back surface of the substrate or mechanical pressing of the substrate.
チャックは主に機械加工装置や製造装置に搭載され、半導体マスクや半導体素子製造等、半導体製造分野では、スピンコータ装置に基板裏面を真空吸着するチャックが用いられることが多い。以下、一般的なスピンコータ装置に用いるチャックについて説明を行う。 The chuck is mainly mounted on a machining apparatus or a manufacturing apparatus. In the semiconductor manufacturing field such as semiconductor mask and semiconductor element manufacturing, a chuck that vacuum-sucks the back surface of a substrate is often used for a spin coater. Hereinafter, a chuck used in a general spin coater will be described.
スピンコータ装置において、チャックは、回転軸の上端に取り付けられており、回転軸はモーターで回転駆動されるようになっている。前記回転軸およびこの回転軸が連結される前記チャックの中心軸部は中空状態になっており、中心軸部の中空部は、チャック表面に開口している。このため、この中心軸部および回転軸の中空部を介して真空排気することにより、チャック上に基板を真空吸着固定できるようになっている（特許文献１参照）。 In the spin coater device, the chuck is attached to the upper end of the rotating shaft, and the rotating shaft is driven to rotate by a motor. The rotating shaft and the central shaft portion of the chuck to which the rotating shaft is connected are in a hollow state, and the hollow portion of the central shaft portion is open to the chuck surface. For this reason, the substrate can be sucked and fixed on the chuck by vacuum evacuation through the central shaft portion and the hollow portion of the rotating shaft (see Patent Document 1).
上記のように構成されたスピンコータ装置を用いて、基板に対するレジスト塗布を行う場合は、まず基板をチャック上に配置し、チャックの中心軸部および回転軸の中空部を介して真空排気することにより前記基板をチャック上に真空吸着固定し、真空吸着固定した基板上にレジストを滴下し、モーターを動作させることにより回転軸およびチャックと一体に基板を回転させ、遠心力により前記レジストを基板上の全面に塗布する。 When applying the resist to the substrate using the spin coater configured as described above, the substrate is first placed on the chuck and then evacuated through the central shaft portion of the chuck and the hollow portion of the rotating shaft. The substrate is vacuum-fixed and fixed on the chuck, a resist is dropped onto the vacuum-fixed substrate, and the motor is operated to rotate the substrate integrally with the rotating shaft and the chuck, and the resist is placed on the substrate by centrifugal force. Apply to the entire surface.
スピンコート法によるレジスト塗布においては、レジスト粘度及び回転数によってレジストの膜厚を決定するが、使用する基板表面の材質やレジスト粘度の違い等によって、当然のことながらレジストの塗り広がりやすさに違いが出る。 In resist coating by spin coating, the resist film thickness is determined by the resist viscosity and the number of revolutions. Of course, depending on the material of the substrate surface used and the resist viscosity, etc. coming out.
レジストの塗り広がりが悪いと、塗布後に基板端面までレジストが達していない欠陥の状態をしばしば確認できる。このため、レジストの滴下量を増加させ、基板の大半をレジストで覆った状態から回転によってレジストを振り切ることが行われている。
しかしながら、基板の大半をレジストで覆った状態から回転によってレジストを振り切る場合、滴下直後の基板の端面付近レジストが、回転時に外側へ飛び出す速度を得ることができず、基板裏面まで垂れて、基板裏面の広範囲に付着してしまうという問題がある。
基板裏面に付着したレジストは、溶剤を用いて除去しようとしても完全に除去することが出来ず、また、溶剤自体による基板裏面の汚染が懸念される。
However, when the resist is shaken off by rotation from the state where most of the substrate is covered with the resist, the resist near the end face of the substrate immediately after dropping cannot get the speed to jump out to the outside at the time of rotation. There is a problem that it adheres to a wide area.
