JP2008094870A5

JP2008094870A5 -

Info

Publication number: JP2008094870A5
Application number: JP2006274833A
Authority: JP
Filing date: 2006-10-06
Publication date: 2009-11-19
Anticipated expiration: 2026-10-06

Claims

（ａ）有機溶剤可溶性ポリイミドと（ｂ）エポキシ化合物、（ｃ）硬化促進剤、（ｄ）窒化アルミニウム、窒化珪素、炭化珪素、窒化硼素、酸化アルミニウムから選択される少なくとも１種の無機粒子を含有し、（ｂ）エポキシ化合物を１００重量部に対し、（ａ）有機溶剤可溶性ポリイミドを１５〜９０重量部、（ｃ）硬化促進剤を０．１〜１０重量部含有し、（ｂ）エポキシ化合物が２５℃、１．０１３×１０^５Ｎ／ｍ^２において液状である化合物と２５℃、１．０１３×１０^５Ｎ／ｍ^２において固形である化合物を含有し、液状であるエポキシ化合物の含有量が全エポキシ化合物に対し２０重量％以上６０重量％以下である半導体用接着組成物。 Contains (a) an organic solvent-soluble polyimide and (b) an epoxy compound, (c) a curing accelerator, (d) at least one inorganic particle selected from aluminum nitride, silicon nitride, silicon carbide, boron nitride, and aluminum oxide And (b) 100 parts by weight of the epoxy compound, (a) 15 to 90 parts by weight of the organic solvent-soluble polyimide, (c) 0.1 to 10 parts by weight of the curing accelerator, and (b) the epoxy compound the content of but 25 ° C., 1.013 compounds which are liquid at × ¹⁰ 5 N / ^{m 2} and 25 ° C., containing a compound which is solid at 1.013 × ¹⁰ 5 N / ^{m 2,} an epoxy compound is a liquid Is an adhesive composition for a semiconductor, wherein 20 wt% or more and 60 wt% or less of the total epoxy compound.

（ａ）有機溶剤可溶性ポリイミドが、一般式（２）〜（７）のいずれかで表される構造を有し、かつエポキシ基と反応可能な官能基を側鎖および末端に各々少なくとも一つ有するポリマーであり、一般式（１）で表される構造を一般式（２）〜（７）中のＲ^４としてポリマー全量に対し２〜１５重量％有する請求項１記載の半導体用接着組成物。

（式中、Ｒ^１は２価の炭化水素基を示し、Ｒ^２は１価の炭化水素基を示し、同じでも異なっていてもよい。ｎは１〜１０の整数を示す。）

（式中、Ｒ^３は４〜１４価の有機基であり、Ｒ^４は２〜１２価の有機基であって、Ｒ^３、Ｒ^４の少なくとも一つは１，１，１，３，３，３−ヘキサフルオロプロピル基、イソプロピル基、エーテル基、チオエーテル基およびＳＯ_２基からなる群より選ばれる基を少なくとも一つ含有する。Ｒ^５およびＲ^６は、フェノール性水酸基、スルホン酸基およびチオール基からなる群より選ばれる基を少なくとも一つ有する有機基を示し、同じでも異なっていてもよい。Ｘは１価の有機基、Ｙは２価の有機基、Ｚは１価の有機基を示す。ｍは８〜２００の範囲を示す。αおよびβはそれぞれ０〜１０の整数を示し、α＋βは１〜１０の整数である。） (A) The organic solvent-soluble polyimide has a structure represented by any one of the general formulas (2) to (7), and has at least one functional group capable of reacting with an epoxy group at each side chain and terminal. 2. The adhesive composition for a semiconductor according to claim 1, which is a polymer and has a structure represented by the general formula (1) as R ⁴ in the general formulas (2) to (7) in an amount of 2 to 15 wt% based on the total amount of the polymer.

(In the formula, R ¹ represents a divalent hydrocarbon group, R ² represents a monovalent hydrocarbon group, and may be the same or different. N represents an integer of 1 to 10.)

