JP2008028121A - Manufacturing method of semiconductor luminescence element - Google Patents
Manufacturing method of semiconductor luminescence element Download PDFInfo
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Abstract
Description
本発明は、例えば、窒化ガリウム系青紫色の半導体レーザ(ＬＤ)、窒化ガリウム系青・緑色の発光ダイオード(ＬＥＤ)のような窒化ガリウム系化合物半導体素子の製造に好適な半導体発光素子の製造方法に関する。 The present invention relates to a method for manufacturing a semiconductor light-emitting element suitable for manufacturing a gallium nitride-based compound semiconductor element such as a gallium nitride-based blue-violet semiconductor laser (LD) and a gallium nitride-based blue / green light-emitting diode (LED). About.
窒化ガリウム系ＬＤ、ＬＥＤは光ディスク装置のピックアップ用光源や各種表示用光源として広く用いられている。可視領域で発光する発光素子の発光層は、発光波長の点からIｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造が一般的である。ここで、多重量子井戸構造とは、バンドギャップエネルギーの異なる半導体薄膜層を交互に積層したもので、複数の井戸層(ウェル層)のそれぞれを、井戸層よりバンドギャップエネルギーの大きな障壁層(バリア層)で挟んで形成した半導体多層構造である。 Gallium nitride LDs and LEDs are widely used as pickup light sources and various display light sources for optical disk devices. The light emitting layer of a light emitting element that emits light in the visible region generally has a multiple quantum well structure made of a gallium nitride compound semiconductor containing In in terms of emission wavelength. Here, the multiple quantum well structure is a structure in which semiconductor thin film layers having different band gap energies are alternately stacked, and each of a plurality of well layers (well layers) has a barrier layer (barrier layer having a larger band gap energy than the well layer). It is a semiconductor multi-layer structure formed between layers.
高効率で発光する量子井戸構造を作製するためには、量子井戸構造の最適化、すなわち、井戸層、障壁層の組成及び膜厚の最適化、組成の均一化、量子井戸層への不純物ドーピング量の最適化、量子井戸構造を成長するための下地部分の転位密度の低減、量子井戸構造へかかる歪み量の低減、量子井戸構造成長後の熱履歴によるIｎ元素拡散、飛散の抑制、また不純物元素の拡散の低減、量子井戸構造のコヒーレント成長、すなわち、格子緩和せずに成長していることなどが必要であること、が開示されている（例えば、非特許文献１〜３、特許文献１,２参照）。
In order to produce a quantum well structure that emits light with high efficiency, optimization of the quantum well structure, that is, optimization of the composition and thickness of the well layer and the barrier layer, uniformity of the composition, impurity doping to the quantum well layer Optimization of the amount, reduction of dislocation density in the base part for growing the quantum well structure, reduction of strain applied to the quantum well structure, diffusion of In element due to thermal history after growth of the quantum well structure, suppression of scattering, and impurities It is disclosed that reduction of element diffusion, coherent growth of a quantum well structure, that is, growth without lattice relaxation is necessary (for example, Non-Patent
上記の量子井戸構造の作製に必要な条件・対策に加え、Ｉｎを含む窒化ガリウム系化合物半導体では、熱力学的にやや不安定であることから、井戸層と障壁層の成長界面の状態によっても発光効率が大きく左右されることが分かってきた。こうした観点から、障壁層と井戸層の成長界面で、成長中断工程を導入する提案がある（非特許文献４、特許文献３）。
In addition to the conditions and countermeasures necessary for the fabrication of the quantum well structure described above, gallium nitride compound semiconductors containing In are somewhat unstable in terms of thermodynamics, so depending on the state of the growth interface between the well layer and the barrier layer. It has been found that the luminous efficiency is greatly influenced. From such a viewpoint, there is a proposal to introduce a growth interruption process at the growth interface between the barrier layer and the well layer (Non-patent
非特許文献４では、バリア層成長終了から井戸層成長開始までの成長中断中に、意図的にIｎ原料を供給することによって、量子井戸構造の発光効率の改善を図っている。また、特許文献３文献では、障壁層成長終了から井戸層成長開始までの成長中断中、および井戸層成長終了から障壁層成長開始までの成長中断中に、III族原料ガスの供給を停止する一方、キャリアガスとＮＨ３を継続して供給して、量子ドットの形成および結晶性の向上を図っている。
In
非特許文献４の成長中断方法では、本発明者らの追試によれば、発光効率の改善効果は十分ではなく、また結晶成長毎の発光波長の変動量・ばらつきが大きかった。また、特許文献３の成長中断方法では、井戸層成長後の成長中断は量子ドットができやすい状態を作り出すため、ＬＥＤの発光層としては一定の効果が得られるものの、ＬＤの発光層としてコヒーレント発光させるという観点からは十分な効果が得られなかった。
In the growth interruption method of Non-Patent
しかしながら、発光層の発光効率はまだ向上の余地があり、ＬＤの閾電流の低減やＬＥＤの高出力化のために、Ｉｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造の発光効率の更なる向上が強く求められている。 However, there is still room for improvement in the light emission efficiency of the light emitting layer. In order to reduce the threshold current of the LD and increase the output of the LED, the light emission efficiency of the multiple quantum well structure made of a gallium nitride compound semiconductor containing In is further increased. There is a strong demand for improvement.
