JP2008098617A - 集積有機発光素子を備えるリフレックスカプラ - Google Patents
集積有機発光素子を備えるリフレックスカプラ Download PDFInfo
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- JP2008098617A JP2008098617A JP2007223398A JP2007223398A JP2008098617A JP 2008098617 A JP2008098617 A JP 2008098617A JP 2007223398 A JP2007223398 A JP 2007223398A JP 2007223398 A JP2007223398 A JP 2007223398A JP 2008098617 A JP2008098617 A JP 2008098617A
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- 230000004888 barrier function Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 5
- 238000003745 diagnosis Methods 0.000 claims description 4
- 230000002123 temporal effect Effects 0.000 claims description 4
- 239000002775 capsule Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 30
- 239000003086 colorant Substances 0.000 description 9
- 230000010354 integration Effects 0.000 description 9
- 239000012044 organic layer Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000013186 photoplethysmography Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
【解決手段】リフレックスカプラは、光信号を生成するための有機発光素子と検出器領域を有する無機光検出器とを有する。有機発光素子および検出器領域は、光信号が入射する対象物から戻る照射の結果、光学的に結合され、有機発光素子と無機光検出器とが、1つの装置において集積される。
【選択図】図1
Description
Claims (18)
- リフレックスカプラであって、
光信号(105)を発するための有機発光素子(100)と、
検出器領域(120)を備える無機光検出器(115)とを備え、
発光素子(100)および検出器領域(120)は、対象物(125)に対し光信号が入射し、対象物から返って来る照射の結果、光学的に結合されることが可能で、かつ有機発光素子(100)および無機光検出器(115)が、1つの装置内に集積される、リフレックスカプラ。 - 無機光検出器(115)が、1以上のpn接合を有するドープされた半導体材料を含む、請求項1に記載のリフレックスカプラ。
- 有機発光素子(100)が、有機発光ダイオードを備える、請求項1または2に記載のリフレックスカプラ。
- 検出器領域(120)の対象物(125)に面する側に誘電体透明層シーケンス(140、150)をさらに含み、かつ有機発光素子(100)のための制御電子素子(2051)ならびに/または無機発光素子(115)のための制御および/または評価電子素子(2502)の少なくとも一部が誘電体透明層シーケンス(140、150)の内部および/または下に配列される、請求項1から3のいずれかに記載のリフレックスカプラ。
- 光信号(105)が潜在的外来光の影響を抑制するための変調を含むよう、有機発光素子(100)を制御する制御電子素子(250)をさらに含む、請求項1から4のいずれかに記載のリフレックスカプラ。
- 追加の有機発光素子および/または追加の無機光検出器をさらに含む、請求項1から5のいずれかに記載のリフレックスカプラ。
- 追加の有機発光素子が、更なる光信号を生成し、この更なる光信号が光信号(105)とは異なる周波数を有し、かつ/または追加の光検出器が光検出器(115)とは異なる波長感度を有する、請求項6に記載のリフレックスカプラ。
- 光検出器(115)が対象物(125)から反射される光(105r)または物質の蛍光発光の結果としての光を確認するよう構成される、請求項1から7のいずれかに記載のリフレックスカプラ。
- 光検出器の制御電子素子が、蛍光発光の結果としての光の時間的減衰現特性を検出するよう構成される、請求項8に記載のリフレックスカプラ。
- 追加の有機発光素子および/または追加の光検出器が、ある領域に渡ってまたはある方向に分布し、かつ光検出器が、対象物(125)または追加の対象物に対する反射を独立して検出できるように構成される、請求項6から9のいずれかに記載のリフレックスカプラ。
- 1以上の方向に配列される無機光検出器(510)と、1以上の方向において多くの無機光検出器(510)に対する対象物(125)の相対的動きを決定でき、かつ対象物(125)の速度が出力信号のパルス周波数から決定できるよう構成される評価ユニット(250)とをさらに備える、請求項10に記載のリフレックスカプラ。
- 無機光検出器(115)が、入射光強度の変化を検出するよう構成され、かつ評価ユニット(250)が、入射光強度の変化から、相対的動きを決定できるよう構成される、請求項11に記載のリフレックスカプラ。
- 評価ユニット(250)が、対象物(125)の形状認識および/または形状変化を決定できるように構成される、請求項11または12に記載のリフレックスカプラ。
- 光信号(105)を案内しかつ/または合焦するための光学素子をさらに含む、請求項1から13のいずれかに記載のリフレックスカプラ。
- 光学素子がレンズおよび/または回折素子を含む、請求項14に記載のリフレックスカプラ。
- 有機発光素子(100)が、封止カプセルを含み、かつ封止カプセルが、光学素子を含む、請求項14または15に記載のリフレックスカプラ。
- 無機光検出器(115)の構成要素および/または有機発光素子(100)を操作するための構成要素が、CMOS、BiCMOSまたはバイポーラ技術において実現される、請求項1から16のいずれかに記載のリフレックスカプラ。
- 請求項1から16のいずれかに記載のリフレックスカプラの、リフレックス光バリア、蛍光センサ、流量センサ、光学機能診断のためのセンサ、スペクトルセンサ、ラブ・オン・チップ、または降雨センサとしての用途。
