JP2007052128A - 液晶表示素子 - Google Patents
液晶表示素子 Download PDFInfo
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- JP2007052128A JP2007052128A JP2005236013A JP2005236013A JP2007052128A JP 2007052128 A JP2007052128 A JP 2007052128A JP 2005236013 A JP2005236013 A JP 2005236013A JP 2005236013 A JP2005236013 A JP 2005236013A JP 2007052128 A JP2007052128 A JP 2007052128A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 37
- 230000008439 repair process Effects 0.000 claims abstract description 58
- 239000010410 layer Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 abstract description 4
- 230000007547 defect Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Abstract
【解決手段】 本発明を適用したFFSモードLCDの単位画素は、ゲート電極18とドレイン電極28とが重畳する部分に対応する板状(べた状)のコモン電極8上の領域に、第1リペア領域46としてリペア用開口部が設けられた構造となっている。
【選択図】図2
Description
図1は、第1実施例における単位画素の構造を示した正面図である。図1に示した本発明を適用したFFSモードLCDの単位画素領域には、ゲートライン2とデータライン4とが交差する部分にTFT12が配置され、TFT12に接続する形で画素電極6が配置されている。そして、TFT12は、ゲート電極、ソース電極、及びドレイン電極を含んで構成される。TFT12の構造は、図4及び図5に示したTFT74と同様であるため説明を省略する。また、板状(べた状)のコモン電極8が液晶パネルの全面に形成されており、コモン電極8の端部の任意の箇所からコモン電圧を供給することが可能なため、コモン線を必要としない構造となっている。
本実施例におけるFFSモードLCDの単位画素は、上記第1実施例の板状のコモン電極の上にもう1層のコモン電極を設け、コモン電極を2層備えた構造となっている。但し、上記第1実施例と共通する部分については、図中に同じ符号番号を付して説明を省略する。
4 ソースライン
18 ゲート電極
28 ドレイン電極
32 ソース電極
6 画素電極
8 板状(べた状)のコモン電極
12 TFT
14 リペア用開口部
46 第1リペア領域
48 第2層目のコモン電極
52 第2リペア領域
Claims (4)
- 複数個の液晶分子から成る液晶層を介し、所定の間隔を置き対向して配置される一対の透明絶縁基板と、
前記一対の透明絶縁基板の一方の基板上に形成され、各単位画素を限定するようにマトリックス形態で配置される複数のゲートライン及びデータラインと、
前記各単位画素に配置され、透明導電体から成る画素電極と、
前記画素電極とともにフリンジフィールドを形成するように配置され、透明導電体から成るコモン電極と、
前記ゲートラインと前記データラインとが交差する部分に配置され、ゲート電極、ソース電極、及びドレイン電極を含んで成る薄膜トランジスタとを含み、
前記ドレイン電極のリペア箇所に対応する前記コモン電極上の領域に開口部が設けられていることを特徴とする液晶表示素子。 - 複数個の液晶分子から成る液晶層を介し、所定の間隔を置き対向して配置される一対の透明絶縁基板と、
前記一対の透明絶縁基板の一方の基板上に形成され、各単位画素を限定するようにマトリックス形態で配置される複数のゲートライン及びデータラインと、
前記各単位画素に配置され、透明導電体から成る画素電極と、
前記画素電極とともにフリンジフィールドを形成するように配置され、透明導電体から成るコモン電極と、
前記ゲートラインと前記データラインとが交差する部分に配置され、ゲート電極、ソース電極、及びドレイン電極を含んで成る薄膜トランジスタとを含み、
前記ドレイン電極を含む領域に対応する前記コモン電極上の領域に開口部が設けられていることを特徴とする液晶表示素子。 - 前記コモン電極は、前記データライン及びゲートラインが配置された基板の全面に平板状に配置されていることを特徴とする請求項1又は2に記載の液晶表示素子。
- 前記コモン電極は、
前記データライン及びゲートラインが配置された基板の全面に平板状に配置されている第1コモン電極と、
前記第1コモン電極の上に絶縁層を挟んで配置され、該絶縁層が有するコンタクトホールを介して前記第1コモン電極に接続されている第2コモン電極と、
の2層構造であることを特徴とする請求項1又は2に記載の液晶表示素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005236013A JP5148819B2 (ja) | 2005-08-16 | 2005-08-16 | 液晶表示素子 |
KR1020050084790A KR101244664B1 (ko) | 2005-08-16 | 2005-09-12 | 액정표시소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005236013A JP5148819B2 (ja) | 2005-08-16 | 2005-08-16 | 液晶表示素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007052128A true JP2007052128A (ja) | 2007-03-01 |
JP5148819B2 JP5148819B2 (ja) | 2013-02-20 |
Family
ID=37916631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005236013A Expired - Fee Related JP5148819B2 (ja) | 2005-08-16 | 2005-08-16 | 液晶表示素子 |
Country Status (2)
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JP (1) | JP5148819B2 (ja) |
KR (1) | KR101244664B1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090310053A1 (en) * | 2008-06-16 | 2009-12-17 | Sony Corporation | Liquid crystal display device |
JP2010066396A (ja) * | 2008-09-09 | 2010-03-25 | Toshiba Mobile Display Co Ltd | 液晶表示装置 |
JP2010145667A (ja) * | 2008-12-18 | 2010-07-01 | Ips Alpha Technology Ltd | 液晶表示装置及びその点欠陥修正方法 |
JP2012155073A (ja) * | 2011-01-25 | 2012-08-16 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板及びその製造方法、並びに液晶表示装置 |
JP2013117644A (ja) * | 2011-12-02 | 2013-06-13 | Japan Display Central Co Ltd | 平面表示装置用アレイ基板及びその製造方法 |
JP2013137386A (ja) * | 2011-12-28 | 2013-07-11 | Japan Display Central Co Ltd | 液晶表示装置 |
KR101350655B1 (ko) | 2007-05-28 | 2014-01-13 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판 및 그의 형성방법과 리페어 방법 |
CN104503174A (zh) * | 2014-12-24 | 2015-04-08 | 合肥京东方光电科技有限公司 | Goa电路模块及其测试方法、显示面板和显示装置 |
