JP2006120737A - Photoelectric conversion element - Google Patents

Photoelectric conversion element Download PDF

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JP2006120737A
JP2006120737A JP2004304752A JP2004304752A JP2006120737A JP 2006120737 A JP2006120737 A JP 2006120737A JP 2004304752 A JP2004304752 A JP 2004304752A JP 2004304752 A JP2004304752 A JP 2004304752A JP 2006120737 A JP2006120737 A JP 2006120737A
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layer
photoelectric conversion
conversion element
refractive index
back electrode
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Yasuyuki Kobayashi
靖之 小林
Tomotsugu Sakai
智嗣 坂井
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Mitsubishi Heavy Industries Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that can improve the efficiency of a thin-film Si solar battery. <P>SOLUTION: In the photoelectric conversion element, a refractive index adjusting layer composed of a material having a refractive index lower than that of a transparent conductive film provided on the surface side of a rear electrode is inserted between the rear electrode and transparent conductive film. When, for example, the transparent conductive film is a GZO, SiO<SB>2</SB>is inserted between the film and the rear electrode composed of Ag. Consequently, the light infiltrated into and absorbed by the rear electrode is reduced and the light reflectance of the rear electrode is improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、光電変換素子の効率を高くする技術に関する。   The present invention relates to a technique for increasing the efficiency of a photoelectric conversion element.

特許文献１には、光入射面の反対側に設けられた裏面電極と半導体からなる光電変換層との間に、透明導電層を有する光起電力素子において、該透明導電層に導電率を変化させる元素を含有させ、該元素の添加量が膜厚方向で変化していることを特徴とする光起電力素子が開示されている。この特許文献の［００２３］から［００２４］には、次の記載がある。   In Patent Document 1, in a photovoltaic device having a transparent conductive layer between a back electrode provided on the opposite side of the light incident surface and a photoelectric conversion layer made of a semiconductor, the conductivity of the transparent conductive layer is changed. There is disclosed a photovoltaic element characterized in that the element to be contained is contained and the amount of the element added varies in the film thickness direction. [0023] to [0024] of this patent document include the following description.

「また前記元素の添加量を前記半導体層との界面に近づくにつれた少なくともある膜厚の範囲にわたって単調に減少させることによって、光起電力素子の長波長感度が増大し、短絡電流が増大して、光電変換効率が上昇した。   “Also, by monotonically reducing the amount of the element added over at least a certain film thickness range as it approaches the interface with the semiconductor layer, the long wavelength sensitivity of the photovoltaic device increases and the short circuit current increases. The photoelectric conversion efficiency increased.

この効果については、前記元素の添加量を前記裏面電極との界面に近づくにつれて単調に減少させることによって、前記導電性酸化物の屈折率が前記裏面電極との界面に近づくにつれて単調に減少し、透明電極層と半導体層の界面での反射が減少して、半導体層への長波長光の入射が増大したものと考えられる。」   About this effect, the refractive index of the conductive oxide decreases monotonously as it approaches the interface with the back electrode by monotonically decreasing the amount of the element added as it approaches the interface with the back electrode, It is considered that the reflection at the interface between the transparent electrode layer and the semiconductor layer decreased, and the incidence of long wavelength light on the semiconductor layer increased. "

特許文献２には、光入射面の反対側に形成された光反射性の裏面電極と、一導電型を示す半導体層との間に、複数の元素の化合物からなる透明導電層を有する光起電力素子において、前記透明導電層を形成する化合物は導電性酸化物であり、該導電性酸化物の酸素の組成比が膜厚方向において連続的に変化する領域を含むことを特徴とする光起電力素子が開示されている。   Patent Document 2 discloses a photovoltaic device having a transparent conductive layer made of a compound of a plurality of elements between a light-reflecting back electrode formed on the opposite side of the light incident surface and a semiconductor layer having one conductivity type. In the power element, the compound forming the transparent conductive layer is a conductive oxide, and includes a region in which the oxygen composition ratio of the conductive oxide continuously changes in the film thickness direction. A power device is disclosed.

特開平５−１１０１２５号公報Japanese Patent Laid-Open No. 5-110125 特許第２８４６５０８号公報Japanese Patent No. 2846508

本発明の目的は、薄膜Ｓｉ太陽電池（光電変換素子）を高効率化することである。
本発明の目的をより詳細に述べると、上記目的を達成するために、裏面電極層に侵入し吸収される電磁波を低減することである。 An object of the present invention is to increase the efficiency of a thin-film Si solar cell (photoelectric conversion element).
The object of the present invention will be described in more detail. In order to achieve the above object, it is to reduce electromagnetic waves that penetrate into the back electrode layer and are absorbed.

以下に、［発明を実施するための最良の形態］で使用される番号を括弧付きで用いて、課題を解決するための手段を説明する。これらの番号は、［特許請求の範囲］の記載と［発明を実施するための最良の形態］との対応関係を明らかにするために付加されたものである。ただし、それらの番号を、［特許請求の範囲］に記載されている発明の技術的範囲の解釈に用いてはならない。   In the following, means for solving the problem will be described using the numbers used in [Best Mode for Carrying Out the Invention] in parentheses. These numbers are added to clarify the correspondence between the description of [Claims] and [Best Mode for Carrying Out the Invention]. However, these numbers should not be used to interpret the technical scope of the invention described in [Claims].

本発明による光電変換素子は、透光性基板（１）と、透光性基板（１）の主面側に形成され、受光した光を電力に変換する光電変換層（７）と、主面側に形成され、該光電変換素子に外光が入射する側と反対側に形成された裏面電極層（２）と、光電変換層（７）と裏面電極層（２）との間に形成され、裏面電極層（２）に近い側において裏面電極層（２）から遠い側よりも屈折率が小さい透明層（８、９）とを備えている。   A photoelectric conversion element according to the present invention includes a translucent substrate (1), a photoelectric conversion layer (7) formed on the main surface side of the translucent substrate (1), which converts received light into electric power, and a main surface. A back electrode layer (2) formed on the side opposite to the side on which external light is incident on the photoelectric conversion element, and formed between the photoelectric conversion layer (7) and the back electrode layer (2). And a transparent layer (8, 9) having a refractive index smaller on the side closer to the back electrode layer (2) than on the side far from the back electrode layer (2).

