JP2006299294A - Gas feeding device, and film deposition system - Google Patents

Gas feeding device, and film deposition system Download PDF

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JP2006299294A
JP2006299294A JP2005118237A JP2005118237A JP2006299294A JP 2006299294 A JP2006299294 A JP 2006299294A JP 2005118237 A JP2005118237 A JP 2005118237A JP 2005118237 A JP2005118237 A JP 2005118237A JP 2006299294 A JP2006299294 A JP 2006299294A
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gas
gas supply
base member
supply path
inner pipe
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Takashi Kakegawa
崇 掛川
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • General Physics & Mathematics (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To securely perform the sealing between a feed path, through which a first gas flows, and a space, through which a second gas flows, in a gas shower head (gas feeding device) used for a CVD (chemical vapor deposition) system or the like. <P>SOLUTION: The central part, for example, of a base member equivalent to the upper side part in a gas shower head is connected with a gas feed pipe as an upper feed path for a first gas, so as to open the lower end thereof to the lower part side of the base member, and the eccentric position of the base member is connected with a second gas feed path opening to the diffusion space of the gas. Then, the upper part side of the lower feed path for the first gas formed at the central part of the shower plate equivalent to the lower side part of the gas shower head is provided with an inner pipe as a passage for the first gas. The inner pipe is inserted into the gas feed pipe as the upper feed path for the first gas, and a ring-shaped seal member made of resin is interposed between the inner pipe and the upper feed path for the first gas. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、例えば基板に対して成膜処理を行うために、基板に対向する多数のガス供給孔から複数種類のガスを別々に処理容器内に供給するガス供給装置、及びこのガス供給装置を用いた成膜装置に関する。   The present invention provides, for example, a gas supply device that separately supplies a plurality of types of gases into a processing container from a large number of gas supply holes facing the substrate in order to perform a film forming process on the substrate, and the gas supply device. The present invention relates to the film forming apparatus used.

半導体製造プロセスの一つに成膜処理があり、このプロセスは通常真空雰囲気下で処理ガスを例えばプラズマ化あるいは熱分解することで活性化し、基板表面上に活性種あるいは反応生成物を堆積させることにより行われる。そして成膜処理の中には、複数種類のガスを反応させて成膜するプロセスがあり、このプロセスとしては、Ｔｉ、Ｃｕ、Ｔａなどの金属、またはＴｉＮ、ＴｉＳｉ、ＷＳｉなどの金属化合物、あるいはＳｉＮ、ＳｉＯ2などの絶縁膜といった薄膜の形成を挙げることができる。   One of the semiconductor manufacturing processes is a film forming process, and this process is usually activated by, for example, plasmaizing or thermally decomposing a processing gas in a vacuum atmosphere to deposit active species or reaction products on the substrate surface. Is done. In the film formation process, there is a process of forming a film by reacting a plurality of types of gases. As this process, a metal such as Ti, Cu, or Ta, a metal compound such as TiN, TiSi, or WSi, or The formation of a thin film such as an insulating film such as SiN or SiO 2 can be mentioned.

このような成膜処理を行うための装置は、真空チャンバをなす処理容器内に基板を載置するための載置台が配置されると共に処理容器の上部に前記載置台と対向するように一般にガスシャワーヘッドと呼ばれているガス供給装置が設けられ、更に処理容器内のガスにエネルギーを与えるための手段である加熱装置やプラズマ発生手段などが組み合わせて設けられている。ここでガスシャワーヘッドから複数種類のガスを処理容器内に供給する手法として、複数のガスを共通のガス供給路から処理容器内に供給するとガスシャワーヘッド内にて反応生成物が生じる場合があることから、ＣＶＤ（chemical vapor deposition）成膜装置に用いられるガスシャワーヘッドは、一般に第１のガスと第２のガスとを別々のガス供給孔から噴出して処理容器内に供給する構造のものが使用されている。   An apparatus for performing such a film forming process is generally a gas so that a mounting table for mounting a substrate is disposed in a processing container forming a vacuum chamber, and the mounting table is opposed to the above-described mounting table. A gas supply device called a shower head is provided, and a heating device or a plasma generating device, which is a device for applying energy to the gas in the processing vessel, is also provided in combination. Here, as a method of supplying a plurality of types of gases from the gas shower head into the processing container, reaction products may be generated in the gas shower head when a plurality of gases are supplied into the processing container from a common gas supply path. Therefore, a gas shower head used in a CVD (chemical vapor deposition) film forming apparatus generally has a structure in which a first gas and a second gas are ejected from separate gas supply holes and supplied into a processing vessel. Is used.

図７は、特許文献１に記載されたガスシャワーヘッドの構造を示す図であり、このガスシャワーヘッドは、処理容器の上部の開口部を塞ぐベース部材１１と、このベース部材１１の下部側に設けられたシャワープレート１２と、を備えている。ベース部材１１の中央部には第１のガス用の上部供給路１３が形成され、この上部供給路１３の上側は管路部１４に連通している。ベース部材１１における前記上部供給路１３の出口を囲む領域は凹部１５として形成される一方、シャワープレート１２の中央部には、第１のガス用の下部供給路１６が管状に突出してその上端部がフランジ１７として形成され、このフランジ１７が凹部１５に収まった状態で上部供給路１３と下部供給路１６とが連通している。即ちシャワープレート１２は、周縁部にてベース部材１１にネジ止めされることでフランジ１７が凹部１５の水平面に押しつけられ、そしてフランジ１７とベース部材１１との間にリング状のメタルガスケット（図の便宜上ハッチングを省略して白抜きとして記載してある）１８を介在させることで、第１のガス用の供給路１３、１６と、ベース部材１１及びシャワープレート１２の間のガス拡散空間１９との間を気密にシールしている。   FIG. 7 is a view showing the structure of the gas shower head described in Patent Document 1, and this gas shower head has a base member 11 that closes the opening at the top of the processing container, and a lower side of the base member 11. And a provided shower plate 12. An upper supply path 13 for the first gas is formed at the center of the base member 11, and the upper side of the upper supply path 13 communicates with the pipe line section 14. A region surrounding the outlet of the upper supply path 13 in the base member 11 is formed as a recess 15, while a lower gas supply path 16 for the first gas projects in a tubular shape at the center of the shower plate 12 and has an upper end portion thereof. Is formed as a flange 17, and the upper supply path 13 and the lower supply path 16 communicate with each other in a state where the flange 17 is accommodated in the recess 15. That is, the shower plate 12 is screwed to the base member 11 at the peripheral portion, whereby the flange 17 is pressed against the horizontal surface of the concave portion 15, and a ring-shaped metal gasket (shown in the figure) is interposed between the flange 17 and the base member 11. By interposing 18) (hatching is omitted for the sake of convenience), the first gas supply paths 13 and 16 and the gas diffusion space 19 between the base member 11 and the shower plate 12 are provided. The space is hermetically sealed.

