JP2007180885A - Piezoelectric device - Google Patents

Piezoelectric device Download PDF

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JP2007180885A
JP2007180885A JP2005376771A JP2005376771A JP2007180885A JP 2007180885 A JP2007180885 A JP 2007180885A JP 2005376771 A JP2005376771 A JP 2005376771A JP 2005376771 A JP2005376771 A JP 2005376771A JP 2007180885 A JP2007180885 A JP 2007180885A
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integrated circuit
circuit element
piezoelectric
lid
piezoelectric device
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Manabu Matsumoto
学 松本
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a piezoelectric device which is easily manufactured, can be reduced in height, and prevents deterioration in oscillation characteristics caused by wiring resistance. <P>SOLUTION: The device is provided with a piezoelectric resonation element 30; columnar conductive members 20 used as external terminals; an integrated circuit element 10 formed by providing a mounting pad 13 for mounting the piezoelectric resonator 30, and an electrode pad 11 for mounting the conductive member 20 on the same surface; and a lid 40 having a concave portion 41 for covering the piezoelectric resonation element 30. The lid 40 is positioned nearer to the integrated circuit element 10 side than to the end 21 of the conductive member 20. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、本発明は、電子機器に用いられる圧電デバイスに関する。   The present invention relates to a piezoelectric device used in an electronic apparatus.

従来より、圧電素板の両主面に電極を形成した圧電振動素子をパッケージ内部に搭載した圧電振動子、このような圧電振動子と発振回路とを同一のパッケージ内に搭載した圧電発振器、特定の周波数帯を分離する圧電フィルタ等の圧電デバイスが、携帯用通信機器や電子計算機等の電子機器に多く用いられている。そして近年、表面実装に対応した形状の圧電デバイスが開発され、電子機器の小型化に伴って、これらの圧電デバイスも小型化が進められている。   Conventionally, a piezoelectric vibrator in which a piezoelectric vibration element having electrodes formed on both main surfaces of a piezoelectric element plate is mounted inside the package, a piezoelectric oscillator in which such a piezoelectric vibrator and an oscillation circuit are mounted in the same package, Piezoelectric devices such as a piezoelectric filter that separates these frequency bands are often used in electronic devices such as portable communication devices and electronic computers. In recent years, piezoelectric devices having a shape corresponding to surface mounting have been developed, and with the miniaturization of electronic equipment, these piezoelectric devices are also being miniaturized.

かかる従来の圧電デバイスの一例として水晶発振器を示す。この水晶発振器は、一対の励振電極を表裏主面に有した水晶振動素子と、この水晶振動素子の発振周波数に基づいて発振信号を出力する集積回路素子と、2つの枠部の間に基部を挟んで2つの凹部を形成している容器体と、金属製の蓋体とから構成されている。   A crystal oscillator is shown as an example of such a conventional piezoelectric device. The crystal oscillator includes a crystal resonator element having a pair of excitation electrodes on the front and back main surfaces, an integrated circuit element that outputs an oscillation signal based on the oscillation frequency of the crystal resonator element, and a base portion between two frame portions. It is comprised from the container body which forms two recessed parts on both sides, and a metal cover body.

ここで、容器体が有する2つの凹部のうち、一方の凹部には水晶振動素子を搭載するための搭載パッドが設けられており、この搭載パッドに導電性接着材を介して水晶振動素子が搭載されて電気的に接続されている。また、他方の凹部には集積回路素子が収容されている。水晶振動素子を囲繞する容器体の側壁頂部にはシールリングが取着されており、水晶振動素子が搭載されている凹部に蓋体を被せてシーム溶接等によりシールリングと蓋体とを接合することで気密封止する。(例えば、特許文献1参照。)。
このような水晶発振器は、容器体の下面、つまり、集積回路素子が収容される凹部を形成する枠部のマザーボードと向かい合う面に電源電圧端子、グランド端子、発振出力端子、発振制御端子として機能する外部端子が設けられ、この外部端子から所定周波数の基準信号が発振・出力される。このような基準信号は携帯用通信機器等の電子機器におけるクロック信号として利用されることとなる。
特開2000−77943号公報(段落0031〜0084、図1)
Here, a mounting pad for mounting a crystal resonator element is provided in one of the two recesses of the container body, and the crystal resonator element is mounted on the mounting pad via a conductive adhesive. Have been electrically connected. An integrated circuit element is accommodated in the other recess. A seal ring is attached to the top of the side wall of the container body that surrounds the crystal vibration element, and the cover body is covered with a recess in which the crystal vibration element is mounted, and the seal ring and the cover body are joined by seam welding or the like. It is hermetically sealed. (For example, refer to Patent Document 1).
Such a crystal oscillator functions as a power supply voltage terminal, a ground terminal, an oscillation output terminal, and an oscillation control terminal on the lower surface of the container body, that is, the surface facing the mother board of the frame portion that forms the recess for accommodating the integrated circuit element. An external terminal is provided, and a reference signal having a predetermined frequency is oscillated and output from the external terminal. Such a reference signal is used as a clock signal in an electronic device such as a portable communication device.
JP 2000-77943 A (paragraphs 0031 to 0084, FIG. 1)

