JP2007073793A - Light amount measuring device, exposure system and device manufacturing method - Google Patents

Light amount measuring device, exposure system and device manufacturing method Download PDF

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JP2007073793A
JP2007073793A JP2005260206A JP2005260206A JP2007073793A JP 2007073793 A JP2007073793 A JP 2007073793A JP 2005260206 A JP2005260206 A JP 2005260206A JP 2005260206 A JP2005260206 A JP 2005260206A JP 2007073793 A JP2007073793 A JP 2007073793A
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Koji Muramatsu
浩二 村松
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Nikon Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light amount measuring device capable of reliably detecting light impinging on a given surface at a relatively large incident angle to precisely measure light amount distribution on the given surface. <P>SOLUTION: The light amount measuring device comprises an optically transparent member (31) disposed on a given surface or in the vicinity thereof, and a light detecting device (32) for detecting the light passing through the optically transparent member. The light detecting side of the optically transparent member is provided with a prism condenser (31b) for condensing the light passing through the optically transparent member through a prismatic action to lead to the light detecting device. The prism condenser has for example an optical surface (31ba) corresponding to a circular conical surface and an optical surface (31bb) in parallel with the given surface. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、光量計測装置、露光装置、およびデバイスの製造方法に関し、特に半導体素子や液晶表示素子などのデバイスをフォトリソグラフィ工程で製造する際に使用される露光装置における露光光量分布の計測に関するものである。   The present invention relates to a light amount measuring apparatus, an exposure apparatus, and a device manufacturing method, and more particularly to measurement of an exposure light amount distribution in an exposure apparatus used when manufacturing a device such as a semiconductor element or a liquid crystal display element in a photolithography process. It is.

半導体素子等を製造するためのフォトリソグラフィ工程において、マスク（またはレチクル）のパターン像を、投影光学系を介して、感光性基板（フォトレジストが塗布されたウェハ、ガラスプレート等）上に投影露光する露光装置が使用されている。露光装置では、半導体素子等の集積度が向上するにつれて、投影光学系に要求される解像力（解像度）が益々高まっている。   In a photolithography process for manufacturing semiconductor elements, etc., a mask (or reticle) pattern image is projected and exposed on a photosensitive substrate (a wafer coated with a photoresist, a glass plate, etc.) via a projection optical system. An exposure apparatus is used. In the exposure apparatus, as the degree of integration of semiconductor elements and the like is improved, the resolving power (resolution) required for the projection optical system is increasing.

投影光学系の解像力に対する要求を満足するには、照明光（露光光）の波長λを短くするとともに、投影光学系の像側開口数ＮＡを大きくする必要がある。具体的には、投影光学系の解像度は、ｋ・λ／ＮＡ（ｋはプロセス係数）で表される。また、像側開口数ＮＡは、投影光学系と感光性基板との間の媒質（通常は空気などの気体）の屈折率をｎとし、感光性基板への最大入射角をθとすると、ｎ・sinθで表される。   In order to satisfy the requirement for the resolution of the projection optical system, it is necessary to shorten the wavelength λ of the illumination light (exposure light) and increase the image-side numerical aperture NA of the projection optical system. Specifically, the resolution of the projection optical system is represented by k · λ / NA (k is a process coefficient). The image-side numerical aperture NA is n, where n is the refractive index of the medium (usually a gas such as air) between the projection optical system and the photosensitive substrate, and θ is the maximum incident angle on the photosensitive substrate.・ It is expressed by sinθ.

この場合、最大入射角θを大きくすることにより像側開口数の増大を図ろうとすると、感光性基板への入射角および投影光学系からの射出角が大きくなり、光学面での反射損失が増大して、大きな実効的な像側開口数を確保することはできない。そこで、投影光学系と感光性基板との間の光路中に屈折率の高い液体のような媒質を満たすことにより像側開口数の増大を図る液浸技術が知られている（たとえば特許文献１）。   In this case, if the maximum incident angle θ is increased to increase the image-side numerical aperture, the incident angle to the photosensitive substrate and the exit angle from the projection optical system increase, and the reflection loss on the optical surface increases. Thus, a large effective image-side numerical aperture cannot be ensured. Therefore, an immersion technique is known in which an image-side numerical aperture is increased by filling a medium such as a liquid having a high refractive index in the optical path between the projection optical system and the photosensitive substrate (for example, Patent Document 1). ).

国際公開第ＷＯ２００４／０１９１２８号パンフレットInternational Publication No. WO2004 / 019128 Pamphlet

露光装置では、微細なパターンを高精度に投影露光するために、光量計測装置を用いて投影光学系の像面（ひいては感光性基板の露光領域）における光量分布を計測し、必要に応じて制御することが必要である。しかしながら、特に像側開口数の大きい液浸型の投影光学系を用いる露光装置の場合、所定の値以上の大きな入射角度で投影光学系の像面に達する光を検出することが困難であり、ひいては投影光学系の像面における光量分布を高精度に計測することが困難である。   The exposure system measures the light intensity distribution on the image plane of the projection optical system (and hence the exposure area of the photosensitive substrate) using the light intensity measurement device, and controls it as necessary to project and expose fine patterns with high accuracy. It is necessary to. However, particularly in the case of an exposure apparatus that uses an immersion type projection optical system having a large image-side numerical aperture, it is difficult to detect light that reaches the image plane of the projection optical system at a large incident angle of a predetermined value or more. As a result, it is difficult to measure the light amount distribution on the image plane of the projection optical system with high accuracy.

本発明は、前述の課題に鑑みてなされたものであり、比較的大きな入射角度で所定面に達する光も確実に検出して、所定面における光量分布を高精度に計測することのできる光量計測装置を提供することを目的とする。また、本発明は、たとえば液浸型の投影光学系の像面における光量分布を高精度に計測する光量計測装置を用いて、微細なパターンを高精度に投影露光することのできる露光装置を提供することを目的とする。   The present invention has been made in view of the above-mentioned problems, and is capable of reliably detecting light reaching a predetermined surface at a relatively large incident angle and measuring the light amount distribution on the predetermined surface with high accuracy. An object is to provide an apparatus. The present invention also provides an exposure apparatus capable of projecting and exposing a fine pattern with high accuracy by using, for example, a light amount measurement device that measures the light amount distribution on the image plane of an immersion type projection optical system with high accuracy. The purpose is to do.

前記課題を解決するために、本発明の第１形態では、所定面における光量を計測する光量計測装置において、
前記所定面またはその近傍に配置された光透過部材と、
前記所定面および前記光透過部材を介した光を検出する光検出器とを備え、
前記光透過部材の光検出器側には、前記所定面および前記光透過部材を介した光をプリズム作用により集光して前記光検出器へ導くためのプリズム集光部が設けられていることを特徴とする光量計測装置を提供する。 In order to solve the above-mentioned problem, in the first embodiment of the present invention, in the light amount measuring device for measuring the light amount on the predetermined surface,
A light transmissive member disposed on or near the predetermined surface;
A photodetector for detecting light through the predetermined surface and the light transmitting member;
A prism condensing part for condensing light through the predetermined surface and the light transmitting member by a prism action and guiding the light to the light detector is provided on the light detector side of the light transmitting member. The light quantity measuring device characterized by the above is provided.

