JP2007209166A - Inverter, and refrigeration cycle device - Google Patents

Inverter, and refrigeration cycle device Download PDF

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JP2007209166A
JP2007209166A JP2006027165A JP2006027165A JP2007209166A JP 2007209166 A JP2007209166 A JP 2007209166A JP 2006027165 A JP2006027165 A JP 2006027165A JP 2006027165 A JP2006027165 A JP 2006027165A JP 2007209166 A JP2007209166 A JP 2007209166A
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circuit
voltage
mosfet
power supply
supply circuit
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Shinya Shimizu
慎也 清水
Tomoaki Toshi
年百明 利
Hiroshi Mochikawa
宏 餅川
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Toshiba Corp
Toshiba Carrier Corp
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Toshiba Carrier Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an inverter in which safety can be assured when a reverse voltage application circuit causes short circuit fault, by stopping operation of that reverse voltage application circuit, and to provide a refrigeration cycle device. <P>SOLUTION: The inverter 1 comprises a low voltage power supply circuit 50 outputting a low voltage for driving MOSFETs 4u, 4v and 4w and for operating reverse voltage application circuits 6u, 6v and 6w. Output voltage from the low voltage power supply circuit 50 is detected by a protective section 63 and when the detected voltage is lower than a predetermined level, output from the low voltage power supply circuit 50 is stopped by the protective section 63. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は、たとえば圧縮機を駆動するインバータ装置、およびそのようなインバータ装置を用いて圧縮機を駆動する冷凍サイクル装置に関する。   The present invention relates to an inverter device that drives a compressor, for example, and a refrigeration cycle device that drives a compressor using such an inverter device.

ブラシレスＤＣモータのような誘導性負荷を駆動するインバータ装置は、電圧の印加方向に沿って上流側および下流側となる２つのスイッチング素子の直列回路を複数備え、これら直列回路の上流側スイッチング素子と下流側スイッチング素子の相互接続点がブラシレスＤＣモータの各相巻線に接続される。各スイッチング素子は、還流ダイオード（寄生ダイオードともいう）を有している。   An inverter device for driving an inductive load such as a brushless DC motor includes a plurality of series circuits of two switching elements on the upstream side and the downstream side in the voltage application direction, and the upstream side switching elements of these series circuits and The interconnection point of the downstream switching element is connected to each phase winding of the brushless DC motor. Each switching element has a free wheel diode (also referred to as a parasitic diode).

スイッチング素子としては、最近、ＩＧＢＴやＭＯＳＦＥＴが多く採用されている。ＭＯＳＦＥＴを用いている場合、ＭＯＳＦＥＴのオン，オフ速度が速いため高周波スイッチングが可能というメリットがあり、また低電圧出力時のロスが小さいことからファンモータ等の出力の小さいモータを駆動する場合に多用される。   Recently, many IGBTs and MOSFETs have been adopted as switching elements. When a MOSFET is used, there is a merit that high-frequency switching is possible because the on / off speed of the MOSFET is fast, and it is frequently used when driving a motor with a small output such as a fan motor because the loss at low voltage output is small. Is done.

ただし、ＭＯＳＦＥＴでは、素子製造の過程において同じ素子上に作られる還流ダイオードの逆回復特性が悪いという問題がある。近年、オン時の抵抗が低くてスイッチング特性にすぐれたスーパージャンクションＭＯＳＦＥＴが開発されているが、このスーパージャンクションＭＯＳＦＥＴにおいては、素子上に形成される還流ダイオードの逆回復特性がますます悪いものとなっている。   However, in MOSFET, there is a problem that reverse recovery characteristics of a free-wheeling diode made on the same element in the process of manufacturing the element are poor. In recent years, super junction MOSFETs have been developed that have low on-state resistance and excellent switching characteristics. However, in this super junction MOSFET, the reverse recovery characteristics of the freewheeling diode formed on the device become worse. ing.

還流ダイオードの逆回復特性が悪いと、次の不具合を生じる。すなわち、ＭＯＳＦＥＴがオフしたとき、誘導性負荷に蓄えられたエネルギによってＭＯＳＦＥＴの還流ダイオードに順方向電流（還流電流ともいう）が流れるが、その状態で、同じ直列回路の他方のスイッチング素子がオンしてＭＯＳＦＥＴに直流電圧が加わると、還流ダイオードに蓄えられた電荷による大きな逆回復電流（スパイク電流ともいう）が還流ダイオードに流れる。この逆回復電流は、大きな電力損失となる。また、この電力損失の多くは、ＭＯＳＦＥＴと対となる他方のスイッチング素子のオン時の発熱となり、これが大きくなると他方のスイッチング素子がその熱によって破壊するという問題がある。   If the reverse recovery characteristic of the freewheeling diode is poor, the following problems occur. That is, when the MOSFET is turned off, the forward current (also called the reflux current) flows to the MOSFET's freewheeling diode due to the energy stored in the inductive load. In this state, the other switching element of the same series circuit is turned on. When a DC voltage is applied to the MOSFET, a large reverse recovery current (also referred to as a spike current) due to the charge stored in the freewheeling diode flows through the freewheeling diode. This reverse recovery current results in a large power loss. In addition, most of the power loss is generated when the other switching element paired with the MOSFET is turned on, and when this is increased, the other switching element is destroyed by the heat.