しかしながら、従来の圧電デバイスによれば、容器体に圧電振動素子、集積回路素子等の配線を引き回さなくてはならないが、この配線抵抗が発振特性に影響を与えていた。
また、従来の圧電デバイスによれば、圧電振動子と集積回路素子とを搭載する容器体の厚みと蓋体の厚みがかさみ、低背化が難しくなってきている。
また、圧電デバイスの低背化に伴い、気密封止の確実性が損なわれる恐れがある。
さらに、従来の圧電デバイスは、容器体に圧電振動素子、集積回路素子等の配線を引き回さなくてはならないため、製造に手間やコストがかかっていた。
However, according to the conventional piezoelectric device, the wiring such as the piezoelectric vibration element and the integrated circuit element has to be routed around the container body, but this wiring resistance affects the oscillation characteristics.
Further, according to the conventional piezoelectric device, the thickness of the container body and the thickness of the lid body on which the piezoelectric vibrator and the integrated circuit element are mounted are increased, and it is difficult to reduce the height.
In addition, the reliability of hermetic sealing may be impaired with the reduction in the height of the piezoelectric device.
Furthermore, the conventional piezoelectric device requires labor and cost to manufacture because wiring such as a piezoelectric vibration element and an integrated circuit element has to be routed around the container body.

そこで、本発明では、前記した問題を解決し、製造が容易で、低背化が可能であると共に配線抵抗による発振特性の低下を防ぐ圧電デバイスを提供することを課題とする。   Therefore, an object of the present invention is to provide a piezoelectric device that solves the above-described problems, is easy to manufacture, can be reduced in height, and prevents deterioration of oscillation characteristics due to wiring resistance.

前記課題を解決するため、本発明は、圧電振動素子と、外部端子となる柱状又は球状の導電性部材と、同一面に前記圧電振動素子を搭載する為の搭載パッドと前記導電性部材を搭載する為の電極パッドとを設けてなる集積回路素子と、該圧電振動素子を被覆する凹部を有する蓋体と、を備え、前記蓋体が前記導電性部材の端部より前記集積回路素子側に位置することを特徴とする圧電デバイスである。   In order to solve the above problems, the present invention mounts a piezoelectric vibration element, a columnar or spherical conductive member serving as an external terminal, a mounting pad for mounting the piezoelectric vibration element on the same surface, and the conductive member. An integrated circuit element provided with an electrode pad for performing the operation, and a lid body having a recess that covers the piezoelectric vibration element, and the lid body is closer to the integrated circuit element side than an end of the conductive member. The piezoelectric device is characterized by being positioned.

また、本発明は、該蓋体を被覆する絶縁性樹脂層が設けられていても良い。   In the present invention, an insulating resin layer that covers the lid may be provided.

本発明の圧電デバイスによれば、圧電振動素子を発振用集積回路素子に直接実装するので、圧電振動素子の励振電極が発振用集積回路素子の搭載パッドに直接接続されるようになるため、発振用集積用回路素子を容器体に実装する場合に比し、圧電振動素子と発振用集積用回路素子の電子回路とを接続する配線の長さが短縮されて配線抵抗に起因した容量の発生を有効に防止することができ、良好な発振特性が得られるようになる。   According to the piezoelectric device of the present invention, since the piezoelectric vibration element is directly mounted on the oscillation integrated circuit element, the excitation electrode of the piezoelectric vibration element is directly connected to the mounting pad of the oscillation integrated circuit element. Compared to the case where the integrated circuit element for mounting is mounted on the container body, the length of the wiring connecting the piezoelectric vibration element and the electronic circuit of the oscillating integrated circuit element is shortened, and the generation of capacitance due to the wiring resistance is reduced. This can be effectively prevented and good oscillation characteristics can be obtained.

また、圧電振動素子を集積回路素子に直接接続し、この圧電振動素子を凹部が設けられた蓋体で覆い、導電性部材を外部端子として前記集積回路素子に設けたので、容器体が不要となり、電子デバイスの低背化が可能となる。   In addition, since the piezoelectric vibration element is directly connected to the integrated circuit element, the piezoelectric vibration element is covered with a lid provided with a recess, and the conductive member is provided as an external terminal in the integrated circuit element, the container body is not required. Therefore, it is possible to reduce the height of the electronic device.