またベース部材１１における偏心位置には、前記ガス拡散空間１９に開口するように第２のガス供給路１０が接続されている。またシャワープレート１２は、第１のガス用の下部供給路１６に供給されたガスが、互いに連通する空間１ａを介して下面に開口する第１のガス供給孔１ｂから下方側に噴出すると共に、第２のガス供給路１０からガス拡散空間１９に流出したガスが第２のガス供給孔１ｃから下方側に噴出するように構成される。ベース部材１１における凹部１５においてメタルガスケット１８を用いている理由については、処理容器内にてプラズマを発生させてＣＶＤ処理を行う場合あるいは熱ＣＶＤを行う場合には、処理雰囲気の温度が高く、このため当該部分の温度も例えば３００〜４００℃程度になることから、樹脂製のリング状のシール材であるいわゆるＯリングを用いることができず、このためメタルガスケット１８を用いて第１のガス用の供給路１３、１６と第２のガスが拡散するガス拡散空間１９との間を気密にシールして第１のガスと第２のガスとが混じり合わないようにしているのである。   A second gas supply path 10 is connected to the eccentric position of the base member 11 so as to open to the gas diffusion space 19. In addition, the shower plate 12 jets the gas supplied to the lower supply path 16 for the first gas downward from the first gas supply hole 1b opened on the lower surface through the space 1a communicating with each other. The gas flowing out from the second gas supply path 10 into the gas diffusion space 19 is configured to be ejected downward from the second gas supply hole 1c. The reason why the metal gasket 18 is used in the concave portion 15 in the base member 11 is that the temperature of the processing atmosphere is high when plasma is generated in the processing container to perform CVD processing or when thermal CVD is performed. Therefore, since the temperature of the part is also about 300 to 400 ° C., for example, a so-called O-ring that is a resin ring-shaped sealing material cannot be used. For this reason, the metal gasket 18 is used for the first gas. The gas supply space 13 and the gas diffusion space 19 in which the second gas diffuses are hermetically sealed so that the first gas and the second gas are not mixed.

ところでシャワープレート１２とベース部材１１との固定位置は周縁部にあるが、シール位置は中央部にあることから両者が離れており、このため加熱状態あるいはヒートサイクルなどによってメタルガスケット１８、フランジ１７あるいはベース部材１１の中央部分などに歪みが生じ、この結果シール部に隙間が生じてしまい、第１のガス用の供給路１３、１６内のガスが微少ではあるがガス拡散空間１９にリークすることがある。なお隙間をなくすためには、シール部近傍にてネジ固定を行うことが有効であるが、例えばＴｉ（チタン）成膜プロセスなどのようにプラズマＣＶＤを行う場合には、シャワープレート１２の下面側は異常放電の防止のために平坦性の高い面にしなければならず、このため処理空間側にネジを設けることはできないし、また上側からネジ止めすることは、大気雰囲気と真空雰囲気とを連通させることになるので、やはり採用できない。   By the way, although the fixing position of the shower plate 12 and the base member 11 is in the peripheral portion, the sealing position is in the central portion, so that they are separated from each other, so that the metal gasket 18, flange 17 or The central portion of the base member 11 is distorted, resulting in a gap in the seal portion, and the gas in the first gas supply passages 13 and 16 leaks into the gas diffusion space 19 even though it is very small. There is. In order to eliminate the gap, it is effective to fix the screw in the vicinity of the seal portion. However, when plasma CVD is performed as in a Ti (titanium) film forming process, for example, the lower surface side of the shower plate 12 is used. In order to prevent abnormal discharge, the surface must have a high flatness. Therefore, it is impossible to install screws on the processing space side, and screwing from the upper side connects the atmosphere and vacuum atmosphere. It will not be able to be adopted after all.

このように第１のガスがガス拡散空間１９にリークすると、次のような問題が起こる。例えばＴｉの成膜プロセスは、ＴｉＣｌ4（四塩化チタン）ガス及びＡｒガスを第１のガス用のガス供給路１３，１６から供給し、またＨ2（水素）ガスを第２のガス供給路１０から供給しているが、処理容器内の被処理基板にＴｉ膜を成膜した後にＴｉ膜の表面部を窒化することがあり、その場合第２のガス供給路１０にＮＨ3（アンモニア）ガスを流すようにしている。このとき先のプロセスガスであるＴｉＣｌ4ガスがリークによりガス拡散空間１９に漂っていると、ＮＨ3ガスとの反応によりＮＨ4Ｃｌ（塩化アンモニウム）が生成して処理雰囲気内に流入し、基板のパーティクル汚染の要因になってしまう。   When the first gas leaks into the gas diffusion space 19 as described above, the following problem occurs. For example, in the Ti film forming process, TiCl 4 (titanium tetrachloride) gas and Ar gas are supplied from the gas supply paths 13 and 16 for the first gas, and H 2 (hydrogen) gas is supplied from the second gas supply path 10. Although it is supplied, the surface of the Ti film may be nitrided after the Ti film is formed on the substrate to be processed in the processing container. In this case, NH 3 (ammonia) gas is allowed to flow through the second gas supply path 10. I am doing so. At this time, if TiCl4 gas, which is the previous process gas, drifts in the gas diffusion space 19 due to leakage, NH4Cl (ammonium chloride) is generated by the reaction with NH3 gas and flows into the processing atmosphere, causing particle contamination of the substrate. It becomes a factor.

また他のプロセスにおいて、熱ＣＶＤを行う場合には、ガスシャワーヘッド内で第１のガスと第２のガスとがリークにより接触すると反応生成物が生じてしまい、やはりパーティクル汚染を引き起こしてしまう。   In another process, when thermal CVD is performed, a reaction product is generated when the first gas and the second gas come into contact with each other in the gas showerhead due to leakage, which also causes particle contamination.

特開２００２−３２７２７４号公報：図３JP 2002-327274 A: FIG.

本発明はこのような事情の下になされたものであり、その目的は下面側に多数のガス供給孔を備え、互いに異なる第１のガスと第２のガスとを別々のガス供給孔から供給するにあたって、第１のガスが流れる供給路と第２のガスが流れる空間との間のシールを確実に行うことができるガス供給装置を提供することにある。また本発明の他の目的は、このガス供給装置を用いてパーティクル汚染を低減することのできる成膜装置を提供することにある。   The present invention has been made under such circumstances, and an object thereof is to provide a large number of gas supply holes on the lower surface side, and supply different first gas and second gas from different gas supply holes. In doing so, an object of the present invention is to provide a gas supply device capable of reliably performing a seal between a supply path through which a first gas flows and a space through which a second gas flows. Another object of the present invention is to provide a film forming apparatus capable of reducing particle contamination using this gas supply apparatus.

