JP2006210026A - Semiconductor device for monitoring lithium ion secondary battery - Google Patents

Semiconductor device for monitoring lithium ion secondary battery Download PDF

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JP2006210026A
JP2006210026A JP2005017569A JP2005017569A JP2006210026A JP 2006210026 A JP2006210026 A JP 2006210026A JP 2005017569 A JP2005017569 A JP 2005017569A JP 2005017569 A JP2005017569 A JP 2005017569A JP 2006210026 A JP2006210026 A JP 2006210026A
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terminal
semiconductor device
ion secondary
secondary battery
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JP4575179B2 (en
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Tsutomu Yamauchi
勉 山内
Takashi Yamaguchi
剛史 山口
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Hitachi Solutions Technology Ltd
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Hitachi ULSI Systems Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology capable of enhancing safety by setting detecting potential to potential higher than a power source voltage, detecting a charger reverse connecting state by its circuit, and immediately shutting off a current in a semiconductor device for monitoring a lithium ion secondary battery. <P>SOLUTION: A reverse connection detecting circuit 310 is equipped with a diode 401 in which an anode is connected to an IDT 311 (detecting terminal), a resister (R) 402 in which one terminal is connected to a cathode of the diode 401 and the other terminal is connected to a first power source GND, and a comparator 403 in which one input is connected to the cathode of the diode 401, the other input is connected to a second power source VCC and a detecting signal 312 is outputted, and detects the charger reverse connection state and immediately shuts off the current. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、リチウムイオン二次電池監視半導体装置に関し、特に、リチウムイオン二次電池に充電器を逆接続した際の保護回路に適用して有効な技術に関するものである。   The present invention relates to a lithium ion secondary battery monitoring semiconductor device, and more particularly to a technique that is effective when applied to a protection circuit when a charger is reversely connected to a lithium ion secondary battery.

本発明者が検討した技術として、例えば、リチウムイオン二次電池監視半導体装置においては、以下の技術が考えられる。   As a technique studied by the present inventor, for example, the following technique is conceivable in a lithium ion secondary battery monitoring semiconductor device.

現在、携帯電話機などの携帯用電子機器には、軽量、高容量、サイクル寿命の長さなどの理由から、殆どの場合にリチウムイオン二次電池（以下、単に「電池」という。）が用いられている。しかしながら、この電池は、高容量のために過充電または外部接続端子間の短絡などの状態では、膨張、発熱、発火の危険性も高い。そのため危険状態を回避するため、従来の電池監視半導体装置では、過充電電圧検出、過放電電圧検出、過電流検出の３つの保護機能を備えている。   Currently, for portable electronic devices such as mobile phones, lithium ion secondary batteries (hereinafter simply referred to as “batteries”) are used in most cases for reasons such as light weight, high capacity, and long cycle life. ing. However, since this battery has a high capacity, there is a high risk of expansion, heat generation, and ignition in a state such as overcharge or a short circuit between external connection terminals. Therefore, in order to avoid a dangerous state, the conventional battery monitoring semiconductor device has three protection functions of overcharge voltage detection, overdischarge voltage detection, and overcurrent detection.

すなわち、この電池は、充電器を用いて充電する際に、充電完了状態を過ぎても定電流で充電を継続する場合、電池電圧の上昇を招く。このような過充電状態では、電池内部の圧力上昇により電池の破損、金属リチウムの析出による電極間短絡などが発生し、発熱、更には発火の危険性がある。   That is, when the battery is charged using a charger, the battery voltage increases when charging is continued with a constant current even after the charging completion state. In such an overcharged state, there is a risk of heat generation and further ignition due to damage to the battery due to an increase in pressure inside the battery, short circuit between electrodes due to deposition of metallic lithium, and the like.