本発明の第２形態では、投影光学系を介して所定のパターンを感光性基板に露光する露光装置において、
前記感光性基板上の露光領域における光量を計測するための第１形態の光量計測装置を備えていることを特徴とする露光装置を提供する。 In the second embodiment of the present invention, in an exposure apparatus that exposes a predetermined pattern on a photosensitive substrate via a projection optical system,
There is provided an exposure apparatus comprising a first light quantity measuring device for measuring a light quantity in an exposure region on the photosensitive substrate.

本発明の第３形態では、第２形態の露光装置を用いて、前記所定のパターンを前記感光性基板に露光する露光工程と、
前記露光工程により露光された前記感光性基板を現像する現像工程とを含むことを特徴とするデバイスの製造方法を提供する。 In the third embodiment of the present invention, using the exposure apparatus of the second embodiment, an exposure step of exposing the predetermined pattern to the photosensitive substrate;
And a development step of developing the photosensitive substrate exposed by the exposure step. A device manufacturing method is provided.

本発明の光量計測装置では、光透過部材の光検出器側にプリズム集光部が設けられているので、光透過部材を介した光がプリズム集光部のプリズム作用により集光されて光検出器へ導かれる。その結果、所定の値以上の大きな入射角度で所定面に達した光も光検出器で検出されるので、例えばピンホールのような開口を有する光透過部材と光検出器とを所定面に沿って二次元的に移動させつつ所定面における光量分布を計測することができる。   In the light quantity measuring device of the present invention, since the prism condensing part is provided on the light detector side of the light transmitting member, the light passing through the light transmitting member is condensed by the prism action of the prism condensing part to detect light. Led to the vessel. As a result, light that reaches a predetermined surface at a large incident angle that is equal to or greater than a predetermined value is also detected by the photodetector, so that, for example, a light transmitting member having an opening such as a pinhole and the photodetector are moved along the predetermined surface. Thus, the light quantity distribution on the predetermined surface can be measured while moving in a two-dimensional manner.

このように、本発明の光量計測装置では、比較的大きな入射角度で所定面に達する光も確実に検出して、所定面における光量分布を高精度に計測することができる。また、本発明の露光装置では、たとえば液浸型の投影光学系の像面における光量分布を高精度に計測する光量計測装置を用いて、微細なパターンを高精度に投影露光することができ、ひいては良好なデバイスを高精度に製造することができる。   As described above, the light quantity measuring device of the present invention can reliably detect the light reaching the predetermined surface at a relatively large incident angle, and can measure the light quantity distribution on the predetermined surface with high accuracy. Further, in the exposure apparatus of the present invention, a fine pattern can be projected and exposed with high precision using, for example, a light quantity measuring apparatus that measures the light quantity distribution on the image plane of an immersion type projection optical system with high precision. As a result, a good device can be manufactured with high accuracy.

本発明の実施形態を、添付図面に基づいて説明する。図１は、本発明の実施形態にかかる露光装置の構成を概略的に示す図である。図１では、Ｘ軸およびＹ軸がウェハＷに対して平行な方向に設定され、Ｚ軸がウェハＷに対して直交する方向に設定されている。さらに具体的には、ＸＹ平面が水平面に平行に設定され、＋Ｚ軸が鉛直方向に沿って上向きに設定されている。   Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the X axis and the Y axis are set in a direction parallel to the wafer W, and the Z axis is set in a direction orthogonal to the wafer W. More specifically, the XY plane is set parallel to the horizontal plane, and the + Z axis is set upward along the vertical direction.

本実施形態の露光装置は、図１に示すように、たとえば露光光源であるＡｒＦエキシマレーザ光源を含み、オプティカル・インテグレータ（ホモジナイザー）、視野絞り、コンデンサレンズ等から構成される照明光学系１を備えている。光源から射出された波長１９３ｎｍの紫外パルス光からなる露光光（露光ビーム）ＩＬは、照明光学系１を通過し、レチクル（マスク）Ｒを照明する。   As shown in FIG. 1, the exposure apparatus of this embodiment includes, for example, an ArF excimer laser light source that is an exposure light source, and includes an illumination optical system 1 that includes an optical integrator (homogenizer), a field stop, a condenser lens, and the like. ing. Exposure light (exposure beam) IL composed of ultraviolet pulsed light having a wavelength of 193 nm emitted from the light source passes through the illumination optical system 1 and illuminates the reticle (mask) R.

レチクルＲには転写すべきパターンが形成されており、パターン領域全体のうちＸ方向に沿って長辺を有し且つＹ方向に沿って短辺を有する矩形状（スリット状）のパターン領域が照明される。レチクルＲを通過した光は、液浸型の投影光学系ＰＬを介して、フォトレジストが塗布されたウェハ（感光性基板）Ｗ上の露光領域に所定の縮小投影倍率でレチクルパターンを形成する。   A pattern to be transferred is formed on the reticle R, and a rectangular (slit-like) pattern region having a long side along the X direction and a short side along the Y direction is illuminated in the entire pattern region. Is done. The light that has passed through the reticle R forms a reticle pattern at a predetermined reduction projection magnification in an exposure area on a wafer (photosensitive substrate) W coated with a photoresist via an immersion type projection optical system PL.

すなわち、レチクルＲ上での矩形状の照明領域に光学的に対応するように、ウェハＷ上ではＸ方向に沿って長辺を有し且つＹ方向に沿って短辺を有する矩形状の静止露光領域（実効露光領域）にパターン像が形成される。レチクルＲはレチクルステージＲＳＴ上においてＸＹ平面に平行に保持され、レチクルステージＲＳＴにはレチクルＲをＸ方向、Ｙ方向および回転方向に微動させる機構が組み込まれている。レチクルステージＲＳＴは、レチクルレーザ干渉計（不図示）によってＸ方向、Ｙ方向および回転方向の位置がリアルタイムに計測され、且つ制御される。   That is, a rectangular still exposure having a long side along the X direction and a short side along the Y direction on the wafer W so as to optically correspond to the rectangular illumination region on the reticle R. A pattern image is formed in the area (effective exposure area). The reticle R is held parallel to the XY plane on the reticle stage RST, and a mechanism for finely moving the reticle R in the X direction, the Y direction, and the rotation direction is incorporated in the reticle stage RST. In reticle stage RST, positions in the X direction, Y direction, and rotational direction are measured and controlled in real time by a reticle laser interferometer (not shown).

ウェハＷは、ウェハホルダ（不図示）を介してＺステージ９上においてＸＹ平面に平行に固定されている。Ｚステージ９は、投影光学系ＰＬの像面と実質的に平行なＸＹ平面に沿って移動するＸＹステージ１０上に固定されており、ウェハＷのフォーカス位置（Ｚ方向の位置）および傾斜角を制御する。Ｚステージ９は、Ｚステージ９上に設けられた移動鏡１２を用いるウェハレーザ干渉計１３によってＸ方向、Ｙ方向および回転方向の位置がリアルタイムに計測され、且つ制御される。   The wafer W is fixed parallel to the XY plane on the Z stage 9 via a wafer holder (not shown). The Z stage 9 is fixed on an XY stage 10 that moves along an XY plane substantially parallel to the image plane of the projection optical system PL, and the focus position (Z direction position) and tilt angle of the wafer W are set. Control. The Z stage 9 is measured and controlled in real time by the wafer laser interferometer 13 using the moving mirror 12 provided on the Z stage 9 in the X direction, the Y direction, and the rotational direction.

