JP2007083337A - Surface polishing device - Google Patents

Surface polishing device Download PDF

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JP2007083337A
JP2007083337A JP2005274707A JP2005274707A JP2007083337A JP 2007083337 A JP2007083337 A JP 2007083337A JP 2005274707 A JP2005274707 A JP 2005274707A JP 2005274707 A JP2005274707 A JP 2005274707A JP 2007083337 A JP2007083337 A JP 2007083337A
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pad
polishing
surface plate
polishing pad
workpiece
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JP4614851B2 (en
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Hitoshi Nagayama
仁志 長山
Toshikuni Shimizu
俊邦 清水
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SpeedFam Co Ltd
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SpeedFam Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a surface polishing device which improves working accuracy by preventing a workpiece and a polishing pad from repeatedly contacting with each other in the same patterns or following the same working trace and also suppresses crashes or scratches of a carrier due to vibration or flopping of the carrier. <P>SOLUTION: A pad sticking surface 8 and a polishing pad 12 of a lower surface plate 2 among upper and lower surface plates 1 and 2 are formed to be concentric with a rotation center O1 of the lower surface plate 2. In addition, a pad sticking surface 7 and a polishing pad 11 of the upper surface plate 1 are formed to occupy a position eccentric from the rotation center O1 of the upper surface plate 1 and to have a smaller outer diameter and a larger inner diameter than those of the pad sticking surface 7 and the polishing pad 12 of the lower surface plate 2. Further, the workpiece W is made to overhang at both inner and outer peripheral sides of the polishing pad 11 of the upper surface plate 1 among the upper and lower plates 1 and 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、高精度な平行度及び平坦度を必要とするワークを研磨するための平面研磨装置に関するものである。   The present invention relates to a planar polishing apparatus for polishing a workpiece that requires high precision parallelism and flatness.

半導体ウエハやフォトマスク等に用いられるガラスウエハあるいはセラミックスウエハなどの薄板状をしたワークの表面を研磨加工する場合、ポリッシング装置等の平面研磨装置が使用される。この平面研磨装置は、一般に、図７に示すように、円環状をした盤面に研磨パッド２６を貼着した上下の定盤２１，２２と、下定盤２２の中央に位置するサンギア２３と、該下定盤２２の外周を取り囲むように位置するインターナルギア２４と、下定盤２２上に位置してこれら両ギア２３，２４に噛合する複数のキャリヤ２５とを有し、各キャリヤ２５のワーク保持孔２５ａ内にワークＷを嵌合、保持させ、上記サンギア２３を回転させるか又はサンギア２３とインターナルギア２４の両方を回転させて各キャリヤ２５をサンギア２３の回りで自転及び公転させると共に、研磨液を供給しながら、回転する上下の定盤２１，２２で上記ワークＷの表裏面を研磨加工するものである。このとき、上記キャリヤ２５に保持されたワークＷは、該キャリヤ２５の自転に伴って該キャリヤ２５の中心の回りを回転すると共に、該キャリヤ２５の公転に伴ってサンギア２３の回りを回転し、回転する上下の定盤２１，２２の研磨パッド２６に押し付けられて研磨されることになる。   When polishing the surface of a thin plate-like workpiece such as a glass wafer or a ceramic wafer used for a semiconductor wafer, a photomask or the like, a flat polishing apparatus such as a polishing apparatus is used. In general, as shown in FIG. 7, the flat surface polishing apparatus includes upper and lower surface plates 21 and 22 each having a polishing pad 26 attached to an annular surface, a sun gear 23 located at the center of the lower surface plate 22, An internal gear 24 positioned so as to surround the outer periphery of the lower surface plate 22, and a plurality of carriers 25 positioned on the lower surface plate 22 and meshing with both the gears 23, 24, and a work holding hole 25 a of each carrier 25. The workpiece W is fitted and held therein, and the sun gear 23 is rotated or both the sun gear 23 and the internal gear 24 are rotated to rotate and revolve each carrier 25 around the sun gear 23 and supply polishing liquid. However, the front and back surfaces of the workpiece W are polished by the rotating upper and lower surface plates 21 and 22. At this time, the work W held by the carrier 25 rotates around the center of the carrier 25 as the carrier 25 rotates, and rotates around the sun gear 23 as the carrier 25 revolves. The polishing is performed by pressing against the polishing pads 26 of the rotating upper and lower surface plates 21 and 22.

ところが、このような平面研磨装置においては、上記キャリヤ２５が自転するとき、その回転速度は中心側より外周側の方が大きいため、このキャリヤ２５に保持されたワークＷも、該キャリヤ２５の中心側に位置する部分の回転速度がキャリヤ２５の外周側に位置する部分の回転速度よりも大きくなる。また、上記定盤２１，２２即ち研磨パッド２６の回転速度も、中心側より外周側の方が大きい。このため、これらワークＷ及び研磨パッド２６の回転速度差が原因となってワークＷの研磨量に部分的な差が生じ、ワークＷの外周側ほど多く研磨される結果、該ワークＥの表面は、図８に示すような凸形の曲面になり易い。   However, in such a flat polishing apparatus, when the carrier 25 rotates, its rotational speed is larger on the outer peripheral side than on the central side, so that the workpiece W held by the carrier 25 is also in the center of the carrier 25. The rotational speed of the portion located on the side becomes larger than the rotational speed of the portion located on the outer peripheral side of the carrier 25. Further, the rotational speed of the surface plates 21, 22 or the polishing pad 26 is larger on the outer peripheral side than on the central side. For this reason, a difference in the polishing amount of the workpiece W is caused due to the difference in rotational speed between the workpiece W and the polishing pad 26, and as a result of more polishing toward the outer peripheral side of the workpiece W, the surface of the workpiece E becomes 8 tends to be a convex curved surface as shown in FIG.

このような問題を解消するため、図９に示すように、ワークＷを上下の定盤２１，２２の研磨パッド２６の外周側と内周側とにオーバーハングさせながら研磨する方法も実施されており、この方法によれば、オーバーハングさせない場合よりはワークＷの平坦度が向上することが確認されている。
しかし、ワークＷがオーバーハングする量は常に一定で、研磨パッド２６に対して同じパターンでの接触を繰り返すため、図１０に示すように、該ワークＷの表面には、オーバーハングする部分としない部分との境界部分に形状の変化点としての段部２８が形成され、均一な表面になりにくい。しかも、キャリヤＷが下定盤２２から突出する量も多くなるため、薄いキャリヤ２５を使用する場合に、該キャリヤ２５の外周部が下向きに撓み、振動やばたつきなどによってキャリヤクラッシュやワークのスクラッチ等を発生し易い。 In order to solve such a problem, as shown in FIG. 9, a method of polishing the workpiece W while overhanging the outer peripheral side and the inner peripheral side of the polishing pad 26 of the upper and lower surface plates 21 and 22 has been implemented. According to this method, it has been confirmed that the flatness of the workpiece W is improved as compared with the case where no overhang is caused.
However, the amount of overhang of the workpiece W is always constant, and the contact with the polishing pad 26 in the same pattern is repeated. Therefore, as shown in FIG. A step portion 28 as a shape change point is formed at a boundary portion with the portion, and a uniform surface is hardly obtained. Moreover, since the amount of the carrier W protruding from the lower surface plate 22 also increases, when the thin carrier 25 is used, the outer peripheral portion of the carrier 25 bends downward, causing a carrier crash or a work scratch due to vibration or flapping. It is easy to generate.

