JP2007169655A - Epoxy resin composition for sealing semiconductor and semiconductor device using the same - Google Patents
Epoxy resin composition for sealing semiconductor and semiconductor device using the same Download PDFInfo
- Publication number
- JP2007169655A JP2007169655A JP2007011702A JP2007011702A JP2007169655A JP 2007169655 A JP2007169655 A JP 2007169655A JP 2007011702 A JP2007011702 A JP 2007011702A JP 2007011702 A JP2007011702 A JP 2007011702A JP 2007169655 A JP2007169655 A JP 2007169655A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- average particle
- resin composition
- semiconductor
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 0 Cc1ccc(*)cc1 Chemical compound Cc1ccc(*)cc1 0.000 description 2
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Abstract
Description
本発明は、流動性および成形性を確保しつつ、反りの発生が抑制され、かつ半田耐熱性に優れた片面封止タイプの半導体装置の製造に用いられる半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置に関するものである。 The present invention relates to an epoxy resin composition for encapsulating a semiconductor, which is used for the production of a single-side encapsulated type semiconductor device in which the occurrence of warpage is suppressed and the heat resistance of the solder is excellent while ensuring fluidity and moldability. The present invention relates to a semiconductor device using the.
トランジスタ、ＩＣ、ＬＳＩ等の半導体素子は、通常、エポキシ樹脂組成物を用いてトランスファー成形により樹脂封止される。この種のパッケージとして、従来から各種形態のパッケージが開発されている。 Semiconductor elements such as transistors, ICs, and LSIs are usually resin-sealed by transfer molding using an epoxy resin composition. Conventionally, various types of packages have been developed as this type of package.
そして、近年の半導体装置分野における半導体素子の封止技術において、片面封止タイプのものが注目され実用化されている。エポキシ樹脂組成物硬化体で半導体素子が封止された半導体装置は量産性に優れ、かつ低コストのものであり、さらに上記片面封止タイプの半導体装置は半導体素子の高集積化による高性能化が可能なものである。また、フリップチップ方式、ダイレクトチップアタッチ方式における、半導体素子を絶縁基板であるボードに実装する方法では、通常、半導体素子を内包する状態で片面封止、あるいは絶縁基板と半導体素子の間の空隙に溶融した熱硬化性樹脂組成物を充填し硬化させて樹脂封止することが行われている。しかし、これらの半導体装置に関し、封止樹脂の硬化収縮、絶縁基板と封止樹脂の線膨張係数の不一致に起因してパッケージに反りが発生するという問題を有している。 In recent semiconductor device sealing techniques in the field of semiconductor devices, single-sided sealing types have attracted attention and have been put into practical use. A semiconductor device in which a semiconductor element is encapsulated with a cured epoxy resin composition is excellent in mass production and low in cost, and the single-side encapsulated semiconductor device has a higher performance due to higher integration of semiconductor elements. Is possible. Also, in the flip chip method and the direct chip attach method, the method of mounting a semiconductor element on a board that is an insulating substrate is usually sealed on one side with the semiconductor element enclosed, or in a gap between the insulating substrate and the semiconductor element. Filling and curing a molten thermosetting resin composition and sealing the resin is performed. However, these semiconductor devices have a problem that the package is warped due to curing shrinkage of the sealing resin and mismatch between the linear expansion coefficients of the insulating substrate and the sealing resin.
上記のような反りを発生した半導体装置は、反り応力による封止界面の剥離等が生じ信頼性を低下させたり、さらには実装基板への実装性が劣る結果となる。このために片面封止型パッケージの反りを向上させることが強く望まれている。 A semiconductor device that has warped as described above results in peeling of the sealing interface due to warping stress and the like, resulting in poor reliability, and poor mounting on a mounting substrate. For this reason, it is strongly desired to improve the warpage of the single-side sealed package.
本発明は、このような事情に鑑みなされたもので、良好な流動性および成形性を有するとともに、反りの発生が抑制され、かつ半田耐熱性に優れた片面封止タイプの半導体装置を得ることのできる半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置の提供をその目的とする。 The present invention has been made in view of such circumstances, and obtains a single-side sealed semiconductor device that has good fluidity and moldability, is suppressed in warpage, and has excellent solder heat resistance. An object of the present invention is to provide an epoxy resin composition for encapsulating a semiconductor and a semiconductor device using the same.
上記の目的を達成するため、本発明は、絶縁基板の片面に搭載された半導体素子の、半導体素子搭載面側のみを樹脂封止するために用いられるエポキシ樹脂組成物であって、下記の（Ａ）〜（Ｃ）成分を含有する半導体封止用エポキシ樹脂組成物を第１の要旨とする。
（Ａ）下記の一般式（ａ）で表されるビフェニル型エポキシ樹脂および下記の一般式（ｂ）で表されるヒドロキノン型エポキシ樹脂からなるエポキシ樹脂。
（ｘ）平均粒径２０〜６０μｍ。
（ｙ）上記（ｘ）である平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径をαとした場合、０．１α≦平均粒径（μｍ）≦０．２αで表される平均粒径。
（ｚ）上記（ｘ）である平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径をαとした場合、０．０１α≦平均粒径（μｍ）＜０．１αで表される平均粒径。
In order to achieve the above object, the present invention provides an epoxy resin composition used for resin-sealing only a semiconductor element mounting surface side of a semiconductor element mounted on one side of an insulating substrate. The epoxy resin composition for semiconductor encapsulation containing the components A) to (C) is a first gist.
