JP2007081350A - Method of manufacturing laminated substrate and thin film device - Google Patents

Method of manufacturing laminated substrate and thin film device Download PDF

Info

Publication number
JP2007081350A
JP2007081350A JP2005271121A JP2005271121A JP2007081350A JP 2007081350 A JP2007081350 A JP 2007081350A JP 2005271121 A JP2005271121 A JP 2005271121A JP 2005271121 A JP2005271121 A JP 2005271121A JP 2007081350 A JP2007081350 A JP 2007081350A
Authority
JP
Japan
Prior art keywords
layer
resin layer
resin
inorganic
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005271121A
Other languages
Japanese (ja)
Inventor
Tamotsu Sasaki
保 佐々木
Masami Sasaki
正美 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2005271121A priority Critical patent/JP2007081350A/en
Publication of JP2007081350A publication Critical patent/JP2007081350A/en
Withdrawn legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a laminated substrate and a thin film device which increases the adhesion force between a resin layer and an inorganic layer thereon. <P>SOLUTION: The method of manufacturing a laminated substrate 10 includes: a step of forming an uncured resin layer 14A which is configured with a thermosetting resin having a reaction ratio of 0-85% on a substrate 12; and a step of sputter-depositing an SiO<SB>2</SB>layer 16 on the upside 14a of the resin layer 14A. In the sputter-depositing the SiO<SB>2</SB>layer 16 on the upside 14a of the resin layer 14A in this method for manufacturing the laminated substrate 10, the thermosetting resin is not fully cured to result in fine unevenness on the surface 14a of the resin layer 14. The anchor effect arising from the unevenness of the surface 14a increases the adhesion force between the resin layer 14A and the SiO<SB>2</SB>layer 16 formed thereon. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、積層基板及び薄膜デバイスに関するものである。   The present invention relates to a laminated substrate and a thin film device.

薄膜デバイスの一つである薄膜インダクタの製造方法は、例えば、下記特許文献１に開示されている。この公報に記載の薄膜インダクタの製造方法においては、コイルを熱硬化させた樹脂層で覆った後、その樹脂層上に無機絶縁層がスパッタ成膜される。
特許２７６９１０６号公報 A manufacturing method of a thin film inductor which is one of thin film devices is disclosed in, for example, Patent Document 1 below. In the method of manufacturing a thin film inductor described in this publication, an inorganic insulating layer is formed by sputtering on the resin layer after the coil is covered with a heat-cured resin layer.
Japanese Patent No. 2769106

しかしながら、上述した製造方法のように熱硬化させた樹脂層上に無機絶縁層をスパッタ成膜した場合では、樹脂層と無機絶縁層との間の十分な密着力が得られず、その結果、作製された薄膜インダクタは樹脂層と無機絶縁層との間において剥離が生じ易くなっている。そのため、後工程の熱処理の際などに樹脂層と無機絶縁層とが剥離することがあった。   However, in the case where the inorganic insulating layer is formed by sputtering on the heat-cured resin layer as in the manufacturing method described above, sufficient adhesion between the resin layer and the inorganic insulating layer cannot be obtained. The manufactured thin film inductor is easily peeled between the resin layer and the inorganic insulating layer. Therefore, the resin layer and the inorganic insulating layer may be peeled off at the time of heat treatment in a subsequent process.

そこで、本発明は、上述の課題を解決するためになされたもので、樹脂層とその上の無機層との間の密着力の強化が図られた積層基板及び薄膜デバイスの製造方法を提供することを目的とする。   Therefore, the present invention has been made to solve the above-described problems, and provides a method for manufacturing a laminated substrate and a thin film device in which adhesion between a resin layer and an inorganic layer thereon is enhanced. For the purpose.

本発明に係る積層基板の製造方法は、基板上に、反応率が０〜８５％である熱硬化性樹脂で構成された樹脂層を形成する工程と、樹脂層の上面に無機層をスパッタ成膜する工程とを備えることを特徴とする。   The method for producing a laminated substrate according to the present invention includes a step of forming a resin layer composed of a thermosetting resin having a reaction rate of 0 to 85% on a substrate, and an inorganic layer formed on the upper surface of the resin layer by sputtering. And a film forming step.

この積層基板の製造方法においては、樹脂層の上面に無機層をスパッタ成膜する際、その樹脂層の熱硬化性樹脂の反応率は０〜８５％であり、熱硬化性樹脂は十分に硬化されていない状態である。そのため、スパッタにより無機粒子が樹脂層に飛来すると、樹脂層の表面に微細な凹凸が生じる。そして、樹脂層の表面に生じたこの凹凸に起因するアンカー効果により、樹脂層とその上に成膜される無機層との間の密着力の強化が実現される。   In this method of manufacturing a laminated substrate, when an inorganic layer is formed by sputtering on the upper surface of the resin layer, the reaction rate of the thermosetting resin of the resin layer is 0 to 85%, and the thermosetting resin is sufficiently cured. It is a state that has not been done. Therefore, when the inorganic particles fly to the resin layer by sputtering, fine irregularities are generated on the surface of the resin layer. And the anchoring effect resulting from this unevenness which arose on the surface of the resin layer implement | achieves reinforcement | strengthening of the adhesive force between the resin layer and the inorganic layer formed into a film on it.

また、無機層をスパッタ成膜した後に、樹脂層を加熱して熱硬化性樹脂の反応率を上げる工程をさらに備えることが好ましい。この場合、後工程において、樹脂層からガスが発生する事態や樹脂層が収縮する事態を効果的に抑制することができる。   Further, it is preferable to further include a step of heating the resin layer to increase the reaction rate of the thermosetting resin after the inorganic layer is formed by sputtering. In this case, a situation where gas is generated from the resin layer or a situation where the resin layer contracts can be effectively suppressed in the subsequent process.

本発明に係る薄膜デバイスの製造方法は、基板上に、電極配線を形成する工程と、基板上に、電極配線を覆うように、反応率が０〜８５％である熱硬化性樹脂で構成された樹脂層を形成する工程と、樹脂層の上面に無機層をスパッタ成膜する工程と、無機層をスパッタ成膜した後に、樹脂層を加熱して熱硬化性樹脂の反応率を上げる工程とを備えることを特徴とする。   The method for manufacturing a thin film device according to the present invention includes a step of forming an electrode wiring on a substrate and a thermosetting resin having a reaction rate of 0 to 85% so as to cover the electrode wiring on the substrate. Forming a resin layer, sputtering an inorganic layer on the upper surface of the resin layer, and heating the resin layer after the inorganic layer is sputtered to increase the reaction rate of the thermosetting resin. It is characterized by providing.

この薄膜デバイスの製造方法においては、樹脂層の上面に無機層をスパッタ成膜する際、その樹脂層の熱硬化性樹脂の反応率は０〜８５％であり、熱硬化性樹脂は十分に硬化されていない状態である。そのため、スパッタにより無機粒子が樹脂層に飛来すると、樹脂層の表面に微細な凹凸が生じる。そして、樹脂層の表面に生じたこの凹凸に起因するアンカー効果により、樹脂層とその上に成膜される無機層との間の密着力の強化が実現される。   In this thin film device manufacturing method, when an inorganic layer is formed by sputtering on the upper surface of the resin layer, the reaction rate of the thermosetting resin in the resin layer is 0 to 85%, and the thermosetting resin is sufficiently cured. It is a state that has not been done. Therefore, when the inorganic particles fly to the resin layer by sputtering, fine irregularities are generated on the surface of the resin layer. And the anchoring effect resulting from this unevenness which arose on the surface of the resin layer implement | achieves reinforcement | strengthening of the adhesive force between the resin layer and the inorganic layer formed into a film on it.

