JP2007243378A5 - - Google Patents
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- JP2007243378A5 JP2007243378A5 JP2006060561A JP2006060561A JP2007243378A5 JP 2007243378 A5 JP2007243378 A5 JP 2007243378A5 JP 2006060561 A JP2006060561 A JP 2006060561A JP 2006060561 A JP2006060561 A JP 2006060561A JP 2007243378 A5 JP2007243378 A5 JP 2007243378A5
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- Prior art keywords
- piezoelectric
- piezoelectric vibrator
- lower substrates
- manufacturing
- frame
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- 239000000758 substrate Substances 0.000 claims 34
- 238000004519 manufacturing process Methods 0.000 claims 17
- 230000005284 excitation Effects 0.000 claims 11
- 235000012431 wafers Nutrition 0.000 claims 10
- 230000000875 corresponding Effects 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 238000000605 extraction Methods 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- 239000012298 atmosphere Substances 0.000 claims 3
- 238000009832 plasma treatment Methods 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 1
- 230000001404 mediated Effects 0.000 claims 1
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052904 quartz Inorganic materials 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Claims (14)
前記中間圧電板と前記上側及び下側基板とにより画定されるキャビティ内に前記圧電振動片が保持され、
前記上側及び下側基板と前記中間圧電板とが互いに気密に接合され、
前記各励振電極は、前記枠体に設けられる前記上側及び下側基板との接続部に引き出し電極を介してそれぞれ接続され、
前記上側及び下側基板それぞれの前記接続部と対応する位置に、前記上側及び下側基板の少なくともいずれか一方に設けられた外部接続端子と電気的に接続された基板スルーホールが設けられ、各基板スルーホールのそれぞれに導電接合材を埋設することにより前記各励振電極と前記外部接続端子とが導通される構造の圧電振動子であって、
前記枠体の各接続部が、前記枠体を貫通して形成された枠体スルーホールによって反対側に形成された前記励振電極と導通することを特徴とする圧電振動子。 A piezoelectric vibrating piece provided with excitation electrodes on both main surfaces, an intermediate piezoelectric plate integrally formed with a frame, and upper and lower substrates respectively joined to the upper surface and the lower surface of the intermediate piezoelectric plate;
The piezoelectric vibrating piece is held in a cavity defined by the intermediate piezoelectric plate and the upper and lower substrates,
Wherein said upper and lower substrates and the intermediate piezoelectric plate is bonded to the gas-tight manner to each other,
Each of the excitation electrodes is connected to a connection portion with the upper and lower substrates provided in the frame body via an extraction electrode, respectively.
Substrate through holes electrically connected to external connection terminals provided on at least one of the upper and lower substrates are provided at positions corresponding to the connection portions of the upper and lower substrates, respectively. A piezoelectric vibrator having a structure in which each excitation electrode and the external connection terminal are electrically connected by embedding a conductive bonding material in each of the substrate through holes,
Each connection part of the said frame is connected with the said excitation electrode formed in the other side by the frame through-hole formed through the said frame, The piezoelectric vibrator characterized by the above-mentioned.
