JP2006282417A - Metal/ceramic joined substrate - Google Patents

Metal/ceramic joined substrate Download PDF

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JP2006282417A
JP2006282417A JP2005101293A JP2005101293A JP2006282417A JP 2006282417 A JP2006282417 A JP 2006282417A JP 2005101293 A JP2005101293 A JP 2005101293A JP 2005101293 A JP2005101293 A JP 2005101293A JP 2006282417 A JP2006282417 A JP 2006282417A
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metal
heat sink
ceramic
metal plate
substrate
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JP4915011B2 (en
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Akira Sugawara
章 菅原
Akio Sawabe
明朗 沢辺
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Dowa Holdings Co Ltd
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Dowa Mining Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal/ceramic joined substrate which can effectively prevent the generation of cracks in a solder or a ceramic substrate even when a Pb-free solder is used in the case that a heat dissipating plate is fixed on the metal/ceramic joined substrate. <P>SOLUTION: In the metal/ceramic joined substrate wherein a metal plate 18 for fixing a heat dissipating plate 22 is joined on one surface of the ceramic substrate 10 through a solder 16, a metal plate of copper or a copper alloy having a Vickers hardness of 40-60 is used as the metal plate 18 for fixing the heat dissipating plate. The heat dissipating plate 22 is fixed on the other surface of the metal plate 18 for fixing the heat dissipating plate by a Pb-free solder 20. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、金属−セラミックス接合基板に関し、特に、セラミックス基板に金属板が接合した金属−セラミックス接合基板に関する。   The present invention relates to a metal / ceramic bonding substrate, and more particularly to a metal / ceramic bonding substrate in which a metal plate is bonded to a ceramic substrate.

従来、電気自動車、電車、工作機械などの大電流を制御するために、パワーモジュールが使用されている。一般に、パワーモジュールでは、セラミックス基板の両面に銅板やアルミニウム板などの金属板が接合した金属−セラミックス接合基板が使用されている。この金属−セラミックス接合基板の一方の面には、銅板やアルミニウム板などの金属板、ＡｌＳｉＣなどの熱伝導に優れたセラミックス板、またはＣｕ−Ｍｏ板を銅でクラッドした複合板などからなる放熱板（ベース板）が半田付けにより固定されており、他方の面には、半田付けなどにより半導体チップが固定されている。   Conventionally, a power module is used to control a large current of an electric vehicle, a train, a machine tool, and the like. In general, a power module uses a metal-ceramic bonding substrate in which a metal plate such as a copper plate or an aluminum plate is bonded to both surfaces of a ceramic substrate. On one surface of the metal-ceramic bonding substrate, a heat radiating plate made of a metal plate such as a copper plate or an aluminum plate, a ceramic plate excellent in heat conduction such as AlSiC, or a composite plate in which a Cu-Mo plate is clad with copper, etc. A (base plate) is fixed by soldering, and a semiconductor chip is fixed to the other surface by soldering or the like.

近年、環境汚染の防止の観点から、従来のＰｂ入り半田（鉛を含む半田）の代わりにＰｂフリー半田（実質的に鉛を含まない半田）が使用され始めており、金属−セラミックス接合基板においても半導体チップを固定するためにＰｂフリー半田が使用され始めている。   In recent years, Pb-free solder (substantially lead-free solder) has begun to be used in place of conventional Pb-containing solder (solder containing lead) from the viewpoint of preventing environmental pollution. Pb-free solder has begun to be used for fixing semiconductor chips.

しかし、ベース板（放熱板）のように大きな板材を固定するためにＰｂフリー半田を使用すると、酸化や汚れなどの半田濡れを少しでも阻害する要因があると半田接合部にボイドが生じ易く、あるいは半田付け条件の適正範囲が狭いために少しでもその範囲がばらつくと半田接合部にボイドが生じ易く、半田接合部にボイドが生じないように固定することが困難であった。半田接合部にこのようなボイドが生じると、半導体チップの作動時の発熱や周囲の温度変化などの熱の影響によって、それぞれの構成要素の熱膨張差による応力が生じ、金属−セラミックス接合基板のセラミックス基板や半田などの最も弱いところにクラックが生じるという問題がある。そのため、従来では、Ｐｂフリー半田でベース板（放熱板）を固定することが行われていなかった。これは、Ｐｂフリー半田は、Ｐｂ入り半田よりも凝固後の硬さが硬く、クリープし難いので、半田の塑性変形によって半田付けやヒートサイクルなどの熱応力を緩和することができず、セラミックス基板や半田に大きな応力が生じてクラックに至ると考えられる。   However, if Pb-free solder is used to fix a large plate material such as a base plate (heat sink), voids are likely to occur in the solder joints if there is a factor that hinders solder wetting such as oxidation and dirt. Alternatively, since the appropriate range of soldering conditions is narrow, if the range varies even a little, voids are likely to occur in the solder joints, and it is difficult to fix the solder joints so that no voids are generated. When such voids occur in the solder joint, stress due to the difference in thermal expansion of each component occurs due to the heat generated during operation of the semiconductor chip and the ambient temperature change, and the metal-ceramic bonding substrate There is a problem that a crack is generated in the weakest part such as a ceramic substrate or solder. Therefore, conventionally, fixing the base plate (heat radiating plate) with Pb-free solder has not been performed. This is because Pb-free solder is harder to solidify and harder to creep than Pb-containing solder, so it cannot relax thermal stress such as soldering and heat cycle due to plastic deformation of the solder. It is considered that a large stress is generated in the solder and leads to a crack.

一方、セラミックス基板に金属板が接合した金属−セラミックス接合基板において、回路用金属板の一部がセラミックス基板に接合しないようにすることにより、セラミックス基板のクラックを防止することができることが提案されている（例えば、特許文献１〜３参照）。   On the other hand, in a metal-ceramic bonding substrate in which a metal plate is bonded to a ceramic substrate, it has been proposed that cracking of the ceramic substrate can be prevented by preventing a part of the circuit metal plate from being bonded to the ceramic substrate. (For example, refer to Patent Documents 1 to 3).

特開平７−９４６２３号公報（段落番号００１０−００１２）Japanese Patent Laid-Open No. 7-94623 (paragraph numbers 0010-0012) 特開平９−１５７０５５号公報（段落番号０００７−００１４）Japanese Laid-Open Patent Publication No. 9-157055 (paragraph numbers 0007-0014) 特開２００３−３１８３３０号公報（段落番号００１９−００２４）JP 2003-318330 A (paragraph numbers 0019-0024)

しかし、特許文献１〜３に提案された金属−セラミックス接合基板では、Ｐｂ入り半田を使用してベース板（放熱板）を固定した場合には、熱衝撃時のセラミックス基板のクラックの発生を防止することができるが、Ｐｂフリー半田を使用してベース板（放熱板）を固定した場合には、ヒートサイクル後の半田のクラックの発生を防止することができなかった。そのため、金属−セラミックス接合基板の裏面に固定する銅やアルミニウムなどからなる金属ベース板を厚くしたり、みかけの熱膨張係数を増大したり、半田との熱膨張差を小さくすることを試みたが、これらの試みでは、熱衝撃時のセラミックス基板への応力が増大して、今度はセラミックス基板にクラックが発生するという問題が生じた。このように、特許文献１〜３に提案された金属−セラミックス接合基板にＰｂフリー半田を使用してベース板（放熱板）を固定すると、ヒートサイクル試験などの信頼性試験において、半田やセラミックス基板にクラックが発生するのを効果的に防止することができなかった。   However, in the metal-ceramic bonding substrates proposed in Patent Documents 1 to 3, when the base plate (heat radiating plate) is fixed using Pb-containing solder, the generation of cracks in the ceramic substrate during thermal shock is prevented. However, when the base plate (heat radiating plate) was fixed using Pb-free solder, it was not possible to prevent the occurrence of solder cracks after the heat cycle. Therefore, we tried to thicken the metal base plate made of copper, aluminum, etc. fixed to the back surface of the metal-ceramic bonding substrate, increase the apparent thermal expansion coefficient, or reduce the thermal expansion difference with the solder. In these attempts, the stress on the ceramic substrate at the time of thermal shock increased, and this time, there was a problem that cracks occurred in the ceramic substrate. As described above, when the base plate (heat radiating plate) is fixed to the metal-ceramic bonding substrate proposed in Patent Documents 1 to 3 using Pb-free solder, the solder or ceramic substrate is used in a reliability test such as a heat cycle test. It was not possible to effectively prevent cracks from occurring.