また、本発明の圧電デバイスによれば、該蓋体を被覆するように絶縁性樹脂層が設けられていることによって、圧電振動素子の気密性を高めることができる。   Further, according to the piezoelectric device of the present invention, since the insulating resin layer is provided so as to cover the lid, the airtightness of the piezoelectric vibration element can be improved.

次に、本発明を実施するための最良の形態(以下、「実施形態」という。)について、適宜図面を参照しながら詳細に説明する。図1は、実施形態に係る絶縁性樹脂を除く圧電デバイスの主構成の一例を示す分解斜視図である。図2は、図1の圧電デバイスに樹脂を用いた場合の一例を示す斜視図である。図3は、図2のA−A断面図である。
なお、圧電デバイスを表面実装型の水晶発振器として説明する。また、集積回路素子を発振用の集積回路素子とし、圧電振動素子を水晶振動素子として説明する。
Next, the best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. FIG. 1 is an exploded perspective view illustrating an example of a main configuration of a piezoelectric device excluding an insulating resin according to an embodiment. FIG. 2 is a perspective view showing an example in which a resin is used in the piezoelectric device of FIG. FIG. 3 is a cross-sectional view taken along the line AA of FIG.
The piezoelectric device will be described as a surface-mounted crystal oscillator. In the following description, the integrated circuit element is an integrated circuit element for oscillation, and the piezoelectric vibration element is a crystal vibration element.

図1に示すように、本発明の実施形態に係る圧電デバイス(水晶発振器)100は、集積回路素子10、導電性部材20、水晶振動素子30、蓋体40、絶縁性樹脂50で主に構成されている。   As shown in FIG. 1, a piezoelectric device (crystal oscillator) 100 according to an embodiment of the present invention is mainly composed of an integrated circuit element 10, a conductive member 20, a crystal resonator element 30, a lid body 40, and an insulating resin 50. Has been.

集積回路素子10は、図1に示すように、電子回路と電気的に接続された複数個(本実施形態では4個)の電極パッド11と、これら電極パッド11の内側に設けられる環状の封止用導体パターン12と、この封止用導体パターン12の内側に設けられる水晶振動素子用の搭載パッド13とを有したフリップチップ型となっている。ここで、封止用導体パターン12の形状は、後述する蓋体40の縁部42の形状に対応した形状となっている。また、前記封止用導体パターン12は、後述する蓋体40を封止材(図示せず)を介して、集積回路素子10の上面に接合させるためのものであり、かかる前記封止用導体パターン12を、上述したように、W(タングステン)もしくはMo(モリブデン)から成る基層の表面にNi(ニッケル)層及びAu(金)層を順次被着させた構成となしておく。   As shown in FIG. 1, the integrated circuit element 10 includes a plurality (four in this embodiment) of electrode pads 11 electrically connected to an electronic circuit, and an annular seal provided inside these electrode pads 11. The flip-chip type has a stop conductor pattern 12 and a mounting pad 13 for a crystal resonator element provided inside the sealing conductor pattern 12. Here, the shape of the sealing conductor pattern 12 is a shape corresponding to the shape of the edge portion 42 of the lid 40 described later. The sealing conductor pattern 12 is for bonding a lid body 40 to be described later to the upper surface of the integrated circuit element 10 via a sealing material (not shown), and the sealing conductor As described above, the pattern 12 has a structure in which a Ni (nickel) layer and an Au (gold) layer are sequentially deposited on the surface of a base layer made of W (tungsten) or Mo (molybdenum).

なお、封止材は、蓋体40を集積回路素子10に対して接合するためのろう材層として機能するものであり、金錫(Au−Sn)の組成比率は、例えば、金80%、錫20%であり、その厚みは、例えば、10μm〜30μmである。   The sealing material functions as a brazing material layer for joining the lid 40 to the integrated circuit element 10, and the composition ratio of gold tin (Au—Sn) is, for example, 80% gold, Tin is 20%, and the thickness is, for example, 10 μm to 30 μm.