前記中間圧電板の上面及び下面にそれぞれ接合される上側及び下側基板とを有し、
前記中間圧電板と前記上側及び下側基板とにより画定されるキャビティ内に前記圧電振動片が保持され、
前記上側及び下側基板と前記中間圧電板とが互いに気密に接合され、
前記各励振電極は、前記枠体に設けられる前記上側及び下側基板のいずれかとの接続部に引き出し電極を介してそれぞれ接続され、
前記上側及び下側基板の少なくとも一方の前記接続部と対応する位置に、前記上側及び下側基板の少なくとも一方に設けられた外部接続端子と電気的に接続された基板スルーホールが設けられ、
前記基板スルーホールに導電接合材を埋設することにより前記各励振電極と前記外部接続端子とが導通される構造の圧電振動子であって、
前記枠体の一方の前記接続部が、前記枠体を貫通して形成された枠体スルーホールによって反対側に形成された一方の前記励振電極と導通し、他方の前記接続部は、前記枠体を貫通して形成された偶数個の枠体スルーホールを往復することにより他方の前記励振電極側と導通することを特徴とする圧電振動子。 An intermediate piezoelectric plate in which a piezoelectric vibrating piece provided with excitation electrodes on both main surfaces and a frame are integrally formed;
An upper and lower substrate respectively bonded to the upper and lower surfaces of the intermediate piezoelectric plate;
The piezoelectric vibrating piece is held in a cavity defined by the intermediate piezoelectric plate and the upper and lower substrates,
Wherein the upper and lower substrates and the intermediate piezoelectric plate is joined hermetically to each other,
Each of the excitation electrodes is connected to a connection portion with any one of the upper and lower substrates provided on the frame via an extraction electrode,
A substrate through hole electrically connected to an external connection terminal provided in at least one of the upper and lower substrates is provided at a position corresponding to the connection portion of at least one of the upper and lower substrates,
A piezoelectric vibrator having a structure in which each excitation electrode and the external connection terminal are electrically connected by embedding a conductive bonding material in the substrate through-hole,
One of the connection portions of the frame body is electrically connected to one of the excitation electrodes formed on the opposite side by a frame body through-hole formed through the frame body, and the other connection portion is connected to the frame A piezoelectric vibrator characterized in that it is electrically connected to the other excitation electrode side by reciprocating through an even number of through holes formed through the body.
前記中間圧電板と、上側及び下側基板が水晶からなることを特徴とする圧電振動子。 The piezoelectric vibrator according to claim 1 or 2,
The piezoelectric vibrator, wherein the intermediate piezoelectric plate and the upper and lower substrates are made of quartz.
前記上側及び下側基板がガラス材料またはシリコンからなることを特徴とする圧電振動子。 The piezoelectric vibrator according to claim 1 or 2,
The piezoelectric vibrator characterized in that the upper and lower substrates are made of glass material or silicon.
前記中間圧電板の上面側に設けられた前記接合部と対応する基板スルーホールを形成して、前記中間圧電板の上面に接合される上側基板を形成する工程と、
前記中間圧電板の下面側に設けられた前記接合部と対応する基板スルーホールを形成して、前記中間圧電板の下面側に接合する下側基板を形成する工程と、
前記中間圧電板と前記上側及び下側基板とを、それらにより画定されるキャビティ内に前記圧電振動片が保持されるように重ね合わせ、それらを加圧して気密に接合する工程と、
前記上側及び下側基板の各基板スルーホールに導電接合材を埋設する工程と、を有することを特徴とする圧電振動子の製造方法。 Excitation electrodes are formed on each of the upper and lower surfaces of the piezoelectric vibrating piece formed integrally with the frame, and extraction electrodes connected to the respective excitation electrodes are formed on the frame, and the frame is penetrated from each extraction electrode. Forming each frame through-hole, and forming an intermediate piezoelectric plate by forming each connection portion connected to the extraction electrode through the frame through-hole;
Forming a substrate through hole corresponding to the bonding portion provided on the upper surface side of the intermediate piezoelectric plate, and forming an upper substrate bonded to the upper surface of the intermediate piezoelectric plate;
Forming a substrate through hole corresponding to the bonding portion provided on the lower surface side of the intermediate piezoelectric plate, and forming a lower substrate bonded to the lower surface side of the intermediate piezoelectric plate ;
And said upper and lower substrates before and Symbol intermediate piezoelectric plate, wherein the cavity defined by their superposition to the piezoelectric vibrating piece is held, and bonding the airtight pressurized them,
And a step of embedding a conductive bonding material in each substrate through hole of the upper and lower substrates.
複数の前記中間圧電板を有する中間圧電ウェハを形成する工程と、
複数の前記上側基板を前記中間圧電ウェハの中間圧電板に対応させて配設した上側ウェハを形成する工程と、
複数の前記下側基板を前記中間圧電ウェハの中間圧電板に対応させて配設した下側ウェハを形成する工程と、
前記中間圧電ウェハの上下面に前記上側及び下側ウェハを重ね合わせ、それらを加圧して一体に接合してウェハ積層体とする工程と、
前記上側及び下側ウェハの各スルーホールに導電接合材を埋設する工程と、
前記ウェハ積層体を切断して圧電振動子を個片化する工程と、を有することを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to claim 5,
Forming an intermediate piezoelectric wafer having a plurality of said intermediate piezoelectric plates;
Forming an upper wafer in which a plurality of the upper substrates are arranged corresponding to the intermediate piezoelectric plates of the intermediate piezoelectric wafer;
Forming a lower wafer in which a plurality of the lower substrates are arranged corresponding to the intermediate piezoelectric plate of the intermediate piezoelectric wafer ;
Before SL superposing the upper and lower web wafer on the upper and lower surfaces of the intermediate piezoelectric wafer, a step of a wafer laminated body are bonded to one body by pressurizing them,
Burying a conductive bonding material in each through hole of the upper and lower wafers;
And a step of cutting the wafer laminate to divide the piezoelectric vibrator into individual pieces.
