JP2007314846A - Film-forming apparatus and mo-cvd method - Google Patents

Film-forming apparatus and mo-cvd method Download PDF

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JP2007314846A
JP2007314846A JP2006147060A JP2006147060A JP2007314846A JP 2007314846 A JP2007314846 A JP 2007314846A JP 2006147060 A JP2006147060 A JP 2006147060A JP 2006147060 A JP2006147060 A JP 2006147060A JP 2007314846 A JP2007314846 A JP 2007314846A
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film forming
material introduction
raw material
vaporizer
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JP5078280B2 (en
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Tomoyuki Yoshihama
知之 吉浜
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Ulvac Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a CVD film-forming technology which has improved production efficiency by largely shortening the downtime of an apparatus into the minimal period of time. <P>SOLUTION: The film-forming apparatus for forming a film by using a CVD technique comprises: a vacuum treatment tank 2 which is connected to a vacuum pumping system: and a plurality of raw material introduction systems which vaporizes the raw material for forming the film by using a vaporizer and introduces it into the vacuum treatment tank 2. The plurality of the raw material introduction systems have a main raw material introduction system 5 which is a main system, and a preliminary raw material introduction system 6 which is in a standby state when the main raw material introduction system 5 is normally operating. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、例えばＣＶＤによって成膜を行う装置に関し、特に、ＭＯ−ＣＶＤ成膜プロセスによって成膜を行う成膜装置に関する。   The present invention relates to an apparatus for forming a film by, for example, CVD, and more particularly to an apparatus for forming a film by an MO-CVD film forming process.

一般に、ＭＯ−ＣＶＤによる成膜プロセスにおいては、原料の液体を気化器において気化させ、真空処理槽内に供給し、加熱された成膜対象物の成膜部分に原料ガスを導くようにしている（例えば、特許文献１、２参照）。   In general, in a film forming process by MO-CVD, a raw material liquid is vaporized in a vaporizer, supplied into a vacuum processing tank, and a raw material gas is guided to a film forming portion of a heated film forming object. (For example, refer to Patent Documents 1 and 2).

しかし、この気化器を安定して運転させることは極めて困難であり、実際上、気化器の閉塞が発生する場合がある。その際には、気化器を交換することが必要であるが、この交換作業中は成膜させることができないので、成膜処理の効率が低下してしまう。   However, it is extremely difficult to stably operate the vaporizer, and in practice, the vaporizer may be blocked. In that case, it is necessary to replace the vaporizer. However, since the film cannot be formed during the replacement operation, the efficiency of the film forming process is lowered.

一方、ＭＯ−ＣＶＤによる成膜装置においては、装置の構造上原料ガスをそのままの状態で排気系に流さざるを得ない。
その結果として、原料ガスが排気ポンプ内に吸着するか、あるいは膜が形成されてしまうため、排気ポンプの故障も発生する場合がある。この排気ポンプ交換時間も、当然装置のダウンタイムの原因となる。
特開平１０−１４４６１３号公報 特開平１０−２１９４５３号公報 On the other hand, in the MO-CVD film forming apparatus, the raw material gas must be allowed to flow through the exhaust system as it is because of the structure of the apparatus.
As a result, the source gas is adsorbed in the exhaust pump or a film is formed, so that the exhaust pump may fail. This exhaust pump replacement time naturally causes downtime of the apparatus.
Japanese Patent Laid-Open No. 10-144613 JP-A-10-219453

本発明は、このような従来の技術の課題を解決するためになされたもので、その目的とするところは、装置のダウンタイムを大幅に短縮し最小限して生産効率を向上可能なＣＶＤ成膜技術を提供することにある。   The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a CVD process capable of improving production efficiency by greatly reducing and minimizing apparatus downtime. To provide membrane technology.

