JP2008100863A - Silicon carbide nanostructure and its producing method - Google Patents

Silicon carbide nanostructure and its producing method Download PDF

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JP2008100863A
JP2008100863A JP2006283224A JP2006283224A JP2008100863A JP 2008100863 A JP2008100863 A JP 2008100863A JP 2006283224 A JP2006283224 A JP 2006283224A JP 2006283224 A JP2006283224 A JP 2006283224A JP 2008100863 A JP2008100863 A JP 2008100863A
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silicon carbide
nanostructure
silicon
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JP5120797B2 (en
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Yoshio Bando
義雄 板東
Guozhen Shen
シェン グォツェン
Golberg Demitry
ゴルバーグ デミトリー
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National Institute for Materials Science
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a silicon carbide nanostructure having a combined shape and a method for producing the silicon carbide nanostructure. <P>SOLUTION: The silicon carbide nanostructure has plate-like crystals consisting of silicon carbide grown epitaxially and perpendicularly to the side face of a silicon carbide nanowire from the side face of the silicon carbide nanowire. The method for producing the silicon carbide nanostructure comprises a step of heating a mixture of silicon monoxide powder, graphite powder and gallium oxide powder in a current of an inert gas at 13×10<SP>2</SP>to 14×10<SP>2</SP>°C for 0.3-1.2 hours. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、炭化ケイ素ナノ構造物とその製造方法に関し、より詳しくは、炭化ケイ素ナノワイヤーに炭化ケイ素の結晶を成長させたナノ構造物とその製造方法に関する。   The present invention relates to a silicon carbide nanostructure and a method for producing the same, and more particularly to a nanostructure obtained by growing a silicon carbide crystal on a silicon carbide nanowire and a method for producing the nanostructure.

炭化ケイ素は、３００Ｋにおいて２．３０ｅＶの広いバンドギャップエネルギーを有し、硬くて熱伝導率の高い物質である（例えば、非特許文献１参照。）。それに加えて、その線状物質は、優れた電界電子放出特性を示し、電子デバイスの製造にとって不可欠の材料である（たとえば、非特許文献２参照。）。今までに、炭化ケイ素の機能性ナノ構造物として、ナノワイヤー、ナノチューブ、ナノボックス、中空のナノ粒子、ナノケーブルなどが製造されている（たとえば、非特許文献３〜１０参照。）。   Silicon carbide has a wide band gap energy of 2.30 eV at 300 K, and is a hard material with high thermal conductivity (see, for example, Non-Patent Document 1). In addition, the linear substance exhibits excellent field electron emission characteristics and is an indispensable material for manufacturing electronic devices (see, for example, Non-Patent Document 2). To date, nanowires, nanotubes, nanoboxes, hollow nanoparticles, nanocables, and the like have been manufactured as functional nanostructures of silicon carbide (see, for example, Non-Patent Documents 3 to 10).

