JP2006165499A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2006165499A
JP2006165499A JP2005163382A JP2005163382A JP2006165499A JP 2006165499 A JP2006165499 A JP 2006165499A JP 2005163382 A JP2005163382 A JP 2005163382A JP 2005163382 A JP2005163382 A JP 2005163382A JP 2006165499 A JP2006165499 A JP 2006165499A
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terminal
coil
case
semiconductor device
coil portion
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JP4764979B2 (en
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Hiroshi Uchiyama
拓 内山
Soichi Okita
沖田　　宗一
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Fuji Electric Co Ltd
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Fuji Electric Device Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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Abstract

<P>PROBLEM TO BE SOLVED: To freely set the arrangement positions of spring terminals in a semiconductor device using the spring terminals for control terminals led outside. <P>SOLUTION: A spring terminal 8 led outside a case 2 comprises the first coil of a small diameter with one end press-contacting with an outside control circuit board, and a second coil that is integrally, coaxially formed with the other end of the first coil and has an outside diameter larger than that of the first coil. By forming the terminal storage of a diameter smaller than the outside diameter of the second coil in the cover of the case, the control terminal is held not to disengage from the terminal storage. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、インバータ装置などの電力変換装置に使用される半導体装置に関し、特にＩＧＢＴ（Insulated Gate Bipolar Transistor）等の半導体装置における制御端子の構造に関する。   The present invention relates to a semiconductor device used for a power conversion device such as an inverter device, and more particularly to a structure of a control terminal in a semiconductor device such as an IGBT (Insulated Gate Bipolar Transistor).

汎用インバータ、無停電電源装置、工作機械、産業用ロボットなどのパワーエレクトロニクス応用装置では、半導体装置としてパワーモジュールが使用されている。このパワーモジュールは、複数のＩＧＢＴとＦＷＤ（Free Wheeling Diode）を組み合わせたパワースイッチング回路をケース内に実装したものをいう。たとえばインバータ用に使われるパワーモジュールでは、ケース外部に、主回路となる直流電力入力端子および出力端子、制御回路となる制御信号用の制御端子とを備えている。制御端子は、ケース内部において一端がＩＧＢＴの制御電極などに接続された複数のピンまたは板状のタブとこれらのピンまたはタブを保持した絶縁性の端子ブロックとから構成され、端子ブロックはケースに二次成形、接着、ねじ止めなどの方法により装着されている。また、制御端子とＩＧＢＴの制御電極との間に、ＩＧＢＴの駆動回路（ＩＣなど）を接続し、ケース内部に格納して、ＩＰＭ（Intelligent Power Module）として構成する場合もある。   In power electronics application devices such as general-purpose inverters, uninterruptible power supply devices, machine tools, and industrial robots, power modules are used as semiconductor devices. This power module is a module in which a power switching circuit combining a plurality of IGBTs and FWD (Free Wheeling Diode) is mounted in a case. For example, in a power module used for an inverter, a DC power input terminal and an output terminal serving as a main circuit and a control signal control terminal serving as a control circuit are provided outside the case. The control terminal is composed of a plurality of pins or plate-like tabs, one end of which is connected to an IGBT control electrode or the like inside the case, and an insulating terminal block holding these pins or tabs. It is mounted by methods such as secondary molding, adhesion, and screwing. In some cases, an IGBT drive circuit (IC or the like) is connected between the control terminal and the control electrode of the IGBT and stored in the case to constitute an IPM (Intelligent Power Module).

このようなパワーモジュールをユーザが使用する場合、主回路については各端子にねじ止めすることによって装置への取り付けをユーザが行う。その場合、制御回路については、制御用集積回路などを実装した基板を端子ブロックから出ているピンまたはタブに直接半田付けしたり、あるいは基板に接続または装着されたコネクタに端子ブロックから出ているピンまたはタブを挿入することによって、パワーモジュールの制御端子との接続を行っている。
このように、従来の半導体装置では、そのユーザ側によって半田付けあるいはコネクタの配置などが必要となり、配線工数および部品代に多大なコストが存在していた。そこで、このようなユーザ側でケースの外部で制御回路基板への制御端子の半田付けをなくして、製品の材料および加工のコストを低減するような構造の半導体装置が提案されている（たとえば、特許文献１参照）。 When such a power module is used by a user, the user attaches the main circuit to the device by screwing it to each terminal. In that case, for the control circuit, the board on which the control integrated circuit or the like is mounted is soldered directly to the pin or tab coming out of the terminal block, or the board connected to or attached to the board comes out of the terminal block. Connection with the control terminal of the power module is performed by inserting a pin or tab.
As described above, in the conventional semiconductor device, soldering or connector placement is required by the user side, and there is a great cost for wiring man-hours and component costs. In view of this, a semiconductor device having a structure in which the user does not solder the control terminal to the control circuit board outside the case to reduce the material of the product and the processing cost has been proposed (for example, Patent Document 1).

この半導体装置によれば、制御端子を蛇腹状ばねまたはコイルスプリングによって構成し、制御端子と外部の制御回路基板への電気的接続を半田付けによらずに、制御端子の弾性力を利用した加圧接触により行うようにしている。また、その制御端子は、樹脂ケースの側壁にインサート成形することにより樹脂ケースに保持され、樹脂ケースの側壁に集中して配置された制御端子とケース内基板との接続は、ボンディングワイヤによって接合している。
特開２００１−１４４２４９号公報（段落番号〔００２４〕〜〔００２５〕，図３） According to this semiconductor device, the control terminal is configured by a bellows-like spring or a coil spring, and the electrical connection between the control terminal and the external control circuit board is not applied by soldering, but the applied force utilizing the elastic force of the control terminal is used. This is done by pressure contact. In addition, the control terminal is held in the resin case by insert molding on the side wall of the resin case, and the connection between the control terminal and the case internal substrate that are concentrated on the side wall of the resin case is joined by a bonding wire. ing.
JP 2001-144249 A (paragraph numbers [0024] to [0025], FIG. 3)

しかしながら、従来の半導体装置では、すべての制御端子が樹脂ケースの側壁にインサート成形されていて制御端子の配置位置が樹脂ケースの外周近傍に限定されているため、たとえば半導体装置の中央に制御端子を配置して外部の制御回路基板との配線を最短距離にしたくても、ケース内基板はもちろん制御端子によって接続される外部の制御回路基板において、それらの相互接続位置から少なくとも側壁位置までは配線を引き回す必要がある。したがって、制御端子の配置位置および配線のレイアウトの自由度が低いという問題点があった。
本発明はこのような点に鑑みてなされたものであり、制御端子にスプリング端子を用いた半導体装置において、スプリング端子の配置位置を自由に設定できるようにすることを目的とする。 However, in the conventional semiconductor device, all the control terminals are insert-molded on the side wall of the resin case, and the arrangement position of the control terminals is limited to the vicinity of the outer periphery of the resin case. Even if it is arranged and the wiring to the external control circuit board is to be the shortest distance, the wiring from the interconnection position to at least the side wall position on the external control circuit board connected by the control terminal as well as the in-case board. Need to be routed. Therefore, there is a problem in that the degree of freedom in the arrangement positions of the control terminals and the layout of the wiring is low.
The present invention has been made in view of the above points, and an object of the present invention is to make it possible to freely set an arrangement position of a spring terminal in a semiconductor device using a spring terminal as a control terminal.

