JP2006156799A - Solid-state image sensor and its manufacturing method - Google Patents

Solid-state image sensor and its manufacturing method Download PDF

Info

Publication number
JP2006156799A
JP2006156799A JP2004346869A JP2004346869A JP2006156799A JP 2006156799 A JP2006156799 A JP 2006156799A JP 2004346869 A JP2004346869 A JP 2004346869A JP 2004346869 A JP2004346869 A JP 2004346869A JP 2006156799 A JP2006156799 A JP 2006156799A
Authority
JP
Japan
Prior art keywords
solid
refractive index
imaging device
state imaging
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004346869A
Other languages
Japanese (ja)
Inventor
Hisashi Suzuki
久 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2004346869A priority Critical patent/JP2006156799A/en
Publication of JP2006156799A publication Critical patent/JP2006156799A/en
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor such as a CCD, for improving light collection efficiency to a light reception part for photoelectric conversion and effectively utilizing incident light. <P>SOLUTION: The solid-state image sensor 10 includes the light receiver 12 for photoelectric conversion, a light-shielding film 14 having an opening 14A corresponding to the light receiving surface 12A of the light receiver 12, and a color filter 17. An intermediate layer 16 formed of a highly refractive material comprising metal oxide particles dispersed in a resist is interposed between the light receiving surface 12A of the light receiver 12 and the color filter 17. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、固体撮像素子及びその製造方法に係り、特に受光部とカラーフィルタとの間に層内レンズ又は導波路等を形成し、集光性を向上させた固体撮像素子及びその製造方法に関する。   The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly, to a solid-state imaging device in which an intralayer lens or a waveguide or the like is formed between a light receiving portion and a color filter to improve light collecting performance and a manufacturing method thereof. .

従来、ＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖｉｃｅ）等の固体撮像素子は、各画素上に転送レジスタ等の光電変換に寄与しない領域が存在するため、画素面全体に対する受光部の受光面の開口率が低く、受光部の感度向上を図るための開口率を上げる必要が生じていた。このため、カラーフィルタの表面にオンチップマイクロレンズを形成するとともに、受光部とカラーフィルタとの間に層内レンズや導波路等を形成し、入射光の有効利用を図った固体撮像素子が提案されている。   Conventionally, a solid-state imaging device such as a CCD (Charge Coupled Device) has a region that does not contribute to photoelectric conversion, such as a transfer register, on each pixel. Therefore, the aperture ratio of the light receiving surface of the light receiving unit with respect to the entire pixel surface is low. It has been necessary to increase the aperture ratio in order to improve the sensitivity of the part. For this reason, a solid-state imaging device is proposed in which an on-chip microlens is formed on the surface of the color filter, and an in-layer lens, a waveguide, or the like is formed between the light receiving portion and the color filter to effectively use incident light. Has been.

層内レンズを形成するものとして、受光面の直上部に受光面に向かって凸となる底面を有した凹部を設け、この凹部内にプラズマＣＶＤ法等により高屈折率のシリコン窒化膜（ＳｉＮ）を成膜して層内レンズを形成するものがある（例えば、特許文献１参照。）。   In order to form an in-layer lens, a concave portion having a bottom surface convex toward the light receiving surface is provided immediately above the light receiving surface, and a silicon nitride film (SiN) having a high refractive index is formed in the concave portion by plasma CVD or the like. Is formed to form an in-layer lens (for example, see Patent Document 1).

また、導波路を形成するものとして、受光センサの上方に透明膜を形成し、透明膜の受光センサ直上部に孔を設け、この孔に屈折率の高い有機ポリマーを埋め込んで導波路としたもの（例えば、特許文献２参照。）がある。
特開平９−６４３２５号公報 特開２００３−２９８０３４号公報 In addition, a waveguide is formed by forming a transparent film above the light receiving sensor, providing a hole directly above the light receiving sensor of the transparent film, and embedding a high refractive index organic polymer in the hole to form a waveguide. (For example, refer to Patent Document 2).
JP-A-9-64325 JP 2003-298034 A

しかし、前述の特許文献１に記載されたように高屈折率のシリコン窒化膜をプラズマＣＶＤ法等により成膜する方法では、層内レンズを形成する場合においても導波路を形成する場合においても、アスペクト比（幅と深さの比）が大きい凹部や孔の場合、カバレッジが悪いためシリコン窒化膜を埋め込んだ凹部内や孔内にボイドが発生する。   However, in the method of forming a silicon nitride film having a high refractive index by plasma CVD or the like as described in Patent Document 1 described above, both in the case of forming an inner lens and in the case of forming a waveguide, In the case of a recess or hole having a large aspect ratio (width to depth ratio), voids are generated in the recess or hole in which the silicon nitride film is embedded because of poor coverage.

また、屈折率の調整が難しく、所望の屈折率を有するレンズを形成するのが困難であった。更に、下地の凹凸に倣って成膜されるため、後工程のために上面を平坦にする必要があり、エッチバック等の平坦化プロセスを行わなければならず、プロセスの煩雑化とコスト高をまねいていた。また、製造装置もＣＶＤ装置のみならずドライエッチング装置等の高価な装置を必要とし、更にコストを高める要因となっていた。   Further, it is difficult to adjust the refractive index, and it is difficult to form a lens having a desired refractive index. Furthermore, since the film is formed following the unevenness of the base, it is necessary to flatten the upper surface for the subsequent process, and a flattening process such as etch back must be performed, which complicates the process and increases the cost. I was imitating. In addition, the manufacturing apparatus requires not only a CVD apparatus but also an expensive apparatus such as a dry etching apparatus, which further increases costs.

また、前述の特許文献２に記載されたように、透明膜の受光センサ直上部に設けた孔に屈折率の高い有機ポリマーを埋め込んで導波路を形成する方法の場合、有機ポリマーでは高屈折率の材料が存在しないため、十分な集光性能が得られないという問題があった。   In addition, as described in Patent Document 2 described above, in the method of forming a waveguide by embedding a high refractive index organic polymer in a hole provided immediately above the light receiving sensor of the transparent film, the organic polymer has a high refractive index. There is a problem that sufficient light condensing performance cannot be obtained because of the absence of this material.

本発明は、このような事情に鑑みてなされたもので、ＣＣＤ等の固体撮像素子において、光電変換を行う受光部への集光効率を高め入射光の有効利用を図った固体撮像素子を提供することを目的とする。   The present invention has been made in view of such circumstances, and provides a solid-state image sensor that increases the light collection efficiency to a light-receiving unit that performs photoelectric conversion and effectively uses incident light in a solid-state image sensor such as a CCD. The purpose is to do.

前記目的を達成するために、本発明に係る固体撮像素子は、光電変換を行う受光部と、該受光部の受光面に対する開口部を有した遮光膜と、カラーフィルタとを備えた固体撮像素子で、前記受光部の受光面とカラーフィルタとの間に、レジストに金属酸化物微粒子を分散させてなる高屈折率材料で形成された中間層が介在していることを特徴とする。   In order to achieve the above object, a solid-state imaging device according to the present invention includes a light-receiving unit that performs photoelectric conversion, a light-shielding film having an opening with respect to a light-receiving surface of the light-receiving unit, and a color filter. Thus, an intermediate layer formed of a high refractive index material in which metal oxide fine particles are dispersed in a resist is interposed between the light receiving surface of the light receiving portion and the color filter.

本発明による固体撮像素子は、中間層にレジストに金属酸化物微粒子を分散させた高屈折率材料が用いられているので、屈折率の調整が容易であって、塗布方法によって成膜することができ、プロセスの煩雑化を防ぐとともに安価な製造装置を用いて製造することができる集光効率の高い固体撮像素子である。   Since the solid-state imaging device according to the present invention uses a high refractive index material in which metal oxide fine particles are dispersed in a resist in an intermediate layer, the refractive index can be easily adjusted and can be formed by a coating method. This is a solid-state imaging device with high light collection efficiency that can be manufactured by using an inexpensive manufacturing apparatus while preventing complication of the process.

また、本発明に係る固体撮像素子は、前記発明において、前記中間層が、前記受光部の受光面に向かって凸形状に形成され凸形状の断面の幅寸法に対する深さ寸法の割合で定義されるアスペクト比が０．２以上の層内レンズ、又は円柱状に形成され直径に対する長さの割合で定義されるアスペクト比が０．２以上の導波路であることを特徴とする。   In the solid-state imaging device according to the present invention, in the above invention, the intermediate layer is formed in a convex shape toward the light receiving surface of the light receiving unit, and is defined by a ratio of a depth dimension to a width dimension of a convex cross section. It is an intralayer lens having an aspect ratio of 0.2 or more, or a waveguide formed in a columnar shape and having an aspect ratio defined by a ratio of a length to a diameter of 0.2 or more.

本発明の固体撮像素子は、アスペクト比が０．２以上の層内レンズ、又はアスペクト比が０．２以上の導波路であっても、層内レンズ、又は導波路内にボイドの発生がない。   The solid-state imaging device of the present invention has no intra-layer lens or void in the intra-layer lens or waveguide even when the intra-layer lens has an aspect ratio of 0.2 or more or a waveguide having an aspect ratio of 0.2 or more. .

また、本発明に係る固体撮像素子は、前記発明において、前記中間層が、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させてなる波長６３３ｎｍの光に対する屈折率が１．６以上の高屈折率材料で形成された層内レンズ又は導波路であることを特徴とする。更に、本発明に係る固体撮像素子は、前記発明において、前記層内レンズは、屈折率の異なる複数の材料が積層して形成されているものも含んでいる。   The solid-state imaging device according to the present invention is the solid-state imaging device according to the present invention, wherein the intermediate layer has a refractive index with respect to light having a wavelength of 633 nm, in which metal oxide fine particles are dispersed in a visible light transmissive photosensitive resist or a visible light transmissive resist. Is an intralayer lens or waveguide formed of a high refractive index material of 1.6 or more. Furthermore, the solid-state imaging device according to the present invention includes, in the above-described invention, the intra-layer lens in which a plurality of materials having different refractive indexes are laminated.