この集積回路素子10は、単結晶シリコン等から成る基体の下面に、周囲の温度状態を検知する感温素子(サーミスタ)、水晶振動素子30の温度特性を補償する温度補償データを格納するとともに該温度補償データに基づいて水晶振動素子30の振動特性を温度変化に応じて補正する温度補償回路、該温度補償回路に接続されて所定の発振出力を生成する発振回路等の電子回路が設けられている。このような発振回路で生成された発振出力は、外部に出力された後、例えば、クロック信号等の基準信号として利用されることとなる。   The integrated circuit element 10 stores temperature compensation data for compensating the temperature characteristics of the temperature sensing element (thermistor) and the quartz crystal vibration element 30 for detecting the ambient temperature state on the lower surface of the substrate made of single crystal silicon or the like. An electronic circuit such as a temperature compensation circuit that corrects the vibration characteristics of the crystal resonator element 30 according to a temperature change based on the temperature compensation data and an oscillation circuit that is connected to the temperature compensation circuit and generates a predetermined oscillation output is provided. Yes. The oscillation output generated by such an oscillation circuit is used as a reference signal such as a clock signal after being output to the outside.

また、集積回路素子10は、例えば、単結晶シリコンのインゴットを所定厚みにスライスして得られたシリコンウエハの一主面に従来周知の半導体製造技術によって、発振回路等の電子回路や電極パッド11、封止用導体パターン12、圧電振動素子搭載用の搭載パッド13等を形成することによって製作されたものでも良い。   Further, the integrated circuit element 10 includes, for example, an electronic circuit such as an oscillation circuit or an electrode pad 11 formed on one main surface of a silicon wafer obtained by slicing an ingot of single crystal silicon to a predetermined thickness by a well-known semiconductor manufacturing technique. Alternatively, it may be manufactured by forming a sealing conductor pattern 12, a mounting pad 13 for mounting a piezoelectric vibration element, and the like.

導電性部材20,20・・・は、図1及び図2に示すように、外部端子(電源電圧端子、グランド端子、発振出力端子、発振制御端子)としての役割を果たし、集積回路素子10の電極パッド11に接続される。これらの外部端子となる導電性部材20は、圧電デバイス100をマザーボードM(図3参照)等の外部電気回路に搭載する際、半田付け等によって外部電気回路の回路配線と電気的に接続されることとなる。   1 and 2, the conductive members 20, 20... Serve as external terminals (power supply voltage terminal, ground terminal, oscillation output terminal, oscillation control terminal). Connected to the electrode pad 11. When the piezoelectric device 100 is mounted on an external electric circuit such as the mother board M (see FIG. 3), the conductive member 20 serving as these external terminals is electrically connected to the circuit wiring of the external electric circuit by soldering or the like. It will be.

この導電性部材20は柱状となっており、集積回路素子10に接続されたときに、当該集積回路素子と接続していない側の端部21が蓋体40よりも高い位置となる。
したがって、当該端部21をマザーボードM(図3参照)と接続することで圧電デバイス100をマザーボードM(図3参照)に実装した場合に、蓋体40がそのマザーボードM(図3参照)に接触するのを防ぐことができる。
The conductive member 20 has a columnar shape, and when connected to the integrated circuit element 10, the end 21 on the side not connected to the integrated circuit element is positioned higher than the lid 40.
Therefore, when the piezoelectric device 100 is mounted on the mother board M (see FIG. 3) by connecting the end 21 to the mother board M (see FIG. 3), the lid 40 contacts the mother board M (see FIG. 3). Can be prevented.

また、集積回路素子10に設けられる電極パッド11が、この集積回路素子10の四隅に設けられる場合、導電性部材20は、集積回路素子10の四隅に設けられることとなる。したがって、後述する水晶振動素子30を集積回路素子10に搭載する場合、隣り合う導電性部材20,20の間に搭載しても良い。これにより、水晶振動素子30の搭載位置が従来のように容器に設けられる凹部41内に制限されることがなくなるので、水晶振動素子30の性能に対する設計の自由度が向上する。   When the electrode pads 11 provided on the integrated circuit element 10 are provided at the four corners of the integrated circuit element 10, the conductive member 20 is provided at the four corners of the integrated circuit element 10. Therefore, when the crystal resonator element 30 described later is mounted on the integrated circuit element 10, it may be mounted between the adjacent conductive members 20 and 20. As a result, the mounting position of the crystal resonator element 30 is not limited to the recessed portion 41 provided in the container as in the prior art, and the degree of freedom in design with respect to the performance of the crystal resonator element 30 is improved.

水晶振動素子30は、所定の結晶軸でカットした水晶片の両主面に一対の励振電極を被着・形成してなり、外部からの変動電圧が一対の励振電極を介して水晶片に印加されると、所定の周波数で厚みすべり振動を起こすようになっている。
この水晶振動素子30は、図1に示すように、集積回路素子10に設けられている搭載パッド13に搭載される。具体的には、水晶振動素子30の励振電極に導電性接着材14を介して搭載パッド13に電気的に接続される。
The crystal resonator element 30 is formed by attaching and forming a pair of excitation electrodes on both main surfaces of a crystal piece cut along a predetermined crystal axis, and an external fluctuation voltage is applied to the crystal piece via the pair of excitation electrodes. Then, the thickness shear vibration is caused at a predetermined frequency.
As shown in FIG. 1, the crystal resonator element 30 is mounted on a mounting pad 13 provided in the integrated circuit element 10. Specifically, the excitation electrode of the crystal resonator element 30 is electrically connected to the mounting pad 13 via the conductive adhesive 14.

