JP2008089324A - Light source detector and imaging apparatus using it - Google Patents

Light source detector and imaging apparatus using it Download PDF

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JP2008089324A
JP2008089324A JP2006267473A JP2006267473A JP2008089324A JP 2008089324 A JP2008089324 A JP 2008089324A JP 2006267473 A JP2006267473 A JP 2006267473A JP 2006267473 A JP2006267473 A JP 2006267473A JP 2008089324 A JP2008089324 A JP 2008089324A
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light
receiving element
light receiving
light source
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Yasuhiro Fukunaga
康弘 福永
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Olympus Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light source detector which can extend a measurable dynamic range even when photoelectric currents generated by a light receiving element are significantly different because of light with different wavelengths and an imaging apparatus using it. <P>SOLUTION: The light source detector comprises a photoelectric conversion section 1 having a first light receiving element 11 for detecting the visible components of light from a subject and a second light receiving element 12 for detecting the infrared components thereof, a first read circuit 2 which comprises an operational amplifier and a first integral capacity to amplify the output of the first light receiving element, a second read circuit 3 which comprises an operational amplifier and a second integral capacity to amplify the output of the second light receiving element, and a judgment circuit 4 for judging the type of a light source on the basis of the outputs of the first and second read circuits. At least either the values of the first and second integral capacities or the standard voltages of the first and second read circuits are set to be different values. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

この発明は、光源の種類を広輝度範囲で検出可能な光源検出装置及びそれを用いた撮像装置に関する。   The present invention relates to a light source detection device capable of detecting the type of light source in a wide luminance range and an imaging device using the same.

一般に、例えば、室内において写真撮影を行う場合、タングステンランプやフラッドランプ等の人工光源を用いて被写体を照明することがある。この場合には、撮影レンズ等の有する光学特性、すなわち、色収差等の影響によって被写体像の合焦点の位置にズレが生じてしまうことがある。また、色味についても同様に光源の種類によってＡＷＢ（オートホワイトバランス機能）が上手く働かずに実際の色味と撮影された写真の色味が違ってしまうことがある。   In general, for example, when taking a picture indoors, an object may be illuminated using an artificial light source such as a tungsten lamp or a flood lamp. In this case, there may be a shift in the in-focus position of the subject image due to the optical characteristics of the photographing lens or the like, that is, the influence of chromatic aberration or the like. Similarly, depending on the type of light source, AWB (auto white balance function) does not work well, and the actual color and the color of the photographed image may differ.

例えば、特開２００５−２０８３００号公報には、焦点ズレを補正するための補正値を記憶している補正値記憶手段と、被写体を照明する光源を検出し光源に応じた信号を出力する光源検出手段とにより、焦点検出手段より得られた情報を光源に応じて補正することで、焦点ズレをなくして撮影することを可能にしたカメラについて開示がなされている。   For example, Japanese Patent Laid-Open No. 2005-208300 discloses a correction value storage unit that stores a correction value for correcting a focus shift, and a light source detection that detects a light source that illuminates a subject and outputs a signal corresponding to the light source. In other words, there is disclosed a camera that can correct the information obtained from the focus detection unit in accordance with the light source and can shoot with no focus shift.

図９は、上記特開２００５−２０８３００号公報に開示されているカメラの構成を示す概略ブロック図である。被写体を照明する光源がカメラボディ101 内の光源検知部104 で検知されると、光源検知部104 から光源に応じた信号が出力される。また、交換レンズ102 内に配置されたメモリ103 に記憶されている光源の種類に応じて焦点ずれを補正するための補正値が、補正データとして読み出される。ＡＦ制御部105 では、光源検知部104 からの信号と上記メモリ103 から読み出された補正データとに基づいて、焦点検出が実行されるように構成されている。   FIG. 9 is a schematic block diagram showing the configuration of the camera disclosed in the above Japanese Patent Laid-Open No. 2005-208300. When the light source for illuminating the subject is detected by the light source detection unit 104 in the camera body 101, the light source detection unit 104 outputs a signal corresponding to the light source. Further, a correction value for correcting defocus according to the type of light source stored in the memory 103 disposed in the interchangeable lens 102 is read as correction data. The AF control unit 105 is configured to perform focus detection based on the signal from the light source detection unit 104 and the correction data read from the memory 103.

図10に、図９における光源検知部104 の配置例を示す。図10に示すように従来例の光検知部では、光源検知センサ201 の前面に、赤外光カットフィルタ（ＩＲカットフィルタ）205 を、光源検知センサ201 のクリアモールドパッケージ202 の上面に可視光センサ203 のみを覆うように配置している。なお、図10で、204 は赤外光センサ、206 はカメラ外装、207 は拡散板を示している。このように構成することで、図11の可視光センサと赤外光センサの相対分光感度特性図に示すように、被写体の光の可視光成分Ｅと赤外光成分Ｆを分離し、図12の（Ａ）〜（Ｃ）に示すように可視光と赤外光の光電流の比で光源の種類を判別することが可能である。なお、図12の（Ａ）は蛍光灯下、図12の（Ｂ）は太陽光下、図12の（Ｃ）は電球光下での可視光センサと赤外光センサの分光感度比を示している。また、同様の光源検出手段によって光源の種類を検出してホワイトバランスを補正する技術が、例えば、特開２００２−３７４５３９号公報に開示されている。   FIG. 10 shows an arrangement example of the light source detection unit 104 in FIG. As shown in FIG. 10, in the conventional light detection unit, an infrared light cut filter (IR cut filter) 205 is provided on the front surface of the light source detection sensor 201, and a visible light sensor is provided on the upper surface of the clear mold package 202 of the light source detection sensor 201. It is arranged to cover only 203. In FIG. 10, 204 denotes an infrared light sensor, 206 denotes a camera exterior, and 207 denotes a diffusion plate. With this configuration, the visible light component E and the infrared light component F of the subject light are separated as shown in the relative spectral sensitivity characteristic diagram of the visible light sensor and the infrared light sensor in FIG. As shown in (A) to (C), the type of the light source can be determined by the ratio of the photocurrent of visible light and infrared light. 12A shows the spectral sensitivity ratio of the visible light sensor and the infrared light sensor under the fluorescent lamp, FIG. 12B shows the sunlight, and FIG. ing. Further, for example, Japanese Patent Application Laid-Open No. 2002-374539 discloses a technique for correcting the white balance by detecting the type of light source using the same light source detection means.