本発明に係る薄膜デバイスの製造方法は、基板上に、第１電極配線を形成する工程と、基板上に、第１電極配線を覆うように第１樹脂層を形成する工程と、第１樹脂層上に、第２電極配線を形成する工程と、第１樹脂層上に、第２電極配線を覆うように、反応率が０〜８５％である熱硬化性樹脂で構成された第２樹脂層を形成する工程と、第２樹脂層の上面に無機層をスパッタ成膜する工程と、無機層をスパッタ成膜した後に、第２樹脂層を加熱して熱硬化性樹脂の反応率を上げる工程とを備えることを特徴とする。   The method of manufacturing a thin film device according to the present invention includes a step of forming a first electrode wiring on a substrate, a step of forming a first resin layer on the substrate so as to cover the first electrode wiring, and a first resin A step of forming a second electrode wiring on the layer, and a second resin composed of a thermosetting resin having a reaction rate of 0 to 85% so as to cover the second electrode wiring on the first resin layer A step of forming a layer, a step of forming an inorganic layer on the upper surface of the second resin layer by sputtering, and heating the second resin layer after the inorganic layer is formed by sputtering to increase the reaction rate of the thermosetting resin. And a process.

この薄膜デバイスの製造方法においては、第２樹脂層の上面に無機層をスパッタ成膜する際、その第２樹脂層の熱硬化性樹脂の反応率は０〜８５％であり、熱硬化性樹脂は十分に硬化されていない状態である。そのため、スパッタにより無機粒子が第２樹脂層に飛来すると、第２樹脂層の表面に微細な凹凸が生じる。そして、第２樹脂層の表面に生じたこの凹凸に起因するアンカー効果により、第２樹脂層とその上に成膜される無機層との間の密着力の強化が実現される。   In this thin film device manufacturing method, when the inorganic layer is sputter-deposited on the upper surface of the second resin layer, the reaction rate of the thermosetting resin of the second resin layer is 0 to 85%, and the thermosetting resin Is not fully cured. Therefore, when the inorganic particles fly to the second resin layer by sputtering, fine irregularities are generated on the surface of the second resin layer. Then, due to the anchor effect caused by the unevenness generated on the surface of the second resin layer, the adhesion strength between the second resin layer and the inorganic layer formed thereon is enhanced.

また、無機層が無機絶縁材料で構成されており、この無機層を樹脂層の上面にスパッタ成膜した後に、無機層上に磁性層を積層し、その後、樹脂層を加熱して熱硬化性樹脂の反応率を上げる工程をおこなうことが好ましい。この場合、樹脂層と磁性層との間に無機絶縁材料で構成された無機層が介在するため、樹脂層の溶剤が磁性層に悪影響を与える事態等を効果的に回避することができる。   In addition, the inorganic layer is composed of an inorganic insulating material. After the inorganic layer is sputter-deposited on the upper surface of the resin layer, a magnetic layer is laminated on the inorganic layer, and then the resin layer is heated to be thermosetting. It is preferable to perform a step of increasing the reaction rate of the resin. In this case, since an inorganic layer made of an inorganic insulating material is interposed between the resin layer and the magnetic layer, it is possible to effectively avoid a situation in which the solvent of the resin layer adversely affects the magnetic layer.

また、無機層が無機絶縁材料で構成されており、この無機層を第２樹脂層の上面にスパッタ成膜した後に、無機層上に磁性層を積層し、その後、第２樹脂層を加熱して熱硬化性樹脂の反応率を上げる工程をおこなうことが好ましい。この場合、第２樹脂層と磁性層との間に無機絶縁材料で構成された無機層が介在するため、第２樹脂層の溶剤が磁性層に悪影響を与える事態等を効果的に回避することができる。   In addition, the inorganic layer is made of an inorganic insulating material. After the inorganic layer is sputter-deposited on the upper surface of the second resin layer, a magnetic layer is laminated on the inorganic layer, and then the second resin layer is heated. It is preferable to perform a step of increasing the reaction rate of the thermosetting resin. In this case, since an inorganic layer made of an inorganic insulating material is interposed between the second resin layer and the magnetic layer, it is possible to effectively avoid situations where the solvent of the second resin layer adversely affects the magnetic layer. Can do.

また、無機層が無機磁性材料で構成されていることが好ましい。この場合、樹脂層の上面に磁性層が直接成膜されるため、樹脂層と磁性層との間にその他の膜が介在する場合に比べ、製造工程が削減される。   The inorganic layer is preferably made of an inorganic magnetic material. In this case, since the magnetic layer is directly formed on the upper surface of the resin layer, the manufacturing process is reduced as compared with the case where another film is interposed between the resin layer and the magnetic layer.

本発明によれば、樹脂層とその上の無機層との間の密着力の強化が図られた積層基板及び薄膜デバイスの製造方法が提供される。   ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the laminated substrate and thin film device in which reinforcement | strengthening of the adhesive force between the resin layer and the inorganic layer on it was aimed at is provided.

以下、添付図面を参照して本発明に係る積層基板及び薄膜デバイスの製造方法を実施するにあたり最良と思われる形態について詳細に説明する。なお、同一又は同等の要素については同一の符号を付し、説明が重複する場合にはその説明を省略する。   DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments that are considered to be best for carrying out a method for manufacturing a multilayer substrate and a thin film device according to the invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol is attached | subjected about the same or equivalent element, and the description is abbreviate | omitted when description overlaps.

まず、本発明の実施形態に係る積層基板として、図１に示す積層基板１０について説明する。この図に示すように、積層基板１０は、基板１２上に樹脂層１４及びＳｉＯ２層（無機層）１６が順次積層された積層構造を有している。樹脂層１４は、ネガタイプ感光性で熱硬化性を有するフェノール系樹脂（熱硬化性樹脂）で構成されている。ＳｉＯ２層１６は、無機絶縁材料である酸化ケイ素（ＳｉＯ２）構成されている。 First, a laminated substrate 10 shown in FIG. 1 will be described as a laminated substrate according to an embodiment of the present invention. As shown in this figure, the laminated substrate 10 has a laminated structure in which a resin layer 14 and an SiO 2 layer (inorganic layer) 16 are sequentially laminated on a substrate 12. The resin layer 14 is composed of a phenolic resin (thermosetting resin) having negative photosensitivity and thermosetting properties. The SiO 2 layer 16 is composed of silicon oxide (SiO 2 ), which is an inorganic insulating material.

次に、この積層基板１０を作製する手順について、図２を参照しつつ説明する。   Next, a procedure for manufacturing the laminated substrate 10 will be described with reference to FIG.

積層基板１０を作製する際には、基板１２上に、図２（ａ）に示すように、反応率が１６％であるフェノール系樹脂で構成された未硬化樹脂層１４Ａを形成する。具体的には、基板１２上に、スピンコータを用いてフェノール系樹脂を２０００ｒｐｍ／３０秒で塗布すると共に、ホットプレートにより１１０℃／１８００秒でプリベイクをおこなう。若しくは、反応率が１６％であるフェノール系樹脂で構成された樹脂フィルムを基板１２に貼付して、未硬化樹脂層１４Ａを形成してもよい。   When the laminated substrate 10 is manufactured, as shown in FIG. 2A, an uncured resin layer 14A made of a phenol-based resin having a reaction rate of 16% is formed on the substrate 12. Specifically, a phenolic resin is applied onto the substrate 12 at 2000 rpm / 30 seconds using a spin coater and prebaked at 110 ° C./1800 seconds using a hot plate. Alternatively, the uncured resin layer 14A may be formed by sticking a resin film made of a phenol resin having a reaction rate of 16% to the substrate 12.