本発明は、処理容器の上部に設けられたベース部材と、このベース部材の下部側にガスの拡散空間をなす隙間を介して気密に取り付けられ、第１のガス用の供給路を備えたシャワープレートと、を備え、
前記シャワープレートは、下部側に多数のガス供給孔が開口されると共に、ベース部材側から前記第１のガス用の供給路に供給された第１のガスと前記ガスの拡散空間に供給された第２のガスとが互いに異なるガス供給孔から噴出するように構成されたガス供給装置において、
前記ベース部材に上下方向に伸びるように設けられ、その下部側が当該ベース部材の下部側に開口している第１のガス用の上部供給路と、
前記ベース部材に設けられ、前記ガスの拡散空間に開口する第２のガス供給路と、
前記第１のガス用の上部供給路内に挿入され、第１のガスの通路をなすインナーパイプと、
このインナーパイプの外周面と前記第１のガス用の上部供給路の内周面との間を気密にシールするためのシール部材と、
前記シャワープレートに設けられ、前記インナーパイプの下部側と気密に接続された第１のガス用の下部供給路と、を備えたことを特徴とする。 The present invention provides a base member provided at an upper portion of a processing container and a shower provided with a first gas supply path, which is hermetically attached to a lower side of the base member via a gap forming a gas diffusion space. A plate, and
The shower plate has a large number of gas supply holes opened on the lower side, and is supplied from the base member side to the first gas supplied to the first gas supply path and the gas diffusion space. In the gas supply apparatus configured to eject from the gas supply hole different from the second gas,
An upper supply path for a first gas that is provided on the base member so as to extend in the vertical direction, and whose lower side is open on the lower side of the base member;
A second gas supply path provided in the base member and opening into the gas diffusion space;
An inner pipe inserted into the upper gas supply passage for the first gas and forming a passage for the first gas;
A seal member for hermetically sealing between the outer peripheral surface of the inner pipe and the inner peripheral surface of the upper supply path for the first gas;
A first gas lower supply path provided on the shower plate and hermetically connected to the lower side of the inner pipe.

なお本発明において「上部」、「下部」などの上、下を特定する用語は、記載の便宜上使用しているのであって、ガス供給装置が仮に処理容器の側面部に設けられている場合であっても、本発明の構成要件と実質同一であれば（処理容器の向きを変えれば本発明の構成要件を備えることになるのであれば）、本発明の権利範囲に属するものである。   In the present invention, the terms for specifying “upper” and “lower” such as “upper” and “lower” are used for convenience of description, and the case where the gas supply device is temporarily provided on the side surface of the processing vessel. Even if it is substantially the same as the constituent requirements of the present invention (if the orientation of the processing container is changed, the constituent requirements of the present invention are provided), it belongs to the scope of the right of the present invention.

本発明では、インナーパイプの下端部とシャワープレート側の第１のガス用の下部供給路との間は、例えばメタルガスケットによりシールされる。またインナーパイプの下端部はフランジとして構成され、当該フランジとシャワープレート側の第１のガス用の下部供給路の上端部とは、ベース部材とシャワープレートとの間に収まるネジにより互いに固定されている構成であってもよい。更にインナーパイプの外周面と前記第１のガス供給路の内周面との間を気密にシールするためのシール部材は、樹脂製のシール部材であることが好ましい。
また本発明は、前記シャワープレート側の第１のガス用の下部供給路とインナーパイプとは、気密に接続される代わりに一体化していてもよい。 In the present invention, the gap between the lower end portion of the inner pipe and the lower gas supply passage for the first gas on the shower plate side is sealed by, for example, a metal gasket. The lower end portion of the inner pipe is configured as a flange, and the flange and the upper end portion of the first gas lower supply path on the shower plate side are fixed to each other by screws that fit between the base member and the shower plate. It may be a configuration. Furthermore, it is preferable that the seal member for hermetically sealing between the outer peripheral surface of the inner pipe and the inner peripheral surface of the first gas supply path is a resin seal member.
In the present invention, the first gas lower supply path on the shower plate side and the inner pipe may be integrated instead of being hermetically connected.

更に他の発明は、気密な処理容器と、この処理容器内に設けられ、基板を載置するための載置台と、処理容器内のガスを排気する排気手段と、請求項１ないし５のいずれか一つに記載のガス供給装置と、を備え、ガス供給装置から供給される第１のガスと第２のガスとを処理容器内で反応させてその反応生成物を載置台上の基板に堆積させて成膜することを特徴とする成膜装置である。   Still another invention is an airtight processing container, a mounting table provided in the processing container for mounting a substrate, an exhaust means for exhausting gas in the processing container, and any one of claims 1 to 5. A gas supply device according to claim 1, wherein the first gas and the second gas supplied from the gas supply device are reacted in a processing container, and the reaction product is applied to a substrate on the mounting table. A film forming apparatus is characterized by depositing a film.

本発明によれば、ガスシャワーヘッドの上側部分であるベース部材に第１のガス用の上部供給路と第２のガス供給路とを設け、シャワープレート側の第１のガス用の下部供給路に連通するインナーパイプをベース部材の下方側から第１のガス用の上部供給路内に挿入し、当該上部供給路の内周面とインナーパイプの外周面との間をシールするようにしているため、シール部位を処理空間から離れた低温部位に位置させることができる。従ってシール部材及びその周辺部位の変形や劣化が抑えられるので、第１のガス用の供給路と第２のガスが拡散するガス拡散領域との間を長期に亘って確実にシールすることができる。そしてシール部位を低温部位に位置させることができることから、シール部材として樹脂製のリング状のシール部材を用いることができ、この場合容易に組み立てを行うことができ、またより一層確実なシール状態を維持することができる。こうして確実なシール構造が達成できることにより、ガスシャワーヘッド内における第１のガスと第２のガスとの接触が防止でき、それらガスの反応生成物が生じるおそれがなく、パーティクル発生の低減化に寄与する。   According to the present invention, the base member that is the upper portion of the gas shower head is provided with the first gas upper supply path and the second gas supply path, and the first gas lower supply path on the shower plate side. An inner pipe that communicates with the inner gas is inserted into the first gas upper supply path from the lower side of the base member to seal between the inner peripheral surface of the upper supply path and the outer peripheral surface of the inner pipe. Therefore, the seal part can be located at a low temperature part away from the processing space. Accordingly, deformation and deterioration of the seal member and its peripheral portion can be suppressed, and therefore, the gap between the first gas supply path and the gas diffusion region where the second gas diffuses can be reliably sealed over a long period of time. . And since a seal | sticker site | part can be located in a low-temperature site | part, a resin-made ring-shaped seal member can be used as a seal member, In this case, an assembly can be performed easily and a more reliable seal state is obtained. Can be maintained. Since a reliable sealing structure can be achieved in this way, contact between the first gas and the second gas in the gas shower head can be prevented, and there is no possibility that reaction products of these gases will be generated, contributing to reduction in particle generation. To do.

