JP2007067348A - Fixing and transporting tool for electronic component - Google Patents

Fixing and transporting tool for electronic component Download PDF

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JP2007067348A
JP2007067348A JP2005255141A JP2005255141A JP2007067348A JP 2007067348 A JP2007067348 A JP 2007067348A JP 2005255141 A JP2005255141 A JP 2005255141A JP 2005255141 A JP2005255141 A JP 2005255141A JP 2007067348 A JP2007067348 A JP 2007067348A
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holding layer
semiconductor wafer
electronic component
layer
jig
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Kiyobumi Tanaka
清文 田中
Satoshi Odajima
智 小田嶋
Noriyoshi Hosono
則義 細野
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a fixing and transporting tool for an electronic component where the electronic component can be detached easily even when the thickness of the electronic component such as a semiconductor wafer is reduced and ambient humidity is low and contamination of the electric component is suppressed. <P>SOLUTION: The tool is provided with a support substrate 1 having rigidity; and a bendable and deformable holding layer 10 adhered to the periphery 2 of the surface of the support substrate 1, and holding a thin semiconductor wafer W of a 300 mm aperture detachably. Between the surface excepting for the periphery 2 of the support substrate 1 and a holding layer 10, a division space 3 is formed. A feeding and discharging hole 4 communicated with the space 3 is bored at the substrate 1, and a plurality of protrusions 6 contacting with the holding layer 10 are formed on the surface excepting for the periphery 2 of the substrate 1. The holding layer 10 is formed of an contacting and holding layer 11 adhering the semiconductor wafer W detachably, and a charging prevention layer 12 laminated to the rear surface of the contacting and holding layer 11. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体ウェーハやフォトマスク等からなる電子部品用の固定搬送治具に関するものである。   The present invention relates to a fixed conveyance jig for electronic parts made of a semiconductor wafer, a photomask or the like.

近年、電子機器の薄型化や小型化が図られているが、この薄型化や小型化は、電子機器の部品である半導体部品、電子部品、液晶モジュール等に関しても同様に要望されている。特に半導体メモリに関しては、メモリ容量増大の観点から薄型化したチップを積層した多段構造にするため、半導体ウェーハの段階で薄くすることが要求され、最近は厚さ１００μｍ以下、場合により厚さ５０μｍ程度の半導体ウェーハが切望されてきている。このような薄い半導体ウェーハは、半導体メモリの薄型化や小型化に資することができるものの、非常に反りやすく、しかも、割れやすいので、傷付けることなく加工したり、搬送するには、専用の固定搬送治具が必要となる。   In recent years, electronic devices have been reduced in thickness and size. However, this reduction in thickness and size is also demanded for semiconductor components, electronic components, liquid crystal modules, and the like that are components of electronic devices. In particular, with respect to semiconductor memory, in order to obtain a multi-stage structure in which thinned chips are stacked from the viewpoint of increasing memory capacity, it is required to reduce the thickness at the stage of a semiconductor wafer. Recently, the thickness is 100 μm or less, and sometimes about 50 μm. Semiconductor wafers have been anxious. Although such thin semiconductor wafers can contribute to thinning and miniaturization of semiconductor memory, they are very easy to warp and break easily, so that they can be processed and transported without damaging them. A jig is required.

そこで近年、薄い半導体ウェーハの加工や搬送に適する固定搬送治具が提案されている。この種の固定搬送治具としては、図示しないが、例えば支持基材の表面に、薄い半導体ウェーハを着脱自在に保持するフィルムを貼着したタイプがあげられる（特許文献１参照）。
特開平２‐４１９０７号公報 Therefore, in recent years, a fixed conveyance jig suitable for processing and conveying a thin semiconductor wafer has been proposed. As this type of fixed conveyance jig, although not shown, for example, there is a type in which a film for detachably holding a thin semiconductor wafer is attached to the surface of a support base (see Patent Document 1).
JP-A-2-41907

しかしながら、提案されている固定搬送治具は、室内の湿度が低い場合には、フィルムに薄い半導体ウェーハが静電気により密着し、半導体ウェーハを簡単に取り外すことができないという問題がある。   However, the proposed fixed transfer jig has a problem that when the humidity in the room is low, a thin semiconductor wafer adheres to the film due to static electricity, and the semiconductor wafer cannot be easily removed.

このような問題を解消する手段としては、フィルムの表面に帯電防止剤を塗布して剥離帯電を防止したり、フィルム自体に導電性のカーボンを練りこんで抵抗値を低下させる方法が考えられるが、そうすると、フィルムから半導体ウェーハに帯電防止剤が移行して汚染を生じさせたり、カーボンパーティクルが発生して汚染の原因になるという大きな問題が新たに生じることとなる。   As a means for solving such a problem, an antistatic agent can be applied to the surface of the film to prevent peeling charging, or a conductive carbon can be kneaded into the film itself to reduce the resistance value. In this case, a new problem arises that the antistatic agent migrates from the film to the semiconductor wafer to cause contamination, or carbon particles are generated and cause contamination.