次に、未硬化樹脂層１４Ａが正方形にパターニングされるように、所定のマスク処理及び露光処理をおこなった後に現像処理をおこなう。そして、パターニングされた各未硬化樹脂層１４Ａの表面１４ａにＳｉＯ２をスパッタして、図２（ｂ）に示すように未硬化樹脂層１４Ａ上にＳｉＯ２層１６を成膜する。その後、未硬化樹脂層１４Ａを、オーブンを用いて１９０℃／６０分で加熱して完全に硬化された反応率１００％の樹脂層１４にすることで、図１に示した積層基板１０が得られる。 Next, development processing is performed after performing predetermined mask processing and exposure processing so that the uncured resin layer 14A is patterned into a square. Then, SiO 2 is sputtered on the surface 14a of each patterned uncured resin layer 14A to form a SiO 2 layer 16 on the uncured resin layer 14A as shown in FIG. Thereafter, the uncured resin layer 14A is heated at 190 ° C./60 minutes using an oven to be a completely cured resin layer 14 having a reaction rate of 100%, whereby the multilayer substrate 10 shown in FIG. 1 is obtained. It is done.

以上で説明した積層基板１０の製造方法においては、樹脂層１４の上面１４ａにＳｉＯ２層１６をスパッタ成膜する際、樹脂層１４は未硬化樹脂層１４Ａの状態であり、この未硬化樹脂層１４Ａの樹脂の反応率は１６％となっている。すなわち、樹脂が十分に硬化されていない状態でＳｉＯ２層１６がスパッタ成膜される。 In the method for manufacturing the laminated substrate 10 described above, when the SiO 2 layer 16 is formed by sputtering on the upper surface 14a of the resin layer 14, the resin layer 14 is in the state of the uncured resin layer 14A. The reaction rate of 14A resin is 16%. That is, the SiO 2 layer 16 is formed by sputtering in a state where the resin is not sufficiently cured.

このように樹脂の硬化が不十分な状態でＳｉＯ２をスパッタ成膜した場合、スパッタ成膜の初期段階において、未硬化樹脂層１４Ａの表面１４ａに微細な凹凸が生じる。これは、未硬化樹脂層１４Ａに飛来してきたＳｉＯ２粒子が、表面１４ａに衝突した際に、表面１４ａを窪ませるためであると考えられる。そして、表面１４ａに凹凸を有する未硬化樹脂層１４ＡにＳｉＯ２粒子をさらに堆積させていくと、表面１４ａの窪みにＳｉＯ２粒子が入り込んで、いわゆるアンカー効果が生じ、ＳｉＯ２層が未硬化樹脂層１４Ａと強く密着することとなる。従って、その後に未硬化樹脂層１４Ａを完全に熱硬化させて樹脂層１４を形成することで、積層基板１０においては、樹脂層１４とその上に成膜されたＳｉＯ２層１６との間の高い密着力が実現されている。なお、反応率は、１６％に限らず、０〜８５％の範囲内において適宜変更可能である。 When the SiO 2 film is formed by sputtering in such a state that the resin is not sufficiently cured, fine irregularities are generated on the surface 14a of the uncured resin layer 14A in the initial stage of the sputtering film formation. This is considered to be because the SiO 2 particles that have come to the uncured resin layer 14A cause the surface 14a to be depressed when colliding with the surface 14a. Then, when SiO 2 particles are further deposited on the uncured resin layer 14A having irregularities on the surface 14a, the SiO 2 particles enter into the depressions on the surface 14a, causing a so-called anchor effect, and the SiO 2 layer becomes uncured It will be in close contact with the layer 14A. Therefore, after that, the uncured resin layer 14A is completely heat-cured to form the resin layer 14, so that in the laminated substrate 10, between the resin layer 14 and the SiO 2 layer 16 formed thereon, High adhesion is realized. The reaction rate is not limited to 16% and can be changed as appropriate within a range of 0 to 85%.

なお、以上で説明した積層基板１０の製造方法では、ＳｉＯ２層１６をスパッタ成膜した後に、未硬化樹脂層１４Ａを加熱して樹脂の反応率を上げ、完全に熱硬化した樹脂層１４を得る工程を備えているため、後工程において、樹脂層１４からガスが発生する事態や樹脂層１４が収縮する事態を効果的に抑制されている。ただし、必要に応じて、未硬化樹脂層１４Ａのままの状態や樹脂層が完全には硬化してない状態で、積層基板の製造を終了してもよい。 In the method for manufacturing the laminated substrate 10 described above, after the SiO 2 layer 16 is formed by sputtering, the uncured resin layer 14A is heated to increase the reaction rate of the resin. Since the process to obtain is provided, the situation where gas is generated from the resin layer 14 and the situation where the resin layer 14 contracts are effectively suppressed in the subsequent process. However, if necessary, the production of the laminated substrate may be terminated in a state where the uncured resin layer 14A remains or the resin layer is not completely cured.

ここで、フェノール系樹脂等の樹脂の線膨張係数と、ＳｉＯ２層等の無機層の線膨張係数との間には２桁程度の大きなズレがある。そのため、完全に硬化された樹脂層上に無機層を形成した場合には、後工程の熱処理時において、その熱膨張係数の相異に起因する樹脂と無機層との剥離が生じ易い。そこで、上述した製造方法により樹脂層１４とＳｉＯ２層１６とが強固に密着した積層基板１０を作製することで、そのような剥離を効果的に抑制することができる。 Here, there is a large shift of about two orders of magnitude between the linear expansion coefficient of a resin such as a phenolic resin and the linear expansion coefficient of an inorganic layer such as an SiO 2 layer. Therefore, when an inorganic layer is formed on a completely cured resin layer, the resin and the inorganic layer are likely to be peeled off due to the difference in thermal expansion coefficient during the heat treatment in the subsequent step. Therefore, by making the laminated substrate 10 in which the resin layer 14 and the SiO 2 layer 16 are firmly adhered by the manufacturing method described above, such peeling can be effectively suppressed.

発明者らは、上述した樹脂層１４とＳｉＯ２層１６との間の密着力を確かめるために、以下に示す実験をおこなった。すなわち、図３の表に示すように、スパッタ前の樹脂反応率のみが異なる積層基板１０と同様の７種類のサンプル基板を準備して、それぞれのサンプル基板について密着力を比較した。 We have to ascertain the adhesion between the resin layer 14 and the SiO 2 layer 16 described above, was subjected to the following experiments. That is, as shown in the table of FIG. 3, seven types of sample substrates similar to the laminated substrate 10 that differ only in the resin reaction rate before sputtering were prepared, and the adhesion strength of each sample substrate was compared.