The resist adhering to the back surface of the substrate cannot be completely removed even if an attempt is made to remove it using a solvent, and contamination of the back surface of the substrate due to the solvent itself is a concern.
特に、電子線透過型マスクを製造する場合、この問題は顕著となる。電子線透過型マスクはメンブレン構造であり、工程上基板裏面からのエッチングが必要となる。汚染状態の基板裏面をエッチングしたとき、汚染箇所がエッチングにおけるマスクとして作用してしまうため、エッチング後の開口部に残渣が発生してしまい、側壁のラフネスに悪影響を及ぼすのみならず、製品の重大な欠陥につながる要因となる。 In particular, when manufacturing an electron beam transmission type mask, this problem becomes remarkable. The electron beam transmission mask has a membrane structure, and etching from the back surface of the substrate is necessary in the process. When the contaminated substrate back side is etched, the contaminated part acts as a mask in etching, so that a residue is generated in the opening after etching, which not only adversely affects the roughness of the side wall but also seriously affects the product. It becomes a factor that leads to a flaw.
そこで、本発明は、上述した問題を解決するためになされたものであり、基板裏面のレジスト付着による汚染を低減できるチャックを提供することを目的とする。 Accordingly, the present invention has been made to solve the above-described problems, and an object thereof is to provide a chuck that can reduce contamination due to resist adhesion on the back surface of a substrate.
請求項１に記載の本発明は、基板と接触する接触面内周側および接触面外周側と、前記接触面内周側と前記接触面外周側に囲われた吸引部と、前記吸引部に接続し、吸引部を減圧するバキュームと、を備え、接触面外周側よりも外周部に凸型非接触面を設けたことを特徴とするチャックである。
The present invention according to
請求項２に記載の本発明は、請求項１に記載のチャックであって、凸型非接触面と基板とのギャップ長が２．０ｍｍ以下であることを特徴とするチャックである。 A second aspect of the present invention is the chuck according to the first aspect, wherein the gap length between the convex non-contact surface and the substrate is 2.0 mm or less.
請求項３に記載の本発明は、請求項１または２のいずれかに記載のチャックを備えたことを特徴とするスピンコータ装置である。 According to a third aspect of the present invention, there is provided a spin coater device comprising the chuck according to the first or second aspect.
本発明のチャックは、接触面外周側よりも外周部に凸型非接触面を設けたことを特徴とする。
基板裏面と凸型非接触面との毛細管レベルのギャップにより、表面張力によって塗布物質がギャップ間に留まり、凸型非接触面より内周側に塗布物質が進入することを防ぐことが出来る。このため、基板裏面の塗布物質による汚染を最小限にするという効果を奏する。
The chuck of the present invention is characterized in that a convex non-contact surface is provided on the outer peripheral portion rather than the outer peripheral side of the contact surface.
Due to the capillary level gap between the back surface of the substrate and the convex non-contact surface, the coating material stays between the gaps due to surface tension, and the coating material can be prevented from entering the inner peripheral side from the convex non-contact surface. For this reason, there exists an effect of minimizing the contamination by the coating substance on the back surface of the substrate.
基板の汚染を最小限に留めることで、例えば、半導体製造工程におけるレジストコートプロセスの歩留まり向上に寄与し、また、搬送ロボットをはじめとした各種装置への汚染防止効果も期待できる。また、半導体製造工程において塗布されるレジストは、疎水性の液体であり、親水性のシリコン基板裏面部と凸型非接触面とで構成されるギャップへ入り込むとき、よりギャップ間に留まることになる。 By minimizing the contamination of the substrate, for example, it contributes to the improvement of the yield of the resist coating process in the semiconductor manufacturing process, and the effect of preventing the contamination of various devices such as a transfer robot can be expected. Moreover, the resist applied in the semiconductor manufacturing process is a hydrophobic liquid, and when entering the gap formed by the hydrophilic silicon substrate back surface portion and the convex non-contact surface, the resist stays between the gaps more. .
