JP2007005577A

JP2007005577A - Pressing apparatus and method

Info

Publication number: JP2007005577A
Application number: JP2005184298A
Authority: JP
Inventors: Yukihiro Maekawa; 幸弘前川; Kazuji Azuma; 和司東; Shinji Ishitani; 伸治石谷
Original assignee: Matsushita Electric Industrial Co Ltd
Current assignee: Panasonic Holdings Corp
Priority date: 2005-06-24
Filing date: 2005-06-24
Publication date: 2007-01-11
Anticipated expiration: 2025-06-24
Also published as: JP4670503B2

Abstract

<P>PROBLEM TO BE SOLVED: To simplify the structure of a parallelism adjustment portion and to evenly press a first object against a second object under a state that the parallelism between a first abutting region of the first object and a second abutting region of the second object is precisely adjusted. <P>SOLUTION: In the pressing apparatus, the parallelism adjustment portion 32 of a substrate joining device 1 comprises a central portion 321 connected to a first holding portion 31 for holding a first substrate 91, a peripheral portion 322 connected to an installation portion 33, and flexible connecting portions 323 for connecting the central portion 321 and the peripheral portion 322. In the substrate joining device 1, the connecting portions 323 bend when the first substrate 91 is pressed against a second substrate 92, so the bottom face 911 of the first substrate 91 follows the top face 921 of the second substrate 92. Therefore, the structure of the parallelism adjustment portion 32 can be simplified, and the first substrate 91 can be evenly pressed against the second substrate 92, with the parallelism between the bottom face 911 of the first substrate 91 and the top face 921 of the second substrate 92 being precisely adjusted. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、一の対象物を他の対象物に向けて押圧する技術に関する。 The present invention relates to a technique for pressing one object toward another object.

従来より、多層デバイス等の製造において、半導体基板等の２枚の基板の主面を接合する技術が知られている。基板の接合を行う装置では通常、両基板の主面を当接させた状態で、一方の基板を他方に向けて押圧することにより２枚の基板が接合される。このような２つの対象物を押圧する装置では、対象物を均等に押圧するために、一方の対象物を支持する支持部と他方の対象物に力を加えて支持部に向けて押圧するツールとの平行度を調整するための様々な技術が提案されている。 2. Description of the Related Art Conventionally, a technique for joining main surfaces of two substrates such as a semiconductor substrate in manufacturing a multilayer device or the like is known. In an apparatus for joining substrates, usually, two substrates are joined by pressing one substrate toward the other while the main surfaces of both substrates are in contact with each other. In such an apparatus for pressing two objects, in order to press the object evenly, a tool that applies a force to the support part that supports one object and the other object and presses it toward the support part. Various techniques have been proposed for adjusting the parallelism.

例えば、特許文献１の加圧装置では、下プレート上に載置された対象物に向けて押圧されるツールが球面軸受に取り付けられており、対象物が載置されていない状態の下プレートに対してツールを押圧してツールを下プレートに倣わせた後、球面軸受が摺動しないように固定することにより、ツールの下プレートに対する平行度を調整する技術が開示されている。 For example, in the pressure device of Patent Document 1, a tool that is pressed toward an object placed on a lower plate is attached to a spherical bearing, and the lower plate is in a state where the object is not placed. A technique for adjusting the parallelism of the tool to the lower plate by pressing the tool against the lower plate and fixing the spherical bearing so as not to slide is disclosed.

また、特許文献２のボンディング装置では、ベアチップを先端に吸着するボンディングツールが、その他端側において球面軸受を介してロッドに取り付けられており、作業者がマイクロメータによりロッドの傾きを調整することにより、ボンディングツールのプリント基板に対する平行度を調整する技術が開示されている。 Moreover, in the bonding apparatus of patent document 2, the bonding tool which adsorb | sucks a bare chip to the front-end | tip is attached to the rod via the spherical bearing in the other end side, and an operator adjusts the inclination of a rod with a micrometer. A technique for adjusting the parallelism of a bonding tool to a printed circuit board is disclosed.

特許文献３の陽極化成装置では、ゴム等のような柔軟性を有する接触保証機構を介してプラス電極を基板に向けて押圧することにより、プラス電極の表面を基板の裏面に倣わせる技術が開示されている。
特開２００１−２２３２４４号公報特開２０００−４９１９９号公報特開２００４−１０３８００号公報 In the anodizing apparatus of Patent Document 3, there is a technique for imitating the surface of the positive electrode to the back surface of the substrate by pressing the positive electrode toward the substrate through a flexible contact guarantee mechanism such as rubber. It is disclosed.
JP 2001-223244 A JP 2000-49199 A JP 2004-103800 A

ところで、特許文献１および特許文献２では、ツールの傾きを調整するために球面軸受が利用されているため、押圧機構の構造が複雑になってしまう。また、実際に対象物を押圧する工程の前にツールの平行度を厳密に調整する工程が必要となるため、作業効率の向上に限界がある。さらには、特許文献２のボンディング装置における平行度調整では、圧力を色に変換して表示する特殊な紙をボンディングツールとプリント基板との間に配置し、作業者がボンディングツールの押圧による紙の色の変化を目視してボンディングツールの傾きを調整するため、作業者の熟練度等により調整結果が異なってしまう。 By the way, in patent document 1 and patent document 2, since the spherical bearing is utilized in order to adjust the inclination of a tool, the structure of a press mechanism will be complicated. Moreover, since the process of adjusting the parallelism of a tool exactly before the process of actually pressing a target object is required, there exists a limit in improvement of work efficiency. Furthermore, in the parallelism adjustment in the bonding apparatus of Patent Document 2, a special paper that converts pressure into a color and displays it is disposed between the bonding tool and the printed circuit board, and the operator presses the bonding tool to press the paper. Since the inclination of the bonding tool is adjusted by visually observing the color change, the adjustment result varies depending on the skill level of the operator.

また、特許文献３では、接触保証機構により上記のような問題は解決されるものと考えられるが、接触保証機構についてゴムやバネのような部材であることが開示されているのみであり、接触保証機構の具体的な形状や接触保証機構が取り付けられる下部電極との具体的な接続態様については何ら開示されていない。 Further, in Patent Document 3, it is considered that the above-described problem is solved by the contact assurance mechanism, but it is only disclosed that the contact assurance mechanism is a member such as a rubber or a spring. There is no disclosure of a specific shape of the guarantee mechanism or a specific connection mode with the lower electrode to which the contact guarantee mechanism is attached.

本発明は、上記課題に鑑みなされたものであり、平行度調整部の構造を簡素化するとともに第１対象物の第１当接領域と第２対象物の第２当接領域との平行度を精度良く調整しつつ第１対象物を第２対象物に対して均等に押圧することを目的としている。 This invention is made | formed in view of the said subject, and while the structure of a parallelism adjustment part is simplified, the parallelism of the 1st contact area of a 1st target object and the 2nd contact area of a 2nd target object It aims at pressing a 1st target object equally with respect to a 2nd target object, adjusting with high precision.

請求項１に記載の発明は、第１対象物を第２対象物に向けて押圧する押圧装置であって、第１対象物を保持する第１保持部と、前記第１対象物の第１当接領域を第２対象物の第２当接領域に対向させつつ前記第２対象物を保持する第２保持部と、前記第１保持部を前記第２保持部に向けて相対的に移動することにより前記第１対象物を前記第２対象物に向けて押圧する押圧機構と、前記第１保持部の押圧方向に関して前記第１保持部と所定の取付部との間に配置されて前記第１保持部と前記取付部とを接続するとともに、前記第１対象物の前記第２対象物への押圧時に前記第１当接領域を前記第２当接領域に倣わせる板状の平行度調整部とを備え、前記平行度調整部が、前記第１保持部の前記押圧方向に関して前記第１対象物に重なるとともに前記第１保持部および前記取付部のいずれか一方に接続される中央部と、前記中央部の外側に位置し、前記第１保持部および前記取付部の他方に接続される外周部と、前記中央部と前記外周部とを連結するとともに可撓性を有する連結部とを備える。 The invention according to claim 1 is a pressing device that presses the first object toward the second object, the first holding unit holding the first object, and the first of the first object. A second holding part that holds the second object while the contact area is opposed to the second contact area of the second object, and the first holding part relatively moves toward the second holding part. And a pressing mechanism that presses the first object toward the second object, and the first holding part and a predetermined mounting part with respect to the pressing direction of the first holding part. A plate-like parallel that connects the first holding portion and the mounting portion and that causes the first contact area to follow the second contact area when the first object is pressed against the second object. A degree adjusting unit, and the parallel degree adjusting unit overlaps the first object with respect to the pressing direction of the first holding unit. A central part connected to one of the first holding part and the attaching part; an outer peripheral part located outside the central part and connected to the other of the first holding part and the attaching part; The center part and the said outer peripheral part are connected, and the connection part which has flexibility is provided.

