JP2006339334A - Method and device for junction of fine electric/electronic element - Google Patents
Method and device for junction of fine electric/electronic element Download PDFInfo
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この出願の発明は、微小電気・電子素子を基板上に設けられた電極に接合する方法及び装置に関するものである。より詳しくは、この出願の発明は、微小な半導体素子やバンプ接合電極のような微小電気・電子素子を配線基板の電極や金属バッド電極へ搭載・接合するための方法及び装置に関するものである。 The invention of this application relates to a method and apparatus for bonding a microelectric / electronic element to an electrode provided on a substrate. More specifically, the invention of this application relates to a method and an apparatus for mounting and bonding a minute electric / electronic element such as a minute semiconductor element or a bump bonding electrode to an electrode of a wiring board or a metal bad electrode.
従来より、半導体素子等のリード電極やパッド電極を基板に接合する場合、あらかじめ半導体素子等が配置・搭載された基板をリフロー炉に入れて、熱風や赤外線等を用いてこれを加熱することにより一括接合する手法が使用されてきた。今後、基板等に搭載する半導体素子等の小型化・集積化が一層進み、高密度実装の傾向（非特許文献１）が加速されると、半導体素子等内でのリード電極間の間隔あるいはパッド電極間の間隔が狭くなり、接合処理に際して発生するこれら狭窄した配線スペース間でのブリッジが深刻な問題となることが容易に想定できる。 Conventionally, when a lead electrode or pad electrode of a semiconductor element or the like is bonded to a substrate, the substrate on which the semiconductor element or the like is arranged and mounted in advance is placed in a reflow furnace and heated by using hot air or infrared rays. A technique of batch joining has been used. In the future, as semiconductor elements mounted on substrates and the like are further miniaturized and integrated, and the tendency for high-density mounting (Non-Patent Document 1) is accelerated, the distance between pads or pads in the semiconductor elements etc. It can be easily assumed that the gap between the electrodes becomes narrow and a bridge between these narrowed wiring spaces generated during the bonding process becomes a serious problem.
またハンダボール等で電気的な接合をはかるＢＧＡ（ボール・グリッド・アレイ）方式においては、リフロー炉による接合処理の温度が３００℃以下であることから、ハンダの表面で生成しているハンダ酸化物が溶融したハンダ内に取り込まれて、接合部の電気抵抗を上昇させる要因となっている。今後、搭載部品の小型化が進むとともに、ハンダボールのサイズも小型化が進むことは避けられない。このことはハンダボールの体積に対する表面積の割合の増大を意味し、ハンダとハンダ酸化物との比率が酸化物サイドに大きく傾いていき、その結果として接合部の電気抵抗が大きく上昇していくことを示唆している。 Also, in the BGA (ball grid array) system that performs electrical bonding with solder balls or the like, the soldering oxide formed on the surface of the solder because the temperature of the bonding process in the reflow furnace is 300 ° C. or lower. Is taken into the melted solder, which increases the electrical resistance of the joint. In the future, it will be inevitable that the size of the mounted parts will be reduced and the size of the solder balls will also be reduced. This means an increase in the ratio of the surface area to the volume of the solder ball, and the ratio of solder to solder oxide is greatly inclined toward the oxide side, and as a result, the electrical resistance of the joint is greatly increased. It suggests.
近年、利用が増大している半導体化セラミクス素子においても、小型化・集積化により上記と同様な問題が生じてくる。
しかしながら、上記従来技術では、小型化・集積化に伴う狭窄した配線スペース間でのブリッジに対する有効な対策がとられていない。 However, in the above prior art, an effective measure against a bridge between narrowed wiring spaces due to downsizing and integration is not taken.
また、半導体素子等と基板を接合する現在の一括接合処理においては、接合時にこれらハンダ酸化物を処理し接合部の電気抵抗の上昇を防ぐ有効な手段は持ち合わせていない。 Further, in the current collective bonding process for bonding a semiconductor element or the like to a substrate, there is no effective means for treating these solder oxides at the time of bonding to prevent an increase in electrical resistance of the bonded portion.
この出願は、以上のとおりの事情に鑑みてなされたもので、小型化・集積化に伴う半導体素子等の実装プロセスにおける要求に応え、微小なバンプ接合電極や半導体化セラミクス粒子のような微小電気・電子素子を、ブリッジを生じさせずに、また酸化物生成に起因する接合部の電気抵抗の上昇を防止して配線基板の電極や金属バッド電極へ搭載・接合するための新規な微小電気・電子素子の接合方法及び接合装置を提供することを課題とする。 This application was made in view of the circumstances as described above. In response to the demand in the mounting process of semiconductor elements and the like accompanying miniaturization and integration, a micro-electricity such as a micro-bump bonding electrode and semi-conducting ceramic particles is provided. New micro-electricity for mounting and bonding electronic devices to wiring board electrodes and metal pad electrodes without causing bridging and preventing increase in electrical resistance of the junction due to oxide formation It is an object to provide a bonding method and a bonding apparatus for an electronic element.