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DE102006040790.3 | 2006-08-31 | ||
DE102006040790A DE102006040790B4 (de) | 2006-08-31 | 2006-08-31 | Reflexkoppler mit integriertem organischen Lichtemitter sowie Verwendung eines solchen Reflexkopplers |
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JP2008098617A true JP2008098617A (ja) | 2008-04-24 |
JP5093844B2 JP5093844B2 (ja) | 2012-12-12 |
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Cited By (4)
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JP2014067577A (ja) * | 2012-09-26 | 2014-04-17 | Seiko Epson Corp | 撮像装置 |
US9178102B2 (en) | 2013-07-17 | 2015-11-03 | Seiko Epson Corporation | Light emitting apparatus, manufacturing method of light emitting apparatus, light receiving and emitting apparatus, and electronic equipment |
JP2017021017A (ja) * | 2015-07-14 | 2017-01-26 | ジック アーゲー | 光電センサ |
WO2019021462A1 (ja) * | 2017-07-28 | 2019-01-31 | シャープ株式会社 | 表示デバイス |
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JP2010153449A (ja) * | 2008-12-24 | 2010-07-08 | Seiko Epson Corp | 光源一体型光電変換装置 |
BR122021016044B1 (pt) * | 2010-05-08 | 2022-07-19 | Bruin Biometrics, Llc | Aparelho para detecção de umidade subepidérmica (sem) |
US8587501B2 (en) * | 2011-02-17 | 2013-11-19 | Global Oled Technology Llc | Electroluminescent display device with optically communicating chiplets |
US8534442B2 (en) * | 2011-04-07 | 2013-09-17 | Walter Hanke Mechanishche Werkstätten GmbH & Co. KG | Mechanical coin checking device having a confirmation photoelectric barrier which is secure against manipulation |
JP5907011B2 (ja) | 2012-09-07 | 2016-04-20 | 株式会社デンソー | 光センサ |
CN102983154B (zh) * | 2012-11-05 | 2015-10-21 | 深圳典邦科技有限公司 | 一种集成透明oled微显示的图像收发装置及其制作方法 |
CN103107172B (zh) * | 2013-01-15 | 2015-10-21 | 深圳典邦科技有限公司 | 微显示集成背照图像传感器的oled图像收发装置 |
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CN105304682B (zh) * | 2015-10-20 | 2019-05-28 | 深圳典邦科技有限公司 | 一种硅基oled图像收发装置及其制作方法 |
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- 2006-08-31 DE DE102006040790A patent/DE102006040790B4/de active Active
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JP2003209278A (ja) * | 2002-01-16 | 2003-07-25 | Chuzaburo Ichiyoshi | 遮蔽付光結合素子 |
JP2004214498A (ja) * | 2003-01-07 | 2004-07-29 | Sharp Corp | 光結合素子 |
Cited By (7)
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JP2014067577A (ja) * | 2012-09-26 | 2014-04-17 | Seiko Epson Corp | 撮像装置 |
US9178102B2 (en) | 2013-07-17 | 2015-11-03 | Seiko Epson Corporation | Light emitting apparatus, manufacturing method of light emitting apparatus, light receiving and emitting apparatus, and electronic equipment |
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JP2017021017A (ja) * | 2015-07-14 | 2017-01-26 | ジック アーゲー | 光電センサ |
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US7897961B2 (en) | 2011-03-01 |
US20080054276A1 (en) | 2008-03-06 |
JP5093844B2 (ja) | 2012-12-12 |
DE102006040790A1 (de) | 2008-03-27 |
DE102006040790B4 (de) | 2012-04-26 |
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