図13は、図11に示す相対分光感度を持った可視光と赤外光を検出できる光電変換素子の構成の一例を示す断面図である。可視光検出用の受光素子301 は、Ｎ型半導体基板303 の上にＰウエル304 を形成し、その上に更にＮ+ 型拡散層305 を形成し、その上面にＩＲカットフィルタ306 を配置して構成する。赤外光検出用の受光素子302 は、Ｎ型半導体基板303 の上に共通のＰウエル304 を形成し、その上面に可視光減衰フィルタ307 を配置して構成する。このように構成することで、図11に示すような分光感度を持った光電変換素子が実現できる。 FIG. 13 is a cross-sectional view showing an example of the configuration of a photoelectric conversion element capable of detecting visible light and infrared light having relative spectral sensitivity shown in FIG. In the light receiving element 301 for detecting visible light, a P well 304 is formed on an N type semiconductor substrate 303, an N + type diffusion layer 305 is further formed thereon, and an IR cut filter 306 is disposed on the upper surface thereof. Constitute. The light receiving element 302 for detecting infrared light is formed by forming a common P well 304 on an N-type semiconductor substrate 303 and arranging a visible light attenuation filter 307 on the upper surface thereof. With this configuration, a photoelectric conversion element having spectral sensitivity as shown in FIG. 11 can be realized.

図14の（Ａ），（Ｂ）は、図13に示した光電変換素子の可視光及び赤外光用の各受光素子301 ，302 から得られた光電流を読み出す回路の例である。図14の（Ａ）が可視光の光電流を読み出す回路であり、演算増幅器と積分容量Ｃと積分時間ＴINT を設定するスイッチと基準電圧Ｖref とからなる積分回路の演算増幅器の反転入力端子と非反転入力端子間に可視光用受光素子301 を接続して構成されており、可視光用受光素子301 の光電流をＩpd1 とすると、Ｖref ＋Ｉpd1 ・ＴINT ／Ｃで表される出力電圧Ｖout1が得られる。また図14の（Ｂ）は、赤外光の光電流を読み出す回路の構成であり、同じ構成の積分回路の演算増幅器の反転入力端子に赤外光用受光素子302 のアノードを接続して構成されており、赤外光用受光素子302 の光電流をＩpd2 とすると、Ｖref −Ｉpd2 ・ＴINT ／Ｃで表される出力電圧Ｖout2が得られる。そして、このように構成した光電流読み出し回路により、光電変換素子で受光した光の可視光成分と赤外光成分の比を高精度に検出して、光源の種類を判定することができるようになっている。
特開２００５−２０８３００号公報 特開２００２−３７４５３９号公報 14A and 14B show examples of circuits for reading out photocurrents obtained from the light receiving elements 301 and 302 for visible light and infrared light of the photoelectric conversion element shown in FIG. (A) in FIG. 14 is a circuit for reading out visible light photocurrent, and includes an inverting input terminal of an operational amplifier of an integration circuit comprising an operational amplifier, an integration capacitor C, a switch for setting an integration time TINT , and a reference voltage Vref. The visible light receiving element 301 is connected between the non-inverting input terminals. When the photocurrent of the visible light receiving element 301 is Ipd1, the output voltage Vout1 represented by Vref + Ipd1 · T INT / C is can get. FIG. 14B shows a configuration of a circuit for reading out photocurrent of infrared light, and is configured by connecting the anode of the infrared light receiving element 302 to the inverting input terminal of the operational amplifier of the integration circuit having the same configuration. If the photocurrent of the infrared light receiving element 302 is Ipd2, an output voltage Vout2 represented by Vref−Ipd2 · T INT / C is obtained. The photocurrent readout circuit configured as described above can detect the ratio of the visible light component and the infrared light component of the light received by the photoelectric conversion element with high accuracy and determine the type of the light source. It has become.
JP-A-2005-208300 JP 2002-374539 A

ところで、図13に示すように光電変換素子を構成した場合、可視光と赤外光を受光するそれぞれの受光素子（フォトダイオード）の極性が異なるものになってしまう。このように可視光と赤外光用のフォトダイオードの極性（光電流の向き）が異なるため、図15に示すように可視光と赤外光の出力で測光（検出）可能なダイナミックレンジを十分に有効に使うことができない。すなわち、赤外光のフォトダイオードの読み出し回路の出力Ｖout2でダイナミックレンジが制限されてしまう。   Incidentally, when a photoelectric conversion element is configured as shown in FIG. 13, the polarities of the respective light receiving elements (photodiodes) that receive visible light and infrared light are different. Since the polarity (photocurrent direction) of the photodiodes for visible light and infrared light is different, the dynamic range that can be measured (detected) by the output of visible light and infrared light is sufficient as shown in Fig. 15. Cannot be used effectively. In other words, the dynamic range is limited by the output Vout2 of the readout circuit of the photodiode for infrared light.

図16は、図13に示すように可視光用と赤外光用のフォトダイオードを形成した場合の各フォトダイオードの分光感度の例を示している。なお、図16は、各フォトダイオードにＩＲカットフィルタと可視光減衰フィルタを形成していないものの分光感度を示している。図16に示すように、可視光用と赤外光用のフォトダイオードは光電流の生成量が大きく違う。このような特性の光電変換素子の光電流を、図14の（Ａ），（Ｂ）に示す読み出し回路で検出すると、この読み出し回路ではゲイン（積分容量の容量値）に関しては考慮されておらず、積分容量を同一の容量値に設定すると、図16に示すように光電流の生成量が多い赤外光用のフォトダイオードの読み出し回路の出力で、測光可能なダイナミックレンジ（測光レンジ）が制限されてしまう。   FIG. 16 shows an example of the spectral sensitivity of each photodiode when a visible light photodiode and an infrared light photodiode are formed as shown in FIG. FIG. 16 shows the spectral sensitivity of each photodiode without an IR cut filter and a visible light attenuation filter. As shown in FIG. 16, the amount of photocurrent generated is significantly different between visible light and infrared light photodiodes. When the photoelectric current of the photoelectric conversion element having such characteristics is detected by the readout circuit shown in FIGS. 14A and 14B, the gain (capacitance value of the integration capacitor) is not considered in this readout circuit. When the integration capacitance is set to the same capacitance value, the dynamic range (photometry range) that can be measured is limited by the output of the photodiode readout circuit for infrared light that generates a large amount of photocurrent as shown in Fig. 16. Will be.