本発明による光電変換素子において、透明層（８、９）は、上部透明層（８）と、上部透明層（８）と裏面電極層（２）との間に設けられ、上部透明層（８）よりも屈折率が小さい屈折率調整層（９）とを備えている。   In the photoelectric conversion element according to the present invention, the transparent layers (8, 9) are provided between the upper transparent layer (8), the upper transparent layer (8), and the back electrode layer (2), and the upper transparent layer (8 ) And a refractive index adjustment layer (9) having a refractive index smaller than that.

本発明による光電変換素子において、上部透明層（８）はＺｎＯ、ＩＴＯ、又はＳｎＯ２のうちのいずれかを含んでいる。ＺｎＯには、Ｇａ、Ｓｉ、Ａｌ、Ｂのうちのいずれかがドーピングされている。 In the photoelectric conversion element according to the present invention, the upper transparent layer (8) contains ZnO, ITO, or any of the SnO 2. ZnO is doped with any of Ga, Si, Al, and B.

本発明による光電変換素子において、屈折率調整層（９）はＳｉＯ２、ＭｇＦ２、ＭｇＯ、ガラス、Ａｌ２Ｏ３、Ｙ２Ｏ３、ＣａＦ２、ＬｉＦ、空孔のうちのいずれかを含む。 In the photoelectric conversion element according to the present invention, the refractive index adjustment layer (9) includes any of SiO 2 , MgF 2 , MgO, glass, Al 2 O 3 , Y 2 O 3 , CaF 2 , LiF, and holes. .

本発明による光電変換素子において、屈折率調整層（９）は、第１材料と第２材料との混合相を含んでいる。第１材料は、ＳｉＯ２、ＭｇＦ２、ＭｇＯ、ガラス、Ａｌ２Ｏ３、Ｙ２Ｏ３、ＣａＦ２、及びＬｉＦのうちから選択される。第２材料は、ＺｎＯ、ＩＴＯ、及びＳｎＯ２のうちから選択される。ＺｎＯにはＧａ、Ｓｉ、Ａｌ、Ｂのうちのいずれかがドーピングされている。 In the photoelectric conversion element according to the present invention, the refractive index adjustment layer (9) includes a mixed phase of the first material and the second material. The first material is selected from SiO 2 , MgF 2 , MgO, glass, Al 2 O 3 , Y 2 O 3 , CaF 2 , and LiF. The second material is selected ZnO, ITO, and from among the SnO 2. ZnO is doped with any of Ga, Si, Al, and B.

本発明による光電変換素子において、裏面電極層（２）はＡｇ、Ａｌ、Ｃｕ、Ａｕのいずれかを含む。   In the photoelectric conversion element according to the present invention, the back electrode layer (2) contains one of Ag, Al, Cu, and Au.

本発明による光電変換素子において、屈折率調整層（９）は、厚さが２ナノメートル以上である。より好ましくは、厚さが１０ナノメートル以上である。   In the photoelectric conversion element according to the present invention, the refractive index adjusting layer (9) has a thickness of 2 nanometers or more. More preferably, the thickness is 10 nanometers or more.

本発明による光電変換素子において、透明層（８、９）は３層以上の層構造をしている。層構造のなかの任意の層である上側透明層の屈折率は、上側透明層と裏面電極層との間の任意の層である下側透明層の屈折率よりも大きい。   In the photoelectric conversion element according to the present invention, the transparent layers (8, 9) have a layer structure of three or more layers. The refractive index of the upper transparent layer that is an arbitrary layer in the layer structure is larger than the refractive index of the lower transparent layer that is an arbitrary layer between the upper transparent layer and the back electrode layer.

本発明による光電変換素子において、光電変換層（７）は多結晶質シリコンを含んでいる。本発明による光電変換素子は更に、光電変換層（７）に対して裏面電極層（２）の反対側に、アモルファスシリコンを含む光起電力層（５）を含んでいる。   In the photoelectric conversion element according to the present invention, the photoelectric conversion layer (7) contains polycrystalline silicon. The photoelectric conversion element according to the present invention further includes a photovoltaic layer (5) containing amorphous silicon on the opposite side of the back electrode layer (2) with respect to the photoelectric conversion layer (7).

本発明による光電変換素子において、光電変換層（７）はシリコンとシリコン以外のＩＶ族元素（例示：Ｇｅ）との合金を含む。   In the photoelectric conversion element according to the present invention, the photoelectric conversion layer (7) includes an alloy of silicon and a group IV element (eg, Ge) other than silicon.

本発明による光電変換素子は、光電変換層（７）と光起電力層（５）との間に、多結晶質シリコンを含む第２光電変換層（１０）を含む。   The photoelectric conversion element according to the present invention includes a second photoelectric conversion layer (10) containing polycrystalline silicon between the photoelectric conversion layer (7) and the photovoltaic layer (5).

本発明による光電変換素子において、第２光電変換層（１０）はシリコンとシリコン以外のＩＶ族元素（例示：Ｇｅ）との合金を含む。   In the photoelectric conversion element according to the present invention, the second photoelectric conversion layer (10) includes an alloy of silicon and a group IV element (eg, Ge) other than silicon.

本発明による光電変換素子は、不透光性基板と、不透光性基板の主面側に形成された裏面電極層と、主面側に形成され、受光した光を電力に変換する光電変換層と、主面側に形成された透明電極層とを備えている。入射光は透明電極層の側から取り入れられる。本発明による光電変換素子は更に、該光電変換素子に外光が入射する側と反対側に形成された裏面電極層と光電変換層との間に形成され、裏面電極層に近い側において裏面電極層から遠い側よりも屈折率が小さい透明層とを備えている。   The photoelectric conversion element according to the present invention includes a light-impermeable substrate, a back electrode layer formed on the main surface side of the light-impermeable substrate, and a photoelectric conversion formed on the main surface side that converts received light into electric power. And a transparent electrode layer formed on the main surface side. Incident light is taken from the transparent electrode layer side. The photoelectric conversion element according to the present invention is further formed between a back electrode layer formed on the side opposite to the side where external light enters the photoelectric conversion element and the photoelectric conversion layer, and on the side close to the back electrode layer, the back electrode And a transparent layer having a refractive index smaller than that of the side far from the layer.