このようなことから、たとえば空気調和機のコンプレッサモータを駆動するような大きな電流が流れるインバータにＭＯＳＦＥＴを採用することは、非常に難しい。   For this reason, it is very difficult to employ a MOSFET for an inverter through which a large current flows, for example, to drive a compressor motor of an air conditioner.

そこで、従来、上記他方のスイッチング素子のオンに先立ってＭＯＳＦＥＴの還流ダイオードに逆電圧を印加する逆電圧印加回路を設け、この逆電圧の印加によって還流ダイオードに流れる逆回復電流を防止し、電力損失の低減を図るものがある（例えば、特許文献１）。
特開平１０−３２７５８５号公報 Therefore, conventionally, a reverse voltage application circuit for applying a reverse voltage to the freewheeling diode of the MOSFET is provided prior to turning on the other switching element, and the reverse recovery current flowing to the freewheeling diode is prevented by the application of the reverse voltage. (For example, Patent Document 1).
Japanese Patent Laid-Open No. 10-327585

上記のような逆電圧印加回路を採用した場合、逆回復電流による電力損失が抑えられるため、コンプレッサモータ駆動用などの大出力モータにもスイッチング素子としてＭＯＳＦＥＴの採用が可能となるが、万が一、逆電圧印加回路に破壊や特性劣化等で短絡する故障（短絡故障）が生じると、逆回復電流を防止するための正規のタイミング以外に、ＭＯＳＦＥＴのオン中に、逆電圧印加回路からＭＯＳＦＥＴまたはモータ巻線に電流が流れ続ける。この結果、逆電圧印加回路中の回路素子の異常温度上昇を引き起こし、他の回路を破壊してしまうなどの不具合が発生するおそれがあった。   When the reverse voltage application circuit as described above is adopted, power loss due to reverse recovery current can be suppressed, so that a MOSFET can be adopted as a switching element for a large output motor for driving a compressor motor or the like. If a failure (short-circuit failure) occurs due to breakdown or deterioration of characteristics in the voltage application circuit, the reverse voltage application circuit may turn on the MOSFET or motor winding while the MOSFET is on, in addition to the normal timing for preventing reverse recovery current. Current continues to flow through the wire. As a result, there is a possibility that a malfunction such as an abnormal temperature rise of the circuit element in the reverse voltage application circuit and destruction of other circuits may occur.

この発明は、上記の事情を考慮したもので、逆電圧印加回路が短絡故障を起こした場合にその逆電圧印加回路の動作を停止して安全を確保することができるインバータ装置およびこのインバータ装置を用いた冷凍サイクル装置を提供することを目的とする。   In consideration of the above circumstances, the present invention provides an inverter device capable of stopping the operation of the reverse voltage application circuit and ensuring safety when the reverse voltage application circuit causes a short circuit failure, and the inverter device. It aims at providing the used refrigeration cycle apparatus.

請求項１に係る発明のインバータ装置は、還流ダイオードを有するＭＯＳＦＥＴを少なくとも一方に用いた２つのスイッチング素子の直列回路を複数備え、これら直列回路の各スイッチング素子の相互接続点が負荷に接続されるスイッチング回路と、上記各スイッチング素子のオン，オフ動作を制御する制御手段と、上記ＭＯＳＦＥＴと同じ直列回路の他方のスイッチング素子のオンに先立ち、同ＭＯＳＦＥＴの還流ダイオードに逆電圧を印加する逆電圧印加回路と、上記ＭＯＳＦＥＴの駆動用および上記逆電圧印加回路の動作用の低電圧を出力する低電圧電源回路と、この低電圧電源回路の出力電圧を検出し、検出した電圧が所定値以下の場合に、上記低電圧電源回路の出力を停止する保護手段と、を備えている。   The inverter device of the invention according to claim 1 includes a plurality of series circuits of two switching elements using at least one of MOSFETs having a freewheeling diode, and an interconnection point of each switching element of these series circuits is connected to a load. Prior to turning on the other switching element of the same series circuit as the MOSFET, reverse voltage application for applying a reverse voltage to the free-wheeling diode of the MOSFET, switching means, control means for controlling the on / off operation of each switching element A circuit, a low voltage power supply circuit that outputs a low voltage for driving the MOSFET and an operation of the reverse voltage applying circuit, and an output voltage of the low voltage power supply circuit is detected, and the detected voltage is not more than a predetermined value And a protective means for stopping the output of the low-voltage power supply circuit.

この発明のインバータ装置および冷凍サイクル装置によれば、逆電圧印加回路が短絡故障を起こした場合に、その逆電圧印加回路の動作を停止することができる。これにより、逆電圧印加回路中の回路素子の異常温度上昇を回避して、他の回路の破壊を防ぐことができ、十分な安全を確保することができる   According to the inverter device and the refrigeration cycle device of the present invention, when the reverse voltage application circuit causes a short circuit failure, the operation of the reverse voltage application circuit can be stopped. Thereby, an abnormal temperature rise of the circuit element in the reverse voltage application circuit can be avoided, destruction of other circuits can be prevented, and sufficient safety can be ensured.