この出願の発明は、上記課題を解決するものとして、第１には、基板上に設けられた電極上に微小電気・電子素子を当接させた状態で、中央に尖った先端が突出した高融点材製の導電性放電プローブが取り付けられるとともにその周囲に配置された作動ガスの吹き付
け手段を持つトーチ型電極を用い、トーチ型電極の導電性放電プローブを微小電気・電子素子と接触配置するか又は一定距離だけ離間配置し、作動ガスをトーチ型電極の導電性放電プローブの長さ方向に沿って供給しながら導電性放電プローブと基板上の電極との間に高電圧を印加して放電を発生させ、その熱エネルギーにより微小電気・電子素子を基板上の電極に接合させることを特徴とする微小電気・電子素子の接合方法を提供する。
In order to solve the above-mentioned problems, the invention of this application is as follows. First, in a state where a minute electric / electronic element is brought into contact with an electrode provided on a substrate, a high point with a sharp tip protruding in the center is provided. Whether a conductive discharge probe made of a melting point material is attached and a torch-type electrode having a working gas spraying means arranged around it is used, and the conductive discharge probe of the torch-type electrode is placed in contact with a micro electric / electronic element. Alternatively, it is spaced apart by a certain distance, and discharge is performed by applying a high voltage between the conductive discharge probe and the electrode on the substrate while supplying the working gas along the length direction of the conductive discharge probe of the torch electrode. There is provided a method for bonding a micro electric / electronic element, characterized in that the micro electric / electronic element is bonded to an electrode on a substrate by the generated thermal energy.
また、第２には、上記第１の発明において、作動ガスとして、不活性ガスと還元性ガスとの混合ガスを用いることを特徴とする微小電気・電子素子の接合方法を提供する。 According to a second aspect of the present invention, there is provided a method for joining micro-electric / electronic elements, characterized in that, in the first invention, a mixed gas of an inert gas and a reducing gas is used as the working gas.
また、第３には、上記第１又は第２の発明において、トーチ型電極として、導電性放電プローブの先端で微小電気・電子素子を静電気力あるいは真空吸着力により吸着し、移動及び位置決めを行うマニュピレータ機能を有するものを用いることを特徴とする微小電気・電子素子の接合方法を提供する。 According to a third aspect of the present invention, in the first or second aspect of the invention, as a torch-type electrode, a minute electric / electronic element is adsorbed by electrostatic force or vacuum adsorption force at the tip of a conductive discharge probe, and moved and positioned. Provided is a method for joining micro electric / electronic elements characterized by using a manipulator function.
また、第４には、上記第１から第３のいずれかの発明において、パルス状高電圧を印加することにより、放電を間欠的に繰り返し行うことを特徴とする微小電気・電子素子の接合方法を提供する。 According to a fourth aspect of the present invention, in any one of the first to third aspects of the invention, the discharge is intermittently repeated by applying a pulsed high voltage. I will provide a.
また、第５には、上記第４の発明において、パルス状高電圧の印加を、放電電圧の波高値、パルス幅及びデューティ比を制御して行うことを特徴とする微小電気・電子素子の接合方法を提供する。 According to a fifth aspect of the present invention, in the fourth invention, the application of the pulsed high voltage is performed by controlling the peak value of the discharge voltage, the pulse width, and the duty ratio. Provide a method.
また、第６には、微小電気・電子素子を基板上に設けられた電極と接合させるための装置であって、中央に尖った先端が突出した高融点材製の導電性放電プローブが取り付けられるとともにその周囲に配置された作動ガスの吹き付け手段を持つトーチ型電極と、導電性放電プローブと基板に設けられた電極との間に高電圧を印加する直流高電圧電源と、微小電気・電子素子を包み込むように導電性放電プローブの長さ方向に沿って作動ガスを供給する作動ガス供給部を備え、導電性放電プローブを微小電気・電子素子と接触配置するか又は一定距離だけ離間配置し、作動ガス供給部により作動ガスを供給しながら直流高電圧電源により導電性放電プローブと基板上の電極との間に高電圧を印加して放電を発生させ、その熱エネルギーにより微小電気・電子素子を基板上の電極に接合させることを特徴とする微小電気・電子素子の接合装置を提供する。 The sixth is a device for joining a micro electric / electronic element to an electrode provided on a substrate, and a conductive discharge probe made of a high melting point material having a sharp pointed tip projecting to the center is attached. And a torch type electrode having a working gas spraying means disposed around it, a DC high voltage power source for applying a high voltage between the conductive discharge probe and the electrode provided on the substrate, and a micro electric / electronic element A working gas supply unit for supplying a working gas along the length direction of the conductive discharge probe so as to wrap the electrode, and the conductive discharge probe is arranged in contact with the micro electric / electronic element or spaced apart by a certain distance, While supplying the working gas from the working gas supply unit, a high voltage is applied between the conductive discharge probe and the electrode on the substrate by the DC high voltage power source to generate a discharge, and the heat energy causes a slight discharge. Providing a bonding apparatus of the micro electric and electronic device characterized by bonding the electric and electronic element to electrodes on the substrate.
また、第７には、上記第６の発明において、作動ガス供給部が、不活性ガスと還元ガスとの混合ガスを供給するものであることを特徴とする微小電気・電子素子の接合装置を提供する。 According to a seventh aspect of the present invention, there is provided a bonding apparatus for a micro electric / electronic element according to the sixth aspect, wherein the working gas supply unit supplies a mixed gas of an inert gas and a reducing gas. provide.
また、第８には、上記第６又は第７の発明において、トーチ型電極が、導電性放電プローブの先端で微小電気・電子素子を静電気力あるいは真空吸着力により吸着し、移動及び位置決めを行うマニュピレータ機能を有することを特徴とする微小電気・電子素子の接合装置を提供する。 Eighthly, in the sixth or seventh invention, the torch-type electrode adsorbs the minute electric / electronic element at the tip of the conductive discharge probe by electrostatic force or vacuum adsorption force, and moves and positions it. Provided is a bonding apparatus for micro electric / electronic elements, which has a manipulator function.
