JP2006117919A - Three-dimensional sheet-like adherend for sealing semiconductor - Google Patents
Three-dimensional sheet-like adherend for sealing semiconductor Download PDFInfo
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- JP2006117919A JP2006117919A JP2005266165A JP2005266165A JP2006117919A JP 2006117919 A JP2006117919 A JP 2006117919A JP 2005266165 A JP2005266165 A JP 2005266165A JP 2005266165 A JP2005266165 A JP 2005266165A JP 2006117919 A JP2006117919 A JP 2006117919A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
Description
本発明は、複数の半導体部材を搭載した電子部品（半導体複合装置と称する）の封止に適したエポキシ樹脂系組成物の積層体に係わる。尚、ここでいう半導体部材とは、半導体素子及び関連部材（抵抗、コンデンサー等）を含む半導体複合装置を構成する部材全般を示す。 The present invention relates to a laminate of an epoxy resin composition suitable for sealing an electronic component (referred to as a semiconductor composite device) on which a plurality of semiconductor members are mounted. The term “semiconductor member” as used herein refers to all members constituting a semiconductor composite device including semiconductor elements and related members (resistors, capacitors, etc.).
最近の半導体装置は樹脂系組成物によって封止されているといって過言ではない。樹脂以外の素材（金属、ガラス及びセラミック等）による封止方法はごく一部の特殊な半導体装置で採用されているに過ぎない。又、樹脂系組成物は、樹脂、充填剤、添加剤等で構成されており、樹脂としては熱硬化性（エポキシ、シリコーン、ポリイミド等）及び熱可塑性（ポリフェニレンスルファイド等）が知られているが、半導体用途では主にエポキシ樹脂が使用されている。 It is no exaggeration to say that recent semiconductor devices are sealed with a resin-based composition. Sealing methods using materials other than resin (metal, glass, ceramic, etc.) are only used in a few special semiconductor devices. The resin composition is composed of a resin, a filler, an additive, and the like. As the resin, thermosetting (epoxy, silicone, polyimide, etc.) and thermoplasticity (polyphenylene sulfide, etc.) are known. However, epoxy resin is mainly used in semiconductor applications.
半導体封止用のエポキシ樹脂系組成物（以降、樹脂組成物と称する）は、約３０年前に原型ができ現在に至っている。この間、半導体装置は飛躍的な進歩を遂げ、これに追随するため樹脂組成物の成分はかなり変化してきた。例えば、樹脂はクレゾールノボラック型からビフェノール型に、充填剤であるシリカは破砕状から球状へと基本的な構造や形状が変わってきた。 An epoxy resin-based composition for semiconductor encapsulation (hereinafter referred to as a resin composition) has been prototyped about 30 years ago, and has reached the present. In the meantime, semiconductor devices have made great progress, and the components of the resin composition have changed considerably in order to follow this. For example, the basic structure and shape of the resin has changed from a cresol novolac type to a biphenol type, and the silica as a filler has changed from a crushed shape to a spherical shape.
しかし、封止方法自体はほとんど進化していないのが実状である。樹脂組成物が固形であれば移送成形、液状であれば滴下成形する方法が依然として採用されている。又、半導体素子１個を搭載する半導体装置の成形工程においては、同一材料を使用し該装置を封止するのが通常である。つまり、汎用の半導体装置は同じ樹脂組成物により封止されているのが常識である。 However, in reality, the sealing method itself has hardly evolved. If the resin composition is solid, transfer molding is still employed, and if it is liquid, drop molding is still employed. Further, in the molding process of a semiconductor device on which one semiconductor element is mounted, the same material is usually used to seal the device. That is, it is common knowledge that general-purpose semiconductor devices are sealed with the same resin composition.
半導体複合装置、例えば、マルチチップモジュール（ＭＣＭ）やシステムインパッケージ（ＳｉＰ）と呼ばれる装置は、複数の半導体部材を搭載している。即ち、寸法、機能及び性能（速度、発熱等）の異なる部材を混載している。このような半導体複合装置は、当然ながら各部材毎に最適の樹脂組成物で封止することが合理的である。例えば、電極間隔の短い部材は他よりも注入性に優れる樹脂組成物で封止することが好ましい。 A semiconductor composite device, for example, a device called a multichip module (MCM) or a system in package (SiP) has a plurality of semiconductor members mounted thereon. That is, members having different dimensions, functions, and performance (speed, heat generation, etc.) are mixed. Naturally, such a semiconductor composite device is rationally sealed with an optimal resin composition for each member. For example, it is preferable to seal a member having a short electrode interval with a resin composition having better injectability than others.