以下、この発明の一実施形態について図面を参照して説明する。
図１において、Ｍは冷凍サイクル装置の一種である空気調和機のコンプレッサモータとして使用されるブラシレスＤＣモータ（負荷）で、星形結線された３つの相巻線Ｌｕ，Ｌｖ，Ｌｗを有するステータ、および永久磁石を有するロータにより構成されている。相巻線Ｌｕ，Ｌｖ，Ｌｗに電流が流れることにより生じる磁界と永久磁石が作る磁界との相互作用により、ロータが回転する。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In FIG. 1, M is a brushless DC motor (load) used as a compressor motor of an air conditioner that is a kind of refrigeration cycle apparatus, and has a stator having three phase windings Lu, Lv, Lw connected in a star shape, And a rotor having permanent magnets. The rotor rotates due to the interaction between the magnetic field generated by the current flowing through the phase windings Lu, Lv, and Lw and the magnetic field generated by the permanent magnet.

このブラシレスＤＣモータＭが動力源として圧縮機２０に収容されている。冷房時、この圧縮機２０から吐出される冷媒が実線矢印で示すように四方弁２１を介して室外熱交換器２２に流れ、その室外熱交換器２２を経た冷媒が膨張弁２３を介して室内熱交換器２４に流れる。そして、室内熱交換器２４を経た冷媒が、上記四方弁２１を介して圧縮機２０に吸込まれる。これにより、室外熱交換器２２が凝縮器、室内熱交換器２４が蒸発器として機能する。暖房時は、四方弁２１が切換わることにより、破線矢印で示す方向に冷媒が流れ、室内熱交換器２４が凝縮器、室外熱交換器２２が蒸発器として機能する。   The brushless DC motor M is accommodated in the compressor 20 as a power source. During cooling, the refrigerant discharged from the compressor 20 flows to the outdoor heat exchanger 22 via the four-way valve 21 as indicated by the solid line arrow, and the refrigerant passing through the outdoor heat exchanger 22 passes through the expansion valve 23 to the room. It flows to the heat exchanger 24. Then, the refrigerant that has passed through the indoor heat exchanger 24 is sucked into the compressor 20 through the four-way valve 21. Thereby, the outdoor heat exchanger 22 functions as a condenser, and the indoor heat exchanger 24 functions as an evaporator. At the time of heating, the four-way valve 21 is switched, whereby the refrigerant flows in the direction indicated by the broken-line arrow, and the indoor heat exchanger 24 functions as a condenser and the outdoor heat exchanger 22 functions as an evaporator.

上記ブラシレスＤＣモータＭに、インバータ装置１が接続されている。このインバータ装置１は、商用交流電源３０の電圧を整流する整流回路３１、この整流回路３１の出力端に接続された平滑コンデンサ３２、この平滑コンデンサ３２の両端に接続された端子Ｐ，Ｎ、この端子Ｐ，Ｎ間の直流電圧（例えば直流２８０Ｖ）Ｖｄを受けて上記相巻線Ｌｕ，Ｌｖ，Ｌｗに対する通電およびその通電切換を行うスイッチング回路２、このスイッチング回路２を駆動制御する制御部１０、端子Ｐ，Ｎ間の直流電圧Ｖｄからスイッチング回路２や制御部１０の動作に必要な低電圧を出力する低電圧電源回路５０などにより、構成されている。   An inverter device 1 is connected to the brushless DC motor M. This inverter device 1 includes a rectifier circuit 31 that rectifies the voltage of the commercial AC power supply 30, a smoothing capacitor 32 connected to the output terminal of the rectifier circuit 31, terminals P and N connected to both ends of the smoothing capacitor 32, A switching circuit 2 that receives a DC voltage (for example, DC 280V) Vd between the terminals P and N and performs energization to the phase windings Lu, Lv, and Lw, and switching of the energization, and a control unit 10 that drives and controls the switching circuit 2; The switching circuit 2 and the low voltage power supply circuit 50 that outputs a low voltage necessary for the operation of the control unit 10 from the DC voltage Vd between the terminals P and N are configured.

スイッチング回路２は、直流電圧の印加方向に沿って上流側のスイッチング素子にはＭＯＳＦＥＴ以外のスイッチング素子、たとえばＩＧＢＴ（Insulated Gate Bipolar Transistor）を、下流側のスイッチング素子として低損失パワーＭＯＳＦＥＴ（スーパージャンクションＭＯＳＦＥＴ等）の直列回路をＵ，Ｖ，Ｗの三相分有するもので、Ｕ相の上流側にＩＧＢＴ３ｕ、Ｕ相の下流側にＭＯＳＦＥＴ４ｕ、Ｖ相の上流側にＩＧＢＴ３２ｖ、Ｖ相の下流側にＭＯＳＦＥＴ４ｖ、Ｗ相の上流側にＩＧＢＴ３ｗ、Ｗ相の下流側にＭＯＳＦＥＴ４ｗを備えている。そして、ＩＧＢＴ３ｕ，３ｖ，３ｗに対し、還流ダイオードＤｕ＋，Ｄｖ＋，Ｄｗ＋がそれぞれ逆並列接続されている。ＭＯＳＦＥＴ４ｕ，４ｖ，４ｗに対し、還流ダイオードＤｕ−，Ｄｖ−，Ｄｗ−がそれぞれ逆並列接続されている。これら還流ダイオードは、寄生ダイオードとしてそれぞれ対応するＩＧＢＴおよびＭＯＳＦＥＴの素子本体に内蔵される。   The switching circuit 2 includes a switching element other than a MOSFET, such as an IGBT (Insulated Gate Bipolar Transistor) as an upstream switching element along a DC voltage application direction, and a low-loss power MOSFET (super junction MOSFET) as a downstream switching element. Etc.) is provided for three phases U, V, and W. The IGBT 3u is upstream of the U phase, the MOSFET 4u is downstream of the U phase, the IGBT 32v is upstream of the V phase, and the MOSFET 4v is downstream of the V phase. The IGBT 3w is provided upstream of the W phase, and the MOSFET 4w is provided downstream of the W phase. The free-wheeling diodes Du +, Dv +, and Dw + are connected in reverse parallel to the IGBTs 3u, 3v, and 3w, respectively. The free-wheeling diodes Du−, Dv−, and Dw− are connected in reverse parallel to the MOSFETs 4u, 4v, and 4w, respectively. These free-wheeling diodes are built in the corresponding IGBT and MOSFET element bodies as parasitic diodes.