本発明に係る固体撮像素子の製造方法は、光電変換を行う受光部と、該受光部の受光面に対する開口部を有した遮光膜と、カラーフィルタとを備えた固体撮像素子の製造方法において、前記受光部の受光面とカラーフィルタとの間に、レジストに金属酸化物微粒子を分散させてなる高屈折率材料で中間層を形成する工程を含むことを特徴とする。   A method of manufacturing a solid-state imaging device according to the present invention includes a light-receiving unit that performs photoelectric conversion, a light-shielding film that has an opening with respect to a light-receiving surface of the light-receiving unit, and a color filter. The method includes a step of forming an intermediate layer of a high refractive index material in which metal oxide fine particles are dispersed in a resist between a light receiving surface of the light receiving portion and a color filter.

本発明によれば、中間層にレジストに金属酸化物微粒子を分散させた高屈折率材料を用いるので、屈折率の調整が容易であって、塗布方法によって成膜することができる。このためプロセスの煩雑化を防ぐとともに安価な製造装置を用いて集光効率の高い固体撮像素子を製造することができる。   According to the present invention, since a high refractive index material in which metal oxide fine particles are dispersed in a resist is used for the intermediate layer, the refractive index can be easily adjusted, and a film can be formed by a coating method. For this reason, it is possible to manufacture a solid-state imaging device with high light collection efficiency while preventing complication of the process and using an inexpensive manufacturing apparatus.

また、本発明に係る固体撮像素子の製造方法は、前記発明において、前記中間層が、前記受光部の受光面に向かって凸形状に形成され凸形状の断面の幅寸法に対する深さ寸法の割合で定義されるアスペクト比が０．２以上の層内レンズ、又は円柱状に形成され直径に対する長さの割合で定義されるアスペクト比が０．２以上の導波路であることを特徴とする。   Further, in the method for manufacturing a solid-state imaging device according to the invention, in the invention, the intermediate layer is formed in a convex shape toward the light receiving surface of the light receiving unit, and the ratio of the depth dimension to the width dimension of the convex cross section. An intralayer lens having an aspect ratio defined by 0.2 or more, or a waveguide formed in a cylindrical shape and having an aspect ratio defined by a ratio of a length to a diameter of 0.2 or more.

本発明によれば、アスペクト比が０．２以上の層内レンズ、又はアスペクト比が０．２以上の導波路に対して、ボイドを発生させずに高屈折率の層内レンズ又は導波路を形成することができる。   According to the present invention, an intra-layer lens or waveguide having a high refractive index without generating voids with respect to an intra-layer lens having an aspect ratio of 0.2 or more, or a waveguide having an aspect ratio of 0.2 or more. Can be formed.

また、本発明に係る固体撮像素子の製造方法は、前記発明において、前記中間層が、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させてなる波長６３３ｎｍの光に対する屈折率が１．６以上の高屈折率材料で形成された層内レンズ又は導波路であることを特徴とする。更に、本発明に係る固体撮像素子の製造方法は、前記発明において、前記層内レンズは、屈折率の異なる複数の材料を積層して形成する方法も含んでいる。   In the solid-state imaging device manufacturing method according to the present invention, in the above-mentioned invention, the intermediate layer is a light having a wavelength of 633 nm, in which metal oxide fine particles are dispersed in a visible light transmissive photosensitive resist or a visible light transmissive resist. It is an intralayer lens or a waveguide formed of a high refractive index material having a refractive index of 1.6 or more. Furthermore, the method for manufacturing a solid-state imaging device according to the present invention includes a method in which, in the above-described invention, the intra-layer lens is formed by stacking a plurality of materials having different refractive indexes.

また、本発明に係る固体撮像素子の製造方法は、前記発明において、前記金属酸化物微粒子の添加量を変化させることによって、前記高屈折率材料の屈折率を所望の値に調整することを特徴とする。本発明によれば、所望の屈折率を有する層内レンズ又は導波路を容易に形成することができる。   The solid-state imaging device manufacturing method according to the present invention is characterized in that, in the above invention, the refractive index of the high refractive index material is adjusted to a desired value by changing the addition amount of the metal oxide fine particles. And According to the present invention, an in-layer lens or a waveguide having a desired refractive index can be easily formed.

また、本発明に係る固体撮像素子の製造方法は、前記発明において、前記高屈折率材料を下地層の上に塗布することによって、前記中間層を成膜することを特徴とする。本発明によれば、高屈折率材料を下地層であるオーバーコート層１５、あるいは層間膜１５Ａの上に塗布することによって中間層を成膜するので、プロセスの煩雑化を防ぐとともに安価な製造装置を用いて集光効率の高い固体撮像素子を製造することができる。   The method for manufacturing a solid-state imaging device according to the present invention is characterized in that, in the above-described invention, the intermediate layer is formed by applying the high refractive index material on a base layer. According to the present invention, since the intermediate layer is formed by applying a high refractive index material on the overcoat layer 15 or the interlayer film 15A as the underlayer, the manufacturing process is prevented and the manufacturing apparatus is inexpensive. Can be used to manufacture a solid-state imaging device with high light collection efficiency.

以上説明したように本発明の固体撮像素子及びその製造方法によれば、受光部の受光面とカラーフィルタとの間の中間層にレジストに金属酸化物微粒子を分散させてなる高屈折率材料を用いたので、屈折率の調整が容易であって、塗布方法によって成膜することができ、プロセスの煩雑化を防ぐとともに安価な製造装置を用いて集光効率の高い固体撮像素子を製造することができる。   As described above, according to the solid-state imaging device and the manufacturing method thereof of the present invention, the high refractive index material in which the metal oxide fine particles are dispersed in the resist in the intermediate layer between the light receiving surface of the light receiving portion and the color filter. Since it is used, the refractive index can be easily adjusted, the film can be formed by a coating method, and the solid state imaging device with high light collection efficiency can be manufactured using an inexpensive manufacturing apparatus while preventing the process from becoming complicated. Can do.

以下添付図面に従って本発明に係る固体撮像素子及びその製造方法の好ましい実施の形態について詳説する。なお、各図において同一部材には同一の番号または記号を付している。   Preferred embodiments of a solid-state imaging device and a method for manufacturing the same according to the present invention will be described in detail below with reference to the accompanying drawings. In each figure, the same number or symbol is attached to the same member.

図１は本発明に係る固体撮像素子の第１の実施形態を表わす部分断面図である。固体撮像素子１０は、Ｓｉ基板１１、Ｓｉ基板１１に形成された受光素子であるフォトダイオード（受光部）１２、光電変換された電荷を外部に転送する転送電極１３、遮光膜１４、オーバーコート層１５、オーバーコート層１５の上部に形成された層内レンズ（中間層）１６、層内レンズ１６の上部に設けられたカラーフィルタ１７、及びカラーフィルタ１７の上部に形成されたオンチップレンズ１８等で構成されている。   FIG. 1 is a partial sectional view showing a first embodiment of a solid-state imaging device according to the present invention. The solid-state imaging device 10 includes a Si substrate 11, a photodiode (light receiving unit) 12 that is a light receiving element formed on the Si substrate 11, a transfer electrode 13 that transfers photoelectrically converted charges to the outside, a light shielding film 14, and an overcoat layer. 15, an inner lens (intermediate layer) 16 formed on the overcoat layer 15, a color filter 17 provided on the upper layer lens 16, an on-chip lens 18 formed on the color filter 17, and the like It consists of

フォトダイオード１２、図示しない読み出し部及び転送レジスタ、転送電極１３、遮光膜１４等でいわゆるＣＣＤを構成している。遮光膜１４はフォトダイオード１２の受光面１２Ａに対応する部分に開口部１４Ａを有し、受光面１２Ａへの光の入射を遮ることなく他への光の入射を遮蔽するように形成されている。なお、ここまでのＣＣＤの基本構成については一般によく知られた構成であるので、詳細な説明は省略する。   A so-called CCD is constituted by the photodiode 12, the readout unit and transfer register (not shown), the transfer electrode 13, the light shielding film 14, and the like. The light shielding film 14 has an opening 14A at a portion corresponding to the light receiving surface 12A of the photodiode 12, and is formed so as to shield light from entering the other without blocking light incident on the light receiving surface 12A. . Since the basic configuration of the CCD so far is a generally well-known configuration, detailed description thereof is omitted.

オーバーコート層１５は、透明な材料（波長６３３ｎｍの光に対する屈折率が１．５程度）から形成されたもので、具体的にはＴＥＯＳ（ｔｅｔｒａ ｅｔｈｙｌ ｏｒｔｈｏ ｓｉｌｉｃａｔｅ) を反応ガスとしてプラズマＣＶＤ（ｃｈｅｍｉｃａｌ ｖａｐｏｒ ｄｅｐｏｓｉｔｉｏｎ）によって形成したＳｉＯ2 膜、あるいは常圧ＣＶＤによって形成したＰＳＧ、ＢＰＳＧ、あるいはＳＯＧ等を必要に応じリフローさせて形成したＳｉＯ2 系酸化膜である。 The overcoat layer 15 is formed of a transparent material (refractive index with respect to light having a wavelength of 633 nm is about 1.5), and specifically, plasma CVD (chemical vapor) using TEOS (tetraethyl orthosilicate) as a reactive gas. SiO 2 film formed by deposition), or SiO 2 oxide film formed by reflowing PSG, BPSG, SOG or the like formed by atmospheric pressure CVD if necessary.

