JP2007059866A - Cleaning device and cleaning method - Google Patents

Cleaning device and cleaning method Download PDF

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JP2007059866A
JP2007059866A JP2006078386A JP2006078386A JP2007059866A JP 2007059866 A JP2007059866 A JP 2007059866A JP 2006078386 A JP2006078386 A JP 2006078386A JP 2006078386 A JP2006078386 A JP 2006078386A JP 2007059866 A JP2007059866 A JP 2007059866A
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cleaning
tank
wafer
cleaning tank
processed
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JP4255478B2 (en
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Akira Sawaki
晃 澤木
Michihisa Kono
通久 河野
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Kaijo Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To allow the surface and the backside of a wafer to be cleaned or rinsed at the same time, and to surely prevent transfer contamination on the surface by the fluid that has cleaned or rinsed the backside. <P>SOLUTION: A cleaning device 11 cleans or rinses a wafer 1 arranged in a cleaning chamber using a cleaning fluid in the cleaning chamber 23. It comprises a front wall 28 which abuts on a device body 29 to constitute the cleaning chamber, with an opening 30 corresponding to the profile of the wafer formed, a wafer holder 24 that holds the backside 3 of the wafer conveyed into the inside of the front wall from the outside thereof through the opening, keeping the wafer upright, and a pin 71 that is provided around the opening on the inside of the front wall, allowing the backside of the wafer to be brought into contact with the pin, to form an annular gap 72 between the wafer and the periphery of the opening. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、洗浄槽内で被処理物を洗浄する洗浄装置及び洗浄方法に係り、特にウエハなどの半導体基板の表面及び／又は裏面を一枚ずつ同時に洗浄する洗浄装置及び洗浄方法に関する。   The present invention relates to a cleaning apparatus and a cleaning method for cleaning an object to be processed in a cleaning tank, and more particularly to a cleaning apparatus and a cleaning method for simultaneously cleaning a front surface and / or a back surface of a semiconductor substrate such as a wafer one by one.

半導体製造工程において、ウエハなどの半導体基板を一枚ずつ洗浄し、リンスし、乾燥する洗浄装置は、特許文献１に記載されるようにスピン方式が一般的である。このような洗浄装置１００は、図２４に示すように、円筒形状のチャンバ１０２内に、チャック等を用いてウエハ１０１の端面等を保持するウエハ受け台１０３を備え、このウエハ受け台１０３が回転軸１０４を介して支持される。この回転軸１０４は、モータ（不図示）に接続され、モータの駆動により、ウエハ受け台１０３に保持されたウエハ１０１が回転可能に設けられる。   In a semiconductor manufacturing process, a cleaning system that cleans, rinses, and dries semiconductor substrates such as wafers one by one is generally a spin method as described in Patent Document 1. As shown in FIG. 24, such a cleaning apparatus 100 includes a wafer receiving table 103 that holds an end surface of the wafer 101 using a chuck or the like in a cylindrical chamber 102, and the wafer receiving table 103 rotates. It is supported via the shaft 104. The rotating shaft 104 is connected to a motor (not shown), and the wafer 101 held on the wafer receiving base 103 is rotatably provided by driving the motor.

ウエハ受け台1０３の上方には、供給ノズル１０５が備えられ、この供給ノズル１０５から有機溶剤などの洗浄液、リンス用の純水、窒素ガスなどの乾燥用流体がウエハ受け台１０３上のウエハ１０１へ順次供給されて、このウエハ１０１が洗浄され、リンスされ、乾燥される。この供給ノズル１０５の基部には温度センサ１０６が設けられて、この供給ノズル１０５へ導かれる洗浄液、純水、乾燥用流体の温度が測定される。尚、図２４中の符号１０７は排液口であり、符号１０８は排気口を示す。   A supply nozzle 105 is provided above the wafer cradle 103, and a cleaning fluid such as an organic solvent, rinsing pure water, and a drying fluid such as nitrogen gas are supplied from the supply nozzle 105 to the wafer 101 on the wafer cradle 103. Sequentially supplied, the wafer 101 is cleaned, rinsed and dried. A temperature sensor 106 is provided at the base of the supply nozzle 105, and the temperature of the cleaning liquid, pure water, and drying fluid guided to the supply nozzle 105 is measured. In FIG. 24, reference numeral 107 denotes a drainage port, and reference numeral 108 denotes an exhaust port.

また、洗浄装置には、特許文献２に記載されるように、洗浄槽内に洗浄液を満たし、この洗浄液に一枚のウエハを投入し、超音波振動を利用して、ウエハの表面及び裏面を同時に洗浄するディップ方式の洗浄装置が提案されている。   In addition, as described in Patent Document 2, the cleaning apparatus is filled with a cleaning liquid in a cleaning tank, a single wafer is put into the cleaning liquid, and the front and back surfaces of the wafer are removed using ultrasonic vibration. A dip-type cleaning device for cleaning at the same time has been proposed.

特開２０００‐２１８４０号公報Japanese Patent Laid-Open No. 2000-21840 特開平５‐１３３９７号公報JP-A-5-13397

ところが、図２４に示すスピン方式の洗浄装置１００では、洗浄時にウエハ１０１の表面１０１Ａへ注がれた洗浄液がウエハ１０１の裏面１０１Ｂ側へ回り込むことが有るとともに、ウエハ受け台１０３のチャック等によりウエハ１０１の端面等を保持するため、チャック等が接する端面等を洗浄することが困難である。   However, in the spin-type cleaning apparatus 100 shown in FIG. 24, the cleaning liquid poured onto the front surface 101A of the wafer 101 during the cleaning may go around to the back surface 101B side of the wafer 101, and the wafer may be moved by the chuck of the wafer cradle 103. Since the end surface of 101 is held, it is difficult to clean the end surface that the chuck contacts.

また、上記洗浄装置１００では、ウエハ１０１が水平状態に設置されているため、洗浄装置１００の全体の据付スペースが増大してしまう。更に、洗浄装置１００が、回転機構部としてのウエハ受け台１０３及び回転軸１０４を備えることから、部品点数が増大すると共に、これらの回転機構部の調整に多大な時間と手間を要する。   Further, in the cleaning apparatus 100, since the wafer 101 is installed in a horizontal state, the entire installation space of the cleaning apparatus 100 increases. Furthermore, since the cleaning apparatus 100 includes the wafer cradle 103 and the rotation shaft 104 as the rotation mechanism unit, the number of parts increases, and adjustment of these rotation mechanism units requires a lot of time and labor.

また、上記洗浄装置１００では、回転するウエハ１０１へ供給ノズル１０５から洗浄液などが供給されるので、ウエハ１０１の表面１０１Ａへ均一に洗浄液等を供給することが難しく、更に、洗浄液などの温度管理も困難となる。   Further, in the cleaning apparatus 100, since the cleaning liquid or the like is supplied from the supply nozzle 105 to the rotating wafer 101, it is difficult to uniformly supply the cleaning liquid or the like to the surface 101A of the wafer 101, and temperature management of the cleaning liquid or the like is also performed. It becomes difficult.

更に、上記洗浄装置１００では、ウエハ１０１がウエハ受け台１０３によって回転するので、この回転時に生ずる気流（乱流など）の作用で、チャンバ１０２内、またはこのチャンバ１０２に設置されたカップ１０９内における不要なガスの排気を適切に実施することが困難となる。   Further, in the cleaning apparatus 100, since the wafer 101 is rotated by the wafer pedestal 103, the air flow (turbulent flow or the like) generated during the rotation causes the inside of the chamber 102 or the cup 109 installed in the chamber 102. It becomes difficult to appropriately exhaust unnecessary gas.

また、ディップ方式の洗浄装置の場合には、洗浄槽に洗浄液を入れ、その中にウエハを投入して洗浄するため、ウエハの表面が裏面の汚れによって汚染される転写汚染が発生する恐れがある。   Further, in the case of a dip type cleaning apparatus, since cleaning liquid is put in a cleaning tank and a wafer is put into the cleaning tank for cleaning, there is a risk of transfer contamination in which the front surface of the wafer is contaminated by dirt on the back surface. .

本発明の目的は、上述の事情を考慮してなされたものであり、被処理物の表面及び／又は裏面を同時に洗浄またはリンスできると共に、裏面を洗浄またはリンスした洗浄用流体による表面の転写汚染を確実に防止できる洗浄装置及び洗浄方法を提供することにある。   The object of the present invention has been made in consideration of the above-mentioned circumstances, and can transfer or rinse the surface and / or the back surface of an object to be processed at the same time, and transfer contamination of the surface by a cleaning fluid that cleans or rinses the back surface. It is an object of the present invention to provide a cleaning device and a cleaning method that can reliably prevent the above.

請求項１に記載の発明に係る洗浄装置は、洗浄槽内の洗浄用流体により、当該洗浄槽に配設された被処理物を洗浄またはリンスする洗浄装置であって、装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、この一側壁の外側から上記開口を通して、上記一側壁の内側に搬入された上記被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とする保持手段と、上記一側壁の内面における上記開口周囲に設けられ、上記被処理物の裏面が接触することで、この被処理物と上記開口周囲との間に隙間を形成する隙間形成部材と、を有することを特徴とするものである。   The cleaning device according to the first aspect of the present invention is a cleaning device that cleans or rinses an object to be processed disposed in the cleaning tank with a cleaning fluid in the cleaning tank, and is in contact with the apparatus housing. A side wall in which the cleaning tank is configured and an opening corresponding to the outer shape of the object to be processed is formed, and the object to be processed carried into the inside of the one side wall through the opening from the outside of the one side wall. A holding means for allowing the workpiece to stand upright in a vertical direction and a periphery of the opening on the inner surface of the one side wall, the back surface of the workpiece being in contact with each other. And a gap forming member that forms a gap between the object and the periphery of the opening.

請求項２に記載の発明に係る洗浄装置は、請求項１に記載の発明において、上記一側壁の開口周囲と、縦方向に起立して配設された被処理物との間の隙間が、上方部分が下方部分よりも広く設定されたことを特徴とするものである。   A cleaning apparatus according to a second aspect of the present invention is the cleaning apparatus according to the first aspect, wherein a gap between the periphery of the opening of the one side wall and the workpiece disposed upright in the vertical direction is The upper portion is set wider than the lower portion.

請求項３に記載の発明に係る洗浄装置は、請求項1または２に記載の発明において、上記洗浄装置には、被処理物に対向すると共に平行して、超音波振動装置が配置されたことを特徴とするものである。   A cleaning device according to a third aspect of the invention is the cleaning device according to the first or second aspect, wherein an ultrasonic vibration device is disposed in the cleaning device so as to face and be parallel to the object to be processed. It is characterized by.

請求項４に記載の発明に係る洗浄装置は、請求項1乃至３のいずれかに記載の発明において、上記一側壁が、装置躯体に対し開口の軸方向に移動可能に構成され、この一側壁の上記装置躯体からの離反時に被処理物が搬入されて保持手段により保持され、上記一側壁と上記装置躯体との当接により洗浄槽が構成されることを特徴とするものである。   A cleaning apparatus according to a fourth aspect of the present invention is the cleaning apparatus according to any one of the first to third aspects, wherein the one side wall is configured to be movable in the axial direction of the opening with respect to the apparatus housing. When the workpiece is separated from the apparatus housing, the object to be processed is carried in and held by the holding means, and the cleaning tank is configured by contact between the one side wall and the apparatus housing.

請求項５に記載の発明に係る洗浄装置は、請求項１乃至４のいずれかに記載の発明において、上記保持手段が、旋回流により発生する負圧の作用で、被処理物の裏面を非接触状態で保持することを特徴とするものである。   A cleaning apparatus according to a fifth aspect of the present invention is the cleaning apparatus according to any one of the first to fourth aspects, wherein the holding means is configured to remove the back surface of the object to be processed by the action of the negative pressure generated by the swirling flow. It is characterized by being held in contact.

請求項６に記載の発明に係る洗浄装置は、請求項５に記載の発明において、上記保持手段が、一側壁に対し開口の軸方向に相対移動可能に当該一側壁に設置され、洗浄槽内に洗浄用流体が供給されたときに被処理物から退避して、この被処理物の保持を解除するよう構成されたことを特徴とするものである。   A cleaning apparatus according to a sixth aspect of the present invention is the cleaning apparatus according to the fifth aspect, wherein the holding means is installed on the one side wall so as to be relatively movable in the axial direction of the opening with respect to the one side wall. When the cleaning fluid is supplied to the container, it is retracted from the object to be processed and the holding of the object to be processed is released.

請求項７に記載の発明に係る洗浄装置は、請求項１乃至６のいずれかに記載の発明において、上記一側壁には、内面における開口周囲の下部に受け部材が設置され、この受け部材が、被処理物を点接触状態で支持することを特徴とするものである。   A cleaning device according to a seventh aspect of the present invention is the cleaning apparatus according to any one of the first to sixth aspects, wherein a receiving member is installed in the lower part of the inner surface around the opening, and the receiving member is The object to be processed is supported in a point contact state.

請求項８に記載の発明に係る洗浄装置は、請求項１乃至７のいずれかに記載の発明において、上記洗浄槽内へは、この洗浄槽の外部に設置されたフィルタによりろ過された洗浄用流体が循環して供給されることを特徴とするものである。   A cleaning apparatus according to an eighth aspect of the present invention is the cleaning apparatus according to any one of the first to seventh aspects, wherein the cleaning tank is filtered by a filter installed outside the cleaning tank. The fluid is circulated and supplied.

請求項９に記載の発明に係る洗浄装置は、請求項１乃至８のいずれかに記載の発明において、上記洗浄槽には、乾燥用流体を洗浄槽内へ導く乾燥用流体供給槽が連設されたことを特徴とするものである。   According to a ninth aspect of the present invention, in the cleaning apparatus according to any one of the first to eighth aspects of the present invention, a drying fluid supply tank that guides the drying fluid into the cleaning tank is connected to the cleaning tank. It is characterized by that.

請求項１０に記載の発明に係る洗浄装置は、請求項９に記載の発明において、上記乾燥用流体供給槽が、高温の有機溶剤及び不活性ガスが供給される２流体ノズルを備え、上記有機溶剤及び不活性ガスの温度は、上記２流体ノズルからの流体の噴射と同時に上記流体が気化し得る温度であることを特徴とするものである。   A cleaning apparatus according to a tenth aspect of the present invention is the cleaning apparatus according to the ninth aspect, wherein the drying fluid supply tank includes a two-fluid nozzle to which a high-temperature organic solvent and an inert gas are supplied. The temperature of the solvent and the inert gas is a temperature at which the fluid can be vaporized simultaneously with the ejection of the fluid from the two-fluid nozzle.

請求項１１に記載の発明に係る洗浄装置は、請求項１０に記載の発明において、上記有機溶剤が、２流体ノズルに接続されるパイプに巻き付けられた面状発熱体によって加熱されることを特徴とするものである。   The cleaning apparatus according to an eleventh aspect of the present invention is the cleaning apparatus according to the tenth aspect, wherein the organic solvent is heated by a planar heating element wound around a pipe connected to a two-fluid nozzle. It is what.

請求項１２に記載の発明に係る洗浄装置は、請求項９に記載の発明において、上記乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とするものである。   A cleaning apparatus according to a twelfth aspect of the present invention is the cleaning apparatus according to the ninth aspect, wherein the drying fluid is firstly vaporized with an organic solvent and then heated with an inert gas. To do.

請求項１３に記載の発明に係る洗浄方法は、被処理物を洗浄槽内に搬入し、この被処理物の表面を上記洗浄槽内に、裏面を上記洗浄槽外にそれぞれ臨ませ、当該被処理物と上記洗浄槽との間に隙間を設けて、この被処理物を上記洗浄槽に装着する被処理物搬入工程と、上記洗浄槽内で洗浄用流体を流動させ、この洗浄用流体に接液する上記被処理物の上記表面を、当該洗浄用流体により洗浄またはリンスすると共に、上記洗浄槽内の洗浄用流体の圧力の作用で上記隙間から流出する洗浄用流体によって、上記被処理物の裏面を洗浄またはリンスする洗浄・リンス工程と、を有することを特徴とするものである。   According to a thirteenth aspect of the present invention, there is provided a cleaning method for carrying an object to be processed into a cleaning tank, with the surface of the object to be processed facing the cleaning tank and the back surface facing the outside of the cleaning tank. A clearance is provided between the processing object and the cleaning tank, and a process object loading step for mounting the object to be processed in the cleaning tank, and a cleaning fluid is caused to flow in the cleaning tank. The surface of the workpiece to be wetted is cleaned or rinsed with the cleaning fluid, and the cleaning fluid flows out of the gap by the action of the pressure of the cleaning fluid in the cleaning tank. And a cleaning / rinsing step for cleaning or rinsing the back surface of the substrate.

請求項１４に記載の発明に係る洗浄方法は、請求項１３に記載の発明において、上記洗浄・リンス工程の終了後に、被処理物を洗浄槽内に装着した状態で乾燥用流体を洗浄槽内へ導き、上記被処理物を乾燥する乾燥工程を有することを特徴とするものである。   A cleaning method according to a fourteenth aspect of the present invention is the cleaning method according to the thirteenth aspect of the present invention, wherein after the cleaning and rinsing step, the drying fluid is put into the cleaning tank in a state where the object to be processed is mounted in the cleaning tank. And a drying step of drying the object to be processed.

請求項１５に記載の発明に係る洗浄方法は、請求項１３または１４に記載の発明において、上記洗浄・リンス工程では、洗浄槽に装着された被処理物に対向して平行に設置された超音波振動装置からの超音波を用いて洗浄を実施することを特徴とするものである。   A cleaning method according to a fifteenth aspect of the present invention is the cleaning method according to the thirteenth or fourteenth aspect, wherein in the cleaning and rinsing step, the cleaning method is installed in parallel with the workpiece mounted on the cleaning tank. Cleaning is performed using ultrasonic waves from a sound wave vibration device.

請求項１６に記載の発明に係る洗浄方法は、請求項１４に記載の発明において、上記乾燥工程では、乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とするものである。   According to a sixteenth aspect of the present invention, in the cleaning method according to the fourteenth aspect of the present invention, in the drying step, first, a vapor of an organic solvent is used as a drying fluid, and then a heated inert gas is used. It is characterized by this.

請求項１７に記載の発明に係る保持手段は、装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、この一側壁の外側から上記開口を通して、上記一側壁の内側に搬入された上記被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とする保持手段とを有し、洗浄槽内の洗浄用流体により、当該洗浄槽に配設された被処理物を洗浄またはリンスする洗浄装置において、上記保持手段は、旋回流により発生する負圧の作用で、被処理物の裏面を非接触状態で保持することを特徴とする。   According to a seventeenth aspect of the present invention, there is provided a holding means that is in contact with an apparatus housing to constitute the cleaning tank, and that has one side wall in which an opening corresponding to the outer shape of the workpiece is formed, and an outer side of the one side wall. Through the opening, and holding means for holding the back surface of the object to be processed carried into the inside of the one side wall so as to stand upright in the vertical direction, and for cleaning in the cleaning tank In the cleaning apparatus for cleaning or rinsing the object to be processed disposed in the cleaning tank with a fluid, the holding means holds the back surface of the object to be processed in a non-contact state due to the negative pressure generated by the swirling flow. It is characterized by doing.

請求項１８に記載の発明に係る乾燥装置は、乾燥槽内の乾燥用流体により、当該乾燥槽に配設された被処理物を乾燥する乾燥装置であって、装置躯体に当接して上記乾燥槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、この一側壁の外側から上記開口を通して、上記一側壁の内側に搬入された上記被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とする保持手段と、上記一側壁の内面における上記開口周囲に設けられ、上記被処理物の裏面が接触することで、この被処理物と上記開口周囲との間に隙間を形成する隙間形成部材と、を有することを特徴とする。   A drying apparatus according to an eighteenth aspect of the present invention is a drying apparatus that dries an object to be processed disposed in a drying tank with a drying fluid in the drying tank, and is in contact with an apparatus housing to perform the drying. A side wall in which an opening corresponding to the outer shape of the object to be processed is formed and a back surface of the object to be processed carried into the inside of the one side wall through the opening from the outside of the one side wall. The holding means for allowing the object to stand upright in the vertical direction and the opening around the inner surface of the one side wall are provided around the opening, and the back surface of the object to be processed is in contact with the object to be processed. And a gap forming member that forms a gap with the periphery of the opening.

請求項１９に記載の発明に係る乾燥装置は、請求項１８に記載の発明において、上記乾燥槽に、乾燥用流体を乾燥槽内へ導く乾燥用流体供給槽が連設されたことを特徴とする。   The drying apparatus according to the invention described in claim 19 is characterized in that, in the invention according to claim 18, a drying fluid supply tank for guiding the drying fluid into the drying tank is connected to the drying tank. To do.

請求項２０に記載の発明に係る乾燥装置は、請求項１８または１９に記載の発明において、上記乾燥用流体として、まず有機溶剤ミストを用い、次に加熱された不活性ガスを用いることを特徴とする。   A drying apparatus according to a twentieth aspect of the invention is characterized in that, in the invention of the eighteenth or nineteenth aspect, as the drying fluid, first, an organic solvent mist is used, and then a heated inert gas is used. And

請求項２１に記載の発明に係る洗浄装置は、洗浄槽内の洗浄液により、当該洗浄槽内に配設された被処理物を洗浄する洗浄装置であって、装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁を有し、上記被処理物が縦方向に起立し、且つ上記被処理物の処理面と反対の面の周縁部が上記一側壁の内面における上記開口周囲に密着されて上記開口が閉塞され、上記被処理物が上記処理面を上記洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれに臨ませて当該洗浄槽に装着される構成としたことを特徴とするものである。   A cleaning device according to the invention of claim 21 is a cleaning device for cleaning an object disposed in the cleaning tank with a cleaning liquid in the cleaning tank, wherein the cleaning tank is in contact with an apparatus housing. And having a side wall in which an opening corresponding to the outer shape of the object to be processed is formed, the object to be processed is erected in the vertical direction, and a peripheral edge of the surface opposite to the processing surface of the object to be processed The portion is in close contact with the periphery of the opening on the inner surface of the one side wall, the opening is closed, and the object to be processed has the processing surface in the cleaning tank and the surface opposite to the processing surface outside the cleaning tank. It is characterized by being configured to be attached to the cleaning tank.

請求項２２に記載の発明に係る洗浄装置は、洗浄槽内の洗浄液により、当該洗浄槽内に配設された被処理物を洗浄する洗浄装置であって、装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、上記被処理物の処理面と反対の面を、上記洗浄槽の外側から上記開口を通して保持する保持手段とを有し、この保持手段により、上記被処理物が縦方向に起立し、且つ上記処理面と反対の面の周縁部が上記一側壁の内面における上記開口周囲に密着されて上記開口が閉塞され、上記被処理物が上記処理面を上記洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれに臨ませて当該洗浄槽に装着される構成としたことを特徴とするものである。   A cleaning apparatus according to a twenty-second aspect of the present invention is a cleaning apparatus that cleans an object to be processed disposed in the cleaning tank with a cleaning liquid in the cleaning tank, the cleaning tank being in contact with an apparatus housing. And a holding means for holding one side wall in which an opening corresponding to the outer shape of the object to be processed is formed, and a surface opposite to the processing surface of the object to be processed from the outside of the cleaning tank through the opening. By this holding means, the workpiece is erected in the vertical direction, and the peripheral edge of the surface opposite to the processing surface is brought into close contact with the periphery of the opening on the inner surface of the one side wall, thereby closing the opening. The object to be treated is mounted on the cleaning tank with the processing surface facing the cleaning tank and the surface opposite to the processing surface facing the outside of the cleaning tank. It is.

