JP2006202842A5 - - Google Patents

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Publication number
JP2006202842A5
JP2006202842A5 JP2005010512A JP2005010512A JP2006202842A5 JP 2006202842 A5 JP2006202842 A5 JP 2006202842A5 JP 2005010512 A JP2005010512 A JP 2005010512A JP 2005010512 A JP2005010512 A JP 2005010512A JP 2006202842 A5 JP2006202842 A5 JP 2006202842A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005010512A
Other languages
Japanese (ja)
Other versions
JP4890765B2 (en
JP2006202842A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2005010512A priority Critical patent/JP4890765B2/en
Priority claimed from JP2005010512A external-priority patent/JP4890765B2/en
Publication of JP2006202842A publication Critical patent/JP2006202842A/en
Publication of JP2006202842A5 publication Critical patent/JP2006202842A5/ja
Application granted granted Critical
Publication of JP4890765B2 publication Critical patent/JP4890765B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2005010512A 2005-01-18 2005-01-18 Semiconductor device and manufacturing method thereof Expired - Fee Related JP4890765B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005010512A JP4890765B2 (en) 2005-01-18 2005-01-18 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005010512A JP4890765B2 (en) 2005-01-18 2005-01-18 Semiconductor device and manufacturing method thereof

Publications (3)

Publication Number Publication Date
JP2006202842A JP2006202842A (en) 2006-08-03
JP2006202842A5 true JP2006202842A5 (en) 2007-12-27
JP4890765B2 JP4890765B2 (en) 2012-03-07

Family

ID=36960593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005010512A Expired - Fee Related JP4890765B2 (en) 2005-01-18 2005-01-18 Semiconductor device and manufacturing method thereof

Country Status (1)

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JP (1) JP4890765B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010054073A2 (en) * 2008-11-05 2010-05-14 Semisouth Laboratories, Inc. Vertical junction field effect transistors having sloped sidewalls and methods of making
JP2010147405A (en) * 2008-12-22 2010-07-01 Renesas Technology Corp Semiconductor device and method of manufacturing the same
JP5607947B2 (en) * 2010-02-17 2014-10-15 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP5561343B2 (en) * 2012-11-05 2014-07-30 富士電機株式会社 Method for manufacturing silicon carbide semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2692036B2 (en) * 1995-05-22 1997-12-17 財団法人半導体研究振興会 Static induction transistor and manufacturing method thereof
JP2003069039A (en) * 2001-08-29 2003-03-07 Denso Corp Silicon carbide semiconductor device and manufacturing method thereof
JP4153811B2 (en) * 2002-03-25 2008-09-24 株式会社東芝 High breakdown voltage semiconductor device and manufacturing method thereof
JP2004134547A (en) * 2002-10-10 2004-04-30 Hitachi Ltd Semiconductor device

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