上記ＭＯＳＦＥＴ４ｕ，４ｖ，４ｗの駆動用として、駆動回路３４ｕ，３４ｖ，３４ｗが設けられている。これら駆動回路３４ｕ，３４ｖ，３４ｗは、低電圧電源回路５０の出力電圧により動作し、制御部１０からの指令に応じてＭＯＳＦＥＴ４ｕ，４ｖ，４ｗをオン，オフ駆動する。同様に、ＩＧＢＴ３ｕ，３ｖ，３ｗ駆動用の駆動回路３３ｕ，３ｖ，３ｗにも低電圧電源回路５０の出力が供給され、これらも制御部１０からの指令に応じてＩＧＢＴ３ｕ，３ｖ，３ｗをオン，オフ駆動する。   Driving circuits 34u, 34v, 34w are provided for driving the MOSFETs 4u, 4v, 4w. These drive circuits 34u, 34v, 34w are operated by the output voltage of the low voltage power supply circuit 50, and drive the MOSFETs 4u, 4v, 4w on and off in accordance with commands from the control unit 10. Similarly, the outputs of the low-voltage power supply circuit 50 are also supplied to the drive circuits 33u, 3v, 3w for driving the IGBTs 3u, 3v, 3w, and these also turn on the IGBTs 3u, 3v, 3w according to a command from the control unit 10, Drive off.

ＩＧＢＴ３ｕとＭＯＳＦＥＴ４ｕの相互接続点、ＩＧＢＴ３ｖとＭＯＳＦＥＴ４ｖの相互接続点、ＩＧＢＴ３ｗとＭＯＳＦＥＴ４ｗの相互接続点に、上記相巻線Ｌｕ，Ｌｖ，Ｌｗのそれぞれ非結線端が接続されている。   The non-connected ends of the phase windings Lu, Lv, and Lw are connected to an interconnection point between the IGBT 3u and the MOSFET 4u, an interconnection point between the IGBT 3v and the MOSFET 4v, and an interconnection point between the IGBT 3w and the MOSFET 4w, respectively.

また、スイッチング回路１は、誘導性負荷である相巻線Ｌｕ，Ｌｖ，Ｌｗに蓄えられたエネルギによって還流ダイオードＤｕ−，Ｄｖ−，Ｄｗ−に順方向電流（還流電流）が流れた場合に、上流側のＩＧＢＴ３ｕ，３ｖ，３ｗのオンに伴って還流ダイオードＤｕ−，Ｄｖ−，Ｄｗ−に流れる逆回復電流Ｉｒｒを抑制するため、ＩＧＢＴ３ｕ，３ｖ，３ｗのそれぞれオンに先立ってＭＯＳＦＥＴ４ｕ，４ｖ，４ｗの還流ダイオードＤｕ−，Ｄｖ−，Ｄｗ−に逆電圧を印加する逆電圧印加回路６ｕ，６ｖ，６ｗを備えている。   In addition, the switching circuit 1 is configured such that when a forward current (reflux current) flows through the freewheeling diodes Du−, Dv−, and Dw− due to the energy stored in the phase windings Lu, Lv, and Lw that are inductive loads, In order to suppress the reverse recovery current Irr flowing through the free-wheeling diodes Du−, Dv−, Dw− as the upstream IGBTs 3u, 3v, 3w are turned on, the MOSFETs 4u, 4v, 4w are turned on prior to turning on the IGBTs 3u, 3v, 3w, respectively. Are provided with reverse voltage application circuits 6u, 6v, 6w for applying reverse voltages to the free-wheeling diodes Du-, Dv-, Dw-.