本発明のガス供給装置をプラズマＣＶＤにより成膜を行うための成膜装置に組み込んだ実施の形態について説明する。この成膜装置は、上側が大径の円筒部２ａでその下側に小径の円筒部２ｂが連設されたいわばキノコ形状の処理容器２を備え、この処理容器２は例えばアルミニウムからなる真空チャンバとして構成され、その内壁を加熱するための図示しない加熱機構が設けられている。処理容器２内には、基板である例えば半導体ウエハ（以下ウエハという）Ｗを水平に載置するための基板載置台をなすステージ２１が設けられ、このステージ２１は、小径部２ｂの底部に支持部材２２を介して支持されている。   An embodiment in which the gas supply apparatus of the present invention is incorporated in a film forming apparatus for forming a film by plasma CVD will be described. This film forming apparatus includes a so-called mushroom-shaped processing vessel 2 in which a cylindrical portion 2a having a large diameter on the upper side and a cylindrical portion 2b having a small diameter on the lower side thereof are connected. The processing vessel 2 is a vacuum chamber made of aluminum, for example. And a heating mechanism (not shown) for heating the inner wall is provided. In the processing container 2, a stage 21 is provided as a substrate mounting table for horizontally mounting, for example, a semiconductor wafer (hereinafter referred to as a wafer) W, which is a substrate, and this stage 21 is supported on the bottom of the small diameter portion 2b. It is supported via the member 22.

ステージ２１内にはウエハＷの温調手段をなす図示しないヒータ及びウエハＷを静電吸着するための図示しない静電チャックが設けられている。更にステージ２１には、ウエハＷを保持して昇降させるための例えば３本の支持ピン２３がステージ２１の表面に対して突没自在に設けられ、この支持ピン２３は、支持部材２４を介して処理容器２の外の昇降機構２５に接続されている。処理容器２の底部には排気管２６の一端側が接続され、この排気管２６の他端側には真空排気手段である真空ポンプ２７が接続されている。また処理容器２の大径部２ａの側壁には、ゲートバルブ２８により開閉される搬送口２９が形成されている。   In the stage 21, a heater (not shown) that forms a temperature adjusting means for the wafer W and an electrostatic chuck (not shown) for electrostatically adsorbing the wafer W are provided. Further, the stage 21 is provided with, for example, three support pins 23 for holding and lifting the wafer W so as to be able to protrude and retract with respect to the surface of the stage 21. It is connected to an elevating mechanism 25 outside the processing container 2. One end of an exhaust pipe 26 is connected to the bottom of the processing container 2, and a vacuum pump 27, which is a vacuum exhaust means, is connected to the other end of the exhaust pipe 26. A transfer port 29 that is opened and closed by a gate valve 28 is formed on the side wall of the large diameter portion 2 a of the processing container 2.

更に処理容器２の天井部には開口部３１が形成され、この開口部３１を塞ぐようにかつステージ２１に対向するように本発明のガス供給装置であるガスシャワーヘッド４が設けられている。ここでガスシャワーヘッド４及びステージ２１は夫々上部電極及び下部電極を兼用しており、ガスシャワーヘッド４は整合器３２を介して高周波電源部３３に接続されると共に、下部電極であるステージ２１は接地されている。なお図１では配線図は略解的に記載してあるが、実際にはステージ２１は処理容器２に電気的に接続され、処理容器２の上部から図示しないマッチングボックスを介して接地され、高周波の導電路が処理空間を包み込むようになっている。   Furthermore, an opening 31 is formed in the ceiling of the processing container 2, and a gas shower head 4 that is a gas supply device of the present invention is provided so as to close the opening 31 and face the stage 21. Here, the gas shower head 4 and the stage 21 also serve as an upper electrode and a lower electrode, respectively. The gas shower head 4 is connected to the high-frequency power supply unit 33 through the matching unit 32, and the stage 21 serving as the lower electrode is Grounded. In FIG. 1, the wiring diagram is shown in a simplified manner. Actually, however, the stage 21 is electrically connected to the processing container 2 and grounded from above the processing container 2 through a matching box (not shown). A conductive path surrounds the processing space.

ガスシャワーヘッド４は、図２に示すように大きく分けると上部分であるベース部材５と下部分であるシャワープレート６とからなる。ベース部材５は円形状のプレート５１の周縁部が起立し、その起立縁５２の上端にはフランジ５２ａが形成されている。処理容器２の前記開口部３１の内周縁部には、上部電極であるガスシャワーヘッド４と処理容器２とを絶縁するための絶縁部材３４が設けられ、ベース部材５のフランジ５２ａは図示しないネジにより前記絶縁部材３４に固定されている。即ちベース部材５は、前記開口部３１を塞ぐように設けられている。なおベース部材５の上方側には図１に示すように断熱部材４０が設けられている。   As shown in FIG. 2, the gas shower head 4 is roughly composed of a base member 5 as an upper portion and a shower plate 6 as a lower portion. The base member 5 has a peripheral edge of a circular plate 51 erected, and a flange 52 a is formed at the upper end of the erected edge 52. An insulating member 34 is provided at the inner peripheral edge of the opening 31 of the processing vessel 2 to insulate the gas shower head 4 as the upper electrode and the processing vessel 2. A flange 52 a of the base member 5 is a screw (not shown). Thus, the insulating member 34 is fixed. That is, the base member 5 is provided so as to close the opening 31. A heat insulating member 40 is provided above the base member 5 as shown in FIG.