本発明は、Iｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造の発光層の発光効率向上が図れる半導体発光素子の製造方法を提供することにある。 An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device capable of improving the light emission efficiency of a light emitting layer having a multiple quantum well structure made of a gallium nitride compound semiconductor containing In.
上記課題を解決するために、本発明は次のように構成されている。
本発明の第１の態様は、Iｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造の発光層を有する半導体発光素子の製造方法において、前記多重量子井戸構造の障壁層と井戸層の成長界面で、III族原料ガスの供給を停止する成長中断工程を有し、前記障壁層成長終了から前記井戸層成長開始に至るまでの前記成長中断工程の時間ｔ１と、前記井戸層成長終了から前記障壁層成長開始に至るまでの前記成長中断工程の時間ｔ２が、ｔ１＜ｔ２を満たすことを特徴とする半導体発光素子の製造方法である。
In order to solve the above problems, the present invention is configured as follows.
According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device having a light emitting layer having a multiple quantum well structure made of a gallium nitride compound semiconductor containing In, and a growth interface between the barrier layer and the well layer having the multiple quantum well structure. And the growth interruption step of stopping the supply of the group III source gas, the time t 1 of the growth interruption step from the end of the barrier layer growth to the start of the well layer growth, and the end of the well layer growth In the method for manufacturing a semiconductor light emitting device, the time t 2 of the growth interruption process until the barrier layer growth starts satisfies t 1 <t 2 .
本発明の第２の態様は、第１の態様において、前記成長中断工程に、Ｖ族原料ガス及び窒素の混合ガスを供給することを特徴とする半導体発光素子の製造方法である。 According to a second aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device according to the first aspect, wherein a mixed gas of a group V source gas and nitrogen is supplied to the growth interruption step.
本発明の第３の態様は、第１の態様において、前記成長中断工程に、Ｖ族原料ガス、窒素及び水素の混合ガスを供給することを特徴とする半導体発光素子の製造方法である。 According to a third aspect of the present invention, there is provided a method for manufacturing a semiconductor light emitting device according to the first aspect, wherein a mixed gas of a group V source gas, nitrogen and hydrogen is supplied to the growth interruption step.
本発明の第４の態様は、第３の態様において、前記混合ガスの水素分圧が、前記障壁層成長終了から前記井戸層成長開始に至るまでの前記成長中断工程の時よりも、前記井戸層成長終了から前記障壁層成長開始に至るまでの前記成長中断工程の時の方が大きいことを特徴とする半導体発光素子の製造方法である。 According to a fourth aspect of the present invention, in the third aspect, the hydrogen partial pressure of the mixed gas is higher than that in the growth interruption step from the end of the barrier layer growth to the start of the well layer growth. In the method of manufacturing a semiconductor light emitting device, the time of the growth interruption process from the end of the layer growth to the start of the barrier layer growth is larger.