また、本発明のチャックは、凸型非接触面と基板とのギャップ長が２．０ｍｍ以下であることが好ましい。
ギャップ長が２．０ｍｍより長すぎると、表面張力を効果的に得ることができず、基板裏面の汚染を防止することが困難となる。
In the chuck of the present invention, the gap length between the convex non-contact surface and the substrate is preferably 2.0 mm or less.
If the gap length is longer than 2.0 mm, the surface tension cannot be effectively obtained, and it becomes difficult to prevent contamination of the back surface of the substrate.
以下、本発明のチャックの一例について説明を行う。
本発明のチャックは、
基板と接触する接触面内周側および接触面外周側と、
前記接触面内周側と前記接触面外周側に囲われた吸引部と、
前記吸引部に接続し、吸引部を減圧するバキュームと、を備え、
接触面外周側よりも外周部に凸型非接触面を設けたこと
を特徴とする。
Hereinafter, an example of the chuck of the present invention will be described.
The chuck of the present invention is
A contact surface inner periphery side and a contact surface outer periphery side in contact with the substrate;
A suction part surrounded by the contact surface inner periphery side and the contact surface outer periphery side;
A vacuum connected to the suction part and depressurizing the suction part,
A convex non-contact surface is provided in the outer peripheral portion rather than the outer peripheral side of the contact surface.
チャックの材料としては、基板と接触する接触面を平坦に加工することのできるものであれば良い。例えば、具体的にはアルミを用いても良い。
アルミを用いた場合、表面をアルマイト処理することにより溶剤の耐性を向上することが出来る。
Any material can be used for the chuck as long as the contact surface that contacts the substrate can be processed flat. For example, aluminum may be used specifically.
When aluminum is used, the resistance of the solvent can be improved by anodizing the surface.
バキュームは、前記接触面内周側と前記接触面外周側に囲われた吸引部を減圧し、基板と接触面を圧着するために設けられる。バキュームとしては、適宜公知の吸引装置を用いることが出来る。 The vacuum is provided in order to depressurize the suction part surrounded by the inner peripheral side of the contact surface and the outer peripheral side of the contact surface and press the substrate and the contact surface. As the vacuum, a known suction device can be used as appropriate.
凸型非接触面は、接触面外周側よりも外周部に設けられる。チャックの基体よりも基板側に凸状にせりだした形状であり、かつ基板と非接触である。凸型非接触面を設けることにより、基板裏面と凸型非接触面との毛細管レベルのギャップに、表面張力によってレジストなどの塗布物質が前記ギャップ間に留まり、凸型非接触面より先に塗布物質が進入することを防ぐことが出来る。 A convex non-contact surface is provided in an outer peripheral part rather than a contact surface outer peripheral side. It has a shape protruding from the chuck substrate toward the substrate side and is not in contact with the substrate. By providing a convex non-contact surface, a coating material such as resist remains between the gaps due to surface tension in the capillary level gap between the back surface of the substrate and the convex non-contact surface, and is applied before the convex non-contact surface. The substance can be prevented from entering.
また、凸型非接触面はチャックの最外周部に設けられることが好ましい。最外周部に設けることで、塗布物質により基板裏面の汚染を最小限にすることが出来る。例えば、４インチ基板に塗布を行う場合は中心から５０ｍｍ、８インチ基板に塗布を行う場合は中心から１００ｍｍなど、基板の径に応じて設置部位を変更することが望ましい。 The convex non-contact surface is preferably provided on the outermost peripheral portion of the chuck. By providing the outermost peripheral portion, contamination of the back surface of the substrate due to the coating substance can be minimized. For example, it is desirable to change the installation site according to the diameter of the substrate, such as 50 mm from the center when applying to a 4-inch substrate and 100 mm from the center when applying to an 8-inch substrate.