本発明によれば、薄膜Ｓｉ太陽電池（光電変換素子）が高効率化される。
より詳細には、本発明によれば、上記目的を達成するために、裏面電極層に侵入し吸収される電磁波が低減される。 According to the present invention, the efficiency of a thin film Si solar cell (photoelectric conversion element) is improved.
More specifically, according to the present invention, in order to achieve the above object, electromagnetic waves that enter the back electrode layer and are absorbed are reduced.

以下、図面を参照しながら本発明を実施するための最良の形態について説明する。   The best mode for carrying out the present invention will be described below with reference to the drawings.

図１を参照すると、光電変換素子の断面図が示されている。光電変換素子は、光入射側のガラス基板１と裏面不透明電極２との間に、多層の発電層３が形成されている。発電層３は、第１透明（光透過性）導電膜４と、トップセル層５と、中間層６と、ボトムセル層７と、第２透明導電膜８と、屈折率調整層９の６層の積層構造として形成されている。第１透明導電膜４は、ガラス基板１の裏面側に接合している。トップセル層５は、第１透明導電膜４の裏面側に接合している。中間層６は、トップセル層５の裏面側に接合している。ボトムセル層７は、中間層６の裏面側に接合している。第２透明導電膜８は、ボトムセル層７の裏面側に接合している。屈折率調整層９は、第２透明導電膜８の裏面側に接合している。裏面不透明電極２は、屈折率調整層９の裏面側に接合している。   Referring to FIG. 1, a cross-sectional view of a photoelectric conversion element is shown. In the photoelectric conversion element, a multilayer power generation layer 3 is formed between a glass substrate 1 on the light incident side and a back surface opaque electrode 2. The power generation layer 3 includes six layers of a first transparent (light transmissive) conductive film 4, a top cell layer 5, an intermediate layer 6, a bottom cell layer 7, a second transparent conductive film 8, and a refractive index adjustment layer 9. It is formed as a laminated structure. The first transparent conductive film 4 is bonded to the back side of the glass substrate 1. The top cell layer 5 is bonded to the back side of the first transparent conductive film 4. The intermediate layer 6 is bonded to the back surface side of the top cell layer 5. The bottom cell layer 7 is bonded to the back side of the intermediate layer 6. The second transparent conductive film 8 is bonded to the back surface side of the bottom cell layer 7. The refractive index adjustment layer 9 is bonded to the back side of the second transparent conductive film 8. The back surface opaque electrode 2 is bonded to the back surface side of the refractive index adjustment layer 9.

図２を参照すると、ボトムセル層７、第２透明導電膜８、屈折率調整層９、及び裏面不透明電極２の部分を拡大した断面図が示されている。光電変換素子の裏面不透明電極２の付近の層の材質は、本実施の形態では、ボトムセル層７がｃ−Ｓｉ若しくはμｃ−Ｓｉ（微結晶シリコン）、第２透明導電膜８がＧａドープＺｎＯ（ＧＺＯ）、裏面不透明電極２がＡｇである。本発明においては第２透明導電層膜８と裏面不透明電極２との間に屈折率調整層９が存在している。屈折率調整層９の材質Ｘに関しては後述する。   Referring to FIG. 2, an enlarged cross-sectional view of the bottom cell layer 7, the second transparent conductive film 8, the refractive index adjustment layer 9, and the back surface opaque electrode 2 is shown. In this embodiment, the material of the layer near the back surface opaque electrode 2 of the photoelectric conversion element is c-Si or μc-Si (microcrystalline silicon) for the bottom cell layer 7 and Ga-doped ZnO (second transparent conductive film 8). GZO), and the back surface opaque electrode 2 is Ag. In the present invention, the refractive index adjusting layer 9 exists between the second transparent conductive layer film 8 and the back surface opaque electrode 2. The material X of the refractive index adjustment layer 9 will be described later.

屈折率調整層９が存在しない場合、太陽電池（光電変換素子）の裏面電極付近の層構造は例えば、Ｓｉ発電膜／ＧＺＯ／Ａｇである。平滑なガラス基板に成膜したＧＺＯ／Ａｇ膜の長波長域における光学反射率は充分に高い（Ｒ＝９５％以上）。すなわちＧＺＯ膜とＡｇ界面における明瞭な吸収損失は認められない。ガラス基板上の裏面電極の反射率計測はほぼ垂直入射条件である。この場合、偏光依存性は生じない。   When the refractive index adjustment layer 9 does not exist, the layer structure near the back electrode of the solar cell (photoelectric conversion element) is, for example, Si power generation film / GZO / Ag. The optical reflectance in the long wavelength region of the GZO / Ag film formed on a smooth glass substrate is sufficiently high (R = 95% or more). That is, no clear absorption loss is observed at the GZO film and Ag interface. The reflectivity measurement of the back electrode on the glass substrate is almost normal incidence condition. In this case, polarization dependence does not occur.

一方、斜め入射の場合、ｓ偏光とｐ偏光と呼ばれる二つの偏光状態について反射特性を考慮する必要がある。特に、ｐ偏光に関しては、ブリュースタ角や誘電体／金属界面における表面プラズモンなどｓ偏光が有しない現象が知られている。   On the other hand, in the case of oblique incidence, it is necessary to consider reflection characteristics for two polarization states called s-polarized light and p-polarized light. In particular, regarding p-polarized light, there are known phenomena that s-polarized light does not have, such as Brewster angle and surface plasmons at the dielectric / metal interface.