「Ｈ．Ｍｏｒｋｏｃ、ほか、Ｊ．Ａｐｐｌ．Ｐｈｙｓ．７６巻、１３６３頁、１９９４年」"H. Morkoc, et al., J. Appl. Phys. 76, 1363, 1994" 「Ｘ．Ｔ．Ｚｈｏｕ、ほか、Ｃｈｅｍ．Ｐｈｙｓ．Ｌｅｔｔ．３１８巻、５８頁、２０００年」"XT Zhou, et al., Chem. Phys. Lett. 318, 58, 2000" 「Ｈ．Ｊ．Ｄａｉ、ほか、Ｎａｔｕｒｅ ３７５巻、７６９頁、１９９５年」“H. J. Dai, et al., Nature 375, 769, 1995” 「Ｚ．Ｗ．Ｐａｎ、ほか、Ａｄｖ．Ｍａｔｅｒ．１２巻、１１８６頁、２０００年」"ZW Pan, et al., Adv. Mater. 12, 1186, 2000" 「Ｘ．Ｈ．Ｓｕｎ、ほか、Ｊ．Ａｍ．Ｃｈｅｍ．Ｓｏｃ．１２４巻、１４４６４頁、２００２年」"XH Sun, et al., J. Am. Chem. Soc. 124, 14464, 2002" 「Ｙ．Ｂ．Ｌｉ、ほか、Ａｄｖ．Ｍａｔｅｒ．１７巻、５４５頁、２００５年」"YB Li, et al., Adv. Mater. 17, 545, 2005" 「Ｙ．Ｂ．Ｌｉ、ほか、Ａｄｖ．Ｍａｔｅｒ．１６巻、９３頁、２００４年」“YB Li, et al., Adv. Mater. 16, p. 93, 2004” 「Ｇ．Ｚ．Ｓｈｅｎ、ほか、Ｃｈｅｍ．Ｐｈｙｓ．Ｌｅｔｔ．３７５巻、１７７頁、２００３年」“GZ Shen, et al., Chem. Phys. Lett. 375, 177, 2003” 「Ｃ．Ｈ．Ｗａｎｇ、ほか、Ａｄｖ．Ｍａｔｅｒ．１７巻、４１９頁、２００５年」“C. H. Wang, et al., Adv. Mater. 17, 419, 2005” 「Ｃ．Ｃ．Ｔａｎｇ、ほか、Ａｄｖ．Ｍａｔｅｒ．１４巻、１０４６頁、２００２年」“C.C. Tang, et al., Adv. Mater. 14, 1046, 2002”

上述のように、炭化ケイ素ナノ構造物としては、ナノワイヤーなどの単一形態を有する構造物は知られているが、これのみでは、多様な用途を充足することはできず、これらの形態の複合化した構造物が切望されていた。本発明は、形態が複合化した炭化ケイ素ナノ構造物並びにその製造方法を提供することを課題としている。   As described above, as silicon carbide nanostructures, structures having a single form such as nanowires are known, but this alone cannot satisfy various applications. A complex structure was eagerly desired. An object of the present invention is to provide a silicon carbide nanostructure having a composite form and a method for producing the same.

本発明は、上記の課題を解決するものとして、まず第１には、炭化ケイ素ナノワイヤーの側面から、その側面に対し直角にエピタキシャル成長した炭化ケイ素からなる板状結晶を有することを特徴とする炭化ケイ素のナノ構造物を提供する。
第２には、発明１の炭化ケイ素のナノ構造物において、炭化ケイ素ナノワイヤーの長さ方向をＸ軸とし、これに直交する方向をＹ軸とし、ＸＹ両軸に直交する方向をＺ軸とした場合、炭化ケイ素ナノワイヤーの側面からＹ軸方向に成長している炭化ケイ素の結晶のＹ軸方向での寸法が５０〜７０ｎｍ、この結晶のＸ軸方向での寸法が５〜１０ｎｍであることを特徴とする。
第３には、前記発明１又は２の炭化ケイ素ナノ構造物の製造方法であって、一酸化ケイ素粉末、グラファイト粉末及び酸化ガリウム粉末の混合物を不活性ガスを流しながら、１３×１０２〜１４×１０２℃にて０．３〜１．２時間加熱することを特徴とする。
さらに、本発明の第４の製造方法は、前記発明３において、一酸化ケイ素粉末とグラファイト粉末の配合は、重量比で７：１〜３：１の範囲とすることを特徴とし、第５の製造方法は、前記発明３又は４において、酸化ガリウム粉末の重量が一酸化ケイ素粉末１００重量部に対して、３〜７重量部の範囲であることを特徴とする。
第６の製造方法は、前記発明３から5のいずれかにおいて、不活性ガスとして、アルゴンガスを使用することを特徴とする。 In order to solve the above-mentioned problems, the present invention firstly has a plate-like crystal composed of silicon carbide epitaxially grown perpendicularly to the side surface from the side surface of the silicon carbide nanowire. Silicon nanostructures are provided.
Second, in the silicon carbide nanostructure of the invention 1, the length direction of the silicon carbide nanowire is the X axis, the direction orthogonal to the X axis is the Y axis, and the direction orthogonal to both the XY axes is the Z axis. In this case, the silicon carbide crystal grown in the Y-axis direction from the side surface of the silicon carbide nanowire has a dimension in the Y-axis direction of 50 to 70 nm, and the crystal has a dimension in the X-axis direction of 5 to 10 nm. It is characterized by.
Third, the method for producing a silicon carbide nanostructure according to the first or second aspect of the invention, wherein an inert gas is passed through a mixture of silicon monoxide powder, graphite powder, and gallium oxide powder, and 13 × 10 2 to 14 Heating is performed at × 10 2 ° C for 0.3 to 1.2 hours.
Furthermore, the fourth production method of the present invention is characterized in that, in the above-mentioned invention 3, the combination of the silicon monoxide powder and the graphite powder is in a range of 7: 1 to 3: 1 by weight. In the invention 3 or 4, the production method is characterized in that the weight of the gallium oxide powder is in the range of 3 to 7 parts by weight with respect to 100 parts by weight of the silicon monoxide powder.
A sixth production method is characterized in that, in any one of the inventions 3 to 5, argon gas is used as the inert gas.