これにより、水晶振動素子30の励振電極間に外部からの変動電圧を印加して水晶振動素子30の特性に応じた所定の周波数で厚みすべり振動を起こさせることによって、かかる水晶振動素子30の共振周波数に基づいて、集積回路素子10で所定周波数の基準信号が発振・出力される。
なお、導電性接着材14は、シリコン樹脂やポリイミド樹脂等から成る樹脂材料中にAg等から成る導電性粒子を所定量、添加・混合してなるものである。
Accordingly, by applying a variable voltage from the outside between the excitation electrodes of the crystal resonator element 30 to cause thickness shear vibration at a predetermined frequency according to the characteristics of the crystal resonator element 30, the resonance of the crystal resonator element 30 is achieved. Based on the frequency, the integrated circuit element 10 oscillates and outputs a reference signal having a predetermined frequency.
The conductive adhesive 14 is obtained by adding and mixing a predetermined amount of conductive particles made of Ag or the like into a resin material made of silicon resin or polyimide resin.

蓋体40は、図1及び図2に示すように、集積回路素子10に搭載された水晶振動素子30を気密封止する役割を果たし、封止材を介して封止用導体パターン12に取着される。この蓋体40は、集積回路素子10の電極パッド11に接続されている導電性部材20に設けられたグランド端子に電気的に接続される。これによって、圧電デバイス100を試用した場合に、蓋体40はグランド電位に保持されることとなり、水晶振動素子30が蓋体40のシールド効果によって外部からの不要な電気的作用、例えばノイズ等から良好に保護される。   As shown in FIGS. 1 and 2, the lid body 40 serves to hermetically seal the crystal resonator element 30 mounted on the integrated circuit element 10, and is attached to the sealing conductor pattern 12 via a sealing material. Worn. The lid 40 is electrically connected to a ground terminal provided on the conductive member 20 connected to the electrode pad 11 of the integrated circuit element 10. As a result, when the piezoelectric device 100 is tried, the lid 40 is held at the ground potential, and the quartz resonator element 30 is prevented from unnecessary electrical action from the outside, such as noise, by the shielding effect of the lid 40. Good protection.

また、蓋体40は、例えば、42アロイやコバール,リン青銅等の金属から成る、厚み60μm〜100μmの金属板を従来周知の板金加工(例えば絞り加工)により凹部41と縁部42とが形成される。これにより、水晶振動素子30を覆いつつ集積回路素子10に容易に配置することができる。   Further, the lid body 40 is formed with a concave portion 41 and an edge portion 42 by a conventionally well-known sheet metal processing (for example, drawing processing) of a metal plate made of a metal such as 42 alloy, Kovar, phosphor bronze, or the like and having a thickness of 60 μm to 100 μm. Is done. Thereby, it can be easily arranged on the integrated circuit element 10 while covering the crystal resonator element 30.

絶縁性樹脂50は、図2及び図3に示すように、エポキシ樹脂等であり、流動性が低いものが望ましい。
この絶縁性樹脂50は、集積回路素子10に取着された蓋体40の外周面を覆って更に気密を保つ役割を果たす。これにより、気密封止性を更に向上させることが可能となる。
As shown in FIGS. 2 and 3, the insulating resin 50 is an epoxy resin or the like, and preferably has low fluidity.
The insulating resin 50 plays a role of covering the outer peripheral surface of the lid 40 attached to the integrated circuit element 10 and further maintaining airtightness. Thereby, it becomes possible to further improve the hermetic sealing performance.

このように、本発明の実施形態に係る圧電デバイス100は、集積回路素子10に水晶振動素子30を搭載しつつ、この水晶振動素子30を搭載している面と同一面に導電性部材20を接続し、さらに、水晶振動素子30を覆う蓋体40を導電性部材20の端部21よりも集積回路素子10側に位置させたので、配線距離が短くなり、従来に比べて配線抵抗が少なく、発振特性を良好にしつつ、低背化を可能にすることができる。
また、蓋体40の外周を絶縁性樹脂50で覆ったので、蓋体40と絶縁性樹脂50とで二重の気密封止となるので、気密性が向上することとなる。
As described above, the piezoelectric device 100 according to the embodiment of the present invention mounts the crystal vibration element 30 on the integrated circuit element 10 and the conductive member 20 on the same surface as the surface on which the crystal vibration element 30 is mounted. In addition, since the lid body 40 that covers the crystal resonator element 30 is positioned closer to the integrated circuit element 10 than the end portion 21 of the conductive member 20, the wiring distance is shortened and the wiring resistance is less than that of the prior art. It is possible to reduce the height while improving the oscillation characteristics.
Moreover, since the outer periphery of the lid body 40 is covered with the insulating resin 50, the lid body 40 and the insulating resin 50 provide a double hermetic seal, so that the airtightness is improved.