金属の反射率は、理想金属ではＲ＝１００％であるが、Ａｇなどの実在する金属は９８％程度が最高である。誘電体／金属の界面で光は反射されるが、実際には、金属側に僅かに電界が侵入している。侵入の深さは数１０ｎｍのオーダーである。侵入の深さは、誘電体の光学定数（屈折率ｎ）と金属の光学定数（ｎ，ｋ）、入射する電磁波の波長λ、入射角θで決まる。金属中に侵入した光の電界強度は界面からの深さに対して指数関数的に減衰する。したがって、誘電体／金属界面の反射における吸収損は電界の侵入深さで決まると考えてよい。   The reflectivity of a metal is R = 100% for an ideal metal, but about 98% is the best for an actual metal such as Ag. Light is reflected at the dielectric / metal interface, but in practice, an electric field slightly penetrates the metal side. The penetration depth is of the order of several tens of nm. The penetration depth is determined by the optical constant (refractive index n) of the dielectric, the optical constant (n, k) of the metal, the wavelength λ of the incident electromagnetic wave, and the incident angle θ. The electric field intensity of light that has entered the metal attenuates exponentially with respect to the depth from the interface. Therefore, it can be considered that the absorption loss in the reflection at the dielectric / metal interface is determined by the penetration depth of the electric field.

本発明の発明者は、屈折率調整層９の材質を変えて、Ａｇの層内部におけるｐ偏光成分の電界強度分布を計算した。計算には、屈折率調整層９の材質Ｘとして、ＧＺＯより屈折率が高い物質の代表としてＴｉＯ２、及びＧＺＯより屈折率が低い物質の代表としてＳｉＯ２を用いた。 The inventor of the present invention calculated the electric field intensity distribution of the p-polarized component in the Ag layer while changing the material of the refractive index adjustment layer 9. The calculation, as the material X of the refractive index adjusting layer 9, TiO 2 as a representative of high material refractive index than GZO, and SiO 2 was used as a representative of a low refractive index material than the GZO.

Ａｇの膜厚は充分にバルクと見なせる８０ｎｍとした。Ａｇの裏面側の空気と、ボトムセル層７のｃ−Ｓｉは半無限媒質とした。ｃ−ＳｉからＧＺＯ界面に対して入射する入射光の入射角はθとする。ＧＺＯ／Ａｇ界面に挿入される媒質Ｘの厚みはｄとする。媒質ＸとＧＺＯの厚みの和は８０ｎｍとした。計算にはサイバネット社のＯＰＴＡＳ−ＦＩＬＭを使用した。Ａｇ層における電界強度の二乗（Ｅ＊Ｅ）を求め、マイクロソフト社のエクセルを使用して電界強度の積分値（＝Ａｇにおける吸収損に比例した量）を求め、グラフ化した。本計算は、薄膜多重干渉効果を考慮した平膜計算である。   The film thickness of Ag was 80 nm which can be regarded as a sufficient bulk. The air on the back side of Ag and the c-Si of the bottom cell layer 7 were semi-infinite media. The incident angle of incident light incident on the GZO interface from c-Si is θ. The thickness of the medium X inserted into the GZO / Ag interface is d. The sum of the thicknesses of the medium X and GZO was 80 nm. Cybernet OPTAS-FILM was used for the calculation. The square of the electric field strength (E * E) in the Ag layer was obtained, and the integrated value of the electric field strength (= an amount proportional to the absorption loss in Ag) was obtained using Microsoft Excel and graphed. This calculation is a flat film calculation considering the thin film multiple interference effect.

以下、図３乃至図６を用いて計算の結果について述べる。以下の説明において「現状の構造」というのは、屈折率調整層９が存在しない構造のことを示す。   Hereinafter, the calculation results will be described with reference to FIGS. In the following description, the “current structure” indicates a structure in which the refractive index adjustment layer 9 does not exist.

図３を参照すると、現状の構造、ＴｉＯ２挿入構造、ＳｉＯ２挿入構造における電界強度分布の計算結果が示されている。入射角５０°、計算波長８００ｎｍ、挿入媒質の膜厚は３０ｎｍの計算結果である。この結果から、ＧＺＯに対して、相対的に屈折率が高い媒質が挿入されると、電界強度分布が深くかつ大きくなり、Ａｇ層での吸収損が大きくなる（すなわち反射率が低下する）。逆に屈折率が低い媒質が挿入されると、Ａｇ層での吸収損を現状の構造よりも低減できることが分かる。 Referring to FIG. 3, the calculation results of the electric field strength distribution in the current structure, the TiO 2 insertion structure, and the SiO 2 insertion structure are shown. The calculation result is an incident angle of 50 °, a calculation wavelength of 800 nm, and a thickness of the insertion medium of 30 nm. From this result, when a medium having a relatively high refractive index is inserted with respect to GZO, the electric field intensity distribution becomes deeper and larger, and the absorption loss in the Ag layer increases (that is, the reflectance decreases). Conversely, when a medium having a low refractive index is inserted, it can be seen that the absorption loss in the Ag layer can be reduced as compared with the current structure.

図４を参照すると、積分電界強度の計算結果がグラフに示されている。挿入媒質の膜厚が３０ｎｍ、計算波長８００ｎｍの計算結果である。３０°から４０°に認められるピークは、表面プラズモン共鳴による吸収増大と推定される。入射角６５°を越えると、積分電界強度が急峻に低下する。これはＳｉ／ＧＺＯ界面の全反射と推定される。   Referring to FIG. 4, the calculation result of the integrated electric field strength is shown in the graph. This is a calculation result when the thickness of the insertion medium is 30 nm and the calculation wavelength is 800 nm. The peak observed from 30 ° to 40 ° is presumed to be an increase in absorption due to surface plasmon resonance. When the incident angle exceeds 65 °, the integrated electric field strength sharply decreases. This is presumed to be total reflection at the Si / GZO interface.