したがって、本発明は、このような従来の問題点に鑑み、金属−セラミックス接合基板に放熱板を固定する場合にＰｂフリー半田を使用しても、半田やセラミックス基板にクラックが発生するのを効果的に防止することができる、金属−セラミックス接合基板を提供することを目的とする。   Therefore, in view of such a conventional problem, the present invention is effective in generating cracks in a solder or a ceramic substrate even when Pb-free solder is used when fixing a heat sink to a metal / ceramic bonding substrate. It is an object of the present invention to provide a metal / ceramic bonding substrate which can be prevented automatically.

本発明者らは、上記課題を解決するために鋭意研究した結果、セラミックス基板の一方の面に放熱板固定用金属板の一方の面が接合した金属−セラミックス接合基板において、放熱板固定用金属板としてビッカース硬さ４０〜６０の金属板を使用することによって、金属−セラミックス接合基板に放熱板を固定する場合にＰｂフリー半田を使用しても、半田やセラミックスにクラックが発生するのを効果的に防止することができることを見出し、本発明を完成するに至った。   As a result of diligent research to solve the above problems, the present inventors have found that a metal for fixing a heat sink is a metal-ceramic bonding substrate in which one surface of a heat sink fixing metal plate is bonded to one surface of a ceramic substrate. By using a metal plate with a Vickers hardness of 40-60 as the plate, cracks are generated in the solder and ceramics even if Pb-free solder is used when fixing the heat sink to the metal / ceramic bonding substrate. As a result, the present invention has been completed.

すなわち、本発明による金属−セラミックス接合基板は、セラミックス基板の一方の面に放熱板固定用金属板の一方の面が接合した金属−セラミックス接合基板において、放熱板固定用金属板のビッカース硬さが４０〜６０であることを特徴とする。この金属−セラミックス接合基板において、放熱板固定用金属板が銅または銅合金からなり、放熱板固定用金属板の結晶粒径が０．２ｍｍ以下であり、放熱板固定用金属板の厚さが０．０５ｍｍ以上であるのが好ましい。   That is, the metal-ceramic bonding substrate according to the present invention is a metal-ceramic bonding substrate in which one surface of the heat sink fixing metal plate is bonded to one surface of the ceramic substrate, and the heat sink fixing metal plate has a Vickers hardness. 40-60. In this metal / ceramic bonding substrate, the heat sink fixing metal plate is made of copper or a copper alloy, the heat sink fixing metal plate has a crystal grain size of 0.2 mm or less, and the heat sink fixing metal plate has a thickness of It is preferable that it is 0.05 mm or more.

上記の金属−セラミックス接合基板において、セラミックス基板の一方の面にろう材を介して放熱板固定用金属板の一方の面を接合し、この熱板固定用金属板の他方の面に、この放熱板固定用金属板より大きい平面形状の放熱板を半田によって固定することができる。この半田は、実質的に鉛を含まない半田でもよい。また、半田の露出面が放熱板固定用金属板の一方の面の周縁から放熱板の周縁部付近に向かって傾斜しているのが好ましく、半田の露出面と放熱板の固定面との間の角度が３０〜７０°であるのが好ましい。   In the metal-ceramic bonding substrate, one surface of the heat sink fixing metal plate is bonded to one surface of the ceramic substrate via a brazing material, and the heat dissipation is applied to the other surface of the heat plate fixing metal plate. A planar heat sink larger than the plate-fixing metal plate can be fixed with solder. This solder may be a solder that does not substantially contain lead. The exposed surface of the solder is preferably inclined from the periphery of one surface of the heat sink fixing metal plate toward the vicinity of the periphery of the heat sink, and between the exposed surface of the solder and the heat sink fixing surface. Is preferably 30 to 70 °.

上記の金属−セラミックス接合基板において、セラミックス基板の一方の面に放熱板固定用金属板の一方の面を接合するために塗布されるろう材の形状を、互いに離間した複数の線状または点状にすることにより、セラミックス基板の一方の面と放熱板固定用金属板の一方の面との間に非接合部が設けられているのが好ましい。あるいは、放熱板固定用金属板の一方の面の周縁部または周縁部付近に所定の幅の非接合部を設けてもよい。この場合、放熱板固定用金属板の一方の面の周縁の全周に沿って延びているのが好ましい。また、非接合部が、放熱板固定用金属板の一方の面の周縁から所定の距離だけ離間してもよい。この場合、所定の距離が０．１ｍｍ以上であるのが好ましい。また、所定の幅が０．１ｍｍ以上であるのが好ましく、０．２５〜３．０ｍｍであるのがさらに好ましい。   In the above metal-ceramic bonding substrate, the shape of the brazing material applied to bond one surface of the heat sink fixing metal plate to one surface of the ceramic substrate may be a plurality of lines or dots spaced from each other. By doing so, it is preferable that a non-joining portion is provided between one surface of the ceramic substrate and one surface of the heat sink fixing metal plate. Or you may provide the non-joining part of predetermined width in the peripheral part of the one surface of a heat sink fixing metal plate, or peripheral part vicinity. In this case, it is preferable that it extends along the entire periphery of the peripheral edge of one surface of the heat sink fixing metal plate. Further, the non-joining portion may be separated from the peripheral edge of one surface of the heat sink fixing metal plate by a predetermined distance. In this case, the predetermined distance is preferably 0.1 mm or more. The predetermined width is preferably 0.1 mm or more, and more preferably 0.25 to 3.0 mm.

上記の金属−セラミックス接合基板において、セラミックス基板が窒化アルミニウム基板または窒化珪素基板であるのが好ましく、セラミックス基板の厚さが０．０５〜１．５ｍｍであるのが好ましい。さらに、セラミックス基板の他方の面にろう材を介して回路用金属板が接合され、このろう材が金属板の周縁から０．０３ｍｍ以上はみ出ているのが好ましい。   In the metal-ceramic bonding substrate, the ceramic substrate is preferably an aluminum nitride substrate or a silicon nitride substrate, and the thickness of the ceramic substrate is preferably 0.05 to 1.5 mm. Furthermore, it is preferable that a circuit metal plate is joined to the other surface of the ceramic substrate via a brazing material, and this brazing material protrudes 0.03 mm or more from the periphery of the metal plate.

また、本発明による半導体回路基板またはパワーモジュールは、上記の金属−セラミックス接合基板を用いたことを特徴とする。   A semiconductor circuit board or power module according to the present invention is characterized by using the metal-ceramic bonding substrate.

本発明によれば、金属−セラミックス接合基板に放熱板を固定する場合にＰｂフリー半田を使用しても、半田やセラミックス基板にクラックが発生するのを効果的に防止することができる。   According to the present invention, even if Pb-free solder is used when fixing a heat sink to a metal / ceramic bonding substrate, cracks can be effectively prevented from occurring in the solder or ceramic substrate.

以下、添付図面を参照して、本発明による金属−セラミックス接合基板の実施の形態について説明する。   Embodiments of a metal / ceramic bonding substrate according to the present invention will be described below with reference to the accompanying drawings.

［第１の実施の形態］
図１を参照して、本発明による金属−セラミックス接合基板の第１の実施の形態について説明する。 [First Embodiment]
A first embodiment of a metal / ceramic bonding substrate according to the present invention will be described with reference to FIG.

図１に示すように、略矩形の平面形状のセラミックス基板１０の一方の面（図中上面）には、ろう材１２を介して、セラミックス基板１０よりも小さい略矩形の平面形状の銅または銅合金からなる回路用金属板１４の一方の面の略全面が接合されている。セラミックス基板１０として、窒化アルミニウム、窒化珪素またはアルミナを主成分とするセラミックス基板を使用することができるが、熱伝導の点から窒化アルミニウムまたは窒化珪素を主成分とするセラミックス基板を使用するのが好ましく、さらに、強度および靭性の点から四窒化三珪素（Ｓｉ３Ｎ４）などの窒化珪素を主成分とするセラミックス基板を使用するのが好ましい。 As shown in FIG. 1, copper or copper having a substantially rectangular planar shape smaller than the ceramic substrate 10 is disposed on one surface (upper surface in the drawing) of the substantially rectangular planar ceramic substrate 10 via a brazing material 12. The substantially entire surface of one surface of the metal plate for circuit 14 made of an alloy is joined. As the ceramic substrate 10, a ceramic substrate mainly composed of aluminum nitride, silicon nitride or alumina can be used. However, it is preferable to use a ceramic substrate mainly composed of aluminum nitride or silicon nitride from the viewpoint of heat conduction. Furthermore, it is preferable to use a ceramic substrate mainly composed of silicon nitride such as trisilicon tetranitride (Si 3 N 4 ) from the viewpoint of strength and toughness.