請求項２３に記載の発明に係る洗浄装置は、請求項２１または２２に記載の発明において、上記洗浄槽内へは、この洗浄槽の外部に設置されたフィルタによりろ過された洗浄液が循環して供給されることを特徴とするものである。   A cleaning device according to a twenty-third aspect of the present invention is the cleaning device according to the twenty-first or twenty-second aspect, wherein a cleaning liquid filtered by a filter installed outside the cleaning tank is circulated into the cleaning tank. It is characterized by being supplied.

請求項２４に記載の発明に係る洗浄装置は、請求項２１乃至２３のいずれかに記載の発明において、上記洗浄装置には、被処理物に対向すると共に平行して、超音波振動装置が配置されたことを特徴とするものである。   A cleaning device according to a twenty-fourth aspect of the present invention is the cleaning device according to any one of the twenty-first to twenty-third aspects, wherein the ultrasonic vibration device is disposed in the cleaning device so as to face and be parallel to the object to be processed. It is characterized by that.

請求項２５に記載の発明に係る洗浄装置は、請求項２１乃至２４のいずれかに記載の発明において、上記一側壁が、装置躯体に対し開口の軸方向に移動可能に構成され、この一側壁の上記装置躯体からの離反時に被処理物が搬入されて保持手段により上記一側壁に装着され、この一側壁と上記装置躯体との当接により洗浄槽が構成されることを特徴とするものである。   A cleaning apparatus according to a twenty-fifth aspect of the present invention is the cleaning apparatus according to any of the twenty-first to twenty-fourth aspects, wherein the one side wall is configured to be movable in the axial direction of the opening with respect to the apparatus housing. When the workpiece is separated from the apparatus housing, the object to be processed is loaded and attached to the one side wall by the holding means, and the cleaning tank is configured by the contact between the one side wall and the apparatus housing. is there.

請求項２６に記載の発明に係る洗浄装置は、請求項２２乃至２５のいずれかに記載の発明において、上記保持手段が、旋回流により発生する負圧の作用で、被処理物の処理面と反対の面を非接触状態で保持することを特徴とするものである。   A cleaning apparatus according to a twenty-sixth aspect of the present invention is the cleaning apparatus according to any of the twenty-second to twenty-fifth aspects, wherein the holding means has a treatment surface of an object to be processed by the action of a negative pressure generated by a swirling flow. The opposite surface is held in a non-contact state.

請求項２７に記載の発明に係る洗浄装置は、請求項２１乃至２６のいずれかに記載の発明において、上記洗浄槽には、乾燥用流体を洗浄槽内へ導く乾燥用流体供給槽が連設されたことを特徴とするものである。   A cleaning device according to a twenty-seventh aspect of the present invention is the cleaning device according to any one of the twenty-first to twenty-sixth aspects, wherein the cleaning tank is continuously provided with a drying fluid supply tank that guides the drying fluid into the cleaning tank. It is characterized by that.

請求項２８に記載の発明に係る洗浄装置は、請求項２７に記載の発明において、上記乾燥用流体供給槽が、高温の有機溶剤及び不活性ガスが供給される２流体ノズルを備え、上記有機溶剤及び不活性ガスの温度は、上記２流体ノズルからの流体の噴射と同時に上記流体が気化し得る温度であることを特徴とするものである。   According to a twenty-eighth aspect of the present invention, in the cleaning apparatus according to the twenty-seventh aspect, the drying fluid supply tank includes a two-fluid nozzle to which a high-temperature organic solvent and an inert gas are supplied. The temperature of the solvent and the inert gas is a temperature at which the fluid can be vaporized simultaneously with the ejection of the fluid from the two-fluid nozzle.

請求項２９に記載の発明に係る洗浄装置は、請求項２８に記載の発明において、上記有機溶剤が、２流体ノズルに接続されるパイプに巻き付けられた面状発熱体によって加熱されることを特徴とするものである。   A cleaning apparatus according to a twenty-ninth aspect of the present invention is the cleaning apparatus according to the twenty-eighth aspect, wherein the organic solvent is heated by a planar heating element wound around a pipe connected to a two-fluid nozzle. It is what.

請求項３０に記載の発明に係る洗浄装置は、請求項２９に記載の発明において、上記乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とするものである。   A cleaning apparatus according to a thirty-third aspect of the invention is characterized in that, in the thirty-ninth aspect of the invention, the drying fluid is first an organic solvent vapor and then a heated inert gas. To do.

請求項３１に記載の発明に係る洗浄方法は、被処理物を洗浄槽内に搬入し、この被処理物の処理面を上記洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれ臨ませて、当該被処理物を上記洗浄槽に装着する被処理物搬入工程と、上記洗浄槽内で洗浄液を流動させ、この洗浄液に接液する上記被処理物の上記処理面を洗浄する洗浄工程とを有することを特徴とするものである。   A cleaning method according to a thirty-first aspect of the present invention carries an object to be processed into a cleaning tank, the processing surface of the object to be processed is in the cleaning tank, and the surface opposite to the processing surface is outside the cleaning tank. The process object carrying-in process of attaching the object to be processed to the cleaning tank, and flowing the cleaning liquid in the cleaning tank and cleaning the processing surface of the object to be in contact with the cleaning liquid. And a cleaning step.

請求項３２に記載の発明に係る洗浄方法は、請求項３１に記載の発明において、上記洗浄工程の終了後に、被処理物を洗浄槽内に装着した状態で乾燥用流体を洗浄槽内へ導き、上記被処理物を乾燥する乾燥工程を有することを特徴とするものである。   A cleaning method according to a thirty-second aspect of the present invention is the cleaning method according to the thirty-first aspect, wherein after the cleaning step is finished, the drying fluid is introduced into the cleaning tank in a state where the object to be processed is mounted in the cleaning tank. And a drying step of drying the object to be processed.

請求項３３に記載の発明に係る洗浄方法は、請求項３１または３２に記載の発明において、上記洗浄工程では、洗浄槽外に設置されたフィルタと上記洗浄槽との間で洗浄液を循環することを特徴とするものである。   A cleaning method according to a thirty-third aspect of the present invention is the cleaning method according to the thirty-first or thirty-second aspect, wherein in the cleaning step, the cleaning liquid is circulated between a filter installed outside the cleaning tank and the cleaning tank. It is characterized by.

請求項３４に記載の発明に係る洗浄方法は、請求項３１乃至３３のいずれかに記載の発明において、上記洗浄工程では、洗浄槽に装着された被処理物に対向して平行に設置された超音波振動装置からの超音波を用いて洗浄を実施することを特徴とするものである。   A cleaning method according to a thirty-fourth aspect of the present invention is the cleaning method according to any of the thirty-first to thirty-third aspects, wherein, in the cleaning step, the cleaning method is installed in parallel to face the workpiece mounted on the cleaning tank. Cleaning is performed using ultrasonic waves from an ultrasonic vibration device.

請求項３５に記載の発明に係る洗浄方法は、請求項３１乃至３４のいずれかに記載の発明において、上記乾燥工程では、乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とするものである。   A cleaning method according to a thirty-fifth aspect of the present invention is the cleaning method according to any of the thirty-first to thirty-fourth aspects, wherein in the drying step, an organic solvent vapor is first used as a drying fluid and then heated. An inert gas is used.

請求項１または４に記載の発明によれば、装置躯体に当接して洗浄槽を構成する一側壁が、被処理物の外形に対応する開口を備え、保持手段が、一側壁の外側から上記開口を通して、この一側壁の内側に搬入された被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とし、一側壁の内面における開口周囲に設けられた隙間形成部材に被処理物の裏面が接触することで、この被処理物と上記開口周囲との間に隙間を形成する。従って、洗浄槽内に洗浄用流体が供給されたときには、この洗浄槽内の洗浄用流体により被処理物の表面を洗浄またはリンスすると共に、洗浄槽内における洗浄用流体の圧力（水圧）の作用で、隙間形成部材により形成された隙間を経て洗浄槽から流出した洗浄用流体が、被処理物の裏面を洗浄またはリンスする。この結果、被処理物の表面及び裏面を同時に洗浄またはリンスすることができる。さらに、洗浄用流体が隙間形成部材により形成された隙間を経て洗浄槽外へ流出し、被処理物の裏面を洗浄またはリンスする過程において、被処理物の端面も洗浄またはリンスすることができる。   According to invention of Claim 1 or 4, the one side wall which contact | abuts to an apparatus housing and comprises a washing tank is equipped with the opening corresponding to the external shape of a to-be-processed object, and a holding means is the said from the outer side of one side wall. Through the opening, it is possible to hold the back surface of the workpiece carried inside the one side wall, and the workpiece is raised in the vertical direction, and the gap forming member provided around the opening on the inner surface of the one side wall is covered. A gap is formed between the object to be processed and the periphery of the opening when the back surface of the object to be processed comes into contact. Therefore, when the cleaning fluid is supplied into the cleaning tank, the surface of the object to be processed is cleaned or rinsed with the cleaning fluid in the cleaning tank, and the pressure (water pressure) of the cleaning fluid in the cleaning tank is applied. Thus, the cleaning fluid that has flowed out of the cleaning tank through the gap formed by the gap forming member cleans or rinses the back surface of the object to be processed. As a result, the front and back surfaces of the workpiece can be cleaned or rinsed simultaneously. Further, in the process of cleaning fluid flowing out of the cleaning tank through the gap formed by the gap forming member and cleaning or rinsing the back surface of the workpiece, the end surface of the workpiece can also be cleaned or rinsed.

また、被処理物の裏面を洗浄またはリンスした洗浄用流体は、洗浄槽内における洗浄用流体の圧力（水圧）の作用によってこの洗浄槽内へ流入することがないので、被処理物の裏面を洗浄またはリンスした洗浄用流体によって、被処理物の表面が汚染される転写汚染を確実に防止できる。   In addition, the cleaning fluid that has cleaned or rinsed the back surface of the object to be processed does not flow into the cleaning tank due to the pressure (water pressure) of the cleaning fluid in the cleaning tank. The cleaning contamination that has been cleaned or rinsed can reliably prevent transfer contamination that contaminates the surface of the workpiece.

請求項２に記載の発明によれば、一側壁の開口周囲と、縦方向に起立して配設された被処理物との間の隙間は、上方部分が下方部分よりも広く設定されている。従って、上記隙間の下方部分から流出する洗浄槽内の洗浄用流体の流出量を抑制でき、この洗浄槽内に洗浄用流体を良好に貯溜できると共に、上記隙間の上方部分を広く設定することで、この上方部分から流出する洗浄用流体の流出量が増大し、被処理物の裏面の全面を均一に洗浄またはリンスすることができる。   According to the second aspect of the present invention, the upper portion of the clearance between the periphery of the opening of the one side wall and the workpiece disposed upright in the vertical direction is set wider than the lower portion. . Accordingly, it is possible to suppress the outflow amount of the cleaning fluid in the cleaning tank flowing out from the lower part of the gap, and to store the cleaning fluid in the cleaning tank satisfactorily, and to set the upper part of the gap wide. The outflow amount of the cleaning fluid flowing out from the upper portion is increased, and the entire back surface of the object to be processed can be uniformly cleaned or rinsed.

請求項３に記載の発明によれば、洗浄装置には、被処理物に対向すると共に平行して超音波振動装置が配置されたことから、超音波振動装置により発生する超音波が、洗浄槽内の洗浄用流体に作用して被処理物の表面の全面を均一に超音波洗浄またはリンスすると共に、被処理物の裏面を流れる洗浄用流体に作用して、当該被処理物の裏面の全面をも均一に超音波洗浄またはリンスする。この結果、被処理物の表面及び裏面をムラなく良好に洗浄またはリンスすることができる。   According to the third aspect of the present invention, since the ultrasonic vibration device is disposed in parallel with the object to be processed in the cleaning device, the ultrasonic wave generated by the ultrasonic vibration device is The entire surface of the object to be processed is ultrasonically cleaned or rinsed by acting on the cleaning fluid in the inside, and the entire surface of the back surface of the object to be processed is operated by acting on the cleaning fluid flowing on the back surface of the object to be processed. Evenly ultrasonically wash or rinse. As a result, the front and back surfaces of the workpiece can be cleaned or rinsed satisfactorily without unevenness.

請求項５または２６に記載の発明によれば、被処理物の裏面が非接触状態で保持手段に保持されることから、この裏面が保持手段により保持されることによって汚染されることを防止できるとともに、従来、チャック等が接して洗浄が困難であった被処理物の端面においても、同様に汚染の防止ができる。   According to invention of Claim 5 or 26, since the back surface of a to-be-processed object is hold | maintained to a holding means in a non-contact state, it can prevent that this back surface is contaminated by being hold | maintained by a holding means. At the same time, contamination can be prevented in the same manner on the end face of the object to be processed, which has conventionally been difficult to clean due to contact with a chuck or the like.

請求項６に記載の発明によれば、保持手段は、一側壁に対し開口の軸方向に相対移動可能に当該一側壁に設置され、洗浄槽内に洗浄用流体が供給されたときに被処理物から退避して、この被処理物の保持を解除するよう構成されている。従って、被処理物は、洗浄槽内に洗浄用流体が供給されたときにはこの洗浄用流体の圧力（水圧）によって保持され、上記以外のときには保持手段によって非接触状態に保持されるので、いずれの場合にも汚染されることがない。また、従来、チャック等が接して洗浄が困難であった被処理物の端面においても、同様に汚染の防止ができる。   According to the sixth aspect of the present invention, the holding means is installed on the one side wall so as to be relatively movable in the axial direction of the opening with respect to the one side wall, and is treated when the cleaning fluid is supplied into the cleaning tank. It is configured to retreat from the object and release the object to be processed. Therefore, the object to be treated is held by the pressure (water pressure) of the cleaning fluid when the cleaning fluid is supplied into the cleaning tank, and is held in a non-contact state by the holding means in other cases. It is not contaminated in some cases. In addition, contamination can be prevented in the same manner even on the end surface of an object to be processed that has conventionally been difficult to clean due to contact with a chuck or the like.

請求項７に記載の発明によれば、一側壁に設置された受け部材が、被処理物を点接触状態で支持することから、被処理物が受け部材に支持されることで発生する汚染を抑制することができる。   According to the seventh aspect of the present invention, since the receiving member installed on one side wall supports the object to be processed in a point contact state, the contamination that occurs when the object to be processed is supported by the receiving member. Can be suppressed.

請求項８、２３または３３に記載の発明によれば、洗浄槽内へは、この洗浄槽の外部に設置されたフィルタによりろ過された洗浄用流体が循環して供給されることから、洗浄用流体の繰り返しの使用によってその消費量を低減できると共に、洗浄用流体の温度管理も容易化できる。   According to the invention of claim 8, 23 or 33, the cleaning fluid filtered by the filter installed outside the cleaning tank is circulated and supplied into the cleaning tank. The consumption of the fluid can be reduced by repeatedly using the fluid, and the temperature control of the cleaning fluid can be facilitated.

請求項９または２７に記載の発明によれば、洗浄槽には、乾燥用流体を洗浄槽内へ導く乾燥用流体供給槽が連設されたことから、被処理物を洗浄槽内に装着させた状態で乾燥用流体供給槽からの乾燥用流体により上記被処理物を乾燥できるので、洗浄・リンス工程及び乾燥工程を連続して迅速に実施できる。   According to the invention described in claim 9 or 27, since the drying tank is continuously provided with the drying fluid supply tank for introducing the drying fluid into the cleaning tank, the object to be treated is mounted in the cleaning tank. In this state, the object to be treated can be dried with the drying fluid from the drying fluid supply tank, so that the washing / rinsing step and the drying step can be performed quickly and continuously.

請求項１０または２８に記載の発明によれば、２流体ノズルに供給される高温の有機溶剤及び不活性ガスの温度が、２流体ノズルからの流体の噴射と同時に流体が気化し得る温度であることから、液体の噴射に比較して、被処理物に付着した水分の置換効率が上がるとともに、その噴射液量のみならず、排液の量も減らすことが可能である。   According to the invention of claim 10 or 28, the temperature of the high-temperature organic solvent and the inert gas supplied to the two-fluid nozzle is a temperature at which the fluid can be vaporized simultaneously with the ejection of the fluid from the two-fluid nozzle. Therefore, as compared with the liquid injection, the efficiency of replacing the water adhering to the object to be processed is increased, and not only the amount of the injection liquid but also the amount of the drainage can be reduced.

請求項１１または２９に記載の発明によれば、有機溶剤を、パイプに巻き付けられた面状発熱体によって加熱することから、簡易な構成で有機溶剤の加熱が行えるとともに、パイプを例えば、水や、高純度薬液に対して金属イオンの溶出を抑えたＳＵＳ配管で構成し、上記ＳＵＳ配管にアースを接続することにより、帯電を防止して、発火しやすい有機溶剤に対しても防爆を容易に達成することができる。   According to the invention described in claim 11 or 29, since the organic solvent is heated by the sheet heating element wound around the pipe, the organic solvent can be heated with a simple configuration, and the pipe is made of, for example, water or SUS pipe with reduced elution of metal ions for high-purity chemical solution, and connecting the ground to the SUS pipe prevents charging and makes it easy for explosion-proof organic solvents Can be achieved.

請求項１２または３０に記載の発明によれば、乾燥用流体として、まず、有機溶剤のベーパーを用いて被処理物に付着した水分を置換して乾燥させ、次に、加熱された不活性ガスを用いて被処理物を急速に乾燥させることから、被処理物に付着した水分を確実且つ迅速に乾燥させることができる。   According to the invention described in claim 12 or 30, as the drying fluid, first, the moisture adhering to the object to be treated is replaced and dried by using an organic solvent vapor, and then the heated inert gas. Since the object to be processed is rapidly dried using the water, the moisture adhering to the object to be processed can be surely and rapidly dried.

請求項１３に記載の発明によれば、被処理物が、表面を洗浄槽内に、裏面を洗浄槽外にそれぞれ臨ませ、洗浄槽との間に隙間を設けて当該洗浄槽に装着されることから、洗浄槽内の洗浄用流体に接液する被処理物の表面を、当該洗浄用流体によって洗浄またはリンスできると共に、上記隙間から流出する洗浄用流体によって、被処理物の裏面を洗浄またはリンスできるので、被処理物の表面及び裏面を同時に洗浄またはリンスできる。さらに、洗浄用流体が、上記隙間を経て洗浄槽外へ流出し、被処理物の裏面を洗浄またはリンスする過程において被処理物の端面も洗浄またはリンスすることができる。   According to the invention described in claim 13, the object to be processed is mounted on the cleaning tank with the front surface facing the cleaning tank and the back surface facing the outside of the cleaning tank, with a gap between the processing tank and the cleaning tank. Therefore, the surface of the object to be processed that comes into contact with the cleaning fluid in the cleaning tank can be cleaned or rinsed by the cleaning fluid, and the back surface of the object to be processed is cleaned or cleaned by the cleaning fluid that flows out of the gap. Since rinsing is possible, the front and back surfaces of the object to be processed can be cleaned or rinsed simultaneously. Further, the cleaning fluid flows out of the cleaning tank through the gap, and the end surface of the processing object can be cleaned or rinsed in the process of cleaning or rinsing the back surface of the processing object.

また、被処理物の裏面を洗浄またはリンスした洗浄用流体は、洗浄槽内における洗浄用流体の圧力（水圧）の作用によってこの洗浄槽内へ流入することがないので、被処理物の裏面を洗浄またはリンスした洗浄用流体によって被処理物の表面が汚染される転写汚染を確実に防止できる。   In addition, the cleaning fluid that has cleaned or rinsed the back surface of the object to be processed does not flow into the cleaning tank due to the pressure (water pressure) of the cleaning fluid in the cleaning tank. Transfer contamination in which the surface of the object to be processed is contaminated by the cleaning fluid that has been cleaned or rinsed can be reliably prevented.

請求項１４または請求項３２に記載の発明によれば、被処理物の洗浄・リンス工程の終了後に、被処理物を洗浄槽内に装着した状態で乾燥用流体を洗浄槽内へ導いて、この被処理物を乾燥することから、洗浄・リンス工程と乾燥工程とを連続して迅速に実施できる。   According to the invention described in claim 14 or claim 32, after the cleaning / rinsing process of the object to be processed, the drying fluid is guided into the cleaning tank in a state where the object to be processed is mounted in the cleaning tank, Since this object to be treated is dried, the washing / rinsing step and the drying step can be carried out quickly and continuously.

請求項１５に記載の発明によれば、洗浄・リンス工程において、洗浄槽に装着された被処理物に対向して平行に設置された超音波振動装置からの超音波を用いて洗浄またはリンスを実施することから、超音波が被処理物の表面及び裏面に均一に作用するので、洗浄またはリンスをムラなくに良好に実施できる。   According to the invention described in claim 15, in the cleaning and rinsing process, cleaning or rinsing is performed using ultrasonic waves from an ultrasonic vibration device installed in parallel with the object to be processed mounted in the cleaning tank. Since the ultrasonic wave acts uniformly on the front and back surfaces of the object to be processed, cleaning or rinsing can be performed satisfactorily without unevenness.

請求項１６または３５に記載の発明によれば、乾燥工程では、まず、有機溶剤のベーパーで被処理物に付着した水分を置換させ、次に、加熱された不活性ガスを用いて被処理物を乾燥させることから、被処理物に付着した水分を確実且つ迅速に乾燥させることができる。   According to the invention described in claim 16 or 35, in the drying step, first, the water adhering to the object to be processed is replaced with the vapor of the organic solvent, and then the object to be processed using the heated inert gas. Since the water is dried, the moisture adhering to the object to be processed can be surely and quickly dried.

請求項１７に記載の発明によれば、被処理物の保持手段が、被処理物の裏面を非接触状態で保持するため、この裏面が保持手段により保持されることによって汚染されることを防止できるとともに、従来、チャック等が接して洗浄が困難であった被処理物の端面においても、同様に汚染の防止ができる。   According to the invention described in claim 17, since the holding means for the object to be processed holds the back surface of the object to be processed in a non-contact state, the back surface is prevented from being contaminated by being held by the holding means. In addition, contamination can be prevented in the same way even on the end face of the workpiece that has been conventionally difficult to clean due to contact with a chuck or the like.

請求項１８及び１９に記載の発明によれば、上記被処理物を保持手段により縦方向に起立した状態で乾燥出来るので、乾燥槽ひいては乾燥装置全体の省スペース化を実現できる。   According to invention of Claim 18 and 19, since the said to-be-processed object can be dried in the state which stood up by the holding | maintenance means, the space saving of the drying tank and the whole drying apparatus is realizable.

請求項２０に記載の発明によれば、乾燥用流体として、まず、有機溶剤のベーパーを用いて被処理物に付着した水分を置換して乾燥させ、次に、加熱された不活性ガスを用いて被処理物を急速に乾燥させることから、被処理物に付着した水分を確実且つ迅速に乾燥させることができる。   According to the twentieth aspect of the invention, as the drying fluid, first, the moisture attached to the object to be processed is replaced by using an organic solvent vapor and dried, and then the heated inert gas is used. Thus, the object to be processed is rapidly dried, so that moisture adhering to the object to be processed can be surely and quickly dried.