一方、特許文献１には、上下の定盤の円環状をした当接部（研磨作業面）のうち、上定盤の研磨作業面を、下定盤の研磨作業面に比べ、外径を小さくかつ内径を大きく形成することにより、ワークを、上定盤の研磨作業面からオーバーハングさせるが下定盤の研磨作業面からはオーバーハングさせないで研磨するようにしたものが開示されている。この例によれば、キャリヤが下定盤から突出する量が少ないため、薄いキャリヤを使用しても上述したキャリヤクラッシュやワークのスクラッチ等は発生しにくくなる。しかし、ワークが上定盤からオーバーハングする量は常に一定であるため、上記の如くワークの表面に形状の変化点が現れるという問題は解消されない。   On the other hand, in Patent Document 1, among the upper and lower surface plate annular contact portions (polishing work surfaces), the upper work plate polishing work surface is smaller in diameter than the lower work plate polishing work surface. In addition, there is disclosed a technique in which a workpiece is polished without overhanging from the polishing work surface of the lower surface plate by overhanging the work surface from the polishing work surface of the lower surface plate by forming the inner diameter large. According to this example, since the amount by which the carrier protrudes from the lower surface plate is small, the above-described carrier crash and workpiece scratches are less likely to occur even when a thin carrier is used. However, since the amount of the workpiece overhanging from the upper surface plate is always constant, the problem that the shape change point appears on the surface of the workpiece as described above cannot be solved.

また、特許文献２には、定盤のパッド貼着面に特殊な形状をした研磨パッド（研磨布）を貼着することにより、ワークのオーバーハング量に変化を持たせるようにしたものが開示されていて、研磨パッドの形状例として、肉厚の薄い環状部分を外周に備えた円形の研磨パッドや、正六角形をした研磨パッド、楕円形の研磨パッド、外周を波形あるいは鋸歯状にカットした研磨パッドなどが示されている。
しかし、この例においても、上記研磨パッドの内外周形状は周方向に規則性を有していて、この研磨パッドが定盤に同心状に貼着されているため、結果的にワークと研磨パッドとは同じパターンでの接触を繰り返すかあるいは同じ加工軌跡をたどることになり、ワーク表面における研磨量の不均一化（面ダレ）の問題は解消されない。しかも、特殊な形状をした上記研磨パッドは、その製造や定盤に対する貼着が難しく、特別な技術と手数とを必要とするなど、別の新たな問題を生じる。 Patent Document 2 discloses a technique in which a work pad overhang amount is changed by attaching a polishing pad (polishing cloth) having a special shape to a pad attaching surface of a surface plate. As an example of the shape of the polishing pad, a circular polishing pad with a thin annular portion on the outer periphery, a regular hexagonal polishing pad, an elliptical polishing pad, or an outer periphery cut into a corrugated or serrated shape A polishing pad or the like is shown.
However, also in this example, the inner and outer peripheral shapes of the polishing pad have regularity in the circumferential direction, and the polishing pad is concentrically attached to the surface plate. Means that contact with the same pattern is repeated or the same processing locus is followed, and the problem of non-uniform polishing amount (surface sagging) on the workpiece surface cannot be solved. In addition, the polishing pad having a special shape is difficult to manufacture and stick to a surface plate, which causes another new problem such as requiring a special technique and labor.

特開２００５− ４６９３２号公報JP 2005-46932 A 特開２０００−２４６６２７号公報JP 2000-246627 A

そこで本発明の目的は、研磨時にワークと研磨パッドとが同じパターンでの接触を繰り返したり同じ加工軌跡をたどるのを極力なくして加工精度を高めると同時に、キャリヤの振動やばたつきなどによるキャリヤクラッシュやワークのスクラッチの発生といった問題も解消することができる、簡単で合理的な設計構造を有する平面研磨装置を提供することにある。   Accordingly, an object of the present invention is to improve the processing accuracy by minimizing the contact between the workpiece and the polishing pad in the same pattern or following the same processing locus during polishing, and at the same time, the carrier crash and the like due to the vibration and flapping of the carrier. It is an object of the present invention to provide a flat polishing apparatus having a simple and rational design structure that can eliminate the problem of occurrence of work scratches.

上記課題を解決するため、本発明は、板状のワークを保持するキャリヤと、該キャリヤを駆動するサンギア及びインターナルギアと、円環状のパッド貼着面に円環状の研磨パッドを貼着した上下の定盤とを有し、上記キャリヤに保持されたワークを共通の回転中心を有するこれら両定盤により両側から挟んで研磨する平面研磨装置において、上記下定盤のパッド貼着面及び研磨パッドが、上記回転中心に対して同心状に位置し、また、上記上定盤のパッド貼着面及び研磨パッドが、上記回転中心に対して偏心した位置を占めると共に、下定盤のパッド貼着面及び研磨パッドに比べて小さい外径と大きい内径とを有するように形成されていて、研磨時に上記ワークが、上下両定盤のうち上定盤の研磨パッドの内外周両側にオーバーハングするように構成されていることを特徴とするものである。   In order to solve the above-described problems, the present invention provides a carrier for holding a plate-shaped workpiece, a sun gear and an internal gear for driving the carrier, and an upper and lower surface in which an annular polishing pad is attached to an annular pad attachment surface. A flat polishing apparatus for sandwiching and polishing a workpiece held by the carrier from both sides with these two surface plates having a common center of rotation. The pad surface of the upper surface plate and the polishing pad occupy a position eccentric with respect to the center of rotation, and the pad surface of the lower surface plate and It is formed so that it has a smaller outer diameter and larger inner diameter than the polishing pad, and the above workpiece overhangs on both the inner and outer peripheral sides of the upper surface plate of the upper surface plate during polishing. And it is characterized in that it is configured to.

