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- JP2007287939A5 JP2007287939A5 JP2006113813A JP2006113813A JP2007287939A5 JP 2007287939 A5 JP2007287939 A5 JP 2007287939A5 JP 2006113813 A JP2006113813 A JP 2006113813A JP 2006113813 A JP2006113813 A JP 2006113813A JP 2007287939 A5 JP2007287939 A5 JP 2007287939A5
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- 238000005498 polishing Methods 0.000 claims description 269
- 238000001514 detection method Methods 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 34
- 239000002002 slurry Substances 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 claims description 6
- 230000008034 disappearance Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 225
- 239000000758 substrate Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 46
- 238000004140 cleaning Methods 0.000 description 25
- 230000035945 sensitivity Effects 0.000 description 23
- 238000012546 transfer Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 7
- 239000011630 iodine Substances 0.000 description 7
- 229910052740 iodine Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000003595 mist Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002341 toxic gas Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 ammonium ions Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Description
本発明は、研磨中の発生ガス検知する手段を備えた研磨方法、及び研磨装置に関し、特に半導体基板等の研磨に際し、発生する特定成分ガスを検知し、該特定成分ガスが毒性の高いガスである場合に速やかに有効な回避策が実施でき、該特定成分ガスの検知により半導体基板等の表面膜の研磨による平坦化ならびに化学的機械的研磨の終点を検知するのに好適な研磨方法、及び研磨装置に関するものである。 The present invention relates to a polishing method and a polishing apparatus provided with a means for detecting a generated gas during polishing, and in particular, detects a specific component gas generated when polishing a semiconductor substrate or the like, and the specific component gas is a highly toxic gas. A polishing method suitable for detecting the end point of planarization and chemical mechanical polishing of a surface film such as a semiconductor substrate by detecting the specific component gas can be implemented promptly in some cases, and The present invention relates to a polishing apparatus.
半導体デバイスの分野では、デバイスの高機能化に伴い、パターンの微細化と多層化が同時に進行している。多層化に係る加工技術においては、信頼性の高いデバイスを形成するために、例えば層間絶縁材料や金属配線材料を平坦に加工する必要がある。この各層における平坦性が確保されずに凹凸がある表面状態では、微細化の鍵となるリソグラフィー工程を実施すると、フォーカスずれを生じ、詳細なパターン形成が不可能となる。この課題解決のために、最近では半導体基板の表面に形成された膜を化学的・機械的に研磨して平坦化するケミカルメカニカルポリッシング（以下「ＣＭＰ」という）の技術が多用されるようになってきた。 In the field of semiconductor devices, miniaturization and multi-layering of patterns are progressing simultaneously with the advancement of device functionality. In a processing technique related to multilayering, for example, an interlayer insulating material or a metal wiring material needs to be processed flat in order to form a highly reliable device. In the surface state in which the flatness in each layer is not ensured and there is unevenness, if a lithography process that is a key to miniaturization is performed, a focus shift occurs and detailed pattern formation becomes impossible. In order to solve this problem, recently, a chemical mechanical polishing (hereinafter referred to as “CMP”) technique in which a film formed on the surface of a semiconductor substrate is chemically and mechanically polished to be flattened has been widely used. I came.
ＣＭＰによる膜の研磨除去に際しては、適正な厚さの膜を除去したとき（研磨の終点に達したとき）、研磨プロセスを停止させることが極めて重要である。膜を研磨除去しすぎると歩留まりの低下を招き、研磨除去が不足すると再度の研磨処理が必要となりコスト増加につながる。このため、膜の所望の厚さを除去し研磨を停止すべき研磨終点を正確に検知するために様々な手法が開発されてきた。 In polishing removal of a film by CMP, it is extremely important to stop the polishing process when a film having an appropriate thickness is removed (when the end point of polishing is reached). If the film is excessively removed by polishing, the yield will be reduced, and if the removal by polishing is insufficient, the polishing process will be required again, leading to an increase in cost. For this reason, various techniques have been developed to accurately detect the polishing end point at which the desired thickness of the film is removed and polishing should be stopped.
従来の終点検知方法には、（１）単純な研磨時間の管理により研磨終点を予測する研磨時間管理方法、（２）ターンテーブルやトップリングを回転駆動するモータ電流の変化により研磨終点を検知する方法、（３）静電容量の測定による膜厚を測定する方法、（４）光学的に膜厚を測定する光学式膜厚測定方法、（５）音響変化による膜を検知する音響式膜検知方法などがある。これらの従来の技術は、実時間監視ができない、その場での測定ができない、感度不足など固有の欠陥がある。また、微細化と多層化に伴い、平坦化に対するマージンが次第になくなってきており、より厳密に研磨終点を検知する必要がでてきている。そこで特許文献１乃至４に開示されているように、研磨反応そのものに係る化学物質の増減を検知し、研磨の終点とする方法が提案されている。
特許文献１では、研磨によって生じるスラリー廃液を研磨の進行に従って随時分析し、膜に含まれる特定成分が廃スラリーに溶出してくることをもって終点とすることを提案している。スラリー廃液を分析して研磨終点を検知する方法はこの他にも特許文献２、特許文献３など多数あるが、研磨反応によって発生する気体成分を検知する方法は数少ない。その一例として特許文献４に開示されたものがある。該特許文献４に開示されている研磨終点検知方法では、少なくとも研磨テーブル周りを遮蔽し、密閉された空間内で発生したガスを吸引検知することになり、実際の研磨装置への適用は困難である。 Patent Document 1 proposes that a slurry waste liquid generated by polishing is analyzed as needed in accordance with the progress of polishing, and that a specific component contained in the film is eluted into the waste slurry as an end point. There are many other methods, such as Patent Literature 2 and Patent Literature 3, for analyzing the slurry waste liquid and detecting the polishing end point, but there are few methods for detecting the gas component generated by the polishing reaction. One example is disclosed in Patent Document 4. In the polishing end point detection method disclosed in Patent Document 4, at least the periphery of the polishing table is shielded and the gas generated in the sealed space is detected by suction, so that it is difficult to apply to an actual polishing apparatus. is there.
本願発明は上述の点に鑑みてなされたもので、現実の研磨プロセス並びに研磨装置に適用できる化学的研磨終点検知技術を用いて被研磨物を研磨する研磨方法、及び研磨装置を提供することを目的とする。 The present invention has been made in view of the above points, and provides a polishing method and a polishing apparatus for polishing an object to be polished using a chemical polishing end point detection technique applicable to an actual polishing process and a polishing apparatus. Objective.
また、近年半導体デバイスに新たな材料が導入されたことにより、様々な研磨反応が採用されており、中には反応に伴う毒性の高いガスが発生する事例も見られている。しかしながら研磨装置自体はそのようなことを想定せずに設計されており、作業者の安全管理について必ずしも充分な配慮がなされていない状況にある。 In addition, various polishing reactions have been adopted in recent years due to the introduction of new materials in semiconductor devices, and in some cases, highly toxic gases are generated due to the reaction. However, the polishing apparatus itself is designed without assuming such a situation, and the safety management of the worker is not always considered sufficiently.
本願発明のもう一つの目的は、上記のように研磨に伴い発生する毒性の高いガスを速やかに検知し危険性に対して、有効な回避策が実施できる研磨方法、及び研磨装置を提供することにある。 Another object of the present invention is to provide a polishing method and a polishing apparatus capable of quickly detecting a highly toxic gas generated by polishing as described above and implementing an effective workaround against the danger. It is in.
上記課題を解決するため請求項１に記載の発明は、研磨テーブルの研磨面に被研磨物を押圧し、該被研磨物と研磨面の相対運動により該被研磨物を研磨する研磨方法において、前記研磨テーブルの研磨面直上にガスを吸引するガス吸引口を有するガス吸引管を設け、該ガス吸引口より該研磨面上の雰囲気ガスをガス検知器に吸引し、該雰囲気ガス中の特定成分ガスを監視しながら前記被研磨物を研磨することを特徴とする。 In order to solve the above problems, the invention according to claim 1 is a polishing method in which an object to be polished is pressed against a polishing surface of a polishing table, and the object to be polished is polished by relative movement of the object to be polished and the polishing surface. A gas suction pipe having a gas suction port for sucking gas is provided immediately above the polishing surface of the polishing table, and the atmospheric gas on the polishing surface is sucked into the gas detector from the gas suction port, and a specific component in the atmospheric gas The object to be polished is polished while monitoring the gas.
請求項２に記載の発明は、請求項１に記載の研磨方法において、前記特定ガスの生成又は消失を持って研磨の終点とすることを特徴とする。 According to a second aspect of the present invention, in the polishing method according to the first aspect, the end point of the polishing is determined by the generation or disappearance of the specific gas.
請求項３に記載の発明は、請求項１又は２に記載の研磨方法において、前記ガス吸引管のガス吸引口の開口部を前記研磨テーブルの研磨面から１００ｍｍ未満の高さ位置に設置したことを特徴とする。 According to a third aspect of the present invention, in the polishing method according to the first or second aspect, the opening of the gas suction port of the gas suction pipe is installed at a height position less than 100 mm from the polishing surface of the polishing table. It is characterized by.