請求項２に記載の発明は、請求項１に記載の押圧装置であって、前記平行度調整部の前記連結部が、前記第１対象物の前記中心を通り前記押圧方向に平行な所定の中心軸を中心とする周方向において前記中央部と前記外周部とを等間隔にて連結する。 Invention of Claim 2 is a press apparatus of Claim 1, Comprising: The said connection part of the said parallelism adjustment part passes along the said center of the said 1st target object, and is parallel to the said pressing direction. The central portion and the outer peripheral portion are connected at equal intervals in a circumferential direction centered on the central axis.

請求項３に記載の発明は、請求項２に記載の押圧装置であって、前記平行度調整部の前記中央部および前記外周部が、前記中心軸を中心として軸対称である。 The invention according to claim 3 is the pressing device according to claim 2, wherein the central portion and the outer peripheral portion of the parallelism adjusting portion are axisymmetric about the central axis.

請求項４に記載の発明は、請求項１ないし３のいずれかに記載の押圧装置であって、前記中央部、前記連結部および前記外周部の厚さが同じである。 A fourth aspect of the present invention is the pressing device according to any one of the first to third aspects, wherein the central portion, the connecting portion, and the outer peripheral portion have the same thickness.

請求項５に記載の発明は、請求項１ないし４のいずれかに記載の押圧装置であって、前記押圧機構による押圧により前記第１当接領域と前記第２当接領域とが接合される。 The invention according to claim 5 is the pressing device according to any one of claims 1 to 4, wherein the first contact region and the second contact region are joined by pressing by the pressing mechanism. .

請求項６に記載の発明は、請求項５に記載の押圧装置であって、前記第１保持部に保持された前記第１対象物および前記第２保持部に保持された前記第２対象物を外気から隔離するチャンバをさらに備え、前記第１対象物の前記第２対象物に対する押圧が、減圧または不活性ガス環境とされた前記チャンバ内において行われる。 The invention according to claim 6 is the pressing device according to claim 5, wherein the first object held by the first holding part and the second object held by the second holding part. A chamber that isolates the first object from the outside air, and the pressing of the first object against the second object is performed in the chamber in a reduced pressure or inert gas environment.

請求項７に記載の発明は、請求項５または６に記載の押圧装置であって、前記第１対象物および前記第２対象物の少なくとも一方が半導体基板である。 The invention according to claim 7 is the pressing device according to claim 5 or 6, wherein at least one of the first object and the second object is a semiconductor substrate.

請求項８に記載の発明は、第１対象物を第２対象物に向けて押圧する押圧方法であって、ａ）所定の押圧方向に関して取付部との間に配置された板状の平行度調整部を介して前記取付部に接続される保持部により第１対象物を保持する工程と、ｂ）前記第１対象物の第１当接領域を第２対象物の第２当接領域に対向させつつ前記第２対象物を保持する工程と、ｃ）前記保持部を前記第２対象物に向けて相対的に移動することにより、前記第１当接領域を前記第２当接領域に倣わせつつ前記第１対象物を前記第２対象物に向けて押圧する工程とを備え、前記平行度調整部が、前記保持部の前記押圧方向に関して前記第１対象物に重なるとともに前記保持部よび前記取付部のいずれか一方に接続される中央部と、前記中央部の外側に位置し、前記保持部および前記取付部の他方に接続される外周部と、前記中央部と前記外周部とを接続するとともに可撓性を有する連結部とを備える。 Invention of Claim 8 is a pressing method which presses a 1st target toward a 2nd target, Comprising: a) Plate-shaped parallelism arrange | positioned between attachment parts regarding a predetermined pressing direction A step of holding the first object by a holding part connected to the attachment part via the adjustment part; b) the first contact area of the first object is set as the second contact area of the second object Holding the second object while facing each other, and c) moving the holding part relative to the second object, thereby changing the first contact area to the second contact area. A step of pressing the first object toward the second object while following the object, and the parallelism adjustment unit overlaps the first object in the pressing direction of the holding unit and the holding unit And a central part connected to one of the attachment parts, and located outside the central part, It includes an outer peripheral portion which is connected to the other sandwiching member and the mounting portion, and a connecting portion having flexibility as well as connecting the said central portion outer peripheral portion.

本発明では、平行度調整部の構造を簡素化するとともに第１対象物の第１当接領域と第２対象物の第２当接領域との平行度を精度良く調整しつつ第１対象物を第２対象物に対して均等に押圧することができる。請求項６の発明では、チャンバ内の構造を簡素化することができる。 In the present invention, the structure of the parallelism adjusting unit is simplified, and the first object is accurately adjusted while adjusting the parallelism between the first contact area of the first object and the second contact area of the second object. Can be pressed evenly against the second object. In the invention of claim 6, the structure in the chamber can be simplified.

図１は、本発明の一の実施の形態に係る押圧装置である基板接合装置１の構成を示す正面図である。基板接合装置１は、第１対象物である略円板状の半導体基板（以下、「第１基板」という。）９１を第２対象物である略円板状の半導体基板（以下、「第２基板」という。）９２に向けて押圧することにより、両基板の当接領域である主面を接合する装置であり、ＭＥＭＳ（Micro Electro Mechanical Systems）デバイス等の製造に利用される。図１中では、図示の都合上、基板接合装置１の構成の一部を断面にて描いている（図４においても同様）。 FIG. 1 is a front view showing a configuration of a substrate bonding apparatus 1 which is a pressing apparatus according to an embodiment of the present invention. The substrate bonding apparatus 1 uses a substantially disc-shaped semiconductor substrate (hereinafter referred to as “first substrate”) 91 as a first object to a substantially disc-shaped semiconductor substrate (hereinafter referred to as “first object”) as a second object. It is an apparatus that joins the main surfaces, which are the contact areas of both substrates, by pressing toward the substrate 92, and is used to manufacture MEMS (Micro Electro Mechanical Systems) devices and the like. In FIG. 1, for convenience of illustration, a part of the configuration of the substrate bonding apparatus 1 is drawn in cross section (the same applies to FIG. 4).

図１に示すように、基板接合装置１は、第１基板９１および第２基板９２を内部に収容して外気から隔離するチャンバ２、チャンバ２内において第１基板９１を保持するとともに第１基板９１を第２基板９２に向けて押圧する押圧ヘッド３、チャンバ２内において第２基板９２を静電気力により吸着して保持する第２保持部４１、チャンバ２内を減圧環境または不活性ガス環境とする環境調整機構２１、並びに、押圧ヘッド３および第２保持部４１に保持された第１基板９１および第２基板９２を撮像する撮像部５を備える。 As shown in FIG. 1, the substrate bonding apparatus 1 holds the first substrate 91 in the chamber 2 and the chamber 2 in which the first substrate 91 and the second substrate 92 are housed and isolated from the outside air, and the first substrate 91 The pressure head 3 that presses 91 toward the second substrate 92, the second holding portion 41 that holds the second substrate 92 by electrostatic force in the chamber 2, and the chamber 2 has a reduced pressure environment or an inert gas environment And an imaging unit 5 that images the first substrate 91 and the second substrate 92 held by the pressing head 3 and the second holding unit 41.

押圧ヘッド３は、第１基板９１を静電気力により吸着して保持する第１保持部３１を備え、第１保持部３１に保持された第１基板９１の（−Ｚ）側の主面（以下、「下面」という。）９１１は、第２保持部４１に保持された第２基板９２の（＋Ｚ）側の主面（以下、「上面」という。）９２１に対向する。本実施の形態では、第１基板９１の下面９１１のほぼ全体が第２基板９２に当接する予定の領域（以下、「当接領域」という。）であり、また、第２基板９２の上面９２１のほぼ全体が第１基板９１に当接する当接領域であるため、第１基板９１の上面９２１および第２基板９２の下面９１１を両基板の当接領域と呼ぶ場合がある。 The pressing head 3 includes a first holding unit 31 that holds the first substrate 91 by electrostatic force and holds the first substrate 91 on the (−Z) side main surface (hereinafter referred to as “-Z” side). 911 is opposed to a main surface (hereinafter referred to as “upper surface”) 921 on the (+ Z) side of the second substrate 92 held by the second holding portion 41. In the present embodiment, almost the entire lower surface 911 of the first substrate 91 is a region that will contact the second substrate 92 (hereinafter referred to as “contact region”), and the upper surface 921 of the second substrate 92. Since the entire contact area is in contact with the first substrate 91, the upper surface 921 of the first substrate 91 and the lower surface 911 of the second substrate 92 may be referred to as contact regions of both substrates.