本発明の第５の態様は、第２〜４の態様のいずれかの態様において、前記時間ｔ２が、４０秒未満であることを特徴とする半導体発光素子の製造方法である。 A fifth aspect of the present invention, in any of the embodiments of the second to fourth embodiments, the time t 2 is the method for manufacturing a semiconductor light emitting device and less than 40 seconds.
本発明の第６の態様は、第１〜第５の態様のいずれかの態様において、有機金属気相成長法を用いて前記窒化ガリウム系化合物半導体を成長することを特徴とする半導体発光素子の製造方法である。 According to a sixth aspect of the present invention, there is provided the semiconductor light-emitting device according to any one of the first to fifth aspects, wherein the gallium nitride compound semiconductor is grown using a metal organic vapor phase epitaxy method. It is a manufacturing method.
本発明によれば、Iｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造の発光層を備える半導体発光素子の発光効率を向上できる。 ADVANTAGE OF THE INVENTION According to this invention, the light emission efficiency of a semiconductor light-emitting device provided with the light emitting layer of the multiple quantum well structure which consists of a gallium nitride type compound semiconductor containing In can be improved.
以下、本発明に係る半導体発光素子の製造方法の実施形態を説明する。 Hereinafter, embodiments of a method for manufacturing a semiconductor light emitting device according to the present invention will be described.
（第１の実施形態）
基板上に、ＩｎＧａＮからなる井戸層と障壁層とが交互に積層された多重量子井戸構造の発光層を製造する方法を述べる。結晶成長方法には、有機金属気相成長法（ＭＯＶＰＥ法）、分子線エピタキシー法（ＭＢＥ法）、ハイドライド気相成長法（ＨＶＰＥ法）などがあるが、ここでは、最も一般的なＭＯＶＰＥ法を用いて、基板上にエピタキシャル層を積層成長させた。
(First embodiment)
A method of manufacturing a light emitting layer having a multiple quantum well structure in which well layers and barrier layers made of InGaN are alternately stacked on a substrate will be described. Crystal growth methods include metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), etc. Here, the most common MOVPE method is used. An epitaxial layer was stacked and grown on the substrate.
本実施形態では、井戸層成長工程と障壁層成長工程との間、及び、障壁層成長工程と井戸層成長工程との間に、III族原料ガスを供給しない成長中断工程を設けている。これら成長中断工程において、障壁層成長終了から井戸層成長開始に至るまでの成長中断工程の時間ｔ１と、井戸層成長終了から障壁層成長開始に至るまでの成長中断工程の時間ｔ２とが、ｔ１＜ｔ２を満たすように設定している。 In the present embodiment, a growth interruption process in which no group III source gas is supplied is provided between the well layer growth process and the barrier layer growth process and between the barrier layer growth process and the well layer growth process. In these growth interruption processes, a time t 1 of the growth interruption process from the end of the barrier layer growth to the start of the well layer growth and a time t 2 of the growth interruption process from the end of the well layer growth to the start of the barrier layer growth are: , T 1 <t 2 is set.
障壁層と井戸層の成長界面での成長中断によって、熱力学的にやや不安定な状態で結晶表面近傍に堆積していたＩｎを主体とする化合物半導体の一部が、結晶表面近傍から離脱する。これにより、障壁層及び井戸層の膜厚はごく僅かであるが減少すると共に、両者の界面での結晶の急峻性が向上する。この効果によって発光効率が向上する。Ｉｎの適度な離脱を促すためには、Ｉｎの混晶比によって成長中断時間を変えることが好ましく、井戸層は障壁層よりもＩｎ混晶比が大きいことから、井戸層成長終了後から障壁層成長開始に至るまでの成長中断時間を相対的に長めに取ると効果が大きい。 Due to the growth interruption at the growth interface between the barrier layer and the well layer, a part of the compound semiconductor mainly composed of In deposited in the vicinity of the crystal surface in a slightly thermodynamically unstable state is detached from the vicinity of the crystal surface. . Thereby, although the film thickness of a barrier layer and a well layer decreases very slightly, the steepness of the crystal | crystallization at both interface improves. This effect improves luminous efficiency. In order to promote moderate separation of In, it is preferable to change the growth interruption time depending on the In mixed crystal ratio. Since the In layer has a larger In mixed crystal ratio than the barrier layer, the barrier layer is formed after completion of the growth of the well layer. A relatively long growth interruption time until the start of growth has a great effect.