また、請求項１乃至３のいずれか１項に記載の研磨方法においては、前記雰囲気ガスの吸引量が、毎分１０ｃｃ以上、１０Ｌ未満であることが好ましい。 In the polishing method according to any one of claims 1 to 3, the suction amount of the atmospheric gas is preferably 10 cc or more and less than 10 L per minute.
また、請求項１乃至３のいずれか１項に記載の研磨方法においは、前記ガス検知器の検出下限が、１ｐｐｍ以下、好ましくは０．１ｐｐｍ以下がよい。 In the polishing method according to any one of claims 1 to 3, the lower limit of detection of the gas detector is 1 ppm or less, preferably 0.1 ppm or less.
請求項４に記載の発明は、請求項１乃至３のいずれか１項に記載の研磨方法において、前記ガス検知器の検知部に対して、非検知中に新鮮な空気を供給することを特徴とする。 According to a fourth aspect of the present invention, in the polishing method according to any one of the first to third aspects, fresh air is supplied to the detection unit of the gas detector during non-detection. And
請求項５に記載の発明は、制御部の指示制御により、研磨テーブルの研磨面に被研磨物を押圧し、該被研磨物と研磨面の相対運動により該被研磨物を研磨する研磨装置において、前記研磨テーブルの研磨面直上にガスを吸引するガス吸引口を有するガス吸引管を設ける共に、特定成分ガスを検知するガス検知器を設け、前記ガス吸引口で雰囲気ガスを前記ガス検知器に吸引し、該雰囲気ガス中の特定成分ガスを検知できるようにしたことを特徴とする。 According to a fifth aspect of the present invention, there is provided a polishing apparatus that presses an object to be polished against a polishing surface of a polishing table by instruction control of a control unit, and polishes the object to be polished by relative movement between the object to be polished and the polishing surface. A gas suction pipe having a gas suction port for sucking gas is provided immediately above the polishing surface of the polishing table, a gas detector for detecting a specific component gas is provided, and atmospheric gas is supplied to the gas detector at the gas suction port. A specific component gas in the atmospheric gas can be detected by suction.
請求項６に記載の発明は、請求項５に記載の研磨装置において、前記制御部は、前記ガス検知器が前記特定ガスの検知又は非検知をもって研磨の終点とする機能を備えたことを特徴とする。 A sixth aspect of the present invention is the polishing apparatus according to the fifth aspect, wherein the control unit has a function in which the gas detector serves as a polishing end point by detecting or not detecting the specific gas. And
請求項７に記載の発明は、請求項５又は６に記載の研磨装置において、前記ガス吸引口の開口部を前記研磨テーブルの研磨面から１００ｍｍ未満の高さ位置に設置したことを特徴とする。 The invention according to claim 7 is the polishing apparatus according to claim 5 or 6, wherein the opening of the gas suction port is installed at a height position less than 100 mm from the polishing surface of the polishing table. .
また、請求項５乃至７のいずれか１項に記載の研磨装置においては、前記雰囲気ガスの吸引量が、毎分１０ｃｃ以上、１０Ｌ未満であることが好ましい。 In the polishing apparatus according to any one of claims 5 to 7, it is preferable that the suction amount of the atmospheric gas is 10 cc or more and less than 10 L per minute.
請求項５乃至７のいずれか１項に記載の研磨装置においては、前記ガス検知器の検知下限が、１ｐｐｍ以下であることが好ましい。より好ましくは０．１ｐｐｍ以下がよい。 In the polishing apparatus according to any one of claims 5 to 7, it is preferable that a detection lower limit of the gas detector is 1 ppm or less. More preferably, it is 0.1 ppm or less.
請求項８に記載の発明は、請求項４乃至７のいずれか１項に記載の研磨装置において、前記ガス検知器の検知部に対して、非検知中に新鮮な空気を供給する空気供給手段を備えたことを特徴とする。 The invention described in claim 8 is the polishing apparatus according to any one of claims 4 to 7, wherein the air supply means supplies fresh air to the detector of the gas detector during non-detection. It is provided with.
請求項９に記載の発明は、研磨テーブルの研磨面に被研磨物を押圧し、該被研磨物と研磨面の相対運動により該被研磨物を研磨する研磨装置において、被研磨物を保持するトップリングと、研磨テーブルの研磨面直上で且つ前記トップリング近傍にガスを吸引するガス吸引口を有するガス吸引管と、ガス吸引管に連通し、被研磨物の面に形成された膜とスラリーとの反応により発生し、該吸引されたガス中に含まれる特定成分を検知するガス検知器とを設けたことを特徴とする。The invention according to claim 9 holds the object to be polished in a polishing apparatus that presses the object to be polished against the polishing surface of the polishing table and polishes the object to be polished by relative movement of the object to be polished and the polishing surface. A top ring, a gas suction pipe having a gas suction port for sucking a gas immediately above the polishing surface of the polishing table and in the vicinity of the top ring, and a film and slurry formed on the surface of the workpiece to communicate with the gas suction pipe And a gas detector for detecting a specific component contained in the sucked gas.
より高濃度の検知対象成分を含む雰囲気ガスを吸引するため、被研磨物（基板等）に接近し、且つ該被研磨物の中心線上に位置するように設置したり、ミストを吸引しないようにガス吸引口を研磨テーブルの研磨面上の気流の方向と反対方向に設置するなどの対策を講じることが好ましい。また、ガス検知器に常時ガスを供給すると感度低下を生じる場合もあるので、検知を必要としない間はガス検知器のガス検知部が高濃度に検知対象成分を含む雰囲気ガスに曝されないようにガス吸引管のガス吸引口を研磨テーブルの研磨面上から退避できるように、可動としてもよい。 In order to suck in atmospheric gas containing a higher concentration of detection target component, it should be placed close to the object to be polished (substrate etc.) and located on the center line of the object to be polished, or mist should not be sucked It is preferable to take measures such as installing the gas suction port in a direction opposite to the direction of the airflow on the polishing surface of the polishing table. Also, if gas is constantly supplied to the gas detector, the sensitivity may decrease, so that the gas detector of the gas detector should not be exposed to atmospheric gas containing the detection target component at a high concentration while detection is not required. The gas suction port of the gas suction tube may be movable so that it can be retracted from the polishing surface of the polishing table.
ガス吸引口からガス検知器に吸引する雰囲気ガスの流量を大量にすると、かえって希釈効果により、検知対象である特定のガス状物質の濃度が低下し検知感度が低下する。一方流量が少ないとガス吸引口からガス検知器に到達するまでの時間が掛かり、検知精度が得られない。ガス吸引口から吸引ガスラインを通ってガス検知に達する距離にもよるが、雰囲気ガスの吸引量を毎分１０ｃｃ以上、１Ｌ未満とすることにより、検知感度が低下することなく、且つ高い検知精度が得られる。 If the flow rate of the atmospheric gas sucked from the gas suction port to the gas detector is increased, the concentration of a specific gaseous substance to be detected is lowered due to the dilution effect, and the detection sensitivity is lowered. On the other hand, if the flow rate is small, it takes time to reach the gas detector from the gas suction port, and detection accuracy cannot be obtained. Although depending on the distance from the gas suction port to the gas detection through the suction gas line, the detection sensitivity is not lowered and the detection accuracy is high by setting the atmospheric gas suction amount to 10 cc or more and less than 1 liter per minute. Is obtained.
吸引ガスラインの内径は１０ｍｍ以下、好ましくは５ｍｍ以下であることが望ましい。また、ガス吸引口からガス検知器までの吸引ガスラインの距離は、２ｍ以下、好ましくは５０ｃｍ以下であることが望ましい。 The inner diameter of the suction gas line is 10 mm or less, preferably 5 mm or less. The distance of the suction gas line from the gas suction port to the gas detector is 2 m or less, preferably 50 cm or less.
ガス検知器の検出下限が、１ｐｐｍ以下とすることにより、研磨反応によって発生する特定のガス状成分を感度よく検出することが可能となる。 By setting the detection lower limit of the gas detector to 1 ppm or less, a specific gaseous component generated by the polishing reaction can be detected with high sensitivity.
ガス検知器としては電気化学式、検知テープ式、熱伝導度式、化学光学式、赤外線吸収式などの方法によるものがあるが、検知対象であるガス状成分に応じてこれらの中から適切なものを選択すればよい。 Gas detectors include those using electrochemical methods, detection tape methods, thermal conductivity methods, chemical optical methods, infrared absorption methods, etc., but those that are appropriate are selected according to the gaseous components to be detected. Should be selected.
雰囲気ガスの吸引量が、毎分１０ｃｃ以上、１０Ｌ未満とすることにより、ガス検知器の検知感度が低下することなく、且つ高い検知精度が得られる。 By setting the atmospheric gas suction amount to 10 cc or more and less than 10 L per minute, the detection sensitivity of the gas detector is not lowered and high detection accuracy is obtained.