セラミックス基板１０の厚さは、０．０５ｍｍ未満では、強度および絶縁性が低下し、１．５ｍｍより厚いと熱伝導性が低下するので、０．０５〜１．５ｍｍであるのが好ましい。なお、熱衝撃時のセラミックス基板１０への応力を低減するために、ろう材１２が回路用金属板１４の周縁からはみ出して、幅０．０３ｍｍ以上のフィレット部を形成するのが好ましい。このフィレット部の幅が０．０３ｍｍ未満であると、応力低減効果が不十分な場合がある。ただし、フィレットの幅があまりにも大きいと、回路設計に制限が多くなり過ぎて、有効に使用することができる面積が小さくなるので、フィレットの幅が３ｍｍ以下であるのが好ましい。   If the thickness of the ceramic substrate 10 is less than 0.05 mm, the strength and the insulating properties are lowered, and if it is thicker than 1.5 mm, the thermal conductivity is lowered. Therefore, the thickness is preferably 0.05 to 1.5 mm. In order to reduce the stress on the ceramic substrate 10 at the time of thermal shock, it is preferable that the brazing material 12 protrudes from the peripheral edge of the circuit metal plate 14 to form a fillet portion having a width of 0.03 mm or more. If the width of the fillet portion is less than 0.03 mm, the stress reduction effect may be insufficient. However, if the fillet width is too large, there are too many restrictions on circuit design, and the area that can be used effectively becomes small. Therefore, the fillet width is preferably 3 mm or less.

セラミックス基板１０の他方の面（裏面、図中下面）には、ろう材１６を介して、セラミックス基板１０よりも小さい略矩形の平面形状を有する放熱板固定用金属板１８の一方の面の略全面が接合されている。この放熱板固定用金属板１８として、ビッカース硬さ４０〜６０の銅または銅合金からなる金属板を使用するのが好ましい。放熱板固定用金属板１８の厚さは、好ましくは０．０５〜１．５ｍｍ、さらに好ましくは０．０５〜０．８ｍｍである。０．０５ｍｍより薄いと大電流を流すことができなくなり、１．５ｍｍを超えるとろう接時にセラミックス基板にクラックが発生し易くなる。   The other surface (rear surface, lower surface in the figure) of the ceramic substrate 10 is substantially the same as the one surface of the heat sink fixing metal plate 18 having a substantially rectangular planar shape smaller than the ceramic substrate 10 via the brazing material 16. The whole surface is joined. As the heat radiating plate fixing metal plate 18, it is preferable to use a metal plate made of copper or copper alloy having a Vickers hardness of 40 to 60. The thickness of the heat sink fixing metal plate 18 is preferably 0.05 to 1.5 mm, more preferably 0.05 to 0.8 mm. If the thickness is less than 0.05 mm, a large current cannot flow, and if it exceeds 1.5 mm, cracks are likely to occur in the ceramic substrate during brazing.

放熱板固定用金属板１８として銅合金からなる金属板を使用すると、ろう接時に銅合金が再結晶化して結晶粒の粗大化するが、ビッカース硬さを４０〜６０に維持し、結晶粒径を０．２ｍｍ以下に調整するのが容易である。銅合金は、電気伝導性や熱伝導性に優れ、他の金属と比べて強度、半田付け性、耐食性などにも優れているが、接合後の銅合金のビッカース硬さが４０より小さいと、強度および剛性が不足し、一方、ビッカース硬さが６０を越えると、銅合金が硬くなり過ぎて、ヒートサイクル時のセラミックス基板１０へのダメージが大きくなり、寿命が低下する。また、結晶粒径が０．２ｍｍを超えると、ヒートサイクル時に結晶粒毎の熱膨張の相違を粒界が吸収しようとして、その直下のろう材１６に破壊の起点が生じたり、放熱板２２側のＰｂフリー半田２０にクラックの起点が生じたりして、信頼性が低下する。   When a metal plate made of a copper alloy is used as the heat sink fixing metal plate 18, the copper alloy recrystallizes during brazing and the crystal grains become coarse, but the Vickers hardness is maintained at 40-60, Is easily adjusted to 0.2 mm or less. Copper alloy is excellent in electrical conductivity and thermal conductivity, and excellent in strength, solderability, corrosion resistance, etc. compared to other metals, but when the Vickers hardness of the copper alloy after joining is less than 40, On the other hand, if the strength and rigidity are insufficient, and the Vickers hardness exceeds 60, the copper alloy becomes too hard, the damage to the ceramic substrate 10 during the heat cycle is increased, and the life is shortened. On the other hand, if the crystal grain size exceeds 0.2 mm, the grain boundary tends to absorb the difference in thermal expansion for each crystal grain during the heat cycle, and the brazing material 16 immediately below it may start to break, or the heat sink 22 side The starting point of a crack occurs in the Pb-free solder 20 and the reliability decreases.

銅合金として、析出物や酸化物などが分散した組織を有する銅合金を使用するのが好ましく、
ろう材による接合時の温度、例えば、Ａｇを主成分とするろう材を使用する場合には８００℃以上の温度で析出物が再固溶しない銅合金を使用すれば、結晶粒の極端な粗大化や強度の低下を効果的に防止することができる。特に、結晶粒径を０．２ｍｍ以下、好ましくは０．１５ｍｍ以下にするためには、ろう材による接合時の温度で結晶粒径を制御することができるように、銅合金中に存在する析出物が、接合時の温度で再固溶し難い大きさおよび組成を有するのが好ましく、１０ｎｍ以上の大きさであるのが好ましい。この析出物は、Ｎｉ−Ｔｉ系、Ｎｉ−Ｓｉ系、Ｃｕ−Ｚｒ系などの金属間化合物でもよいし、Ｆｅ−Ｐ系、Ｎｉ−Ｂ系、Ｃｕ−Ｏなどのりん化物、ほう化物、酸化物などでもよい。析出物が再固溶した場合でも、ろう接時の冷却過程で析出し、常温でできるだけ固溶しない組成の組み合わせや量である方が、電気伝導性や熱伝導性の点で有利である。 As the copper alloy, it is preferable to use a copper alloy having a structure in which precipitates and oxides are dispersed,
The temperature at the time of joining with a brazing material, for example, when using a brazing material containing Ag as a main component, if a copper alloy in which precipitates do not re-dissolve at a temperature of 800 ° C. or higher is used, the crystal grains become extremely coarse And reduction in strength can be effectively prevented. In particular, in order to make the crystal grain size 0.2 mm or less, preferably 0.15 mm or less, the precipitation existing in the copper alloy so that the crystal grain size can be controlled by the temperature at the time of joining with the brazing material. It is preferable that the material has a size and a composition that are difficult to be re-dissolved at the bonding temperature, and is preferably 10 nm or more. This precipitate may be an intermetallic compound such as Ni-Ti, Ni-Si, or Cu-Zr, or a phosphide, boride, or oxidation such as Fe-P, Ni-B, or Cu-O. Things may be used. Even in the case where the precipitate is re-dissolved, it is advantageous in terms of electrical conductivity and thermal conductivity that the amount and combination of the compositions are precipitated in the cooling process during brazing and do not dissolve as much as possible at room temperature.

銅合金からなる金属板は、展伸された板材であることが望ましく、電気伝導性や熱伝導性の点から、０．０１〜３重量％のＦｅ、０．０１〜５重量％のＮｉ、０．０１〜３重量％のＣｏ、０．０１〜３重量％のＴｉ、０．０１〜２重量％のＭｇ、０．０１〜２重量％のＺｒ、０．０１〜１重量％のＣａ、０．０１〜３重量％のＳｉ、０．０１〜５重量％のＭｎ、０．０１〜３重量％のＣｄ、０．０１〜５重量％のＡｌ、０．０１〜３重量％のＰｂ、０．０１〜３重量％のＢｉ、０．０１〜１重量％のＴｅ、０．０１〜３重量％のＹ、０．０１〜３重量％のＬａ、０．０１〜３重量％のＢｅ、０．０１〜３重量％のＣｅ、０．０１〜５重量％のＡｕ、０．０１〜１０重量％のＡｇ、０．０１〜１５重量％のＺｎ、０．０１〜５重量％のＳｎの少なくとも１種以上含み、残部がＣｕと不可避不純物である銅合金からなるのが好ましい。   The metal plate made of a copper alloy is preferably a stretched plate material. From the viewpoint of electrical conductivity and thermal conductivity, 0.01 to 3 wt% Fe, 0.01 to 5 wt% Ni, 0.01-3 wt% Co, 0.01-3 wt% Ti, 0.01-2 wt% Mg, 0.01-2 wt% Zr, 0.01-1 wt% Ca, 0.01-3 wt% Si, 0.01-5 wt% Mn, 0.01-3 wt% Cd, 0.01-5 wt% Al, 0.01-3 wt% Pb, 0.01-3 wt% Bi, 0.01-1 wt% Te, 0.01-3 wt% Y, 0.01-3 wt% La, 0.01-3 wt% Be, 0.01-3 wt% Ce, 0.01-5 wt% Au, 0.01-10 wt% Ag, 0.01-15 wt% Zn, 0.01-5 wt% Sn Small Kutomo comprise one or more, the balance of is made of copper alloy is Cu and inevitable impurities is preferred.

