JP2007162091A - Dc plasma cvd apparatus, film deposition method using the same, and wire-shaped cathode for field emission type lamp - Google Patents

Dc plasma cvd apparatus, film deposition method using the same, and wire-shaped cathode for field emission type lamp Download PDF

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JP2007162091A
JP2007162091A JP2005361786A JP2005361786A JP2007162091A JP 2007162091 A JP2007162091 A JP 2007162091A JP 2005361786 A JP2005361786 A JP 2005361786A JP 2005361786 A JP2005361786 A JP 2005361786A JP 2007162091 A JP2007162091 A JP 2007162091A
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conductor wire
film
forming
plasma cvd
cvd apparatus
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JP4868842B2 (en
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Hirooki O
宏興 王
Minami Ko
南 江
Hoki Haba
方紀 羽場
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Dialight Japan Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To deposit a film over the entire surface of a conductive wire with a uniform film thickness. <P>SOLUTION: In a DC plasma CVD apparatus 1, a first flat-plate electrode 10 with a positive electrode side or a grounding electrode side of the DC voltage being connected thereto and a second flat-plate electrode 12 with a negative electrode side of the DC voltage thereof being connected thereto are arranged opposite to each other in a vacuum chamber 2. By introducing a gas for generating a carbon film into inside the vacuum chamber 2 and applying the DC voltage between the flat-plate electrodes 10, 12, plasma is generated between opposing electrode faces of the first and second flat-plate electrodes 10, 12, and a carbon film for emitting electric field electrons is deposited on the surface of the conductive wire 26 arranged on the first flat-plate electrode 10. The DC plasma CVD apparatus has a supporting/driving means 28 for rotationally driving the conductive wire. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、導体ワイヤの表面に直流プラズマにより成膜する直流プラズマＣＶＤ装置および該直流プラズマＣＶＤ装置を用いた成膜方法ならびにフィールドエミッション型ランプ用ワイヤ状陰極に関するものである。   The present invention relates to a direct current plasma CVD apparatus for forming a film on the surface of a conductor wire by direct current plasma, a film forming method using the direct current plasma CVD apparatus, and a wire cathode for a field emission lamp.

図１６ないし図１８を参照して従来の直流プラズマＣＶＤ装置を説明し、次いで、その課題を、図１９を参照して説明する。図１６はその直流プラズマＣＶＤ装置の概略構成を示す図、図１７は図１６の（Ｄ）−（Ｄ）線に沿う断面図、図１８（ａ）（ｂ）（ｃ）は図１６の直流プラズマＣＶＤ装置で表面に炭素膜が成膜されたワイヤ状陰極をフィールドエミッション型ランプに組み込んでその発光特性の説明に供する図である。このフィールドエミッション型ランプには、電界放射型ディスプレイ等のフラットパネルディスプレイ、直管やサークル形状の照明ランプを含む。   A conventional DC plasma CVD apparatus will be described with reference to FIGS. 16 to 18, and the problem will be described with reference to FIG. 16 is a diagram showing a schematic configuration of the DC plasma CVD apparatus, FIG. 17 is a sectional view taken along line (D)-(D) in FIG. 16, and FIGS. 18A, 18B and 18C are DC in FIG. FIG. 3 is a diagram for explaining a light emission characteristic of a wire-type cathode having a carbon film formed on the surface thereof by a plasma CVD apparatus and incorporated in a field emission type lamp. The field emission lamp includes a flat panel display such as a field emission display, a straight tube, and a circle-shaped illumination lamp.

図１６に示す直流プラズマＣＶＤ装置においては、真空チャンバ１０２の内圧が所要の真空度に制御されかつその内部にガス導入口１０４から 炭素膜成膜用ガスが導入されかつガス排気口１０６からそのガスが排気されるようになっている。真空チャンバ１０２の内部には上下一対の第１、第２平板電極１０８，１１０が対向配置されている。上側の第２平板電極１０８に直流電源１１２の負極側電圧が印加される。直流電源１１２の正極側は接地されている。下側の第１の平板電極１１０は接地されている。第１の平板電極１１０の電極面上に成膜対象である導体ワイヤ１１４が搭載されている。これら一対の平板電極１０８，１１０の電極面は平坦な平面視円形になっている。   In the DC plasma CVD apparatus shown in FIG. 16, the internal pressure of the vacuum chamber 102 is controlled to a required degree of vacuum, and a carbon film forming gas is introduced into the gas chamber from the gas inlet 104 and the gas is discharged from the gas outlet 106. Will be exhausted. Inside the vacuum chamber 102, a pair of upper and lower first and second flat plate electrodes 108 and 110 are disposed to face each other. The negative side voltage of the DC power source 112 is applied to the upper second plate electrode 108. The positive electrode side of the DC power source 112 is grounded. The lower first plate electrode 110 is grounded. A conductor wire 114 to be deposited is mounted on the electrode surface of the first flat plate electrode 110. The electrode surfaces of the pair of flat plate electrodes 108 and 110 have a flat circular shape in plan view.

以上の直流プラズマＣＶＤ装置により導体ワイヤ１１４の外周表面には電界電子放出用炭素膜が成膜される。この炭素膜の表面はカーボンナノチューブ、カーボンナノウォール等のｎｍサイズの微小な先端エッジを持つカーボンファイバの構成を備え、電界中においてその先端エッジに電界が集中して電界電子放出することができる。そのため、この炭素膜が成膜された導体ワイヤは、細長いガラス製で内周面に蛍光体と陽極とが形成されている円筒管の略中心に円筒管長手方向に空中架設されてフィールドエミッション型ランプのワイヤ状陰極を構成し、陽極とワイヤ状陰極との間に電圧を印加することにより、炭素膜表面から電子が放出し、この放出した電子が蛍光体に電子衝突して該蛍光体が励起発光する。   The carbon film for field electron emission is formed on the outer peripheral surface of the conductor wire 114 by the above DC plasma CVD apparatus. The surface of the carbon film has a structure of a carbon fiber having a minute tip edge of nm size such as a carbon nanotube or carbon nanowall, and an electric field can be concentrated on the tip edge in an electric field to emit field electrons. For this reason, the conductor wire on which the carbon film is formed is a field emission type that is installed in the air in the longitudinal direction of the cylindrical tube at the approximate center of the cylindrical tube made of elongated glass and having the phosphor and anode formed on the inner peripheral surface. By constituting a wire-like cathode of the lamp and applying a voltage between the anode and the wire-like cathode, electrons are emitted from the surface of the carbon film, and the emitted electrons collide with the phosphor to cause the phosphor to Excited light emission.

この場合、上記直流プラズマＣＶＤ装置で発生するプラズマ１１６は、平面視形状が円形である下側平板電極１１０の電極面上に図１６および図１７で示すようにドーム状に発生している。そのドーム状について詳しく考察する。プラズマ中で電子は加速されプラズマ中に含まれる炭素膜成膜用ガス（炭素膜成膜用ガスが例えば炭化水素ガスと水素ガスとの混合ガスであれば原料ガスである炭化水素ガス）を分解して導体ワイヤ１１４の表面に炭素膜が成膜される。そして、上記の場合、電極面上に発生したプラズマ１１６の電極面からの存在高さは中央で最も高く、その電極面中央から電極面周縁にかけて放物線を描くようにその存在高さが低くなり電極面周縁で存在高さが最も低くなっている。炭化水素の分解に寄与する化学種は電子以外にもイオン等があるが電子がその分解に大きく寄与する。すなわち、プラズマ１１６の断面形状としてはその存在高さをなぞる線によりドーム状ないしは放物線状になっている。しかもそのプラズマ１１６のドーム形状も安定化しにくい。そのためプラズマ１１６の電極面中央ではその周縁よりも、電子が原料ガスである炭化水素ガスと衝突する頻度が高くなること、温度分布も変化する等により、炭化水素の分解量が多くなり導体ワイヤ１１４の表面に成膜（堆積）される炭素膜の膜厚が変化すると考えられる。   In this case, the plasma 116 generated by the DC plasma CVD apparatus is generated in a dome shape as shown in FIGS. 16 and 17 on the electrode surface of the lower plate electrode 110 having a circular shape in plan view. Consider the dome shape in detail. Electrons are accelerated in the plasma, and the carbon film deposition gas contained in the plasma is decomposed (if the carbon film deposition gas is a mixed gas of hydrocarbon gas and hydrogen gas, for example, a hydrocarbon gas that is a raw material gas). Then, a carbon film is formed on the surface of the conductor wire 114. In the above case, the existence height of the plasma 116 generated on the electrode surface from the electrode surface is the highest at the center, and the existence height is lowered so as to draw a parabola from the center of the electrode surface to the periphery of the electrode surface. The existence height is the lowest at the periphery of the surface. Chemical species that contribute to the decomposition of hydrocarbons include ions other than electrons, but electrons contribute greatly to the decomposition. That is, the cross-sectional shape of the plasma 116 is a dome shape or a parabolic shape by a line tracing its existence height. Moreover, the dome shape of the plasma 116 is difficult to stabilize. Therefore, at the center of the electrode surface of the plasma 116, the frequency of collision of electrons with the hydrocarbon gas, which is the raw material gas, is higher than that at the periphery, and the amount of hydrocarbon decomposition increases due to changes in the temperature distribution. It is considered that the thickness of the carbon film formed (deposited) on the surface changes.

そのため、そのプラズマ１１６により導体ワイヤ１１４の表面に炭素膜の膜厚はその長手方向にも円周方向にも不均一となり、導体ワイヤ１１４の表面には長手方向に不均一な膜厚で成膜されるだけではなく、円周方向においても膜厚不均一でかつ膜質も低品質な炭素膜が成膜されてしまう。   Therefore, the plasma 116 makes the film thickness of the carbon film on the surface of the conductor wire 114 non-uniform in both the longitudinal direction and the circumferential direction, and forms a film with a non-uniform film thickness in the longitudinal direction on the surface of the conductor wire 114. In addition, a carbon film having a non-uniform film thickness and a low film quality is formed even in the circumferential direction.

したがって、図１８（ａ）（ｂ）（ｃ）を参照して、このように炭素膜が導体ワイヤ１１４の長手方向にも円周方向にも膜厚不均一かつ低品質に成膜されているワイヤ状陰極１２０をフラットパネル１２２，２４内部に蛍光体１２６付きの陽極１２８と対向配置しこれらの間に電界を印加してワイヤ状陰極１２０から電界放射により電子を放出させた場合、電子の放出量を矢印の大きさで電子放出の向きを矢印の向きで表した場合、図１８（ａ）（ｂ）（ｃ）で示すように電子放出量がワイヤ状陰極１２０の円周方向で不均一になっている。この場合、ワイヤ状陰極１２０の長手方向においても図示は略しているが電子放出量は不均一になっている。そのため、ワイヤ状陰極１２０から放出された電子の衝突で励起発光される蛍光体１２６の発光輝度は不均一となり、フィールドエミッション型ランプの発光特性が悪くなっている。   Therefore, referring to FIGS. 18A, 18B, and 18C, the carbon film is thus formed with a non-uniform film thickness and low quality both in the longitudinal direction and in the circumferential direction of the conductor wire 114. When the wire-like cathode 120 is disposed inside the flat panels 122 and 24 so as to face the anode 128 with the phosphor 126 and an electric field is applied between them, electrons are emitted from the wire-like cathode 120 by field emission. When the amount is indicated by the size of the arrow and the direction of electron emission is indicated by the direction of the arrow, the amount of electron emission is not uniform in the circumferential direction of the wire-like cathode 120 as shown in FIGS. It has become. In this case, although not shown in the longitudinal direction of the wire-like cathode 120, the electron emission amount is not uniform. Therefore, the emission luminance of the phosphor 126 excited and emitted by the collision of electrons emitted from the wire-like cathode 120 becomes uneven, and the light emission characteristics of the field emission lamp are deteriorated.

そこで、ワイヤ状陰極１２０の長手方向および円周方向に炭素膜が均一に成膜されるようにする必要があるが、このような成膜は図１６に示す直流プラズマＣＶＤ装置では困難である。   Therefore, it is necessary to form a carbon film uniformly in the longitudinal direction and the circumferential direction of the wire-like cathode 120, but such film formation is difficult with the DC plasma CVD apparatus shown in FIG.

ところで、導体ワイヤ１１４の表面に均等に炭素膜を成膜する場合、上記直流プラズマＣＶＤ装置では、下側平板電極１１０上に導体ワイヤ１１４を配置して成膜するので、導体ワイヤ１１４の全表面のうち上半分表面（円周方向最大で１２０度範囲の表面）にのみ炭素膜を成膜することができず、下半分表面については炭素膜を成膜することができなかったため、炭素膜の成膜領域と非成膜領域とが存在するようになる。そのため、導体ワイヤ１１４の表面に炭素膜を成膜して製作したワイヤ状陰極１２０を用いてフィールドエミッション型ランプに組み込んだ場合、次の課題がある。   By the way, when the carbon film is uniformly formed on the surface of the conductor wire 114, the DC plasma CVD apparatus forms the film by arranging the conductor wire 114 on the lower flat plate electrode 110. The carbon film could not be formed only on the upper half surface (the surface in the circumferential direction maximum 120 degrees range), and the carbon film could not be formed on the lower half surface. A film formation region and a non-film formation region exist. Therefore, when the wire-like cathode 120 manufactured by forming a carbon film on the surface of the conductor wire 114 is incorporated into a field emission lamp, there is the following problem.

