JP2007119870A - Plasma film deposition system - Google Patents

Plasma film deposition system Download PDF

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JP2007119870A
JP2007119870A JP2005315249A JP2005315249A JP2007119870A JP 2007119870 A JP2007119870 A JP 2007119870A JP 2005315249 A JP2005315249 A JP 2005315249A JP 2005315249 A JP2005315249 A JP 2005315249A JP 2007119870 A JP2007119870 A JP 2007119870A
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plasma
gas
forming apparatus
film
film forming
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JP4717591B2 (en
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Satoshi Okada
智 岡田
Makoto Yoshida
吉田　　誠
Chikashi Shinno
史 新野
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma film deposition system capable of depositing a uniform super-water-repellent film. <P>SOLUTION: Regarding the film deposition system where, using plasma with a columnar or strip-like shape in which the axial central part 31a has higher density distribution than that in the peripheral part 31, a substrate 28 is film-deposited by vapor deposition or polymerization in an atmosphere where pressure is high and the diffusion of gas is reduced, a gas tube 27 of feeding reaction gas 32 is plurally branched, the injection ports of the branched gas tubes are arranged in such a manner that gas flows are injected toward the peripheral part of the axial center of the plasma, and also, an enclosure 36 is installed in the substrate so as to cover the same from the back face side of the film deposition face 33. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、超撥水性を有する撥水膜を成膜するためのプラズマ成膜装置に関するものである。   The present invention relates to a plasma film forming apparatus for forming a water repellent film having super water repellency.

図１０は従来例の成膜装置の断面を示す図である。プラズマ発生源１と成膜室５が中間電極Ｇ１、Ｇ２と陽極４を介して接続されている。Ｇ１、Ｇ２、４はオリフィス形状のプラズマ導入口を持ち、Ｇ１、Ｇ２はそれぞれ抵抗１４、１５を介して電源６の正極に電気的に接続されている。   FIG. 10 is a view showing a cross section of a conventional film forming apparatus. The plasma generation source 1 and the film forming chamber 5 are connected via the intermediate electrodes G1 and G2 and the anode 4. G1, G2, and 4 have orifice-shaped plasma inlets, and G1 and G2 are electrically connected to the positive electrode of the power source 6 through resistors 14 and 15, respectively.

成膜室５が排気装置（図示せず）によって排気された後、例えばアルゴンＡｒのような不活性ガス９がプラズマ発生源１に導入される。電源６によって電圧が印加されるとプラズマ発生源１内にプラズマ１０が発生する。プラズマ１０は中間電極Ｇ１、中間電極Ｇ２、陽極４のオリフィスを通して成膜室５内に導入されるが、空間で反転し陽極４に戻る。またプラズマが引き出される部分１１、１１ａを挟んでガス管７と基板８が配置されている。   After the film formation chamber 5 is evacuated by an exhaust device (not shown), an inert gas 9 such as argon Ar is introduced into the plasma generation source 1. When a voltage is applied by the power source 6, plasma 10 is generated in the plasma generation source 1. The plasma 10 is introduced into the film forming chamber 5 through the orifices of the intermediate electrode G 1, the intermediate electrode G 2, and the anode 4. Further, the gas pipe 7 and the substrate 8 are arranged with the portions 11 and 11a from which the plasma is extracted interposed therebetween.

成膜はプラズマの引き出された部分１１、１１ａを用いて行われる。例えば、ＨＭＤＳＯ（ヘキサメチルジシロキサン）のような反応ガス１２がガス管７から導入されると、プラズマの引き出された部分１１、１１ａによって分解又は重合される。そして、基板８上にＳｉ系保護膜１３などの機能性薄膜が成膜される。   Film formation is performed using the portions 11 and 11a from which plasma is extracted. For example, when a reaction gas 12 such as HMDSO (hexamethyldisiloxane) is introduced from the gas pipe 7, it is decomposed or polymerized by the portions 11 and 11a from which the plasma is extracted. Then, a functional thin film such as a Si-based protective film 13 is formed on the substrate 8.