成長中断工程に供給するガスは、Ｖ族原料ガス、窒素ガス及び水素ガスの混合ガスが好ましい。Ｖ族原料ガスと窒素ガスの混合ガスに加え、水素ガスを添加すると、結晶表面での原子の移動を促進させる効果が、一層向上する。
更に、混合ガスの水素分圧を、障壁層成長終了から井戸層成長開始に至るまでの成長中断工程の時よりも、井戸層成長終了から障壁層成長開始に至るまでの成長中断工程の時の方を大きくするのが好ましい。このように、結晶表面近傍でのＩｎが多い井戸層の成長界面で、水素分圧を高めることにより、結晶表面での原子の移動を促進する効果がより大きくなる。
The gas supplied to the growth interruption step is preferably a mixed gas of group V source gas, nitrogen gas and hydrogen gas. When hydrogen gas is added in addition to the mixed gas of group V source gas and nitrogen gas, the effect of promoting the movement of atoms on the crystal surface is further improved.
Furthermore, the hydrogen partial pressure of the mixed gas is changed during the growth interruption process from the end of the well layer growth to the start of the barrier layer growth, rather than during the growth interruption process from the end of the barrier layer growth to the start of the well layer growth. It is preferable to enlarge the direction. Thus, by increasing the hydrogen partial pressure at the growth interface of the well layer with a lot of In in the vicinity of the crystal surface, the effect of promoting the movement of atoms on the crystal surface is further increased.
（第２の実施形態）
ＭＯＶＰＥ法により、Ｉｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造を作製した。III族原料として、トリメチルガリウム（ＴＭＧ）、トリメチルインジウム（ＴＭＩ）を使用した。Ｖ族原料としては、アンモニア（ＮＨ３）を使用したが、モノメチルヒドラジン、ジメチルヒドラジン等の有機Ｖ族原料や、これらとアンモニアの混合ガスを用いてもよい。ｎ型ドーパントとしては、シラン（ＳｉＨ４）の希釈ガスを用いたが、ジシラン（Ｓｉ２Ｈ６）、置換アルキル基シラン、モノゲルマン（ＧｅＨ４）などを使用してもよい。
(Second Embodiment)
A multiple quantum well structure made of a gallium nitride compound semiconductor containing In was produced by the MOVPE method. Trimethylgallium (TMG) and trimethylindium (TMI) were used as Group III materials. As the group V material, ammonia (NH 3 ) is used, but organic group V materials such as monomethylhydrazine and dimethylhydrazine, and a mixed gas of these and ammonia may be used. As the n-type dopant, dilute gas of silane (SiH 4 ) was used, but disilane (Si 2 H 6 ), substituted alkyl group silane, monogermane (GeH 4 ), and the like may be used.
まず、サファイア基板上にバッファ層を介して、ｎ型ＧａＮ層を３μｍ成長した。次いで、Ｉｎ０.０１Ｇａ０.９９Ｎ層を障壁層とし、Ｉｎ０.１Ｇａ０.９Ｎを井戸層とする多重量子井戸構造を成長した。井戸層の厚さは２〜４ｎｍとし、障壁層の厚さは３〜２０ｎｍとした。井戸層成長時には、ＴＭＧ、ＴＭＩ、ＮＨ３及び窒素ガスを供給して成長した。障壁層成長には、これらに加えて水素ガスも供給したが、この水素ガスは必ずしも必須ではない。成長中断工程では、ＮＨ３ガス、窒素ガス及び水素ガスの混合ガスを供給した。障壁層成長終了から井戸層成長開始までの成長中断時間はｔ１秒とし、井戸層成長終了から障壁層成長開始までの成長中断時間はｔ２秒とした（ｔ２＞ｔ１）。また、井戸層成長終了から障壁層成長開始までの成長中断工程の時の水素分圧を、障壁層成長終了から井戸層成長開始までの成長中断工程の時よりも大きくした。図１に、量子井戸構造部の成長シーケンスの模式図を示す。図１中、ｔｗは井戸層成長工程の時間、ｔｂは障壁層成長工程の時間であり、縦軸は各ガスの供給量、横軸は時間である。なお、多重量子井戸構造の成長温度は８００℃としたが、成長中断工程中に温度を変化させることにより、井戸層と障壁層の成長温度を異なる温度としてもよい。 First, an n-type GaN layer was grown to 3 μm on a sapphire substrate via a buffer layer. Next, a multi-quantum well structure was grown using the In 0.01 Ga 0.99 N layer as a barrier layer and In 0.1 Ga 0.9 N as a well layer. The thickness of the well layer was 2 to 4 nm, and the thickness of the barrier layer was 3 to 20 nm. During the well layer growth, growth was performed by supplying TMG, TMI, NH 3 and nitrogen gas. In addition to these, hydrogen gas