本発明では上記問題を解決するために、絶縁基板の回路パターンに接合されたパワー半導体素子と、前記パワー半導体素子の制御電極を外部へ導出する制御端子（スプリング端子）と、前記パワー半導体素子を収容するケースと、該ケースの開口部を覆い前記制御端子を収容するための端子収容部が形成されたカバーと、を備えた半導体装置において、前記制御端子は、前記端子収容部の端子導出口から外部へ導出される一端が外部の制御回路基板と加圧接触するコイル部と、該コイル部の他端と一体に形成されて前記コイル部と同一軸線方向に延びた直線部と、該直線部の前記コイル部と接続する側とは反対側の端部に前記直線部と一体に形成されて前記基板の回路パターンと接合する接合部とを有し、前記制御端子の前記コイル部は、一端が外部の制御回路基板と加圧接触する小径の第１コイル部と、前記第１コイル部の他端と一体に同一軸線方向に形成されて前記第１コイル部より外径の大きな第２コイル部とから構成され、前記端子収容部の端子導出口を前記第２コイル部の外径より小さな径に形成することによって、前記制御端子が前記端子収容部から離脱しないように保持されているとを特徴とする半導体装置が提供される。   In the present invention, in order to solve the above problem, a power semiconductor element bonded to a circuit pattern of an insulating substrate, a control terminal (spring terminal) for leading a control electrode of the power semiconductor element to the outside, and the power semiconductor element A semiconductor device comprising: a case for housing; and a cover that covers an opening of the case and that includes a terminal housing portion for housing the control terminal. The control terminal is a terminal lead-out port of the terminal housing portion. A coil portion having one end led out from the outside in pressure contact with an external control circuit board, a linear portion formed integrally with the other end of the coil portion and extending in the same axial direction as the coil portion, and the straight line A joint portion that is integrally formed with the linear portion and joined to the circuit pattern of the substrate at the end opposite to the side that is connected to the coil portion, and the coil portion of the control terminal is one A first coil portion having a small diameter in pressure contact with an external control circuit board, and a second coil having a larger outer diameter than the first coil portion, formed integrally with the other end of the first coil portion in the same axial direction. And the control terminal is held so as not to be detached from the terminal accommodating portion by forming the terminal outlet of the terminal accommodating portion with a diameter smaller than the outer diameter of the second coil portion. A semiconductor device is provided.

また、上記問題を解決するために、絶縁基板の回路パターンに接合されたパワー半導体素子と、前記パワー半導体素子の制御電極を外部へ導出する制御端子（スプリング端子）と、該外部端子の位置決めを行うフレームと、前記パワー半導体素子ならびにフレームを収容するケースと、を備えた半導体装置において、前記制御端子は、前記ケース外部へ導出される一端が外部の制御回路基板と加圧接触するコイル部と、該コイル部の他端と一体に形成されて前記コイル部と同一軸線方向に延びた直線部と、該直線部の前記コイル部と連続する側とは反対側の端部に、前記直線部と一体に形成されて前記基板の回路パターンと接合する接合部とを有し、前記フレームは、端子収容部を有し、該端子収容部によって前記コイル部を保持していることを特徴とする半導体装置が提供される。
このような半導体装置では、スプリング端子をフレーム、またはカバーの端子収容部によって支持する構成にしている。これにより、スプリング端子をケース側壁の内側で任意の位置に配置することができる。 In order to solve the above problem, a power semiconductor element bonded to the circuit pattern of the insulating substrate, a control terminal (spring terminal) for leading the control electrode of the power semiconductor element to the outside, and positioning of the external terminal are arranged. In a semiconductor device comprising a frame to be performed, and a case for housing the power semiconductor element and the frame, the control terminal has a coil portion whose one end led out of the case is in pressure contact with an external control circuit board The linear portion formed integrally with the other end of the coil portion and extending in the same axial direction as the coil portion, and the linear portion at the end of the linear portion opposite to the side continuous with the coil portion. And a joint portion that is joined to the circuit pattern of the substrate, and the frame has a terminal accommodating portion, and the coil accommodating portion is held by the terminal accommodating portion. The semiconductor device is provided, wherein.
In such a semiconductor device, the spring terminal is supported by the frame or the terminal accommodating portion of the cover. Thereby, a spring terminal can be arrange | positioned in arbitrary positions inside a case side wall.

本発明の半導体装置は、外部の制御回路基板との接続がスプリング端子の弾性力によって確保されるので、半田を用いないで外部の制御回路基板と電気的接続が可能になり、制御回路基板への着脱が自在、かつ容易に行える。
また、スプリング端子をケース側壁の内側で任意の位置に配置することができるので、スプリング端子によって接続される外部の制御回路基板との配線を最短距離にすることができ、配線の引き回しによる誘導雑音の影響を軽減することができるという利点がある。 In the semiconductor device of the present invention, since the connection with the external control circuit board is ensured by the elastic force of the spring terminal, electrical connection with the external control circuit board is possible without using solder. Can be attached and detached freely and easily.
In addition, since the spring terminal can be arranged at an arbitrary position inside the case side wall, the wiring with the external control circuit board connected by the spring terminal can be made the shortest distance, and the induction noise due to the routing of the wiring There is an advantage that the influence of can be reduced.

以下、本発明を半導体装置（例えばＩＧＢＴパワーモジュール）に適用した実施の形態を例に、図面を参照して詳細に説明する。
（実施の形態１）
図２は、実施の形態１に係る半導体装置における制御端子の取り付け状態を示す断面図、図３は、図２の制御端子を拡大して示す詳細図である。
ＩＧＢＴパワーモジュール１は、その外観を図１に示したように、外枠を構成するケース２内に、パワー半導体部としてＩＧＢＴ１３などの半導体素子，ケース内基板２などを組み込んでいる。ケース２の下部は後述する放熱用のベース１１に気密に接合されており、上部は開口部となってカバー７にて覆われる。直流電力入力用の端子３，４および電力出力用の端子５，６とはケース２に一体に組み込まれており、制御信号用の制御端子（以下スプリング端子８）は、カバー７に設けられた端子導出口より外部に導出されている。 Hereinafter, an embodiment in which the present invention is applied to a semiconductor device (for example, an IGBT power module) will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 2 is a cross-sectional view showing a mounting state of the control terminal in the semiconductor device according to the first embodiment, and FIG. 3 is an enlarged detailed view showing the control terminal of FIG.
As shown in FIG. 1, the IGBT power module 1 incorporates a semiconductor element such as an IGBT 13, an in-case substrate 2, and the like as a power semiconductor part in a case 2 constituting an outer frame. The lower part of the case 2 is airtightly joined to a heat dissipation base 11 which will be described later, and the upper part becomes an opening and is covered with a cover 7. The DC power input terminals 3 and 4 and the power output terminals 5 and 6 are integrated in the case 2, and a control signal control terminal (hereinafter referred to as a spring terminal 8) is provided on the cover 7. It is led out from the terminal lead-out port.