本発明においては、上記上定盤のパッド貼着面が、該上定盤の盤面に高低差を付けることにより該盤面上に突出した状態に形成されていることが望ましい。   In the present invention, it is desirable that the pad attachment surface of the upper surface plate is formed so as to protrude from the surface of the upper surface plate by providing a height difference.

また、本発明において好ましくは、上記上定盤の盤面のパッド貼着面を除いたパッド非貼着部が、研磨液との接触を防止するための保護層で覆われていることである。   Further, in the present invention, preferably, the pad non-adhered portion excluding the pad adhering surface of the upper surface plate is covered with a protective layer for preventing contact with the polishing liquid.

さらに、本発明においては、上記上定盤におけるパッド貼着面及び研磨パッドの内周円を、該パッド貼着面及び研磨パッドの中心に対して偏心させることにより、該パッド貼着面及び研磨パッドを上定盤の回転中心を通る２本の互いに直交する仮想線で４等分したとき、上記研磨パッドの４区分された研磨領域の面積が全て異なるように構成することもできる。   Furthermore, in the present invention, the pad adhering surface and the polishing pad are decentered with respect to the pad adhering surface and the center of the polishing pad by decentering the pad adhering surface and the inner circumference of the polishing pad in the upper surface plate. When the pad is divided into four equal parts by two orthogonal virtual lines passing through the center of rotation of the upper surface plate, the areas of the four divided polishing regions of the polishing pad can be all different.

本発明によれば、上定盤における円環状のパッド貼着面及び研磨パッドを、該上定盤の回転中心に対して偏心した位置に形成すると共に、下定盤のパッド貼着面及び研磨パッドより小さい外径と大きい内径とを有するように形成して、研磨時にワークが、上定盤の研磨パッドの内外周両側にオーバーハングするように構成したので、ワークと研磨パッドとが同じパターンでの接触を繰り返したり同じ加工軌跡をたどることがなく、ワーク全体の研磨量が平均化して平坦度及び平行度が確実に高められる。
しかも、上記ワークが下定盤からはオーバーハングしないので、キャリヤが該下定盤から突出する量は少なく、このため、薄いキャリヤを使用しても、その端部が下方に撓まないから、該キャリヤの振動やばたつきなどによるキャリヤクラッシュやワークのスクラッチ等が発生しにくくなる。 According to the present invention, the annular pad adhering surface and the polishing pad on the upper surface plate are formed at a position eccentric with respect to the rotation center of the upper surface plate, and the pad adhering surface and the polishing pad of the lower surface plate are provided. Since the workpiece is formed to have a smaller outer diameter and a larger inner diameter so that the workpiece overhangs on both the inner and outer peripheral sides of the polishing pad of the upper surface plate during polishing, the workpiece and the polishing pad have the same pattern. Thus, the polishing amount of the entire workpiece is averaged and the flatness and the parallelism are reliably increased.
In addition, since the workpiece does not overhang from the lower surface plate, the amount of the carrier protruding from the lower surface plate is small. Therefore, even if a thin carrier is used, the end portion does not bend downward. This makes it difficult for carrier crashes and workpiece scratches due to vibrations and flapping.

図１は、半導体ウエハ、フォトマスク等に用いられるガラスウエハ、セラミックスウエハなどの薄板状をしたワークＷの表面を研磨加工するための平面研磨装置、特に、該ワークＷの両面を研磨するための両面研磨装置の要部の断面を概略的に示すもので、ポリッシング装置によって代表されるものである。   FIG. 1 shows a planar polishing apparatus for polishing a surface of a thin plate-like workpiece W such as a glass wafer or a ceramic wafer used for a semiconductor wafer, a photomask, etc., in particular, for polishing both surfaces of the workpiece W. The cross section of the principal part of a double-side polishing apparatus is shown schematically, and is represented by a polishing apparatus.

上記平面研磨装置は、図２及び図４からも分かるように、中心Ｏ１を共有することによって同心状に位置する円環状をした上下の定盤１，２と、下定盤２の中央に位置するサンギア３と、該下定盤２の外周を取り囲むように位置するインターナルギア４と、下定盤２上にほぼ等間隔に配置されて上記両ギア３，４に噛合する複数のキャリヤ５とを有していて、上記両定盤１，２と、両ギア３，４のうち少なくともサンギア３とが、図示しない伝動機構を介して駆動装置に連結され、必要な方向に必要な速度で回転駆動されるようになっている。また、上定盤１は昇降自在となっていて、ワークＷの研磨時に下降して該ワークＷの上面に当接する。   As can be seen from FIGS. 2 and 4, the planar polishing apparatus is positioned at the center of the upper and lower surface plates 1 and 2 and the lower surface plate 2 that are concentrically positioned by sharing the center O <b> 1. A sun gear 3, an internal gear 4 positioned so as to surround the outer periphery of the lower surface plate 2, and a plurality of carriers 5 arranged on the lower surface plate 2 at substantially equal intervals and meshing with the gears 3, 4. The two surface plates 1 and 2 and at least the sun gear 3 of the gears 3 and 4 are connected to a driving device via a transmission mechanism (not shown) and are driven to rotate in a necessary direction at a necessary speed. It is like that. Further, the upper surface plate 1 is movable up and down, and descends when the workpiece W is polished, and comes into contact with the upper surface of the workpiece W.

上記両定盤１及び２の盤面、即ち上定盤１の下面及び下定盤２の上面には、円環状をしたパッド貼着面７及び８が形成され、これらのパッド貼着面７及び８に、それぞれ、円環状をした研磨パッド１１及び１２が、液不透過性の両面接着シート（図示せず）を介して貼着されている。これらの研磨パッド１１及び１２としては、例えば硬質ウレタン製あるいは硬質不織布製のものを使用することができる。   On the surface of the two surface plates 1 and 2, that is, on the lower surface of the upper surface plate 1 and the upper surface of the lower surface plate 2, annular pad adhering surfaces 7 and 8 are formed, and these pad adhering surfaces 7 and 8 are formed. In addition, annular polishing pads 11 and 12 are bonded to each other via a liquid-impermeable double-sided adhesive sheet (not shown). As these polishing pads 11 and 12, for example, those made of hard urethane or hard nonwoven fabric can be used.