was also supplied for the growth of the barrier layer, but this hydrogen gas is not always necessary. In the growth interruption process, a mixed gas of NH 3 gas, nitrogen gas and hydrogen gas was supplied. The growth interruption time from the end of the barrier layer growth to the start of the well layer growth was t 1 second, and the growth interruption time from the end of the well layer growth to the start of the barrier layer growth was t 2 seconds (t 2 > t 1 ). In addition, the hydrogen partial pressure during the growth interruption process from the end of the well layer growth to the start of the barrier layer growth was made larger than that during the growth interruption process from the end of the barrier layer growth to the start of the well layer growth. In FIG. 1, the schematic diagram of the growth sequence of a quantum well structure part is shown. In Figure 1, t w is the time of the well layer growth step, t b is the time of the barrier layer growth step, the vertical axis represents the supply amount of the gas, the horizontal axis represents time. Although the growth temperature of the multiple quantum well structure is 800 ° C., the growth temperature of the well layer and the barrier layer may be different by changing the temperature during the growth interruption process.
上述した成長条件において、井戸層成長終了後の成長中断工程の水素ガス分圧と障壁層成長終了後の成長中断工程の水素ガス分圧とを同一にし、且つ成長中断時間ｔ１、ｔ２と両成長中断時の水素ガス分圧を種々に変化させ、複数の多重量子井戸構造を作製し、それらのフォトルミネッセンス（ＰＬ）強度を調べた。ＰＬ強度の測定結果を図２に示す。
なお、ＰＬ測定は室温においてＹＡＧレーザの４倍高調波（２６６ｎｍ）のパルス励起によって行った。励起強度は平均値で約２ｍＷであった。受光スリット幅は０.５ｍｍとし、ＰＬ発光はＮＤフィルタを介してＣＣＤカメラによって受光した。
Under the growth conditions described above, the hydrogen gas partial pressure in the growth interruption process after completion of the well layer growth and the hydrogen gas partial pressure in the growth interruption process after completion of the barrier layer growth are made the same, and the growth interruption times t 1 and t 2 Various multi-quantum well structures were fabricated by varying the hydrogen gas partial pressure during both growth interruptions, and their photoluminescence (PL) intensities were examined. The measurement result of PL intensity is shown in FIG.
The PL measurement was performed by pulse excitation of the fourth harmonic (266 nm) of the YAG laser at room temperature. The excitation intensity was about 2 mW on average. The light receiving slit width was 0.5 mm, and PL light was received by a CCD camera through an ND filter.
図２に示すように、ｔ２＞ｔ１のとき、ＰＬ強度が増加した。但しｔ１、ｔ２が４０秒と長くなるとＰＬ強度は低下した。また、成長中断時の水素ガス分圧が０（水素ガスを供給せず）のときよりも、水素分圧０.０５、０.１０のときの方がＰＬ強度は強かった。
また、図２の実験では成長中断時間ｔ１、ｔ２における水素分圧は同一としたが、障壁層から井戸層へ至る成長中断時の水素分圧を図２の分圧とし、井戸層から障壁層へ至る成長中断時の水素分圧をこれよりも大きくした場合には、ＰＬ強度が２０％以上増加した例があった。
As shown in FIG. 2, the PL intensity increased when t 2 > t 1 . However, when t 1 and t 2 became as long as 40 seconds, the PL intensity decreased. In addition, the PL intensity was higher when the hydrogen partial pressure was 0.05 or 0.10 than when the hydrogen gas partial pressure during the growth interruption was 0 (no hydrogen gas was supplied).