表面プラズモン共鳴現象は、平滑性と入射角が厳密に満たされないと充分に観測されないので、実際の（波長オーダーの凹凸を有する形状の）裏面電極ではシャープな吸収特性は出難いと推定される。そこで、仮定ではあるが、３０°から４０°のピークを無視して図４を見ると、４５°から６５°の入射角範囲において、積分電界強度レベルが屈折率調整層９の材質Ｘの屈折率に応じて変化していると解釈できる。すなわち、ＧＺＯ／Ａｇ界面にＧＺＯより屈折率の低い媒質を挿入することにより、Ａｇによる吸収損を低減できる可能性があるといえる。   Since the surface plasmon resonance phenomenon is not sufficiently observed unless the smoothness and the incident angle are strictly satisfied, it is presumed that a sharp absorption characteristic is difficult to be obtained with an actual back surface electrode (having a wavelength order unevenness). Therefore, although it is assumed that the peak of 30 ° to 40 ° is ignored and FIG. 4 is viewed, the integrated electric field strength level is the refraction of the material X of the refractive index adjusting layer 9 in the incident angle range of 45 ° to 65 °. It can be interpreted as changing according to the rate. That is, it can be said that absorption loss due to Ag may be reduced by inserting a medium having a refractive index lower than that of GZO at the GZO / Ag interface.

図５を参照すると、積分電界強度の、挿入媒質の膜厚に対する依存性が示されている。入射角５０°、計算波長８００ｎｍでの計算結果である。膜厚がゼロのプロットは、現状の構造ＧＺＯ／Ａｇであり、膜厚８０ｎｍのプロットは、Ｓｉ／挿入媒質Ｘ／Ａｇの構造を示す。ＳｉＯ２の挿入により積分電界強度を低下できることが示されている。ＳｉＯ２の膜厚が厚いほどＡｇ層に侵入する積分電界強度が低下する傾向にある。 Referring to FIG. 5, the dependence of the integrated electric field strength on the thickness of the insertion medium is shown. It is a calculation result at an incident angle of 50 ° and a calculation wavelength of 800 nm. A plot with a film thickness of zero indicates the current structure GZO / Ag, and a plot with a film thickness of 80 nm indicates the structure of Si / insertion medium X / Ag. It has been shown that the integrated electric field strength can be reduced by inserting SiO 2 . As the thickness of SiO 2 increases, the integrated electric field strength that penetrates the Ag layer tends to decrease.

図６を参照すると、図５と同じ条件でＳｉＯ２が挿入された場合の積分電界強度の、挿入媒質の膜厚に対する依存性が、特に膜厚が薄い場合について詳細に示されている。この結果によれば、わずか２ｎｍ程度の膜厚でも、Ａｇ層に侵入する積分電界強度が低下している。これはセル化に有利な結果である。 Referring to FIG. 6, the dependence of the integrated electric field strength on the thickness of the inserted medium when SiO 2 is inserted under the same conditions as in FIG. 5 is shown in detail when the thickness is particularly small. According to this result, even with a film thickness of only about 2 nm, the integrated electric field strength that penetrates the Ag layer is reduced. This is a favorable result for cellization.

次に、タンデムセル構造を備えた光電変換素子における屈折率調整層の効果の計算について述べる。   Next, calculation of the effect of the refractive index adjustment layer in the photoelectric conversion element having a tandem cell structure will be described.

図７を参照すると、タンデムセル構造を備えた光電変換素子の断面図が示されている。ガラス基板１ａの裏面側には、第１透明導電膜４ａが成層されている。第１透明導電膜４ａの裏面側には、ａ−Ｓｉ（アモルファスシリコン）からなるトップセル層５ａが成層されている。トップセル層５ａの裏面側には、μｃ−Ｓｉ（微結晶シリコン）からなるボトムセル層７ａが成層されている。ボトムセル層７ａの裏面側には、第２透明導電膜８ａが成層されている。第２透明導電膜８ａの裏面側には、屈折率調整層９ａが成層されている。屈折率調整層９ａの裏面側には、裏面不透明電極２ａが成層されている。ガラス基板１ａの裏面側に積層された各層の接合面は、テクスチャ構造面として形成されている。   Referring to FIG. 7, a cross-sectional view of a photoelectric conversion element having a tandem cell structure is shown. A first transparent conductive film 4a is formed on the back side of the glass substrate 1a. A top cell layer 5a made of a-Si (amorphous silicon) is formed on the back side of the first transparent conductive film 4a. A bottom cell layer 7a made of μc-Si (microcrystalline silicon) is formed on the back side of the top cell layer 5a. A second transparent conductive film 8a is formed on the back side of the bottom cell layer 7a. A refractive index adjustment layer 9a is formed on the back side of the second transparent conductive film 8a. On the back surface side of the refractive index adjustment layer 9a, a back surface opaque electrode 2a is formed. The joint surface of each layer laminated | stacked on the back surface side of the glass substrate 1a is formed as a texture structure surface.

図８を参照すると、計算に用いたタンデムセルの層構造が示されている。この層構造は、図７に示された層構造と同じである。計算には、電磁波解析（ＦＤＴＤ法）を用いた。テクスチャ構造の凹凸の１周期分が取り出され、その左端と右端が同じとなる周期的境界条件で計算を行った。テクスチャ構造の凹凸は、ガラス基板（図８には図示されていない）に平行な面から３０°の凹凸とした。テクスチャ構造の凹凸の１周期分の幅（ピッチ）としては、後述するように様々な条件を指定した。ガラス基板の厚さは半無限とした。   Referring to FIG. 8, the layer structure of the tandem cell used for the calculation is shown. This layer structure is the same as the layer structure shown in FIG. An electromagnetic wave analysis (FDTD method) was used for the calculation. One period of texture structure irregularities was taken out, and the calculation was performed under a periodic boundary condition in which the left end and the right end were the same. The unevenness of the texture structure was 30 ° from the plane parallel to the glass substrate (not shown in FIG. 8). Various conditions were specified as the width (pitch) of one period of the unevenness of the texture structure as described later. The thickness of the glass substrate was semi-infinite.