オーバーコート層１５の断面形状は、図１に示すように、下地の凹凸形状に倣って受光面１２Ａ側に向かって凸となる底面を有した凹部と、遮光膜１４の上部で盛り上がった凸部とを有している。   As shown in FIG. 1, the cross-sectional shape of the overcoat layer 15 includes a concave portion having a bottom surface that protrudes toward the light receiving surface 12 </ b> A following the concave and convex shape of the base, and a convex portion that rises above the light shielding film 14. And have.

層内レンズ１６は、図１に示すように、オーバーコート層１５の凹部を埋設して受光面１２Ａ側に向かった凸部を有するように形成された透明な高屈折率材料からなるレンズである。   As shown in FIG. 1, the intralayer lens 16 is a lens made of a transparent high refractive index material formed so as to have a convex portion facing the light receiving surface 12 </ b> A by embedding the concave portion of the overcoat layer 15. .

層内レンズ１６の材質は、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させたもので、波長６３３ｎｍの光に対する屈折率ｎ＝１．６以上、好ましくは屈折率ｎ＝１．８以上の高屈折率材料である。   The material of the in-layer lens 16 is a visible light transmissive photosensitive resist or a visible light transmissive resist in which metal oxide fine particles are dispersed, and the refractive index n = 1.6 or more, preferably refracted with respect to light having a wavelength of 633 nm. It is a high refractive index material having an index n = 1.8 or more.

可視光透過性感光性レジスト又は可視光透過性レジストとしては、比較的屈折率の高いポリマーを用いる場合は、ポリスチレン、スチレン共重合体、ポリカーボネート、メラミン樹脂、フェノール樹脂、エポキシ樹脂および環状（脂環式又は芳香族）イソシアネートとポリオールとの反応で得られるポリウレタンがある。その他の環状（芳香族、複素環式、脂環式）基を有するポリマーや、フッ素以外のハロゲン原子を置換基として有するポリマーも用いられる。また、二重結合を導入してラジカル硬化を可能にしたモノマーの重合反応によりポリマーを形成したものでもよい。   As a visible light transmissive photosensitive resist or a visible light transmissive resist, when a polymer having a relatively high refractive index is used, polystyrene, styrene copolymer, polycarbonate, melamine resin, phenol resin, epoxy resin, and cyclic (alicyclic ring) There are polyurethanes obtained by reaction of isocyanates with polyols of the formula or aromatic). Polymers having other cyclic (aromatic, heterocyclic, alicyclic) groups, and polymers having halogen atoms other than fluorine as substituents are also used. Moreover, what formed the polymer by the polymerization reaction of the monomer which introduce | transduced the double bond and enabled radical hardening may be used.

また、金属酸化物微粒子を分散させるため比較的屈折率の低いポリマーでもよく、例えば、ビニル系ポリマー（アクリル系ポリマーを含む）、ポリエステル系ポリマー（アルキド系ポリマーを含む）、セルロース系ポリマー、ウレタン系ポリマー等を用いてもよい。   In addition, a polymer having a relatively low refractive index may be used to disperse the metal oxide fine particles. For example, vinyl polymers (including acrylic polymers), polyester polymers (including alkyd polymers), cellulose polymers, and urethane polymers. A polymer or the like may be used.

可視光透過性感光性レジスト又は可視光透過性レジストに分散させる金属酸化物微粒子としては、アルミニウム、チタニウム、ジルコニウム、アンチモン、すず、亜鉛、インジウム、タンタルなどの酸化物が用いられる。   As the metal oxide fine particles dispersed in the visible light transmissive photosensitive resist or the visible light transmissive resist, oxides such as aluminum, titanium, zirconium, antimony, tin, zinc, indium, and tantalum are used.

金属酸化物微粒子の平均粒径は、１〜２０００ｎｍであることが好ましく、より好ましくは２〜１０００ｎｍであり、更に好ましくは５〜５００ｎｍであり、１０〜２００ｎｍが最も好ましい。   The average particle size of the metal oxide fine particles is preferably 1 to 2000 nm, more preferably 2 to 1000 nm, still more preferably 5 to 500 nm, and most preferably 10 to 200 nm.

金属酸化物微粒子の添加量は１〜３０重量％の範囲で、添加量を変化させることにより屈折率が所望の値に調整される。   The addition amount of the metal oxide fine particles is in the range of 1 to 30% by weight, and the refractive index is adjusted to a desired value by changing the addition amount.

この金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストは、塗布にてオーバーコート層１５の上面に成膜される。塗布方法としては、スピンコート法、ディップコート法等が用いられる。   The visible light transmissive photosensitive resist or the visible light transmissive resist in which the metal oxide fine particles are dispersed is formed on the upper surface of the overcoat layer 15 by coating. As a coating method, a spin coating method, a dip coating method, or the like is used.

塗布後の硬化方法は、プリベーク、ステッパー露光、ポストベーク、現像等を行うフォトリソグラフィーで成膜、パターニングする方法、又は乾燥後紫外線照射で硬化、成膜する方法、あるいは熱により硬化、成膜する方法が用いられる。   The curing method after coating is a method of film formation and patterning by photolithography that performs pre-baking, stepper exposure, post-baking, development, etc., a method of curing and film formation by ultraviolet irradiation after drying, or a method of curing and film formation by heat. The method is used.

従来の固体撮像素子では層内レンズとしてシリコン窒化膜（ＳｉＮ）をプラズマＣＶＤ法等により形成するため、層内レンズの内部にボイドが生じやすかったが、本発明の固体撮像素子１０では、金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストを塗布にて成膜形成するため、図１に示す層内レンズ１６の幅寸法Ａに対する厚さ寸法Ｂの割合（Ｂ／Ａ）で定義するアスペクト比が０．３以上であっても、層内レンズ１６の内部にボイドが発生することがなく、屈折率の調整が容易で、安価な装知で層内レンズ１６が形成される。なお、アスペクト比は０．２以上の方がより好ましい。   In the conventional solid-state imaging device, since a silicon nitride film (SiN) is formed as an inner lens by plasma CVD or the like, voids are likely to be generated inside the inner-layer lens. However, in the solid-state imaging device 10 of the present invention, metal oxidation is performed. The ratio of the thickness dimension B to the width dimension A of the intralayer lens 16 shown in FIG. 1 (B) in order to form a visible light transmissive photosensitive resist or a visible light transmissive resist in which fine particles are dispersed by coating. / A) Even when the aspect ratio defined by 0.3 is 0.3 or more, no voids are generated in the inner lens 16, the refractive index can be easily adjusted, and the inner lens 16 can be adjusted with low cost. Is formed. The aspect ratio is more preferably 0.2 or more.

層内レンズ１６の上にはカラーフィルタ１７が形成されており、Ｒ（赤）、Ｂ（青）、Ｇ（緑）のフィルタが夫々対応するフォトダイオード１２の上部に設けられている。また、カラーフィルタ１７の上面にはオンチップレンズ１８が形成されている。   A color filter 17 is formed on the in-layer lens 16, and R (red), B (blue), and G (green) filters are provided above the corresponding photodiodes 12. An on-chip lens 18 is formed on the upper surface of the color filter 17.

オンチップレンズ１８は、フォトレジスト等に用いられる透明樹脂硬化膜でアクリル樹脂、フェノール樹脂、ポリカーボネート、ポリアミド等のポリマーを熱リフローさせて形成したものである。   The on-chip lens 18 is formed by thermally reflowing a polymer such as an acrylic resin, a phenol resin, a polycarbonate, or a polyamide with a transparent resin cured film used for a photoresist or the like.

固体撮像素子１０はこのように構成されており、入射する光がオンチップレンズ１８及び金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストを塗布した高屈折率材料からなる層内レンズ１６によって集光され、受光部への集光効率が高い。   The solid-state imaging device 10 is configured as described above, and the incident light is a high refractive index material coated with a visible light transmissive photosensitive resist or a visible light transmissive resist in which the on-chip lens 18 and metal oxide fine particles are dispersed. Condensed by the in-layer lens 16 made of, the light collection efficiency to the light receiving unit is high.

次に、本発明の第１の実施形態に係る固体撮像素子の製造方法について説明する。図２は製造工程を表わすフローチャートである。先ず最初にＳｉウェーハ上に、既知の方法によって、フォトダイオード１２、図示しない読み出し部及び転送レジスタ、転送電極１３、遮光膜１４等で構成されるいわゆるＣＣＤを形成する（ステップＳ１１）。   Next, a method for manufacturing the solid-state imaging device according to the first embodiment of the present invention will be described. FIG. 2 is a flowchart showing the manufacturing process. First, a so-called CCD including a photodiode 12, a reading unit and transfer register (not shown), a transfer electrode 13, a light shielding film 14 and the like is formed on a Si wafer by a known method (step S11).

次に、フォトダイオード１２及び遮光膜１４を覆うオーバーコート層１５を形成する。オーバーコート層１５は、透明な材料（波長６３３ｎｍの光に対する屈折率が１．５程度）で、具体的には前述したような、ＴＥＯＳを反応ガスとしてプラズマＣＶＤによって形成したＳｉＯ2 膜、あるいは常圧ＣＶＤによって形成したＰＳＧ、ＢＰＳＧ、あるいはＳＯＧ等を必要に応じリフローさせて形成したＳｉＯ2 系酸化膜を成膜する。 Next, an overcoat layer 15 covering the photodiode 12 and the light shielding film 14 is formed. The overcoat layer 15 is made of a transparent material (with a refractive index of about 1.5 with respect to light having a wavelength of 633 nm). Specifically, as described above, an SiO 2 film formed by plasma CVD using TEOS as a reaction gas, or a normal material. A SiO 2 -based oxide film formed by reflowing PSG, BPSG, SOG or the like formed by pressure CVD if necessary is formed.