(A) An epoxy resin comprising a biphenyl type epoxy resin represented by the following general formula (a) and a hydroquinone type epoxy resin represented by the following general formula (b).
(X) Average particle size of 20-60 μm.
(Y) When the average particle diameter of the inorganic filler selected and used from the above (x) having an average particle diameter of 20 to 60 μm is α, 0.1α ≦ average particle diameter (μm) ≦ 0.2α The average particle size represented.
(Z) When the average particle diameter of the inorganic filler selected and used from the above (x) having an average particle diameter of 20 to 60 μm is α, 0.01α ≦ average particle diameter (μm) <0.1α The average particle size represented.
また、上記半導体封止用エポキシ樹脂組成物を用いて、半導体素子が搭載された絶縁基板の半導体素子搭載面側のみを封止してなる半導体装置を第２の要旨とする。 A second gist is a semiconductor device in which only the semiconductor element mounting surface side of an insulating substrate on which a semiconductor element is mounted is sealed using the above epoxy resin composition for semiconductor sealing.
すなわち、本発明者らは、良好な流動性および成形性とともに片面封止タイプの半導体装置の反りの発生を抑制することができ、半田耐熱性に優れた半導体封止用エポキシ樹脂組成物を得るために一連の研究を重ねた。その結果、エポキシ樹脂として上記２種類のエポキシ樹脂を必須成分とし、かつ硬化剤成分として上記一般式（１）で表されるナフトール系化合物を必須成分として用いるとともに、上記特定の粒度分布を有する無機質充填剤を併用すると、パッケージにおける反りの抑制効果が向上し、実装性さらには半田耐熱性等の信頼性に優れた封止材料が得られることを見出し本発明に到達した。 That is, the present inventors can suppress the occurrence of warpage of a single-side sealed semiconductor device with good fluidity and moldability, and obtain an epoxy resin composition for semiconductor encapsulation excellent in solder heat resistance. A series of research was repeated for this purpose. As a result, the above two types of epoxy resins as essential components are used as epoxy resins, and the naphthol compound represented by the above general formula (1) is used as an essential component as a curing agent component, and an inorganic substance having the above specific particle size distribution. It has been found that when a filler is used in combination, the effect of suppressing warpage in the package is improved, and a sealing material excellent in mounting properties and reliability such as solder heat resistance can be obtained.
以上のように、本発明は、片面封止タイプの半導体装置の封止に用いられる、エポキシ樹脂として上記２種類のエポキシ樹脂を必須成分とし、かつ前記一般式（１）で表されるナフトール系化合物を必須成分として含有する硬化剤（Ｂ成分）を用いるとともに、前記特定の粒度分布を有する無機質充填剤（Ｃ成分）を含有する半導体封止用エポキシ樹脂組成物である。このため、上記無機質充填剤が高充填であったとしても、良好な流動性を有するとともに、これを片面封止タイプの半導体装置の封止材料として用いた場合、反りの発生が抑制され、半田耐熱性等の信頼性にも優れた片面封止タイプの半導体装置を得ることができる。 As described above, the present invention uses the above-mentioned two types of epoxy resins as essential components as an epoxy resin used for sealing a single-side sealed semiconductor device, and is represented by the general formula (1). While using the hardening | curing agent (B component) which contains a compound as an essential component, it is the epoxy resin composition for semiconductor sealing containing the inorganic filler (C component) which has the said specific particle size distribution. For this reason, even if the inorganic filler is highly filled, it has good fluidity, and when it is used as a sealing material for a single-sided sealing type semiconductor device, the occurrence of warpage is suppressed, and soldering is performed. A single-side sealed semiconductor device having excellent reliability such as heat resistance can be obtained.
そして、上記Ｂ成分中のナフトール系化合物の含有割合を、硬化剤（Ｂ成分）全体の３０重量％以上に設定すると、より一層良好な流動性を確保したまま、反り発生の抑制効果が得られる。 And if the content rate of the naphthol type compound in the said B component is set to 30 weight% or more of the whole hardening | curing agent (B component), the suppression effect of curvature generation | occurrence | production will be acquired, ensuring much better fluidity | liquidity. .
さらに、Ｄ成分として金属水酸化物を用いると、優れた難燃作用を奏するとともに、多面体形状のものを用いた場合エポキシ樹脂組成物の流動性の低下を抑制することができるようになる。 Furthermore, when a metal hydroxide is used as the D component, an excellent flame retarding effect can be obtained, and when a polyhedral shape is used, a decrease in fluidity of the epoxy resin composition can be suppressed.
つぎに、本発明の実施の形態について詳しく説明する。 Next, embodiments of the present invention will be described in detail.
本発明の半導体封止用エポキシ樹脂組成物は、絶縁基板の片面に搭載された半導体素子の、半導体素子搭載面側のみを樹脂封止する際に用いられるものであって、特定のエポキシ樹脂（Ａ成分）と、特定のナフトール系化合物を必須成分として含有する硬化剤（Ｂ成分）と、特定の粒度分布を有する無機質充填剤（Ｃ成分）を用いて得られ、通常、粉末状もしくはこれを打錠したタブレット状になっている。 The epoxy resin composition for semiconductor encapsulation of the present invention is used when resin-sealing only a semiconductor element mounting surface side of a semiconductor element mounted on one side of an insulating substrate, and is a specific epoxy resin ( A component), a curing agent (B component) containing a specific naphthol compound as an essential component, and an inorganic filler (C component) having a specific particle size distribution. It is like a tablet.