押圧ヘッド３は、第１保持部３１の（＋Ｚ）側にて円板状の部材３１１を介して第１保持部３１に接続されるとともに第１基板９１の第２基板９２への押圧時に第１基板９１の下面９１１を第２基板９２の上面９２１に倣わせる板状の（いわゆる、メンブレン構造である）平行度調整部３２、平行度調整部３２の（＋Ｚ）側に接続される円環状の取付部３３、並びに、円板状の部材３３１および略円柱状のシャフト３３２を介して取付部３３に接続されるとともに第１保持部３１を第２保持部４１に対して相対的に離れる方向および近づく方向に移動する（すなわち、図１中のＺ方向に昇降する）保持部昇降機構３４を備える。部材３１１には、部材３３１に固定された複数のピン状の固定部材３１２が遊嵌され、各固定部材３１２の下端の幅は抜け防止のために広くなっている。また、シャフト３３２は、チャンバ２の（＋Ｚ）側の面に設けられた開口に挿入されており、当該開口はベローズ３３３によりシールされている。 The pressing head 3 is connected to the first holding unit 31 via the disk-shaped member 311 on the (+ Z) side of the first holding unit 31 and is pressed when the first substrate 91 is pressed against the second substrate 92. A plate-like (so-called membrane structure) parallelism adjusting unit 32 that follows the lower surface 911 of one substrate 91 to the upper surface 921 of the second substrate 92, and a circle connected to the (+ Z) side of the parallelism adjusting unit 32 It is connected to the mounting portion 33 via the annular mounting portion 33, the disk-shaped member 331 and the substantially cylindrical shaft 332, and the first holding portion 31 is relatively separated from the second holding portion 41. The holding part raising / lowering mechanism 34 which moves to a direction and the direction which approaches (that is, raise / lower to the Z direction in FIG. 1) is provided. A plurality of pin-shaped fixing members 312 fixed to the member 331 are loosely fitted to the member 311, and the width of the lower end of each fixing member 312 is widened to prevent it from coming off. The shaft 332 is inserted into an opening provided on the (+ Z) side surface of the chamber 2, and the opening is sealed by a bellows 333.

押圧ヘッド３では、Ｚ方向（すなわち、押圧方向）に関して第１保持部３１と取付部３３との間に配置される平行度調整部３２により第１保持部３１と取付部３３とが接続される。また、保持部昇降機構３４により第１保持部３１が平行度調整部３２および取付部３３と共に第２保持部４１に向けて相対的に移動することにより、第１保持部３１に保持された第１基板９１が第２基板９２に向けて押圧される。換言すれば、保持部昇降機構３４は、第１基板９１を第２基板９２に向けて押圧する押圧機構となっている。押圧ヘッド３は、部材３３１の（−Ｚ）側に、平行度調整部３２と離間して設けられるとともに第１基板９１の押圧時に平行度調整部３２の略中央に当接する中央部当接部材３１３をさらに備え、中央部当接部材３１３の（−Ｚ）側の面は略球面状（の一部）とされる。なお、図１では、中央部当接部材３１３と平行度調整部３２との間の距離を実際よりも大きく描いている。 In the pressing head 3, the first holding part 31 and the attaching part 33 are connected by a parallelism adjusting part 32 arranged between the first holding part 31 and the attaching part 33 in the Z direction (that is, the pressing direction). . Further, the first holding portion 31 is moved relative to the second holding portion 41 together with the parallelism adjusting portion 32 and the attachment portion 33 by the holding portion raising / lowering mechanism 34, whereby the first holding portion 31 held by the first holding portion 31. The first substrate 91 is pressed toward the second substrate 92. In other words, the holding unit lifting mechanism 34 is a pressing mechanism that presses the first substrate 91 toward the second substrate 92. The pressing head 3 is provided on the (−Z) side of the member 331 so as to be separated from the parallelism adjusting unit 32 and is in contact with the approximate center of the parallelism adjusting unit 32 when the first substrate 91 is pressed. 313 is further provided, and the surface on the (−Z) side of the central contact member 313 is substantially spherical (part). In addition, in FIG. 1, the distance between the center part contact member 313 and the parallelism adjustment part 32 is drawn larger than actual.

図２は、平行度調整部３２を拡大して示す平面図である。図２に示すように、平行度調整部３２は、所定の中心軸３２０を中心とする円形の（すなわち、中心軸３２０を中心として軸対称である）中央部３２１、中央部３２１の外側に位置するとともに中心軸３２０を中心とする円環状の（すなわち、中心軸３２０を中心として軸対称である）外周部３２２、および、中心軸３２０を中心として放射状に広がって中央部３２１と外周部３２２とを接続するとともに可撓性を有する複数の連結部３２３を備える。中央部３２１、外周部３２２および連結部３２３は、厚さが同じであり、連結部３２３により、中心軸３２０を中心とする周方向において中央部３２１と外周部３２２とが等間隔にて連結される。本実施の形態では、中心軸３２０を中心とする周方向において４５°毎に配置される連結部３２３により、中央部３２１と外周部３２２とが連結される。このような平行度調整部３２は、一定の厚さの金属板を加工することにより製作される。 FIG. 2 is an enlarged plan view showing the parallelism adjusting unit 32. As shown in FIG. 2, the parallelism adjusting unit 32 has a circular central portion 321 centered on a predetermined central axis 320 (that is, axially symmetric about the central axis 320), and is positioned outside the central portion 321. And an annular outer peripheral part 322 centered on the central axis 320 (that is, axially symmetric about the central axis 320), and a central part 321 and an outer peripheral part 322 extending radially about the central axis 320. And a plurality of connecting portions 323 having flexibility. The central portion 321, the outer peripheral portion 322, and the connecting portion 323 have the same thickness, and the central portion 321 and the outer peripheral portion 322 are connected at equal intervals in the circumferential direction around the central axis 320 by the connecting portion 323. The In the present embodiment, the central portion 321 and the outer peripheral portion 322 are connected by connecting portions 323 that are arranged every 45 ° in the circumferential direction around the central axis 320. Such a parallelism adjusting unit 32 is manufactured by processing a metal plate having a certain thickness.

なお、平行度調整部３２はいわゆる薄板には限定されず、ある程度厚さを有する板状であってもよい。また、厚板の場合は連結部３２３の弾性は極僅かとなるが、本実施の形態のように半導体基板同士を接合する場合は、極めて精度の高い僅かな平行度の調整のみが必要となるため、連結部３２３の弾性は小さくてよい。 The parallelism adjusting unit 32 is not limited to a so-called thin plate, and may be a plate having a certain thickness. Further, in the case of a thick plate, the elasticity of the connecting portion 323 is negligible, but when semiconductor substrates are joined as in the present embodiment, only a very high degree of parallelism adjustment is required. Therefore, the elasticity of the connecting portion 323 may be small.

図１および図２に示すように、押圧ヘッド３では、中央部３２１が部材３１１を介して第１保持部３１に接続され、外周部３２２が取付部３３に接続されることにより、第１保持部３１と取付部３３とが平行度調整部３２により接続される。平行度調整部３２では、中央部３２１が第１保持部３１の押圧方向（すなわち、Ｚ方向）に関して第１基板９１の中心に重なっており、中心軸３２０は第１基板９１の中心を通り第１保持部３１の押圧方向に平行となっている。 As shown in FIGS. 1 and 2, in the pressing head 3, the central portion 321 is connected to the first holding portion 31 via the member 311, and the outer peripheral portion 322 is connected to the mounting portion 33, thereby holding the first holding portion. The part 31 and the attaching part 33 are connected by the parallelism adjusting part 32. In the parallelism adjusting unit 32, the central portion 321 overlaps the center of the first substrate 91 with respect to the pressing direction of the first holding portion 31 (that is, the Z direction), and the central axis 320 passes through the center of the first substrate 91. 1 is parallel to the pressing direction of the holding portion 31.

図１に示すように、撮像部５は、（＋Ｚ）側および（−Ｚ）側を撮像するための２つの撮像窓５１を備え、２つの撮像窓５１はチャンバ２内においてＸ方向に一体的に進退可能とされる。また、撮像部５は、チャンバ２の（＋Ｘ）側の面に設けられた開口に挿入されており、当該開口はベローズによりシールされている。 As shown in FIG. 1, the imaging unit 5 includes two imaging windows 51 for imaging the (+ Z) side and the (−Z) side, and the two imaging windows 51 are integrated in the X direction in the chamber 2. It is possible to advance and retreat. The imaging unit 5 is inserted into an opening provided on the (+ X) side surface of the chamber 2, and the opening is sealed with a bellows.

基板接合装置１は、第２保持部４１の（−Ｚ）側に配置されて第２保持部４１をＸ方向およびＹ方向に移動する保持部移動機構４２、並びに、第２保持部４１の中心を通ってＺ方向に伸びる回転軸を中心に第２保持部４１を回動する保持部回動機構４３をさらに備え、撮像部５により撮像された第１基板９１および第２基板９２の画像に基づいて第２基板９２の位置および向きがチャンバ２内において調整されることにより、第１基板９１および第２基板９２の位置合わせが行われる。 The substrate bonding apparatus 1 is arranged on the (−Z) side of the second holding unit 41 and moves the second holding unit 41 in the X direction and the Y direction, and the center of the second holding unit 41. A holding unit rotating mechanism 43 that rotates the second holding unit 41 about a rotation axis that extends in the Z direction through the image, and displays images of the first substrate 91 and the second substrate 92 captured by the imaging unit 5. Based on this, the position and orientation of the second substrate 92 are adjusted in the chamber 2, so that the first substrate 91 and the second substrate 92 are aligned.