例えば、特許文献１において低分子フッ素化合物を用いた撥水膜の成膜の例が示されている。
特開２０００−３４００１５号公報 For example, Patent Document 1 shows an example of forming a water-repellent film using a low molecular fluorine compound.
JP 2000-340015 A

しかし、上記従来例においては、高圧雰囲気下で成膜を行うとき膜の均一性が悪かった。すなわち、撥水膜を成膜するとモノマーの噴出し口の直上に白濁部分が生じ、その部分は超撥水性を示すものの、周辺部は撥水性が得られなかった。   However, in the above conventional example, the film uniformity is poor when the film is formed in a high-pressure atmosphere. That is, when a water-repellent film was formed, a cloudy portion was formed immediately above the outlet of the monomer, and the portion showed super water repellency, but the peripheral portion could not obtain water repellency.

原因は、成膜装置に導入されるプラズマと成膜の原料となるモノマーの分布が関係していると思われる。図８にその正面配置図を示す。本成膜装置に用いられているプラズマ発生源は高密度のプラズマを発生することができるが、そのプラズマは強度分布を持っている。プラズマ軸中心の部分１１ａは高密度、かつ高エネルギーであり、その周辺部１１になるにつれて低くなる。   The cause seems to be related to the plasma introduced into the film forming apparatus and the distribution of the monomer as the film forming raw material. FIG. 8 shows a front layout view thereof. The plasma generation source used in this film forming apparatus can generate high-density plasma, but the plasma has an intensity distribution. The portion 11a at the center of the plasma axis has a high density and a high energy, and becomes lower as the peripheral portion 11 is formed.

プラズマの水平方向の強度分布を定性的に表すと図９の１７のようになる。一方、モノマーはガス管７によって基板８に向かって噴出される。ところが、圧力が高い場合には、基板付近のガス分布は１８のように不均一性を生じる。これは圧力が高いと気体分子の拡散が少なくなり、ガス濃度の均一化が進行しないためだと考えられる。そして、１７と１８の相乗効果により、基板付近のガス濃度＋プラズマ密度＝反応量であり、膜の分布は１６のようになり、膜１９の中心は反応量が多いため超撥水性を示すが白濁部分２０となり、周辺部は反応が少なく撥水性が低くなる。一方、現在の装置配置では、全体のプラズマ密度を下げるか、圧力を下げると超撥水性が得られなかった。超撥水性を得るためには、高いプラズマ密度と高圧条件は不可欠である。   The intensity distribution in the horizontal direction of the plasma is qualitatively expressed as 17 in FIG. On the other hand, the monomer is ejected toward the substrate 8 by the gas pipe 7. However, when the pressure is high, the gas distribution in the vicinity of the substrate is uneven as shown by 18. This is thought to be due to the fact that when the pressure is high, the diffusion of gas molecules decreases and the gas concentration does not progress uniformly. Then, due to the synergistic effect of 17 and 18, the gas concentration in the vicinity of the substrate + plasma density = reaction amount, the distribution of the film becomes 16, and the center of the film 19 shows a super water repellency because the reaction amount is large. The cloudy portion 20 is formed, and there is little reaction in the peripheral portion, resulting in low water repellency. On the other hand, with the current apparatus arrangement, super water repellency could not be obtained if the overall plasma density was lowered or the pressure was lowered. In order to obtain super water repellency, high plasma density and high pressure conditions are indispensable.

本発明は、以上の点に着目してなされたもので均一な超撥水膜を成膜することができるプラズマ成膜装置を提供することを目的とする。   The present invention has been made paying attention to the above points, and an object thereof is to provide a plasma film forming apparatus capable of forming a uniform super water-repellent film.

本発明は、上述の目的を達成するため、以下（１）〜（６）の構成を備えるものである。   In order to achieve the above-mentioned object, the present invention comprises the following configurations (1) to (6).