この電池の異常状態の一つとして、充電器逆接続状態がある。電池に充電器を逆接続した際の保護回路としては、例えば、特許文献１に記載された技術がある。
特開２００２−１７６７３１号公報 One of the abnormal states of this battery is a charger reverse connection state. As a protection circuit when a charger is reversely connected to a battery, for example, there is a technique described in Patent Document 1.
JP 2002-167331 A

ところで、前記のような電池監視半導体装置の技術について、本発明者が検討した結果、以下のようなことが明らかとなった。   By the way, as a result of examination of the technique of the battery monitoring semiconductor device as described above by the present inventors, the following has been clarified.

例えば、電池に充電器を逆接続した状態の時、ある端子に、ＶＣＣ電位に対してＰＮ接合の順方向電圧よりも高い電位が加わることにより、大電流が流れる。本来の半導体装置では使用しない状態であるため異常状態となり、危険性が高まる。   For example, when a battery is reversely connected to a battery, a large current flows to a certain terminal by applying a potential higher than the forward voltage of the PN junction to the VCC potential. Since the original semiconductor device is not in use, it becomes an abnormal state and the risk increases.

このような充電器逆接続状態の保護回路として、例えば、過電流検出の監視機能がこの異常状態を検出し、電流遮断を行う方法が考えられる。しかし、過電流検出の監視機能ではノイズ除去タイマ時間を持たせているので、この方法では、直ちに電流遮断を行うことができないため、安全性が劣る。   As a protection circuit for such a charger reverse connection state, for example, a method in which the overcurrent detection monitoring function detects this abnormal state and interrupts the current can be considered. However, since the overcurrent detection monitoring function has a noise elimination timer time, this method is not safe because current interruption cannot be performed immediately.

そこで、本発明の目的は、電池監視半導体装置において、電源電圧よりも高い電位に検出電位を設け、その回路により充電器逆接続状態を検出し、直ちに電流を遮断して、より安全を向上させることができる技術を提供することにある。   Accordingly, an object of the present invention is to improve safety by providing a detection potential at a potential higher than the power supply voltage in the battery monitoring semiconductor device, detecting the reverse connection state of the charger by the circuit, and immediately cutting off the current. It is to provide a technology that can.

本発明の前記並びにその他の目的と新規な特徴は、本明細書の記述及び添付図面から明らかになるであろう。   The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、次のとおりである。   Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

すなわち、本発明による電池監視半導体装置は、充電器逆接続を検出する検出回路を備え、その検出回路は、検出端子を入力とし、検出信号を出力とし、前記検出端子の電位が電源電圧の電位を超えた時に前記検出信号が反転する機能を有することを特徴とするものである。   That is, a battery monitoring semiconductor device according to the present invention includes a detection circuit that detects reverse connection of a charger, and the detection circuit has a detection terminal as an input, a detection signal as an output, and the potential of the detection terminal is a potential of a power supply voltage. It has a function of inverting the detection signal when the value exceeds.

本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば、以下のとおりである。   Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

逆接続の検出専用に回路を設け、異常な過大電流を直ちに遮断できるため、安全性の向上が可能となる。   Since a circuit is provided exclusively for detecting reverse connection and an abnormal excessive current can be immediately cut off, safety can be improved.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一部材には原則として同一の符号を付し、その繰り返しの説明は省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

図１は本発明の一実施の形態による電池監視半導体装置の全体構成を示す図、図２（ａ），（ｂ）は充電器の接続状態を示す図、図３は本実施の形態の電池監視半導体装置において、内部構成を示すブロック図、図４は図３の逆接続検出回路の構成例を示す回路図、図５は図３の逆接続検出回路の他の構成例を示す回路図である。   FIG. 1 is a diagram showing an overall configuration of a battery monitoring semiconductor device according to an embodiment of the present invention, FIGS. 2A and 2B are diagrams showing a connection state of a charger, and FIG. 3 is a battery according to the present embodiment. FIG. 4 is a block diagram showing an internal configuration of the monitoring semiconductor device, FIG. 4 is a circuit diagram showing a configuration example of the reverse connection detection circuit of FIG. 3, and FIG. 5 is a circuit diagram showing another configuration example of the reverse connection detection circuit of FIG. is there.