本発明は上記に鑑みなされたもので、例え半導体ウェーハ等の電子部品が薄型化され、周囲の湿度が低い場合でも、電子部品を容易に取り外すことができ、しかも、電子部品の汚染を抑制することのできる電子部品用の固定搬送治具を提供することを目的としている。   The present invention has been made in view of the above. For example, even when an electronic component such as a semiconductor wafer is thinned and the ambient humidity is low, the electronic component can be easily removed, and contamination of the electronic component is suppressed. An object of the present invention is to provide a fixed conveyance jig for electronic components.

本発明においては上記課題を解決するため、支持基材と、この支持基材の周縁部に貼り着けられて薄板状の電子部品を保持する変形可能な保持層とを備え、支持基材の周縁部以外の表面と保持層との間に区画空間を形成し、支持基材に、区画空間に連通（通し連なる）する給排孔を設けるとともに、支持基材の周縁部以外の表面に、保持層に接触する複数の支持突起を形成したものであって、
保持層は、薄板状の電子部品を着脱自在に粘着する密着保持層と、この密着保持層に積層される帯電防止層とを含んでなることを特徴としている。 In order to solve the above-described problems, the present invention includes a supporting base and a deformable holding layer that is attached to the peripheral portion of the supporting base and holds a thin plate-shaped electronic component, and has a peripheral edge of the supporting base. A partition space is formed between the surface other than the portion and the holding layer, and the support base material is provided with supply / exhaust holes that communicate with (communicate with) the partition space, and is held on the surface other than the peripheral edge portion of the support base material. A plurality of supporting protrusions in contact with the layer;
The holding layer includes an adhesion holding layer that attaches and detachably attaches a thin plate-shaped electronic component, and an antistatic layer laminated on the adhesion holding layer.

なお、密着保持層を、押出成形された熱可塑性エラストマーとすることが好ましい。   Note that the adhesion holding layer is preferably an extruded thermoplastic elastomer.

また、帯電防止層は、側鎖に化学式２で示される第四級アンモニウム塩を有する帯電防止性樹脂、有機導電ポリマー、金属酸化物、及びカーボンからなる群より選択された少なくとも一種を含有してなることが好ましい。   The antistatic layer contains at least one selected from the group consisting of an antistatic resin having a quaternary ammonium salt represented by Chemical Formula 2 in the side chain, an organic conductive polymer, a metal oxide, and carbon. It is preferable to become.

Figure 2007067348
（式中、Ｒ1、Ｒ2、Ｒ3は炭素数１〜１０のアルキル基、Ｒ4は炭素数１〜１０のアルキレン基、Ｘ-はアニオンを示す）
Figure 2007067348
 (Wherein R 1 , R 2 and R 3 are alkyl groups having 1 to 10 carbon atoms, R 4 is an alkylene group having 1 to 10 carbon atoms, and X − represents an anion)

また、保持層を、薄板状の電子部品を着脱自在に粘着する複数の密着保持層と、この複数の密着保持層間に介在される帯電防止層とから構成しても良い。   The holding layer may be composed of a plurality of adhesion holding layers that detachably attach a thin plate-shaped electronic component, and an antistatic layer interposed between the plurality of adhesion holding layers.

ここで、特許請求の範囲における支持基材や電子部品用の固定搬送治具は、平面略円形、略楕円形、矩形、多角形等に形成することができ、基板収納容器やカセット等に収納されるものでも良いし、そうでなくても良い。薄板状の電子部品には、少なくとも液晶用ガラス、石英ガラス、半導体ウェーハ（口径３００ｍｍ、４５０ｍｍタイプ等）、フォトマスク、フレキブルプリント回路板等の回路板が含まれる。   Here, the supporting base material and the fixed conveying jig for electronic parts in the claims can be formed in a substantially circular plane, a substantially elliptical shape, a rectangular shape, a polygonal shape, etc., and stored in a substrate storage container or a cassette. It may or may not be done. The thin plate-like electronic components include at least circuit boards such as glass for liquid crystal, quartz glass, semiconductor wafers (300 mm diameter, 450 mm type, etc.), photomasks, flexible printed circuit boards and the like.