（１）円柱状又は短冊状で軸中心部が周辺部よりも密度が高い分布をもつプラズマを用い、圧力が高く気体の拡散が少ない雰囲気下で気相成長もしくは重合により基板に成膜を行う成膜装置において、反応ガスを供給するガス管が複数に分岐され、該分岐されたガス管の噴出口はガス流が該プラズマの軸中心の周辺部に向かって噴出されるように配置され、かつ、該基板は成膜面の背面側から覆われるように囲いが設置されていることを特徴とするプラズマ成膜装置。   (1) A film is formed on a substrate by vapor phase growth or polymerization in an atmosphere of high pressure and low gas diffusion, using a plasma having a cylindrical shape or a strip shape and having a density in which the central part of the shaft is higher in density than the peripheral part. In the film forming apparatus, a gas pipe for supplying a reaction gas is branched into a plurality of gas pipes, and a jet outlet of the branched gas pipe is arranged so that a gas flow is jetted toward the periphery of the plasma axis center, In addition, the plasma film forming apparatus is characterized in that the substrate is provided with an enclosure so as to be covered from the back side of the film forming surface.

（２）前記基板の囲いが台形、若しくはおわん型の形状を有することを特徴とする前記（１）記載のプラズマ成膜装置。   (2) The plasma film forming apparatus according to (1), wherein the enclosure of the substrate has a trapezoidal shape or a bowl shape.

（３）前記分岐ガス管は、この分岐ガス管の噴出口の列がプラズマ断面の水平中心軸に平行になるように配置されていることを特徴とする前記（１）記載のプラズマ成膜装置。   (3) The plasma film forming apparatus according to (1), wherein the branch gas pipe is arranged so that a row of outlets of the branch gas pipe is parallel to a horizontal central axis of a plasma cross section. .

（４）異なる複数の前記反応ガスを同時に導入するために、複数の前記分岐ガス管が配置されていることを特徴とする前記（１）乃至前記（３）いずれか記載のプラズマ成膜装置。   (4) The plasma film forming apparatus according to any one of (1) to (3), wherein a plurality of branch gas pipes are arranged to simultaneously introduce a plurality of different reaction gases.

（５）前記複数の反応ガスとしてヘキサメチルジシロキサン、メタン、アセチレン、四フッ化炭素の少なくとも１種類以上の被反応ガスと、酸素、水素、フッ素の少なくとも１種類以上の反応促進ガスを用いることを特徴とする前記（４）記載のプラズマ成膜装置。   (5) As the plurality of reaction gases, at least one reaction gas of hexamethyldisiloxane, methane, acetylene, and carbon tetrafluoride and at least one reaction promotion gas of oxygen, hydrogen, and fluorine are used. (4) The plasma film forming apparatus according to (4).

（６）前記分岐ガス管は、この分岐ガス管の噴出口の列が複数の異なる垂直面内に垂直に配置されたことを特徴とする前記（１）又は前記（４）記載のプラズマ成膜装置。   (6) The plasma film formation according to (1) or (4), wherein the branch gas pipe has a row of outlets of the branch gas pipe arranged vertically in a plurality of different vertical planes. apparatus.

本発明によれば、均一な超撥水膜を成膜することができるプラズマ成膜装置を提供することが可能となる。   ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the plasma film-forming apparatus which can form a uniform super water-repellent film.

以下、本発明を実施するための最良の形態を、実施例により詳しく説明する。   Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to examples.

図１は本発明による成膜装置の断面を示す図である。プラズマ発生源２１と成膜室２５が中間電極Ｇ３、Ｇ４と陽極２４を介して接続されている。Ｇ３、Ｇ４、２４はオリフィス形状の導入口を持ち、Ｇ３、Ｇ４はそれぞれ抵抗３４、３５を介して電源２６の正極に接続されている。プラズマの引き出し部分３１、３１ａを挟んでガス管２７と被成膜基材２８が配置されている。そして、２７は二つに分岐している。２８は囲い３６によって成膜面の反対面の表面近傍が囲われている。   FIG. 1 is a cross-sectional view of a film forming apparatus according to the present invention. The plasma generation source 21 and the film forming chamber 25 are connected via intermediate electrodes G3 and G4 and an anode 24. G3, G4, and 24 have orifice-shaped inlets, and G3 and G4 are connected to the positive electrode of the power source 26 through resistors 34 and 35, respectively. A gas tube 27 and a film-forming substrate 28 are disposed with the plasma extraction portions 31 and 31a interposed therebetween. And 27 is branched into two. 28 is surrounded by the enclosure 36 in the vicinity of the surface opposite to the film formation surface.