基板接合装置１は、第１保持部３１内に設けられた電極に接続される高周波電源２２をさらに備え、第２保持部４１内に設けられた電極は接地されている。基板接合装置１では、第１基板９１および第２基板９２の接合の過程において、所定の減圧環境または不活性ガス環境とされたチャンバ２内において、第１保持部３１および第２保持部４１により第１基板９１および第２基板９２が離間した状態で保持され、この状態で高周波電源２２から第１保持部３１に高周波の電圧が付与されることにより、第１保持部３１と第２保持部４１との間に高周波電圧が印加されてプラズマが発生する。これにより、第１基板９１の下面９１１および第２基板９２の上面９２１（すなわち、両基板の当接領域）にプラズマが照射され、両基板の当接領域上に付着している水や有機物等の不要物質が除去されるとともに当接領域の表面改質が行われる。 The substrate bonding apparatus 1 further includes a high-frequency power source 22 connected to an electrode provided in the first holding unit 31, and the electrode provided in the second holding unit 41 is grounded. In the substrate bonding apparatus 1, in the process of bonding the first substrate 91 and the second substrate 92, the first holding unit 31 and the second holding unit 41 use the first holding unit 31 and the second holding unit 41 in the chamber 2 in a predetermined reduced pressure environment or inert gas environment. The first substrate 91 and the second substrate 92 are held in a separated state, and a high frequency voltage is applied from the high frequency power supply 22 to the first holding unit 31 in this state, whereby the first holding unit 31 and the second holding unit. A high frequency voltage is applied between the two and 41 to generate plasma. As a result, the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 (that is, the contact area between the two substrates) are irradiated with plasma, and water, organic matter, etc. adhering to the contact area between the two substrates Unnecessary substances are removed and surface modification of the contact area is performed.

換言すれば、基板接合装置１では、高周波電源２２、第１保持部３１内の電極および第２保持部４１内の電極が、第１基板９１および第２基板９２の当接領域にエネルギー波であるプラズマを照射するエネルギー波照射機構となり、エネルギー波照射機構が能動化されることにより、両基板の当接領域にいわゆるプラズマ洗浄処理が行われる。なお、第１保持部３１が金属等の導電体により形成されている場合には、第１保持部３１内に電極が設けられる必要はなく、第１保持部３１全体が、第１基板９１および第２基板９２を挟んで配置される１対の電極の一方となる（第２保持部４１についても同様）。 In other words, in the substrate bonding apparatus 1, the high-frequency power source 22, the electrode in the first holding unit 31, and the electrode in the second holding unit 41 are energized in the contact area between the first substrate 91 and the second substrate 92. An energy wave irradiation mechanism for irradiating a certain plasma is formed, and when the energy wave irradiation mechanism is activated, a so-called plasma cleaning process is performed on the contact region of both substrates. In the case where the first holding unit 31 is formed of a conductor such as a metal, it is not necessary to provide an electrode in the first holding unit 31, and the entire first holding unit 31 is formed of the first substrate 91 and the first holding unit 31. One of the pair of electrodes arranged with the second substrate 92 interposed therebetween (the same applies to the second holding portion 41).

次に、基板接合装置１による第１基板９１と第２基板９２との接合の流れについて説明する。図３は、基板接合装置１による接合動作の流れを示す図である。基板接合装置１により基板の接合が行われる際には、まず、チャンバ２のゲートが開放され、第１基板９１が当該ゲートからチャンバ２内に搬入され、図１に示すように、チャンバ２内において第１保持部３１により保持される（ステップＳ１１）。続いて、第１基板９１と同様にチャンバ２内に搬入された第２基板９２が第２保持部４１により保持され、第１基板９１と第２基板９２とが離間した状態で、第１基板９１の下面９１１と第２基板９２の上面９２１とがＺ方向において対向する（すなわち、両基板の当接領域が対向する。）（ステップＳ１２）。なお、第１保持部３１および第２保持部４１による第１基板９１および第２基板９２の保持は並行して行われてもよく、第２基板９２の保持が第１基板９１の保持よりも先に行われてもよい。 Next, the flow of bonding between the first substrate 91 and the second substrate 92 by the substrate bonding apparatus 1 will be described. FIG. 3 is a diagram illustrating a flow of a bonding operation by the substrate bonding apparatus 1. When the substrates are bonded by the substrate bonding apparatus 1, first, the gate of the chamber 2 is opened, and the first substrate 91 is carried into the chamber 2 from the gate, and as shown in FIG. In the first holding unit 31 (step S11). Subsequently, in the same manner as the first substrate 91, the second substrate 92 carried into the chamber 2 is held by the second holding unit 41, and the first substrate 91 and the second substrate 92 are separated from each other. The lower surface 911 of 91 and the upper surface 921 of the second substrate 92 face each other in the Z direction (that is, the contact areas of both substrates face each other) (step S12). The holding of the first substrate 91 and the second substrate 92 by the first holding unit 31 and the second holding unit 41 may be performed in parallel, and the holding of the second substrate 92 is more than holding of the first substrate 91. It may be done first.

第１保持部３１および第２保持部４１により第１基板９１および第２基板９２がチャンバ２内にて保持されると、チャンバ２のゲートが閉じられて第１基板９１および第２基板９２が外気から隔離される。そして、環境調整機構２１（例えば、真空ポンプおよびガス供給機構）により、チャンバ２内のエアが排気され、アルゴン（Ａｒ）ガス等の処理ガスが供給されてチャンバ２内が所定の減圧環境（または、不活性ガス環境）とされる（ステップＳ１３）。 When the first substrate 91 and the second substrate 92 are held in the chamber 2 by the first holding unit 31 and the second holding unit 41, the gate of the chamber 2 is closed and the first substrate 91 and the second substrate 92 are moved. Isolated from outside air. Then, the air in the chamber 2 is exhausted by the environment adjusting mechanism 21 (for example, a vacuum pump and a gas supply mechanism), and a processing gas such as argon (Ar) gas is supplied to the chamber 2 so that the inside of the chamber 2 has a predetermined reduced pressure environment (or , Inert gas environment) (step S13).

チャンバ２内が減圧環境とされると、第１保持部３１および第２保持部４１の（＋Ｘ）側に位置する撮像部５が（−Ｘ）方向に移動し、図１中に二点鎖線にて示す位置に位置する。２つの撮像窓５１は、対向する第１基板９１と第２基板９２との間に位置し、（＋Ｚ）側の撮像窓５１を介して第１基板９１の下面９１１に設けられたパターン（例えば、配線パターンや位置合わせ用の印）が撮像され、これと同時に（−Ｚ）側の撮像窓５１を介して第２基板９２の上面９２１に設けられたパターンが撮像される（ステップＳ１４）。 When the inside of the chamber 2 is in a reduced pressure environment, the imaging unit 5 located on the (+ X) side of the first holding unit 31 and the second holding unit 41 moves in the (−X) direction, and a two-dot chain line in FIG. Located at the position indicated by. The two imaging windows 51 are located between the first substrate 91 and the second substrate 92 facing each other, and are provided on the lower surface 911 of the first substrate 91 via the (+ Z) imaging window 51 (for example, Then, a pattern provided on the upper surface 921 of the second substrate 92 is imaged through the imaging window 51 on the (−Z) side (step S14).

次に、撮像部５により取得された第１基板９１および第２基板９２の画像に基づいて第１基板９１の第２基板９２に対する相対位置のずれ量が求められる。そして、保持部移動機構４２および保持部回動機構４３により、第２保持部４１に保持された第２基板９２が移動および回動され、第１基板９１の第２基板９２に対する相対的な位置および向きが調整されて第１基板９１および第２基板９２の位置合わせ（いわゆる、アライメント）が行われる（ステップＳ１５）。 Next, a displacement amount of the relative position of the first substrate 91 with respect to the second substrate 92 is obtained based on the images of the first substrate 91 and the second substrate 92 acquired by the imaging unit 5. The second substrate 92 held by the second holding unit 41 is moved and rotated by the holding unit moving mechanism 42 and the holding unit rotating mechanism 43, and the relative position of the first substrate 91 with respect to the second substrate 92 is changed. Then, the orientation is adjusted and the first substrate 91 and the second substrate 92 are aligned (so-called alignment) (step S15).

押圧ヘッド３では、第１保持部３１に接続される部材３１１の下面が固定部材３１２の先端の幅が広い部位に軽く当接して部材３１１の位置が部材３３１に対して固定されており、これにより、平行度調整部３２が第１基板９１、第１保持部３１および部材３１１の重量により変形することが防止される。その結果、平行度調整部３２の変形による第１基板９１の位置の変化が防止され、第１基板９１および第２基板９２の位置合わせを高い精度にて行うことができる。 In the pressing head 3, the lower surface of the member 311 connected to the first holding portion 31 is slightly in contact with the wide end portion of the fixing member 312, and the position of the member 311 is fixed to the member 331. This prevents the parallelism adjusting unit 32 from being deformed by the weight of the first substrate 91, the first holding unit 31, and the member 311. As a result, a change in the position of the first substrate 91 due to the deformation of the parallelism adjusting unit 32 is prevented, and the first substrate 91 and the second substrate 92 can be aligned with high accuracy.