ＩＧＢＴパワーモジュール１のケース２内部には、図２に示すように、放熱用のベース１１の上に、基材にセラミックが使用され、裏面に銅板が被着されたケース内基板１２の回路パターンにはＩＧＢＴや図示しないＦＷＤなどの半導体素子が搭載されてパワー半導体部を構成する。ＩＧＢＴ１３やＦＷＤの裏面電極はケース内基板の回路パターンに接合される。ＩＧＢＴ１３やＦＷＤのおもて面に形成された電極と回路パターンとはワイヤ１４によって接続されている。パワー半導体部の制御信号電極、具体的にはＩＧＢＴ１３のゲート電極と接続された回路パターンにスプリング端子８の一端が接合されている。半田付けあるいは導電性接着剤で接合されている。ケース２の上部が開口部となっているため、回路パターンの所定箇所にスプリング端子８を配置・接合するのは容易である。スプリング端子の半田付けあるいは導電性接着剤による接合後、カバー７によってケース２の開口部を覆う。   In the case 2 of the IGBT power module 1, as shown in FIG. 2, a circuit pattern of a substrate 12 in the case in which ceramic is used as a base material and a copper plate is attached to the back surface on a base 11 for heat dissipation. Is mounted with a semiconductor element such as IGBT or FWD (not shown) to constitute a power semiconductor portion. The back electrode of the IGBT 13 or FWD is bonded to the circuit pattern on the in-case substrate. The electrode formed on the front surface of the IGBT 13 or FWD and the circuit pattern are connected by a wire 14. One end of the spring terminal 8 is joined to a circuit pattern connected to the control signal electrode of the power semiconductor portion, specifically, the gate electrode of the IGBT 13. They are joined by soldering or conductive adhesive. Since the upper portion of the case 2 is an opening, it is easy to place and join the spring terminals 8 at predetermined locations in the circuit pattern. After soldering the spring terminals or joining with a conductive adhesive, the cover 7 covers the opening of the case 2.

また、パワー半導体部の主電極、具体的にはＩＧＢＴ１３のコレクタ電極，エミッタ電極，ＦＷＤのアノード電極，カソード電極は、ケース２に設けられた対応する主端子２５（図１では符号３，４，５，６）に接続される。パワー半導体部の主電極と主端子２５との接続は、ワイヤ１４にて行う。あるいは、パワー半導体部の主電極が接続された回路パターン１２に主端子２５を接合してもよい。
ここで、半導体装置を、上記ＩＧＢＴモジュール１の内部に、ＩＧＢＴ１３の駆動回路を組み込んだＩＰＭとして構成してもよい。駆動回路は外部の制御回路基板からの制御信号を受けて、ＩＧＢＴ１３のゲート電極に駆動信号を出力するものである。ＩＰＭは、ＩＧＢＴ１３とスプリング端子８との間に駆動回路が接続されたものである。即ち、スプリング端子８が接合された回路パターンには、駆動回路の一端が接続される。ここでは、複数のスプリング端子８が、それぞれ樹脂成形部品であるカバー７に形成された端子収容部１６に収容される構造となっている。また、ケース２内の主電極２５の上部端面は、基板締結用のねじ孔９と同じ高さに位置するように構成されている。 Further, the main electrode of the power semiconductor portion, specifically, the collector electrode and emitter electrode of the IGBT 13, the anode electrode and the cathode electrode of the FWD are corresponding main terminals 25 (reference numerals 3, 4 and 4 in FIG. 1). 5, 6). The main electrode of the power semiconductor part and the main terminal 25 are connected by the wire 14. Or you may join the main terminal 25 to the circuit pattern 12 to which the main electrode of the power semiconductor part was connected.
Here, the semiconductor device may be configured as an IPM in which the drive circuit of the IGBT 13 is incorporated in the IGBT module 1. The drive circuit receives a control signal from an external control circuit board and outputs a drive signal to the gate electrode of the IGBT 13. In the IPM, a drive circuit is connected between the IGBT 13 and the spring terminal 8. That is, one end of the drive circuit is connected to the circuit pattern to which the spring terminal 8 is joined. Here, each of the plurality of spring terminals 8 is accommodated in a terminal accommodating portion 16 formed in the cover 7 which is a resin molded part. Further, the upper end surface of the main electrode 25 in the case 2 is configured to be positioned at the same height as the board fastening screw hole 9.

カバー７には、スプリング端子８が配置される位置に端子収容部１６が樹脂で一体に形成されている。スプリング端子８は、後述するように互いに外径の大きさが異なるコイル部を備えている。また、カバー７の端子収容部１６は、その端子導出口１６ａがスプリング端子８の大径のコイル部外径より小さな径に形成されている。したがって、スプリング端子８は端子収容部１６に外部の制御回路基板２６の基板接触面１７からスプリング撓み代Ａの分だけ突出した状態で、ケース２の外部に離脱しないように保持されている。
また、ケース２の内部所定の位置には、基板締結用のねじ孔９と位置決め用のピン１０がそれぞれ複数形成されている。ユーザー側では外部の制御回路基板２６をこれらの位置決め用のピン１０により位置決めした後、ねじ孔９にて基板接触面１７を基準にＩＧＢＴパワーモジュール１に締結される。このＩＧＢＴパワーモジュール１では、スプリング端子８が制御信号用の制御端子となる。スプリング端子８のコイル部は、制御回路基板２６によってスプリングセット長Ｂまで圧縮される。ここで、スプリング端子８の撓み代Ａの長さは、ケース２に設けられた基板締結用のねじ孔９の高さ、すなわち基板接触面１７の位置によって規定されることになる。これにより、ユーザ側で外部の制御回路基板をＩＧＢＴパワーモジュール１にねじ止めするだけで、スプリング端子８の通電部荷重を適切に維持することができる。また、基板締結後にスプリング端子８を介して制御回路基板２６からケース内基板１２への過剰な押圧が回避され、適正な接触状態を確保できる。また、ユーザ側における外部の制御回路基板の半田付けあるいはコネクタの配置などが不要になる。 In the cover 7, a terminal accommodating portion 16 is integrally formed of resin at a position where the spring terminal 8 is disposed. As will be described later, the spring terminal 8 includes coil portions having different outer diameters. Further, the terminal accommodating portion 16 of the cover 7 is formed such that the terminal outlet 16 a is smaller than the outer diameter of the large coil portion of the spring terminal 8. Accordingly, the spring terminal 8 is held in the terminal accommodating portion 16 so as not to be detached from the case 2 while protruding from the board contact surface 17 of the external control circuit board 26 by the amount of spring deflection A.
Further, a plurality of screw holes 9 for fastening the substrate and a plurality of positioning pins 10 are formed at predetermined positions inside the case 2. On the user side, the external control circuit board 26 is positioned by these positioning pins 10, and then fastened to the IGBT power module 1 by using the screw holes 9 with reference to the board contact surface 17. In the IGBT power module 1, the spring terminal 8 serves as a control terminal for a control signal. The coil portion of the spring terminal 8 is compressed to the spring set length B by the control circuit board 26. Here, the length of the bending allowance A of the spring terminal 8 is defined by the height of the board fastening screw hole 9 provided in the case 2, that is, the position of the board contact surface 17. Thereby, the energization part load of the spring terminal 8 can be appropriately maintained only by screwing an external control circuit board to the IGBT power module 1 on the user side. Further, after the board is fastened, excessive pressing from the control circuit board 26 to the in-case board 12 via the spring terminal 8 is avoided, and an appropriate contact state can be secured. Further, soldering of an external control circuit board on the user side or arrangement of a connector becomes unnecessary.