図２に正面配置図を示す。ガス管２７と被成膜基材２８の間にプラズマの引き出し部分３１、３１ａが挟まれており、ガス管２７の各々の噴出口は３１に向かって配置されている。また、ガス管２７の列は３１ａのプラズマ中心軸と直角になるように配置されることが望ましい。なお、３１ａの直径は約５ｃｍ以下なので、ガス管２７の二つの噴出口の間隔は５ｃｍ以上であることが適当である。囲い３６の大きさは、横方向の幅３６ａと取り付けた基板表面からの囲いの深さ３６ｂとの関係が、３６ａ：３６ｂ＝５：１以上であることが望ましい（図４参照）。   FIG. 2 shows a front layout view. Plasma extraction portions 31 and 31 a are sandwiched between the gas pipe 27 and the film-forming substrate 28, and the respective outlets of the gas pipe 27 are arranged toward 31. Further, it is desirable that the rows of gas tubes 27 are arranged so as to be perpendicular to the plasma central axis 31a. In addition, since the diameter of 31a is about 5 cm or less, it is suitable that the space | interval of the two jet nozzles of the gas pipe 27 is 5 cm or more. The size of the enclosure 36 is preferably such that the relationship between the lateral width 36a and the enclosure depth 36b from the attached substrate surface is 36a: 36b = 5: 1 or more (see FIG. 4).

プラズマは次のように生成される。成膜室２５が排気装置（図示せず）によって排気された後、例えばアルゴンＡｒのような不活性ガス２９が導入される。２６によって電圧が印加されるとプラズマ発生源２１内にプラズマ３０が生成される。プラズマ３０はＧ３、Ｇ４、２４のオリフィスを通して成膜室２５内に導入されるが、空間で反転して陽極２４に戻る。成膜は３１、３１ａを用いて行われる。例えば、ＨＭＤＳＯのような反応ガス３２がガス管２７から導入されると３１、３１ａによって分解又は重合される。そして、基材２８上にＳｉ系保護膜３３などの機能性薄膜が成膜される。   The plasma is generated as follows. After the film formation chamber 25 is evacuated by an exhaust device (not shown), an inert gas 29 such as argon Ar is introduced. When a voltage is applied by 26, a plasma 30 is generated in the plasma generation source 21. The plasma 30 is introduced into the film forming chamber 25 through the orifices G3, G4, and 24, but reverses in the space and returns to the anode 24. Film formation is performed using 31 and 31a. For example, when a reaction gas 32 such as HMDSO is introduced from the gas pipe 27, it is decomposed or polymerized by 31, 31a. Then, a functional thin film such as a Si-based protective film 33 is formed on the substrate 28.

本発明によって、膜の均一性が向上し、ガス噴出口直上の基板の白濁を防ぐことができ、１５０×１５０ｃｍ２の平面内で超撥水膜が得られた。 According to the present invention, the uniformity of the film is improved, the white turbidity of the substrate immediately above the gas jetting port can be prevented, and a super water-repellent film is obtained in a 150 × 150 cm 2 plane.

図５に本発明による成膜装置の正面配置図を示し、発明の原理を説明する。成膜プロセスは次のようなものと考えられる。分岐されたガス管２７から噴出されたＨＭＤＳＯモノマーガスがアルゴンプラズマの周辺部３１に向かって噴出されると、囲い３６によってガス溜り３８が基板近傍に形成される。そして、ガス溜り３８とプラズマの周辺部３１の表面反応により、基板２８上に膜３３が成膜される。   FIG. 5 shows a front layout of the film forming apparatus according to the present invention, and the principle of the invention will be described. The film formation process is considered as follows. When the HMDSO monomer gas ejected from the branched gas pipe 27 is ejected toward the peripheral portion 31 of the argon plasma, a gas reservoir 38 is formed in the vicinity of the substrate by the enclosure 36. A film 33 is formed on the substrate 28 by the surface reaction between the gas reservoir 38 and the peripheral portion 31 of the plasma.