この時、オーバーコート層１５の断面形状は、図１に示すように、下地の凹凸形状に倣って受光面１２Ａ側に向かって凸となる底面を有した凹部と、遮光膜１４の上部で盛り上がった凸部とを有している（ステップＳ１２）。   At this time, as shown in FIG. 1, the cross-sectional shape of the overcoat layer 15 rises at the upper part of the light-shielding film 14 and the concave part having the bottom surface convex toward the light-receiving surface 12A side following the concave-convex shape of the base. (Step S12).

次に、図１に示すように、層内レンズ１６の下地層であるオーバーコート層１５の上部に、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させたもので、波長６３３ｎｍの光に対する屈折率ｎ＝１．６以上、好ましくは屈折率ｎ＝１．８以上の高屈折率材料を、オーバーコート層１５の凹部を埋設して受光面１２Ａ側に向かった凸部を有するように成膜し、層内レンズ１６を形成する。   Next, as shown in FIG. 1, metal oxide fine particles are dispersed in a visible light transmissive photosensitive resist or a visible light transmissive resist on the overcoat layer 15 which is an underlayer of the in-layer lens 16. Then, a high refractive index material with a refractive index n = 1.6 or more, preferably a refractive index n = 1.8 or more with respect to light having a wavelength of 633 nm was embedded in the concave portion of the overcoat layer 15 toward the light receiving surface 12A side. A film is formed so as to have a convex portion, and the in-layer lens 16 is formed.

なおこの時、図１に示すような凹部の幅寸法Ａに対する深さ寸法Ｂの割合（Ｂ／Ａ）で定義するアスペクト比が０．３以上であっても、次の層内レンズ１６の形成工程において層内レンズ１６の内部にボイドが発生しない。   At this time, even if the aspect ratio defined by the ratio (B / A) of the depth dimension B to the width dimension A of the recess as shown in FIG. In the process, no void is generated in the inner lens 16.

可視光透過性感光性レジスト又は可視光透過性レジストの材料は、前述したように、ポリスチレン、スチレン共重合体、ポリカーボネート、メラミン樹脂、フェノール樹脂、エポキシ樹脂等の比較的屈折率の高いポリマー、あるいはビニル系ポリマー（アクリル系ポリマーを含む）、ポリエステル系ポリマー（アルキド系ポリマーを含む）、セルロース系ポリマー、ウレタン系ポリマー等の比較的屈折率の低いポリマーを用いる。   As described above, the material for the visible light transmissive photosensitive resist or the visible light transmissive resist is a polymer having a relatively high refractive index such as polystyrene, styrene copolymer, polycarbonate, melamine resin, phenol resin, epoxy resin, or the like. A polymer having a relatively low refractive index such as a vinyl polymer (including an acrylic polymer), a polyester polymer (including an alkyd polymer), a cellulose polymer, a urethane polymer, or the like is used.

レジストに分散させる金属酸化物微粒子としては、前述したように、アルミニウム、チタニウム、ジルコニウム、アンチモン、すず、亜鉛、インジウム、タンタルなどの酸化物を用いる。   As the metal oxide fine particles dispersed in the resist, as described above, oxides such as aluminum, titanium, zirconium, antimony, tin, zinc, indium, and tantalum are used.

金属酸化物微粒子の平均粒径は、１〜２０００ｎｍであることが好ましく、より好ましくは２〜１０００ｎｍであり、更に好ましくは５〜５００ｎｍであり、１０〜２００ｎｍが最も好ましい。   The average particle size of the metal oxide fine particles is preferably 1 to 2000 nm, more preferably 2 to 1000 nm, still more preferably 5 to 500 nm, and most preferably 10 to 200 nm.

金属酸化物微粒子の添加量は１〜３０重量％の範囲で、添加量を変化させることにより屈折率を所望の値に調整する。   The addition amount of the metal oxide fine particles is in the range of 1 to 30% by weight, and the refractive index is adjusted to a desired value by changing the addition amount.

この金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストからなる高屈折率材料の成膜は、オーバーコート層１５の上面に塗布にて行う。塗布方法としては、スピンコート法、ディップコート法等を用いる。   The high refractive index material made of a visible light transmissive photosensitive resist or a visible light transmissive resist in which the metal oxide fine particles are dispersed is formed on the upper surface of the overcoat layer 15 by coating. As a coating method, a spin coating method, a dip coating method, or the like is used.

塗布の後の硬化方法は、プリベーク、ステッパー露光、ポストベーク、現像等を行うフォトリソグラフィーで成膜、パターニングする方法、又は乾燥後紫外線照射で硬化、成膜する方法、あるいは熱により硬化、成膜する方法を用いる。   The curing method after coating is a method of film formation and patterning by photolithography that performs pre-baking, stepper exposure, post-baking, development, etc., a method of curing and film formation by ultraviolet irradiation after drying, or a method of curing and film formation by heat. Use the method to do.

これにより、所望の屈折率を有するとともにボイドのない層内レンズ１６が形成される。また、層内レンズ１６の上面にエッチバック等を施す平坦化処理工程を必要としない（ステップＳ１３）。   Thereby, the in-layer lens 16 having a desired refractive index and having no voids is formed. Further, there is no need for a flattening process for performing etch back or the like on the upper surface of the in-layer lens 16 (step S13).

次に、既知の方法によって、層内レンズ１６の上面にカラーフィルタ１７を形成し（ステップＳ１４）、次いでカラーフィルタ１７の上面にオンチップレンズ１８を形成する（ステップＳ１５）。   Next, the color filter 17 is formed on the upper surface of the in-layer lens 16 by a known method (step S14), and then the on-chip lens 18 is formed on the upper surface of the color filter 17 (step S15).

以上が本発明の第１の実施形態に係る固体撮像素子の製造方法である。このように、金属酸化物微粒子を分散させて所望の屈折率に調整した可視光透過性感光性レジスト又は可視光透過性レジストからなる高屈折率材料を塗布して層内レンズ１６を形成するので、所望の高屈折率を有するレンズをアスペクト比の大きな凹部に、ボイドを発生させることなく容易に形成することができる。また、上面の平坦化工程を必要とせず、安価な装置で低コストな固体撮像素子を製造することができる。   The above is the manufacturing method of the solid-state imaging device according to the first embodiment of the present invention. In this way, the in-layer lens 16 is formed by applying a visible light transmissive photosensitive resist or a high refractive index material made of a visible light transmissive resist in which metal oxide fine particles are dispersed and adjusted to a desired refractive index. A lens having a desired high refractive index can be easily formed in a recess having a large aspect ratio without generating voids. In addition, a low-cost solid-state imaging device can be manufactured with an inexpensive apparatus without requiring a flattening process on the upper surface.

次に、本発明の第１の実施形態の変形例について説明する。図３は、第１の実施形態の変形例の固体撮像素子を表わす部分断面図である。図３に示すように、この変形例の固体撮像素子１０Ａは、層内レンズ１６Ａが前述した図１に示す第１の実施形態のように１層ではなく、３層の積層体で形成されている。   Next, a modification of the first embodiment of the present invention will be described. FIG. 3 is a partial cross-sectional view showing a solid-state imaging device according to a modification of the first embodiment. As shown in FIG. 3, in the solid-state imaging device 10A of this modified example, the inner lens 16A is formed not by one layer but by a three-layered laminate as in the first embodiment shown in FIG. Yes.

この３層の積層体で形成された層内レンズ１６Ａの形成は、最初に金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストからなる高屈折率材料を塗布して層内レンズ１６ａを形成し、層内レンズ１６ａの上に層内レンズ１６ａよりも屈折率を大きく調整した高屈折率材料を塗布して層内レンズ１６ｂを形成し、最後に層内レンズ１６ｂの上に層内レンズ１６ｂよりも屈折率を大きく調整した高屈折率材料を塗布して層内レンズ１６ｃを形成する。   The intra-layer lens 16A formed of the three-layer laminate is formed by first applying a visible light transmissive photosensitive resist in which metal oxide fine particles are dispersed or a high refractive index material made of a visible light transmissive resist. The inner lens 16a is formed, and a high refractive index material having a refractive index adjusted to be larger than that of the inner lens 16a is applied on the inner lens 16a to form the inner lens 16b, and finally the inner lens 16b. A high refractive index material whose refractive index is adjusted to be larger than that of the in-layer lens 16b is applied thereon to form the in-layer lens 16c.

層内レンズ１６Ａ以外の各構成は、前述した図１で表わす第１の実施形態と同じであるので、その説明は省略する。   Each configuration other than the inner lens 16A is the same as that of the first embodiment shown in FIG.

固体撮像素子１０Ａはこのように構成されているので、入射する光はオンチップレンズ１８で第１段目の集光がなされ、次いで層内レンズ１６ｃ、層内レンズ１６ｂ、層内レンズ１６ａで夫々集光されて、効率良くフォトダイオード１２の受光面１２Ａに入射する。   Since the solid-state imaging device 10A is configured in this way, incident light is condensed at the first stage by the on-chip lens 18, and then by the inner lens 16c, the inner lens 16b, and the inner lens 16a, respectively. The light is collected and efficiently enters the light receiving surface 12A of the photodiode 12.

次に、本発明に係る固体撮像素子の第２の実施形態について説明する。図４は、第２の実施形態の固体撮像素子を表わす部分断面図である。この第２の実施形態は、フォトダイオード１２の受光面１２Ａの上部とカラーフィルタ１７との間に中間層としての導波路１６Ｂを設けたものである。   Next, a second embodiment of the solid-state imaging device according to the present invention will be described. FIG. 4 is a partial cross-sectional view showing the solid-state imaging device of the second embodiment. In the second embodiment, a waveguide 16 </ b> B as an intermediate layer is provided between the upper part of the light receiving surface 12 </ b> A of the photodiode 12 and the color filter 17.