スプリング端子８は、図３に示すように、図の上端が外部の制御回路基板２６に直接加圧接触される接触端子面１９を有する第１コイル部２０ａと、第１コイル部２０ａの他端と一体に同一軸線方向に形成されて第１コイル部２０ａより外径の大きな第２コイル部２０ｂとからなるコイル部２０、このコイル部２０の下端に一体に形成されてコイル部２０と同一軸線方向に延びた直線部２１、およびこの直線部２１の下端部に一体に形成されてケース内基板の電極に半田付けされる半田付け部２２を有している。
スプリング端子８の第１コイル部２０ａは、端子収容部１６の端子導出口１６ａに収容され、第２コイル部２０ｂは、カバー７に形成された開口部７ａに収容されている。端子導出口１６ａと開口部７ａとは同一軸線上に形成され、開口部７ａの直径が端子導出口１６ａより大きいために、その接続面には段差１６ｂが形成される。したがって、外部の制御回路基板２６がＩＧＢＴパワーモジュール１のケース２に締結されたときには、スプリング端子８のコイル部２０が撓む。これにより、スプリング端子８の接触端子面１９は、適正なばね力によって外部の制御回路基板２６側に配置された回路に加圧接触されて、その導通性が確保できる。 As shown in FIG. 3, the spring terminal 8 includes a first coil portion 20 a having a contact terminal surface 19 whose upper end in the drawing is in direct pressure contact with an external control circuit board 26, and the other end of the first coil portion 20 a. And a coil portion 20 formed of the second coil portion 20b having a larger outer diameter than the first coil portion 20a. The coil portion 20 is integrally formed at the lower end of the coil portion 20 and has the same axis as the coil portion 20. A linear portion 21 extending in the direction, and a soldering portion 22 formed integrally with the lower end portion of the linear portion 21 and soldered to the electrode of the in-case substrate.
The first coil portion 20 a of the spring terminal 8 is accommodated in the terminal outlet 16 a of the terminal accommodating portion 16, and the second coil portion 20 b is accommodated in the opening 7 a formed in the cover 7. The terminal outlet 16a and the opening 7a are formed on the same axis, and since the diameter of the opening 7a is larger than the terminal outlet 16a, a step 16b is formed on the connection surface. Therefore, when the external control circuit board 26 is fastened to the case 2 of the IGBT power module 1, the coil portion 20 of the spring terminal 8 bends. Thereby, the contact terminal surface 19 of the spring terminal 8 is press-contacted with the circuit arrange | positioned at the external control circuit board 26 side by appropriate spring force, and the electrical conductivity can be ensured.

なお、スプリング端子８の接触端子面１９と反対側は、ケース内基板１２にて導通を確保するための直線形状の直線部２１によって構成されている。この直線部２１は、ケース内基板１２までの距離の長さを有し、ケース内基板１２の電極上で半田付け部２２が半田付けにて接合される。
ここで、外部の制御回路基板２６は通常、ユーザ側で用意されるため、スプリング端子８のコイル部２０はカバー７の外側にスプリング撓み代Ａの分だけ突出した状態で取り扱われる。そのため、従来のＩＧＢＴパワーモジュール１では、そのハンドリング時、あるいは制御回路基板２６の装着作業時に、スプリング端子８の接触端子面１９が引っ張られて応力が生じるため、その半田付け部２２とケース内基板１２との固着状態に不具合が発生するおそれがあった。 The side opposite to the contact terminal surface 19 of the spring terminal 8 is constituted by a linear portion 21 having a linear shape for ensuring conduction in the in-case substrate 12. The straight line portion 21 has a distance to the in-case substrate 12, and the soldering portion 22 is joined to the electrodes of the in-case substrate 12 by soldering.
Here, since the external control circuit board 26 is normally prepared on the user side, the coil portion 20 of the spring terminal 8 is handled in a state where the coil portion 20 of the spring terminal 8 protrudes by the amount of spring deflection A. Therefore, in the conventional IGBT power module 1, since the contact terminal surface 19 of the spring terminal 8 is pulled and stress is generated during the handling or the mounting operation of the control circuit board 26, the soldering portion 22 and the in-case board There was a possibility that a problem would occur in the state of fixing with No. 12.

実施の形態１では、カバー７とそこに形成された端子収容部１６との接合面に段差１６ｂが形成され、第２コイル部２０ｂによってスプリング端子８がケース２の外部に離脱しない。そのため、スプリング端子８の接触端子面１９が引っ張られた場合でもケース内基板１２との固着状態に影響を及ぼさない効果がある。
また、スプリング端子８と前記基板の回路パターンとを半田もしくは導電性接着剤にて接合する部分において、スプリング端子が半田もしくは導電性接着剤にて覆われる個所に異形部を形成する。異形部は、スプリング端子の直線部の終端を変形させたものであればよく、Ｌ字状，円弧状などでもよいし、終端を押しつぶした形状でもよい。このように、直線形状以外の形状として構成すると、接合部分に引っ張る力が印加された場合であっても、スプリング端子８が抜けにくくなり、ケース内基板１２との良好な固着状態を維持できる。 In the first embodiment, a step 16b is formed on the joint surface between the cover 7 and the terminal accommodating portion 16 formed therein, and the spring terminal 8 is not detached from the case 2 by the second coil portion 20b. Therefore, even when the contact terminal surface 19 of the spring terminal 8 is pulled, there is an effect that does not affect the fixing state with the in-case substrate 12.
Further, in the portion where the spring terminal 8 and the circuit pattern of the substrate are joined with solder or a conductive adhesive, a deformed portion is formed where the spring terminal is covered with the solder or the conductive adhesive. The deformed portion may be a deformed end portion of the straight portion of the spring terminal, and may be an L shape, an arc shape, or a shape in which the end portion is crushed. As described above, when configured as a shape other than the linear shape, even when a pulling force is applied to the joint portion, the spring terminal 8 is difficult to come off, and a good fixed state with the in-case substrate 12 can be maintained.