今、ガス濃度、プラズマ密度及び膜分布の関係をみると、水平方向に係る噴出されるガスの濃度分布４２はガス噴出口の数を反映して二つ凸の形状を示す。本発明によるガス溜りの形成によりガス濃度の不均一性が改善され４０のようになる。さらに、中心部に凸であるプラズマ密度４１と重ね合わせることによって反応量が均一化され、平坦な形状の膜分布３９、４３になると考えられる。   Now, looking at the relationship between the gas concentration, the plasma density, and the film distribution, the concentration distribution 42 of the gas to be ejected in the horizontal direction shows a two-convex shape reflecting the number of gas ejection ports. The formation of the gas reservoir according to the present invention improves the non-uniformity of the gas concentration to 40. Furthermore, it is considered that the reaction amount is made uniform by superimposing the plasma density 41 that is convex in the center, and the film distributions 39 and 43 have flat shapes.

実施例１ではガス管は２本に分岐されていたが、図３のように反応ガスが４本以上のガス管に分岐して供給されるプラズマ成膜装置であってもよい。この際、ガス管の直上にプラズマの中心部分３１ａが配置されないようにすることが重要である。なお、３１、３１ａの断面形状は円形でも矩形でもよい。   In the first embodiment, the gas pipe is branched into two. However, as shown in FIG. 3, it may be a plasma film forming apparatus in which the reactive gas is branched and supplied to four or more gas pipes. At this time, it is important that the central portion 31a of the plasma is not disposed immediately above the gas pipe. In addition, the cross-sectional shape of 31 and 31a may be circular or a rectangle.

図４のように反応ガスが２種類以上のプラズマ成膜装置であってもよい。また、ヘキサメチルジシロキサンＨＭＤＳＯのガスが、メタンＣＨ４、アセチレンＣ２Ｈ２、酸素Ｏ２、水素Ｈ２、四フッ化炭素ＣＦ４のガスであるプラズマ成膜装置であってもよい。 As shown in FIG. 4, a plasma film forming apparatus having two or more kinds of reactive gases may be used. Further, a plasma film forming apparatus in which the gas of hexamethyldisiloxane HMDSO is a gas of methane CH 4 , acetylene C 2 H 2 , oxygen O 2 , hydrogen H 2 , or carbon tetrafluoride CF 4 may be used.

実施例１では、囲い３６が台形状のものであったが、お椀型のようなものであるプラズマ成膜装置であってもよい。   In the first embodiment, the enclosure 36 has a trapezoidal shape. However, a plasma film forming apparatus having a bowl shape may be used.

実施例２の４本に分岐されたガス管の噴出口は、図３では同一垂直面内に配置されているが、例えば図７のように異なる垂直面内に垂直に配置されるプラズマ成膜装置であってもよい。こうすることで、より効率的、かつ三次元的に反応ガスを分散させることが可能となる。   In FIG. 3, the nozzles of the gas pipe branched into four in Example 2 are arranged in the same vertical plane. For example, as shown in FIG. 7, plasma film deposition is arranged vertically in different vertical planes. It may be a device. By doing so, it becomes possible to disperse the reaction gas more efficiently and three-dimensionally.