しかし、現在の半導体複合装置の封止方法は、従来方法を踏襲しており、同一組成の樹脂組成物を用いて装置全体を封止する場合が多い。特に、高品質より低価格を重視する製品では顕著であり、低コスト指向の強い半導体複合装置では半導体部材と樹脂組成物の相性は無視されていた。 However, the present semiconductor composite device sealing method follows the conventional method, and the entire device is often sealed using a resin composition having the same composition. This is particularly true for products that place importance on low price rather than high quality, and the compatibility between the semiconductor member and the resin composition has been ignored in semiconductor composite devices that are highly cost-effective.
一方、半導体装置の軽薄短小化、即ち、高集積・高密度実装の追及には益々拍車がかかっている。例えば、積層型半導体装置（３ＤＰ）や一括封止型半導体装置（ＭＡＰ）も実用化されてきた。これら最先端の半導体装置では、樹脂組成物及び封止方法（これらを封止システムと称する）の抜本的な見直しが要求されている。従来の封止システムでは金線変形や未充填といった大きな問題が発生しているからである。 On the other hand, the pursuit of light and thin semiconductor devices, that is, high integration and high density mounting, has been increasingly accelerated. For example, a stacked semiconductor device (3DP) and a batch sealed semiconductor device (MAP) have been put into practical use. In these state-of-the-art semiconductor devices, a drastic review of the resin composition and the sealing method (these are referred to as a sealing system) is required. This is because the conventional sealing system has a large problem such as gold wire deformation and unfilling.
この結果、新しい封止システムの検討が始まっている。例えば、樹脂組成物検討としてはシリカの高充填や微細化、封止方法検討としては粉体圧縮成形等である。本発明者らは、既に新規封止システムとしてシート状接着材料の圧縮成形を提案している。 As a result, a new sealing system has been studied. For example, high resin filling and refinement as a resin composition study and powder compression molding as a sealing method study. The present inventors have already proposed compression molding of a sheet-like adhesive material as a new sealing system.
今後の半導体複合装置は、非常に複雑で多機能になってくる。多種、多数の半導体部材が３次元的に高密度実装された構造、例えば、ＭＣＭ、３ＤＰ及びＭＡＰが組み合わさった半導体複合装置になると考えられる。本発明者らは、シート状接着材料の検討を鋭意進め、次世代半導体複合装置に適した全く新しい封止用材料を提案するものである。 Future semiconductor composite devices will be very complex and multifunctional. It is considered that a semiconductor composite device in which various types and a large number of semiconductor members are three-dimensionally mounted with high density, for example, a combination of MCM, 3DP, and MAP. The inventors of the present invention have eagerly studied sheet-like adhesive materials and proposed a completely new sealing material suitable for next-generation semiconductor composite devices.
本発明は、最先端の半導体複合装置を封止するのに適した３次元構造を有する接着体を提供するものである。 The present invention provides an adhesive body having a three-dimensional structure suitable for sealing a state-of-the-art semiconductor composite device.
フィルムのうえに品質特性の異なる複数種の樹脂組成物を並列又は及び積層したシート状接着体である。 It is a sheet-like adhesive body in which a plurality of types of resin compositions having different quality characteristics are arranged in parallel or on a film.
該接着体において、複数種の樹脂組成物は各々シリカを含み、該シリカの特性や含有量が異なるものである。 In the adhesive body, the plurality of types of resin compositions each contain silica, and the characteristics and content of the silica are different.
該接着体のフィルムが剥離性、絶縁性、導電性、放熱性、低熱膨張性、遮光性、光透過性、光反射性、耐熱性、撥水性、ガス透過性、電磁波遮蔽性及び電磁波吸収性から選ばれた少なくとも一つの機能を有するものである。 The adhesive film is peelable, insulating, conductive, heat radiating, low thermal expansion, light shielding, light transmissive, light reflective, heat resistant, water repellent, gas permeable, electromagnetic wave shielding and electromagnetic wave absorbing. It has at least one function selected from.
本発明のシート状接着体は、フィルム及び複数種の樹脂組成物より構成されている。半導体複合装置の各半導体部材は、該部材の特性に適した複数種の樹脂組成物で封止されることが必要である。 The sheet-like adhesive body of the present invention is composed of a film and a plurality of types of resin compositions. Each semiconductor member of the semiconductor composite device needs to be sealed with a plurality of types of resin compositions suitable for the characteristics of the member.