前記上側及び下側基板を形成するそれぞれの工程に、前記上側及び下側基板のそれぞれに設けたスルーホールに前記導電接合材を埋設する工程を含むことを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to claim 5 or 6,
A method of manufacturing a piezoelectric vibrator, wherein each step of forming the upper and lower substrates includes a step of burying the conductive bonding material in a through hole provided in each of the upper and lower substrates.
前記プラズマ処理が、CF4、Ar、またはN2ガスを用いて、酸素不介在の雰囲気内で行われることを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 7,
A method for manufacturing a piezoelectric vibrator, wherein the plasma treatment is performed in an oxygen-free atmosphere using CF 4, Ar, or N 2 gas.
前記プラズマ処理が、O2ガス、CF4とO2との混合ガス、またはN2とO2との混合ガスを用いて、酸素介在の雰囲気内で行われることを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 7,
A method of manufacturing a piezoelectric vibrator, wherein the plasma treatment is performed in an oxygen-mediated atmosphere using an O2 gas, a mixed gas of CF4 and O2, or a mixed gas of N2 and O2.
前記中間圧電板の上下面に上側及び下側基板を重ね合わせ、常温で加圧して気密に接合することを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 9,
A method of manufacturing a piezoelectric vibrator, comprising: superposing upper and lower substrates on the upper and lower surfaces of the intermediate piezoelectric plate and pressurizing at an ordinary temperature for airtight bonding.
前記中間圧電板の上下面に上側及び下側基板を重ね合わせ、加熱した状態で加圧して気密に接合することを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 9,
A method of manufacturing a piezoelectric vibrator, wherein upper and lower substrates are superposed on the upper and lower surfaces of the intermediate piezoelectric plate, and are heated and pressed in an airtight manner.
前記中間圧電板の上下面に上側及び下側基板を重ね合わせ、N2雰囲気で加圧して気密に接合することを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 11,
A method of manufacturing a piezoelectric vibrator, comprising: superposing upper and lower substrates on the upper and lower surfaces of the intermediate piezoelectric plate, and pressurizing in an N2 atmosphere for airtight bonding.
前記中間圧電板の上下面に上側及び下側基板を重ね合わせ、減圧雰囲気で加圧して気密に接合することを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 11,
A method of manufacturing a piezoelectric vibrator, comprising: superposing upper and lower substrates on the upper and lower surfaces of the intermediate piezoelectric plate, and pressurizing in a reduced pressure atmosphere to airtightly bond.
