JP2008047724A - Apparatus and method for treating semiconductor wafer - Google Patents

Apparatus and method for treating semiconductor wafer Download PDF

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JP2008047724A
JP2008047724A JP2006222303A JP2006222303A JP2008047724A JP 2008047724 A JP2008047724 A JP 2008047724A JP 2006222303 A JP2006222303 A JP 2006222303A JP 2006222303 A JP2006222303 A JP 2006222303A JP 2008047724 A JP2008047724 A JP 2008047724A
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quartz tube
semiconductor wafer
heat capacity
wafer processing
processing apparatus
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Hatsuo Ide
初男 井出
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer treating apparatus which prevents the quality variation of a formed film. <P>SOLUTION: The semiconductor wafer treating apparatus comprises: a quartz tube 10 with a plurality of semiconductor wafers 1 inserted therein; a means 30 for heating the semiconductor wafers 1 from outside the tube 10; and a heat capacity adjuster 20 disposed on the outer or inner wall of the tube 10 extending in the lengthwise direction of the tube 10 with varying its cross sectional area along the lengthwise direction. The apparatus prevents the temperature reduction at one end 10a of the tube 10 when the wafer 1 is carried in/out from one end 10a, compared with its other end 10b, thereby preventing the quality variation of a film formed on the semiconductor wafer 1. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、複数の半導体ウェハに膜を形成する半導体ウェハ処理装置及び半導体ウェハ処理方法に関する。特に本発明は、形成された膜の品質がばらつくことを抑制できる半導体ウェハ処理装置及び半導体ウェハ処理方法に関する。   The present invention relates to a semiconductor wafer processing apparatus and a semiconductor wafer processing method for forming a film on a plurality of semiconductor wafers. In particular, the present invention relates to a semiconductor wafer processing apparatus and a semiconductor wafer processing method capable of suppressing variations in the quality of a formed film.

図４は、従来の半導体ウェハ処理装置の構成を説明する為の断面図である。この半導体ウェハ処理装置は、熱ＣＶＤ法を用いて複数のシリコンウェハ１００に膜を形成する装置である。複数のシリコンウェハ１００は、石英ボード１０２上に略垂直に保持された状態で、石英ボード１０２とともに石英管１１０の内部に搬入されている。石英管１１０の周囲には、シリコンウェハ１００を加熱するために、加熱ヒータ１３０が配置されている。   FIG. 4 is a cross-sectional view for explaining the configuration of a conventional semiconductor wafer processing apparatus. This semiconductor wafer processing apparatus is an apparatus that forms films on a plurality of silicon wafers 100 using a thermal CVD method. The plurality of silicon wafers 100 are carried into the quartz tube 110 together with the quartz board 102 while being held substantially vertically on the quartz board 102. A heater 130 is disposed around the quartz tube 110 in order to heat the silicon wafer 100.

石英管１１０の一端部１１０ａから原料ガスが導入され、かつシリコンウェハ１００が加熱ヒータ１３０により加熱されると、シリコンウェハ１００にポリシリコン等の膜（図示せず）が形成される（例えば特許文献１参照）。なお、石英ボード１０２及びシリコンウェハ１００は、一端部１１０ａから石英管１１０に搬入され、かつ石英管１１０から搬出される。   When a source gas is introduced from one end 110a of the quartz tube 110 and the silicon wafer 100 is heated by the heater 130, a film (not shown) such as polysilicon is formed on the silicon wafer 100 (for example, Patent Documents). 1). Note that the quartz board 102 and the silicon wafer 100 are carried into the quartz tube 110 from one end portion 110 a and carried out of the quartz tube 110.

特開平１０−２０９１４０号公報（第３段落、図２）Japanese Patent Laid-Open No. 10-209140 (third paragraph, FIG. 2)

石英管の一端部から半導体ウェハを搬入及び搬出する際に、石英管は、この一端部側が他端部側と比較して温度が下がる。このため、一端部側に位置する半導体ウェハと他端部側に位置する半導体ウェハの間で、膜形成時においても温度差が残ってしまい、形成される膜の品質に差が生じることがあった。また、上記した半導体ウェハ処理装置を用いて半導体ウェハを熱酸化する場合も、同様の理由により、形成される熱酸化膜の品質に差が生じることがあった。   When a semiconductor wafer is carried in and out from one end portion of the quartz tube, the temperature of the one end portion of the quartz tube is lower than that of the other end portion. For this reason, a temperature difference remains between the semiconductor wafer located on the one end side and the semiconductor wafer located on the other end side during film formation, which may cause a difference in the quality of the formed film. It was. Also, when a semiconductor wafer is thermally oxidized using the semiconductor wafer processing apparatus described above, there may be a difference in the quality of the formed thermal oxide film for the same reason.