樹脂組成物とは、エポキシ樹脂を主たる樹脂成分とし、これに充填剤、硬化促進剤そして必要に応じて硬化剤及び添加剤（表面処理剤、粘着剤、撥水剤、粘度調整剤等）を配合したものである。尚、樹脂成分としてエポキシ以外の樹脂を少量混合しても良い。エポキシ樹脂としては、エポキシ基を有する化合物なら何でも良いが、半導体用途では、ビスフェノール型、ビフェノール型、ナフタレン型、ノボラック型及びこれらの誘導体等が使用される場合が多い。硬化促進剤としては、樹脂の架橋反応で触媒効果を有する物質、例えば、アミン系化合物やリン系化合物等を用いることができる。 The resin composition has an epoxy resin as a main resin component, and a filler, a curing accelerator and, if necessary, a curing agent and an additive (a surface treatment agent, an adhesive, a water repellent, a viscosity modifier, etc.). It is a blend. A small amount of resin other than epoxy may be mixed as a resin component. As the epoxy resin, any compound having an epoxy group may be used, but in semiconductor applications, bisphenol type, biphenol type, naphthalene type, novolak type, and derivatives thereof are often used. As a hardening accelerator, the substance which has a catalytic effect by the crosslinking reaction of resin, for example, an amine compound, a phosphorus compound, etc. can be used.
充填剤としては、従来の半導体用封止材料で使用されている物質、例えば、シリカ、アルミナ、窒化アルミニウム等を使用することができる。本発明としては、半導体素子との特性バランスが良く実績のあるシリカを、主たる充填剤として用いることが好ましい。シリカには、様々な特性（形状、粒度分布、シラノール量等）を有する製品があり、半導体複合装置の各部材の諸特性（寸法、熱膨張率、電極間隔等）に合わせて、最適のシリカを選択し配合することができる。 As the filler, a substance used in a conventional semiconductor sealing material, for example, silica, alumina, aluminum nitride, or the like can be used. In the present invention, it is preferable to use silica, which has a good balance of properties with semiconductor elements and has a proven record, as the main filler. Silica has products with various characteristics (shape, particle size distribution, silanol content, etc.), and is best suited to the various characteristics (dimensions, thermal expansion coefficient, electrode spacing, etc.) of each component of the semiconductor composite device. Can be selected and blended.
硬化剤としては、エポキシ樹脂と反応する化合物なら何でも良いが、半導体用途ならフェノール樹脂類、酸無水物類、アミン類を用いる場合が多い。添加剤は、目的により様々な物質が用いられるが、一般的なものとしては表面処理剤（例：シラン系カップリング剤）を挙げることができる。又、本発明の樹脂組成物は、離型剤又は及び染顔料を含まないことが好ましい。離型剤は接着性を低下させるため、染顔料は絶縁性を低下させるため、使用しない方が好ましい。 As the curing agent, any compound that reacts with an epoxy resin may be used, but phenolic resins, acid anhydrides, and amines are often used for semiconductor applications. Although various substances are used as the additive depending on the purpose, a surface treatment agent (eg, silane coupling agent) can be mentioned as a general one. Moreover, it is preferable that the resin composition of this invention does not contain a mold release agent or a dyeing pigment. It is preferable not to use a release agent because it lowers adhesiveness, and a dye and pigment lowers insulation.
本発明で用いるフィルムは機能を有することが好ましい。機能としては、剥離性、絶縁性、導電性、放熱性、低熱膨張性、遮光性、光透過性、光反射性、耐熱性、撥水性、ガス透過性、電磁波遮蔽性及び電磁波吸収性を挙げることができる。 The film used in the present invention preferably has a function. Functions include peelability, insulation, conductivity, heat dissipation, low thermal expansion, light shielding, light transmission, light reflection, heat resistance, water repellency, gas permeability, electromagnetic wave shielding and electromagnetic wave absorption. be able to.
フィルムに機能を持たせることで、樹脂組成物を必須成分だけで構成することが可能となる。例えば、離型、空気抜き、光反射及び電波反射といった役割をフィルムに与えることにより、樹脂組成物は接着絶縁性を有する成分で構成でき、該特性と矛盾する成分を排除することができる。 By imparting a function to the film, the resin composition can be composed of only essential components. For example, by giving the film roles such as mold release, air venting, light reflection, and radio wave reflection, the resin composition can be composed of components having adhesive insulating properties, and components inconsistent with the characteristics can be eliminated.
又、複数種のフィルムを使用することにより、多機能性を付与することもできる。例えば、金属箔フィルムと絶縁フィルムを張り合わせて、放熱絶縁フィルムとして利用することもできる。 Moreover, multi-functionality can also be provided by using multiple types of films. For example, a metal foil film and an insulating film can be bonded together and used as a heat dissipation insulating film.
樹脂組成物をフィルムのうえに配置する方法としては、従来の公知の技術、例えば、塗布、印刷、圧着、貼付、噴霧等の手法を用いることができる。樹脂組成物の特性（粘度、融点等）により適した方法を選択しフィルム上に配列、積層することができる。 As a method of disposing the resin composition on the film, a conventionally known technique such as coating, printing, pressure bonding, sticking, spraying, or the like can be used. A method suitable for the properties (viscosity, melting point, etc.) of the resin composition can be selected, arranged and laminated on the film.