また、ガス検知器の検知下限を、１ｐｐｍ以下とすることにより、研磨反応によって発生する特定のガス状成分を感度よく検出することが可能となる。 Further, by setting the lower limit of detection of the gas detector to 1 ppm or less, it becomes possible to detect a specific gaseous component generated by the polishing reaction with high sensitivity.
請求項１に記載の発明によれば、研磨テーブルの研磨面直上に設置したガス吸引管のガス吸引口から雰囲気ガスをガス検知器に吸引し、検知対象成分、即ち特定成分ガスを監視しながら研磨するので、特定成分ガスを高感度で検知でき、被研磨物を複数の膜が積層形成された基板とした場合は、現在研磨中の膜種を特定することが可能となる。また、毒性の高いガスの発生を速やかに検出できるから、危険を回避する対策等を速やかに実施できる。 According to the first aspect of the present invention, the atmospheric gas is sucked into the gas detector from the gas suction port of the gas suction pipe installed immediately above the polishing surface of the polishing table, and the detection target component, that is, the specific component gas is monitored. Since the polishing is performed, the specific component gas can be detected with high sensitivity, and when the object to be polished is a substrate on which a plurality of films are laminated, it is possible to specify the film type currently being polished. In addition, since the generation of highly toxic gas can be detected quickly, measures to avoid danger can be implemented promptly.
なお、上記雰囲気ガス中の特定成分としては、スラリー中の化学物質、研磨対象膜の構成成分、或いはその両方に起因するものがあるが、そのいずれによることも可能である。 The specific component in the atmospheric gas may be caused by a chemical substance in the slurry, a constituent component of the film to be polished, or both, and any of them may be used.
請求項２に記載の発明によれば、被研磨物を複数の膜が積層形成された基板とした場合は、研磨中の膜が研磨除去された場合、該研磨対象膜とスラリーとの化学反応で発生する特定のガス状物質が急激に消失すると共に、直下の新たな膜が研磨対象膜になると該研磨対象膜とスラリーとの化学反応で発生する特定のガス状物質が急激に生成されるから、この特定ガス状物質の消失又は生成を検出することにより、研磨終点を適確に検出することが可能となる。 According to the invention described in claim 2, when the object to be polished is a substrate on which a plurality of films are laminated, when the film being polished is removed by polishing, the chemical reaction between the film to be polished and the slurry When the specific gaseous substance generated in the process disappears rapidly, and the new film immediately below becomes the polishing target film, the specific gaseous substance generated by the chemical reaction between the polishing target film and the slurry is rapidly generated. From this, it is possible to accurately detect the polishing end point by detecting the disappearance or generation of the specific gaseous substance.
請求項３に記載の発明に記載の発明によれば、ガス吸引口の開口部を研磨テーブルの研磨面から１００ｍｍ未満の高さ位置に設置したことにより、高濃度の検知対象成分を含む雰囲気ガスを吸引できる。研磨テーブルの研磨面直上に設置するガス吸引管のガス吸引口は、できる限り高濃度の検知対象成分を含む雰囲気ガスを吸引するため、該研磨面に接近させる必要がある。一方で余り近すぎてもパーティクルやミストを吸い込んで、ガス吸引管の閉塞や感度低下を招くなどの恐れがある。 According to the invention described in claim 3, the atmosphere gas containing the high concentration detection target component by installing the opening of the gas suction port at a height position less than 100 mm from the polishing surface of the polishing table. Can be sucked. The gas suction port of the gas suction pipe installed immediately above the polishing surface of the polishing table needs to be close to the polishing surface in order to suck the atmospheric gas containing the detection target component as high as possible. On the other hand, if it is too close, particles or mist may be sucked into the gas suction tube and cause a decrease in sensitivity.
請求項４に記載の発明によれば、ガス検知器の検知部に対して、非検知中に新鮮な空気を供給するので、ガス検知器の検知部が長時間にわたってガス吸引管中の高濃度に検出対象成分を含むガスに暴露されることなく、感度低下を招くことがない。研磨終点の検知を特定の成分ガスの発生により行おうとする場合には、ガス吸引口すらガス検知器まで雰囲気ガスを吸引するため、終点検知後もガス吸引管中に高濃度のガスが滞留することになり、長時間にわたる暴露によるガス検知器の感度低下を招くことがある。なお、発生ガス検知を安全管理用に使用する場合は比較的高濃度のガスに長時間暴露させる可能性があるが、その場合には検知期間中にサンプルガスを適宜新鮮な空気と切り替え、感度劣化が起こらないよう非検知期間を挿入しても良い。 According to the fourth aspect of the present invention, since fresh air is supplied to the detector of the gas detector during non-detection, the detector of the gas detector has a high concentration in the gas suction pipe for a long time. In addition, the sensitivity is not lowered without being exposed to the gas containing the detection target component. When the detection of the polishing end point is to be performed by the generation of a specific component gas, the atmosphere gas is sucked up to the gas detector even at the gas suction port, so that a high concentration gas remains in the gas suction pipe even after the end point is detected. In other words, the sensitivity of the gas detector may be reduced by long-term exposure. When the generated gas detection is used for safety management, it may be exposed to a relatively high concentration gas for a long time. In this case, the sample gas is switched to fresh air as needed during the detection period, and the sensitivity A non-detection period may be inserted so that deterioration does not occur.
請求項５に記載の発明によれば、研磨テーブルの研磨面直上にガス吸引管のガス吸引口を設け、該ガス吸引管で雰囲気ガスをガス検知器に吸引し、該雰囲気ガス中の特定成分ガスを検知できるようにしたので、請求項１に記載の発明と同様、特定成分ガスを高感度で検知でき、被研磨物を複数の膜が積層形成された基板とした場合は、現在研磨中の膜種を特定することが可能となる。また、毒性の高いガスの発生を速やかに検出できるから、危険を回避する対策等を速やかに実施できる。 According to the fifth aspect of the present invention, the gas suction port of the gas suction tube is provided immediately above the polishing surface of the polishing table, the atmospheric gas is sucked into the gas detector by the gas suction tube, and the specific component in the atmospheric gas Since the gas can be detected, the specific component gas can be detected with high sensitivity and the object to be polished is a substrate on which a plurality of films are formed. It is possible to specify the film type. In addition, since the generation of highly toxic gas can be detected quickly, measures to avoid danger can be implemented promptly.
請求項６に記載の発明によれば、制御部は、ガス検知器が特定ガスの検知又は非検知をもって研磨の終点とする機能を備えたので、請求項２に記載の発明と同様、特定ガス状物質の消失又は生成を検出することにより、研磨終点を適確に検知することが可能となる。 According to the invention described in claim 6, since the gas detector has a function of setting the end point of polishing by detecting or non-detecting the specified gas, the control unit has the specified gas as in the invention described in claim 2. By detecting the disappearance or generation of the particulate matter, it is possible to accurately detect the polishing end point.
請求項７に記載の発明によれば、ガス吸引口の開口部を研磨テーブルの研磨面から１００ｍｍ未満の高さ位置に設置したので、請求項３に記載の発明と同様、ガス検知器に高濃度の検知対象成分を含む雰囲気ガスを吸引できると共に、パーティクルやミストを吸い込んで、ガス吸引管の閉塞や感度低下を招くなどの恐れがない。 According to the invention described in claim 7, since the opening of the gas suction port is installed at a height position less than 100 mm from the polishing surface of the polishing table, the gas detector has a high height as in the invention described in claim 3. Atmospheric gas containing a concentration detection target component can be sucked, and particles and mist are sucked in, so that there is no fear that the gas suction pipe is blocked or the sensitivity is lowered.
請求項８に記載の発明によれば、ガス検知器の検知部に対して、非検知中に新鮮な空気を供給する空気供給手段を備えたので、請求項４に記載の発明と同様、ガス検知器の検知部が長時間にわたってガス吸引管中の高濃度に検知対象成分を含むガスに暴露されることなく、感度低下を招くことがない。 According to the eighth aspect of the invention, since the air supply means for supplying fresh air during the non-detection is provided to the detection unit of the gas detector, the gas is provided in the same manner as the fourth aspect. The detection part of the detector is not exposed to the gas containing the detection target component at a high concentration in the gas suction pipe for a long time, and the sensitivity is not lowered.