ベース部材５の前記プレート５１は複数の部材を組み立てて構成され、ベース部材５の中央部（詳しくはプレート５１の中央部）の詳細構造は図３に示してある。ベース部材５の中央部には、下面側に円形状の凹部５２が形成され、またこの凹部５２にその下端が開口すると共に上方に伸びる第１のガス供給管５３が設けられている。この第１のガス供給管５３の上端部は図１に示すようにガス流路ブロック１００及びガス供給路１０１を介して例えばＴｉＣｌ4ガス源１０２及びＡｒガス源１０３に接続されている。
またベース部材５における凹部５２よりも少し外側位置（偏心位置）には、第２のガス供給路をなす第２のガス供給管５４が上方に伸びるように接続され、この第２のガス供給管５４の下端部には、例えば放射状にガスがベース部材５の下方側の空間５０（後述のガス拡散空間）に流出するように複数の吐出口５５を備えた吐出ポート５６が嵌合されている。第２のガス供給管５４の上端部は図１に示すようにガス流路ブロック１００及びガス供給路１０４を介して例えばＨ2ガス源１０５及びＮＨ3ガス源１０６に接続されている。なお鎖線で囲んだ１０７で示す部分は、各ガス供給路に設けられたバルブやマスフローコントローラなどのガス供給機器の群である。 The plate 51 of the base member 5 is constructed by assembling a plurality of members, and the detailed structure of the central portion of the base member 5 (specifically, the central portion of the plate 51) is shown in FIG. In the central portion of the base member 5, a circular recess 52 is formed on the lower surface side, and a first gas supply pipe 53 is provided in the recess 52. The lower end of the recess 52 opens and extends upward. The upper end portion of the first gas supply pipe 53 is connected to, for example, a TiCl4 gas source 102 and an Ar gas source 103 via a gas flow path block 100 and a gas supply path 101 as shown in FIG.
Further, a second gas supply pipe 54 constituting a second gas supply path is connected to a position slightly outside the eccentricity 52 in the base member 5 so as to extend upward, and this second gas supply pipe At the lower end of 54, for example, a discharge port 56 having a plurality of discharge ports 55 is fitted so that gas flows radially into a space 50 (a gas diffusion space described below) below the base member 5. . The upper end of the second gas supply pipe 54 is connected to, for example, an H2 gas source 105 and an NH3 gas source 106 via a gas flow path block 100 and a gas supply path 104 as shown in FIG. In addition, the part shown by 107 enclosed with the chain line is a group of gas supply apparatuses, such as a valve provided in each gas supply path, and a mass flow controller.

一方ガスシャワーヘッド４の下部分であるシャワープレート６は、周縁部が起立してその起立縁の上端にフランジ６１が形成されており、このフランジ６１がベース部材５におけるプレート５１の下面にネジ５１ａにより気密に接合して固定されている。従ってシャワープレート６は、ベース部材５の下方側に第２のガス（第２のガス供給管５４から吐出されるガス）の拡散空間５０に相当する隙間を介して気密に取り付けられた状態になっている。   On the other hand, the shower plate 6, which is the lower part of the gas shower head 4, has a peripheral edge standing and a flange 61 is formed at the upper end of the rising edge. Is airtightly joined and fixed. Therefore, the shower plate 6 is airtightly attached to the lower side of the base member 5 through a gap corresponding to the diffusion space 50 of the second gas (gas discharged from the second gas supply pipe 54). ing.

シャワープレート６の中央部には図３及び図４に示すように、第１のガスの導入ポート６２が上方に突出し、その上端はベース部材５の既述の凹部５２の口径よりも少し小さいフランジ６３として形成されている。そしてこの第１のガスの導入ポート６２には、第１のガスの通路をなす管状体であるインナーパイプ７が接合されている。より詳しくは、インナーパイプ７の下端にはフランジ７１が形成され、このフランジ７１の中央寄りは肉厚が大きい円形段部７２として構成されている。そしてインナーパイプ７側のフランジ７１と第１のガス導入ポート６２側のフランジ６３とは、ネジ６０が上側から挿入されて固定されると共に、インナーパイプ７側の円形段部７２の下面側にはメタルガスケット７３が収まっていてこのメタルガスケット７３を介してフランジ７１（詳しくは円形段部７２の下面）とフランジ６３とが気密にシールされた構造になっている。図４中７１ａ及び６３ａはネジ孔である。   As shown in FIGS. 3 and 4, a first gas introduction port 62 protrudes upward at the center of the shower plate 6, and its upper end is a flange that is slightly smaller than the diameter of the recess 52 described above of the base member 5. 63 is formed. The inner pipe 7, which is a tubular body that forms a passage for the first gas, is joined to the first gas introduction port 62. More specifically, a flange 71 is formed at the lower end of the inner pipe 7, and the center of the flange 71 is configured as a circular step 72 having a large thickness. The flange 71 on the inner pipe 7 side and the flange 63 on the first gas introduction port 62 side are fixed by inserting a screw 60 from above, and on the lower surface side of the circular step portion 72 on the inner pipe 7 side. The metal gasket 73 is accommodated, and the flange 71 (specifically, the lower surface of the circular stepped portion 72) and the flange 63 are hermetically sealed through the metal gasket 73. In FIG. 4, 71a and 63a are screw holes.

インナーパイプ７はベース部材５の第１のガス供給管５３内に挿入されており、インナーパイプ７の上端付近には全周に亘って溝（図４参照）７４が形成されている。そしてＯリングと呼ばれる樹脂製のシール部材７５が前記溝７４に嵌合され、このＯリング７５により第１のガス供給管５３の内周面とインナーパイプ７の外周面との間が気密にシールされることになる。なおＯリング７５によりシールされる部位とシャワープレート６の下面との高さ方向の距離は例えば１３０ｍｍ程度である。
この例においては、ベース部材５側のガス供給管５３とシャワープレート６側のガス導入ポートとは、夫々本発明でいう第１のガス用の上部ガス供給路及び第１のガス用の下部ガス供給路に相当する。 The inner pipe 7 is inserted into the first gas supply pipe 53 of the base member 5, and a groove (see FIG. 4) 74 is formed around the entire upper end of the inner pipe 7. A resin sealing member 75 called an O-ring is fitted into the groove 74, and the O-ring 75 provides an airtight seal between the inner peripheral surface of the first gas supply pipe 53 and the outer peripheral surface of the inner pipe 7. Will be. The distance in the height direction between the portion sealed by the O-ring 75 and the lower surface of the shower plate 6 is, for example, about 130 mm.
In this example, the gas supply pipe 53 on the base member 5 side and the gas introduction port on the shower plate 6 side are respectively the upper gas supply path for the first gas and the lower gas for the first gas in the present invention. Corresponds to the supply path.