逆電圧印加回路６ｕは、低電圧電源回路５０の出力電圧を抵抗４１を介して逆電圧印加用コンデンサ４２に印加し、その逆電圧印加用コンデンサ４２の電圧を逆電圧印加用ＭＯＳＦＥＴ４３のドレイン・ソース間、およびダイオード４４を介して、ＭＯＳＦＥＴ４ｕの還流ダイオードＤｕ−に逆電圧として印加する。また、逆電圧印加回路６ｕは、逆電圧印加用ＭＯＳＦＥＴ４３の駆動用として、ゲート駆動回路４６を有している。ゲート駆動回路４６は、低電圧電源回路５０の出力電圧により動作し、制御部１０からの指令に応じて逆電圧印加用のパルス信号を生成して出力する。この出力が逆電圧印加用ＭＯＳＦＥＴ４３のゲートに供給される。
他の逆電圧印加回路６ｖ，６ｗも、逆電圧印加回路６ｕと同じ構成である。よって、その説明は省略する。 The reverse voltage application circuit 6 u applies the output voltage of the low voltage power supply circuit 50 to the reverse voltage application capacitor 42 via the resistor 41, and uses the voltage of the reverse voltage application capacitor 42 as the drain / source of the reverse voltage application MOSFET 43. The reverse voltage is applied to the free-wheeling diode Du− of the MOSFET 4u between and via the diode 44. In addition, the reverse voltage application circuit 6 u has a gate drive circuit 46 for driving the reverse voltage application MOSFET 43. The gate drive circuit 46 operates according to the output voltage of the low voltage power supply circuit 50, and generates and outputs a pulse signal for applying a reverse voltage in response to a command from the control unit 10. This output is supplied to the gate of the reverse voltage application MOSFET 43.
The other reverse voltage application circuits 6v and 6w have the same configuration as the reverse voltage application circuit 6u. Therefore, the description is omitted.

また、ＩＧＢＴとＭＯＳＦＥＴの直列回路におけるＭＯＳＦＥＴの下流側に、それぞれ電流検出用の抵抗７ｕ，７ｖ，７ｗが挿接されている。ＭＯＳＦＥＴ４ｕ，４ｖ，４ｗを通して流れる電流に応じたレベルの電圧が、これら抵抗７ｕ，７ｖ，７ｗに生じる。そして、抵抗７ｕ，７ｖ，７ｗに生じる電圧が、制御部１０に供給される。   In addition, current detection resistors 7u, 7v, and 7w are inserted into the downstream side of the MOSFET in the series circuit of the IGBT and the MOSFET, respectively. A voltage of a level corresponding to the current flowing through the MOSFETs 4u, 4v, 4w is generated in these resistors 7u, 7v, 7w. The voltage generated in the resistors 7u, 7v, and 7w is supplied to the control unit 10.

制御部１０は、抵抗７ｕ，７ｖ，７ｗに生じる電圧からブラシレスＤＣモータＭの各相巻線に流れる電流を検出し、検出した電流からブラシレスＤＣモータＭのロータの回転を検出し、検出した回転に基づく所定のタイミングでスイッチング回路１の各ＩＧＢＴ、各ＭＯＳＦＥＴ、および各逆電圧印加回路を駆動するもので、スイッチング回路１における各直列回路のうち、少なくとも１つの直列回路の上流側のＩＧＢＴのオン，オフ動作、および別の少なくとも１つの直列回路の下流側のＭＯＳＦＥＴのオン，オフ動作による各相巻線への通電を順次に切換える制御手段を有している。   The control unit 10 detects the current flowing through each phase winding of the brushless DC motor M from the voltages generated in the resistors 7u, 7v, and 7w, detects the rotation of the rotor of the brushless DC motor M from the detected current, and detects the detected rotation. Each IGBT, each MOSFET, and each reverse voltage application circuit of the switching circuit 1 are driven at a predetermined timing based on the above. Among the series circuits in the switching circuit 1, the IGBT on the upstream side of at least one series circuit is turned on. , Off operation, and control means for sequentially switching energization to each phase winding by on / off operation of the MOSFET on the downstream side of another at least one series circuit.

上記低電圧電源回路５０の具体的な構成を図２に示している。
すなわち、トランス５１の一次巻線５２ａがスイッチング素子たとえばＦＥＴ５４のドレイン・ソース間を介して直流電源の端子Ｐ，Ｎ間に接続され、そのＦＥＴ５４のゲートが発振制御部６１に接続されている。この発振制御部６１の発振出力信号によりＦＥＴ５４がオン，オフ動作して、トランス５１の二次巻線５３ａ，５３ｂに、端子Ｐ，Ｎ間の直流電圧Ｖｄよりも低いレベルの交流電圧が生じる。そして、二次巻線５３ａに生じる交流電圧がダイオード５５および平滑コンデンサ５６で整流され、整流後の直流電圧、たとえば直流５Ｖ程度の出力が制御部（マイクロコンピュータを含む電子回路）１０に動作用として供給される。さらに、二次巻線５３ｂに生じる交流電圧がダイオード５７および平滑コンデンサ５８で整流され、整流後の直流電圧、たとえば直流１７Ｖ程度の出力が端子Ｑから上記駆動回路３３ｕ，３３ｖ，３３ｗ，３４ｕ，３４ｖ，３４ｗおよび各ゲート駆動回路４６にそれぞれ駆動用として供給される。 A specific configuration of the low-voltage power supply circuit 50 is shown in FIG.
That is, the primary winding 52 a of the transformer 51 is connected between the terminals P and N of the DC power supply via the switching element, for example, between the drain and source of the FET 54, and the gate of the FET 54 is connected to the oscillation control unit 61. The FET 54 is turned on / off by the oscillation output signal of the oscillation control unit 61, and an AC voltage having a level lower than the DC voltage Vd between the terminals P and N is generated in the secondary windings 53 a and 53 b of the transformer 51. Then, the AC voltage generated in the secondary winding 53a is rectified by the diode 55 and the smoothing capacitor 56, and the DC voltage after rectification, for example, the output of about DC 5V is supplied to the control unit (electronic circuit including the microcomputer) 10 for operation. Supplied. Further, the AC voltage generated in the secondary winding 53b is rectified by the diode 57 and the smoothing capacitor 58, and the rectified DC voltage, for example, an output of about 17V DC is output from the terminal Q to the drive circuits 33u, 33v, 33w, 34u, 34v. , 34w and each gate drive circuit 46 are supplied for driving.