なお、本発明において、片面封止タイプの半導体装置としては、例えば、絶縁基板の片面に搭載した半導体素子の、半導体素子搭載面側のみを半導体素子を内包するよう樹脂封止したタイプの半導体装置や、絶縁基板の片面に半導体素子を搭載する際、両者の間に接続用電極を介して空隙が形成されるよう半導体素子が搭載され、上記空隙に封止材料を充填して硬化させ樹脂封止したタイプの半導体装置等があげられる。 In the present invention, as a single-side sealed semiconductor device, for example, a semiconductor device in which a semiconductor element mounted on one side of an insulating substrate is sealed with a resin so that only the semiconductor element mounting surface side is included. Alternatively, when mounting a semiconductor element on one side of an insulating substrate, the semiconductor element is mounted so that a gap is formed between the two via a connection electrode, and the gap is filled with a sealing material and cured to be resin-sealed. Stopped type semiconductor devices and the like.
本発明に用いるエポキシ樹脂（Ａ成分）は、下記の一般式（ａ）で表されるビフェニル型エポキシ樹脂と、下記の一般式（ｂ）で表されるヒドロキノン型エポキシ樹脂からなるものである。両者の使用割合は、通常、重量基準で１：１である。 The epoxy resin (component A) used in the present invention is composed of a biphenyl type epoxy resin represented by the following general formula (a) and a hydroquinone type epoxy resin represented by the following general formula (b). The usage ratio of both is usually 1: 1 on a weight basis.
上記エポキシ樹脂（Ａ成分）とともに用いられる硬化剤（Ｂ成分）は、下記の一般式（１）で表されるナフトール系化合物を必須成分として含有するものである。 The curing agent (component B) used together with the epoxy resin (component A) contains a naphthol compound represented by the following general formula (1) as an essential component.
上記一般式（１）で表されるナフトール系化合物としては、例えば、水酸基当量２００〜２１０、軟化点７０〜８０℃のものを用いることが好ましい。また、本発明においては、硬化剤（Ｂ成分）が上記ナフトール系化合物のみから構成されてもよいし、従来公知の各種フェノール樹脂との併用であってもよい。そして、上記一般式（１）で表されるナフトール系化合物は、硬化剤（Ｂ成分）全体の３０重量％以上を占めることが好ましい。より好ましくは４０重量％以上であり、特に好ましくは５０〜７０重量％の範囲である。すなわち、ナフトール系化合物が、硬化剤（Ｂ成分）全体中の３０重量％未満では、流動性の確保は可能であるが、反りの抑制効果が低減する傾向がみられるからである。 As the naphthol compound represented by the general formula (1), for example, a hydroxyl group equivalent of 200 to 210 and a softening point of 70 to 80 ° C. are preferably used. Moreover, in this invention, a hardening | curing agent (B component) may be comprised only from the said naphthol type compound, and combined use with conventionally well-known various phenol resins may be sufficient. And it is preferable that the naphthol type compound represented by the said General formula (1) occupies 30 weight% or more of the whole hardening | curing agent (B component). More preferably, it is 40 weight% or more, Most preferably, it is the range of 50 to 70 weight%. That is, when the naphthol compound is less than 30% by weight in the entire curing agent (component B), fluidity can be ensured, but the warpage suppressing effect tends to be reduced.
上記硬化剤（Ｂ成分）として、上記一般式（１）で表されるナフトール系化合物とともに従来公知の各種フェノール樹脂を併用する場合の上記併用するフェノール樹脂としては、例えば、下記の一般式（２）、式（３）、式（４）で表される各フェノール樹脂があげられる。これらフェノール樹脂を併用することにより、より信頼性の高い特性を得ることができる。上記式（２）〜（４）で表されるフェノール樹脂は単独でもしくは２種以上併せて用いることができる。 As said hardening agent (B component), when using conventionally well-known various phenol resins together with the naphthol type compound represented by the said General formula (1), as said phenol resin used together, for example, following General formula (2) ), Formula (3), and each phenol resin represented by formula (4). By using these phenol resins in combination, more reliable characteristics can be obtained. The phenol resins represented by the above formulas (2) to (4) can be used alone or in combination of two or more.
上記式（２）において、繰り返し数ｒは０以上の整数である。そして、上記式（３）において、繰り返し数ｎは０以上の整数である。また、上記式（４）において、繰り返し数ｐ，ｑはそれぞれ、１以上の整数である。なお、上記式（４）で表されるフェノール樹脂における、繰り返し単位ｐ，ｑは、ブロック，ランダム，交互等の態様のいずれであってもよい。 In the above formula (2), the repetition number r is an integer of 0 or more. In the above formula (3), the repetition number n is an integer of 0 or more. In the above formula (4), the repetition numbers p and q are each an integer of 1 or more. In addition, the repeating units p and q in the phenol resin represented by the above formula (4) may be in any form such as block, random, and alternating.
したがって、上記式（２）〜（４）で表されるフェノール樹脂を単独でもしくは２種以上前記一般式（１）で表されるナフトール系化合物と併用する際には、先に述べたように、前記一般式（１）で表されるナフトール系化合物の占める割合が硬化剤（Ｂ成分）全体の少なくとも３０重量％となることが好ましい。 Therefore, when the phenol resins represented by the above formulas (2) to (4) are used alone or in combination with two or more naphthol compounds represented by the above general formula (1), as described above. The proportion of the naphthol compound represented by the general formula (1) is preferably at least 30% by weight of the entire curing agent (component B).