上記目的を達成するためになされた請求項１記載の発明は、ＣＶＤによって成膜を行う成膜装置であって、真空排気系に接続された真空処理槽と、成膜原料を気化器によって気化して前記真空処理槽内に導入する成膜原料導入系とを備え、前記成膜原料導入系を複数有し、これら複数の成膜原料導入系が、前記真空処理槽内への成膜原料の導入状況に応じて切換可能に構成されているものである。
請求項２記載の発明は、請求項１記載の発明において、前記複数の成膜原料導入系が、主となるメイン成膜原料導入系と、当該メイン成膜原料導入系の正常動作時には待機状態にしておく予備成膜原料導入系を有するものである。
請求項３記載の発明は、請求項１又は２のいずれか１項記載の発明において、前記真空排気系を複数有し、これら複数の真空排気系が、前記真空処理槽内の雰囲気の排気状況に応じて切換可能に構成されているものである。
請求項４記載の発明は、請求項３記載の発明において、前記複数の真空排気系が、主となるメイン真空排気系と、当該メイン真空排気系の正常動作時には待機状態にしておく予備真空排気系を有するものである。
請求項５記載の発明は、請求項１乃至４いずれか１項記載の成膜装置を用い、成膜原料として有機金属を用いて成膜を行うＭＯ−ＣＶＤ方法である。
請求項６記載の発明は、請求項５記載の発明において、使用中の一方の成膜原料導入系の気化器に異常が生じた場合に、前記一方の成膜原料導入系の運転を停止するとともに、他方の成膜原料導入系を運転させ、前記一方の成膜原料導入系の気化器の復旧作業を行う工程を有するものである。
請求項７記載の発明は、請求項６記載の発明において、前記気化器の復旧作業として、当該気化器を有機溶媒で洗浄する工程を有するものである。 The invention described in claim 1 made to achieve the above object is a film forming apparatus for forming a film by CVD, wherein a vacuum processing tank connected to an evacuation system and a film forming material are vaporized by a vaporizer. A film forming raw material introduction system for introducing the film forming raw material into the vacuum processing tank, and having a plurality of the film forming raw material introducing systems. It is configured to be switchable according to the introduction status of the.
According to a second aspect of the present invention, in the first aspect of the invention, the plurality of film forming raw material introduction systems are in a standby state during normal operation of the main main film forming raw material introduction system and the main film forming raw material introduction system. It has a preliminary film forming raw material introduction system.
The invention according to claim 3 is the invention according to any one of claims 1 or 2, wherein the plurality of vacuum evacuation systems are provided, and the plurality of vacuum evacuation systems evacuate the atmosphere in the vacuum processing tank. It is configured to be switchable according to the above.
According to a fourth aspect of the present invention, in the third aspect of the invention, the plurality of vacuum evacuation systems include a main main evacuation system, and a preliminary vacuum evacuation that is set in a standby state during normal operation of the main evacuation system. It has a system.
A fifth aspect of the present invention is an MO-CVD method in which a film formation apparatus according to any one of the first to fourth aspects is used and film formation is performed using an organic metal as a film formation material.
According to a sixth aspect of the invention, in the fifth aspect of the invention, when an abnormality occurs in the vaporizer of one of the film forming raw material introduction systems in use, the operation of the one film forming raw material introduction system is stopped. At the same time, there is a step of operating the other film forming raw material introduction system and performing a recovery operation of the vaporizer of the one film forming raw material introduction system.
A seventh aspect of the invention is the invention of the sixth aspect, comprising a step of washing the vaporizer with an organic solvent as a recovery operation of the vaporizer.

本発明の場合、気化された成膜原料を真空処理槽に導入する成膜原料導入系を複数有し、これら複数の成膜原料導入系が、真空処理槽内への成膜原料の導入状況に応じて切換可能に構成されていることから、使用中の気化器が故障した場合であっても、他の成膜原料導入に切り換えて正常な気化器を使用することにより、ＣＶＤ成膜装置のダウンタイムを大幅に短縮することができる。   In the case of the present invention, there are a plurality of film forming raw material introduction systems for introducing vaporized film forming raw materials into the vacuum processing tank, and the plurality of film forming raw material introduction systems are introduced into the vacuum processing tank. Therefore, even if the vaporizer in use breaks down, it is possible to switch to the introduction of other film forming raw materials and use a normal vaporizer to create a CVD film forming apparatus. Can significantly reduce downtime.

本発明において、複数の成膜原料導入系が、主となるメイン成膜原料導入系と、当該メイン成膜原料導入系の正常動作時には待機状態にしておく予備成膜原料導入系を有する場合には、メイン成膜原料導入系が故障した場合に、直ちに予備成膜原料導入系を動作させることができるので、成膜装置のダウンタイムをより短縮することができる。   In the present invention, when a plurality of film forming raw material introduction systems have a main main film forming raw material introduction system and a preliminary film forming raw material introduction system that is in a standby state during normal operation of the main film forming raw material introduction system. Since the preliminary film forming material introduction system can be operated immediately when the main film forming material introduction system fails, the downtime of the film forming apparatus can be further shortened.

本発明において、複数の真空排気系が、真空処理槽内の雰囲気の排気状況に応じて切換可能に構成されている場合には、使用中の真空排気ポンプが故障した場合に、他の真空排気系に切り換えて正常な真空排気ポンプを使用することにより、成膜装置のダウンタイムを大幅に短縮することができる。   In the present invention, when the plurality of vacuum exhaust systems are configured to be switchable according to the exhaust state of the atmosphere in the vacuum processing tank, when the vacuum exhaust pump in use fails, another vacuum exhaust system can be used. By switching to the system and using a normal evacuation pump, the downtime of the film forming apparatus can be greatly reduced.

本発明において、前記複数の真空排気系が、主となるメイン真空排気系と、当該メイン真空排気系の正常動作時には待機状態にしておく予備真空排気系を有する場合には、メイン真空排気系が故障した場合に、直ちに予備真空排気系を動作させることができるので、成膜装置のダウンタイムをより短縮することができる。   In the present invention, when the plurality of evacuation systems have a main evacuation system and a preliminary evacuation system that is in a standby state during normal operation of the main evacuation system, When a failure occurs, the preliminary vacuum exhaust system can be operated immediately, so that the downtime of the film forming apparatus can be further shortened.