In the experiment of FIG. 2, the hydrogen partial pressure at the growth interruption times t 1 and t 2 is the same, but the hydrogen partial pressure at the time of growth interruption from the barrier layer to the well layer is the partial pressure of FIG. There was an example in which the PL intensity increased by 20% or more when the hydrogen partial pressure at the time of the growth interruption reaching the barrier layer was higher than this.
更に、図２に示す条件で作製した量子井戸構造をＸ線測定により衛星反射ピークを測定したところ、ＰＬ強度が強いものは反射ピーク形状が鋭くなり、井戸層と障壁層の結晶界面における急峻性が向上していることを確認できた（図３）。図３には、ｔ２(＝３０)＞ｔ１(＝１０)の条件で成長した多重量子井戸構造に対するＸ線回折強度と、ｔ２(＝１０)≦ｔ１(＝３０)の条件で成長した多重量子井戸構造に対するＸ線回折強度の一例を比較して示している。 Furthermore, when the satellite reflection peak was measured by X-ray measurement of the quantum well structure fabricated under the conditions shown in FIG. 2, the one with a high PL intensity had a sharper reflection peak shape, and the steepness at the crystal interface between the well layer and the barrier layer. Was confirmed to be improved (FIG. 3). FIG. 3 shows the X-ray diffraction intensity for the multiple quantum well structure grown under the condition of t 2 (= 30)> t 1 (= 10) and the condition of t 2 (= 10) ≦ t 1 (= 30). An example of X-ray diffraction intensity for a grown multiple quantum well structure is shown in comparison.
（第３の実施形態）
ＭＯＶＰＥ法より、Ｉｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造の発光層を有するＬＥＤ用のエピタキシャルウェハを作製した。使用した原料は、第２の実施形態と同じものに加え、更に、トリメチルアルミニウム（ＴＭＡ）、ビスシクロペンタジエニルマグネシウム（Ｃｐ２Ｍｇ）を使用した。
(Third embodiment)
An epitaxial wafer for LED having a light emitting layer having a multiple quantum well structure made of a gallium nitride compound semiconductor containing In was produced by the MOVPE method. In addition to the same raw materials as those in the second embodiment, trimethylaluminum (TMA) and biscyclopentadienylmagnesium (Cp 2 Mg) were used.
まず、サファイア基板上にバッファ層を介して、３μｍのｎ型ＧａＮ層を成長した。次いで、ｎ型Ａｌ０.０５Ｇａ０.９５Ｎクラッド層を成長し、その上に第２の実施形態と同等な成長条件及び成長中断条件で、Ｉｎ０.０１Ｇａ０.９９Ｎ層を障壁層とし、Ｉｎ０.１Ｇａ０.９Ｎを井戸層とする多重量子井戸構造の発光部を成長した。更に、Ｍｇドープのｐ型Ａｌ０.０７Ｇａ０.９３Ｎクラッド層を成長し、最後にＭｇドープのｐ型ＧａＮコンタクト層を成長した。このようにして作製したＬＥＤ用エピタキシャルウェハを用い、これに電極を形成した後、ＬＥＤチップを作製した。得られたＬＥＤチップに電流を注入して発光強度を調べた結果、図２の同等の結果、すなわち、図２でＰＬ強度が強かった成長中断条件の多重量子井戸構造のものほど、ＬＥＤ発光強度は大きかった。 First, a 3 μm n-type GaN layer was grown on a sapphire substrate via a buffer layer. Next, an n-type Al 0.05 Ga 0.95 N cladding layer is grown, and the In 0.01 Ga 0.99 N layer is barriered under the same growth conditions and growth interruption conditions as in the second embodiment. As a layer, a light-emitting portion having a multiple quantum well structure having In 0.1 Ga 0.9 N as a well layer was grown. Further, an Mg-doped p-type Al 0.07 Ga 0.93 N cladding layer was grown, and finally an Mg-doped p-type GaN contact layer was grown. The LED epitaxial wafer thus produced was used to form electrodes, and then an LED chip was produced. As a result of investigating the emission intensity by injecting current into the obtained LED chip, the equivalent result of FIG. 2, that is, the light emission intensity of the multiple quantum well structure under the growth interruption condition in which the PL intensity was strong in FIG. Was big.