上記の通り本発明により、炭化ケイ素ナノワイヤーの側面から直角にエピタキシャル成長した炭化ケイ素からなる板状結晶を有する炭化ケイ素ナノ構造物が初めて実現される。また、本発明の方法により、該炭化ケイ素ナノ構造物を簡易なプロセスで容易に製造することが出来る。   As described above, according to the present invention, a silicon carbide nanostructure having a plate crystal made of silicon carbide epitaxially grown at right angles from the side surface of the silicon carbide nanowire is realized for the first time. In addition, the silicon carbide nanostructure can be easily produced by a simple process by the method of the present invention.

本発明は、上記の通りの特徴を持つものであるが、以下にその実施の形態について説明する。
炭化ケイ素ナノワイヤーの長さ方向をＸ軸とし、これから伸長した結晶の伸長方向をＹ軸とし、この両軸に対し共に直角な方向をＺ軸として以下説明する。
炭化ケイ素ナノワイヤーの長さ（Ｘ軸方向）が数十μｍであり、炭化ケイ素ナノワイヤーの側面から直角に成長している結晶の長さ（Ｙ軸方向）が５０〜７０ｎｍ、厚さ（Ｘ軸方向）が５〜１０ｎｍである。
このような炭化ケイ素のナノ構造物は、次のようにして製造することが出来る。
一酸化ケイ素粉末、グラファイト粉末及び酸化ガリウム粉末の混合物をグラファイト製容器に入れる。
この容器を加熱炉の中に取り付けて、加熱炉内を減圧にした後、不活性ガスを流しながら、１３×１０2〜１４×１０２℃に、０．３〜１．２時間加熱する。このようにして炭化ケイ素ナノワイヤーの側面から直角にエピタキシャル成長した炭化ケイ素の組成からなる結晶を有する炭化ケイ素ナノ構造物が得られる。
このとき用いられる加熱装置としては、縦型の高周波誘導加熱炉等が推奨される。この装置は、石英管の外側に誘導加熱コイルが設けてあり、石英管の中には、断熱材の炭素繊維で覆われたグラファイトサセプターが取り付けられている。前記石英管の上部と下部に１ケずつガス導入口があり、ガス排出口は石英管の下部に１箇所存在するものである。この装置については、特開２０００−１０９３０６やＡｐｐｌ．Ｐｈｙｓ．Ａ７５巻、６８１〜６８５頁、２００２年などに記載され公知のものであるから、詳しい説明は省略する。
本発明の炭化ケイ素ナノ構造物の製造の際に用いる不活性ガスとしては、主にアルゴンガスが使用され、その流量は、上部導入口から１００〜３００ｓｃｃｍの範囲で搬送されることが好ましい。３００ｓｃｃｍよりも流量が多いと、生成物が逸散して収量が低下する。
また、逆に１００ｓｃｃｍよりも流量が少ないと大きな粒子が生成する。
アルゴンガスの下部導入口からの流量は１５０〜２５０ｓｃｃｍの範囲が好ましく、２５０ｓｃｃｍよりも流量が多いと生成物が逸散して収量が低下する。１５０ｓｃｃｍよりも流量が少ないと、大きな粒子径の粉末が容器の中に残存する。
一酸化ケイ素粉末とグラファイト粉末の重量比は７：１〜３：１の範囲が好ましく、この範囲よりも一酸化ケイ素粉末の重量が多いと珪素のナノワイヤーが生成する。逆に、この範囲よりも一酸化ケイ素粉末の重量が少ないと多量のグラファイト粉末が残存する。
酸化ガリウム粉末の重量は、一酸化ケイ素粉末１００重量部に対し、３〜７重量部の範囲が好ましく、酸化ガリウム粉末が７重量部よりも多いと生成物中に酸化ガリウムが残存する。逆に、３重量部よりも少ないとケイ素ナノワイヤーが生成する。
加熱温度としては、上述の１３ｘ１０2〜１４ｘ１０2℃の範囲が好ましく、１４ｘ102℃よりも加熱温度が高いと炭化ケイ素ナノワイヤーの直径が太くなる。１３ｘ１０2℃よりも加熱温度が低いと本発明の炭化ケイ素ナノ構造物の収量が著しく低下する。
加熱時間は０．３〜１．２時間の範囲が好ましく、１．２時間で十分に炭化ケイ素ナノ構造物が得られるので、これ以上の時間をかける必要はない。０．３時間よりも加熱時間が短いと原料の一部が未反応のまま残存する。
上記の操作を施すことにより、炭化ケイ素ナノワイヤーの側面から直角にエピタキシャル成長した炭化ケイ素からなる板状結晶を有する炭化ケイ素ナノ構造物が得られる。 The present invention has the features as described above, and an embodiment thereof will be described below.
The length direction of the silicon carbide nanowire is defined as the X axis, the elongation direction of the crystal elongated therefrom is defined as the Y axis, and the direction perpendicular to both axes is defined as the Z axis.
The length (X-axis direction) of the silicon carbide nanowire is several tens of μm, the length of the crystal growing at right angles from the side surface of the silicon carbide nanowire (Y-axis direction) is 50 to 70 nm, and the thickness (X (Axial direction) is 5 to 10 nm.
Such silicon carbide nanostructures can be manufactured as follows.
A mixture of silicon monoxide powder, graphite powder and gallium oxide powder is placed in a graphite container.
This container is attached in a heating furnace, and the inside of the heating furnace is decompressed, and then heated to 13 × 10 2 to 14 × 10 2 ° C. for 0.3 to 1.2 hours while flowing an inert gas. Thus, a silicon carbide nanostructure having a crystal composed of a silicon carbide composition epitaxially grown at right angles from the side surface of the silicon carbide nanowire is obtained.