請求項９に記載の発明によれば、研磨テーブルの研磨面直上で且つトップリング近傍にガスを吸引するガス吸引口を有するガス吸引管と、ガス吸引管に連通し、被研磨物の面に形成された膜とスラリーとの反応により発生し、該吸引されたガス中に含まれる特定成分を検知するガス検知器とを設けたので、ガス検知器で研磨中に被研磨物の面に形成された膜とスラリーとの反応により発生し、吸引されたガス中に含まれる特定成分を検知し、被研磨物の研磨状況、即ち現在研磨中の膜がどの膜で、それか終了点にあるか否かを把握できる研磨装置を提供できる。According to the ninth aspect of the present invention, a gas suction pipe having a gas suction port for sucking a gas immediately above the polishing surface of the polishing table and in the vicinity of the top ring, and a gas suction pipe communicated with the surface of the object to be polished. A gas detector that detects specific components contained in the sucked gas that is generated by the reaction between the formed film and the slurry is provided, so it is formed on the surface of the workpiece during polishing with the gas detector. Detects a specific component contained in the sucked gas that is generated by the reaction between the film and the slurry, and the polishing status of the object to be polished, that is, the film currently being polished, is at the end point. It is possible to provide a polishing apparatus that can grasp whether or not.
以下、本発明の実施の形態例を図面に基づいて説明する。図１及び図２は本発明に係る研磨装置の構成例を示す図で、図１は研磨装置全体の平面図、図２は右側研磨室の側面図である。本研磨装置は表面に複数の膜が積層形成された半導体基板を研磨する基板研磨装置を示す。基板研磨装置１００は右側研磨室１０１、左側研磨室１０２、洗浄室１０３、搬送室１０４、ロード／アンロード室１０５を備えている。右側研磨室１０１及び左側研磨室１０２には夫々研磨テーブル１１、１１が配置され、該右側研磨室１０１及び左側研磨室１０２の下方の室１０６には研磨テーブル１１、１１を駆動するテーブル駆動モータ２４、２４が配置されている。 Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are diagrams showing an example of the configuration of a polishing apparatus according to the present invention. FIG. 1 is a plan view of the entire polishing apparatus, and FIG. 2 is a side view of a right polishing chamber. This polishing apparatus is a substrate polishing apparatus for polishing a semiconductor substrate having a plurality of films laminated on the surface. The substrate polishing apparatus 100 includes a right polishing chamber 101, a left polishing chamber 102, a cleaning chamber 103, a transfer chamber 104, and a load / unload chamber 105. The right polishing chamber 101 and the left polishing chamber 102 are respectively provided with polishing tables 11, 11. A table driving motor 24 that drives the polishing tables 11, 11 is provided in a chamber 106 below the right polishing chamber 101 and the left polishing chamber 102. , 24 are arranged.
右側研磨室１０１には、トップリングアーム１２に回転自在に支承されたトップリング１３、ドレッサーアーム１４に回転自在に支承されたドレッサー１５、バフテーブル１６、リニアトランスポータ１７、プッシャー１８、リフター１９、反転機２０、ドレッサー待機台２１が配置されている。また、左側研磨室１０２にも同様に、トップリングアーム１２に回転自在に支承されたトップリング１３、ドレッサーアーム１４に回転自在に支承されたドレッサー１５、バフテーブル１６、リニアトランスポータ１７、プッシャー１８、リフター１９、反転機２０、ドレッサー待機台２１が配置されている。なお、ドレッサー待機台２１は待機状態にあるドレッサー１５を湿潤状態にしておくため、純水等の液を収容した容器としてもよい。 The right polishing chamber 101 includes a top ring 13 rotatably supported on the top ring arm 12, a dresser 15 rotatably supported on the dresser arm 14, a buff table 16, a linear transporter 17, a pusher 18, a lifter 19, A reversing machine 20 and a dresser stand 21 are arranged. Similarly, in the left polishing chamber 102, a top ring 13 rotatably supported by the top ring arm 12, a dresser 15 rotatably supported by the dresser arm 14, a buff table 16, a linear transporter 17, and a pusher 18 are also provided. A lifter 19, a reversing machine 20, and a dresser stand 21 are arranged. The dresser stand 21 may be a container containing a liquid such as pure water in order to keep the dresser 15 in a standby state wet.
トップリング１３はトップリングアーム１２の先端部に回転自在に支承され、該トップリングアーム１２内に収容配置されたモータ（図示せず）により矢印Ａ（図３参照）方向に回転するようになっている。トップリングアーム１２は支持棒２２の上端に固定され、昇降・旋回機構２３により、昇降矢印Ｃ（図２参照）に示すように及び旋回できるようになっており、これによりトップリング１３も同じく昇降及び旋回し、旋回によりプッシャー１８、研磨テーブル１１の研磨面１１ａ、バフテーブル１６の間を移動できるようになっている。 The top ring 13 is rotatably supported at the tip of the top ring arm 12 and is rotated in the direction of arrow A (see FIG. 3) by a motor (not shown) accommodated in the top ring arm 12. ing. The top ring arm 12 is fixed to the upper end of the support bar 22, and can be swung as shown by the raising / lowering arrow C (see FIG. 2) by the raising / lowering / swinging mechanism 23, whereby the top ring 13 is also raised and lowered. And it can be moved between the pusher 18, the polishing surface 11 a of the polishing table 11, and the buffing table 16 by turning.
なお、図示は省略するが、ドレッサーアーム１４もトップリングアーム１２と同様、支持棒の上端に固定され、昇降・旋回機構により昇降及び旋回できるようになっており、旋回によりドレッサー１５を研磨テーブルの研磨面１１ａの上方から待機位置にあるドレッサー待機台２１の上方及びその反対に移動させ、昇降によりドレッサー１５を研磨面１１ａから離間又は当接させ、ドレッサー待機台２１から離間又は収容できるようになっている。 Although not shown in the figure, the dresser arm 14 is also fixed to the upper end of the support bar and can be moved up and down by a lifting and turning mechanism similarly to the top ring arm 12, and the dresser 15 is moved to the polishing table by turning. The dresser 15 is moved from the upper surface of the polishing surface 11a to the upper position of the dresser standby table 21 in the standby position and vice versa, and the dresser 15 is separated or brought into contact with the polishing surface 11a by raising and lowering. ing.
洗浄室１０３の右側には第１洗浄槽３１、第２洗浄槽３２が配置され、左側には同様に、第１洗浄槽３３、第２洗浄槽３４が配置されている。第１洗浄槽３１と第１洗浄槽３３の間にはロボット等の搬送装置３５、３６が配置され、第２洗浄槽３２と第２洗浄槽３４の間には基板仮置台３７が配置されている。搬送室１０４内にはロボット等の搬送装置４０が配置されている。また、ロード／アンロード室１０５には、基板収納用カセット４１乃至４４が配置されている。 A first cleaning tank 31 and a second cleaning tank 32 are disposed on the right side of the cleaning chamber 103, and a first cleaning tank 33 and a second cleaning tank 34 are similarly disposed on the left side. Transfer devices 35 and 36 such as robots are arranged between the first cleaning tank 31 and the first cleaning tank 33, and a temporary substrate mounting table 37 is arranged between the second cleaning tank 32 and the second cleaning tank 34. Yes. A transfer device 40 such as a robot is arranged in the transfer chamber 104. In the load / unload chamber 105, substrate storage cassettes 41 to 44 are arranged.
上記構成の研磨装置の動作を説明する。先ず搬送装置４０で被研磨基板を基板収納用カセット４１乃至４４のいずれかから取り出し、基板仮置台３７へ載置する。搬送装置３５（又は３６）で基板仮置台３７から被研磨基板を取り、右側研磨室１０１（又は左側研磨室１０２）の反転機２０に渡す。該反転機２０で反転した被研磨基板をリフター１９が受け取り、リニアトランスポータ１７に渡す。リニアトランスポータ１７は受け取った被研磨基板を水平に移動し、プッシャー１８上に載置する。この状態でトップリング１３をプッシャー１８上方に旋回移動させる。 The operation of the polishing apparatus having the above configuration will be described. First, the substrate to be polished is taken out from any of the substrate storage cassettes 41 to 44 by the transfer device 40 and placed on the temporary substrate table 37. The substrate to be polished is taken from the temporary substrate table 37 by the transfer device 35 (or 36) and transferred to the reversing machine 20 in the right polishing chamber 101 (or left polishing chamber 102). The lifter 19 receives the substrate to be polished that has been reversed by the reversing machine 20 and passes it to the linear transporter 17. The linear transporter 17 moves the received substrate to be polished horizontally and places it on the pusher 18. In this state, the top ring 13 is pivoted and moved above the pusher 18.