固体撮像素子１０Ｂは、図４に示すように、Ｓｉ基板１１、Ｓｉ基板１１に形成された受光素子であるフォトダイオード１２、光電変換された電荷を外部に転送する転送電極１３、遮光膜１４、層間膜１５Ａ、層間膜１５Ａの内部に形成された導波路１６Ｂ、導波路１６Ｂの上部に設けられたカラーフィルタ１７、及びカラーフィルタ１７の上部に形成されたオンチップレンズ１８等で構成されている。   As shown in FIG. 4, the solid-state imaging element 10 </ b> B includes a Si substrate 11, a photodiode 12 that is a light receiving element formed on the Si substrate 11, a transfer electrode 13 that transfers photoelectrically converted charges to the outside, a light shielding film 14, The interlayer film 15A includes a waveguide 16B formed in the interlayer film 15A, a color filter 17 provided on the waveguide 16B, an on-chip lens 18 formed on the color filter 17, and the like. .

層間膜１５Ａは、ＰＳＧ、ＢＰＳＧ等をリフローさせて形成した比較的屈折率の低い材料からなるＳｉＯ2 系酸化膜で、フォトダイオード１２の受光面１２Ａに対応した円形貫通孔が形成されている。 The interlayer film 15A is a SiO 2 oxide film made of a material having a relatively low refractive index formed by reflowing PSG, BPSG or the like, and a circular through hole corresponding to the light receiving surface 12A of the photodiode 12 is formed.

この円形貫通孔を埋設して設けられた導波路１６Ｂは、前述した第１の実施形態及び変形例で説明した層内レンズ１６、１６Ａと同じ材質の高屈折率材料からなっている。即ち、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させた材料で、波長６３３ｎｍの光に対する屈折率ｎ＝１．６以上、好ましくは屈折率ｎ＝１．８以上の高屈折率材料である。   The waveguide 16B provided by embedding the circular through hole is made of a high refractive index material which is the same material as the intralayer lenses 16 and 16A described in the first embodiment and the modified example. That is, a visible light transmissive photosensitive resist or a material in which metal oxide fine particles are dispersed in a visible light transmissive resist, and a refractive index n = 1.6 or more, preferably a refractive index n = 1.8 with respect to light having a wavelength of 633 nm. It is the above high refractive index material.

可視光透過性感光性レジスト又は可視光透過性レジストは具体的には、前述したように、ポリスチレン、スチレン共重合体、ポリカーボネート、メラミン樹脂、フェノール樹脂、エポキシ樹脂等の比較的屈折率の高いポリマー、あるいはビニル系ポリマー（アクリル系ポリマーを含む）、ポリエステル系ポリマー（アルキド系ポリマーを含む）、セルロース系ポリマー、ウレタン系ポリマー等の比較的屈折率の低いポリマーが用いられている。   Specifically, as described above, the visible light transmissive photosensitive resist or the visible light transmissive resist is a polymer having a relatively high refractive index, such as polystyrene, styrene copolymer, polycarbonate, melamine resin, phenol resin, and epoxy resin. Alternatively, polymers having a relatively low refractive index such as vinyl polymers (including acrylic polymers), polyester polymers (including alkyd polymers), cellulose polymers, urethane polymers, and the like are used.

レジストに分散させる金属酸化物微粒子としては、前述したように、アルミニウム、チタニウム、ジルコニウム、アンチモン、すず、亜鉛、インジウム、タンタルなどの酸化物が用いられている。   As the metal oxide fine particles dispersed in the resist, as described above, oxides such as aluminum, titanium, zirconium, antimony, tin, zinc, indium, and tantalum are used.

図４に示すような導波路１６Ｂの直径Ａ’に対する高さＢ’の割合（Ｂ’／Ａ’）で定義するアスペクト比は０．２以上であり、好ましくは０．３以上である。アスペクト比がこの範囲内であっても導波路１６Ｂ内にボイドが発生しない。   The aspect ratio defined by the ratio (B '/ A') of the height B 'to the diameter A' of the waveguide 16B as shown in Fig. 4 is 0.2 or more, preferably 0.3 or more. Even if the aspect ratio is within this range, no void is generated in the waveguide 16B.

導波路１６Ｂの屈折率が層間膜１５Ａの屈折率よりも高いので、導波路１６Ｂの上面に入射した光は側面で屈折されて導波路１６Ｂ内部を進み、フォトダイオード１２の受光面１２Ａに入射する。   Since the refractive index of the waveguide 16B is higher than the refractive index of the interlayer film 15A, the light incident on the upper surface of the waveguide 16B is refracted on the side surface, travels inside the waveguide 16B, and enters the light receiving surface 12A of the photodiode 12. .

導波路１６Ｂと層間膜１５Ａ以外の構成は図１に示した第１の実施形態と同じであるので、それらの説明は省略する。   Since the configuration other than the waveguide 16B and the interlayer film 15A is the same as that of the first embodiment shown in FIG. 1, description thereof is omitted.

固体撮像素子１０Ｂはこのように構成されており、入射する光がオンチップレンズ１８で集光されて金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストを塗布して形成された高屈折率材料からなる導波路１６Ｂに入射し、更に導波路１６Ｂ内を進んでフォトダイオード１２の受光面１２Ａに入射するので、受光部への集光効率が高い。   The solid-state imaging device 10B is configured as described above, and a visible light transmitting photosensitive resist or a visible light transmitting resist in which incident light is collected by the on-chip lens 18 and metal oxide fine particles are dispersed is applied. The light is incident on the waveguide 16B made of a high refractive index material formed in this way, and further travels through the waveguide 16B and enters the light receiving surface 12A of the photodiode 12, so that the light collection efficiency to the light receiving portion is high.

次に、この固体撮像素子１０Ｂの製造方法について説明する。図５は製造工程を表わすフローチャートである。先ず最初にＳｉウェーハ上に、既知の方法によって、フォトダイオード１２、図示しない読み出し部及び転送レジスタ、転送電極１３、遮光膜１４等で構成されるいわゆるＣＣＤを形成する（ステップＳ２１）。なお、この工程は前述した固体撮像素子１０の製造工程におけるステップＳ１１と同じである。   Next, a method for manufacturing the solid-state imaging element 10B will be described. FIG. 5 is a flowchart showing the manufacturing process. First, a so-called CCD composed of a photodiode 12, a readout unit and transfer register (not shown), a transfer electrode 13, a light shielding film 14 and the like is formed on a Si wafer by a known method (step S21). This process is the same as step S11 in the manufacturing process of the solid-state imaging device 10 described above.

次に、ＣＣＤ上にＰＳＧ、ＢＰＳＧ等をリフローさせた比較的屈折率の低い材料からなるＳｉＯ2 系酸化膜を層間膜１５Ａとして成膜する（ステップＳ２２）。 Next, a SiO 2 oxide film made of a material having a relatively low refractive index obtained by reflowing PSG, BPSG or the like on the CCD is formed as an interlayer film 15A (step S22).

次に、層間膜１５Ａのフォトダイオード１２の受光面１２Ａに対応した位置に円形貫通孔をエッチングによって形成する。   Next, a circular through hole is formed by etching at a position corresponding to the light receiving surface 12A of the photodiode 12 of the interlayer film 15A.

次に、この円形貫通孔を埋設するように、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させたもので、波長６３３ｎｍの光に対する屈折率ｎ＝１．６以上、好ましくは屈折率ｎ＝１．８以上の高屈折率材料を、下地層である層間膜１５Ａの上部に塗布して導波路１６Ｂを形成する。。塗布方法としては、スピンコート法、ディップコート法等を用いる。   Next, the visible light transmissive photosensitive resist or the visible light transmissive resist is dispersed with metal oxide fine particles so as to fill the circular through hole, and the refractive index n = 1.6 with respect to light having a wavelength of 633 nm. As described above, the waveguide 16B is formed by applying a high refractive index material, preferably having a refractive index n = 1.8 or more, to the upper portion of the interlayer film 15A as the underlayer. . As a coating method, a spin coating method, a dip coating method, or the like is used.

可視光透過性感光性レジスト又は可視光透過性レジストは具体的には、前述したように、ポリスチレン、スチレン共重合体、ポリカーボネート、メラミン樹脂、フェノール樹脂、エポキシ樹脂等の比較的屈折率の高いポリマー、あるいはビニル系ポリマー（アクリル系ポリマーを含む）、ポリエステル系ポリマー（アルキド系ポリマーを含む）、セルロース系ポリマー、ウレタン系ポリマー等の比較的屈折率の低いポリマーを用いる。   Specifically, the visible light transmissive photosensitive resist or the visible light transmissive resist is, as described above, a polymer having a relatively high refractive index such as polystyrene, styrene copolymer, polycarbonate, melamine resin, phenol resin, and epoxy resin. Alternatively, a polymer having a relatively low refractive index such as a vinyl polymer (including an acrylic polymer), a polyester polymer (including an alkyd polymer), a cellulose polymer, or a urethane polymer is used.

レジストに分散させる金属酸化物微粒子としては、前述したように、アルミニウム、チタニウム、ジルコニウム、アンチモン、すず、亜鉛、インジウム、タンタルなどの酸化物を用いる。金属酸化物微粒子の添加量は１〜３０重量％の範囲で、添加量を変化させることにより屈折率を所望の値に調整する（ステップＳ２３）。   As the metal oxide fine particles dispersed in the resist, as described above, oxides such as aluminum, titanium, zirconium, antimony, tin, zinc, indium, and tantalum are used. The addition amount of the metal oxide fine particles is in the range of 1 to 30% by weight, and the refractive index is adjusted to a desired value by changing the addition amount (step S23).