本発明は、従来の光源検出装置における上記課題を解消するためになされたもので、可視光や赤外光のごとく波長の異なる光により受光素子で生成される光電流が大きく異なる場合においても、測光可能なダイナミックレンジを十分に確保できるようにした光源検出装置及び、それを用いた撮像装置を提供することを目的とする。   The present invention has been made to solve the above-described problems in the conventional light source detection device, and even when the photocurrents generated by the light receiving elements due to light having different wavelengths such as visible light and infrared light are greatly different, It is an object of the present invention to provide a light source detection device capable of sufficiently securing a photometric dynamic range and an imaging device using the light source detection device.

上記課題を解決するため、請求項１に係る発明は、第１の波長に関して感度を有する第１の受光素子と、第１の波長とは異なる第２の波長に関して感度を有する第２の受光素子と、演算増幅器と第１の容量素子とからなり前記第１の受光素子からの出力を増幅する第１の読み出し回路と、演算増幅器と第２の容量素子とからなり前記第２の受光素子からの出力を増幅する第２の読み出し回路と、前記第１の読み出し回路と前記第２の読み出し回路からのそれぞれの出力に基づき、光源の種類を判定する判定回路とを有し、前記第１の容量素子と前記第２の容量素子のそれぞれの容量値、又は前記第１の読み出し回路と前記第２の読み出し回路のそれぞれの基準電圧の、少なくとも一方を異なる値として光源検出装置を構成する。   In order to solve the above problems, the invention according to claim 1 is directed to a first light receiving element having sensitivity with respect to the first wavelength, and a second light receiving element having sensitivity with respect to a second wavelength different from the first wavelength. A first readout circuit that amplifies an output from the first light receiving element, an operational amplifier and a second capacitive element, and an operational amplifier and a first capacitive element. And a determination circuit for determining the type of the light source based on the respective outputs from the first readout circuit and the second readout circuit, and The light source detection device is configured by setting at least one of the capacitance values of the capacitive element and the second capacitive element or the reference voltages of the first readout circuit and the second readout circuit as different values.

請求項２に係る発明は、請求項１に係る光源検出装置において、前記第１及び第２の受光素子並びに前記第１及び第２の読み出し回路を、それぞれ分離独立させて同一半導体基板上に一体的に形成し、前記第１の受光素子を可視光に感度を有する受光素子とすると共に前記第２の受光素子を赤外光に感度を有する受光素子とし、前記第１の受光素子の前面へのＩＲカットフィルタ、及び第２の受光素子の前面への可視光カットフィルタの少なくとも一方を配置し、可視光と赤外光の情報を得るように構成したことを特徴とするものである。   According to a second aspect of the present invention, in the light source detection device according to the first aspect, the first and second light receiving elements and the first and second readout circuits are separated and independent from each other and integrated on the same semiconductor substrate. The first light receiving element is a light receiving element having sensitivity to visible light, and the second light receiving element is a light receiving element having sensitivity to infrared light, to the front surface of the first light receiving element. The IR cut filter and at least one of the visible light cut filter on the front surface of the second light receiving element are arranged to obtain information of visible light and infrared light.

請求項３に係る発明は、請求項２に係る光源検出装置において、前記第１の受光素子は、第１の極性を有する半導体基板上に形成された第１の極性とは異なる第２の極性を有する第１の半導体層を一方の端子とし、前記第１の半導体層上に形成された第１の極性を有する第２の半導体層を他方の端子とする第１のフォトダイオードで構成され、前記第２の受光素子は、前記半導体基板上に形成された前記第１の半導体層と同一極性を有し該第１の半導体層とは独立に形成された第３の半導体層を一方の端子とし、前記半導体基板を他方の端子とする第２のフォトダイオードで構成され、前記第１のフォトダイオードの一方の端子は前記第１の読み出し回路を構成する演算増幅器の非反転入力端子と第１の基準電圧源に接続し、他方の端子は演算増幅器の反転入力端子と第１の積分容量の一端に接続し、前記第２のフォトダイオードの一方の端子は前記第２の読み出し回路を構成する演算増幅器の反転入力端子と第２の積分容量の一端に接続し、他方の端子は演算増幅器の非反転入力端子と第２の基準電圧源に接続していることを特徴とするものである。   The invention according to claim 3 is the light source detection device according to claim 2, wherein the first light receiving element has a second polarity different from the first polarity formed on the semiconductor substrate having the first polarity. A first semiconductor layer having the first semiconductor layer as one terminal and the second semiconductor layer having the first polarity formed on the first semiconductor layer as the other terminal, The second light receiving element has one terminal connected to a third semiconductor layer having the same polarity as the first semiconductor layer formed on the semiconductor substrate and formed independently of the first semiconductor layer. And a second photodiode having the semiconductor substrate as the other terminal, and one terminal of the first photodiode is connected to a non-inverting input terminal of the operational amplifier constituting the first readout circuit and a first terminal Connected to the other reference voltage source and the other terminal The inverting input terminal of the amplifier is connected to one end of the first integration capacitor, and one terminal of the second photodiode is connected to the inverting input terminal of the operational amplifier constituting the second readout circuit and the second integration capacitor. The other terminal is connected to the non-inverting input terminal of the operational amplifier and the second reference voltage source.