なお、セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として、純銅からなる金属板を使用してもよい。例えば、Ｃ１０２０無酸素銅からなる金属板を使用する場合には、ろう接時にろう材に含まれる元素がろう材から拡散して銅合金になる必要があるので、ろう材の成分や、ろう接の温度や時間を適宜に選定して、ろう接時にろう材に含まれる元素をろう材から銅板中に拡散させる必要がある。   In addition, you may use the metal plate which consists of pure copper as the heat sink fixing metal plate 18 joined to the back surface of the ceramic substrate 10. FIG. For example, when a metal plate made of C1020 oxygen-free copper is used, the elements contained in the brazing material need to diffuse from the brazing material during brazing and become a copper alloy. It is necessary to appropriately select the temperature and time of the metal to diffuse the elements contained in the brazing material from the brazing material into the copper plate during brazing.

すなわち、通常の銅板をろう材によってセラミックス基板に接合すると、ろう付け時の温度の影響によって銅板が著しく軟化し、ビッカース硬さが４０を下回り、強度および剛性が低下する。そのため、セラミックス基板から銅回路パターンを浮かせたり、はみ出させる場合には、軟化した銅板の変形によってアセンブリ工程で歩留まりが低下する。具体的には、銅板をセラミックス基板にろう接するためにＡｇ系ろう材を使用しているが、このろう接の際に８００℃以上の温度に加熱されるため、接合後に銅板のビッカース硬さが３０〜４０程度まで軟化し、また、銅の結晶粒が粗大化して０．２ｍｍを越える大きさになる。ビッカース硬さが低く、結晶粒が大きいと、Ｐｂフリー半田２０によって放熱板２２を固定した場合に、ヒートサイクルによりＰｂフリー半田２０またはセラミックス基板１０にクラックが生じ易く、信頼性が低下する。一般に、ビッカース硬さが低い方が塑性変形し易く、また、銅合金よりも純銅の方がクリープし易く、ヒートサイクルに対して有利であると考えられるが、実際にはヒートサイクルに対する信頼性が不十分であり、信頼性は結晶粒径との相互作用によると考えられる。そのため、銅板を使用する場合には、ろう材の成分が銅板に拡散することを利用して合金化する必要があり、ろう材の組成や接合条件などの制約が多くなる。Ａｇ系ろう材の成分を銅中に拡散させて合金化させる場合には、銅側の接合界面でＣｕとＡｇが合金化しているが、さらに粒界を中心としてＡｇやろう材の添加成分が拡散して合金化が進行する。表面や粒界に濃縮相が形成されるが、ろう材の接合部を除いた銅合金として分析した際に、上述した組成範囲の銅合金であることが好ましく、接合後の銅合金の硬さを４０〜６０にする必要がある。   That is, when a normal copper plate is joined to a ceramic substrate with a brazing material, the copper plate is remarkably softened due to the influence of the temperature during brazing, the Vickers hardness is less than 40, and the strength and rigidity are reduced. Therefore, when the copper circuit pattern is floated or protrudes from the ceramic substrate, the yield decreases in the assembly process due to the deformation of the softened copper plate. Specifically, an Ag-based brazing material is used to braze the copper plate to the ceramic substrate. However, since the brazing is heated to a temperature of 800 ° C. or higher, the Vickers hardness of the copper plate after joining is increased. It softens to about 30 to 40, and the crystal grains of copper become coarse and become a size exceeding 0.2 mm. If the Vickers hardness is low and the crystal grains are large, when the heat sink 22 is fixed by the Pb-free solder 20, cracks are likely to occur in the Pb-free solder 20 or the ceramic substrate 10 due to the heat cycle, and the reliability decreases. Generally, the lower the Vickers hardness, the easier the plastic deformation, and the pure copper is easier to creep than the copper alloy, and it is considered advantageous for the heat cycle. It is insufficient, and the reliability is considered to be due to the interaction with the crystal grain size. Therefore, when a copper plate is used, it is necessary to alloy by utilizing the diffusion of the brazing material components into the copper plate, which increases restrictions on the composition of the brazing material and the joining conditions. In the case of alloying by diffusing the component of the Ag-based brazing material into copper, Cu and Ag are alloyed at the bonding interface on the copper side, but the additive component of Ag and brazing material is further centered on the grain boundary. Diffusion and alloying proceeds. A concentrated phase is formed on the surface and grain boundaries, but when analyzed as a copper alloy excluding the solder joint, it is preferably a copper alloy having the above composition range, and the hardness of the copper alloy after joining Needs to be 40-60.

また、放熱板固定用金属板１８の放熱面（裏面、図中下面）の略全面には、Ｐｂフリー半田２０により、放熱板固定用金属板１８より大きい略矩形の平面形状の放熱板（放熱用金属ベース板）２２が固定されている。Ｐｂフリー半田２０の露出面は、放熱板固定用金属板１８の周縁から放熱板２２の周縁部付近に向かって傾斜しており、この露出面と放熱板２２の接合面との間の角度θが３０〜７０°になるのが好ましく、５０°以下になるのがさらに好ましい。この角度θが７０°より大きいと、応力が大きくなり、半田クラックが発生し易くなる。なお、この角度は、半田付けした部位の断面を観察した際のおおよその角度であり、曲線の角度を厳密に捉えたものではない。   Further, a substantially rectangular planar heat dissipation plate (heat dissipation) larger than the heat dissipation plate fixing metal plate 18 is formed on substantially the entire heat dissipation surface (back surface, lower surface in the drawing) of the heat dissipation plate fixing metal plate 18 by Pb-free solder 20. Metal base plate) 22 is fixed. The exposed surface of the Pb-free solder 20 is inclined from the periphery of the heat sink fixing metal plate 18 toward the periphery of the heat sink 22, and the angle θ between the exposed surface and the joint surface of the heat sink 22. Is preferably 30 to 70 °, more preferably 50 ° or less. If the angle θ is greater than 70 °, the stress increases and solder cracks are likely to occur. This angle is an approximate angle when the cross section of the soldered portion is observed, and is not a precise angle of the curve.

このように、セラミックス基板１０の裏面に接合される放熱板固定用金属板１８としてビッカース硬さ４０〜６０の銅または銅合金からなる金属板を使用することにより、さらに、Ｐｂフリー半田２０の露出面を放熱板固定用金属板１８の周縁から放熱板２２の周縁部付近に向かって傾斜させることにより、図中矢印ＡおよびＢで示すようにヒートサイクルの冷却時の熱収縮による応力が加えられても、放熱板固定用金属板１８の周縁部とＰｂフリー半田２０の周縁部との接合部（図中点線で示す領域２４）やＰｂフリー半田２０の周縁部と放熱板２２との接合部（図中点線で示す領域２６）に集中する応力を分散させることができる。その結果、Ｐｂフリー半田２０にクラックが生じるのを防止することができるとともに、セラミックス基板１０にクラックが生じるのを防止することができる。   Thus, by using a metal plate made of copper or copper alloy having a Vickers hardness of 40 to 60 as the heat sink fixing metal plate 18 joined to the back surface of the ceramic substrate 10, the Pb-free solder 20 is further exposed. By inclining the surface from the periphery of the heat sink fixing metal plate 18 toward the vicinity of the periphery of the heat sink 22, stress due to thermal contraction during cooling of the heat cycle is applied as indicated by arrows A and B in the figure. However, the joint between the peripheral portion of the heat sink fixing metal plate 18 and the peripheral portion of the Pb-free solder 20 (region 24 indicated by a dotted line in the figure), or the joint portion between the peripheral portion of the Pb-free solder 20 and the heat sink 22 It is possible to disperse the stress concentrated on (the region 26 indicated by the dotted line in the figure). As a result, it is possible to prevent the Pb-free solder 20 from being cracked and to prevent the ceramic substrate 10 from being cracked.