そして、このような本発明によれば、成膜原料として有機金属を用いてＭＯ−ＣＶＤによる成膜を効率良く行うことができる。
この場合、使用中の一方の成膜原料導入系の気化器に異常が生じた場合に、一方の成膜原料導入系の運転を停止するとともに、他方の成膜原料導入系を運転させ、一方の成膜原料導入系の気化器の復旧作業を行うようにすれば、運転中に成膜装置を元の状態に戻すことができるので、より安定した稼働が可能な成膜装置を提供することができる。 And according to such this invention, the film-forming by MO-CVD can be efficiently performed using an organic metal as a film-forming raw material.
In this case, when an abnormality occurs in the vaporizer of one film forming raw material introduction system in use, the operation of one film forming raw material introduction system is stopped and the other film forming raw material introduction system is operated. If the vaporizer of the film forming raw material introduction system is restored, the film forming apparatus can be returned to the original state during operation, so that a film forming apparatus capable of more stable operation is provided. Can do.

また、気化器の復旧作業として、当該気化器を有機溶媒で洗浄するようにすれば、気化器を交換する必要がないので、迅速な復旧作業が可能になるとともに、コストダウンを図ることができる。   In addition, if the vaporizer is cleaned with an organic solvent as a recovery operation of the vaporizer, there is no need to replace the vaporizer, so that a quick recovery operation can be performed and costs can be reduced. .

本発明によれば、装置のダウンタイムを大幅に短縮し最小限して生産効率を向上可能なＣＶＤ成膜技術を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the CVD film-forming technique which can improve production efficiency by significantly shortening and minimizing apparatus downtime can be provided.

以下、本発明の好ましい実施の形態を図面を参照して詳細に説明する。
図１は、本発明に係る成膜装置の実施の形態の概略構成図である。
図１に示すように、本実施の形態の成膜装置１は、ＭＯ−ＣＶＤプロセスによって成膜を行うもので、真空処理槽２を有し、この真空処理槽２内において、加熱可能なサセプタ３上に配置された基板４上に膜を形成するようになっている。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic configuration diagram of an embodiment of a film forming apparatus according to the present invention.
As shown in FIG. 1, a film forming apparatus 1 of the present embodiment forms a film by an MO-CVD process, and has a vacuum processing tank 2, and a susceptor that can be heated in the vacuum processing tank 2. A film is formed on the substrate 4 disposed on the substrate 3.

本実施の形態の場合、真空処理槽２は、複数の成膜原料導入系、すなわち、メイン成膜原料導入系５と、予備成膜原料導入系６に接続されている。
メイン成膜原料導入系５は、第１の液体原料供給源（プリカーサタンク）５０を有し、この第１の液体原料供給源５０は、順次、第１の液体流量計ＬＭ１、エアオペバルブＡＶ１、第１の気化器ＶＰ１、エアオペバルブＡＶ３を介して真空処理槽２に接続され、さらに、供給ノズル５１によって原料ガス２０を基板４の表面近傍に供給するように構成されている。 In the case of the present embodiment, the vacuum processing tank 2 is connected to a plurality of film forming raw material introduction systems, that is, a main film forming raw material introduction system 5 and a preliminary film forming raw material introduction system 6.
The main film forming raw material introduction system 5 has a first liquid raw material supply source (precursor tank) 50. The first liquid raw material supply source 50 sequentially includes a first liquid flow meter LM1, an air operated valve AV1, 1 is connected to the vacuum processing tank 2 through the vaporizer VP1 and the air operated valve AV3, and further, the source gas 20 is supplied to the vicinity of the surface of the substrate 4 by the supply nozzle 51.

本実施の形態においては、第１の液体流量計ＬＭ１にて測定された結果が原料導入系制御部７に入力されるようになっている。また、エアオペバルブＡＶ１、ＡＶ３は、原料導入系制御部７からの命令に基づいて動作するようになっている。   In the present embodiment, the result measured by the first liquid flow meter LM1 is input to the raw material introduction system control unit 7. The air operated valves AV1 and AV3 are operated based on a command from the raw material introduction system control unit 7.

予備成膜原料導入系６は、メイン成膜原料導入系５と同様の構成のもので、第２の液体原料供給源６０を有し、この第２の液体原料供給源６０は、順次、第２の液体流量計ＬＭ２、エアオペバルブＡＶ２、第２の気化器ＶＰ２、エアオペバルブＡＶ４を介して真空処理槽２に接続され、さらに、供給ノズル６１によって原料ガスを基板４の表面近傍に供給するように構成されている。   The preliminary film forming raw material introduction system 6 has the same configuration as the main film forming raw material introduction system 5 and includes a second liquid raw material supply source 60. 2 is connected to the vacuum processing tank 2 through the liquid flow meter LM2, the air operation valve AV2, the second vaporizer VP2, and the air operation valve AV4, and further, the supply nozzle 61 supplies the source gas to the vicinity of the surface of the substrate 4. Has been.

本実施の形態においては、第２の液体流量計ＬＭ２にて測定された結果を上述の原料導入系制御部７に入力するようになっている。また、エアオペバルブＡＶ２、ＡＶ４は、原料導入系制御部７からの命令に基づいて動作するようになっている。
本実施の形態の成膜装置１は、複数の真空排気系を有しており、真空処理槽２が、メイン真空排気系８と、予備真空排気系９に接続されている。 In the present embodiment, the result measured by the second liquid flow meter LM2 is input to the raw material introduction system control unit 7 described above. Further, the air operated valves AV2 and AV4 are operated based on a command from the raw material introduction system control unit 7.
The film forming apparatus 1 according to the present embodiment has a plurality of vacuum evacuation systems, and the vacuum processing tank 2 is connected to a main vacuum evacuation system 8 and a preliminary vacuum evacuation system 9.