図９を参照すると、ａ−Ｓｉよりなるトップセル層５ａのｐ偏光成分により発生する短絡電流に対する屈折率調整層９ａの屈折率依存性が示されている。ＧＺＯよりなる第２透明導電膜の膜厚は４０ｎｍ、屈折率調整層９ａの厚さは４０ｎｍである。ピッチが０．２μｍで、屈折率調整層９ａの屈折率がＧＺＯと同じ（ｎ≒１．８８）場合の短絡電流が基準として１００％に取られている。ピッチが０．２μｍ、０．６μｍ、１．０μｍ、及び２．０μｍのいずれの場合も、屈折率調整層９ａの屈折率が小さい場合に短絡電流が大きくなっていることが見て取れる。   Referring to FIG. 9, the refractive index dependency of the refractive index adjustment layer 9a with respect to a short-circuit current generated by the p-polarized component of the top cell layer 5a made of a-Si is shown. The thickness of the second transparent conductive film made of GZO is 40 nm, and the thickness of the refractive index adjustment layer 9a is 40 nm. When the pitch is 0.2 μm and the refractive index of the refractive index adjusting layer 9a is the same as that of GZO (n≈1.88), the short-circuit current is taken as 100% as a reference. It can be seen that when the pitch is 0.2 μm, 0.6 μm, 1.0 μm, and 2.0 μm, the short-circuit current increases when the refractive index of the refractive index adjustment layer 9a is small.

図１０を参照すると、μｃ−Ｓｉよりなるボトムセル層７ａのｐ偏光成分により発生する短絡電流に対する屈折率調整層の９ａの屈折率依存性が示されている。ＧＺＯよりなる第２透明導電膜の膜厚は４０ｎｍ、屈折率調整層９ａの厚さは４０ｎｍである。ピッチが０．２μｍで、屈折率調整層９ａの屈折率がＧＺＯと同じ（ｎ≒１．８８）場合の短絡電流が基準として１００％に取られている。図９に示されたトップセル層５ａの場合と同じく、ピッチが０．２μｍ、０．６μｍ、１．０μｍ、及び２．０μｍのいずれの場合も、屈折率調整層９ａの屈折率が小さい場合に短絡電流が大きくなっていることが見て取れる。   Referring to FIG. 10, the refractive index dependency of the refractive index adjusting layer 9a with respect to the short-circuit current generated by the p-polarized component of the bottom cell layer 7a made of μc-Si is shown. The thickness of the second transparent conductive film made of GZO is 40 nm, and the thickness of the refractive index adjustment layer 9a is 40 nm. When the pitch is 0.2 μm and the refractive index of the refractive index adjusting layer 9a is the same as that of GZO (n≈1.88), the short-circuit current is taken as 100% as a reference. As in the case of the top cell layer 5a shown in FIG. 9, the refractive index of the refractive index adjustment layer 9a is small when the pitch is 0.2 μm, 0.6 μm, 1.0 μm, and 2.0 μm. It can be seen that the short-circuit current increases.

図１１を参照すると、μｃ−Ｓｉよりなるボトムセル層７ａで発生する短絡電流に対する屈折率調整層９ａの屈折率・膜厚依存性が示されている。入射光としては、ｐ偏光成分とｓ偏光成分との平均がとられている。ＧＺＯよりなる第２透明導電膜８ａの膜厚と屈折率調整層９ａの厚さとの和は８０ｎｍとした。ピッチは０．６μｍである。屈折率調整層９ａの屈折率がＧＺＯと同じ（ｎ≒１．８８）場合の短絡電流が基準として１００％に取られている。屈折率調整層９ａの膜厚が２０ｎｍ、３０ｎｍ、及び４０ｎｍのいずれの場合も、屈折率調整層９ａの屈折率がＧＺＯよりも小さい場合に短絡電流が大きくなっていることが見て取れる。   Referring to FIG. 11, the refractive index / film thickness dependence of the refractive index adjustment layer 9a with respect to the short-circuit current generated in the bottom cell layer 7a made of μc-Si is shown. As the incident light, an average of the p-polarized component and the s-polarized component is taken. The sum of the thickness of the second transparent conductive film 8a made of GZO and the thickness of the refractive index adjustment layer 9a was 80 nm. The pitch is 0.6 μm. The short-circuit current when the refractive index of the refractive index adjusting layer 9a is the same as that of GZO (n≈1.88) is taken as 100% as a reference. It can be seen that the short-circuit current is large when the refractive index of the refractive index adjusting layer 9a is smaller than that of GZO when the film thickness of the refractive index adjusting layer 9a is 20 nm, 30 nm, or 40 nm.

図３、図４、図５、図６、図９、図１０、及び図１１に示された計算結果から、第２透明導電膜８、８ａと裏面不透明電極２、２ａとの間に第２透明導電膜８、８ａよりも屈折率が小さい材質からなる層が挿入されることにより、裏面不透明電極２、２ａに侵入し吸収される電界の強度が抑制され、その結果、発電効率が上昇することが示されている。   3, 4, 5, 6, 9, 10, and 11, the second transparent conductive film 8, 8 a and the back surface opaque electrode 2, 2 a have a second value. By inserting a layer made of a material having a refractive index lower than that of the transparent conductive films 8 and 8a, the strength of the electric field that penetrates and is absorbed into the back surface opaque electrodes 2 and 2a is suppressed, and as a result, the power generation efficiency increases. It has been shown.

［特許文献１］により開示されている効果が透明導電層と半導体層との界面での反射の減少によって得られるものであるのに対し、本発明は裏面電極の金属層で吸収される電磁波が低減されることによって発電効率が向上するものであり、原理が異なる。   Whereas the effect disclosed in [Patent Document 1] is obtained by a decrease in reflection at the interface between the transparent conductive layer and the semiconductor layer, the present invention does not absorb electromagnetic waves absorbed by the metal layer of the back electrode. The power generation efficiency is improved by being reduced, and the principle is different.