給排孔は単数複数いずれでも良い。各支持突起は、円柱形、円錐台形、角柱形、角錐台形等に形成することができる。密着保持層と帯電防止層とは、単数複数を特に問うものではない。さらに、電子部品用の固定搬送治具は、工場から他の工場への輸送の際だけでなく、工場内で薄板状の電子部品を搬送する場合等にも使用することができる。   A single or a plurality of supply / discharge holes may be used. Each support protrusion can be formed in a cylindrical shape, a truncated cone shape, a prism shape, a truncated pyramid shape, or the like. The adhesion holding layer and the antistatic layer are not particularly limited. Furthermore, the fixed conveying jig for electronic parts can be used not only when transporting from a factory to another factory, but also when transporting a thin plate-shaped electronic component within the factory.

本発明によれば、例え半導体ウェーハや回路板等の電子部品が薄型化され、周囲の湿度が低い場合でも、固定搬送治具から電子部品を容易に取り外すことができるという効果がある。また、保持層から電子部品に帯電防止剤が移行したり、カーボンパーティクル等が発生するのを防ぐことができるので、電子部品の汚染を抑制することができる。   According to the present invention, an electronic component such as a semiconductor wafer or a circuit board is thinned, and there is an effect that the electronic component can be easily removed from the fixed conveyance jig even when the ambient humidity is low. Moreover, since it can prevent that an antistatic agent transfers from a holding layer to an electronic component, or a carbon particle etc. generate | occur | produce, the contamination of an electronic component can be suppressed.

また、密着保持層を、押出成形された熱可塑性エラストマーとすれば、アウトガスを減少させることができる。
さらに、帯電防止層に、側鎖に第四級アンモニウム塩を有する帯電防止性樹脂、有機導電ポリマー、金属酸化物、及びカーボンからなる群より選択された少なくとも一種を含有すれば、湿度依存性を抑制することができる。 Further, if the adhesion holding layer is an extruded thermoplastic elastomer, outgas can be reduced.
Furthermore, if the antistatic layer contains at least one selected from the group consisting of an antistatic resin having a quaternary ammonium salt in the side chain, an organic conductive polymer, a metal oxide, and carbon, the humidity dependence is improved. Can be suppressed.

以下、図面を参照して本発明の好ましい実施の形態を説明すると、本実施形態における電子部品用の固定搬送治具は、図１ないし図６に示すように、剛性を有する支持基材１と、この支持基材１の表面の周縁部２に張架されて口径３００ｍｍの薄い半導体ウェーハＷを着脱自在に保持する屈曲変形可能な保持層１０とを備え、半導体ウェーハＷ用の基板収納容器２０に複数枚が収納される。   Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. A fixed conveyance jig for an electronic component in the present embodiment includes a support substrate 1 having rigidity, as shown in FIGS. A holding layer 10 which is stretched around the peripheral edge 2 of the surface of the support base 1 and can hold a thin semiconductor wafer W having a diameter of 300 mm in a detachable manner, and includes a substrate storage container 20 for the semiconductor wafer W. Multiple sheets are stored in

固定搬送治具は、その全体の厚さが０．３〜２．５ｍｍの範囲、好ましくは０．５〜１．２ｍｍの範囲内とされる。これは、固定搬送治具の厚さが係る範囲内であれば、半導体ウェーハＷに関する補強性を十分に確保することができるし、図５や図６に示す基板収納容器２０に収納したり取り出す際、図示しない専用ロボットのフォークの挿入間隔を十分に確保することができるからである。また、固定搬送治具の軽量化を図ることもできるからである。   The fixed conveyance jig has a total thickness in the range of 0.3 to 2.5 mm, preferably in the range of 0.5 to 1.2 mm. As long as the thickness of the fixed transfer jig is within the range, sufficient reinforcement can be secured with respect to the semiconductor wafer W, and it can be stored in and taken out from the substrate storage container 20 shown in FIGS. This is because a sufficient fork insertion interval of a dedicated robot (not shown) can be secured. In addition, it is possible to reduce the weight of the fixed conveyance jig.

支持基材１は、図１ないし図３に示すように、基板収納容器２０に確実に収納することができるよう所定の材料を使用して剛性を有する薄板に形成されるとともに、半導体ウェーハＷと同じ大きさか、あるいは僅かに拡径の円板とされ、周縁部２以外の領域が浅く平坦に凹み形成される。この支持基材１の材料としては、特に限定されるものではないが、例えば支持基材１に半導体ウェーハＷが搭載された場合の撓み量を５ｍｍ以下に抑制可能なポリカーボネート、ポリプロピレン、ポリエチレン、アクリル樹脂、塩ビ等があげられる。   As shown in FIGS. 1 to 3, the support base 1 is formed into a rigid thin plate using a predetermined material so that the support base 1 can be securely stored in the substrate storage container 20. The discs have the same size or are slightly enlarged in diameter, and the region other than the peripheral portion 2 is formed as a shallow and flat recess. The material of the support substrate 1 is not particularly limited. For example, polycarbonate, polypropylene, polyethylene, acrylic that can suppress the amount of deflection when the semiconductor wafer W is mounted on the support substrate 1 to 5 mm or less. Examples thereof include resins and vinyl chloride.

