JP2007214340A - Metallic ultra-fine particle using bonding material and semiconductor device using the same - Google Patents

Metallic ultra-fine particle using bonding material and semiconductor device using the same Download PDF

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Publication number
JP2007214340A
JP2007214340A JP2006032295A JP2006032295A JP2007214340A JP 2007214340 A JP2007214340 A JP 2007214340A JP 2006032295 A JP2006032295 A JP 2006032295A JP 2006032295 A JP2006032295 A JP 2006032295A JP 2007214340 A JP2007214340 A JP 2007214340A
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metal
ultrafine
particles
bonding material
bonding
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JP2006032295A
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JP4598687B2 (en
Inventor
Toshiaki Morita
俊章 守田
Toshiaki Ishii
利昭 石井
Kojiro Kobayashi
紘二郎 小林
Akio Hirose
明夫 廣瀬
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Hitachi Ltd
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Hitachi Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a bonding material structure suitable for securing metal bonds, when a substrate is constituted of a metal, and the structure of a semiconductor device employing an ultra fine metal particle bonding material, in the bonding material, provided with a particle layer consisting of ultra-fine metal particles on the surface of the substrate. <P>SOLUTION: The bonding material is provided with a grain layer 302, including the ultra-fine metal particles of grain size of 1-100 nm on the surface of the metal substrate 301. At least the surface of the substrate is constituted of a material, in which the ultra-fine metal particles are connected to a metal. Further, in the semiconductor device in which the electrode 106 of semiconductor element 101 and a wiring 201 for extracting the electrical signal of the semiconductor element to outside are connected by a connecting material employing the ultra fine metal particles, a metallization layer of a material connected to the ultra-fine particles of metal through metallic connection is applied on the surface of electronic components, opposite to the connecting material employing the ultra-fine particles of metal, in the semiconductor device connected by the connecting material that employs the ultra-fine particles of metal. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、金属超微粒子を接合の主剤として含む接合材に係り、また、その接合材を使用して接合が行われた半導体装置に関する。   The present invention relates to a bonding material containing metal ultrafine particles as a main agent for bonding, and also relates to a semiconductor device bonded using the bonding material.

粒径が１〜１００ｎｍの超微粒の金属粒子は、バルクの状態にくらべて融点が著しく低いことが知られている。この性質を利用して、金属超微粒子を接合材として用いることが検討されている（例えば、特許文献１及び２参照）。   It is known that ultrafine metal particles having a particle diameter of 1 to 100 nm have a remarkably low melting point compared to the bulk state. Utilizing this property, it has been studied to use metal ultrafine particles as a bonding material (see, for example, Patent Documents 1 and 2).

特許文献１には、金属粒子からなる核の周囲に有機物よりなる皮膜を施した接合材料が記載されている。特許文献２には、テープ状、シート状又はフィルム状の基材の表面に、特許文献１に記載の接合材料を被覆した複合形接合材料が記載されている。   Patent Document 1 describes a bonding material in which a coating made of an organic substance is provided around a core made of metal particles. Patent Document 2 describes a composite bonding material in which a bonding material described in Patent Document 1 is coated on the surface of a tape-shaped, sheet-shaped or film-shaped substrate.

特開２００４−１０７７２８号公報（要約）JP 2004-107728 A (summary) 特開２００５−２０５６９６号公報（要約）JP 2005-205696 A (summary)

特許文献１及び特許文献２には、半導体素子等の電子部品を接合するのに使用できることが記載されている。   Patent Document 1 and Patent Document 2 describe that it can be used to join electronic components such as semiconductor elements.

半導体装置を構成する電子部品を、金属超微粒子を接合の主剤とした接合材を用いて接合する場合には、電気的導通を確保することが必要になる。また、接合材には熱歪の緩和、熱伝導性も要求される。   In the case where electronic components constituting a semiconductor device are bonded using a bonding material containing metal ultrafine particles as a main agent for bonding, it is necessary to ensure electrical continuity. Further, the bonding material is required to relax thermal strain and to have thermal conductivity.

このようなことから、接合材は、電気伝導性を有する金属基材の表面に金属超微粒子層を設けたものとすることが望ましいが、特許文献２には基材に金属材料を用いた場合についての具体的な記載がない。   For this reason, it is desirable that the bonding material is provided with a metal ultrafine particle layer on the surface of a metal base material having electrical conductivity. However, in Patent Document 2, a metal material is used for the base material. There is no specific description about.

本発明の目的は、金属基材の表面に金属超微粒子を含む粒子層を有し、接合後に基材と粒子層とが金属的に結合されるようにした接合材と、それを使用して電気的導通が確保されるようにした半導体装置を提供することにある。   An object of the present invention is to provide a bonding material having a particle layer containing metal ultrafine particles on the surface of a metal substrate, and the substrate and the particle layer are metallicly bonded after bonding, and using the bonding material. An object of the present invention is to provide a semiconductor device in which electrical conduction is ensured.

本発明は、基材の表面に、粒径が１〜１００ｎｍの金属超微粒子を含む粒子層を有する接合材において、前記基材が金属で構成され、前記基材の少なくとも表面が前記金属超微粒子と金属結合する材料で構成されていることを特徴とする金属超微粒子使用接合材にある。   The present invention provides a bonding material having a particle layer containing metal ultrafine particles having a particle diameter of 1 to 100 nm on the surface of the substrate, wherein the substrate is made of metal, and at least the surface of the substrate has the metal ultrafine particles. It is in the joining material using a metal ultrafine particle characterized by being comprised with the material which carries out a metal bond.