請求項２１、２２または２５に記載の発明によれば、洗浄槽の一側壁に開口が形成され、被処理物が縦方向に起立し、且つ処理面と反対の面の周縁部が一側壁の内面における開口周囲に密着されて上記開口が閉塞され、被処理物が処理面を洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれに臨ませて当該洗浄槽に装着されることから、被処理物の処理面に洗浄液が接し、処理面と反対の面に洗浄液が接しないので、処理面と反対の面の汚れが処理面側に回り込んで当該処理面が汚染される転写汚染を確実に防止できる。この場合、被処理物の処理面と反対の面を上記洗浄槽外に臨ませて当該洗浄槽に装着することから、被処理物の端面も洗浄することができる。   According to the invention of claim 21, 22 or 25, an opening is formed in one side wall of the cleaning tank, the workpiece is erected in the vertical direction, and the peripheral edge of the surface opposite to the processing surface is one side wall. The opening is closed by close contact with the opening on the inner surface, and the object to be processed is mounted in the cleaning tank with the processing surface facing the cleaning tank and the surface opposite to the processing surface facing the outside of the cleaning tank. Therefore, the cleaning liquid comes into contact with the processing surface of the object to be processed, and the cleaning liquid does not come into contact with the surface opposite to the processing surface, so that the dirt on the surface opposite to the processing surface wraps around the processing surface and contaminates the processing surface. It is possible to reliably prevent transfer contamination. In this case, since the surface opposite to the processing surface of the object to be processed faces the outside of the cleaning tank and is attached to the cleaning tank, the end surface of the object to be processed can also be cleaned.

請求項２４に記載の発明によれば、洗浄装置には、被処理物に対向すると共に平行して超音波振動装置が配置されたことから、超音波振動装置により発生する超音波が被処理物の処理面の全面に均一に作用するので、当該被処理物の処理面をムラなく良好に洗浄することができる。   According to the twenty-fourth aspect of the present invention, since the ultrasonic vibration device is disposed in parallel with the cleaning apparatus so as to face the object to be processed, the ultrasonic wave generated by the ultrasonic vibration apparatus is processed. Therefore, the processed surface of the workpiece can be cleaned satisfactorily without unevenness.

請求項３１に記載の発明によれば、被処理物が、その処理面を洗浄槽内に、処理面と反対の面を洗浄槽外にそれぞれ臨ませて当該洗浄槽内に搬入され装着されることから、被処理物の処理面が洗浄液に接し、処理面と反対の面が洗浄液に接しないので、この処理面と反対の面の汚れが処理面側に回り込んでこの処理面が汚染される転写汚染を確実に防止できる。   According to the invention described in claim 31, the object to be processed is loaded and mounted in the cleaning tank with the processing surface facing the cleaning tank and the surface opposite to the processing surface facing the outside of the cleaning tank. As a result, the processing surface of the workpiece is in contact with the cleaning liquid, and the surface opposite to the processing surface is not in contact with the cleaning liquid, so that the dirt on the surface opposite to the processing surface wraps around the processing surface and contaminates the processing surface. It is possible to reliably prevent transfer contamination.

請求項３４に記載の発明によれば、洗浄工程において、洗浄槽に装着された被処理物に対向して平行に設置された超音波振動装置からの超音波を用いて洗浄を実施することから、超音波が被処理物の処理面に均一に作用するので、洗浄をムラなくに良好に実施できる。   According to the invention described in claim 34, in the cleaning step, cleaning is performed using ultrasonic waves from an ultrasonic vibration device installed in parallel to face the workpiece mounted in the cleaning tank. Since the ultrasonic wave acts uniformly on the processing surface of the object to be processed, the cleaning can be performed satisfactorily without unevenness.

以下、本発明を実施するための最良の形態を、図面に基づき説明する。   The best mode for carrying out the present invention will be described below with reference to the drawings.

［Ａ］第１の実施の形態（図１〜図１７）
図１は、本発明に係る洗浄装置の第１の実施の形態が備えられた洗浄設備を、一部を切り欠いて示す斜視図である。図２は、図１の洗浄装置の待機状態を、斜め正面側から目視して示す斜視図である。図３は、図１の洗浄装置の待機状態を、斜め背面側から目視して示す斜視図である。図１３は、図２の洗浄装置の原理を説明するための概略構成を示す断面図である。 [A] First embodiment (FIGS. 1 to 17)
FIG. 1 is a perspective view showing a cleaning facility provided with a first embodiment of a cleaning apparatus according to the present invention, with a part cut away. FIG. 2 is a perspective view showing the standby state of the cleaning device of FIG. 1 as viewed from an oblique front side. FIG. 3 is a perspective view showing the standby state of the cleaning apparatus of FIG. 1 as viewed from the oblique rear side. FIG. 13 is a cross-sectional view showing a schematic configuration for explaining the principle of the cleaning apparatus of FIG.

図１に示す洗浄設備１０は、被処理物としての半導体基板（例えばウエハ１）を洗浄する複数台の洗浄装置１１（後に詳説）が配置された洗浄装置配置部１２と、この洗浄装置配置部１２に隣接して配置された薬液供給部１３と、この薬液供給部１３と反対の位置に配置されたウエハ給排部１４と、洗浄装置配置部１２とウエハ給排部１４との間に配置された搬送用ロボット１５と、薬液供給部１３の上方に配置された電装部１６とを有して構成される。   A cleaning facility 10 shown in FIG. 1 includes a cleaning device placement unit 12 in which a plurality of cleaning devices 11 (details will be described later) for cleaning a semiconductor substrate (for example, a wafer 1) as an object to be processed, and the cleaning device placement unit. 12 is disposed between the chemical supply unit 13 disposed adjacent to the wafer 12, the wafer supply / discharge unit 14 disposed at a position opposite to the chemical supply unit 13, and the cleaning apparatus placement unit 12 and the wafer supply / discharge unit 14. The transfer robot 15 and the electrical component 16 disposed above the chemical solution supply unit 13 are configured.

上記薬液供給部１３は、アルカリ洗浄液、酸洗浄液、リンス液としての純水、並びに乾燥用流体としての有機溶剤及び不活性ガスなどを、洗浄装置配置部１２の洗浄装置１１へ供給するものである。尚、上記洗浄液及びリンス液を洗浄用流体と称する。また、上記ウエハ給排部１４は、複数枚のウエハ１が水平状態で収納されたウエハ搬送容器(所謂フープ)１７を載置する載置台１８と、上記ウエハ搬送容器１７の蓋を開閉する図示しない容器オープナーとを備える。ウエハ搬送容器１７内のウエハ１を洗浄装置１１へ送り出す際、または洗浄装置１１にて処理されたウエハ１をウエハ搬送容器１７内へ収納する際に、容器オープナーがウエハ搬送容器１７の蓋を開ける。   The chemical solution supply unit 13 supplies an alkaline cleaning solution, an acid cleaning solution, pure water as a rinsing solution, and an organic solvent and an inert gas as a drying fluid to the cleaning device 11 of the cleaning device arrangement unit 12. . The cleaning liquid and the rinsing liquid are referred to as a cleaning fluid. The wafer supply / discharge unit 14 opens and closes a mounting table 18 on which a wafer transfer container (so-called hoop) 17 in which a plurality of wafers 1 are stored in a horizontal state is placed, and a lid of the wafer transfer container 17. A container opener. When the wafer 1 in the wafer transfer container 17 is sent to the cleaning apparatus 11 or when the wafer 1 processed by the cleaning apparatus 11 is stored in the wafer transfer container 17, the container opener opens the lid of the wafer transfer container 17. .

上記搬送用ロボット１５は、ロボット本体１９に第１アーム２０Ａ、第２アーム２０Ｂ、第３アーム２０Ｃ及びハンド部２０Ｄが順次連設されたものである。ロボット本体１９と第１アーム２０Ａとの間に第１軸２１Ａ、第１アーム２０Ａと第２アーム２０Ｂとの間に第２軸２１Ｂ、第２アーム２０Ｂと第３アーム２０Ｃとの間に第３軸２１Ｃ、第３アーム２０Ｃとハンド部２０Ｄとの間に第４軸２１Ｄがそれぞれ配設される。第１軸２１Ａ、第２軸２１Ｂ及び第３軸２１Ｃを介して、第１アーム２０Ａ、第２アーム２０Ｂ及び第３アーム２０Ｃが矢印Ｐに示すように水平面内で回転可能に設けられ、また、第４軸２１Ｄを介してハンド部２０Ｄが水平面と鉛直面との間で回転可能に、つまり第３アーム２０Ｃに対し矢印Ｑ方向に回転可能に設けられる。また、ロボット本体１９は、レール２２に沿って洗浄装置配置部１２における洗浄装置１１の配列方向に移動可能に構成される。   The transfer robot 15 includes a robot body 19 in which a first arm 20A, a second arm 20B, a third arm 20C, and a hand unit 20D are sequentially connected. The first shaft 21A is between the robot body 19 and the first arm 20A, the second shaft 21B is between the first arm 20A and the second arm 20B, and the third shaft is between the second arm 20B and the third arm 20C. A fourth shaft 21D is disposed between the shaft 21C, the third arm 20C, and the hand portion 20D. The first arm 20A, the second arm 20B, and the third arm 20C are provided to be rotatable in a horizontal plane as indicated by an arrow P via the first shaft 21A, the second shaft 21B, and the third shaft 21C. The hand portion 20D is provided so as to be rotatable between a horizontal plane and a vertical plane via the fourth shaft 21D, that is, to be rotatable in the arrow Q direction with respect to the third arm 20C. The robot body 19 is configured to be movable along the rail 22 in the direction in which the cleaning devices 11 are arranged in the cleaning device placement unit 12.

ハンド部２０Ｄには、洗浄装置１１における後述のウエハ保持装置２４(図２)と同様に、旋回流により発生する負圧の作用でウエハ１の処理面としての表面２を非接触状態で保持する非接触保持具（不図示）を備える。   The hand unit 20D holds the surface 2 as the processing surface of the wafer 1 in a non-contact state under the action of negative pressure generated by the swirling flow, as in the later-described wafer holding device 24 (FIG. 2) in the cleaning device 11. A non-contact holding tool (not shown) is provided.

従って、搬送用ロボット１５は、ウエハ給排部１４におけるウエハ搬送容器１７の開動作時に、第１アーム２０Ａ、第２アーム２０Ｂ及び第３アーム２０Ｃの作用でハンド部２０Ｄをウエハ搬送容器１７内へ挿入して、ウエハ１の表面２を非接触状態で保持し、ロボット本体１９がレール２２に沿って移動することで、ハンド部２０Ｄが保持したウエハ１を所望の洗浄装置１１のウエハ保持装置２４(図２)へ受け渡す。また、搬送用ロボット１５は、ロボット本体１９、第１アーム２０Ａ、第２アーム２０Ｂ及び第３アーム２０Ｃの動作によって、ハンド部２０Ｄが、洗浄装置１１にて洗浄及び乾燥処理されたウエハ１の表面２を非接触状態で保持して、上記洗浄装置１１のウエハ保持装置２４から受け取り、このウエハ１をウエハ給排部１４におけるウエハ搬送容器１７内へ収納する。   Therefore, the transfer robot 15 moves the hand unit 20D into the wafer transfer container 17 by the action of the first arm 20A, the second arm 20B, and the third arm 20C during the opening operation of the wafer transfer container 17 in the wafer supply / discharge unit 14. Inserting and holding the surface 2 of the wafer 1 in a non-contact state, and moving the robot body 19 along the rail 22, the wafer 1 held by the hand unit 20 </ b> D is transferred to the wafer holding device 24 of the desired cleaning device 11. Deliver to (Figure 2). Further, the transfer robot 15 has the surface of the wafer 1 on which the hand unit 20D has been cleaned and dried by the cleaning apparatus 11 by the operations of the robot body 19, the first arm 20A, the second arm 20B, and the third arm 20C. 2 is held in a non-contact state, received from the wafer holding device 24 of the cleaning device 11, and the wafer 1 is stored in the wafer transfer container 17 in the wafer supply / discharge unit 14.

また、電装部１６は、洗浄装置配置部１２の各洗浄装置１１、薬液供給部１３、ウエハ給排部１４及び搬送用ロボット１５へ電力を供給するものである。この電装部１６は、薬液供給部１３の上方に配置されることで、洗浄液等の液体が掛かることが防止される。その他、洗浄設備１０には、洗浄装置配置部１２の上方及び下方に各種の配管が設置されている。   The electrical unit 16 supplies power to the cleaning devices 11, the chemical solution supply unit 13, the wafer supply / discharge unit 14, and the transfer robot 15 of the cleaning device placement unit 12. By disposing the electrical component 16 above the chemical solution supply unit 13, it is possible to prevent a liquid such as a cleaning solution from being applied. In addition, various pipes are installed in the cleaning facility 10 above and below the cleaning device placement unit 12.

さて、洗浄装置１１は、図２〜図９及び図１３（特に図１３）に示すように、基本構造となるボックス形状の装置躯体２９において、その下部に、洗浄液、純水を貯液してウエハ１の洗浄を行う扁平ボックス形状の洗浄槽２３と、この洗浄槽２３内にウエハ１を装着するウエハ保持装置２４と、洗浄槽２３に隣接すると共にウエハ保持装置２４と反対の位置に石英板５３により区画されて併設された間接槽５２と、間接槽５２に隣接すると共に洗浄槽２３と反対の位置に設置された超音波振動装置２５と、洗浄槽２３の上方で、この洗浄槽２３に隣接して設けられた第１オーバーフロー槽２６と、洗浄槽２３の上方で洗浄槽２３に連設して設けられて、この洗浄槽２３内へ乾燥用流体を導く乾燥用流体供給槽２７とを有して構成される。   As shown in FIGS. 2 to 9 and FIG. 13 (particularly FIG. 13), the cleaning device 11 stores cleaning liquid and pure water in the lower part of a box-shaped device housing 29 that is a basic structure. A flat box-shaped cleaning tank 23 for cleaning the wafer 1, a wafer holding device 24 for mounting the wafer 1 in the cleaning tank 23, and a quartz plate adjacent to the cleaning tank 23 and at a position opposite to the wafer holding device 24. The indirect tank 52 partitioned by 53, the ultrasonic vibration device 25 adjacent to the indirect tank 52 and installed at the position opposite to the cleaning tank 23, and the cleaning tank 23 above the cleaning tank 23. A first overflow tank 26 provided adjacent to the cleaning tank 23 and a drying fluid supply tank 27 that is connected to the cleaning tank 23 above the cleaning tank 23 and guides the drying fluid into the cleaning tank 23. It is configured.

また、扁平ボックス形状の洗浄槽２３は、装置躯体２９における洗浄槽構成部２３Ａに対して、石英板５３に対向する位置に、一側壁としての正面壁２８が当接することで構成される。この正面壁２８には、ウエハ１の外形に対応する形状の開口３０が形成される。 また、正面壁２８の内面には、装置躯体２９と当接する領域にシール部材３２が配設される。   Further, the flat box-shaped cleaning tank 23 is configured such that a front wall 28 as one side wall is in contact with a cleaning tank constituting portion 23 </ b> A in the apparatus housing 29 at a position facing the quartz plate 53. An opening 30 having a shape corresponding to the outer shape of the wafer 1 is formed in the front wall 28. Further, a seal member 32 is disposed on the inner surface of the front wall 28 in a region where the device housing 29 abuts.

上記正面壁２８の上端には、図５及び図８に示すように水平プレート３３が直交して結合され、この水平プレート３３にスライダ３４が取り付けられる。また、洗浄槽２３の上方の乾燥用流体供給槽２７には、側面視Ｌ字形状のベースプレート部３５が固着され、このベースプレート部３５の水平プレート３６にレール３７が敷設される。このレール３７に上記スライダ３４が摺動自在に嵌合される。また、正面壁２８の下部には、図４及び図５に示すように貫通孔３８が形成されると共に、この貫通孔３８と同軸にブッシュ３９が固着される。また、装置躯体２９には、下部に支持シャフト４０がシャフトベース４１を介して取り付けられ、この支持シャフト４０が上記貫通孔３８及びブッシュ３９に摺動自在に挿通される。   As shown in FIGS. 5 and 8, a horizontal plate 33 is orthogonally coupled to the upper end of the front wall 28, and a slider 34 is attached to the horizontal plate 33. Further, an L-shaped base plate part 35 is fixed to the drying fluid supply tank 27 above the cleaning tank 23, and a rail 37 is laid on the horizontal plate 36 of the base plate part 35. The slider 34 is slidably fitted to the rail 37. A through hole 38 is formed in the lower portion of the front wall 28 as shown in FIGS. 4 and 5, and a bush 39 is fixed coaxially with the through hole 38. A support shaft 40 is attached to the lower part of the device housing 29 via a shaft base 41, and the support shaft 40 is slidably inserted into the through hole 38 and the bush 39.

上記ベースプレート部３５の水平プレート３６には、図２に示すように、ロッドレスタイプのスライドシリンダ４２が設置され、このスライドシリンダ４２の図示しないピストンが、上記水平プレート３６を貫通して正面壁２８の水平プレート３３に結合される。従って、このスライドシリンダ４２の作動により、レール３７及びスライダ３４と、支持シャフト４０及びブッシュ３９とに案内されて、正面壁２８は、装置躯体２９に対し開口３０の軸方向３０Ｒ（図５）に沿って、例えば７５ｍｍのストロークで移動可能に構成される。   As shown in FIG. 2, a rodless type slide cylinder 42 is installed on the horizontal plate 36 of the base plate portion 35, and a piston (not shown) of the slide cylinder 42 passes through the horizontal plate 36 and the front wall 28. Are coupled to the horizontal plate 33. Accordingly, the slide cylinder 42 is actuated to guide the rail 37 and the slider 34, the support shaft 40 and the bush 39, so that the front wall 28 is in the axial direction 30R of the opening 30 with respect to the device housing 29 (FIG. 5). For example, it is configured to be movable with a stroke of 75 mm.

図４及び図５に示すように、装置躯体２９の両側部上下にはクランプシリンダ４３が設置され、このクランプシリンダ４３のロッドにクランパ４４が取り付けられている。図７及び図８に示す正面壁２８と装置躯体２９との当接時には、上記クランプシリンダ４３が作動してクランパ４４が正面壁２８を装置躯体２９に押圧させ、正面壁２８が装置躯体２９に一体化されて洗浄槽２３が構成される。このとき、正面壁２８のシール部材３２（図７及び図１３）が装置躯体２９に密着して、正面壁２８と装置躯体２９とのシール性が良好に確保される。   As shown in FIGS. 4 and 5, clamp cylinders 43 are installed on both upper and lower sides of the apparatus housing 29, and clampers 44 are attached to the rods of the clamp cylinders 43. When the front wall 28 and the device housing 29 shown in FIGS. 7 and 8 are brought into contact with each other, the clamp cylinder 43 is actuated so that the clamper 44 presses the front wall 28 against the device housing 29, and the front wall 28 contacts the device housing 29. The cleaning tank 23 is configured as a unit. At this time, the sealing member 32 (FIG. 7 and FIG. 13) of the front wall 28 is in close contact with the device housing 29, and the sealing property between the front wall 28 and the device housing 29 is ensured satisfactorily.

前記ウエハ保持装置２４は、図４、図５及び図１２に示すように、基部４５がウエハ１の大きさに対応して円板状に構成され、円板状に構成された基部４５の端部内側には等間隔に例えば６つの非接触保持具としての凹部４７が形成される。特開２００２‐６４１３０号公報に記載の如く、凹部４７内（図４、図１０、図１２）に旋回流が形成されることで当該凹部４７に負圧が形成され、この負圧の作用で凹部４７に張り付くようにウエハ１の裏面３（ウエハ１における表面２と反対の面）が非接触状態で保持される。例えば、ウエハ１は、ウエハ保持装置２４の凹部４７との間で、約０．２５ｍｍの隙間を隔てた状態で、このウエハ保持装置２４に非接触状態で保持される。   As shown in FIGS. 4, 5, and 12, the wafer holding device 24 has a base portion 45 configured in a disc shape corresponding to the size of the wafer 1, and an end of the base portion 45 configured in a disc shape. For example, six recesses 47 as non-contact holding tools are formed at equal intervals on the inside of the part. As described in Japanese Patent Laid-Open No. 2002-64130, a swirling flow is formed in the recess 47 (FIGS. 4, 10, and 12), whereby a negative pressure is formed in the recess 47. The back surface 3 of the wafer 1 (the surface opposite to the front surface 2 in the wafer 1) is held in a non-contact state so as to stick to the recess 47. For example, the wafer 1 is held by the wafer holding device 24 in a non-contact state with a gap of about 0.25 mm from the concave portion 47 of the wafer holding device 24.

また、図１２に示すように円板状の基部４５の内側中心には、複数の孔からなる乾燥用流体供給孔４８が設けられており、該開口４８から高温の窒素ガス等の乾燥用流体をウエハ１の裏面３に供給することが可能である。さらに、図１２〜図１４に示すように、円板状の基部４５の外側には、乾燥工程時にウエハ１の裏面をもＩＰＡベーパー雰囲気下とするべく、正面壁２８と当接する板状のカバー４６が基部４５を覆うように配されており、カバー４６の内面には、正面壁２８と当接する領域にシール部材４６ａが配設される。   As shown in FIG. 12, a drying fluid supply hole 48 having a plurality of holes is provided in the center of the disk-shaped base 45, and a drying fluid such as high-temperature nitrogen gas is provided through the opening 48. Can be supplied to the back surface 3 of the wafer 1. Further, as shown in FIGS. 12 to 14, a plate-shaped cover that abuts the front wall 28 on the outside of the disk-shaped base 45 so that the back surface of the wafer 1 is also in an IPA vapor atmosphere during the drying process. 46 is disposed so as to cover the base 45, and a seal member 46 a is disposed on the inner surface of the cover 46 in a region where the front wall 28 abuts.

図２、図５及び図１２に示すように、正面壁２８の両側にはサイド板７９が設置され、このサイド板７９に取付プレート７７を介して保持装置用シリンダ７８が配置される。この保持装置用シリンダ７８のロッド先端に上記ウエハ保持装置２４が取り付けられる。図８及び図９に示すように、保持装置用シリンダ７８は、ロッドの進退動作によってウエハ保持装置２４を、正面壁２８に対し開口３０の軸方向３０Ｒに沿って相対移動可能とする。この保持装置用シリンダ７８によるウエハ保持装置２４の移動量（ストローク）はたとえば３０ｍｍである。   As shown in FIGS. 2, 5, and 12, side plates 79 are installed on both sides of the front wall 28, and holding device cylinders 78 are arranged on the side plates 79 via attachment plates 77. The wafer holding device 24 is attached to the tip of the rod of the holding device cylinder 78. As shown in FIGS. 8 and 9, the holding device cylinder 78 enables the wafer holding device 24 to move relative to the front wall 28 along the axial direction 30 </ b> R of the opening 30 by the forward and backward movement of the rod. The movement amount (stroke) of the wafer holding device 24 by the holding device cylinder 78 is, for example, 30 mm.

保持装置用シリンダ７８は、ウエハ１の搬入出時（図５）、受け渡し時（図６）、セット時または乾燥時（図８）には、ロッドの前進動作によって、ウエハ保持装置２４を正面壁２８の開口３０内に進入させて位置付ける。この場合、ウエハ保持装置２４のカバー４６は、正面壁２８に当接し、カバー４６のシール部材４６ａ（図１２〜図１４）が正面壁２８に密着して、カバー４６と正面壁２８とのシール性が良好に確保される。また、保持装置用シリンダ７８は、ウエハ１の洗浄時またはリンス時（図９）には、ロッドの後退動作によって、ウエハ保持装置２４を正面壁２８の開口３０外へ退避させる。   When the wafer 1 is loaded / unloaded (FIG. 5), delivered (FIG. 6), set, or dried (FIG. 8), the holding device cylinder 78 moves the wafer holding device 24 forward through the front wall. It enters into the opening 30 of 28, and is positioned. In this case, the cover 46 of the wafer holding device 24 abuts against the front wall 28, the seal member 46 a (FIGS. 12 to 14) of the cover 46 is in close contact with the front wall 28, and the cover 46 and the front wall 28 are sealed. Good quality is ensured. Further, the holding device cylinder 78 retracts the wafer holding device 24 out of the opening 30 of the front wall 28 by the retracting operation of the rod during cleaning or rinsing of the wafer 1 (FIG. 9).