具体的には、スパッタ前にプリベーク以外の熱硬化処理をおこなっていないサンプル基板＃１（反応率０％）、スパッタ前に１９０℃で５分間の熱硬化処理をおこなったサンプル基板＃２（反応率３５％）、スパッタ前に１９０℃で２０分間の熱硬化処理をおこなったサンプル基板＃３（反応率７０％）、スパッタ前に１９０℃で２８分間の熱硬化処理をおこなったサンプル基板＃４（反応率８５％）を準備し、スパッタ成膜をおこなった。また、比較例として、スパッタ前に１９０℃で３０分間の熱硬化処理をおこなった比較サンプル基板＃５（反応率８６％）、スパッタ前に１９０℃で６０分間の熱硬化処理をおこなった比較サンプル基板＃６（反応率１００％）を準備し、スパッタ成膜をおこなった。   Specifically, sample substrate # 1 (reaction rate 0%) that has not been subjected to thermosetting treatment other than pre-baking before sputtering, and sample substrate # 2 (reaction that has been subjected to thermosetting treatment at 190 ° C. for 5 minutes before sputtering) 35%), sample substrate # 3 subjected to thermosetting treatment at 190 ° C. for 20 minutes before sputtering (reaction rate 70%), sample substrate # 4 subjected to thermosetting treatment at 190 ° C. for 28 minutes before sputtering (Reaction rate 85%) was prepared and sputter film formation was performed. Further, as a comparative example, comparative sample substrate # 5 (reaction rate 86%) subjected to thermosetting treatment at 190 ° C. for 30 minutes before sputtering, and comparative sample subjected to thermosetting treatment at 190 ° C. for 60 minutes before sputtering. Substrate # 6 (reaction rate 100%) was prepared and sputter deposition was performed.

上述のスパッタ成膜として、基板上に形成した樹脂層（所定の露光／現像処理により成形した６０個の正方形パターン）それぞれの上にＳｉＯ２層のをスパッタ成膜した。そして、吸水リフロー後における６０個の樹脂層からのＳｉＯ２層の剥離枚数を調べて剥離率を算出することにより、各サンプル基板＃１〜＃６の密着力を比較した。 As the above-mentioned sputtering film formation, a SiO 2 layer was formed by sputtering on each of the resin layers (60 square patterns formed by a predetermined exposure / development process) formed on the substrate. By calculating the release rate by examining the release number of the SiO 2 layer from 60 of the resin layer after water absorption reflow, and compared the adhesion of each sample substrate # 1 to # 6.

なお、吸水リフローの条件は、いわゆるＪＥＤＥＣ（Joint Electron Device Engineering Council）のレベル１の条件であり、すなわち、８５℃、８５％ＲＨのオーブンに１６８時間入れた後に、２６０℃のリフローを５回おこなった。   The water absorption reflow condition is a so-called JEDEC (Joint Electron Device Engineering Council) level 1 condition. That is, after placing in an oven at 85 ° C. and 85% RH for 168 hours, reflow at 260 ° C. is performed five times. It was.

また、反応率の測定には、サーモニコレー社製のフーリエ変換赤外分光装置（型式：ＮＥＸＵＳ６７０）を用い、フーリエ変換赤外分光（ＦＴＩＲ）法の全反射（ＡＴＲ）法を用いた。なお、ＡＴＲ法にはダイヤモンド全反射結晶を用いた。官能基（例えば、エポキシ基）のＩＲ吸収帯（例えば、９００ｃｍ−１）のスペクトル強度から吸収の相対面積値（２９２０ｃｍ−１付近のＣ−Ｈ伸縮振動を基準とした面積値（（９００ｃｍ−１の面積値）／（２９２０ｃｍ−１の面積値）×１０００として算出した値）であり、図３の表における「吸収ピークの面積値」）の減少が確認でき、官能基のピークの消滅した１９０℃、６０分の温度条件を硬化が完了した反応率１００％と規定した。一方、熱硬化処理をおこなっていないサンプル基板＃１の吸収の相対面積値を反応率０％とし、それに基づき相対評価によりその他のサンプル基板の反応率を算出した。 The reaction rate was measured using a Fourier transform infrared spectrometer (model: NEXUS670) manufactured by Thermo Nicolet and using the total reflection (ATR) method of the Fourier transform infrared spectroscopy (FTIR) method. A diamond total reflection crystal was used for the ATR method. Functional groups (e.g., epoxy groups) IR absorption band (e.g., 900 cm -1) relative area value of the absorption from the spectral intensity of the (2920 cm -1 area value based on the C-H stretching vibration in the vicinity of ((900 cm -1 Area value) / (area value of 2920 cm −1 ) × 1000)), a decrease in “Area value of absorption peak”) in the table of FIG. The temperature condition at 60 ° C. for 60 minutes was defined as a reaction rate of 100% when the curing was completed. On the other hand, the relative area value of the absorption of the sample substrate # 1 that was not subjected to the thermosetting treatment was set to a reaction rate of 0%, and the reaction rates of the other sample substrates were calculated based on the relative evaluation.

実験の結果は図３の表に示すとおりであった。すなわち、スパッタ前の反応率が０〜８５％の範囲内であったサンプル基板＃１〜＃４は剥離率が０であり、図４に示すように吸水リフロー後においても正方形パターンの剥離は観察されなかった。一方、スパッタ前の反応率がそれぞれ８６％及び１００％であった比較サンプル基板＃５，＃６は、剥離率が０より大きく（すなわち、１／６０及び３１／６０）、図５に示すように吸水リフロー後に正方形パターンが剥離していた。正方形パターンが剥離した積層基板５０の断面を観察してみると、図６に示すように、ＳｉＯ２層５６（すなわち、正方形パターン）が波打っており、基板５２上に形成された樹脂層５４とその上のＳｉＯ２層５６との間に隙間が生じていた。 The result of the experiment was as shown in the table of FIG. That is, sample substrates # 1 to # 4 whose reaction rate before sputtering was in the range of 0 to 85% had a peeling rate of 0, and the peeling of the square pattern was observed even after water absorption reflow as shown in FIG. Was not. On the other hand, the comparative sample substrates # 5 and # 6, in which the reaction rates before sputtering were 86% and 100%, respectively, had a peeling rate larger than 0 (that is, 1/60 and 31/60), as shown in FIG. After the water absorption reflow, the square pattern was peeled off. When the cross section of the laminated substrate 50 from which the square pattern is peeled is observed, as shown in FIG. 6, the SiO 2 layer 56 (that is, the square pattern) is undulated and the resin layer 54 formed on the substrate 52 is undulated. And a SiO 2 layer 56 thereabove.

以上の実験結果から、スパッタ前の反応率が０〜８５％の範囲内にある場合には、その反応率が８６％以上である場合に比べて、樹脂層とその上に成膜されたＳｉＯ２層との間の密着力が強化されることが確認された。 From the above experimental results, when the reaction rate before sputtering is in the range of 0 to 85%, compared with the case where the reaction rate is 86% or more, the resin layer and the SiO film formed thereon are formed. It was confirmed that the adhesion between the two layers was enhanced.