図１２を参照すると、本発明の他の実施の形態が示されている。図１２を参照すると、ガラス基板１、第１透明導電層４、トップセル層５、ミドルセル層１０、ボトムセル層７、第２透明導電層８、屈折率調整層９、裏面不透明電極２が順次に積層されている。トップセル層５はアモルファスシリコンを含む光電変換層、ミドルセル層１０は多結晶シリコン（微結晶シリコンの場合も含める）を含む光電変換層、ボトムセル層７は多結晶シリコン（微結晶シリコンの場合も含める）を含む光電変換層である。本発明による、屈折率が第２透明導電層８よりも小さい屈折率調整層９を第２透明導電層８と裏面不透明電極２との間に形成する構造は、こうしたトリプル型の光電変換素子にも好適に用いられる。   Referring to FIG. 12, another embodiment of the present invention is shown. Referring to FIG. 12, the glass substrate 1, the first transparent conductive layer 4, the top cell layer 5, the middle cell layer 10, the bottom cell layer 7, the second transparent conductive layer 8, the refractive index adjustment layer 9, and the back surface opaque electrode 2 are sequentially formed. Are stacked. The top cell layer 5 is a photoelectric conversion layer containing amorphous silicon, the middle cell layer 10 is a photoelectric conversion layer containing polycrystalline silicon (including microcrystalline silicon), and the bottom cell layer 7 is polycrystalline silicon (including microcrystalline silicon). ). The structure in which the refractive index adjustment layer 9 having a refractive index smaller than that of the second transparent conductive layer 8 according to the present invention is formed between the second transparent conductive layer 8 and the back surface opaque electrode 2 is used in such a triple photoelectric conversion element. Are also preferably used.

本発明は、上述の構造以外の様々な構造の薄膜太陽電池にも適用可能である。例えば、不透光性基板上に、裏面不透明電極、裏面屈折率調整層、裏面透明導電層、光電変換層、透明電極の順に積層された薄膜太陽電池にも適用されることが可能である。   The present invention is also applicable to thin film solar cells having various structures other than the above structure. For example, the present invention can also be applied to a thin film solar cell in which a back opaque electrode, a back refractive index adjustment layer, a back transparent conductive layer, a photoelectric conversion layer, and a transparent electrode are stacked in this order on a light-impermeable substrate.

図１は、光電変換素子の断面図である。FIG. 1 is a cross-sectional view of a photoelectric conversion element. 図２は、光電変換素子の裏面不透明電極の付近の断面図である。FIG. 2 is a cross-sectional view of the vicinity of the back surface opaque electrode of the photoelectric conversion element. 図３は、屈折率調整層の材質を変えたときのＡｇに侵入する電界強度の計算結果を示す。FIG. 3 shows the calculation result of the electric field strength that penetrates Ag when the material of the refractive index adjustment layer is changed. 図４は、積分電界強度の計算結果である。FIG. 4 shows the calculation result of the integrated electric field strength. 図５は、積分電界強度の、挿入媒質の膜厚に対する依存性を示す。FIG. 5 shows the dependence of the integrated electric field strength on the thickness of the insertion medium. 図６は、積分電界強度の、挿入されるＳｉＯ２の膜厚に対する依存性を示す。FIG. 6 shows the dependence of the integrated electric field strength on the thickness of the inserted SiO 2 . 図７は、タンデムセル構造を備えた光電変換素子の断面図である。FIG. 7 is a cross-sectional view of a photoelectric conversion element having a tandem cell structure. 図８は、計算に用いたタンデムセルの層構造を示す。FIG. 8 shows the layer structure of the tandem cell used for the calculation. 図９は、トップセル層がｐ偏光成分により発生する短絡電流に対する屈折率調整層の屈折率依存性を示す。FIG. 9 shows the refractive index dependency of the refractive index adjustment layer with respect to a short-circuit current generated by the p-polarized component in the top cell layer. 図１０は、ボトムセル層がｐ偏光成分により発生する短絡電流に対する屈折率調整層の屈折率依存性を示す。FIG. 10 shows the refractive index dependency of the refractive index adjustment layer with respect to the short-circuit current generated by the p-polarized component in the bottom cell layer. 図１１は、ボトムセル層が発生する短絡電流に対する屈折率調整層の屈折率・膜厚依存性を示す。FIG. 11 shows the refractive index / film thickness dependence of the refractive index adjustment layer with respect to the short-circuit current generated by the bottom cell layer. 図１２は、本発明の実施の形態によるトリプル型の光電変換素子の断面図である。FIG. 12 is a cross-sectional view of a triple photoelectric conversion element according to an embodiment of the present invention.

符号の説明Explanation of symbols

１…ガラス基板
２…裏面不透明電極
３…発電層
４…第１透明導電膜
５…トップセル層
６…中間層
７…ボトムセル層
８…第２透明導電膜
９…屈折率調整層
１０…ミドルセル層 DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Back surface opaque electrode 3 ... Electric power generation layer 4 ... 1st transparent conductive film 5 ... Top cell layer 6 ... Intermediate | middle layer 7 ... Bottom cell layer 8 ... 2nd transparent conductive film 9 ... Refractive index adjustment layer 10 ... Middle cell layer

Claims (13)