また、ＸＹステージ１０は、ベース１１上に載置されており、ウェハＷのＸ方向、Ｙ方向および回転方向を制御する。一方、本実施形態の露光装置に設けられた主制御系１４は、レチクルレーザ干渉計により計測された計測値に基づいてレチクルＲのＸ方向、Ｙ方向および回転方向の位置の調整を行う。即ち、主制御系１４は、レチクルステージＲＳＴに組み込まれている機構に制御信号を送信し、レチクルステージＲＳＴを微動させることによりレチクルＲの位置調整を行う。   The XY stage 10 is placed on the base 11 and controls the X direction, Y direction, and rotation direction of the wafer W. On the other hand, the main control system 14 provided in the exposure apparatus of the present embodiment adjusts the position of the reticle R in the X direction, the Y direction, and the rotational direction based on the measurement values measured by the reticle laser interferometer. That is, the main control system 14 adjusts the position of the reticle R by transmitting a control signal to a mechanism incorporated in the reticle stage RST and finely moving the reticle stage RST.

また、主制御系１４は、オートフォーカス方式及びオートレベリング方式によりウェハＷ上の表面を投影光学系ＰＬの像面に合わせ込むため、ウェハＷのフォーカス位置（Ｚ方向の位置）および傾斜角の調整を行う。即ち、主制御系１４は、ウェハステージ駆動系１５に制御信号を送信し、ウェハステージ駆動系１５によりＺステージ９を駆動させることによりウェハＷのフォーカス位置および傾斜角の調整を行う。   The main control system 14 adjusts the focus position (position in the Z direction) and the tilt angle of the wafer W in order to adjust the surface on the wafer W to the image plane of the projection optical system PL by the auto focus method and the auto leveling method. I do. That is, the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the Z stage 9 by the wafer stage drive system 15 to adjust the focus position and tilt angle of the wafer W.

更に、主制御系１４は、ウェハレーザ干渉計１３により計測された計測値に基づいてウェハＷのＸ方向、Ｙ方向および回転方向の位置の調整を行う。即ち、主制御系１４は、ウェハステージ駆動系１５に制御信号を送信し、ウェハステージ駆動系１５によりＸＹステージ１０を駆動させることによりウェハＷのＸ方向、Ｙ方向および回転方向の位置調整を行う。   Further, the main control system 14 adjusts the position of the wafer W in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the wafer laser interferometer 13. That is, the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the XY stage 10 by the wafer stage drive system 15 to adjust the position of the wafer W in the X direction, the Y direction, and the rotation direction. .

露光時には、主制御系１４は、レチクルステージＲＳＴに組み込まれている機構に制御信号を送信すると共に、ウェハステージ駆動系１５に制御信号を送信し、投影光学系ＰＬの投影倍率に応じた速度比でレチクルステージＲＳＴおよびＸＹステージ１０を駆動させつつ、レチクルＲのパターン像をウェハＷ上の所定のショット領域内に投影露光する。その後、主制御系１４は、ウェハステージ駆動系１５に制御信号を送信し、ウェハステージ駆動系１５によりＸＹステージ１０を駆動させることによりウェハＷ上の別のショット領域を露光位置にステップ移動させる。   At the time of exposure, the main control system 14 transmits a control signal to a mechanism incorporated in the reticle stage RST and also transmits a control signal to the wafer stage drive system 15, and a speed ratio corresponding to the projection magnification of the projection optical system PL. Then, the reticle stage RST and the XY stage 10 are driven to project and expose the pattern image of the reticle R into a predetermined shot area on the wafer W. Thereafter, the main control system 14 transmits a control signal to the wafer stage drive system 15, and drives the XY stage 10 by the wafer stage drive system 15, thereby step-moving another shot area on the wafer W to the exposure position.

このように、ステップ・アンド・スキャン方式によりレチクルＲのパターン像をウェハＷ上に走査露光する動作を繰り返す。すなわち、本実施形態では、ウェハステージ駆動系１５およびウェハレーザ干渉計１３などを用いてレチクルＲおよびウェハＷの位置制御を行いながら、矩形状の静止露光領域および静止照明領域の短辺方向すなわちＹ方向に沿ってレチクルステージＲＳＴとＸＹステージ１０とを、ひいてはレチクルＲとウェハＷとを同期的に移動（走査）させることにより、ウェハＷ上には静止露光領域の長辺に等しい幅を有し且つウェハＷの走査量（移動量）に応じた長さを有する領域に対してレチクルパターンが走査露光される。   In this way, the operation of scanning and exposing the pattern image of the reticle R on the wafer W by the step-and-scan method is repeated. That is, in the present embodiment, the position of the reticle R and the wafer W is controlled using the wafer stage drive system 15 and the wafer laser interferometer 13, and the short side direction of the rectangular stationary exposure region and the stationary illumination region, that is, the Y direction. Are moved along the reticle stage RST and the XY stage 10 along with the reticle R and the wafer W in synchronization (scanning), thereby having a width equal to the long side of the static exposure region on the wafer W and A reticle pattern is scanned and exposed to an area having a length corresponding to the scanning amount (movement amount) of the wafer W.

図２は、本実施形態における境界レンズとウェハとの間の構成を模式的に示す図である。図２を参照すると、本実施形態にかかる投影光学系ＰＬでは、レチクルＲ側（物体側）の面が第２液体Ｌｍ２に接し且つウェハＷ側（像側）の面が第１液体Ｌｍ１に接する平行平面板Ｌｐが最もウェハ側に配置されている。そして、この平行平面板Ｌｐに隣接して、レチクルＲ側の面が気体に接し且つウェハＷ側の面が第２液体Ｌｍ２に接する境界レンズＬｂが配置されている。   FIG. 2 is a diagram schematically showing a configuration between the boundary lens and the wafer in the present embodiment. Referring to FIG. 2, in the projection optical system PL according to the present embodiment, the reticle R side (object side) surface is in contact with the second liquid Lm2, and the wafer W side (image side) surface is in contact with the first liquid Lm1. The plane parallel plate Lp is disposed on the most wafer side. A boundary lens Lb is disposed adjacent to the plane parallel plate Lp, with the reticle R side contacting the gas and the wafer W side contacting the second liquid Lm2.

本実施形態において、例えば１．１よりも大きい屈折率を有する第１液体Ｌｍ１および第２液体Ｌｍ２として、半導体製造工場等で容易に大量に入手できる純水（脱イオン水）、たとえばＨ+，Ｃｓ+，Ｋ+、Ｃｌ-，ＳＯ4 2-，ＰＯ4 2-を入れた水、イソプロパノール，グリセロール、ヘキサン、ヘプタン、デカンなどを用いることができる。また、境界レンズＬｂは、レチクルＲ側に凸面を向け且つウェハＷ側に平面を向けた正レンズである。境界レンズＬｂおよび平行平面板Ｌｐは、たとえば石英により形成されている。 In the present embodiment, pure water (deionized water) that can be easily obtained in large quantities at a semiconductor manufacturing plant or the like, for example, H + , as the first liquid Lm1 and the second liquid Lm2 having a refractive index greater than 1.1, for example. Water containing Cs + , K + , Cl − , SO 4 2− , PO 4 2− , isopropanol, glycerol, hexane, heptane, decane, and the like can be used. The boundary lens Lb is a positive lens having a convex surface on the reticle R side and a flat surface on the wafer W side. The boundary lens Lb and the plane parallel plate Lp are made of, for example, quartz.