また、金属超微粒子よりなる粒子層の表面がさらに有機物で被覆されている金属超微粒子使用接合材にある。   Further, the present invention is a bonding material using ultrafine metal particles in which the surface of a particle layer made of ultrafine metal particles is further coated with an organic substance.

また、半導体素子の電極と前記半導体素子の電気信号を外部に取り出す配線とが接合材によって接合されている半導体装置において、前記接合材が金属基材の表面に粒径１〜１００ｎｍの金属超微粒子を含む粒子層を有し、前記基材の少なくとも表面が前記金属超微粒子と金属結合する材料で構成されている金属超微粒子使用接合材によって構成されており、前記金属超微粒子使用接合材と相対する側の表面に前記金属超微粒子と金属結合する材料のメタライズ層が施されていることを特徴とする半導体装置にある。   Further, in the semiconductor device in which the electrode of the semiconductor element and the wiring for taking out the electric signal of the semiconductor element are joined by a joining material, the joining material is a metal ultrafine particle having a particle diameter of 1 to 100 nm on the surface of the metal base material And at least the surface of the base material is composed of a bonding material using ultrafine metal particles that is composed of a material that is metal-bonded to the ultrafine metal particles, and is relatively to the bonding material using ultrafine metal particles. The semiconductor device is characterized in that a metallized layer of a material that is metal-bonded to the ultrafine metal particles is applied to the surface on the side to be processed.

本発明により、金属超微粒子を接合の主剤とし、電気的導通が要求される電子部品の接合に好適な接合材を提供することができた。また、金属超微粒子使用接合材を用いた場合に、電気的導通が確保し得る半導体装置の構造を提供することができた。   According to the present invention, it has been possible to provide a bonding material suitable for bonding electronic components that require electrical continuity, using metal ultrafine particles as a main agent for bonding. In addition, when a bonding material using ultrafine metal particles is used, a structure of a semiconductor device that can ensure electrical continuity can be provided.

本発明の金属超微粒子使用接合材において、金属超微粒子は、Ａｕ、Ａｇ、Ｎｉ、Ｃｕ、Ａｌ、Ｚｎ、Ｓｎ、Ｉｎ、Ｂｉ及びＳｂから選ばれた少なくとも１種よりなるものが好ましい。これらの金属は電気伝導性を有しており、電子部品の接合における接合の主剤として好適である。また、これらの金属よりなる超微粒子の融点は、バルクの状態での融点に比べて著しく小さいことが確認されている。   In the bonding material using ultrafine metal particles of the present invention, the ultrafine metal particles are preferably composed of at least one selected from Au, Ag, Ni, Cu, Al, Zn, Sn, In, Bi, and Sb. These metals have electrical conductivity and are suitable as a main agent for joining electronic parts. Further, it has been confirmed that the melting point of the ultrafine particles made of these metals is significantly smaller than the melting point in the bulk state.

金属超微粒子の粒径は１〜１００ｎｍ、特に１〜５０ｎｍであることが好ましい。１〜５０ｎｍの粒径の粒子は、一般にナノ粒子と言われている粒子である。これらの粒子径であれば、バルクの状態のときに比べて著しく低い溶融温度が得られる。金属超微粒子は接合時の加熱によって溶融し、粒子同士が相互に融合してバルクになる。バルクになった後の溶融温度は通常のバルクの状態での金属の溶融温度と同じであり、金属超微粒子は低温の加熱で溶融し、溶融後はバルクの状態での溶融温度に加熱されるまで再溶融しないという特徴を有する。これは、金属超微粒子を用いた場合に低い温度で接合を行うことができ、接合後は溶融温度が向上することから、その後、他の電子部品を接合している際に接合部が再溶融しないというメリットをもたらす。   The particle diameter of the ultrafine metal particles is preferably 1 to 100 nm, particularly preferably 1 to 50 nm. Particles having a particle size of 1 to 50 nm are particles generally referred to as nanoparticles. With these particle sizes, a remarkably low melting temperature can be obtained as compared with the bulk state. The ultrafine metal particles are melted by heating at the time of joining, and the particles are fused together to become a bulk. The melting temperature after becoming bulk is the same as the melting temperature of the metal in the normal bulk state, and the ultrafine metal particles are melted by heating at a low temperature, and then heated to the melting temperature in the bulk state after melting. It has the feature of not remelting until. This is because when ultra-fine metal particles are used, bonding can be performed at a low temperature, and the melting temperature is improved after bonding. After that, when other electronic components are bonded, the bonded portion is remelted. The advantage of not.