シャワープレート６は、下面側つまり処理容器２内の処理空間側と前記拡散空間５０とを連通するように厚さ方向に穿設された第２のガス供給孔８０と、第１のガスの導入ポート６２の下端部と連通し、第２のガス供給孔８０の上部側の部分を形成する細い筒状部８２を囲む空間８１と、この空間８１と前記処理空間側とを連通するように厚さ方向に穿設された第１のガス供給孔９１とを備えている。より詳しくは、シャワープレート６は、上下２段のプレート８及び９からなり、上段プレート８は、図２のＡ−Ａラインに沿った図５（上段プレート８の底面図）に示すように、全面に亘って多数の細い突起部（先の筒状部）８２がマトリックス状に形成されており、この突起部８２内に第２のガス供給孔８０の上部側に相当する孔が穿設されている。またこの例ではシャワープレート６における突起部８２の間の空間（先の空間８１に相当）には第１のガスの導入ポート６２の下端部から「Ｈ」状に配管されたガス吐出管８３が設けられており、第１のガスは「Ｈ」状配管の先端付近に設けられた穴（計４ヶ所）から上側に向かって吹き出され、空間８１に分散して処理空間内に均一に供給されるようになっている。   The shower plate 6 has a second gas supply hole 80 formed in the thickness direction so as to communicate the lower surface side, that is, the processing space side in the processing container 2 and the diffusion space 50, and the introduction of the first gas. A space 81 that surrounds the thin cylindrical portion 82 that communicates with the lower end portion of the port 62 and forms a portion on the upper side of the second gas supply hole 80, and a thickness that communicates between the space 81 and the processing space side. And a first gas supply hole 91 formed in the vertical direction. More specifically, the shower plate 6 is composed of upper and lower two-stage plates 8 and 9, and the upper plate 8 is as shown in FIG. 5 (bottom view of the upper plate 8) along the line AA in FIG. A large number of thin protrusions (the previous cylindrical portions) 82 are formed in a matrix shape over the entire surface, and holes corresponding to the upper side of the second gas supply holes 80 are formed in the protrusions 82. ing. In this example, a gas discharge pipe 83 piped in an “H” shape from the lower end of the first gas introduction port 62 is formed in the space between the protrusions 82 of the shower plate 6 (corresponding to the previous space 81). The first gas is blown upward from holes (four locations in total) provided near the tip of the “H” -shaped pipe, dispersed in the space 81, and uniformly supplied into the processing space. It has become so.

一方下段プレート９は、上段プレート８の突起部８２の孔に対応する位置に第２のガス供給孔８０の下部側に相当する孔が穿設されると共に、第２のガス供給孔８０の間の位置に、第１のガス供給孔９１が穿設されている。即ち、上段プレート８と下段プレート９とを接合することにより形成される空間８１に第１のガス供給孔９１が連通し、これら空間８１及び第１のガス供給孔９１とは気密に隔離された状態で第２のガス供給孔８０が形成されることになる。言い換えれば、このガスシャワーヘッド４は、各々マトリックス状に第１のガス供給孔９１と第２のガス供給孔８０とが下面側に開口されるように配列され、第１のガスの導入ポート６２から吐出される第１のガスとガス拡散空間５０に流入した第２のガスとが互いに異なるガス供給孔から供給される構造となっている。   On the other hand, the lower plate 9 is provided with a hole corresponding to the lower side of the second gas supply hole 80 at a position corresponding to the hole of the protrusion 82 of the upper plate 8, and between the second gas supply holes 80. The first gas supply hole 91 is formed at the position. That is, the first gas supply hole 91 communicates with a space 81 formed by joining the upper plate 8 and the lower plate 9, and the space 81 and the first gas supply hole 91 are isolated from each other in an airtight manner. In this state, the second gas supply hole 80 is formed. In other words, the gas shower head 4 is arranged in a matrix so that the first gas supply holes 91 and the second gas supply holes 80 are opened on the lower surface side, and the first gas introduction port 62 is provided. The first gas discharged from the gas and the second gas flowing into the gas diffusion space 50 are supplied from different gas supply holes.

次ぎに上述の実施の形態の作用について述べる。先ず図１に示すように基板であるウエハＷが図示しない搬送アームにより搬送口２９を介して処理容器２内に搬入され、支持ピン２３との協働作用によりステージ２１上に受け渡される。そしてガス供給源１０２、１０３から第１のガスであるＴｉＣｌ4ガス及びＡｒガスの混合ガスが夫々第１のガス供給管５３に送られ、これら第１のガスがインナーパイプ７及び第１のガスの導入ポート６２を経由してガスシャワーヘッド４のシャワープレート６内の空間８１に拡散し、第１のガス供給孔９１から処理容器２内の処理空間に吐出される。またガス供給源１０５から第２のガスであるＨ2ガスが第２のガス供給管５４に送られ、この第２のガスが吐出ポート５６から拡散空間５０に吐出されて拡散し、第２のガス供給孔８０から処理空間に吐出する。   Next, the operation of the above embodiment will be described. First, as shown in FIG. 1, a wafer W, which is a substrate, is loaded into the processing container 2 through a transfer port 29 by a transfer arm (not shown), and is transferred onto the stage 21 by the cooperative action with the support pins 23. Then, a mixed gas of TiCl4 gas and Ar gas, which is the first gas, is sent from the gas supply sources 102 and 103 to the first gas supply pipe 53, respectively, and these first gases are sent to the inner pipe 7 and the first gas. It diffuses into the space 81 in the shower plate 6 of the gas shower head 4 via the introduction port 62 and is discharged from the first gas supply hole 91 to the processing space in the processing container 2. Further, H 2 gas which is the second gas is sent from the gas supply source 105 to the second gas supply pipe 54, and the second gas is discharged from the discharge port 56 into the diffusion space 50 and diffused, and the second gas. Discharge from the supply hole 80 into the processing space.

一方真空ポンプ２７内により処理容器２内を真空排気し、排気管２６に設けられた図示しない圧力調整バルブを調整して処理容器２内の圧力を設定圧力にすると共に、高周波電源部３３から上部電極であるガスシャワーヘッド４と下部電極であるステージ２１との間に高周波電力を供給して、処理ガスつまり第１のガス及び第２のガスをプラズマ化し、ＴｉＣｌ4をＨ2により還元してウエハＷ上にＴｉを堆積して薄膜を形成し、反応副生成物であるＨＣｌは未反応ガスとともに排気される。   On the other hand, the inside of the processing container 2 is evacuated by the vacuum pump 27 and a pressure adjusting valve (not shown) provided in the exhaust pipe 26 is adjusted to set the pressure in the processing container 2 to a set pressure, and from the high frequency power supply unit 33 to the upper part. A high frequency power is supplied between the gas shower head 4 as the electrode and the stage 21 as the lower electrode, the processing gas, that is, the first gas and the second gas are converted into plasma, and TiCl4 is reduced with H2 to reduce the wafer W. Ti is deposited thereon to form a thin film, and the reaction by-product HCl is exhausted together with unreacted gas.