まず、図１により、本実施の形態による電池監視半導体装置の構成の一例を説明する。本実施の形態の電池監視半導体装置は、例えば電池監視ＩＣ１０１とされ、付加回路としてＦＥＴ（Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ：電界効果型トランジスタ）１０２，１０３、抵抗１０４，１０５，１０６などからなり、電池１０７とともに電池パック１０８を構成している。   First, an example of the configuration of the battery monitoring semiconductor device according to the present embodiment will be described with reference to FIG. The battery monitoring semiconductor device according to the present embodiment is, for example, a battery monitoring IC 101, and includes FETs (Field Effect Transistors) 102 and 103, resistors 104, 105, and 106 as additional circuits. A pack 108 is configured.

電池１０７の正（＋）極は、電池パック１０８のＰａｃｋ（＋）端子に接続され、また、抵抗１０４を介して電池監視ＩＣ１０１のＶＣＣ端子に接続される。   The positive (+) electrode of the battery 107 is connected to the Pack (+) terminal of the battery pack 108, and is connected to the VCC terminal of the battery monitoring IC 101 via the resistor 104.

電池１０７の負（−）極は、ＦＥＴ１０２のソース電極と電池監視ＩＣ１０１のＧＮＤ端子に接続される。   The negative (−) electrode of the battery 107 is connected to the source electrode of the FET 102 and the GND terminal of the battery monitoring IC 101.

ＦＥＴ１０２のドレイン電極はＦＥＴ１０３のドレイン電極に接続され、ＦＥＴ１０２のゲート電極は電池監視ＩＣ１０１のＤＣＨ端子に接続される。   The drain electrode of the FET 102 is connected to the drain electrode of the FET 103, and the gate electrode of the FET 102 is connected to the DCH terminal of the battery monitoring IC 101.

ＦＥＴ１０３のソース電極は電池パック１０８のＰａｃｋ（−）端子に接続され、また、抵抗１０５を介して電池監視ＩＣ１０１のＩＤＴ端子に接続され、ＦＥＴ１０３のゲート電極は抵抗１０６を介して電池監視ＩＣ１０１のＣＨＧ端子に接続される。   The source electrode of the FET 103 is connected to the Pack (−) terminal of the battery pack 108, is connected to the IDT terminal of the battery monitoring IC 101 via the resistor 105, and the gate electrode of the FET 103 is connected to the CHG of the battery monitoring IC 101 via the resistor 106. Connected to the terminal.

電池パック１０８のＰａｃｋ（＋）端子とＰａｃｋ（−）端子の間には、充電器もしくは負荷１０９が接続される。   A charger or a load 109 is connected between the Pack (+) terminal and the Pack (−) terminal of the battery pack 108.

電池監視ＩＣ１０１のＶＣＣ端子は正極側の電源端子、ＧＮＤ端子は負極側の電源端子である。   The VCC terminal of the battery monitoring IC 101 is a positive power supply terminal, and the GND terminal is a negative power supply terminal.

ＩＤＴ端子（検出端子）は、過電流電圧検出入力、充電過電流検出入力及びＣＨＧ出力の負（−）極側電源端子であり、放電電流が増加してＩＤＴ端子の入力電圧が過電流検出電圧（Ｖ５）、または短絡電流検知電圧（Ｖ６）を超えるとＤＣＨ出力がロウレベル（ＧＮＤ）になり、その後、入力電圧がＶ５以下になると過電流状態から復帰する。過電流検出はＧＮＤ電位に対するＩＤＴ端子電位を監視することによって行われる。   The IDT terminal (detection terminal) is an overcurrent voltage detection input, a charge overcurrent detection input, and a negative (−) pole side power supply terminal of the CHG output. The discharge current increases and the input voltage of the IDT terminal becomes the overcurrent detection voltage. When (V5) or the short-circuit current detection voltage (V6) is exceeded, the DCH output becomes low level (GND), and then, when the input voltage becomes V5 or less, the overcurrent state is restored. Overcurrent detection is performed by monitoring the IDT terminal potential with respect to the GND potential.