請求項４に係る発明は、前記請求項１記載の光源検出装置と、該光源検出装置による検出結果に基づき、光源に応じた制御信号を生成する制御部とを備えて撮像装置を構成するものである。   The invention according to claim 4 comprises the light source detection device according to claim 1 and a control unit that generates a control signal corresponding to the light source based on a detection result by the light source detection device. It is.

本発明に係る光源検出装置によれば、第１の容量素子と第２の容量素子のそれぞれの容量値、又は第１の読み出し回路と第２の読み出し回路のそれぞれの基準電圧の、少なくとも一方を異なる値とするように構成したので、一方の受光素子の出力による制限を受けずに、検出可能な光の測光範囲を低輝度から高輝度まで拡大して光源の種類の検知が可能となる。また、本発明に係る撮像装置によれば、焦点ズレやホワイトバランスなどを、低照度から高輝度まで広範囲な光に亘って、高精度で補正することが可能となる。   According to the light source detection device of the present invention, at least one of the capacitance values of the first capacitor element and the second capacitor element or the reference voltages of the first readout circuit and the second readout circuit is obtained. Since it is configured to have different values, it is possible to detect the type of light source by expanding the photometric range of detectable light from low luminance to high luminance without being restricted by the output of one light receiving element. In addition, according to the imaging apparatus of the present invention, it is possible to correct a focus shift, white balance, and the like with high accuracy over a wide range of light from low illuminance to high luminance.

次に、本発明を実施するための最良の形態について説明する。   Next, the best mode for carrying out the present invention will be described.

（実施例１）
まず、本発明に係る光源検出装置の実施例１の概略構成を、図１に示すブロック図に基づいて説明する。本実施例に係る光源検出装置は、撮影する被写体からの光を検出する光電変換部１と、該光電変換部１からの被写体光の可視光成分の光電流と赤外光成分の光電流をそれぞれ読み出し増幅する第１及び第２の読み出し回路２，３と、第１及び第２の読み出し回路２，３からの出力に基づいて、被写体を照射する光源の種類を判定する判定回路４とで構成されている。 (Example 1)
First, a schematic configuration of a light source detection apparatus according to a first embodiment of the present invention will be described based on a block diagram shown in FIG. The light source detection apparatus according to this embodiment includes a photoelectric conversion unit 1 that detects light from a subject to be photographed, and a photocurrent of a visible light component and a photocurrent of an infrared light component of the subject light from the photoelectric conversion unit 1. First and second readout circuits 2 and 3 that respectively read out and amplify, and a determination circuit 4 that determines the type of light source that irradiates the subject based on outputs from the first and second readout circuits 2 and 3. It is configured.

次に、図１に示した光電変換部１の構成を、図２に示す断面図に基づいて説明する。光電変換部１においては、撮影する被写体からの光の可視光成分を検出する第１の受光素子11を、Ｎ型半導体基板13−Ｐウエル14−Ｎ+ 型拡散層15の構造のフォトダイオードで構成している。また被写体からの光の赤外光成分を検出する第２の受光素子12を、Ｎ型半導体基板13−第１の受光素子14のＰウエルとは分離独立して形成されているＰウエルもしくはＰ+ 型拡散層16の構造のフォトダイオードで構成している。そして第１の受光素子11の上面へのＩＲカットフィルタ17と第２の受光素子12の上面への可視光減衰フィルタ（可視光カットフィルタ）のどちらか一方又は両方を配置して、被写体からの光の可視光と赤外光のそれぞれの成分の各受光素子11，12への分離精度をより高くする。分離精度を高くすることで可視光と赤外光の出力の比を正確に検出し、光源検知精度を高めることができる。 Next, the structure of the photoelectric conversion part 1 shown in FIG. 1 is demonstrated based on sectional drawing shown in FIG. In the photoelectric conversion unit 1, the first light receiving element 11 that detects the visible light component of the light from the subject to be photographed is a photodiode having an N-type semiconductor substrate 13 -P well 14 -N + -type diffusion layer 15 structure. It is composed. Further, the second light receiving element 12 for detecting the infrared light component of the light from the subject is formed separately from the P well of the N-type semiconductor substrate 13 and the first light receiving element 14. It is composed of a photodiode having a + -type diffusion layer 16 structure. One or both of an IR cut filter 17 on the upper surface of the first light receiving element 11 and a visible light attenuation filter (visible light cut filter) on the upper surface of the second light receiving element 12 are arranged to The accuracy of separating the components of visible light and infrared light into the light receiving elements 11 and 12 is further increased. By increasing the separation accuracy, the ratio of the output of visible light and infrared light can be accurately detected, and the light source detection accuracy can be increased.

次に、図３の（Ａ），（Ｂ）に基づいて図１に示した光電変換部１の光電流を読み出す第１及び第２の読み出し回路２，３の構成について説明する。可視光成分を検出する第１の読み出し回路２は、図３の（Ａ）に示すように、可視光検出用受光素子（第１の受光素子）11のアノードを演算増幅器21の非反転入力端子と基準電圧Ｖref1に接続し、カソードを演算増幅器21の反転入力端子と第１の積分容量Ｃ01の一端に接続し、第１の積分容量Ｃ01の他端は演算増幅器21の出力端子22に接続し、第１の積分容量Ｃ01と並列に光電流を積分する積分時間ＴINT を制御するためのスイッチ素子23を接続して構成している。赤外光成分を検出する第２の読み出し回路３は、図３の（Ｂ）に示すように、赤外光検出用受光素子（第２の受光素子）12のカソードを演算増幅器21の非反転入力端子と基準電圧Ｖref2としての基板電位ＶDDに接続し、アノードを演算増幅器21の反転入力端子と第２の積分容量Ｃ02の一端に接続し、第２の積分容量Ｃ02の他端を演算増幅器21の出力端子22に接続し、第２の積分容量Ｃ02と並列に積分時間ＴINT 制御用のスイッチ素子23を接続して構成している。 Next, the configuration of the first and second readout circuits 2 and 3 that read out the photocurrent of the photoelectric conversion unit 1 shown in FIG. 1 will be described based on FIGS. As shown in FIG. 3A, the first readout circuit 2 for detecting the visible light component is connected to the anode of the visible light detecting light receiving element (first light receiving element) 11 as the non-inverting input terminal of the operational amplifier 21. And the reference voltage Vref1, the cathode is connected to the inverting input terminal of the operational amplifier 21 and one end of the first integration capacitor C01, and the other end of the first integration capacitor C01 is connected to the output terminal 22 of the operational amplifier 21. The switch element 23 for controlling the integration time T INT for integrating the photocurrent is connected in parallel with the first integration capacitor C01. As shown in FIG. 3B, the second readout circuit 3 for detecting the infrared light component uses the cathode of the infrared light detection light receiving element (second light receiving element) 12 as the non-inversion of the operational amplifier 21. The input terminal is connected to the substrate potential V DD as the reference voltage Vref2, the anode is connected to the inverting input terminal of the operational amplifier 21 and one end of the second integration capacitor C02, and the other end of the second integration capacitor C02 is connected to the operational amplifier. connected to the output terminal 22 of the 21 are constituted by connecting the second integrating capacitor C02 in parallel with the integration time T INT control of the switch element 23.