(In the formula, R ³ is a 4 to 14 valent organic group, R ⁴ is a 2 to 12 valent organic group, and at least one of R ³ and R ⁴ is 1,1,1,3,3. , 3-hexafluoro-propyl group, an isopropyl group, an ether group, .R ⁵ and R ⁶ at least one contains a group selected from the group consisting of a thioether group and a SO ₂ group, the phenolic hydroxyl group, sulfonic acid group and thiol An organic group having at least one group selected from the group consisting of groups, which may be the same or different, X is a monovalent organic group, Y is a divalent organic group, and Z is a monovalent organic group. M represents a range of 8 to 200. α and β each represents an integer of 0 to 10, and α + β is an integer of 1 to 10.)

無機粒子の含有量が、硬化後の半導体用接着組成物全量に対し４０〜９５重量％である請求項１または２記載の半導体用接着組成物。The adhesive composition for a semiconductor according to claim 1 or 2, wherein the content of the inorganic particles is 40 to 95% by weight based on the total amount of the adhesive composition for a semiconductor after curing.

さらにリン酸化合物を有する請求項１〜３のいずれか記載の半導体用接着組成物。 Furthermore, the adhesive composition for semiconductors in any one of Claims 1-3 which have a phosphoric acid compound.

半導体ウェハ上に形成された請求項１〜４のいずれか記載の半導体用接着組成物のダイシングした後の切削状態が、半導体用接着組成物の切削端部を基準位置０μｍとして半導体用接着組成物の欠損部分の最大長さが２５μｍ以下である半導体用接着組成物付き半導体ウェハ。 The semiconductor adhesive composition according to any one of claims 1 to 4 , wherein the cutting state after dicing of the semiconductor adhesive composition formed on a semiconductor wafer is set to a cutting edge of the semiconductor adhesive composition at a reference position of 0 µm. A semiconductor wafer with an adhesive composition for a semiconductor, wherein the maximum length of the defective portion is 25 μm or less.

請求項１〜４のいずれか記載の半導体用接着組成物から得られた耐熱性樹脂を有する半導体装置。 The semiconductor device which has the heat resistant resin obtained from the adhesive composition for semiconductors in any one of Claims 1-4 .

電極が形成された半導体素子を複数個搭載したウェハの上に、請求項１〜４のいずれか記載の半導体用接着組成物を有するプラスチックフィルムを半導体用接着組成物が形成されている面を素子側にして仮接着し、その後ダイシングにより個片化を行い、個片化した半導体用接着組成物付き半導体素子を実装基板に搭載し、半導体素子上に形成された電極と実装基板の上の電極を直接接触させることで電気的接続を行う半導体素子の製造方法。 A plastic film having the semiconductor adhesive composition according to any one of claims 1 to 4 is formed on a wafer on which a plurality of semiconductor elements having electrodes formed thereon are mounted. The semiconductor element with the adhesive composition for semiconductor is mounted on the mounting substrate, and the electrode formed on the semiconductor element and the electrode on the mounting substrate are temporarily bonded to the side and then separated into pieces by dicing. A method for manufacturing a semiconductor device, in which electrical connection is made by direct contact with each other.

電極が形成された半導体素子を複数個搭載したウェハの上に、請求項１〜４のいずれか記載の半導体用接着組成物、粘着剤層、プラスチックフィルムを、この順に形成し、続いて半導体素子が形成されていないウェハ面を研磨加工し、その後ダイシングにより個片化を行い、個片化した半導体用接着組成物付き半導体素子を実装基板に搭載し、半導体素子上に形成された電極と実装基板の上の電極を直接接触させることで電気的接続を行う半導体素子の製造方法。 The adhesive composition for a semiconductor according to any one of claims 1 to 4 , an adhesive layer, and a plastic film are formed in this order on a wafer on which a plurality of semiconductor elements each having an electrode are mounted. Subsequently, the semiconductor elements After polishing the wafer surface on which no solder is formed, it is separated into individual pieces by dicing, and the separated semiconductor element with an adhesive composition for semiconductor is mounted on a mounting substrate, and the electrodes formed on the semiconductor element are mounted. A method for manufacturing a semiconductor element, wherein an electrical connection is made by directly contacting an electrode on a substrate.