また、第９には、上記第６から第８のいずれかの発明において、直流高電圧電源が、パルス状高電圧を印加することができる電源であることを特徴とする微小電気・電子素子の接合装置を提供する。 Ninth, in any of the sixth to eighth inventions, the DC high-voltage power supply is a power supply that can apply a pulsed high voltage. A joining apparatus is provided.
さらに、第１０には、上記第９の発明において、直流高電圧電源が、パルス状高電圧の印加を、放電電圧の波高値、パルス幅及びデューティ比を制御して行うことができるものであることを特徴とする微小電気・電子素子の接合装置を提供する。 Tenth, in the ninth invention, the DC high-voltage power supply can apply a pulsed high voltage by controlling a peak value, a pulse width, and a duty ratio of the discharge voltage. The present invention provides a bonding apparatus for micro electric / electronic elements.
この出願の発明によれば、先が尖った導電性放電プローブ（導電性針）を用い、作動ガスを供給しながら放電により局所及び急速加熱を行うため、小型化・集積化に伴う半導体素子等の実装プロセスにおける要求に応えることができ、バンプ接合電極や半導体化セラミクス素子のような微小電気・電子素子を、ブリッジを生じさせずに、配線基板上の電極や金属パッド電極へ搭載・接合することが可能となる。 According to the invention of this application, a conductive discharge probe (conductive needle) having a sharp point is used to perform local and rapid heating by discharging while supplying a working gas. It is possible to meet the requirements in the mounting process, and mount and bond micro electrical / electronic elements such as bump bonding electrodes and semiconducting ceramic elements to electrodes on the wiring board and metal pad electrodes without causing bridges. It becomes possible.
また、大気圧下での接合のため、接合のために特別な容器を必要とせず、既設の製造ライン中への組み入れが容易となる。 Further, since the bonding is performed under atmospheric pressure, a special container is not required for the bonding, and the incorporation into the existing production line is facilitated.
また、局所的な急速加熱及び急速冷却を利用しての接合のため、ハンダ酸化物等の溶融をも可能とし、酸化物生成に起因する接合部の電気抵抗の上昇を防止することができる。 Further, since bonding is performed using local rapid heating and rapid cooling, it is possible to melt solder oxide and the like, and to prevent an increase in electrical resistance of the bonded portion due to oxide generation.
また、作動ガス中に適当な還元ガスを混合することにより、たとえば酸化被膜を還元しながらの接合が可能となる。 Further, by mixing an appropriate reducing gas in the working gas, for example, joining while reducing the oxide film is possible.
また、パルス状の放電電圧の波高値、パルス幅及びデューティ比（パルスの休止と供給時の比）の制御により、３０００Ｋを超える放電の温度にもかかわらず、基板を傷めることなく接合を行うことができる上、放電エネルギーの制御を容易とし、接合処理の確度を上げることができる。 Also, bonding is performed without damaging the substrate despite the discharge temperature exceeding 3000K by controlling the peak value, pulse width and duty ratio (ratio between pulse pause and supply) of the pulsed discharge voltage. In addition, the discharge energy can be easily controlled and the accuracy of the bonding process can be increased.
また、トーチ型電極に微小電気・電子素子を個別に吸着、移動、位置決めする等のマニュピレータ機能を持たせることにより、一括接合処理等で生じた搭載微小電気・電子素子の位置ズレ等を個別に修正していくことも可能となる。 In addition, by providing manipulator functions such as individually attracting, moving, and positioning micro electric / electronic elements to the torch type electrode, the positional deviation of the mounted micro electric / electronic elements caused by batch bonding processing etc. can be individually controlled. It is also possible to make corrections.
また、基板全体を加熱することなく接合が行えるので、微小電気・電子素子のふくらみや散りといった悪影響となる現象の発生を防止することができる。 In addition, since bonding can be performed without heating the entire substrate, it is possible to prevent the occurrence of adverse effects such as swelling and scattering of microelectric / electronic elements.
さらに、微小な接合対象部のみが局所的に高温となるため、特に専用の冷却機構を設けなくとも短時間で冷却され、作業時間が短縮できる利点もある。 In addition, since only the minute joining target portion is locally heated, there is an advantage that the working time can be shortened by cooling in a short time without providing a special cooling mechanism.
この出願の発明は上記のとおりの特徴をもつものであるが、以下にその実施の形態について説明する。 The invention of this application has the features as described above, and an embodiment thereof will be described below.
この出願の発明では、導電性放電プローブ（導電性針）を備えたトーチ型電極を用い、作動ガスを吹き付けながら放電を行い、基板に設けられた電極上に微小電気・電子素子を接合させる。ここで、微小電気・電子素子とは、典型的には、たとえば半導体集積回路等の製造に使用されるバンプ接合電極や半導体化セラミクス粒子等の粒子状素子や、直方体の電子セラミクスデバイス（セラミクスコンデンサやフィルタ素子［表面にハンダ層を設けたもの］）等を含む、微小な電気素子又は電子素子のことをいう。微小電気・電子素子のサイズは下限が１０μｍ程度のものである。 In the invention of this application, using a torch type electrode provided with a conductive discharge probe (conductive needle), discharge is performed while blowing a working gas, and a micro electric / electronic element is joined on the electrode provided on the substrate. Here, the micro electric / electronic elements typically include, for example, particulate elements such as bump junction electrodes and semiconducting ceramic particles used in the manufacture of semiconductor integrated circuits, etc., and cuboid electronic ceramic devices (ceramic capacitors). Or a filter element [having a solder layer on the surface]) or the like. The lower limit of the size of the micro electric / electronic element is about 10 μm.
