JP2007012947A - Semiconductor light-receiving device - Google Patents

Semiconductor light-receiving device Download PDF

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Publication number
JP2007012947A
JP2007012947A JP2005193218A JP2005193218A JP2007012947A JP 2007012947 A JP2007012947 A JP 2007012947A JP 2005193218 A JP2005193218 A JP 2005193218A JP 2005193218 A JP2005193218 A JP 2005193218A JP 2007012947 A JP2007012947 A JP 2007012947A
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semiconductor light
receiving device
infrared absorber
wiring pattern
resin
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JP2005193218A
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Japanese (ja)
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Yuichiro Tanda
祐一郎 反田
Kazuo Funakubo
一夫 舟久保
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Citizen Electronics Co Ltd
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Light Receiving Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving device which will not cause deterioration in absorption of infrared rays and is improved in heat/moisture resistance properties. <P>SOLUTION: A wiring pattern serving as a connecting electrode is formed on a tabulate double-sided wiring board (PCB) 11 formed of glass-reinforced epoxy resin or ceramic material, and the wiring pattern is connected to another wiring pattern, serving as a lower terminal electrode through the intermediary of a through-hole etc. An SMD semiconductor light-receiving device 10 is equipped with a substantially cubical phototransistor 12 as a semiconductor light-receiving element die-bonded on the wiring pattern on the PCB 11, and the electrode of the phototransistor 12 is wire-bonded to the wiring pattern with a wire 13. In a sealing resin 14 for protecting the phototransistor 12 and the wire 13, an inorganic infrared absorbing agent and an organic infrared absorbing agent are used concurrently as an infrared absorbing agent which is mixed into thermosetting resin, such as epoxy. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、カーナビ等の移動体ディスプレイの自動輝度調整用センサや照明機器の自動照度調整用センサなどに用いられる半導体受光装置に関する。   The present invention relates to a semiconductor light receiving device used for an automatic brightness adjustment sensor for a mobile display such as a car navigation system, an automatic illuminance adjustment sensor for a lighting device, and the like.

従来、自動輝度調整用センサや自動照度調整用センサなどに用いられる半導体受光装置が開発されている（例えば、特許文献１参照。）。一方、近赤外線を吸収するフィルムを窓と組み合わせることが熱線遮断の目的で室内、車内の温度制御等に有用であり、各種赤外線吸収剤が知られている（例えば特許文献２、特許文献３及び特許文献４参照。）   Conventionally, a semiconductor light receiving device used for an automatic brightness adjustment sensor, an automatic illuminance adjustment sensor, and the like has been developed (see, for example, Patent Document 1). On the other hand, combining a film that absorbs near-infrared rays with a window is useful for controlling the temperature of indoors and vehicles for the purpose of blocking heat rays, and various infrared absorbers are known (for example, Patent Document 2, Patent Document 3 and (See Patent Document 4)

このような従来の半導体受光装置の一例について、図面に基づいてその概要を説明する。図２は従来の半導体受光装置の縦断面図である。図２において、５０は表面実装型の半導体受光装置であり、１１はガラエポ樹脂又はセラミックス材料から成る平板状の両面配線基板（ＰＣＢ）であり、上面に一対の接続電極を有する配線パターン１１ａ及び１１ｂを、下面に上面の配線パターンとスルーホール等で接続されている一対の端子電極１１ｃ及び１１ｄを有する。１２はＰＣＢ１１上の配線パターン１１ａの接続電極に一方の電極をダイボンド接合された略立方体形状の半導体受光素子であるフォトトランジスタであり、１３はＡｕ線等より成り、フォトトランジスタ１２の他方の電極と配線パターン１１ｂの接続電極とを接続するワイヤである。   An outline of an example of such a conventional semiconductor light-receiving device will be described with reference to the drawings. FIG. 2 is a longitudinal sectional view of a conventional semiconductor light receiving device. In FIG. 2, 50 is a surface mount type semiconductor light receiving device, 11 is a flat double-sided wiring board (PCB) made of glass epoxy resin or ceramic material, and wiring patterns 11a and 11b having a pair of connection electrodes on the upper surface. And a pair of terminal electrodes 11c and 11d connected to the upper wiring pattern by through holes or the like on the lower surface. Reference numeral 12 denotes a phototransistor which is a substantially cubic semiconductor light-receiving element in which one electrode is die-bonded to the connection electrode of the wiring pattern 11a on the PCB 11, and 13 is made of Au wire or the like. It is a wire that connects the connection electrode of the wiring pattern 11b.