この課題を、図１９を参照して、説明する。図１９（ａ）で示すように、ワイヤ状陰極１２０と、その電界電子放出範囲θと、陽極１２８とを示す。このワイヤ状陰極１２０は、図１９（ｂ）で示すように導電性ワイヤ１１４の表面に炭素膜１３２が成膜されている。この炭素膜１３２の成膜領域をＸ、成膜されていない領域（非成膜領域）をＹとする。そして、このワイヤ状陰極１２０が図１９（ｃ）で示すように成膜領域Ｘを陽極１２８に向けて配置している場合では陽極１２８に所望の電界電子放出を行うことができ、図１９（ｄ）で示すように非成膜領域Ｙを陽極１２８に向けて配置している場合では陽極１２８に対して所望の電界電子放出を行うことができなくなる。このようなワイヤ状陰極１２０を用いてフィールドエミッション型ランプを製作する場合、常に、ワイヤ状陰極１２０を、その成膜領域Ｘを陽極１２８に向けて、配置する必要があるが、このような配置作業は困難であり、量産性を著しく低下させてしまう。そこでこのようなワイヤ状陰極１２０の配置に方向性を無くしてその量産性を向上するには図１９（ｅ）で示すように導体ワイヤ１１４の表面全周に炭素膜１３２を均等に成膜することが必要である。   This problem will be described with reference to FIG. As shown in FIG. 19A, a wire-like cathode 120, its field electron emission range θ, and an anode 128 are shown. In this wire-like cathode 120, a carbon film 132 is formed on the surface of the conductive wire 114 as shown in FIG. The film formation region of the carbon film 132 is X, and the non-film formation region (non-film formation region) is Y. When the wire-shaped cathode 120 is arranged with the film-forming region X facing the anode 128 as shown in FIG. 19C, desired field electron emission can be performed on the anode 128, as shown in FIG. In the case where the non-film-forming region Y is arranged toward the anode 128 as shown in d), it becomes impossible to perform desired field electron emission to the anode 128. When manufacturing a field emission type lamp using such a wire-like cathode 120, it is necessary to always arrange the wire-like cathode 120 with its film formation region X facing the anode 128. The operation is difficult, and the mass productivity is significantly reduced. Therefore, in order to improve the mass productivity by eliminating the directionality of the arrangement of the wire-like cathode 120, the carbon film 132 is uniformly formed on the entire surface of the conductor wire 114 as shown in FIG. It is necessary.

しかしながら、従来の直流プラズマＣＶＤ装置では、第１の課題として、プラズマ１１６の断面形状の不均一性により、導体ワイヤ１１４の表面に均等に炭素膜１３２を成膜することができないこと、第２の課題として、導体ワイヤ１１４の表面のうち一定範囲表面に均等に炭素膜１３２を成膜することが可能になったとしても、導体ワイヤ１１４の全周に炭素膜１３２を均等に成膜することができないので、上記した量産性の低下という課題がある。
特開２００４−２１６２４６号公報 However, in the conventional DC plasma CVD apparatus, the first problem is that the carbon film 132 cannot be uniformly formed on the surface of the conductor wire 114 due to the non-uniformity of the cross-sectional shape of the plasma 116, As a problem, even if the carbon film 132 can be uniformly formed on the surface of a certain range among the surfaces of the conductor wire 114, the carbon film 132 can be uniformly formed on the entire circumference of the conductor wire 114. Since this is not possible, there is a problem that the mass productivity is reduced as described above.
JP 2004-216246 A

したがって、本発明により解決すべき課題は、導体ワイヤの表面全周に炭素膜を膜厚均一に成膜することができるようにし、これによって炭素膜付き導体ワイヤをワイヤ状陰極としてフィールドエミッション型ランプに組み込む場合に、その量産性を大きく向上可能にすることである。   Therefore, the problem to be solved by the present invention is that a carbon film can be uniformly formed on the entire circumference of the surface of the conductor wire, and thereby the field emission lamp with the carbon film-containing conductor wire as a wire-like cathode. It is possible to greatly improve the mass productivity when it is incorporated.

（１）本発明第１に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、両平板電極間に配置した導体ワイヤを上記成膜中に回転させることが可能になっていることを特徴とするものである。   (1) The DC plasma CVD apparatus according to the first aspect of the present invention generates a film-forming plasma by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside a vacuum chamber. By being generated, it is a direct current plasma CVD apparatus for forming a film on the surface of a conductor wire disposed between both plate electrodes, and the conductor wire disposed between both plate electrodes can be rotated during the film formation. It is characterized by that.

成膜用プラズマにおいては両平板電極間に直流電源から成膜用正負電圧を印加し、成膜用ガスを導入して成膜用のプラズマを発生させるようになっているので、成膜対象が断面円形ないしはほぼ円形である導体ワイヤでは表面全周に均等な膜厚で成膜することができない。   In the film forming plasma, a film forming plasma is generated by applying a film forming positive and negative voltage from a DC power source between both plate electrodes and introducing a film forming gas. A conductor wire having a circular or substantially circular cross section cannot be formed with a uniform film thickness over the entire surface.

本発明第１では、このように断面円形である導体ワイヤであっても、導体ワイヤを上記成膜中に回転させるのでその表面全周に均等な膜厚に成膜することができるようになった。   In the first aspect of the present invention, even with a conductor wire having a circular cross section, the conductor wire is rotated during the film formation, so that a uniform film thickness can be formed on the entire surface. It was.

さらに、本発明第１では、導体ワイヤの長手方向かつ円周方向いずれにも均等に成膜することができるので、成膜用ガスとして炭素膜成膜用ガスを用いて導体ワイヤの表面に炭素膜を成膜する場合、長手方向、円周方向共に均等な膜厚で炭素膜が成膜されたワイヤ状陰極を得ることができるので、ワイヤ状陰極を組み込むフィールドエミッション型ランプの量産性を大きく向上することができる。   Furthermore, in the first aspect of the present invention, since the film can be formed uniformly both in the longitudinal direction and in the circumferential direction of the conductor wire, carbon film forming gas is used as the film forming gas, and carbon is formed on the surface of the conductor wire. When forming a film, it is possible to obtain a wire-like cathode in which a carbon film is formed with a uniform film thickness in both the longitudinal direction and the circumferential direction. This increases the mass productivity of a field emission lamp incorporating a wire-like cathode. Can be improved.

なお、導体ワイヤは断面円形に限定されるものではなく、断面楕円形、断面角形(多角形)、等でもよく、また、その表面に凹凸等があってもよい。   The conductor wire is not limited to a circular cross section, and may be an oval cross section, a square cross section (polygon), or the like, and the surface thereof may be uneven.

なお、真空チャンバの「真空」とはＪＩＳで定義されるものであり、大気圧より低い圧力の気体で満たされた空間内の状態と規定することができる。   The “vacuum” of the vacuum chamber is defined by JIS and can be defined as a state in a space filled with a gas having a pressure lower than atmospheric pressure.

なお、上記「一対の平板電極」とは、２つの平板電極に限定されるものではなく、例えば、一方の平板電極を単数、他方の平板電極を複数にしてもよく、また、２つの平板電極で１対とする平板電極対を複数対有する場合も含むことができる意である。   The “pair of plate electrodes” is not limited to two plate electrodes. For example, one plate electrode may be singular and the other plate electrode may be plural, or two plate electrodes. It is possible to include a case where a plurality of pairs of flat plate electrodes are used.

なお、上記「導体ワイヤ」とは、内部が導体、絶縁体、半導体であってもよく、少なくとも表面が導電性を有するワイヤであるとよい。   The “conductor wire” may be a conductor, an insulator, or a semiconductor inside, and at least the surface may be a conductive wire.

なお、上記「ワイヤ」とは、線状のものであり、その名称に限定されるものではない。もちろん、その長手方向に一定の直径を有する必要はない。   The “wire” is linear and is not limited to its name. Of course, it is not necessary to have a constant diameter in the longitudinal direction.

なお、「回転」とは、導体ワイヤが自転する回転のことである。また、その自転速度は一定であることが好ましい。   “Rotation” refers to rotation in which the conductor wire rotates. Further, the rotation speed is preferably constant.

なお、「平板電極」とは、電極面を除いて、その電極横断面が正方形、長方形、菱形、等、何でもよく、また、電極側面は直線状でも曲線状でもよい。したがって、平板電極は、その横断面形状の解釈に関して「平板」という用語により、いわゆる「平板」だけに限定されるよう狭く解釈されるべきではない。   The “plate electrode” may be anything such as a square, rectangle, rhombus, etc., except for the electrode surface, and the electrode side surface may be linear or curved. Therefore, the flat plate electrode should not be narrowly interpreted to be limited to the so-called “flat plate” by the term “flat plate” with respect to the interpretation of its cross-sectional shape.

（２）本発明第２に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、両平板電極間に導体ワイヤを支持するとともにこの支持した導体ワイヤを上記成膜中に回転させる支持／駆動手段を備えることを特徴とするものである。   (2) In the DC plasma CVD apparatus according to the second aspect of the present invention, a film-forming plasma is generated by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside a vacuum chamber. A DC plasma CVD apparatus for forming a film on the surface of a conductor wire disposed between both plate electrodes by generating the conductor wire between the two plate electrodes and supporting the supported conductor wire during the film formation. It is characterized by comprising a supporting / driving means for rotating.

本発明第２によれば、支持／駆動手段を備えるので、上記（１）の理由により、導体ワイヤの表面全周に均等に成膜することができる。   According to the second aspect of the present invention, since the supporting / driving means is provided, the film can be uniformly formed on the entire surface of the conductor wire for the reason (1).

（３）本発明第３に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、導体ワイヤを直流電源の正電極側に接続される平板電極の電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させる支持／駆動手段を備えることを特徴とするものである。   (3) A DC plasma CVD apparatus according to the third aspect of the present invention generates a film-forming plasma by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside a vacuum chamber. A DC plasma CVD apparatus for forming a film on the surface of a conductor wire disposed between both plate electrodes by generating the conductor wire close to the electrode surface of the plate electrode connected to the positive electrode side of the DC power supply It is characterized by comprising support / drive means for supporting and rotating in a tensioned state so as not to sag at the position.

上記「正電極側に接続される平板電極」とは直流電源の正電極を接地し、導体ワイヤが近接配置される上記平板電極を接地する場合に、その接地される平板電極を含む。この意味は以下も同様である。   The “plate electrode connected to the positive electrode side” includes the plate electrode that is grounded when the positive electrode of the DC power source is grounded and the plate electrode on which the conductor wire is disposed is grounded. This also applies to the following.

本発明第３によれば、導体ワイヤを成膜中にたるまないよう支持するので細長い導体ワイヤでもその表面全周に均等な膜厚に成膜することができる。   According to the third aspect of the present invention, since the conductor wire is supported so as not to sag during film formation, even an elongated conductor wire can be formed with a uniform film thickness on the entire surface.

（４）本発明第４に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、直流電源の正電極側に接続される平板電極の電極面を平面視で矩形形状の電極面（第１電極面）となし、導体ワイヤを上記第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転させる支持／駆動手段を備えることを特徴とするものである。   (4) In the DC plasma CVD apparatus according to the fourth aspect of the present invention, a film-forming plasma is generated by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside a vacuum chamber. A DC plasma CVD apparatus for forming a film on the surface of a conductor wire disposed between both plate electrodes by generating a rectangular electrode surface in plan view, the electrode surface of the plate electrode connected to the positive electrode side of the DC power supply It comprises an electrode surface (first electrode surface), and comprises support / drive means for supporting and rotating the conductor wire in a tensioned state so as not to sag at a position close to the first electrode surface. Is.

本発明第４によれば、第１電極面が平面視矩形形状を有するので、成膜用のプラズマを第１電極面の全体にかけて均等となる断面形状で発生させることが可能となり、導体ワイヤの表面全体にかけてその上方空間で発生するプラズマ中における電子が成膜用ガスと衝突する頻度が均等化される結果、導体ワイヤ表面に均等な膜厚で成膜することができるようになる。そして本発明第４によれば、さらに、支持／駆動手段により、導体ワイヤを第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させることができるので、導体ワイヤの表面全周に、従来ではなし得なかった均等な成膜を施すことができる。   According to the fourth aspect of the present invention, since the first electrode surface has a rectangular shape in plan view, it becomes possible to generate plasma for film formation with a uniform cross-sectional shape over the entire first electrode surface, and the conductor wire As a result of equalizing the frequency with which electrons in the plasma generated in the upper space collide with the film-forming gas over the entire surface, it becomes possible to form a film with a uniform film thickness on the surface of the conductor wire. According to the fourth aspect of the present invention, the support / drive means can further support and rotate the conductor wire in a tensioned state so as not to sag at a position close to the first electrode surface. Uniform film formation that could not be achieved in the past can be performed on the entire surface of the conductor wire.

（５）本発明第５に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に炭素膜成膜用ガスを導入し、かつ、対向する一対の平板電極間に成膜用直流電圧を印加することにより成膜用プラズマを発生させて、両平板電極間に配置した導体ワイヤの表面に炭素膜を成膜する直流プラズマＣＶＤ装置であって、少なくとも上記直流電源の正電極側に接続される平板電極の電極面を平面視で矩形形状の電極面（第１電極面）となし、導体ワイヤを上記第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させる支持／駆動手段を備えることを特徴とするものである。   (5) A DC plasma CVD apparatus according to the fifth aspect of the present invention introduces a carbon film forming gas into a vacuum chamber, and applies a DC voltage for film formation between a pair of opposed flat plate electrodes. A DC plasma CVD apparatus for generating a film-forming plasma and forming a carbon film on the surface of a conductor wire disposed between both plate electrodes, comprising at least a plate electrode connected to the positive electrode side of the DC power source The electrode surface is a rectangular electrode surface (first electrode surface) in plan view, and the conductor wire is supported and rotated in a tensioned state so as not to sag at a position close to the first electrode surface. / A drive means is provided.