本発明に係る成膜装置を示す図である。It is a figure which shows the film-forming apparatus which concerns on this invention. 本発明に係る成膜装置の正面配置図である。1 is a front layout view of a film forming apparatus according to the present invention. 本発明の実施例２に係る成膜装置の正面配置図である。It is a front arrangement | positioning figure of the film-forming apparatus which concerns on Example 2 of this invention. 本発明の実施例３に係る成膜装置の正面配置図である。It is a front arrangement | positioning figure of the film-forming apparatus which concerns on Example 3 of this invention. 本発明に係る成膜装置の正面配置図である。1 is a front layout view of a film forming apparatus according to the present invention. 本発明に係る成膜装置のプラズマ及びモノマーガスの強度分布及び濃度分布を示す図である。It is a figure which shows the intensity distribution and density distribution of plasma and monomer gas of the film-forming apparatus which concerns on this invention. 本発明の実施例５に係る成膜装置を示す図である。It is a figure which shows the film-forming apparatus which concerns on Example 5 of this invention. 従来例に係る成膜装置の正面配置図である。It is a front arrangement | positioning figure of the film-forming apparatus which concerns on a prior art example. 従来例に係る成膜装置のプラズマ及びモノマーガスの強度分布及び濃度分布を示す図である。It is a figure which shows the intensity distribution and density distribution of plasma and monomer gas of the film-forming apparatus which concerns on a prior art example. 従来例に係る成膜装置の断面を示す図である。It is a figure which shows the cross section of the film-forming apparatus which concerns on a prior art example.

符号の説明Explanation of symbols

１ プラズマ発生源
４ 陽極
５ 成膜室
６ 電源
７ ガス管
８ 基板
９ 不活性ガス
１０ プラズマ
１１ 引き出されたプラズマの周辺部
１１ａ 引き出されたプラズマの中心部
１２ 反応ガス
１３ Ｓｉ系保護膜
１４ 抵抗
１５ 抵抗
１６ 従来例における膜の分布
１７ 従来例におけるプラズマの水平方向の強度分布
１８ 従来例における基板付近のモノマーガスの濃度分布
１９ 膜
２０ 白濁部分
２１ プラズマ発生源
２４ 陽極
２５ 成膜室
２６ 電源
２７ 分岐されたガス管
２８ 基板
２９ 不活性ガス
３１ アルゴンプラズマの周辺部
３１ａ アルゴンプラズマの中心部
３２ 反応ガス
３３ 膜
３４ 抵抗
３５ 抵抗
３６ 囲い
３６ａ 囲いの横方向の幅
３６ｂ 囲いの深さ
３８ ガス溜り
３９ 本発明に係る膜の分布
４０ 本発明に係る改善されたモノマーガスの濃度分布
４１ 本発明に係るプラズマの水平方向の強度分布
４２ 本発明に係るモノマーガスの濃度分布
４３ 平坦な形状の膜分布
Ｇ１ 中間電極
Ｇ２ 中間電極
Ｇ３ 中間電極
Ｇ４ 中間電極 DESCRIPTION OF SYMBOLS 1 Plasma generation source 4 Anode 5 Film-forming chamber 6 Power supply 7 Gas tube 8 Substrate 9 Inert gas 10 Plasma 11 The peripheral part 11a of the extracted plasma 12 The central part of the extracted plasma 12 Reactive gas 13 Si-based protective film 14 Resistance 15 Resistance 16 Distribution of film in conventional example 17 Intensity distribution in plasma horizontal direction in conventional example 18 Concentration distribution of monomer gas near substrate in conventional example 19 Film 20 Cloudy portion 21 Plasma generation source 24 Anode 25 Deposition chamber 26 Power supply 27 Branch Gas tube 28 Substrate 29 Inert gas 31 Peripheral portion 31a of argon plasma 32 Central portion of argon plasma 32 Reaction gas 33 Film 34 Resistance 35 Resistance 36 Enclosure 36a Enclosure lateral width 36b Enclosure depth 38 Gas reservoir 39 Membrane distribution 40 according to the invention Improved monomer gas concentration distribution 41 according to the invention Horizontal intensity distribution 42 present film distribution G1 intermediate electrode G2 intermediate electrode G3 intermediate electrode G4 intermediate electrode density distribution 43 flat shape of monomer gas according to the invention of a plasma according to

Claims (6)