上記エポキシ樹脂（Ａ成分）と硬化剤（Ｂ成分）の配合割合は、エポキシ樹脂中のエポキシ基１当量あたり、硬化剤中の水酸基当量が０．５〜２．０当量となるように配合することが好ましい。より好ましくは０．８〜１．２当量である。 The mixing ratio of the epoxy resin (component A) and the curing agent (component B) is such that the hydroxyl group equivalent in the curing agent is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin. It is preferable. More preferably, it is 0.8-1.2 equivalent.
上記Ａ成分およびＢ成分とともに用いられる無機質充填剤（Ｃ成分）としては、各種公知の無機質充填剤が用いられる。例えば、石英ガラス粉末，シリカ粉末，アルミナ，タルク等があげられる。特に好ましくは溶融球状シリカ粉末があげられる。 Various known inorganic fillers are used as the inorganic filler (C component) used together with the A component and the B component. Examples thereof include quartz glass powder, silica powder, alumina, talc and the like. Particularly preferred is fused spherical silica powder.
そして、上記無機質充填剤（Ｃ成分）は、下記の平均粒径（ｘ）〜（ｚ）を有する３種類の無機質充填剤の混合物である。上記平均粒径は、レーザー散乱式粒度分布測定装置により測定した。
（ｘ）平均粒径２０〜６０μｍ。
（ｙ）上記（ｘ）である平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径をαとした場合、０．１α≦平均粒径（μｍ）≦０．２αで表される平均粒径。
（ｚ）上記（ｘ）である平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径をαとした場合、０．０１α≦平均粒径（μｍ）＜０．１αで表される平均粒径。
And the said inorganic filler (C component) is a mixture of 3 types of inorganic fillers which have the following average particle diameter (x)-(z). The average particle size was measured with a laser scattering particle size distribution measuring device.
(X) Average particle size of 20-60 μm.
(Y) When the average particle diameter of the inorganic filler selected and used from the above (x) having an average particle diameter of 20 to 60 μm is α, 0.1α ≦ average particle diameter (μm) ≦ 0.2α The average particle size represented.
(Z) When the average particle diameter of the inorganic filler selected and used from the above (x) having an average particle diameter of 20 to 60 μm is α, 0.01α ≦ average particle diameter (μm) <0.1α The average particle size represented.
すなわち、このような３種類の平均粒径、平均粒径の大きな無機質充填剤（ｘ）と、中程度の粒径の無機質充填剤（ｙ）と、小さい粒径の無機質充填剤（ｚ）を、それぞれ下記に示す割合(i) 〜(iii) に配合する必要がある。このような 割合となるよう混合することにより、良好な流動性が得られ、金線流れ等の成形信頼性が高く、バリ発生等の成形作業においても良好な結果が得られる。 That is, such three kinds of average particle size, an inorganic filler (x) having a large average particle size, an inorganic filler (y) having a medium particle size, and an inorganic filler (z) having a small particle size. The ratios (i) to (iii) shown below must be blended. By mixing in such a ratio, good fluidity can be obtained, gold wire flow and other molding reliability is high, and good results can be obtained even in molding operations such as generation of burrs.
(i) 平均粒径２０〜６０μｍ（ｘ）の無機質充填剤が混合物全体の５０〜９２重量％。
(ii)０．１α≦平均粒径（μｍ）≦０．２αで表される平均粒径（ｙ）の無機質充填剤が混合物全体の５〜４０重量％。
(iii) ０．０１α≦平均粒径（μｍ）＜０．１αで表される平均粒径（ｚ）の無機質充填剤が混合物全体の３〜１５重量％。
〔ただし、αは上記（ｘ）における平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径である。〕
(i) An inorganic filler having an average particle diameter of 20 to 60 μm (x) is 50 to 92% by weight of the whole mixture.
(ii) The inorganic filler having an average particle size (y) represented by 0.1α ≦ average particle size (μm) ≦ 0.2α is 5 to 40% by weight of the entire mixture.
(iii) The inorganic filler having an average particle size (z) represented by 0.01α ≦ average particle size (μm) <0.1α is 3 to 15% by weight of the entire mixture.
[However, α is the average particle size of the inorganic filler selected from the average particle size of 20 to 60 μm in (x) above. ]
そして、上記粒度分布を有する無機質充填剤（Ｃ成分）として、特に溶融シリカ粉末が好ましく用いられるが、さらにこの粒度分布を有する溶融シリカ粉末全体の６０重量％以上が、真円度０．７以上であることが好ましい。特に好ましくは、全体の８０重量％以上が真円度０．８以上であることである。すなわち、溶融シリカ粉末全体の特定割合以上が高い真円度であることにより、より一層流動性が向上し、先に述べたように、高い成形信頼性が得られるようになるからである。 And as an inorganic filler (C component) which has the said particle size distribution, although fused silica powder is used preferably especially, 60 weight% or more of the whole fused silica powder which has this particle size distribution is roundness 0.7 or more. It is preferable that Particularly preferably, 80% by weight or more of the total has a roundness of 0.8 or more. That is, when the roundness is higher than a specific ratio of the entire fused silica powder, the fluidity is further improved, and high molding reliability can be obtained as described above.