トーチ型電極としては、中央に尖った先端が突出した高融点材製の導電性放電プローブが取り付けられるとともにその周囲に配置された作動ガスの吹き付け手段を持つものを用いる。導電性放電プローブとしては、高融点（融点２２００〜３４００℃程度）を有し、高剛性かつ耐熱性を備えている材料で構成されていることが望ましく、たとえばＷ、ＷＣ、ＷＳｉ、ＭｏＳｉ、ＴｉＢ2、ＣｒＢ2等を用いることができる。接合の際、導電性放電プローブは、微小電気・電子素子と接触配置するか又は一定距離だけ離間配置させる。その場合、導電性放電プローブ側を陽極とし、基板上の電極側を陰極とする。 As the torch-type electrode, an electrode to which a conductive discharge probe made of a high melting point material having a pointed tip projecting at the center is attached and which has a working gas spraying means disposed around it is used. The conductive discharge probe is preferably made of a material having a high melting point (melting point of about 2200 to 3400 ° C.) and high rigidity and heat resistance. For example, W, WC, WSi, MoSi, TiB 2 , CrB 2 or the like can be used. At the time of joining, the conductive discharge probe is placed in contact with the minute electric / electronic element or spaced apart by a certain distance. In that case, the conductive discharge probe side is the anode, and the electrode side on the substrate is the cathode.
作動ガスの吹き付け手段は、作動ガスをトーチ型電極の導電性放電プローブの長さ方向に沿って供給し、接合対象となる微小電気・電子素子を作動ガスで包み込むように吹き付けを行う。作動ガスは、接合する部位に吹き付けることにより、接合部位の酸化防止を行う。作動ガスとしては、アルゴン、ヘリウム等の不活性ガスと、Ｈ2、ＣＯ等の還元性ガ
スとの混合ガスを用いることができる。混合ガスを用いる場合には、接合する微小電気・電子素子の表面に生成する酸化物を還元しながらの接合が可能となる。作動ガスの吹き付け手段としては、導電性放電プローブと同軸の１本のパイプ状のものであってもよいし、複数本（たとえば３本や４本等）の吹き付け管を導電性放電プローブの回りに一定間隔で配置したものであってもよい。
The working gas spraying means supplies the working gas along the length direction of the conductive discharge probe of the torch type electrode, and sprays so as to wrap the micro electric / electronic element to be joined with the working gas. The working gas is blown onto the part to be joined to prevent oxidation of the joined part. As the working gas, a mixed gas of an inert gas such as argon or helium and a reducing gas such as H 2 or CO can be used. In the case of using a mixed gas, it is possible to perform bonding while reducing oxides generated on the surfaces of the microelectric / electronic elements to be bonded. The working gas spraying means may be in the form of a single pipe coaxial with the conductive discharge probe, or a plurality of (for example, three or four) spraying tubes around the conductive discharge probe. It may be arranged at regular intervals.
放電を発生させるための電源としては、直流高電圧電源を用いる。直流高電圧電源としては、たとえばコッククロフト・ウォルトン回路を利用したパルス状高電圧発生電源を用いることができる。 A DC high voltage power supply is used as a power supply for generating discharge. As the DC high voltage power source, for example, a pulsed high voltage generating power source using a Cockcroft-Walton circuit can be used.
この場合、パルス状高電圧の波高値、パルス幅及びデューティ比（パルスの休止と供給時の比）を制御することにより、放電のエネルギーの制御が容易となり、接合処理の確度を上げることができる利点がある。その場合の放電条件は、たとえば高電圧（２〜１０ｋＶ程度）、低電流（１〜１００ｍＡ程度）とすることができる。放電時間は、１０秒以下である。 In this case, by controlling the peak value, pulse width, and duty ratio (ratio between pulse pause and supply) of the pulsed high voltage, the discharge energy can be easily controlled, and the accuracy of the bonding process can be increased. There are advantages. The discharge conditions in that case can be, for example, a high voltage (about 2 to 10 kV) and a low current (about 1 to 100 mA). The discharge time is 10 seconds or less.
この出願の発明では、トーチ型電極として、導電性放電プローブの先端で微小電気・電子素子を静電気力あるいは真空吸着力により吸着し、移動及び位置決めができるマニュピレータ機能を有するものを用いることができる。この場合、トーチ型電極をＸ方向、Ｙ方向、Ｚ方向、周方向に移動・傾斜可能な構成（トーチ型電極をステージの保持部材で保持させ、ステージを上記各方向に移動可能にする）としてもよいし、基板を載置するステージ側を上記各方向に移動可能な構成としてもよいし、両者を組み合わせた構成としてもよい。 In the invention of this application, a torch type electrode having a manipulator function capable of adsorbing a minute electric / electronic element at the tip of a conductive discharge probe by electrostatic force or vacuum attracting force, and moving and positioning can be used. In this case, the torch type electrode can be moved and tilted in the X direction, Y direction, Z direction, and circumferential direction (the torch type electrode is held by the holding member of the stage so that the stage can be moved in the above directions). Alternatively, the stage side on which the substrate is placed may be configured to be movable in each of the above directions, or a combination of both.