金属超微粒子は、接合によって相手部材と金属的に結合されることが接合強度を高めるため、及び、電気的導通を確保するために要求される。もちろん、基材も超微粒子を形成する金属と金属的に結合されることが要求される。このために、基材の表面は、金属超微粒子と金属結合する材料によって形成されていることが望ましい。金属超微粒子がＡｕ、Ａｇ、Ｎｉ、Ｃｕ、Ａｌ、Ｚｎ、Ｓｎ、Ｉｎ、Ｂｉ及びＳｂから選ばれた少なくとも１種よりなり、基材がＡｇ、Ｃｕ又はそれらを主成分とする合金よりなる接合材は、金属超微粒子と基材とが接合時に金属的に結合する。   The metal ultrafine particles are required to be metallicly bonded to the counterpart member by bonding in order to increase the bonding strength and to ensure electrical conduction. Of course, the substrate is also required to be metallically bonded to the metal forming the ultrafine particles. For this reason, it is desirable that the surface of the base material be formed of a material that is metal-bonded to the ultrafine metal particles. The metal ultrafine particles are made of at least one selected from Au, Ag, Ni, Cu, Al, Zn, Sn, In, Bi and Sb, and the base material is made of Ag, Cu or an alloy containing them as a main component. In the material, metallic ultrafine particles and the base material are metallicly bonded at the time of bonding.

金属基材の表面にメタライズ層を施して、金属超微粒子が溶融した際に金属結合が行われるようにすることは極めて好ましく、これは金属基材を広範囲の材料から選べるという効果をもたらす。金属超微粒子がＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなり、金属基材の表面にＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなるメタライズ層を有する接合材は、半導体装置に適用するのに好適である。   It is extremely preferable to apply a metallized layer to the surface of the metal substrate so that metal bonding is performed when the metal ultrafine particles are melted, which brings about the effect that the metal substrate can be selected from a wide range of materials. A bonding material in which the ultrafine metal particles are made of at least one selected from Au, Ag, Ni and Cu, and has a metallized layer made of at least one selected from Au, Ag, Ni and Cu on the surface of the metal substrate. It is suitable for application to a semiconductor device.

金属超微粒子同士が接合前に凝集して粗大化してしまうのを阻止するために、粒子層の表面を有機物で被覆することは好ましい。また、有機物に粘着性のあるものを使用した場合には、接合される部品と接合材との位置合わせが容易になるという効果がある。粘着性のある有機物としては、例えば濃度０．５％程度のポリアクリル酸がある。有機物は塗布等によって容易に粒子層に被覆することができる。また、有機物は接合時の加熱によって消失するので、金属超微粒子と被接合材との金属結合を損なうことはない。   In order to prevent the ultrafine metal particles from being aggregated and coarsened before bonding, it is preferable to coat the surface of the particle layer with an organic substance. In addition, when an organic material having an adhesive property is used, there is an effect that it becomes easy to align the parts to be joined and the joining material. An example of the sticky organic material is polyacrylic acid having a concentration of about 0.5%. The organic substance can be easily coated on the particle layer by coating or the like. In addition, since the organic substance disappears by heating at the time of bonding, the metal bond between the metal ultrafine particles and the material to be bonded is not impaired.

金属超微粒子あるいは金属超微粒子と有機物被覆よりなり、基材を含まない接合材は、その形を維持することが難しく、接合作業上を行う上での取り扱いが難しい。基材を用いることにより、接合材の形状の確保あるいは厚さの確保が容易に行えるようになるので、前記したような問題を回避できる。   A bonding material made of ultrafine metal particles or ultrafine metal particles and an organic coating and not including a base material is difficult to maintain its shape, and is difficult to handle when performing bonding work. By using the base material, it becomes possible to easily secure the shape or thickness of the bonding material, so that the above-described problems can be avoided.

本発明の接合材において、粒子層は粒径が１〜１００ｎｍの金属超微粒子とともに、粒径が１〜１００μｍのミクロンサイズの金属粒子を含んでいてもよい。ミクロンサイズの金属粒子に高電気伝導材料を用いるようにすれば、電気的伝導性をより一層高めることができる。   In the bonding material of the present invention, the particle layer may contain micron-sized metal particles having a particle size of 1 to 100 μm, together with metal ultrafine particles having a particle size of 1 to 100 nm. If a highly electrically conductive material is used for micron-sized metal particles, the electrical conductivity can be further enhanced.

本発明の接合材によって接合される半導体装置では、半導体装置の部品側にも金属超微粒子と金属的に結合可能なメタライズ層を施しておくことが要求される。これにより、接合材を介して電気的導通を確保できる。半導体装置の場合、金属超微粒子はＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなることが好ましい。また、基材はＡｇ、Ｃｕ又はそれらを主成分とする合金よりなるか、あるいは、基材の表面にＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなるメタライズ層が施されていることが望ましい。また、金属超微粒子と接合される相手側電子部品の表面にも、Ａｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなるメタライズ層が施されていることが望ましい。   In the semiconductor device bonded by the bonding material of the present invention, it is required to provide a metallized layer that can be metallically bonded to the ultrafine metal particles on the component side of the semiconductor device. Thereby, electrical conduction can be ensured through the bonding material. In the case of a semiconductor device, the ultrafine metal particles are preferably made of at least one selected from Au, Ag, Ni and Cu. The base material is made of Ag, Cu or an alloy containing them as a main component, or a metallized layer made of at least one selected from Au, Ag, Ni and Cu is applied to the surface of the base material. It is desirable. Moreover, it is desirable that a metallized layer made of at least one selected from Au, Ag, Ni and Cu is also applied to the surface of the counterpart electronic component to be bonded to the ultrafine metal particles.

以下、図面を用いて、本発明の実施例を説明するが、本発明は、以下の実施形態に限定されるものではない。   Hereinafter, examples of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments.