次に、既知の方法によって、導波路１６Ｂの上面にカラーフィルタ１７を形成し（ステップＳ２４）、次いでカラーフィルタ１７の上面にオンチップレンズ１８を形成する（ステップＳ２５）。なお、この工程は前述した固体撮像素子１０の製造工程におけるステップＳ１４及びステップＳ１５と同じである。   Next, the color filter 17 is formed on the upper surface of the waveguide 16B by a known method (step S24), and then the on-chip lens 18 is formed on the upper surface of the color filter 17 (step S25). This process is the same as step S14 and step S15 in the manufacturing process of the solid-state imaging device 10 described above.

このように本発明の固体撮像素子１０Ｂの製造方法によれば、円形貫通孔を有機ポリマーで埋設して導波路を形成した従来技術に対して、金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストからなる高屈折率材料を円形貫通孔に埋設して導波路１６Ｂを形成したので、所望の高屈折率を有する導波路を形成することができ、集光効率の高い固体撮像素子を得ることができる。   As described above, according to the method for manufacturing the solid-state imaging device 10B of the present invention, the visible light transmissive feeling in which metal oxide fine particles are dispersed is compared with the conventional technique in which a circular through hole is embedded with an organic polymer to form a waveguide. Since the waveguide 16B is formed by embedding a high refractive index material made of an optical resist or a visible light transmissive resist in the circular through hole, a waveguide having a desired high refractive index can be formed, and the light collection efficiency Can be obtained.

次に、実施例について説明する。実施例１においては従来のプラズマＣＶＤ法にてＳｉＮを成膜して層内レンズを形成した場合、及び従来の有機ポリマーを埋設して層内レンズを形成した場合と実施例１との比較を行い、実施例２では従来のプラズマＣＶＤ法にてＳｉＮを成膜して層内レンズを形成した場合と実施例２との比較を行った。また、実施例３では従来のプラズマＣＶＤ法にてＳｉＮを成膜して導波路を形成した場合と実施例３との比較を行った。   Next, examples will be described. In Example 1, a case where an SiN film is formed by a conventional plasma CVD method to form an intralayer lens, and a case where an intralayer lens is formed by embedding a conventional organic polymer are compared with Example 1. In Example 2, a comparison between Example 2 and a case where an intralayer lens was formed by forming a SiN film by a conventional plasma CVD method was performed. In Example 3, a comparison between Example 3 and a case where a waveguide was formed by forming SiN by a conventional plasma CVD method was performed.

各実施例において、比較項目のボイドについてはＣＣＤをＦＩＢ（Ｆｏｃｕｓｅｄ Ｉｏｎ Ｂｅａｍ：収束イオンビーム）で断面にスライスし、ＳＥＭ（Ｓｃａｎｎｉｎｇ Ｅｌｅｃｔｒｏｎ Ｍｉｃｒｏｓｃｏｐｅ：走査型電子顕微鏡）で観察し評価した。   In each example, the voids of the comparative items were evaluated by slicing the CCD into cross-sections with FIB (Focused Ion Beam) and observing with SEM (Scanning Electron Microscope).

また、評価項目の光学特性（Ｇ感度、色シェーディング、スミア）については、ＣＣＤをパッケージングした後撮像レンズを組込み、一定の強度の光を照射して各画素毎に電圧を検出し、それを基に算出した。なお、評価の数値は光学特性及び製造コスト共にプラズマＣＶＤ法ＳｉＮを１００として比較した。Ｇ感度は数値が高いほうがよく、色シェーディング、スミア、及び製造コストは数値が低い方がよい。   As for the optical characteristics (G sensitivity, color shading, smear) of the evaluation items, an image pickup lens is incorporated after packaging the CCD, and a voltage is detected for each pixel by irradiating light of a certain intensity. Based on the calculation. In addition, the numerical value of evaluation compared the optical characteristic and the manufacturing cost with the plasma CVD method SiN as 100. The G sensitivity should be high, and the color shading, smear, and manufacturing cost should be low.

[実施例１]
アクリル系感光性レジストに平均粒径約１００ｎｍの二酸化チタンの微粒子を１５重量％添加し分散させて高屈折率材料を作成した。この高屈折率材料を分光エリプソメータで測定した波長６３３ｎｍにおける屈折率は約１．９であった。 [Example 1]
A high refractive index material was prepared by adding and dispersing 15% by weight of titanium dioxide fine particles having an average particle diameter of about 100 nm in an acrylic photosensitive resist. The refractive index at a wavelength of 633 nm when this high refractive index material was measured with a spectroscopic ellipsometer was about 1.9.

遮光膜１４上にＢＰＳＧを成膜、リフローさせてオーバーコート層１５を形成したＣＣＤ用ウェーハにこの高屈折率材料をスピンコータで塗布し、プリベーク後ｉ線ステッパで露光してパターニングした後、ポストベークし現像して下凸形状の層内レンズ１６を形成した。その後通常のプロセスで図１に示すような固体撮像素子１０を完成させた。   This high refractive index material is applied to the CCD wafer on which the overcoat layer 15 is formed by forming BPSG on the light shielding film 14 and reflowing, and after pre-baking, exposure and patterning are performed with an i-line stepper, and then post-baking. Then, development was performed to form a lower convex in-layer lens 16. Thereafter, a solid-state imaging device 10 as shown in FIG. 1 was completed by a normal process.

図６は、このようにして製造した固体撮像素子１０と従来のプラズマＣＶＤ法にてＳｉＮを成膜して層内レンズを形成した場合、及び従来の有機ポリマーを埋設して層内レンズを形成した場合とで、各評価項目毎に比較した評価結果を表わした一覧表である。   FIG. 6 shows a case where an intralayer lens is formed by forming a SiN film by using the solid-state imaging device 10 manufactured as described above and a conventional plasma CVD method, and an intralayer lens is formed by embedding a conventional organic polymer. It is the list showing the evaluation result compared for every evaluation item.

図６に示すように、実施例１の固体撮像素子１０は、プラズマＣＶＤ法によるＳｉＮ成膜と比較して評価項目のボイドにおいて大きく改善されており、光学特性（Ｇ感度、色シェーディング、スミア）は略同等であり、製造コストは安価であった。   As shown in FIG. 6, the solid-state imaging device 10 of Example 1 is greatly improved in evaluation item voids as compared to the SiN film formation by the plasma CVD method, and has optical characteristics (G sensitivity, color shading, smear). Were substantially the same, and the manufacturing cost was low.

また、有機ポリマー埋設と比較して、ボイドとコストは同等であったが、光学特性においてＧ感度と色シェーディングで改善されており、ＣＣＤの致命的欠陥と言われているスミアについては大きく改善されていた。   Compared with organic polymer embedding, the void and cost were the same, but the optical characteristics were improved by G sensitivity and color shading, and smear, which is said to be a fatal defect of CCD, was greatly improved. It was.

[実施例２]
アクリル系感光性レジストに平均粒径約８０ｎｍの二酸化チタンの微粒子を８重量％、１３重量％、及び１６重量％夫々添加して分散させた屈折率の異なる３種類の高屈折率材料を作成した。分光エリプソメータで測定した波長６３３ｎｍにおける各材料の屈折率は、夫々ｎ＝１．６、ｎ＝１．７５、ｎ＝１．９であった。 [Example 2]
Three kinds of high refractive index materials having different refractive indexes were prepared by adding and dispersing 8 wt%, 13 wt%, and 16 wt% of titanium dioxide fine particles having an average particle diameter of about 80 nm to an acrylic photosensitive resist. . The refractive indexes of the respective materials at a wavelength of 633 nm measured with a spectroscopic ellipsometer were n = 1.6, n = 1.75, and n = 1.9, respectively.

遮光膜１４上にＢＰＳＧをリフローさせて屈折率ｎ＝１．５のオーバーコート層１５を形成したＣＣＤ用ウェーハに、屈折率の低い順にスピンコート、プリベーク、ｉ線ステッパー露光、ポストベーク、現像を繰り返して、図３に示すような３層構造の下凸形状の層内レンズ１６Ａを形成した。   Spin coat, pre-bake, i-line stepper exposure, post-bake, and development are performed on the CCD wafer in which BPSG is reflowed on the light-shielding film 14 to form the overcoat layer 15 having a refractive index n = 1.5. Repeatedly, a downwardly convex in-layer lens 16A having a three-layer structure as shown in FIG. 3 was formed.

屈折率ｎ＝１．６と屈折率ｎ＝１．７５の層の乾燥後の平均膜厚は夫々２００ｎｍ、３００ｎｍとした。屈折率ｎ＝１．９の層では塗布層上面が平坦になるように液濃度と粘度を調整し、平坦部での膜厚が７００ｎｍになる条件で成膜した。   The average film thickness after drying of the layers having a refractive index n = 1.6 and a refractive index n = 1.75 was 200 nm and 300 nm, respectively. In the layer having a refractive index n = 1.9, the liquid concentration and the viscosity were adjusted so that the upper surface of the coating layer was flat, and the film was formed under the condition that the film thickness at the flat portion was 700 nm.

その後通常のプロセスでカラーフィルタ１７、オンチップレンズ１８を形成し、 図３に示すような固体撮像素子１０Ａを完成させた。   Thereafter, the color filter 17 and the on-chip lens 18 were formed by a normal process, and a solid-state imaging device 10A as shown in FIG. 3 was completed.