本発明第５によれば、少なくとも上記直流電源の正電極側（接地電極側含む）の平板電極の電極面を平面視で矩形形状の電極面（第１電極面）となすので、成膜用のプラズマを第１電極面の全体にかけて均等となる断面形状で発生させることが可能となり、導体ワイヤの表面全体にかけてその上方空間で発生するプラズマ中における電子が炭素膜成膜用ガスと衝突する頻度を均等化する結果、導体ワイヤ表面に均等な膜厚で炭素膜を成膜することができるようになる。   According to the fifth aspect of the present invention, at least the electrode surface of the flat electrode on the positive electrode side (including the ground electrode side) of the DC power source is a rectangular electrode surface (first electrode surface) in plan view. It is possible to generate a plasma having a uniform cross-sectional shape over the entire surface of the first electrode, and the frequency in which electrons in the plasma generated in the space above the entire surface of the conductor wire collide with the carbon film forming gas. As a result, the carbon film can be formed with a uniform film thickness on the surface of the conductor wire.

そして本発明第５によれば、さらに、支持／駆動手段により、導体ワイヤを第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させることができるので、断面が円形である導体ワイヤであってもその表面全周に均等な膜厚に炭素膜を成膜することができる。   And according to the fifth aspect of the present invention, the support / drive means can further support and rotate the conductor wire in a tensioned state so as not to sag in the vicinity of the first electrode surface. Even in the case of a conductor wire having a circular cross section, a carbon film can be formed in a uniform film thickness on the entire surface.

（６）本発明第６に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に炭素膜成膜用ガスを導入し、かつ、対向する一対の平板電極間に成膜用直流電圧を印加することにより成膜用プラズマを発生させて、両平板電極間に配置した導体ワイヤの表面に炭素膜を成膜する直流プラズマＣＶＤ装置であって、直流電源の正電極側に接続される平板電極が平面視で長方形形状をなす電極面（第１電極面）を備え、導体ワイヤに、上記成膜に際して、上記第１電極面上に近接した位置でかつこの電極面の長手方向に沿ってテンションをかけた状態で支持して回転させる支持／駆動手段を備えることを特徴とするものである。  (6) A DC plasma CVD apparatus according to the sixth aspect of the present invention introduces a carbon film-forming gas into a vacuum chamber and applies a film-forming DC voltage between a pair of opposed plate electrodes. A DC plasma CVD apparatus for generating a film-forming plasma and forming a carbon film on the surface of a conductor wire disposed between both plate electrodes, wherein the plate electrode connected to the positive electrode side of the DC power supply is viewed in plan view. A rectangular electrode surface (first electrode surface) is provided, and a tension is applied to the conductor wire at a position close to the first electrode surface and along the longitudinal direction of the electrode surface during the film formation. It is characterized by comprising support / drive means for supporting and rotating in a state.

本発明第６によれば、直流電源の正電極側ないしは接地電極側に接続する平板電極が平面視で長方形形状をなす第１電極面を備えるので、成膜用のプラズマを第１電極面の全体にかけて均等となる断面形状で発生させることが可能となり、導体ワイヤの表面全体にかけてその上方空間で発生するプラズマ中における電子が炭素膜成膜用ガス分子と衝突する頻度が均等化される結果、導体ワイヤ表面に均等な膜厚で炭素膜を成膜することができるようになる。   According to the sixth aspect of the present invention, the flat plate electrode connected to the positive electrode side or the ground electrode side of the DC power supply includes the first electrode surface having a rectangular shape in plan view. As a result, it is possible to generate a uniform cross-sectional shape over the entire surface, and the frequency with which electrons in the plasma generated in the space above the entire surface of the conductor wire collide with the carbon film forming gas molecules is equalized. A carbon film can be formed on the surface of the conductor wire with a uniform film thickness.

そして本発明第６によれば、さらに、支持／駆動手段により、導体ワイヤを第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させることができるので、導体ワイヤの表面全周に、従来ではなし得なかった均等な成膜を施すことができる。   According to the sixth aspect of the present invention, the support / drive means can further support and rotate the conductor wire in a tensioned state so as not to sag at a position close to the first electrode surface. Uniform film formation that could not be achieved in the past can be performed on the entire surface of the conductor wire.

特に、本発明第６では、第１電極面が導体ワイヤの配置長さ方向に長辺を有する長方形の形状を有する態様であるので、導体ワイヤとして直径が細く長さが長い導体ワイヤの表面全体に均等な膜厚で炭素膜を成膜することができるようになる。   In particular, in the sixth aspect of the present invention, since the first electrode surface has a rectangular shape having a long side in the arrangement length direction of the conductor wire, the entire surface of the conductor wire having a small diameter and a long length as the conductor wire. It becomes possible to form a carbon film with a uniform film thickness.

（７）本発明第７に係る直流プラズマＣＶＤ装置は、真空チャンバの内部に炭素膜成膜用ガスを導入し、かつ、対向する一対の平板電極間に成膜用直流電圧を印加することにより成膜用プラズマを発生させて、両平板電極間に配置した導体ワイヤの表面に炭素膜を成膜する直流プラズマＣＶＤ装置であって、両平板電極を共に同形状の長方形形状の電極面となし、導体ワイヤを、上記成膜に際して両平板電極のうち直流電源の正電極側に接続される平板電極の電極面（第１電極面）上に近接した位置でたるまないようテンションをかけた状態で上記第１電極面の長手方向に沿って支持して回転させる支持／駆動手段を備えることを特徴とするものである。  (7) A DC plasma CVD apparatus according to the seventh aspect of the present invention introduces a carbon film forming gas into a vacuum chamber and applies a DC voltage for film formation between a pair of opposed flat plate electrodes. A direct current plasma CVD apparatus that generates a film-forming plasma and forms a carbon film on the surface of a conductor wire disposed between both flat plate electrodes, both flat plate electrodes having the same rectangular electrode surface The conductor wire is tensioned so that it does not sag at the position close to the electrode surface (first electrode surface) of the plate electrode connected to the positive electrode side of the DC power source among the two plate electrodes during the film formation. Supporting / driving means for supporting and rotating along the longitudinal direction of the first electrode surface is provided.

本発明第７によれば、両平板電極が共に同形状の長方形形状の電極面を有するので、成膜用のプラズマを第１電極面の全体にかけて均等となる断面形状で発生させることが可能となり、導体ワイヤの表面全体にかけてその上方空間で発生するプラズマ中における電子が炭素膜成膜用ガス分子と衝突する頻度が均等化される結果、導体ワイヤ表面に均等な膜厚で炭素膜を成膜することができるようになる。   According to the seventh aspect of the present invention, since both plate electrodes have the same rectangular electrode surface, it is possible to generate plasma for film formation with a uniform cross-sectional shape over the entire first electrode surface. As a result of the equalization of the frequency with which electrons in the plasma generated in the space above the entire surface of the conductor wire collide with the carbon film forming gas molecules, a carbon film is formed with a uniform film thickness on the surface of the conductor wire. Will be able to.

そして本発明第７によれば、さらに、支持／駆動手段により、導体ワイヤを第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させることができるので、導体ワイヤの表面全周に、従来ではなし得なかった均等な成膜を施すことができる。   According to the seventh aspect of the present invention, further, the support / drive means can support and rotate the conductor wire in a tensioned state so as not to sag in the vicinity of the first electrode surface. Uniform film formation that could not be achieved in the past can be performed on the entire surface of the conductor wire.

（８）本発明第１ないし第７において、好ましくは、上記支持／駆動手段が、導体ワイヤの両端それぞれを支持する第１支持部と第２支持部とを備え、両支持部の配置間隔が平板電極の大きさに合わせて調整可能になっていることである。こうした場合、長さが長短異なる導体ワイヤに対してその表面に炭素膜を成膜することができる。   (8) In the first to seventh aspects of the present invention, preferably, the support / driving means includes a first support portion and a second support portion that support both ends of the conductor wire, and an arrangement interval between the both support portions is set. It is possible to adjust according to the size of the plate electrode. In such a case, a carbon film can be formed on the surface of conductor wires having different lengths.

（９）本発明第１ないし第７において、好ましくは、真空チャンバ内部に平板電極の配置空間を上記支持／駆動手段の少なくとも一部の配置空間から隔離する隔離壁を設けることである。こうした場合、支持／駆動手段の一部の要素に汚染されずに済み、導体ワイヤの表面に炭素膜を高品質に成膜することができるようになる。   (9) In the first to seventh aspects of the present invention, preferably, an isolation wall is provided in the vacuum chamber to isolate the arrangement space of the plate electrode from at least a part of the arrangement space of the support / drive means. In such a case, it is not necessary to contaminate some elements of the support / drive means, and a carbon film can be formed with high quality on the surface of the conductor wire.

（１０）好ましくは、平板電極の電極面形状が、長方形形状であり、より好ましくは、短辺が１０−３０ｍｍ、長辺が１２０−２２０ｍｍの長方形形状である。この態様では導体ワイヤの長手方向寸法と直径方向寸法と対応することができ、従来ではなし得なかった導体ワイヤの長手方向全体に均等な膜厚で炭素膜を成膜することを可能にすることができる。   (10) Preferably, the electrode surface shape of the plate electrode is a rectangular shape, more preferably a rectangular shape having a short side of 10-30 mm and a long side of 120-220 mm. In this aspect, it is possible to correspond to the longitudinal dimension and the diameter dimension of the conductor wire, and it is possible to form a carbon film with a uniform film thickness over the entire longitudinal direction of the conductor wire, which could not be achieved conventionally. Can do.

（１１）本発明の直流プラズマＣＶＤ装置を用いて導体ワイヤの表面に炭素膜を成膜することができる。例えば、上記直流プラズマＣＶＤ装置の真空チャンバ内の平板電極上に支持／駆動手段により導体ワイヤを配置し、真空チャンバの内圧を１０ないし１００００Ｐａ、直流電源の電圧を１００ないし２０００Ｖに設定し、両平板電極間に該直流電源から電圧を印加し、かつ真空チャンバ内に炭素膜成膜用ガスとして例えば炭化水素ガスと水素ガスとの混合ガスを導入して両平板電極間に水素プラズマを発生させて導体ワイヤの表面に炭素膜を成膜することができる。   (11) A carbon film can be formed on the surface of the conductor wire using the DC plasma CVD apparatus of the present invention. For example, a conductor wire is arranged on a plate electrode in a vacuum chamber of the DC plasma CVD apparatus by supporting / driving means, an internal pressure of the vacuum chamber is set to 10 to 10,000 Pa, a DC power source voltage is set to 100 to 2000 V, and both plates are set. A voltage is applied from the DC power supply between the electrodes, and a hydrogen plasma is generated between both plate electrodes by introducing, for example, a mixed gas of hydrocarbon gas and hydrogen gas as a carbon film forming gas into the vacuum chamber. A carbon film can be formed on the surface of the conductor wire.

上記において、真空チャンバの圧力は、より好ましくは１０００−２０００Ｐａ、直流電源の電圧は、より好ましくは３００ないし１０００Ｖ、より好ましくは５００−８００Ｖである。この圧力と電圧とを適宜に設定することにより基板表面に炭素膜を成膜することができる。   In the above, the pressure of the vacuum chamber is more preferably 1000 to 2000 Pa, and the voltage of the direct current power source is more preferably 300 to 1000 V, more preferably 500 to 800 V. A carbon film can be formed on the substrate surface by appropriately setting the pressure and voltage.

上記成膜方法においては、両平板電極の電極面を互いに同寸法同形状の平坦でかつ平面視矩形をなす形状とすると、平板電極の電極面上にその存在高さをなぞる線が当該電極面にほぼ平行となる矩形形状で成膜用のプラズマが発生する結果、このプラズマ中の電子により基板表面に成膜される炭素膜の膜厚を導体ワイヤ表面により均等に成膜することができる。
（１２）上記（１１）で炭素膜が成膜されたフィールドエミッション型ランプ用ワイヤ状陰極においては、ワイヤ状陰極としてフィールドエミッション型ランプに組み込む場合に、その配置に方向性が無くなるので、フィールドエミッション型ランプの量産性の向上に大きく寄与することができるようになる。 In the above film forming method, if the electrode surfaces of both plate electrodes are flat and of the same size and shape and form a rectangular shape in plan view, a line tracing the existence height on the electrode surface of the plate electrode is the electrode surface. As a result of the generation of the plasma for film formation in a rectangular shape that is substantially parallel to the film, the carbon film formed on the substrate surface by the electrons in the plasma can be formed evenly on the surface of the conductor wire.
(12) The field emission lamp wire-like cathode having the carbon film formed in the above (11) has no directionality in the arrangement when incorporated into the field emission lamp as the wire cathode, so that field emission is eliminated. This can greatly contribute to the improvement of the mass productivity of the mold lamp.

本発明によれば、導体ワイヤの表面全体に均等な膜厚で成膜することができる。   According to the present invention, it is possible to form a film with a uniform film thickness on the entire surface of the conductor wire.

以下、添付した図面を参照して、本発明の実施の形態に係る直流プラズマＣＶＤ装置を説明する。   Hereinafter, a DC plasma CVD apparatus according to an embodiment of the present invention will be described with reference to the accompanying drawings.

まず、図１を参照して実施の形態１の直流プラズマＣＶＤ装置の概略構成を説明する。この直流プラズマＣＶＤ装置１は、横置き型であり、導電性または絶縁性の真空チャンバ２を備える。真空チャンバ２にはガス導入部４とガス排出部６とが設けられている。   First, a schematic configuration of the DC plasma CVD apparatus according to the first embodiment will be described with reference to FIG. The DC plasma CVD apparatus 1 is a horizontal type and includes a conductive or insulating vacuum chamber 2. The vacuum chamber 2 is provided with a gas introduction part 4 and a gas discharge part 6.