なお、スプリング端子８とケース内基板１２とを半田付け接合する場合には、二百数十℃の加熱が必要であって、スプリング端子８が熱履歴を受けることによって焼鈍した状態となってしまう場合がある。一方、熱硬化型の導電性接着剤を使用すれば、その硬化のための加熱温度は百数十℃でよい。したがって、熱硬化型の導電性接着剤は高温の加熱処理が不要であるために、スプリング端子８の本来のばね性が失われるおそれがない点で有利である。
（実施の形態２）
図１は本発明による半導体装置としてのＩＧＢＴパワーモジュールの外観を示す平面図、図４は実施の形態２に係る半導体装置における制御端子の取り付け状態を示す断面図、図５は図４の制御端子を示す詳細図、図６は図４のａ−ａ矢視断面図である。 In addition, when soldering and joining the spring terminal 8 and the substrate 12 in the case, heating at two hundred and several tens of degrees Celsius is necessary, and the spring terminal 8 is in an annealed state by receiving a thermal history. There is a case. On the other hand, if a thermosetting conductive adhesive is used, the heating temperature for curing may be several hundreds of degrees Celsius. Therefore, the thermosetting conductive adhesive does not require high-temperature heat treatment, and is advantageous in that the original spring property of the spring terminal 8 is not lost.
(Embodiment 2)
FIG. 1 is a plan view showing an external appearance of an IGBT power module as a semiconductor device according to the present invention, FIG. 4 is a cross-sectional view showing a mounting state of a control terminal in a semiconductor device according to Embodiment 2, and FIG. 5 is a control terminal of FIG. FIG. 6 is a cross-sectional view taken along the line aa in FIG.

ＩＧＢＴパワーモジュール１は、その外観を図１に示したように、外枠を構成するケース２内に、パワー半導体部としてＩＧＢＴ１３などの半導体素子，ケース内基板２などを組み込んでいる。ケース２の下部は前述のとおり放熱用のベース１１に気密に接合座さており、上部は開口部となって、カバー７にて覆われる。直流電力入力用の端子３，４および電力出力用の端子５，６は、ケース２に一体に組み込まれており、スプリング端子８はカバー７（端子導出口）を貫通して外部に導出されている。また、ケース２はねじ孔９およびピン１０を備えている。そして、ユーザ側では、カバー７に一体に設けられたピン１０によって、ＩＧＢＴパワーモジュール１の外部で制御回路基板の位置決めが行われるとともに、その制御回路基板がねじ孔９に締結される。このＩＧＢＴパワーモジュール１では、スプリング端子８が制御信号用の制御端子となるので、ユーザ側で外部の制御回路基板をＩＧＢＴパワーモジュール１にねじ止めするだけで、スプリング端子８の通電部荷重を適切に維持することができる。また、ユーザ側における外部の制御回路基板の半田付けあるいはコネクタの配置などが不要になる。   As shown in FIG. 1, the IGBT power module 1 incorporates a semiconductor element such as an IGBT 13, an in-case substrate 2, and the like as a power semiconductor part in a case 2 constituting an outer frame. The lower part of the case 2 is airtightly joined to the heat dissipation base 11 as described above, and the upper part becomes an opening and is covered with the cover 7. The DC power input terminals 3 and 4 and the power output terminals 5 and 6 are integrated into the case 2, and the spring terminal 8 is led out through the cover 7 (terminal outlet). Yes. The case 2 includes a screw hole 9 and a pin 10. On the user side, the control circuit board is positioned outside the IGBT power module 1 by the pin 10 provided integrally with the cover 7, and the control circuit board is fastened to the screw hole 9. In this IGBT power module 1, since the spring terminal 8 serves as a control terminal for control signals, the load on the current-carrying portion of the spring terminal 8 can be appropriately set by simply screwing an external control circuit board to the IGBT power module 1 on the user side. Can be maintained. Also, soldering of an external control circuit board on the user side or connector arrangement is not necessary.

ＩＧＢＴパワーモジュール１の内部は、図４に示したように、放熱用のベース１１を備え、その上には、基材にセラミックを使用し、裏面に銅板が被着されたケース内基板１２のおもて面には、回路パターンが形成されている。ケース内基板１２の回路パターンにはＩＧＢＴ１３やＦＷＤ（図示せず）などの半導体素子が搭載されてパワー半導体部を構成する。ＩＧＢＴ１３やＦＷＤの裏面に形成された電極がケース内基板の回路パターンに接合されるとともに、おもて面に形成された電極と回路パターンとはワイヤ１４によって接続されている。パワー半導体部の制御信号電極、具体的にはＩＧＢＴ１３のゲート端子と接続された回路パターンにスプリング端子８の一端が半田付けあるいは導電性接着剤で接合されている。ここで、半導体装置をＩＧＢＴパワーモジュール１の内部に、ＩＧＢＴ１３の駆動回路を組み込んだＩＰＭとして構成してもよい。駆動回路は外部の制御回路基板からの制御信号を受けてＩＧＢＴ１３のゲートに駆動信号を出力するものである。ＩＰＭは、ＩＧＢＴ１３とスプリング端子８との間に駆動回路が接続されたものである。即ち、スプリング端子８が半田付けされた回路パターンには、駆動回路の一端が接続される。   As shown in FIG. 4, the inside of the IGBT power module 1 includes a base 11 for heat dissipation, on which a ceramic is used as a base material, and a copper plate is attached to the back surface of the in-case substrate 12. A circuit pattern is formed on the front surface. A semiconductor element such as IGBT 13 or FWD (not shown) is mounted on the circuit pattern of the in-case substrate 12 to constitute a power semiconductor portion. The electrodes formed on the back surface of the IGBT 13 or FWD are bonded to the circuit pattern on the in-case substrate, and the electrodes formed on the front surface and the circuit pattern are connected by a wire 14. One end of the spring terminal 8 is joined to the circuit pattern connected to the control signal electrode of the power semiconductor part, specifically, the gate terminal of the IGBT 13 by soldering or a conductive adhesive. Here, the semiconductor device may be configured as an IPM in which the drive circuit of the IGBT 13 is incorporated in the IGBT power module 1. The drive circuit receives a control signal from an external control circuit board and outputs a drive signal to the gate of the IGBT 13. In the IPM, a drive circuit is connected between the IGBT 13 and the spring terminal 8. That is, one end of the drive circuit is connected to the circuit pattern to which the spring terminal 8 is soldered.