As a heating device used at this time, a vertical high-frequency induction heating furnace or the like is recommended. In this apparatus, an induction heating coil is provided outside the quartz tube, and a graphite susceptor covered with a carbon fiber as a heat insulating material is attached to the quartz tube. One gas inlet is provided at each of the upper and lower portions of the quartz tube, and one gas outlet is provided at the lower portion of the quartz tube. For this apparatus, Japanese Patent Laid-Open No. 2000-109306 and Appl. Phys. A75, pages 681-685, 2002, etc. are well known and will not be described in detail.
As the inert gas used in the production of the silicon carbide nanostructure of the present invention, argon gas is mainly used, and the flow rate is preferably conveyed in the range of 100 to 300 sccm from the upper inlet. When the flow rate is higher than 300 sccm, the product dissipates and the yield decreases.
Conversely, if the flow rate is less than 100 sccm, large particles are generated.
The flow rate of argon gas from the lower inlet is preferably in the range of 150 to 250 sccm. If the flow rate is higher than 250 sccm, the product is dissipated and the yield is reduced. When the flow rate is less than 150 sccm, a powder having a large particle size remains in the container.
The weight ratio of the silicon monoxide powder to the graphite powder is preferably in the range of 7: 1 to 3: 1. If the weight of the silicon monoxide powder is larger than this range, silicon nanowires are generated. Conversely, if the weight of the silicon monoxide powder is less than this range, a large amount of graphite powder remains.
The weight of the gallium oxide powder is preferably in the range of 3 to 7 parts by weight with respect to 100 parts by weight of the silicon monoxide powder. If the gallium oxide powder is more than 7 parts by weight, the gallium oxide remains in the product. Conversely, if the amount is less than 3 parts by weight, silicon nanowires are produced.
As a heating temperature, the above-mentioned range of 13 × 10 2 to 14 × 10 2 ° C. is preferable, and when the heating temperature is higher than 14 × 10 2 ° C., the diameter of the silicon carbide nanowire becomes thick. When the heating temperature is lower than 13 × 10 2 ° C., the yield of the silicon carbide nanostructure of the present invention is remarkably reduced.
The heating time is preferably in the range of 0.3 to 1.2 hours. Since silicon carbide nanostructures can be sufficiently obtained in 1.2 hours, it is not necessary to spend more time. If the heating time is shorter than 0.3 hours, a part of the raw material remains unreacted.
By performing the above operation, a silicon carbide nanostructure having a plate-like crystal made of silicon carbide epitaxially grown perpendicularly from the side surface of the silicon carbide nanowire is obtained.