投影光学系ＰＬに対してウェハＷを相対移動させつつ走査露光を行うステップ・アンド・スキャン方式の露光装置において、走査露光の開始から終了まで投影光学系ＰＬの境界レンズＬｂとウェハＷとの間の光路中に液体（Ｌｍ１，Ｌｍ２）を満たし続けるには、たとえば国際公開番号ＷＯ９９／４９５０４号公報に開示された技術や、特開平１０−３０３１１４号公報に開示された技術などを用いることができる。   In a step-and-scan type exposure apparatus that performs scanning exposure while moving the wafer W relative to the projection optical system PL, between the boundary lens Lb of the projection optical system PL and the wafer W from the start to the end of the scanning exposure. For example, the technique disclosed in International Publication No. WO99 / 49504, the technique disclosed in Japanese Patent Application Laid-Open No. 10-303114, or the like can be used to keep the liquid (Lm1, Lm2) filled in the optical path. .

国際公開番号ＷＯ９９／４９５０４号公報に開示された技術では、液体供給装置から供給管および排出ノズルを介して所定の温度に調整された液体を境界レンズＬｂとウェハＷとの間の光路を満たすように供給し、液体供給装置により回収管および流入ノズルを介してウェハＷ上から液体を回収する。一方、特開平１０−３０３１１４号公報に開示された技術では、液体を収容することができるようにウェハホルダテーブルを容器状に構成し、その内底部の中央において（液体中において）ウェハＷを真空吸着により位置決め保持する。また、投影光学系ＰＬの鏡筒先端部が液体中に達し、ひいては境界レンズＬｂのウェハ側の光学面が液体中に達するように構成する。   In the technique disclosed in International Publication No. WO99 / 49504, the liquid adjusted to a predetermined temperature from the liquid supply device via the supply pipe and the discharge nozzle is filled with the optical path between the boundary lens Lb and the wafer W. The liquid is recovered from the wafer W via the recovery pipe and the inflow nozzle by the liquid supply device. On the other hand, in the technique disclosed in Japanese Patent Application Laid-Open No. 10-303114, the wafer holder table is configured in a container shape so that the liquid can be accommodated, and the wafer W is evacuated at the center of the inner bottom (in the liquid). It is positioned and held by suction. Further, the lens barrel tip of the projection optical system PL reaches the liquid, and the optical surface on the wafer side of the boundary lens Lb reaches the liquid.

本実施形態では、図１に示すように、第１給排水機構２１を用いて、平行平面板ＬｐとウェハＷとの間の光路中において第１液体Ｌｍ１を循環させている。また、第２給排水機構２２を用いて、境界レンズＬｂと平行平面板Ｌｐとの間の光路中において第２液体Ｌｍ２を循環させている。このように、浸液としての液体を微小流量で循環させることにより、防腐、防カビ等の効果により液体の変質を防ぐことができる。   In the present embodiment, as shown in FIG. 1, the first liquid Lm1 is circulated in the optical path between the plane parallel plate Lp and the wafer W using the first water supply / drainage mechanism 21. Further, the second liquid Lm2 is circulated in the optical path between the boundary lens Lb and the plane parallel plate Lp using the second water supply / drainage mechanism 22. In this way, by circulating the liquid as the immersion liquid at a minute flow rate, it is possible to prevent the liquid from being altered by the effects of antiseptic and mildewproofing.

前述したように、露光装置では、微細なパターンを高精度に投影露光するために、投影光学系の像面における光量分布を計測し、必要に応じて光量分布を所望の状態に制御することが必要である。そこで、本実施形態の露光装置では、液浸型の投影光学系ＰＬの像面における光量分布（ひいては感光性基板としてのウェハＷの露光領域（静止露光領域）における露光光量分布）を計測するための光量計測装置を備えている。   As described above, in the exposure apparatus, in order to project and expose a fine pattern with high accuracy, the light amount distribution on the image plane of the projection optical system can be measured, and the light amount distribution can be controlled to a desired state as necessary. is necessary. Therefore, in the exposure apparatus of the present embodiment, the light amount distribution on the image plane of the immersion type projection optical system PL (and thus the exposure light amount distribution in the exposure region (stationary exposure region) of the wafer W as the photosensitive substrate) is measured. The light quantity measuring device is provided.

図３は、本実施形態の露光装置に搭載された光量計測装置の構成を概略的に示す図である。図３を参照すると、本実施形態の光量計測装置は、たとえばウェハステージ（９，１０）の内部または側方に設けられ、液浸型の投影光学系ＰＬの像面近傍に配置される光透過部材３１と、光透過部材３１を介した光を検出する光検出器３２とを備えている。光透過部材３１は、例えば石英または蛍石により形成され、その入射面が投影光学系ＰＬの像面と一致するように位置決めされる。   FIG. 3 is a view schematically showing a configuration of a light amount measuring apparatus mounted on the exposure apparatus of the present embodiment. Referring to FIG. 3, the light quantity measuring device of the present embodiment is provided inside or on the side of the wafer stage (9, 10), for example, and is disposed in the vicinity of the image plane of the immersion type projection optical system PL. A member 31 and a photodetector 32 that detects light via the light transmitting member 31 are provided. The light transmitting member 31 is formed of, for example, quartz or fluorite, and is positioned so that the incident surface thereof coincides with the image surface of the projection optical system PL.

光透過部材３１の入射面側には、光透過部材３１に入射する光を制限し、ひいては光検出器３２に入射する光を制限するためのピンホールのような開口３１ａが形成されている。開口３１ａは、たとえば光透過部材３１の入射面において開口３１ａを除く領域に遮光性の金属膜３１ａａなどを設けることにより形成されている。一方、光透過部材３１の射出面側（光検出器３２側）には、開口３１ａおよび光透過部材３１の内部を介した光をプリズム作用により集光して光検出器３２へ導くためのプリズム集光部３１ｂが設けられている。   On the incident surface side of the light transmissive member 31, an opening 31 a such as a pinhole for limiting light incident on the light transmissive member 31 and thus limiting light incident on the photodetector 32 is formed. The opening 31a is formed, for example, by providing a light-shielding metal film 31aa or the like in a region excluding the opening 31a on the incident surface of the light transmitting member 31. On the other hand, on the exit surface side (light detector 32 side) of the light transmitting member 31, a prism for condensing light through the opening 31 a and the inside of the light transmitting member 31 by the prism action and guiding it to the light detector 32. A condensing part 31b is provided.