ガス導入部４は、真空チャンバ２の天井面２ａの開孔２ｂを貫通して取り付けられた直管状のガス導入パイプ４ａと、このガス導入パイプ４ａに装着されかつ下面側に多数のガス通孔４ｂを有する短円筒状のガス導入パイプ４ｃとを有しそのガス通孔４ｂからガスをシャワー状に真空チャンバ２内に導入することができるようになっている。   The gas introduction unit 4 includes a straight gas introduction pipe 4a attached through the opening 2b of the ceiling surface 2a of the vacuum chamber 2, and a plurality of gas passages attached to the gas introduction pipe 4a and provided on the lower surface side. It has a short cylindrical gas introduction pipe 4c having 4b, and gas can be introduced into the vacuum chamber 2 in a shower form from the gas through hole 4b.

ガス排気部６は、真空チャンバ２の底面２ｃに設置され多数のガス通孔６ａを有するリング状のガス排気パイプ６ｂと、一端側が真空チャンバ２の排気孔２ｄを介して上記ガス排気パイプ６ｂに接続され、かつ、他端側が真空チャンバ２外部に延びて配置された直管状のガス排気パイプ６ｃとからなり、図示略の真空引きポンプにより真空チャンバ２内のガスを真空チャンバ２外に排気することができるようになっている。   The gas exhaust section 6 is installed on the bottom surface 2c of the vacuum chamber 2 and has a ring-shaped gas exhaust pipe 6b having a large number of gas passage holes 6a, and one end side is connected to the gas exhaust pipe 6b via the exhaust holes 2d of the vacuum chamber 2. A gas exhaust pipe 6c that is connected and has the other end extending outside the vacuum chamber 2 is disposed, and the gas in the vacuum chamber 2 is exhausted out of the vacuum chamber 2 by a vacuum pump (not shown). Be able to.

上記ガスは、炭素膜成膜用ガスとして、例えば原料ガスである例えば炭化水素ガスとプラズマ発生用ガスである例えば水素ガスとの混合ガスを用いることができる。原料ガスやプラズマ発生用ガスはこれに限定されるものではない。水素ガスに代えて窒素ガス、アルゴンガスを用いることができる。   As the gas for forming the carbon film, for example, a mixed gas of, for example, a raw material gas such as a hydrocarbon gas and a plasma generating gas such as hydrogen gas can be used as the gas. The source gas and the plasma generating gas are not limited to these. Instead of hydrogen gas, nitrogen gas or argon gas can be used.

真空チャンバ２の内圧は１０Ｐａから１００００Ｐａの範囲となるようこれにガス導入パイプ４ａに配備されたガス導入制御弁４ｄや、ガス排気パイプ６ｃに配備されたガス排気制御弁６ｄの開度制御により制御される。   The internal pressure of the vacuum chamber 2 is controlled by opening control of the gas introduction control valve 4d provided in the gas introduction pipe 4a and the gas exhaust control valve 6d provided in the gas exhaust pipe 6c so that the internal pressure is in the range of 10 Pa to 10,000 Pa. Is done.

真空チャンバ２の底面２ｃ上には導電性の支持台８が設置されている。この支持台８上に第１平板電極１０が設置されている。第１平板電極１０の上方には第１平板電極１０から一定距離を隔てて第２平板電極１２が配置されている。   On the bottom surface 2c of the vacuum chamber 2, a conductive support base 8 is installed. A first plate electrode 10 is installed on the support base 8. Above the first plate electrode 10, a second plate electrode 12 is disposed at a certain distance from the first plate electrode 10.

真空チャンバ２の天井面２ａに支持部材１４ａ，１４ｂが吊り下げられている。支持部材１４ａ，１４ｂそれぞれの折曲げ延長部分１４ａ１，１４ｂ１間に導電性の冷却板１８が支持され、その冷却板１８の下面に第２平板電極１２が固定されている。第２平板電極１２の固定は別の方法により行うことができる。例えば真空チャンバ１２の底面２ｃ上に上記支持部材１４ａ，１４ｂを立設し、その折曲げ延長部分１４ａ１，１４ｂ１間に導電性冷却板１８を支持するようにしてもよい。その他の適宜の固定方法でよく、本発明はこれらの固定に限定されるものではない。   Support members 14 a and 14 b are suspended from the ceiling surface 2 a of the vacuum chamber 2. A conductive cooling plate 18 is supported between the bent extended portions 14a1 and 14b1 of the support members 14a and 14b, and the second flat plate electrode 12 is fixed to the lower surface of the cooling plate 18. The second plate electrode 12 can be fixed by another method. For example, the support members 14a and 14b may be erected on the bottom surface 2c of the vacuum chamber 12, and the conductive cooling plate 18 may be supported between the bent extended portions 14a1 and 14b1. Other appropriate fixing methods may be used, and the present invention is not limited to these fixing methods.

第１平板電極１０は陽極側として直流電源２０の陽極が接続される。第２平板電極１２は陰極側として直流電源２０の陰極が接続されている。直流電源２０は真空チャンバ２外に位置しており直流電源２０の負極端子から電源線２２が真空密封シール２３ａを介して真空チャンバ２内部に配線されて冷却板１８に接続され、これにより第２平板電極１２は直流電源２０の負極に接続される。また、直流電源２０の正極端子から電源線２４が真空密封シール２３ｂを介して真空チャンバ２内部に配線されて支持台８に接続される。これにより第１平板電極１０は直流電源２０の正極に接続される。この場合、直流電源２０の正極側と支持台８とを接地することができる。直流電源２０は電圧１００ないし２０００Ｖに可変調整することができる可変電源が好ましい。   The first plate electrode 10 is connected to the anode of the DC power supply 20 on the anode side. The second plate electrode 12 is connected to the cathode of the DC power supply 20 on the cathode side. The DC power source 20 is located outside the vacuum chamber 2, and a power line 22 is wired from the negative terminal of the DC power source 20 to the inside of the vacuum chamber 2 through the vacuum sealing seal 23a and connected to the cooling plate 18, whereby the second power source 22 is connected. The plate electrode 12 is connected to the negative electrode of the DC power supply 20. Further, a power line 24 is wired from the positive terminal of the DC power source 20 to the inside of the vacuum chamber 2 through the vacuum sealing seal 23 b and connected to the support base 8. As a result, the first plate electrode 10 is connected to the positive electrode of the DC power supply 20. In this case, the positive electrode side of the DC power supply 20 and the support base 8 can be grounded. The DC power supply 20 is preferably a variable power supply that can be variably adjusted to a voltage of 100 to 2000V.

以上の構成において実施の形態１の直流プラズマＣＶＤ装置１は、第１平板電極１０の電極面（第１電極面）１０ａに近接した位置で導体ワイヤ２６を張った状態に支持して導体ワイヤ２６を回転駆動する支持／駆動手段２８を備えている。   In the above configuration, the direct current plasma CVD apparatus 1 according to the first embodiment supports the conductor wire 26 in a state where the conductor wire 26 is stretched at a position close to the electrode surface (first electrode surface) 10a of the first flat plate electrode 10. Is provided with support / drive means 28 for rotationally driving.

支持／駆動手段２８は、支持手段と駆動手段とを備えるものである。支持／駆動手段２８において、支持手段は第１電極面１０ａの長手方向一端側に配置されてかつ導体ワイヤ２６に引っ張りテンションを付与した状態で導体ワイヤ２６の一端側を回転自在に支持する第１支持部Ａと、第１電極面１０ａの長手方向他端側に配置されて導体ワイヤ２６他端側を支持する第２支持部Ｂとを含む。   The support / drive means 28 includes support means and drive means. In the support / driving means 28, the support means is disposed on one end side in the longitudinal direction of the first electrode surface 10a and firstly supports one end side of the conductor wire 26 in a state where a tensile tension is applied to the conductor wire 26. The support part A and the 2nd support part B which is arrange | positioned at the longitudinal direction other end side of the 1st electrode surface 10a, and supports the conductor wire 26 other end side are included.

第１支持部Ａおよび第２支持部Ｂを説明する。第１支持部Ａは図２に、第２支持部Ｂは図３に拡大して示す。   The 1st support part A and the 2nd support part B are demonstrated. The first support A is shown in FIG. 2 and the second support B is shown in FIG.

図１、図２を参照して第１支持部Ａにおいて、真空チャンバ２の底面２ｃ上に支持部材３０が立設されている。支持部材３０は導体ワイヤ２６の一端側が挿入される軸方向の導体ワイヤ挿入孔３０ａを有する。支持部材３０は導体ワイヤ挿入孔３０ａの外周縁に円筒ボス状の導体ワイヤ固定具装着部（以下、装着部）３０ｂを備える。導体ワイヤ挿入孔３０ａは装着部３０ｂを軸方向に貫通している。装着部３０ｂには円筒状の導体ワイヤ固定具３２が回転自在に装着される。   With reference to FIGS. 1 and 2, in the first support portion A, a support member 30 is erected on the bottom surface 2 c of the vacuum chamber 2. The support member 30 has an axial conductor wire insertion hole 30a into which one end side of the conductor wire 26 is inserted. The support member 30 includes a cylindrical boss-shaped conductor wire fixture mounting portion (hereinafter referred to as a mounting portion) 30b on the outer peripheral edge of the conductor wire insertion hole 30a. The conductor wire insertion hole 30a penetrates the mounting portion 30b in the axial direction. A cylindrical conductor wire fixture 32 is rotatably mounted on the mounting portion 30b.

導体ワイヤ固定具３２は装着部３０ｂが入り込むことができる円筒内周面３２ａと、導体ワイヤ固定具３２に装着部３０ｂが装着された状態で装着部３０ｂの導体ワイヤ挿入孔３０ａに連通する軸方向の導体ワイヤ挿入孔３２ｂとを有する。   The conductor wire fixture 32 has a cylindrical inner peripheral surface 32a into which the attachment portion 30b can enter, and an axial direction communicating with the conductor wire insertion hole 30a of the attachment portion 30b in a state where the attachment portion 30b is attached to the conductor wire fixture 32. Conductor wire insertion hole 32b.

導体ワイヤ固定具３２はこの導体ワイヤ挿入孔３２ａに直角方向に交差して連通する半径方向のネジ孔３２ｃを有する。   The conductor wire fixture 32 has a radial screw hole 32c that intersects and communicates with the conductor wire insertion hole 32a in a perpendicular direction.

ネジ孔３２ｃは導体ワイヤ固定ネジ３４を挿入することが可能になっている。   The conductor hole fixing screw 34 can be inserted into the screw hole 32c.

装着部３０ｂに導体ワイヤ固定具３２を装着した状態で装着部３０ｂと導体ワイヤ固定具３２の内部底面３２ｄとの間には導体ワイヤテンション付与手段である圧縮スプリング３３が介装されている。   A compression spring 33, which is a conductor wire tension applying means, is interposed between the mounting portion 30b and the inner bottom surface 32d of the conductor wire fixture 32 in a state where the conductor wire fixture 32 is mounted on the mounting portion 30b.

導体ワイヤ固定具３２の導体ワイヤ挿入孔３２ａは導電性ワイヤ２６の一端側が導体ワイヤ挿入孔３２ｂ外に突き出ることを可能にしている。これは長い導電性ワイヤ２６であってもテンションをかけて成膜位置にセットすることを可能にしている。   The conductor wire insertion hole 32a of the conductor wire fixture 32 allows one end side of the conductive wire 26 to protrude out of the conductor wire insertion hole 32b. This makes it possible to set a long conductive wire 26 at a film forming position under tension.

図１、図３を参照して第２支持部Ｂにおいて、真空チャンバ２の底面２ｃ上に支持部材３６が立設されている。支持部材３６は導体ワイヤ２６の他端側が挿入される軸方向の導体ワイヤ挿入孔３６ａを有する。支持部材３６は導体ワイヤ挿入孔３６ａの外周縁に円筒状の装着部３６ｂを備える。導体ワイヤ挿入孔３６ａは装着部３６ｂを軸方向に貫通している。装着部３６ｂには導体ワイヤ固定具３８が回転自在に装着される。    With reference to FIGS. 1 and 3, in the second support B, a support member 36 is erected on the bottom surface 2 c of the vacuum chamber 2. The support member 36 has an axial conductor wire insertion hole 36 a into which the other end side of the conductor wire 26 is inserted. The support member 36 includes a cylindrical mounting portion 36b on the outer peripheral edge of the conductor wire insertion hole 36a. The conductor wire insertion hole 36a penetrates the mounting portion 36b in the axial direction. A conductor wire fixture 38 is rotatably mounted on the mounting portion 36b.

導体ワイヤ固定具３８は装着部３６ｂが入り込むことができる円筒内周面３８ａと、導体ワイヤ固定具３８に装着部３６ｂが装着された状態で装着部３６ｂの導体ワイヤ挿入孔３６ａに連通する軸方向の有底導体ワイヤ挿入孔３８ｂとを有する。   The conductor wire fixing tool 38 has a cylindrical inner peripheral surface 38a into which the mounting portion 36b can enter, and an axial direction communicating with the conductor wire insertion hole 36a of the mounting portion 36b in a state where the mounting portion 36b is mounted on the conductor wire fixing tool 38. Bottomed conductor wire insertion hole 38b.

導体ワイヤ固定具３８はこの有底導体ワイヤ挿入孔３８ａに直角方向に交差して連通する半径方向のネジ孔３８ｃを有する。   The conductor wire fixing member 38 has a radial screw hole 38c that intersects and communicates with the bottomed conductor wire insertion hole 38a in a perpendicular direction.