次に実施例を示して、さらに具体的に説明する。
用いた加熱装置は、カーボン繊維の断熱材で覆われたグラファイト誘導加熱円筒管を内側に有する石英管製の縦型高周波誘導加熱炉で、その上部と下部にガス導入口がり、下部にガス排出口が付いている。
和光純薬工業（株）製の一酸化ケイ素粉末（純度９９．９％）１．０ｇ、和光純薬工業（株）製のグラファイト粉末（純度９９％）０．１５ｇおよびアルドリッチ社製の酸化ガリウム粉末（純度９９．９９％）０．０５ｇの混合物をグラファイトるつぼに入れ、このるつぼを上記した縦型高周波誘導加熱炉の中に取り付けた。加熱炉内をおよそ０．２Ｔｏｒｒの減圧にした後、上部のガス導入口から１５０ｓｃｃｍの流量のアルゴンガスを流し、下部のガス導入口から２００ｓｃｃｍの流量のアルゴンガスを流しながら、るつぼの内容物を１３５０℃に１時間加熱した。
その後、加熱炉を室温に冷却し、グラファイトるつぼの中に堆積した明緑色の粉末０．１３２ｇを採取した。 Next, an example is shown and it demonstrates more concretely.
The heating apparatus used is a vertical high-frequency induction heating furnace made of a quartz tube having a graphite induction heating cylindrical tube covered with a carbon fiber heat insulating material inside, and has a gas inlet at the top and bottom and a gas exhaust at the bottom. With an exit.
1.0 g of silicon monoxide powder (purity 99.9%) manufactured by Wako Pure Chemical Industries, Ltd., 0.15 g of graphite powder (purity 99%) manufactured by Wako Pure Chemical Industries, Ltd. and gallium oxide manufactured by Aldrich A mixture of 0.05 g of powder (purity 99.99%) was placed in a graphite crucible, and this crucible was mounted in the vertical high frequency induction heating furnace described above. After reducing the pressure in the heating furnace to about 0.2 Torr, the argon gas at a flow rate of 150 sccm is flowed from the upper gas inlet, and the argon gas at a flow rate of 200 sccm is flowed from the lower gas inlet, Heat to 1350 ° C. for 1 hour.
Thereafter, the heating furnace was cooled to room temperature, and 0.132 g of light green powder deposited in the graphite crucible was collected.

図１に、得られた明緑色粉末のＸ線回折のパターンを示した。格子定数ａ＝４．３６１Åを有する立方晶系のβ−炭化ケイ素であることが分かった。   FIG. 1 shows an X-ray diffraction pattern of the obtained bright green powder. It was found to be cubic β-silicon carbide having a lattice constant a = 4.361３６.

図２に、得られた明緑色粉末の低倍率走査型電子顕微鏡像の写真を示した。この写真から直径５０〜７０ｎｍ、長さ数十μｍの細長い繊維状構造物が生成していることが分かった。   In FIG. 2, the photograph of the low-magnification scanning electron microscope image of the obtained light green powder was shown. From this photograph, it was found that an elongated fibrous structure having a diameter of 50 to 70 nm and a length of several tens of μm was generated.