ＤＣＨ端子は、放電回路遮断用外付けＦＥＴ１０２の駆動信号出力であり、電池１０７の電圧が正常な時はハイレベル（ＶＣＣ）となり、過放電状態または過電流状態を検出するとロウレベル（ＧＮＤ）になる。   The DCH terminal is a drive signal output of the external FET 102 for interrupting the discharge circuit, and is at a high level (VCC) when the voltage of the battery 107 is normal, and is at a low level (GND) when an overdischarge state or an overcurrent state is detected. .

ＣＨＧ端子は、充電回路遮断用外付けＦＥＴ１０３の駆動信号出力であり、電池１０７の電圧が正常な時はハイレベル（ＶＣＣ）となり、過充電状態または過大な充電器電圧を検出するとロウレベル（ＩＤＴ）になる。   The CHG terminal is a drive signal output of the external FET 103 for interrupting the charging circuit, and is high level (VCC) when the voltage of the battery 107 is normal, and low level (IDT) when an overcharged state or an excessive charger voltage is detected. become.

図２に、充電器２０１の接続状態を示す。充電器２０１はＰａｃｋ（＋）端子とＰａｃｋ（−）端子との間に接続され、図２（ａ）は正常接続状態である。図２（ｂ）は充電器逆接続状態で、正負を逆に接続しているので異常電流が流れることになる。従来は、過電流検出機能によって異常電流を検出することにより間接的に逆接続を検出し、ノイズ除去タイマ時間後、ＦＥＴ１０２，１０３のゲート電位をコントロールすることにより電流遮断していた。本実施の形態では、ＩＤＴ端子の電位が電源電圧ＶＣＣよりも高い電位の逆接続検出回路３０１（図３〜図５により後述）を設けることにより、充電器逆接続の異常状態を直接、ＩＤＴ端子電圧で検出し、直ちに電流遮断を行う。すなわち、電源電圧よりも高い電位に検出電位を設け、異常状態を検知する。   FIG. 2 shows a connection state of the charger 201. The charger 201 is connected between the Pack (+) terminal and the Pack (−) terminal, and FIG. 2A is a normal connection state. FIG.2 (b) is a charger reverse connection state, and since the positive / negative is connected reversely, an abnormal current will flow. Conventionally, the reverse connection is indirectly detected by detecting an abnormal current by an overcurrent detection function, and the current is cut off by controlling the gate potentials of the FETs 102 and 103 after the noise elimination timer time. In the present embodiment, by providing a reverse connection detection circuit 301 (described later with reference to FIGS. 3 to 5) whose potential at the IDT terminal is higher than the power supply voltage VCC, the abnormal state of the charger reverse connection is directly connected to the IDT terminal. Detect with voltage and immediately cut off current. That is, a detection potential is provided at a potential higher than the power supply voltage, and an abnormal state is detected.

次に、図３により、電池監視ＩＣ１０１の内部構成の一例を説明する。本実施の形態による電池監視ＩＣ１０１は、例えば、逆接続検出回路３０１、制御回路３０２、駆動回路３０３、基準電圧発生回路３０４、上限電圧検出回路３０５、下限電圧検出回路３０６、発振器３０７、カウンタ３０８、充電器電圧検出回路３０９、放電電流検出回路３１０などから構成される。   Next, an example of the internal configuration of the battery monitoring IC 101 will be described with reference to FIG. The battery monitoring IC 101 according to the present embodiment includes, for example, a reverse connection detection circuit 301, a control circuit 302, a drive circuit 303, a reference voltage generation circuit 304, an upper limit voltage detection circuit 305, a lower limit voltage detection circuit 306, an oscillator 307, a counter 308, A charger voltage detection circuit 309, a discharge current detection circuit 310, and the like are included.