第１基板９１および第２基板９２の位置合わせが行われると、撮像部５の２つの撮像窓５１が一体的に（＋Ｘ）方向に移動し、第１基板９１および第２基板９２の間から退避する。そして、高周波電源２２が能動化され、減圧環境下において第１基板９１の下面９１１および第２基板９２の上面９２１にプラズマが照射されて第１基板９１および第２基板９２に対するプラズマ洗浄処理が行われる（ステップＳ１６）。 When the first substrate 91 and the second substrate 92 are aligned, the two imaging windows 51 of the imaging unit 5 are integrally moved in the (+ X) direction, and from between the first substrate 91 and the second substrate 92. evacuate. Then, the high-frequency power supply 22 is activated, and plasma is irradiated to the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 in a reduced pressure environment to perform a plasma cleaning process on the first substrate 91 and the second substrate 92. (Step S16).

図４は、第１基板９１および第２基板９２の接合途上の様子を示す基板接合装置１の正面図である。プラズマ洗浄処理が完了すると、保持部昇降機構３４により第１保持部３１が（−Ｚ）方向に移動して第１基板９１が第２基板９２に対して相対的に近づけられ、第１基板９１の下面９１１が第２基板９２の上面９２１に当接する（すなわち、両基板の当接領域が当接する。）（ステップＳ１７）。 FIG. 4 is a front view of the substrate bonding apparatus 1 showing how the first substrate 91 and the second substrate 92 are being bonded. When the plasma cleaning process is completed, the first holding unit 31 is moved in the (−Z) direction by the holding unit lifting mechanism 34 so that the first substrate 91 is relatively brought closer to the second substrate 92, and the first substrate 91 is moved. The lower surface 911 of the second substrate 92 contacts the upper surface 921 of the second substrate 92 (that is, the contact region of both substrates contacts) (step S17).

続いて、保持部昇降機構３４により平行度調整部３２を介して第１保持部３１に（−Ｚ）方向の力が加えられることにより、減圧環境（または、不活性ガス環境）とされたチャンバ２内において第１基板９１が第２基板９２に向けて押圧されて第１基板９１と第２基板９２とが接合される（ステップＳ１８）。 Subsequently, a chamber in a reduced pressure environment (or an inert gas environment) is obtained by applying a force in the (−Z) direction to the first holding unit 31 via the parallelism adjusting unit 32 by the holding unit lifting mechanism 34. 2, the first substrate 91 is pressed toward the second substrate 92 to bond the first substrate 91 and the second substrate 92 (step S18).

押圧ヘッド３では、保持部昇降機構３４により取付部３３を介して平行度調整部３２の外周部３２２（図２参照）に加えられた（−Ｚ）方向の力が、可撓性を有する連結部３２３を介して中央部３２１に伝達され、この力により第１基板９１が第１保持部３１と共に第２基板９２に向けて押圧される。したがって、押圧時には連結部３２３が撓んで部材３１１が固定部材３１２に対して僅かに上に移動し、固定部材３１２の先端部と部材３１１の下面との接触が解除されるとともに、平行度調整部３２の中央部３２１が中央部当接部材３１３に当接する。 In the pressing head 3, the force in the (−Z) direction applied to the outer peripheral portion 322 (see FIG. 2) of the parallelism adjusting portion 32 via the mounting portion 33 by the holding portion lifting mechanism 34 is flexible. The force is transmitted to the central portion 321 via the portion 323, and the first substrate 91 is pressed toward the second substrate 92 together with the first holding portion 31 by this force. Accordingly, when pressed, the connecting portion 323 bends and the member 311 moves slightly upward with respect to the fixed member 312, so that the contact between the distal end portion of the fixed member 312 and the lower surface of the member 311 is released, and the parallelism adjusting portion The central portion 321 of the 32 abuts against the central abutment member 313.

このように、第１基板９１の押圧時に連結部３２３が撓む（すなわち、弾性変形する）ことにより、基板接合装置１では、第１基板９１の下面９１１が第２基板９２の上面９２１に対して僅かに傾いている場合であっても、平行度調整部３２の中央部３２１が中央部当接部材３１３に当接して滑らかに傾き、第１基板９１の傾斜（例えば、６インチタイプのウエハにおいて、直径の両端における第２保持部４１との間の距離の差が１０μｍ程度となる傾斜）が補正されて第１基板９１の下面９１１が第２基板９２の上面９２１に倣う。なお、図４では、連結部３２３の撓み、第１基板９１および第２基板９２の傾き、並びに、部材３１１の下面と固定部材３１２との間の距離を実際よりも大きく描いている。 As described above, when the first substrate 91 is pressed, the connecting portion 323 bends (that is, elastically deforms), whereby in the substrate bonding apparatus 1, the lower surface 911 of the first substrate 91 is relative to the upper surface 921 of the second substrate 92. Even if it is slightly tilted, the central portion 321 of the parallelism adjusting section 32 is in contact with the central contact member 313 and smoothly tilts, and the first substrate 91 is tilted (for example, a 6-inch type wafer). The lower surface 911 of the first substrate 91 follows the upper surface 921 of the second substrate 92 by correcting the inclination of the difference between the distances from the second holding portion 41 at both ends of the diameter to about 10 μm. In FIG. 4, the bending of the connecting portion 323, the inclination of the first substrate 91 and the second substrate 92, and the distance between the lower surface of the member 311 and the fixing member 312 are drawn larger than actual.

なお、基板接合装置１では、第２保持部４１のみ、あるいは、第１保持部３１および第２保持部４１の双方がＺ方向に移動することにより、第１基板９１が第２基板９２に対して相対的に近づけられて第１基板９１と第２基板９２との接合が行われてもよい。 In the substrate bonding apparatus 1, only the second holding unit 41 or both the first holding unit 31 and the second holding unit 41 move in the Z direction, whereby the first substrate 91 is moved relative to the second substrate 92. Thus, the first substrate 91 and the second substrate 92 may be joined together relatively close to each other.

第１基板９１と第２基板９２との接合が完了すると、第１保持部３１による第１基板９１の吸着が解除され、第１保持部３１が（＋Ｚ）側へと上昇して第１基板９１から離れる。このとき、連結部３２３が元の状態に戻って部材３１１の下面と固定部材３１２の先端部とが当接し、第１保持部３１が押圧前の初期位置に戻される。そして、環境調整機構２１によりチャンバ２内にエアが供給された後にチャンバ２のゲートが開放され、第１基板９１および第２基板９２がチャンバ２外に搬出されて第１基板９１および第２基板９２の接合が終了する。 When the bonding of the first substrate 91 and the second substrate 92 is completed, the suction of the first substrate 91 by the first holding unit 31 is released, and the first holding unit 31 rises to the (+ Z) side and the first substrate Leave 91. At this time, the connecting portion 323 returns to the original state, the lower surface of the member 311 and the tip of the fixing member 312 come into contact, and the first holding portion 31 is returned to the initial position before pressing. Then, after air is supplied into the chamber 2 by the environment adjusting mechanism 21, the gate of the chamber 2 is opened, and the first substrate 91 and the second substrate 92 are carried out of the chamber 2, and the first substrate 91 and the second substrate are discharged. 92 joining is completed.

以上に説明したように、基板接合装置１では、第１保持部３１と保持部昇降機構３４との間に設けられる平行度調整部３２において、第１基板９１を保持する第１保持部３１に接続された中央部３２１と、取付部３３を介して保持部昇降機構３４に接続された外周部３２２とが、可撓性を有する連結部３２３により連結されている。これにより、第１基板９１の第２基板９２に対する押圧時に、第１基板９１の下面９１１と第２基板９２の上面９２１との平行度を調整して第１基板９１の下面９１１を第２基板９２の上面９２１に倣わせることができる。 As described above, in the substrate bonding apparatus 1, the parallelism adjusting unit 32 provided between the first holding unit 31 and the holding unit lifting mechanism 34 has the first holding unit 31 that holds the first substrate 91. The connected central part 321 and the outer peripheral part 322 connected to the holding part lifting mechanism 34 via the attachment part 33 are connected by a flexible connecting part 323. Accordingly, when the first substrate 91 is pressed against the second substrate 92, the parallelism between the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 is adjusted, and the lower surface 911 of the first substrate 91 is adjusted to the second substrate 92. The upper surface 921 of 92 can be imitated.

このように、基板接合装置１では、基板の平行度の調整に球面軸受等を利用する場合に比べて、平行度の調整に係る機構（すなわち、平行度調整部３２）の構造を簡素化することができるとともに、第１基板９１の下面９１１と第２基板９２の上面９２１との平行度を精度良く調整しつつ第１基板９１を第２基板９２に対して均等に押圧することができる。その結果、第１基板９１と第２基板９２との接合の質を向上することができる。また、基板の接合に先立って行われる基板接合装置１の調整時に、第１保持部３１の下面と第２保持部４１の上面との平行度を厳密に調整する必要がないため、基板接合装置１の調整に係る作業時間および労力を低減することができる。 As described above, in the substrate bonding apparatus 1, the structure of the mechanism related to the adjustment of the parallelism (that is, the parallelism adjustment unit 32) is simplified as compared with the case where the spherical bearing or the like is used for the adjustment of the parallelism of the substrate. In addition, the first substrate 91 can be evenly pressed against the second substrate 92 while accurately adjusting the parallelism between the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92. As a result, the bonding quality between the first substrate 91 and the second substrate 92 can be improved. Further, when adjusting the substrate bonding apparatus 1 prior to the bonding of the substrates, it is not necessary to strictly adjust the parallelism between the lower surface of the first holding unit 31 and the upper surface of the second holding unit 41. The work time and labor related to the adjustment of 1 can be reduced.