図３に、図２よりも倍率を上げた走査型電子顕微鏡像の写真を示した。この写真から板状結晶がナノワイヤーから直角に成長してきれいに板面が平行に並んでいることが分かる。板状結晶の厚さは、およそ５〜１０ｎｍであることが分かった。   FIG. 3 shows a photograph of a scanning electron microscope image at a higher magnification than that in FIG. From this photograph, it can be seen that the plate-like crystals grow perpendicularly from the nanowires and the plate surfaces are neatly arranged in parallel. The thickness of the plate crystal was found to be approximately 5-10 nm.

図４に、１本のナノ構造物の透過型電子顕微鏡像を示した。ナノワイヤーから直角に板状結晶が成長していることが分かる。   FIG. 4 shows a transmission electron microscope image of one nanostructure. It can be seen that the plate crystals are growing at right angles from the nanowires.

図５に、図４における板状結晶部分のエネルギー分散型Ｘ線分析の結果を示した。   FIG. 5 shows the result of energy dispersive X-ray analysis of the plate crystal portion in FIG.

図６に、図４におけるナノワイヤー部分（長い幹に相当する部分）のエネルギー分散型Ｘ線分析の結果を示した。
図５、図６の両方とも珪素と炭素のピークを示し、両方の組成は共に炭化ケイ素であることが分かった。なお、銅のピークは試料を取り付ける際に用いた銅グリッドに由来するものである。 FIG. 6 shows the result of energy dispersive X-ray analysis of the nanowire portion (portion corresponding to a long trunk) in FIG.
Both FIG. 5 and FIG. 6 showed silicon and carbon peaks, and both compositions were found to be silicon carbide. The copper peak is derived from the copper grid used when attaching the sample.

図７に、電界電子放出特性を測定した結果を示す。陽極とサンプル間の距離を５０μｍとしたときの印加電圧と電流密度の関係を示してある。１０μＡ／ｃｍ２の電流密度を生じるときの電場を開始電圧とすると、その値は１２Ｖ／μｍであった。 FIG. 7 shows the results of measuring the field electron emission characteristics. The relationship between applied voltage and current density when the distance between the anode and the sample is 50 μm is shown. Assuming that the electric field at the time of generating a current density of 10 μA / cm 2 is a starting voltage, the value is 12 V / μm.

本発明において、酸化ガリウムを使用しないと、本発明の生成物が得られないことから、酸化ガリウムは触媒的な作用をしているものと考えられる。   In the present invention, since the product of the present invention cannot be obtained unless gallium oxide is used, it is considered that gallium oxide has a catalytic action.

本発明により、炭化ケイ素ナノワイヤーの側面から直角に成長した炭化ケイ素からなる板状結晶を有する炭化ケイ素ナノ構造物が得られたので、電界電子放出体をはじめとするオプトエレクトロニクス分野での多大な貢献が期待される。   According to the present invention, a silicon carbide nanostructure having a plate-like crystal composed of silicon carbide grown at right angles from the side surface of the silicon carbide nanowire has been obtained. A contribution is expected.

実施例で示した炭化ケイ素ナノ構造物のＸ線回折のパターンを示すグラフ。The graph which shows the pattern of the X-ray diffraction of the silicon carbide nanostructure shown in the Example. 実施例で示した炭化ケイ素ナノ構造物の低倍率走査型電子顕微鏡像の写真。The photograph of the low magnification scanning electron microscope image of the silicon carbide nanostructure shown in the example. 実施例で示した炭化ケイ素ナノ構造物を倍率を上げて撮った走査型電子顕微鏡像の写真。The photograph of the scanning electron microscope image which took the silicon carbide nanostructure shown in the Example at a higher magnification. 実施例で示した炭化ケイ素ナノ構造物の透過型電子顕微鏡像の写真。The photograph of the transmission electron microscope image of the silicon carbide nanostructure shown in the Example. 実施例で示した炭化ケイ素ナノ構造物のうちの板状結晶部分のエネルギー分散型Ｘ線分析の結果を示すグラフ。The graph which shows the result of the energy dispersion type | mold X-ray analysis of the plate-shaped crystal part of the silicon carbide nanostructure shown in the Example. 実施例で示した炭化ケイ素ナノ構造物のナノワイヤー部分のエネルギー分散型Ｘ線分析の結果を示すグラフ。The graph which shows the result of the energy dispersive X-ray analysis of the nanowire part of the silicon carbide nanostructure shown in the Example. 実施例で示した炭化ケイ素ナノ構造物の電界電子放出特性（電圧−電流密度）を測定した結果を示すグラフ。The graph which shows the result of having measured the field electron emission characteristic (voltage-current density) of the silicon carbide nanostructure shown in the Example.