なお、上記真円度は、つぎのようにして算出される。すなわち、図１（ａ）に示すように、真円度の測定対象となる対象物の投影像１において、その実面積をαとし、上記投影像１の周囲の長さをＰＭとした場合、図１（ｂ）に示すように、上記投影像１と周囲の長さが同じＰＭとなる真円の投影像２を想定する。そして、上記投影像２の面積α′を算出する。その結果、上記投影像１の実面積αと投影像２の面積α′の比（α／α′）が真円度を示し、この値（α／α′）は下記の数式（Ａ）により算出される。したがって、真円度が１．０とは、この定義からも明らかなように、真円であるといえる。そして、対象物の外周に凹凸が多ければ多いほどその真円度は１．０よりも順次小さくなる。なお、本発明において、上記無機質充填剤の真円度とは、測定対象となる無機質充填剤から一部を抽出し上記方法にて測定して得られる値であり、通常、平均の真円度をいう。
The roundness is calculated as follows. That is, as shown in FIG. 1A, in the projection image 1 of the object to be measured for roundness, when the actual area is α and the perimeter of the projection image 1 is PM, As shown in FIG. 1B, a
このような粒度分布を有する無機質充填剤（Ｃ成分）の配合量は、エポキシ樹脂組成物全体の７５重量％以上であることが好ましく、より好ましくは８０〜９１重量％の範囲である。すなわち、７５重量％未満のように少なすぎると、耐半田特性や、片面封止タイプの半導体装置において反りレベルでの特性が劣る傾向がみられるからである。 The blending amount of the inorganic filler (C component) having such a particle size distribution is preferably 75% by weight or more, more preferably in the range of 80 to 91% by weight based on the entire epoxy resin composition. That is, if the amount is too small, such as less than 75% by weight, the solder resistance characteristics and the warp level characteristics tend to be inferior in a single-side sealed type semiconductor device.
さらに、Ｄ成分として、難燃剤としての金属水酸化物を用いてもよい。このような金属水酸化物としては、多面体形状のものを用いることが好ましい。すなわち、六角板形状を有するもの、あるいは鱗片状等のように、いわゆる厚みの薄い平板形状の結晶形状を有するものではなく、縦，横とともに厚み方向（ｃ軸方向）に結晶成長してより立体的かつ球状に近似させた球状の結晶形状、例えば、略１２面体、略８面体、略４面体等の形状を有する金属水酸化物をいい、通常、これらの混合物である。もちろん、上記多面体形状は、結晶の成長の仕方以外にも、粉砕や摩砕等によっても多面体の形は変化し、より立体的かつ球状に近似させることが可能となる。このように、本発明では、上記多面体形状を有する金属水酸化物を用いることにより、鱗片状等のような平板形状の結晶形状を有するものに比べ、エポキシ樹脂組成物の流動性の低下を抑制することが可能となる。 Furthermore, you may use the metal hydroxide as a flame retardant as D component. As such a metal hydroxide, it is preferable to use a polyhedral shape. That is, it does not have a so-called thin plate-like crystal shape such as a hexagonal plate shape or a scale-like shape, but grows more vertically and horizontally in the thickness direction (c-axis direction). A metal hydroxide having a spherical crystal shape approximated to a target and spherical shape, for example, a substantially dodecahedron, a substantially octahedron, a substantially tetrahedron, or the like, and is usually a mixture thereof. Of course, the shape of the polyhedron changes not only in the manner of crystal growth, but also by pulverization, grinding, etc., and can be approximated more three-dimensionally and spherically. As described above, in the present invention, by using the metal hydroxide having the polyhedral shape, a decrease in the fluidity of the epoxy resin composition is suppressed as compared with those having a flat crystal shape such as a scale shape. It becomes possible to do.
このような金属水酸化物としては、具体的には、下記の一般式（５）で表される金属水酸化物があげられる。 Specific examples of such a metal hydroxide include metal hydroxides represented by the following general formula (5).
上記金属水酸化物の含有量は、配合する場合、エポキシ樹脂組成物全体の０．１〜３０重量％、特には０．５〜２５重量％の範囲に設定することが好ましい。すなわち、上記金属水酸化物が０．１重量％未満では、充分な難燃効果を得ることが困難であり、また、３０重量％を超えると、流動性が低下し、ワイヤー流れ等の不良を引き起こす傾向がみられるからである。 When blended, the content of the metal hydroxide is preferably set in the range of 0.1 to 30% by weight, particularly 0.5 to 25% by weight of the entire epoxy resin composition. That is, if the metal hydroxide is less than 0.1% by weight, it is difficult to obtain a sufficient flame retardant effect. If the metal hydroxide exceeds 30% by weight, the fluidity is lowered and defects such as wire flow are caused. This is because there is a tendency to cause.
本発明では、上記Ａ〜Ｃ成分および場合によりＤ成分に加えて、必要に応じて硬化促進剤、上記Ｄ成分以外のノボラック型ブロム化エポキシ樹脂等のハロゲン系の難燃剤や三酸化アンチモン等の難燃助剤、カーボンブラック等の顔料、β−（３，４−エポキシシクロヘキシル）エチルトリメトキシシランやγ−グリシドキシプロピルトリメトキシシラン等のシランカップリング剤、カーボンブラック等の顔料等他の添加剤が適宜に用いられる。 In the present invention, in addition to the components A to C and optionally the component D, if necessary, a curing accelerator, a halogen-based flame retardant such as a novolak-type brominated epoxy resin other than the component D, antimony trioxide, etc. Flame retardant aids, pigments such as carbon black, silane coupling agents such as β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and γ-glycidoxypropyltrimethoxysilane, pigments such as carbon black, etc. Additives are used as appropriate.