次に、本発明の実施形態に係る薄膜デバイスとして、図７及び図８に示す薄膜インダクタ２０について説明する。これらの図に示すように、薄膜インダクタ２０は、基板２２上に、第１絶縁層２４、第１磁性層２６、第２絶縁層２８、樹脂層３０、第３絶縁層３２、第２磁性層３４が順次積層された積層構造を有している。第１磁性層２６及び第２磁性層３４は共にコバルト（Ｃｏ）で構成されており、各絶縁層２４，２８，３２はそれぞれＳｉＯ２で構成されている。また、樹脂層３０は、上述した樹脂層１４と同様の樹脂層であり、ネガタイプ感光性で熱硬化性を有するフェノール系樹脂で構成されている。 Next, a thin film inductor 20 shown in FIGS. 7 and 8 will be described as a thin film device according to an embodiment of the present invention. As shown in these drawings, the thin film inductor 20 includes a first insulating layer 24, a first magnetic layer 26, a second insulating layer 28, a resin layer 30, a third insulating layer 32, and a second magnetic layer on a substrate 22. 34 has a laminated structure in which 34 are sequentially laminated. Both the first magnetic layer 26 and the second magnetic layer 34 are made of cobalt (Co), and the insulating layers 24, 28, and 32 are made of SiO 2 . The resin layer 30 is a resin layer similar to the resin layer 14 described above, and is composed of a phenolic resin having negative photosensitivity and thermosetting properties.

基板２２上には、第１絶縁層２４、第１磁性層２６及び第２絶縁層２８を介して、基板２２の面方向に引き回された平面コイル（電極配線）３６が形成されており、このコイル３６は樹脂層３０によって覆われている。コイル３６のそれぞれの端部３６ａ，３６ｂは、図示しないビアを介して、薄膜インダクタ２０の表面２０ａに形成された対応する外部電極端子３８Ａ，３８Ｂと電気的に接続されている（図７参照）。   On the substrate 22, a planar coil (electrode wiring) 36 led in the surface direction of the substrate 22 is formed via the first insulating layer 24, the first magnetic layer 26 and the second insulating layer 28. The coil 36 is covered with a resin layer 30. The respective end portions 36a and 36b of the coil 36 are electrically connected to corresponding external electrode terminals 38A and 38B formed on the surface 20a of the thin film inductor 20 through vias (not shown) (see FIG. 7). .

次に、上述した薄膜インダクタ２０を作製する手順について、図９を参照しつつ説明する。   Next, a procedure for manufacturing the above-described thin film inductor 20 will be described with reference to FIG.

薄膜インダクタ２０を作製する際には、まず、基板２２上に、図９（ａ）に示すように第１絶縁層２４、第１磁性層２６及び第２絶縁層２８を順次スパッタ成膜する。   When the thin film inductor 20 is manufactured, first, the first insulating layer 24, the first magnetic layer 26, and the second insulating layer 28 are sequentially formed on the substrate 22 by sputtering as shown in FIG.

次に、図９（ｂ）に示すように、第２絶縁層２８上にコイル３６をめっき形成する。具体的には、第２絶縁層２８の全面に亘ってシード層として機能するＴｉ及びＣｕをスパッタ成膜する。次に、このシード層上に、コイル３６の引き回し形状（すなわち、図７における破線形状）に対応する形状にパターニングされためっきレジスト層を形成する。その後、Ｃｕの電解めっき、めっきレジスト層の除去及び余分なシード層の除去を順次おこない、図９（ｂ）に示したコイル３６を形成する。   Next, as shown in FIG. 9B, a coil 36 is formed on the second insulating layer 28 by plating. Specifically, Ti and Cu functioning as a seed layer are formed by sputtering over the entire surface of the second insulating layer 28. Next, a plating resist layer patterned into a shape corresponding to the drawing shape of the coil 36 (that is, the broken line shape in FIG. 7) is formed on the seed layer. Thereafter, the electrolytic plating of Cu, the removal of the plating resist layer, and the removal of the excess seed layer are sequentially performed to form the coil 36 shown in FIG. 9B.

そして、図９（ｃ）に示すように、第２絶縁層２８上に形成されたコイル３６を覆うように、第２絶縁層２８の全面に反応率が１６％のフェノール系樹脂で構成された未硬化樹脂層３０Ａを形成する。この未硬化樹脂層３０Ａの形成には、上述した積層基板１０における未硬化樹脂層１４Ａと同様に、樹脂をプリベイクして形成する方法や樹脂フィルムを貼付する方法を採用することができる。   Then, as shown in FIG. 9C, the entire surface of the second insulating layer 28 is made of a phenol resin having a reaction rate of 16% so as to cover the coil 36 formed on the second insulating layer 28. An uncured resin layer 30A is formed. For the formation of the uncured resin layer 30A, as in the uncured resin layer 14A in the laminated substrate 10 described above, a method of pre-baking a resin or a method of attaching a resin film can be employed.

その後、図９（ｄ）に示すように、未硬化樹脂層３０Ａの表面３０ａにＳｉＯ２をスパッタして、未硬化樹脂層３０Ａ上に第３絶縁層３２を成膜する。さらに、この第３絶縁層３２上に第２磁性層３４をスパッタ成膜する。そして最後に、未硬化樹脂層３０Ａを、オーブンを用いて１９０℃／６０分で加熱して完全に硬化された反応率１００％の樹脂層３０にすることで、図８に示した薄膜インダクタ２０が得られる。 Thereafter, as shown in FIG. 9D, SiO 2 is sputtered on the surface 30a of the uncured resin layer 30A, and a third insulating layer 32 is formed on the uncured resin layer 30A. Further, a second magnetic layer 34 is formed on the third insulating layer 32 by sputtering. Finally, the uncured resin layer 30A is heated at 190 ° C./60 minutes using an oven to form a completely cured resin layer 30 with a reaction rate of 100%, whereby the thin film inductor 20 shown in FIG. Is obtained.

以上で説明した薄膜インダクタ２０の製造方法においては、樹脂層３０の上面３０ａにＳｉＯ２で構成された第３絶縁層３２をスパッタ成膜する際、樹脂層３０は未硬化樹脂層３０Ａの状態であり、この未硬化樹脂層３０Ａの樹脂の反応率は１６％となっている。すなわち、樹脂が十分に硬化されていない状態で第３絶縁層３２がスパッタ成膜される。 In the method of manufacturing the thin film inductor 20 described above, when the third insulating layer 32 made of SiO 2 is formed by sputtering on the upper surface 30a of the resin layer 30, the resin layer 30 is in the state of the uncured resin layer 30A. Yes, the resin reaction rate of the uncured resin layer 30A is 16%. That is, the third insulating layer 32 is formed by sputtering in a state where the resin is not sufficiently cured.

このように樹脂の硬化が不十分な状態でＳｉＯ２をスパッタ成膜した場合は、上述した積層基板１０の場合と同様に、第３絶縁層３２が未硬化樹脂層３０Ａと強く密着することとなる。従って、その後に未硬化樹脂層３０Ａを完全に熱硬化させて樹脂層３０を形成することで、薄膜インダクタ２０においては、樹脂層３０とその上に成膜された第３絶縁層３２との間の高い密着力が実現されている。 When the SiO 2 film is sputtered in such a state that the resin is not sufficiently cured, the third insulating layer 32 is in close contact with the uncured resin layer 30A as in the case of the laminated substrate 10 described above. Become. Therefore, by subsequently thermally curing the uncured resin layer 30A to form the resin layer 30, in the thin film inductor 20, between the resin layer 30 and the third insulating layer 32 formed thereon. High adhesion is realized.