図３の（Ａ），（Ｂ）に示すように、光電変換部の第１及び第２の読み出し回路２，３を構成することで、第１の読み出し回路２においては、可視光検出用受光素子11の光電流をＩpd1 ，第１の積分容量Ｃ01の容量値Ｃ01とすると、出力端子22より、Ｖref1＋Ｉpd1 ・ＴINT ／Ｃ01で表される出力電圧Ｖout1が出力される。また第２の読み出し回路３においては、赤外光検出用受光素子12の光電流をＩpd2 ，第２の積分容量Ｃ02の容量値Ｃ02とすると、出力端子22より、Ｖref2−Ｉpd2 ・ＴINT ／Ｃ02で表される出力電圧Ｖout2が出力される。 As shown in FIGS. 3A and 3B, the first and second readout circuits 2 and 3 of the photoelectric conversion unit are configured so that the first readout circuit 2 receives visible light detection light. the photocurrent of the device 11 Ipd1, when the capacitance value C 01 in the first integrating capacitor C01, the output terminal 22, an output voltage Vout1 represented by Vref1 + Ipd1 · T INT / C 01 is output. In the second readout circuit 3, the photocurrent of the infrared light detecting light-receiving element 12 Ipd2, when the capacitance value C 02 in the second integrating capacitor C02, the output terminal 22, Vref2-Ipd2 · T INT / the output voltage Vout2 represented by C 02 is output.

ここで、本実施例においては、赤外光検出用読み出し回路３の基準電圧Ｖref2を可視光検出用読み出し回路２の基準電圧Ｖref1より高く設定し、赤外光検出用読み出し回路３の第２の積分容量Ｃ02の容量値Ｃ02を可視光検出用読み出し回路２の第１の積分容量Ｃ01の容量値Ｃ01より大きく設定することで、図４に示すように、検出可能な光を低輝度から高輝度まで測光範囲を広くして光源検知をすることができる。 Here, in this embodiment, the reference voltage Vref2 of the infrared light detection readout circuit 3 is set higher than the reference voltage Vref1 of the visible light detection readout circuit 2, and the second detection circuit 3 of the infrared light detection readout circuit 3 is set. the capacitance value C 02 of the integrating capacitor C02 by setting larger than the capacitance value C 01 in the first integrating capacitor C01 of the visible light detector for reading circuit 2, as shown in FIG. 4, a detectable light from low brightness The light source can be detected by widening the photometric range up to high brightness.

上記実施例では、赤外光検出用読み出し回路３の基準電圧及び積分容量のいずれをも変えて、測光範囲を広くして光源検知を行うようにしたものを示したが、可視光検出用及び赤外光検出用の各読み出し回路２，３の基準電圧Ｖref は共通にして、可視光検出用読み出し回路２の第１の積分容量の容量値Ｃ01を小さくし、赤外光検出用読み出し回路３の第２の積分容量の容量値Ｃ02を大きく設定することによっても、図５に示すように、検出可能な測光範囲を拡大することができる。なお、図５において、点線は第１及び第２の積分容量の容量値も変えない場合の従来例と同じ出力特性を示している。 In the above-described embodiment, the light source detection is performed by changing both the reference voltage and the integration capacitance of the infrared light detection readout circuit 3 to widen the photometry range. The reference voltage Vref of each of the readout circuits 2 and 3 for detecting infrared light is made common, and the capacitance value C 01 of the first integration capacitor of the readout circuit 2 for detecting visible light is made small so that the infrared light detection readout circuit is used. Also, by setting the capacitance value C 02 of the second integral capacitance of 3 large, the detectable photometric range can be expanded as shown in FIG. In FIG. 5, the dotted line shows the same output characteristics as the conventional example when the capacitance values of the first and second integration capacitors are not changed.

また、可視光検出用及び赤外光検出用の各読み出し回路２，３の積分容量の容量値Ｃ0 を共通にして、赤外光検出用読み出し回路３の基準電圧Ｖref2を可視光検出用読み出し回路２の基準電圧Ｖref1より大にすることによっても、図６に示すように、検出可能な光量範囲を拡大して光源検知を行うことができる。なお、図６において、可視光検出用読み出し回路２の出力と赤外光検出用読み出し回路３の出力が交差しているが、双方の読み出し回路と出力端子は独立しており、光源検知は２つの出力の比によって可能であるため、問題なく光源検知動作が可能である。また図６において、点線は各読み出し回路の基準電圧を変えない場合の赤外光検出用読み出し回路の出力特性を示している。 Also, the capacitance value C 0 of the integral capacity of each readout circuits 2 and 3 for visible light detection and infrared light detected in common, read the visible light detector reference voltage Vref2 of the infrared light detector for reading circuit 3 By making it larger than the reference voltage Vref1 of the circuit 2, as shown in FIG. 6, it is possible to detect the light source by expanding the detectable light amount range. In FIG. 6, the output of the visible light detection readout circuit 2 and the output of the infrared light detection readout circuit 3 intersect, but both readout circuits and output terminals are independent, and light source detection is 2 Since it is possible by the ratio of two outputs, the light source detection operation can be performed without any problem. In FIG. 6, dotted lines indicate the output characteristics of the infrared light detection readout circuit when the reference voltage of each readout circuit is not changed.