上記硬化促進剤としては、アミン型，リン型等のものがあげられる。アミン型としては、２−メチルイミダゾール等のイミダゾール類、トリエタノールアミン，ジアザビシクロウンデセン等の三級アミン類等があげられる。また、リン型としては、トリフェニルホスフィン等があげられる。これらは単独でもしくは併せて用いられる。そして、この硬化促進剤の配合割合は、エポキシ樹脂組成物全体の０．１〜１．０重量％の割合に設定することが好ましい。さらに、エポキシ樹脂組成物の流動性を考慮すると好ましくは０．１５〜０．３５重量％である。 Examples of the curing accelerator include amine type and phosphorus type. Examples of the amine type include imidazoles such as 2-methylimidazole and tertiary amines such as triethanolamine and diazabicycloundecene. Examples of the phosphorus type include triphenylphosphine. These may be used alone or in combination. And it is preferable to set the mixture ratio of this hardening accelerator to the ratio of 0.1 to 1.0 weight% of the whole epoxy resin composition. Furthermore, when considering the fluidity of the epoxy resin composition, it is preferably 0.15 to 0.35% by weight.
本発明の半導体封止用エポキシ樹脂組成物は、例えばつぎのようにして製造することができる。すなわち、上記Ａ〜Ｃ成分および場合によりＤ成分、ならびに必要に応じて他の添加剤を配合し混合した後、ミキシングロール機等の混練機にかけ加熱状態で溶融混合し、これを室温に冷却した後、公知の手段によって粉砕し、必要に応じて打錠するという一連の工程により製造することができる。 The epoxy resin composition for semiconductor encapsulation of the present invention can be produced, for example, as follows. That is, after mixing and mixing the above-mentioned components A to C and optionally D component, and other additives as required, the mixture was melted and mixed in a kneading machine such as a mixing roll machine, and cooled to room temperature. Thereafter, it can be produced by a series of steps of pulverization by known means and tableting as necessary.
このようなエポキシ樹脂組成物を用いての絶縁基板の片面に搭載された半導体素子の封止は、特に制限するものではなく、通常のトランスファー成形等の公知のモールド方法により行うことができる。 The sealing of the semiconductor element mounted on one side of the insulating substrate using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as normal transfer molding.
つぎに、実施例について比較例と併せて説明する。 Next, examples will be described together with comparative examples.
下記に示す各成分を準備した。 Each component shown below was prepared.
〔エポキシ樹脂ａ〕
下記の一般式（ａ）で表されるビフェニル型エポキシ樹脂（エポキシ当量１９１、融点１０５℃）
Biphenyl type epoxy resin represented by the following general formula (a) (epoxy equivalent 191; melting point 105 ° C.)
〔エポキシ樹脂ｂ〕
下記の一般式（ｂ）で表されるヒドロキノン型エポキシ樹脂（エポキシ当量１７５、軟化点１４５℃）
Hydroquinone type epoxy resin represented by the following general formula (b) (epoxy equivalent 175, softening point 145 ° C.)
〔フェノール樹脂ａ〕
前記一般式（１）で表されるナフトール系化合物（水酸基当量１７５、軟化点７５℃）
[Phenolic resin a]
A naphthol compound represented by the general formula (1) (hydroxyl equivalent: 175, softening point: 75 ° C.)
〔フェノール樹脂ｂ〕
前記一般式（２）で表されるフェノール樹脂（水酸基当量１０７、軟化点９２℃）
[Phenolic resin b]
Phenol resin represented by the general formula (2) (hydroxyl equivalent 107, softening point 92 ° C.)
〔フェノール樹脂ｃ〕
前記一般式（３）で表されるフェノール樹脂（水酸基当量９７、軟化点９８℃）
[Phenolic resin c]
Phenol resin represented by the general formula (3) (hydroxyl equivalent 97, softening point 98 ° C.)
〔フェノール樹脂ｄ〕
前記一般式（４）で表されるフェノール樹脂（繰り返し単位ｐ，ｑはブロック重合の態様である）（水酸基当量１５７、軟化点７６℃）
[Phenolic resin d]
Phenol resin represented by the general formula (4) (repeating units p and q are embodiments of block polymerization) (hydroxyl equivalent 157, softening point 76 ° C.)
〔フェノール樹脂ｅ〕
下記の一般式（ｅ）で表されるフェノール樹脂（水酸基当量１７０、軟化点８３℃）
Phenol resin represented by the following general formula (e) (hydroxyl equivalent: 170, softening point: 83 ° C.)
〔無機質充填剤ａ〜ｃ〕
下記の表１に示す各種シリカ粉末を準備した。
[Inorganic fillers a to c]
Various silica powders shown in Table 1 below were prepared.
〔カップリング剤〕
β−（３，４−エポキシシクロヘキシル）エチルトリメトキシシラン
[Coupling agent]
β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane
〔硬化促進剤〕
トリフェニルホスフィン
[Curing accelerator]
Triphenylphosphine
〔金属水酸化物〕
多面体形状の結晶構造の金属水酸化物（タテホ化学工業社製、エコーマグＺ−１０）
[Metal hydroxide]
Metal hydroxide with polyhedral crystal structure (Echo Mug Z-10, manufactured by Tateho Chemical Industry Co., Ltd.)
〔実施例１〜１１、比較例１〜６〕
下記の表２〜表４に示す各原料を、同表に示す割合で配合し、８０〜１２０℃に加熱したロール混練機（５分間）にかけて溶融混練した。つぎに、この溶融物を冷却した後粉砕し、さらにタブレット状に打錠することにより半導体封止用エポキシ樹脂組成物を得た。
[Examples 1-11, Comparative Examples 1-6]
The raw materials shown in Tables 2 to 4 below were blended in the proportions shown in the same table, and melt kneaded by applying a roll kneader (5 minutes) heated to 80 to 120 ° C. Next, the melt was cooled and then pulverized, and further compressed into a tablet to obtain an epoxy resin composition for semiconductor encapsulation.