［第２の実施の形態］
図２を参照して、本発明による金属−セラミックス接合基板の第２の実施の形態について説明する。なお、本実施の形態において、第１の実施の形態と同一の部分については、同一の参照符号を付して、その説明を省略する。 [Second Embodiment]
With reference to FIG. 2, a second embodiment of the metal / ceramic bonding substrate according to the present invention will be described. In the present embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

図２に示すように、本実施形態では、セラミックス基板１０の裏面（図中下面）にろう材１１６を介して接合される略矩形の平面形状の放熱板固定用金属板１１８が、セラミックス基板１０より大きくなっている。また、放熱板固定用金属板１１８は、セラミックス基板１０の周縁から好ましくは０．１ｍｍ以上、さらに好ましくは１．０ｍｍ以上はみ出すように配置されて、放熱板固定用金属板１８の周縁部がセラミックス基板１０に接合しないようにすることによって、放熱板固定用金属板１８の周縁の全周に沿って所定の幅の非接合部が形成されている。その他の構成は、上述した第１の実施の形態と略同一である。本実施の形態では、第１の実施の形態と同様に、セラミックス基板１０の裏面に接合される放熱板固定用金属板１８としてビッカース硬さ４０〜６０の銅または銅合金からなる金属板を使用することにより、さらに、Ｐｂフリー半田１２０の露出面を放熱板固定用金属板１１８の周縁から放熱板２２の周縁部付近に向かって傾斜させるだけでなく、放熱板固定用金属板１８の周縁の全周に沿って延びる所定の幅の非接合部を設けてセラミックス基板１０に拘束されない部分を形成することにより、図中矢印ＡおよびＢで示すようにヒートサイクルの冷却時の熱収縮による応力が加えられても、放熱板固定用金属板１１８の非接合部で応力を緩和することができるとともに、Ｐｂフリー半田２０の周縁部全体（図中点線で示す領域１２４）に応力を分散させることができる。その結果、Ｐｂフリー半田１２０にクラックが生じるのを防止することができるとともに、セラミックス基板１０にクラックが生じるのを防止することができる。   As shown in FIG. 2, in the present embodiment, a substantially rectangular planar heat sink fixing metal plate 118 joined to the back surface (lower surface in the drawing) of the ceramic substrate 10 via a brazing material 116 is provided on the ceramic substrate 10. It is getting bigger. Further, the heat sink fixing metal plate 118 is disposed so as to protrude from the periphery of the ceramic substrate 10 by preferably 0.1 mm or more, and more preferably 1.0 mm or more. By not joining the substrate 10, a non-joined portion having a predetermined width is formed along the entire circumference of the peripheral edge of the heat sink fixing metal plate 18. Other configurations are substantially the same as those of the first embodiment described above. In the present embodiment, similarly to the first embodiment, a metal plate made of copper or a copper alloy having a Vickers hardness of 40 to 60 is used as the heat sink fixing metal plate 18 bonded to the back surface of the ceramic substrate 10. In addition to inclining the exposed surface of the Pb-free solder 120 from the periphery of the heat sink fixing metal plate 118 toward the periphery of the heat sink 22, By providing a non-bonded portion having a predetermined width extending along the entire circumference to form a portion that is not constrained by the ceramic substrate 10, stress due to thermal contraction during cooling of the heat cycle is shown as indicated by arrows A and B in the figure. Even if added, the stress can be relieved at the non-joined portion of the heat sink fixing metal plate 118 and the entire peripheral portion of the Pb-free solder 20 (region 124 indicated by a dotted line in the figure) can be accommodated. It can be dispersed. As a result, it is possible to prevent the Pb-free solder 120 from being cracked and to prevent the ceramic substrate 10 from being cracked.

［第３の実施の形態］
図３を参照して、本発明による金属−セラミックス接合基板の第３の実施の形態について説明する。なお、本実施の形態において、第１の実施の形態と同一の部分については、同一の参照符号を付して、その説明を省略する。 [Third Embodiment]
A third embodiment of the metal / ceramic bonding substrate according to the present invention will be described with reference to FIG. In the present embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

図３に示すように、本実施形態では、セラミックス基板１０の裏面（図中下面）にろう材２１６を介して接合される略矩形の平面形状の放熱板固定用金属板２１８が、セラミックス基板１０より小さくなっている。その他の構成は、上述した第２の実施の形態と略同一である。本実施の形態では、第１の実施の形態と同様に、セラミックス基板１０の裏面に接合される放熱板固定用金属板１８としてビッカース硬さ４０〜６０の銅または銅合金からなる金属板を使用することにより、さらに、Ｐｂフリー半田２２０の露出面と放熱板固定用金属板２１８の接合面との角度θが３０〜７０°になるように、露出面を放熱板固定用金属板２１８の周縁から放熱板２２の周縁付近に向かって傾斜させるだけでなく、放熱板固定用金属板２１８の周縁の全周に沿って延びる所定の幅の非接合部、すなわち、ろう材２１６によってセラミックス基板１０に接合されない部分を設けることにより、図中矢印ＡおよびＢで示すようにヒートサイクルの冷却時の熱収縮による応力が加えられても、放熱板固定用金属板２１８の非接合部全体（図中点線で示す領域２２４）で応力を緩和することができる。その結果、Ｐｂフリー半田２２０にクラックが生じるのを防止することができるとともに、セラミックス基板１０にクラックが生じるのを防止することができる。   As shown in FIG. 3, in the present embodiment, a substantially rectangular planar heat sink fixing metal plate 218 bonded to the back surface (lower surface in the drawing) of the ceramic substrate 10 via a brazing material 216 is formed on the ceramic substrate 10. It is getting smaller. Other configurations are substantially the same as those of the second embodiment described above. In the present embodiment, similarly to the first embodiment, a metal plate made of copper or a copper alloy having a Vickers hardness of 40 to 60 is used as the heat sink fixing metal plate 18 bonded to the back surface of the ceramic substrate 10. By doing so, the exposed surface of the Pb-free solder 220 and the peripheral surface of the heat sink fixing metal plate 218 are adjusted so that the angle θ between the exposed surface of the Pb free solder 220 and the joint surface of the heat sink fixing metal plate 218 is 30 to 70 °. In addition to inclining toward the vicinity of the periphery of the heat sink 22, the ceramic substrate 10 is bonded to the ceramic substrate 10 by a non-joint portion having a predetermined width extending along the entire periphery of the metal plate 218 for fixing the heat sink, that is, the brazing material 216. By providing a portion that is not joined, as shown by arrows A and B in the figure, even if stress due to thermal contraction during cooling of the heat cycle is applied, the entire non-joined portion of the heat sink fixing metal plate 218 Stress can be relieved by the body (region 224 indicated by a dotted line in the figure). As a result, it is possible to prevent the Pb-free solder 220 from being cracked and to prevent the ceramic substrate 10 from being cracked.

［第４の実施の形態］
図４および図５を参照して、本発明による金属−セラミックス接合基板の第４の実施の形態について説明する。なお、本実施の形態において、第１の実施の形態と同一の部分については、同一の参照符号を付して、その説明を省略する。 [Fourth Embodiment]
A fourth embodiment of the metal / ceramic bonding substrate according to the present invention will be described with reference to FIGS. In the present embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

図４および図５に示すように、本実施の形態では、第２および第３の実施の形態と異なり、セラミックス基板１０の裏面（図４において下面）の周縁の全周に沿って所定の幅のろう材３１６を塗布するとともに、この周縁から所定の距離（ろう材３１６の幅）だけ離間して周縁の全周に沿って延びる所定の幅の非接合部を除いた部分にろう材３１７を塗布することにより、セラミックス基板１０の裏面に接合する略矩形の平面形状の放熱板固定用金属板３１８の所定の幅の非接合部が、放熱板固定用金属板３１８の周縁から所定の距離だけ離間して放熱板固定用金属板３１８の周縁の全周に沿って延びている。その他の構成は、上述した第２および第３の実施の形態と略同一である。本実施の形態では、第１〜第３の実施の形態と同様に、ヒートサイクルの冷却時の熱収縮による応力が加えられても、放熱板固定用金属板３１８の周縁部付近の非接合部で応力を緩和することができる。その結果、Ｐｂフリー半田３２０にクラックが生じるのを防止することができるとともに、セラミックス基板１０にクラックが生じるのを防止することができる。   As shown in FIGS. 4 and 5, unlike the second and third embodiments, the present embodiment has a predetermined width along the entire circumference of the periphery of the back surface (the lower surface in FIG. 4) of the ceramic substrate 10. A brazing filler metal 316 is applied, and a brazing filler metal 317 is applied to a portion excluding a non-joined portion having a predetermined width that is separated from the peripheral edge by a predetermined distance (the width of the brazing filler metal 316) and extends along the entire circumference of the peripheral edge. By applying, a non-joint portion of a predetermined width of the substantially rectangular planar heat sink fixing metal plate 318 bonded to the back surface of the ceramic substrate 10 is a predetermined distance from the periphery of the heat sink fixing metal plate 318. The heat sink fixing metal plate 318 is spaced apart and extends along the entire periphery. Other configurations are substantially the same as those of the second and third embodiments described above. In the present embodiment, as in the first to third embodiments, the non-joint portion in the vicinity of the peripheral portion of the heat sink fixing metal plate 318 even if stress due to thermal contraction during cooling of the heat cycle is applied. The stress can be relaxed. As a result, it is possible to prevent the Pb-free solder 320 from being cracked and to prevent the ceramic substrate 10 from being cracked.