トランス５１は検出用の一次巻線（補助巻線）５２ｂを有しており、その一次巻線５２ｂに生じる交流電圧が上記発振制御部６１および保護部６３に供給される。発振制御部６１は、一次巻線５２ｂに生じる交流電圧が予め定められている設定値一定となるよう、発振出力のオン，オフデューティを調節するもので、例えばトランス５１の二次側消費電力が増大して一次巻線５２ｂの電圧が低下すると、それを補うために発振出力のオン，オフデューティを増やし、トランス５１の二次側消費電力が減少して一次巻線５２ｂの電圧が上昇すると、発振出力のオン，オフデューティを減らす制御を行う。なお、低電圧電源回路５０の動作開始時は一次巻線５２ｂに電圧が生じないため、起動部６２から供給される出力設定信号に応じて発振制御部６１の発振出力のオン，オフデューティが設定される。起動部６２は、制御部１０から供給されるオン指令に応じて動作する。   The transformer 51 has a primary winding (auxiliary winding) 52b for detection, and an AC voltage generated in the primary winding 52b is supplied to the oscillation control unit 61 and the protection unit 63. The oscillation control unit 61 adjusts the on / off duty of the oscillation output so that the alternating voltage generated in the primary winding 52b is constant at a predetermined set value. For example, the secondary side power consumption of the transformer 51 is reduced. When the voltage of the primary winding 52b decreases and the voltage of the primary winding 52b decreases, the on / off duty of the oscillation output increases to compensate for this, and when the secondary side power consumption of the transformer 51 decreases and the voltage of the primary winding 52b increases, Control to reduce on / off duty of oscillation output. Since no voltage is generated in the primary winding 52b when the operation of the low voltage power supply circuit 50 is started, the on / off duty of the oscillation output of the oscillation control unit 61 is set according to the output setting signal supplied from the starting unit 62. Is done. The starting unit 62 operates in response to an ON command supplied from the control unit 10.

上記保護部６３は、一次巻線５２ｂに生じる交流電圧に基づいて当該低電圧電源回路５０の出力電圧を検出し、検出した電圧が予め定められた所定値ＶＳ２以下の場合に、発振制御部６１の発振を停止して、当該低電圧電源回路５０の出力を停止する。   The protection unit 63 detects the output voltage of the low-voltage power supply circuit 50 based on the AC voltage generated in the primary winding 52b, and when the detected voltage is equal to or lower than a predetermined value VS2, the oscillation control unit 61 Is stopped and the output of the low-voltage power supply circuit 50 is stopped.

次に、図３を参照しながら、作用について説明する。
低電圧電源回路５０の容量は、それほど大きくない。通常は、低電圧電源回路５０の発振制御部６１は、トランス５１の二次側消費電力が増大して一次巻線５２ｂの電圧が低下した場合、つまり当該低電圧電源回路５０の出力電圧が低下した場合、それを補うために発振出力のオン，オフデューティを増やす制御を実行する。 Next, the operation will be described with reference to FIG.
The capacity of the low voltage power supply circuit 50 is not so large. Normally, the oscillation control unit 61 of the low voltage power supply circuit 50 reduces the output voltage of the low voltage power supply circuit 50 when the secondary side power consumption of the transformer 51 increases and the voltage of the primary winding 52b decreases. In order to compensate for this, control is performed to increase the on / off duty of the oscillation output.

ただし、本実施形態の低電圧電源回路５０の容量は、それほど大きく設定されていない。具体的には、逆電圧印加回路６ｕ，６ｖ，６ｗのいずれかに短絡電流が生じ、逆電圧印加回路６ｕ，６ｖ，６ｗからＭＯＳＦＥＴ４ｕ，４ｖ，４ｗ側に電流が流れ続けた場合には出力電流を供給し続けることができない容量、すなわち、その出力電圧が低下する容量に設定されている。   However, the capacity of the low voltage power supply circuit 50 of the present embodiment is not set so large. Specifically, when a short-circuit current occurs in any of the reverse voltage application circuits 6u, 6v, 6w, and the current continues to flow from the reverse voltage application circuits 6u, 6v, 6w to the MOSFETs 4u, 4v, 4w, the output current Is set to a capacity at which the output voltage cannot be kept, that is, a capacity at which the output voltage decreases.