逆接続検出回路３０１では、ＩＤＴ端子からＩＤＴ３１１が入力し、駆動回路３０３へ検出信号３１２が出力している。また、検出信号３１２は、駆動回路３０３を介してＣＨＧ端子又はＤＣＨ端子に接続される。逆接続検出回路３０１は、ＩＤＴ３１１の電位が電源電圧ＶＣＣよりも高い電位になると、充電器逆接続の異常状態を検出し、検出信号３１２が反転する。駆動回路３０３は、検出信号３１２の反転を受けて、充電回路遮断用素子駆動信号又は放電回路遮断用素子駆動信号を反転させて、直ちに電流遮断を行う。   In the reverse connection detection circuit 301, IDT 311 is input from the IDT terminal, and a detection signal 312 is output to the drive circuit 303. The detection signal 312 is connected to the CHG terminal or DCH terminal via the drive circuit 303. When the potential of the IDT 311 becomes higher than the power supply voltage VCC, the reverse connection detection circuit 301 detects an abnormal state of reverse connection of the charger, and the detection signal 312 is inverted. Upon receiving the inversion of the detection signal 312, the drive circuit 303 inverts the charging circuit cutoff element drive signal or the discharge circuit cutoff element drive signal, and immediately cuts off the current.

次に、図４により、逆接続検出回路３０１の内部構成の一例を説明する。本実施の形態による逆接続検出回路３０１は、例えば、アノードがＩＤＴ（検出端子）３１１に接続されたダイオード４０１と、一方の端子がダイオード４０１のカソードに接続され、他方の端子が第１の電源ＧＮＤに接続された抵抗（Ｒ）４０２と、一方の入力がダイオード４０１のカソードに接続され、他方の入力が第２の電源（電源電圧）ＶＣＣに接続され、検出信号３１２を出力する比較器４０３と、などからなる。   Next, an example of the internal configuration of the reverse connection detection circuit 301 will be described with reference to FIG. In the reverse connection detection circuit 301 according to this embodiment, for example, a diode 401 whose anode is connected to an IDT (detection terminal) 311, one terminal is connected to the cathode of the diode 401, and the other terminal is a first power supply. A resistor (R) 402 connected to GND and a comparator 403 that has one input connected to the cathode of the diode 401 and the other input connected to the second power supply (power supply voltage) VCC and outputs a detection signal 312. And so on.

この逆接続検出回路３０１では、ダイオード４０１の閾値電圧をＶｔｈとすると、ＩＤＴ３１１の電位がＶＣＣ＋Ｖｔｈ以上になった時、比較器４０３の出力（検出信号３１２）が反転して、充電器逆接続の異常を検出する。   In this reverse connection detection circuit 301, assuming that the threshold voltage of the diode 401 is Vth, when the potential of the IDT 311 becomes equal to or higher than VCC + Vth, the output (detection signal 312) of the comparator 403 is inverted, and the charger reverse connection is abnormal. Is detected.

図５に、逆接続検出回路３０１の内部構成の他の一例を示す。この例による逆接続検出回路３０１は、一方の端子がＩＤＴ（検出端子）３１１に接続された第１の抵抗（Ｒ１）５０１と、一方の端子が第１の抵抗５０１の他方の端子５０６に接続され、他方の端子が第１の電源ＧＮＤに接続された第２の抵抗（Ｒ２）５０２と、一方の端子が第２の電源（電源電圧）ＶＣＣに接続された第３の抵抗（Ｒ３）５０３と、一方の端子が第３の抵抗５０３の他方の端子５０７に接続され、他方の端子が第１の電源ＧＮＤに接続された第４の抵抗（Ｒ４）５０４と、一方の入力が第１の抵抗５０１の他方の端子５０６に接続され、他方の入力が第３の抵抗５０３の他方の端子５０７に接続され、検出信号３１２を出力する比較器５０５と、などからなる。Ｒ１，Ｒ２，Ｒ３，Ｒ４の各抵抗値は、［ＩＤＴの電位］＞［ＶＣＣの電位］の条件で比較器５０５の出力（検出信号３１２）が反転するように設定する。これにより、ＩＤＴ３１１の電位がＶＣＣを超えた時、比較器４０３の出力（検出信号３１２）が反転して、充電器逆接続の異常を検出する。   FIG. 5 shows another example of the internal configuration of the reverse connection detection circuit 301. In the reverse connection detection circuit 301 according to this example, one terminal is connected to the first resistor (R1) 501 connected to the IDT (detection terminal) 311 and one terminal is connected to the other terminal 506 of the first resistor 501. A second resistor (R2) 502 having the other terminal connected to the first power supply GND, and a third resistor (R3) 503 having one terminal connected to the second power supply (power supply voltage) VCC. And a fourth resistor (R4) 504 having one terminal connected to the other terminal 507 of the third resistor 503, the other terminal connected to the first power supply GND, and one input connected to the first resistor 507. The comparator 505 is connected to the other terminal 506 of the resistor 501, the other input is connected to the other terminal 507 of the third resistor 503, and outputs the detection signal 312. The resistance values of R1, R2, R3, and R4 are set so that the output (detection signal 312) of the comparator 505 is inverted under the condition of [IDT potential]> [VCC potential]. As a result, when the potential of the IDT 311 exceeds VCC, the output of the comparator 403 (detection signal 312) is inverted, and an abnormality in the reverse connection of the charger is detected.