なお、上述した第２〜第４の実施の形態において放熱板固定用金属板１１８、２１８、３１８の周縁部または周縁部付近に設けた非接合部の所定の幅は、０．１ｍｍ以上であるのが好ましく、１．０〜３．０ｍｍであるのがさらに好ましい。０．１ｍｍより狭いと、応力を緩和するのに不十分であり、３．０ｍｍより広いと、熱伝導性の低下などの問題が生じる。また、このような非接合部の代わりに、上述した第１〜第４の実施の形態において、放熱板固定用金属板１１８、２１８、３１８とセラミックス基板１０との間の接合部を、互いに離間した複数の線状や点状の接合部などの様々な形状の接合部にしてもよい。このような形状の接合部にしても、セラミックス基板１０への応力を低減させることができる。   In the second to fourth embodiments described above, the predetermined width of the non-joint portion provided at or near the periphery of the heat sink fixing metal plates 118, 218, 318 is 0.1 mm or more. It is more preferable that it is 1.0-3.0 mm. If it is narrower than 0.1 mm, it is insufficient to relieve stress, and if it is larger than 3.0 mm, problems such as a decrease in thermal conductivity occur. Further, in place of such a non-joining portion, in the first to fourth embodiments described above, the joining portions between the heat sink fixing metal plates 118, 218, 318 and the ceramic substrate 10 are separated from each other. Various joints such as a plurality of linear or dot joints may be used. Even if it is a junction part of such a shape, the stress to the ceramic substrate 10 can be reduced.

以下、本発明による金属−セラミックス接合基板の実施例について詳細に説明する。   Hereinafter, examples of the metal / ceramic bonding substrate according to the present invention will be described in detail.

［実施例１］
図１において、セラミックス基板１０として４０ｍｍ×４０ｍｍ×０．６３５ｍｍの大きさの窒化アルミニウム基板を使用し、セラミックス基板１０の上面に接合する回路用金属板１４として厚さ０．３ｍｍの無酸素銅板を使用し、セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．４ｍｍの無酸素銅板を使用し、ろう材１２および１６の厚さを０．０２ｍｍとして、第１の実施の形態と同様の金属−セラミックス接合基板を作製した。なお、ろう材１２および１６として、Ａｇ、Ｃｕ、Ｔｉ、Ｓｎ、ＦｅおよびＩｎ成分を含むろう材を使用し、接合時にろう材の成分を金属板１４および１８に拡散させて、接合後の金属板１４および１８のビッカース硬さが４４になり且つ平均結晶粒径０．１２ｍｍになるように、ろう接の温度と時間を調整した。 [Example 1]
In FIG. 1, an aluminum nitride substrate having a size of 40 mm × 40 mm × 0.635 mm is used as the ceramic substrate 10, and an oxygen-free copper plate having a thickness of 0.3 mm is used as the circuit metal plate 14 bonded to the upper surface of the ceramic substrate 10. In the first embodiment, an oxygen-free copper plate having a thickness of 0.4 mm is used as the heat sink fixing metal plate 18 to be bonded to the back surface of the ceramic substrate 10, and the thicknesses of the brazing materials 12 and 16 are set to 0.02 mm. A metal-ceramic bonding substrate similar to that in Example 1 was prepared. In addition, the brazing material containing Ag, Cu, Ti, Sn, Fe and In components is used as the brazing materials 12 and 16, and the components of the brazing material are diffused into the metal plates 14 and 18 at the time of joining, so that the metal after joining The brazing temperature and time were adjusted so that the plates 14 and 18 had a Vickers hardness of 44 and an average crystal grain size of 0.12 mm.

このようにして作製した金属−セラミックス接合基板に、Ｐｂフリー半田２０を使用して、放熱板２２としての６９ｍｍ×６９ｍｍ×４ｍｍの大きさの銅板を固定した。なお、Ｐｂフリー半田２０として、Ｓｎ−Ａｇ系のＰｂフリー半田や、Ｃｕ、Ｂｉ、ＳｂまたはＺｎなどを添加した各種のＰｂフリー半田を使用した。   A copper plate having a size of 69 mm × 69 mm × 4 mm as the heat radiating plate 22 was fixed to the metal-ceramic bonding substrate thus produced using Pb-free solder 20. As the Pb-free solder 20, Sn-Ag-based Pb-free solder and various Pb-free solders added with Cu, Bi, Sb, Zn or the like were used.

このようにして放熱板２２を固定した金属−セラミックス接合基板について、２０℃→−４０℃×３０分→２０℃×１０分→１２５℃×３０分→２０℃×１０分を１サイクルとする繰り返しヒートサイクルを３００回行った後に、金属板１４、１８とろう材１２、１６を除去して窒化アルミニウム基板の表面を光学顕微鏡で観察したところ、窒化アルミニウム基板にクラックの発生はなかった。また、Ｐｂフリー半田２０の表面を光学顕微鏡で観察したところ、いずれのＰｂフリー半田の場合もクラックの発生はなかった。   For the metal / ceramic bonding substrate to which the heat sink 22 is fixed in this way, 20 ° C. → −40 ° C. × 30 minutes → 20 ° C. × 10 minutes → 125 ° C. × 30 minutes → 20 ° C. × 10 minutes is repeated as one cycle. After 300 heat cycles, the metal plates 14 and 18 and the brazing materials 12 and 16 were removed, and the surface of the aluminum nitride substrate was observed with an optical microscope. As a result, no cracks were generated in the aluminum nitride substrate. Further, when the surface of the Pb-free solder 20 was observed with an optical microscope, no crack was generated in any of the Pb-free solders.

［実施例２］
セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．６ｍｍのＣｕ−０．１２Ｚｒ−０．１Ｃｏ−０．０３Ｐ合金からなる銅合金板を使用した以外は実施例１と同様の方法により、第１の実施の形態と同様の金属−セラミックス接合基板を作製した。なお、ろう材１２および１６として、Ａｇ、ＣｕおよびＴｉ成分を含むろう材を使用し、接合時にろう材の成分を金属板１４および１８に拡散させて、接合後の金属板１４および１８のビッカース硬さが４６になり且つ平均結晶粒径０．１４ｍｍになるように調整した。 [Example 2]
Example 1 except that a copper alloy plate made of a Cu-0.12Zr-0.1Co-0.03P alloy having a thickness of 0.6 mm was used as the heat sink fixing metal plate 18 to be bonded to the back surface of the ceramic substrate 10. A metal-ceramic bonding substrate similar to that of the first embodiment was produced by the same method. In addition, the brazing material containing Ag, Cu, and Ti components is used as the brazing materials 12 and 16, and the components of the brazing material are diffused into the metal plates 14 and 18 at the time of joining, so that the Vickers of the metal plates 14 and 18 after joining is obtained. The hardness was adjusted to 46 and the average crystal grain size was adjusted to 0.14 mm.

このようにして作製した金属−セラミックス接合基板に、実施例１と同様のＰｂフリー半田２０を使用して実施例１と同様の放熱板２２を固定し、実施例１と同様に繰り返しヒートサイクルを３００回行った後に、窒化アルミニウム基板の表面とＰｂフリー半田２０の表面を光学顕微鏡で観察したところ、窒化アルミニウム基板にクラックの発生はなく、半田クラックの発生もなかった。   A heat sink 22 similar to that in Example 1 is fixed to the metal-ceramic bonding substrate thus manufactured using the same Pb-free solder 20 as in Example 1, and a repeated heat cycle is performed as in Example 1. After performing 300 times, the surface of the aluminum nitride substrate and the surface of the Pb-free solder 20 were observed with an optical microscope. As a result, no cracks were generated on the aluminum nitride substrate and no solder cracks were generated.