本発明は上記のような事情を考慮してなされたものであり、その目的は、形成された膜の品質がばらつくことを抑制できる半導体ウェハ処理装置及び半導体ウェハ処理方法を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor wafer processing apparatus and a semiconductor wafer processing method capable of suppressing variations in the quality of a formed film.

上記課題を解決するため、本発明に係る半導体ウェハ処理装置は、複数の半導体ウェハが挿入される石英管と、
前記石英管の外側から前記複数の半導体ウェハを加熱する加熱手段と、
前記石英管の外壁又は内壁に設けられ、該石英管の長手方向に延伸し、かつ該長手方向に沿って断面積が変化している熱容量調整部材とを具備する。 In order to solve the above problems, a semiconductor wafer processing apparatus according to the present invention includes a quartz tube into which a plurality of semiconductor wafers are inserted, and
Heating means for heating the plurality of semiconductor wafers from the outside of the quartz tube;
A heat capacity adjusting member provided on an outer wall or an inner wall of the quartz tube, extending in a longitudinal direction of the quartz tube, and having a cross-sectional area changing along the longitudinal direction.

この半導体ウェハ処理装置によれば、前記熱容量調整部材の断面積は、前記石英管の長手方向に沿って変化しているため、例えば前記複数の半導体ウェハを搬入及び搬出する際に、前記石英管の一端部側が他端部側と比較して温度が下がることを抑制できる。従って、前記複数の半導体ウェハに形成された膜の品質がばらつくことを抑制できる。   According to this semiconductor wafer processing apparatus, since the cross-sectional area of the heat capacity adjustment member changes along the longitudinal direction of the quartz tube, for example, when the plurality of semiconductor wafers are loaded and unloaded, the quartz tube It can suppress that the temperature of one end part of this falls compared with the other end part side. Therefore, variations in the quality of the films formed on the plurality of semiconductor wafers can be suppressed.

前記半導体ウェハ処理装置は、前記石英管の一端部から前記複数の半導体ウェハが搬入及び搬出される場合、前記熱容量調整部材は、前記石英管の一端部に近づくにつれて断面積が大きくなる。   In the semiconductor wafer processing apparatus, when the plurality of semiconductor wafers are loaded and unloaded from one end of the quartz tube, the heat capacity adjusting member has a cross-sectional area that increases as it approaches the one end of the quartz tube.

前記半導体ウェハ処理装置は、ＣＶＤ用の原料ガスを導入する原料ガス導入部を更に具備してもよい。また、複数の前記熱容量調整部材が略等間隔に前記石英管の外壁又は内壁に設けられているのが好ましい。この場合、前記複数の熱容量調整部材は、前記石英管を支持する支持部材を兼ねることも可能である。   The semiconductor wafer processing apparatus may further include a source gas introduction unit that introduces a source gas for CVD. Further, it is preferable that a plurality of the heat capacity adjusting members are provided on the outer wall or the inner wall of the quartz tube at substantially equal intervals. In this case, the plurality of heat capacity adjusting members can also serve as support members for supporting the quartz tube.

本発明に係る半導体ウェハ処理方法は、石英管の外壁又は内壁に、該石英管の長手方向に延伸し、かつ該長手方向に沿って断面積が変化している熱容量調整部材を設け、
前記石英管の一端部側から複数の半導体ウェハを搬入し、前記石英管の外側から前記複数の半導体ウェハを加熱するものである。 In the semiconductor wafer processing method according to the present invention, a heat capacity adjusting member extending in the longitudinal direction of the quartz tube and changing in cross-sectional area along the longitudinal direction is provided on the outer wall or inner wall of the quartz tube,
A plurality of semiconductor wafers are carried in from one end side of the quartz tube, and the plurality of semiconductor wafers are heated from the outside of the quartz tube.