なお、以下の説明中、上下の定盤１，２の各パッド貼着面７，８及び研磨パッド１１，１２について、それらを互いに区別して表示するときは、上定盤１のパッド貼着面７及び研磨パッド１１をそれぞれ上盤パッド貼着面７及び上盤研磨パッド１１と表示し、下定盤２のパッド貼着面８及び研磨パッド１２をそれぞれ下盤パッド貼着面８及び下盤研磨パッド１２と表示するものとする。   In the following description, when the pad adhering surfaces 7 and 8 of the upper and lower surface plates 1 and 2 and the polishing pads 11 and 12 are displayed separately from each other, the pad adhering surface of the upper surface plate 1 is used. 7 and the polishing pad 11 are respectively indicated as an upper board pad attaching surface 7 and an upper board polishing pad 11, and the pad attaching surface 8 and the polishing pad 12 of the lower surface plate 2 are respectively shown as the lower board pad attaching surface 8 and the lower board polishing. It shall be displayed as pad 12.

上記平面研磨装置でワークＷを研磨するときは、上記各キャリヤ５のワーク保持孔５ａ内にそれぞれ該ワークＷを嵌合、保持させ、上記サンギア３を回転させるか又はサンギア３とインターナルギア４の両方を回転させて上記各キャリヤ５をサンギア３の回りで自転及び公転させると共に、上下の定盤１，２を上記中心Ｏ１を回転中心として回転させ、これら両定盤１，２の間に研磨液を供給しながら、上記研磨パッド１１，１２によってワークＷの表裏面を研磨する。このとき、上記キャリヤ５に保持されたワークＷは、該キャリヤ５の自転に伴って該キャリヤ５の中心の回りを回転すると共に、該キャリヤ５の公転に伴ってサンギア３の回りを回転し、上下の定盤１，２の研磨パッド１１，１２に挟持されて研磨されることになる。また、上記ワークＷが円板形をしている場合、研磨時に該ワークＷがワーク保持孔内で自転する場合もある。なお、図ではキャリヤ５及びワークＷの厚さは誇張して描かれている。   When the workpiece W is polished by the plane polishing apparatus, the workpiece W is fitted and held in the workpiece holding hole 5a of each carrier 5, and the sun gear 3 is rotated or the sun gear 3 and the internal gear 4 are Both carriers 5 rotate and revolve around the sun gear 3 and rotate the upper and lower surface plates 1 and 2 around the center O1 as the center of rotation. While supplying the liquid, the front and back surfaces of the workpiece W are polished by the polishing pads 11 and 12. At this time, the workpiece W held by the carrier 5 rotates around the center of the carrier 5 as the carrier 5 rotates, and rotates around the sun gear 3 as the carrier 5 revolves. It is sandwiched between the polishing pads 11 and 12 of the upper and lower surface plates 1 and 2 and polished. Further, when the workpiece W has a disk shape, the workpiece W may rotate in the workpiece holding hole during polishing. In the figure, the thicknesses of the carrier 5 and the workpiece W are exaggerated.

上記上定盤１と下定盤２とは、互いに等しい大きさに形成されている。換言すれば、それらの外径同士及び内径同士がそれぞれ互いに等しく形成されている。
このうち下定盤２においては、円環状をした盤面全体が上記パッド貼着面（下盤パッド貼着面）８となっていて、この下盤パッド貼着面８全体に上記研磨パッド（下盤研磨パッド）１２が貼着されている。従って、これらの下盤パッド貼着面８と下盤研磨パッド１２とは、それらの内外径が互いに等しく、かつ、下定盤の中心（回転中心）Ｏ１に対して同心状に位置していることになる。 The upper surface plate 1 and the lower surface plate 2 are formed to have the same size. In other words, their outer diameters and inner diameters are formed to be equal to each other.
Of these, in the lower surface plate 2, the entire ring-shaped board surface is the pad attachment surface (lower board pad attachment surface) 8, and the polishing pad (lower board) is formed on the entire lower board pad attachment surface 8. A polishing pad 12 is attached. Therefore, the lower board pad adhering surface 8 and the lower board polishing pad 12 have the same inner and outer diameters and are located concentrically with respect to the center (rotation center) O1 of the lower platen. become.

一方、上記上定盤１においては、図３からも分かるように、円環状の盤面に、円環状をした上記パッド貼着面（上盤パッド貼着面）７が、該上定盤の中心（回転中心）Ｏ１に対して偏心した位置を占めるように形成されている。図中Ｏ２がこのパッド貼着面７の中心である。この上盤パッド貼着面７は、上定盤１の盤面に高低差を設けることにより、該盤面上に一定の高さ突出した状態に形成したもので、この上盤パッド貼着面７に、該上盤パッド貼着面７と等しい内外径を有する上記研磨パッド（上盤研磨パッド）１１が同心状に貼着されている。従って、この上盤研磨パッド１１も、上定盤１の中心Ｏ１に対して偏心していることになる。   On the other hand, in the upper surface plate 1, as can be seen from FIG. 3, the annular pad surface (the upper surface pad adhering surface) 7 is formed in the center of the upper surface plate. (Rotation center) It is formed to occupy an eccentric position with respect to O1. In the figure, O2 is the center of the pad attaching surface 7. The upper board pad attaching surface 7 is formed so as to project a certain height on the board surface by providing a height difference on the board surface of the upper surface plate 1. The above-mentioned polishing pad (upper board polishing pad) 11 having an inner and outer diameter equal to the upper board pad attaching surface 7 is attached concentrically. Therefore, this upper board polishing pad 11 is also eccentric with respect to the center O1 of the upper surface plate 1.

上記高低差は、上記パッド貼着面７とその内外周側に位置するパッド非貼着部９ａ，９ｂとの間に階段状の段差を付けることにより形成されている。しかし、この段差は僅かなものであるため、このようなパッド貼着面７の形成によって上定盤１に偏荷重が加わるおそれは殆どない。   The height difference is formed by providing a stepped step between the pad adhering surface 7 and the pad non-adhering portions 9a and 9b located on the inner and outer peripheral sides. However, since this level difference is slight, there is almost no possibility that an offset load is applied to the upper surface plate 1 by the formation of such a pad adhering surface 7.