前述のごとく、正面壁２８は装置躯体２９に対して開口３０の軸方向３０Ｒに沿って移動可能とされる。この正面壁２８が装置躯体２９から離反するウエハ１の搬入出時または受け渡し時には（図５、図６）、保持装置用シリンダ７８によってウエハ保持装置２４が正面壁２８の開口３０内に進入して位置付けられる。従って、正面壁２８が装置躯体２９から離反し、搬送用ロボット１５のハンド部２０Ｄがウエハ１の表面２を非接触状態で保持して正面壁２８と装置躯体２９との間に入ったとき、ウエハ保持装置２４が負圧の作用で、正面壁２８の外側から開口３０を通して上記ウエハ１の裏面３を非接触状態で保持して、このウエハ１はウエハ保持装置２４に受け渡しされ、洗浄装置１１の洗浄槽２３内に搬入される。このとき、ウエハ１は、縦方向に起立した状態でウエハ保持装置２４に保持される。ウエハ１が洗浄槽２３内に搬入された後に、図８、図１０及び図１３に示すように、正面壁２８が装置躯体２９に当接して洗浄槽２３が構成され、洗浄液等の貯液が可能となり、洗浄が可能となる。   As described above, the front wall 28 is movable with respect to the device housing 29 along the axial direction 30R of the opening 30. At the time of loading / unloading or delivering the wafer 1 where the front wall 28 is separated from the apparatus housing 29 (FIGS. 5 and 6), the wafer holding device 24 enters the opening 30 of the front wall 28 by the holding device cylinder 78. Positioned. Accordingly, when the front wall 28 is separated from the apparatus housing 29 and the hand portion 20D of the transfer robot 15 holds the surface 2 of the wafer 1 in a non-contact state and enters between the front wall 28 and the apparatus housing 29, The wafer holding device 24 holds the back surface 3 of the wafer 1 in a non-contact state from the outside of the front wall 28 through the opening 30 by the action of negative pressure, and the wafer 1 is transferred to the wafer holding device 24 and the cleaning device 11. Into the washing tank 23. At this time, the wafer 1 is held by the wafer holding device 24 while standing in the vertical direction. After the wafer 1 is carried into the cleaning tank 23, as shown in FIGS. 8, 10, and 13, the front wall 28 abuts on the apparatus housing 29 to form the cleaning tank 23, and a storage liquid such as cleaning liquid is stored. It becomes possible and washing becomes possible.

ところで、図７、図８及び図１１に示すように、上記正面壁２８の外面には、開口３０の周囲にざぐり面部７０が形成され、このざぐり面部７０に隙間形成部材としてのピン７１が植設されている。このピン７１は、開口３０の周囲に沿って略等間隔に複数本、例えば１２本設けられる。   7, 8, and 11, a counterbore 70 is formed around the opening 30 on the outer surface of the front wall 28, and a pin 71 as a gap forming member is planted on the counterbore 70. It is installed. A plurality of, for example, twelve pins 71 are provided at substantially equal intervals along the periphery of the opening 30.

洗浄槽２３内に搬入されたウエハ１は、縦方向に起立した状態で、ウエハ１の受け渡し時（図６）、セット時または乾燥時（図８）にウエハ保持装置２４の負圧の作用により、また、後述のウエハ１の洗浄時またはリンス時（図９）には洗浄槽２３内の洗浄液またはリンス液の圧力（水圧）により、また、後述のウエハ１の洗浄時またはリンス時であって、洗浄液またはリンス液が洗浄槽２３内から排出された場合は（後述）、正面壁２８のピン７１とウエハ１の裏面３との接触点における洗浄液等の残存液の表面張力により、その裏面３における周縁部が上記ピン７１に接触して保持される。従って、ウエハ１は、表面２が洗浄槽２３内に臨み、裏面３が洗浄槽２３外に臨むようにして洗浄槽２３に装着されると共に、図１０に示すように、上記ピン７１によってウエハ１と正面壁２８の開口３０周囲との間に環状の隙間７２を形成しつつ、この開口３０を閉塞する。   The wafer 1 carried into the cleaning tank 23 stands in the vertical direction, and is applied by the negative pressure of the wafer holding device 24 when the wafer 1 is delivered (FIG. 6), set or dried (FIG. 8). Further, when cleaning or rinsing the wafer 1 to be described later (FIG. 9), it is due to the pressure (water pressure) of the cleaning liquid or the rinsing liquid in the cleaning tank 23 and also when cleaning or rinsing the wafer 1 to be described later. When the cleaning liquid or the rinsing liquid is discharged from the cleaning tank 23 (described later), the back surface 3 of the remaining liquid such as the cleaning liquid at the contact point between the pins 71 of the front wall 28 and the back surface 3 of the wafer 1 is removed. Is held in contact with the pin 71. Therefore, the wafer 1 is mounted on the cleaning tank 23 so that the front surface 2 faces the cleaning tank 23 and the back surface 3 faces the outside of the cleaning tank 23, and as shown in FIG. The opening 30 is closed while an annular gap 72 is formed between the wall 28 and the periphery of the opening 30.

ウエハ１の洗浄時またはリンス時には、図９及び図１３に示すように、装置躯体２９の下部に設けられた洗浄液給液口４９から洗浄液またはリンス液が洗浄槽２３内へ導かれる。この洗浄液またはリンス液は、洗浄槽２３内を上方へ向かって流動し、ウエハ１の表面２を洗浄またはリンスした後、第１オーバーフロー槽２６に一時貯溜される。この第１オーバーフロー槽２６に貯溜された洗浄液またはリンス液は、この第１オーバーフロー槽２６に設けられたオーバーフロー槽排液口５０及び排液パイプ７４を経て排液槽７５に貯溜され、この排液槽７５に設けられた排液口７６から排出される。排液口７６から排出される洗浄液は、図示しないフィルタ及び循環ポンプによってろ過された後、洗浄槽２３内に戻される。   At the time of cleaning or rinsing the wafer 1, as shown in FIGS. 9 and 13, the cleaning liquid or the rinsing liquid is introduced into the cleaning tank 23 from the cleaning liquid supply port 49 provided at the lower part of the apparatus housing 29. This cleaning liquid or rinsing liquid flows upward in the cleaning tank 23, cleans or rinses the surface 2 of the wafer 1, and is temporarily stored in the first overflow tank 26. The cleaning liquid or the rinse liquid stored in the first overflow tank 26 is stored in the drain tank 75 through the overflow tank drain port 50 and the drain pipe 74 provided in the first overflow tank 26. The liquid is discharged from a drainage port 76 provided in the tank 75. The cleaning liquid discharged from the drain port 76 is returned to the cleaning tank 23 after being filtered by a filter and a circulation pump (not shown).

このウエハ１の洗浄時またはリンス時には、図１５において矢印で示すように、上記ピン７１によって形成された環状隙間７２を経て洗浄槽２３内の洗浄液またはリンス液が洗浄槽２３外へ流出し、この洗浄液またはリンス液がウエハ１の裏面３を洗浄またはリンスする。環状隙間７２を経て洗浄槽２３外へ流出しウエハ１の裏面３を洗浄またはリンスした洗浄液またはリンス液は、洗浄槽２３内の洗浄液またはリンス液の圧力（水圧）の作用で、この洗浄槽２３内へ流入することがない。このため、ウエハ１の裏面３を洗浄またはリンスした洗浄液またはリンス液によってウエハ１の表面２が転写汚染されることがない。また、洗浄液またはリンス液が環状隙間７２を経て洗浄槽２３外へ流出し、ウエハ１の裏面３を洗浄等する過程において、ウエハ１の端面も洗浄またはリンスされる。   At the time of cleaning or rinsing the wafer 1, as indicated by an arrow in FIG. 15, the cleaning liquid or the rinsing liquid in the cleaning tank 23 flows out of the cleaning tank 23 through the annular gap 72 formed by the pin 71. A cleaning liquid or a rinsing liquid cleans or rinses the back surface 3 of the wafer 1. The cleaning liquid or the rinsing liquid that flows out of the cleaning tank 23 through the annular gap 72 and cleans or rinses the back surface 3 of the wafer 1 is operated by the cleaning liquid in the cleaning tank 23 or the pressure (water pressure) of the rinsing liquid. There is no inflow. For this reason, the front surface 2 of the wafer 1 is not transferred and contaminated by the cleaning liquid or the rinse liquid for cleaning or rinsing the back surface 3 of the wafer 1. In addition, the cleaning liquid or the rinsing liquid flows out of the cleaning tank 23 through the annular gap 72, and in the process of cleaning the back surface 3 of the wafer 1, the end surface of the wafer 1 is also cleaned or rinsed.

上述のように、ウエハ１の裏面３に洗浄液などの流体が流れることから、ウエハ１の洗浄時またはリンス時には、ウエハ保持装置２４は、保持装置用シリンダ７８によって正面壁２８の開口３０から離反し(図９)、ピン７１に接触したウエハ１から退避して当該ウエハ１の保持を解除する。このとき、ウエハ１は、洗浄槽２３内に供給された洗浄液またはリンス液の圧力（水圧）によってピン７１への接触状態が維持される。   As described above, since a fluid such as a cleaning liquid flows on the back surface 3 of the wafer 1, the wafer holding device 24 is separated from the opening 30 of the front wall 28 by the holding device cylinder 78 when the wafer 1 is cleaned or rinsed. (FIG. 9), the wafer 1 is retracted from the contact with the pins 71, and the holding of the wafer 1 is released. At this time, the wafer 1 is kept in contact with the pins 71 by the pressure (water pressure) of the cleaning liquid or the rinsing liquid supplied into the cleaning tank 23.

ここで、上記ピン７１の突出長さは、図１０に示すように、正面壁２８において開口３０の上部に設置されたピン７１が下部に設置されたピン７１よりも大きく設定される。これにより、環状隙間７２の上方部分は下方部分よりも広く設定される。例えば、環状隙間７２の最上部の寸法が１．０ｍｍに、最下部の寸法が０．１ｍｍにそれぞれ設定される。環状隙間７２の下方部分が狭く設定されることで、図１３に示すウエハ１の洗浄時またはリンス時に、洗浄槽２３内に洗浄液またはリンス液が貯溜され易くなる。また、環状隙間７２の上方部分が広く設定されることで、ウエハ１の洗浄時またはリンス時に、環状隙間７２から流出する洗浄液またはリンス液によって、ウエハ１の裏面３の全面が均一に洗浄またはリンスされる。このウエハ１の裏面３の均一な洗浄またはリンスは、洗浄槽２３内を流れる洗浄液またはリンス液の流速との相乗効果で実現される。   Here, as shown in FIG. 10, the protruding length of the pin 71 is set so that the pin 71 installed at the upper part of the opening 30 in the front wall 28 is larger than the pin 71 installed at the lower part. Thereby, the upper part of the annular gap 72 is set wider than the lower part. For example, the uppermost dimension of the annular gap 72 is set to 1.0 mm, and the lowermost dimension is set to 0.1 mm. By setting the lower portion of the annular gap 72 narrow, the cleaning liquid or the rinsing liquid is easily stored in the cleaning tank 23 when the wafer 1 shown in FIG. 13 is cleaned or rinsed. Further, since the upper portion of the annular gap 72 is set wide, the entire back surface 3 of the wafer 1 is uniformly cleaned or rinsed by the cleaning liquid or the rinsing liquid flowing out from the annular gap 72 when the wafer 1 is cleaned or rinsed. Is done. The uniform cleaning or rinsing of the back surface 3 of the wafer 1 is realized by a synergistic effect with the flow rate of the cleaning liquid or the rinsing liquid flowing in the cleaning tank 23.

尚、上記実施の形態では、図１０及び図１１に示すように、ピン７１が植設されるざぐり面部７０が鉛直面に平行なものを述べたが、このざぐり面部７０が上方部分ほど深く削り込まれて、鉛直面に対し傾斜して形成されてもよい。このようなざぐり面部７０に、突出長さが上述の如く異なる複数のピン７１を植設した場合には、これらのピン７１に接触するウエハ１を鉛直面に平行に配置することが可能となる。ウエハ１を鉛直面に平行に配置することにより、間接槽５２の背面に装着される超音波振動子５１とウエハ１とを容易に平行状態とすることが可能となり、ウエハ１と超音波振動子５１との間で、何れの部分においても距離が完全に一致することにより超音波洗浄による洗浄むらの発生を容易に防止することが可能となる。   In the above embodiment, as shown in FIG. 10 and FIG. 11, the spot face portion 70 where the pin 71 is implanted is parallel to the vertical plane, but the spot face portion 70 is shaved deeper in the upper part. It may be formed to be inclined with respect to the vertical plane. When a plurality of pins 71 having different projecting lengths as described above are implanted in such a counterbore surface portion 70, the wafer 1 in contact with these pins 71 can be arranged in parallel to the vertical surface. . By disposing the wafer 1 parallel to the vertical plane, the ultrasonic vibrator 51 mounted on the back surface of the indirect tank 52 and the wafer 1 can be easily brought into a parallel state. It is possible to easily prevent the occurrence of cleaning unevenness due to the ultrasonic cleaning because the distance completely matches with any part 51.

更に、正面壁２８の外面には、開口３０の周囲の下部に受け部材７３が設置される。この受け部材７３は、開口３０に沿って複数個、例えば４個設けられる。この受け部材７３がウエハ１を支持する上部は先細り形状に形成されて、ウエハ１の周縁を点接触状態で支持し、ウエハ１への汚染等が抑制される。また、受け部材７３の下部も先細り形状に形成されて、良好な液切れが実現される。   Further, a receiving member 73 is installed on the outer surface of the front wall 28 at the lower part around the opening 30. A plurality of, for example, four receiving members 73 are provided along the opening 30. The upper part where the receiving member 73 supports the wafer 1 is formed in a tapered shape, and the periphery of the wafer 1 is supported in a point contact state, so that contamination or the like on the wafer 1 is suppressed. Moreover, the lower part of the receiving member 73 is also formed in a taper shape, and favorable liquid cutting | disconnection is implement | achieved.

また、正面壁２８の外面には、図７、図９及び図１３に示すように、開口３０周囲の下部に第２オーバーフロー槽８０が設置される。この第２オーバーフロー槽８０は、環状隙間７２から流出してウエハ１の裏面３を洗浄またはリンスした洗浄液またはリンス液を受け取って集め一時貯溜するものである。この第２オーバーフロー槽８０に集められた洗浄液またはリンス液は、排液パイプ８１を経て排液槽７５へ導かれ、第１オーバーフロー槽２６からの洗浄液またはリンス液と共に、排液槽７５の排液口７６から排出される。第２オーバーフロー槽８０から排液槽７５へ導かれた洗浄液も、第１オーバーフロー槽２６から排液槽７５へ導かれた洗浄液と共に、前述の如く、図示しないフィルタ及び循環ポンプによってろ過されて、洗浄槽２３内へ戻される。   Further, as shown in FIGS. 7, 9, and 13, a second overflow tank 80 is installed on the outer surface of the front wall 28 at the lower part around the opening 30. The second overflow tank 80 receives and collects and temporarily stores a cleaning liquid or a rinsing liquid that flows out of the annular gap 72 and cleans or rinses the back surface 3 of the wafer 1. The cleaning liquid or the rinse liquid collected in the second overflow tank 80 is guided to the drain tank 75 through the drain pipe 81 and discharged together with the cleaning liquid or the rinse liquid from the first overflow tank 26 in the drain tank 75. It is discharged from the mouth 76. The cleaning liquid guided from the second overflow tank 80 to the drain tank 75 is also filtered by the filter and circulation pump (not shown) together with the cleaning liquid guided from the first overflow tank 26 to the drain tank 75 as described above. It returns to the tank 23.

上記洗浄槽２３は、後述の如く石英板５３によって間接槽５２と区画されるが、この洗浄槽２３内におけるウエハ１と石英板５３との間の寸法Ｌ１(図１３)は、洗浄槽給液口４９が設けられた洗浄槽２３の下部の寸法Ｌ２や、第１オーバーフロー槽２６に連設する洗浄槽２３の上部の寸法Ｌ３よりも狭く設定される。これにより、洗浄槽２３の中央部を流動する洗浄液またはリンス液の流速が上がり、洗浄槽２３に配設されたウエハ１の表面２の洗浄効率またはリンス効率の向上が図られると共に、環状隙間７２から流出する洗浄液またはリンス液によるウエハ１の裏面３全面の均一な洗浄またはリンスが実現される。例えば、上記寸法Ｌ１は約５ｍｍに、上記寸法Ｌ２及びＬ３は約３５ｍｍにそれぞれ設定される。   The cleaning tank 23 is partitioned from the indirect tank 52 by a quartz plate 53 as will be described later. The dimension L1 (FIG. 13) between the wafer 1 and the quartz plate 53 in the cleaning tank 23 is a cleaning tank supply liquid. It is set narrower than the dimension L2 of the lower part of the cleaning tank 23 provided with the opening 49 and the dimension L3 of the upper part of the cleaning tank 23 connected to the first overflow tank 26. As a result, the flow rate of the cleaning liquid or the rinsing liquid flowing through the central portion of the cleaning tank 23 is increased, and the cleaning efficiency or the rinsing efficiency of the surface 2 of the wafer 1 disposed in the cleaning tank 23 is improved, and the annular gap 72 is provided. A uniform cleaning or rinsing of the entire back surface 3 of the wafer 1 with a cleaning liquid or a rinsing liquid flowing out from the substrate is realized. For example, the dimension L1 is set to about 5 mm, and the dimensions L2 and L3 are set to about 35 mm.

図３、図９及び図１３に示すように、前記超音波振動装置２５は、超音波振動子５１、間接槽５２、石英板５３及び図示しない高周波発振器を有して構成される。前述の如く間接槽５２は、石英板５３を介して洗浄槽２３に隣接し、超音波伝達媒体としての純水を満たす。間接槽５２には、下部に間接槽給排液口５４が、上部に間接槽オーバーフロー口５５がそれぞれ形成され、間接槽給排液口５４から新鮮な純水が間接槽５２内へ導入され、この間接槽５２内の純水が間接槽オーバーフロー口５５を経て排水されたことを確認して超音波振動装置２５が作動する。   As shown in FIGS. 3, 9, and 13, the ultrasonic vibration device 25 includes an ultrasonic vibrator 51, an indirect tank 52, a quartz plate 53, and a high-frequency oscillator (not shown). As described above, the indirect tank 52 is adjacent to the cleaning tank 23 via the quartz plate 53 and is filled with pure water as an ultrasonic transmission medium. In the indirect tank 52, an indirect tank supply / drain port 54 is formed in the lower part, and an indirect tank overflow port 55 is formed in the upper part, and fresh pure water is introduced into the indirect tank 52 from the indirect tank supply / drain port 54, After confirming that the pure water in the indirect tank 52 has been drained through the indirect tank overflow port 55, the ultrasonic vibration device 25 operates.

上記超音波振動子５１は間接槽５２の背面に装着され、この超音波振動子５１と石英板５３とは、洗浄槽２３に装着されたウエハ１に対向して略平行に配置される。上記高周波発振器からの高周波信号が超音波振動子５１へ送信されることによって、この超音波振動子５１が超音波振動し、この超音波振動が間接槽５２内の純水及び石英板５３を経て、洗浄槽２３内の洗浄液またはリンス液へ至り、ウエハ１の表面２を超音波洗浄またはリンスする。更に、洗浄槽２３内へ至った超音波振動は、ウエハ１を経て、このウエハ１の裏面３を流れる洗浄液またはリンス液へ伝播され、ウエハ１の裏面３を超音波洗浄またはリンスすることが可能であり、ウエハ１の表面２及び裏面３のそれぞれの全面を均一に洗浄またはリンス可能となっている。この超音波の作用により、アルカリ洗浄液によるウエハ１の洗浄効率、及びこのアルカリ洗浄後のリンス液（純水）によるリンス効率が向上する。   The ultrasonic vibrator 51 is mounted on the back surface of the indirect tank 52, and the ultrasonic vibrator 51 and the quartz plate 53 are disposed substantially parallel to the wafer 1 mounted on the cleaning tank 23. By transmitting a high-frequency signal from the high-frequency oscillator to the ultrasonic transducer 51, the ultrasonic transducer 51 vibrates ultrasonically, and this ultrasonic vibration passes through pure water in the indirect tank 52 and the quartz plate 53. Then, the cleaning liquid or the rinsing liquid in the cleaning tank 23 is reached, and the surface 2 of the wafer 1 is ultrasonically cleaned or rinsed. Further, the ultrasonic vibration that has reached the cleaning tank 23 is propagated through the wafer 1 to the cleaning liquid or the rinsing liquid flowing on the back surface 3 of the wafer 1, so that the back surface 3 of the wafer 1 can be ultrasonically cleaned or rinsed. Thus, the entire front surface 2 and back surface 3 of the wafer 1 can be uniformly cleaned or rinsed. By the action of this ultrasonic wave, the cleaning efficiency of the wafer 1 with the alkaline cleaning liquid and the rinsing efficiency with the rinse liquid (pure water) after the alkaline cleaning are improved.

図３、図７及び図８に示すように、前記乾燥用流体供給槽２７は、洗浄槽２３内に流体を供給するべく、複数個の２流体ノズル５６、純水ノズル５７及びガス供給部５８を有して構成され、上記２流体ノズル５６は、圧搾空気の高速の流れを利用して液体を微粒化するノズルであって、有機溶剤供給口５９及び不活性ガス供給口６０が接続される。また、図３に示すように、有機溶剤供給口５９には、有機溶剤を供給するためのパイプ５９ａが接続される。パイプ５９ａは、アースに接続され、かつ、水や、高純度薬液に対して金属イオンの溶出を抑えたＳＵＳ配管によって構成され、該パイプ５９ａには、面状発熱体としてのラバーヒーター５９ｂが巻き付けられている。   As shown in FIGS. 3, 7, and 8, the drying fluid supply tank 27 has a plurality of two-fluid nozzles 56, a pure water nozzle 57, and a gas supply unit 58 so as to supply fluid into the cleaning tank 23. The two-fluid nozzle 56 is a nozzle for atomizing a liquid using a high-speed flow of compressed air, and the organic solvent supply port 59 and the inert gas supply port 60 are connected to each other. . As shown in FIG. 3, a pipe 59 a for supplying an organic solvent is connected to the organic solvent supply port 59. The pipe 59a is constituted by a SUS pipe which is connected to the ground and suppresses elution of metal ions with respect to water or high-purity chemical liquid. A rubber heater 59b as a planar heating element is wound around the pipe 59a. It has been.

有機溶剤供給口５９を経て２流体ノズル５６へ供給される有機溶剤は、水溶性で且つウエハ１に対する純水の表面張力を低下させて、乾燥を促進しうるアルコール類、ケトン類またはエーテル類から選択され、本実施の形態ではＩＰＡ(Ｉｓｏ−ｐｒｏｐｙｌ ａｌｃｏｈｏｌ)が用いられ、上記ラバーヒーター５９ｂにより、例えば４０℃に加熱されて、２流体ノズル５６へと至る。また、不活性ガス供給口６０を経て２流体ノズル５６へ供給される不活性ガスは、有機溶剤であるＩＰＡと同時に供給されて安全性を確保するものであり、本実施の形態では窒素ガス（Ｎ２）が用いられ、予めヒーター（図示せず）により、例えば１５０℃に加熱されて、２流体ノズル５６へ供給される。２流体ノズル５６へ高温のＩＰＡと窒素ガスが供給されることで、この２流体ノズル５６がＩＰＡミストを生成する。尚、上記有機溶剤の加熱は、上記ラバーヒーター５９ｂによることのみならず、例えば、予めヒーターで加熱された不活性ガスのタンク内に、有機溶剤供給口５９に接続されるパイプ５９ａを挿通して、既に加熱された不活性ガスの熱を利用することによって有機溶剤の加熱を行うことも可能である。   The organic solvent supplied to the two-fluid nozzle 56 via the organic solvent supply port 59 is water-soluble and reduces the surface tension of pure water with respect to the wafer 1 so as to accelerate the drying, from alcohols, ketones or ethers. In this embodiment, IPA (Iso-propyl alcohol) is used, and the rubber heater 59 b is heated to, for example, 40 ° C. to reach the two-fluid nozzle 56. In addition, the inert gas supplied to the two-fluid nozzle 56 through the inert gas supply port 60 is supplied simultaneously with IPA, which is an organic solvent, to ensure safety. In the present embodiment, nitrogen gas ( N2) is used, and is heated in advance to, for example, 150 ° C. by a heater (not shown) and supplied to the two-fluid nozzle 56. When the high-temperature IPA and nitrogen gas are supplied to the two-fluid nozzle 56, the two-fluid nozzle 56 generates an IPA mist. The heating of the organic solvent is not only performed by the rubber heater 59b, but, for example, a pipe 59a connected to the organic solvent supply port 59 is inserted into an inert gas tank previously heated by the heater. It is also possible to heat the organic solvent by using the heat of the already heated inert gas.