以下、図面を参照して本発明の実施形態について説明する。図１は、本発明の第１の実施形態に係る半導体ウェハ処理装置の構成を説明する為の断面図である。この半導体ウェハ処理装置は、シリコンウェハ１に熱ＣＶＤを行う装置であり、水平に配置された石英管１０、石英管１０の外壁に取り付けられた熱容量調整部材２０、並びに石英管１０及び熱容量調整部材２０の周囲に配置されたヒータ３０を有している。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view for explaining the configuration of a semiconductor wafer processing apparatus according to the first embodiment of the present invention. This semiconductor wafer processing apparatus is an apparatus for performing thermal CVD on a silicon wafer 1, and includes a horizontally disposed quartz tube 10, a heat capacity adjusting member 20 attached to the outer wall of the quartz tube 10, and a quartz tube 10 and a heat capacity adjusting member. 20 has a heater 30 arranged around 20.

石英管１０の内部には、複数のシリコンウェハ１が載置された石英ボード２が、石英管１０の一端部１０ａから搬入され、また原料ガスが一端部１０ａから導入される。なお、石英ボード２及びシリコンウェハ１の搬出も一端部１０ａから行われる。   A quartz board 2 on which a plurality of silicon wafers 1 are placed is carried into the quartz tube 10 from one end 10a of the quartz tube 10, and a source gas is introduced from the one end 10a. The quartz board 2 and the silicon wafer 1 are also carried out from the one end 10a.

石英管１０の内部に原料ガスが導入され、かつシリコンウェハ１が加熱ヒータ３０を用いて加熱されると、シリコンウェハ１に膜（例えば抵抗素子となるポリシリコン又はアモルファスシリコン：図示せず）が形成される。なお、一端部１０ａ側に位置するシリコンウェハ１の周囲における原料ガスの濃度は、他端部１０ｂ側に位置するシリコンウェハ１の周囲と比較して濃い。このため、同一の基板温度では、一端部１０ａ側に位置するシリコンウェハ１に形成される膜が、他端部１０ｂ側に位置するシリコンウェハ１に形成される膜より厚くなる。これを補正するために、ヒータ３０の出力を部分的に調整することにより、一端部１０ａ側に位置するシリコンウェハ１の温度を、他端部１０ｂ側に位置するシリコンウェハ１の温度より低くする。   When the source gas is introduced into the quartz tube 10 and the silicon wafer 1 is heated using the heater 30, a film (for example, polysilicon or amorphous silicon serving as a resistance element: not shown) is formed on the silicon wafer 1. It is formed. The concentration of the source gas around the silicon wafer 1 located on the one end 10a side is higher than that around the silicon wafer 1 located on the other end 10b side. For this reason, at the same substrate temperature, the film formed on the silicon wafer 1 located on the one end portion 10a side is thicker than the film formed on the silicon wafer 1 located on the other end portion 10b side. In order to correct this, by partially adjusting the output of the heater 30, the temperature of the silicon wafer 1 located on the one end portion 10a side is made lower than the temperature of the silicon wafer 1 located on the other end portion 10b side. .

図２は、熱容量調整部材２０が取り付けられた石英管１０の斜視図である。熱容量調整部材２０は例えば石英製であり、石英管１０の外壁に溶接されている。熱容量調整部材２０は、石英管１０の他端部１０ｂから一端部１０ａまで延伸しており、石英管１０の一端部１０ａに近づくにつれて断面積が大きくなっている。すなわち熱容量調整部材２０の熱容量は、石英管１０の一端部１０ａに近づくにつれて大きくなる。このため、石英管１０の一端部１０ａからシリコンウェハ１を搬入及び搬出する際に、石英管の一端部１０ａ側が他端部１０ｂ側と比較して温度が下がることを抑制できる。従って、シリコンウェハ１の位置によって膜の品質に差が生じることを抑制できる。   FIG. 2 is a perspective view of the quartz tube 10 to which the heat capacity adjusting member 20 is attached. The heat capacity adjusting member 20 is made of, for example, quartz and is welded to the outer wall of the quartz tube 10. The heat capacity adjusting member 20 extends from the other end portion 10b of the quartz tube 10 to the one end portion 10a, and its cross-sectional area increases as it approaches the one end portion 10a of the quartz tube 10. That is, the heat capacity of the heat capacity adjusting member 20 increases as it approaches the one end 10 a of the quartz tube 10. For this reason, when carrying in and carrying out the silicon wafer 1 from the one end part 10a of the quartz tube 10, it can suppress that the temperature of the one end part 10a side of a quartz tube falls compared with the other end part 10b side. Therefore, it is possible to suppress a difference in film quality depending on the position of the silicon wafer 1.