メイン真空排気系８は、エアオペバルブＡＶ５を介して第１の真空排気ポンプ８０に接続されている。一方、予備真空排気系９は、メイン真空排気系８と同様の構成のもので、エアオペバルブＡＶ６を介して第２の真空排気ポンプ９０に接続されている。   The main evacuation system 8 is connected to a first evacuation pump 80 via an air operated valve AV5. On the other hand, the preliminary evacuation system 9 has the same configuration as that of the main evacuation system 8, and is connected to the second evacuation pump 90 via an air operated valve AV6.

また、真空処理槽２には、真空計１０が接続され、この真空計１０にて測定された結果が排気系制御部１１に入力されるようになっている。
そして、メイン真空排気系８のエアオペバルブＡＶ５は、この排気系制御部１１からの命令に基づいて動作するようになっており、また、予備真空排気系９のエアオペバルブＡＶ６もまた、排気系制御部１１からの命令に基づいて動作するようになっている。 Further, a vacuum gauge 10 is connected to the vacuum processing tank 2, and a result measured by the vacuum gauge 10 is input to the exhaust system control unit 11.
The air operation valve AV5 of the main vacuum exhaust system 8 is operated based on a command from the exhaust system control unit 11, and the air operation valve AV6 of the preliminary vacuum exhaust system 9 is also operated by the exhaust system control unit 11. It is designed to operate based on instructions from

図２〜図４は、本実施の形態の使用方法の例を示す説明図である。
図２は、通常の場合の使用状態を示すものである。
本実施の形態の場合、通常は、成膜原料導入系として、メイン成膜原料導入系５を使用する。すなわち、メイン成膜原料導入系５の第１の気化器ＶＰ１を運転モードにするとともに、原料導入系制御部７と連動する第１の液体流量計ＬＭ１、エアオペバルブＡＶ１およびＡＶ３を運転モードとする。 2-4 is explanatory drawing which shows the example of the usage method of this Embodiment.
FIG. 2 shows a use state in a normal case.
In the case of the present embodiment, the main film forming material introduction system 5 is normally used as the film forming material introduction system. That is, the first vaporizer VP1 of the main film forming material introduction system 5 is set to the operation mode, and the first liquid flow meter LM1 and the air operated valves AV1 and AV3 that are linked to the material introduction system control unit 7 are set to the operation mode.

そして、予備成膜原料導入系６の第２の液体流量計ＬＭ２、エアオペバルブＡＶ２およびＡＶ４は、非運転モード（待機状態）とする。
この待機状態では、例えば、第１の気化器ＶＰ１について、メイン成膜原料導入系５に異常が発生した際に直ちに動作できるように、その温度を上昇させておくことが好ましい。 Then, the second liquid flow meter LM2 and the air operated valves AV2 and AV4 of the preliminary film forming material introduction system 6 are set to the non-operation mode (standby state).
In this standby state, for example, it is preferable to raise the temperature of the first vaporizer VP1 so that the first vaporizer VP1 can be operated immediately when an abnormality occurs in the main film forming material introduction system 5.

一方、真空排気系については、メイン真空排気系８の第１の真空排気ポンプ８０を動作させ、排気を行う際にエアオペバルブＡＶ５を開けるようにする。
この場合、予備真空排気系９については待機状態とするが、メイン成膜原料導入系５に異常が発生した際、直ちに動作できるように、ポンプ２は運転させたままエアオペバルブＡＶ６を常時閉とすることが好ましい。 On the other hand, for the vacuum exhaust system, the first vacuum exhaust pump 80 of the main vacuum exhaust system 8 is operated so that the air operated valve AV5 is opened when exhausting.
In this case, the preliminary evacuation system 9 is in a standby state, but when the abnormality occurs in the main film forming material introduction system 5, the air operation valve AV6 is normally closed while the pump 2 is operated so that the pump 2 can be operated immediately. It is preferable.

図３は、メイン成膜原料導入系に異常が生じた場合の使用状態を示すものである。
上述した図２に示す状態でメイン成膜原料導入系５の運転中において、第１の気化器ＶＰ１に閉塞等の異常が発生し、第１の液体流量計ＬＭ１において設定通りの流量が得られなくなった場合には、原料導入系制御部７からの命令に基づき、メイン成膜原料導入系５を非運転モードとするとともに、予備成膜原料導入系６を運転モードとする。 FIG. 3 shows a state of use when an abnormality occurs in the main film forming material introduction system.
During the operation of the main film forming raw material introduction system 5 in the state shown in FIG. 2 described above, an abnormality such as a blockage occurs in the first vaporizer VP1, and a flow rate as set in the first liquid flow meter LM1 is obtained. When there is no more, the main film forming material introduction system 5 is set to the non-operation mode and the preliminary film formation material introduction system 6 is set to the operation mode based on a command from the material introduction system control unit 7.