続いて第１のガスの供給を停止し、第２のガスとしてＨ2ガスからＮＨ3（アンモニア）ガスに切り替え、これによりＮＨ3ガスが第２のガス供給管５４、吐出ポート５６を介してガス拡散空間５０に吐出されて拡散し、第２のガス供給孔８０から処理空間に吐出する。このときにおいても高周波電力が処理空間に供給され、ウエハＷ上に既に形成されているＴｉ薄膜の表面がＮＨ3の活性種により窒化される。窒化終了後、高周波電力の供給とＮＨ3ガスの供給とを停止し、その後ウエハＷを既述の搬入動作と逆の動作で処理容器２から搬出する。   Subsequently, the supply of the first gas is stopped, and the second gas is switched from H2 gas to NH3 (ammonia) gas, so that the NH3 gas passes through the second gas supply pipe 54 and the discharge port 56 to form a gas diffusion space. 50 is discharged and diffused, and is discharged from the second gas supply hole 80 into the processing space. Also at this time, high-frequency power is supplied to the processing space, and the surface of the Ti thin film already formed on the wafer W is nitrided by NH3 active species. After the nitridation is completed, the supply of high frequency power and the supply of NH3 gas are stopped, and then the wafer W is unloaded from the processing container 2 by an operation reverse to the above-described loading operation.

上述の実施の形態によれば、ガスシャワーヘッド４の下側部分であるシャワープレート６の中央部から上に向けて突出する第１のガス用の下部供給路に相当する第１のガスの導入ポート６２にインナーパイプ７を気密に接続し、ベース部材５の下方側から第１のガス用の上部供給路に相当する第１のガス供給管５３内にインナーパイプ７を挿入し、インナーパイプ７の上部において第１のガス供給管５３の内周面とインナーパイプ７の間を樹脂材のシール部材であるＯリング７５により気密にシールしているため、容易にかつ確実に両者を気密にシールすることができる。そしてこのシール部位は処理空間から離れた例えば１７０℃程度の低温部位に位置しているので、Ｏリング７５が劣化するおそれがないし、またその周辺部位が加熱やヒートサイクルにより変形するといった不具合も起こらないことから、長期に亘って確実にシールされる。   According to the above-described embodiment, the introduction of the first gas corresponding to the first gas lower supply path protruding upward from the central portion of the shower plate 6 which is the lower portion of the gas shower head 4. The inner pipe 7 is hermetically connected to the port 62, and the inner pipe 7 is inserted into the first gas supply pipe 53 corresponding to the upper supply path for the first gas from the lower side of the base member 5. Since the space between the inner peripheral surface of the first gas supply pipe 53 and the inner pipe 7 is hermetically sealed by an O-ring 75 which is a sealing member made of a resin material, the both are easily and surely hermetically sealed. can do. And since this seal | sticker site | part is located in the low temperature site | part of about 170 degreeC away from processing space, there is no possibility that O-ring 75 may deteriorate, and the malfunction that the peripheral site | part deform | transforms by a heating or a heat cycle also arises. Since it does not exist, it seals reliably over a long period of time.

また第１のガスの導入ポート６２とインナーパイプ７との接続部分において熱ストレスにより歪みが生じたとしても、シール部位の近傍にネジ６０による固定部位が位置しているため、隙間を生じるおそれがなく、この接続部分から第１のガスがガス拡散空間５０にリークする懸念がない。以上のことから、第１のガス供給管５３内に供給される第１のガスが第２のガスの通流空間であるガス拡散空間５０にリークするおそれがなく、このためＴｉ膜の窒化処理を行うために第２のガス供給管５４からガス拡散空間５０にＮＨ3ガスを流しても、当該空間５０にはＴｉＣｌ4が存在しないことから、これらガスが反応して反応生成物（ＮＨ4Ｃｌ）が発生するおそれがない。従って処理空間に固形の反応生成物が飛散することが低減されるので、ウエハＷに対するパーティクル汚染が抑えられる。   Further, even if distortion occurs due to thermal stress in the connection portion between the first gas introduction port 62 and the inner pipe 7, a fixing portion by the screw 60 is located in the vicinity of the sealing portion, so that a gap may be generated. In addition, there is no concern that the first gas leaks into the gas diffusion space 50 from this connection portion. From the above, there is no possibility that the first gas supplied into the first gas supply pipe 53 will leak into the gas diffusion space 50 which is the second gas flow space, and therefore the nitriding treatment of the Ti film. Even if NH3 gas is allowed to flow from the second gas supply pipe 54 to the gas diffusion space 50 to perform the above, since TiCl4 does not exist in the space 50, these gases react to generate a reaction product (NH4Cl). There is no fear. Accordingly, the scattering of solid reaction products in the processing space is reduced, so that particle contamination on the wafer W can be suppressed.

上述の実施の形態のようにシャワープレート６中央部の第１のガスの導入ポート６２とインナーパイプ７とを分離できるようにすれば、組み立て、分解作業が容易に行えるのでメンテナンスが行いやすいが、本発明では、これらが一体化されていてもよい。図６はこのような実施の形態を示し、シャワープレート６の中央部の上側からインナーパイプ７が伸びだしており、このインナーパイプ７の下端側は、シャワープレート６の中央部に形成されかつ空間８１に連通する第１のガス用の下部供給路７０に連通していることになる。このような実施の形態であっても、第１のガス供給管５３内に供給される第１のガスが第２のガスの通流空間であるガス拡散空間５０にリークするおそれがない。   If the first gas introduction port 62 and the inner pipe 7 at the center of the shower plate 6 can be separated as in the above-described embodiment, the assembly and disassembly work can be easily performed, so maintenance is easy. In the present invention, these may be integrated. FIG. 6 shows such an embodiment, in which an inner pipe 7 extends from the upper side of the central portion of the shower plate 6, and the lower end side of the inner pipe 7 is formed in the central portion of the shower plate 6 and is a space. In other words, the first gas lower communication path 70 communicates with the first gas. Even in such an embodiment, there is no possibility that the first gas supplied into the first gas supply pipe 53 leaks into the gas diffusion space 50 which is the flow space for the second gas.

本発明は、Ｔｉの成膜、続く窒化処理に限らず、モノシランガスなどのシラン系のガス及びアンモニアガスを処理容器内に別々に供給して窒化シリコン膜を形成する場合などにも適用してもよいことは勿論であり、この場合にはガスシャワーヘッド内にてガスがリークすると固体成分であるＮＨ4Ｃｌが内部で形成されてしまうことから、本発明は有効である。また成膜装置としては、プラズマＣＶＤ装置に限らず熱ＣＶＤ装置などにも適用することができる。   The present invention is not limited to Ti film formation and subsequent nitriding treatment, but may be applied to a case where a silicon nitride film such as monosilane gas and ammonia gas are separately supplied into a processing vessel to form a silicon nitride film. Needless to say, in this case, if the gas leaks in the gas shower head, NH4Cl, which is a solid component, is formed inside, so the present invention is effective. Further, the film forming apparatus is not limited to the plasma CVD apparatus and can be applied to a thermal CVD apparatus or the like.