また、上記上盤パッド貼着面７及び上盤研磨パッド１１は、それらの外径Ｄ１を、上記下盤パッド貼着面８及び下盤研磨パッド１２の外径Ｄ２より小さく形成すると共に、内径ｄ１を、該下盤パッド貼着面８及び下盤研磨パッド１２の内径ｄ２より大きく形成し、さらに、上記上盤パッド貼着面７及び上盤研磨パッド１１の外周円Ｃ１を、下盤パッド貼着面８及び下盤研磨パッド１２の外周円Ｃ２の内側に位置させると共に、該上盤パッド貼着面７及び上盤研磨パッド１１の内周円ｃ１を、下盤パッド貼着面８及び下盤研磨パッド１２の内周円ｃ２の外側に位置させており、これによって上盤研磨パッド１１が、下盤研磨パッド１２の内周側及び外周側の何れにもはみ出さない状態で、該下盤研磨パッド１２の上面領域内を偏心回転するように構成されている。   The upper board pad attaching surface 7 and the upper board polishing pad 11 are formed such that the outer diameter D1 thereof is smaller than the outer diameter D2 of the lower board pad attaching surface 8 and the lower board polishing pad 12, and the inner diameter thereof. d1 is formed to be larger than the inner diameter d2 of the lower board pad attaching surface 8 and the lower board polishing pad 12, and the outer circle C1 of the upper board pad attaching surface 7 and the upper board polishing pad 11 is While being positioned inside the outer circumferential circle C2 of the affixing surface 8 and the lower board polishing pad 12, the inner circumference c1 of the upper board pad adhering surface 7 and the upper board polishing pad 11 is connected to the lower board pad adhering surface 8 and The upper board polishing pad 11 is positioned outside the inner circumference circle c2 of the lower board polishing pad 12, so that the upper board polishing pad 11 does not protrude on either the inner circumference side or the outer circumference side of the lower board polishing pad 12. To rotate eccentrically in the upper surface area of the lower polishing pad 12 It is configured.

なお、上記下盤パッド貼着面８及び下盤研磨パッド１２の外径Ｄ２及び内径ｄ２は、上定盤１の外径及び内径と実質的に同じであり、また、該下盤パッド貼着面８及び下盤研磨パッド１２の外周円Ｃ２及び内周円ｃ２についても、上定盤１の外周円及び内周円と実質的に同じ大きさで同心状に位置しているため、便宜上それらを図３の上定盤１において代替的に表示した。   The outer diameter D2 and inner diameter d2 of the lower board pad attaching surface 8 and lower board polishing pad 12 are substantially the same as the outer diameter and inner diameter of the upper surface plate 1, and the lower board pad attaching. Since the outer circumferential circle C2 and the inner circumferential circle c2 of the surface 8 and the lower polishing pad 12 are also concentrically positioned at substantially the same size as the outer circumferential circle and the inner circumferential circle of the upper surface plate 1, they are for convenience. Is alternatively displayed on the upper surface plate 1 of FIG.

上記上定盤１の盤面の上記パッド貼着面７を除いたその他の部分、即ち、上記パッド非貼着部９ａ，９ｂは、研磨液との接触を防止するための保護層１４で覆われていることが望ましい。パッド貼着面７の内外両側面９ｃ，９ｃについても、それらはパッド非貼着部であるため、同様に保護層１４で被覆することが望ましい。
上記保護層１４としては、液不透過性で、研磨液に対する耐腐食性を有するものであればどのようなものでも良く、例えば、シリカやフッ素系樹脂あるいはポリウレタン系樹脂等をコーティングした樹脂被膜であっても、クロム酸化物等をコーティングした金属被膜であっても良く、あるいは、研磨パッドを貼着するのに使用する液不透過性の接着シートを接着したものであっても良い。 Other portions of the upper surface plate 1 except the pad adhering surface 7, that is, the pad non-adhering portions 9a and 9b are covered with a protective layer 14 for preventing contact with the polishing liquid. It is desirable that Since both the inner and outer side surfaces 9c, 9c of the pad adhering surface 7 are pad non-adhering portions, it is desirable that they are similarly covered with the protective layer 14.
The protective layer 14 may be any liquid-impermeable and corrosion-resistant to the polishing liquid. For example, the protective layer 14 may be a resin film coated with silica, fluorine resin, polyurethane resin, or the like. Alternatively, a metal film coated with chromium oxide or the like may be used, or a liquid-impermeable adhesive sheet used for attaching the polishing pad may be adhered.

かくして、上定盤１の盤面の研磨パッド１１が貼着されていない部分を保護層１４で覆うことにより、外部に露出する部分が研磨液と直接接触することがなくなるため、錆の発生が防止され、錆によるスクラッチの発生や金属汚染の問題が解消される。
なお、上下の定盤１，２におけるパッド貼着面７，８も、上記液不透過性の接着シートで覆われているため、実質的に上記保護層が形成されていることになる。しかし、これらのパッド貼着面７，８にも、上述した樹脂被膜や金属被膜による保護層を形成することができる。 Thus, by covering the portion of the surface of the upper surface plate 1 where the polishing pad 11 is not adhered with the protective layer 14, the portion exposed to the outside is not in direct contact with the polishing liquid, thus preventing the occurrence of rust. This eliminates the problem of rust scratches and metal contamination.
In addition, since the pad sticking surfaces 7 and 8 in the upper and lower surface plates 1 and 2 are also covered with the liquid-impermeable adhesive sheet, the protective layer is substantially formed. However, a protective layer made of the above-described resin film or metal film can also be formed on these pad attachment surfaces 7 and 8.

上記両定盤１，２でワークＷを研磨する場合、該ワークＷは、下定盤２の研磨パッド１１に対しては、その内周側にも外周側にもオーバーハングすることなく、ほぼ全面的に接触するが、上定盤１の偏心した研磨パッド１１に対しては、該研磨パッド１１の内周側及び外周側に部分的にオーバーハングしながら接触し、研磨されることになる。そして、このようにオーバーハングするワーク外周部分では、該ワークＷが下定盤２の研磨パッド１１にだけ接触しているため、その部分に作用する加圧力は軽減され、この結果、ワークＷの外周部分の研磨量が抑えられて全体の研磨量が平均化され、平坦度が向上することになる。特に、上定盤１のパッド貼着面７及び研磨パッド１１を偏心させたことにより、研磨位置によってワークＷのオーバーハング量が常に異なり、キャリヤ５及びワークＷが最初の位置（初期位置）に戻ってくる間は同じ加工軌跡をたどらないため、研磨パッド面が均一に使用されて各ワークＷが均等に研磨されることになり、図１０に示すような形状の変化点である段部２８が形成されにくい。
しかも、上盤パッド貼着面７及び上盤研磨パッド１１を単純な形状である円環状に形成し、それを定盤の回転中心Ｏ１に対して偏心させただけであるから、特殊形状のパッド貼着面及び研磨パッドを使用する従来例に比べて構成が非常に簡単であり、研磨パッドの製造もパッド貼着面に対する貼着も容易である。 When the workpiece W is polished by the both surface plates 1 and 2, the workpiece W is almost entirely over the polishing pad 11 of the lower surface plate 2 without overhanging the inner peripheral side or the outer peripheral side thereof. However, the eccentric polishing pad 11 of the upper surface plate 1 comes into contact with the inner peripheral side and the outer peripheral side of the polishing pad 11 while partially overhanging and is polished. Then, since the workpiece W is in contact with only the polishing pad 11 of the lower surface plate 2 in the workpiece outer peripheral portion thus overhanging, the applied pressure acting on the portion is reduced. As a result, the outer periphery of the workpiece W is reduced. The polishing amount of the portion is suppressed, the entire polishing amount is averaged, and the flatness is improved. In particular, since the pad adhering surface 7 and the polishing pad 11 of the upper surface plate 1 are decentered, the amount of overhang of the work W is always different depending on the polishing position, and the carrier 5 and the work W are at the initial position (initial position). Since the same machining trajectory is not followed while returning, the polishing pad surface is uniformly used and each workpiece W is uniformly polished, and the step portion 28 which is a shape change point as shown in FIG. Is difficult to form.
In addition, since the upper board pad adhering surface 7 and the upper board polishing pad 11 are formed in an annular shape having a simple shape and are eccentric with respect to the rotation center O1 of the surface plate, the pad with a special shape is used. Compared to a conventional example using a sticking surface and a polishing pad, the configuration is very simple, and manufacturing of the polishing pad and sticking to the pad sticking surface are easy.