このため、逆電圧印加回路６ｕ，６ｖ，６ｗのいずれかに破壊や特性劣化等による短絡故障が生じると、発振制御部６１のオン，オフデューティの増大制御にもかかわらず、低電圧電源回路５０の出力電圧が大きく低下する。   For this reason, if a short circuit failure occurs due to destruction, characteristic deterioration, or the like in any of the reverse voltage application circuits 6u, 6v, 6w, the low voltage power supply circuit 50 is in spite of the on / off duty increase control of the oscillation control unit 61. The output voltage is greatly reduced.

低電圧電源回路５０の保護部６３は、一次巻線５２ｂを介して当該低電圧電源回路５０の出力電圧を検出しており、その検出電圧が通常よりかなり低い所定値ＶＳ２以下に低下すると、直ちに、発振制御部６１の発振を停止して、当該低電圧電源回路５０の出力を停止する。この停止により、短絡故障した逆電圧印加回路からＭＯＳＦＥＴに電流が流れ続けるなどの不具合が解消される。ひいては、短絡故障した逆電圧印加回路中の回路素子の異常温度上昇を防ぐことができ、他の回路の破壊を回避できるなど、十分な安全を確保することができる。   The protection unit 63 of the low voltage power supply circuit 50 detects the output voltage of the low voltage power supply circuit 50 through the primary winding 52b, and immediately when the detected voltage drops below the predetermined value VS2 which is considerably lower than normal. Then, the oscillation of the oscillation control unit 61 is stopped, and the output of the low voltage power supply circuit 50 is stopped. This stop eliminates problems such as a current continuously flowing from the reverse voltage application circuit that has a short circuit failure to the MOSFET. As a result, it is possible to prevent an abnormal temperature rise of the circuit elements in the reverse voltage application circuit in which a short circuit failure has occurred, and to ensure sufficient safety, such as avoiding the destruction of other circuits.

また、低電圧電源回路５０の容量を小さく設定し、低電圧電源回路５０をＭＯＳＦＥＴの駆動電源と兼用しているため、万が一、保護部６３が動作しない場合でも、低電圧電源回路５０の出力電圧が大きく低下すれば、駆動回路３４によるＭＯＳＦＥＴの駆動を継続させることができなくなり、停止に至る。ＭＯＳＦＥＴがオンしなければ、逆電圧印加回路が短絡しても逆電圧印加回路から電流は流れないため、逆電圧印加回路部分が過熱したり、他の回路を破壊する等の悪影響を及ぼすことはない。   Further, since the capacity of the low voltage power supply circuit 50 is set small and the low voltage power supply circuit 50 is also used as a driving power supply for the MOSFET, the output voltage of the low voltage power supply circuit 50 should be avoided even if the protection unit 63 does not operate. If the voltage drops significantly, the driving of the MOSFET by the driving circuit 34 cannot be continued and the operation stops. If the MOSFET is not turned on, current does not flow from the reverse voltage application circuit even if the reverse voltage application circuit is short-circuited. Therefore, adverse effects such as overheating of the reverse voltage application circuit part or destruction of other circuits may occur. Absent.

さらに、制御部１０の動作用電源も低電圧電源回路５０の出力を用いている。このため、万が一、保護部６３が動作しない場合でも、低電圧電源回路５０の出力電圧が大きく低下すれば、制御部１０の動作が停止し、ＩＧＢＴ、ＭＯＳＦＥＴへのオン指令が出なくなり、停止に至り、逆電圧印加回路から流れる電流が停止する。要するに、逆電圧印加回路の電源である低電圧電源回路５０の容量を適切に設定し、ＭＯＳＦＥＴの動作電源または制御部１０の動作電源と兼用することで、保護部６３を設けなくとも逆電圧印加回路の短絡故障時にはインバータ装置１を停止させて逆電圧印加回路から電流が流れなくすることができる。   Furthermore, the operation power supply of the control unit 10 uses the output of the low voltage power supply circuit 50. For this reason, even if the protection unit 63 does not operate, if the output voltage of the low-voltage power supply circuit 50 is greatly reduced, the operation of the control unit 10 is stopped, and the on command to the IGBT and MOSFET is not issued, and the operation is stopped. Thus, the current flowing from the reverse voltage application circuit stops. In short, by setting the capacity of the low voltage power supply circuit 50, which is the power supply of the reverse voltage application circuit, appropriately, and also using the operation power supply of the MOSFET or the operation power supply of the control unit 10, the reverse voltage application can be performed without providing the protection unit 63. In the event of a short circuit fault in the circuit, the inverter device 1 can be stopped so that no current flows from the reverse voltage application circuit.

なお、上記実施形態では、保護部６３を低電圧電源回路５０内に設ける構成としたが、低電圧電源回路５０の外に保護部６３を設ける構成としてもよい。また、上記実施形態では、スイッチング素子としてＩＧＢＴとＭＯＳＦＥＴの両方を用いた例で説明したが、すべての素子をＭＯＳＦＥＴで構成してもよい。その他、この発明は、上記実施形態に限定されるものではなく、要旨を変えない範囲で種々変形実施可能である。   In the above embodiment, the protection unit 63 is provided in the low voltage power supply circuit 50. However, the protection unit 63 may be provided outside the low voltage power supply circuit 50. Moreover, although the said embodiment demonstrated by the example using both IGBT and MOSFET as a switching element, you may comprise all the elements by MOSFET. In addition, this invention is not limited to the said embodiment, A various deformation | transformation implementation is possible in the range which does not change a summary.