カバー７の内側には、フレーム１５が配置されており、そのフレーム１５は、スプリング端子８が配置される位置に端子収容部１６が樹脂で一体に形成されている。スプリング端子８は、フレーム１５の端子収容部１６に外部の制御回路基板の基板接触面１７からスプリング撓み代Ａの分だけ突出した状態で保持されている。したがって、図示しない外部の制御回路基板が位置決め用のピン１０により位置決めされた後、基板締結用のねじ孔９にて基板接触面１７を基準にＩＧＢＴパワーモジュール１に締結されたときには、外部の制御回路基板によってスプリングセット長Ｂまで圧縮される。
ここで、制御回路基板の基板接触面１７は、フレーム１５の端子収容部１６の高い位置であればよく、必ずしも一致していなくてもよい。また、スプリング端子８の撓み代Ａの長さは、ケース２に設けられた基板締結用のねじ孔９の高さ、すなわち基板接触面１７位置によって規定されている。これにより、スプリング端子８を介して制御回路基板からフレーム１５への過剰な押圧が回避される。 A frame 15 is disposed inside the cover 7, and the frame 15 has a terminal housing portion 16 integrally formed of resin at a position where the spring terminal 8 is disposed. The spring terminal 8 is held in the terminal accommodating portion 16 of the frame 15 in a state protruding from the board contact surface 17 of the external control circuit board by the amount of spring deflection A. Accordingly, when an external control circuit board (not shown) is positioned by the positioning pins 10 and then fastened to the IGBT power module 1 with the board contact surface 17 as a reference by the board fastening screw hole 9, external control is performed. It is compressed to the spring set length B by the circuit board.
Here, the board contact surface 17 of the control circuit board need only be at a high position of the terminal accommodating portion 16 of the frame 15 and does not necessarily have to coincide. The length of the bending allowance A of the spring terminal 8 is defined by the height of the board fastening screw hole 9 provided in the case 2, that is, the position of the board contact surface 17. Thereby, excessive pressing from the control circuit board to the frame 15 via the spring terminal 8 is avoided.

フレーム１５は、また、全体的にはたとえば格子状に形成されていて、多数の開口部１８を有している。これら開口部１８は、フレーム１５をケース内に設置した状態でスプリング端子８とケース内基板１２に搭載された駆動回路の制御信号用の電極との接合部へのアクセスを可能にするものである。即ち、開口部１８から半田ごて，ホットガス，紫外線などのアクセスを可能とするものであり、半田や導電性接着剤による接合を可能とするものである。
スプリング端子８は、図５に示したように、図の上端が外部の制御回路基板に直接加圧接触される接触端子面１９を有するコイル部２０と、このコイル部２０の下端に一体に形成されてコイル部２０と同一軸線方向に延びた直線部２１と、この直線部２１の下端部に一体に形成されてケース内基板の電極に半田付けされる半田付け部２２とを有している。 The frame 15 is also formed, for example, in a lattice shape as a whole and has a large number of openings 18. These openings 18 allow access to the joints between the spring terminals 8 and the control signal electrodes of the drive circuit mounted on the in-case substrate 12 with the frame 15 installed in the case. . That is, the soldering iron, hot gas, ultraviolet light, and the like can be accessed from the opening 18, and joining by solder or a conductive adhesive is possible.
As shown in FIG. 5, the spring terminal 8 is formed integrally with a coil part 20 having a contact terminal surface 19 whose upper end is directly pressed against an external control circuit board, and a lower end of the coil part 20. The straight portion 21 extending in the same axial direction as the coil portion 20 and the soldering portion 22 that is integrally formed at the lower end portion of the straight portion 21 and is soldered to the electrode of the in-case substrate. .

スプリング端子８のコイル部２０が収容されるフレーム１５の端子収容部１６は、コイル部２０の下端部が当接されるテーパ形状のスプリング端子受圧部２３を有している。したがって、外部の制御回路基板がＩＧＢＴパワーモジュール１に締結されたときには、スプリング端子８のコイル部２０は、そのスプリング端子受圧部２３を基準に撓むことにより、外部の制御回路基板側に配置された回路に接触端子面１９が適正なばね力によって加圧接触され、導通性が確保される。
また、スプリング端子８の接触端子面１９と反対の側は、ケース内基板１２にて導通を確保するための直線形状の直線部２１によって構成されている。この直線部２１は、ケー
ス内基板１２までの距離の長さを有し、ケース内基板１２の電極上で半田付けにて接合される。また、この直線部２１は、スプリング端子８をフレーム１５の端子収容部１６に挿入する際の回転方向をなくすために、コイル部２０と同一軸線上に配置している。そして、半田付け部２２は、耐熱疲労性を考慮して、接合面積を稼ぐために、リング状の構造にしている。 The terminal accommodating portion 16 of the frame 15 in which the coil portion 20 of the spring terminal 8 is accommodated has a tapered spring terminal pressure receiving portion 23 with which the lower end portion of the coil portion 20 abuts. Therefore, when the external control circuit board is fastened to the IGBT power module 1, the coil part 20 of the spring terminal 8 is arranged on the external control circuit board side by bending with respect to the spring terminal pressure receiving part 23. The contact terminal surface 19 is brought into pressure contact with an appropriate circuit by an appropriate spring force, and electrical conductivity is ensured.
Further, the side of the spring terminal 8 opposite to the contact terminal surface 19 is constituted by a linear portion 21 having a linear shape for ensuring conduction in the in-case substrate 12. The straight portion 21 has a length that is a distance to the in-case substrate 12 and is joined to the electrodes of the in-case substrate 12 by soldering. Further, the linear portion 21 is disposed on the same axis as the coil portion 20 in order to eliminate the rotation direction when the spring terminal 8 is inserted into the terminal accommodating portion 16 of the frame 15. And the soldering part 22 is made into the ring-shaped structure in order to earn a joining area in consideration of heat fatigue resistance.