したがって、本実施の形態の電池監視半導体装置によれば、電源電圧よりも高い電位に検出電位を設けた検出回路により充電器逆接続状態を検出し、直ちに電流を遮断して、より安全を向上させることができる。   Therefore, according to the battery monitoring semiconductor device of the present embodiment, the reverse connection state of the charger is detected by the detection circuit having the detection potential higher than the power supply voltage, and the current is immediately cut off, thereby improving safety. Can be made.

以上、本発明者によってなされた発明をその実施の形態に基づき具体的に説明したが、本発明は前記実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることはいうまでもない。   As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

例えば、前記実施の形態においては、リチウムイオン二次電池について説明したが、これに限定されるものではなく、他の二次電池（繰返し充電可能な電池）についても適用可能である。   For example, in the above-described embodiment, the lithium ion secondary battery has been described. However, the present invention is not limited to this, and can be applied to other secondary batteries (rechargeable batteries).

本発明は、リチウムイオン二次電池監視ＩＣ、充電制御ＩＣ等について適用可能である。   The present invention is applicable to a lithium ion secondary battery monitoring IC, a charging control IC, and the like.

本発明の一実施の形態による電池監視半導体装置の全体構成を示す図である。It is a figure which shows the whole structure of the battery monitoring semiconductor device by one embodiment of this invention. （ａ），（ｂ）は、本発明の一実施の形態による電池監視半導体装置において、充電器の接続状態を示す図である。(A), (b) is a figure which shows the connection state of a charger in the battery monitoring semiconductor device by one embodiment of this invention. 本発明の一実施の形態による電池監視半導体装置において、内部構成を示すブロック図である。In the battery monitoring semiconductor device by one embodiment of this invention, it is a block diagram which shows an internal structure. 図３の逆接続検出回路の構成例を示す回路図である。FIG. 4 is a circuit diagram illustrating a configuration example of a reverse connection detection circuit in FIG. 3. 図３の逆接続検出回路の他の構成例を示す回路図である。FIG. 4 is a circuit diagram illustrating another configuration example of the reverse connection detection circuit of FIG. 3.

符号の説明Explanation of symbols

１０１ 電池監視ＩＣ
１０２，１０３ ＦＥＴ
１０４，１０５，１０６，４０２，５０１，５０２，５０３，５０４ 抵抗
１０７ 電池
１０８ 電池パック
１０９ 充電器もしくは負荷
２０１ 充電器
３０１ 逆接続検出回路
３０２ 制御回路
３０３ 駆動回路
３０４ 基準電圧発生回路
３０５ 上限電圧検出回路
３０６ 下限電圧検出回路
３０７ 発振器
３０８ カウンタ
３０９ 充電器電圧検出回路
３１０ 放電電流検出回路
３１１ ＩＤＴ
３１２ 検出信号
４０１ ダイオード
４０３，５０５ 比較器 101 Battery monitoring IC
102,103 FET
104, 105, 106, 402, 501, 502, 503, 504 Resistor 107 Battery 108 Battery pack 109 Charger or load 201 Charger 301 Reverse connection detection circuit 302 Control circuit 303 Drive circuit 304 Reference voltage generation circuit 305 Upper limit voltage detection circuit 306 Lower limit voltage detection circuit 307 Oscillator 308 Counter 309 Charger voltage detection circuit 310 Discharge current detection circuit 311 IDT
312 Detection signal 401 Diode 403, 505 Comparator