図１は本発明を適用した絶縁型半導体装置を示したものであり、（ａ）は平面図であり、（ｂ）は（ａ）のＡ−Ａ断面図である。図２は図１の要部を示した斜視図である。   1A and 1B show an insulating semiconductor device to which the present invention is applied, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA in FIG. FIG. 2 is a perspective view showing the main part of FIG.

本実施例において、半導体素子１０１の一方の面は、図示しないコレクタ電極が、本発明の金属超微粒子使用接合材１０５によって、セラミックス絶縁基板１０３上の配線層１０２に接合されている。セラミックス絶縁基板１０３は支持部材１１０に半田層１０９を介して接合されている。セラミックス絶縁基板１０３と配線層１０２をもって配線基板と称する。配線層１０２はＣｕ配線にＡｕまたはＮｉめっきを施したものである。金属超微粒子使用接合材１０５は厚さ１００μｍのＡｇ板の表面に粒径１ｎｍ〜１００ｎｍのＡｇ粒子よりなる粒子層を形成したものである。半導体素子１０１の他方の面は、エミッタ電極が接続用端子２０１と本発明の金属超微粒子使用接合材に用いて接合されており、接続用端子２０１はセラミックス絶縁基板１０３上の配線層１０４と本発明の金属超微粒子使用接合材を用いて接合されている。なお、図１における他の符号は、それぞれ、ケース１１１、外部端子１１２、ボンディングワイヤ１１３、封止材１１４を示している。   In this embodiment, a collector electrode (not shown) is bonded to the wiring layer 102 on the ceramic insulating substrate 103 on one surface of the semiconductor element 101 by the bonding material 105 using ultrafine metal particles of the present invention. The ceramic insulating substrate 103 is bonded to the support member 110 via the solder layer 109. The ceramic insulating substrate 103 and the wiring layer 102 are referred to as a wiring substrate. The wiring layer 102 is obtained by applying Cu or Au plating to Cu wiring. The metal ultrafine particle bonding material 105 is obtained by forming a particle layer made of Ag particles having a particle diameter of 1 nm to 100 nm on the surface of an Ag plate having a thickness of 100 μm. On the other surface of the semiconductor element 101, the emitter electrode is bonded to the connection terminal 201 using the bonding material using ultrafine metal particles of the present invention, and the connection terminal 201 is connected to the wiring layer 104 on the ceramic insulating substrate 103 and the main surface. Bonding is performed using the bonding material using ultrafine metal particles of the invention. 1 indicate the case 111, the external terminal 112, the bonding wire 113, and the sealing material 114, respectively.

図３は図１における半導体素子搭載部分を拡大して示した断面図である。半導体素子１０１の図示しないコレクタ電極と配線層１０２の接合を行う金属超微粒子使用接合材１０５は、金属基材３０１であるＡｇ板と、Ａｇ超微粒子よりなる粒子層３０２によって構成されている。半導体素子のエミッタ電極１０６と接続用端子２０１の接合を行う金属超微粒子使用接合材２０２及び接続用端子２０１と配線層１０４の接合を行う金属超微粒子使用接合材２０３も、金属超微粒子使用接合材１０５と同様の構成である。また、接続用端子２０１はＣｕまたはＣｕ合金で構成されている。金属超微粒子使用接合材１０５，２０２，２０３による接合は個別に行ってもよいし、同時に行ってもよい。金属超微粒子使用接合材を接合すべき部材の間に配置し、その状態で２５０℃程度の熱を約３分間加え、同時に２．５ＭＰａ程度の圧力を大気中で加えることにより、接合を行うことができる。接合に当たり、超音波振動を加えることもできる。金属超微粒子使用接合材の接合は、金属超微粒子を加熱溶融できる条件であれば、その接合方法にとらわれない。   FIG. 3 is an enlarged cross-sectional view of the semiconductor element mounting portion in FIG. A bonding material 105 using metal ultrafine particles for bonding a collector electrode (not shown) of the semiconductor element 101 and the wiring layer 102 is composed of an Ag plate as a metal substrate 301 and a particle layer 302 made of Ag ultrafine particles. The ultrafine metal particle bonding material 202 for bonding the emitter electrode 106 of the semiconductor element and the connection terminal 201 and the ultrafine metal particle bonding material 203 for bonding the connection terminal 201 and the wiring layer 104 are also used. The configuration is the same as 105. The connection terminal 201 is made of Cu or Cu alloy. Bonding using the metal ultrafine particle bonding materials 105, 202, and 203 may be performed individually or simultaneously. Bonding is performed by placing the metal ultrafine particle bonding material between the members to be bonded, applying heat of about 250 ° C. for about 3 minutes, and simultaneously applying pressure of about 2.5 MPa in the atmosphere. Can do. In joining, ultrasonic vibration can be applied. The joining of the joining material using the ultrafine metal particles is not limited by the joining method as long as the ultrafine metal particles can be heated and melted.

図４は、接合層高さと接合層の厚さ方向に垂直な方向の接合面積との関係を示したものである。（ａ）はバンプを用い、接合面積が増大するように超音波振動を加えて接合した場合である。（ｂ）は本発明の金属超微粒子使用接合材を用いた場合である。従来のバンプを用いた場合には、バンプの接触面すべてが接合面にならないため、（ｃ）に示すように接合面積が極端に少なくなる領域が存在する。これに対して、本発明では接合面積が小さくなる領域は存在せず、接合面積の変化は３０％程度に抑えることができる。   FIG. 4 shows the relationship between the bonding layer height and the bonding area in the direction perpendicular to the thickness direction of the bonding layer. (A) is a case where bumps are used and bonded by applying ultrasonic vibration so as to increase the bonding area. (B) is a case where the bonding material using ultrafine metal particles of the present invention is used. When conventional bumps are used, since all the contact surfaces of the bumps do not become bonding surfaces, there is a region where the bonding area becomes extremely small as shown in FIG. On the other hand, in the present invention, there is no region where the bonding area is reduced, and the change in the bonding area can be suppressed to about 30%.