図７は、このようにして製造した固体撮像素子１０Ａと従来のプラズマＣＶＤ法にてＳｉＮを成膜して層内レンズを形成した場合とで、各評価項目毎に比較した評価結果を表わした一覧表である。   FIG. 7 shows the evaluation results compared for each evaluation item between the solid-state imaging device 10A thus manufactured and a case where an intralayer lens is formed by forming a SiN film by a conventional plasma CVD method. It is a list.

図７に示すように、実施例２の固体撮像素子１０Ａは、プラズマＣＶＤ法によるＳｉＮ成膜と比較して評価項目のボイドにおいて大きく改善されており、光学特性においてＧ感度も大幅に改善され、色シェーディング及びスミアは略同等であった。また、製造コストは安価であった。   As shown in FIG. 7, the solid-state imaging device 10A of Example 2 is greatly improved in the voids of the evaluation items as compared with the SiN film formation by the plasma CVD method, and the G sensitivity is greatly improved in the optical characteristics, Color shading and smear were approximately equivalent. Moreover, the manufacturing cost was low.

[実施例３]
アクリル系感光性レジストに平均粒径約７０ｎｍのジルコニウムの微粒子を１８重量％添加し分散させて高屈折率材料を作成した。この高屈折率材料を分光エリプソメータで測定した波長６３３ｎｍにおける屈折率は約１．８５であった。この材料を導波路の高屈折率材料として用いた。 [Example 3]
A high refractive index material was prepared by adding and dispersing 18% by weight of fine particles of zirconium having an average particle diameter of about 70 nm in an acrylic photosensitive resist. The refractive index at a wavelength of 633 nm when this high refractive index material was measured with a spectroscopic ellipsometer was about 1.85. This material was used as a high refractive index material for the waveguide.

先ず、ＣＣＤ用ウェーハの遮光膜１４上にＢＰＳＧを成膜、リフローさせて比較的屈折率が低いＳｉＯ2 系酸化膜の層間膜１５Ａを形成し、この層間膜１５Ａのフォトダイオード１２の受光面１２Ａに対応した位置に円形貫通孔をエッチングで形成した。 First, BPSG is formed and reflowed on the light shielding film 14 of the CCD wafer to form an interlayer film 15A of a SiO 2 oxide film having a relatively low refractive index, and the light receiving surface 12A of the photodiode 12 of the interlayer film 15A. A circular through hole was formed by etching at a position corresponding to.

次に、この層間膜１５Ａ上に前述の高屈折率材料を円形貫通孔を埋設するようにスピンコータで塗布し、乾燥後紫外線を照射して硬化させ高屈折率層を形成し、図４に示すような導波路１６Ｂを形成した。その後通常のプロセスでカラーフィルタ１７及びオンチップレンズ１８を形成して固体撮像素子１０Ｂを完成させた。   Next, on the interlayer film 15A, the above-described high refractive index material is applied by a spin coater so as to embed a circular through hole, dried, and then cured by irradiation with ultraviolet rays to form a high refractive index layer, as shown in FIG. Such a waveguide 16B was formed. Thereafter, the color filter 17 and the on-chip lens 18 were formed by a normal process to complete the solid-state imaging device 10B.

図８は、このようにして製造した固体撮像素子１０Ｂと従来のプラズマＣＶＤ法にてＳｉＮを埋設して導波路を形成した場合とで、各評価項目毎に比較した評価結果を表わした一覧表である。   FIG. 8 is a list showing the evaluation results compared for each evaluation item in the solid-state imaging device 10B manufactured in this way and the case where a waveguide is formed by embedding SiN by the conventional plasma CVD method. It is.

図８に示すように、実施例３の固体撮像素子１０Ｂは、プラズマＣＶＤ法によるＳｉＮ成膜と比較して評価項目のボイドにおいて大きく改善されており、光学特性を表わすＧ感度、色シェーディング、スミアの全てにおいても大幅に改善され、また、製造コストも安価であった。   As shown in FIG. 8, the solid-state imaging device 10B of Example 3 is greatly improved in evaluation item voids as compared with the SiN film formation by the plasma CVD method, and exhibits G sensitivity, color shading, and smear representing optical characteristics. In all cases, the production cost was significantly improved and the production cost was low.

以上説明したように、本発明の固体撮像素子及びその製造方法によれば、金属酸化物微粒子を分散させた可視光透過性感光性レジスト又は可視光透過性レジストからなる高屈折率材料を塗布して層内レンズ１６、１６Ａ又は導波路１６Ｂを形成するので、アスペクト比の大きな凹部に対するカバレッジがよくボイドが発生しない。   As described above, according to the solid-state imaging device and the manufacturing method thereof of the present invention, a visible light transmissive photosensitive resist in which metal oxide fine particles are dispersed or a high refractive index material made of a visible light transmissive resist is applied. Since the inner lenses 16 and 16A or the waveguide 16B are formed, the coverage for the concave portion having a large aspect ratio is good and no void is generated.

また、金属酸化物微粒子の添加量を調整することで高屈折率材料の屈折率を調整するので、容易に所望の屈折率を有した材料を成膜することができる。更に塗布による成膜のため上面平坦化プロセスを省略することができることと高価な装置が不要なため、従来の固体撮像素子と比較して製造コストを抑制することができる。   In addition, since the refractive index of the high refractive index material is adjusted by adjusting the addition amount of the metal oxide fine particles, a material having a desired refractive index can be easily formed. Furthermore, since the upper surface flattening process can be omitted for film formation by coating and an expensive apparatus is unnecessary, the manufacturing cost can be suppressed as compared with a conventional solid-state imaging device.

なお、前述の実施形態では、固体撮像素子をＣＣＤタイプの固体撮像素子で説明したが、本発明はＣＣＤに限るものではなく、Ｃ−ＭＯＳタイプ等の固体撮像素子であってもよい。   In the above-described embodiment, the solid-state imaging device has been described as a CCD type solid-state imaging device. However, the present invention is not limited to a CCD, and may be a solid-state imaging device such as a C-MOS type.

また、第１の実施形態の変形例において、層内レンズ１６を３層構造で説明したが、３層に限らず他の複数層で形成してもよい。また、層内レンズ１６とカラーフィルタ１７間に複数層形成してもよく、その場合は屈折率の高い材料から順に成膜するようにする。   Further, in the modification of the first embodiment, the inner lens 16 has been described with a three-layer structure, but the inner lens 16 is not limited to three layers and may be formed with other plural layers. In addition, a plurality of layers may be formed between the inner lens 16 and the color filter 17, and in this case, the layers are formed in order from a material having a high refractive index.

本発明に係る固体撮像素子の第１の実施形態を表わす部分断面図1 is a partial cross-sectional view showing a first embodiment of a solid-state imaging device according to the present invention. 第１の実施形態に係る固体撮像素子の製造方法を説明するフローチャート1 is a flowchart for explaining a method of manufacturing a solid-state imaging device according to the first embodiment. 第１の実施形態の変形例を表わす部分断面図Partial sectional view showing a modification of the first embodiment 本発明に係る固体撮像素子の第２の実施形態を表わす部分断面図The fragmentary sectional view showing 2nd Embodiment of the solid-state image sensor which concerns on this invention 第２の実施形態に係る固体撮像素子の製造方法を説明するフローチャートFlowchart for explaining a method for manufacturing a solid-state imaging device according to the second embodiment. 実施例１の評価結果を表わす一覧表Table showing evaluation results of Example 1 実施例２の評価結果を表わす一覧表Table showing evaluation results of Example 2 実施例３の評価結果を表わす一覧表Table showing evaluation results of Example 3

符号の説明Explanation of symbols

１０、１０Ａ，１０Ｂ…固体撮像素子、１２…フォトダイオード（受光部）、１２Ａ…受光面、１３…転送電極、１４…遮光膜、１４Ａ…開口部、１５…オーバーコート層（下地層）、１５Ａ…層間膜（下地層）、１６、１６Ａ…層内レンズ（中間層）、１６Ｂ…導波路（中間層）、１７…カラーフィルタ、１８…オンチップレンズ   DESCRIPTION OF SYMBOLS 10, 10A, 10B ... Solid-state image sensor, 12 ... Photodiode (light-receiving part), 12A ... Light-receiving surface, 13 ... Transfer electrode, 14 ... Light-shielding film, 14A ... Opening part, 15 ... Overcoat layer (underlayer), 15A ... Interlayer film (underlayer) 16, 16A ... In-layer lens (intermediate layer), 16B ... Waveguide (intermediate layer), 17 ... Color filter, 18 ... On-chip lens

Claims (10)