また、上記ワークＷを保持する各キャリヤ５は、研磨時にその殆どの部分が下定盤２の研磨パッド１１に下から支持された状態で自転及び公転し、該下定盤２から突出する量は少ない。従って、薄いワークＷを研磨するために薄肉のキャリヤ５を使用する場合でも、該キャリヤの下方への撓みが殆ど生じないため、該キャリヤの振動やばたつき等が発生することはなく、このような振動やばたつきに起因するワークＷの飛び出しやスクラッチあるいはキャリヤクラッシュ等が発生しにくい。   Each carrier 5 holding the workpiece W rotates and revolves with most of the carrier 5 supported by the polishing pad 11 of the lower surface plate 2 from below during polishing, and the amount protruding from the lower surface plate 2 is small. . Therefore, even when the thin carrier 5 is used to polish the thin workpiece W, the carrier is hardly bent downward, so that the carrier does not vibrate or flutter. It is difficult for the workpiece W to jump out, scratch or carrier crash due to vibration or flapping.

図５は上定盤の第２実施形態を示すもので、この第２実施形態の上定盤１Ａが図３に示す第１実施形態の上定盤１と相違する点は、第１実施形態の上定盤１においては、パッド貼着面７及び研磨パッド１１の内周円ｃ１が、該パッド貼着面７及び研磨パッド１１の中心Ｏ２に対して同心状に位置しているのに対し、この第２実施形態の上定盤１Ａは、パッド貼着面７及び研磨パッド１１の内周円ｃ１が、該パッド貼着面７及び研磨パッド１１の中心Ｏ２に対して偏心しているという点である。換言すれば、パッド貼着面７及び研磨パッド１１の外周円Ｃ１に対して内周円ｃ１が偏心していることになる。図中Ｏ３が上記内周円ｃ１の中心である。   FIG. 5 shows a second embodiment of the upper surface plate. The upper surface plate 1A of the second embodiment is different from the upper surface plate 1 of the first embodiment shown in FIG. 3 in the first embodiment. In the upper surface plate 1, the pad adhering surface 7 and the inner circumferential circle c1 of the polishing pad 11 are concentrically located with respect to the pad adhering surface 7 and the center O2 of the polishing pad 11. In the upper surface plate 1A of the second embodiment, the pad adhering surface 7 and the inner circumferential circle c1 of the polishing pad 11 are eccentric with respect to the pad adhering surface 7 and the center O2 of the polishing pad 11. It is. In other words, the inner circumferential circle c1 is decentered with respect to the pad pasting surface 7 and the outer circumferential circle C1 of the polishing pad 11. In the figure, O3 is the center of the inner circumference circle c1.

しかも、上記内周円ｃ１の中心Ｏ３を、上定盤１Ａの中心Ｏ１とパッド貼着面７及び研磨パッド１１の中心Ｏ２とを結ぶ直線上に位置しないように配置することにより、上記パッド貼着面７及び研磨パッド１１を該上定盤１Ａの中心Ｏ１１を通る２本の互いに直交する仮想線Ｌ１，Ｌ２で４等分したとき、上記研磨パッド１１の４区分された研磨領域１１ａ，１１ｂ，１１ｃ，１１ｄの面積が全て異なるように構成されている。上記以外の構成は第１実施形態の上定盤１と実質的に同じである。   In addition, by arranging the center O3 of the inner circumferential circle c1 so as not to be positioned on a straight line connecting the center O1 of the upper surface plate 1A and the center O2 of the pad attaching surface 7 and the polishing pad 11, the pad attaching When the landing surface 7 and the polishing pad 11 are divided into four equal parts by two virtual lines L1 and L2 orthogonal to each other passing through the center O11 of the upper surface plate 1A, the four polishing regions 11a and 11b of the polishing pad 11 are divided. , 11c, 11d are configured to have different areas. The configuration other than the above is substantially the same as the upper surface plate 1 of the first embodiment.

上定盤１Ａをこのように構成することにより、研磨時にワークＷが研磨パッド１１からオーバーハングする量及び姿勢が何れの研磨位置においても同じにならないため、換言すれば、ワークＷと研磨パッド１１とが同じ加工軌跡をたどらないため、該ワークＷの研磨量は全面にわたってより均等化され、平坦度が一層高められることになる。   By configuring the upper surface plate 1A in this way, the amount and posture of the workpiece W overhanging from the polishing pad 11 during polishing are not the same at any polishing position. In other words, the workpiece W and the polishing pad 11 Do not follow the same machining locus, the amount of polishing of the workpiece W is made more uniform over the entire surface, and the flatness is further increased.