前記中間圧電板の上下面に上側及び下側基板を重ね合わせて仮接合した後、それにより一体化された積層体の上下面を加圧して気密に接合することを特徴とする圧電振動子の製造方法。 In the manufacturing method of the piezoelectric vibrator according to any one of claims 5 to 13,
The upper and lower substrates are superposed on the upper and lower surfaces of the intermediate piezoelectric plate and temporarily bonded, and then the upper and lower surfaces of the integrated laminate are pressed and airtightly bonded. Production method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006060561A JP4978030B2 (en) | 2006-03-07 | 2006-03-07 | Piezoelectric device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006060561A JP4978030B2 (en) | 2006-03-07 | 2006-03-07 | Piezoelectric device |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2011095918A Division JP2011151857A (en) | 2011-04-22 | 2011-04-22 | Piezoelectric vibrator, electronic device, and electronic equipment |
JP2011196493A Division JP5408213B2 (en) | 2011-09-08 | 2011-09-08 | Vibrator |
Publications (3)
Publication Number | Publication Date |
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JP2007243378A JP2007243378A (en) | 2007-09-20 |
JP2007243378A5 true JP2007243378A5 (en) | 2008-12-18 |
JP4978030B2 JP4978030B2 (en) | 2012-07-18 |
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JP2006060561A Expired - Fee Related JP4978030B2 (en) | 2006-03-07 | 2006-03-07 | Piezoelectric device |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5263475B2 (en) * | 2007-10-09 | 2013-08-14 | セイコーエプソン株式会社 | Piezoelectric device and manufacturing method thereof |
JP5282392B2 (en) * | 2007-11-05 | 2013-09-04 | セイコーエプソン株式会社 | Direct bonding wafer |
JP4647671B2 (en) | 2008-01-15 | 2011-03-09 | 日本電波工業株式会社 | Quartz device and method of manufacturing quartz device |
JP5188834B2 (en) * | 2008-02-25 | 2013-04-24 | 京セラクリスタルデバイス株式会社 | Manufacturing method of crystal unit |
JP5251224B2 (en) * | 2008-04-18 | 2013-07-31 | 株式会社大真空 | Method for manufacturing piezoelectric vibration device and piezoelectric vibration device |
JP2010251943A (en) * | 2009-04-14 | 2010-11-04 | Daishinku Corp | Piezoelectric vibration device |
JP5262946B2 (en) * | 2009-04-15 | 2013-08-14 | セイコーエプソン株式会社 | Electronic devices |
JP5465462B2 (en) * | 2009-04-28 | 2014-04-09 | 京セラクリスタルデバイス株式会社 | Manufacturing method of crystal unit |
JP5527564B2 (en) * | 2013-01-21 | 2014-06-18 | セイコーエプソン株式会社 | Vibration device |
JP5573991B2 (en) * | 2013-02-20 | 2014-08-20 | セイコーエプソン株式会社 | Bonding wafer |
WO2017208866A1 (en) * | 2016-05-31 | 2017-12-07 | 株式会社村田製作所 | Crystal oscillator and method for manufacturing same |
CN111313855B (en) * | 2020-03-16 | 2023-06-13 | 研创科技(惠州)有限公司 | Novel resonator assembling method |
Family Cites Families (12)
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JPH07112142B2 (en) * | 1986-10-21 | 1995-11-29 | 東洋通信機株式会社 | Piezoelectric resonator sealing structure |
JPH07154177A (en) * | 1993-12-01 | 1995-06-16 | Matsushita Electric Ind Co Ltd | Manufacture of piezoelectric device |
JP2542493B2 (en) * | 1995-04-28 | 1996-10-09 | 古河電気工業株式会社 | Composite circuit board |
JPH09107257A (en) * | 1995-10-12 | 1997-04-22 | Matsushita Electric Ind Co Ltd | Production of quartz oscillator |
JPH10209799A (en) * | 1997-01-24 | 1998-08-07 | Matsushita Electric Ind Co Ltd | Vibrator |
JPH10297931A (en) * | 1997-04-24 | 1998-11-10 | Matsushita Electric Ind Co Ltd | Production of composite piezoelectric substrate |
JP2000269775A (en) * | 1999-03-16 | 2000-09-29 | Nippon Dempa Kogyo Co Ltd | Thin crystal vibrator |
JP2001119264A (en) * | 1999-10-15 | 2001-04-27 | Nippon Dempa Kogyo Co Ltd | Crystal oscillator |
JP3881193B2 (en) * | 2001-06-13 | 2007-02-14 | 松下電器産業株式会社 | Electronic component mounted component manufacturing method, electronic component mounted component, electronic component mounted finished product manufacturing method, and electronic component mounted finished product |
JP2003017965A (en) * | 2001-07-04 | 2003-01-17 | Nippon Dempa Kogyo Co Ltd | Manufacturing method for quartz vibrator |
JP2004304622A (en) * | 2003-03-31 | 2004-10-28 | Fujitsu Media Device Kk | Surface acoustic wave device and its manufacturing method |
JP4321104B2 (en) * | 2003-04-25 | 2009-08-26 | エプソントヨコム株式会社 | Piezoelectric oscillator and method for manufacturing the same |
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2006
- 2006-03-07 JP JP2006060561A patent/JP4978030B2/en not_active Expired - Fee Related
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