透光性基板と、
前記透光性基板の主面側に形成され、受光した光を電力に変換する光電変換層と、
前記主面側に形成され、該光電変換素子に外光が入射する側と反対側に形成された裏面電極層と、
前記光電変換層と前記裏面電極層との間に形成され、前記裏面電極層に近い側において前記裏面電極層から遠い側よりも屈折率が小さい透明層
とを具備する
光電変換素子。 A translucent substrate;
A photoelectric conversion layer that is formed on the main surface side of the translucent substrate and converts received light into electric power;
A back electrode layer formed on the main surface side and formed on the side opposite to the side on which external light is incident on the photoelectric conversion element;
A photoelectric conversion element comprising: a transparent layer formed between the photoelectric conversion layer and the back electrode layer and having a refractive index smaller on the side closer to the back electrode layer than on the side far from the back electrode layer. 請求項１に記載された光電変換素子であって、
前記透明層は、
上部透明層と、
前記上部透明層と前記裏面電極層との間に設けられ、前記上部透明層よりも屈折率が小さい屈折率調整層
とを具備する
光電変換素子。 The photoelectric conversion device according to claim 1,
The transparent layer is
An upper transparent layer;
A photoelectric conversion element comprising: a refractive index adjustment layer provided between the upper transparent layer and the back electrode layer and having a refractive index smaller than that of the upper transparent layer. 請求項２に記載された光電変換素子であって、
前記上部透明層はＺｎＯ、ＩＴＯ、又はＳｎＯ２のうちのいずれかを含み、
前記ＺｎＯには、Ｇａ、Ｓｉ、Ａｌ、Ｂのうちのいずれかがドーピングされている
光電変換素子。 A photoelectric conversion element according to claim 2,
The upper transparent layer comprises ZnO, ITO, or any of SnO 2,
The ZnO is doped with any one of Ga, Si, Al, and B. A photoelectric conversion element. 請求項２又は３のうちのいずれか１項に記載された光電変換素子であって、
前記屈折率調整層はＳｉＯ２、ＭｇＦ２、ＭｇＯ、ガラス、Ａｌ２Ｏ３、Ｙ２Ｏ３、ＣａＦ２、ＬｉＦ、空孔のうちのいずれかを含む
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claim 2 or 3,
The refractive index adjustment layer is SiO 2, MgF 2, MgO, glass, Al 2 O 3, Y 2 O 3, CaF 2, LiF, photoelectric conversion element comprising any one of the holes. 請求項４に記載された光電変換素子であって、
前記屈折率調整層は、第１材料と第２材料との混合相を含み、
前記第１材料は、ＳｉＯ２、ＭｇＦ２、ＭｇＯ、ガラス、Ａｌ２Ｏ３、Ｙ２Ｏ３、ＣａＦ２、及びＬｉＦのうちから選択され、
前記第２材料は、ＺｎＯ、ＩＴＯ、及びＳｎＯ２のうちから選択され、前記ＺｎＯにはＧａ、Ｓｉ、Ａｌ、Ｂのうちのいずれかがドーピングされている
光電変換素子。 The photoelectric conversion device according to claim 4,
The refractive index adjustment layer includes a mixed phase of a first material and a second material,
The first material is selected from SiO 2 , MgF 2 , MgO, glass, Al 2 O 3 , Y 2 O 3 , CaF 2 , and LiF,
The second material, ZnO, ITO, and is selected from the SnO 2, the in ZnO Ga, Si, Al, photoelectric conversion element either is doped among B. 請求項２から５のうちのいずれか１項に記載された光電変換素子であって、
前記裏面電極層はＡｇ、Ａｌ、Ｃｕ、Ａｕのいずれかを含む
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claims 2-5,
The back electrode layer includes one of Ag, Al, Cu, and Au. 請求項２から６のうちのいずれか１項に記載された光電変換素子であって、
前記屈折率調整層は、厚さが２ナノメートル以上である
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claims 2-6,
The refractive index adjustment layer has a thickness of 2 nanometers or more. 請求項１から７のうちのいずれか１項に記載された光電変換素子であって、
前記透明層は３層以上の層構造をしており、
前記層構造のなかの任意の層である上側透明層の屈折率は、前記上側透明層と前記裏面電極層との間の任意の層である下側透明層の屈折率よりも大きい
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claims 1-7,
The transparent layer has a layer structure of three or more layers,
The refractive index of the upper transparent layer which is an arbitrary layer in the layer structure is larger than the refractive index of the lower transparent layer which is an arbitrary layer between the upper transparent layer and the back electrode layer. . 請求項１から８までのいずれか１項に記載された光電変換素子であって、
前記光電変換層は多結晶質シリコンを含み、
更に、前記光電変換層に対して前記裏面電極層の反対側に、アモルファスシリコンを含む光起電力層を含む
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claims 1-8,
The photoelectric conversion layer includes polycrystalline silicon,
Furthermore, the photoelectric conversion element containing the photovoltaic layer containing an amorphous silicon on the opposite side of the said back surface electrode layer with respect to the said photoelectric converting layer. 請求項９に記載された光電変換素子であって、
前記光電変換層はシリコンとシリコン以外のＩＶ族元素との合金を含む
光電変換素子。 The photoelectric conversion element according to claim 9,
The photoelectric conversion layer includes an alloy of silicon and a group IV element other than silicon. 請求項９または１０のうちのいずれか１項に記載された光電変換素子であって、
更に、前記光電変換層と前記光起電力層との間に、多結晶質シリコンを含む第２光電変換層を含む
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claim 9 or 10,
Furthermore, a photoelectric conversion element including a second photoelectric conversion layer containing polycrystalline silicon between the photoelectric conversion layer and the photovoltaic layer. 請求項１１に記載された光電変換素子であって、
前記第２光電変換層はシリコンとシリコン以外のＩＶ族元素との合金を含む
光電変換素子。 The photoelectric conversion device according to claim 11,
The second photoelectric conversion layer includes an alloy of silicon and a group IV element other than silicon. 請求項１から７のうちのいずれか１項に記載された光電変換素子であって、
不透光性基板と、
前記不透光性基板の主面側に形成された裏面電極層と、
前記主面側に形成され、受光した光を電力に変換する光電変換層と、
前記主面側に形成された透明電極層と、入射光は前記透明電極層の側から取り入れられ、
該光電変換素子に外光が入射する側と反対側に形成された裏面電極層と前記光電変換層との間に形成され、前記裏面電極層に近い側において前記裏面電極層から遠い側よりも屈折率が小さい透明層
とを具備する
光電変換素子。 It is a photoelectric conversion element given in any 1 paragraph of Claims 1-7,
An opaque substrate,
A back electrode layer formed on the main surface side of the opaque substrate,
A photoelectric conversion layer that is formed on the main surface side and converts received light into electric power;
The transparent electrode layer formed on the main surface side, and incident light is taken from the transparent electrode layer side,
The photoelectric conversion element is formed between the back electrode layer formed on the side opposite to the side on which external light is incident and the photoelectric conversion layer, and closer to the back electrode layer than the side far from the back electrode layer. A photoelectric conversion element comprising: a transparent layer having a small refractive index.
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