上記実施例１及び図５及び図６に示したその変形例においては、第１の受光素子（可視光検出用受光素子）11と第２の受光素子（赤外光検出用受光素子）12を、同一半導体基板上に形成したものを示したが、各受光素子のみならず、第１及び第２の読み出し回路２，３，更には判定回路４をも、同一半導体基板上に分離独立させて一体的に形成することもできる。   In the first embodiment and its modification shown in FIGS. 5 and 6, a first light receiving element (visible light detecting light receiving element) 11 and a second light receiving element (infrared light detecting light receiving element) 12 are provided. Although shown on the same semiconductor substrate, not only the respective light receiving elements, but also the first and second readout circuits 2, 3, and the determination circuit 4 are separated and independent on the same semiconductor substrate. It can also be formed integrally.

（実施例２）
次に、本発明に係る光源検出装置を用いた撮像装置の構成例を、実施例２として説明する。この実施例に係る撮像装置としては、図７に示すように、撮影レンズを含むレンズ鏡筒と、カメラボディとを有するレンズ交換可能なカメラの例を示している。図７において、31はカメラボディ、32は交換レンズである。交換レンズ32のレンズ鏡筒の内部には被写体を照明する光源の種類（図示例では、光源Ａ，Ｂ，Ｃ）に応じて焦点ずれを補正するための補正値を記憶している補正値記憶手段33を備えている。またカメラボディ31内には、光源の種類を検知する光源検知部34と、光源検知部34で検出した光源の種類に従って補正値記憶手段33の補正データを選択し、その補正データに基づいて図示しないＡＦセンサの信号を補正するＡＦ制御部35とを備えている。そして、光源検知部34には、実施例１あるいはその変形例で示した光源検出装置を用いている。 (Example 2)
Next, a configuration example of an imaging device using the light source detection device according to the present invention will be described as a second embodiment. As an imaging apparatus according to this embodiment, as shown in FIG. 7, an example of a camera with a replaceable lens having a lens barrel including a photographing lens and a camera body is shown. In FIG. 7, 31 is a camera body, and 32 is an interchangeable lens. A correction value storage that stores correction values for correcting defocus according to the type of light source that illuminates the subject (in the example shown, light sources A, B, and C) inside the lens barrel of the interchangeable lens 32. Means 33 are provided. Also, in the camera body 31, a light source detection unit 34 that detects the type of light source, and correction data of the correction value storage means 33 are selected according to the type of light source detected by the light source detection unit 34, and the correction data shown in FIG. And an AF control unit 35 for correcting the signal of the AF sensor that does not. The light source detection unit 34 uses the light source detection device shown in the first embodiment or its modification.

次に、このように構成されているカメラの動作について説明する。まず、被写体を照明する光源を光源検知部34で検出し、検出された各光源の種類に応じて、ＡＦ制御部35が交換レンズ32内の補正値記憶手段33から最適な光源補正データを選択し、ＡＦ制御部35はＡＦセンサで検出された信号を選択された光源補正データに基づいて補正し、撮影レンズの焦点ずれを補正する。このように、光源の種類によるレンズの色収差起因の焦点ズレを、実施例１又はその変形例で示した光源検出装置を用いた光源検知部34により補正することで、低輝度から高輝度までより広範囲な光にわたって安定に良好な撮影ができる。   Next, the operation of the camera configured as described above will be described. First, the light source that illuminates the subject is detected by the light source detection unit 34, and the AF control unit 35 selects the optimum light source correction data from the correction value storage means 33 in the interchangeable lens 32 according to the type of each detected light source. Then, the AF control unit 35 corrects the signal detected by the AF sensor based on the selected light source correction data, and corrects the defocus of the photographing lens. In this way, by correcting the defocus due to the chromatic aberration of the lens depending on the type of the light source by the light source detection unit 34 using the light source detection device shown in the first embodiment or its modification, the low brightness to the high brightness can be obtained. Good shooting can be performed stably over a wide range of light.

（実施例３）
次に、実施例１で示した光源検出装置を用いたホワイトバランス補正可能な撮像装置（カメラ）を実施例３として、図８を用いて説明する。この実施例に係るカメラは、撮像光学系を介して被写体光を受光するイメージセンサ41と、三原色に対応するＲ，Ｇ，Ｂ信号を検出するＲＧＢ検出手段42と、ホワイトバランス手段43と、輝度及び色差信号を算出するマトリックス手段44と、実施例１に示した光源検出装置の可視光検出用読み出し回路に相当する可視光の輝度を検出する可視光検出手段45と、赤外光検出用読み出し回路に相当する赤外光の輝度を検出する赤外光検出手段46と、可視光検出手段45の出力と赤外光検出手段46の出力から人工光と自然光との割合を算出する、実施例１における判定回路に相当する人工光検出手段48と、ホワイトバランス用補正範囲及び補正リミット算出手段49とで構成されている。なお、図８において、47は測距手段である。 (Example 3)
Next, an imaging apparatus (camera) capable of white balance correction using the light source detection apparatus shown in the first embodiment will be described as a third embodiment with reference to FIG. The camera according to this embodiment includes an image sensor 41 that receives subject light via an imaging optical system, an RGB detection unit 42 that detects R, G, and B signals corresponding to the three primary colors, a white balance unit 43, and a luminance. And a matrix means 44 for calculating a color difference signal, a visible light detection means 45 for detecting the luminance of visible light corresponding to the visible light detection readout circuit of the light source detection apparatus shown in the first embodiment, and an infrared light detection readout. Infrared light detecting means 46 for detecting the luminance of infrared light corresponding to the circuit, and calculating the ratio of artificial light and natural light from the output of the visible light detecting means 45 and the output of the infrared light detecting means 46. 1 includes artificial light detection means 48 corresponding to the determination circuit 1 and white balance correction range and correction limit calculation means 49. In FIG. 8, 47 is a distance measuring means.