US10649294B2 (en) | 2017-11-08 | 2020-05-12 | Sharp Kabushiki Kaisha | Display device |
US10712624B2 (en) | 2018-07-24 | 2020-07-14 | Sharp Kabushiki Kaisha | Method for producing active matrix substrate and active matrix substrate |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8469456B2 (en) | 2009-03-25 | 2013-06-25 | Wirtgen Gmbh | Ejector unit for a road milling machine or the like |
KR102029389B1 (ko) * | 2011-09-02 | 2019-11-08 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 평판표시장치 및 그 제조방법 |
KR102188067B1 (ko) * | 2014-05-27 | 2020-12-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이의 제조 방법 |
KR102261760B1 (ko) | 2014-07-29 | 2021-06-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
Citations (3)
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JP2002244158A (ja) * | 2000-12-01 | 2002-08-28 | Hyundai Display Technology Inc | Ffsモードの液晶表示装置及びその製造方法 |
JP2004078035A (ja) * | 2002-08-21 | 2004-03-11 | Chi Mei Electronics Corp | Ips液晶ディスプレイおよび輝点画素の滅点画素化方法 |
JP2005062276A (ja) * | 2003-08-20 | 2005-03-10 | Chi Mei Electronics Corp | Ips液晶ディスプレイ及び輝点の滅点化方法 |
Family Cites Families (3)
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---|---|---|---|---|
KR100341123B1 (ko) * | 1997-12-29 | 2002-12-18 | 주식회사 현대 디스플레이 테크놀로지 | 고투과율및고개구율을갖는액정표시장치및그제조방법 |
TW575775B (en) * | 2001-01-29 | 2004-02-11 | Hitachi Ltd | Liquid crystal display device |
TWI298110B (en) * | 2001-07-31 | 2008-06-21 | Hitachi Ltd | Liquid crystal display device |
-
2005
- 2005-08-16 JP JP2005236013A patent/JP5148819B2/ja not_active Expired - Fee Related
- 2005-09-12 KR KR1020050084790A patent/KR101244664B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002244158A (ja) * | 2000-12-01 | 2002-08-28 | Hyundai Display Technology Inc | Ffsモードの液晶表示装置及びその製造方法 |
JP2004078035A (ja) * | 2002-08-21 | 2004-03-11 | Chi Mei Electronics Corp | Ips液晶ディスプレイおよび輝点画素の滅点画素化方法 |
JP2005062276A (ja) * | 2003-08-20 | 2005-03-10 | Chi Mei Electronics Corp | Ips液晶ディスプレイ及び輝点の滅点化方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101350655B1 (ko) | 2007-05-28 | 2014-01-13 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판 및 그의 형성방법과 리페어 방법 |
TWI398708B (zh) * | 2008-06-16 | 2013-06-11 | Japan Display West Inc | Liquid crystal display device |
JP2009300891A (ja) * | 2008-06-16 | 2009-12-24 | Sony Corp | 液晶表示装置 |
US20090310053A1 (en) * | 2008-06-16 | 2009-12-17 | Sony Corporation | Liquid crystal display device |
JP4618336B2 (ja) * | 2008-06-16 | 2011-01-26 | ソニー株式会社 | 液晶表示装置 |
US8351007B2 (en) | 2008-06-16 | 2013-01-08 | Sony Corporation | Liquid crystal display device with enhanced brightness |
JP2010066396A (ja) * | 2008-09-09 | 2010-03-25 | Toshiba Mobile Display Co Ltd | 液晶表示装置 |
JP2010145667A (ja) * | 2008-12-18 | 2010-07-01 | Ips Alpha Technology Ltd | 液晶表示装置及びその点欠陥修正方法 |
JP2012155073A (ja) * | 2011-01-25 | 2012-08-16 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板及びその製造方法、並びに液晶表示装置 |
JP2013117644A (ja) * | 2011-12-02 | 2013-06-13 | Japan Display Central Co Ltd | 平面表示装置用アレイ基板及びその製造方法 |
US9082889B2 (en) | 2011-12-02 | 2015-07-14 | Japan Display Inc. | Array substrate for flat display device and manufacturing the same |
JP2013137386A (ja) * | 2011-12-28 | 2013-07-11 | Japan Display Central Co Ltd | 液晶表示装置 |
CN104503174A (zh) * | 2014-12-24 | 2015-04-08 | 合肥京东方光电科技有限公司 | Goa电路模块及其测试方法、显示面板和显示装置 |
US10649294B2 (en) | 2017-11-08 | 2020-05-12 | Sharp Kabushiki Kaisha | Display device |
US10712624B2 (en) | 2018-07-24 | 2020-07-14 | Sharp Kabushiki Kaisha | Method for producing active matrix substrate and active matrix substrate |
Also Published As
Publication number | Publication date |
---|---|
JP5148819B2 (ja) | 2013-02-20 |
KR20070021005A (ko) | 2007-02-22 |
KR101244664B1 (ko) | 2013-03-25 |
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