（第４の実施形態）
ＭＯＶＰＥ法により、Ｉｎを含む窒化ガリウム系化合物半導体からなる多重量子井戸構造の発光層を有するＬＤ用のエピタキシャルウェハを作製した。原料は第２，３の実施形態と同じものを使用した。まず、ＧａＮ自立基板上に、バッファ層を介して、１μｍのｎ型Ａｌ０.０５Ｇａ０.９５Ｎ層を成長した。次いで、アンドープＧａＮ下ガイド層を成長し、更に第２の実施形態と同等な成長条件・成長中断条件でＩｎ０.１Ｇａ０.９Ｎを井戸層とし、Ｉｎ０.０２Ｇａ０.９８Ｎ層を障壁層とする多重量子井戸構造を成長した。次いで、アンドープＧａＮ上ガイド層を成長し、ＭｇをドーピングしたＡｌＧａＮ系短周期超格子クラッド構造を成長した。次いで、Ｍｇドープのｐ型ＧａＮコンタクト層を成長した。
(Fourth embodiment)
An LD epitaxial wafer having a light emitting layer having a multiple quantum well structure made of a gallium nitride compound semiconductor containing In was produced by the MOVPE method. The same raw materials as those in the second and third embodiments were used. First, a 1 μm n-type Al 0.05 Ga 0.95 N layer was grown on a GaN free-standing substrate through a buffer layer. Next, an undoped GaN lower guide layer is grown, and In 0.1 Ga 0.9 N is used as a well layer under the same growth conditions and growth interruption conditions as in the second embodiment, and In 0.02 Ga 0.98 N A multiple quantum well structure with a barrier layer was grown. Next, an undoped GaN upper guide layer was grown, and an Mg-doped AlGaN-based short period superlattice clad structure was grown. Next, an Mg-doped p-type GaN contact layer was grown.
第２の実施形態と同様な成長中断条件で作製した多重量子井戸構造を発光層とするＬＤチップを作製し、閾電流値を比較した結果、図２と同等の結果、すなわち、図２でＰＬ強度が強かった成長中断条件の多重量子井戸構造のものほど、ＬＤの閾電流は小さかった。 As a result of fabricating an LD chip having a light emitting layer with a multiple quantum well structure fabricated under the same growth interruption condition as in the second embodiment and comparing the threshold current values, the result is equivalent to FIG. 2, that is, PL in FIG. The threshold current of the LD was smaller in the multi-quantum well structure under the growth interruption condition with higher strength.
ｔ１ 障壁層成長終了から井戸層成長開始に至るまでの成長中断工程の時間
ｔ２ 井戸層成長終了から障壁層成長開始に至るまでの成長中断工程の時間
t 1 Time of growth interruption process from the end of barrier layer growth to the start of well layer growth t 2 Time of growth interruption process from the end of well layer growth to the start of barrier layer growth
Claims (6)
前記多重量子井戸構造の障壁層と井戸層の成長界面で、III族原料ガスの供給を停止する成長中断工程を有し、
前記障壁層成長終了から前記井戸層成長開始に至るまでの前記成長中断工程の時間ｔ１と、前記井戸層成長終了から前記障壁層成長開始に至るまでの前記成長中断工程の時間ｔ２が、ｔ１＜ｔ２を満たすこと
を特徴とする半導体発光素子の製造方法。 In a method for manufacturing a semiconductor light emitting device having a light emitting layer having a multiple quantum well structure made of a gallium nitride compound semiconductor containing In,
A growth interruption step of stopping the supply of the group III source gas at the growth interface between the barrier layer and the well layer of the multiple quantum well structure;
A time t 1 of the growth interruption process from the end of the barrier layer growth to the start of the well layer growth, and a time t 2 of the growth interruption process from the end of the well layer growth to the start of the barrier layer growth, A method of manufacturing a semiconductor light emitting element, wherein t 1 <t 2 is satisfied.
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