JP2007208041A - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/60—Reflective elements
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Abstract
【解決手段】半導体装置100は、基板101に発光素子102が実装されている。発光素子102は、上面に光の反射を防止する光反射防止膜130が形成されている。そのため、発光素子102の内部から外部に放射された光が発光素子102の上面(屈折率の境界面)を通過して進行する際に、屈折率の差によって光の全反射が起きることが防止される。また、発光素子102上には、光透過性を有するガラスよりなる平板状のカバー103が設置され、当該カバー103の上面にも光の反射を防止する光反射防止膜140が形成されている。そのため、発光素子102からの光がカバー103を透過して屈折率の大きいガラス製のカバー103から屈折率の小さい空気へ進行する過程で全反射することが防止される。
【選択図】図1
Description
Sinθf=n2/n1・・・(1)
この場合、全反射が生じるためには、物質Aの屈折率n1、物質Bの屈折率n2は、次式(2)の条件を満たしていることが必要になる。
n1>n2・・・(2)
従って、サファイア基板の屈折率(=1.8)に対して空気の屈折率(=1.0)が小さいので、発光素子102の内部から外部に放射された光は、境界面に対する入射角が上記臨界角θfより大きい角度である場合には、全反射となり、発光された光が入射角によって発光素子102の外部に進行することができなくなる。
101,201,301 基板
102,202,302 発光素子
103,203,303 カバー
104,204,304 蛍光体膜
105,205 リフレクタ
130,140,230,240,330,340 光反射防止膜
Claims (10)
- 基板に光機能素子が実装されてなる半導体装置であって、
前記光機能素子上には光透過性を有するカバーが設置され、
少なくとも前記カバーまたは前記光機能素子の何れかに光の反射を防止する光反射防止膜が形成されていることを特徴とする半導体装置。 - 前記カバーは、少なくともおもて面及び裏面の何れかに前記光反射防止膜が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記光反射防止膜は、誘電体膜を多層コーティングして形成された透明膜であることを特徴とする請求項1または2に記載の半導体装置。
- 前記光機能素子は、光を発光する発光素子であり、
前記発光素子の側面を囲むように光を反射するリフレクタが配置されていることを特徴とする請求項1乃至3の何れかに記載の半導体装置。 - 前記光機能素子は、前記基板の凹部に実装され、前記凹部が前記カバーと前記基板が接合されて封止されていることを特徴とする請求項4に記載の半導体装置。
- 基板上に光機能素子を実装する工程と、
前記基板上に設置された前記光機能素子を、光透過性を有するカバーを用いて封止する工程と、
少なくとも前記カバーまたは前記光機能素子の何れかに光反射防止膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記光反射防止膜は、誘電体膜を多層コーティングして形成された透明膜であることを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記基板は、前記光機能素子を実装する凹部が形成され、
前記凹部の開口は、前記カバーを用いて封止されていることを特徴とする請求項6に記載の半導体装置の製造方法。 - 前記光機能素子は、光を発光する発光素子であり、
前記発光素子の側面を囲むように光を反射するリフレクタを配置する工程を有することを特徴とする請求項6に記載の半導体装置の製造方法。 - 前記リフレクタの上端を前記カバーに接合する工程と、
前記リフレクタの下端を前記光機能素子が載置された領域の周囲に接合して前記光機能素子が実装された空間を封止する工程と、
を有することを特徴とする請求項9に記載の半導体装置の製造方法。
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JP2006025649A JP4996101B2 (ja) | 2006-02-02 | 2006-02-02 | 半導体装置及び半導体装置の製造方法 |
EP07002224A EP1816687A2 (en) | 2006-02-02 | 2007-02-01 | Semiconductor device and method of manufacturing semiconductor device |
US11/700,761 US7825423B2 (en) | 2006-02-02 | 2007-02-01 | Semiconductor device and method of manufacturing semiconductor device |
TW096103824A TW200805707A (en) | 2006-02-02 | 2007-02-02 | Semiconductor device and method of manufacturing semiconductor device |
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JP2006025649A JP4996101B2 (ja) | 2006-02-02 | 2006-02-02 | 半導体装置及び半導体装置の製造方法 |
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EP2058872A2 (en) | 2007-11-06 | 2009-05-13 | Shinko Electric Industries Co., Ltd. | Semiconductor package |
JP2009111082A (ja) * | 2007-10-29 | 2009-05-21 | Shinko Electric Ind Co Ltd | パッケージ用シリコン基板 |
JP2010539715A (ja) * | 2007-09-21 | 2010-12-16 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射放出コンポーネント |
KR20120013548A (ko) * | 2010-08-05 | 2012-02-15 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
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JP2014027208A (ja) * | 2012-07-30 | 2014-02-06 | Nichia Chem Ind Ltd | 発光装置とその製造方法 |
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JP2021511040A (ja) * | 2018-01-29 | 2021-05-06 | フィリップ・モーリス・プロダクツ・ソシエテ・アノニム | エアロゾル発生システム用照明ユニット |
US11758948B2 (en) | 2018-01-29 | 2023-09-19 | Altria Client Services Llc | Lighting unit for aerosol-generating systems |
JP7376484B2 (ja) | 2018-01-29 | 2023-11-08 | フィリップ・モーリス・プロダクツ・ソシエテ・アノニム | エアロゾル発生システム用照明ユニット |
WO2023042461A1 (ja) * | 2021-09-14 | 2023-03-23 | ソニーグループ株式会社 | 半導体発光デバイス |
Also Published As
Publication number | Publication date |
---|---|
US20070194712A1 (en) | 2007-08-23 |
US7825423B2 (en) | 2010-11-02 |
TW200805707A (en) | 2008-01-16 |
JP4996101B2 (ja) | 2012-08-08 |
EP1816687A2 (en) | 2007-08-08 |
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