プリズム集光部３１ｂは、光検出器３２側に頂点を向けた円錐面に対応する光学面３１ｂａと、投影光学系ＰＬの像面に平行な光学面３１ｂｂとを有する。さらに詳細には、光学面３１ｂａを規定する円錐面は、光制限手段としての開口３１ａの中心を通り且つ投影光学系ＰＬの像面と直交する回転軸３１ｂｃを有する。プリズム集光部３１ｂは、たとえば平行平面板状の光透過部材３１を削り加工することにより、光透過部材３１の本体と一体的に形成されている。   The prism condensing unit 31b has an optical surface 31ba corresponding to a conical surface whose apex is directed toward the photodetector 32, and an optical surface 31bb parallel to the image surface of the projection optical system PL. More specifically, the conical surface that defines the optical surface 31ba has a rotation axis 31bc that passes through the center of the opening 31a as the light limiting means and is orthogonal to the image surface of the projection optical system PL. The prism condensing part 31b is formed integrally with the main body of the light transmissive member 31, for example, by shaving the light transmissive member 31 having a plane parallel plate shape.

上述のように、液浸型の投影光学系ＰＬの像面における光量を計測する光量計測装置では、投影光学系ＰＬの像面と平行平面板Ｌｐとの間に介在する液体Ｌｍ１がウェハステージ（９，１０）の内部へ漏出しないように、投影光学系ＰＬの像面近傍に光透過部材３１を配置する必要がある。ただし、この光透過部材を平行平面板状に形成すると、所定の値以上の大きな入射角度で投影光学系の像面に達した光は、光透過部材の内部を伝搬するが、光検出器と光透過部材との間に介在する気体層（空気層）と光透過部材との境界面（すなわち光透過部材の射出面）で反射されるため、光検出器で検出されることがなく投影光学系の像面における光量分布を高精度に計測することができない。   As described above, in the light amount measuring apparatus that measures the light amount on the image plane of the immersion type projection optical system PL, the liquid Lm1 interposed between the image plane of the projection optical system PL and the parallel plane plate Lp is the wafer stage ( 9 and 10), it is necessary to dispose the light transmitting member 31 in the vicinity of the image plane of the projection optical system PL so as not to leak into the interior of the projection optical system PL. However, when this light transmitting member is formed in a parallel plane plate shape, light that reaches the image plane of the projection optical system at a large incident angle of a predetermined value or more propagates through the inside of the light transmitting member. Since it is reflected by the boundary surface between the gas layer (air layer) interposed between the light transmitting member and the light transmitting member (that is, the exit surface of the light transmitting member), the projection optics is not detected by the photodetector. The light quantity distribution on the image plane of the system cannot be measured with high accuracy.

一方、たとえばオプティカルコンタクト、接合、融合などの手法により集光レンズを平行平面板状の光透過部材に取り付け、大きな入射角度で投影光学系の像面に達した光を集光レンズの作用により集光して光検出器へ取り込む構成も考えられる。しかしながら、オプティカルコンタクト手法では、光透過部材への集光レンズの取り付け強度に不安がある。接合手法では、短波長光に対して充分な耐久性を有する接着剤の入手が困難である。融合手法では、光透過部材への集光レンズの確実な取り付けが困難である。   On the other hand, a condensing lens is attached to a plane-parallel plate-shaped light transmission member by a method such as optical contact, bonding, or fusion, and light that reaches the image plane of the projection optical system at a large incident angle is collected by the action of the condensing lens. A configuration in which the light is taken into the photodetector can also be considered. However, in the optical contact method, there is anxiety about the attachment strength of the condensing lens to the light transmission member. In the bonding technique, it is difficult to obtain an adhesive having sufficient durability against short wavelength light. In the fusion method, it is difficult to reliably attach the condenser lens to the light transmitting member.

本実施形態の光量計測装置では、光透過部材３１の射出面側（光検出器３２側）にプリズム集光部３１ｂが設けられているので、開口３１ａおよび光透過部材３１の内部を介した光がプリズム集光部３１ｂのプリズム作用により集光されて光検出器３２へ導かれる。その結果、所定の値以上の大きな入射角度で投影光学系ＰＬの像面に達した光も光検出器３２で検出されるので、ウェハステージ（９，１０）の駆動作用により光透過部材３１と光検出器３２とを投影光学系ＰＬの像面に沿って二次元的に移動させつつ、投影光学系ＰＬの像面における光量分布を計測することができる。   In the light quantity measuring device of the present embodiment, the prism condensing part 31b is provided on the exit surface side (light detector 32 side) of the light transmitting member 31, so that light is transmitted through the opening 31a and the inside of the light transmitting member 31. Are condensed by the prism action of the prism condensing part 31 b and guided to the photodetector 32. As a result, light reaching the image plane of the projection optical system PL at a large incident angle equal to or greater than a predetermined value is also detected by the light detector 32, so that the light transmitting member 31 and the light transmitting member 31 are driven by the driving action of the wafer stage (9, 10). The light quantity distribution on the image plane of the projection optical system PL can be measured while moving the photodetector 32 two-dimensionally along the image plane of the projection optical system PL.

特に、本実施形態の光量計測装置では、オプティカルコンタクト、接合、融合などの手法を用いることなく、たとえば平行平面板状の光透過部材３１を削り加工することにより、プリズム集光部３１ｂが光透過部材３１の本体と一体的に形成されている。その結果、光透過部材３１と平行平面板Ｌｐとの間に介在する液体Ｌｍ１のウェハステージ（９，１０）の内部への漏出を確実に防止するとともに、光透過部材３１の高い耐久性を確保することができる。   In particular, in the light quantity measuring device of the present embodiment, the prism condensing unit 31b transmits light without using a method such as optical contact, bonding, or fusion, for example, by shaving the light transmitting member 31 having a plane-parallel plate shape. It is formed integrally with the main body of the member 31. As a result, the liquid Lm1 interposed between the light transmission member 31 and the plane parallel plate Lp is surely prevented from leaking into the wafer stage (9, 10), and the light transmission member 31 has high durability. can do.

このように、本実施形態の光量計測装置では、比較的大きな入射角度で投影光学系ＰＬの像面（所定面）に達する光も確実に検出して、投影光学系ＰＬの像面における光量分布を高精度に計測することができる。また、本実施形態の露光装置では、光量計測装置を用いて、液浸型の投影光学系ＰＬの像面における光量分布（ひいてはウェハＷの露光領域（静止露光領域）における露光光量分布）を高精度に計測し、必要に応じて光量分布を所望の状態に制御（調整）して、レチクルＲの微細なパターンをウェハＷ上の露光領域へ高精度に投影露光することができる。   As described above, in the light quantity measurement device of the present embodiment, light reaching the image plane (predetermined plane) of the projection optical system PL at a relatively large incident angle is reliably detected, and the light quantity distribution on the image plane of the projection optical system PL. Can be measured with high accuracy. Further, in the exposure apparatus of the present embodiment, the light quantity measurement device is used to increase the light quantity distribution on the image plane of the immersion type projection optical system PL (and thus the exposure light quantity distribution in the exposure area (stationary exposure area) of the wafer W). It is possible to accurately measure and control (adjust) the light amount distribution to a desired state as necessary, and to project and expose a fine pattern of the reticle R onto the exposure region on the wafer W with high accuracy.

なお、上述の実施形態では、プリズム集光部３１ｂが円錐面に対応する光学面３１ｂａと投影光学系ＰＬの像面に平行な光学面３１ｂｂとにより規定される円錐台状の形態を有するが、これに限定されることなく、プリズム集光部３１ｂの形態については様々な変形例が可能である。一例として、頂点を有する円錐状の形態にプリズム集光部を構成することもできる。   In the above-described embodiment, the prism condensing unit 31b has a truncated cone shape defined by the optical surface 31ba corresponding to the conical surface and the optical surface 31bb parallel to the image surface of the projection optical system PL. Without being limited thereto, various modifications are possible for the form of the prism condensing part 31b. As an example, the prism condensing unit may be configured in a conical shape having apexes.