また、上述した薄膜インダクタ２０の製造方法においては、無機層である第３絶縁層３２がＳｉＯ２（無機絶縁材料）で構成されており、この第３絶縁層３２を樹脂層３０の上面３０ａにスパッタ成膜した後に、第３絶縁層３２上に第２磁性層３４を積層し、その後、未硬化樹脂層３０Ａを加熱して熱硬化性樹脂の反応率を上げている。すなわち、樹脂層３０と第２磁性層３４との間に無機絶縁材料で構成されたＳｉＯ２層３２が介在するため、樹脂層３０の溶剤が第２磁性層３４に悪影響を与える事態等を効果的に回避することができる。 In the method of manufacturing the thin film inductor 20 described above, the third insulating layer 32 that is an inorganic layer is made of SiO 2 (inorganic insulating material), and the third insulating layer 32 is formed on the upper surface 30 a of the resin layer 30. After the sputter deposition, the second magnetic layer 34 is laminated on the third insulating layer 32, and then the uncured resin layer 30A is heated to increase the reaction rate of the thermosetting resin. That is, since the SiO 2 layer 32 made of an inorganic insulating material is interposed between the resin layer 30 and the second magnetic layer 34, the situation where the solvent of the resin layer 30 adversely affects the second magnetic layer 34 is effective. Can be avoided.

なお、反応率は、１６％に限らず、上述した実験によって確認されたように、０〜８５％の範囲内において適宜変更可能である。また、無機層として、第３絶縁層３２の代わりにＣｏ（無機磁性材料）で構成された第２磁性層３４を樹脂層３０の表面３０ａに直接スパッタ成膜してもよい。この場合でも、樹脂層３０と第２磁性層３４との間の高い密着力が実現される上、樹脂層３０と第２磁性層３４との間に第３絶縁層３２が介在する場合に比べ、製造工程が削減される。   The reaction rate is not limited to 16%, and can be appropriately changed within the range of 0 to 85% as confirmed by the above-described experiment. Further, as the inorganic layer, the second magnetic layer 34 made of Co (inorganic magnetic material) instead of the third insulating layer 32 may be directly deposited on the surface 30 a of the resin layer 30 by sputtering. Even in this case, a high adhesive force between the resin layer 30 and the second magnetic layer 34 is realized, and compared with the case where the third insulating layer 32 is interposed between the resin layer 30 and the second magnetic layer 34. Manufacturing process is reduced.

次に、本発明の実施形態に係る薄膜デバイスとして、図１０に示す薄膜トランス４０について説明する。この図に示すように、薄膜トランス４０は、上述した薄膜インダクタ２０の積層構造を二段にしたものである。すなわち、薄膜トランス４０は、基板２２上に、第１絶縁層２４、第１磁性層２６、第２絶縁層２８、樹脂層（第１樹脂層）３０、樹脂層（第２樹脂層）３１、第３絶縁層３２、第２磁性層３４が順次積層された積層構造を有している。各樹脂層３０，３１には、基板２２の面方向に引き回された平面コイル（電極配線）３６が形成されている。なお、図示は省略しているが、この薄膜トランス４０においては、上段のコイル３６の端部３６ａ，３６ｂと、下段のコイル３６の端部３６ａ，３６ｂとはそれぞれ異なる外部電極端子３８Ａ，３８Ｂと電気的に接続されている。   Next, a thin film transformer 40 shown in FIG. 10 will be described as a thin film device according to an embodiment of the present invention. As shown in this figure, a thin film transformer 40 is a structure in which the laminated structure of the above-described thin film inductor 20 is arranged in two stages. That is, the thin film transformer 40 includes a first insulating layer 24, a first magnetic layer 26, a second insulating layer 28, a resin layer (first resin layer) 30, a resin layer (second resin layer) 31 on the substrate 22. The third insulating layer 32 and the second magnetic layer 34 are sequentially stacked. Each of the resin layers 30 and 31 is formed with a planar coil (electrode wiring) 36 drawn in the surface direction of the substrate 22. Although not shown, in this thin film transformer 40, the end portions 36a and 36b of the upper coil 36 and the end portions 36a and 36b of the lower coil 36 are different from each other with external electrode terminals 38A and 38B. Electrically connected.

次に、この薄膜トランス４０を作製する手順について、図１１を参照しつつ説明する。   Next, a procedure for manufacturing the thin film transformer 40 will be described with reference to FIG.

薄膜トランス４０を作製する際には、まず、図９に示した薄膜インダクタ２０の製造方法と同様に、基板２２上に第１絶縁層２４、第１磁性層２６及び第２絶縁層２８を順次スパッタ成膜した後、第２絶縁層２８上にコイル（第１電極配線）３６を形成し、反応率が１６％のフェノール系樹脂で構成された未硬化樹脂層３０Ａでコイル３６を覆う。そして、未硬化樹脂層３０Ａを熱硬化させて樹脂層３０にした後、図１１（ａ）に示すように、樹脂層３０の上に、コイル（第２電極配線）３６を形成する。そして、図１１（ｂ）に示すように、樹脂層３０上に形成されたコイル３６を覆うように、樹脂層３０の全面に反応率が１６％のフェノール系樹脂で構成された未硬化樹脂層３１Ａを形成する。   When manufacturing the thin film transformer 40, first, the first insulating layer 24, the first magnetic layer 26, and the second insulating layer 28 are sequentially formed on the substrate 22 in the same manner as the method of manufacturing the thin film inductor 20 shown in FIG. After the sputter film formation, a coil (first electrode wiring) 36 is formed on the second insulating layer 28, and the coil 36 is covered with an uncured resin layer 30A made of a phenol resin having a reaction rate of 16%. Then, after the uncured resin layer 30A is thermally cured to form the resin layer 30, a coil (second electrode wiring) 36 is formed on the resin layer 30 as shown in FIG. And as shown in FIG.11 (b), the uncured resin layer comprised by the phenolic resin whose reaction rate is 16% over the whole surface of the resin layer 30 so that the coil 36 formed on the resin layer 30 may be covered. 31A is formed.

その後、図１１（ｃ）に示すように、未硬化樹脂層３１Ａの表面３１ａにＳｉＯ２をスパッタして、上段の未硬化樹脂層３１Ａ上に第３絶縁層３２を成膜する。さらに、この第３絶縁層３２上に第２磁性層３４をスパッタ成膜する。そして最後に、未硬化樹脂層３１Ａを、オーブンを用いて１９０℃／６０分で加熱して完全に硬化された反応率１００％の樹脂層３１にすることで、図１０に示した薄膜トランス４０が得られる。 Thereafter, as shown in FIG. 11C, SiO 2 is sputtered on the surface 31a of the uncured resin layer 31A to form a third insulating layer 32 on the upper uncured resin layer 31A. Further, a second magnetic layer 34 is formed on the third insulating layer 32 by sputtering. Finally, the uncured resin layer 31A is heated at 190 ° C./60 minutes using an oven to form a completely cured resin layer 31 with a reaction rate of 100%, whereby the thin film transformer 40 shown in FIG. Is obtained.

以上で説明した薄膜トランス４０の製造方法においては、樹脂層３１の上面３１ａにＳｉＯ２で構成された第３絶縁層３２をスパッタ成膜する際、樹脂層３１は未硬化樹脂層３１Ａの状態であり、この未硬化樹脂層３１Ａの樹脂の反応率は１６％となっている。すなわち、樹脂が十分に硬化されていない状態で第３絶縁層３２がスパッタ成膜される。 In the method of manufacturing the thin film transformer 40 described above, when the third insulating layer 32 made of SiO 2 is formed by sputtering on the upper surface 31a of the resin layer 31, the resin layer 31 is in the state of the uncured resin layer 31A. Yes, the reaction rate of the resin of the uncured resin layer 31A is 16%. That is, the third insulating layer 32 is formed by sputtering in a state where the resin is not sufficiently cured.