具体的には、メイン成膜原料導入系５の第１の液体流量計ＬＭ１、エアオペバルブＡＶ１およびＡＶ３の動作を停止するとともに、予備成膜原料導入系６のエアオペバルブＡＶ２およびＡＶ４を運転モードとする。   Specifically, the operations of the first liquid flow meter LM1 and the air operated valves AV1 and AV3 of the main film forming material introduction system 5 are stopped, and the air operated valves AV2 and AV4 of the preliminary film forming material introduction system 6 are set to the operation mode.

そして、メイン成膜原料導入系５の第１の気化器ＶＰ１の復旧作業を行う。
この復旧作業としては、例えば、使用する液体原料に応じた有機溶媒を用いて第１の気化器ＶＰ１を洗浄することがあげられる。この場合には、第１の気化器ＶＰ１を交換する必要がないので、迅速な復旧作業が可能になるとともに、コストダウンを図ることができる。
また、第１の気化器ＶＰ１自体を新規な気化器に交換することもできる。
そして、この復旧作業の後、第１の気化器ＶＰ１について、上述した待機状態にしておくことが好ましい。 Then, the restoration work of the first vaporizer VP1 of the main film forming material introduction system 5 is performed.
As this restoration operation, for example, the first vaporizer VP1 is washed with an organic solvent corresponding to the liquid raw material to be used. In this case, it is not necessary to replace the first vaporizer VP1, so that a quick recovery operation can be performed and the cost can be reduced.
In addition, the first vaporizer VP1 itself can be replaced with a new vaporizer.
And it is preferable to make the 1st vaporizer VP1 into the standby state mentioned above after this restoration work.

図４は、メイン真空排気系に異常が生じた場合の使用状態を示すものである。
上述した図３に示す状態で運転中において、メイン真空排気系８の第１の真空排気ポンプ８０の故障により真空処理槽２の真空排気ができなくなった場合には、真空処理槽２に設けられた真空計１０の測定結果から、異常圧力上昇として排気系制御部１１が検知し、メイン真空排気系８を非運転モードとするとともに、予備真空排気系９を運転モードとする。 FIG. 4 shows a use state when an abnormality occurs in the main evacuation system.
When the vacuum processing tank 2 cannot be evacuated due to a failure of the first vacuum pump 80 of the main vacuum pumping system 8 during operation in the state shown in FIG. 3 described above, the vacuum processing tank 2 is provided. From the measurement result of the vacuum gauge 10, the exhaust system controller 11 detects an abnormal pressure rise, and the main vacuum exhaust system 8 is set to the non-operation mode and the preliminary vacuum exhaust system 9 is set to the operation mode.

具体的には、メイン真空排気系８のエアオペバルブＡＶ５を閉めるとともに、予備真空排気系９のエアオペバルブＡＶ６を開けるようにする。
そして、メイン真空排気系８の第１の真空排気ポンプ８０の復旧作業を行う。この場合、第１の真空排気ポンプ８０自体を新規な気化器に交換することもできる。
そして、この復旧作業の後、第１の真空排気ポンプ８０について、上述した待機状態にしておくことが好ましい。 Specifically, the air operated valve AV5 of the main vacuum exhaust system 8 is closed and the air operated valve AV6 of the preliminary vacuum exhaust system 9 is opened.
Then, the restoration work of the first vacuum pump 80 of the main vacuum pumping system 8 is performed. In this case, the first vacuum pump 80 itself can be replaced with a new vaporizer.
And after this restoration work, it is preferable that the first vacuum pump 80 is set in the standby state described above.

以上述べたように本実施の形態の成膜装置１によれば、メイン成膜原料導入系５と予備成膜原料導入系６が、真空処理槽２内への成膜原料の導入状況に応じて切換可能に構成されていることから、使用中のメイン成膜原料導入系５の第１の気化器ＶＰ１が故障した場合であっても、予備成膜原料導入系６に切り換えて正常な第２の気化器ＶＰ２を使用することにより、成膜装置１のダウンタイムを大幅に短縮することができる。   As described above, according to the film forming apparatus 1 of the present embodiment, the main film forming raw material introduction system 5 and the preliminary film forming raw material introduction system 6 correspond to the state of introduction of the film forming raw material into the vacuum processing tank 2. Therefore, even if the first vaporizer VP1 of the main film forming raw material introduction system 5 in use fails, the normal film formation raw material introduction system 6 is switched to the normal film forming raw material introduction system 6. By using the second vaporizer VP2, the downtime of the film forming apparatus 1 can be greatly shortened.

特に本実施の形態では、予備成膜原料導入系６を待機状態にしておくことにより、メイン成膜原料導入系５が故障した場合に、直ちに予備成膜原料導入系６を動作させることができるので、成膜装置１のダウンタイムをより短縮することができる。   In particular, in the present embodiment, by setting the preliminary film forming raw material introduction system 6 in a standby state, when the main film forming raw material introduction system 5 fails, the preliminary film forming raw material introduction system 6 can be operated immediately. Therefore, the downtime of the film forming apparatus 1 can be further shortened.