また、複数の熱容量調整部材２０それぞれは石英管１０の長手方向に延伸しており、かつ全周にわたって等間隔（本図の例では６０°間隔）に配置されている。このため、熱容量調整部材２０を石英管１０の支持部材（足）として用いることができる。石英管１０は上を向いている部分が最も熱負荷が大きく、この部分から劣化する場合が多いが、本実施形態では、定期的に石英管１０を回転させて上を向く領域をずらすことができるため、石英管１０の寿命を従来と比較して長くすることができる。   Further, each of the plurality of heat capacity adjusting members 20 extends in the longitudinal direction of the quartz tube 10 and is arranged at equal intervals (60 ° intervals in the example of this figure) over the entire circumference. For this reason, the heat capacity adjusting member 20 can be used as a support member (leg) of the quartz tube 10. In the quartz tube 10, the portion facing upward has the largest heat load and often deteriorates from this portion. In this embodiment, the quartz tube 10 is periodically rotated to shift the region facing upward. As a result, the lifetime of the quartz tube 10 can be increased compared to the conventional one.

以上、本発明の第１の実施形態によれば、熱容量調整部材２０は、石英管１０の一端部１０ａに近づくにつれて熱容量が大きくなっている。従って、石英管１０の一端部１０ａからシリコンウェハ１を搬入及び搬出する際に、石英管の一端部１０ａ側が他端部１０ｂ側と比較して温度が下がることを抑制できるため、シリコンウェハ１の位置によって膜の品質に差が生じることを抑制できる。
また、定期的に石英管１０を回転させて上を向く領域をずらすことができるため、石英管１０の寿命を従来と比較して長くすることができる。 As described above, according to the first embodiment of the present invention, the heat capacity adjustment member 20 has a larger heat capacity as it approaches the one end 10 a of the quartz tube 10. Therefore, when the silicon wafer 1 is carried in and out from the one end portion 10a of the quartz tube 10, the one end portion 10a side of the quartz tube can be suppressed from lowering the temperature than the other end portion 10b side. It is possible to suppress the difference in film quality depending on the position.
In addition, since the quartz tube 10 can be periodically rotated to shift the upward area, the life of the quartz tube 10 can be increased compared to the conventional one.

図２は、本発明の第２の実施形態に係る半導体ウェハ処理装置に用いられる石英管１０及び熱容量調整部材２０の構成を説明する為の斜視図である。本実施形態は、熱容量調整部材２０が石英管１０の一端部１０ａから所定部分(例えば中央部)まで延伸しているが、この所定部分から他端部１０ｂの間には熱容量調整部材２０が設けられていない点が第１の実施形態と異なる。以下、第１の実施形態と同様の構成については同一の符号を付し、説明を省略する。
本実施形態においても第１の実施形態と同様の効果を得ることができる。 FIG. 2 is a perspective view for explaining the configuration of the quartz tube 10 and the heat capacity adjusting member 20 used in the semiconductor wafer processing apparatus according to the second embodiment of the present invention. In the present embodiment, the heat capacity adjusting member 20 extends from one end portion 10a of the quartz tube 10 to a predetermined portion (for example, the central portion), and the heat capacity adjusting member 20 is provided between the predetermined portion and the other end portion 10b. This is different from the first embodiment in that this is not done. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
In this embodiment, the same effect as that of the first embodiment can be obtained.

尚、本発明は上述した実施形態に限定されるものではなく、本発明の主旨を逸脱しない範囲内で種々変更して実施することが可能である。第１及び第２の実施形態において、石英管１０は縦に配置されていてもよい。熱容量調整部材２０は石英管１０の外壁に取り付けられていたが、石英管１０の内壁に取り付けられても良い。また、第１及び第２の実施形態で示した半導体ウェハ処理装置を用いてシリコンウェハ１を熱酸化してもよい。この場合においても、シリコンウェハ１の位置によって熱酸化膜の品質がばらつくことを抑制できる。また、熱容量調整部材２０の数は図示した例に限定されない。   Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. In the first and second embodiments, the quartz tube 10 may be arranged vertically. Although the heat capacity adjusting member 20 is attached to the outer wall of the quartz tube 10, it may be attached to the inner wall of the quartz tube 10. In addition, the silicon wafer 1 may be thermally oxidized using the semiconductor wafer processing apparatus shown in the first and second embodiments. Even in this case, it is possible to suppress the quality of the thermal oxide film from varying depending on the position of the silicon wafer 1. Further, the number of heat capacity adjusting members 20 is not limited to the illustrated example.