図５は、半導体素子１０１と配線基板１５０を本発明による金属超微粒子使用接合材を用いて接合して接合層１６０を形成した場合（ａ）と、Ａｇペースト材を用いて接合して接合層１７０を形成した場合（ｂ）について、接合層の状態を示した断面図である。Ａｇペースト材を使用した場合には、（ｂ）に示すように接合層が半導体素子の側面を覆い、短絡が起こりやすくなる。これに対して、本発明の場合には、（ａ）に示すように接合層によって半導体素子の側面が覆われるのを防止できる。   FIG. 5 shows a case where the semiconductor element 101 and the wiring substrate 150 are bonded using the metal ultrafine particle bonding material according to the present invention to form the bonding layer 160 (a), and the bonding layer 160 is bonded using the Ag paste material. It is sectional drawing which showed the state of the joining layer about the case where 170 is formed (b). When an Ag paste material is used, the bonding layer covers the side surface of the semiconductor element as shown in FIG. On the other hand, in the case of the present invention, it is possible to prevent the side surface of the semiconductor element from being covered with the bonding layer as shown in FIG.

図６は、本発明の接合部位に対して行った耐熱性評価結果を示したもので、接合サンプルを大気中２５０℃に熱せられた炉内に放置し、放置時間に対する接合強度を調査した結果である。縦軸はせん断強度を示し、初期値すなわち放置時間がゼロのときの値で割って規格化した。接合条件は大気中で２５０℃に３分加熱、加圧は２．５ＭＰａとした。比較のために、９５Ｐｂ−５Ｓｎはんだ（融点約３００℃）のそれも示した。この結果によると、本発明サンプルは１０００時間後でも殆ど強度劣化はなく、耐熱性が確保できていることが判った。本発明の接合材は、高温環境での使用が期待されるＳｉＣ半導体デバイスへの適用に適していると言える。これに対して、従来の高融点はんだ材では、初期は本発明材より優れているものの、高温放置後は強度劣化が大きく、耐熱性は確保できない。   FIG. 6 shows the results of the heat resistance evaluation performed on the bonded portion of the present invention. The result of investigating the bonding strength with respect to the standing time by leaving the bonded sample in a furnace heated to 250 ° C. in the atmosphere. It is. The vertical axis represents the shear strength and normalized by dividing by the initial value, that is, the value when the standing time is zero. The bonding conditions were heating at 250 ° C. for 3 minutes in the atmosphere, and the pressure was 2.5 MPa. For comparison, that of 95Pb-5Sn solder (melting point: about 300 ° C.) is also shown. According to this result, it was found that the sample of the present invention hardly deteriorated in strength even after 1000 hours, and heat resistance could be secured. It can be said that the bonding material of the present invention is suitable for application to a SiC semiconductor device expected to be used in a high temperature environment. On the other hand, although the conventional high melting point solder material is superior to the material of the present invention in the initial stage, the strength is greatly deteriorated after being left at a high temperature, and the heat resistance cannot be ensured.

図７（ａ）及び（ｂ）は、放熱性評価として本発明の接合材及び従来の９５Ｐｂ−５Ｓｎはんだ（融点約３００℃）材を用いたパワー半導体モジュールに対して、熱抵抗評価結果を示したもので、接合条件は図５と同様である。縦軸は従来例のモジュールの定常値で規格化した値、横軸は投入時間である。定常値を比較すると、従来品に比べて本発明品は３０％程度小さく、放熱性が向上していることが確認できた。従って、本発明は、より電流密度が大きいパワー半導体モジュールへの適用に適していると言える。   FIGS. 7A and 7B show thermal resistance evaluation results for a power semiconductor module using the bonding material of the present invention and a conventional 95Pb-5Sn solder (melting point: about 300 ° C.) as a heat dissipation evaluation. The joining conditions are the same as in FIG. The vertical axis is the value normalized by the steady value of the module of the conventional example, and the horizontal axis is the input time. Comparing steady values, it was confirmed that the product of the present invention was about 30% smaller than the conventional product, and the heat dissipation was improved. Therefore, it can be said that the present invention is suitable for application to a power semiconductor module having a higher current density.

次に、本実施例による半導体装置の好ましい例について説明する。   Next, a preferred example of the semiconductor device according to the present embodiment will be described.