また、上述の実施形態では、開口３１ａの位置に対応するように１つの円錐台状の形態を有するプリズム集光部３１ｂを設けている。しかしながら、これに限定されることなく、図４に示すように、投影光学系ＰＬの像面に平行な面（すなわち光透過部材３１の入射面に平行な面）に沿って二次元的に配置された複数の円錐面を有するプリズム集光部４１ｂを用いる変形例も可能である。   In the above-described embodiment, the prism condensing part 31b having a single truncated cone shape is provided so as to correspond to the position of the opening 31a. However, the present invention is not limited to this, and as shown in FIG. 4, it is two-dimensionally arranged along a plane parallel to the image plane of the projection optical system PL (that is, a plane parallel to the incident plane of the light transmission member 31). A modification using the prism condensing part 41b having a plurality of conical surfaces is also possible.

図４の変形例にかかるプリズム集光部４１ｂは、図５（ａ）に示すように、円錐面に対応する光学面４１ｂａのみにより規定される多数の微小な円錐プリズムにより構成されている。あるいは、図４の変形例において、プリズム集光部４１ｂを、図５（ｂ）に示すように、円錐面に対応する光学面４１ｂａと投影光学系ＰＬの像面に平行な光学面４１ｂｂとにより規定される多数の微小な円錐台プリズムにより構成することもできる。   As shown in FIG. 5A, the prism condensing unit 41b according to the modification of FIG. 4 includes a large number of minute conical prisms defined only by the optical surface 41ba corresponding to the conical surface. Alternatively, in the modification of FIG. 4, the prism condensing unit 41 b includes an optical surface 41 ba corresponding to the conical surface and an optical surface 41 bb parallel to the image surface of the projection optical system PL, as shown in FIG. It can also be configured by a large number of minute truncated cone prisms.

また、図４の変形例において、二次元的に配置された複数の角錐面（四角錐面、三角錐面など）を有するプリズム集光部４１ｂを用いることもできる。すなわち、図示を省略したが、プリズム集光部４１ｂを、角錐面に対応する光学面（図５（ａ）の４１ｂａに対応）のみにより規定される多数の微小な角錐プリズムにより構成したり、角錐面に対応する光学面（図５（ｂ）の４１ｂａに対応）と投影光学系ＰＬの像面に平行な光学面（図５（ｂ）の４１ｂｂに対応）とにより規定される多数の微小な角錐台プリズムにより構成したりすることもできる。いずれにしても、プリズム集光部４１ｂは、たとえば平行平面板状の光透過部材３１を削り加工することにより、光透過部材３１の本体と一体的に形成されていることが好ましい。   In the modification of FIG. 4, it is also possible to use a prism condensing unit 41 b having a plurality of pyramidal surfaces (a quadrangular pyramid surface, a triangular pyramid surface, etc.) arranged two-dimensionally. That is, although not shown, the prism condensing unit 41b is configured by a large number of minute pyramid prisms defined only by an optical surface corresponding to the pyramid surface (corresponding to 41ba in FIG. 5A), or a pyramid. A large number of minute surfaces defined by an optical surface corresponding to the surface (corresponding to 41ba in FIG. 5B) and an optical surface parallel to the image surface of the projection optical system PL (corresponding to 41bb in FIG. 5B). It can also be constituted by a truncated pyramid prism. In any case, it is preferable that the prism condensing part 41b is formed integrally with the main body of the light transmitting member 31 by cutting the light transmitting member 31 having a plane-parallel plate shape, for example.

図４の変形例では、開口３１ａおよび光透過部材３１の内部を介した光の一部が、光検出器３２と光透過部材３１との間に介在する気体層（空気層）と光透過部材３１との境界面（すなわち光透過部材３１の射出面）で反射される。ただし、投影光学系ＰＬの像面への入射角度に依存することなく、様々な入射角度の光がほぼ一様に光透過部材３１の射出面に形成された拡散部で反射される。したがって、図４の変形例においても図３の実施形態と同様に、投影光学系ＰＬの像面における光量分布を高精度に計測することができる。   In the modification of FIG. 4, a part of the light passing through the opening 31 a and the inside of the light transmission member 31 is a gas layer (air layer) interposed between the photodetector 32 and the light transmission member 31 and the light transmission member. The light is reflected at the boundary surface with 31 (that is, the exit surface of the light transmitting member 31). However, light having various incident angles is reflected almost uniformly by the diffusion portion formed on the exit surface of the light transmitting member 31 without depending on the incident angle on the image plane of the projection optical system PL. Therefore, in the modified example of FIG. 4 as well, the light amount distribution on the image plane of the projection optical system PL can be measured with high accuracy as in the embodiment of FIG.

なお、図４の変形例では、ピンホールのような微小な開口３１ａを有する光透過部材３１と光検出器３２とを投影光学系ＰＬの像面に沿って二次元的に移動させつつ、投影光学系ＰＬの像面における光量分布を計測している。しかしながら、これに限定されることなく、図６に示すように、投影光学系ＰＬの有効結像領域（ウェハＷの静止露光領域に対応）に対応する形状の比較的大きな開口３１ａ’を光透過部材３１の入射面側に設け、投影光学系ＰＬの有効結像領域の全体に達する光の全光量（ウェハＷの静止露光領域の全体に達する露光光の全光量）を一括的に計測する変形例も可能である。   In the modification of FIG. 4, projection is performed while two-dimensionally moving the light transmission member 31 having a minute opening 31 a such as a pinhole and the photodetector 32 along the image plane of the projection optical system PL. The light quantity distribution on the image plane of the optical system PL is measured. However, the present invention is not limited to this, and as shown in FIG. 6, light is transmitted through a relatively large opening 31a ′ having a shape corresponding to the effective imaging region (corresponding to the static exposure region of the wafer W) of the projection optical system PL. A modification that is provided on the incident surface side of the member 31 and collectively measures the total amount of light reaching the entire effective imaging region of the projection optical system PL (the total amount of exposure light reaching the entire static exposure region of the wafer W). Examples are also possible.

また、図３の実施形態、図４の変形例、および図６の変形例では、光検出器３２に入射する光を制限するための光制限手段としての開口３１ａ，３１ａ’を光透過部材３１の入射面側に形成している。しかしながら、これに限定されることなく、光透過部材３１から僅かに離間した投影光学系ＰＬの像面（所定面）の位置、または投影光学系ＰＬの像面と光学的に共役な位置（具体的にはレチクルＲを設定すべき投影光学系ＰＬの物体面位置など）に光制限手段を設けることもできる。   Further, in the embodiment of FIG. 3, the modification of FIG. 4, and the modification of FIG. 6, openings 31 a and 31 a ′ serving as light restricting means for restricting light incident on the photodetector 32 are provided as light transmitting members 31. It is formed on the incident surface side. However, the present invention is not limited to this, and the position of the image plane (predetermined plane) of the projection optical system PL slightly spaced from the light transmission member 31 or the position optically conjugate with the image plane of the projection optical system PL (specifically Specifically, the light limiting means can be provided in the object plane position of the projection optical system PL where the reticle R is to be set.

