JP2006228867A - カルコパイライト型太陽電池及びその製造方法 - Google Patents
カルコパイライト型太陽電池及びその製造方法 Download PDFInfo
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- chalcopyrite
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- 229910052951 chalcopyrite Inorganic materials 0.000 title claims abstract description 39
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 239000010445 mica Substances 0.000 claims abstract description 80
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 80
- 239000011230 binding agent Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 230000031700 light absorption Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- -1 chalcopyrite compound Chemical class 0.000 claims description 9
- 238000009499 grossing Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 26
- 230000008569 process Effects 0.000 abstract description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 8
- 239000011733 molybdenum Substances 0.000 abstract description 8
- 230000003746 surface roughness Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 147
- 239000010409 thin film Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 239000002243 precursor Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000012808 vapor phase Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000011669 selenium Substances 0.000 description 7
- 238000000224 chemical solution deposition Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003915 cell function Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】基板1としてマイカ基板又は集成マイカ基板を用いる。マイカ及び集成マイカは、高い絶縁性及び耐熱温度を有しているから、気相セレン化処理において最適な処理温度でセレン化することができ、高い変換効率を得ることができる。しかも、優れたフレキシブル性能を有しているから量産性にも対応することができる。一方、マイカ及び集成マイカの表面は、大きな表面粗度を有するため、そのままカルコパイライト系の光吸収層6を形成したのでは、リークを誘発し高い変換効率を得ることができない。そこで、本発明では、マイカ基板1とモリブデン電極5との間にセラミック系材料の中間層2及びバインダ層4を介在させる。これら中間層2及びバインダ層4を設けることにより、表面被覆性能が向上し、高い変換効率の太陽電池を実現することができる。
【選択図】 図5
Description
さらに、本発明の目的は、優れたフレキシブル性を有し、ロール・トウ・ロルプロセスの大量生産工程に適合すると共に高い変換効率が得られる太陽電池を実現することにある。
前記基板上に基板表面を平滑化又は平坦化するために形成された中間層と、
前記中間層上に形成したバインダ層と、
前記バインダ層上に形成した金属下部電極層と、
前記金属下部電極層上に形成され、カルコパイライト系材料で構成されるp型の光吸収層と、
前記光吸収層上に形成されたn型のバッファ層と、
前記バッファ層上に形成したn型の透明電極層とを備える。
マイカ又はマイカを含む材料の基板を用意し、当該基板上に基板表面を平坦化するための中間層を形成する工程と、
前記中間層上にバインダ層を形成する工程と、
前記バインダ層上に金属下部電極層を形成する工程と、
前記金属下部電極層上にカルコパイライト化合物の光吸収層を形成する工程と、
前記光吸収層の上側に透明電極層を形成する工程とを備える。
さらに、SiNもしくはSiO2 のシリコン系の平滑層を設けたことにより、セラミック系材料のコーティングされたマイカ基板の微小な粗さを平滑にし、バインダ層との密着度を向上させることが可能になる。
2…中間層
3…表面平滑層
4…バインダ層
5…金属下部電極層
6…光吸収層
7…n型バッファ層
8…高抵抗層
9…透明電極層
10…反射防止膜
11,12…引き出し電極
Claims (5)
- マイカ又はマイカを含む材料の基板と、
前記基板上に基板表面を平滑化又は平坦化するために形成された中間層と、
前記中間層上に形成したバインダ層と、
前記バインダ層上に形成した金属下部電極層と、
前記金属下部層上に形成され、カルコパイライト化合物で構成されるp型の光吸収層と、
前記光吸収層上に形成されたn型のバッファ層と、
前記バッファ層上に形成したn型の透明電極層とを備えることを特徴とするカルコパイライト型太陽電池。 - 請求項1に記載の太陽電池において、前記基板をマイカの粉体と樹脂とを混合し、圧延及び焼成工程を経て得られる集成マイカで構成したことを特徴とするカルコパイライト型太陽電池。
- 請求項1又は2に記載の太陽電池において、前記中間層をセラミック系材料の塗膜で構成し、その厚さを2μm以上20μm以下の厚さに設定したことを特徴とするカルコパイライト型太陽電池。
- 請求項1乃至請求項3の何れかに記載の太陽電池において、前記中間層とバインダ層との間に、窒化シリコン又は酸化シリコンで構成される表面平滑層が形成されていることを特徴とするカルコパイライト型太陽電池。
- マイカ又はマイカを含む材料の基板を用意し、当該基板上に基板表面を平坦化するための中間層を形成する工程と、
前記中間層上にバインダ層を形成する工程と、
前記バインダ層上に金属下部電極層を形成する工程と、
前記金属下部電極層上にカルコパイライト化合物の光吸収層を形成する工程と、
前記光吸収層の上側に透明電極層を形成する工程とを備えることを特徴とするカルコパイライト型太陽電池の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005038955A JP4969785B2 (ja) | 2005-02-16 | 2005-02-16 | カルコパイライト型太陽電池及びその製造方法 |
US11/884,485 US20090205715A1 (en) | 2005-02-16 | 2006-02-01 | Chalcopyrite Solar Cell and Manufacturing Method Thereof |
DE112006000394T DE112006000394T5 (de) | 2005-02-16 | 2006-02-01 | Chalkopyrit-Solarzelle und Verfahren zu deren Herstellung |
PCT/JP2006/301664 WO2006087914A1 (ja) | 2005-02-16 | 2006-02-01 | カルコパイライト型太陽電池及びその製造方法 |
CNB200680009974XA CN100524839C (zh) | 2005-02-16 | 2006-02-01 | 黄铜矿型太阳能电池及其制造方法 |
Applications Claiming Priority (1)
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JP2005038955A JP4969785B2 (ja) | 2005-02-16 | 2005-02-16 | カルコパイライト型太陽電池及びその製造方法 |
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Publication Number | Publication Date |
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JP2006228867A true JP2006228867A (ja) | 2006-08-31 |
JP4969785B2 JP4969785B2 (ja) | 2012-07-04 |
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JP2005038955A Active JP4969785B2 (ja) | 2005-02-16 | 2005-02-16 | カルコパイライト型太陽電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090205715A1 (ja) |
JP (1) | JP4969785B2 (ja) |
CN (1) | CN100524839C (ja) |
DE (1) | DE112006000394T5 (ja) |
WO (1) | WO2006087914A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206348A (ja) * | 2008-02-28 | 2009-09-10 | Honda Motor Co Ltd | カルコパイライト型太陽電池の製造方法 |
WO2011115292A1 (ja) | 2010-03-19 | 2011-09-22 | 国立大学法人東京工業大学 | 細孔の中に金属ナノ粒子が担持されている多孔質構造を有する太陽電池 |
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DE102009013903A1 (de) * | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Barriereschicht auf Basis von Polysilazan |
EP2412031A2 (en) * | 2009-03-25 | 2012-02-01 | Dow Global Technologies LLC | Method of forming a protective layer on thin-film photovoltaic articles and articles made with such a layer |
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Also Published As
Publication number | Publication date |
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WO2006087914A1 (ja) | 2006-08-24 |
US20090205715A1 (en) | 2009-08-20 |
CN100524839C (zh) | 2009-08-05 |
DE112006000394T5 (de) | 2007-12-27 |
JP4969785B2 (ja) | 2012-07-04 |
CN101151737A (zh) | 2008-03-26 |
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