Claims (5)

充電器の逆接続状態を検出する検出回路を備えたリチウムイオン二次電池監視半導体装置であって、
前記検出回路は、検出端子を入力とし、検出信号を出力とし、前記検出端子の電位が電源電圧の電位を超えた時に前記検出信号が反転する機能を有することを特徴とするリチウムイオン二次電池監視半導体装置。 A lithium ion secondary battery monitoring semiconductor device having a detection circuit for detecting a reverse connection state of a charger,
The detection circuit has a detection terminal as an input, a detection signal as an output, and a function of inverting the detection signal when the potential of the detection terminal exceeds a potential of a power supply voltage. Monitoring semiconductor device. 請求項１記載のリチウムイオン二次電池監視半導体装置において、
前記検出回路は、
アノードが前記検出端子に接続されたダイオードと、
一方の端子が前記ダイオードのカソードに接続され、他方の端子が第１の電源に接続された抵抗と、
一方の入力が前記ダイオードのカソードに接続され、他方の入力が第２の電源に接続され、前記検出信号を出力する比較器と、を有することを特徴とするリチウムイオン二次電池監視半導体装置。 In the lithium ion secondary battery monitoring semiconductor device according to claim 1,
The detection circuit includes:
A diode having an anode connected to the detection terminal;
A resistor having one terminal connected to the cathode of the diode and the other terminal connected to a first power source;
A lithium ion secondary battery monitoring semiconductor device, comprising: a comparator having one input connected to the cathode of the diode, the other input connected to a second power supply, and outputting the detection signal. 請求項１記載のリチウムイオン二次電池監視半導体装置において、
前記検出回路は、
一方の端子が前記検出端子に接続された第１の抵抗と、
一方の端子が前記第１の抵抗の他方の端子に接続され、他方の端子が第１の電源に接続された第２の抵抗と、
一方の端子が第２の電源に接続された第３の抵抗と、
一方の端子が前記第３の抵抗の他方の端子に接続され、他方の端子が前記第１の電源に接続された第４の抵抗と、
一方の入力が前記第１の抵抗の他方の端子に接続され、他方の入力が前記第３の抵抗の他方の端子に接続され、前記検出信号を出力する比較器と、を有することを特徴とするリチウムイオン二次電池監視半導体装置。 In the lithium ion secondary battery monitoring semiconductor device according to claim 1,
The detection circuit includes:
A first resistor having one terminal connected to the detection terminal;
A second resistor having one terminal connected to the other terminal of the first resistor and the other terminal connected to a first power source;
A third resistor having one terminal connected to a second power source;
A fourth resistor having one terminal connected to the other terminal of the third resistor and the other terminal connected to the first power source;
A comparator having one input connected to the other terminal of the first resistor, the other input connected to the other terminal of the third resistor, and outputting the detection signal. Lithium ion secondary battery monitoring semiconductor device. 請求項１記載のリチウムイオン二次電池監視半導体装置において、
前記検出信号が反転した時に、直ちに、リチウムイオン二次電池と充電器との間の電流遮断を行う機能を有することを特徴とするリチウムイオン二次電池監視半導体装置。 In the lithium ion secondary battery monitoring semiconductor device according to claim 1,
A lithium ion secondary battery monitoring semiconductor device having a function of interrupting a current between a lithium ion secondary battery and a charger immediately when the detection signal is inverted. 請求項４記載のリチウムイオン二次電池監視半導体装置において、
前記検出信号が反転した時に、充電回路遮断用素子駆動信号又は放電回路遮断用素子駆動信号が反転する機能を有することを特徴とするリチウムイオン二次電池監視半導体装置。 In the lithium ion secondary battery monitoring semiconductor device according to claim 4,
A lithium-ion secondary battery monitoring semiconductor device having a function of inverting a charge circuit cutoff element drive signal or a discharge circuit cutoff element drive signal when the detection signal is inverted.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177937A (en) * 2008-01-24 2009-08-06 Seiko Instruments Inc Charge/discharge control circuit
JP2009247100A (en) * 2008-03-31 2009-10-22 Seiko Instruments Inc Charge/discharge control circuit and battery device
JP2011091901A (en) * 2009-10-20 2011-05-06 Seiko Instruments Inc Battery state monitoring circuit and battery device
KR101195716B1 (en) 2008-03-31 2012-10-29 세이코 인스트루 가부시키가이샤 Charge and discharge control circuit and battery device
KR20140108143A (en) * 2013-02-28 2014-09-05 세이코 인스트루 가부시키가이샤 Charge and discharge control circuit and battery device
JP2019079662A (en) * 2017-10-24 2019-05-23 トヨタ自動車株式会社 Initial charging method of secondary battery

