JP2007165425A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2007165425A JP2007165425A JP2005357171A JP2005357171A JP2007165425A JP 2007165425 A JP2007165425 A JP 2007165425A JP 2005357171 A JP2005357171 A JP 2005357171A JP 2005357171 A JP2005357171 A JP 2005357171A JP 2007165425 A JP2007165425 A JP 2007165425A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 229920005989 resin Polymers 0.000 claims abstract description 116
- 239000011347 resin Substances 0.000 claims abstract description 116
- 238000002347 injection Methods 0.000 claims abstract description 13
- 239000007924 injection Substances 0.000 claims abstract description 13
- 238000005452 bending Methods 0.000 abstract description 22
- 238000009413 insulation Methods 0.000 abstract description 8
- 238000000465 moulding Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011888 foil Substances 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000000945 filler Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
【解決手段】パワーチップ5と、ICチップ7と、パワーチップ5を表面に搭載するダイパッド1a及びICチップ7の搭載部を備えた曲げフレーム1と、ダイパッド1aの裏面に一方の面が密着するように設けられた樹脂シート3と、パワーチップ5、ICチップ7、ダイパッド1a及び樹脂シート3を樹脂シート3の他方の面が露出するようにモールドしたモールド樹脂2とを備え、モールド樹脂2の樹脂シート3の露出面と反対側の面に、モールド樹脂2の樹脂注入口と垂直で、かつ、上記絶縁シートと平行な方向に延在する溝10を有するものとする。
【選択図】図7
Description
パワーチップとフレームとはアルミワイヤを用いたワイヤボンディングで接続する。同様に、ICチップとフレームとは、金線ワイヤを用いたワイヤボンディングで接続する。半導体装置は大電流を扱うためパワーチップから熱が発生するため、高放熱性を必要とし同時に高絶縁性を満足しなければならない。
上記モールド樹脂の上記樹脂シートの露出面と反対側の面に、上記樹脂注入口と垂直で、かつ、上記絶縁シートと平行な方向に延在する溝を有するものである。
図1及び図7は、本発明に係る半導体装置の実施の形態1を示す斜視図であり、図2は、図1のI−I断面図、図3は、図1の下面図、図4、図5及び図6は、本実施の形態1の半導体装置の製造工程を示す断面図である。
工程1:図4(a)に示したように、例えば、銅からなる曲げフレーム1を準備する。続いて、曲げフレーム1上の一方にICチップ7を、曲げフレーム1のダイパッド1aの上にパワーチップ5を、それぞれ、はんだや銀ペースト等を用いて固定する。
続いて、トランスファモールド成形法により、例えば、エポキシ樹脂からなるモールド樹脂2を、樹脂封止用金型20に設けられた樹脂注入口12から、樹脂封止用金型20内に充填する。
図8は、本発明に係る半導体装置の実施の形態2を示す平面図である。本実施の形態2の半導体装置においては、溝10の位置が、モールド樹脂2の上方において樹脂シート3の面投影領域と重なり溝10が配置されたモールド樹脂2面の中央よりも、樹脂注入口12に近い位置に配置されている。
図9は、本発明に係る半導体装置の実施の形態3を示す断面図である。本実施の形態3における半導体装置では、溝10が、モールド樹脂2の開口部の幅が溝10の底部の幅より大きなテーパー形状であり、その角度は、曲げフレーム1と垂直な方向に対して15°〜45°傾いた角度であることが望ましい。
図10は、本発明に係る半導体装置の実施の形態4を示す断面図である。本実施の形態4における半導体装置では、溝10の底部がR形状になっている。
図11は、本発明に係る半導体装置の実施の形態5を示す断面図である。本実施の形態5における半導体装置では、溝10の底部に、溝10の幅より小さい直径の固定ピンを挿入した固定ピン穴跡11を一箇所もしくは複数有する。
2 モールド樹脂、3 樹脂シート、4 金属箔、5 パワーチップ、
6 アルミワイヤ、7 ICチップ、8 金線ワイヤ、10 溝、11 固定ピン穴跡、12 樹脂注入口、20 金型、21 上金型、22 下金型、23 凸部、
24 固定ピン、100 半導体装置。
Claims (5)
- 半導体チップと、上記半導体チップを表面に搭載するダイパッドと、上記ダイパッドの裏面に一方の面が密着するように設けられた絶縁性の樹脂シートと、上記半導体チップ、上記ダイパッド及び上記樹脂シートを上記樹脂シートの他方の面が露出するように樹脂を樹脂注入口から注入してモールドしたモールド樹脂とを備え、
上記モールド樹脂の上記樹脂シートの露出面と反対側の面に、上記樹脂注入口と垂直で、かつ、上記絶縁シートと平行な方向に延在する溝を有することを特徴とする半導体装置。 - 上記溝の配置箇所は、上記樹脂シートの面投影領域と重なり上記溝が配置された上記モールド樹脂面の中央よりも、上記樹脂注入口に近い位置であることを特徴とする請求項1記載の半導体装置。
- 上記溝は、上記溝の開口幅が上記溝の底部の幅より大きなテーパ形状に形成されていることを特徴とする請求項1記載の半導体装置。
- 上記溝の底部がR形状であることを請求項1記載の特徴とする半導体装置。
- 上記溝の底部に、上記溝の幅より小さな径の固定ピンを挿入した跡である固定ピン穴跡を有することを特徴とする請求項1記載の半導体装置。
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KR1020060119782A KR100850147B1 (ko) | 2005-12-12 | 2006-11-30 | 반도체 장치 및 반도체 장치의 수지 밀봉용 금형 |
CN2010102844393A CN101980357B (zh) | 2005-12-12 | 2006-12-07 | 半导体器件的制造方法以及半导体器件的树脂密封用模具 |
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