次に本発明の実施形態に係る圧電発振器100の製造方法について説明する。
図4(a)はマトリクスに配列されてウエハ状となる圧電デバイスの一例を示す図であり、図4(b)は(a)に続く工程を示す図である。
Next, a method for manufacturing the piezoelectric oscillator 100 according to the embodiment of the present invention will be described.
FIG. 4A is a diagram illustrating an example of a piezoelectric device that is arranged in a matrix and has a wafer shape, and FIG. 4B is a diagram illustrating a process subsequent to (a).

(工程A)
まず、マトリクスに配列されてウエハ状となっている集積回路素子10に一対の搭載パッド13と封止用導体パターン12を被着・形成し、封止用導体パターン12の外側であって集積回路素子10の四隅に電源電圧端子、グランド端子、発振出力端子、発振制御端子等の外部端子となる電極パターン11を被着・形成する。
(Process A)
First, a pair of mounting pads 13 and a sealing conductor pattern 12 are deposited and formed on an integrated circuit element 10 arranged in a matrix and in the form of a wafer. Electrode patterns 11 serving as external terminals such as a power supply voltage terminal, a ground terminal, an oscillation output terminal, and an oscillation control terminal are deposited and formed at the four corners of the element 10.

(工程B)
そして、水晶振動素子30の一対の励振電極を、導電性接着剤14を介して集積回路素子10のこれら励振電極に対応する搭載パッド13に接続することで、各集積回路素子10に水晶振動素子30を1個ずつ搭載する。これにより、水晶振動素子30は集積回路素子10と電気的・機械的に接続される。
(Process B)
Then, by connecting the pair of excitation electrodes of the crystal oscillation element 30 to the mounting pads 13 corresponding to these excitation electrodes of the integrated circuit element 10 via the conductive adhesive 14, each crystal oscillation element is connected to each integrated circuit element 10. 30 is mounted one by one. Thereby, the crystal resonator element 30 is electrically and mechanically connected to the integrated circuit element 10.

(工程C)
次に、各集積回路素子10に搭載した水晶振動素子30を覆うように蓋体40の凹部41内に該水晶振動素子30を収容し、蓋体40の縁部42と集積回路素子10の封止用導体パターン12とを接合して気密封止する。
このように、水晶振動素子30を集積回路素子10に実装させておけば、水晶振動素子30の励振電極が発振用集積回路素子10の搭載パッド13に直接接続されることとなるため、水晶振動素子30と集積回路素子10の電子回路とを接続する配線の長さは著しく短縮され、配線抵抗に起因した容量の発生を有効に防止することができる。これにより、従来より良好な発振特性が得られる。
(Process C)
Next, the crystal resonator element 30 is accommodated in the concave portion 41 of the lid body 40 so as to cover the crystal resonator element 30 mounted on each integrated circuit element 10, and the edge portion 42 of the lid body 40 and the integrated circuit element 10 are sealed. The stop conductor pattern 12 is joined and hermetically sealed.
Thus, if the crystal resonator element 30 is mounted on the integrated circuit element 10, the excitation electrode of the crystal oscillator element 30 is directly connected to the mounting pad 13 of the oscillation integrated circuit element 10. The length of the wiring connecting the element 30 and the electronic circuit of the integrated circuit element 10 is remarkably shortened, and the generation of capacitance due to the wiring resistance can be effectively prevented. As a result, a better oscillation characteristic than before can be obtained.