ここで、スプリング端子８の半田付け部２２がケース内基板１２の電極に接合されると、スプリング端子受圧部２３とケース内基板１２の電極との間には、スプリング端子８の直線部２１が配置されていることになる。しかも、その直線部２１の一端は、ケース内基板１２の電極に半田接合により固定され、他端はスプリング端子受圧部２３によって拘束された状態になっている。
ところが、ＩＧＢＴパワーモジュール１は、ケース内基板１２の絶縁材料として基材に耐熱性のセラミックを適用しているため、これが半田付けされているベース１１とは線膨張率が異なっている。そのため、ＩＧＢＴパワーモジュール１が動作しているときに発熱すると、半田接合された両者の線膨張率の差によってベース１１に反りが発生する。このベース１１に反りが発生すると、スプリング端子８の半田付け部２２と端子収容部１６のスプリング端子受圧部２３との位置に相対変位が発生し、スプリング端子８の直線部２１と半田付け部２２とに応力が発生する。特に、ベース１１の中央付近に配置されたスプリング端子８については、相対変位が大きく、場合によっては、数百μｍもの変位となり、スプリング端子８の半田付け部２２に大きな応力が発生してしまい、信頼性の低下につながる。 Here, when the soldering portion 22 of the spring terminal 8 is joined to the electrode of the in-case substrate 12, the linear portion 21 of the spring terminal 8 is interposed between the spring terminal pressure receiving portion 23 and the electrode of the in-case substrate 12. Will be placed. Moreover, one end of the linear portion 21 is fixed to the electrode of the in-case substrate 12 by solder bonding, and the other end is constrained by the spring terminal pressure receiving portion 23.
However, since the IGBT power module 1 uses a heat-resistant ceramic as a base material as an insulating material of the in-case substrate 12, the linear expansion coefficient is different from that of the base 11 to which this is soldered. For this reason, when the IGBT power module 1 is operating and generates heat, the base 11 is warped due to the difference in coefficient of linear expansion between the two soldered. When warping occurs in the base 11, relative displacement occurs between the soldering portion 22 of the spring terminal 8 and the spring terminal pressure receiving portion 23 of the terminal accommodating portion 16, and the linear portion 21 and the soldering portion 22 of the spring terminal 8. Stress is generated. In particular, the spring terminal 8 disposed near the center of the base 11 has a large relative displacement, and in some cases, a displacement of several hundred μm, and a large stress is generated in the soldering portion 22 of the spring terminal 8, This leads to a decrease in reliability.

そのような繰り返し起きる熱サイクルにより発生する半田付け部２２への応力に対しては、スプリング端子受圧部２３をテーパ形状にすることによって解消している。すなわち、スプリング端子受圧部２３をテーパ形状にしていることにより、スプリング端子８のコイル部２０は、その外周部のみがスプリング端子受圧部２３によって支持されていることになる。コイル部２０と直線部２１との間には、図６に示したように、これらを接続する接続部位２４があるが、この接続部位２４のばね性が半田付け部２２の接合部とスプリング端子受圧部２３との間に発生する相対変位を吸収するため、半田付け部２２の接合部にかかる応力を緩和することができる。
なお、上記の実施の形態では、接続部位２４が直線部２１の軸線方向に変形できるようにするため、スプリング端子受圧部２３をテーパ形状に形成した場合を例にして説明したが、スプリング端子８のコイル部２０は、その外周部のみがスプリング端子受圧部２３によって支持されていればよいので、スプリング端子受圧部２３は、コイル部２０の外周部のみ支持するような段差形状に形成するようにしても良い。 The stress on the soldering portion 22 generated by such repeated thermal cycles is eliminated by making the spring terminal pressure receiving portion 23 into a tapered shape. That is, since the spring terminal pressure receiving portion 23 is tapered, only the outer peripheral portion of the coil portion 20 of the spring terminal 8 is supported by the spring terminal pressure receiving portion 23. As shown in FIG. 6, there is a connection part 24 for connecting them between the coil part 20 and the straight part 21, and the spring property of this connection part 24 depends on the joint part of the soldering part 22 and the spring terminal. Since the relative displacement generated between the pressure receiving portion 23 and the pressure receiving portion 23 is absorbed, the stress applied to the joint portion of the soldering portion 22 can be relaxed.
In the above-described embodiment, the case where the spring terminal pressure receiving portion 23 is formed in a tapered shape has been described as an example in order to allow the connecting portion 24 to be deformed in the axial direction of the straight portion 21. Since only the outer peripheral portion of the coil portion 20 needs to be supported by the spring terminal pressure receiving portion 23, the spring terminal pressure receiving portion 23 is formed in a stepped shape so as to support only the outer peripheral portion of the coil portion 20. May be.

図７は、図３の制御端子をフレームによって位置決めした状態を示す詳細図である。
フレーム１５は、スプリング端子８の位置決めを行うものであって、実施の形態２のものと同様に、全体的にはたとえば格子状に形成されていて、多数の開口部を有している。これら開口部は、フレーム１５をケース内に設置した状態でスプリング端子８とケース内基板１２に搭載された駆動回路の制御信号用の電極との接合部へのアクセスを可能にするものである。即ち、開口部１８から半田ごて、またはホットガス，紫外線などのアクセスを可能とするものであり、半田や導電性接着剤による接合を可能とするものである。
このフレーム１５のテーパ形状のスプリング端子受圧部２３に、スプリング端子８の第２コイル部２０ｂの下端部が当接され、ケース２に外部の制御回路基盤２６を締結したときにコイル部２０の撓みの基準となる。 FIG. 7 is a detailed view showing a state in which the control terminal of FIG. 3 is positioned by the frame.
The frame 15 is used to position the spring terminal 8 and, like the second embodiment, is entirely formed in a lattice shape, for example, and has a large number of openings. These openings allow access to the joint between the spring terminal 8 and the control signal electrode of the drive circuit mounted on the in-case substrate 12 with the frame 15 installed in the case. That is, a soldering iron, hot gas, ultraviolet light, or the like can be accessed from the opening 18, and joining by solder or a conductive adhesive is possible.
The lower end portion of the second coil portion 20b of the spring terminal 8 is brought into contact with the tapered spring terminal pressure receiving portion 23 of the frame 15, and the coil portion 20 is bent when the external control circuit base 26 is fastened to the case 2. It becomes the standard.

したがって、上述した熱サイクルにより発生する半田付け部２２への応力に対して、スプリング端子受圧部２３をテーパ形状にすることによって解消できる。
なお、上記の各例において、半田や導電性接着剤により接合した部分は、ろう材など他の接合材、あるいは他の接合方法に置き換えることが可能である。 Therefore, the spring terminal pressure receiving portion 23 can be eliminated with respect to the stress on the soldering portion 22 generated by the above-described thermal cycle.
In each of the above examples, the portion joined by solder or a conductive adhesive can be replaced with another joining material such as a brazing material or another joining method.

本発明による半導体装置の外観を示す平面図である。It is a top view which shows the external appearance of the semiconductor device by this invention. 実施の形態１に係る半導体装置における制御端子の取り付け状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state where a control terminal is attached in the semiconductor device according to the first embodiment. 図２の制御端子を拡大して示す詳細図である。FIG. 3 is an enlarged detailed view showing a control terminal of FIG. 2. 実施の形態２に係る半導体装置における制御端子の取り付け状態を示す断面図である。FIG. 10 is a cross-sectional view showing a state where a control terminal is attached in the semiconductor device according to the second embodiment. 図４の制御端子を拡大して示す詳細図である。FIG. 5 is an enlarged detailed view showing a control terminal of FIG. 4. 図５のａ−ａ矢視断面図である。FIG. 6 is a cross-sectional view taken along the line aa in FIG. 5. 図３の制御端子がさらにフレームによって位置決めされた状態を示す詳細図である。FIG. 4 is a detailed view showing a state where the control terminal of FIG. 3 is further positioned by a frame.