図３に示す金属超微粒子接合材１０５、２０２、２０３はいずれも電流が流れる部位である。このため、粒子層の材料にはＡｕ、Ａｇ等を主成分としたナノサイズ粒子とミクロンサイズ粒子の混合材を用い、ミクロンサイズの粒子により電気伝導性の向上を図ることが特に望ましい。ナノサイズ粒子とミクロンサイズ粒子の混合材による接合は２００℃以下でも行うことができる。ナノサイズの粒子を含有させることにより２００℃以下の低温で固溶体を形成し、接合することができる。また、金属基材はＣｕあるいはＣｕ合金で構成することが好ましい。Ｃｕ又はその合金の熱膨張係数は約８〜１６ｐｐｍ／℃である。セラミックス絶縁基板１０３には窒化珪素を用いることが好ましい。窒化珪素の熱膨張係数は約９ｐｐｍ／℃である。   All of the metal ultrafine particle bonding materials 105, 202, and 203 shown in FIG. 3 are portions through which current flows. For this reason, it is particularly desirable to use a mixture of nano-sized particles and micron-sized particles mainly composed of Au, Ag, etc. as the material of the particle layer, and to improve the electrical conductivity with the micron-sized particles. Bonding with a mixture of nano-sized particles and micron-sized particles can be performed even at 200 ° C. or lower. By containing nano-sized particles, a solid solution can be formed and bonded at a low temperature of 200 ° C. or lower. The metal substrate is preferably made of Cu or a Cu alloy. The thermal expansion coefficient of Cu or its alloy is about 8-16 ppm / ° C. Silicon nitride is preferably used for the ceramic insulating substrate 103. The thermal expansion coefficient of silicon nitride is about 9 ppm / ° C.

本構造のパワー半導体モジュールは、半導体素子１０１と熱膨張係数が約９ｐｐｍ／℃の絶縁配線基板とが、熱膨張係数８〜１６ｐｐｍ／℃の接合材を介して接合されているため、高温環境で顕著になる各部材の熱膨張差に起因する熱応力を小さくすることができる。理想的には接合材の熱膨張係数を配線基板のそれに一致させることで、接合材に生じる熱応力が最小になり、長期信頼性が向上する。   In the power semiconductor module of this structure, since the semiconductor element 101 and the insulating wiring board having a thermal expansion coefficient of about 9 ppm / ° C. are bonded via a bonding material having a thermal expansion coefficient of 8 to 16 ppm / ° C. It is possible to reduce the thermal stress caused by the significant difference in thermal expansion of each member. Ideally, by matching the thermal expansion coefficient of the bonding material to that of the wiring board, the thermal stress generated in the bonding material is minimized, and long-term reliability is improved.

本発明の半導体装置は各種の電力変換装置に適用することができる。電力変換装置に本発明の半導体装置を適用することによって、高温環境の場所に搭載でき、かつ専用の冷却器を持たなくても長期的な信頼性を確保することが可能になる。   The semiconductor device of the present invention can be applied to various power conversion devices. By applying the semiconductor device of the present invention to the power conversion device, long-term reliability can be ensured even if it can be mounted in a place of a high temperature environment and does not have a dedicated cooler.

図８は半導体装置の回路を説明する図である。４個のＭＯＳ ＦＥＴ素子４０１が並列に配置された２系統のブロック９１０を有し、各ブロック９１０は直列に接続され、入力主端子３０ｉｎ、出力主端子３０ｏｕｔ、補助端子３１が所定部から引き出されて半導体装置９００の要部を構成している。また、この回路の稼働時における温度検出用サーミスタ３４が半導体装置９００内に独立して配置されている。   FIG. 8 illustrates a circuit of a semiconductor device. There are two systems of blocks 910 in which four MOS FET elements 401 are arranged in parallel. Each block 910 is connected in series, and an input main terminal 30in, an output main terminal 30out, and an auxiliary terminal 31 are drawn from a predetermined portion. The main part of the semiconductor device 900 is configured. Further, the thermistor 34 for temperature detection during operation of this circuit is disposed independently in the semiconductor device 900.

また、インバータ装置及び電動機は、電気自動車にその動力源として組み込むことができる。この自動車においては、動力源から車輪に至る駆動機構を簡素化できたため、ギヤーの噛込み比率の違いにより変速していた従来の自動車に比べ、変速時のショックが軽減され、スムーズな走行が可能で、振動や騒音の面でも従来よりも軽減することができる。なお、本実施例の半導体装置９００は、図９に示すハイブリッド自動車電動機９６０の回転数制御用インバータ装置に組み込むことが可能である。   Further, the inverter device and the electric motor can be incorporated in the electric vehicle as a power source. In this vehicle, the drive mechanism from the power source to the wheels has been simplified, so the shock at the time of shifting is reduced and smooth running is possible compared to the conventional vehicle that has been shifting due to the difference in gear engagement ratio. Thus, vibration and noise can be reduced as compared with the conventional case. Note that the semiconductor device 900 of this embodiment can be incorporated in the inverter device for controlling the rotational speed of the hybrid vehicle electric motor 960 shown in FIG.

更に、本実施例の半導体装置９００を組み込んだインバータ装置は冷暖房機に組み込むことも可能である。この際、従来の交流電動機を用いた場合よりも高い効率を得ることができる。これにより、冷暖房機使用時の電力消費を低減することができる。また、室内の温度が運転開始から設定温度に到達するまでの時間を、従来の交流電動機を用いた場合よりも短縮できる。   Furthermore, the inverter device incorporating the semiconductor device 900 of this embodiment can be incorporated into an air conditioner. In this case, higher efficiency can be obtained than when a conventional AC motor is used. Thereby, the power consumption at the time of air-conditioning machine use can be reduced. Moreover, the time until the room temperature reaches the set temperature from the start of operation can be shortened compared to the case where the conventional AC motor is used.