円柱状又は短冊状で軸中心部が周辺部よりも密度が高い分布をもつプラズマを用い、圧力が高く気体の拡散が少ない雰囲気下で気相成長もしくは重合により基板に成膜を行う成膜装置において、反応ガスを供給するガス管が複数に分岐され、該分岐されたガス管の噴出口はガス流が該プラズマの軸中心の周辺部に向かって噴出されるように配置され、かつ、該基板は成膜面の背面側から覆われるように囲いが設置されていることを特徴とするプラズマ成膜装置。   A film-forming apparatus that uses a plasma with a distribution that is cylindrical or strip-shaped and whose axial center part has a higher density than the peripheral part, and that forms a film on a substrate by vapor phase growth or polymerization in an atmosphere with high pressure and low gas diffusion The gas pipe for supplying the reaction gas is branched into a plurality of gas outlets, and the outlets of the branched gas pipes are arranged so that the gas flow is jetted toward the periphery of the axial center of the plasma, and A plasma film forming apparatus, wherein the substrate is provided with an enclosure so as to be covered from the back side of the film forming surface. 前記基板の囲いが台形、若しくはおわん型の形状を有することを特徴とする請求項１記載のプラズマ成膜装置。   2. The plasma film forming apparatus according to claim 1, wherein the enclosure of the substrate has a trapezoidal shape or a bowl shape. 前記分岐ガス管は、この分岐ガス管の噴出口の列がプラズマ断面の水平中心軸に平行になるように配置されていることを特徴とする請求項１記載のプラズマ成膜装置。   2. The plasma film-forming apparatus according to claim 1, wherein the branch gas pipe is arranged so that a row of outlets of the branch gas pipe is parallel to a horizontal central axis of a plasma cross section. 異なる複数の前記反応ガスを同時に導入するために、複数の前記分岐ガス管が配置されていることを特徴とする請求項１乃至請求項３いずれか記載のプラズマ成膜装置。   The plasma film forming apparatus according to any one of claims 1 to 3, wherein a plurality of the branch gas pipes are arranged to simultaneously introduce a plurality of different reaction gases. 前記複数の反応ガスとしてヘキサメチルジシロキサン、メタン、アセチレン、四フッ化炭素の少なくとも１種類以上の被反応ガスと、酸素、水素、フッ素の少なくとも１種類以上の反応促進ガスを用いることを特徴とする請求項４記載のプラズマ成膜装置。   It is characterized by using at least one reaction gas of at least one of hexamethyldisiloxane, methane, acetylene and carbon tetrafluoride and at least one reaction promoting gas of oxygen, hydrogen and fluorine as the plurality of reaction gases. The plasma film forming apparatus according to claim 4. 前記分岐ガス管は、この分岐ガス管の噴出口の列が複数の異なる垂直面内に垂直に配置されたことを特徴とする請求項１又は請求項４記載のプラズマ成膜装置。   5. The plasma film forming apparatus according to claim 1, wherein the branch gas pipe has a row of jet outlets of the branch gas pipe arranged vertically in a plurality of different vertical planes.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014070233A (en) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd Filming apparatus, gas-barrier laminate, and optical member
JP5982570B2 (en) * 2013-05-31 2016-08-31 本田技研工業株式会社 Carbon coating cleaning method and apparatus
CN115142024A (en) * 2021-03-31 2022-10-04 住友重机械工业株式会社 Film forming apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104646A (en) * 1986-10-20 1988-05-10 Canon Inc Film forming device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104646A (en) * 1986-10-20 1988-05-10 Canon Inc Film forming device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014070233A (en) * 2012-09-28 2014-04-21 Toppan Printing Co Ltd Filming apparatus, gas-barrier laminate, and optical member
JP5982570B2 (en) * 2013-05-31 2016-08-31 本田技研工業株式会社 Carbon coating cleaning method and apparatus
US10273581B2 (en) 2013-05-31 2019-04-30 Honda Motor Co., Ltd. Carbon-coating-film cleaning method and device
CN115142024A (en) * 2021-03-31 2022-10-04 住友重机械工业株式会社 Film forming apparatus

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