次に、このように構成されているカメラの動作について説明する。被写体の光をイメージセンサ41によって撮像し、イメージセンサ41の出力に基づきＲ，Ｇ，Ｂ信号をＲＧＢ検出手段42から取得し、取得したＲ，Ｇ，Ｂ信号をホワイトバランス手段43で補正し、補正後の色信号Ｒ′，Ｇ′，Ｂ′から輝度信号Ｙと２つの色差信号Ｒ−Ｙ，Ｂ−Ｙをマトリックス手段44によって算出する。光源検出装置内の可視光検出手段45と赤外光検出手段46の出力の比から人工光検出手段48で光源の種類情報を入手し、得られた光源の種類情報に基づきホワイトバランス補正を行う補正範囲と補正リミットをホワイトバランス補正範囲及び補正リミット算出手段49により算出し、マトリックス手段44によって得られた色差信号が算出した補正範囲内のときは、ホワイトバランス手段43に補正範囲とリミット値をフィードバックしてホワイトバランス補正を行う。これにより、実施例１又はその変形例で示した光源検出装置を用いて、広範囲の光に渡っても安定して光源の種類情報を得ることができ、良好なホワイトバランス補正が可能になる。   Next, the operation of the camera configured as described above will be described. The light of the subject is imaged by the image sensor 41, R, G, B signals are acquired from the RGB detection means 42 based on the output of the image sensor 41, and the acquired R, G, B signals are corrected by the white balance means 43, A luminance signal Y and two color difference signals RY and BY are calculated by the matrix means 44 from the corrected color signals R ′, G ′ and B ′. The artificial light detection means 48 obtains the light source type information from the ratio of the outputs of the visible light detection means 45 and the infrared light detection means 46 in the light source detection device, and performs white balance correction based on the obtained light source type information. The correction range and the correction limit are calculated by the white balance correction range and the correction limit calculation means 49. Feedback and white balance correction. As a result, it is possible to obtain light source type information stably over a wide range of light using the light source detection device shown in the first embodiment or its modification, and it is possible to perform good white balance correction.

本発明に係る光源検出装置の実施例１の基本構成を示す概略ブロック図である。It is a schematic block diagram which shows the basic composition of Example 1 of the light source detection apparatus which concerns on this invention. 図１に示した実施例１における光電変換部の構成を示す断面図である。It is sectional drawing which shows the structure of the photoelectric conversion part in Example 1 shown in FIG. 図１に示した実施例１における第１及び第２の読み出し回路の構成を示す回路構成図である。FIG. 2 is a circuit configuration diagram illustrating configurations of first and second readout circuits in the first embodiment illustrated in FIG. 1. 図１に示した実施例１において、第１及び第２の読み出し回路において、基準電圧と積分容量の容量値の最適化によるダイナミックレンジ（測光範囲）の拡大化を説明するための説明図である。FIG. 3 is an explanatory diagram for explaining expansion of a dynamic range (photometric range) by optimizing the reference voltage and the capacitance value of the integration capacitor in the first and second readout circuits in the first embodiment illustrated in FIG. 1. . 積分容量のみの最適化によるダイナミックレンジの拡大化を説明するための説明図である。It is explanatory drawing for demonstrating expansion of the dynamic range by optimization of only integral capacity. 基準電圧のみの最適化によるダイナミックレンジの拡大化を説明するための説明図である。It is explanatory drawing for demonstrating expansion of the dynamic range by optimization of only a reference voltage. 本発明に係る光源検出装置を用いた撮像装置の構成例を示す概略ブロック図である。It is a schematic block diagram which shows the structural example of the imaging device using the light source detection apparatus which concerns on this invention. 本発明に係る光源検出装置を用いたホワイトバランス補正可能な撮像装置の構成例を示すブロック構成図である。It is a block block diagram which shows the structural example of the imaging device which can perform white balance correction | amendment using the light source detection apparatus which concerns on this invention. 従来の焦点ズレの補正可能なカメラの構成例を示す概略ブロック図である。It is a schematic block diagram which shows the structural example of the conventional camera which can correct | amend a focus shift. 図９に示したカメラにおける光源検知部の構成例を示す図である。It is a figure which shows the structural example of the light source detection part in the camera shown in FIG. 可視光センサと赤外光センサの相対分光感度特性を示す図である。It is a figure which shows the relative spectral sensitivity characteristic of a visible light sensor and an infrared light sensor. 各種光源における可視光センサと赤外光センサの分光感度比を示す図である。It is a figure which shows the spectral sensitivity ratio of the visible light sensor and infrared light sensor in various light sources. 従来の可視光と赤外光を検出できる光電変換素子の構成例を示す断面図である。It is sectional drawing which shows the structural example of the conventional photoelectric conversion element which can detect visible light and infrared light. 可視光及び赤外光用の各受光素子の光電流の読み出し回路を示す回路構成図である。It is a circuit block diagram which shows the read circuit of the photocurrent of each light receiving element for visible light and infrared light. 従来の読み出し回路において測光範囲が制限されることを説明するための説明図である。It is explanatory drawing for demonstrating that the photometry range is restrict | limited in the conventional readout circuit. 可視光と赤外光用の各フォトダイオードの分光感度を示す図である。It is a figure which shows the spectral sensitivity of each photodiode for visible light and infrared light.