本実施例と同様の効果は、半導体装置９００が他の流体を撹拌又は流動させる装置、例えば洗濯機、流体循環装置等に組み込まれた場合でも享受できる。   The same effect as that of the present embodiment can be enjoyed even when the semiconductor device 900 is incorporated in a device that stirs or flows another fluid, such as a washing machine or a fluid circulation device.

図１０は本発明の変形例として、半導体素子１０１とセラミックス絶縁基板１０３上の配線層１０２との接合を、Ｓｎ系はんだを用いて行い、半導体素子１０１と接続用端子２０１との接合を本発明の金属超微粒子使用接合材を用いて行った場合を示している。また、図１１は、半導体素子１０１とセラミックス絶縁基板上の配線層との接合にのみ、本発明の金属超微粒子使用接合材を用いた場合を示している。   FIG. 10 shows, as a modification of the present invention, the bonding between the semiconductor element 101 and the wiring layer 102 on the ceramic insulating substrate 103 is performed using Sn-based solder, and the bonding between the semiconductor element 101 and the connection terminal 201 is performed according to the present invention. This shows the case of using a bonding material using ultrafine metal particles. FIG. 11 shows the case where the bonding material using ultrafine metal particles of the present invention is used only for bonding the semiconductor element 101 and the wiring layer on the ceramic insulating substrate.

また、図１２は、金属超微粒子使用接合材における金属基材を、同一の材料よりなる一枚の金属板により構成するのはなく、複数の部材を組み合わせて一枚の板にした場合を示している。この場合、基材はその全てが金属で構成されるのではなく、金属導体３１１と絶縁体３１２により構成することも可能である。これによっても、電気的導通を確保することができる。   Further, FIG. 12 shows a case where the metal base material in the joining material using ultrafine metal particles is not constituted by a single metal plate made of the same material, but a plurality of members are combined into a single plate. ing. In this case, the base material is not entirely composed of metal, but can be composed of the metal conductor 311 and the insulator 312. Also by this, electrical conduction can be ensured.

なお、本発明の金属超微粒子仕様接合材は、例えばＬＥＤバックライトのような発熱が大きい部位の接合にも適用可能である。   In addition, the metal ultrafine particle specification bonding material of the present invention can also be applied to bonding at a portion where heat generation is large, such as an LED backlight.

（ａ）は本発明の位置実施例による絶縁型半導体装置の平面図、（ｂ）はＡ−Ａ断面図である。(A) is a top view of the insulation type semiconductor device by the position example of this invention, (b) is AA sectional drawing. 図１の要部を示した斜視図である。It is the perspective view which showed the principal part of FIG. 図１における半導体素子搭載部分を拡大して示した断面図である。It is sectional drawing which expanded and showed the semiconductor element mounting part in FIG. 本発明の特徴を説明する図である。It is a figure explaining the characteristic of this invention. 本発明と従来のバンプによる接合方法とを比較した説明図である。It is explanatory drawing which compared this invention and the joining method by the conventional bump. 本発明による接合部の耐熱性を示す図である。It is a figure which shows the heat resistance of the junction part by this invention. 本発明による接合部の放熱性を示した図である。It is the figure which showed the heat dissipation of the junction part by this invention. 半導体装置の回路図である。It is a circuit diagram of a semiconductor device. ハイブリッド自動車電動機の回転数制御用インバータ装置を示す概略図である。It is the schematic which shows the inverter apparatus for rotation speed control of a hybrid vehicle electric motor. 本発明の他の実施例を示した断面図である。It is sectional drawing which showed the other Example of this invention. 本発明のさらに他の実施例を示す断面図である。It is sectional drawing which shows other Example of this invention. 金属超微粒子使用接合材の他の例を示した図である。It is the figure which showed the other example of the joining material using a metal ultrafine particle.

符号の説明Explanation of symbols

１０１…半導体素子、１０２…配線層、１０３…セラミックス絶縁基板、１０４…配線層、１０５…金属超微粒子接合材、１０６…エミッタ電極、１１０…支持部材、２０１…接続用端子、２０２…金属超微粒子使用接合材、２０３…金属超微粒子使用接合材、３０１…金属基材、３０２…粒子層。   DESCRIPTION OF SYMBOLS 101 ... Semiconductor element, 102 ... Wiring layer, 103 ... Ceramics insulating substrate, 104 ... Wiring layer, 105 ... Metal ultrafine particle bonding material, 106 ... Emitter electrode, 110 ... Support member, 201 ... Connection terminal, 202 ... Metal ultrafine particle Bonding material used, 203... Bonding material using ultrafine metal particles, 301... Metal substrate, 302.

Claims (11)