このように樹脂の硬化が不十分な状態でＳｉＯ２をスパッタ成膜した場合は、上述した積層基板１０及び薄膜インダクタ２０の場合と同様に、第３絶縁層３２が未硬化樹脂層３１Ａと強く密着することとなる。従って、その後に未硬化樹脂層３１Ａを完全に熱硬化させて樹脂層３１を形成することで、薄膜トランス４０においては、樹脂層３１とその上に成膜された第３絶縁層３２との間の高い密着力が実現されている。 When the SiO 2 film is sputtered in such a state that the resin is not sufficiently cured, the third insulating layer 32 is stronger than the uncured resin layer 31A as in the case of the multilayer substrate 10 and the thin film inductor 20 described above. It will be in close contact. Therefore, by subsequently completely curing the uncured resin layer 31A to form the resin layer 31, in the thin film transformer 40, between the resin layer 31 and the third insulating layer 32 formed thereon. High adhesion is realized.

また、上述した薄膜トランス４０の製造方法においては、無機層である第３絶縁層３２がＳｉＯ２（無機絶縁材料）で構成されており、この第３絶縁層３２を樹脂層３１の上面３１ａにスパッタ成膜した後に、第３絶縁層３２上に第２磁性層３４を積層し、その後、未硬化樹脂層３１Ａを加熱して熱硬化性樹脂の反応率を上げている。すなわち、樹脂層３１と第２磁性層３４との間に無機絶縁材料で構成されたＳｉＯ２層３２が介在するため、樹脂層３１の溶剤が第２磁性層３４に悪影響を与える事態等を効果的に回避することができる。 In the method for manufacturing the thin film transformer 40 described above, the third insulating layer 32 that is an inorganic layer is made of SiO 2 (inorganic insulating material), and the third insulating layer 32 is formed on the upper surface 31 a of the resin layer 31. After the sputter film formation, the second magnetic layer 34 is laminated on the third insulating layer 32, and then the uncured resin layer 31A is heated to increase the reaction rate of the thermosetting resin. That is, since the SiO 2 layer 32 made of an inorganic insulating material is interposed between the resin layer 31 and the second magnetic layer 34, the situation where the solvent of the resin layer 31 adversely affects the second magnetic layer 34 is effective. Can be avoided.

なお、反応率は、１６％に限らず、上述した実験によって確認されたように、０〜８５％の範囲内において適宜変更可能である。また、無機層として、第３絶縁層３２の代わりにＣｏ（無機磁性材料）で構成された第２磁性層３４を樹脂層３０の表面３０ａに直接スパッタ成膜してもよい。この場合でも、樹脂層３１と第２磁性層３４との間の高い密着力が実現される上、樹脂層３１と第２磁性層３４との間に第３絶縁層３２が介在する場合に比べ、製造工程が削減される。   The reaction rate is not limited to 16%, and can be appropriately changed within the range of 0 to 85% as confirmed by the above-described experiment. Further, as the inorganic layer, the second magnetic layer 34 made of Co (inorganic magnetic material) instead of the third insulating layer 32 may be directly deposited on the surface 30 a of the resin layer 30 by sputtering. Even in this case, a high adhesive force between the resin layer 31 and the second magnetic layer 34 is realized, and compared with the case where the third insulating layer 32 is interposed between the resin layer 31 and the second magnetic layer 34. Manufacturing process is reduced.

本発明は上記実施形態に限定されるものではなく、様々な変形が可能である。例えば、薄膜デバイスは、薄膜インダクタや薄膜トランスに限らず、樹脂層の表面に無機層が成膜されるものであれば、例えば薄膜コンデンサや薄膜フィルタ等であってもよい。無機層は、ＳｉＯ２やＣｏ以外の無機物で構成されていてもよく、例えばＣｏ−Ｚｒ−Ｔａ系や、Ｃｏ−Ｚｒ−Ｔａ系の非晶質金属磁性合金や、Ｆｅ系金属磁性体や、フェライト等の酸化物磁性体や、Ａｌ２Ｏ３や、ＡｌＮや、ＳｉＯＮや、ＳｉＮ等であってもよい。さらに樹脂層は、フェノール系樹脂に限らず、熱硬化性樹脂であれば、例えばエポキシ樹脂やポリイミド樹脂等であってもよい。 The present invention is not limited to the above embodiment, and various modifications are possible. For example, the thin film device is not limited to a thin film inductor or a thin film transformer, and may be, for example, a thin film capacitor or a thin film filter as long as an inorganic layer is formed on the surface of the resin layer. The inorganic layer may be composed of an inorganic material other than SiO 2 or Co, such as Co—Zr—Ta, Co—Zr—Ta amorphous metal magnetic alloy, Fe metal magnetic, It may be an oxide magnetic material such as ferrite, Al2O3, AlN, SiON, SiN, or the like. Furthermore, the resin layer is not limited to a phenol resin, and may be, for example, an epoxy resin or a polyimide resin as long as it is a thermosetting resin.

本発明の実施形態に係る積層基板を示した断面図である。It is sectional drawing which showed the laminated substrate which concerns on embodiment of this invention. 図１に示した積層基板を作製する手順を示した図である。It is the figure which showed the procedure which produces the laminated substrate shown in FIG. 密着力を確認するための実験の結果をまとめた表である。It is the table | surface which put together the result of the experiment for confirming adhesive force. 剥離が生じていないサンプル基板の表面写真である。It is the surface photograph of the sample board | substrate which has not peeled. 剥離が生じている比較サンプル基板の表面写真である。It is the surface photograph of the comparative sample board | substrate which has peeled. 比較サンプル基板の模式断面図である。It is a schematic cross section of a comparative sample substrate. 本発明の実施形態に係る薄膜インダクタを示した平面図である。It is the top view which showed the thin film inductor which concerns on embodiment of this invention. 図７に示した薄膜インダクタのＶＩＩＩ−ＶＩＩＩ線断面図である。It is the VIII-VIII sectional view taken on the line of the thin film inductor shown in FIG. 図７に示した薄膜インダクタを作製する手順を示した図である。It is the figure which showed the procedure which produces the thin film inductor shown in FIG. 本発明の実施形態に係る薄膜トランスを示した要部断面図である。It is principal part sectional drawing which showed the thin film transformer which concerns on embodiment of this invention. 図１０に示した薄膜インダクタを作製する手順を示した図である。It is the figure which showed the procedure which produces the thin film inductor shown in FIG.

符号の説明Explanation of symbols

１０…積層基板、１２…基板、１４…樹脂層、１４Ａ…未硬化樹脂層、１６…ＳｉＯ２層、２０…薄膜インダクタ、２２…基板、３０，３１…樹脂層、３０Ａ，３１Ａ…未硬化樹脂層、３２…第３絶縁層、３６…コイル、４０…薄膜トランス。
10 ... laminated substrate, 12 ... substrate, 14 ... resin layer, 14A ... uncured resin layer, 16 ... SiO 2 layer, 20 ... thin film inductor, 22 ... substrate, 30, 31 ... resin layer, 30A, 31A ... uncured resin Layer, 32 ... third insulating layer, 36 ... coil, 40 ... thin film transformer.