また、このような蓋体40を、集積回路素子10に水晶振動素子30が配置され、封止用導体パターン12に金錫(Au−Sn)等からなる封止材(図示せず)を介して集積回路素子10に載置させ、しかる後、これを例えば、300℃〜350℃の温度に保たれた加熱炉の中に入れ、前記封止材を高温で加熱・溶融させることによって、蓋体40が集積回路素子10に接合される。その後、一体化された集積回路素子10と蓋体40とは徐々に室温まで冷却される。この他に、レーザー光やハロゲンランプ等を用いて、封止材を溶融することによって、蓋体40と集積回路素子10とを接合する方法もある。   In addition, such a lid 40 is formed by placing a quartz crystal vibration element 30 on the integrated circuit element 10 and a sealing material (not shown) made of gold tin (Au—Sn) or the like on the sealing conductor pattern 12. Then, it is placed on the integrated circuit element 10 and then put in a heating furnace maintained at a temperature of 300 ° C. to 350 ° C., for example. The body 40 is bonded to the integrated circuit element 10. Thereafter, the integrated integrated circuit element 10 and the lid 40 are gradually cooled to room temperature. In addition, there is a method of joining the lid 40 and the integrated circuit element 10 by melting the sealing material using a laser beam, a halogen lamp, or the like.

前記ハロゲンランプは、バルブ内にタングステンフィラメントを備え、ハロゲンガスを封入したものである。このタングステンフィラメントが通電加熱されると、ハロゲンガスと反応し、タングステン−ハロゲン化合物が生成される。タングステン−ハロゲン化合物は、バルブ内の対流により、タングステン−ハロゲン化合物がフィラメント付近に運ばれ、高温によりタングステンとハロゲンガスに分解されて、タングステンは、フィラメントに沈殿するというハロゲンサイクルを繰り返し、光ビームを発生するものである。   The halogen lamp includes a tungsten filament in a bulb and encapsulates a halogen gas. When this tungsten filament is energized and heated, it reacts with the halogen gas to produce a tungsten-halogen compound. The tungsten-halogen compound is transported to the vicinity of the filament by convection in the bulb, decomposed into tungsten and a halogen gas at a high temperature, and tungsten is precipitated in the filament. It is what happens.

(工程D)
次に、図4(a)に示すように、蓋体40の外周面を絶縁性樹脂50で覆う。これによって、気密封止性を更に向上させることが可能となる。この絶縁性樹脂50は、エポキシ樹脂等であり、流動性が低いものが望ましい。
(Process D)
Next, as shown in FIG. 4A, the outer peripheral surface of the lid body 40 is covered with an insulating resin 50. As a result, the hermetic sealing property can be further improved. The insulating resin 50 is an epoxy resin or the like and desirably has low fluidity.

(工程E)
そして最後に、図4(b)に示すように、マトリクスに配列されてウエハ状となる集積回路素子10の外周に沿って切断する。
切断は、ダイサーを用いたダイシング等によって行なわれる。この切断の工程を経てマトリクスに配列されてウエハ状となる集積回路素子10は、個々に分割される。これにより、複数個の圧電デバイス100が同時に得られる。
(Process E)
Finally, as shown in FIG. 4B, the wafer is cut along the outer periphery of the integrated circuit element 10 arranged in a matrix and having a wafer shape.
The cutting is performed by dicing using a dicer or the like. The integrated circuit elements 10 that are arranged in a matrix through the cutting process and have a wafer shape are individually divided. Thereby, the several piezoelectric device 100 is obtained simultaneously.

このような方法で本発明の実施形態に係る電子デバイスを製造すれば、気密性を向上させることができ、かつ、配線抵抗を少なくして従来より良い発振特性を得ることができる。また、製造が容易となるため、製造にかかる手間やコストを削減できる。   If the electronic device according to the embodiment of the present invention is manufactured by such a method, the airtightness can be improved, and the wiring resistance can be reduced to obtain better oscillation characteristics than before. Moreover, since manufacture becomes easy, the effort and cost concerning manufacture can be reduced.

(変形例)
次に、本発明の実施形態に係る圧電デバイスは、図5に示すように、変形例を含んでいる。図5は、本発明の実施形態に係る圧電デバイスの変形例の一例を示す部分断面図である。図5に示すように、導電性部材20Bの形状が球状となっている。このように構成しても本発明の前記実施形態と同様の効果を奏する。
(Modification)
Next, the piezoelectric device according to the embodiment of the present invention includes a modification as shown in FIG. FIG. 5 is a partial cross-sectional view showing an example of a modification of the piezoelectric device according to the embodiment of the present invention. As shown in FIG. 5, the conductive member 20B has a spherical shape. Even if comprised in this way, there exists an effect similar to the said embodiment of this invention.

以上、本発明の実施形態について説明したが、本発明は前記実施形態には限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更が可能である。
例えば、圧電振動素子として水晶振動素子を用いた表面実装型の圧電デバイスを例にとって説明したが、これに代えて、圧電振動素子として弾性表面波(SAW)フィルタ等の他の圧電振動素子を用いる場合にも本発明は適用可能である。
また、水晶振動素子30に代えて、コンデンサ等の電子部品を集積回路素子10に搭載してもよい。
As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, A various change is possible in the range which does not deviate from the summary of this invention.
For example, a surface-mount type piezoelectric device using a crystal vibration element as a piezoelectric vibration element has been described as an example. Instead, another piezoelectric vibration element such as a surface acoustic wave (SAW) filter is used as the piezoelectric vibration element. Even in this case, the present invention is applicable.
Further, instead of the crystal resonator element 30, an electronic component such as a capacitor may be mounted on the integrated circuit element 10.