ネジ孔３８ｃは導体ワイヤ固定ネジ４０を挿入することが可能になっている。   The conductor hole fixing screw 40 can be inserted into the screw hole 38c.

装着部３６ｂに導体ワイヤ固定具３８を装着した状態で装着部３６ｂと導体ワイヤ固定具３８の内部底面３８ｄとの間には圧縮スプリング３５が介装されている。   A compression spring 35 is interposed between the mounting portion 36 b and the inner bottom surface 38 d of the conductor wire fixing tool 38 in a state where the conductor wire fixing tool 38 is mounted on the mounting portion 36 b.

導体ワイヤ固定具３８の軸方向他端側には回転動力伝達部材である第１傘歯車４２が固定されている。   A first bevel gear 42 which is a rotational power transmission member is fixed to the other end side in the axial direction of the conductor wire fixture 38.

真空チャンバ２外には導体ワイヤ２６を回転駆動するための駆動モータ４４が設置され、この駆動モータ４４のモータ軸４４ａは、駆動モータ４４の回転速度を減速する減速機構４６に連結されている。この連結構造の詳細は略している。減速機構４６から真空チャンバ２内部に駆動軸４６ａが延び、その駆動軸４６ａの上端に第１傘歯車４２に噛み合う回転動力伝達部材である第２傘歯車４８が取り付けられている。   A drive motor 44 for rotationally driving the conductor wire 26 is installed outside the vacuum chamber 2, and a motor shaft 44 a of the drive motor 44 is connected to a speed reduction mechanism 46 that reduces the rotational speed of the drive motor 44. Details of this connection structure are omitted. A drive shaft 46 a extends from the speed reduction mechanism 46 into the vacuum chamber 2, and a second bevel gear 48, which is a rotational power transmission member that meshes with the first bevel gear 42, is attached to the upper end of the drive shaft 46 a.

回転動力の伝達は上記歯車式ではなくベルト式でもよい。例えば、導体ワイヤ固定具３８の軸方向他端側と減速機構４６の駆動軸４６ａとの間に動力伝達ベルトを架設し、この動力伝達ベルトで導電性ワイヤ２６に回転動力を伝達するようにしてもよい。また、回転速度を任意に制御することができる駆動モータ４４であれば、減速機構４６は必ずしも必要としない。駆動モータ４４のモータ軸４４ａに第２傘歯車を設け、この第２傘歯車と第１傘歯車とを連結させてもよい。上記駆動手段は、いずれに限定されるものではなく、他の駆動手段を任意に適用することができる。   The transmission of rotational power may be a belt type instead of the gear type. For example, a power transmission belt is installed between the other end in the axial direction of the conductor wire fixture 38 and the drive shaft 46a of the speed reduction mechanism 46, and rotational power is transmitted to the conductive wire 26 by this power transmission belt. Also good. Further, if the drive motor 44 can arbitrarily control the rotation speed, the speed reduction mechanism 46 is not necessarily required. A second bevel gear may be provided on the motor shaft 44a of the drive motor 44, and the second bevel gear and the first bevel gear may be connected. The driving means is not limited to any one, and other driving means can be arbitrarily applied.

上記第１支持部Ａと第２支持部Ｂとにより導体ワイヤ２６を第１平板電極１０の電極面１０ａとほぼ平行にかつ該電極面１０ａから微小距離隔てた状態で引っ張りテンションを与えた状態に配置セットすることができる。   The first support portion A and the second support portion B cause the conductor wire 26 to be in a state in which a tensile tension is applied in a state of being substantially parallel to the electrode surface 10a of the first flat plate electrode 10 and being separated from the electrode surface 10a by a minute distance. Can be placed and set.

なお、導体ワイヤ２６は、第２支持部Ｂ側から回転駆動されるに際して第１支持部Ａに回転摩擦力が作用するが、この回転摩擦力によっては導体ワイヤ２６に捩れが発生するおそれがある。導体ワイヤ２６の捩れを防止することが好ましい。   Note that, when the conductor wire 26 is rotationally driven from the second support portion B side, a rotational friction force acts on the first support portion A, but the conductor wire 26 may be twisted due to this rotational friction force. . It is preferable to prevent the conductor wire 26 from being twisted.

例えば、第１支持部Ａでは、導体ワイヤ挿入孔３０ａの孔内周面と導体ワイヤ２６の表面との導体ワイヤ２６の回転時の摺動接触、装着部３０ｂと導体ワイヤ固定具３２との間の圧縮スプリング３３の摺動接触等による摩擦を低減することが好ましい。第２支持部Ｂでは、導体ワイヤ挿入孔３６ａの孔内周面と導体ワイヤ２６の表面との導体ワイヤ２６の回転時の摺動接触、装着部３６ｂと導体ワイヤ固定具３８との間の圧縮スプリング３５の摺動接触等による摩擦を低減することが好ましい。   For example, in the first support portion A, sliding contact during rotation of the conductor wire 26 between the inner peripheral surface of the conductor wire insertion hole 30 a and the surface of the conductor wire 26, between the mounting portion 30 b and the conductor wire fixture 32. It is preferable to reduce friction due to sliding contact of the compression spring 33. In the second support portion B, sliding contact during rotation of the conductor wire 26 between the inner peripheral surface of the conductor wire insertion hole 36a and the surface of the conductor wire 26, compression between the mounting portion 36b and the conductor wire fixture 38 It is preferable to reduce friction due to sliding contact of the spring 35 or the like.

この摺動による摩擦低減には真空環境に適合した例えば真空軸受等の気体軸受を用いることができる。実施の形態１では、本発明の要旨ではなく、本発明の理解のために、気体軸受の組み付け構造は示していない。真空軸受は外輪と内輪との間に転動体を配置したものであり、外輪と内輪と転動体は例えばＴａ,Ｗ，ＭｏまたはＭｏ合金等により形成し、それらの間を例えばＧａまたはＧａ合金からなる潤滑剤で潤滑したものである。   A gas bearing such as a vacuum bearing suitable for a vacuum environment can be used to reduce the friction caused by the sliding. In the first embodiment, the assembly structure of the gas bearing is not shown for the purpose of understanding the present invention, not the gist of the present invention. A vacuum bearing has rolling elements arranged between an outer ring and an inner ring. The outer ring, the inner ring, and the rolling element are made of, for example, Ta, W, Mo, or Mo alloy, and the gap between them is made of, for example, Ga or Ga alloy. It is lubricated with a lubricant.

例えば、第１支持部Ａでは、導体ワイヤ挿入孔３０ａの内周面を真空軸受の内輪内周面で構成する。装着部３０ｂの外周面を真空軸受の内輪の外周面、導体ワイヤ固定具３２の円筒内周面３２ａを真空軸受の外輪の外周面で構成し、それらの間に転動体を配置する構成が考えられる。第２支持部Ｂでも同様である。また、後述する実施の形態２においても同様である。真空軸受の構成は周知であり、その詳細な説明は略する。   For example, in the 1st support part A, the inner peripheral surface of the conductor wire insertion hole 30a is comprised by the inner ring inner peripheral surface of a vacuum bearing. A configuration in which the outer peripheral surface of the mounting portion 30b is constituted by the outer peripheral surface of the inner ring of the vacuum bearing, the cylindrical inner peripheral surface 32a of the conductor wire fixture 32 is constituted by the outer peripheral surface of the outer ring of the vacuum bearing, and a rolling element is arranged therebetween. It is done. The same applies to the second support B. The same applies to Embodiment 2 described later. The configuration of the vacuum bearing is well known and will not be described in detail.

以上の構成において、第１平板電極１０と第２平板電極１２それぞれの形状を説明する。両平板電極１０，１２は図４で示すように、それぞれの電極面１０ａ、１２ａが互いに同寸法同形状の平坦でかつ平面視で長方形をなす形状に形成され、真空チャンバ２内部において互いから一定距離隔てられた位置で互いに平行でかつそれぞれの投影線が上下方向でほぼ完全に一致するように位置調整されて配置されている。   In the above configuration, the shapes of the first plate electrode 10 and the second plate electrode 12 will be described. As shown in FIG. 4, both the plate electrodes 10, 12 are formed so that the respective electrode surfaces 10 a, 12 a are flat and rectangular with the same dimensions and shape, and are constant from each other inside the vacuum chamber 2. The positions are adjusted so that the projection lines are parallel to each other at positions separated by a distance and the projection lines almost completely coincide with each other in the vertical direction.

平板電極１０，１２の電極面１０ａ，１２ａは、例えば短辺が１０−３０ｍｍ、長辺が１２０−２２０ｍｍの長方形の形状をなしている。もちろん、この長方形の形状は、短辺１０ｍｍ以下でも長辺２２０ｍｍ以上でもよく、導体ワイヤ２６の線径や長さにより決定することができる。例えば、複数の導体ワイヤ２６の表面に一度に炭素膜を成膜する場合、上記長方形の短辺はそれに合わせて決定することができる。   The electrode surfaces 10a and 12a of the plate electrodes 10 and 12 have, for example, a rectangular shape having a short side of 10-30 mm and a long side of 120-220 mm. Of course, this rectangular shape may have a short side of 10 mm or less or a long side of 220 mm or more, and can be determined by the wire diameter or length of the conductor wire 26. For example, when a carbon film is formed on the surfaces of the plurality of conductor wires 26 at once, the short side of the rectangle can be determined accordingly.

なお、第２平板電極１２の電極面の面積≧第１平板電極１０の電極面の面積であれば、第２平板電極１２の電極面の形状は長方形に限定されず、円形やその他の形状であってもよい。また、第１平板電極１０の電極面は長方形に限定されず、矩形形状であればよい。   In addition, as long as the area of the electrode surface of the 2nd flat plate electrode 12 is the area of the electrode surface of the 1st flat plate electrode 10, the shape of the electrode surface of the 2nd flat plate electrode 12 is not limited to a rectangle, It is circular and other shapes. There may be. Moreover, the electrode surface of the 1st flat plate electrode 10 is not limited to a rectangle, What is necessary is just a rectangular shape.

図５を参照して、以上の構成を備えた実施の形態１の直流プラズマＣＶＤ装置１を用いて導体ワイヤ２６の表面に炭素膜を成膜する方法を説明する。   With reference to FIG. 5, a method of forming a carbon film on the surface of conductor wire 26 using DC plasma CVD apparatus 1 of the first embodiment having the above-described configuration will be described.

まず、導体ワイヤ２６の一端側を第１支持部Ａの支持部材３０の導体ワイヤ挿入孔３０ａに通し、導体ワイヤ固定具３２内部に挿入する。次いで、導体ワイヤ固定ネジ３４を導体ワイヤ固定具３２のネジ孔３２ｃに入れて導体ワイヤ２６の一端側を導体ワイヤ固定具３２に固定する。この場合、導体ワイヤ固定具３２は支持部材３０の装着部３０ｂに対して回転自在になっている。次に、導体ワイヤ２６の他端側を第２支持部Ｂの支持部材３６の導体ワイヤ挿入孔３６ａに通し、装着部３６ｂに装着されている導体ワイヤ固定具３８のネジ孔３８ｃに導体ワイヤ固定ネジ４０を入れることにより導電性ワイヤ２６の他端側を固定する。   First, one end side of the conductor wire 26 is passed through the conductor wire insertion hole 30 a of the support member 30 of the first support portion A and inserted into the conductor wire fixture 32. Next, the conductor wire fixing screw 34 is inserted into the screw hole 32 c of the conductor wire fixing tool 32, and one end side of the conductor wire 26 is fixed to the conductor wire fixing tool 32. In this case, the conductor wire fixture 32 is rotatable with respect to the mounting portion 30 b of the support member 30. Next, the other end side of the conductor wire 26 is passed through the conductor wire insertion hole 36a of the support member 36 of the second support portion B, and the conductor wire is fixed to the screw hole 38c of the conductor wire fixture 38 attached to the attachment portion 36b. The other end side of the conductive wire 26 is fixed by inserting the screw 40.

上記において、導体ワイヤ２６は、第１支持部Ａの圧縮スプリング３３と第２支持部Ｂの圧縮スプリング３５とにより第１平板電極１０上で引っ張りテンションを受けた状態で配置される。導体ワイヤ２６は第１平板電極１０上から微小距離隔てて配置されている。   In the above description, the conductor wire 26 is arranged in a state in which it receives tensile tension on the first flat plate electrode 10 by the compression spring 33 of the first support portion A and the compression spring 35 of the second support portion B. The conductor wire 26 is disposed at a minute distance from the first plate electrode 10.

以上のようにして第１平板電極１０上への導体ワイヤ２６の設置が完了すると、真空チャンバ２の内圧を１０ないし１００００Ｐａに設定し、直流電源２０の電圧を１００ないし２０００Ｖに設定して両平板電極１０，１２間に直流電源２０から直流電圧を印加し、かつ、真空チャンバ２内に炭化水素と水素とを含む炭素膜成膜用ガスを導入して両平板電極１０，１２間に水素プラズマ５０を発生させて導体ワイヤ２６の表面に炭素膜５２を成膜する。この炭素膜５２はカーボンナノチューブ、カーボンナノウォール、その他、電界電子放出用の炭素膜である。   When the installation of the conductor wire 26 on the first plate electrode 10 is completed as described above, the internal pressure of the vacuum chamber 2 is set to 10 to 10,000 Pa, the voltage of the DC power source 20 is set to 100 to 2000 V, and both plates are set. A DC voltage is applied between the electrodes 10 and 12 from the DC power source 20, and a carbon film forming gas containing hydrocarbons and hydrogen is introduced into the vacuum chamber 2 to generate hydrogen plasma between the plate electrodes 10 and 12. 50 is generated to form a carbon film 52 on the surface of the conductor wire 26. The carbon film 52 is a carbon nanotube, carbon nanowall, or other carbon film for field electron emission.