この出願の発明によれば、トーチ型電極の導電性放電プローブを微小電気・電子素子と接触配置するか又は一定距離だけ離間配置し、作動ガス供給部により作動ガスを供給しながら直流高電圧電源により導電性放電プローブと基板上の電極との間に高電圧を印加して放電を発生させ、その熱エネルギーにより微小電気・電子素子を基板上の電極に接合させる。作動ガス供給部をトーチ型電極に組み込むことにより、導電性放電プローブと対向電極となる配線パターン間で大気圧、高電圧・低電流の放電条件とした細く絞られた放電炎を発生させ、その熱プラズマのエネルギーを利用して接合を行う。放電による熱プラズマは、優に３０００Ｋを超えるが、細く絞られた放電炎は、細く尖った導電性放電プローブと作動ガスの吹き出しにより放電経路がガイドされることにより、適切な接合が可能となる。ここで、直流高電圧電源としてパルス状高電圧を印加できるものを使用することにより、放電電圧の波高値、パルス幅及びデューティ比（パルスの休止と供給時の比）を制御すると、基板を傷めることなく、接合処理が高い確度で行えるようになる。 According to the invention of this application, the direct current high voltage power supply is provided while the conductive discharge probe of the torch type electrode is placed in contact with the minute electric / electronic element or spaced apart by a certain distance and the working gas is supplied by the working gas supply unit. Thus, a high voltage is applied between the conductive discharge probe and the electrode on the substrate to generate a discharge, and the microelectric / electronic element is joined to the electrode on the substrate by the thermal energy. By incorporating the working gas supply unit into the torch-type electrode, a narrowed discharge flame with a discharge condition of atmospheric pressure, high voltage and low current is generated between the conductive discharge probe and the wiring pattern serving as the counter electrode. Bonding is performed using the energy of thermal plasma. Thermal plasma due to discharge is well above 3000K, but a thinly-squeezed discharge flame can be properly joined by guiding the discharge path with a thin, pointed conductive discharge probe and blowing of working gas. . Here, by using a DC high voltage power supply that can apply a pulsed high voltage, controlling the peak value, pulse width, and duty ratio (ratio between pulse pause and supply) of the discharge voltage will damage the substrate. Therefore, the joining process can be performed with high accuracy.
また、トーチ型電極に微小電気・電子素子を個別に吸着、移動、位置決めする等のマニュピレータ機能を持たせると、一括接合処理等で生じた搭載微小電気・電子素子の位置ズレ等を個別に修正していくことが可能となる。この場合、微小電気・電子素子を導電性放電プローブに吸着するには、まず導電性放電プローブを微小電気・電子素子に接触させる。その後、微小電気・電子素子（対象サイズは１０μｍ以上）が４００μｍ以下のサイズの場合、導電性放電プローブに２０〜１００Ｖの電圧を印加して静電気力を生じさせて捕捉する。微小電気・電子素子のサイズが１００μｍ以上の場合、たとえば、導電性放電プローブを作動ガス吹き付け手段内部に格納してからトーチ型電極のノズルを吸い込み口と
して、微小電気・電子素子とノズル間の真空吸着力を用いて行うことができる。
In addition, if a manipulator function such as individually attracting, moving, and positioning micro electric / electronic elements to the torch-type electrode is provided, the misalignment of the mounted micro electric / electronic elements caused by batch bonding processing, etc., can be individually corrected. It becomes possible to do. In this case, in order to attract the minute electric / electronic element to the conductive discharge probe, first, the conductive discharge probe is brought into contact with the minute electric / electronic element. Thereafter, when the micro electrical / electronic element (target size is 10 μm or more) is 400 μm or less, a voltage of 20 to 100 V is applied to the conductive discharge probe to generate and capture the electrostatic force. When the size of the micro electric / electronic element is 100 μm or more, for example, after storing the conductive discharge probe in the working gas spraying means, the nozzle of the torch type electrode is used as a suction port, and the vacuum between the micro electric / electronic element and the nozzle is used. This can be done using the adsorption force.
また、基板全体を加熱することなく接合が行えるので、微小電気・電子素子のふくらみや散りといった悪影響となる現象の発生が防止できる。さらに、微小な接合対象部のみが局所的に高温となるため、特に専用の冷却機構を設けなくとも短時間で冷却され、作業時間が短縮できる。 In addition, since bonding can be performed without heating the entire substrate, it is possible to prevent the occurrence of adverse effects such as swelling or scattering of micro-electric / electronic elements. Furthermore, since only the minute joining target portion is locally heated, it can be cooled in a short time without particularly providing a dedicated cooling mechanism, and the working time can be shortened.
以下、実施例によりこの出願の発明ついてさらに詳しく説明する。もちろん、この出願の発明は上記の実施形態及び以下の例に限定されるものではなく、細部については様々な態様が可能であることは言うまでもない。 Hereinafter, the invention of this application will be described in more detail with reference to examples. Of course, the invention of this application is not limited to the above-described embodiment and the following examples, and it goes without saying that various aspects are possible in detail.
実施例１
図１は、この出願の発明による一実施例の接合方法及び接合装置を模式的に示す図である。トーチ型電極（１）は、Ｗ（タングステン）からなる中央に尖った先端が突出した導電性放電プローブ（２）（先端径２μｍ）を備え、その周囲には作動ガスである不活性ガス（４）（この例では（Ｎ2ガス））の通路（５）及び吹き出し口（６）を有するガス吹
き付け手段（３）が配置されている。ガス吹き付け手段（３）はＳＵＳ３０４鋼により構成されている。ガス吹き付け手段（３）は不活性ガス（４）を供給するための容器（７）に連結されている。
Example 1
FIG. 1 is a diagram schematically showing a joining method and joining apparatus according to an embodiment of the present invention. The torch type electrode (1) is provided with a conductive discharge probe (2) (tip diameter 2 μm) with a pointed tip protruding from the center made of W (tungsten), and an inert gas (4 as a working gas) around it. ) (In this example (N 2 gas)) a gas blowing means (3) having a passage (5) and a blowing port (6) is arranged. The gas blowing means (3) is made of SUS304 steel. The gas blowing means (3) is connected to a container (7) for supplying an inert gas (4).
