JP2006129298A5 - - Google Patents

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JP2006129298A5
JP2006129298A5 JP2004317088A JP2004317088A JP2006129298A5 JP 2006129298 A5 JP2006129298 A5 JP 2006129298A5 JP 2004317088 A JP2004317088 A JP 2004317088A JP 2004317088 A JP2004317088 A JP 2004317088A JP 2006129298 A5 JP2006129298 A5 JP 2006129298A5
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photoelectric conversion
analog
semiconductor substrate
solid
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JP2004317088A
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Japanese (ja)
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JP2006129298A (en
JP4270105B2 (en
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Claims (4)

半導体基板の裏面側に臨む光電変換素子と表面側に形成したセンサトランジスタとからなる画素を複数備え、
各画素毎にアナログ／デジタル変換手段及びメモリ手段が接続され、
全画素の光電変換素子の信号を同時に前記アナログ／デジタル変換手段にてアナログ／デジタル変換した後、前記メモリ手段にデータとして保持するようにして成る
ことを特徴とする固体撮像素子。 A plurality of pixels comprising a photoelectric conversion element facing the back side of the semiconductor substrate and a sensor transistor formed on the front side,
Analog / digital conversion means and memory means are connected for each pixel,
A solid-state imaging device , wherein signals of photoelectric conversion elements of all the pixels are simultaneously subjected to analog / digital conversion by the analog / digital conversion means and then held as data in the memory means. 前記半導体基板の裏面側に臨んで光電変換素子領域が形成され、
前記半導体基板の表面側にセンサトランジスタ領域と、各画素毎に接続されたアナログ／デジタル変換回路領域と、メモリ素子もしくは容量素子からなるメモリ回路領域が形成され、
入射光を前記半導体基板の裏面画から光電変換素子に入射するようにして成る
ことを特徴とする請求項１記載の固体撮像素子。 A photoelectric conversion element region is formed facing the back side of the semiconductor substrate,
A sensor transistor region, an analog / digital conversion circuit region connected to each pixel, and a memory circuit region including a memory element or a capacitor element are formed on the surface side of the semiconductor substrate.
The solid-state imaging device according to claim 1, wherein incident light is incident on a photoelectric conversion device from a back surface image of the semiconductor substrate. 前記光電変換素子領域が前記センサトランジスタ領域下まで延長して形成されて成る
ことを特徴とする請求項２記載の固体撮像素子。 The solid-state imaging device according to claim 2, wherein the photoelectric conversion element region is formed so as to extend below the sensor transistor region. 前記光電変換素子領域が、前記センサトランジスタ領域と前記アナログ／デジタル変換回路領域と前記メモリ回路領域の下まで延長して形成されて成る
ことを特徴とする請求項２記載の固体撮像素子。 The solid-state imaging device according to claim 2, wherein the photoelectric conversion element region is formed to extend below the sensor transistor region, the analog / digital conversion circuit region, and the memory circuit region.
JP2004317088A 2004-10-29 2004-10-29 Solid-state image sensor Active JP4270105B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004317088A JP4270105B2 (en) 2004-10-29 2004-10-29 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004317088A JP4270105B2 (en) 2004-10-29 2004-10-29 Solid-state image sensor

Publications (3)

Publication Number Publication Date
JP2006129298A JP2006129298A (en) 2006-05-18
JP2006129298A5 true JP2006129298A5 (en) 2007-08-23
JP4270105B2 JP4270105B2 (en) 2009-05-27

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JP2004317088A Active JP4270105B2 (en) 2004-10-29 2004-10-29 Solid-state image sensor

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008172580A (en) * 2007-01-12 2008-07-24 Toshiba Corp Solid-state imaging element, and solid-state imaging apparatus
JP2009068863A (en) * 2007-09-10 2009-04-02 Toshiba Corp Infrared detecting element and infrared image sensor using it
JP4609497B2 (en) * 2008-01-21 2011-01-12 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and camera
US8101978B2 (en) * 2008-02-08 2012-01-24 Omnivision Technologies, Inc. Circuit and photo sensor overlap for backside illumination image sensor
JP4886721B2 (en) * 2008-03-18 2012-02-29 日本放送協会 Stereo imaging device and stereoscopic display device
US9142586B2 (en) * 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
JP5836581B2 (en) * 2010-10-04 2015-12-24 キヤノン株式会社 Manufacturing method of solid-state imaging device
JP6053333B2 (en) 2012-05-31 2016-12-27 キヤノン株式会社 Imaging device, imaging system, and driving method of imaging device
DE102013206404B3 (en) * 2013-04-11 2014-03-06 Siemens Aktiengesellschaft Sensor chip, computer tomographic detector having this, as well as a manufacturing method and an operating method therefor
JP2018011304A (en) * 2017-07-31 2018-01-18 株式会社ニコン Imaging device
JP6611779B2 (en) * 2017-11-08 2019-11-27 キヤノン株式会社 Solid-state imaging device and imaging system
JP6929337B2 (en) * 2017-11-08 2021-09-01 キヤノン株式会社 Solid-state image sensor and imaging system
JP7358300B2 (en) * 2019-08-15 2023-10-10 株式会社ニコン Image sensor

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