上記成膜に際しては、駆動モータ４４に通電してこの駆動モータ４４を作動させて、第２傘歯車４８を回転させ、これに噛み合う第１傘歯車４２を駆動回転させる。これによって導体ワイヤ２６が回転（自転）させられる。この導体ワイヤ２６の自転速度は例えば毎秒数回転程度である。なお減速機構４６により駆動モータ４４の回転速度は減速することができるようになっている。   During the film formation, the drive motor 44 is energized to operate the drive motor 44 to rotate the second bevel gear 48 and the first bevel gear 42 meshing with the second bevel gear 42 is driven to rotate. As a result, the conductor wire 26 is rotated (spinned). The rotation speed of the conductor wire 26 is, for example, about several rotations per second. Note that the rotation speed of the drive motor 44 can be reduced by the speed reduction mechanism 46.

以上の成膜においては、導体ワイヤ２６の表面に均等な膜厚で炭素膜５２が成膜される。ここで、図６、図７を参照して成膜用のプラズマ５０の断面形状を説明する。   In the above film formation, the carbon film 52 is formed on the surface of the conductor wire 26 with a uniform film thickness. Here, the sectional shape of the plasma 50 for film formation will be described with reference to FIGS.

図６は、図１の直流プラズマＣＶＤ装置１による第１平板電極１０上に発生するプラズマ５０の長手方向断面を示す図、図７は、図１の直流プラズマＣＶＤ装置１による第１平板電極１０上に発生するプラズマ５０の横断面を示す図である。   FIG. 6 is a view showing a longitudinal section of the plasma 50 generated on the first plate electrode 10 by the DC plasma CVD apparatus 1 of FIG. 1, and FIG. 7 is a diagram of the first plate electrode 10 by the DC plasma CVD apparatus 1 of FIG. It is a figure which shows the cross section of the plasma 50 generate | occur | produced on the top.

これらの図に示す第１平板電極１０の第１電極面１０ａは長方形の形状に形成されているので、本出願人が実験により確認したところ、プラズマ５０は第１平板電極１０のどの電極面１０ａ位置においてもその存在高さが均等、すなわち、その存在高さをなぞる線が電極面１０ａに対してほぼ平行となり、その断面形状は第１平板電極１０の電極面１０ａを矩形の１辺とし該１辺とこれに対向する辺とがほぼ平行となる長方形の形状で発生するようになった。   Since the first electrode surface 10a of the first flat plate electrode 10 shown in these drawings is formed in a rectangular shape, the present applicant has confirmed through experiments that the plasma 50 is generated by any electrode surface 10a of the first flat plate electrode 10. Even at the position, the existence height is uniform, that is, a line tracing the existence height is substantially parallel to the electrode surface 10a, and the cross-sectional shape is such that the electrode surface 10a of the first plate electrode 10 is one side of a rectangle. This occurs in a rectangular shape in which one side and a side opposite thereto are almost parallel.

そして、このような断面形状を有するプラズマ５０中で導体ワイヤ２６の表面に炭素膜５２を成膜した場合、炭素膜５２の膜厚は均等化されるようになった。そして、このプラズマ５０の断面形状に加えて実施の形態では導体ワイヤ２６を回転させるので、炭素膜５２は導体ワイヤ２６の表面全体に均等に成膜されるようになった。   When the carbon film 52 is formed on the surface of the conductor wire 26 in the plasma 50 having such a cross-sectional shape, the film thickness of the carbon film 52 is equalized. Since the conductor wire 26 is rotated in the embodiment in addition to the cross-sectional shape of the plasma 50, the carbon film 52 is uniformly formed on the entire surface of the conductor wire 26.

図８に導体ワイヤ２６のＳ１−Ｓ１，Ｓ２−Ｓ２，Ｓ３−Ｓ３部分における表面の炭素膜５２の膜厚状態を示す。図８（ａ）は、導体ワイヤ２６の長手方向中央側、長手方向一端側、長手方向他端側それぞれの縦断面を円中に拡大して示し、図８（ｂ）は長手方向中央側、長手方向一端側、長手方向他端側それぞれの横断面を示す。図８で示すように導体ワイヤ２６の表面にはその長手方向のいずれの部分においても長手方向均等な膜厚に、また、円周方向均等な膜厚に炭素膜５２を成膜することができる。   FIG. 8 shows the film thickness state of the carbon film 52 on the surface of the conductor wire 26 at the S1-S1, S2-S2, and S3-S3 portions. FIG. 8A shows an enlarged longitudinal section of each of the conductor wire 26 in the longitudinal direction center side, the longitudinal direction one end side, and the longitudinal direction other end side in a circle, and FIG. The cross sections of one end in the longitudinal direction and the other end in the longitudinal direction are shown. As shown in FIG. 8, the carbon film 52 can be formed on the surface of the conductor wire 26 so as to have a uniform film thickness in the longitudinal direction and a uniform film thickness in the circumferential direction in any part in the longitudinal direction. .

これについて本出願人は次のように考察した。  The present applicant considered this as follows.

第１には両平板電極１０，１２の電極面が長方形の形状を有することにある。すなわち、プラズマ５０中で電子が原料分子である炭化水素ガスと衝突する頻度が均等化され、また、温度分布も均一化される等により、炭化水素ガスの分解も電極面全体に均等化される結果、電子により分解される炭化水素ガスの量は同電極面全体にわたり均等となり、これにより第１平板電極１０の電極面１０ａに配置された導体ワイヤ２６の表面に成膜される炭素膜５２の膜厚はその長手方向全体に均等となったものと考えられる。   First, the electrode surfaces of both plate electrodes 10 and 12 have a rectangular shape. That is, the frequency with which electrons collide with the hydrocarbon gas that is the source molecule in the plasma 50 is equalized, and the temperature distribution is also uniformed, so that the decomposition of the hydrocarbon gas is also equalized over the entire electrode surface. As a result, the amount of the hydrocarbon gas decomposed by the electrons is uniform over the entire electrode surface, whereby the carbon film 52 formed on the surface of the conductor wire 26 disposed on the electrode surface 10a of the first flat plate electrode 10 is formed. The film thickness is considered to be uniform throughout the longitudinal direction.

第２には導体ワイヤ２６を炭素膜５２の成膜に際して回転駆動することにある。これを、図９を参照して説明すると、第１平板電極１０上には等電位線５３が点線で示すように形成されるが、この等電位線５３が導体ワイヤ２６付近で歪むことによる。そのため、導体ワイヤ２６を回転駆動すると、導体ワイヤ２６はこの等電位線５３が歪んでいても、その表面に炭素膜５２が均等に成膜されるようになる。   Secondly, the conductor wire 26 is driven to rotate when the carbon film 52 is formed. This will be described with reference to FIG. 9. The equipotential line 53 is formed on the first plate electrode 10 as indicated by the dotted line. This is because the equipotential line 53 is distorted in the vicinity of the conductor wire 26. Therefore, when the conductor wire 26 is rotationally driven, the carbon film 52 is uniformly formed on the surface of the conductor wire 26 even if the equipotential line 53 is distorted.

図１０に実施の形態の直流プラズマＣＶＤ装置１で製造したワイヤ状陰極５４を組み込んだフラットパネル型のフィールドエミッション型ランプ５６の概略構成を部分的に示す。このフィールドエミッション型ランプ５６は、上下一対のフラットパネル５８，６０を備え、一方のフラットパネル５８の内面にワイヤ状陰極５４が配置されている。他方のフラットパネル６０の内面には蛍光体６２付きの陽極６４が設けられている。陽極６４は、フラットパネル６０の内面にＩＴＯやアルミニウム等の金属をスパッタリングやＥＢ蒸着等により薄膜状にして形成されているとともに、スラリー塗布法、スクリーン印刷、電気永動法、沈降法等により蛍光体６２が膜状に形成されて構成されている。   FIG. 10 partially shows a schematic configuration of a flat panel type field emission lamp 56 incorporating the wire-like cathode 54 manufactured by the DC plasma CVD apparatus 1 of the embodiment. The field emission lamp 56 includes a pair of upper and lower flat panels 58 and 60, and a wire-like cathode 54 is disposed on the inner surface of one flat panel 58. An anode 64 with a phosphor 62 is provided on the inner surface of the other flat panel 60. The anode 64 is formed on the inner surface of the flat panel 60 in the form of a thin film of metal such as ITO or aluminum by sputtering, EB deposition or the like, and fluorescent by slurry coating, screen printing, electric perturbation, precipitation, etc. The body 62 is formed in a film shape.

ワイヤ状陰極５４と陽極６４との間に図示略の直流電源から数ｋＶの電圧を印加することにより、ワイヤ状陰極５４の表面の炭素膜に電界集中が発生して電子が電界放射により放出され、その放出された電子は蛍光体６２に衝突し、該蛍光体６２は励起発光して光がフィールドエミッション型ランプ５６の外部に放出される。   By applying a voltage of several kV from a DC power supply (not shown) between the wire-like cathode 54 and the anode 64, electric field concentration occurs in the carbon film on the surface of the wire-like cathode 54, and electrons are emitted by field emission. The emitted electrons collide with the phosphor 62, and the phosphor 62 is excited to emit light, and light is emitted to the outside of the field emission lamp 56.

このフィールドエミッション型ランプ５６ではワイヤ状陰極５４の表面に炭素膜がその長手方向にも円周方向にも均一に成膜されているので電子は矢印で示すように均等に放出される結果、発光特性に輝度むらがないフィールドエミッション型ランプを提供することができる。   In this field emission type lamp 56, the carbon film is uniformly formed on the surface of the wire-like cathode 54 both in the longitudinal direction and in the circumferential direction, so that electrons are emitted uniformly as shown by arrows, resulting in light emission. It is possible to provide a field emission type lamp having no luminance unevenness in characteristics.

図１１を参照して実施の形態２に係る直流プラズマＣＶＤ装置１を説明する。図１１において、図１と対応する部分には同一の符号を付している。この直流プラズマＣＶＤ装置１は、縦置き型であり、導電性または絶縁性の真空チャンバ２を備える。真空チャンバ２にはガス導入部４とガス排出部６とが設けられている。実施の形態２におけるガス導入部４とガス排出部６は、実施の形態１のそれらと同様であるのでここでは符号を付すのみでその説明を省略する。炭素膜成膜用ガスも実施の形態１と同様である。真空チャンバ２の内圧も実施の形態１と同様である。   A direct-current plasma CVD apparatus 1 according to Embodiment 2 will be described with reference to FIG. In FIG. 11, parts corresponding to those in FIG. The DC plasma CVD apparatus 1 is a vertical type and includes a vacuum chamber 2 that is electrically conductive or insulating. The vacuum chamber 2 is provided with a gas introduction part 4 and a gas discharge part 6. Since the gas introduction part 4 and the gas discharge part 6 in the second embodiment are the same as those in the first embodiment, only the reference numerals are given here, and the description thereof is omitted. The carbon film forming gas is the same as that in the first embodiment. The internal pressure of the vacuum chamber 2 is the same as that in the first embodiment.

真空チャンバ２内部では実施の形態１と同様の形状を有する第１平板電極１０と第２平板電極１２とが対向配置されている。これら平板電極１０，１２は支持部材１４ａ，１４ｂにより支持されている。支持部材１４ｂは途中に絶縁部材１５が介装されている。   Inside the vacuum chamber 2, a first flat plate electrode 10 and a second flat plate electrode 12 having the same shape as in the first embodiment are arranged to face each other. These plate electrodes 10 and 12 are supported by support members 14a and 14b. An insulating member 15 is interposed in the middle of the support member 14b.

第１平板電極１０は陽極側として直流電源２０の陽極が接続され、第２平板電極１２は陰極側として直流電源２０の陰極が接続されている。   The first plate electrode 10 is connected to the anode of the DC power source 20 on the anode side, and the second plate electrode 12 is connected to the cathode of the DC power source 20 on the cathode side.

以上の構成において本実施の形態２の直流プラズマＣＶＤ装置１は、第１平板電極１０の電極面（第１電極面）１０ａに近接した位置で導体ワイヤ２６を張った状態に支持して導体ワイヤ２６を回転駆動する支持／駆動手段２８を備えている。   In the above configuration, the direct current plasma CVD apparatus 1 according to the second embodiment supports the conductor wire 26 in a state where the conductor wire 26 is stretched at a position close to the electrode surface (first electrode surface) 10a of the first flat plate electrode 10. Support / drive means 28 for rotating the drive 26 is provided.

この支持／駆動手段２８において、その支持手段は第１電極面１０ａの長手方向上端側の上方に配置されてかつ導体ワイヤ２６に引っ張りテンションを付与した状態で導体ワイヤ２６の上端側を回転自在に支持する第１支持部Ａと、第１電極面１０ａの長手方向下端側の下方に配置されて導体ワイヤ２６の下端側を支持する第２支持部Ｂとを含み、その駆動手段は、導体ワイヤ２６に回転動力を与える。   In the supporting / driving means 28, the supporting means is disposed above the upper end side in the longitudinal direction of the first electrode surface 10a, and the upper end side of the conductor wire 26 is rotatable in a state where a tensile tension is applied to the conductor wire 26. A first support portion A that supports the second support portion B that is disposed below the lower end side in the longitudinal direction of the first electrode surface 10a and supports the lower end side of the conductor wire 26; Rotational power is given to 26.

支持／駆動手段２８において第１支持部Ａおよび第２支持部Ｂを説明する。第１支持部Ａは図１２に、第２支持部Ｂは図１３に拡大して示す。   The first support part A and the second support part B in the support / drive means 28 will be described. The first support part A is shown in FIG. 12, and the second support part B is shown in FIG.

