JP2007197627A - 光半導体封止用透明エポキシ樹脂組成物及びそれを用いた光半導体集積回路装置 - Google Patents
光半導体封止用透明エポキシ樹脂組成物及びそれを用いた光半導体集積回路装置 Download PDFInfo
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- JP2007197627A JP2007197627A JP2006020431A JP2006020431A JP2007197627A JP 2007197627 A JP2007197627 A JP 2007197627A JP 2006020431 A JP2006020431 A JP 2006020431A JP 2006020431 A JP2006020431 A JP 2006020431A JP 2007197627 A JP2007197627 A JP 2007197627A
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- optical semiconductor
- epoxy resin
- integrated circuit
- resin composition
- lead frame
- Prior art date
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Images
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
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- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4215—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof cycloaliphatic
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/1815—Shape
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract
Description
(B)硬化剤
(C)チオール
(D)下記の化1で表される構造のアミン系硬化触媒
(B)硬化剤
(C)チオール
(D)下記化2で表される構造のアミン系硬化触媒
11 出力端子
12 金属細線
20 エポキシ樹脂組成物
100 リードフレーム
101 メッキ層
110 ダイパッド
111 外部出力端子
Claims (8)
- 前記(C)のチオールが(CnH2n+1S)n-H n=9-15であることを特徴とする請求項1に記載の光半導体封止用透明エポキシ樹脂組成物。
- 前記(D)のアミン系硬化触媒がN,N−ジメチルベンジルアミンであることを特徴とする請求項1に記載の光半導体封止用透明エポキシ樹脂組成物。
- 前記エポキシ樹脂のガラス点移転が90〜120℃であることを特徴とする請求項1に記載の光半導体封止用透明エポキシ樹脂組成物。
- 前記請求項1〜4項のいずれかに記載の光半導体封止用透明エポキシ樹脂組成物とリードフレームとを用いた前記光半導体集積回路装置において、
使用する温度領域における前記エポキシ樹脂組成物の線膨張係数と前記リードフレームの線膨張係数の比が15倍以下であり、かつ前記エポキシ樹脂組成物の線膨張係数が前記リードフレームの線膨張係数よりも大きい素材を用いたことを特徴とする光半導体集積回路装置。 - 前記リードフレームは、その表面の少なくとも一部をAg、Pd、Auのいずれかの被覆材で被覆したことを特徴とする請求項5に記載の光半導体集積回路装置。
- 前記光半導体集積回路素子を接続する部位と前記リードフレームの先端に設けられた外部出力用端子の部位とが物理的に分離されており、前記光半導体集積回路素子と前記外部出力用端子とが前記金属細線で接続されていることを特徴とする請求項5に記載の光半導体集積回路装置。
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JP2006020431A JP4890872B2 (ja) | 2006-01-30 | 2006-01-30 | 光半導体封止用透明エポキシ樹脂組成物及びそれを用いた光半導体集積回路装置 |
TW096103305A TWI355393B (en) | 2006-01-30 | 2007-01-30 | Transparent epoxy resin composition for molding op |
CN2007100047915A CN101012330B (zh) | 2006-01-30 | 2007-01-30 | 光学半导体封止用透明环氧树脂组合物和使用该组合物的光学半导体集成电路器件 |
US11/668,974 US7880279B2 (en) | 2006-01-30 | 2007-01-30 | Transparent epoxy resin composition for molding optical semiconductor and optical semiconductor integrated circuit device using the same |
KR1020070009620A KR100858967B1 (ko) | 2006-01-30 | 2007-01-30 | 광반도체를 성형하기 위한 투명 에폭시 수지 조성물과 이것을 사용한 광반도체 집적회로장치 |
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JP (1) | JP4890872B2 (ja) |
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CN (1) | CN101012330B (ja) |
TW (1) | TWI355393B (ja) |
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KR100999746B1 (ko) | 2009-02-17 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 디바이스 패키지 및 그 제조방법 |
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JP4890872B2 (ja) | 2012-03-07 |
TW200738816A (en) | 2007-10-16 |
CN101012330A (zh) | 2007-08-08 |
CN101012330B (zh) | 2011-07-27 |
KR20070078822A (ko) | 2007-08-02 |
KR100858967B1 (ko) | 2008-09-17 |
TWI355393B (en) | 2012-01-01 |
US20070181902A1 (en) | 2007-08-09 |
US7880279B2 (en) | 2011-02-01 |
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