また、本実施の形態では、メイン真空排気系８と予備真空排気系９が、真空処理槽２内の雰囲気の排気状況に応じて切換可能に構成されていることから、使用中のメイン真空排気系８の第１の真空排気ポンプ８０が故障した場合であっても、予備真空排気系９に切り換えて正常な第２の真空排気ポンプ９０を使用することにより、成膜装置１のダウンタイムを大幅に短縮することができる。   In the present embodiment, the main evacuation system 8 and the preliminary evacuation system 9 are configured to be switchable according to the evacuation state of the atmosphere in the vacuum processing tank 2, so that the main evacuation system in use is in use. Even when the first evacuation pump 80 of the system 8 fails, the downtime of the film forming apparatus 1 can be reduced by switching to the preliminary evacuation system 9 and using the normal second evacuation pump 90. It can be greatly shortened.

特に、本実施の形態では、予備真空排気系９を待機状態にしておくことにより、メイン真空排気系８が故障した場合に、直ちに予備真空排気系９を動作させることができるので、成膜装置１のダウンタイムをより短縮することができる。
そして、このような本実施の形態によれば、成膜原料として有機金属を用いてＭＯ−ＣＶＤによる成膜を効率良く行うことができる。 In particular, in the present embodiment, by setting the preliminary vacuum exhaust system 9 in the standby state, when the main vacuum exhaust system 8 breaks down, the preliminary vacuum exhaust system 9 can be operated immediately. 1 downtime can be further shortened.
And according to this Embodiment like this, the film-forming by MO-CVD can be efficiently performed using an organic metal as a film-forming raw material.

特に本実施の形態では、メイン成膜原料導入系５の第１の気化器ＶＰ１に異常が生じた場合に、メイン成膜原料導入系５の運転を停止するとともに、予備成膜原料導入系６を運転させ、メイン成膜原料導入系５の気化器の復旧作業を行うことから、成膜装置１の運転中に元の状態に戻すことができ、その結果、より安定した稼働が可能な成膜装置１を提供することができる。   In particular, in the present embodiment, when an abnormality occurs in the first vaporizer VP1 of the main film forming material introduction system 5, the operation of the main film forming material introduction system 5 is stopped and the preliminary film forming material introduction system 6 is stopped. Since the vaporizer of the main film forming raw material introduction system 5 is restored, it can be returned to the original state during the operation of the film forming apparatus 1, and as a result, a more stable operation can be achieved. A membrane device 1 can be provided.

なお、本発明は上述の実施の形態に限られることなく、種々の変更を行うことができる。
例えば、上述の実施の形態においては、切換可能な成膜原料導入系及び真空排気系（メイン、予備）をそれぞれ二つ設けるようにしたが、本発明はこれに限られず、いずれも三つ以上設けることも可能である。 The present invention is not limited to the above-described embodiment, and various changes can be made.
For example, in the above-described embodiment, two switchable film forming material introduction systems and two vacuum exhaust systems (main and spare) are provided. However, the present invention is not limited to this, and three or more of each are provided. It is also possible to provide it.

また、上述の実施の形態では、切換可能な成膜原料導入系及び真空排気系をそれぞれ同一の構成にしたが、本発明はこれに限られず、プロセス等に応じて各成膜原料導入系及び真空排気系の構成を異ならせることも可能である。   In the above-described embodiment, the switchable film forming material introduction system and the vacuum exhaust system have the same configuration. However, the present invention is not limited to this, and each film forming material introduction system and It is also possible to vary the configuration of the vacuum exhaust system.

そして、成膜原料導入系及び真空排気系に関し、「メイン」又は「予備」の名称は便宜上のものであり、実質的には、稼働中のものがメインとなり、停止（待機）中のものが予備となるものである。   Regarding the film forming material introduction system and the vacuum exhaust system, the names of “main” or “reserved” are for convenience, and in actuality, the main one is in operation and the one that is stopped (standby). It will be a reserve.

＜実施例１＞
プリカーサとして、ヘキサフルオロアセチルアセトナト銅(Ｃ10Ｈ13ＣｕＦ6Ｏ2Ｓｉ、通称Ｃｕｐｒａ）を用いたＣｕ−ＣＶＤプロセスによる本発明の具体的な実施例を、気化器の制御切換の具体例に則して以下に記す。 <Example 1>
A specific example of the present invention by a Cu-CVD process using hexafluoroacetylacetonato copper (C 10 H 13 CuF 6 O 2 Si, commonly called Cupra) as a precursor is used as a specific example of control switching of a vaporizer. As a general rule:

図１に示す成膜装置を用い、第１及び第２の液体原料供給源５０、６０の何れにもＣｕｐｒａを充填し、「第２の液体原料供給源６０ → 第２の液体流量計ＬＭ２ → エアオペバルブＡＶ２ → 第２の気化器ＶＰ２ → エアオペバルブＡＶ４ → 真空処理槽２」ライン（予備成膜原料導入系６）は非運転モードとしたまま「第１の液体原料供給源５０ → 第１の液体流量計ＬＭ１ → エアオペバルブＡＶ１ → 第１の気化器ＶＰ１ → エアオペバルブＡＶ３ → 真空処理槽２」のライン（メイン成膜原料導入系５）を運転モードとする。   Using the film forming apparatus shown in FIG. 1, both the first and second liquid source supply sources 50 and 60 are filled with Cupra, and “second liquid source supply source 60 → second liquid flow meter LM2 → While the air operated valve AV2 → second vaporizer VP2 → air operated valve AV4 → vacuum processing tank 2 ”line (preliminary film forming material introduction system 6) is in the non-operation mode, the“ first liquid material supply source 50 → first liquid flow rate ” The line (main film forming material introduction system 5) of “total LM1 → air operated valve AV1 → first vaporizer VP1 → air operated valve AV3 → vacuum treatment tank 2” is set as the operation mode.