Claims (7)

基板上に、反応率が０〜８５％である熱硬化性樹脂で構成された樹脂層を形成する工程と、
前記樹脂層の上面に無機層をスパッタ成膜する工程とを備える、積層基板の製造方法。 Forming a resin layer composed of a thermosetting resin having a reaction rate of 0 to 85% on a substrate;
And a step of sputtering an inorganic layer on the upper surface of the resin layer. 前記無機層をスパッタ成膜した後に、前記樹脂層を加熱して前記熱硬化性樹脂の反応率を上げる工程をさらに備える、請求項１に記載の積層基板の製造方法。   The method for manufacturing a laminated substrate according to claim 1, further comprising a step of heating the resin layer to increase a reaction rate of the thermosetting resin after the inorganic layer is formed by sputtering. 基板上に、電極配線を形成する工程と、
前記基板上に、前記電極配線を覆うように、反応率が０〜８５％である熱硬化性樹脂で構成された樹脂層を形成する工程と、
前記樹脂層の上面に無機層をスパッタ成膜する工程と、
前記無機層をスパッタ成膜した後に、前記樹脂層を加熱して前記熱硬化性樹脂の反応率を上げる工程とを備える、薄膜デバイスの製造方法。 Forming electrode wiring on the substrate;
Forming a resin layer made of a thermosetting resin having a reaction rate of 0 to 85% on the substrate so as to cover the electrode wiring;
Forming an inorganic layer on the upper surface of the resin layer by sputtering;
And a step of heating the resin layer to increase the reaction rate of the thermosetting resin after the inorganic layer is formed by sputtering. 基板上に、第１電極配線を形成する工程と、
前記基板上に、前記第１電極配線を覆うように第１樹脂層を形成する工程と、
前記第１樹脂層上に、第２電極配線を形成する工程と、
前記第１樹脂層上に、前記第２電極配線を覆うように、反応率が０〜８５％である熱硬化性樹脂で構成された第２樹脂層を形成する工程と、
前記第２樹脂層の上面に無機層をスパッタ成膜する工程と、
前記無機層をスパッタ成膜した後に、前記第２樹脂層を加熱して前記熱硬化性樹脂の反応率を上げる工程とを備える、薄膜デバイスの製造方法。 Forming a first electrode wiring on the substrate;
Forming a first resin layer on the substrate so as to cover the first electrode wiring;
Forming a second electrode wiring on the first resin layer;
Forming a second resin layer formed of a thermosetting resin having a reaction rate of 0 to 85% on the first resin layer so as to cover the second electrode wiring;
Forming an inorganic layer on the upper surface of the second resin layer by sputtering;
And a step of heating the second resin layer to increase a reaction rate of the thermosetting resin after the inorganic layer is formed by sputtering. 前記無機層が無機絶縁材料で構成されており、この無機層を前記樹脂層の上面にスパッタ成膜した後に、前記無機層上に磁性層を積層し、その後、前記樹脂層を加熱して前記熱硬化性樹脂の反応率を上げる工程をおこなう、請求項３に記載の薄膜デバイスの製造方法。   The inorganic layer is made of an inorganic insulating material. After the inorganic layer is sputter-deposited on the upper surface of the resin layer, a magnetic layer is laminated on the inorganic layer, and then the resin layer is heated to The manufacturing method of the thin film device of Claim 3 which performs the process which raises the reaction rate of a thermosetting resin. 前記無機層が無機絶縁材料で構成されており、この無機層を前記第２樹脂層の上面にスパッタ成膜した後に、前記無機層上に磁性層を積層し、その後、前記第２樹脂層を加熱して前記熱硬化性樹脂の反応率を上げる工程をおこなう、請求項４に記載の薄膜デバイスの製造方法。   The inorganic layer is composed of an inorganic insulating material. After the inorganic layer is sputter-deposited on the upper surface of the second resin layer, a magnetic layer is laminated on the inorganic layer, and then the second resin layer is formed. The manufacturing method of the thin film device of Claim 4 which performs the process which raises the reaction rate of the said thermosetting resin by heating. 前記無機層が無機磁性材料で構成されている、請求項３又は４に記載の薄膜デバイスの製造方法。

The manufacturing method of the thin film device of Claim 3 or 4 with which the said inorganic layer is comprised with the inorganic magnetic material.

JP2005271121A 2005-09-16 2005-09-16 Method of manufacturing laminated substrate and thin film device Withdrawn JP2007081350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005271121A JP2007081350A (en) 2005-09-16 2005-09-16 Method of manufacturing laminated substrate and thin film device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005271121A JP2007081350A (en) 2005-09-16 2005-09-16 Method of manufacturing laminated substrate and thin film device

Publications (1)

Publication Number Publication Date
JP2007081350A true JP2007081350A (en) 2007-03-29

Family

ID=37941289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005271121A Withdrawn JP2007081350A (en) 2005-09-16 2005-09-16 Method of manufacturing laminated substrate and thin film device

Country Status (1)

Country Link
JP (1) JP2007081350A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010002755A3 (en) * 2008-06-30 2010-04-01 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid barrier films
US8846169B2 (en) 2007-12-28 2014-09-30 3M Innovative Properties Company Flexible encapsulating film systems
JP2019140349A (en) * 2018-02-15 2019-08-22 Tdk株式会社 Coil component and method of manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8846169B2 (en) 2007-12-28 2014-09-30 3M Innovative Properties Company Flexible encapsulating film systems
WO2010002755A3 (en) * 2008-06-30 2010-04-01 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid barrier films
US9481927B2 (en) 2008-06-30 2016-11-01 3M Innovative Properties Company Method of making inorganic or inorganic/organic hybrid barrier films
JP2019140349A (en) * 2018-02-15 2019-08-22 Tdk株式会社 Coil component and method of manufacturing the same
JP7124333B2 (en) 2018-02-15 2022-08-24 Tdk株式会社 Coil component and its manufacturing method

Similar Documents

Publication Publication Date Title
CN100524020C (en) Method for forming photosensitive polyimide pattern and electronic devices having the pattern
JP4317107B2 (en) Electronic device having organic material insulating layer and method for manufacturing the same
JP6233445B2 (en) Electronic components
JP3096061B2 (en) Manufacturing method of microbump for flip chip mounting
TW201306199A (en) Semiconductor substrate for making semiconductor package device and manufacturing method thereof
JP2007081350A (en) Method of manufacturing laminated substrate and thin film device
JP4959387B2 (en) Insulating structure and manufacturing method thereof
JP5929540B2 (en) Electronic components
JP4401527B2 (en) Manufacturing method of semiconductor chip
JP2006114552A (en) Method for manufacturing electronic part
JP3800405B2 (en) Multilayer circuit board manufacturing method
JP2007273836A (en) Thin-film inductor and its manufacturing method
JPH06120659A (en) Multilayer wiring structure
JP2677411B2 (en) Method for manufacturing thin-film magnetic head
JP5073868B1 (en) Method of manufacturing transfer mold and transfer mold
JP6132641B2 (en) Electrode structure of semiconductor module and manufacturing method thereof
JP5413035B2 (en) Multilayer wiring board manufacturing method, laminated multilayer wiring board
CN101800191A (en) Method for preparing medium bridge by using polyimide
JP2000294443A (en) Thin film device and manufacture thereof
JPH0620230A (en) Thin-film magnetic head and its manufacture
JPH08107056A (en) Method of levelling of resist film
JP2016201414A (en) Semiconductor device and manufacturing method of the same
JP2894997B2 (en) Manufacturing method of printed wiring board
JP6040834B2 (en) Resin convex portion forming method and wiring board manufacturing method
JP3147835B2 (en) Method for manufacturing semiconductor device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20081202