２流体ノズル５６で生成されたＩＰＡミストは、流体自体が高温に維持されているため、ノズルからの噴射とほぼ同時にミストから蒸気へと気化してＩＰＡベーパーとなり、ＩＰＡベーパーが、洗浄槽２３内へ導かれる。洗浄槽２３内で洗浄されリンスされたウエハ１へ上記ＩＰＡベーパーが導かれることで、ウエハ１の表面２に付着した水分が、蒸発しやすいＩＰＡベーパー雰囲気下となり、このウエハ１の表面２の乾燥が促進される。このＩＰＡベーパーは、リンス液としての純水が洗浄槽２３内から排水された後に、この洗浄槽２３内へ導入される。   Since the IPA mist generated by the two-fluid nozzle 56 is maintained at a high temperature, the IPA vapor is vaporized from the mist to steam almost simultaneously with the injection from the nozzle to become IPA vapor. Led to. When the IPA vapor is guided to the wafer 1 cleaned and rinsed in the cleaning tank 23, the moisture attached to the surface 2 of the wafer 1 is in an IPA vapor atmosphere in which the wafer 1 is easily evaporated, and the surface 2 of the wafer 1 is dried. Is promoted. The IPA vapor is introduced into the cleaning tank 23 after pure water as a rinsing liquid is drained from the cleaning tank 23.

前記ガス供給部５８は、図示しないヒーターのｏｎ又はｏｆｆにより常温又は高温の窒素ガス（Ｎ２）を洗浄槽２３内に供給するものである。ウエハ１が疎水性である場合に、２流体ノズル５６にてＩＰＡベーパーを生成する前に常温の窒素ガス（前記ヒーターｏｆｆ）を噴射して、洗浄槽２３内で洗浄されリンスされた上記疎水性のウエハ１を常温の窒素ガスの雰囲気下とする。また、上述の常温の窒素ガスは、リンス液としての純水が洗浄槽２３内から排水される過程で、この排水と同時に洗浄槽２３内へ噴射される。   The gas supply unit 58 supplies normal or high-temperature nitrogen gas (N2) into the cleaning tank 23 by turning on or off a heater (not shown). In the case where the wafer 1 is hydrophobic, before the IPA vapor is generated by the two-fluid nozzle 56, nitrogen gas at room temperature (the heater off) is sprayed, and the hydrophobicity is cleaned and rinsed in the cleaning tank 23. The wafer 1 is placed in a nitrogen gas atmosphere at room temperature. Further, the above-described nitrogen gas at normal temperature is injected into the cleaning tank 23 simultaneously with the drainage in the process in which pure water as the rinse liquid is drained from the cleaning tank 23.

また、ウエハ１の乾燥は、上述したガス供給部５８より、前記ヒーター（図示せず）により加熱された高温の不活性ガス、本実施の形態では高温の窒素ガス（ＨＯＴ Ｎ２）が洗浄槽２３内のＩＰＡベーパー雰囲気下のウエハ１の表面２へ供給されることにより、急速に達成される。ガス供給部５８から洗浄槽２３内へ高温の窒素ガスが導かれる際には、洗浄槽２３の下部に設けられたガス排気口６２(図７、図１３)から余剰の窒素ガスが排気される。   In addition, the wafer 1 is dried by the high temperature inert gas heated by the heater (not shown) from the gas supply unit 58 described above, in this embodiment, the high temperature nitrogen gas (HOT N2). This is achieved rapidly by being supplied to the surface 2 of the wafer 1 under the IPA vapor atmosphere. When high-temperature nitrogen gas is introduced from the gas supply unit 58 into the cleaning tank 23, excess nitrogen gas is exhausted from the gas exhaust port 62 (FIG. 7, FIG. 13) provided in the lower part of the cleaning tank 23. .

尚、図７、図８及び図１３中の符号６４は、洗浄槽２３内へ洗浄液が供給されて、この洗浄槽２３内のウエハ１を洗浄する際、または洗浄槽２３内へリンス液（純水）が供給されて、この洗浄槽２３内のウエハ１がリンスされる際に、この洗浄槽２３内の不要なガスを排気するためのガス排気口である。また、符号６５は、洗浄槽２３内の洗浄液、リンス液（純水）を排液する排液口である。   7, 8, and 13, reference numeral 64 denotes a rinsing liquid (pure water) when the cleaning liquid is supplied into the cleaning tank 23 and the wafer 1 in the cleaning tank 23 is cleaned or into the cleaning tank 23. This is a gas exhaust port for exhausting unnecessary gas in the cleaning tank 23 when the water 1 is supplied and the wafer 1 in the cleaning tank 23 is rinsed. Reference numeral 65 denotes a drain outlet for draining the cleaning liquid and rinse liquid (pure water) in the cleaning tank 23.

また、図３、図４、図７及び図１３中の符号５７は純水を供給するノズル（純水ノズル）であって、乾燥工程において、高温の乾燥用流体により熱を帯びた洗浄槽２３の温度の一定化（冷却）及び槽内の洗浄を行うべく、純水（ＤＩＷ）を装置躯体２９の内側表面に供給するためのものである。純水ノズル５７は、洗浄装置１１の正面壁２８が装置躯体２９から離反している状態で純水を洗浄槽２３へと供給するものであり、洗浄槽２３内に純水を貯留せずに冷却・洗浄を行う必要があるため、純水を装置躯体２９の内側及び石英板５３の表面に沿って流れるように供給し、洗浄槽２３内の冷却及び洗浄を行う。そのため、純水ノズル５７は、図３、図５及び図１３に示すように、その供給口が装置躯体２９の内側表面に接するよう取り付けられている。洗浄槽２３内に供給された純水は、排液口６５を経て排液される。   3, 4, 7, and 13 is a nozzle for supplying pure water (pure water nozzle). In the drying process, the cleaning tank 23 is heated by a high-temperature drying fluid. This is for supplying pure water (DIW) to the inner surface of the device housing 29 in order to make the temperature constant (cooling) and clean the inside of the tank. The pure water nozzle 57 supplies pure water to the cleaning tank 23 in a state where the front wall 28 of the cleaning apparatus 11 is separated from the apparatus housing 29, and does not store pure water in the cleaning tank 23. Since it is necessary to perform cooling and cleaning, pure water is supplied so as to flow along the inside of the apparatus housing 29 and the surface of the quartz plate 53, and the cleaning tank 23 is cooled and cleaned. Therefore, as shown in FIGS. 3, 5, and 13, the pure water nozzle 57 is attached so that its supply port contacts the inner surface of the device housing 29. The pure water supplied into the cleaning tank 23 is drained through the drain port 65.

また、図３乃至図９中の符号８５、８６は、洗浄槽２３内の液面を検出する液面検出センサー８９（図７にのみ図示）が配されたパイプ８７（図７にのみ図示）へと繋がる接続口である。接続口８５は、洗浄槽２３側面であって、第１オーバーフロー槽２６に対応する位置に設けられており、接続口８６は、洗浄槽２３側面であって、洗浄給液口４９の下方、即ち、洗浄槽２３の最下部に設けられている。液面検出センサー８９は、静電容量近接センサー等のパイプ８７内の液体の有無を確認しうる手段によって構成され、継手８７ａ（図７にのみ図示）によって接続口８５、８６に連結された鉛直方向に配されるパイプ８７に取り付けられるものである。詳しくはウエハ保持装置２４が備える最も下方に配された凹部４７の下端に対応する位置に取り付けられる。これによって、リンス終了後、リンス液を排液して乾燥工程に移行する場合、リンス液の液面が、ウエハ保持装置２４の最も下方の凹部４７の下端より下がったことを液面検出センサー８９により確認してウエハ保持装置２４を正面壁２８の開口３０内へと進入させて、ウエハ１の裏面３を保持することが可能であり、排液時に環状隙間７２を経て洗浄槽２３外へ流出するリンス液が、凹部４７の先端内側に形成された凹部４７に浸入することを防止することが可能である。   Further, reference numerals 85 and 86 in FIGS. 3 to 9 denote pipes 87 (shown only in FIG. 7) provided with a liquid level detection sensor 89 (shown only in FIG. 7) for detecting the liquid level in the cleaning tank 23. It is a connection port that leads to The connection port 85 is provided on the side surface of the cleaning tank 23 and at a position corresponding to the first overflow tank 26, and the connection port 86 is a side surface of the cleaning tank 23 and below the cleaning liquid supply port 49, that is, , Provided at the lowermost part of the cleaning tank 23. The liquid level detection sensor 89 is configured by means capable of confirming the presence or absence of liquid in the pipe 87 such as a capacitance proximity sensor, and is vertically connected to the connection ports 85 and 86 by a joint 87a (shown only in FIG. 7). It is attached to the pipe 87 arranged in the direction. Specifically, the wafer holding device 24 is attached to a position corresponding to the lower end of the lowermost concave portion 47 provided. Accordingly, when the rinse liquid is drained and the process proceeds to the drying process after the rinse is completed, the liquid level detection sensor 89 indicates that the liquid level of the rinse liquid has fallen below the lower end of the lowermost recess 47 of the wafer holding device 24. The wafer holding device 24 can be moved into the opening 30 of the front wall 28 after confirmation, and the back surface 3 of the wafer 1 can be held and flows out of the cleaning tank 23 through the annular gap 72 when draining. It is possible to prevent the rinsing liquid to enter the recess 47 formed inside the front end of the recess 47.

次に、上述の洗浄装置１１の作用を、図１６及び図１７を用いて説明する。   Next, the operation of the above-described cleaning apparatus 11 will be described with reference to FIGS. 16 and 17.

洗浄装置１１は、搬送用ロボット１５によりウエハ１を洗浄槽２３内へ搬入し、このウエハ１の表面２を洗浄槽２３内に、ウエハ１の裏面３を洗浄槽２３外に臨ませ、ウエハ１と正面壁２８との間に環状隙間７２を設けて、このウエハ１を洗浄槽２３に装着するウエハ１の搬入工程（Ｓ１〜Ｓ５）と、洗浄槽２３内で洗浄液を流動させ、この洗浄液に接液するウエハ１の表面２を洗浄しリンスすると共に、洗浄槽２３内の洗浄液またはリンス液の圧力（水圧）の作用で上記環状隙間７２から流出する洗浄液またはリンス液により、ウエハ１の裏面３をリンスする洗浄・リンス工程（Ｓ６〜Ｓ２２）と、この洗浄・リンス工程の終了後に、ウエハ１を洗浄槽２３内に装着した状態でＩＰＡベーパー、純水ミスト、高温窒素ガスを洗浄槽２３内へ導き、上記ウエハ１を乾燥する乾燥工程（Ｓ２３〜Ｓ２７）と、上記洗浄、リンス及び乾燥処理されたウエハ１を、搬送用ロボット１５により洗浄槽２３外へ搬出するウエハ１の搬出工程（Ｓ２８〜Ｓ３１）とを有する。これらの各工程を更に詳説する。   The cleaning apparatus 11 carries the wafer 1 into the cleaning tank 23 by the transfer robot 15, and places the front surface 2 of the wafer 1 into the cleaning tank 23 and the back surface 3 of the wafer 1 outside the cleaning tank 23. An annular gap 72 is provided between the front wall 28 and the wafer 1 loading process (S1 to S5) for mounting the wafer 1 on the cleaning tank 23, and the cleaning liquid is caused to flow in the cleaning tank 23. The front surface 2 of the wafer 1 in contact with the liquid is cleaned and rinsed, and the back surface 3 of the wafer 1 is washed by the cleaning liquid or the rinsing liquid flowing out from the annular gap 72 by the action of the cleaning liquid in the cleaning tank 23 or the pressure of the rinsing liquid (water pressure). After the cleaning and rinsing process (S6 to S22) for rinsing the wafer 1 and the completion of the cleaning and rinsing process, the IPA vapor, pure water mist, and high-temperature nitrogen gas are introduced into the cleaning tank 23 with the wafer 1 mounted in the cleaning tank 23. What Then, a drying step (S23 to S27) for drying the wafer 1 and a wafer 1 unloading step (S28 to S28) for carrying out the cleaning, rinsing and drying processing of the wafer 1 to the outside of the cleaning tank 23 by the transfer robot 15. S31). Each of these steps will be described in further detail.

ウエハ１の搬入工程では、図１に示すように、まず、洗浄設備１０におけるウエハ給排部１４のウエハ搬送容器（所謂フープ）１７が容器オープナーによって開けられ（Ｓ１）、搬送用ロボット１５のハンド部２０Ｄがウエハ搬送容器１７内のウエハ１の表面２を非接触状態で保持する（Ｓ２）。そして、後述するステップ２９において純水ノズル５７より洗浄槽２３内に供給されている純水の供給が停止される（Ｓ３）。即ち、現在処理されているウエハ１の１つ前に処理されたウエハの乾燥工程において、高温の乾燥用流体により熱を帯びた洗浄槽２３内の温度の一定化（冷却）及び槽内の洗浄を行うべく、純水ノズル５７より、純水が、装置躯体２９及び石英板５３の表面に供給されているが、ウエハ１が洗浄槽２３内に装着されるのに備え、純水の供給が停止される。   In the wafer 1 loading step, as shown in FIG. 1, first, a wafer transfer container (so-called hoop) 17 of the wafer supply / discharge section 14 in the cleaning facility 10 is opened by a container opener (S 1). The unit 20D holds the surface 2 of the wafer 1 in the wafer transfer container 17 in a non-contact state (S2). In step 29, which will be described later, the supply of pure water supplied from the pure water nozzle 57 into the cleaning tank 23 is stopped (S3). That is, in the drying process of the wafer processed immediately before the currently processed wafer 1, the temperature in the cleaning bath 23 heated by the high-temperature drying fluid is made constant (cooling) and the cleaning in the bath is performed. The pure water is supplied from the pure water nozzle 57 to the surfaces of the apparatus housing 29 and the quartz plate 53, but the pure water is supplied in preparation for mounting the wafer 1 in the cleaning tank 23. Stopped.

次に、図４乃至図６に示すように、洗浄装置配置部１２における洗浄装置１１の正面壁２８が装置躯体２９から離反し、正面壁２８の開口３０内に進入して位置付けられたウエハ保持装置２４が、搬送用ロボット１５のハンド部２０Ｄに保持されたウエハ１の裏面３を非接触状態で保持して、搬送用ロボット１５からウエハ１を受け取る（Ｓ４）。この状態では、ウエハ１が正面壁２８のピン７１に接触して、ウエハ１と正面壁２８の開口３０周囲との間に環状隙間７２が形成され、図７及び図８に示すように、引き続き正面壁２８が装置躯体２９に当接して洗浄槽２３が構成されると同時に、ウエハ１が洗浄槽２３内に装着される（Ｓ５）。   Next, as shown in FIGS. 4 to 6, the front wall 28 of the cleaning device 11 in the cleaning device placement section 12 is separated from the device housing 29 and enters the opening 30 of the front wall 28 to hold the wafer. The apparatus 24 holds the back surface 3 of the wafer 1 held by the hand unit 20D of the transfer robot 15 in a non-contact state and receives the wafer 1 from the transfer robot 15 (S4). In this state, the wafer 1 comes into contact with the pins 71 of the front wall 28, and an annular gap 72 is formed between the wafer 1 and the periphery of the opening 30 of the front wall 28. As shown in FIGS. At the same time that the front wall 28 contacts the apparatus housing 29 to form the cleaning tank 23, the wafer 1 is mounted in the cleaning tank 23 (S5).

洗浄・リンス工程では、図９及び図１３に示すように、洗浄槽給液口４９からアルカリ洗浄液が洗浄槽２３内へ供給されると共に（Ｓ６）、間接槽５２内へ間接槽給排液口５４から純水が供給される（Ｓ７）。このアルカリ洗浄液の供給開始時に、保持装置用シリンダ７８の後退動作によってウエハ保持装置２４が正面壁２８の開口３０外へ退避されて、ウエハ１の裏面３が洗浄槽２３内のアルカリ洗浄液の圧力（水圧）によりピン７１に接触して保持され(Ｓ８)、更にこのウエハ１が受け部材７３に支持されると共に、ガス排気口６４が開操作される。   In the cleaning / rinsing step, as shown in FIGS. 9 and 13, the alkaline cleaning liquid is supplied from the cleaning tank liquid supply port 49 into the cleaning tank 23 (S6), and the indirect tank supply / drainage liquid port is supplied into the indirect tank 52. Pure water is supplied from 54 (S7). At the start of supplying the alkaline cleaning liquid, the wafer holding device 24 is retracted out of the opening 30 of the front wall 28 by the retreating operation of the holding device cylinder 78, and the back surface 3 of the wafer 1 is pressurized with the alkaline cleaning liquid in the cleaning tank 23 ( The wafer 1 is held in contact with the pin 71 by the water pressure (S8), the wafer 1 is supported by the receiving member 73, and the gas exhaust port 64 is opened.

洗浄槽２３内で洗浄液給液口４９から第１オーバーフロー槽２６へ向かってアルカリ洗浄液が流動し、このアルカリ洗浄液の一部が環状隙間７２から洗浄槽２３外へ流出し、第２オーバーフロー槽８０を経て排液槽７５に至り、洗浄槽２３内のアルカリ洗浄液の大部分が第１オーバーフロー槽２６を経て排液槽７５へ至る。この排液槽７５内のアルカリ洗浄液は、ろ過され洗浄槽給液口４９を経て洗浄槽２３内へ戻り循環する。この間に、間接槽５２内で間接槽給排液口５４から間接槽オーバーフロー口５５へ向かって新鮮な純水が流動する。純水が間接槽５２内を流れる間に超音波振動装置２５が作動して、この超音波及びアルカリ洗浄液によりウエハ１の表面２及び裏面３を洗浄する（Ｓ９）。この場合、アルカリ洗浄液が環状隙間７２を経て洗浄槽２３外へ流出し、ウエハ１の裏面３を洗浄する過程において、ウエハ１の端面も洗浄される。   In the cleaning tank 23, the alkaline cleaning liquid flows from the cleaning liquid supply port 49 toward the first overflow tank 26, and a part of this alkaline cleaning liquid flows out of the cleaning tank 23 from the annular gap 72, and passes through the second overflow tank 80. Then, it reaches the drainage tank 75, and most of the alkaline cleaning liquid in the cleaning tank 23 reaches the drainage tank 75 through the first overflow tank 26. The alkaline cleaning liquid in the drainage tank 75 is filtered, returns to the cleaning tank 23 through the cleaning tank supply port 49, and circulates. During this time, fresh pure water flows in the indirect tank 52 from the indirect tank supply / drainage port 54 toward the indirect tank overflow port 55. While the pure water flows in the indirect tank 52, the ultrasonic vibration device 25 is operated, and the front surface 2 and the back surface 3 of the wafer 1 are cleaned with the ultrasonic waves and the alkaline cleaning liquid (S9). In this case, the alkali cleaning liquid flows out of the cleaning tank 23 through the annular gap 72, and in the process of cleaning the back surface 3 of the wafer 1, the end surface of the wafer 1 is also cleaned.

このアルカリ洗浄終了後、洗浄槽２３内のアルカリ洗浄液を排液口６５を経て排液し、超音波振動装置２５を停止し（Ｓ１０）、洗浄槽２３からアルカリ洗浄液が排液される。この場合、洗浄槽２３内の洗浄液が排出され、貯液されていないものの、正面壁２８のピン７１とウエハ１の裏面３との接触点に洗浄液が残ることにより、その表面張力により、ウエハ１の裏面３における周縁部が上記ピン７１に接触して縦方向に起立した状態のまま保持される。アルカリ洗浄液の排液後、洗浄槽給液口４９を経て洗浄槽２３内にリンス液としての純水（ＤＩＷ）を導く（Ｓ１１）。ウエハ１の裏面３がリンス液の圧力（水圧）によりピン７１に接触して保持され、更にこのウエハ１が受け部材７３に支持される。   After completion of the alkali cleaning, the alkaline cleaning liquid in the cleaning tank 23 is discharged through the drain port 65, the ultrasonic vibration device 25 is stopped (S10), and the alkaline cleaning liquid is discharged from the cleaning tank 23. In this case, although the cleaning liquid in the cleaning tank 23 is discharged and not stored, the cleaning liquid remains at the contact point between the pins 71 of the front wall 28 and the back surface 3 of the wafer 1, so that the surface tension of the wafer 1 The peripheral edge portion of the back surface 3 is kept in contact with the pin 71 and standing upright in the vertical direction. After draining the alkaline cleaning liquid, pure water (DIW) as a rinsing liquid is introduced into the cleaning tank 23 through the cleaning tank supply port 49 (S11). The back surface 3 of the wafer 1 is held in contact with the pins 71 by the pressure of the rinsing liquid (water pressure), and the wafer 1 is further supported by the receiving member 73.

このリンス液が洗浄槽２３内で洗浄槽給液口４９から第１オーバーフロー槽２６に向かって流動し、環状隙間７２から流出する間に超音波振動装置２５を作動して、ウエハ１の表面２及び裏面３をリンス液によりリンスする（Ｓ１２）。このリンス時に、第１オーバーフロー槽２６及び第２オーバーフロー槽８０から排液槽７５を経て排水されたリンス液は廃棄されて、洗浄槽２３内には洗浄槽給液口４９から新鮮なリンス液（純水）が供給される。   While this rinse liquid flows in the cleaning tank 23 from the cleaning tank liquid supply port 49 toward the first overflow tank 26 and flows out from the annular gap 72, the ultrasonic vibration device 25 is operated to operate the surface 2 of the wafer 1. And the back surface 3 is rinsed with a rinse solution (S12). During the rinsing, the rinse liquid drained from the first overflow tank 26 and the second overflow tank 80 through the drain tank 75 is discarded, and a fresh rinse liquid ( Pure water) is supplied.

上記リンス終了後に、超音波振動装置２５を停止し、洗浄槽２３内から排液口６５を経てリンス液を排液する（Ｓ１３）。この場合、正面壁２８のピン７１とウエハ１の裏面３との接触点にリンス液が残ることにより、その表面張力により、ウエハ１の裏面３における周縁部が上記ピン７１に接触して縦方向に起立した状態のまま保持される。超音波振動装置２５の停止と同時に間接槽５２内への純水の供給が停止され（Ｓ１４）、間接槽５２内の純水が間接槽給排液口５４を経て排液される（Ｓ１５）。   After completion of the rinsing, the ultrasonic vibration device 25 is stopped, and the rinse liquid is drained from the cleaning tank 23 through the drain port 65 (S13). In this case, the rinsing liquid remains at the contact point between the pins 71 on the front wall 28 and the back surface 3 of the wafer 1, so that the peripheral portion on the back surface 3 of the wafer 1 contacts the pins 71 in the vertical direction due to the surface tension. Is maintained in a standing state. Simultaneously with the stop of the ultrasonic vibration device 25, the supply of pure water into the indirect tank 52 is stopped (S14), and the pure water in the indirect tank 52 is drained through the indirect tank supply / drain port 54 (S15). .