符号の説明Explanation of symbols

１ 光電変換部
２ 第１の読み出し回路
３ 第２の読み出し回路
４ 判定回路
11 第１の受光素子
12 第２の受光素子
13 Ｎ型半導体基板
14 Ｐウエル
15 Ｎ+ 型拡散層
16 Ｐウエル又はＰ+ 型拡散層
17 ＩＲカットフィルタ
18 可視光減衰フィルタ
21 演算増幅器
22 出力端子
23 スイッチ素子
31 カメラボディ
32 交換レンズ
33 補正値記憶手段
34 光源検知部
35 ＡＦ制御部
41 イメージセンサ
42 ＲＧＢ検出手段
43 ホワイトバランス手段
44 マトリックス手段
45 可視光検出手段
46 赤外光検出手段
47 測距手段
48 人工光検出手段
49 ホワイトバランス用補正範囲及び補正リミット算出手段 DESCRIPTION OF SYMBOLS 1 Photoelectric conversion part 2 1st read-out circuit 3 2nd read-out circuit 4 Judgment circuit
11 First light receiving element
12 Second light receiving element
13 N-type semiconductor substrate
14 P-well
15 N + diffusion layer
16 P well or P + type diffusion layer
17 IR cut filter
18 Visible light attenuation filter
21 Operational amplifier
22 Output terminal
23 Switch element
31 Camera body
32 interchangeable lenses
33 Correction value storage means
34 Light source detector
35 AF controller
41 Image sensor
42 RGB detection means
43 White balance means
44 Matrix means
45 Visible light detection means
46 Infrared light detection means
47 Ranging means
48 Artificial light detection means
49 White balance correction range and correction limit calculation means

Claims (4)

第１の波長に関して感度を有する第１の受光素子と、第１の波長とは異なる第２の波長に関して感度を有する第２の受光素子と、演算増幅器と第１の容量素子とからなり前記第１の受光素子からの出力を増幅する第１の読み出し回路と、演算増幅器と第２の容量素子とからなり前記第２の受光素子からの出力を増幅する第２の読み出し回路と、前記第１の読み出し回路と前記第２の読み出し回路からのそれぞれの出力に基づき、光源の種類を判定する判定回路とを有し、前記第１の容量素子と前記第２の容量素子のそれぞれの容量値、又は前記第１の読み出し回路と前記第２の読み出し回路のそれぞれの基準電圧の、少なくとも一方を異なる値としたことを特徴とする光源検出装置。   A first light receiving element having sensitivity with respect to the first wavelength; a second light receiving element having sensitivity with respect to a second wavelength different from the first wavelength; an operational amplifier; and a first capacitive element. A first readout circuit that amplifies an output from one light receiving element, a second readout circuit that includes an operational amplifier and a second capacitive element, and amplifies the output from the second light receiving element; And a determination circuit for determining the type of the light source based on the respective outputs from the second readout circuit and the capacitance values of the first capacitor element and the second capacitor element, Alternatively, at least one of the reference voltages of the first readout circuit and the second readout circuit has a different value. 前記第１及び第２の受光素子並びに前記第１及び第２の読み出し回路を、それぞれ分離独立させて同一半導体基板上に一体的に形成し、前記第１の受光素子を可視光に感度を有する受光素子とすると共に前記第２の受光素子を赤外光に感度を有する受光素子とし、前記第１の受光素子の前面へのＩＲカットフィルタ、及び第２の受光素子の前面への可視光カットフィルタの少なくとも一方を配置し、可視光と赤外光の情報を得るように構成したことを特徴とする請求項１に係る光源検出装置。   The first and second light receiving elements and the first and second readout circuits are separately formed independently on the same semiconductor substrate, and the first light receiving element is sensitive to visible light. The light receiving element and the second light receiving element are sensitive to infrared light, an IR cut filter on the front surface of the first light receiving element, and a visible light cut on the front surface of the second light receiving element. The light source detection device according to claim 1, wherein at least one of the filters is arranged to obtain information on visible light and infrared light. 前記第１の受光素子は、第１の極性を有する半導体基板上に形成された第１の極性とは異なる第２の極性を有する第１の半導体層を一方の端子とし、前記第１の半導体層上に形成された第１の極性を有する第２の半導体層を他方の端子とする第１のフォトダイオードで構成され、前記第２の受光素子は、前記半導体基板上に形成された前記第１の半導体層と同一極性を有し該第１の半導体層とは独立に形成された第３の半導体層を一方の端子とし、前記半導体基板を他方の端子とする第２のフォトダイオードで構成され、前記第１のフォトダイオードの一方の端子は前記第１の読み出し回路を構成する演算増幅器の非反転入力端子と第１の基準電圧源に接続し、他方の端子は演算増幅器の反転入力端子と第１の積分容量の一端に接続し、前記第２のフォトダイオードの一方の端子は前記第２の読み出し回路を構成する演算増幅器の反転入力端子と第２の積分容量の一端に接続し、他方の端子は演算増幅器の非反転入力端子と第２の基準電圧源に接続していることを特徴とする請求項２に係る光源検出装置。   The first light receiving element has a first semiconductor layer having a second polarity different from the first polarity formed on the semiconductor substrate having the first polarity as one terminal, and the first semiconductor A first photodiode having a second semiconductor layer having a first polarity formed on the other terminal as the other terminal, wherein the second light receiving element is formed on the semiconductor substrate. A third photodiode having the same polarity as that of the first semiconductor layer and formed independently of the first semiconductor layer as one terminal, and a second photodiode having the semiconductor substrate as the other terminal One terminal of the first photodiode is connected to the non-inverting input terminal of the operational amplifier constituting the first readout circuit and the first reference voltage source, and the other terminal is the inverting input terminal of the operational amplifier. And one end of the first integration capacitor, One terminal of the second photodiode is connected to the inverting input terminal of the operational amplifier constituting the second readout circuit and one end of the second integration capacitor, and the other terminal is connected to the non-inverting input terminal of the operational amplifier and the second terminal. The light source detection device according to claim 2, wherein the light source detection device is connected to a reference voltage source. 前記請求項１記載の光源検出装置と、該光源検出装置による検出結果に基づき、光源に応じた制御信号を生成する制御部とを有する撮像装置。   An imaging apparatus comprising: the light source detection device according to claim 1; and a control unit that generates a control signal corresponding to the light source based on a detection result of the light source detection device.
JP2006267473A 2006-09-29 2006-09-29 Light source detector and imaging apparatus using it Withdrawn JP2008089324A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021256291A1 (en) * 2020-06-19 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021256291A1 (en) * 2020-06-19 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device

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