JP2007166600A5 - - Google Patents

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JP2007166600A5
JP2007166600A5 JP2006307759A JP2006307759A JP2007166600A5 JP 2007166600 A5 JP2007166600 A5 JP 2007166600A5 JP 2006307759 A JP2006307759 A JP 2006307759A JP 2006307759 A JP2006307759 A JP 2006307759A JP 2007166600 A5 JP2007166600 A5 JP 2007166600A5
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Prior art keywords
pixels
capacitance
imaging device
solid
photoelectric conversion
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JP2006307759A
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Japanese (ja)
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JP4533367B2 (en
JP2007166600A (en
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Priority to JP2006307759A priority Critical patent/JP4533367B2/en
Priority claimed from JP2006307759A external-priority patent/JP4533367B2/en
Priority to KR1020060112522A priority patent/KR100842513B1/en
Priority to RU2006140751/09A priority patent/RU2337502C2/en
Publication of JP2007166600A publication Critical patent/JP2007166600A/en
Publication of JP2007166600A5 publication Critical patent/JP2007166600A5/ja
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Publication of JP4533367B2 publication Critical patent/JP4533367B2/en
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Claims (9)

各々が光電変換素子を有する複数の画素と、
前記複数の画素が共通に接続されるとともに、前記画素から出力される電気信号が伝達される信号線と、
入力端子が第一の容量素子を介して前記信号線と接続される増幅器と、
前記増幅器の前記入力端子と出力端子とを接続する第二の容量素子と、を有し、
前記複数の画素から出力される前記電気信号を加算するモードと、前記複数の画素から出力される前記電気信号を加算しない非加算モードと、を実行し、
前記加算モードにおける前記第一の容量素子の容量値の前記第二の容量素子の容量値に対する比が、前記非加算モードにおける前記第一の容量素子の容量値の前記第二の容量素子の容量値に対する比よりも小さいこと
を特徴とする固体撮像装置。 A plurality of pixels each having a photoelectric conversion element;
A plurality of pixels connected in common and a signal line through which an electrical signal output from the pixels is transmitted;
An amplifier having an input terminal connected to the signal line via a first capacitive element;
A second capacitive element connecting the input terminal and the output terminal of the amplifier,
A mode of adding the electrical signals output from the plurality of pixels and a non-addition mode of not adding the electrical signals output from the plurality of pixels;
The ratio of the capacitance value of the first capacitance element in the addition mode to the capacitance value of the second capacitance element is the capacitance of the second capacitance element in the capacitance value of the first capacitance element in the non-addition mode. A solid-state imaging device characterized by being smaller than a ratio to a value. 複数の画素と、
前記複数の画素が共通に接続されるとともに、前記画素から出力される電気信号が伝達される信号線と、
入力端子が第一の容量素子を介して前記信号線と接続される増幅器と、
前記増幅器の前記入力端子と出力端子とを接続する第二の容量素子と、を有する固体撮像装置であって、
前記複数の画素の各々は、複数の光電変換素子と、前記複数の光電変換素子がそれぞれ共通に接続され、前記複数の光電変換素子で発生した信号を増幅する画素増幅部と、を備え、
共通の前記画素増幅部に接続された複数の前記光電変換素子で発生した信号を加算する加算モードと、共通の前記画素増幅部に接続された複数の前記光電変換素子で発生した信号を加算しない非加算モードと、を実行し、
前記加算モードにおける前記第一の容量素子の容量値の前記第二の容量素子の容量値に対する比が、前記非加算モードにおける前記第一の容量素子の容量値の前記第二の容量素子の容量値に対する比よりも小さいこと
を特徴とする固体撮像装置。 A plurality of pixels;
A plurality of pixels connected in common and a signal line through which an electrical signal output from the pixels is transmitted;
An amplifier having an input terminal connected to the signal line via a first capacitive element;
A solid-state imaging device having a second capacitive element that connects the input terminal and the output terminal of the amplifier,
Each of the plurality of pixels includes a plurality of photoelectric conversion elements, and a pixel amplification unit in which the plurality of photoelectric conversion elements are connected in common and amplifies signals generated by the plurality of photoelectric conversion elements,
An addition mode for adding signals generated by a plurality of the photoelectric conversion elements connected to the common pixel amplification unit and a signal generated by the plurality of photoelectric conversion elements connected to the common pixel amplification unit are not added. Non-addition mode, and
The ratio of the capacitance value of the first capacitance element in the addition mode to the capacitance value of the second capacitance element is the capacitance of the second capacitance element in the capacitance value of the first capacitance element in the non-addition mode. Less than the ratio to the value
A solid-state imaging device. 前記加算モードにおいて加算に関与する前記光電変換素子の数をｎとして、前記加算モードにおける前記第一の容量素子の容量値の前記第二の容量素子の容量値に対する比が、前記非加算モードにおける前記第一の容量素子の容量値の前記第二の容量素子の容量値に対する比の１／ｎ倍とすることを特徴とする請求項１または２に記載の固体撮像装置。 The ratio of the capacitance value of the first capacitive element in the addition mode to the capacitance value of the second capacitive element in the addition mode is n in the non- addition mode , where n is the number of photoelectric conversion elements involved in the addition in the addition mode. 3. The solid-state imaging device according to claim 1, wherein the ratio of the capacitance value of the first capacitance element to the capacitance value of the second capacitance element is 1 / n times. 前記第一の容量素子は、互いに並列に接続された複数の容量と、１個以上のスイッチと、を有することを特徴とする請求項１ないし３のいずれかに記載の固体撮像装置。 Said first capacitive element includes a plurality of capacitors connected in parallel with each other, the solid-state imaging device according to any one of 3 claims 1 and having a one or more switches, a. 複数の前記画素に係る複数の前記光電変換素子は共通の検出部に接続され、前記複数の光電変換素子で発生した電荷が前記検出部において加算されることを特徴とする請求項１ないし４のいずれかに記載の固体撮像装置。 The plurality of the photoelectric conversion element according to a plurality of the pixels are connected to common detection unit, charges generated by the plurality of photoelectric conversion elements of claims 1 to 4, characterized in that it is added in the detecting unit The solid-state imaging device according to any one of the above. 複数の前記画素から出力される電気信号は、前記増幅器の前記第二の容量素子において加算されることを特徴とする請求項１ないし５のいずれかに記載の固体撮像装置。 Electrical signals output from the plurality of pixels, the solid-state imaging device according to any one of claims 1 to 5, characterized in that it is added in the second capacitive element of the amplifier. 前記複数の画素は行列状に配列され、The plurality of pixels are arranged in a matrix,
前記増幅器は前記画素の列毎に設けられたことを特徴とする請求項１にないし６のいずれかに記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the amplifier is provided for each column of pixels. 前記画素は、前記光電変換素子で発生した信号を増幅する画素増幅部を備えることを特徴とする請求項１に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the pixel includes a pixel amplification unit that amplifies a signal generated by the photoelectric conversion element. 前記増幅器の出力端子の後段に、増幅率が変更可能な第２の増幅器をさらに有することを特徴とする請求項１ないし８のいずれかに記載の固体撮像装置。The solid-state imaging device according to claim 1, further comprising a second amplifier whose amplification factor can be changed after the output terminal of the amplifier.
JP2006307759A 2005-11-18 2006-11-14 Solid-state imaging device Expired - Fee Related JP4533367B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006307759A JP4533367B2 (en) 2005-11-18 2006-11-14 Solid-state imaging device
KR1020060112522A KR100842513B1 (en) 2005-11-18 2006-11-15 Solid-state image pickup device
RU2006140751/09A RU2337502C2 (en) 2005-11-18 2006-11-17 Solid-state device for image capture