また、絶縁性樹脂50は、蓋体40の外周面以外に、この蓋体40を含めて集積回路素子10の蓋体40を接続している面の全体に設けても良い。
また、絶縁性樹脂50を、端部を除く導電性部材20と蓋体40とを被覆するように設けても良い。このようにすることで、該導電性部材20を保護することができる。
In addition to the outer peripheral surface of the lid 40, the insulating resin 50 may be provided on the entire surface connecting the lid 40 of the integrated circuit element 10 including the lid 40.
Further, the insulating resin 50 may be provided so as to cover the conductive member 20 excluding the end portions and the lid body 40. By doing in this way, this electroconductive member 20 can be protected.

実施形態に係る絶縁性樹脂を除く圧電デバイスの主構成の一例を示す分解斜視図である。It is a disassembled perspective view which shows an example of the main structures of the piezoelectric device except the insulating resin which concerns on embodiment. 図1の圧電デバイスに樹脂を用いた場合の一例を示す斜視図である。It is a perspective view which shows an example at the time of using resin for the piezoelectric device of FIG. 図2のA−A断面図である。It is AA sectional drawing of FIG. (a)はマトリクスに配列されてウエハ状となる圧電デバイスの一例を示す図であり、(b)は(a)に続く工程を示す図である。(A) is a figure which shows an example of the piezoelectric device which is arranged in a matrix and becomes a wafer form, (b) is a figure which shows the process following (a). 本発明の実施形態に係る圧電デバイスの変形例の一例を示す部分断面図である。It is a fragmentary sectional view showing an example of a modification of a piezoelectric device concerning an embodiment of the present invention.

符号の説明Explanation of symbols

100 圧電デバイス
10 集積回路素子
11 電極パッド
12 封止用導体パターン
13 搭載パッド
20 導電性部材
21 端部
30 水晶振動素子
40 蓋体
41 凹部
42 縁部
50 絶縁性樹脂
DESCRIPTION OF SYMBOLS 100 Piezoelectric device 10 Integrated circuit element 11 Electrode pad 12 Conductive pattern 13 for sealing 13 Mounting pad 20 Conductive member 21 End part 30 Crystal vibration element 40 Cover body 41 Recessed part 42 Edge part 50 Insulating resin

Claims (2)

圧電振動素子と、
外部端子となる柱状又は球状の導電性部材と、
同一面に前記圧電振動素子を搭載する為の搭載パッドと前記導電性部材を搭載する為の電極パッドとを設けてなる集積回路素子と、
該圧電振動素子を被覆する凹部を有する蓋体と、を備え、
前記蓋体が前記導電性部材の端部より前記集積回路素子側に位置することを特徴とする圧電デバイス。
A piezoelectric vibration element;
A columnar or spherical conductive member serving as an external terminal;
An integrated circuit element comprising a mounting pad for mounting the piezoelectric vibration element and an electrode pad for mounting the conductive member on the same surface;
A lid having a recess covering the piezoelectric vibration element,
The piezoelectric device according to claim 1, wherein the lid is located closer to the integrated circuit element than the end of the conductive member.
該蓋体を被覆する絶縁性樹脂層が設けられていることを特徴とする請求項1記載の圧電デバイス。   The piezoelectric device according to claim 1, further comprising an insulating resin layer that covers the lid.
JP2005376771A 2005-12-28 2005-12-28 Piezoelectric device Pending JP2007180885A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009065334A (en) * 2007-09-05 2009-03-26 Nippon Dempa Kogyo Co Ltd Surface-mount crystal oscillator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128591A (en) * 2002-09-30 2004-04-22 Kinseki Ltd Piezoelectric oscillator
JP2004235719A (en) * 2003-01-28 2004-08-19 Toyo Commun Equip Co Ltd Piezoelectric oscillator and manufacturing method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128591A (en) * 2002-09-30 2004-04-22 Kinseki Ltd Piezoelectric oscillator
JP2004235719A (en) * 2003-01-28 2004-08-19 Toyo Commun Equip Co Ltd Piezoelectric oscillator and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009065334A (en) * 2007-09-05 2009-03-26 Nippon Dempa Kogyo Co Ltd Surface-mount crystal oscillator

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