５４はフォトトランジスタ１２及びワイヤ１３等を保護するための透光性の封止樹脂であり、この封止樹脂５４はエポキシ樹脂などの熱硬化性樹脂と、可視光線を透過し、近赤外線を吸収する赤外吸収剤（顔料・染料などの無機系化合物。例えば、大日本塗料の近赤外線カットフィルタコーティング材のＮＩＲＰシリーズ）とを混合したものである。これにより、半導体受光装置５０の比視感度特性を向上させようとしたものである。
特開平０８−２０４６５３号公報（第３頁、図１） 特開平０６−２７９５９７号公報（第２−４頁） 特開平０６−２１４１１３号公報（第３−６頁） 特開平０７−１００９９６号公報（第３−４頁、図１） Reference numeral 54 denotes a translucent sealing resin for protecting the phototransistor 12, the wire 13, and the like. The sealing resin 54 transmits a visible ray and absorbs a near infrared ray with a thermosetting resin such as an epoxy resin. Infrared absorbers (inorganic compounds such as pigments and dyes. For example, NIRP series of near-infrared cut filter coating materials of Dainippon Paint). Thereby, it is intended to improve the relative visibility characteristic of the semiconductor light receiving device 50.
Japanese Patent Laid-Open No. 08-204653 (page 3, FIG. 1) Japanese Patent Application Laid-Open No. 06-279597 (page 2-4) JP 06-214113 A (page 3-6) JP 07-100996 (page 3-4, FIG. 1)

しかしながら、従来の半導体受光装置５０においては、赤外線吸収剤を溶かした溶媒（例：ケトン）を封止樹脂に混ぜたり、樹脂表面にコーティングしていた。この際、溶媒ごと樹脂に混ぜるので、未硬化の樹脂成分が溶媒と反応するなどの硬化阻害が起きたり、信頼性が低下するなどの悪影響が発生することがあった。また、逆に樹脂の硬化反応が、赤外吸収剤に影響して、赤外吸収特性が悪くなることもあった（特に有機系）。   However, in the conventional semiconductor light receiving device 50, a solvent (eg, ketone) in which an infrared absorbing agent is dissolved is mixed in the sealing resin or coated on the resin surface. At this time, since the solvent and the resin are mixed with the resin, there are cases where an unfavorable effect such as an inhibition of curing such as an uncured resin component reacting with the solvent or a decrease in reliability may occur. Conversely, the curing reaction of the resin has an influence on the infrared absorbent, and the infrared absorption characteristics may be deteriorated (particularly organic).

上記発明は、このような従来の問題を解決するためになされたものであり、その目的は、赤外吸光劣化を起こさない耐熱耐湿性が向上した半導体受光装置を提供することである。   The present invention has been made to solve such a conventional problem, and an object thereof is to provide a semiconductor light-receiving device having improved heat and humidity resistance that does not cause infrared light absorption deterioration.

前述した目的を達成するための本発明の手段は、一面に接続電極を形成し他の一面にこの接続電極と導通する端子電極を形成した配線基板に受光素子を搭載して、この受光素子を熱硬化性樹脂と赤外吸収剤とを混合した封止樹脂により封止して成る半導体受光装置において、前記封止樹脂には無機系赤外吸収剤と有機系赤外吸収剤とを併用したことを特徴とする。   The means of the present invention for achieving the above-described object is to mount a light receiving element on a wiring board in which a connection electrode is formed on one surface and a terminal electrode electrically connected to the connection electrode is formed on the other surface. In a semiconductor light receiving device formed by sealing with a sealing resin in which a thermosetting resin and an infrared absorber are mixed, the sealing resin uses an inorganic infrared absorber and an organic infrared absorber in combination. It is characterized by that.

また、前記封止樹脂にはガラスビーズなどのフィラーに赤外吸収剤をコーティングしたものを混合したことを特徴とする。   Further, the sealing resin is characterized in that a filler such as glass beads coated with an infrared absorber is mixed.

また、前記フィラーには有機系赤外吸収剤と無機系赤外吸収剤とを重ねてコーティングしたことを特徴とする。   Further, the filler is characterized in that an organic infrared absorber and an inorganic infrared absorber are overlaid and coated.