図６は上定盤の第３実施形態を示すもので、この第３実施形態の上定盤１Ｂが図３及び図５に示す第１及び第２実施形態の上定盤１，１Ａと相違する点は、これらの上定盤１，１Ａにおいては、パッド貼着面７とパッド非貼着部９ａ，９ｂとの間の高低差を階段状の段差により形成しているのに対し、この第３実施形態の上定盤１Ｂにおいては、パッド非貼着部９ａ，９ｂを傾斜面とすることにより、パッド貼着面７とパッド非貼着部９ａ，９ｂとの間に高低差を付けている点である。即ち、パッド貼着面７の内周側に位置する上記パッド非貼着部９ａは、該パッド貼着面７から遠ざかる方向である定盤内周側に向けて該定盤の肉厚が次第に薄くなるように傾斜し、パッド貼着面７の外周側に位置する上記パッド非貼着部９ｂは、該パッド貼着面７から遠ざかる方向である定盤外周側に向けて該定盤の肉厚が次第に薄くなるように傾斜している。これらのパッド非貼着部９ａ，９ｂにも、上記第１実施形態の上定盤１と同様に保護層を形成することが望ましいが、その図示は省略されている。   FIG. 6 shows a third embodiment of the upper surface plate, and the upper surface plate 1B of the third embodiment is different from the upper surface plates 1 and 1A of the first and second embodiments shown in FIGS. In these upper surface plates 1 and 1A, the height difference between the pad adhering surface 7 and the pad non-adhering portions 9a and 9b is formed by a stepped step. In the upper surface plate 1B of the third embodiment, by making the pad non-adhering portions 9a, 9b inclined surfaces, a difference in height is provided between the pad adhering surface 7 and the pad non-adhering portions 9a, 9b. It is a point. That is, the pad non-adhering portion 9a located on the inner peripheral side of the pad adhering surface 7 gradually increases the thickness of the surface plate toward the inner surface of the surface plate that is away from the pad adhering surface 7. The pad non-adhering portion 9b, which is inclined so as to be thin and located on the outer peripheral side of the pad adhering surface 7, has a meat on the surface plate toward the outer peripheral side of the surface plate which is a direction away from the pad adhering surface 7. It is inclined so that the thickness becomes gradually thinner. Although it is desirable to form a protective layer on these pad non-adhering portions 9a and 9b similarly to the upper surface plate 1 of the first embodiment, the illustration thereof is omitted.

従って、この上定盤１Ｂにおける上記パッド非貼着部９ａ，９ｂの形状は、軸線が偏心した円錐面のような形状であり、それらの面の傾きは互いに逆向きである。これに対し、上記第１及び第２実施形態の上定盤１及び１Ａの上記パッド非貼着部９ａ，９ｂは、パッド貼着面７と平行する平面である。   Therefore, the shape of the pad non-adhering portions 9a and 9b in the upper surface plate 1B is a conical surface whose axis is eccentric, and the inclinations of these surfaces are opposite to each other. On the other hand, the pad non-adhering portions 9 a and 9 b of the upper surface plates 1 and 1 A of the first and second embodiments are planes parallel to the pad adhering surface 7.

なお、上記各実施形態においては、上下の定盤が互いに等しい内外径を有するように形成されているが、両定盤の内外径は必ずしも等しくなくて良い。ただし、この場合においても、両定盤におけるパッド貼着面７，８及び研磨パッド１１，１２の大きさ及び位置関係は、上述した通りである。また、上定盤については、その中心と回転中心とが必ずしも一致している必要はない。   In each of the above embodiments, the upper and lower surface plates are formed to have the same inner and outer diameters, but the inner and outer diameters of both surface plates are not necessarily equal. However, also in this case, the size and positional relationship of the pad adhering surfaces 7 and 8 and the polishing pads 11 and 12 in both surface plates are as described above. Further, the center and the center of rotation of the upper surface plate are not necessarily coincident.

本発明に係る平面研磨装置を概略的に示す要部断面図である。It is principal part sectional drawing which shows the planar polishing apparatus which concerns on this invention roughly. 図１の平面研磨装置を、上定盤を取り除くと共に、該上定盤のパッド貼着面及び研磨パッドを仮想線で示した状態の平面図である。FIG. 2 is a plan view of the planar polishing apparatus of FIG. 1 with the upper surface plate removed and the pad adhering surface and polishing pad of the upper surface plate indicated by phantom lines. 図１の平面研磨装置における上定盤の下面図である。FIG. 2 is a bottom view of an upper surface plate in the flat polishing apparatus of FIG. 1. 図１の要部拡大図である。It is a principal part enlarged view of FIG. 上定盤の第２実施形態を示す図３と同様の下面図である。It is a bottom view similar to FIG. 3 which shows 2nd Embodiment of an upper surface plate. 上定盤の第３実施形態を示す断面図である。It is sectional drawing which shows 3rd Embodiment of an upper surface plate. 従来の平面研磨装置の一例を概略的に示す要部断面図である。It is principal part sectional drawing which shows an example of the conventional plane polishing apparatus roughly. 図７の平面研磨装置で研磨したときのワークの平面形状を模式的に示す要部断面図である。It is principal part sectional drawing which shows typically the planar shape of the workpiece | work when grind | polishing with the planar polishing apparatus of FIG. 従来の平面研磨装置の他を概略的に示す要部断面図である。It is principal part sectional drawing which shows the other conventional surface polishing apparatus roughly. 図７の平面研磨装置で研磨したときのワークの平面形状を模式的に示す要部断面図である。It is principal part sectional drawing which shows typically the planar shape of the workpiece | work when grind | polishing with the planar polishing apparatus of FIG.

符号の説明Explanation of symbols

１，１Ａ，１Ｂ 上定盤
２ 下定盤
３ サンギア
４ インターナルギア
５ キャリヤ
７，８ パッド貼着面
９ａ，９ｂ，９ｃ パッド非貼着部
１１，１２ 研磨パッド
１１ａ，１１ｂ，１１Ｂ，１１ｄ 研磨領域
Ｗ ワーク
Ｏ１ 定盤の中心
Ｏ２ 上定盤のパッド貼着面及び研磨パッドの中心
Ｏ３ 上定盤のパッド貼着面及び研磨パッドの内周円の中心
Ｄ１ 上定盤のパッド貼着面及び研磨パッドの外径
ｄ１ 上定盤のパッド貼着面及び研磨パッドの内径
Ｄ２ 下定盤のパッド貼着面及び研磨パッドの外径
ｄ２ 下定盤のパッド貼着面及び研磨パッドの内径
ｃ１ 上定盤のパッド貼着面及び研磨パッドの内周円
Ｌ１，Ｌ２ 仮想線
1, 1A, 1B Upper surface plate 2 Lower surface plate 3 Sun gear 4 Internal gear 5 Carrier 7, 8 Pad bonding surface 9a, 9b, 9c Pad non-bonding part 11, 12 Polishing pad 11a, 11b, 11B, 11d Polishing area W Work O1 Center of the surface plate O2 Center of the pad surface of the upper surface plate and the center of the polishing pad O3 Center of the pad surface of the upper surface plate and the inner circumference of the polishing pad D1 Pad surface of the upper surface plate and the polishing pad Outer diameter d1 Pad surface of upper surface plate and inner diameter of polishing pad D2 Pad surface of lower surface plate and outer diameter of polishing pad d2 Pad surface of lower surface plate and inner diameter of polishing pad c1 Pad of upper surface plate Bonding surface and inner circumference of polishing pad L1, L2 Virtual line

Claims (4)