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015065736A (en) * 2013-09-24 2015-04-09 日立工機株式会社 Charger

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191625A (en) * 1987-09-30 1989-04-11 Shindengen Electric Mfg Co Ltd Charge and discharge circuit of battery
JPH07184318A (en) * 1993-05-26 1995-07-21 Siliconix Inc Protective circuit for inversely connected battery
JP2001337125A (en) * 2000-05-26 2001-12-07 Aitekku:Kk Tester for serial connection type battery
JP2002191130A (en) * 2000-12-19 2002-07-05 Nec Tokin Tochigi Ltd Reverse-charge preventing circuit
JP2004113000A (en) * 1992-11-24 2004-04-08 Seiko Instruments Inc Charging/discharging control circuit and rechargeable type power supply apparatus
JP2004242441A (en) * 2003-02-06 2004-08-26 Iwatsu Electric Co Ltd Charger for secondary battery

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0191625A (en) * 1987-09-30 1989-04-11 Shindengen Electric Mfg Co Ltd Charge and discharge circuit of battery
JP2004113000A (en) * 1992-11-24 2004-04-08 Seiko Instruments Inc Charging/discharging control circuit and rechargeable type power supply apparatus
JPH07184318A (en) * 1993-05-26 1995-07-21 Siliconix Inc Protective circuit for inversely connected battery
JP2001337125A (en) * 2000-05-26 2001-12-07 Aitekku:Kk Tester for serial connection type battery
JP2002191130A (en) * 2000-12-19 2002-07-05 Nec Tokin Tochigi Ltd Reverse-charge preventing circuit
JP2004242441A (en) * 2003-02-06 2004-08-26 Iwatsu Electric Co Ltd Charger for secondary battery

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009177937A (en) * 2008-01-24 2009-08-06 Seiko Instruments Inc Charge/discharge control circuit
JP2009247100A (en) * 2008-03-31 2009-10-22 Seiko Instruments Inc Charge/discharge control circuit and battery device
US8072189B2 (en) 2008-03-31 2011-12-06 Seiko Instruments Inc. Charge and discharge control circuit and battery device
KR101195716B1 (en) 2008-03-31 2012-10-29 세이코 인스트루 가부시키가이샤 Charge and discharge control circuit and battery device
JP2011091901A (en) * 2009-10-20 2011-05-06 Seiko Instruments Inc Battery state monitoring circuit and battery device
KR101422887B1 (en) 2009-10-20 2014-07-23 세이코 인스트루 가부시키가이샤 Battery state monitoring circuit and battery device
KR20140108143A (en) * 2013-02-28 2014-09-05 세이코 인스트루 가부시키가이샤 Charge and discharge control circuit and battery device
KR102130290B1 (en) 2013-02-28 2020-07-08 에이블릭 가부시키가이샤 Charge and discharge control circuit and battery device
JP2019079662A (en) * 2017-10-24 2019-05-23 トヨタ自動車株式会社 Initial charging method of secondary battery

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