次に、酸洗浄液が洗浄槽給液口４９から洗浄槽２３内へ供給される（Ｓ１６）。これにより、ウエハ１の裏面３が洗浄槽２３内の酸洗浄液の圧力（水圧）によりピン７１に接触して保持され、更にこのウエハ１が受け部材７３に支持される。この酸洗浄液は、洗浄槽２３内で洗浄槽給液口４９から第１オーバーフロー槽２６へ向かって流動し、この酸洗浄液の一部が環状隙間７２から洗浄槽２３外へ流出し、第２オーバーフロー槽８０を経て排液槽７５へ至り、洗浄槽２３内の酸洗浄液の大部分が第１オーバーフロー槽２６を経て排液槽７５へ至る。この排液槽７５内の酸洗浄液は、ろ過され、洗浄槽給液口４９を経て洗浄槽２３内へ戻り循環する。このように循環する酸洗浄液が、ウエハ１の表面２及び裏面３を洗浄する（Ｓ１７）。この場合、酸洗浄液が環状隙間７２を経て洗浄槽２３外へ流出し、ウエハ１の裏面３を洗浄する過程において、ウエハ１の端面も洗浄される。   Next, the acid cleaning liquid is supplied from the cleaning tank liquid supply port 49 into the cleaning tank 23 (S16). As a result, the back surface 3 of the wafer 1 is held in contact with the pins 71 by the pressure (water pressure) of the acid cleaning liquid in the cleaning tank 23, and the wafer 1 is further supported by the receiving member 73. The acid cleaning liquid flows in the cleaning tank 23 from the cleaning tank supply port 49 toward the first overflow tank 26, and a part of the acid cleaning liquid flows out of the cleaning tank 23 through the annular gap 72, and the second overflow. Through the tank 80, the drainage tank 75 is reached, and most of the acid cleaning liquid in the cleaning tank 23 passes through the first overflow tank 26 and reaches the drainage tank 75. The acid cleaning liquid in the drainage tank 75 is filtered and returned to the cleaning tank 23 through the cleaning tank supply port 49 and circulated. The acid cleaning liquid circulating in this way cleans the front surface 2 and the back surface 3 of the wafer 1 (S17). In this case, the acid cleaning liquid flows out of the cleaning tank 23 through the annular gap 72, and in the process of cleaning the back surface 3 of the wafer 1, the end surface of the wafer 1 is also cleaned.

この酸洗浄の終了後、洗浄槽２３内の酸洗浄液を排液口６５を経て排液する（Ｓ１８）、この場合、正面壁２８のピン７１とウエハ１の裏面３との接触点に洗浄液が残ることにより、その表面張力により、ウエハ１の裏面３における周縁部が上記ピン７１に接触して縦方向に起立した状態のまま保持される。洗浄槽２３内からの酸洗浄液の排液後に、この洗浄槽２３内へリンス液としての純水（ＤIＷ）を供給する(Ｓ１９)。これにより、ウエハ１の裏面３がリンス液の圧力（水圧）によりピン７１に接触して保持され、更にこのウエハ１が受け部材７３に支持される。   After the completion of the acid cleaning, the acid cleaning liquid in the cleaning tank 23 is discharged through the drain port 65 (S18). In this case, the cleaning liquid is at the contact point between the pins 71 of the front wall 28 and the back surface 3 of the wafer 1. By remaining, the peripheral portion of the back surface 3 of the wafer 1 is held in a state where the peripheral edge of the wafer 1 comes into contact with the pins 71 and stands up in the vertical direction. After draining the acid cleaning liquid from the cleaning tank 23, pure water (DIW) as a rinsing liquid is supplied into the cleaning tank 23 (S19). As a result, the back surface 3 of the wafer 1 is held in contact with the pins 71 by the pressure of the rinsing liquid (water pressure), and the wafer 1 is further supported by the receiving member 73.

このリンス液が洗浄槽２３内で洗浄槽給液口４９から第１オーバーフロー槽２６へ向かって流動し、環状隙間７２から流出する間にウエハ１の表面２及び裏面３をリンスする（Ｓ２０）。この場合、リンス液が環状隙間７２を経て洗浄槽２３外へ流出し、ウエハ１の裏面３をリンスする過程において、ウエハ１の端面もリンスされる。このリンス時に、第１オーバーフロー槽２６及び第２オーバーフロー槽８０から排液槽７５を経て排水されたリンス液は廃棄され、洗浄槽２３内には洗浄槽給液口４９から新鮮なリンス液（純水）が供給される。   The rinse liquid flows in the cleaning tank 23 from the cleaning tank liquid supply port 49 toward the first overflow tank 26, and rinses the front surface 2 and the back surface 3 of the wafer 1 while flowing out from the annular gap 72 (S20). In this case, the rinsing liquid flows out of the cleaning tank 23 through the annular gap 72, and in the process of rinsing the back surface 3 of the wafer 1, the end surface of the wafer 1 is also rinsed. During this rinsing, the rinse liquid drained from the first overflow tank 26 and the second overflow tank 80 through the drain tank 75 is discarded, and a fresh rinse liquid (pure pure water) is supplied into the cleaning tank 23 from the cleaning tank supply port 49. Water).

上記リンス終了後に乾燥工程へ移行し、洗浄槽２３内から排液口６５を経てリンス液を排液する（Ｓ２１）。リンス液の排液時、図７に示す液面検出センサー８９により、リンス液の液面が、ウエハ保持装置２４の最も下方に位置する凹部４７の下端より下がったことを確認、即ち、リンス液が液面検出センサー８９より上方に存在しないことを検出して、図７及び図８に示すように、保持装置用シリンダ７８を前進動作させてウエハ保持装置２４を正面壁２８の開口３０内へ進入させて位置付け、ウエハ１の裏面３をウエハ保持装置２４によりピン７１に接触して保持する（Ｓ２２）。   After completion of the rinsing, the process proceeds to the drying step, and the rinsing liquid is drained from the cleaning tank 23 through the drainage port 65 (S21). When the rinsing liquid is drained, it is confirmed by the liquid level detection sensor 89 shown in FIG. 7 that the liquid level of the rinsing liquid has been lowered from the lower end of the concave portion 47 located at the lowest position of the wafer holding device 24. Is not present above the liquid level detection sensor 89, and as shown in FIGS. 7 and 8, the holding device cylinder 78 is moved forward to move the wafer holding device 24 into the opening 30 in the front wall 28. The wafer 3 is positioned by entering, and the back surface 3 of the wafer 1 is held in contact with the pins 71 by the wafer holding device 24 (S22).

Ｓ２２で、ウエハ１の裏面３をウエハ保持装置２４により保持したとき、ウエハ１が疎水性であれば（Ｓ２３）、洗浄槽２３からのリンス液（純水）の排液と同時に、乾燥用流体供給槽２７におけるガス供給部５８から常温の窒素ガスを噴射して洗浄槽２３内へ導く（Ｓ２４）。疎水性のウエハ１を常温の窒素ガスの雰囲気下とすることで、次工程で洗浄槽２３内に噴射されるＩＰＡベーパーがウエハ１に馴染みやすい状態とするものである。そして、ガス供給部５８からの常温の窒素ガスの噴射開始時から所定時間経過後に、常温の窒素ガスの噴射を停止して（Ｓ２５）、次に述べるＩＰＡベーパーの噴射へ移行する。   In S22, when the back surface 3 of the wafer 1 is held by the wafer holding device 24, if the wafer 1 is hydrophobic (S23), the rinsing liquid (pure water) is drained from the cleaning tank 23 and simultaneously the drying fluid. Normal temperature nitrogen gas is injected from the gas supply unit 58 in the supply tank 27 and guided into the cleaning tank 23 (S24). By placing the hydrophobic wafer 1 in an atmosphere of nitrogen gas at room temperature, the IPA vapor sprayed into the cleaning tank 23 in the next step is easily adapted to the wafer 1. Then, after a predetermined time has elapsed from the start of the injection of the normal temperature nitrogen gas from the gas supply unit 58, the normal temperature nitrogen gas injection is stopped (S25), and the process proceeds to the IPA vapor injection described below.

上記ステップＳ２０のリンス液（純水）排液後に、ステップＳ２３においてウエハ１が疎水性でない場合には、洗浄槽２３内から排液口６５を経てリンス液が排液された後に、乾燥用流体供給槽２７における２流体ノズル５６からＩＰＡベーパーを噴射する（Ｓ２６）。このＩＰＡベーパーの噴射開始前にガス排気口６４が閉操作される。ＩＰＡベーパーが洗浄槽２３内へ導かれることで、洗浄槽２３内がＩＰＡ雰囲気下になり、次工程（Ｓ２７）の高温の窒素ガスによる乾燥が促進されやすい状態となる。この場合、図１２〜図１４に示すように、ウエハ保持装置２４のカバー４６は、正面壁２８に当接し、カバー４６のシール部材４６ａが正面壁２８に密着しているため、カバー４６と正面壁２８とのシール性が良好に確保されており、図１４において矢印で示すように、カバー４６によりＩＰＡベーパーが正面壁２８とウエハ保持装置２４との隙間から拡散してしまうことが防止され、ウエハ１の裏面もＩＰＡベーパー雰囲気下となり、ウエハ１の裏面においても、次工程（Ｓ２７）の高温の窒素ガスによる乾燥が促進されやすい状態となる。   After the rinse liquid (pure water) is drained in step S20, if the wafer 1 is not hydrophobic in step S23, the rinse liquid is drained from the cleaning tank 23 through the drain port 65, and then the drying fluid. IPA vapor is sprayed from the two-fluid nozzle 56 in the supply tank 27 (S26). The gas exhaust port 64 is closed before the start of the IPA vapor injection. Since the IPA vapor is guided into the cleaning tank 23, the inside of the cleaning tank 23 is in an IPA atmosphere, and the drying with the high-temperature nitrogen gas in the next step (S27) is easily promoted. In this case, as shown in FIGS. 12 to 14, the cover 46 of the wafer holding device 24 is in contact with the front wall 28, and the seal member 46 a of the cover 46 is in close contact with the front wall 28. The sealing property with the wall 28 is ensured well, and as shown by the arrow in FIG. 14, the cover 46 prevents the IPA vapor from diffusing from the gap between the front wall 28 and the wafer holding device 24, The back surface of the wafer 1 is also in an IPA vapor atmosphere, and the back surface of the wafer 1 is also in a state where the drying by the high-temperature nitrogen gas in the next step (S27) is easily promoted.

上記ＩＰＡベーパー供給終了後に、乾燥用流体供給槽２７におけるガス供給部５８から高温の窒素ガス（ＨＯＴ Ｎ２）が洗浄槽２３内へ供給されて、洗浄槽２３内のＩＰＡが気化され、ウエハ１の表面２及び裏面３が急速に乾燥される（Ｓ２７）。この高温の窒素ガスによるウエハ１の乾燥時には、ウエハ保持装置２４へ導入されて凹部４７において旋回流を形成するガスにも高温の窒素ガスが混入されて、ウエハ保持装置２４が非接触状態で保持するウエハ１が裏面からも加温されるとともに、ウエハ保持装置の内側中心に設けられた乾燥用流体供給孔４８からも高温の窒素ガスを噴射することにより、このウエハ１からの乾燥がより促進される。更に、この高温の窒素ガスによる乾燥時にはガス排気口６２（図７）が開操作されて、窒素ガスが洗浄槽２３外へ排気される。   After completion of the IPA vapor supply, high-temperature nitrogen gas (HOT N2) is supplied from the gas supply unit 58 in the drying fluid supply tank 27 into the cleaning tank 23, and the IPA in the cleaning tank 23 is vaporized. The front surface 2 and the back surface 3 are rapidly dried (S27). When the wafer 1 is dried with the high-temperature nitrogen gas, the high-temperature nitrogen gas is also mixed into the gas that is introduced into the wafer holding device 24 and forms a swirling flow in the recess 47, and the wafer holding device 24 is held in a non-contact state. The wafer 1 to be heated is also heated from the back side, and the drying from the wafer 1 is further accelerated by injecting high-temperature nitrogen gas from the drying fluid supply hole 48 provided in the center inside the wafer holding device. Is done. Further, at the time of drying with this high-temperature nitrogen gas, the gas exhaust port 62 (FIG. 7) is opened, and the nitrogen gas is exhausted out of the cleaning tank 23.

上述の乾燥工程終了後にウエハ１の搬出工程へ移行し、図６に示すように、洗浄装置１１の正面壁２８が装置躯体２９から離反する（Ｓ２８）。そして、乾燥工程において、高温の乾燥用流体により熱を帯びた洗浄槽２３内の温度の一定化（冷却）及び槽内の洗浄を行い、次に処理されるウエハに備えるべく、純水ノズル５７より純水を装置躯体２９及び石英板５３の表面に沿って流れるように供給し、洗浄槽２３内の冷却及び洗浄を行う（Ｓ２９）。洗浄槽２３内に供給された純水は、排液口６５を経て排液される。この純水ノズル５７からの純水の供給は、現在のウエハ１の処理が終了し、次にウエハ搬送容器１７から搬入されるウエハの処理工程において、洗浄装置１１の正面壁２８が装置躯体２９から離反し、ウエハ保持装置２４が、搬送用ロボット１５からウエハ１を非接触状態で受け取るまで（Ｓ４）続けられる（純水の供給停止：Ｓ３）。この後、図５に示すように、搬送用ロボット１５のハンド部２０Ｄが正面壁２８と装置躯体２９との間に入り、ウエハ１の表面２を非接触状態で保持して、洗浄装置１１のウエハ保持装置２４からウエハ１を受け取る（Ｓ３０）。この搬送用ロボット１５は、図１に示すように、ウエハ給排部１４におけるウエハ搬送容器１７（フープ）が開操作された時点で、受け取ったウエハ１をウエハ搬送容器１７内へ収納する（Ｓ３１）。   After the above-described drying process is completed, the process proceeds to the wafer 1 unloading process, and as shown in FIG. 6, the front wall 28 of the cleaning apparatus 11 is separated from the apparatus housing 29 (S28). Then, in the drying process, the temperature in the cleaning tank 23 heated by the high-temperature drying fluid is made constant (cooling) and the inside of the tank is cleaned, and a pure water nozzle 57 is prepared to prepare for a wafer to be processed next. More pure water is supplied so as to flow along the surfaces of the apparatus housing 29 and the quartz plate 53, and the cleaning tank 23 is cooled and cleaned (S29). The pure water supplied into the cleaning tank 23 is drained through the drain port 65. The supply of pure water from the pure water nozzle 57 is such that the front wall 28 of the cleaning device 11 is attached to the device housing 29 in the processing step of the wafer that is subsequently processed from the wafer transfer container 17 after the current processing of the wafer 1 is completed. The process continues until the wafer holding device 24 receives the wafer 1 from the transfer robot 15 in a non-contact state (S4) (pure water supply stop: S3). Thereafter, as shown in FIG. 5, the hand portion 20D of the transfer robot 15 enters between the front wall 28 and the apparatus housing 29, holds the surface 2 of the wafer 1 in a non-contact state, and The wafer 1 is received from the wafer holding device 24 (S30). As shown in FIG. 1, the transfer robot 15 stores the received wafer 1 in the wafer transfer container 17 when the wafer transfer container 17 (hoop) in the wafer supply / discharge section 14 is opened (S31). ).

以上のように構成されたことから、上記実施の形態によれば、次の効果（１）〜（１４）を奏する。   With the configuration as described above, the following effects (1) to (14) are achieved according to the above embodiment.

（１）装置躯体２９に当接して洗浄槽２３を構成する正面壁２８が、ウエハ１の外形に対応する開口３０を備え、ウエハ保持装置２４が、正面壁２８の外側から上記開口３０を通して、この正面壁２８の内側に搬入されたウエハ１の裏面３を保持可能として、このウエハ１を縦方向に起立状態とし、正面壁２８の内面における開口３０周囲に設けられたピン７１にウエハ１の裏面３が接触することで、このウエハ１と上記開口３０周囲との間に環状隙間７２を形成する。このことから、洗浄槽２３内に洗浄液またはリンス液が供給されたときには、この洗浄槽２３内の洗浄液またはリンス液によりウエハ１の表面２を洗浄またはリンスすると共に、洗浄槽２３内における洗浄液またはリンス液の圧力（水圧）の作用で、ピン７１により形成された環状隙間７２を経て洗浄槽２３から流出した洗浄液またはリンス液が、ウエハ１の裏面を洗浄またはリンスする。この結果、ウエハ１の表面２及び裏面３を同時に洗浄またはリンスすることができる。また、洗浄液またはリンス液が環状隙間７２を経て洗浄槽２３外へ流出し、ウエハ１の裏面３を洗浄等する過程において、ウエハ１の端面も洗浄又はリンスすることができる。   (1) The front wall 28 that constitutes the cleaning tank 23 in contact with the apparatus housing 29 includes an opening 30 corresponding to the outer shape of the wafer 1, and the wafer holding device 24 passes through the opening 30 from the outside of the front wall 28. The back surface 3 of the wafer 1 carried inside the front wall 28 can be held, the wafer 1 is set up in the vertical direction, and the pins 71 provided around the opening 30 on the inner surface of the front wall 28 are connected to the pins 71 of the wafer 1. When the back surface 3 comes into contact, an annular gap 72 is formed between the wafer 1 and the periphery of the opening 30. Therefore, when the cleaning liquid or the rinsing liquid is supplied into the cleaning tank 23, the surface 2 of the wafer 1 is cleaned or rinsed with the cleaning liquid or the rinsing liquid in the cleaning tank 23, and the cleaning liquid or the rinsing in the cleaning tank 23 is used. The cleaning liquid or the rinsing liquid flowing out from the cleaning tank 23 through the annular gap 72 formed by the pins 71 cleans or rinses the back surface of the wafer 1 by the action of the liquid pressure (water pressure). As a result, the front surface 2 and the back surface 3 of the wafer 1 can be simultaneously cleaned or rinsed. Further, the cleaning liquid or the rinsing liquid flows out of the cleaning tank 23 through the annular gap 72, and in the process of cleaning the back surface 3 of the wafer 1, the end surface of the wafer 1 can also be cleaned or rinsed.

（２）ウエハ１の裏面３を洗浄またはリンスした洗浄液またはリンス液は、洗浄槽２３内における洗浄液またはリンス液の圧力（水圧）の作用によってこの洗浄槽２３内へ流入することがないので、ウエハ１の裏面３を洗浄またはリンスした洗浄液またはリンス液によって、ウエハ１の表面が汚染される転写汚染を確実に防止できる。   (2) Since the cleaning liquid or the rinsing liquid for cleaning or rinsing the back surface 3 of the wafer 1 does not flow into the cleaning tank 23 by the action of the pressure of the cleaning liquid or the rinse liquid in the cleaning tank 23 (water pressure), the wafer Transfer contamination that contaminates the surface of the wafer 1 can be reliably prevented by a cleaning solution or a rinsing solution that cleans or rinses the back surface 3 of 1.

（３）正面壁２８の開口３０周囲と、縦方向に起立して配設されたウエハ１との間の環状隙間７２は、上方部分が下方部分よりも広く設定されている。従って、上記環状隙間７２の下方部分から流出する洗浄槽２３内の洗浄液またはリンス液の流出量を抑制でき、この洗浄槽２３内に洗浄液またはリンス液を良好に貯溜できると共に、上記環状隙間７２の上方部分を広く設定することで、この上方部分から流出する洗浄液またはリンス液の流出量が増大し、ウエハ１の裏面３の全面を均一に洗浄またはリンスすることができる。   (3) The upper part of the annular gap 72 between the periphery of the opening 30 of the front wall 28 and the wafer 1 arranged upright in the vertical direction is set wider than the lower part. Therefore, the outflow amount of the cleaning liquid or the rinse liquid in the cleaning tank 23 flowing out from the lower portion of the annular gap 72 can be suppressed, and the cleaning liquid or the rinse liquid can be well stored in the cleaning tank 23 and the annular gap 72 can be stored. By setting the upper part wide, the outflow amount of the cleaning liquid or the rinsing liquid flowing out from the upper part is increased, and the entire back surface 3 of the wafer 1 can be uniformly cleaned or rinsed.

（４）洗浄装置１１には、ウエハ１に対向すると共に略平行して超音波振動装置２５の超音波振動子５１及び石英板５３が配置されたことから、この超音波振動装置２５により発生する超音波がウエハ１の表面２及び裏面３のそれぞれの全面に均一に作用するので、このウエハ１の表面２及び裏面３をムラなく良好に洗浄することができる。   (4) Since the ultrasonic vibrator 51 and the quartz plate 53 of the ultrasonic vibration device 25 are disposed in the cleaning device 11 so as to face the wafer 1 and substantially in parallel, the ultrasonic vibration device 25 generates the ultrasonic vibration. Since the ultrasonic waves uniformly act on the entire surface 2 and the back surface 3 of the wafer 1, the front surface 2 and the back surface 3 of the wafer 1 can be cleaned satisfactorily.

（５）ウエハ１の裏面３が非接触状態でウエハ保持装置２４に保持されることから、このウエハ１の裏面３がウエハ保持装置２４により保持されることによって汚染されることを防止できるともに、従来、チャック等が接して洗浄が困難であったウエハ１の端面においても、同様に汚染の防止ができる。   (5) Since the back surface 3 of the wafer 1 is held in the wafer holding device 24 in a non-contact state, the back surface 3 of the wafer 1 can be prevented from being contaminated by being held by the wafer holding device 24. Conventionally, contamination can also be prevented on the end face of the wafer 1 that has been difficult to clean due to contact with a chuck or the like.

（６）ウエハ保持装置２４は、正面壁２８に対し開口３０の軸方向３０Ｒに相対移動可能に当該正面壁２８に、取付プレート７７、サイド板７９及び保持装置用シリンダ７８を介して設置され、洗浄の開始から、乾燥工程が開始されるまでは、ウエハ１から退避して、このウエハ１の保持を解除するよう構成されている。従って、ウエハ１は、洗浄槽２３内に洗浄液またはリンス液が供給されたときには、この洗浄液またはリンス液の圧力（水圧）によって保持され、上記以外の時にはウエハ保持装置２４によって非接触状態に保持されるので、いずれの場合も汚染されることがない。また、従来、チャック等が接して洗浄が困難であったウエハ１の端面においても、同様に汚染の防止ができる。   (6) The wafer holding device 24 is installed on the front wall 28 via a mounting plate 77, a side plate 79, and a holding device cylinder 78 so as to be relatively movable in the axial direction 30R of the opening 30 with respect to the front wall 28. From the start of cleaning until the drying process is started, the wafer 1 is withdrawn and the holding of the wafer 1 is released. Accordingly, the wafer 1 is held by the pressure (water pressure) of the cleaning liquid or the rinsing liquid when the cleaning liquid or the rinsing liquid is supplied into the cleaning tank 23, and is held in a non-contact state by the wafer holding device 24 in other cases. Therefore, it is not contaminated in any case. Further, contamination can be similarly prevented even on the end face of the wafer 1 that has been conventionally difficult to clean due to contact with a chuck or the like.

（７）正面壁２８に設置された受け部材７３が、ウエハ１を点接触状態で支持することから、ウエハ１が受け部材７３に支持されることで発生する汚染を極力抑制することができる。   (7) Since the receiving member 73 installed on the front wall 28 supports the wafer 1 in a point contact state, contamination generated by the wafer 1 being supported by the receiving member 73 can be suppressed as much as possible.