また、図４の変形例では、光透過部材３１の射出面側に多数の円錐面または多数の角錐面を二次元的に形成することにより拡散部としてのプリズム集光部４１ｂを構成しているが、これに限定されることなく、光透過部材の射出面側に多数の円筒面を一方向に沿って並べて形成することにより拡散部としてのプリズム集光部を構成することもできる。   4, the prism condensing part 41b as a diffusing part is configured by two-dimensionally forming a large number of conical surfaces or a large number of pyramidal surfaces on the exit surface side of the light transmission member 31. However, the present invention is not limited to this, and a prism condensing unit as a diffusing unit can be configured by forming a large number of cylindrical surfaces side by side along one direction on the exit surface side of the light transmitting member.

上述の実施形態の露光装置では、照明装置によってレチクル（マスク）を照明し（照明工程）、投影光学系を用いてマスクに形成された転写用のパターンを感光性基板に露光する（露光工程）ことにより、マイクロデバイス（半導体素子、撮像素子、液晶表示素子、薄膜磁気ヘッド等）を製造することができる。以下、本実施形態の露光装置を用いて感光性基板としてのウェハ等に所定の回路パターンを形成することによって、マイクロデバイスとしての半導体デバイスを得る際の手法の一例につき図７のフローチャートを参照して説明する。   In the exposure apparatus of the above-described embodiment, the reticle (mask) is illuminated by the illumination device (illumination process), and the transfer pattern formed on the mask is exposed to the photosensitive substrate using the projection optical system (exposure process). Thus, a micro device (semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.) can be manufactured. Hereinafter, referring to the flowchart of FIG. 7 for an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the present embodiment. I will explain.

先ず、図７のステップ３０１において、１ロットのウェハ上に金属膜が蒸着される。次のステップ３０２において、その１ロットのウェハ上の金属膜上にフォトレジストが塗布される。その後、ステップ３０３において、本実施形態の露光装置を用いて、マスク上のパターンの像がその投影光学系を介して、その１ロットのウェハ上の各ショット領域に順次露光転写される。その後、ステップ３０４において、その１ロットのウェハ上のフォトレジストの現像が行われた後、ステップ３０５において、その１ロットのウェハ上でレジストパターンをマスクとしてエッチングを行うことによって、マスク上のパターンに対応する回路パターンが、各ウェハ上の各ショット領域に形成される。   First, in step 301 of FIG. 7, a metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on the one lot of wafers. Thereafter, in step 303, using the exposure apparatus of the present embodiment, the image of the pattern on the mask is sequentially exposed and transferred to each shot area on the wafer of one lot via the projection optical system. Thereafter, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, the resist pattern is etched on the one lot of wafers to form a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each wafer.

その後、更に上のレイヤの回路パターンの形成等を行うことによって、半導体素子等のデバイスが製造される。上述の半導体デバイス製造方法によれば、極めて微細な回路パターンを有する半導体デバイスをスループット良く得ることができる。なお、ステップ３０１〜ステップ３０５では、ウェハ上に金属を蒸着し、その金属膜上にレジストを塗布、そして露光、現像、エッチングの各工程を行っているが、これらの工程に先立って、ウェハ上にシリコンの酸化膜を形成後、そのシリコンの酸化膜上にレジストを塗布、そして露光、現像、エッチング等の各工程を行っても良いことはいうまでもない。   Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput. In steps 301 to 305, a metal is deposited on the wafer, a resist is applied on the metal film, and exposure, development, and etching processes are performed. Prior to these processes, on the wafer. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

また、本実施形態の露光装置では、プレート（ガラス基板）上に所定のパターン（回路パターン、電極パターン等）を形成することによって、マイクロデバイスとしての液晶表示素子を得ることもできる。以下、図８のフローチャートを参照して、このときの手法の一例につき説明する。図８において、パターン形成工程４０１では、本実施形態の露光装置を用いてマスクのパターンを感光性基板（レジストが塗布されたガラス基板等）に転写露光する、所謂光リソグラフィ工程が実行される。この光リソグラフィー工程によって、感光性基板上には多数の電極等を含む所定パターンが形成される。その後、露光された基板は、現像工程、エッチング工程、レジスト剥離工程等の各工程を経ることによって、基板上に所定のパターンが形成され、次のカラーフィルター形成工程４０２へ移行する。   In the exposure apparatus of this embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 8, in the pattern formation process 401, a so-called photolithography process is performed in which the exposure pattern of the present embodiment is used to transfer and expose the mask pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

次に、カラーフィルター形成工程４０２では、Ｒ（Red）、Ｇ（Green）、Ｂ（Blue）に対応した３つのドットの組がマトリックス状に多数配列されたり、またはＲ、Ｇ、Ｂの３本のストライプのフィルターの組を複数水平走査線方向に配列されたりしたカラーフィルターを形成する。そして、カラーフィルター形成工程４０２の後に、セル組み立て工程４０３が実行される。セル組み立て工程４０３では、パターン形成工程４０１にて得られた所定パターンを有する基板、およびカラーフィルター形成工程４０２にて得られたカラーフィルター等を用いて液晶パネル（液晶セル）を組み立てる。   Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter forming step 402, a cell assembly step 403 is executed. In the cell assembly step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step 401, the color filter obtained in the color filter formation step 402, and the like.

セル組み立て工程４０３では、例えば、パターン形成工程４０１にて得られた所定パターンを有する基板とカラーフィルター形成工程４０２にて得られたカラーフィルターとの間に液晶を注入して、液晶パネル（液晶セル）を製造する。その後、モジュール組み立て工程４０４にて、組み立てられた液晶パネル（液晶セル）の表示動作を行わせる電気回路、バックライト等の各部品を取り付けて液晶表示素子として完成させる。上述の液晶表示素子の製造方法によれば、極めて微細な回路パターンを有する液晶表示素子をスループット良く得ることができる。   In the cell assembly step 403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step 401 and the color filter obtained in the color filter formation step 402, and a liquid crystal panel (liquid crystal cell) is obtained. ). Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

なお、上述の実施形態では、ＡｒＦエキシマレーザ光源を用いているが、これに限定されることなく、たとえばＦ2 レーザ光源のような他の適当な光源を用いることもできる。ただし、露光光としてＦ2レーザ光を用いる場合は、液体としてはＦ2レーザ光を透過可能な例えばフッ素系オイルや過フッ化ポリエーテル（ＰＦＰＥ）等のフッ素系の液体を用いることになる。 In the above-described embodiment, the ArF excimer laser light source is used. However, the present invention is not limited to this, and other appropriate light sources such as an F 2 laser light source can also be used. However, when F 2 laser light is used as exposure light, a fluorine-based liquid such as fluorine-based oil or perfluorinated polyether (PFPE) that can transmit the F 2 laser light is used as the liquid.

また、上述の実施形態では、液浸型の投影光学系の像面における光量を計測する光量計測装置に対して本発明を適用しているが、これに限定されることなく、浸液を用いない乾燥型の投影光学系の像面における光量を計測する光量計測装置や、所定面における光量を計測する一般的な光量計測装置に対しても本発明を適用することができる。   In the above-described embodiment, the present invention is applied to the light amount measuring device that measures the light amount on the image plane of the immersion type projection optical system. However, the present invention is not limited to this, and immersion liquid is used. The present invention can also be applied to a light amount measuring device that measures the light amount on the image plane of a dry projection optical system that is not, and a general light amount measuring device that measures the light amount on a predetermined surface.