本発明の実施の形態に係るガス供給装置を組み込んだＣＶＤ装置を示す縦断側面図である。It is a vertical side view which shows the CVD apparatus incorporating the gas supply apparatus which concerns on embodiment of this invention. 上記の実施の形態に係るガス供給装置を示す縦断面図である。It is a longitudinal cross-sectional view which shows the gas supply apparatus which concerns on said embodiment. 上記の実施の形態に係るガス供給装置の要部を示す縦断面図である。It is a longitudinal cross-sectional view which shows the principal part of the gas supply apparatus which concerns on said embodiment. 上記の実施の形態に係るガス供給装置の要部の分解斜視図を示す縦断面図である。It is a longitudinal cross-sectional view which shows the disassembled perspective view of the principal part of the gas supply apparatus which concerns on said embodiment. 上記の実施の形態に係るガス供給装置のシャワープレートの上部材を示す底面図である。It is a bottom view which shows the upper member of the shower plate of the gas supply apparatus which concerns on said embodiment. 本発明の他の実施の形態に係るガス供給装置の要部を示す縦断面図である。It is a longitudinal cross-sectional view which shows the principal part of the gas supply apparatus which concerns on other embodiment of this invention. 従来のガス供給装置示す縦断面図である。It is a longitudinal cross-sectional view which shows the conventional gas supply apparatus.

符号の説明Explanation of symbols

２ 処理容器
２１ ステージ（基板載置台）
３１ 開口部
３４ 絶縁部材
４ ガスシャワーヘッド（ガス供給装置）
５ ベース部材
５０ ガスの拡散空間
５３ 第１のガス供給管
５４ 第２のガス供給管
６ シャワープレート
６２ 第１のガス導入ポート
７ インナーパイプ
７３ メタルガスケット
７５ Ｏリング
８０ 第２のガス供給孔
８１ 空間
９１ 第１のガス供給孔


2 Processing container 21 stage (substrate mounting table)
31 Opening 34 Insulating member 4 Gas shower head (gas supply device)
5 Base member 50 Gas diffusion space 53 First gas supply pipe 54 Second gas supply pipe 6 Shower plate 62 First gas introduction port 7 Inner pipe 73 Metal gasket 75 O-ring 80 Second gas supply hole 81 Space 91 1st gas supply hole


Claims (6)

処理容器の上部に設けられたベース部材と、このベース部材の下部側にガスの拡散空間をなす隙間を介して気密に取り付けられ、第１のガス用の供給路を備えたシャワープレートと、を備え、
前記シャワープレートは、下部側に多数のガス供給孔が開口されると共に、ベース部材側から前記第１のガス用の供給路に供給された第１のガスと前記ガスの拡散空間に供給された第２のガスとが互いに異なるガス供給孔から噴出するように構成されたガス供給装置において、
前記ベース部材に上下方向に伸びるように設けられ、その下部側が当該ベース部材の下部側に開口している第１のガス用の上部供給路と、
前記ベース部材に設けられ、前記ガスの拡散空間に開口する第２のガス供給路と、
前記第１のガス用の上部供給路内に挿入され、第１のガスの通路をなすインナーパイプと、
このインナーパイプの外周面と前記第１のガス用の上部供給路の内周面との間を気密にシールするためのシール部材と、
前記シャワープレートに設けられ、前記インナーパイプの下部側と気密に接続された第１のガス用の下部供給路と、を備えたことを特徴とするガス供給装置。 A base member provided at an upper portion of the processing container, and a shower plate that is hermetically attached to a lower side of the base member through a gap that forms a gas diffusion space, and includes a first gas supply path. Prepared,
The shower plate has a large number of gas supply holes opened on the lower side, and is supplied from the base member side to the first gas supplied to the first gas supply path and the gas diffusion space. In the gas supply apparatus configured to eject from the gas supply hole different from the second gas,
An upper supply path for a first gas that is provided on the base member so as to extend in the vertical direction, and whose lower side is open on the lower side of the base member;
A second gas supply path provided in the base member and opening into the gas diffusion space;
An inner pipe inserted into the upper gas supply passage for the first gas and forming a passage for the first gas;
A seal member for hermetically sealing between the outer peripheral surface of the inner pipe and the inner peripheral surface of the upper supply path for the first gas;
A gas supply device, comprising: a first gas lower supply path provided on the shower plate and hermetically connected to a lower side of the inner pipe. インナーパイプの下端部とシャワープレート側の第１のガス用の上部供給路との間は、メタルガスケットによりシールされることを特徴とする請求項１記載のガス供給装置。   The gas supply device according to claim 1, wherein a gap between a lower end portion of the inner pipe and an upper supply path for the first gas on the shower plate side is sealed with a metal gasket. インナーパイプの下端部はフランジとして構成され、当該フランジとシャワープレート側の第１のガス用の上部供給路の上端部とは、ベース部材とシャワープレートとの間に収まるネジにより互いに固定されていることを特徴とする請求項１または２記載のガス供給装置。   The lower end portion of the inner pipe is configured as a flange, and the flange and the upper end portion of the first gas upper supply path on the shower plate side are fixed to each other by a screw that fits between the base member and the shower plate. The gas supply device according to claim 1, wherein the gas supply device is a gas supply device. インナーパイプの外周面と前記第１のガス供給路の内周面との間を気密にシールするためのシール部材は、樹脂製のシール部材であることを特徴とする請求項１ないし３のいずれか一つに記載のガス供給装置。   The seal member for sealing airtightly between the outer peripheral surface of the inner pipe and the inner peripheral surface of the first gas supply path is a resin seal member. The gas supply apparatus as described in any one. 前記シャワープレート側の第１のガス用の下部供給路とインナーパイプとは、気密に接続される代わりに一体化していることを特徴とする請求項１ないし４のいずれか一つに記載のガス供給装置。   5. The gas according to claim 1, wherein the first gas lower supply path on the shower plate side and the inner pipe are integrated instead of being hermetically connected. Feeding device. 気密な処理容器と、この処理容器内に設けられ、基板を載置するための載置台と、処理容器内のガスを排気する排気手段と、請求項１ないし５のいずれか一つに記載のガス供給装置と、を備え、ガス供給装置から供給される第１のガスと第２のガスとを処理容器内で反応させてその反応生成物を載置台上の基板に堆積させて成膜することを特徴とする成膜装置。


6. An airtight processing container, a mounting table provided in the processing container for mounting a substrate, an exhaust means for exhausting a gas in the processing container, and any one of claims 1 to 5. A gas supply device, and the first gas and the second gas supplied from the gas supply device are reacted in a processing container, and the reaction product is deposited on the substrate on the mounting table to form a film. A film forming apparatus.


JP2005118237A 2005-04-15 2005-04-15 Gas feeding device, and film deposition system Pending JP2006299294A (en)

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Cited By (9)

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