トップリング１３はプッシャー１８により所定の高さ位置に押し上げられた被処理基板を真空吸着して受け取り、該被処理基板を保持した状態で研磨テーブル１１の研磨面１１ａの研磨位置まで旋回移動した後、下降し被処理基板を矢印Ｂ方向に回転する研磨テーブル１１の研磨面（研磨テーブル１１の上面に貼り付けた研磨パッド面）１１ａに当接し、所定の圧力で押圧し、研磨面１１ａと被研磨基板Ｗの相対的運動により被研磨基板Ｗの面（膜面）を研磨する。研磨後の被研磨基板は、再びプッシャー１８上に移送され、該プッシャー上に載置される。なお、被研磨基板の研磨中は該被研磨基板の真空吸着を解除してもよい。また、研磨後の被研磨基板はバフテーブル１６で仕上げ研磨を行うこともある。この場合は、トップリング１３は仕上げ研磨後の被研磨基板をプッシャー１８上に移送し、載置する。 The top ring 13 receives the substrate to be processed, which has been pushed up to a predetermined height by the pusher 18 by vacuum suction, and swivels to the polishing position of the polishing surface 11a of the polishing table 11 while holding the substrate to be processed. Then, the substrate is brought into contact with the polishing surface 11a of the polishing table 11 (the polishing pad surface affixed to the upper surface of the polishing table 11) 11a which is lowered and rotates in the direction of arrow B, and is pressed with a predetermined pressure. The surface (film surface) of the substrate to be polished W is polished by the relative movement of the polishing substrate W. The polished substrate after polishing is again transferred onto the pusher 18 and placed on the pusher. Note that the vacuum suction of the substrate to be polished may be released during the polishing of the substrate to be polished. Further, the polished substrate may be subjected to finish polishing with the buffing table 16. In this case, the top ring 13 transfers the substrate to be polished after finish polishing onto the pusher 18 and places it thereon.
プッシャー１８上に載置された被研磨基板はリニアトランスポータ１７で反転機２０に移送され、該反転機２０で反転させられた後、搬送装置３５（又は３６）で洗浄室１０３の右側の第１洗浄槽３１（又は左側の第１洗浄槽３３）に搬送され、ここで例えばロールスポンジにより、被研磨基板の両面を洗浄する。洗浄後、搬送装置３５（又は３６）により、第２洗浄槽３２（又は第２洗浄槽３４）に搬送する。ここで被処理基板を洗浄した後、乾燥させる。洗浄乾燥された後の被処理基板は搬送装置４０により基板収納用カセット４１乃至４４のいずれかに戻される。なお、前記被研磨基板の研磨が終了するとドレッサー１５が研磨テーブル１１の研磨面１１ａの上方に旋回移動し、降下し、該研磨面１１ａに当接し、該研磨面１１ａをドレッシングする。なお、研磨装置の上記一連の動作は図示しない制御部の指示制御により行なう。 The substrate to be polished placed on the pusher 18 is transferred to the reversing machine 20 by the linear transporter 17, reversed by the reversing machine 20, and then transferred to the right side of the cleaning chamber 103 by the transfer device 35 (or 36). It is transferred to one cleaning tank 31 (or the first cleaning tank 33 on the left side), where both surfaces of the substrate to be polished are cleaned with, for example, a roll sponge. After the cleaning, it is transferred to the second cleaning tank 32 (or the second cleaning tank 34) by the transfer device 35 (or 36). Here, the substrate to be processed is cleaned and then dried. The substrate to be processed after being cleaned and dried is returned to one of the substrate storage cassettes 41 to 44 by the transfer device 40. When the polishing of the substrate to be polished is completed, the dresser 15 pivots and moves upward above the polishing surface 11a of the polishing table 11, contacts the polishing surface 11a, and dresses the polishing surface 11a. The series of operations of the polishing apparatus is performed by instruction control of a control unit (not shown).
右側研磨室１０１の研磨テーブル１１の研磨面１１ａには図２及び図３に示すように、スラリーを供給するスラリー供給ノズル５０、純水等の液や液とガスの混合体を供給すると液供給ノズル５１が配置されている。更に研磨テーブル１１の研磨面１１ａの被研磨基板Ｗの中心が移動する軌跡Ｄ上方でトップリング１３の外周近傍で研磨テーブル１１の回転下流側（矢印Ｂ方向側）には、雰囲気ガスを吸引するガス吸引口５２ａを有するガス吸引パイプ５２が配置され、該ガス吸引パイプ５２で吸引された雰囲気ガスはガス検知器５３に導かれるようになっている。なお、図示は省略するが、左側研磨室１０２にも同様に、スラリー供給ノズル５０、液供給ノズル５１、ガス吸引パイプ５２、ガス検知器５３が設けられている。 As shown in FIG. 2 and FIG. 3, a slurry supply nozzle 50 for supplying slurry and a liquid such as pure water or a mixture of liquid and gas are supplied to the polishing surface 11a of the polishing table 11 of the right polishing chamber 101. A nozzle 51 is disposed. Further, the atmospheric gas is sucked to the rotation downstream side (arrow B direction side) of the polishing table 11 near the outer periphery of the top ring 13 above the locus D where the center of the substrate to be polished W moves on the polishing surface 11a of the polishing table 11. A gas suction pipe 52 having a gas suction port 52 a is disposed, and the atmospheric gas sucked by the gas suction pipe 52 is guided to the gas detector 53. Although not shown, the left polishing chamber 102 is similarly provided with a slurry supply nozzle 50, a liquid supply nozzle 51, a gas suction pipe 52, and a gas detector 53.
スラリー供給ノズル５０から研磨テーブル１１の研磨面１１ａにスラリーを供給すると共に、トップリング１３で保持する被研磨基板Ｗを研磨面１１ａに押圧し、被研磨基板Ｗの面に形成された膜を研磨する。その際、膜とスラリーが反応し、特定成分ガスを発生する。この特定成分ガスは、後に詳述するように、膜の種類とスラリーの種類により異なるから、スラリーの成分が分かっていると、雰囲気ガス中に特定成分ガスが含まれていると、この特定ガス成分から研磨中の膜を特定できる。即ち、ガス検知器５３で雰囲気ガス中にこの特定成分ガスが含まれている否かを監視し、特定成分ガスを検知することで、現在研磨中の膜の膜種を特定できる。また、その特定成分ガスの消滅により、この膜が研磨除去されたことが分かる。また、新たに特定ガス成分を検出することにより、現在研磨中の膜が研磨除去され、その真下の異種の膜の研磨に移行したことを検知できる。なお、上記監視・検知はガス検知器５３の出力信号により研磨装置の制御部が行い、この監視・検知により各部を指示制御する。 The slurry is supplied from the slurry supply nozzle 50 to the polishing surface 11a of the polishing table 11, and the target substrate W held by the top ring 13 is pressed against the polishing surface 11a to polish the film formed on the surface of the target substrate W. To do. At that time, the membrane and the slurry react to generate a specific component gas. As will be described in detail later, this specific component gas differs depending on the type of film and the type of slurry. Therefore, if the component of the slurry is known, if the specific component gas is contained in the atmospheric gas, this specific gas The film being polished can be identified from the components. That is, by monitoring whether or not the specific component gas is contained in the atmospheric gas by the gas detector 53 and detecting the specific component gas, the film type of the film currently being polished can be specified. It can also be seen that the film was polished and removed by the disappearance of the specific component gas. Further, by newly detecting a specific gas component, it can be detected that the film currently being polished has been removed by polishing, and the transition to the polishing of a different kind of film immediately below has been made. The monitoring / detection is performed by the control unit of the polishing apparatus based on the output signal of the gas detector 53, and each unit is instructed and controlled by this monitoring / detection.
研磨テーブル１１の研磨面１１ａ直上に設置するガス吸引パイプ５２のガス吸引口５２ａは、できる限り高濃度の検知対象成分を含む雰囲気ガスを吸引させるため、該研磨面に接近させる必要がある。一方で余り近すぎてもパーティクルやミストを吸い込んで、ガス吸引パイプ５２の閉塞やガス検知器５３の感度の低下を招くなどの恐れがある。そこで、図４に示すように、ガス吸引パイプ５２のガス吸引口２５ａと研磨テーブル１１の研磨面１１ａからの距離Ｅを１００ｍｍ未満とする。これにより高濃度の検知対象成分を含む雰囲気ガスＧを吸引できると共に、パーティクルやミストを吸い込んで、ガス吸引パイプ５２の閉塞やガス検知器５３の感度低下を回避できる。 The gas suction port 52a of the gas suction pipe 52 installed immediately above the polishing surface 11a of the polishing table 11 needs to be close to the polishing surface in order to suck the atmospheric gas containing the detection target component as high as possible. On the other hand, even if it is too close, particles or mist may be sucked in, which may cause the gas suction pipe 52 to be blocked or the sensitivity of the gas detector 53 to be lowered. Therefore, as shown in FIG. 4, the distance E from the gas suction port 25a of the gas suction pipe 52 and the polishing surface 11a of the polishing table 11 is set to less than 100 mm. Thereby, the atmospheric gas G containing a high concentration detection target component can be sucked, and particles and mist can be sucked to prevent the gas suction pipe 52 from being blocked and the gas detector 53 from being lowered in sensitivity.