本発明の実施形態にかかる露光装置の構成を概略的に示す図である。It is a figure which shows schematically the structure of the exposure apparatus concerning embodiment of this invention. 本実施形態における境界レンズとウェハとの間の構成を模式的に示す図である。It is a figure which shows typically the structure between the boundary lens and wafer in this embodiment. 本実施形態の露光装置に搭載された光量計測装置の構成を概略的に示す図である。It is a figure which shows schematically the structure of the light quantity measuring device mounted in the exposure apparatus of this embodiment. 二次元的に配置された複数の円錐面または複数の角錐面を有するプリズム集光部を用いる変形例の構成を概略的に示す図である。It is a figure which shows schematically the structure of the modification using the prism condensing part which has the several conical surface or several pyramid surface arrange | positioned two-dimensionally. 図４の変形例にかかるプリズム集光部の構成例を概略的に示す図である。It is a figure which shows roughly the structural example of the prism condensing part concerning the modification of FIG. 図４に類似する構成において投影光学系の有効結像領域の全体に達する光の全光量を一括的に計測する変形例の構成を概略的に示す図である。FIG. 5 is a diagram schematically showing a configuration of a modification in which the total amount of light reaching the entire effective imaging region of the projection optical system is collectively measured in a configuration similar to FIG. 4. マイクロデバイスとしての半導体デバイスを得る際の手法のフローチャートである。It is a flowchart of the method at the time of obtaining the semiconductor device as a microdevice. マイクロデバイスとしての液晶表示素子を得る際の手法のフローチャートである。It is a flowchart of the method at the time of obtaining the liquid crystal display element as a microdevice.

符号の説明Explanation of symbols

Ｒ レチクル
ＲＳＴ レチクルステージ
ＰＬ 投影光学系
Ｌｂ 境界レンズ
Ｌｐ 平行平面板
Ｌｍ１，Ｌｍ２ （液体）
Ｗ ウェハ
１ 照明光学系
９ Ｚステージ
１０ ＸＹステージ
１２ 移動鏡
１３ ウェハレーザ干渉計
１４ 主制御系
１５ ウェハステージ駆動系
２１ 第１給排水機構
２２ 第２給排水機構
３１ 光透過部材
３１ａ 開口
３１ｂ プリズム集光部
３２ 光検出器 R reticle RST reticle stage PL projection optical system Lb boundary lens Lp plane parallel plates Lm1, Lm2 (liquid)
W Wafer 1 Illumination optical system 9 Z stage 10 XY stage 12 Moving mirror 13 Wafer laser interferometer 14 Main control system 15 Wafer stage drive system 21 First water supply / drainage mechanism 22 Second water supply / drainage mechanism 31 Light transmission member 31a Opening 31b Prism condensing part 32 Photodetector

Claims (10)

所定面における光量を計測する光量計測装置において、
前記所定面またはその近傍に配置された光透過部材と、
前記所定面および前記光透過部材を介した光を検出する光検出器とを備え、
前記光透過部材の光検出器側には、前記所定面および前記光透過部材を介した光をプリズム作用により集光して前記光検出器へ導くためのプリズム集光部が設けられていることを特徴とする光量計測装置。 In a light quantity measuring device that measures the light quantity on a predetermined surface,
A light transmissive member disposed on or near the predetermined surface;
A photodetector for detecting light through the predetermined surface and the light transmitting member;
A prism condensing part for condensing light through the predetermined surface and the light transmitting member by a prism action and guiding the light to the light detector is provided on the light detector side of the light transmitting member. A light quantity measuring device characterized by 前記所定面の位置、前記所定面と光学的に共役な位置、または前記光透過部材の所定面側には、前記光検出器に入射する光を制限する光制限手段が設けられていることを特徴とする請求項１に記載の光量計測装置。 Light limiting means for limiting light incident on the photodetector is provided at the position of the predetermined surface, a position optically conjugate with the predetermined surface, or the predetermined surface side of the light transmitting member. The light quantity measuring device according to claim 1, wherein 前記プリズム集光部は、前記光検出器側に頂点を向けた円錐面に対応する光学面を有することを特徴とする請求項１または２に記載の光量計測装置。 The light quantity measuring device according to claim 1, wherein the prism condensing unit has an optical surface corresponding to a conical surface whose apex is directed to the photodetector side. 前記プリズム集光部は、前記所定面に平行な光学面をさらに有することを特徴とする請求項３に記載の光量計測装置。 The light quantity measuring device according to claim 3, wherein the prism condensing unit further includes an optical surface parallel to the predetermined surface. 前記円錐面は、前記光制限手段としての開口の中心を通り且つ前記所定面と直交する回転軸を有することを特徴とする請求項３または４に記載の光量計測装置。 5. The light quantity measuring device according to claim 3, wherein the conical surface has a rotation axis that passes through a center of an opening as the light limiting unit and is orthogonal to the predetermined surface. 前記プリズム集光部は、二次元的に配置された複数の円錐面または複数の角錐面を有することを特徴とする請求項１乃至４のいずれか１項に記載の光量計測装置。 5. The light quantity measuring device according to claim 1, wherein the prism condensing unit has a plurality of conical surfaces or a plurality of pyramid surfaces arranged two-dimensionally. 前記プリズム集光部は、前記光透過部材の本体と一体的に形成されていることを特徴とする請求項１乃至６のいずれか１項に記載の光量計測装置。 The light quantity measuring device according to claim 1, wherein the prism condensing unit is formed integrally with a main body of the light transmitting member. 投影光学系を介して所定のパターンを感光性基板に露光する露光装置において、
前記感光性基板上の露光領域における光量を計測するための請求項１乃至７のいずれか１項に記載の光量計測装置を備えていることを特徴とする露光装置。 In an exposure apparatus that exposes a predetermined pattern on a photosensitive substrate via a projection optical system,
An exposure apparatus comprising the light amount measuring device according to claim 1 for measuring a light amount in an exposure region on the photosensitive substrate. 前記投影光学系と前記感光性基板との間の光路中には液体が満たされていることを特徴とする請求項８に記載の露光装置。 9. The exposure apparatus according to claim 8, wherein an optical path between the projection optical system and the photosensitive substrate is filled with a liquid. 請求項８または９に記載の露光装置を用いて、前記所定のパターンを前記感光性基板に露光する露光工程と、
前記露光工程により露光された前記感光性基板を現像する現像工程とを含むことを特徴とするデバイスの製造方法。 An exposure step of exposing the predetermined pattern to the photosensitive substrate using the exposure apparatus according to claim 8 or 9,
And a development step of developing the photosensitive substrate exposed in the exposure step.
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JPH08219712A (en) * 1995-02-15 1996-08-30 Matsushita Electric Works Ltd Optical triangulation-type displacement sensor
JP2001311874A (en) * 2000-04-28 2001-11-09 Yokogawa Electric Corp Optical scanner and tomographic image acquiring device using the same
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JP2005175034A (en) * 2003-12-09 2005-06-30 Canon Inc Aligner
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