このようにして得られた実施例および比較例のエポキシ樹脂組成物を用い、下記の方法に従って、スパイラルフロー値およびゲルタイムを、さらに半導体パッケージの反り量、耐半田性を測定・評価した。その結果を後記の表５〜表７に併せて示す。 Using the epoxy resin compositions of Examples and Comparative Examples thus obtained, the spiral flow value and gel time, the warpage amount of the semiconductor package, and the solder resistance were further measured and evaluated according to the following methods. The results are also shown in Tables 5 to 7 below.
〔スパイラルフロー値〕
スパイラルフロー測定用金型を用い、１７５±５℃にてＥＭＭＩ １−６６に準じて測定した。
[Spiral flow value]
Measurement was performed at 175 ± 5 ° C. according to EMMI 1-66 using a spiral flow measurement mold.
〔ゲルタイム〕
規定温度（１７５℃）の熱平板上に試料（２００〜５００ｍｇ）を載せ、攪拌しながら熱平板上に薄く引き伸ばし、試料が熱平板上に溶融した点から硬化するまでの時間を読み取りゲル化時間とした。
[Geltime]
A sample (200 to 500 mg) is placed on a hot plate at a specified temperature (175 ° C.), stretched thinly on the hot plate while stirring, and the time from the point at which the sample melts on the hot plate to cure is read. It was.
〔反り量〕
上記のようして得られた各エポキシ樹脂組成物製タブレットを用い、絶縁基板上に搭載された半導体素子をトランスファー成形（条件：１７５℃×１分＋１７５℃×５時間の後硬化）することにより図２に示す片面封止タイプの半導体装置を作製した。図２において、３は半導体素子４を搭載した絶縁基板で、５は半導体素子４と絶縁基板３上の回路部分（図示せず）とを接続するボンディングワイヤー、６は半導体素子４を封止した樹脂封止層、７は絶縁基板３の他面に形成された半田製球状接続電極である。
樹脂封止層６（エポキシ樹脂組成物硬化体）サイズ：３０×３０×厚み１．２ｍｍ
半導体素子４サイズ：１０×１０×厚み０．３７ｍｍ
絶縁基板３サイズ：ビスマレイミドトリアジン（ＢＴ）樹脂／ガラスクロス基板
[Warpage amount]
By using each epoxy resin composition tablet obtained as described above, transfer molding of the semiconductor element mounted on the insulating substrate (conditions: 175 ° C. × 1 minute + 175 ° C. × 5 hours post-curing) A single-side sealed semiconductor device shown in FIG. 2 was produced. 2, 3 is an insulating substrate on which the
Resin sealing layer 6 (cured epoxy resin composition) size: 30 × 30 × thickness 1.2 mm
Insulating substrate 3 size: bismaleimide triazine (BT) resin / glass cloth substrate
上記のようにして得られた各半導体装置について、マイクロディプスメーターを用いて反り量を測定した。 About each semiconductor device obtained as mentioned above, the curvature amount was measured using the micro depth meter.
〔耐半田性〕
上記半導体装置を用い、下記の条件（ａ），（ｂ）にて吸湿させた後、赤外線リフロー（条件：２６０℃×１０秒間）の評価試験（耐半田性）を行った。そして、クラックが発生した個数（２０個中）を測定した。
（ａ）３０℃／６０％ＲＨ×１６８時間
（ｂ）６０℃／６０％ＲＨ×１２０時間
[Solder resistance]
The semiconductor device was used to absorb moisture under the following conditions (a) and (b), and then an infrared reflow (condition: 260 ° C. × 10 seconds) evaluation test (solder resistance) was performed. Then, the number of cracks (out of 20) was measured.
(A) 30 ° C./60% RH × 168 hours (b) 60 ° C./60% RH × 120 hours
上記表５〜表７から、実施例品は、スパイラルフロー値およびゲルタイムの各値から良好な流動性を備えていることがわかる。しかも、反り量が小さく、耐半田性試験においても優れた評価結果が得られ、信頼性の高い半導体装置が得られたことがわかる。 From Tables 5 to 7, it can be seen that the example products have good fluidity from the values of the spiral flow value and the gel time. Moreover, the amount of warpage is small, and an excellent evaluation result is obtained even in a solder resistance test, indicating that a highly reliable semiconductor device is obtained.
これに対して、前記一般式（１）で表されるナフトール系化合物を配合していない比較例１，２品では、反り量が高く、しかも耐半田性試験において、前記（ｂ）の条件での測定結果が悪く信頼性に劣るものであることがわかる。また、無機質充填剤の混合割合が前記特定の範囲を外れる比較例３〜６品では、粘度の増加が著しいために、良好な流動性が得られなかった。 On the other hand, in Comparative Examples 1 and 2 in which the naphthol compound represented by the general formula (1) is not blended, the warpage amount is high, and in the solder resistance test, the condition (b) is satisfied. It can be seen that the measurement result is poor and the reliability is poor. Further, in Comparative Examples 3 to 6 in which the mixing ratio of the inorganic filler was outside the above specific range, the viscosity was remarkably increased, so that good fluidity was not obtained.