光電変換を行う受光部と、該受光部の受光面に対する開口部を有した遮光膜と、カラーフィルタとを備えた固体撮像素子において、
前記受光部の受光面とカラーフィルタとの間に、レジストに金属酸化物微粒子を分散させてなる高屈折率材料で形成された中間層が介在していることを特徴とする固体撮像素子。 In a solid-state imaging device including a light receiving unit that performs photoelectric conversion, a light shielding film that has an opening with respect to a light receiving surface of the light receiving unit, and a color filter,
A solid-state imaging device, wherein an intermediate layer formed of a high refractive index material in which metal oxide fine particles are dispersed in a resist is interposed between a light receiving surface of the light receiving portion and a color filter. 前記中間層が、前記受光部の受光面に向かって凸形状に形成され凸形状の断面の幅寸法に対する深さ寸法の割合で定義されるアスペクト比が０．２以上の層内レンズ、又は円柱状に形成され直径に対する長さの割合で定義されるアスペクト比が０．２以上の導波路であることを特徴とする請求項１に記載の固体撮像素子。   The intermediate layer is formed in a convex shape toward the light receiving surface of the light receiving portion, and an intralayer lens having an aspect ratio defined by a ratio of a depth dimension to a width dimension of a convex cross section or a circle 2. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is a waveguide formed in a columnar shape and having an aspect ratio defined by a ratio of a length to a diameter of 0.2 or more. 前記中間層が、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させてなる波長６３３ｎｍの光に対する屈折率が１．６以上の高屈折率材料で形成された層内レンズ又は導波路であることを特徴とする請求項１に記載の固体撮像素子。   The intermediate layer is a visible light transmitting photosensitive resist or a layer formed of a high refractive index material having a refractive index of 1.6 or more with respect to light having a wavelength of 633 nm obtained by dispersing metal oxide fine particles in a visible light transmitting resist. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is an inner lens or a waveguide. 前記層内レンズは、屈折率の異なる複数の材料が積層して形成されていることを特徴とする請求項３に記載の固体撮像素子。   The solid-state imaging device according to claim 3, wherein the intra-layer lens is formed by laminating a plurality of materials having different refractive indexes. 光電変換を行う受光部と、該受光部の受光面に対する開口部を有した遮光膜と、カラーフィルタとを備えた固体撮像素子の製造方法において、
前記受光部の受光面とカラーフィルタとの間に、レジストに金属酸化物微粒子を分散させてなる高屈折率材料で中間層を形成する工程を含むことを特徴とする固体撮像素子の製造方法。 In a method for manufacturing a solid-state imaging device comprising a light receiving unit that performs photoelectric conversion, a light shielding film having an opening with respect to a light receiving surface of the light receiving unit, and a color filter,
A method for manufacturing a solid-state imaging device, comprising: forming an intermediate layer with a high refractive index material in which metal oxide fine particles are dispersed in a resist between a light receiving surface of the light receiving portion and a color filter. 前記中間層が、前記受光部の受光面に向かって凸形状に形成され凸形状の断面の幅寸法に対する深さ寸法の割合で定義されるアスペクト比が０．２以上の層内レンズ、又は円柱状に形成され直径に対する長さの割合で定義されるアスペクト比が０．２以上の導波路であることを特徴とする請求項５に記載の固体撮像素子の製造方法。   The intermediate layer is formed in a convex shape toward the light receiving surface of the light receiving portion, and an intralayer lens having an aspect ratio defined by a ratio of a depth dimension to a width dimension of a convex cross section or a circle 6. The method for manufacturing a solid-state imaging device according to claim 5, wherein the waveguide is formed in a columnar shape and has an aspect ratio defined by a ratio of a length to a diameter of 0.2 or more. 前記中間層が、可視光透過性感光性レジスト又は可視光透過性レジストに金属酸化物微粒子を分散させてなる波長６３３ｎｍの光に対する屈折率が１．６以上の高屈折率材料で形成された層内レンズ又は導波路であることを特徴とする請求項５に記載の固体撮像素子の製造方法。   The intermediate layer is a visible light transmitting photosensitive resist or a layer formed of a high refractive index material having a refractive index of 1.6 or more with respect to light having a wavelength of 633 nm obtained by dispersing metal oxide fine particles in a visible light transmitting resist. 6. The method for manufacturing a solid-state imaging device according to claim 5, wherein the method is an inner lens or a waveguide. 前記層内レンズを、屈折率の異なる複数の材料を積層して形成したことを特徴とする請求項７に記載の固体撮像素子の製造方法。   The method for manufacturing a solid-state imaging device according to claim 7, wherein the intra-layer lens is formed by laminating a plurality of materials having different refractive indexes. 前記金属酸化物微粒子の添加量を変化させることによって、前記高屈折率材料の屈折率を所望の値に調整することを特徴とする請求項５、６、７、又は８の内いずれか１項に記載の固体撮像素子の製造方法。   9. The refractive index of the high refractive index material is adjusted to a desired value by changing the addition amount of the metal oxide fine particles. The manufacturing method of the solid-state image sensor as described in 1 .. 前記高屈折率材料を下地層の上に塗布することによって、前記中間層を成膜することを特徴とする請求項５、６、７、８、又は９の内いずれか１項に記載の固体撮像素子の製造方法。   10. The solid according to claim 5, wherein the intermediate layer is formed by applying the high refractive index material on an underlayer. Manufacturing method of imaging device.
JP2004346869A 2004-11-30 2004-11-30 Solid-state image sensor and its manufacturing method Withdrawn JP2006156799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004346869A JP2006156799A (en) 2004-11-30 2004-11-30 Solid-state image sensor and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004346869A JP2006156799A (en) 2004-11-30 2004-11-30 Solid-state image sensor and its manufacturing method

Publications (1)

Publication Number Publication Date
JP2006156799A true JP2006156799A (en) 2006-06-15

Family

ID=36634678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004346869A Withdrawn JP2006156799A (en) 2004-11-30 2004-11-30 Solid-state image sensor and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2006156799A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159748A (en) * 2006-12-22 2008-07-10 Toppan Printing Co Ltd Method for manufacturing solid-state image sensing device and solid-state image sensing device
JP2008277793A (en) * 2007-03-30 2008-11-13 Fujifilm Corp Semiconductor element, and method for manufacturing semiconductor element
JP2010278276A (en) * 2009-05-29 2010-12-09 Sony Corp Solid-state imaging device, method of manufacturing solid-state imaging device and electronic equipment
JP2012004368A (en) * 2010-06-17 2012-01-05 Panasonic Corp Solid state image pickup device and method of manufacturing the same
JP2012084815A (en) * 2010-10-14 2012-04-26 Sharp Corp Solid-state imaging apparatus and electronic information device
US8890055B2 (en) 2008-12-03 2014-11-18 Sony Corporation Solid-state imaging device, method of producing the same, and camera
JP2017069553A (en) * 2015-09-30 2017-04-06 キヤノン株式会社 Solid-state imaging device, method of manufacturing the same, and camera
JP2017212292A (en) * 2016-05-24 2017-11-30 凸版印刷株式会社 Solid-state image sensor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086778A (en) * 2001-09-11 2003-03-20 Sharp Corp Semiconductor device and manufacturing method therefor
JP2004221487A (en) * 2003-01-17 2004-08-05 Sharp Corp Semiconductor device and method for manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086778A (en) * 2001-09-11 2003-03-20 Sharp Corp Semiconductor device and manufacturing method therefor
JP2004221487A (en) * 2003-01-17 2004-08-05 Sharp Corp Semiconductor device and method for manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159748A (en) * 2006-12-22 2008-07-10 Toppan Printing Co Ltd Method for manufacturing solid-state image sensing device and solid-state image sensing device
JP2008277793A (en) * 2007-03-30 2008-11-13 Fujifilm Corp Semiconductor element, and method for manufacturing semiconductor element
US20110294247A1 (en) * 2007-03-30 2011-12-01 Kikuchi Tomoyuki Solid-state imaging element and method for manufacturing the same
US8890055B2 (en) 2008-12-03 2014-11-18 Sony Corporation Solid-state imaging device, method of producing the same, and camera
JP2010278276A (en) * 2009-05-29 2010-12-09 Sony Corp Solid-state imaging device, method of manufacturing solid-state imaging device and electronic equipment
JP2012004368A (en) * 2010-06-17 2012-01-05 Panasonic Corp Solid state image pickup device and method of manufacturing the same
JP2012084815A (en) * 2010-10-14 2012-04-26 Sharp Corp Solid-state imaging apparatus and electronic information device
JP2017069553A (en) * 2015-09-30 2017-04-06 キヤノン株式会社 Solid-state imaging device, method of manufacturing the same, and camera
US10008528B2 (en) 2015-09-30 2018-06-26 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2021180330A (en) * 2015-09-30 2021-11-18 キヤノン株式会社 Solid-state imaging device, method of manufacturing the same, and camera
JP2017212292A (en) * 2016-05-24 2017-11-30 凸版印刷株式会社 Solid-state image sensor

Similar Documents

Publication Publication Date Title
JP5736755B2 (en) SOLID-STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE
TWI278991B (en) Solid image-pickup device and method of manufacturing the same
CN100474604C (en) CMOS image sensor and method for fabricating the same
US7595215B2 (en) CMOS image sensor and method for manufacturing the same
US7491993B2 (en) CMOS image sensor and method for manufacturing the same
US7427799B2 (en) Complementary metal oxide semiconductor image sensor and method for fabricating the same
JP2007053153A (en) Solid imaging element and its manufacturing method
JP2009021379A (en) Solid-state imaging apparatus and camera equipped with the same, and manufacturing method of solid-state imaging apparatus
US7297570B2 (en) Complementary metal oxide semiconductor image sensor and method for fabricating the same
US7611922B2 (en) Image sensor and method for manufacturing the same
WO2020122032A1 (en) Solid-state imaging device and method for producing solid-state imaging device
JP6243498B1 (en) Imaging device
US20070102716A1 (en) Image sensor and fabricating method thereof
JP2013012518A (en) Solid state imaging device
KR100628235B1 (en) CMOS Image sensor and Method for fabricating of the same
US20070145422A1 (en) CMOS Image Sensor and Manufacturing Method Thereof
JP2006156799A (en) Solid-state image sensor and its manufacturing method
US20060138487A1 (en) CMOS image sensor and method for fabricating the same
US20090305453A1 (en) Method of fabricating image sensor device
KR100672702B1 (en) CMOS Image sensor and Method for fabricating of the same
WO2018193986A1 (en) Solid-state imaging element and method for manufacturing same
JP4725106B2 (en) Manufacturing method of solid-state imaging device
KR100685874B1 (en) CMOS image sensor and method for manufacturing the same
JP2006190904A (en) Solid-state image pickup element
JP4935118B2 (en) Image sensor manufacturing method and image sensor

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20070109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070615

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100430

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110530

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20110607