また、前記フィラーに有機系赤外吸収剤のみをコーティングしたものと無機系赤外吸収剤のみをコーティングしたものとを混合したことを特徴とする。   Further, the filler is coated with only an organic infrared absorber and is coated with only an inorganic infrared absorber.

本発明によれば、赤外吸収剤を封止樹脂に混ぜるときに溶媒を使用しないので、封止樹脂中に溶媒が混ざることがなく信頼性が安定し、無機系赤外吸収剤と有機系赤外吸収剤とを併用することで、吸収できる赤外領域の幅が広い半導体受光装置が得られた。   According to the present invention, since no solvent is used when the infrared absorber is mixed with the sealing resin, the solvent is not mixed in the sealing resin, the reliability is stable, and the inorganic infrared absorber and the organic system are mixed. A semiconductor light-receiving device having a wide width in the infrared region that can be absorbed was obtained by using an infrared absorber in combination.

以下、本発明の最良の実施形態を図面に基づいて詳細に説明する。図１は本発明の実施の形態であるＳＭＤ型半導体受光装置の縦断面図である。図１において、１０は外形が略直方体形状のＳＭＤ型半導体受光装置である。半導体受光装置１０の封止樹脂以外の構成は従来の半導体受光装置５０と同様であるから、同じ構成要素には同じ符号と名称とを付して詳細な説明を省略する。   Hereinafter, the best embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a longitudinal sectional view of an SMD type semiconductor light receiving device according to an embodiment of the present invention. In FIG. 1, reference numeral 10 denotes an SMD type semiconductor light-receiving device whose outer shape is a substantially rectangular parallelepiped shape. Since the configuration other than the sealing resin of the semiconductor light receiving device 10 is the same as that of the conventional semiconductor light receiving device 50, the same components are denoted by the same reference numerals and names, and detailed description thereof is omitted.

１４はフォトトランジスタ１２やワイヤ１３を保護する封止樹脂である。封止樹脂１４は、エポキシなどの熱硬化性樹脂に赤外吸収剤を混合したものである。赤外吸収剤としては、有機系と無機系との両方を併用する。有機系赤外線吸収剤としては、シアニン系化合物、フタロシアニン化合物、フェニレンジアミニウムの塩素気塩、などが挙げられる。そして、無機系近赤外線吸収剤としては、ＩＴＯ（スズドープ酸化インジウム）、ＡＴＯ（アンチモンドープ酸化スズ）のような透明導電性酸化物、酸化亜鉛、酸化インジウム、酸化スズ、などが挙げられる。   A sealing resin 14 protects the phototransistor 12 and the wire 13. The sealing resin 14 is a mixture of an infrared absorbent and a thermosetting resin such as epoxy. As the infrared absorber, both an organic type and an inorganic type are used in combination. Examples of the organic infrared absorber include a cyanine compound, a phthalocyanine compound, and a chlorine salt of phenylenediaminium. Examples of the inorganic near-infrared absorber include transparent conductive oxides such as ITO (tin-doped indium oxide) and ATO (antimony-doped tin oxide), zinc oxide, indium oxide, and tin oxide.

次に、本発明の実施形態の作用効果について説明する。赤外線吸収剤に有機系と無機系との両方を併用することで、カットできる赤外領域の幅が広がる。   Next, the function and effect of the embodiment of the present invention will be described. By using both organic and inorganic materials in the infrared absorber, the width of the infrared region that can be cut widens.

次に、本発明のその他の実施の形態である半導体受光装置の封止樹脂について説明する。この封止樹脂にはガラスビーズなどの透明なフィラーに赤外吸収剤をコーティングしたものを混ぜて使用する。その際に、ガラスビーズに有機系赤外吸収剤と無機系赤外吸収剤とを重ねてコーティングする。又は、ガラスビーズに有機系赤外吸収剤のみをコーティングしたものと、無機系赤外吸収剤のみをコーティングしたものを一緒に樹脂に混ぜて使用する。   Next, a sealing resin for a semiconductor light receiving device according to another embodiment of the present invention will be described. This sealing resin is used by mixing a transparent filler such as glass beads coated with an infrared absorber. At that time, an organic infrared absorber and an inorganic infrared absorber are overlaid on the glass beads. Alternatively, a glass bead coated only with an organic infrared absorbent and a glass bead coated only with an inorganic infrared absorbent are mixed and used together with a resin.