（８）洗浄槽２３内へは、この洗浄槽２３の外部に設置されたフィルタによりろ過された洗浄液が循環して供給されることから、洗浄液の繰り返しの使用によってその消費量を低減できると共に、循環する洗浄液の温度を測定して維持することのみで、この洗浄液の温度管理も容易に実施できる。   (8) Since the cleaning liquid filtered by the filter installed outside the cleaning tank 23 is circulated and supplied into the cleaning tank 23, the consumption can be reduced by repeated use of the cleaning liquid, The temperature control of the cleaning liquid can be easily performed only by measuring and maintaining the temperature of the circulating cleaning liquid.

（９）ウエハ１が縦方向に起立した状態で洗浄槽２３内に配設されるので、洗浄槽２３ひいては洗浄装置１１の全体の省スペース化を実現できると共に、ウエハ１の外径寸法の変更に対して、外径の異なるウエハ保持装置２４と、開口３０の径が異なる正面壁２８等を選定することで容易に対応できる。   (9) Since the wafer 1 is arranged in the vertical direction in the cleaning tank 23, the entire space of the cleaning tank 23 and thus the cleaning apparatus 11 can be saved, and the outer diameter of the wafer 1 can be changed. On the other hand, it is possible to easily cope with this by selecting the wafer holding device 24 having a different outer diameter and the front wall 28 having a different diameter of the opening 30.

（１０）ウエハ１が裏面３の周縁部を正面壁２８の内面における開口３０の周囲のピン７１に接触させて環状隙間７２を形成しつつ、洗浄槽２３に静止状態で装着されることから、洗浄装置１１に回転機構部が存在しない。このため、洗浄装置１１における部品点数を低減できると共に、回転機構部の煩雑な調整が不要となり、また、洗浄装置１１内への洗浄液などの供給や不要なガスの排気を、回転機構部により生ずる気流の影響を考慮することなく容易に実施できる。   (10) Since the wafer 1 is mounted in the washing tank 23 in a stationary state while the peripheral portion of the back surface 3 is brought into contact with the pins 71 around the opening 30 on the inner surface of the front wall 28 to form the annular gap 72. There is no rotation mechanism in the cleaning device 11. For this reason, the number of parts in the cleaning device 11 can be reduced, and complicated adjustment of the rotation mechanism unit is not required, and supply of cleaning liquid and the like to the cleaning device 11 and exhaust of unnecessary gas are generated by the rotation mechanism unit. It can be easily implemented without considering the influence of airflow.

（１１）洗浄槽２３には、乾燥用流体（例えばＩＰＡベーパー、純水ミスト、高温の窒素ガス）を洗浄槽２３内へ導く乾燥用流体供給槽２７が連設されたことから、ウエハ１を洗浄槽２３内に装着させた状態で乾燥用流体供給槽２７からの上記乾燥用流体によりウエハ１を乾燥できる。このため、洗浄・リンス工程及び乾燥工程を連続して迅速に実施できる。   (11) Since the drying fluid supply tank 27 for guiding the drying fluid (for example, IPA vapor, pure water mist, high-temperature nitrogen gas) into the cleaning tank 23 is connected to the cleaning tank 23, the wafer 1 is removed. The wafer 1 can be dried by the above-mentioned drying fluid from the drying fluid supply tank 27 in a state of being mounted in the cleaning tank 23. For this reason, a washing | cleaning / rinsing process and a drying process can be implemented rapidly continuously.

（１２）２流体ノズル５６に供給される高温のＩＰＡ及び窒素ガスの温度が、２流体ノズル５６からの流体の噴射と同時に流体が気化し得る温度であることから、液体の噴射に比較して、被処理物に付着した水分の置換効率が上がるとともに、ＩＰＡ及び窒素ガスの噴射液量のみならず、排液の量も減らすことが可能である。   (12) Since the temperature of the high-temperature IPA and nitrogen gas supplied to the two-fluid nozzle 56 is a temperature at which the fluid can be vaporized simultaneously with the ejection of the fluid from the two-fluid nozzle 56, compared with the liquid ejection. In addition to increasing the efficiency of replacing the water adhering to the object to be processed, it is possible to reduce not only the amount of IPA and nitrogen gas spray but also the amount of drainage.

（１３）ＩＰＡを、５９ａパイプに巻き付けられたラバーヒーター５９によって加熱することから、簡易な構成でＩＰＡの加熱が行えるとともに、パイプ５９ａを例えば、水や、高純度薬液に対して金属イオンの溶出を抑えたＳＵＳ配管で構成し、上記ＳＵＳ配管にアースを接続することにより、帯電を防止して、発火しやすいＩＰＡに対しても防爆を容易に達成することができる。   (13) Since the IPA is heated by the rubber heater 59 wound around the 59a pipe, the IPA can be heated with a simple configuration, and the pipe 59a can be eluted with, for example, water or a high-purity chemical solution. By using a SUS pipe that suppresses the above and connecting a ground to the SUS pipe, it is possible to prevent explosion and easily achieve explosion-proof even for IPA that easily ignites.

（１４）乾燥促進用流体として、まずＩＰＡベーパーを用いて洗浄槽２３内をＩＰＡ雰囲気下として次工程において乾燥を促進させやすい状態とし、次工程として加熱された窒素ガスを用いてウエハ１に付着したＩＰＡを気化させて、急速に乾燥させることから、ウエハ１の表面２に付着した水分を確実且つ迅速に乾燥させることができる。また、窒素の使用により、不活性ガスの雰囲気となり、酸素が洗浄槽２３内から排除されるため、ウォーターマークの発生が防止される。   (14) As the drying accelerating fluid, first, the inside of the washing tank 23 is placed in an IPA atmosphere using IPA vapor so that drying is easily promoted in the next step, and the heated nitrogen gas is attached to the wafer 1 as the next step. Since the IPA is vaporized and rapidly dried, the moisture adhering to the surface 2 of the wafer 1 can be surely and quickly dried. Further, the use of nitrogen provides an atmosphere of an inert gas, and oxygen is excluded from the cleaning tank 23, thereby preventing the generation of a watermark.

［Ｂ］第２の実施の形態（図１８〜図２３）
図１８は、本発明に係る洗浄装置の第２の実施の形態を示すものであって、その待機状態を、斜め正面側から目視して示す斜視図である。図１９は、図１８の洗浄装置のウエハ搬入出状態を示す側面図である。図２０は、図１８の洗浄装置におけるウエハの洗浄等の処理状態を示す正面図である。図２１は、図２０のVII矢視図である。図２２は、図１８の洗浄装置の原理を説明するための概略構成を示す断面図である。図２３は、図２２の一部を拡大して示す断面図である。この第２を実施の形態において、前記第１の実施の形態と同様な部分は、同一の符号を付すことにより説明を省略する。 [B] Second embodiment (FIGS. 18 to 23)
FIG. 18 shows a second embodiment of the cleaning device according to the present invention, and is a perspective view showing the standby state as viewed from the oblique front side. FIG. 19 is a side view showing the wafer loading / unloading state of the cleaning apparatus of FIG. FIG. 20 is a front view showing a processing state such as wafer cleaning in the cleaning apparatus of FIG. 21 is a view taken along arrow VII in FIG. FIG. 22 is a cross-sectional view showing a schematic configuration for explaining the principle of the cleaning apparatus of FIG. FIG. 23 is an enlarged cross-sectional view of a part of FIG. In the second embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

この第２の実施の形態の洗浄装置９０では、第１の実施の形態において、正面壁２８の開口３０の周囲に設けられたざぐり面部７０及びこのざぐり面部７０に隙間形成部材として植設されたピン７１が存在せず、ウエハ１の裏面３の周縁部が正面壁２８に密着されて環状隙間７２が存在しない構成となっている。ウエハ１の裏面３の周縁部が正面壁２８に密着されて、正面壁２８の開口３０を閉塞するため、洗浄槽２３から洗浄液またはリンス液が流出しない。従って、ウエハ１の表面のみが洗浄またはリンスされ、裏面３は洗浄またはリンスされない、片面のみ洗浄またはリンスされる構成となっている。洗浄槽２３からウエハ１の裏面３側に洗浄液またはリンス液が流出しないため、ウエハ保持装置２４を正面壁２８から退避させる必要がなく、正面壁２８とウエハ保持装置２４とが結合されて、一体に移動可能な構成となっている。   In the cleaning device 90 according to the second embodiment, in the first embodiment, the spot face part 70 provided around the opening 30 of the front wall 28 and the spot face part 70 are implanted as gap forming members. The pins 71 do not exist, and the peripheral portion of the back surface 3 of the wafer 1 is in close contact with the front wall 28 so that the annular gap 72 does not exist. Since the peripheral edge of the back surface 3 of the wafer 1 is in close contact with the front wall 28 and closes the opening 30 of the front wall 28, the cleaning liquid or the rinse liquid does not flow out from the cleaning tank 23. Therefore, only the front surface of the wafer 1 is cleaned or rinsed, and the back surface 3 is not cleaned or rinsed, and only one surface is cleaned or rinsed. Since the cleaning liquid or the rinsing liquid does not flow out from the cleaning tank 23 to the back surface 3 side of the wafer 1, there is no need to retract the wafer holding device 24 from the front wall 28, and the front wall 28 and the wafer holding device 24 are combined and integrated. It is configured to be movable.

その構成を具体的に説明するに、洗浄槽２３は、一側壁としての正面壁２８と、この正面壁２８以外の装置躯体２９とが当接して扁平のボックス形状に構成され、この正面壁２８にウエハ１の外形に対応する形状の開口３０が形成される。また、正面壁２８の内面に、開口３０の周囲に沿ってＯリング等のシール部材３１(図２０及び図２２)が配設される。正面壁２８の内面には、更に、シール部材３１の外側で装置躯体２９に当接し得る位置にシール部材３２が配設される。   Specifically, the cleaning tank 23 is configured in a flat box shape by contacting a front wall 28 as one side wall with an apparatus housing 29 other than the front wall 28, and the front wall 28. Then, an opening 30 having a shape corresponding to the outer shape of the wafer 1 is formed. Further, a seal member 31 (FIGS. 20 and 22) such as an O-ring is disposed on the inner surface of the front wall 28 along the periphery of the opening 30. A seal member 32 is further disposed on the inner surface of the front wall 28 at a position where it can abut on the apparatus housing 29 outside the seal member 31.

図１９及び図２２に示すように、上記ウエハ保持装置２４は、正面壁２８の開口３０内に位置づけられた状態で、正面壁２８に結合され、この正面壁２８と一体に移動可能とされる。従って、正面壁２８が装置躯体２９から離反したときに、搬送用ロボット１５のハンド部２０Ｄがウエハ１の表面２を非接触状態で保持して正面壁２８と装置躯体２９との間に入り、このときウエハ保持装置２４が負圧の作用で、正面壁２８の外側から開口３０を通して上記ウエハ１の裏面３を非接触状態で保持して、ウエハ１がウエハ保持装置２４に受け渡され、洗浄装置９０の洗浄槽２３内に搬入される。ウエハ１が洗浄槽２３内に搬入された後に、図２１及び図２２に示すように、正面壁２８が装置躯体２９に当接して洗浄槽２３が構成される。   As shown in FIGS. 19 and 22, the wafer holding device 24 is coupled to the front wall 28 while being positioned in the opening 30 of the front wall 28, and can move integrally with the front wall 28. . Accordingly, when the front wall 28 is separated from the apparatus housing 29, the hand portion 20D of the transfer robot 15 holds the surface 2 of the wafer 1 in a non-contact state and enters between the front wall 28 and the apparatus housing 29, At this time, the wafer holding device 24 holds the back surface 3 of the wafer 1 in a non-contact state from the outside of the front wall 28 through the opening 30 by the action of negative pressure, and the wafer 1 is transferred to the wafer holding device 24 for cleaning. It is carried into the cleaning tank 23 of the apparatus 90. After the wafer 1 is carried into the cleaning tank 23, the front wall 28 abuts against the apparatus housing 29 to form the cleaning tank 23 as shown in FIGS.

ウエハ１の裏面３がウエハ保持装置２４に非接触状態で保持されることによって、ウエハ１は、洗浄槽２３内で縦方向に起立し、且つ裏面３の周縁部が正面壁２８のシール部材３１に密着されて正面壁２８の開口３０を閉塞し、表面２が洗浄槽２３内に臨み、裏面３が洗浄槽２３外に臨むようにして洗浄槽２３に装着される。ウエハ１の裏面３の周縁部が正面壁２８のシール部材３１に密着されると共に、正面壁２８のシール部材３２が装置躯体２９に密着されることで、洗浄槽２３は液密状態に確保される。また、洗浄槽２３内が洗浄液等の流体で満たされている状態においては、ウエハ１に対する流体の水圧により、ウエハ１の裏面３の周縁部が正面壁２８のシール部材３１に密着され、ウエハ保持装置２４を作動させない場合であっても、液密状態が確保される。また、ウエハ１の表面２が洗浄槽２３内に臨み、裏面３が洗浄槽２３外に臨むことで、洗浄槽２３内の洗浄液にウエハ１の表面２が接液し、ウエハ１の裏面３は接液しないように構成される。   When the back surface 3 of the wafer 1 is held in a non-contact state by the wafer holding device 24, the wafer 1 stands in the vertical direction in the cleaning tank 23, and the peripheral portion of the back surface 3 is a sealing member 31 of the front wall 28. Is attached to the cleaning tank 23 so that the front surface 2 faces the inside of the cleaning tank 23 and the back surface 3 faces the outside of the cleaning tank 23. The peripheral portion of the back surface 3 of the wafer 1 is brought into close contact with the sealing member 31 of the front wall 28 and the sealing member 32 of the front wall 28 is brought into close contact with the apparatus housing 29, so that the cleaning tank 23 is secured in a liquid-tight state. The Further, in a state where the cleaning tank 23 is filled with a fluid such as a cleaning liquid, the peripheral portion of the back surface 3 of the wafer 1 is brought into close contact with the sealing member 31 of the front wall 28 by the hydraulic pressure of the fluid against the wafer 1 to hold the wafer. Even when the device 24 is not operated, a liquid-tight state is ensured. Further, since the front surface 2 of the wafer 1 faces the cleaning bath 23 and the back surface 3 faces the outside of the cleaning bath 23, the front surface 2 of the wafer 1 comes into contact with the cleaning liquid in the cleaning bath 23. It is configured not to come into contact with liquid.

高周波発振器からの高周波信号が超音波振動子５１へ供給されることによって、この超音波振動子５１が超音波振動し、この超音波振動が間接槽５２内の純水及び石英板５３を経て、洗浄槽２３に装着されたウエハ１の表面２へ照射され、表面２のみの洗浄が行われる。この場合、ウエハ１の裏面３の周縁部が正面壁２８のシール部材３１に密着された状態で洗浄されるため、ウエハ１の端面も洗浄される。   By supplying a high-frequency signal from the high-frequency oscillator to the ultrasonic vibrator 51, the ultrasonic vibrator 51 vibrates ultrasonically, and this ultrasonic vibration passes through pure water in the indirect tank 52 and the quartz plate 53, Irradiation is performed on the surface 2 of the wafer 1 mounted in the cleaning tank 23, and only the surface 2 is cleaned. In this case, since the peripheral portion of the back surface 3 of the wafer 1 is cleaned while being in close contact with the seal member 31 of the front wall 28, the end surface of the wafer 1 is also cleaned.

その他の構成については、前記第１の実施の形態と同様に構成されることから、この第２の実施の形態においても、前記第１の実施の形態の効果（５）、（８）、（９）、（１１）〜（１４）と同様な効果を奏するのみならず、次の効果（１５）〜（１６）を奏する。   Since the other configuration is the same as that of the first embodiment, the effects (5), (8), (8) of the first embodiment are also applied to the second embodiment. 9) In addition to the same effects as (11) to (14), the following effects (15) to (16) are achieved.

（１５）洗浄装置９０における装置躯体２９に正面壁２８が当接して洗浄槽２３が構成され、この洗浄槽２３の正面壁２８に開口３０が形成され、ウエハ保持装置２４がウエハ１の裏面３を、洗浄槽２３の外側から開口３０を通して非接触状態で保持し、このウエハ保持装置２４により、ウエハ１が縦方向に起立し、且つこのウエハ保持装置２４や、ウエハ１に対する水圧により、ウエハ１の裏面３の周縁部が正面壁２８の内面における開口３０周囲のシール部材３１に密着されて開口３０を閉塞し、ウエハ１が表面２を洗浄槽２３内に、裏面３を洗浄槽２３外にそれぞれ臨ませて当該洗浄槽２３に装着されることから、ウエハ１の表面２に洗浄液が接し、裏面３に洗浄液が接しないので、ウエハ１の裏面３の汚れが表面２側に回り込んで当該表面２が汚染される転写汚染を確実に防止できる。また、ウエハ１の裏面３の周縁部が正面壁２８のシール部材３１に密着された状態で洗浄されるため、ウエハ１の端面も洗浄される。   (15) The front wall 28 abuts on the apparatus housing 29 in the cleaning apparatus 90 to form the cleaning tank 23, the opening 30 is formed in the front wall 28 of the cleaning tank 23, and the wafer holding device 24 is connected to the back surface 3 of the wafer 1. The wafer 1 is held in a non-contact state from the outside of the cleaning tank 23 through the opening 30, and the wafer 1 stands in the vertical direction by the wafer holding device 24, and the wafer 1 is caused by water pressure on the wafer holding device 24 and the wafer 1. The periphery of the back surface 3 of the wafer is closely attached to a seal member 31 around the opening 30 on the inner surface of the front wall 28 to close the opening 30, and the wafer 1 has the front surface 2 in the cleaning tank 23 and the back surface 3 in the cleaning tank 23. Since the cleaning liquid contacts the front surface 2 of the wafer 1 and the cleaning liquid does not contact the back surface 3 because they are mounted on the cleaning tank 23, the dirt on the back surface 3 of the wafer 1 wraps around the front surface 2 side. The transfer contamination surface 2 from being contaminated can be reliably prevented. Further, since the peripheral portion of the back surface 3 of the wafer 1 is cleaned while being in close contact with the sealing member 31 of the front wall 28, the end surface of the wafer 1 is also cleaned.

（１６）洗浄装置９０には、ウエハ１に対向すると共に平行して超音波振動装置２５の超音波振動子５１及び石英板５３が配置されたことから、この超音波振動装置２５により発生する超音波がウエハ１の表面２の全面に均一に作用するので、このウエハ１の表面２をムラなく良好に洗浄することができる。   (16) Since the ultrasonic vibrator 51 and the quartz plate 53 of the ultrasonic vibration device 25 are arranged in the cleaning device 90 so as to face and parallel to the wafer 1, the ultrasonic wave generated by the ultrasonic vibration device 25 is superposed. Since the sound wave acts uniformly on the entire surface 2 of the wafer 1, the surface 2 of the wafer 1 can be cleaned well without unevenness.

以上、本発明を上記実施の形態に基づいて説明したが、本発明はこれに限定されるものではない。   As mentioned above, although this invention was demonstrated based on the said embodiment, this invention is not limited to this.

また、上記両実施の形態では、洗浄槽２３から洗浄液またはリンス液を排液する際には、正面壁２８のピン７１とウエハ１の裏面３との接触点における洗浄液等の残存液の表面張力により、ウエハ１を縦方向に起立した状態のまま保持するものを述べたが、排液の度に保持装置用シリンダ７８の作用でウエハ保持装置２４が正面壁２８の開口３０内に進入し、このウエハ保持装置２４がウエハ１の裏面３を保持することにより、非接触保持を確実化させてもよい。   In both the above embodiments, when the cleaning liquid or the rinsing liquid is drained from the cleaning tank 23, the surface tension of the remaining liquid such as the cleaning liquid at the contact point between the pin 71 of the front wall 28 and the back surface 3 of the wafer 1. As described above, the wafer 1 is held upright in the vertical direction. However, the wafer holding device 24 enters the opening 30 of the front wall 28 by the action of the holding device cylinder 78 every time the liquid is drained. The wafer holding device 24 may hold the back surface 3 of the wafer 1 to ensure non-contact holding.

また、上記第１の実施の形態では、洗浄装置１１のウエハ保持装置２４が、旋回流により発生する負圧の作用でウエハ１の裏面３を非接触状態で保持するものを述べたが、例えば上記実施の形態において、正面壁２８に設けられたピン７１を略真空圧の作用により吸引する吸引保持装置とし、搬送用ロボット１５のハンド部２０Ｄにより正面壁２８の内側に位置付けられたウエハ１の裏面３の周縁部を上記ピン７１に吸着させて、当該ウエハ１を正面壁２８に装着してもよい。この場合には、ウエハ保持装置２４及び保持装置用シリンダ７８を省略できるので、洗浄装置１１の構造を簡素化できると共に、洗浄装置１１の動作も容易化できる。   In the first embodiment described above, the wafer holding device 24 of the cleaning device 11 holds the back surface 3 of the wafer 1 in a non-contact state due to the negative pressure generated by the swirling flow. In the above-described embodiment, the suction holding device that sucks the pins 71 provided on the front wall 28 by the action of the substantially vacuum pressure is used, and the wafer 1 positioned inside the front wall 28 by the hand portion 20D of the transfer robot 15 is used. The wafer 1 may be mounted on the front wall 28 by adsorbing the peripheral edge of the back surface 3 to the pins 71. In this case, since the wafer holding device 24 and the holding device cylinder 78 can be omitted, the structure of the cleaning device 11 can be simplified and the operation of the cleaning device 11 can be facilitated.

また、上記第２の実施の形態においても、搬送用ロボット１５のハンド部２０Ｄにより正面壁２８の内側に位置づけられたウエハ１を、正面壁２８の外側からこの正面壁２８と共に、略真空圧の作用により吸引する吸引保持装置を設け、これにより、ウエハ１の裏面３の周縁部を、正面壁２８の内面におけるシール部材３１に密着させて、当該ウエハ１を正面壁２８に装着させるようにしてもよい。この場合にも、吸引保持装置とウエハ１の裏面３とが非接触状態となるので、吸引保持装置によってウエハ１の裏面３が汚染されることを防止できる。   Also in the second embodiment, the wafer 1 positioned on the inner side of the front wall 28 by the hand portion 20D of the transfer robot 15 is moved to a substantially vacuum pressure together with the front wall 28 from the outer side of the front wall 28. A suction holding device that sucks by action is provided, whereby the peripheral portion of the back surface 3 of the wafer 1 is brought into close contact with the seal member 31 on the inner surface of the front wall 28 so that the wafer 1 is mounted on the front wall 28. Also good. Also in this case, since the suction holding device and the back surface 3 of the wafer 1 are in a non-contact state, the back surface 3 of the wafer 1 can be prevented from being contaminated by the suction holding device.

また、上記実施の形態では、本発明に係る装置を洗浄装置として説明したが、本発明に係る装置について、洗浄工程を省略し、洗浄槽２３を乾燥槽と捉え乾燥装置として利用することも可能であり、ウエハ１をウエハ保持装置２４により縦方向に起立した状態で乾燥出来るので、乾燥槽ひいては乾燥装置全体の省スペース化を実現できる。   In the above embodiment, the apparatus according to the present invention has been described as a cleaning apparatus. However, with respect to the apparatus according to the present invention, it is possible to omit the cleaning step and use the cleaning tank 23 as a drying tank and use it as a drying apparatus. In addition, since the wafer 1 can be dried in a state where the wafer 1 is erected in the vertical direction by the wafer holding device 24, it is possible to realize a space saving of the drying tank and the entire drying device.