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005334810 2005-11-18
JP2006307759A JP4533367B2 (en) 2005-11-18 2006-11-14 Solid-state imaging device

Related Child Applications (1)

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JP2010050755A Division JP2010141928A (en) 2005-11-18 2010-03-08 Solid-state image pickup device

Publications (3)

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JP2007166600A JP2007166600A (en) 2007-06-28
JP2007166600A5 true JP2007166600A5 (en) 2009-12-24
JP4533367B2 JP4533367B2 (en) 2010-09-01

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JP2006307759A Expired - Fee Related JP4533367B2 (en) 2005-11-18 2006-11-14 Solid-state imaging device

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JP (1) JP4533367B2 (en)
KR (1) KR100842513B1 (en)
RU (1) RU2337502C2 (en)

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JP5151507B2 (en) * 2008-01-29 2013-02-27 ソニー株式会社 Solid-state imaging device, signal readout method of solid-state imaging device, and imaging apparatus
JP5266884B2 (en) * 2008-05-30 2013-08-21 ソニー株式会社 Solid-state imaging device, imaging device, and pixel driving method
JP5340643B2 (en) * 2008-06-03 2013-11-13 オリンパス株式会社 Solid-state imaging device
JP5262512B2 (en) * 2008-09-25 2013-08-14 ソニー株式会社 Image sensor, control method therefor, and camera
JP5422985B2 (en) * 2008-12-08 2014-02-19 ソニー株式会社 Pixel circuit, solid-state imaging device, and camera system
JP5406554B2 (en) * 2009-02-20 2014-02-05 キヤノン株式会社 Imaging apparatus and imaging system
JP5656484B2 (en) * 2010-07-07 2015-01-21 キヤノン株式会社 Solid-state imaging device and imaging system
JP5451547B2 (en) * 2010-07-09 2014-03-26 キヤノン株式会社 Solid-state imaging device
TWI521965B (en) * 2012-05-14 2016-02-11 Sony Corp Camera and camera methods, electronic machines and programs
JP6463002B2 (en) * 2014-05-08 2019-01-30 キヤノン株式会社 Driving method of imaging apparatus and driving method of imaging system

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JPH10257389A (en) * 1997-03-11 1998-09-25 Toshiba Corp Amplifier-type solid-state image-pickup unit and operating method therefor
JP3916901B2 (en) 2001-09-05 2007-05-23 独立行政法人科学技術振興機構 Image sensing method and digital CMOS image sensor therefor
JP3863880B2 (en) * 2003-01-10 2006-12-27 松下電器産業株式会社 Solid-state imaging device and camera
JP4311181B2 (en) * 2003-12-05 2009-08-12 ソニー株式会社 Semiconductor device control method, signal processing method, semiconductor device, and electronic apparatus
JP4315032B2 (en) 2004-03-22 2009-08-19 ソニー株式会社 Solid-state imaging device and driving method of solid-state imaging device
JP4497022B2 (en) * 2005-04-26 2010-07-07 ソニー株式会社 Solid-state imaging device, driving method of solid-state imaging device, and imaging device

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