［実施例３］
セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．２５ｍｍのＣｕ−０．２Ｓｎ−０．２Ｃｒ合金からなる銅合金板を使用した以外は実施例１と同様の方法により、第１の実施の形態と同様の金属−セラミックス接合基板を作製した。なお、接合時にろう材の成分を金属板１４および１８に拡散させて、接合後の金属板１４および１８のビッカース硬さが４２になり且つ平均結晶粒径０．１４ｍｍになるように調整した。 [Example 3]
Except for using a copper alloy plate made of Cu-0.2Sn-0.2Cr alloy having a thickness of 0.25 mm as the heat sink fixing metal plate 18 to be bonded to the back surface of the ceramic substrate 10, the same method as in Example 1 was used. A metal-ceramic bonding substrate similar to that in the first embodiment was produced. The components of the brazing material were diffused in the metal plates 14 and 18 at the time of joining so that the Vickers hardness of the joined metal plates 14 and 18 was 42 and the average crystal grain size was 0.14 mm.

このようにして作製した金属−セラミックス接合基板に、実施例１と同様のＰｂフリー半田２０を使用して実施例１と同様の放熱板２２を固定し、実施例１と同様に繰り返しヒートサイクルを３００回行った後に、窒化アルミニウム基板の表面とＰｂフリー半田２０の表面を光学顕微鏡で観察したところ、窒化アルミニウム基板にクラックの発生はなく、半田クラックの発生もなかった。   A heat sink 22 similar to that in Example 1 is fixed to the metal-ceramic bonding substrate thus manufactured using the same Pb-free solder 20 as in Example 1, and a repeated heat cycle is performed as in Example 1. After performing 300 times, the surface of the aluminum nitride substrate and the surface of the Pb-free solder 20 were observed with an optical microscope. As a result, no cracks were generated on the aluminum nitride substrate and no solder cracks were generated.

［実施例４］
セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．１５ｍｍのＣｕ−０．３Ｃｒ−０．１Ｔｉ−０．１Ｚｒ−０．１Ｎｉ合金からなる銅合金板を使用した以外は実施例３と同様の方法により、第１の実施の形態と同様の金属−セラミックス接合基板を作製した。なお、接合時にろう材の成分を金属板１４および１８に拡散させて、接合後の金属板１４および１８のビッカース硬さが４５になり且つ平均結晶粒径０．０９ｍｍになるように調整した。 [Example 4]
Except for using a copper alloy plate made of a Cu-0.3Cr-0.1Ti-0.1Zr-0.1Ni alloy having a thickness of 0.15 mm as the heat sink fixing metal plate 18 to be bonded to the back surface of the ceramic substrate 10. A metal-ceramic bonding substrate similar to that of the first embodiment was produced by the same method as in Example 3. In addition, the components of the brazing material were diffused in the metal plates 14 and 18 at the time of joining so that the Vickers hardness of the joined metal plates 14 and 18 was 45 and the average crystal grain size was 0.09 mm.

このようにして作製した金属−セラミックス接合基板に、実施例１と同様のＰｂフリー半田２０を使用して実施例１と同様の放熱板２２を固定し、実施例１と同様に繰り返しヒートサイクルを３００回行った後に、窒化アルミニウム基板の表面とＰｂフリー半田２０の表面を光学顕微鏡で観察したところ、窒化アルミニウム基板にクラックの発生はなく、半田クラックの発生もなかった。   A heat sink 22 similar to that in Example 1 is fixed to the metal-ceramic bonding substrate thus manufactured using the same Pb-free solder 20 as in Example 1, and a repeated heat cycle is performed as in Example 1. After performing 300 times, the surface of the aluminum nitride substrate and the surface of the Pb-free solder 20 were observed with an optical microscope. As a result, no cracks were generated on the aluminum nitride substrate and no solder cracks were generated.

［比較例１］
図５に示すように、セラミックス基板１０として４０ｍｍ×４０ｍｍ×０．６３５ｍｍの大きさの窒化アルミニウム基板を使用し、セラミックス基板１０の上面に接合する回路用金属板１４として厚さ０．３ｍｍの銅板を使用し、セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．１５ｍｍの銅板を使用し、ろう材１２および１６の厚さを０．０２ｍｍとして、第１の実施の形態と同様の金属−セラミックス接合基板を作製した。なお、ろう材１２および１６として実施例１と同様のＡｇ合金ろう材を使用したが、ろう材の成分の銅への拡散が不十分であり、ビッカース硬さが３５、平均結晶粒径が０．２２ｍｍであった。 [Comparative Example 1]
As shown in FIG. 5, an aluminum nitride substrate having a size of 40 mm × 40 mm × 0.635 mm is used as the ceramic substrate 10, and a copper plate having a thickness of 0.3 mm is used as the circuit metal plate 14 bonded to the upper surface of the ceramic substrate 10. In the first embodiment, a copper plate having a thickness of 0.15 mm is used as the heat-dissipating plate fixing metal plate 18 bonded to the back surface of the ceramic substrate 10, and the brazing materials 12 and 16 have a thickness of 0.02 mm. A metal-ceramic bonding substrate having the same shape as that of the present embodiment was produced. Note that the same Ag alloy brazing material as in Example 1 was used as the brazing filler metals 12 and 16, but the diffusion of the brazing filler components into copper was insufficient, the Vickers hardness was 35, and the average crystal grain size was 0. .22 mm.

このようにして作製した金属−セラミックス接合基板に、実施例１と同様のＰｂフリー半田２０を使用して実施例１と同様の放熱板２２を固定し、実施例１と同様に繰り返しヒートサイクルを３００回行った後に、窒化アルミニウム基板の表面とＰｂフリー半田２０の表面を光学顕微鏡で観察したところ、窒化アルミニウム基板にクラックの発生はなかったが、半田クラックの発生が認められた。   A heat sink 22 similar to that in Example 1 is fixed to the metal-ceramic bonding substrate thus manufactured using the same Pb-free solder 20 as in Example 1, and a repeated heat cycle is performed as in Example 1. After performing 300 times, when the surface of the aluminum nitride substrate and the surface of the Pb-free solder 20 were observed with an optical microscope, the aluminum nitride substrate was not cracked, but the occurrence of solder cracks was observed.

［比較例２］
セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．４ｍｍの銅板を使用した以外は比較例１と同様の方法により、比較例１と同様の金属−セラミックス接合基板を作製した。このようにして作製した金属−セラミックス接合基板に、実施例１と同様のＰｂフリー半田２０を使用して実施例１と同様の放熱板２２を固定し、実施例１と同様に繰り返しヒートサイクルを３００回行った後に、窒化アルミニウム基板の表面とＰｂフリー半田２０の表面を光学顕微鏡で観察したところ、半田クラックの発生はなかったが、窒化アルミニウム基板にクラックの発生が認められた。 [Comparative Example 2]
A metal / ceramic bonding substrate similar to that in Comparative Example 1 was produced in the same manner as in Comparative Example 1 except that a 0.4 mm thick copper plate was used as the heat sink fixing metal plate 18 to be bonded to the back surface of the ceramic substrate 10. did. A heat sink 22 similar to that in Example 1 is fixed to the metal-ceramic bonding substrate thus manufactured using the same Pb-free solder 20 as in Example 1, and a repeated heat cycle is performed as in Example 1. After performing 300 times, when the surface of the aluminum nitride substrate and the surface of the Pb-free solder 20 were observed with an optical microscope, no solder cracks were observed, but cracks were observed in the aluminum nitride substrate.

［比較例３］
セラミックス基板１０の裏面に接合する放熱板固定用金属板１８として厚さ０．６ｍｍの銅板を使用した以外は比較例１と同様の方法により、比較例１と同様の金属−セラミックス接合基板を作製した。このようにして作製した金属−セラミックス接合基板に、実施例１と同様のＰｂフリー半田２０を使用して実施例１と同様の放熱板２２を固定し、実施例１と同様に繰り返しヒートサイクルを３００回行った後に、窒化アルミニウム基板の表面とＰｂフリー半田２０の表面を光学顕微鏡で観察したところ、半田クラックの発生はなかったが、窒化アルミニウム基板にクラックの発生が認められた。 [Comparative Example 3]
A metal / ceramic bonding substrate similar to that in Comparative Example 1 was produced in the same manner as in Comparative Example 1 except that a copper plate having a thickness of 0.6 mm was used as the heat sink fixing metal plate 18 to be bonded to the back surface of the ceramic substrate 10. did. A heat sink 22 similar to that in Example 1 is fixed to the metal-ceramic bonding substrate thus manufactured using the same Pb-free solder 20 as in Example 1, and a repeated heat cycle is performed as in Example 1. After performing 300 times, when the surface of the aluminum nitride substrate and the surface of the Pb-free solder 20 were observed with an optical microscope, no solder cracks were observed, but cracks were observed in the aluminum nitride substrate.