基材の表面に、粒径が１〜１００ｎｍの金属超微粒子を含む粒子層を有する金属超微粒子使用接合材において、前記基材が金属で構成され、前記基材の少なくとも表面が前記金属超微粒子と金属結合する材料で構成されていることを特徴とする金属超微粒子使用接合材。   In a bonding material using metal ultrafine particles having a particle layer containing metal ultrafine particles having a particle diameter of 1 to 100 nm on the surface of the substrate, the substrate is made of metal, and at least the surface of the substrate is the metal ultrafine particles A bonding material using ultrafine metal particles, characterized in that it is made of a material that bonds with metal. 請求項１において、前記金属超微粒子がＡｕ、Ａｇ、Ｎｉ、Ｃｕ、Ａｌ、Ｚｎ、Ｓｎ、Ｉｎ、Ｂｉ及びＳｂから選ばれた少なくとも１種よりなることを特徴とする金属超微粒子使用接合材。   The bonding material using metal ultrafine particles according to claim 1, wherein the metal ultrafine particles comprise at least one selected from Au, Ag, Ni, Cu, Al, Zn, Sn, In, Bi, and Sb. 請求項１において、前記金属超微粒子がＡｕ、Ａｇ、Ｎｉ、Ｃｕ、Ａｌ、Ｚｎ、Ｓｎ、Ｉｎ、Ｂｉ及びＳｂから選ばれた少なくとも１種よりなり、前記基材がＡｇ、Ｃｕ又はそれらを主成分とする合金よりなることを特徴とする金属超微粒子使用接合材。   In Claim 1, the said metal ultrafine particle consists of at least 1 sort (s) chosen from Au, Ag, Ni, Cu, Al, Zn, Sn, In, Bi, and Sb, and the said base material is mainly Ag, Cu, or them. A bonding material using ultrafine metal particles, comprising an alloy as a component. 請求項１において、前記金属超微粒子がＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなり、前記基材の表面にＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなるメタライズ層を有することを特徴とする金属超微粒子使用接合材。   2. The metallization according to claim 1, wherein the ultrafine metal particles are made of at least one selected from Au, Ag, Ni, and Cu, and the surface of the substrate is made of at least one selected from Au, Ag, Ni, and Cu. A bonding material using ultrafine metal particles, comprising a layer. 基材の表面に、粒径が１〜１００ｎｍの金属超微粒子を含む粒子層を有し、前記粒子層が有機物で被覆されている金属超微粒子使用接合材において、前記基材が金属で構成され、前記基材の少なくとも表面が前記金属超微粒子と金属結合する材料で構成されていることを特徴とする金属超微粒子使用接合材。   In the bonding material using ultrafine metal particles, which has a particle layer containing ultrafine metal particles having a particle diameter of 1 to 100 nm on the surface of the substrate, and the fine particle layer is coated with an organic substance, the substrate is made of metal. A bonding material using ultrafine metal particles, characterized in that at least the surface of the substrate is made of a material that is metal-bonded to the ultrafine metal particles. 半導体素子の電極と前記半導体素子の電気信号を外部に取り出す配線とが接合材によって接合されている半導体装置において、前記接合材が金属基材の表面に粒径１〜１００ｎｍの金属超微粒子を含む粒子層を有し、前記基材の少なくとも表面が前記金属超微粒子と金属結合する材料で構成されている金属超微粒子使用接合材によって構成されており、前記金属超微粒子使用接合材と相対する側の表面に前記金属超微粒子と金属結合する材料のメタライズ層が施されていることを特徴とする半導体装置。   In a semiconductor device in which an electrode of a semiconductor element and a wiring for taking out an electrical signal of the semiconductor element are bonded to each other by a bonding material, the bonding material includes metal ultrafine particles having a particle diameter of 1 to 100 nm on a surface of a metal base material A side having a particle layer, at least a surface of the base material is composed of a bonding material using ultra-fine metal particles composed of a material that forms a metal bond with the ultra-fine metal particles, and is opposite to the bonding material using the ultra-fine metal particles A metallized layer of a material that is metal-bonded to the ultrafine metal particles is applied to the surface of the semiconductor device. 請求項６において、前記金属超微粒子がＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなり、前記基材の表面及び前記金属超微粒子使用接合材と相対する側の部品の表面にＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなるメタライズ層を有することを特徴とする半導体装置。   In Claim 6, the said metal ultrafine particle consists of at least 1 sort (s) chosen from Au, Ag, Ni, and Cu, and Au on the surface of the said base material and the surface of the component facing the said metal ultrafine particle use bonding material. A semiconductor device having a metallized layer made of at least one selected from Ag, Ni, and Cu. 請求項６において、前記金属超微粒子がＡｕ、Ａｇ、Ｎｉ及びＣｕから選ばれた少なくとも１種よりなり、前記基材がＡｇ、Ｃｕ又はそれらを主成分とする合金よりなることを特徴とする半導体装置。   7. The semiconductor according to claim 6, wherein the ultrafine metal particles are made of at least one selected from Au, Ag, Ni and Cu, and the base is made of Ag, Cu or an alloy containing them as a main component. apparatus. 請求項６において、前記半導体素子が配線基板の上に搭載され、前記半導体素子のエミッタ電極が配線に接続された構造を有し、前記半導体素子のコレクタ電極と前記配線基板との接合部及び前記エミッタ電極と前記配線との接合部の少なくとも一方が前記金属超微粒子使用接合材により接合されていることを特徴とする半導体装置。   7. The semiconductor device according to claim 6, wherein the semiconductor element is mounted on a wiring board, and an emitter electrode of the semiconductor element is connected to a wiring, and a junction between the collector electrode of the semiconductor element and the wiring board; A semiconductor device, wherein at least one of the junctions between the emitter electrode and the wiring is bonded by the metal ultrafine particle bonding material. 請求項６に記載の半導体装置を内蔵していることを特徴とする電力変換装置。   A power conversion device comprising the semiconductor device according to claim 6. 請求項１０に記載の電力変換装置がエンジンルームに搭載されることを特徴とするハイブリット自動車。   A hybrid vehicle comprising the power conversion device according to claim 10 mounted in an engine room.
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