一方、Ｃｕからなる金属パッド（８）を設けたガラスエポキシ製基板（９）が、図示しないステージ上に載置されている。トーチ型電極（１）の導電性放電プローブ（２）は陽極としてパルス方式の高電圧電源（１０）（マクセレック社製；商品名ＲＨＶ−１０Ｋ１ＰＮ型）に接続されている。また金属パッド（８）は陰極としてパルス方式の高電圧電源（１０）に接続されている。金属パッド（８）には直径８００μｍのチタン酸バリウム（ＢａＴｉＯ3）粒子状素子（１１）を当接させた。 On the other hand, a glass epoxy substrate (9) provided with a metal pad (8) made of Cu is placed on a stage (not shown). The conductive discharge probe (2) of the torch type electrode (1) is connected as an anode to a pulse-type high voltage power source (10) (manufactured by Maxelec; trade name RHV-10K1PN type). The metal pad (8) is connected as a cathode to a pulse type high voltage power supply (10). A barium titanate (BaTiO 3 ) particulate element (11) having a diameter of 800 μm was brought into contact with the metal pad (8).
上記のような構成により粒子状素子（１１）を金属パッド（８）に接合するために、トーチ型電極（１）の導電性放電プローブ（２）の先端を粒子状素子（１１）と５０μｍ以上５００μｍ以下離間させて、パルス方式の高電圧電源（１０）により下記の条件で高電圧を印加して放電を行い、プラズマを発生させた。その際、粒子状素子（１１）と金属パッド（８）あるいは基板（９）で放電による高温の熱を集中させるため及び酸化防止のために作動ガスである不活性ガス（４）をガス吹き付け手段（３）により導電性放電プローブ（２）と同軸に粒子状素子（１１）を包み込むような形に吹き付けた。この吹き付けにより接合対象部が大気からシールドされ、さらに、パルス放電が接合対象部に集中し、酸化被膜のない接合を行うことができた。 In order to join the particulate element (11) to the metal pad (8) with the above configuration, the tip of the conductive discharge probe (2) of the torch type electrode (1) is at least 50 μm from the particulate element (11). Plasma was generated by performing discharge by applying a high voltage under the following conditions with a pulse-type high voltage power supply (10) at a distance of 500 μm or less. At that time, an inert gas (4), which is a working gas, is used for gas concentration in order to concentrate high-temperature heat from the discharge in the particulate element (11) and the metal pad (8) or the substrate (9) and to prevent oxidation. By (3), it sprayed in the shape which wraps the particulate element (11) coaxially with the electroconductive discharge probe (2). By this spraying, the part to be joined was shielded from the atmosphere, and further, pulse discharge was concentrated on the part to be joined, and joining without an oxide film could be performed.
接合条件
電圧：１．８〜２ｋＶ
電流：１０ｍＡ
平均パルス幅：０．２７ｍｓｅｃ．
放電時間：５〜１０秒
実施例２
図２は、電子セラミクスの一種である半導体化セラミクス粒子（１２）表面にハンダ等の低融点導電性微粒子（１３）を島状に被覆した粒子状素子（１１）を金属パッド（８）に接合させる方法を概念的に示す。なお、図２において、図１と同様な要素には同じ符号を付してある。図２の（ａ）はホットプレートまたはリフローにより加熱して接合する従来の接合方法であり、図２の（ｂ）はこの出願の発明による接合方法である。一般にセラミクスは耐熱性が良いので高温から低温まで広い範囲で使用でき、これを半導体化させた
セラミクスはサーミスタ等の抵抗素子やコンデンサ材料として利用できる。この半導体化セラミクス粒子（１２）は表面に電極となる低融点導電性微粒子（１３）を形成することにより低電気抵抗のコンタクト性を備えた実装容易な電子セラミクス素子となる。図２（ａ）の（１４）はホットプレートである。
Joining conditions Voltage: 1.8-2kV
Current: 10mA
Average pulse width: 0.27 msec.
Discharge time: 5-10 seconds Example 2
FIG. 2 shows the bonding of a particulate element (11) having a surface of semiconducting ceramic particles (12), which is a type of electronic ceramics, coated with islands of low melting point conductive fine particles (13) such as solder to metal pads (8). Conceptually shows how to make it happen. In FIG. 2, the same elements as those in FIG. FIG. 2A shows a conventional joining method in which heating is performed by hot plate or reflow, and FIG. 2B shows a joining method according to the invention of this application. In general, ceramics have good heat resistance and can be used in a wide range from high temperature to low temperature. Ceramics made from these can be used as resistance elements such as thermistors and capacitor materials. The semiconducting ceramic particles (12) form a low melting point conductive fine particle (13) serving as an electrode on the surface, thereby forming an electronic ceramic element having low electrical resistance and easy mounting. (14) in FIG. 2 (a) is a hot plate.
図２（ａ）に示した粒子接合方法はホットプレートやリフローによりハンダ等の低融点導電性微粒子（１３）が溶融するまで加熱する必要がある。したがって、加熱・冷却に要する接合時間が長くなり、広い面積を加熱することになる。加熱後の接合界面に酸化被膜が付着し接合性が悪くなり、ハンダは表面張力によりふくらんだり広い範囲に流れ易くなる。将来、高密度実装が進むと、素子はさらに小型化し、従来の接合方法では、接続ピッチも狭くなりピッチ間で短絡することも予想される。 The particle bonding method shown in FIG. 2A needs to be heated until the low melting point conductive fine particles (13) such as solder are melted by hot plate or reflow. Therefore, the bonding time required for heating / cooling is increased, and a large area is heated. An oxide film adheres to the bonded interface after heating, resulting in poor bonding, and the solder tends to swell or flow over a wide range due to surface tension. As high-density mounting progresses in the future, the device will be further miniaturized, and with the conventional bonding method, the connection pitch will be narrowed and short-circuiting between the pitches is expected.