板状のワークを保持するキャリヤと、該キャリヤを駆動するサンギア及びインターナルギアと、円環状のパッド貼着面に円環状の研磨パッドを貼着した上下の定盤とを有し、上記キャリヤに保持されたワークを共通の回転中心を有するこれら両定盤により両側から挟んで研磨する平面研磨装置において、
上記下定盤のパッド貼着面及び研磨パッドが、上記回転中心に対して同心状に位置し、また、上記上定盤のパッド貼着面及び研磨パッドが、上記回転中心に対して偏心した位置を占めると共に、下定盤のパッド貼着面及び研磨パッドに比べて小さい外径と大きい内径とを有するように形成されていて、研磨時に上記ワークが、上下両定盤のうち上定盤の研磨パッドの内外周両側にオーバーハングするように構成されていることを特徴とする平面研磨装置。 A carrier for holding a plate-like workpiece, a sun gear and an internal gear for driving the carrier, and upper and lower surface plates each having an annular polishing pad attached to an annular pad attaching surface. In a planar polishing apparatus for polishing a workpiece held between both sides by these two surface plates having a common center of rotation,
The pad attachment surface and polishing pad of the lower surface plate are located concentrically with respect to the rotation center, and the pad attachment surface and polishing pad of the upper surface plate are eccentric with respect to the rotation center. And has a smaller outer diameter and larger inner diameter than the pad attachment surface of the lower surface plate and the polishing pad, and the workpiece is polished on the upper surface plate of the upper and lower surface plates when polishing. A flat polishing apparatus configured to overhang on both inner and outer peripheral sides of a pad. 上記上定盤のパッド貼着面が、該上定盤の盤面に高低差を付けることにより該盤面上に突出した状態に形成されていることを特徴とする請求項１に記載の平面研磨装置。   2. The surface polishing apparatus according to claim 1, wherein the pad attaching surface of the upper surface plate is formed in a state of projecting on the surface of the upper surface plate by providing a height difference. . 上記上定盤の盤面のパッド貼着面を除いたパッド非貼着部が、研磨液との接触を防止するための保護層で覆われていることを特徴とする請求項２に記載の平面研磨装置。   3. The flat surface according to claim 2, wherein the pad non-adhered portion excluding the pad adhering surface of the upper surface plate is covered with a protective layer for preventing contact with the polishing liquid. Polishing equipment. 上記上定盤におけるパッド貼着面及び研磨パッドの内周円を、該パッド貼着面及び研磨パッドの中心に対して偏心させることにより、該パッド貼着面及び研磨パッドを上定盤の回転中心を通る２本の互いに直交する仮想線で４等分したとき、上記研磨パッドの４区分された研磨領域の面積が全て異なるように構成されていることを特徴とする請求項１から３の何れかに記載の平面研磨装置。   By rotating the pad attachment surface and the polishing pad on the upper surface plate with respect to the center of the pad attachment surface and the polishing pad, the pad attachment surface and the polishing pad are rotated. 4. The structure according to claim 1, wherein the areas of the four divided polishing regions of the polishing pad are all different when divided into four equal virtual lines passing through the center and orthogonal to each other. 5. The flat polishing apparatus according to any one of the above.
JP2005274707A 2005-09-21 2005-09-21 Surface polishing equipment Expired - Fee Related JP4614851B2 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235899A (en) * 2007-03-19 2008-10-02 Siltronic Ag Method for simultaneous grinding of a plurality of semiconductor wafers
KR100901019B1 (en) 2007-08-13 2009-06-04 주식회사 실트론 Double side polishing and polishing method having the same
JP2010201588A (en) * 2009-03-05 2010-09-16 Fujibo Holdings Inc Polishing working method
JP2011216887A (en) * 2010-03-31 2011-10-27 Siltronic Ag Method for both-surface polishing of semiconductor wafer
CN113231919A (en) * 2021-05-10 2021-08-10 南通瑞景光电科技有限公司 Environment-friendly grinding process for optical element

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11262855A (en) * 1998-03-16 1999-09-28 Speedfam Co Ltd Fixed board for polishing device and pasting method for polishing pad
JPH11309669A (en) * 1998-04-28 1999-11-09 Joichi Takada Both-surface polishing machine
JP2001138225A (en) * 1999-11-18 2001-05-22 Toshiba Ceramics Co Ltd Mirror surface grinding method of semiconductor wafer
JP2002025951A (en) * 2000-07-11 2002-01-25 Mitsubishi Materials Corp Double-sided machining apparatus and truing method of grinding means
JP2004087521A (en) * 2002-08-22 2004-03-18 Sumitomo Mitsubishi Silicon Corp One-side mirror surface wafer and its manufacturing method
JP2004146704A (en) * 2002-10-25 2004-05-20 Jsr Corp Polishing pad for semiconductor wafer and working method therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11262855A (en) * 1998-03-16 1999-09-28 Speedfam Co Ltd Fixed board for polishing device and pasting method for polishing pad
JPH11309669A (en) * 1998-04-28 1999-11-09 Joichi Takada Both-surface polishing machine
JP2001138225A (en) * 1999-11-18 2001-05-22 Toshiba Ceramics Co Ltd Mirror surface grinding method of semiconductor wafer
JP2002025951A (en) * 2000-07-11 2002-01-25 Mitsubishi Materials Corp Double-sided machining apparatus and truing method of grinding means
JP2004087521A (en) * 2002-08-22 2004-03-18 Sumitomo Mitsubishi Silicon Corp One-side mirror surface wafer and its manufacturing method
JP2004146704A (en) * 2002-10-25 2004-05-20 Jsr Corp Polishing pad for semiconductor wafer and working method therefor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235899A (en) * 2007-03-19 2008-10-02 Siltronic Ag Method for simultaneous grinding of a plurality of semiconductor wafers
US8113913B2 (en) 2007-03-19 2012-02-14 Siltronic Ag Method for the simultaneous grinding of a plurality of semiconductor wafers
KR100901019B1 (en) 2007-08-13 2009-06-04 주식회사 실트론 Double side polishing and polishing method having the same
JP2010201588A (en) * 2009-03-05 2010-09-16 Fujibo Holdings Inc Polishing working method
JP2011216887A (en) * 2010-03-31 2011-10-27 Siltronic Ag Method for both-surface polishing of semiconductor wafer
KR101229707B1 (en) 2010-03-31 2013-02-07 실트로닉 아게 Method for the double-side polishing of a semiconductor wafer
US8721390B2 (en) 2010-03-31 2014-05-13 Siltronic Ag Method for the double-side polishing of a semiconductor wafer
CN113231919A (en) * 2021-05-10 2021-08-10 南通瑞景光电科技有限公司 Environment-friendly grinding process for optical element

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