符号の説明Explanation of symbols

１ ＩＧＢＴパワーモジュール
２ ケース
３，４，５，６ 端子
７ カバー
７ａ 開口部
８ スプリング端子
９ ねじ孔
１０ ピン
１１ ベース
１２ ケース内基板
１３ ＩＧＢＴ
１４ ワイヤ
１５ フレーム
１６ 端子収容部
１６ａ 端子導出口
１６ｂ 段差
１７ 基板接触面
１８ 開口部
１９ 接触端子面
２０ コイル部
２０ａ 第１コイル部
２０ｂ 第２コイル部
２１ 直線部
２２ 半田付け部
２３ スプリング端子受圧部
２４ 接続部位
２５ 主電極
２６ 制御回路基板 DESCRIPTION OF SYMBOLS 1 IGBT power module 2 Case 3, 4, 5, 6 Terminal 7 Cover 7a Opening 8 Spring terminal 9 Screw hole 10 Pin 11 Base 12 Case substrate 13 IGBT
14 Wire 15 Frame 16 Terminal accommodating portion 16a Terminal outlet 16b Step 17 Substrate contact surface 18 Opening portion 19 Contact terminal surface 20 Coil portion 20a First coil portion 20b Second coil portion 21 Linear portion 22 Soldering portion 23 Spring terminal pressure receiving portion 24 connection part 25 main electrode 26 control circuit board

Claims (7)

絶縁基板の回路パターンに接合されたパワー半導体素子と、前記パワー半導体素子の制御電極を外部へ導出する制御端子と、前記パワー半導体素子を収容するケースと、該ケースの開口部を覆い前記制御端子を収容するための端子収容部が形成されたカバーと、を備えた半導体装置において、
前記制御端子は、前記端子収容部の端子導出口から外部へ導出される一端が外部の制御回路基板と加圧接触するコイル部と、該コイル部の他端と一体に形成されて前記コイル部と同一軸線方向に延びた直線部と、該直線部の前記コイル部と接続する側とは反対側の端部に前記直線部と一体に形成されて前記基板の回路パターンと接合する接合部とを有し、
前記制御端子の前記コイル部は、一端が外部の制御回路基板と加圧接触する小径の第１コイル部と、前記第１コイル部の他端と一体に同一軸線方向に形成されて前記第１コイル部より外径の大きな第２コイル部とから構成され、
前記端子収容部の端子導出口を前記第２コイル部の外径より小さな径に形成することによって、前記制御端子が前記端子収容部から離脱しないように保持されていることを特徴とする半導体装置。 A power semiconductor element bonded to a circuit pattern of an insulating substrate; a control terminal for leading out a control electrode of the power semiconductor element; a case for housing the power semiconductor element; and the control terminal covering an opening of the case In a semiconductor device provided with a cover in which a terminal accommodating portion for accommodating
The control terminal is formed integrally with a coil part whose one end led out from the terminal lead-out port of the terminal accommodating part is in pressure contact with an external control circuit board, and the other end of the coil part. A linear portion that extends in the same axial direction as the linear portion, and a joint portion that is integrally formed with the linear portion at the end of the linear portion that is opposite to the side that is connected to the coil portion, and that is joined to the circuit pattern of the substrate. Have
The coil portion of the control terminal is formed in the same axial direction integrally with the first coil portion having a small diameter, one end of which is in pressure contact with an external control circuit board, and the other end of the first coil portion. A second coil portion having a larger outer diameter than the coil portion,
The semiconductor device is characterized in that the control terminal is held so as not to be detached from the terminal accommodating portion by forming a terminal outlet of the terminal accommodating portion with a diameter smaller than the outer diameter of the second coil portion. . 前記制御端子の接合部は、前記基板の回路パターンに半田もしくは導電性接着剤にて接合され、前記半田もしくは導電性接着剤にて覆われる個所に異形部が形成されていることを特徴とする請求項１記載の半導体装置。   The joint portion of the control terminal is joined to the circuit pattern of the substrate with solder or a conductive adhesive, and a deformed portion is formed at a place covered with the solder or the conductive adhesive. The semiconductor device according to claim 1. 前記ケース内に、端子収容部を有し該端子収容部によって前記コイル部を保持するとともに、前記制御端子の位置決めを行うフレームを備えていることを特徴とする請求項２記載の半導体装置。   3. The semiconductor device according to claim 2, further comprising: a frame that has a terminal accommodating portion in the case, holds the coil portion by the terminal accommodating portion, and positions the control terminal. 絶縁基板の回路パターンに接合されたパワー半導体素子と、前記パワー半導体素子の制御電極を外部へ導出する制御端子と、該制御端子の位置決めを行うフレームと、前記パワー半導体素子ならびにフレームを収容するケースと、を備えた半導体装置において、
前記制御端子は、前記ケース外部へ導出される一端が外部の制御回路基板と加圧接触するコイル部と、該コイル部の他端と一体に形成されて前記コイル部と同一軸線方向に延びた直線部と、該直線部の前記コイル部と連続する側とは反対側の端部に、前記直線部と一体に形成されて前記基板の回路パターンと接合する接合部とを有し、
前記フレームは、端子収容部を有し、該端子収容部によって前記コイル部を保持していることを特徴とする半導体装置。 A power semiconductor element bonded to a circuit pattern of an insulating substrate, a control terminal for leading a control electrode of the power semiconductor element to the outside, a frame for positioning the control terminal, and a case for housing the power semiconductor element and the frame In a semiconductor device comprising:
The control terminal is formed integrally with a coil portion whose one end led out of the case is in pressure contact with an external control circuit board, and the other end of the coil portion, and extends in the same axial direction as the coil portion. A linear portion, and a joint portion formed integrally with the linear portion and joined to the circuit pattern of the substrate at an end portion of the linear portion opposite to the side continuous with the coil portion;
The frame includes a terminal housing portion, and the coil portion is held by the terminal housing portion. 前記制御端子の接合部は、前記基板の回路パターンに半田もしくは導電性接着剤にて接合されることを特徴とする請求項４記載の半導体装置。   5. The semiconductor device according to claim 4, wherein the joint portion of the control terminal is joined to the circuit pattern of the substrate with solder or a conductive adhesive. 前記フレームの端子収容部は、前記ケースと前記外部の制御回路基板とを締結したときに前記コイル部の撓みの基準となるスプリング端子受圧部を備え、前記制御端子の前記コイル部における撓み応力を前記スプリング端子受圧部で支持していることを特徴とする請求項３または４に記載の半導体装置。   The terminal accommodating portion of the frame includes a spring terminal pressure receiving portion that serves as a reference for bending of the coil portion when the case and the external control circuit board are fastened, and the bending stress in the coil portion of the control terminal is measured. The semiconductor device according to claim 3, wherein the semiconductor device is supported by the spring terminal pressure receiving portion. 前記端子受圧部は、テーパ形状に形成されていることを特徴とする請求項６記載の半導体装置。   The semiconductor device according to claim 6, wherein the terminal pressure receiving portion is formed in a tapered shape.
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