なお、図５に示すように、ガス吸引パイプ５２の下端にナイロン等の合成樹脂からなるブラシ、若しくは柔軟性のある合成樹脂材料で形成されたガス導入部材５４を取り付けてもよい。このように構成することにより、ブラシ又は空気導入部材を研磨面１１ａに限りなく近づけるか接触させることが可能となり、また、研磨面１１ａの直上の雰囲気ガスを確実にガス吸引パイプ５２に導入することができる。 As shown in FIG. 5, a brush made of synthetic resin such as nylon or a gas introduction member 54 formed of a flexible synthetic resin material may be attached to the lower end of the gas suction pipe 52. With this configuration, the brush or the air introducing member can be brought close to or in contact with the polishing surface 11a as much as possible, and the atmospheric gas immediately above the polishing surface 11a can be reliably introduced into the gas suction pipe 52. Can do.
高濃度の検知対象成分を含む雰囲気ガスＧを吸引するため、ガス吸引パイプ５２のガス吸引口５２ａを被研磨物Ｗに接近し、且つ被研磨基板Ｗの中心が移動する軌跡Ｄ上方で、更にミストを吸引しないように研磨テーブル１１の研磨面１１ａ上の気流の方向と反対方向（研磨テーブル１１の回転下流側、即ち矢印Ｂ方向側）に設置するなどの対策を講じることが好ましい。また、ガス検知器５３に常時ガスを供給する後に詳述するように感度低下を生じる場合もあるので、検知を必要としない間はガス吸引パイプ５２のガス吸引口５２ａを研磨テーブル１１の研磨面１１ａ上から退避し、新鮮な空気を吸引できるようにし、研磨終点の直前に研磨面１１ａ上の雰囲気空気Ｇを吸引できる位置（図３のＦ範囲）に移動するとよい。 In order to suck the atmospheric gas G containing the high concentration detection target component, the gas suction port 52a of the gas suction pipe 52 is brought close to the object to be polished W, and further above the locus D where the center of the substrate to be polished W moves. It is preferable to take measures such as installing in the direction opposite to the direction of the airflow on the polishing surface 11a of the polishing table 11 (on the downstream side of the rotation of the polishing table 11, that is, the arrow B direction) so as not to suck the mist. Further, since sensitivity may be lowered as will be described in detail after the gas is constantly supplied to the gas detector 53, the gas suction port 52a of the gas suction pipe 52 is connected to the polishing surface of the polishing table 11 while detection is not required. It is good to move away from 11a so that fresh air can be sucked and moved to a position (F range in FIG. 3) where the atmospheric air G on the polishing surface 11a can be sucked just before the polishing end point.
ガス吸引口５２ａからガス検知器５３に吸引する雰囲気ガスＧの流量を大量にすると、かえって希釈効果により、検知対象である特定成分のガス状物質の濃度が低下し検知感度が低下する。一方流量が少ないとガス吸引口５２ａからガス検知器５３に到達するまでの時間が掛かり、検知精度が得られない。ここでは、吸引パイプ５２でのガス吸引量を毎分１０ｃｃ以上、１Ｌ未満が望ましい。ガス吸引口５２ａからガス吸引パイプ５２を通ってガス検知器５３に達する距離にもよるが、より好ましくは、雰囲気ガスＧの吸引量を毎分１０ｃｃ以上、１００ｃｃ未満とすることにより、検知感度が低下することなく、且つより高い検知精度が得られる。 If the flow rate of the atmospheric gas G sucked into the gas detector 53 from the gas suction port 52a is increased, the concentration of the gaseous substance of the specific component that is the detection target is lowered due to the dilution effect, and the detection sensitivity is lowered. On the other hand, if the flow rate is small, it takes time to reach the gas detector 53 from the gas suction port 52a, and detection accuracy cannot be obtained. Here, the amount of gas sucked by the suction pipe 52 is preferably 10 cc or more and less than 1 L per minute. Although depending on the distance from the gas suction port 52a to the gas detector 53 through the gas suction pipe 52, more preferably, the detection sensitivity is improved by setting the suction amount of the atmospheric gas G to 10 cc or more and less than 100 cc per minute. Higher detection accuracy can be obtained without deteriorating.
なお、ガス吸引パイプ５２の内径は１０ｍｍ以下、好ましくは５ｍｍ以下であることが望ましい。また、ガス吸引口５２ａからガス検知器５３までのガス吸引パイプ５２の距離は、２ｍ以下、好ましくは５０ｃｍ以下とする。 The inner diameter of the gas suction pipe 52 is 10 mm or less, preferably 5 mm or less. The distance of the gas suction pipe 52 from the gas suction port 52a to the gas detector 53 is 2 m or less, preferably 50 cm or less.
タングステン膜が形成された被研磨基板Ｗをヨウ素酸系酸性スラリーで酸化しつつシリカ砥粒で研磨する場合には、下記の反応でヨウ素ガスが発生する。
５Ｗ＋６ＫＩＯ3＋３Ｈ2Ｏ→ ５ＷＯ3＋３Ｉ2＋６ＫＯＨ
膜の研磨速度が毎分１００ｎｍ程度であるので、被研磨基板Ｗの径が３００ｍｍであれば、ヨウ素ガスの発生は、毎分２．２２ｍＬに相当する。この研磨条件において、内径４ｍｍ、長さ１ｍのテフロン（登録商標）チューブをガス吸引パイプ５２として用い、そのガス吸引口５２ａを研磨テーブル１１の研磨面１１ａの上方５ｍｍの位置で、被研磨基板Ｗの中心が移動する軌跡Ｄの位置に配置し、毎分０．８Ｌの流量の雰囲気ガスＧをガス検知器５３に導き（図３、図４参照）、ヨウ素ガスの発生を監視した。ガス検知器５３には、定電位電解式ガス検知器（理研計器（株）製ＳＣ−９０）を用いた。
When the substrate to be polished W on which the tungsten film is formed is polished with silica abrasive grains while being oxidized with an iodic acid-based acidic slurry, iodine gas is generated by the following reaction.
5W + 6KIO 3 + 3H 2 O → 5WO 3 + 3I 2 + 6KOH
Since the polishing rate of the film is about 100 nm per minute, when the diameter of the substrate W to be polished is 300 mm, the generation of iodine gas corresponds to 2.22 mL per minute. Under this polishing condition, a Teflon (registered trademark) tube having an inner diameter of 4 mm and a length of 1 m is used as the gas suction pipe 52, and the gas suction port 52 a is located at a position 5 mm above the polishing surface 11 a of the polishing table 11. The atmosphere gas G having a flow rate of 0.8 L / min was introduced to the gas detector 53 (see FIGS. 3 and 4), and the generation of iodine gas was monitored. As the gas detector 53, a constant potential electrolytic gas detector (SC-90 manufactured by Riken Keiki Co., Ltd.) was used.
なお、ガス検知器５３は高濃度のヨウ素ガスに長時間暴露されると、ゼロ点への戻りが遅れる傾向にある。例えば、２ｐｐｍのヨウ素ガスに２分間暴露した後、新鮮な空気を供給しても１０秒後に指示値が半減する程度であるが、１０秒間程度の暴露であれば、新鮮空気を供給の後直ちにゼロ点に指示値が戻った。そこで本実施例では、ガス検知器への雰囲気ガスの供給は研磨速度から予測される研磨終点の１０秒前からとした。 When the gas detector 53 is exposed to high-concentration iodine gas for a long time, the return to the zero point tends to be delayed. For example, after exposure to 2 ppm iodine gas for 2 minutes, even if fresh air is supplied, the indicated value is halved after 10 seconds. If exposure is for about 10 seconds, fresh air is supplied immediately after supply. The indicated value has returned to the zero point. Therefore, in this example, the supply of the atmospheric gas to the gas detector was performed 10 seconds before the polishing end point predicted from the polishing rate.
上記のように研磨速度から予測される研磨終点の１０秒前からガス吸引パイプ５２でその吸引口５２ａから雰囲気ガスＧを吸引すると、ガス検知器５３の指示値（ヨウ素ガス検出指示値）は直ちに４．５ｐｐｍに上昇し、研磨速度から予想される研磨終点で急激に低下した。従って、指示値の急激に低下した時点を研磨の終点とすることで、目的を達成することができる。また、本実施例で、適切な検出条件を選択すれば、ガス検知器５３の検出感度が０．１ｐｐｍ程度あれば、毎分０．０５ｍＬのヨウ素ガスの発生を検知できることがわかる。 When the atmospheric gas G is sucked from the suction port 52a by the gas suction pipe 52 from 10 seconds before the polishing end point predicted from the polishing speed as described above, the indicated value (iodine gas detection indicated value) of the gas detector 53 is immediately obtained. It rose to 4.5 ppm and dropped sharply at the polishing end point predicted from the polishing rate. Therefore, the objective can be achieved by setting the point of time when the indicated value sharply decreases as the polishing end point. Further, in this embodiment, it can be seen that if an appropriate detection condition is selected, the generation of 0.05 mL of iodine gas per minute can be detected if the detection sensitivity of the gas detector 53 is about 0.1 ppm.