基板接合装置１では、平行度調整部３２の中央部３２１と外周部３２２とが、連結部３２３により中心軸３２０を中心とする周方向において等間隔にて連結されるため、保持部昇降機構３４から外周部３２２に加えられた力が、周方向において均等に中央部３２１に伝達される。これにより、第１基板９１を第２基板９２に対してより均等に押圧することができる。また、平行度調整部３２の中央部３２１および外周部３２２が中心軸３２０を中心として軸対称であるため、第１基板９１を第２基板９２に対してさらに均等に押圧することができ、その結果、第１基板９１と第２基板９２との接合の質をさらに向上することができる。 In the substrate bonding apparatus 1, the central portion 321 and the outer peripheral portion 322 of the parallelism adjusting unit 32 are connected by the connecting portion 323 at equal intervals in the circumferential direction around the central axis 320. The force applied to the outer peripheral portion 322 from the center is transmitted to the central portion 321 evenly in the circumferential direction. As a result, the first substrate 91 can be pressed evenly against the second substrate 92. Moreover, since the central part 321 and the outer peripheral part 322 of the parallelism adjusting part 32 are axially symmetric about the central axis 320, the first substrate 91 can be pressed evenly against the second substrate 92. As a result, the quality of bonding between the first substrate 91 and the second substrate 92 can be further improved.

平行度調整部３２では、中央部３２１、外周部３２２および連結部３２３の厚さが同じとされるため、平行度調整部３２の構造をより簡素化することができ、その結果、平行度調整部３２をより容易に製造することができる。 In the parallelism adjustment unit 32, the central part 321, the outer peripheral part 322, and the connecting part 323 have the same thickness, so that the structure of the parallelism adjustment part 32 can be further simplified. As a result, the parallelism adjustment is performed. The part 32 can be manufactured more easily.

基板接合装置１では、構造が簡素な平行度調整部３２がチャンバ２内に設けられることにより、チャンバ２内の構造を簡素化することができる。その結果、第１基板９１および第２基板９２に対して照射されるプラズマの分布の均一性を向上して第１基板９１および第２基板９２の接合の質を向上することができる。また、チャンバ２内におけるプラズマの異常放電を防止することもできる。さらには、基板接合装置１の調整やメンテナンスを簡素化することもできる。 In the substrate bonding apparatus 1, the parallelism adjusting unit 32 having a simple structure is provided in the chamber 2, whereby the structure in the chamber 2 can be simplified. As a result, the uniformity of the plasma distribution irradiated to the first substrate 91 and the second substrate 92 can be improved, and the bonding quality of the first substrate 91 and the second substrate 92 can be improved. In addition, abnormal discharge of plasma in the chamber 2 can be prevented. Furthermore, the adjustment and maintenance of the substrate bonding apparatus 1 can be simplified.

以上、本発明の実施の形態について説明してきたが、本発明は上記実施の形態に限定されるものではなく、様々な変更が可能である。 As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment, A various change is possible.

例えば、平行度調整部３２は、金属以外の材料（例えば、樹脂）により形成されてもよく、中央部３２１、外周部３２２および連結部３２３が互いに異なる材料により形成されてもよい。また、中央部３２１、外周部３２２および連結部３２３の厚さは必ずしも同じである必要はなく、例えば、各部が同じ材料により形成されるとともに連結部３２３の厚さが中央部３２１および外周部３２２よりも薄くされることにより、連結部３２３にのみ可撓性が付与されてもよい。 For example, the parallelism adjusting unit 32 may be formed of a material other than metal (for example, resin), and the central portion 321, the outer peripheral portion 322, and the connecting portion 323 may be formed of different materials. In addition, the thickness of the central portion 321, the outer peripheral portion 322, and the connecting portion 323 is not necessarily the same. For example, each portion is formed of the same material, and the thickness of the connecting portion 323 is the central portion 321 and the outer peripheral portion 322. By making it thinner, flexibility may be imparted only to the connecting portion 323.

図５ないし図９は、平行度調整部の他の好ましい例を示す平面図である。図５に示す平行度調整部３２ａでは、円形の中央部３２１と円環状の外周部３２２とが、中心軸３２０を中心とする周方向において１２０°毎に設けられた連結部３２３により連結される。このように、隣接する連結部３２３間の角度は適宜変更されてよい。また、平行度調整部の構造を簡素化するとともに第１基板９１を第２基板９２に対してある程度均等に押圧するという観点のみからは、周方向において隣接する連結部３２３間の複数の間隔が互いに異なるように連結部３２３が設けられてもよい。 5 to 9 are plan views showing other preferable examples of the parallelism adjusting unit. In the parallelism adjusting unit 32 a shown in FIG. 5, the circular central part 321 and the annular outer peripheral part 322 are connected by connecting parts 323 provided every 120 ° in the circumferential direction around the central axis 320. . Thus, the angle between the adjacent connection parts 323 may be changed as appropriate. Further, only from the viewpoint of simplifying the structure of the parallelism adjusting portion and pressing the first substrate 91 against the second substrate 92 to some extent evenly, there are a plurality of intervals between the connecting portions 323 adjacent in the circumferential direction. The connecting portions 323 may be provided so as to be different from each other.

図６に示す平行度調整部３２ｂでは、連結部３２３ａは、中心軸３２０を中心として放射状に広がるとともに中央部３２１と外周部３２２とを連結する８つの直線部３２３１と、中心軸３２０を中心とする径方向における直線部３２３１の中央部近傍にて８つの直線部３２３１を連結する円環部３２３２とを備える。平行度調整部３２ｂでは、中央部３２１と外周部３２２との間に複数の円環部３２３２が設けられてもよい。 In the parallelism adjusting unit 32 b shown in FIG. 6, the connecting part 323 a radially spreads around the central axis 320 and has eight linear parts 3231 that connect the central part 321 and the outer peripheral part 322, and the central axis 320. An annular portion 3232 that connects the eight straight portions 3231 in the vicinity of the central portion of the straight portion 3231 in the radial direction. In the parallelism adjusting unit 32b, a plurality of annular portions 3232 may be provided between the central portion 321 and the outer peripheral portion 322.

図７に示す平行度調整部３２ｃは、中心軸３２０を中心とする周方向において等間隔にて配列された複数の円形の開口が形成された円板状である。平行度調整部３２ｃでは、複数の開口に中心軸３２０側から接する内接円（図７中に二点鎖線にて示す仮想的な円）３２３３よりも内側の円形の部位が中央部３２１に相当し、複数の開口に外側から接する外接円３２３４よりも外側の円環状の部位が外周部３２２に相当する。また、内接円３２３３と外接円３２３４との間の部位（開口を除く。）が、中央部３２１と外周部３２２とを連結する連結部３２３ｂになる。平行度調整部３２ｃでは、円形以外の他の形状（例えば、矩形状）の複数の開口が形成されてもよい。 The parallelism adjusting unit 32c shown in FIG. 7 has a disk shape in which a plurality of circular openings arranged at equal intervals in the circumferential direction around the central axis 320 are formed. In the parallelism adjusting unit 32c, a circular portion inside the inscribed circle (virtual circle indicated by a two-dot chain line in FIG. 7) 3233 that is in contact with the plurality of openings from the central axis 320 side corresponds to the central portion 321. An annular portion outside the circumscribed circle 3234 that contacts the plurality of openings from the outside corresponds to the outer peripheral portion 322. Further, a portion (excluding the opening) between the inscribed circle 3233 and the circumscribed circle 3234 becomes a connecting portion 323b that connects the central portion 321 and the outer peripheral portion 322. In the parallelism adjustment unit 32c, a plurality of openings other than a circle (for example, a rectangular shape) may be formed.

図８および図９に示す平行度調整部３２ｄおよび平行度調整部３２ｅでは、中央部３２１が矩形状とされ、中央部３２１と連結部３２３により連結される外周部３２２が、外周および内周が矩形状である環状とされる。このように、中央部３２１および外周部３２２は、必ずしも円形や円環状のように中心軸を中心として軸対称な形状とされる必要はなく、必要に応じて適宜他の形状とされてもよい。例えば、中央部３２１が楕円形や多角形とされてもよい。 In the parallelism adjusting unit 32d and the parallelism adjusting unit 32e shown in FIGS. 8 and 9, the central part 321 has a rectangular shape, and the outer peripheral part 322 connected by the central part 321 and the connecting part 323 has an outer periphery and an inner peripheral part. It is an annular shape that is rectangular. As described above, the central portion 321 and the outer peripheral portion 322 do not necessarily have an axisymmetric shape around the central axis, such as a circular shape or an annular shape, and may have other shapes as appropriate. . For example, the central portion 321 may be an ellipse or a polygon.