この場合、第１の気化器ＶＰ１、第２の気化器ＶＰ２ともに気化器内温度は８０℃に保つ。第１の気化器ＶＰ１に供給するＣｕｐｒａの流量を０．１４ｇ／ｍｉｎと設定する場合、第１の液体流量計ＬＭ１における流量が設定値（０．１４ｇ／ｍｉｎ）となるように気化器直前のエアオペバルブＡＶ１の開度を調整する。   In this case, the temperature in the vaporizer is kept at 80 ° C. for both the first vaporizer VP1 and the second vaporizer VP2. When the flow rate of Cupra supplied to the first vaporizer VP1 is set to 0.14 g / min, the flow rate immediately before the vaporizer is set so that the flow rate in the first liquid flow meter LM1 becomes a set value (0.14 g / min). Adjust the opening of the air operated valve AV1.

しかし、何らかの原因で第１の気化器ＶＰ１の閉塞が生じ、第１の液体流量計ＬＭ１における流量が設定値（０．１４ｇ／ｍｉｎ）通りとならず、その表示値が設定値よりも低めに表示される場合がある。   However, the first vaporizer VP1 is blocked for some reason, the flow rate in the first liquid flow meter LM1 does not become the set value (0.14 g / min), and the displayed value is lower than the set value. It may be displayed.

例えば、第１の液体流量計ＬＭ１における流量が設定値（０．１４ｇ／ｍｉｎ）の０．７倍（０．１ｇ／ｍｉｎ）以下となった場合、第１の気化器ＶＰ１は閉塞したと原料導入系制御部７が判断し、「第１の液体原料供給源５０ → 第１の液体流量計ＬＭ１ → エアオペバルブＡＶ１ → 第１の気化器ＶＰ１ → エアオペバルブＡＶ３ → 真空処理槽２」のラインを非運転モードに切り換えるとともに、「第２の液体原料供給源６０→ 第２の液体流量計ＬＭ２ → エアオペバルブＡＶ２ → 第２の気化器ＶＰ２ → エアオペバルブＡＶ４ → 真空処理槽２」ラインを運転モードとする。   For example, if the flow rate in the first liquid flow meter LM1 is 0.7 times (0.1 g / min) or less than the set value (0.14 g / min), the first vaporizer VP1 is blocked and the raw material The introduction system control unit 7 determines, and the line of “first liquid source supply source 50 → first liquid flow meter LM1 → air operated valve AV1 → first vaporizer VP1 → air operated valve AV3 → vacuum processing tank 2” is not operated. In addition to switching to the mode, the “second liquid source supply source 60 → second liquid flow meter LM2 → air operated valve AV2 → second vaporizer VP2 → air operated valve AV4 → vacuum processing tank 2” line is set to the operation mode.

そして、予備成膜原料導入系６の第２の気化器ＶＰ２を用いた成膜を続行している間に、有機 溶媒（例えば、ヘキサンＣ6Ｈ14）による洗浄、あるいは、気化器本体の交換等により、第１の気化器ＶＰ１の復旧を図る。このような処理を施すことによって、先に示した通り、一ヶ月当たりの装置ダウンタイムを１０日間削減することが出来ると期待される。 Then, while film formation using the second vaporizer VP2 of the preliminary film formation raw material introduction system 6 is continued, cleaning with an organic solvent (for example, hexane C 6 H 14 ) or replacement of the vaporizer body is performed. Thus, the first vaporizer VP1 is restored. By performing such a process, it is expected that the device downtime per month can be reduced by 10 days as described above.

＜実施例２＞
プリカーサとして、ＳＯＰＤ（Ｃ24Ｈ46ＣｕＦＯ2Ｓｉ2）を用いる場合、第１の気化器ＶＰ１、第２の気化器ＶＰ２ともに気化器内温度は２３０℃とし、ＳＯＰＤ流量は０．５ｇ／ｍｉｎとする。 <Example 2>
When SOPD (C 24 H 46 CuFO 2 Si 2 ) is used as a precursor, the temperature inside the vaporizer is 230 ° C. for both the first vaporizer VP1 and the second vaporizer VP2, and the SOPD flow rate is 0.5 g / min. To do.

本実施例の場合は、第１の液体流量計ＬＭ１における流量が設定値（０．５ｇ／ｍｉｎ）の０．７倍（０．３５ｇ／ｍｉｎ）以下となった場合を第１の気化器ＶＰ１の閉塞と判断する。
そして、予備成膜原料導入系６を使用して成膜を続行する間、閉塞したメイン成膜原料導入系５の第１の気化器ＶＰ１について、有機溶媒としてオクタン（Ｃ8Ｈ18）によって洗浄するか、あるいは、新規の気化器と交換する等の復旧策を施す。 In the case of the present embodiment, the case where the flow rate in the first liquid flow meter LM1 is 0.7 times (0.35 g / min) or less than the set value (0.5 g / min) is the first vaporizer VP1. Judgment of blockage.
Then, while film formation is continued using the preliminary film formation raw material introduction system 6, the closed first vaporizer VP1 of the main film formation raw material introduction system 5 is washed with octane (C 8 H 18 ) as an organic solvent. Or take remedial measures such as replacing with a new vaporizer.