この発明の一実施形態の構成を示すブロック図。The block diagram which shows the structure of one Embodiment of this invention. 同実施形態における低電圧電源回路の具体的な構成を示すブロック図。The block diagram which shows the concrete structure of the low voltage power supply circuit in the embodiment. 同実施形態の作用を説明するための図。The figure for demonstrating the effect | action of the embodiment.

符号の説明Explanation of symbols

１…インバータ装置、２…スイッチング回路、３ｕ，３ｖ，３ｗ…ＩＧＢＴ（上流側のスイッチング素子）、４ｕ，４ｖ，４ｗ…ＭＯＳＦＥＴ（下流側のスイッチング素子）、６ｕ，６ｖ，６ｗ…逆電圧印加回路、Ｄｕ＋，Ｄｖ＋，Ｄｗ＋，Ｄｕ−，Ｄｖ−，Ｄｗ−…還流ダイオード、１０…制御部、４２…逆電圧印加用コンデンサ、４３…逆電圧印加用ＭＯＳＦＥＴ、５０…低電圧電源回路、５１…トランス、５４…ＦＥＴ、６１…発振制御部、６３…保護部   DESCRIPTION OF SYMBOLS 1 ... Inverter apparatus, 2 ... Switching circuit, 3u, 3v, 3w ... IGBT (upstream side switching element), 4u, 4v, 4w ... MOSFET (downstream side switching element), 6u, 6v, 6w ... Reverse voltage application circuit , Du +, Dv +, Dw +, Du−, Dv−, Dw−... Freewheeling diode, 10... Control unit, 42 .. reverse voltage applying capacitor, 43 .. reverse voltage applying MOSFET, 50. 54 ... FET, 61 ... oscillation control unit, 63 ... protection unit

Claims (3)

還流ダイオードを有するＭＯＳＦＥＴを少なくとも一方に用いた２つのスイッチング素子の直列回路を複数備え、これら直列回路の各スイッチング素子の相互接続点が負荷に接続されるスイッチング回路と、
前記各スイッチング素子のオン，オフ動作を制御する制御手段と、
前記ＭＯＳＦＥＴと同じ直列回路の他方のスイッチング素子のオンに先立ち、同ＭＯＳＦＥＴの還流ダイオードに逆電圧を印加する逆電圧印加回路と、
前記ＭＯＳＦＥＴの駆動用および前記逆電圧印加回路の動作用の低電圧を出力する低電圧電源回路と、
前記低電圧電源回路の出力電圧を検出し、検出した電圧が所定値以下の場合に、前記低電圧電源回路の出力を停止する保護手段と、
を備えていることを特徴とするインバータ装置。 A switching circuit in which a plurality of series circuits of two switching elements each using a MOSFET having a free-wheeling diode are used, and an interconnection point of each switching element of these series circuits is connected to a load;
Control means for controlling the on / off operation of each switching element;
Prior to turning on the other switching element of the same series circuit as the MOSFET, a reverse voltage application circuit for applying a reverse voltage to the free wheel diode of the MOSFET,
A low voltage power supply circuit that outputs a low voltage for driving the MOSFET and for operating the reverse voltage application circuit;
Protecting means for detecting the output voltage of the low-voltage power supply circuit and stopping the output of the low-voltage power supply circuit when the detected voltage is a predetermined value or less;
An inverter device comprising: 還流ダイオードを有するＭＯＳＦＥＴを少なくとも一方に用いた２つのスイッチング素子の直列回路を複数備え、これら直列回路の各スイッチング素子の相互接続点が負荷に接続されるスイッチング回路と、
前記各スイッチング素子のオン，オフ動作を制御する制御手段と、
前記ＭＯＳＦＥＴと同じ直列回路の他方のスイッチング素子のオンに先立ち、同ＭＯＳＦＥＴの還流ダイオードに逆電圧を印加する逆電圧印加回路と、
前記制御手段および前記逆電圧印加回路の動作用の低電圧を出力する低電圧電源回路と、
前記低電圧電源回路の出力電圧を検出し、検出した電圧が所定値以下の場合に、前記低電圧電源回路の出力を停止する保護手段と、
を備えていることを特徴とするインバータ装置。 A switching circuit in which a plurality of series circuits of two switching elements each using a MOSFET having a free-wheeling diode are used, and an interconnection point of each switching element of these series circuits is connected to a load;
Control means for controlling the on / off operation of each switching element;
Prior to turning on the other switching element of the same series circuit as the MOSFET, a reverse voltage application circuit for applying a reverse voltage to the free wheel diode of the MOSFET,
A low voltage power supply circuit that outputs a low voltage for operation of the control means and the reverse voltage application circuit;
Protecting means for detecting the output voltage of the low-voltage power supply circuit and stopping the output of the low-voltage power supply circuit when the detected voltage is a predetermined value or less;
An inverter device comprising: 請求項１または請求項２に記載のインバータ装置を圧縮機モータの電源として用いることを特徴とする冷凍サイクル装置。 A refrigerating cycle device using the inverter device according to claim 1 or 2 as a power source of a compressor motor.
JP2006027165A 2006-02-03 2006-02-03 Inverter, and refrigeration cycle device Pending JP2007209166A (en)

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