上記実施の形態に係る基板接合装置１では、押圧ヘッド３の取付部３３が円環状とされ、平行度調整部３２の外周部３２２と全周において接続されるが、取付部３３は必ずしも円環状とされる必要はなく、例えば、中心軸３２０を中心とする周方向において均等に配列された複数の部材であってもよい。この場合、第１基板９１の第２基板９２に対する押圧時には、外周部３２２の周方向における複数箇所に対して（−Ｚ）方向の力が加えられる。 In the substrate bonding apparatus 1 according to the above-described embodiment, the attachment portion 33 of the pressing head 3 has an annular shape and is connected to the outer peripheral portion 322 of the parallelism adjustment portion 32 on the entire circumference, but the attachment portion 33 is not necessarily annular. For example, a plurality of members arranged uniformly in the circumferential direction around the central axis 320 may be used. In this case, when the first substrate 91 is pressed against the second substrate 92, a force in the (−Z) direction is applied to a plurality of locations in the circumferential direction of the outer peripheral portion 322.

また、基板接合装置１では、平行度調整部３２の中央部３２１が第１保持部３１に接続され、外周部３２２が取付部３３に接続されているが、逆に、中央部３２１が取付部３３に接続され、外周部３２２が第１保持部３１に接続されてもよい。この場合であっても、平行度調整部３２の構造を簡素化することができるとともに、第１基板９１の下面９１１と第２基板９２の上面９２１との平行度を精度良く調整しつつ第１基板９１を第２基板９２に対して均等に押圧することができる。 In the substrate bonding apparatus 1, the central part 321 of the parallelism adjusting part 32 is connected to the first holding part 31, and the outer peripheral part 322 is connected to the attaching part 33, but conversely, the central part 321 is the attaching part. 33 and the outer peripheral part 322 may be connected to the first holding part 31. Even in this case, the structure of the parallelism adjusting unit 32 can be simplified, and the first parallelism between the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 is accurately adjusted. The substrate 91 can be pressed evenly against the second substrate 92.

基板接合装置１では、取付部３３および平行度調整部３２がチャンバ２外に設けられ、平行度調整部３２と第１保持部３１とがチャンバ２を貫通するシャフト等を介して接続されてもよい。これにより、チャンバ２内の構造をさらに簡素化することができる。 In the substrate bonding apparatus 1, the attachment portion 33 and the parallelism adjusting portion 32 are provided outside the chamber 2, and the parallelism adjusting portion 32 and the first holding portion 31 are connected via a shaft or the like that penetrates the chamber 2. Good. Thereby, the structure in the chamber 2 can be further simplified.

基板接合装置１では、第１基板９１および第２基板９２の位置合わせに係る機構も、チャンバ２の外部に設けられてもよい。例えば、チャンバ２の下面に窓部が設けられ、第１基板９１を撮像する撮像部が当該窓部の下側に設けられてもよい。この場合、チャンバ２外に配置された光源から出射された赤外光が、窓部および第２保持部４１に設けられた貫通孔を介して、さらに、第２基板９２を透過して第１基板９１の下面９１１に照射される。そして、第１基板９１の下面９１１上のパターンからの反射光が、第２基板９２、第２保持部４１の貫通孔および窓部を介してチャンバ２外へと導かれて撮像部により受光されることにより、第１基板９１の撮像が行われる。また、第２保持部４１を移動および回動する保持部移動機構４２および保持部回動機構４３が、チャンバ２の外部において第２保持部４１の下側に設けられてもよい。 In the substrate bonding apparatus 1, a mechanism related to the alignment of the first substrate 91 and the second substrate 92 may also be provided outside the chamber 2. For example, a window part may be provided on the lower surface of the chamber 2, and an imaging part for imaging the first substrate 91 may be provided below the window part. In this case, the infrared light emitted from the light source arranged outside the chamber 2 is further transmitted through the second substrate 92 through the through holes provided in the window part and the second holding part 41, and the first light is transmitted. The lower surface 911 of the substrate 91 is irradiated. Then, the reflected light from the pattern on the lower surface 911 of the first substrate 91 is guided out of the chamber 2 through the second substrate 92, the through hole and the window of the second holding unit 41, and received by the imaging unit. As a result, the first substrate 91 is imaged. Further, the holding unit moving mechanism 42 and the holding unit rotating mechanism 43 that move and rotate the second holding unit 41 may be provided below the second holding unit 41 outside the chamber 2.

第１保持部３１において第１基板９１を保持する機構は、プラズマ洗浄処理が行われる減圧環境下または不活性ガス環境下において第１基板９１を上側から保持することができるのであれば、真空ポンプに連結された吸引路による吸引吸着であってもよく、また、メカニカルチャックにより第１基板９１が保持されてもよい（第２保持部４１における第２基板９２の保持機構についても同様）。 The mechanism for holding the first substrate 91 in the first holding unit 31 is a vacuum pump as long as the first substrate 91 can be held from above in a reduced pressure environment or an inert gas environment where the plasma cleaning process is performed. The first substrate 91 may be held by a mechanical chuck (the same applies to the holding mechanism of the second substrate 92 in the second holding unit 41).

チャンバ２内において第１基板９１の下面９１１および第２基板９２の上面９２１に照射されるエネルギー波は、必ずしもプラズマには限定されず、例えば、高速原子ビーム（ＦＡＢ（Fast Atom Beam））やイオンビーム等により両基板の当接領域に対する洗浄処理が行われてもよい。また、両基板の当接領域に紫外線を照射して洗浄処理を行った後、基板に熱または超音波を付与しつつ当接領域を接触させて押圧することにより、両基板の接合が行われてもよい。洗浄処理に使用されるガスはアルゴンには限定されず、窒素、酸素、フッ素、水素等であってもよい。また、エネルギー波の照射は、第１基板９１および第２基板９２のいずれか一方の当接領域のみに対して行われてもよい。なお、第１基板９１の当接領域は、必ずしも下面９１１全面には限定されない（第２基板９２においても同様）。 The energy waves irradiated on the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 in the chamber 2 are not necessarily limited to plasma. For example, a fast atom beam (FAB (Fast Atom Beam)) or ion is used. A cleaning process may be performed on the contact area of both substrates with a beam or the like. In addition, after performing the cleaning process by irradiating the contact area of both substrates with ultraviolet rays, the two substrates are bonded by contacting and pressing the contact area while applying heat or ultrasonic waves to the substrates. May be. The gas used for the cleaning treatment is not limited to argon, and may be nitrogen, oxygen, fluorine, hydrogen, or the like. Further, the energy wave irradiation may be performed only on one of the contact regions of the first substrate 91 and the second substrate 92. The contact area of the first substrate 91 is not necessarily limited to the entire lower surface 911 (the same applies to the second substrate 92).

基板接合装置１による第１基板９１と第２基板９２との接合は、必ずしもエネルギー波による表面改質後の接触により行われる必要はなく、例えば、第１基板９１および第２基板９２を加熱しつつ第１基板９１を第２基板９２に向けて押圧することにより行われてもよい。この場合、チャンバ２は適宜省略されてもよい。 The bonding of the first substrate 91 and the second substrate 92 by the substrate bonding apparatus 1 is not necessarily performed by the contact after the surface modification by the energy wave. For example, the first substrate 91 and the second substrate 92 are heated. However, it may be performed by pressing the first substrate 91 toward the second substrate 92. In this case, the chamber 2 may be omitted as appropriate.

基板接合装置１は、半導体基板同士の接合に利用される他、半導体基板と他の種類の基板（例えば、セラミック基板）との接合に利用されてもよく、また、半導体基板以外の他の種類の基板（例えば、金属基板）同士の接合に利用されてもよい。また、基板接合装置１により接合される基板は、円板状以外の他の形状（例えば、矩形の薄板状）であってもよい。 The substrate bonding apparatus 1 may be used for bonding between a semiconductor substrate and another type of substrate (for example, a ceramic substrate), in addition to being used for bonding between semiconductor substrates. These substrates (for example, metal substrates) may be used for bonding. Moreover, the board | substrate joined by the board | substrate joining apparatus 1 may be shapes other than disk shape (for example, rectangular thin plate shape).

基板接合装置１の構成は、比較的大きい外形を有するために接合時の平行度の調整が重要となる基板同士の接合に適しているが、基板の接合以外にも、一の対象物を他の対象物に向けて押圧する他の装置に適用することもできる。例えば、基板に比べて小さい電子部品であってバンプを有するものを回路基板に向けて押圧して実装する電子部品の実装装置に利用されてもよい。この場合、電子部品のバンプの下面、および、回路基板の電極の表面が、実装装置にて扱われる２つの対象物の当接領域となる。また、基板接合装置１の構成は、回路基板に向けてＡＣＦ（異方導電性樹脂フィルム）を押圧して貼付する装置に利用されてもよい。 The configuration of the substrate bonding apparatus 1 is suitable for bonding between substrates in which adjustment of parallelism at the time of bonding is important because of having a relatively large outer shape. It can also be applied to other devices that press toward the object. For example, the present invention may be used in an electronic component mounting apparatus that presses and mounts electronic components that are smaller than a substrate and have bumps toward a circuit board. In this case, the lower surface of the bump of the electronic component and the surface of the electrode of the circuit board serve as a contact area between the two objects handled by the mounting apparatus. Moreover, the structure of the board | substrate joining apparatus 1 may be utilized for the apparatus which presses and affixes ACF (anisotropic conductive resin film) toward a circuit board.