図１１、図１２を参照して第１支持部Ａにおいて、上下方向に延びる支持部材１４ａの上端側から水平方向に支持部材３０が延びている。支持部材３０は導体ワイヤ２６の上端側が挿入される軸方向の導体ワイヤ挿入孔３０ａを有する。支持部材３０は導体ワイヤ挿入孔３０ａの外周縁に円筒ボス状の装着部３０ｂを備える。導体ワイヤ挿入孔３０ａは装着部３０ｂを軸方向に貫通している。装着部３０ｂには導体ワイヤ２６の上端側を固定するための円筒状の導体ワイヤ固定具３２が回転自在に装着される。導体ワイヤ固定具３２は装着部３０ｂが入り込むことができる円筒内周面３２ａと、導体ワイヤ固定具３２に装着部３０ｂが装着された状態で装着部３０ｂの導体ワイヤ挿入孔３０ａに連通する軸方向の導体ワイヤ挿入孔３２ｂとを有する。導体ワイヤ固定具３２はこの導体ワイヤ挿入孔３２ａに直角方向に交差して連通する半径方向のネジ孔３２ｃを有する。ネジ孔３２ｃは導体ワイヤ固定ネジ３４を挿入することが可能になっている。装着部３０ｂに導体ワイヤ固定具３２を装着した状態で装着部３０ｂと導体ワイヤ固定具３２の内部底面３２ｄとの間には圧縮スプリング３３が介装されている。導体ワイヤ固定具３２の導体ワイヤ挿入孔３２ａは導電性ワイヤ２６の上端側が挿入され導体ワイヤ挿入孔３２ａ外に突き出ることを可能にして長い導電性ワイヤ２６であってもテンションをかけて成膜位置にセットすることを可能にしている。   11 and 12, in the first support portion A, the support member 30 extends in the horizontal direction from the upper end side of the support member 14a extending in the vertical direction. The support member 30 has a conductor wire insertion hole 30a in the axial direction in which the upper end side of the conductor wire 26 is inserted. The support member 30 includes a cylindrical boss-shaped mounting portion 30b on the outer peripheral edge of the conductor wire insertion hole 30a. The conductor wire insertion hole 30a penetrates the mounting portion 30b in the axial direction. A cylindrical conductor wire fixture 32 for fixing the upper end side of the conductor wire 26 is rotatably attached to the attachment portion 30b. The conductor wire fixture 32 has a cylindrical inner peripheral surface 32a into which the attachment portion 30b can enter, and an axial direction communicating with the conductor wire insertion hole 30a of the attachment portion 30b in a state where the attachment portion 30b is attached to the conductor wire fixture 32. Conductor wire insertion hole 32b. The conductor wire fixture 32 has a radial screw hole 32c that intersects and communicates with the conductor wire insertion hole 32a in a perpendicular direction. The conductor hole fixing screw 34 can be inserted into the screw hole 32c. A compression spring 33 is interposed between the mounting portion 30 b and the inner bottom surface 32 d of the conductor wire fixing tool 32 in a state where the conductor wire fixing tool 32 is mounted on the mounting portion 30 b. The conductor wire insertion hole 32a of the conductor wire fixture 32 allows the upper end side of the conductive wire 26 to be inserted so as to protrude out of the conductor wire insertion hole 32a, and even if the conductive wire 26 is long, a tension is applied to the film forming position. It is possible to set to.

図１１、図１３を参照して第２支持部Ｂにおいて、真空チャンバ２外には導体ワイヤ２６を回転駆動するための駆動モータ４４が設置され、この駆動モータ４４のモータ軸４４ａが減速機構４６に連結されている。減速機構４６からの駆動軸４６ａが真空チャンバ２の底面２ｃの導体ワイヤ挿入孔を介して上方に延びている。   With reference to FIGS. 11 and 13, in the second support portion B, a drive motor 44 for rotationally driving the conductor wire 26 is installed outside the vacuum chamber 2, and a motor shaft 44 a of the drive motor 44 is a reduction mechanism 46. It is connected to. A drive shaft 46 a from the speed reduction mechanism 46 extends upward through a conductor wire insertion hole in the bottom surface 2 c of the vacuum chamber 2.

支持部材１４ａの下端側から水平方向に支持部材３６が延びている。支持部材３６は導体ワイヤ挿入孔３６ａの外周縁に円筒ボス状の装着部３６ｂを備える。導体ワイヤ挿入孔３６ａは装着部３６ｂを軸方向に貫通している。装着部３６ｂには円筒状の導体ワイヤ固定具３８が回転自在に装着される。導体ワイヤ固定具３８は装着部３６ｂが入り込むことができる円筒内周面３８ａと、導体ワイヤ固定具３８に装着部３６ｂが装着された装着状態で装着部３６ｂの導体ワイヤ挿入孔３６ａに連通する軸方向の有底導体ワイヤ挿入孔３８ｂとを有する。導体ワイヤ固定具３８はこの有底導体ワイヤ挿入孔３８ａに直角方向に交差して連通する半径方向のネジ孔３８ｃを有する。ネジ孔３８ｃは導体ワイヤ固定ネジ４０を挿入することが可能になっている。装着部３６ｂに導体ワイヤ固定具３８を装着した状態で装着部３６ｂと導体ワイヤ固定具３８の内部底面３８ｄとの間には圧縮スプリング３５が介装されている。導体ワイヤ固定具３８は減速機構４６の駆動軸４６ａに連結されている。   A support member 36 extends horizontally from the lower end side of the support member 14a. The support member 36 includes a cylindrical boss-shaped mounting portion 36b on the outer peripheral edge of the conductor wire insertion hole 36a. The conductor wire insertion hole 36a penetrates the mounting portion 36b in the axial direction. A cylindrical conductor wire fixture 38 is rotatably mounted on the mounting portion 36b. The conductor wire fixing tool 38 has a cylindrical inner peripheral surface 38a through which the mounting portion 36b can enter, and a shaft that communicates with the conductor wire insertion hole 36a of the mounting portion 36b when the mounting portion 36b is mounted on the conductor wire fixing tool 38. Direction bottomed conductor wire insertion hole 38b. The conductor wire fixing member 38 has a radial screw hole 38c that intersects and communicates with the bottomed conductor wire insertion hole 38a in a perpendicular direction. The conductor hole fixing screw 40 can be inserted into the screw hole 38c. A compression spring 35 is interposed between the mounting portion 36 b and the inner bottom surface 38 d of the conductor wire fixing tool 38 in a state where the conductor wire fixing tool 38 is mounted on the mounting portion 36 b. The conductor wire fixture 38 is connected to the drive shaft 46 a of the speed reduction mechanism 46.

以上の構成を備えた実施の形態２の直流プラズマＣＶＤ装置１を用いて導体ワイヤ２６の表面に炭素膜を成膜する方法を説明する。まず、導体ワイヤ２６の上端側を支持部材３０の装着部３０ｂの導体ワイヤ挿入孔３０ａに通し、さらに装着部３０ｂに装着されている導体ワイヤ固定具３２の導体ワイヤ挿入孔３２ｂに挿入する。次いで、ネジ３４をネジ孔３２ｃに入れて導体ワイヤ２６の上端を導体ワイヤ固定具３２に固定する。この場合、導体ワイヤ固定具３２は支持部材３０の装着部３０ｂに対して回転自在になっている。次に、導体ワイヤ２６の下端側を支持部材３６の導体ワイヤ挿入孔３６ａに通し、さらに導体ワイヤ固定具３８の有底穴３８ｂに挿入する。次いで、ネジ４０をネジ孔３８ｃに入れて導電性ワイヤ２６の他端を導体ワイヤ固定具３８に固定する。   A method for forming a carbon film on the surface of the conductor wire 26 using the DC plasma CVD apparatus 1 according to the second embodiment having the above configuration will be described. First, the upper end side of the conductor wire 26 is passed through the conductor wire insertion hole 30a of the mounting portion 30b of the support member 30, and further inserted into the conductor wire insertion hole 32b of the conductor wire fixture 32 mounted on the mounting portion 30b. Next, the screw 34 is inserted into the screw hole 32 c and the upper end of the conductor wire 26 is fixed to the conductor wire fixture 32. In this case, the conductor wire fixture 32 is rotatable with respect to the mounting portion 30 b of the support member 30. Next, the lower end side of the conductor wire 26 is passed through the conductor wire insertion hole 36 a of the support member 36 and further inserted into the bottomed hole 38 b of the conductor wire fixture 38. Next, the screw 40 is inserted into the screw hole 38 c and the other end of the conductive wire 26 is fixed to the conductor wire fixing tool 38.

上記において、導体ワイヤ２６は、第１支持部Ａ側の圧縮スプリング３３と第２支持部Ｂ側の圧縮スプリング３５とにより第１平板電極１０上で引っ張りテンションを受けた状態で配置される。導体ワイヤ２６は第１平板電極１０上から微小距離隔てて配置されている。   In the above description, the conductor wire 26 is disposed in a state in which a tensile tension is applied on the first flat plate electrode 10 by the compression spring 33 on the first support portion A side and the compression spring 35 on the second support portion B side. The conductor wire 26 is disposed at a minute distance from the first plate electrode 10.

以上のようにして第１平板電極１０上への導体ワイヤ２６の設置が完了すると、以下の工程は実施の形態１と同様であり、導体ワイヤ２６の表面には均等な膜厚で炭素膜が成膜される。   When the installation of the conductor wire 26 on the first flat plate electrode 10 is completed as described above, the following steps are the same as those in the first embodiment, and a carbon film with a uniform film thickness is formed on the surface of the conductor wire 26. A film is formed.

なお、図１４の実施の形態３で示すように、真空チャンバ２の底面に支持部材３０，３６を立設することができる例えば凹部ａ１，ａ２；ｂ１，ｂ２；ｃ１，ｃ２を設け、導体ワイヤ２６が短いときは、図１４（ａ）で示すように、それに対応した大きさの第１平板電極１０を配置するので、対向間隔が短い凹部ａ１，ａ２に支持部材３０，３６を立設し、導体ワイヤ２６が中程度のときは、図１４（ｂ）で示すように、それに対応した大きさの第１平板電極１０を配置するので、対向間隔が短い凹部ｂ１，ｂ２に支持部材３０，３６を立設し、導体ワイヤ２６が長いときは、図１４（ｃ）で示すように、それに対応した大きさの第１平板電極１０を配置するので、対向間隔が短い凹部ｃ１，ｃ２に支持部材３０，３６を立設することにより、一台の直流プラズマＣＶＤ装置により各種長さ寸法の導体ワイヤ２６の表面に炭素膜を成膜することができる。   As shown in Embodiment 3 of FIG. 14, for example, recesses a1, a2; b1, b2; c1, c2 can be provided on the bottom surface of the vacuum chamber 2 so that the support members 30 and 36 can be erected. When 26 is short, as shown in FIG. 14 (a), the first plate electrode 10 having a size corresponding thereto is arranged, so that the support members 30 and 36 are erected in the recesses a1 and a2 having a short facing distance. When the conductor wire 26 is medium, as shown in FIG. 14 (b), the first plate electrode 10 having a size corresponding to the conductor wire 26 is disposed, so that the support members 30, When the conductor wire 26 is long, as shown in FIG. 14 (c), the first plate electrode 10 having a size corresponding to that is disposed, so that it is supported by the recesses c1 and c2 having a short facing distance. By erecting members 30 and 36 It is possible to form a carbon film on the surface of the conductor wires 26 of various length by a single DC plasma CVD apparatus.

なお、図１５の実施の形態４で示すように、第１、第２支持部Ａ，Ｂを配置する側の空間を平板電極１０，１２を配置する成膜用のプラズマ発生側の空間から隔離する隔離壁４９を設けることにより、プラズマ発生側空間を第２支持部Ａ，Ｂの配置空間から隔離することができる。   As shown in the fourth embodiment of FIG. 15, the space on the side where the first and second support portions A and B are arranged is isolated from the space on the plasma generation side for film formation where the plate electrodes 10 and 12 are arranged. By providing the separating wall 49, the plasma generation side space can be isolated from the arrangement space of the second support portions A and B.

本発明は、上述した実施の形態に限定されるものではなく、特許請求の範囲に記載した範囲内で、種々な変更ないしは変形を含むものである。   The present invention is not limited to the above-described embodiment, and includes various changes or modifications within the scope described in the claims.