Claims (4)
（Ａ）下記の一般式（ａ）で表されるビフェニル型エポキシ樹脂および下記の一般式（ｂ）で表されるヒドロキノン型エポキシ樹脂からなるエポキシ樹脂。
（ｘ）平均粒径２０〜６０μｍ。
（ｙ）上記（ｘ）である平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径をαとした場合、０．１α≦平均粒径（μｍ）≦０．２αで表される平均粒径。
（ｚ）上記（ｘ）である平均粒径２０〜６０μｍのもののうちから選択使用した無機質充填剤の平均粒径をαとした場合、０．０１α≦平均粒径（μｍ）＜０．１αで表される平均粒径。 An epoxy resin composition used for resin-sealing only a semiconductor element mounting surface side of a semiconductor element mounted on one side of an insulating substrate, which contains the following components (A) to (C) Stopping epoxy resin composition.
(A) An epoxy resin comprising a biphenyl type epoxy resin represented by the following general formula (a) and a hydroquinone type epoxy resin represented by the following general formula (b).
(X) Average particle size of 20-60 μm.
(Y) When the average particle diameter of the inorganic filler selected and used from the above (x) having an average particle diameter of 20 to 60 μm is α, 0.1α ≦ average particle diameter (μm) ≦ 0.2α The average particle size represented.
(Z) When the average particle diameter of the inorganic filler selected and used from the above (x) having an average particle diameter of 20 to 60 μm is α, 0.01α ≦ average particle diameter (μm) <0.1α The average particle size represented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007011702A JP2007169655A (en) | 2007-01-22 | 2007-01-22 | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007011702A JP2007169655A (en) | 2007-01-22 | 2007-01-22 | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002171490A Division JP3967205B2 (en) | 2002-06-12 | 2002-06-12 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2007169655A true JP2007169655A (en) | 2007-07-05 |
Family
ID=38296607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007011702A Pending JP2007169655A (en) | 2007-01-22 | 2007-01-22 | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007169655A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009235164A (en) * | 2008-03-26 | 2009-10-15 | Panasonic Electric Works Co Ltd | Semiconductor sealing epoxy resin composition, and single side sealing type semiconductor device manufactured by sealing semiconductor device using the composition |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111468A (en) * | 1994-10-11 | 1996-04-30 | Nitto Denko Corp | Semiconductor device |
| JP2000109649A (en) * | 1998-10-08 | 2000-04-18 | Nitto Denko Corp | Semiconductor sealing epoxy resin composition and preparation thereof and semiconductor device |
| JP2001040181A (en) * | 1999-08-03 | 2001-02-13 | Nitto Denko Corp | Epoxy resin composition for sealing semiconductor and semiconductor apparatus using the same |
| JP2001226454A (en) * | 2000-02-17 | 2001-08-21 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| WO2002024808A1 (en) * | 2000-09-25 | 2002-03-28 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing |
-
2007
- 2007-01-22 JP JP2007011702A patent/JP2007169655A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08111468A (en) * | 1994-10-11 | 1996-04-30 | Nitto Denko Corp | Semiconductor device |
| JP2000109649A (en) * | 1998-10-08 | 2000-04-18 | Nitto Denko Corp | Semiconductor sealing epoxy resin composition and preparation thereof and semiconductor device |
| JP2001040181A (en) * | 1999-08-03 | 2001-02-13 | Nitto Denko Corp | Epoxy resin composition for sealing semiconductor and semiconductor apparatus using the same |
| JP2001226454A (en) * | 2000-02-17 | 2001-08-21 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| WO2002024808A1 (en) * | 2000-09-25 | 2002-03-28 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009235164A (en) * | 2008-03-26 | 2009-10-15 | Panasonic Electric Works Co Ltd | Semiconductor sealing epoxy resin composition, and single side sealing type semiconductor device manufactured by sealing semiconductor device using the composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2011153173A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device | |
| JP2021024945A (en) | Granular semiconductor-sealing resin composition and semiconductor device | |
| JP4827192B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JP2005239892A (en) | Resin composition for semiconductor encapsulation and semiconductor device using the same | |
| JP2001064522A (en) | Semiconductor sealing resin composition | |
| JP2004018790A (en) | Epoxy resin composition and semiconductor device | |
| JP2012012431A (en) | Fluid resin composition and semiconductor apparatus | |
| JP4950010B2 (en) | Manufacturing method of epoxy resin composition for semiconductor encapsulation and manufacturing method of semiconductor device | |
| JP2007169655A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device using the same | |
| TW202225244A (en) | Resin composition for encapsulating semiconductor and semiconductor device | |
| JP3967205B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same | |
| JP2003277585A (en) | Epoxy resin composition and semiconductor device | |
| JP2002194058A (en) | Semiconductor device | |
| JP4525141B2 (en) | Method for producing epoxy resin composition for semiconductor encapsulation and method for producing epoxy resin composition for area mounting type semiconductor encapsulation | |
| JP2003277477A (en) | Epoxy resin composition and resin-sealing type semiconductor device | |
| JP3915545B2 (en) | Epoxy resin composition for sealing and single-side sealed semiconductor device | |
| JP2002080694A (en) | Epoxy resin composition and semiconductor device | |
| JP2009256475A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device using the same | |
| JP2005154717A (en) | Epoxy resin composition and semiconductor device | |
| JPH08153831A (en) | Semiconductor device | |
| JP2005325210A (en) | Epoxy resin composition for sealing semiconductor and semiconductor device using the same | |
| JP2010031119A (en) | Semiconductor-sealing epoxy resin composition and semiconductor device using it | |
| JP5201451B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JP5226957B2 (en) | Epoxy resin composition for semiconductor encapsulation and semiconductor device | |
| JP2007077237A (en) | Epoxy resin composition for sealing semiconductor, and semiconductor device by using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100518 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101005 |