本発明に係る成膜装置の実施の形態の概略構成図Schematic configuration diagram of an embodiment of a film forming apparatus according to the present invention 同成膜装置の通常の場合の使用状態を示す説明図Explanatory drawing showing the normal use state of the film deposition system 同成膜装置においてメイン成膜原料導入系に異常が生じた場合の使用状態を示す説明図Explanatory drawing showing a use state when abnormality occurs in the main film forming material introduction system in the film forming apparatus 同成膜装置においてメイン真空排気系に異常が生じた場合の使用状態を示す説明図Explanatory drawing showing the usage state when an abnormality occurs in the main vacuum exhaust system in the film forming apparatus

符号の説明Explanation of symbols

１…成膜装置
２…真空処理槽
４…基板
５…メイン成膜原料導入系
６…予備成膜原料導入系
８…メイン真空排気系
９…予備真空排気系
８０…第１の真空排気ポンプ
９０…第２の真空排気ポンプ
ＶＰ１…第１の気化器
ＶＰ２…第２の気化器 DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus 2 ... Vacuum processing tank 4 ... Substrate 5 ... Main film-forming raw material introduction system 6 ... Preliminary film-forming raw material introduction system 8 ... Main vacuum exhaust system 9 ... Preliminary vacuum exhaust system 80 ... First vacuum exhaust pump 90 ... second evacuation pump VP1 ... first vaporizer VP2 ... second vaporizer

Claims (7)

ＣＶＤによって成膜を行う成膜装置であって、
真空排気系に接続された真空処理槽と、
成膜原料を気化器によって気化して前記真空処理槽内に導入する成膜原料導入系とを備え、
前記成膜原料導入系を複数有し、これら複数の成膜原料導入系が、前記真空処理槽内への成膜原料の導入状況に応じて切換可能に構成されている成膜装置。 A film forming apparatus for forming a film by CVD,
A vacuum treatment tank connected to a vacuum exhaust system;
A film forming raw material introduction system for vaporizing a film forming raw material by a vaporizer and introducing it into the vacuum processing tank;
A film forming apparatus comprising a plurality of film forming material introduction systems, wherein the plurality of film forming material introduction systems are switchable in accordance with the state of introduction of the film forming materials into the vacuum processing tank. 前記複数の成膜原料導入系が、主となるメイン成膜原料導入系と、当該メイン成膜原料導入系の正常動作時には待機状態にしておく予備成膜原料導入系を有する請求項１記載の成膜装置。   The plurality of film forming material introduction systems include a main main film forming material introduction system and a preliminary film forming material introduction system that is set in a standby state during normal operation of the main film forming material introduction system. Deposition device. 前記真空排気系を複数有し、これら複数の真空排気系が、前記真空処理槽内の雰囲気の排気状況に応じて切換可能に構成されている請求項１又は２のいずれか１項記載の成膜装置。   The composition according to any one of claims 1 and 2, wherein a plurality of the vacuum evacuation systems are provided, and the plurality of evacuation systems are configured to be switchable according to an exhaust state of an atmosphere in the vacuum processing tank. Membrane device. 前記複数の真空排気系が、主となるメイン真空排気系と、当該メイン真空排気系の正常動作時には待機状態にしておく予備真空排気系を有する請求項３記載の成膜装置。   The film forming apparatus according to claim 3, wherein the plurality of vacuum evacuation systems include a main main evacuation system and a preliminary evacuation system that is in a standby state when the main vacuum evacuation system operates normally. 請求項１乃至４いずれか１項記載の成膜装置を用い、成膜原料として有機金属を用いて成膜を行うＭＯ−ＣＶＤ方法。   An MO-CVD method using the film forming apparatus according to claim 1 to form a film using an organic metal as a film forming material. 使用中の一方の成膜原料導入系の気化器に異常が生じた場合に、前記一方の成膜原料導入系の運転を停止するとともに、他方の成膜原料導入系を運転させ、前記一方の成膜原料導入系の気化器の復旧作業を行う工程を有する請求項５記載のＭＯ−ＣＶＤ方法。   When an abnormality occurs in the vaporizer of one film forming raw material introduction system in use, the operation of the one film forming raw material introduction system is stopped and the other film forming raw material introduction system is operated, The MO-CVD method according to claim 5, further comprising a step of performing a recovery operation of the vaporizer of the film forming raw material introduction system. 前記気化器の復旧作業として、当該気化器を有機溶媒で洗浄する工程を有する請求項６記載のＭＯ−ＣＶＤ方法。   The MO-CVD method according to claim 6, further comprising a step of washing the vaporizer with an organic solvent as a recovery operation of the vaporizer.
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JP2011068920A (en) * 2009-09-24 2011-04-07 Nakata Coating Co Ltd Surface modification apparatus and surface modification method
WO2022181664A1 (en) * 2021-02-24 2022-09-01 株式会社Kokusai Electric Substrate processing device, substrate processing method, method for manufacturing semiconductor device, program, and exhaust system

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