本発明に係る洗浄装置の一実施の形態が備えられた洗浄設備を、一部を切り欠いて示す斜視図である。1 is a perspective view showing a cleaning facility provided with an embodiment of a cleaning apparatus according to the present invention, with a part cut away. 図１の洗浄装置の待機状態を、斜め正面側から目視して示す斜視図である。It is a perspective view which shows the standby state of the washing | cleaning apparatus of FIG. 1 visually viewing from the diagonal front side. 図１の洗浄装置の待機状態を、斜め背面側から目視して示す斜視図である。It is a perspective view which shows the standby state of the washing | cleaning apparatus of FIG. 1 visually viewing from the diagonal back side. 図２の洗浄装置のウエハ搬入出状態を示す正面図である。It is a front view which shows the wafer carrying in / out state of the washing | cleaning apparatus of FIG. 図４のV矢視図である。FIG. 5 is a view taken in the direction of arrow V in FIG. 4. 図２の洗浄装置のウエハ受け渡し状態を示す側面図である。It is a side view which shows the wafer delivery state of the washing | cleaning apparatus of FIG. 図２の洗浄装置のウエハセット状態またはウエハ乾燥状態を示す正面図である。It is a front view which shows the wafer set state or wafer dry state of the washing | cleaning apparatus of FIG. 図７のVIII矢視図である。It is a VIII arrow line view of FIG. 図２の洗浄装置のウエハ洗浄状態またはウエハリンス状態を示す側面図である。It is a side view which shows the wafer cleaning state or wafer rinse state of the cleaning apparatus of FIG. 図８の一部を拡大して示す断面図である。It is sectional drawing which expands and shows a part of FIG. 図１０の正面壁における開口周囲を示す斜視図である。It is a perspective view which shows the opening periphery in the front wall of FIG. 図２の洗浄装置におけるウエハ保持装置を、保持装置用シリンダと共に示す斜視図である。It is a perspective view which shows the wafer holding device in the washing | cleaning apparatus of FIG. 2 with the cylinder for holding devices. 図２の洗浄装置の原理を説明するための概略構成を示す断面図である。It is sectional drawing which shows schematic structure for demonstrating the principle of the washing | cleaning apparatus of FIG. 図１０の一部を拡大するとともにＩＰＡベーパーの流れを示す断面図である。It is sectional drawing which expands a part of FIG. 10 and shows the flow of an IPA vapor. 図１３の一部を拡大するとともに洗浄液又はリンス液の流れを示す断面図である。It is sectional drawing which expands a part of FIG. 13 and shows the flow of a washing | cleaning liquid or a rinse liquid. 図２の洗浄装置における動作の一部を示すフローチャートである。It is a flowchart which shows a part of operation | movement in the washing | cleaning apparatus of FIG. 図２の洗浄装置における動作の残部を示すフローチャートである。It is a flowchart which shows the remaining part of operation | movement in the washing | cleaning apparatus of FIG. 洗浄装置の待機状態を、斜め正面側から目視して示す斜視図である。It is a perspective view which shows the standby state of a washing | cleaning apparatus visually viewing from the diagonal front side. 図１８の洗浄装置のウエハ搬入出状態を示す側面図である。It is a side view which shows the wafer carrying in / out state of the washing | cleaning apparatus of FIG. 図１８の洗浄装置におけるウエハの洗浄等の処理状態を示す正面図である。FIG. 19 is a front view illustrating a processing state such as wafer cleaning in the cleaning apparatus of FIG. 18. 図２０のVII矢視図である。It is a VII arrow line view of FIG. 図２の洗浄装置の原理を説明するための概略構成を示す断面図である。It is sectional drawing which shows schematic structure for demonstrating the principle of the washing | cleaning apparatus of FIG. 図２２の一部を拡大して示す断面図である。It is sectional drawing which expands and shows a part of FIG. 従来の洗浄装置を示す概略断面図である。It is a schematic sectional drawing which shows the conventional washing | cleaning apparatus.

符号の説明Explanation of symbols

１ ウエハ（被処理物）
２ 表面
３ 裏面
１１ 洗浄装置
１２ 洗浄装置配置部
２３ 洗浄槽
２３Ａ 洗浄槽構成部
２４ ウエハ保持装置（保持手段）
２４ａ カバー
２５ 超音波振動装置
２６ 第１オーバーフロー槽
２７ 乾燥用流体供給槽
２８ 正面壁（一側壁）
２９ 装置躯体
３０ 開口
３０Ｒ 開口の軸方向
４６ カバー
４６ａ シール部材
４８ 乾燥用流体供給孔
４９ 洗浄槽給液口
５６ ２流体ノズル
５７ 純水ノズル
５８ ガス供給部
５９ 有機溶剤供給口
５９ａ パイプ
５９ｂ ラバーヒーター
６０ 不活性ガス供給口
６２ ガス排気口
７１ ピン(隙間形成部材)
７２ 環状隙間
７３ 受け部材
７８ 保持装置用シリンダ
８０ 第２オーバーフロー槽
９０ 洗浄装置 1 Wafer (object to be processed)
DESCRIPTION OF SYMBOLS 2 Front surface 3 Back surface 11 Cleaning apparatus 12 Cleaning apparatus arrangement | positioning part 23 Cleaning tank 23A Cleaning tank structure part 24 Wafer holding device (holding means)
24a cover 25 ultrasonic vibration device 26 first overflow tank 27 fluid supply tank for drying 28 front wall (one side wall)
DESCRIPTION OF SYMBOLS 29 Apparatus housing 30 Opening 30R Axial direction of opening 46 Cover 46a Seal member 48 Drying fluid supply hole 49 Cleaning tank liquid supply port 56 Two-fluid nozzle 57 Pure water nozzle 58 Gas supply part 59 Organic solvent supply port 59a Pipe 59b Rubber heater 60 Inert gas supply port 62 Gas exhaust port 71 Pin (gap forming member)
72 Annular gap 73 Receiving member 78 Cylinder for holding device 80 Second overflow tank 90 Cleaning device

Claims (35)

洗浄槽内の洗浄用流体により、当該洗浄槽に配設された被処理物を洗浄またはリンスする洗浄装置であって、
装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、
この一側壁の外側から上記開口を通して、上記一側壁の内側に搬入された上記被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とする保持手段と、
上記一側壁の内面における上記開口周囲に設けられ、上記被処理物の裏面が接触することで、この被処理物と上記開口周囲との間に隙間を形成する隙間形成部材と、を有することを特徴とする洗浄装置。 A cleaning apparatus for cleaning or rinsing an object disposed in the cleaning tank with a cleaning fluid in the cleaning tank,
A side wall in which an opening corresponding to the outer shape of the object to be processed is formed, in contact with an apparatus housing to constitute the cleaning tank,
A holding means for allowing the back surface of the object to be processed carried into the inside of the one side wall through the opening from the outside of the one side wall to stand upright in a vertical direction;
A gap forming member that is provided around the opening on the inner surface of the one side wall, and that forms a gap between the object to be processed and the periphery of the opening by contacting the back surface of the object to be processed. Characteristic cleaning device. 上記一側壁の開口周囲と、縦方向に起立して配設された被処理物との間の隙間は、上方部分が下方部分よりも広く設定されたことを特徴とする請求項１に記載の洗浄装置。   2. The gap between the periphery of the opening of the one side wall and the workpiece disposed upright in the vertical direction is set such that the upper part is set wider than the lower part. Cleaning device. 上記洗浄装置には、被処理物に対向すると共に平行して、超音波振動装置が配置されたことを特徴とする請求項1または２に記載の洗浄装置。   The cleaning apparatus according to claim 1, wherein an ultrasonic vibration device is disposed in the cleaning apparatus so as to face and be parallel to the object to be processed. 上記一側壁は、装置躯体に対し開口の軸方向に移動可能に構成され、この一側壁の上記装置躯体からの離反時に被処理物が搬入されて保持手段により保持され、上記一側壁と上記装置躯体との当接により洗浄槽が構成されることを特徴とする請求項１乃至３のいずれかに記載の洗浄装置。   The one side wall is configured to be movable in the axial direction of the opening with respect to the apparatus housing, and when the one side wall is separated from the apparatus housing, a workpiece is loaded and held by a holding means, and the one side wall and the apparatus The cleaning apparatus according to any one of claims 1 to 3, wherein the cleaning tank is configured by contact with the housing. 上記保持手段は、旋回流により発生する負圧の作用で、被処理物の裏面を非接触状態で保持することを特徴とする請求項１乃至４のいずれかに記載の洗浄装置。   The cleaning apparatus according to any one of claims 1 to 4, wherein the holding means holds the back surface of the object to be processed in a non-contact state by the action of a negative pressure generated by the swirling flow. 上記保持手段は、一側壁に対し開口の軸方向に相対移動可能に当該一側壁に設置され、洗浄槽内に洗浄用流体が供給されたときに被処理物から退避して、この被処理物の保持を解除するよう構成されたことを特徴とする請求項５に記載の洗浄装置。   The holding means is installed on the one side wall so as to be relatively movable in the axial direction of the opening with respect to the one side wall. When the cleaning fluid is supplied into the cleaning tank, the holding means is retracted from the object to be processed. The cleaning apparatus according to claim 5, wherein the cleaning apparatus is configured to release the holding. 上記一側壁には、内面における開口周囲の下部に受け部材が設置され、この受け部材が、被処理物を点接触状態で支持することを特徴とする請求項１乃至６のいずれかに記載の洗浄装置。   A receiving member is installed in the lower part of the inner surface around the opening on the inner wall, and the receiving member supports the object to be processed in a point contact state. Cleaning device. 上記洗浄槽内へは、この洗浄槽の外部に設置されたフィルタによりろ過された洗浄用流体が循環して供給されることを特徴とする請求項１乃至７のいずれかに記載の洗浄装置。   The cleaning apparatus according to any one of claims 1 to 7, wherein a cleaning fluid filtered by a filter installed outside the cleaning tank is circulated and supplied into the cleaning tank. 上記洗浄槽には、乾燥用流体を洗浄槽内へ導く乾燥用流体供給槽が連設されたことを特徴とする請求項１乃至８のいずれかに記載の洗浄装置。   9. The cleaning apparatus according to claim 1, wherein a drying fluid supply tank for guiding the drying fluid into the cleaning tank is connected to the cleaning tank. 上記乾燥用流体供給層は、高温の有機溶剤及び不活性ガスが供給される２流体ノズルを備え、上記有機溶剤及び不活性ガスの温度は、上記２流体ノズルからの流体の噴射と同時に上記流体が気化し得る温度であることを特徴とする請求項９に記載の洗浄装置。   The drying fluid supply layer includes a two-fluid nozzle to which a high-temperature organic solvent and an inert gas are supplied, and the temperature of the organic solvent and the inert gas is the same as that of the fluid ejected from the two-fluid nozzle. The cleaning apparatus according to claim 9, wherein the temperature is a vaporizable temperature. 上記有機溶剤は、２流体ノズルに接続されるパイプに巻き付けられた面状発熱体によって加熱されることを特徴とする請求項１０記載の洗浄装置。   11. The cleaning apparatus according to claim 10, wherein the organic solvent is heated by a planar heating element wound around a pipe connected to a two-fluid nozzle. 上記乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とする請求項９に記載の洗浄装置。   The cleaning apparatus according to claim 9, wherein the drying fluid uses an organic solvent vapor and then a heated inert gas. 被処理物を洗浄槽内に搬入し、この被処理物の表面を上記洗浄槽内に、裏面を上記洗浄槽外にそれぞれ臨ませ、当該被処理物と上記洗浄槽との間に隙間を設けて、この被処理物を上記洗浄槽に装着する被処理物搬入工程と、
上記洗浄槽内で洗浄用流体を流動させ、この洗浄用流体に接液する上記被処理物の上記表面を、当該洗浄用流体により洗浄またはリンスすると共に、上記洗浄槽内の洗浄用流体の圧力の作用で上記隙間から流出する洗浄用流体によって、上記被処理物の裏面を洗浄またはリンスする洗浄・リンス工程と、を有することを特徴とする洗浄方法。 The object to be processed is carried into the cleaning tank, the surface of the object to be processed is placed in the cleaning tank, and the back surface is exposed to the outside of the cleaning tank, and a gap is provided between the object to be processed and the cleaning tank. A process object carrying-in step of mounting the process object in the cleaning tank,
The cleaning fluid is caused to flow in the cleaning tank, and the surface of the object to be treated that is in contact with the cleaning fluid is cleaned or rinsed with the cleaning fluid, and the pressure of the cleaning fluid in the cleaning tank is set. And a cleaning / rinsing process for cleaning or rinsing the back surface of the object to be processed with the cleaning fluid flowing out of the gap by the action of the above. 上記洗浄・リンス工程の終了後に、被処理物を洗浄槽内に装着した状態で乾燥用流体を洗浄槽内へ導き、上記被処理物を乾燥する乾燥工程を有することを特徴とする請求項１３に記載の洗浄方法。   14. The method according to claim 13, further comprising a drying step of guiding the drying fluid into the cleaning tank in a state where the object to be processed is mounted in the cleaning tank after the cleaning / rinsing process is completed, and drying the object to be processed. The cleaning method according to 1. 上記洗浄・リンス工程では、洗浄槽に装着された被処理物に対向して平行に設置された超音波振動装置からの超音波を用いて洗浄を実施することを特徴とする請求項１３または１４に記載の洗浄方法。   15. The cleaning and rinsing step is performed by using ultrasonic waves from an ultrasonic vibration device installed in parallel to face an object to be processed mounted in a cleaning tank. The cleaning method according to 1. 上記乾燥工程では、乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とする請求項１４に記載の洗浄方法。   15. The cleaning method according to claim 14, wherein, in the drying step, an organic solvent vapor is first used as a drying fluid, and then a heated inert gas is used. 装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、
この一側壁の外側から上記開口を通して、上記一側壁の内側に搬入された上記被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とする保持手段とを有し、洗浄槽内の洗浄用流体により、当該洗浄槽に配設された被処理物を洗浄またはリンスする洗浄装置において、
上記保持手段は、旋回流により発生する負圧の作用で、被処理物の裏面を非接触状態で保持することを特徴とする保持手段。 A side wall in which an opening corresponding to the outer shape of the object to be processed is formed, in contact with an apparatus housing to constitute the cleaning tank,
A holding means for holding the back surface of the object to be processed carried into the inside of the one side wall through the opening from the outside of the one side wall, In the cleaning apparatus for cleaning or rinsing the object to be processed disposed in the cleaning tank with the cleaning fluid in the tank,
The holding means holds the back surface of the object to be processed in a non-contact state by the action of negative pressure generated by the swirling flow. 乾燥槽内の乾燥用流体により、当該乾燥槽に配設された被処理物を乾燥する乾燥装置であって、
装置躯体に当接して上記乾燥槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、
この一側壁の外側から上記開口を通して、上記一側壁の内側に搬入された上記被処理物の裏面を保持可能として、この被処理物を縦方向に起立状態とする保持手段と、
上記一側壁の内面における上記開口周囲に設けられ、上記被処理物の裏面が接触することで、この被処理物と上記開口周囲との間に隙間を形成する隙間形成部材と、を有することを特徴とする乾燥装置。 A drying device for drying an object to be processed disposed in the drying tank by a drying fluid in the drying tank,
A side wall in which an opening corresponding to the outer shape of the object to be processed is formed, in contact with an apparatus housing to constitute the drying tank,
A holding means for allowing the back surface of the object to be processed carried into the inside of the one side wall through the opening from the outside of the one side wall to stand upright in a vertical direction;
A gap forming member that is provided around the opening on the inner surface of the one side wall, and that forms a gap between the object to be processed and the periphery of the opening by contacting the back surface of the object to be processed. Feature drying equipment. 上記乾燥槽には、乾燥用流体を乾燥槽内へ導く乾燥用流体供給槽が連設されたことを特徴とする請求項１８に記載の乾燥装置。   The drying apparatus according to claim 18, wherein a drying fluid supply tank for guiding the drying fluid into the drying tank is connected to the drying tank. 上記乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とする請求項１８または１９に記載の乾燥装置。   The drying apparatus according to claim 18 or 19, wherein a vapor of an organic solvent is used as the drying fluid, and then a heated inert gas is used. 洗浄槽内の洗浄液により、当該洗浄槽内に配設された被処理物を洗浄する洗浄装置であって、
装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁を有し、
上記被処理物が縦方向に起立し、且つ上記被処理物の処理面と反対の面の周縁部が上記一側壁の内面における上記開口周囲に密着されて上記開口が閉塞され、上記被処理物が上記処理面を上記洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれに臨ませて当該洗浄槽に装着される構成としたことを特徴とする洗浄装置。 A cleaning device for cleaning an object disposed in the cleaning tank with a cleaning liquid in the cleaning tank,
The cleaning tank is configured in contact with the apparatus housing, and has one side wall in which an opening corresponding to the outer shape of the workpiece is formed,
The workpiece is erected in the vertical direction, and the peripheral edge of the surface opposite to the processing surface of the workpiece is brought into close contact with the periphery of the opening on the inner surface of the one side wall to close the opening, and the workpiece The cleaning apparatus is configured to be mounted in the cleaning tank with the processing surface in the cleaning tank and the surface opposite to the processing surface facing the outside of the cleaning tank. 洗浄槽内の洗浄液により、当該洗浄槽内に配設された被処理物を洗浄する洗浄装置であって、
装置躯体に当接して上記洗浄槽を構成すると共に、上記被処理物の外形に対応する開口が形成された一側壁と、
上記被処理物の処理面と反対の面を、上記洗浄槽の外側から上記開口を通して保持する保持手段とを有し、
この保持手段により、上記被処理物が縦方向に起立し、且つ上記処理面と反対の面の周縁部が上記一側壁の内面における上記開口周囲に密着されて上記開口が閉塞され、上記被処理物が上記処理面を上記洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれに臨ませて当該洗浄槽に装着される構成としたことを特徴とする洗浄装置。 A cleaning device for cleaning an object disposed in the cleaning tank with a cleaning liquid in the cleaning tank,
A side wall in which an opening corresponding to the outer shape of the object to be processed is formed, in contact with an apparatus housing to constitute the cleaning tank,
Holding means for holding the surface opposite to the processing surface of the object to be processed through the opening from the outside of the cleaning tank;
By this holding means, the object to be processed rises in the vertical direction, and the peripheral portion of the surface opposite to the processing surface is brought into close contact with the periphery of the opening on the inner surface of the one side wall, thereby closing the opening, and the processing object A cleaning apparatus characterized in that an object is mounted on the cleaning tank with the processing surface facing the cleaning tank and the surface opposite to the processing surface facing the outside of the cleaning tank. 上記洗浄槽内へは、この洗浄槽の外部に設置されたフィルタによりろ過された洗浄液が循環して供給されることを特徴とする請求項２1または２２に記載の洗浄装置。   23. The cleaning apparatus according to claim 21, wherein a cleaning liquid filtered by a filter installed outside the cleaning tank is circulated and supplied into the cleaning tank. 上記洗浄装置には、被処理物に対向すると共に平行して、超音波振動装置が配置されたことを特徴とする請求項２１乃至２３のいずれかに記載の洗浄装置。   The cleaning apparatus according to any one of claims 21 to 23, wherein an ultrasonic vibration device is disposed in the cleaning apparatus so as to face and be parallel to the object to be processed. 上記一側壁は、装置躯体に対し開口の軸方向に移動可能に構成され、この一側壁の上記装置躯体からの離反時に被処理物が搬入されて保持手段により上記一側壁に装着され、この一側壁と上記装置躯体との当接により洗浄槽が構成されることを特徴とする請求項２１乃至２４のいずれかに記載の洗浄装置。   The one side wall is configured to be movable in the axial direction of the opening with respect to the apparatus housing. When the one side wall is separated from the apparatus housing, a workpiece is loaded and attached to the one side wall by a holding unit. The cleaning apparatus according to any one of claims 21 to 24, wherein a cleaning tank is configured by contact between the side wall and the apparatus housing. 上記保持手段は、旋回流により発生する負圧の作用で、被処理物の処理面と反対の面を非接触状態で保持することを特徴とする請求項２２乃至２５のいずれかに記載の洗浄装置。   The cleaning device according to any one of claims 22 to 25, wherein the holding means holds the surface opposite to the processing surface of the object to be processed in a non-contact state by the action of the negative pressure generated by the swirling flow. apparatus. 上記洗浄槽には、乾燥用流体を洗浄槽内へ導く乾燥用流体供給槽が連設されたことを特徴とする請求項２１乃至２６のいずれかに記載の洗浄装置。   27. The cleaning apparatus according to claim 21, wherein a drying fluid supply tank that guides the drying fluid into the cleaning tank is connected to the cleaning tank. 上記乾燥用流体供給層は、高温の有機溶剤及び不活性ガスが供給される２流体ノズルを備え、上記有機溶剤及び不活性ガスの温度は、上記２流体ノズルからの流体の噴射と同時に上記流体が気化し得る温度であることを特徴とする請求項２７に記載の洗浄装置。   The drying fluid supply layer includes a two-fluid nozzle to which a high-temperature organic solvent and an inert gas are supplied, and the temperature of the organic solvent and the inert gas is the same as that of the fluid ejected from the two-fluid nozzle. The cleaning apparatus according to claim 27, wherein the temperature is a temperature at which vaporization is possible. 上記有機溶剤は、２流体ノズルに接続されるパイプに巻き付けられた面状発熱体によって加熱されることを特徴とする請求項２８記載の洗浄装置。   29. The cleaning device according to claim 28, wherein the organic solvent is heated by a planar heating element wound around a pipe connected to a two-fluid nozzle. 上記乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とする請求項２９に記載の洗浄装置。   30. The cleaning apparatus according to claim 29, wherein a vapor of an organic solvent is first used as the drying fluid, and then a heated inert gas is used. 被処理物を洗浄槽内に搬入し、この被処理物の処理面を上記洗浄槽内に、上記処理面と反対の面を上記洗浄槽外にそれぞれ臨ませて、当該被処理物を上記洗浄槽に装着する被処理物搬入工程と、
上記洗浄槽内で洗浄液を流動させ、この洗浄液に接液する上記被処理物の上記処理面を洗浄する洗浄工程とを有することを特徴とする洗浄方法。 The object to be processed is carried into the cleaning tank, the processing surface of the object to be processed is exposed to the cleaning tank, and the surface opposite to the processing surface is exposed to the outside of the cleaning tank. A process for carrying in a workpiece to be installed in the tank;
A cleaning method comprising: flowing a cleaning liquid in the cleaning tank and cleaning the processing surface of the object to be processed in contact with the cleaning liquid. 上記洗浄工程の終了後に、被処理物を洗浄槽内に装着した状態で乾燥用流体を洗浄槽内へ導き、上記被処理物を乾燥する乾燥工程を有することを特徴とする請求項３１に記載の洗浄方法。   32. The method according to claim 31, further comprising a drying step of guiding the drying fluid into the cleaning tank in a state where the object to be processed is mounted in the cleaning tank after the cleaning process is completed, and drying the object to be processed. Cleaning method. 上記洗浄工程では、洗浄槽外に設置されたフィルタと上記洗浄槽との間で洗浄液を循環することを特徴とする請求項３１または３２に記載の洗浄方法。   The cleaning method according to claim 31 or 32, wherein in the cleaning step, a cleaning liquid is circulated between a filter installed outside the cleaning tank and the cleaning tank. 上記洗浄工程では、洗浄槽に装着された被処理物に対向して平行に設置された超音波振動装置からの超音波を用いて洗浄を実施することを特徴とする請求項３１乃至３３のいずれかに記載の洗浄方法。   34. The cleaning process according to any one of claims 31 to 33, wherein the cleaning is performed using ultrasonic waves from an ultrasonic vibration device installed in parallel to face the workpiece mounted on the cleaning tank. A cleaning method according to claim 1. 上記乾燥工程では、乾燥用流体として、まず有機溶剤のベーパーを用い、次に加熱された不活性ガスを用いることを特徴とする請求項３１乃至３４のいずれかに記載の洗浄方法。

The cleaning method according to any one of claims 31 to 34, wherein in the drying step, a vapor of an organic solvent is first used as a drying fluid, and then a heated inert gas is used.

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