次に、本発明のその他の実施形態の作用効果について説明する。赤外吸収剤を溶媒に溶かした状態で未硬化の封止樹脂に混ぜなくてよいので、信頼性が向上する。また、フィラーに赤外吸収剤をコーティングするので、溶媒や硬化条件に対する制限がかなりなくなる。なお、ガラスビーズに有機系赤外吸収剤と無機系赤外吸収剤とを重ねてコーティングする方法では、フィラーが１種類なので樹脂への配合量がコントロールしやすい。ガラスビーズに有機系赤外吸収剤のみをコーティングしたものと、無機系赤外吸収剤のみをコーティングしたものを一緒に樹脂に混ぜて使用する方法では、コーティングが１層のため赤外吸収特性がよくなる。   Next, the effect of other embodiment of this invention is demonstrated. Since the infrared absorber does not have to be mixed with the uncured sealing resin in a state dissolved in a solvent, the reliability is improved. In addition, since the filler is coated with an infrared absorber, the restrictions on the solvent and curing conditions are considerably eliminated. In addition, in the method of coating glass beads with an organic infrared absorber and an inorganic infrared absorber, the amount of the resin is easily controlled because there is only one kind of filler. In the method of using glass beads coated only with organic infrared absorbers and those coated only with inorganic infrared absorbers in a resin and using them together, the infrared absorption characteristics are reduced because the coating is a single layer. Get better.

本発明の半導体受光装置は、照明機器の照度調整用センサや自動輝度調整用センサなど民生用、産業用の用途に広く応用される。   The semiconductor light-receiving device of the present invention is widely applied to consumer and industrial uses such as an illuminance adjustment sensor and an automatic brightness adjustment sensor for lighting equipment.

本発明の実施形態である半導体受光装置の縦断面図である。It is a longitudinal cross-sectional view of the semiconductor light-receiving device which is embodiment of this invention. 従来の半導体受光装置の縦断面図である。It is a longitudinal cross-sectional view of the conventional semiconductor light-receiving device.

符号の説明Explanation of symbols

１０ 半導体受光装置
１１ ＰＣＢ
１１ｃ、１１ｄ 端子電極
１２ フォトトランジスタ
１４ 封止樹脂
10 Semiconductor light receiving device 11 PCB
11c, 11d Terminal electrode 12 Phototransistor 14 Sealing resin

Claims (4)

一面に接続電極を形成し他の一面にこの接続電極と導通する端子電極を形成した配線基板に受光素子を搭載して、この受光素子を熱硬化性樹脂と赤外吸収剤とを混合した封止樹脂により封止して成る半導体受光装置において、前記封止樹脂には無機系赤外吸収剤と有機系赤外吸収剤とを併用したことを特徴とする半導体受光装置。   A light receiving element is mounted on a wiring board having a connection electrode formed on one surface and a terminal electrode electrically connected to the connection electrode on the other surface, and the light receiving element is sealed with a mixture of a thermosetting resin and an infrared absorber. A semiconductor light-receiving device formed by sealing with a sealing resin, wherein the sealing resin uses an inorganic infrared absorber and an organic infrared absorber in combination. 前記封止樹脂にはガラスビーズなどのフィラーに赤外吸収剤をコーティングしたものを混合したことを特徴とする請求項１記載の半導体受光装置。   2. The semiconductor light receiving device according to claim 1, wherein said sealing resin is a mixture of a filler such as glass beads coated with an infrared absorber. 前記フィラーには有機系赤外吸収剤と無機系赤外吸収剤とを重ねてコーティングしたことを特徴とする請求項２記載の半導体受光装置。   3. The semiconductor light receiving device according to claim 2, wherein the filler is coated with an organic infrared absorber and an inorganic infrared absorber. 前記フィラーに有機系赤外吸収剤のみをコーティングしたものと無機系赤外吸収剤のみをコーティングしたものとを混合したことを特徴とする請求項２記載の半導体受光装置。
3. The semiconductor light receiving device according to claim 2, wherein the filler is coated only with an organic infrared absorber and is coated with only an inorganic infrared absorber.
JP2005193218A 2005-06-30 2005-06-30 Semiconductor light-receiving device Pending JP2007012947A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220011486A1 (en) * 2019-03-05 2022-01-13 Quantum-Si Incorporated Optical absorption filter for an integrated device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220011486A1 (en) * 2019-03-05 2022-01-13 Quantum-Si Incorporated Optical absorption filter for an integrated device

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