Claims (6)

炭化ケイ素ナノワイヤーの側面から直角に成長している炭化ケイ素からなる板状結晶を有することを特徴とする炭化ケイ素ナノ構造物。 A silicon carbide nanostructure having a plate-like crystal made of silicon carbide growing at right angles from the side surface of the silicon carbide nanowire. 炭化ケイ素ナノワイヤーの長さ方向をＸ軸とし、これに直交する方向をＹ軸とし、ＸＹ両軸に直交する方向をＺ軸とした場合、炭化ケイ素ナノワイヤーの側面からＹ軸方向に成長している炭化ケイ素の結晶のＹ軸方向での寸法が５０〜７０ｎｍ、この結晶のＸ軸方向での寸法が５〜１０ｎｍであることを特徴とする請求項１に記載の炭化ケイ素ナノ構造物。 When the length direction of the silicon carbide nanowire is the X axis, the direction orthogonal to the Y axis is the Y axis, and the direction orthogonal to both the XY axes is the Z axis, the silicon carbide nanowire grows in the Y axis direction from the side surface. The silicon carbide nanostructure according to claim 1, wherein the silicon carbide crystal has a size in the Y-axis direction of 50 to 70 nm, and the crystal has a size in the X-axis direction of 5 to 10 nm. 請求項１又は２に記載の炭化ケイ素ナノ構造物の製造法であって、一酸化ケイ素粉末、グラファイト粉末および酸化ガリウム粉末の混合物を不活性ガス気流中で、１３×１０２〜１４×１０２℃にて０．３〜１．２時間加熱することを特徴とする炭化ケイ素ナノ構造物の製造方法。 A manufacturing method for silicon carbide nanostructure according to claim 1 or 2, silicon powder monoxide, a mixture of graphite powder and gallium oxide powder in an inert gas stream, 13 × 10 2 ~14 × 10 2 A method for producing a silicon carbide nanostructure, comprising heating at 0.3 ° C. for 0.3 to 1.2 hours. 請求項３に記載の炭化ケイ素ナノ構造物の製造方法において、一酸化ケイ素粉末とグラファイト粉末の重量比が７：１〜３：１の範囲であることを特徴とする炭化ケイ素ナノ構造物の製造方法。 The method for producing a silicon carbide nanostructure according to claim 3, wherein the weight ratio of the silicon monoxide powder and the graphite powder is in the range of 7: 1 to 3: 1. Method. 請求項３又は４に記載の炭化ケイ素ナノ構造物の製造方法において、酸化ガリウム粉末の重量が一酸化ケイ素粉末１００重量部に対して、３〜７重量部の範囲であることを特徴とする炭化ケイ素ナノ構造物の製造方法。 The method for producing a silicon carbide nanostructure according to claim 3 or 4, wherein the weight of the gallium oxide powder is in the range of 3 to 7 parts by weight with respect to 100 parts by weight of the silicon monoxide powder. A method for producing a silicon nanostructure. 請求項３から５のいずれかに記載の炭化ケイ素ナノ構造物の製造方法において、不活性ガスとしてアルゴンガスを使用することを特徴とする炭化ケイ素ナノ構造物の製造方法。 6. The method for producing a silicon carbide nanostructure according to claim 3, wherein argon gas is used as an inert gas.
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