一方、図２（ｂ）で示したこの出願の発明による粒子接合方法では、放電により瞬間的なパルス放電を繰り返し加える。この接合方法では、局所領域を瞬間的に加熱するので、すぐに冷却されるため、半導体化セラミクス（１２）の表面の低融点導電性微粒子（１３）と金属パッド（８）の接触点近傍が酸化被膜を形成することなく溶融・凝固する。さらに、この出願の発明による接合方法では、基板全体を加熱することがないので、ハンダのふくらみや散りといった素子にとって悪影響となる現象は起こらない。 On the other hand, in the particle bonding method according to the invention of this application shown in FIG. 2B, instantaneous pulse discharge is repeatedly applied by discharge. In this bonding method, since the local region is instantaneously heated and thus immediately cooled, the vicinity of the contact point between the low melting point conductive fine particles (13) on the surface of the semiconducting ceramics (12) and the metal pad (8) Melts and solidifies without forming an oxide film. Further, in the bonding method according to the invention of this application, since the entire substrate is not heated, a phenomenon that adversely affects the device such as solder swelling and scattering does not occur.
図３は、電子セラミクス素子の一例として、半導体化チタン酸バリウムの粒子表面に２０μｍ篩下のハンダ粒子を被覆した複合粒子を示す。半導体化チタン酸バリウムはＰＴＣ特性を示すセラミクス材料であり、粒子表面には島状に被覆したハンダが観察される。ハンダは導通を確保するためのコンタクト電極に利用するが、金属パッドの粒子間に配置することにより、図４に示すような温度と抵抗の良好な特性が得られる。 FIG. 3 shows, as an example of an electronic ceramic element, composite particles in which the surface of semiconducting barium titanate particles is coated with solder particles under a 20 μm sieve. Semiconducting barium titanate is a ceramic material exhibiting PTC characteristics, and solder coated in an island shape is observed on the particle surface. Solder is used as a contact electrode for ensuring conduction, but by disposing it between the metal pad particles, good temperature and resistance characteristics as shown in FIG. 4 can be obtained.
図５は、粒子表面をハンダで島状に被覆した直径８００μｍの半導体化チタン酸バリウム粒子とハンダ層を銅表面に被覆した基板を、この出願の発明の接合方法により接合した結果を示す写真である。放電は導電性放電プローブ（２）と粒子状素子（１１）を５０μｍ以上５００μｍ以下離間させてパルス状電圧を印加した。その他の接合条件は実施例１と同様とした。その結果、ハンダとなじみにくい半導体化セラミクス粒子がハンダを介して銅基板と溶融接合し、電気的な導通が得られた。 FIG. 5 is a photograph showing the result of joining the 800 μm-diameter semiconducting barium titanate particles with the surface of the particles coated with solder and the substrate with the solder layer coated on the copper surface by the joining method of the invention of this application. is there. For discharging, a pulsed voltage was applied by separating the conductive discharge probe (2) and the particulate element (11) from 50 μm to 500 μm. Other joining conditions were the same as those in Example 1. As a result, semiconducting ceramic particles that were not easily compatible with solder were melt bonded to the copper substrate via the solder, and electrical conduction was obtained.
図６は、低融点導電性微粒子（１３）であるハンダ粒子で島状に被覆された半導体化セラミクス粒子（１２）と銅基板と間の抵抗値を測定する回路の概略図を示した。抵抗値は金属パッド（８）に接合された粒子状素子（１１）と先端径５００μｍの抵抗測定用金属針（１５）を接触させ、加圧してから抵抗測定用金属針（１５）と金属パッド（８）間の抵抗値を精密抵抗測定器（１６）を用いて測定した。ホットプレート（１４）で加熱して接合した従来法の場合は抵抗値が約５０ＭΩとなった。一方、この出願の発明による接合方法では、粒子状素子（１１）と基板（９）上の金属パッド（８）を放電接合した場合の抵抗値は約３００ｋΩとなり、抵抗値を２桁小さくできることが分かった。 FIG. 6 shows a schematic diagram of a circuit for measuring the resistance value between the semiconductive ceramic particles (12) covered with solder particles, which are the low melting point conductive fine particles (13), in an island shape and the copper substrate. The resistance is measured by bringing the particulate element (11) bonded to the metal pad (8) into contact with the resistance measuring metal needle (15) having a tip diameter of 500 μm and pressurizing it, and then the resistance measuring metal needle (15) and the metal pad. The resistance value between (8) was measured using a precision resistance measuring instrument (16). In the case of the conventional method in which heating was performed with a hot plate (14), the resistance value was about 50 MΩ. On the other hand, in the joining method according to the invention of this application, the resistance value when the particulate element (11) and the metal pad (8) on the substrate (9) are joined by discharge is about 300 kΩ, and the resistance value can be reduced by two orders of magnitude. I understood.