シリコン窒化膜の停止膜上にシリコン酸化膜の研磨対象膜を積層した基板を、セリアスラリーで研磨すると、シリコン酸化膜の研磨が終了してシリコン窒化膜に接触した途端に、下記の反応によりアンモニアが生成する。
Ｓｉ3Ｎ4＋６Ｈ2Ｏ → ４ＮＨ3＋３ＳｉＯ2
そしてスラリーが強酸性のスラリーであれば、
ＮＨ3＋Ｈ+ → ＮＨ4 +
の反応によりアンモニウムイオンとしてスラリー中に溶存するが、通常の弱酸性スラリーやアルカリ性スラリーではこの反応が働かず、研磨中の温度上昇ともあいまってスラリーからガスとして放出される。従って、このアンモニアガスの発生を検出すれば、シリコン酸化膜の研磨終点を検出できる。
When a substrate in which a silicon oxide film to be polished is laminated on a silicon nitride film stop film is polished with ceria slurry, as soon as polishing of the silicon oxide film is finished and contacted with the silicon nitride film, the following reaction is performed. Ammonia is produced.
Si 3 N 4 + 6H 2 O → 4NH 3 + 3SiO 2
And if the slurry is a strongly acidic slurry,
NH 3 + H + → NH 4 +
This reaction dissolves in the slurry as ammonium ions, but this reaction does not work in ordinary weakly acidic slurries or alkaline slurries, and is released as gas from the slurries together with the temperature rise during polishing. Therefore, if this generation of ammonia gas is detected, the polishing end point of the silicon oxide film can be detected.
セリアスラリーによるシリコン窒化膜の研磨速度は毎分１０ｎｍ前後であり、窒化膜が基板表面に占める面積の割合を２０％とすると、径３００ｍｍの被研磨基板Ｗにおけるアンモニアガスの発生量は毎分０．３ｍＬに相当する。上記実施例１の結果から、この場合にはガス検知器５３の検出感度が０．６ｐｐｍ程度あれば終点検知が可能であることがわかる。定電位電解式などの電気化学式検出器ではこの濃度レベルのアンモニアを検出することが困難であるが、検知テープ式の検知器であれば数秒で検出可能である。 The polishing rate of the silicon nitride film by the ceria slurry is around 10 nm per minute. When the ratio of the area occupied by the nitride film on the substrate surface is 20%, the generation amount of ammonia gas in the substrate W to be polished having a diameter of 300 mm is 0 per minute. Corresponds to 3 mL. From the results of Example 1, it can be seen that in this case, the end point can be detected if the detection sensitivity of the gas detector 53 is about 0.6 ppm. Although it is difficult to detect ammonia at this concentration level with an electrochemical detector such as a constant potential electrolysis type, it can be detected within a few seconds with a detection tape type detector.
上記実施例１と同様の内径４ｍｍ、長さ１ｍのテフロン（登録商標）チューブをガス吸引パイプ５２として用い、そのガス吸引口５２ａを研磨テーブル１１の研磨面上５ｍｍの位置で、被研磨基板Ｗの中心が移動する軌跡Ｄの位置に配置し、ガス検知器２６に検知テープ式アンモニアガス検出器（（株）荏原製作所製ＥＡＭ−１００Ｃ）を用い、毎分０．５Ｌの流量で雰囲気ガスをガス検知器５３に吸引したところ、従来の検知方式である研磨トルクの急変が現れる時点でアンモニアガスの発生を検知した。 A Teflon (registered trademark) tube having an inner diameter of 4 mm and a length of 1 m as in the first embodiment is used as the gas suction pipe 52, and the gas suction port 52 a is positioned 5 mm above the polishing surface of the polishing table 11 to be polished. Is located at the position of the locus D where the center of the gas moves, and the gas detector 26 uses a detection tape type ammonia gas detector (EAM-100C manufactured by Ebara Manufacturing Co., Ltd.), and the atmospheric gas is supplied at a flow rate of 0.5 L / min. When sucked into the gas detector 53, the generation of ammonia gas was detected at the time when a sharp change in the polishing torque, which is a conventional detection method, appears.
図６は上記構成の基板研磨装置において、ガス吸引パイプ５２のガス吸引口５２ａの配置位置、即ち雰囲気ガス吸引位置を変えて雰囲気ガス中の特定成分ガス濃度（ここではＩ2ガス濃度）の検知結果を示す図である。図５において、ＴAはメイン研磨（スラリーによる研磨）開始点、ＴBは水研磨開始点、ＴCは研磨テーブル１１の研磨面のドレッシング開始点、ＴDは研磨テーブル１１の研磨面のドレッシング終了点のそれぞれのタイミング示す。また、ＴEは１枚目の被研磨基板Ｗが研磨面１１ａに当接したタイミング、ＴFは２枚目の被研磨基板Ｗが研磨面１１ａに当接したタイミング、ＴGは３枚目の被研磨基板Ｗが研磨面１１ａに当接したタイミングをそれぞれ示す。また、期間ＴHは１枚目の被研磨基板Ｗが第１洗浄槽３１内にある期間、期間ＴIは２枚目の被研磨基板Ｗが第１洗浄槽３１内にある期間、期間ＴJは３枚目の被研磨基板Ｗが第１洗浄槽３１内にある期間をそれぞれ示す。 FIG. 6 shows detection of a specific component gas concentration (here, I 2 gas concentration) in the atmospheric gas by changing the arrangement position of the gas suction port 52a of the gas suction pipe 52, that is, the atmospheric gas suction position, in the substrate polishing apparatus having the above configuration. It is a figure which shows a result. In FIG. 5, T A is the main polishing (polishing by the slurry) starting point, T B is water polishing start point, T C dressing starting point of the polishing surface of the polishing table 11, the dressing of the polishing surface of T D the polishing table 11 The timing of each end point is shown. T E is the timing when the first substrate W is in contact with the polishing surface 11a, TF is the timing when the second substrate W is in contact with the polishing surface 11a, and TG is the third substrate. The timing at which the substrate to be polished W comes into contact with the polishing surface 11a is shown. The period T H is a period during which the first substrate to be polished W is in the first cleaning tank 31, the period T I is a period during which the second substrate to be polished W is in the first cleaning tank 31, and the period T J indicates a period during which the third substrate to be polished W is in the first cleaning tank 31.
また、図６において、折れ線Ａは右側研磨室１０１の研磨テーブル１１の外周近傍の測定点Ｔ１（図１参照）、折れ線Ｂは右側研磨室１０１の研磨テーブル１１上でトップリング１５の近傍で且つ研磨テーブル１１の回転方向側の測定点Ｔ２（図１参照）、折れ線Ｃは右側研磨室１０１のバフテーブル１６上面の測定点Ｔ３（図１参照）、折れ線Ｄは右側研磨室１０１及び左側研磨室１０２の下方の室１０６の測定点Ｔ４（図２参照）、折れ線Ｅは洗浄室１０３の第１洗浄槽３１内の測定点Ｔ５（図１参照）で、それぞれ検知対象の特定成分ガスを検知した結果を示す。なお、図６の縦軸はＩ２ガス濃度［ｐｐｍ］、横軸は測定時間［ｓｅｃ］を示す。 In FIG. 6, the polygonal line A is a measurement point T1 (see FIG. 1) in the vicinity of the outer periphery of the polishing table 11 in the right polishing chamber 101, and the polygonal line B is in the vicinity of the top ring 15 on the polishing table 11 in the right polishing chamber 101. The measurement point T2 (see FIG. 1) on the rotation direction side of the polishing table 11, the broken line C is the measurement point T3 (see FIG. 1) on the upper surface of the buff table 16 of the right polishing chamber 101, and the broken line D is the right polishing chamber 101 and the left polishing chamber. The measurement point T4 (see FIG. 2) in the chamber 106 below the line 102 and the broken line E are the measurement points T5 (see FIG. 1) in the first cleaning tank 31 of the cleaning chamber 103. Results are shown. In addition, the vertical axis | shaft of FIG. 6 shows I2 gas concentration [ppm], and a horizontal axis shows measurement time [sec].
図６の折れ線Ｂに示すように、右側研磨室１０１の研磨テーブル１１上でトップリング１３の近傍で且つ研磨テーブル１１の回転方向側の測定点Ｔ２での特定成分ガス測定は、メイン研磨開始点ＴA後、５０秒以内に特定成分ガス濃度のピークが検出できる。他の測定点Ｔ１、Ｔ３、Ｔ４、Ｔ５で特定ガス成分を検出するのに比較し、高感度で特定ガス成分を検出することができる。 As shown by the broken line B in FIG. 6, the specific component gas measurement at the measurement point T2 in the vicinity of the top ring 13 on the polishing table 11 of the right polishing chamber 101 and on the rotation direction side of the polishing table 11 is the main polishing start point. after T a, it can be detected peak of the specific component gas concentration within 50 seconds. Compared to detecting the specific gas component at other measurement points T1, T3, T4, and T5, the specific gas component can be detected with high sensitivity.