また、凸型非接触面と基板裏面とのギャップ長が凸型非接触面と基板とのギャップ長が２．０ｍｍ以下であることが好ましい。
ギャップ長が２．０ｍｍより長すぎると、表面張力を効果的に得ることができず、基板裏面の汚染を防止することが困難となる。
The gap length between the convex non-contact surface and the back surface of the substrate is preferably 2.0 mm or less.
If the gap length is longer than 2.0 mm, the surface tension cannot be effectively obtained, and it becomes difficult to prevent contamination of the back surface of the substrate.
また、凸型非接触面は親水性を示すように表面加工されることが好ましい。凸型非接触面が親水性を示すことにより、塗布物質が疎水性の時、より凸型非接触面と基板裏面とのギャップ間に塗布物質を留めることが出来る。 In addition, the convex non-contact surface is preferably surface-treated so as to exhibit hydrophilicity. Since the convex non-contact surface exhibits hydrophilicity, when the coating material is hydrophobic, the coating material can be further retained between the convex non-contact surface and the back surface of the substrate.
また、凸型非接触面の横幅は、より小さい方が汚染箇所を制限できるため望ましい。 Further, it is desirable that the lateral width of the convex non-contact surface is smaller because the contaminated portion can be restricted.
＜実施例１＞
図１に示すチャック（凸型非接触面と基板とのギャップ長：０．８ｍｍ、凸型非接触面の幅：１ｍｍ）を用いて基板（４インチシリコン基板）を固定し、スピンコート法により、前記基板上にレジスト（富士フィルムエレクトロニクスマテリアルズ製、商品名：ＦＥＰ−１７１、粘度：６ｃＰ）を塗布した。
<Example 1>
The substrate (4-inch silicon substrate) is fixed using the chuck (gap length between the convex non-contact surface and the substrate: 0.8 mm, the width of the convex non-contact surface: 1 mm) shown in FIG. A resist (manufactured by Fuji Film Electronics Materials, trade name: FEP-171, viscosity: 6 cP) was applied on the substrate.
まず、チャックを用いて基板を固定し、基板上にレジストを定量（４ｃｃ）滴下した。定量滴下する方法としては、ディスペンサーに接続したシリンジ内にレジストを充填し、窒素を設定した圧力と時間で吐出させる窒素圧送法（窒素圧力：２０ｐｓｉ、吐出時間：４秒）を用いた。これにより、基板のほぼ全域がレジストによって覆われた。 First, the substrate was fixed using a chuck, and a predetermined amount (4 cc) of resist was dropped onto the substrate. As a method of performing a constant drop, a nitrogen pumping method (nitrogen pressure: 20 psi, discharge time: 4 seconds) in which a syringe was filled with a resist and discharged at a set pressure and time was used. As a result, almost the entire area of the substrate was covered with the resist.
次に、チャックと基板を７００ｒｐｍにて回転させ、レジストを基板に均一に塗布した。回転後、基板上のレジストの膜厚は、１．１０μｍであった。 Next, the chuck and the substrate were rotated at 700 rpm to uniformly apply the resist to the substrate. After rotation, the film thickness of the resist on the substrate was 1.10 μm.
次に、基板をチャックから外し、基板裏面を観察した所、汚染は凸型非接触面に対応する基板最外周部の付着のみであることが確認できた。 Next, when the substrate was removed from the chuck and the back surface of the substrate was observed, it was confirmed that the contamination was only the adhesion of the outermost peripheral portion of the substrate corresponding to the convex non-contact surface.
＜比較例１＞
実施例１と同様に、チャックで基板を固定し、レジストを均一に塗布した。ただし、用いるチャックを図２に示す凸型非接触面を設けていないチャックとした。
<Comparative Example 1>
As in Example 1, the substrate was fixed with a chuck, and the resist was uniformly applied. However, the chuck used was a chuck not provided with the convex non-contact surface shown in FIG.