第１の実施形態に係る半導体ウェハ処理装置の構成を説明する為の断面図。Sectional drawing for demonstrating the structure of the semiconductor wafer processing apparatus which concerns on 1st Embodiment. 石英管１０及び熱容量調整部材２０の斜視図。The perspective view of the quartz tube 10 and the heat capacity adjustment member 20. FIG. 第２の実施形態に係る半導体ウェハ処理装置に用いられる石英管１０及び熱容量調整部材２０の斜視図。The perspective view of the quartz tube 10 and the heat capacity adjustment member 20 which are used for the semiconductor wafer processing apparatus which concerns on 2nd Embodiment. 従来の半導体ウェハ処理装置の構成を説明する為の断面図。Sectional drawing for demonstrating the structure of the conventional semiconductor wafer processing apparatus.

符号の説明Explanation of symbols

１，１００…シリコンウェハ、２，１０２…石英ボード、１０，１１０…石英管、１０ａ，１１０ａ…一端部、１０ｂ…他端部、２０…熱容量調整部材、３０，１３０…ヒータ DESCRIPTION OF SYMBOLS 1,100 ... Silicon wafer, 2,102 ... Quartz board, 10, 110 ... Quartz tube, 10a, 110a ... One end part, 10b ... Other end part, 20 ... Heat capacity adjustment member, 30, 130 ... Heater

Claims (6)

複数の半導体ウェハが挿入される石英管と、
前記石英管の外側から前記複数の半導体ウェハを加熱する加熱手段と、
前記石英管の外壁又は内壁に設けられ、該石英管の長手方向に延伸し、かつ該長手方向に沿って断面積が変化している熱容量調整部材と、
を具備する半導体ウェハ処理装置。 A quartz tube into which a plurality of semiconductor wafers are inserted; and
Heating means for heating the plurality of semiconductor wafers from the outside of the quartz tube;
A heat capacity adjusting member provided on an outer wall or an inner wall of the quartz tube, extending in the longitudinal direction of the quartz tube, and having a sectional area changing along the longitudinal direction;
A semiconductor wafer processing apparatus comprising: 前記半導体ウェハ処理装置は、前記石英管の一端部から前記複数の半導体ウェハが搬入及び搬出され
前記熱容量調整部材は、前記石英管の一端部に近づくにつれて断面積が大きくなる請求項１に記載の半導体ウェハ処理装置。 2. The semiconductor wafer processing apparatus according to claim 1, wherein the plurality of semiconductor wafers are loaded and unloaded from one end portion of the quartz tube, and the heat capacity adjusting member has a cross-sectional area that increases toward the one end portion of the quartz tube. Semiconductor wafer processing equipment. ＣＶＤ用の原料ガスを導入する原料ガス導入部を更に具備する請求項１又は２に記載の半導体ウェハ処理装置。   The semiconductor wafer processing apparatus according to claim 1, further comprising a source gas introduction unit that introduces a source gas for CVD. 複数の前記熱容量調整部材が略等間隔に前記石英管の外壁又は内壁に設けられている請求項１〜３のいずれか一項に記載の半導体ウェハ処理装置。   The semiconductor wafer processing apparatus according to claim 1, wherein the plurality of heat capacity adjusting members are provided on the outer wall or the inner wall of the quartz tube at substantially equal intervals. 前記複数の熱容量調整部材は、前記石英管を支持する支持部材を兼ねる請求項４に記載の半導体ウェハ処理装置。   The semiconductor wafer processing apparatus according to claim 4, wherein the plurality of heat capacity adjustment members also serve as a support member that supports the quartz tube. 石英管の外壁又は内壁に、該石英管の長手方向に延伸し、かつ該長手方向に沿って断面積が変化している熱容量調整部材を設け、
前記石英管の一端部側から複数の半導体ウェハを搬入し、前記石英管の外側から前記複数の半導体ウェハを加熱する、半導体ウェハ処理方法。
A heat capacity adjusting member extending in the longitudinal direction of the quartz tube and changing in cross-sectional area along the longitudinal direction is provided on the outer wall or the inner wall of the quartz tube,
A semiconductor wafer processing method of carrying in a plurality of semiconductor wafers from one end side of the quartz tube and heating the plurality of semiconductor wafers from the outside of the quartz tube.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108778673A (en) * 2016-03-24 2018-11-09 宇部兴产机械株式会社 The clamping control method of injection moulding machine with elbow formula clamping

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108778673A (en) * 2016-03-24 2018-11-09 宇部兴产机械株式会社 The clamping control method of injection moulding machine with elbow formula clamping

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