本発明による金属−セラミックス接合基板の第１の実施の形態の概略側面図である。1 is a schematic side view of a first embodiment of a metal / ceramic bonding substrate according to the present invention. 本発明による金属−セラミックス接合基板の第２の実施の形態の概略側面図である。It is a schematic side view of 2nd Embodiment of the metal-ceramics junction board | substrate by this invention. 本発明による金属−セラミックス接合基板の第３の実施の形態の概略側面図である。It is a schematic side view of 3rd Embodiment of the metal-ceramics bonding board | substrate by this invention. 本発明による金属−セラミックス接合基板の第４の実施の形態の概略側面図である。It is a schematic side view of 4th Embodiment of the metal-ceramics bonding board | substrate by this invention. 本発明による金属−セラミックス接合基板の第４の実施の形態のセラミックス基板の裏面に塗布したろう材を概略的に示す平面図である。It is a top view which shows roughly the brazing material apply | coated to the back surface of the ceramic substrate of 4th Embodiment of the metal-ceramic bonding board | substrate by this invention.

符号の説明Explanation of symbols

１０ セラミックス基板
１２、１６、１１６、２１６、３１６、３１７ ろう材
１４ 回路用金属板
１８、１１８、２１８、３１８ 放熱板固定用金属板
２０、１２０、２２０，３２０ Ｐｂフリー半田
２２ 放熱板
DESCRIPTION OF SYMBOLS 10 Ceramic substrate 12, 16, 116, 216, 316, 317 Brazing material 14 Circuit metal plate 18, 118, 218, 318 Metal plate for fixing heat sink 20, 120, 220, 320 Pb free solder 22 Heat sink

Claims (20)

セラミックス基板の一方の面に放熱板固定用金属板の一方の面が接合した金属−セラミックス接合基板において、前記放熱板固定用金属板のビッカース硬さが４０〜６０であることを特徴とする、金属−セラミックス接合基板。 In the metal-ceramic bonding substrate in which one surface of the heat sink fixing metal plate is bonded to one surface of the ceramic substrate, the Vickers hardness of the heat sink fixing metal plate is 40 to 60, Metal-ceramic bonding substrate. 前記放熱板固定用金属板が銅または銅合金からなることを特徴とする、請求項１に記載の金属−セラミックス接合基板。 The metal / ceramic bonding substrate according to claim 1, wherein the heat sink fixing metal plate is made of copper or a copper alloy. 前記放熱板固定用金属板の結晶粒径が０．２ｍｍ以下であることを特徴とする、請求項１または２に記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to claim 1 or 2, wherein the heat sink fixing metal plate has a crystal grain size of 0.2 mm or less. 前記放熱板固定用金属板の厚さが０．０５ｍｍ以上であることを特徴とする、請求項１乃至３のいずれかに記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 3, wherein a thickness of the heat sink fixing metal plate is 0.05 mm or more. 前記セラミックス基板の一方の面にろう材を介して前記放熱板固定用金属板の一方の面が接合し、前記放熱板固定用金属板の他方の面に、この放熱板固定用金属板より大きい平面形状の放熱板が半田によって固定されていることを特徴とする、請求項１乃至４のいずれかに記載の金属−セラミックス接合基板。 One surface of the heat sink fixing metal plate is joined to one surface of the ceramic substrate via a brazing material, and the other surface of the heat sink fixing metal plate is larger than the heat sink fixing metal plate. 5. The metal / ceramic bonding substrate according to claim 1, wherein the planar heat sink is fixed by solder. 前記半田が実質的に鉛を含まない半田であることを特徴とする、請求項５に記載の金属−セラミックス接合基板。 6. The metal / ceramic bonding substrate according to claim 5, wherein the solder is a solder containing substantially no lead. 前記半田の露出面が前記放熱板固定用金属板の一方の面の周縁から前記放熱板の周縁部付近に向かって傾斜していることを特徴とする、請求項５または６に記載の金属−セラミックス接合基板。 7. The metal according to claim 5, wherein the exposed surface of the solder is inclined from the periphery of one surface of the heat sink fixing metal plate toward the vicinity of the periphery of the heat sink. Ceramic bonding substrate. 前記半田の露出面と前記放熱板の固定面との間の角度が３０〜７０°であることを特徴とする、請求項７に記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to claim 7, wherein an angle between the exposed surface of the solder and the fixing surface of the heat sink is 30 to 70 °. 前記セラミックス基板の一方の面に前記放熱板固定用金属板の一方の面を接合するために塗布される前記ろう材の形状を、互いに離間した複数の線状または点状にすることにより、前記セラミックス基板の一方の面と前記放熱板固定用金属板の一方の面との間に非接合部が設けられていることを特徴とする、請求項５乃至８のいずれかに記載の金属−セラミックス接合基板。 By making the shape of the brazing material applied to join one surface of the metal plate for fixing the heat sink to one surface of the ceramic substrate, a plurality of lines or dots separated from each other, The metal-ceramic according to any one of claims 5 to 8, wherein a non-joining portion is provided between one surface of the ceramic substrate and one surface of the heat sink fixing metal plate. Bonded substrate. 前記放熱板固定用金属板の一方の面の周縁部または周縁部付近に所定の幅の非接合部が設けられていることを特徴とする、請求項５乃至８のいずれかに記載の金属−セラミックス接合基板。 9. The metal according to claim 5, wherein a non-joining portion having a predetermined width is provided in a peripheral portion of the one surface of the heat sink fixing metal plate or in the vicinity of the peripheral portion. Ceramic bonding substrate. 前記非接合部が、前記放熱板固定用金属板の一方の面の周縁の全周に沿って延びていることを特徴とする、請求項１０に記載の金属−セラミックス接合基板。 11. The metal / ceramic bonding substrate according to claim 10, wherein the non-joining portion extends along the entire circumference of a peripheral edge of one surface of the heat sink fixing metal plate. 前記非接合部が、前記放熱板固定用金属板の一方の面の周縁から所定の距離だけ離間していることを特徴とする、請求項１０または１１に記載の金属−セラミックス接合基板。 12. The metal / ceramic bonding substrate according to claim 10, wherein the non-joining portion is separated from a peripheral edge of one surface of the heat sink fixing metal plate by a predetermined distance. 前記所定の距離が０．１ｍｍ以上であることを特徴とする、請求項１２に記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to claim 12, wherein the predetermined distance is 0.1 mm or more. 前記所定の幅が０．１ｍｍ以上であることを特徴とする、請求項１０乃至１３のいずれかに記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 10 to 13, wherein the predetermined width is 0.1 mm or more. 前記所定の幅が０．２５〜３．０ｍｍであることを特徴とする、請求項１０乃至１３のいずれかに記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 10 to 13, wherein the predetermined width is 0.25 to 3.0 mm. 前記セラミックス基板が窒化アルミニウム基板または窒化珪素基板であることを特徴とする、請求項１乃至１５のいずれかに記載の金属−セラミックス接合基板。 The metal / ceramic bonding substrate according to claim 1, wherein the ceramic substrate is an aluminum nitride substrate or a silicon nitride substrate. 前記セラミックス基板の厚さが０．０５〜１．５ｍｍであることを特徴とする、請求項１乃至１６のいずれかに記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 16, wherein the ceramic substrate has a thickness of 0.05 to 1.5 mm. 前記セラミックス基板の他方の面にろう材を介して回路用金属板が接合されていることを特徴とする、請求項１乃至１７のいずれかに記載の金属−セラミックス接合基板。 The metal-ceramic bonding substrate according to any one of claims 1 to 17, wherein a circuit metal plate is bonded to the other surface of the ceramic substrate via a brazing material. 前記セラミックス基板の他方の面に前記回路用金属板を接合するためのろう材が、前記回路用金属板の周縁から０．０３ｍｍ以上はみ出ていることを特徴とする、請求項１８に記載の金属−セラミックス接合基板。 19. The metal according to claim 18, wherein a brazing material for joining the circuit metal plate to the other surface of the ceramic substrate protrudes 0.03 mm or more from a peripheral edge of the circuit metal plate. -Ceramic bonded substrate. 請求項１乃至１９のいずれかに記載の金属−セラミックス接合基板を用いた半導体回路基板またはパワーモジュール。
A semiconductor circuit board or a power module using the metal / ceramic bonding substrate according to claim 1.
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