図７は、粒子状素子（１１）を電子回路基板（１７）に表面実装したときの模式図である。基板表面には導通ライン（１８）があらかじめ描画されており、粒子状素子（１１）が配線された導通ライン（１８）の任意の位置に配置すれば、電源（１９）より供給された信号を受けて、抵抗素子やコンデンサ素子を組み込んだ電子回路が完成できる。 FIG. 7 is a schematic view when the particulate element (11) is surface-mounted on the electronic circuit board (17). A conduction line (18) is drawn in advance on the surface of the substrate. If the conductive line (18) is arranged at an arbitrary position on which the particulate element (11) is wired, a signal supplied from the power source (19) is supplied. In response, an electronic circuit incorporating a resistance element and a capacitor element can be completed.
１ トーチ型電極
２ 導電性放電プローブ
３ ガス吹き付け手段
４ 不活性ガス
５ 不活性ガスの通路
６ 吹き出し口
７ 不活性ガス用容器
８ 金属パッド
９ 基板
１０ 高電圧電源
１１ 粒子状素子
１２ 半導体化セラミクス粒子
１３ 低融点導電性微粒子
１４ ホットプレート
１５ 抵抗測定用金属針
１６ 精密抵抗測定器
１７ 電子回路基板
１８ 導通ライン
１９ 電源
DESCRIPTION OF SYMBOLS 1 Torch type electrode 2 Conductive discharge probe 3 Gas spraying means 4 Inert gas 5 Passage of inert gas 6 Outlet 7 Inert gas container 8 Metal pad 9 Substrate 10 High voltage power supply 11 Particulate element 12 Semiconductor ceramic particle 13 Low melting point conductive fine particles 14 Hot plate 15 Metal needle for resistance measurement 16 Precision resistance measuring instrument 17 Electronic circuit board 18 Conducting line 19 Power supply
Claims (10)
中央に尖った先端が突出した高融点材製の導電性放電プローブが取り付けられるとともにその周囲に配置された作動ガスの吹き付け手段を持つトーチ型電極と、
導電性放電プローブと基板上に設けられた電極との間に高電圧を印加する直流高電圧電源と、
微小電気・電子素子を包み込むように導電性放電プローブの長さ方向に沿って作動ガスを供給する作動ガス供給部を備え、
導電性放電プローブを微小電気・電子素子と接触配置するか又は一定距離だけ離間配置し、作動ガス供給部により作動ガスを供給しながら直流高電圧電源により導電性放電プローブと基板上の電極との間に高電圧を印加して放電を発生させ、その熱エネルギーにより微小電気・電子素子を基板上の電極に接合させることを特徴とする微小電気・電子素子の接合装置。 An apparatus for joining a micro electric / electronic element with an electrode provided on a substrate,
A torch type electrode having a working gas spraying means disposed around the conductive discharge probe made of a high melting point material with a sharp tip protruding in the center, and
A direct-current high-voltage power supply that applies a high voltage between the conductive discharge probe and an electrode provided on the substrate;
Provided with a working gas supply unit that feeds a working gas along the length direction of the conductive discharge probe so as to wrap the micro electrical / electronic element,
The conductive discharge probe is placed in contact with the micro electric / electronic element or spaced apart by a fixed distance, and the working gas supply unit supplies the working gas to the conductive high-voltage power supply between the conductive discharge probe and the electrode on the substrate. A device for joining micro-electrical / electronic elements, wherein a high voltage is applied between them to generate a discharge, and the micro-electrical / electronic element is joined to an electrode on a substrate by the thermal energy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005161070A JP4714831B2 (en) | 2005-06-01 | 2005-06-01 | Method and apparatus for joining micro electrical / electronic elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005161070A JP4714831B2 (en) | 2005-06-01 | 2005-06-01 | Method and apparatus for joining micro electrical / electronic elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006339334A true JP2006339334A (en) | 2006-12-14 |
| JP4714831B2 JP4714831B2 (en) | 2011-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005161070A Expired - Fee Related JP4714831B2 (en) | 2005-06-01 | 2005-06-01 | Method and apparatus for joining micro electrical / electronic elements |
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| Country | Link |
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| JP (1) | JP4714831B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100795772B1 (en) * | 2007-02-28 | 2008-01-17 | 주식회사 고려반도체시스템 | Method of preventing melted metallic compound from having oxidized film thereon during bump formation process and apparatus therefor |
| JP2009297738A (en) * | 2008-06-12 | 2009-12-24 | Taiyo Nippon Sanso Corp | Shielding gas for arc brazing and arc brazing method using the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10261865A (en) * | 1997-03-19 | 1998-09-29 | Toshiba Corp | Mounting method of electric part |
| JP2000133670A (en) * | 1998-10-28 | 2000-05-12 | Internatl Business Mach Corp <Ibm> | Bump, its forming method, and its manufacturing equipment |
| JP2001205441A (en) * | 2000-01-18 | 2001-07-31 | Ramu Technologies:Kk | Arc welding method and torch for arc welding |
-
2005
- 2005-06-01 JP JP2005161070A patent/JP4714831B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10261865A (en) * | 1997-03-19 | 1998-09-29 | Toshiba Corp | Mounting method of electric part |
| JP2000133670A (en) * | 1998-10-28 | 2000-05-12 | Internatl Business Mach Corp <Ibm> | Bump, its forming method, and its manufacturing equipment |
| JP2001205441A (en) * | 2000-01-18 | 2001-07-31 | Ramu Technologies:Kk | Arc welding method and torch for arc welding |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100795772B1 (en) * | 2007-02-28 | 2008-01-17 | 주식회사 고려반도체시스템 | Method of preventing melted metallic compound from having oxidized film thereon during bump formation process and apparatus therefor |
| JP2009297738A (en) * | 2008-06-12 | 2009-12-24 | Taiyo Nippon Sanso Corp | Shielding gas for arc brazing and arc brazing method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4714831B2 (en) | 2011-06-29 |
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