支持基材１の周縁部２以外の平面円形に凹んだ表面と保持層１０との間には、空気の流通する区画空間３が形成され、支持基材１の表面部分には、区画空間３に連通する丸い給排孔４が厚さ方向に丸く穿孔される。この給排孔４には図４に示すバキューム装置５がチューブ等を介し着脱自在に接続され、このバキューム装置５が動作して区画空間３が減圧されることにより、保持層１０が変形する。   A partition space 3 through which air flows is formed between the surface of the support substrate 1 other than the peripheral edge portion 2 that is recessed in a circular plane and the holding layer 10, and a partition space 3 is formed on the surface portion of the support substrate 1. A round supply / exhaust hole 4 communicating with is rounded in the thickness direction. A vacuum device 5 shown in FIG. 4 is detachably connected to the supply / discharge hole 4 via a tube or the like. The vacuum device 5 operates to depressurize the partition space 3, whereby the holding layer 10 is deformed.

支持基材１の周縁部２以外の凹んだ表面には、保持層１０の裏面を接着支持する複数の支持突起６が成形法、サンドブラスト法、エッチング法等により所定の間隔をおいて配列形成され、各支持突起６が支持基材１の周縁部２と略同じ高さの円柱形に形成される。複数の支持突起６は０．０５ｍｍ以上の高さで揃えられるが、これは、０．０５ｍｍ未満の高さの場合には、十分な高さの区画空間３を形成することができず、保持層１０の変形に支障を来たすからである。   A plurality of support protrusions 6 for adhering and supporting the back surface of the holding layer 10 are arranged on the recessed surface other than the peripheral edge portion 2 of the support base material 1 at predetermined intervals by a molding method, a sandblast method, an etching method, or the like. Each support protrusion 6 is formed in a cylindrical shape having substantially the same height as the peripheral edge 2 of the support substrate 1. The plurality of support protrusions 6 are aligned at a height of 0.05 mm or more. However, when the height is less than 0.05 mm, the partition space 3 having a sufficiently high height cannot be formed and retained. This is because the deformation of the layer 10 is hindered.

このような複数の支持突起６に支持された保持層１０は、バキューム装置５の吸引動作で区画空間３が負圧化されることにより、複数の支持突起６の配列パターンに応じて凹凸に変形し、密着保持した半導体ウェーハＷとの間に空気流入用の隙間を生じさせ、保持した半導体ウェーハＷを取り外し可能とする。   The holding layer 10 supported by the plurality of support protrusions 6 is deformed into irregularities according to the arrangement pattern of the plurality of support protrusions 6 when the partition space 3 is made negative by the suction operation of the vacuum device 5. Then, a gap for inflow of air is formed between the semiconductor wafer W and the semiconductor wafer W held in close contact, and the held semiconductor wafer W can be removed.

保持層１０は、図４に示すように、半導体ウェーハＷを着脱自在に粘着する自己粘着性の密着保持層１１と、この密着保持層１１の裏面に積層接着して一体化される帯電防止層１２とを備えた多層構造の平面円形に形成され、支持基材１のリング形を呈した全周縁部２に接着剤や接着層により接着される。密着保持層１１は、押出成形された可撓性、柔軟性、耐熱性の熱可塑性エラストマーやシリコーンゴムからなる。具体的には、アウトガスの発生等、半導体ウェーハＷの影響を考慮してアクリルエチレン共重合樹脂系、ポリスチレン系、ポリウレタン系、ポリ塩化ビニル系等のエラストマーを用いてシート、フィルム、薄膜に成形される。   As shown in FIG. 4, the holding layer 10 includes a self-adhesive adhesion holding layer 11 that detachably adheres the semiconductor wafer W, and an antistatic layer that is laminated and adhered to the back surface of the adhesion holding layer 11. 12 and is bonded to the entire peripheral edge portion 2 of the support substrate 1 in the shape of a ring having a ring shape by an adhesive or an adhesive layer. The adhesion holding layer 11 is made of an extruded, flexible, soft, or heat-resistant thermoplastic elastomer or silicone rubber. Specifically, it is formed into sheets, films, and thin films using elastomers such as acrylic ethylene copolymer resin, polystyrene, polyurethane, and polyvinyl chloride in consideration of the effects of semiconductor wafer W, such as outgassing. The

帯電防止層１２は、側鎖に化学式３で示される第四級アンモニウム塩を有する帯電防止性樹脂、有機導電ポリマー、金属酸化物、及びカーボンからなる群より選択された少なくとも一種を含有し、複数の支持突起６の平坦な先端部に接着される。   The antistatic layer 12 contains at least one selected from the group consisting of an antistatic resin having a quaternary ammonium salt represented by Chemical Formula 3 in its side chain, an organic conductive polymer, a metal oxide, and carbon, It adheres to the flat tip of the support projection 6.

Figure 2007067348
（式中、Ｒ1、Ｒ2、Ｒ3は炭素数１〜１０のアルキル基、Ｒ4は炭素数１〜１０のアルキレン基、Ｘ-はアニオンを示す）
Figure 2007067348
 (Wherein R 1 , R 2 and R 3 are alkyl groups having 1 to 10 carbon atoms, R 4 is an alkylene group having 1 to 10 carbon atoms, and X − represents an anion)

半導体ウェーハＷは、基本的には１２インチの丸いシリコンウェーハからなり、鏡面である表面に回路が形成され、裏面が薄くバックグラインドされており、専用ロボットにより密着保持層１１に密着する。この半導体ウェーハＷの周縁部には図２に示すように、結晶方位の判別や位置合わせ用のオリフラＯやノッチが形成される。   The semiconductor wafer W is basically a 12-inch round silicon wafer, a circuit is formed on the mirror surface, the back surface is thinly back-ground, and is in close contact with the adhesion holding layer 11 by a dedicated robot. As shown in FIG. 2, an orientation flat O and a notch for discriminating crystal orientation and positioning are formed on the peripheral edge of the semiconductor wafer W.

基板収納容器２０は、図５や図６に示すように、正面の開口した容器本体２１と、この容器本体２１の正面を開閉する蓋体２５とを備えたフロントオープンボックスタイプに構成され、半導体ウェーハＷを搭載した２５枚又は２６枚の固定搬送治具を上下方向に並べて整列収納する。   As shown in FIGS. 5 and 6, the substrate storage container 20 is configured as a front open box type including a container body 21 having a front opening and a lid body 25 for opening and closing the front surface of the container body 21. Twenty-five or twenty-six fixed transfer jigs on which wafers W are mounted are aligned and stored in the vertical direction.

容器本体２１は、ポリカーボネート等の材料を使用してフロントオープンボックスに成形され、底面の前部両側と後部中央には、図示しない加工装置搭載用の位置決め具がそれぞれ配設されており、天井の中央部には、自動搬送機に把持されるロボティックフランジ２２が着脱自在に装着される。また、容器本体２１の背面壁内面には、固定搬送治具や半導体ウェーハＷの後部周縁を保持する複数のリヤリテーナ２３が上下方向に並べて装着され、左右両側壁の内面には、固定搬送治具の両側部を水平に保持する複数のティース２４が上下方向に並設される。   The container body 21 is formed into a front open box using a material such as polycarbonate, and positioning tools for mounting a processing device (not shown) are provided on the front side and the rear center of the bottom surface. A robotic flange 22 gripped by the automatic transfer machine is detachably attached to the central portion. A plurality of rear retainers 23 that hold the rear peripheral edge of the semiconductor wafer W are mounted side by side on the inner surface of the back wall of the container body 21. The inner surfaces of the left and right side walls are fixed to the fixed transport jig. A plurality of teeth 24 that horizontally hold both side portions are arranged in the vertical direction.

蓋体２５は、容器本体２１の開口した正面にエンドレスのシールガスケットを介して嵌合する略矩形の筐体２６と、この筐体２６の開口した正面を被覆する略矩形のカバー２７とを備えて構成される。筐体２６とカバー２７との間には、容器本体２１に嵌合した蓋体２５を施錠、解錠する施錠機構が内蔵され、筐体２６の背面には、半導体ウェーハＷの前部周縁を弾発的に保持する複数のフロントリテーナ２８が上下方向に並べて装着される。   The lid body 25 is provided with a substantially rectangular casing 26 that is fitted to the front surface of the container body 21 through an endless seal gasket and a substantially rectangular cover 27 that covers the front surface of the casing 26 that is open. Configured. A locking mechanism for locking and unlocking the lid body 25 fitted to the container main body 21 is built in between the housing 26 and the cover 27, and the front peripheral edge of the semiconductor wafer W is provided on the back surface of the housing 26. A plurality of front retainers 28 that hold elastically are mounted side by side in the vertical direction.

施錠機構は、加工装置により蓋体２５の外部から回転操作される左右一対の回転プレートと、各回転プレートの回転に伴い蓋体２５の内部上下方向に進退動する複数の進退動プレートと、各進退動プレートの先端部に取り付けられ、筐体２６の周壁の貫通孔から出没して容器本体２１の正面内周部の係止穴に干渉する複数の係止爪とから構成される。   The locking mechanism includes a pair of left and right rotating plates that are rotated from the outside of the lid 25 by a processing device, a plurality of advancing and retracting plates that move forward and backward in the vertical direction inside the lid 25 as each rotating plate rotates, A plurality of locking claws that are attached to the distal end portion of the advancing / retracting plate and that protrude from the through hole in the peripheral wall of the housing 26 and interfere with the locking holes in the front inner peripheral portion of the container body 21.

上記において、薄い半導体ウェーハＷを工場から他の工場に輸送する場合には、先ず、固定搬送治具の保持層１０の表面に半導体ウェーハＷを専用ロボットにより圧下して隙間なく密着保持させ、この固定搬送治具を基板収納容器２０の容器本体２１に専用ロボットを介して収納し、この容器本体２１に蓋体２５を嵌合し、その後、蓋体２５の施錠機構を施錠操作すれば、薄い半導体ウェーハＷを工場から他の工場に輸送することができる。   In the above, when a thin semiconductor wafer W is transported from one factory to another factory, first, the semiconductor wafer W is pressed down by a dedicated robot on the surface of the holding layer 10 of the fixed transfer jig and closely held without any gaps. The fixed conveyance jig is stored in the container main body 21 of the substrate storage container 20 via a dedicated robot, and the lid body 25 is fitted to the container main body 21, and then the locking mechanism of the lid body 25 is locked. The semiconductor wafer W can be transported from the factory to another factory.

また、輸送された半導体ウェーハＷを取り出してボンディングや各種の加工を施したい場合には、先ず、蓋体２５の施錠機構を解錠操作して容器本体２１から蓋体２５を取り外し、固定搬送治具を基板収納容器２０の容器本体２１から専用ロボットにより取り出した後、固定搬送治具の給排孔４にバキューム装置５を接続して吸引動作させれば、固定搬送治具の凸凹に変形した保持層１０から半導体ウェーハＷを専用ロボットにより簡単に吸着して取り外すことができる。   When the transported semiconductor wafer W is to be taken out and subjected to bonding or various processing, first, the locking mechanism of the lid 25 is unlocked to remove the lid 25 from the container body 21, and the fixed conveyance treatment is performed. After the tool is taken out from the container body 21 of the substrate storage container 20 by a dedicated robot, if the vacuum device 5 is connected to the supply / exhaust hole 4 of the fixed transfer jig and the suction operation is performed, the irregularity of the fixed transfer jig is deformed. The semiconductor wafer W can be easily sucked and removed from the holding layer 10 by a dedicated robot.

上記構成によれば、保持層１０を密着保持層１１と半導体ウェーハＷの剥離帯電を抑制防止する帯電防止層１２とから形成するので、例え湿度の低い室内で厚さ１００μｍ以下の薄い半導体ウェーハＷを取り扱う場合でも、保持層１０から薄い半導体ウェーハＷをきわめて簡単に取り外すことができ、しかも、静電気に伴う塵埃の付着や半導体ウェーハＷの回路破壊を有効に防止することができる。   According to the above configuration, since the holding layer 10 is formed from the adhesion holding layer 11 and the antistatic layer 12 that suppresses and prevents the peeling charge of the semiconductor wafer W, the thin semiconductor wafer W having a thickness of 100 μm or less in a room with low humidity, for example. Even when handling the semiconductor wafer W, it is possible to remove the thin semiconductor wafer W from the holding layer 10 very easily, and it is possible to effectively prevent adhesion of dust due to static electricity and circuit destruction of the semiconductor wafer W.

また、密着保持層１１の表面ではなく、半導体ウェーハＷの保持に無関係の裏面に帯電防止層１２を積層するので、保持層１０から半導体ウェーハＷに帯電防止剤が移行して汚染を生じさせたり、カーボンパーティクルが発生して汚染の原因になることがない。さらに、帯電防止層１２に、帯電防止性樹脂、有機導電ポリマー、金属酸化物、及びカーボンからなる群より選択された少なくとも一種を含有するので、湿度による悪影響が少なく、湿度依存性を著しく抑制することができる。   In addition, since the antistatic layer 12 is laminated not on the surface of the adhesion holding layer 11 but on the back surface irrelevant to the holding of the semiconductor wafer W, the antistatic agent migrates from the holding layer 10 to the semiconductor wafer W to cause contamination. Carbon particles are not generated and cause contamination. Furthermore, since the antistatic layer 12 contains at least one selected from the group consisting of an antistatic resin, an organic conductive polymer, a metal oxide, and carbon, there is little adverse effect due to humidity and the humidity dependency is remarkably suppressed. be able to.

次に、図７は本発明の第２の実施形態を示すもので、この場合には、保持層１０を、上下一対の密着保持層１１と、この一対の密着保持層１１間に挟んで介在接着される帯電防止層１２とから多層構造に形成するようにしている。その他の部分については、上記実施形態と同様であるので説明を省略する。
本実施形態においても上記実施形態と同様の作用効果が期待でき、しかも、保持層１０の構成の多様化を図ることができるのは明らかである。 Next, FIG. 7 shows a second embodiment of the present invention. In this case, the holding layer 10 is interposed between a pair of upper and lower adhesion holding layers 11 and the pair of adhesion holding layers 11. The antistatic layer 12 to be bonded is formed in a multilayer structure. The other parts are the same as those in the above embodiment, and the description thereof is omitted.
In the present embodiment, it is obvious that the same operational effects as those of the above-described embodiment can be expected, and the configuration of the holding layer 10 can be diversified.

なお、上記実施形態では支持基材１の表面周縁部２に保持層１０を接着剤により接着したが、何らこれに限定されるものではなく、保持層１０を熱融着により接着しても良い。また、汚染の問題が生じなければ、密着保持層１１に、補強性フィラーや疎水性シリカ等を必要に応じて添加しても良い。   In the above embodiment, the holding layer 10 is bonded to the surface peripheral edge portion 2 of the support base material 1 with an adhesive. However, the present invention is not limited to this, and the holding layer 10 may be bonded by heat fusion. . If no problem of contamination occurs, a reinforcing filler, hydrophobic silica, or the like may be added to the adhesion holding layer 11 as necessary.

以下、本発明に係る電子部品用の固定搬送治具の実施例を比較例と共に説明する。
実施例１
図４に示す構造の固定搬送治具を製造し、この固定搬送治具の保持層に口径３００ｍｍの薄い半導体ウェーハを押圧して隙間なく密着保持させ、搬送した後、固定搬送治具の凸凹に変形した保持層から半導体ウェーハを取り外した。この取り外しの際、静電気は発生せず、半導体ウェーハの回路も損傷しなかった。 Hereinafter, an example of a fixed conveyance jig for electronic parts concerning the present invention is described with a comparative example.
Example 1
A fixed conveyance jig having the structure shown in FIG. 4 is manufactured, and a thin semiconductor wafer having a diameter of 300 mm is pressed and held tightly on the holding layer of the fixed conveyance jig without any gaps. The semiconductor wafer was removed from the deformed holding layer. During this removal, static electricity was not generated and the circuit of the semiconductor wafer was not damaged.

実施例２
図７に示す構造の固定搬送治具を製造し、この固定搬送治具の保持層に口径３００ｍｍの薄い半導体ウェーハを押圧して隙間なく密着保持させ、搬送した後、固定搬送治具の変形した保持層から半導体ウェーハを取り外した。この取り外しの際、静電気は発生せず、半導体ウェーハの回路も損傷しなかった。 Example 2
A fixed transport jig having the structure shown in FIG. 7 is manufactured, and a thin semiconductor wafer having a diameter of 300 mm is pressed and held tightly on the holding layer of the fixed transport jig, and transported, and then the fixed transport jig is deformed. The semiconductor wafer was removed from the holding layer. During this removal, static electricity was not generated and the circuit of the semiconductor wafer was not damaged.

比較例
実施例１に示す固定搬送治具の保持層から帯電防止層を省略し、この固定搬送治具の保持層に口径３００ｍｍの薄い半導体ウェーハを押圧して隙間なく密着保持させ、搬送後、固定搬送治具の凸凹に変形した保持層から半導体ウェーハを取り外した。この際、静電気が発生し、半導体ウェーハの回路がショートして損傷した。 Comparative Example The antistatic layer was omitted from the holding layer of the fixed transfer jig shown in Example 1, and a thin semiconductor wafer having a diameter of 300 mm was pressed and held tightly on the holding layer of this fixed transfer jig without gaps. The semiconductor wafer was removed from the holding layer deformed into irregularities of the fixed conveyance jig. At this time, static electricity was generated, and the semiconductor wafer circuit was short-circuited and damaged.

本発明に係る電子部品用の固定搬送治具の実施形態を示す平面説明図である。It is a plane explanatory view showing an embodiment of a fixed conveyance jig for electronic parts concerning the present invention. 本発明に係る電子部品用の固定搬送治具の実施形態における半導体ウェーハ保持時の状態を示す平面説明図である。It is a plane explanatory view showing the state at the time of semiconductor wafer holding in the embodiment of the fixed conveyance jig for electronic parts concerning the present invention. 本発明に係る電子部品用の固定搬送治具の実施形態における支持基材を示す断面説明図である。It is a section explanatory view showing the support base material in the embodiment of the fixed conveyance jig for electronic parts concerning the present invention. 本発明に係る電子部品用の固定搬送治具の実施形態を示す要部断面説明図である。It is principal part cross-section explanatory drawing which shows embodiment of the fixed conveyance jig for electronic components which concerns on this invention. 本発明に係る電子部品用の固定搬送治具の実施形態における基板収納容器を示す斜視説明図である。It is a perspective explanatory view showing a substrate storage container in an embodiment of a fixed conveyance jig for electronic parts concerning the present invention. 本発明に係る電子部品用の固定搬送治具の実施形態における基板収納容器を示す断面説明図である。It is a section explanatory view showing a substrate storage container in an embodiment of a fixed conveyance jig for electronic parts concerning the present invention. 本発明に係る電子部品用の固定搬送治具の第２の実施形態を示す要部断面説明図である。It is principal part cross-section explanatory drawing which shows 2nd Embodiment of the fixed conveyance jig for electronic components which concerns on this invention.

符号の説明Explanation of symbols

１ 支持基材
２ 周縁部
３ 区画空間
４ 給排孔
５ バキューム装置
６ 支持突起
１０ 保持層
１１ 密着保持層
１２ 帯電防止層
２０ 基板収納容器
Ｗ 半導体ウェーハ（薄板状の電子部品） DESCRIPTION OF SYMBOLS 1 Support base material 2 Peripheral part 3 Compartment space 4 Supply / exhaust hole 5 Vacuum device 6 Support protrusion 10 Holding layer 11 Adhesion holding layer 12 Antistatic layer 20 Substrate storage container W Semiconductor wafer (thin plate-shaped electronic component)

Claims (3)

支持基材と、この支持基材の周縁部に貼り着けられて薄板状の電子部品を保持する変形可能な保持層とを備え、支持基材の周縁部以外の表面と保持層との間に区画空間を形成し、支持基材に、区画空間に連通する給排孔を設けるとともに、支持基材の周縁部以外の表面に、保持層に接触する複数の支持突起を形成した電子部品用の固定搬送治具であって、
保持層は、薄板状の電子部品を着脱自在に粘着する密着保持層と、この密着保持層に積層される帯電防止層とを含んでなることを特徴とする電子部品用の固定搬送治具。 A supporting base and a deformable holding layer that is attached to the peripheral edge of the supporting base and holds a thin plate-like electronic component, and is provided between the surface other than the peripheral edge of the supporting base and the holding layer. For electronic components in which a partition space is formed, a supply / exhaust hole communicating with the partition space is provided in the support base material, and a plurality of support protrusions that contact the holding layer are formed on the surface other than the peripheral portion of the support base material A fixed conveying jig,
The holding layer includes an adhesion holding layer that detachably adheres a thin plate-like electronic component, and an antistatic layer laminated on the adhesion holding layer. 密着保持層を、押出成形された熱可塑性エラストマーとした請求項１記載の電子部品用の固定搬送治具。   The fixed conveyance jig for electronic components according to claim 1, wherein the adhesion holding layer is an extruded thermoplastic elastomer. 帯電防止層は、側鎖に化学式１で示される第四級アンモニウム塩を有する帯電防止性樹脂、有機導電ポリマー、金属酸化物、及びカーボンからなる群より選択された少なくとも一種を含有してなる請求項１又は２記載の電子部品用の固定搬送治具。
Figure 2007067348
 （式中、Ｒ1、Ｒ2、Ｒ3は炭素数１〜１０のアルキル基、Ｒ4は炭素数１〜１０のアルキレン基、Ｘ-はアニオンを示す） The antistatic layer contains at least one selected from the group consisting of an antistatic resin having a quaternary ammonium salt represented by Chemical Formula 1 in its side chain, an organic conductive polymer, a metal oxide, and carbon. Item 3. A fixed conveying jig for electronic parts according to Item 1 or 2.
Figure 2007067348
 (Wherein R 1 , R 2 and R 3 are alkyl groups having 1 to 10 carbon atoms, R 4 is an alkylene group having 1 to 10 carbon atoms, and X − represents an anion)
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009130915A1 (en) 2008-04-25 2009-10-29 株式会社日本触媒 Water-absorbable polyacrylic acid (salt) resin and process for production thereof
JP2012256666A (en) * 2011-06-08 2012-12-27 Shin Etsu Polymer Co Ltd Wafer holding jig
US10825710B2 (en) 2017-09-21 2020-11-03 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009130915A1 (en) 2008-04-25 2009-10-29 株式会社日本触媒 Water-absorbable polyacrylic acid (salt) resin and process for production thereof
JP2012256666A (en) * 2011-06-08 2012-12-27 Shin Etsu Polymer Co Ltd Wafer holding jig
US10825710B2 (en) 2017-09-21 2020-11-03 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
US11631608B2 (en) 2017-09-21 2023-04-18 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
US11908727B2 (en) 2017-09-21 2024-02-20 Samsung Electronics Co., Ltd. Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same

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