図１は、本発明の実施の形態１に係る横置き型の直流プラズマＣＶＤ装置の概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a horizontal DC plasma CVD apparatus according to Embodiment 1 of the present invention. 図２は、図１の直流プラズマＣＶＤ装置の第１支持部の拡大図である。FIG. 2 is an enlarged view of a first support portion of the DC plasma CVD apparatus of FIG. 図３は、図１の直流プラズマＣＶＤ装置の第２支持部の拡大図である。FIG. 3 is an enlarged view of a second support portion of the DC plasma CVD apparatus of FIG. 図４は、図１の両平板電極の斜視図である。FIG. 4 is a perspective view of both flat plate electrodes of FIG. 図５は、図１の直流プラズマＣＶＤ装置を用いて導体ワイヤの表面に炭素膜を成膜する方法を示すための直流プラズマＣＶＤ装置の図である。FIG. 5 is a diagram of a DC plasma CVD apparatus for illustrating a method of forming a carbon film on the surface of a conductor wire using the DC plasma CVD apparatus of FIG. 図６は、図１の直流プラズマＣＶＤ装置の第１平板電極上のプラズマの発生形態を示す図である。FIG. 6 is a view showing a plasma generation form on the first plate electrode of the DC plasma CVD apparatus of FIG. 図７は、図１の直流プラズマＣＶＤ装置の第１平板電極上のプラズマの発生形態を示す図である。FIG. 7 is a view showing a plasma generation form on the first plate electrode of the DC plasma CVD apparatus of FIG. 図８（ａ）は、図１の直流プラズマＣＶＤ装置を用いて炭素膜が成膜された導体ワイヤを示す図、図８（ｂ）は図８（ａ）のＳ１−Ｓ１．Ｓ２−Ｓ２，Ｓ３−Ｓ３での導体ワイヤの断面図である。8A is a view showing a conductor wire on which a carbon film is formed using the DC plasma CVD apparatus of FIG. 1, and FIG. 8B is a view of S1-S1. It is sectional drawing of the conductor wire in S2-S2, S3-S3. 図９は、第１平板電極上の導体ワイヤによる等電位線の歪み状態を示す図である。FIG. 9 is a diagram showing a strain state of an equipotential line by a conductor wire on the first plate electrode. 図１０は、実施の形態で導体ワイヤの表面に炭素膜が形成されてなるワイヤ状陰極を組み込んだフィールドエミッション型ランプの一部を拡大して示す断面図である。FIG. 10 is an enlarged cross-sectional view of a part of a field emission lamp incorporating a wire-like cathode in which a carbon film is formed on the surface of a conductor wire in the embodiment. 図１１は、本発明の実施の形態２に係る縦置き型の直流プラズマＣＶＤ装置の概略構成を示す図である。FIG. 11 is a diagram showing a schematic configuration of a vertical DC plasma CVD apparatus according to Embodiment 2 of the present invention. 図１２は、図１１の直流プラズマＣＶＤ装置の第１支持部の拡大図である。FIG. 12 is an enlarged view of the first support portion of the DC plasma CVD apparatus of FIG. 図１３は、図１１の直流プラズマＣＶＤ装置の第２支持部の拡大図である。FIG. 13 is an enlarged view of the second support part of the DC plasma CVD apparatus of FIG. 図１４は、本発明の実施の形態３に係る横置き型の直流プラズマＣＶＤ装置の概略構成を示す図である。FIG. 14 is a diagram showing a schematic configuration of a horizontal DC plasma CVD apparatus according to Embodiment 3 of the present invention. 図１５は、本発明の実施の形態４に係る横置き型の直流プラズマＣＶＤ装置の概略構成を示す図である。FIG. 15 is a diagram showing a schematic configuration of a horizontal DC plasma CVD apparatus according to Embodiment 4 of the present invention. 図１６は、従来の直流プラズマＣＶＤ装置の概略構成を示す図である。FIG. 16 is a diagram showing a schematic configuration of a conventional DC plasma CVD apparatus. 図１７は、図１６の（Ｄ）−（Ｄ）線に沿う断面図である。17 is a cross-sectional view taken along line (D)-(D) in FIG. 図１８（ａ）（ｂ）（ｃ）は図１６の直流プラズマＣＶＤ装置で炭素膜が成膜されたワイヤ状陰極を組み込んだフィールドエミッション型ランプの一部を拡大して示す断面図である。18 (a), 18 (b), and 18 (c) are cross-sectional views showing an enlarged part of a field emission type lamp incorporating a wire-like cathode on which a carbon film is formed by the DC plasma CVD apparatus of FIG. 図１９（ａ）はワイヤ状陰極とその電界電子放出範囲と陽極とを示す図、図１９（ｂ）は導電性ワイヤの表面に炭素膜が成膜されてなるワイヤ状陰極の断面図、図１９（ｃ）はワイヤ状陰極をその成膜領域Ｘを陽極に向けて配置して電界電子放出している状態を示す図、図１９（ｄ）はワイヤ状陰極をその非成膜領域Ｙを陽極に向けて配置して電界電子放出している状態を示す図、図１９（ｅ）は導体ワイヤの表面全周に炭素膜が均等に成膜されているワイヤ状陰極の断面図である。FIG. 19A is a diagram showing a wire-like cathode, its field electron emission range, and anode, and FIG. 19B is a cross-sectional view of a wire-like cathode in which a carbon film is formed on the surface of a conductive wire. 19 (c) is a diagram showing a state in which a wire-like cathode is disposed with its film-forming region X facing the anode and field electrons are emitted, and FIG. 19 (d) is a diagram showing a wire-like cathode in its non-film-forming region Y. FIG. 19E is a cross-sectional view of a wire-like cathode in which a carbon film is uniformly formed on the entire surface of the conductor wire.

符号の説明Explanation of symbols

２ チャンバ
１０ 第１平板電極
１２ 第２平板電極
２８ 支持／駆動手段 2 Chamber 10 First plate electrode 12 Second plate electrode 28 Support / drive means

Claims (12)

真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、
両平板電極間に配置した導体ワイヤを回転させながら上記成膜することが可能になっている、ことを特徴とする直流プラズマＣＶＤ装置。 A film-forming plasma is generated by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside the vacuum chamber. A direct current plasma CVD apparatus for forming a film on a surface,
A direct current plasma CVD apparatus characterized in that the film formation can be performed while rotating a conductor wire disposed between both plate electrodes. 真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、
両平板電極間に導体ワイヤを支持し、かつ、支持した導体ワイヤを回転させる支持／駆動手段を備える、ことを特徴とする直流プラズマＣＶＤ装置。 A film-forming plasma is generated by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside the vacuum chamber. A direct current plasma CVD apparatus for forming a film on a surface,
A direct-current plasma CVD apparatus comprising a support / drive means for supporting a conductor wire between both plate electrodes and rotating the supported conductor wire. 真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、
導体ワイヤを直流電源の正電極側に接続される平板電極の電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させる支持／駆動手段を備える、ことを特徴とする直流プラズマＣＶＤ装置。 A film-forming plasma is generated by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside the vacuum chamber. A direct current plasma CVD apparatus for forming a film on a surface,
It is characterized by comprising support / driving means for supporting and rotating the conductor wire in a tensioned state so as not to sag at a position close to the electrode surface of the flat plate electrode connected to the positive electrode side of the DC power supply. DC plasma CVD equipment. 真空チャンバの内部に対向配置した一対の平板電極間に成膜用ガスの導入と成膜用直流電圧の印加とにより成膜用プラズマを発生することにより、両平板電極間に配置した導体ワイヤの表面に成膜する直流プラズマＣＶＤ装置であって、
直流電源の正電極側に接続される平板電極の電極面を平面視で矩形形状の電極面（第１電極面）となし、導体ワイヤを上記第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転させる支持／駆動手段を備える、ことを特徴とする直流プラズマＣＶＤ装置。 A film-forming plasma is generated by introducing a film-forming gas and applying a film-forming DC voltage between a pair of plate electrodes arranged opposite to each other inside the vacuum chamber. A direct current plasma CVD apparatus for forming a film on a surface,
The electrode surface of the flat plate electrode connected to the positive electrode side of the DC power supply is a rectangular electrode surface (first electrode surface) in plan view so that the conductor wire does not sag at a position close to the first electrode surface. A direct-current plasma CVD apparatus comprising support / drive means for supporting and rotating in a tensioned state. 真空チャンバの内部に炭素膜成膜用ガスを導入し、かつ、対向する一対の平板電極間に炭素膜成膜用直流電圧を印加することにより成膜用プラズマを発生させて、両平板電極間に配置した導体ワイヤの表面に炭素膜を成膜する直流プラズマＣＶＤ装置であって、
上記直流電源の正電極側に接続される平板電極の電極面を平面視で矩形形状の電極面（第１電極面）となし、
導体ワイヤを上記第１電極面上に近接した位置でたるまないようテンションをかけた状態で支持して回転駆動させる支持／駆動手段を備える、ことを特徴とする直流プラズマＣＶＤ装置。 A film forming plasma is generated by introducing a carbon film forming gas into a vacuum chamber and applying a DC voltage for carbon film forming between a pair of opposed flat plate electrodes. A direct current plasma CVD apparatus for forming a carbon film on the surface of the conductor wire disposed in
The electrode surface of the flat plate electrode connected to the positive electrode side of the DC power source is a rectangular electrode surface (first electrode surface) in plan view,
A direct-current plasma CVD apparatus comprising: support / drive means for supporting and rotating the conductor wire in a tensioned state so as not to sag at a position close to the first electrode surface. 真空チャンバの内部に炭素膜成膜用のガスを導入し、かつ、対向する一対の平板電極間に炭素膜成膜用直流電圧を印加することにより成膜用プラズマを発生させて、両平板電極間に配置した導体ワイヤの表面に炭素膜を成膜する直流プラズマＣＶＤ装置であって、
直流電源の正電極側に接続される平板電極が平面視で長方形形状をなす電極面（第１電極面）を備え、
導体ワイヤに、上記成膜に際して、上記第１電極面上に近接した位置でかつこの電極面の長手方向に沿ってテンションをかけた状態で支持して回転させる支持／駆動手段を備える、ことを特徴とする直流プラズマＣＶＤ装置。 A gas for forming a carbon film is introduced into the vacuum chamber, and a plasma for film formation is generated by applying a DC voltage for forming a carbon film between a pair of opposed flat plate electrodes. A direct current plasma CVD apparatus for forming a carbon film on the surface of a conductor wire disposed therebetween,
The flat plate electrode connected to the positive electrode side of the DC power supply includes an electrode surface (first electrode surface) having a rectangular shape in plan view,
The conductor wire is provided with support / drive means for supporting and rotating the conductor wire at a position close to the first electrode surface and in a tensioned state along the longitudinal direction of the electrode surface during the film formation. A direct current plasma CVD apparatus. 真空チャンバの内部に炭素膜成膜用ガスを導入し、かつ、対向する一対の平板電極間に炭素膜成膜用直流電圧を印加することにより成膜用プラズマを発生させて、両平板電極間に配置した導体ワイヤの表面に炭素膜を成膜する直流プラズマＣＶＤ装置であって、
両平板電極を共に同形状の長方形形状の電極面となし、
導体ワイヤを、上記成膜に際して両平板電極のうち直流電源の正電極側に接続される平板電極の電極面（第１電極面）上に近接した位置でたるまないようテンションをかけた状態で上記第１電極面の長手方向に沿って支持して回転させる支持／駆動手段を備える、ことを特徴とする直流プラズマＣＶＤ装置。 A film forming plasma is generated by introducing a carbon film forming gas into a vacuum chamber and applying a DC voltage for carbon film forming between a pair of opposed flat plate electrodes. A direct current plasma CVD apparatus for forming a carbon film on the surface of the conductor wire disposed in
Both flat plate electrodes have the same rectangular electrode surface,
The conductor wire is tensioned so that it does not sag at a position close to the electrode surface (first electrode surface) of the plate electrode connected to the positive electrode side of the DC power source among the two plate electrodes during the film formation. A direct-current plasma CVD apparatus comprising: support / driving means for supporting and rotating along the longitudinal direction of the first electrode surface. 上記支持／駆動手段が、導体ワイヤの両端それぞれを支持する第１支持部と第２支持部とを備え、両支持部の配置間隔が平板電極の大きさに合わせて調整可能になっていることを特徴とする請求項２ないし７のいずれかに記載の直流プラズマＣＶＤ装置。   The support / drive means includes a first support portion and a second support portion that support both ends of the conductor wire, and the arrangement interval between the both support portions can be adjusted according to the size of the plate electrode. A direct-current plasma CVD apparatus according to any one of claims 2 to 7. 真空チャンバ内部に平板電極の配置空間を上記支持／駆動手段の少なくとも一部の配置空間から隔離する隔離壁を設けたことを特徴とする請求項２ないし８のいずれかに記載の直流プラズマＣＶＤ装置。   9. The direct current plasma CVD apparatus according to claim 2, wherein an isolation wall is provided in the vacuum chamber to isolate the arrangement space of the plate electrode from at least a part of the arrangement space of the support / drive means. . 上記平板電極の電極面形状が、短辺が１０−３０ｍｍ、長辺が１２０−２２０ｍｍの長方形形状である、ことを特徴とする請求項１ないし９のいずれかに記載の直流プラズマＣＶＤ装置。   10. The direct current plasma CVD apparatus according to claim 1, wherein an electrode surface shape of the flat plate electrode is a rectangular shape having a short side of 10-30 mm and a long side of 120-220 mm. 請求項２ないし１０のいずれかに記載の直流プラズマＣＶＤ装置を用いて導体ワイヤの表面に成膜する成膜方法であって、上記成膜に際しては、支持／駆動手段により、平板電極上に導体ワイヤを支持するとともに該導体ワイヤを回転駆動する、ことを特徴とする成膜方法。   A film forming method for forming a film on the surface of a conductor wire using the DC plasma CVD apparatus according to claim 2, wherein the conductor is formed on the flat plate electrode by a support / drive means. A film forming method characterized by supporting a wire and rotationally driving the conductor wire. 請求項１１に記載の成膜方法により炭素膜が成膜されてなるフィールドエミッション型ランプ用ワイヤ状陰極。   A wire-like cathode for a field emission lamp, comprising a carbon film formed by the film forming method according to claim 11.
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JPH09320352A (en) * 1996-05-24 1997-12-12 Nissin Electric Co Ltd Electric wire and its manufacture
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JPS63176473A (en) * 1987-01-17 1988-07-20 Sumitomo Electric Ind Ltd Method and device for forming thin film continuously on long-sized body
JPH09320352A (en) * 1996-05-24 1997-12-12 Nissin Electric Co Ltd Electric wire and its manufacture
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102978582A (en) * 2012-11-26 2013-03-20 厦门钨业股份有限公司 Production device of pure tungsten capillary tube

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