レジストを塗布後、基板をチャックから外し、基板裏面を観察した所、基板裏面へ広範囲のレジスト付着が確認できた。 After applying the resist, the substrate was removed from the chuck, and when the back surface of the substrate was observed, a wide range of resist adhesion was confirmed on the back surface of the substrate.
＜比較例２＞
実施例１と同様に、チャックで基板を固定し、レジストを均一に塗布した。ただし、用いるチャックをチャック（凸型非接触面と基板とのギャップ長：２．０ｍｍ、凸型非接触面の幅：１ｍｍ）とした。
<Comparative example 2>
As in Example 1, the substrate was fixed with a chuck, and the resist was uniformly applied. However, the chuck used was a chuck (gap length between the convex non-contact surface and the substrate: 2.0 mm, width of the convex non-contact surface: 1 mm).
基板をチャックから外し、基板裏面を観察した所、汚染は凸型非接触面に対応する部位のよりも内周側にまで広がっていることが確認できた。 When the substrate was removed from the chuck and the back surface of the substrate was observed, it was confirmed that the contamination spread to the inner peripheral side rather than the portion corresponding to the convex non-contact surface.
本発明のチャックは、例えば半導体マスクや半導体素子の製造工程において、半導体ウェハ上に、フォトリソグラフィ用、電子線リソグラフィ用のレジストを塗布するレジスト塗布装置に好適に用いることが期待出来る。 The chuck of the present invention can be expected to be suitably used in a resist coating apparatus that coats a resist for photolithography or electron beam lithography on a semiconductor wafer, for example, in a manufacturing process of a semiconductor mask or a semiconductor element.
１……バキューム
２……基板
３……接触面内周側
４……接触面外周側
５……吸引部
６……凸型非接触面
DESCRIPTION OF
Claims (3)
前記接触面内周側と前記接触面外周側に囲われた吸引部と、
前記吸引部に接続し、吸引部を減圧するバキュームと、を備え、
接触面外周側よりも外周部に凸型非接触面を設けたこと
を特徴とするチャック。 A contact surface inner periphery side and a contact surface outer periphery side in contact with the substrate;
A suction part surrounded by the contact surface inner periphery side and the contact surface outer periphery side;
A vacuum connected to the suction part and depressurizing the suction part,
A chuck characterized in that a convex non-contact surface is provided in the outer peripheral portion rather than the outer peripheral side of the contact surface.
凸型非接触面と基板とのギャップ長が２．０ｍｍ以下であること
を特徴とするチャック。 The chuck according to claim 1,
A chuck characterized in that a gap length between the convex non-contact surface and the substrate is 2.0 mm or less.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009140153A2 (en) * | 2008-05-15 | 2009-11-19 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
| DE102008037364A1 (en) * | 2008-08-12 | 2010-03-04 | Suss Microtec Lithography Gmbh | Device for treating surface of disk-shaped substrate by application and hydro-extracting of treatment liquid and for wet-chemical treatment of wafer during semiconductor manufacturing, has substrate carrier turned around carrier surface |
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| JP2004228453A (en) * | 2003-01-27 | 2004-08-12 | Renesas Technology Corp | Method of manufacturing semiconductor device |
| JP2004274028A (en) * | 2003-02-20 | 2004-09-30 | Tokyo Ohka Kogyo Co Ltd | Device and method for development |
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| WO2009140153A2 (en) * | 2008-05-15 | 2009-11-19 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
| WO2009140153A3 (en) * | 2008-05-15 | 2010-04-01 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
| US8333842B2 (en) | 2008-05-15 | 2012-12-18 | Applied Materials, Inc. | Apparatus for etching semiconductor wafers |
| DE102008037364A1 (en) * | 2008-08-12 | 2010-03-04 | Suss Microtec Lithography Gmbh | Device for treating surface of disk-shaped substrate by application and hydro-extracting of treatment liquid and for wet-chemical treatment of wafer during semiconductor manufacturing, has substrate carrier turned around carrier surface |
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