さらには、基板接合装置１の構成は、電子部品や回路基板上に形成された複数のバンプの頂部をレベリングプレートにより押圧してバンプの高さを揃えるレベリング装置に利用されてもよい。この場合、レベリングプレートのバンプに当接する主面、および、複数のバンプの頂部が、レベリング装置にて扱われる２つの対象物の当接領域となる。 Furthermore, the structure of the board | substrate joining apparatus 1 may be utilized for the leveling apparatus which presses the top part of the some bump formed on the electronic component or the circuit board with a leveling plate, and arranges the height of a bump. In this case, the main surface that comes into contact with the bumps of the leveling plate and the tops of the plurality of bumps serve as contact regions for the two objects handled by the leveling device.

本発明は、基板を他の基板に向けて押圧して接合する基板接合装置を始め、対象物を他の対象物に向けて押圧する様々な技術に利用可能である。 INDUSTRIAL APPLICABILITY The present invention can be used for various techniques for pressing a substrate toward another object, including a substrate bonding apparatus that bonds a substrate by pressing it toward another substrate.

基板接合装置を示す正面図Front view showing board bonding equipment 平行度調整部を示す平面図Plan view showing the parallelism adjustment unit 第１基板と第２基板との接合動作の流れを示す図The figure which shows the flow of joining operation | movement of a 1st board | substrate and a 2nd board | substrate. 基板接合装置を示す正面図Front view showing board bonding equipment 平行度調整部の他の好ましい例を示す平面図The top view which shows the other preferable example of a parallelism adjustment part 平行度調整部の他の好ましい例を示す平面図The top view which shows the other preferable example of a parallelism adjustment part 平行度調整部の他の好ましい例を示す平面図The top view which shows the other preferable example of a parallelism adjustment part 平行度調整部の他の好ましい例を示す平面図The top view which shows the other preferable example of a parallelism adjustment part 平行度調整部の他の好ましい例を示す平面図The top view which shows the other preferable example of a parallelism adjustment part

符号の説明Explanation of symbols

１基板接合装置
２チャンバ
３１第１保持部
３２，３２ａ〜３２ｅ平行度調整部
３３取付部
３４保持部昇降機構
４１第２保持部
９１第１基板
９２第２基板
３２０中心軸
３２１中央部
３２２外周部
３２３，３２３ａ，３２３ｂ連結部
９１１下面
９２１上面
Ｓ１１〜Ｓ１８ステップ DESCRIPTION OF SYMBOLS 1 Substrate bonding apparatus 2 Chamber 31 1st holding | maintenance part 32, 32a-32e Parallelism adjustment part 33 Attaching part 34 Holding | maintenance part raising / lowering mechanism 41 2nd holding | maintenance part 91 1st board | substrate 92 2nd board | substrate 320 Central axis 321 Central part 322 Outer peripheral part 323, 323a, 323b connecting portion 911 lower surface 921 upper surface S11-S18 step

Claims

第１対象物を第２対象物に向けて押圧する押圧装置であって、
第１対象物を保持する第１保持部と、
前記第１対象物の第１当接領域を第２対象物の第２当接領域に対向させつつ前記第２対象物を保持する第２保持部と、
前記第１保持部を前記第２保持部に向けて相対的に移動することにより前記第１対象物を前記第２対象物に向けて押圧する押圧機構と、
前記第１保持部の押圧方向に関して前記第１保持部と所定の取付部との間に配置されて前記第１保持部と前記取付部とを接続するとともに、前記第１対象物の前記第２対象物への押圧時に前記第１当接領域を前記第２当接領域に倣わせる板状の平行度調整部と、
を備え、
前記平行度調整部が、
前記第１保持部の前記押圧方向に関して前記第１対象物に重なるとともに前記第１保持部および前記取付部のいずれか一方に接続される中央部と、
前記中央部の外側に位置し、前記第１保持部および前記取付部の他方に接続される外周部と、
前記中央部と前記外周部とを連結するとともに可撓性を有する連結部と、
を備えることを特徴とする押圧装置。 A pressing device that presses the first object toward the second object,
A first holding unit for holding a first object;
A second holding unit for holding the second object while making the first contact area of the first object face the second contact area of the second object;
A pressing mechanism that presses the first object toward the second object by relatively moving the first holding part toward the second holding part; and
It arrange | positions between the said 1st holding | maintenance part and a predetermined attachment part regarding the pressing direction of the said 1st holding | maintenance part, and connects the said 1st holding | maintenance part and the said attachment part, and said 2nd of a said 1st target object. A plate-like parallelism adjustment unit that causes the first contact area to follow the second contact area when pressed against an object;
With
The parallelism adjusting unit is
A central portion that overlaps the first object with respect to the pressing direction of the first holding portion and is connected to either the first holding portion or the attachment portion;
An outer peripheral part located outside the central part and connected to the other of the first holding part and the attachment part;
A connecting part that connects the central part and the outer peripheral part and has flexibility;
A pressing device comprising:

請求項１に記載の押圧装置であって、
前記平行度調整部の前記連結部が、前記第１対象物の前記中心を通り前記押圧方向に平行な所定の中心軸を中心とする周方向において前記中央部と前記外周部とを等間隔にて連結することを特徴とする押圧装置。 The pressing device according to claim 1,
The connecting portion of the parallelism adjusting portion has the central portion and the outer peripheral portion at equal intervals in a circumferential direction centering on a predetermined central axis passing through the center of the first object and parallel to the pressing direction. And a pressing device characterized by being connected.

請求項２に記載の押圧装置であって、
前記平行度調整部の前記中央部および前記外周部が、前記中心軸を中心として軸対称であることを特徴とする押圧装置。 The pressing device according to claim 2,
The pressing device according to claim 1, wherein the central portion and the outer peripheral portion of the parallelism adjusting portion are axisymmetric about the central axis.

請求項１ないし３のいずれかに記載の押圧装置であって、
前記中央部、前記連結部および前記外周部の厚さが同じであることを特徴とする押圧装置。 The pressing device according to any one of claims 1 to 3,
The pressing device, wherein the central portion, the connecting portion, and the outer peripheral portion have the same thickness.

請求項１ないし４のいずれかに記載の押圧装置であって、
前記押圧機構による押圧により前記第１当接領域と前記第２当接領域とが接合されることを特徴とする押圧装置。 The pressing device according to any one of claims 1 to 4,
The pressing device, wherein the first contact region and the second contact region are joined by pressing by the pressing mechanism.

請求項５に記載の押圧装置であって、
前記第１保持部に保持された前記第１対象物および前記第２保持部に保持された前記第２対象物を外気から隔離するチャンバをさらに備え、
前記第１対象物の前記第２対象物に対する押圧が、減圧または不活性ガス環境とされた前記チャンバ内において行われることを特徴とする押圧装置。 The pressing device according to claim 5,
A chamber for isolating the first object held by the first holding unit and the second object held by the second holding unit from outside air;
The pressing device according to claim 1, wherein the pressing of the first object against the second object is performed in the chamber in a reduced pressure or inert gas environment.

請求項５または６に記載の押圧装置であって、
前記第１対象物および前記第２対象物の少なくとも一方が半導体基板であることを特徴とする押圧装置。 The pressing device according to claim 5 or 6,
At least one of the first object and the second object is a semiconductor substrate.

第１対象物を第２対象物に向けて押圧する押圧方法であって、
ａ）所定の押圧方向に関して取付部との間に配置された板状の平行度調整部を介して前記取付部に接続される保持部により第１対象物を保持する工程と、
ｂ）前記第１対象物の第１当接領域を第２対象物の第２当接領域に対向させつつ前記第２対象物を保持する工程と、
ｃ）前記保持部を前記第２対象物に向けて相対的に移動することにより、前記第１当接領域を前記第２当接領域に倣わせつつ前記第１対象物を前記第２対象物に向けて押圧する工程と、
を備え、
前記平行度調整部が、
前記保持部の前記押圧方向に関して前記第１対象物に重なるとともに前記保持部よび前記取付部のいずれか一方に接続される中央部と、
前記中央部の外側に位置し、前記保持部および前記取付部の他方に接続される外周部と、
前記中央部と前記外周部とを接続するとともに可撓性を有する連結部と、
を備えることを特徴とする押圧方法。 A pressing method of pressing a first object toward a second object,
a) holding the first object by a holding part connected to the attaching part via a plate-like parallelism adjusting part arranged between the attaching part with respect to a predetermined pressing direction;
b) holding the second object while making the first contact area of the first object face the second contact area of the second object;
c) By moving the holding portion relative to the second object, the first object is moved to the second object while the first contact area follows the second contact area. Pressing toward
With
The parallelism adjusting unit is
A central portion that overlaps the first object with respect to the pressing direction of the holding portion and is connected to one of the holding portion and the attachment portion,
An outer peripheral part located outside the central part and connected to the other of the holding part and the mounting part;
A connecting portion that connects the central portion and the outer peripheral portion and has flexibility;
A pressing method characterized by comprising: