JP2007042773A - Photosensor and manufacturing method therefor - Google Patents

Photosensor and manufacturing method therefor Download PDF

Info

Publication number
JP2007042773A
JP2007042773A JP2005223879A JP2005223879A JP2007042773A JP 2007042773 A JP2007042773 A JP 2007042773A JP 2005223879 A JP2005223879 A JP 2005223879A JP 2005223879 A JP2005223879 A JP 2005223879A JP 2007042773 A JP2007042773 A JP 2007042773A
Authority
JP
Japan
Prior art keywords
substrate
divided
light receiving
receiving sensor
photosensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005223879A
Other languages
Japanese (ja)
Inventor
Eiichi Takami
栄一 高見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005223879A priority Critical patent/JP2007042773A/en
Publication of JP2007042773A publication Critical patent/JP2007042773A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a low price photosensor for which mass-production is possible. <P>SOLUTION: In the manufacturing method of the photosensor, a photosensor is accommodated within a package integrating substrate which can be divided into plate-type ceramic substrates forming wedges and scores, and the photosensor accommodated in the package integrating substrate and connected electrically is sealed tightly within the hollow part, in combination with a covering glass plate that is not subjected to division process. Thereafter, the covering glass that is not processed for division is then processed, to realize the division and is then divided into individual packages. The divisible covering glass substrate and plate-type ceramic substrate are combined, and thereafter, only the plate-type ceramic substrate is divided in order to divide individual packages. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、ＣＣＤ、ＣＭＯＳ等を用いた固体撮像装置、特に、二次元画像撮像素子の実装方法に関するものである。   The present invention relates to a solid-state imaging device using a CCD, a CMOS, or the like, and more particularly to a mounting method for a two-dimensional image imaging device.

従来、固体撮像素子をビデオカメラ、ディジタルスティルカメラ等の機器に搭載するためには、これら機器のプリント配線基板に半田付けをする目的からセラミックやプラスチックに端子を設けた容器に固体撮像素子を収納し、ガラス等の透光性の蓋（以下、「カバーガラス」という）で密閉封止する方法が広く用いられている。   Conventionally, in order to mount a solid-state image sensor on a device such as a video camera or a digital still camera, the solid-state image sensor is stored in a container provided with a terminal in ceramic or plastic for the purpose of soldering to the printed wiring board of these devices. A method of hermetically sealing with a light-transmitting lid such as glass (hereinafter referred to as “cover glass”) is widely used.

図４はこのような従来例の固体撮像装置を示す断面図である。   FIG. 4 is a sectional view showing such a conventional solid-state imaging device.

図４において、１は固体撮像素子チップであり、その一方の表面に受光部１ａや能動回路部（図示せず）等が形成されている。２は容器であり、固体撮像素子チップ１を気密封止すると共に機器へ組み込むための保持部材としての機能を持っている。通常、容器２はアルミナセラミック等の焼結体や、粉末シリカ等のフィラーを混錬したエポキシ樹脂等で成型され、複数の半田付用端子２ａが設けられている。   In FIG. 4, reference numeral 1 denotes a solid-state imaging device chip, on which one of the light receiving portion 1a and an active circuit portion (not shown) is formed. Reference numeral 2 denotes a container, which has a function as a holding member for hermetically sealing the solid-state image sensor chip 1 and incorporating it into a device. Usually, the container 2 is formed of a sintered body such as alumina ceramic, an epoxy resin kneaded with a filler such as powdered silica, and the like, and is provided with a plurality of soldering terminals 2a.

容器２の内部には、固体撮像素子チップ１が設けられ、固体撮像素子チップ１の電極と複数の半田付用端子２ａとが金属ワイヤ２ｂによって電気的に接続されている。更に、容器２の上部の開口部には、カバーガラス３が接着剤４で固定され、固体撮像素子チップ１は密閉封止されている。   A solid-state image sensor chip 1 is provided inside the container 2, and an electrode of the solid-state image sensor chip 1 and a plurality of soldering terminals 2a are electrically connected by metal wires 2b. Furthermore, a cover glass 3 is fixed to the opening at the top of the container 2 with an adhesive 4, and the solid-state image sensor chip 1 is hermetically sealed.

複数の凹部が形成された板状の基板にそれぞれの凹部に半導体チップを収納し、全面に板状のキャップ材を接着し、凹部材とキャップ材とを凹部間で同時に切断することが提案されている（例えば、特許文献１等）。
特開２０００−２８６３５４号公報 It has been proposed that a semiconductor chip is housed in each recess on a plate-like substrate having a plurality of recesses, a plate-like cap material is bonded to the entire surface, and the recess material and the cap material are simultaneously cut between the recesses. (For example, Patent Document 1).
JP 2000-286354 A

しかしながら、近年、機器の小型化、ローコスト化が要求されており、それに応えるものとして、これらの受光センサのパッケージを個々に組み立て方法では、加工コストや組み立てコストが高価になる問題がある。   However, in recent years, there has been a demand for downsizing and cost reduction of devices, and as a response to this, there is a problem that the processing cost and the assembly cost are high in the method of individually assembling these light receiving sensor packages.

本発明は、上記問題を解決するものであり、多数個生産が可能な、安価な受光センサを提供することを目的とする。   An object of the present invention is to solve the above-described problems and to provide an inexpensive light receiving sensor that can be produced in large numbers.

上記目的を達成するため、本発明は、基板上に設けられた少なくとも受光素子を含む半導体ＩＣと、前記半導体ＩＣの周囲を取り囲むように設けられた周壁と、前記基板と平行に設けられたカバーガラス板とを備えた受光センサのパッケージにおいて、前記半導体ＩＣを周壁が設けられた前記パッケージは分割が可能に加工してあるパッケージ集合基板と、前記分割が可能に加工されていないガラス板とを組み合わせ。パッケージ集合基板に収納され電気的に接続された受光センサを中空に気密封止する。その後に分割加工してないカバーガラスを分割が可能に加工し、前期半導体ＩＣの周囲を取り囲むように設けられた周壁を含む基板と分割加工を施したカバーガラスを同時に分割し、個々のパッケージを分割することを特徴とした受光センサである。   To achieve the above object, the present invention provides a semiconductor IC including at least a light receiving element provided on a substrate, a peripheral wall provided so as to surround the periphery of the semiconductor IC, and a cover provided in parallel to the substrate. In a package of a light receiving sensor comprising a glass plate, a package aggregate substrate in which the semiconductor IC is provided with a peripheral wall and the package aggregate substrate is processed so as to be capable of being divided, and the glass plate is not processed so as to be capable of being divided. combination. The light receiving sensor housed in the package aggregate substrate and electrically connected is hermetically sealed in the air. After that, the cover glass that has not been divided is processed so that it can be divided, and the substrate including the peripheral wall provided so as to surround the periphery of the previous semiconductor IC and the divided cover glass are divided at the same time, and individual packages are divided. The light receiving sensor is characterized by being divided.

本発明によれば、パッケージ集合基板と、カバーガラス板との組み合わせで、どちらか一方を分割が可能に加工し、組み合わせ後に分割未加工のどちらか一方の基板を分割加工することにより、前記半導体ＩＣの周囲を取り囲むように設けられた周壁を含む基板とカバーガラスを同時に分割し、個々のパッケージを分割することで、多数個生産が可能な、安価な受光センサを提供することができる。   According to the present invention, a combination of a package aggregate substrate and a cover glass plate is processed so that one of the substrates can be divided, and after the combination, either one of the undivided and processed substrates is divided and processed. By dividing the substrate including the peripheral wall provided so as to surround the IC and the cover glass at the same time and dividing the individual packages, it is possible to provide an inexpensive light receiving sensor that can be produced in large numbers.

以下に本発明の実施の形態を添付図面に基づいて説明する。   Embodiments of the present invention will be described below with reference to the accompanying drawings.

＜実施の形態１＞
図１は本発明の実施の形態１を説明するための断面図である。 <Embodiment 1>
FIG. 1 is a cross-sectional view for explaining Embodiment 1 of the present invention.

板状セラミック製パッケージ集合基板６で、受光センサ等半導体ＩＣの周囲を取り囲むように設けられた周壁が設けられており、パッケージ集合基板を分割するつことが可能に加工してある割れ目スナップフィット５が設けられている。   The plate-like ceramic package collective substrate 6 is provided with a peripheral wall provided so as to surround the periphery of the semiconductor IC such as a light receiving sensor, and the crack snap fit 5 is processed so that the package collective substrate can be divided. Is provided.

受光センサ等半導体ＩＣをパッケージ集合基板に収納し、
受光センサの電極とパッケージ集合基板に設けられた複数の半田付用端子２ａとワイヤーボンディング等によって電気的に接続されている。 A semiconductor IC such as a light receiving sensor is housed in a package assembly board,
The electrodes of the light receiving sensor and the plurality of soldering terminals 2a provided on the package assembly substrate are electrically connected by wire bonding or the like.

更に、パッケージ集合基板上部の開口部には、カバーガラス３が接着剤４（図示されていない）で固定され、固体撮像素子チップ１は密閉封止されている。電気的に接続された受光センサを中空に気密封止する。   Further, the cover glass 3 is fixed to the opening at the upper part of the package collective substrate with an adhesive 4 (not shown), and the solid-state imaging element chip 1 is hermetically sealed. The electrically connected light receiving sensor is hermetically sealed in the air.

カバーガラスには反射防止や赤外カットフィルター等の膜着きや水晶等の光学フィルターガラスでも切断加工することにより搭載できる。   The cover glass can be mounted by coating with a film such as an anti-reflection or infrared cut filter, or by cutting optical filter glass such as quartz.

分割加工されていないカバーガラス基板は個々のパッケージに位置合わせすることなく、受光センサ等半導体ＩＣの周囲を取り囲むように設けられた周壁上部に塗布された接着剤４でパッケージ集合基板の全面に貼り合せる。   The cover glass substrate that has not been divided is attached to the entire surface of the package assembly substrate with the adhesive 4 applied to the upper part of the peripheral wall provided so as to surround the periphery of the semiconductor IC such as the light receiving sensor without being aligned with each package. Match.

分割加工されていないカバーガラス基板は、パッケージ集合基板全面に貼り合わせ割れ目スナップフィット５の分割幅より大きく切断幅を取り、カバーガラス板厚寸法だけダイシング等で取り除き、その後は分割可能なセラミック基板の割れ目スナップフィット５を利用して分割する。   The cover glass substrate that has not been divided is bonded to the entire surface of the package assembly substrate, and the cutting width is larger than the division width of the split snap fit 5, and only the thickness of the cover glass plate is removed by dicing or the like. Split using the split snap fit 5.

パッケージ集合基板を個々のパッケージを分割することで、多数個生産が可能な、安価な受光センサを提供することができる。   By dividing the package assembly board into individual packages, it is possible to provide an inexpensive light receiving sensor that can be produced in large numbers.

＜実施の形態２＞
図２は本発明の実施の形態２を説明するための図である。 <Embodiment 2>
FIG. 2 is a diagram for explaining the second embodiment of the present invention.

板状セラミック製パッケージ集合基板６で、受光センサ等半導体ＩＣの周囲を取り囲むように設けられた周壁が設けられており、パッケージ集合基板を分割することが可能に加工してあるミシン目であるキャスターレイション７が設けられている。   The plate-like ceramic package aggregate substrate 6 is provided with a peripheral wall provided so as to surround the periphery of the semiconductor IC such as a light receiving sensor, and is a caster that is a perforation that is processed so that the package aggregate substrate can be divided. A rate 7 is provided.

受光センサ等半導体ＩＣをパッケージ集合基板に収納し、
受光センサの電極とパッケージ集合基板に設けられた複数の半田付用端子２ａとが電気的に接続されている。 A semiconductor IC such as a light receiving sensor is housed in a package assembly board,
The electrodes of the light receiving sensor and the plurality of soldering terminals 2a provided on the package aggregate substrate are electrically connected.

更に、パッケージ集合基板上部の開口部には、カバーガラス３が接着剤４（図示されていない）で固定され、固体撮像素子チップ１は密閉封止されている。電気的に接続された受光センサを中空に気密封止する。   Further, the cover glass 3 is fixed to the opening at the upper part of the package collective substrate with an adhesive 4 (not shown), and the solid-state imaging element chip 1 is hermetically sealed. The electrically connected light receiving sensor is hermetically sealed in the air.

ガラスには反射防止や赤外カットフィルター等の膜着きや水晶等の光学フィルターガラスでも切断加工することにより搭載できる。   The glass can be mounted by applying a film such as antireflection, infrared cut filter, or optical filter glass such as quartz.

分割加工されていないカバーガラス基板は個々のパッケージに位置合わせすることなく、受光センサ等半導体ＩＣの周囲を取り囲むように設けられた周壁上部に塗布された接着剤４でパッケージ集合基板の全面に貼り合せる。   The cover glass substrate that has not been divided is attached to the entire surface of the package assembly substrate with the adhesive 4 applied to the upper part of the peripheral wall provided so as to surround the periphery of the semiconductor IC such as the light receiving sensor without being aligned with each package. Match.

分割加工されていないカバーガラス基板は、パッケージ集合基板全面に貼り合わせキャスターレイション７より大きく切断幅を取り、カバーガラス板厚寸法をダイシング等で取り除き、その後は分割可能なセラミック基板のキャスターレイション７を利用して分割する。   The cover glass substrate that has not been divided is pasted on the entire surface of the package assembly substrate, has a larger cutting width than the caster ration 7, removes the cover glass plate thickness by dicing, and then casts the castable ceramic substrate 7 that can be divided. Use and divide.

パッケージ集合基板を個々のパッケージを分割することで、多数個生産が可能な、安価な受光センサを提供することができる。   By dividing the package assembly board into individual packages, it is possible to provide an inexpensive light receiving sensor that can be produced in large numbers.

図３は実施の形態２のキャスターレイション７を説明するための図である。   FIG. 3 is a diagram for explaining the caster 7 according to the second embodiment.

板状セラミック製パッケージ集合基板６で、受光センサ等半導体ＩＣの周囲を取り囲むように設けられた周壁が設けられており、パッケージ集合基板を分割することが可能に加工してあるミシン目であるキャスターレイション７が設けられている。   The plate-like ceramic package aggregate substrate 6 is provided with a peripheral wall provided so as to surround the periphery of the semiconductor IC such as a light receiving sensor, and is a caster that is a perforation that is processed so that the package aggregate substrate can be divided. A rate 7 is provided.

更に、分割加工をカバーガラス基板に用いた実施の形態について説明する。   Furthermore, an embodiment in which division processing is used for a cover glass substrate will be described.

カバーガラス基板をダイヤモンドカッターやダイシング等で貼り合せ以前に分割加工し、分割未加工のパッケージ集合基板全面に貼り合わせ、カバーガラス基板の分割幅より大きく切断幅を取り、分割未加工のパッケージ集合基板をダイシング等で取り除き、その後は分割可能なカバーガラス基板の分割加工を利用して分割する。   The cover glass substrate is divided and processed before bonding with a diamond cutter or dicing, and bonded to the entire surface of the unassembled package assembly substrate, and the cutting width is larger than the division width of the cover glass substrate. Is removed by dicing or the like, and thereafter, it is divided using a dividing process of a cover glass substrate that can be divided.

パッケージ集合基板を個々のパッケージを分割することで、多数個生産が可能な、安価な受光センサを提供することができる。   By dividing the package assembly board into individual packages, it is possible to provide an inexpensive light receiving sensor that can be produced in large numbers.

本発明の実施の形態１を説明するための断面図である。It is sectional drawing for demonstrating Embodiment 1 of this invention. 本発明の実施の形態２を説明するための断面図である。It is sectional drawing for demonstrating Embodiment 2 of this invention. 本発明の実施の形態２を説明するための平面図である。It is a top view for demonstrating Embodiment 2 of this invention. 従来の斜視図である。It is a conventional perspective view.

符号の説明Explanation of symbols

１ 受光センサ
２ａ 半田付用端子
３ カバーガラス
４ 接着剤４（一部図示されていない）
５ 割れ目スナップフィット
７ ミシン目であるキャスターレイション DESCRIPTION OF SYMBOLS 1 Light reception sensor 2a Soldering terminal 3 Cover glass 4 Adhesive 4 (some are not shown in figure)
5 Fracture snap fit 7 Caster that is perforation

Claims (2)

基板上に設けられた少なくとも受光素子を含む半導体ＩＣと、前記半導体ＩＣの周囲を取り囲むように設けられた周壁と、前記基板と平行にカバーガラスとを備えた受光センサの中空パッケージアレーにおいて、
前記半導体ＩＣの周壁が設けられた前記アレー基板と、前記カバーガラス基板とを組み合わせで、どちらか一方に分割可能な加工を施し、受光センサを中空に気密封止した後に、個々の中空パッケージに分割加工することを特徴とする受光センサ。 In a hollow package array of a light receiving sensor provided with a semiconductor IC including at least a light receiving element provided on a substrate, a peripheral wall provided so as to surround the periphery of the semiconductor IC, and a cover glass parallel to the substrate,
A combination of the array substrate provided with the peripheral wall of the semiconductor IC and the cover glass substrate is subjected to a process that can be divided into either one, and after the light receiving sensor is hermetically sealed in a hollow state, the individual hollow packages are formed. A light receiving sensor that is divided and processed. 請求項１の受光素子を含む半導体ＩＣの周囲を取り囲むように設けられた周壁を含む分割が可能に加工を施した基板、分割加工を施したカバーガラス基板のどちらか一方を分割が可能に加工を組み合わせの事前に施し、受光センサを中空に気密封止した後に、分割加工されていない基板若しくはカバーガラス基板を分割するための加工を実施し、前記基板とガラスを同時に分割し、個々のパッケージを分割することを特徴とする受光センサの製造方法。   A substrate that includes a peripheral wall provided so as to surround the periphery of the semiconductor IC including the light receiving element according to claim 1, and that can be divided into either a divided substrate or a cover glass substrate that has been divided. Are applied in advance, and after the light receiving sensor is hermetically sealed in a hollow state, the substrate and the glass cover are processed to be divided, and the substrate and the glass are simultaneously divided into individual packages. A method of manufacturing a light receiving sensor, wherein
JP2005223879A 2005-08-02 2005-08-02 Photosensor and manufacturing method therefor Withdrawn JP2007042773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005223879A JP2007042773A (en) 2005-08-02 2005-08-02 Photosensor and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005223879A JP2007042773A (en) 2005-08-02 2005-08-02 Photosensor and manufacturing method therefor

Publications (1)

Publication Number Publication Date
JP2007042773A true JP2007042773A (en) 2007-02-15

Family

ID=37800496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005223879A Withdrawn JP2007042773A (en) 2005-08-02 2005-08-02 Photosensor and manufacturing method therefor

Country Status (1)

Country Link
JP (1) JP2007042773A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011143638A2 (en) * 2010-05-14 2011-11-17 The Regents Of The University Of California Vacuum photosensor device with electron lensing
CN105405777A (en) * 2015-12-24 2016-03-16 上海源模微电子有限公司 Large-area parallel stacking type packaging structure and packaging method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011143638A2 (en) * 2010-05-14 2011-11-17 The Regents Of The University Of California Vacuum photosensor device with electron lensing
WO2011143638A3 (en) * 2010-05-14 2012-03-01 The Regents Of The University Of California Vacuum photosensor device with electron lensing
US9064678B2 (en) 2010-05-14 2015-06-23 The Regents Of The University Of California Vacuum photosensor device with electron lensing
CN105405777A (en) * 2015-12-24 2016-03-16 上海源模微电子有限公司 Large-area parallel stacking type packaging structure and packaging method
CN105405777B (en) * 2015-12-24 2018-07-13 南京慧感电子科技有限公司 A kind of extensive parallel stack type encapsulation structure and packaging method

Similar Documents

Publication Publication Date Title
US20060006511A1 (en) Ultrathin module for semiconductor device and method of fabricating the same
US7589422B2 (en) Micro-element package having a dual-thickness substrate and manufacturing method thereof
JP2007142042A (en) Semiconductor package, manufacturing method thereof, semiconductor module, and electronic equipment
JP2004296453A (en) Solid-state imaging device, semiconductor wafer, optical device module, method of manufacturing the solid-state imaging device, and method of manufacturing the optical device module
JP2007012995A (en) Microminiature camera module and method of manufacturing same
JP2004200965A (en) Camera module and manufacturing method thereof
US20090096048A1 (en) Optical device and manufacturing method thereof and semiconductor device
JP2007288168A (en) Infrared sensor, and method of manufacturing same
JP2004229167A (en) Manufacturing method of camera module
JP2002329850A (en) Chip size package and its manufacturing method
JP4466552B2 (en) Method for manufacturing solid-state imaging device
JP2006344902A (en) Semiconductor module
US7615397B2 (en) Micro-element package and manufacturing method thereof
US20100013041A1 (en) Microelectronic imager packages with covers having non-planar surface features
JP2007189032A (en) Manufacturing method of semiconductor device with sealed space
JP2007042773A (en) Photosensor and manufacturing method therefor
JP2009044494A (en) Imaging device
KR100756245B1 (en) Camera module
JP2010273087A (en) Semiconductor device and method for manufacturing the same
KR20050120142A (en) Camera module and method of fabricating the same using epoxy
US20090315130A1 (en) Solid-state imaging apparatus and method for manufacturing the same
JP2007273696A (en) Image sensing module and method of manufacturing the same
JP6889452B1 (en) Image sensor module and manufacturing method of image sensor module
KR101666599B1 (en) The method for camera image sensor package
JPH11330442A (en) Optical device

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20081007