以上、本発明の実施形態を説明したが、本発明は上記実施形態に限定されるものではなく、特許請求の範囲、及び明細書と図面に記載された技術的思想の範囲内において種々の変形が可能である。なお直接明細書及び図面に記載のない何れの形状・構造・材質であっても、本願発明の作用・効果を奏する以上、本願発明の技術的思想の範囲内である。 Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims and the specification and drawings. Is possible. It should be noted that any shape, structure, and material not directly described in the specification and drawings are within the scope of the technical idea of the present invention as long as the effects and advantages of the present invention are exhibited.
１１ 研磨テーブル
１２ トップリングアーム
１３ トップリング
１４ ドレッサーアーム
１５ ドレッサー
１６ バフテーブル
１７ リニアトランスポータ
１８ プッシャー
１９ リフター
２０ 反転機
２１ ドレッサー待機台
２２ 支持棒
２３ 昇降・旋回機構
２４ テーブル駆動モータ
３１ 第１洗浄槽
３２ 第２洗浄槽
３３ 第１洗浄槽
３４ 第２洗浄槽
３５ 搬送装置
３６ 搬送装置
３７ 基板仮置台
４０ 搬送装置
４１ 基板収納カセット
４２ 基板収納カセット
４３ 基板収納カセット
４４ 基板収納カセット
５０ スラリー供給ノズル
５１ 液供給ノズル
５２ ガス吸引パイプ
５３ ガス検知器
５４ ガス導入部材
１００ 基板研磨装置
１０１ 右側研磨室
１０２ 左側研磨室
１０３ 洗浄室
１０４ 搬送室
１０５ ロード／アンロード室
１０６ 室
DESCRIPTION OF SYMBOLS 11 Polishing table 12 Top ring arm 13 Top ring 14 Dresser arm 15 Dresser 16 Buffing table 17 Linear transporter 18 Pusher 19 Lifter 20 Reversing machine 21 Dresser stand 22 Support rod 23 Lifting / turning mechanism 24 Table drive motor 31 1st washing tank 32 Second cleaning tank 33 First cleaning tank 34 Second cleaning tank 35 Transfer device 36 Transfer device 37 Substrate temporary table 40 Transfer device 41 Substrate storage cassette 42 Substrate storage cassette 43 Substrate storage cassette 44 Substrate storage cassette 50 Slurry supply nozzle 51 Liquid Supply nozzle 52 Gas suction pipe 53 Gas detector 54 Gas introduction member 100 Substrate polishing apparatus 101 Right polishing chamber 102 Left polishing chamber 103 Cleaning chamber 104 Transfer chamber 105 Load / unload chamber 106 chamber
Claims (9)
前記研磨テーブルの研磨面直上にガスを吸引するガス吸引口を有するガス吸引管を設け、該ガス吸引口より該研磨面上の雰囲気ガスをガス検知器に吸引し、該雰囲気ガス中の特定成分ガスを監視しながら前記被研磨物を研磨することを特徴とする研磨方法。 In a polishing method of pressing an object to be polished against the polishing surface of a polishing table and polishing the object by relative movement of the object to be polished and the polishing surface,
A gas suction pipe having a gas suction port for sucking gas is provided immediately above the polishing surface of the polishing table, and the atmospheric gas on the polishing surface is sucked into the gas detector from the gas suction port, and a specific component in the atmospheric gas A polishing method comprising polishing the object to be polished while monitoring gas.
前記特定ガスの生成又は消失を持って研磨の終点とすることを特徴とする研磨方法。 The polishing method according to claim 1,
A polishing method characterized in that the generation or disappearance of the specific gas is used as an end point of polishing.
前記ガス吸引管のガス吸引口の開口部を前記研磨テーブルの研磨面から１００ｍｍ未満の高さ位置に設置したことを特徴とする研磨方法。 In the polishing method according to claim 1 or 2,
A polishing method, wherein an opening of a gas suction port of the gas suction tube is installed at a height position less than 100 mm from a polishing surface of the polishing table.
前記ガス検知器の検知部に対して、非検知中に新鮮な空気を供給することを特徴とする研磨方法。 In the polishing method according to any one of claims 1 to 3,
A polishing method, wherein fresh air is supplied to the detection part of the gas detector during non-detection.
前記研磨テーブルの研磨面直上にガスを吸引するガス吸引口を有するガス吸引管を設ける共に、特定成分ガスを検知するガス検知器を設け、
前記ガス吸引管で雰囲気ガスを前記ガス検知器に吸引し、該雰囲気ガス中の特定成分ガスを検知できるようにしたことを特徴とする研磨装置。 In a polishing apparatus that presses an object to be polished against a polishing surface of a polishing table by instruction control of a control unit, and polishes the object to be polished by relative movement of the object to be polished and the polishing surface,
While providing a gas suction pipe having a gas suction port for sucking gas directly above the polishing surface of the polishing table, a gas detector for detecting a specific component gas is provided,
A polishing apparatus, wherein an atmospheric gas is sucked into the gas detector by the gas suction pipe so that a specific component gas in the atmospheric gas can be detected.
前記制御部は、前記ガス検知器が前記特定ガスの検知又は非検知をもって研磨の終点とする機能を備えたことを特徴とする研磨装置。 The polishing apparatus according to claim 5, wherein
The polishing apparatus, wherein the control unit has a function of setting the end point of polishing by detecting or not detecting the specific gas.
前記ガス吸引口の開口部を前記研磨テーブルの研磨面から１００ｍｍ未満の高さ位置に設置したことを特徴とする研磨装置。 The polishing apparatus according to claim 5 or 6,
A polishing apparatus, wherein the opening of the gas suction port is installed at a height position less than 100 mm from the polishing surface of the polishing table.
前記ガス検知器の検知部に対して、非検知中に新鮮な空気を供給する空気供給手段を備えたことを特徴とする研磨装置。 The polishing apparatus according to any one of claims 4 to 7,
A polishing apparatus comprising air supply means for supplying fresh air to the detector of the gas detector during non-detection.
前記被研磨物を保持するトップリングと、 A top ring for holding the workpiece;
前記研磨テーブルの研磨面直上で且つ前記トップリング近傍にガスを吸引するガス吸引口を有するガス吸引管と、 A gas suction pipe having a gas suction port for sucking gas immediately above the polishing surface of the polishing table and in the vicinity of the top ring;
前記ガス吸引管に連通し、前記被研磨物の面に形成された膜とスラリーとの反応により発生し、該吸引されたガス中に含まれる特定成分を検知するガス検知器とを設けたことを特徴とする研磨装置。 Provided with a gas detector that communicates with the gas suction pipe and detects a specific component contained in the sucked gas generated by the reaction between the film formed on the surface of the object to be polished and the slurry. A polishing apparatus characterized by the above.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006113813A JP2007287939A (en) | 2006-04-17 | 2006-04-17 | Method and device for polishing |
| US11/785,190 US20070243797A1 (en) | 2006-04-17 | 2007-04-16 | Polishing method and polishing apparatus |
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| JP2006113813A JP2007287939A (en) | 2006-04-17 | 2006-04-17 | Method and device for polishing |
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| JP2007287939A5 true JP2007287939A5 (en) | 2009-03-19 |
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| CN102490112B (en) * | 2006-10-06 | 2015-03-25 | 株式会社荏原制作所 | Processing end point detecting method, polishing method and polishing apparatus |
| CN105643464B (en) * | 2015-12-25 | 2019-06-07 | 深圳市沃特沃德股份有限公司 | A kind of processing method and housing mould of mobile terminal shell |
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| US6180422B1 (en) * | 1998-05-06 | 2001-01-30 | International Business Machines Corporation | Endpoint detection by chemical reaction |
| US6066564A (en) * | 1998-05-06 | 2000-05-23 | International Business Machines Corporation | Indirect endpoint detection by chemical reaction |
| US6021679A (en) * | 1998-08-04 | 2000-02-08 | International Business Machines Corporation | Probe for slurry gas sampling |
| US6254453B1 (en) * | 1999-09-30 | 2001-07-03 | International Business Machines Corporation | Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system |
| US6291351B1 (en) * | 2000-06-28 | 2001-09-18 | International Business Machines Corporation | Endpoint detection in chemical-mechanical polishing of cloisonne structures |
| JP2003338499A (en) * | 2002-05-20 | 2003-11-28 | Tokyo Electron Ltd | Method and system for forming film |
| US6899784B1 (en) * | 2002-06-27 | 2005-05-31 | International Business Machines Corporation | Apparatus for detecting CMP endpoint in acidic slurries |
| US6878629B1 (en) * | 2002-06-27 | 2005-04-12 | International Business Machines Corporation | Method for detecting CMP endpoint in acidic slurries |
| US7189146B2 (en) * | 2003-03-27 | 2007-03-13 | Asm Nutool, Inc. | Method for reduction of defects in wet processed layers |
| KR100583105B1 (en) * | 2003-12-24 | 2006-05-23 | 주식회사 하이닉스반도체 | Method for Detecting End-Point of Chemical Mechanical Polishing |
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