図１から図６は、本発明のシート状接着体、複数の半導体部材及び半導体複合装置を説明する図である。これらは基本構成の１単位を示す模式図であり、工業的には複数単位で加工した後に、１単位に切断するのが効率的である。各図において、（Ａ）はシート状接着体（上部）と複数の半導体部材（下部）を断面で示したものであり、（Ｂ）は両者を熱圧着した後の半導体複合装置の断面図である。各々のシート状接着体は目的とする機能を有するフィルムを用いている。尚、加熱条件はいずれの場合も１５０℃・３分である。 1 to 6 are views for explaining a sheet-like adhesive body, a plurality of semiconductor members, and a semiconductor composite device of the present invention. These are schematic diagrams showing one unit of the basic structure, and it is efficient to cut into one unit after processing in a plurality of units industrially. In each figure, (A) shows a sheet-like adhesive body (upper part) and a plurality of semiconductor members (lower part) in cross section, and (B) is a cross-sectional view of the semiconductor composite device after thermocompression bonding of both. is there. Each sheet-like adhesive body uses a film having a desired function. In all cases, the heating conditions are 150 ° C. and 3 minutes.
これらの半導体複合装置は、寸法や特性の異なる半導体部材より構成されている。各部材に適した樹脂組成物を対向配置し封止することにより、各部材の特性を最大限に発揮できる。尚、シート状接着体は、対象とする半導体部材と相対していれば良く、縦型の圧着装置なら上下、横型の装置なら左右のいずれかに配置すれば良い。 These semiconductor composite devices are composed of semiconductor members having different dimensions and characteristics. By arranging and sealing the resin composition suitable for each member so as to face each other, the characteristics of each member can be maximized. Note that the sheet-like adhesive body only needs to be opposed to the target semiconductor member, and may be arranged either on the top and bottom for a vertical type crimping apparatus or on the left or right side for a horizontal type apparatus.
本発明の接着体を用いて半導体複合装置を封止することにより、その性能を最大限に発揮できる。従来の封止材料は、単一、単機能であり、半導体複合装置の全ての部材を満足することはできない。つまり、本発明は、半導体複合装置に適した封止材料を始めて市場に提供するものである。 By sealing the semiconductor composite device using the adhesive of the present invention, the performance can be maximized. Conventional sealing materials are single and single function, and cannot satisfy all members of the semiconductor composite device. That is, the present invention is the first to provide a sealing material suitable for a semiconductor composite device to the market.
以下、本発明のシート状接着体に関して実施例にて具体的に説明する。尚、本例で用いた部は全て重量部である。又、実施例では、半導体部材として市販品（回路基板、半田、金線）及び擬似加工品を使用した。半導体素子はウエハー（８インチ径、０．５ｍｍ厚）に電極相当部として部分メッキ（アルミニウム）を施し切断した模擬品である。 Hereinafter, the sheet-like adhesive body of the present invention will be specifically described in Examples. All parts used in this example are parts by weight. In the examples, commercially available products (circuit boards, solder, gold wires) and pseudo-processed products were used as semiconductor members. The semiconductor element is a simulated product obtained by cutting a wafer (8 inch diameter, 0.5 mm thickness) by applying partial plating (aluminum) as an electrode equivalent portion.
これらで使用する樹脂組成物は次の通りである。
樹脂組成物１：エポキシ樹脂１１部（ＥＯＣＮ１０２０−５５、日本化薬）、硬化剤７部（ＨＦ−１、明和化成工業）、平均粒径８μｍの球状シリカ８２部（ＳＥ−８、トクヤマ）、硬化促進剤０．２部（ＴＰＰ、サンアプロ）及び表面処理剤０．３部（ＫＢＭ−３０３、信越化学工業）を日本ロール社製２本ロールにて加熱混合したものである。
樹脂組成物２：エポキシ樹脂組成物１において、球状シリカを平均粒径４μｍの細粒タイプ（ＨＰＳ−４、東亞合成）に代えたものである。
The resin composition used in these is as follows.
Resin composition 1 : 11 parts of epoxy resin (EOCN1020-55, Nippon Kayaku), 7 parts of curing agent (HF-1, Meiwa Kasei Kogyo), 82 parts of spherical silica with an average particle size of 8 μm (SE-8, Tokuyama), A hardening accelerator 0.2 part (TPP, Sun Apro) and a surface treatment agent 0.3 part (KBM-303, Shin-Etsu Chemical Co., Ltd.) are heated and mixed in a two-roll manufactured by Nippon Roll.
Resin composition 2 : In the epoxy resin composition 1, the spherical silica is replaced with a fine-grain type (HPS-4, Toagosei Co., Ltd.) having an average particle diameter of 4 μm.
樹脂組成物３：エポキシ樹脂１２部（ＥＰＰＮ５０１、日本化薬）、硬化剤１０部（ＭＥＨ８０００Ｈ、明和化成）、平均粒径１μｍの微粒球状シリカ７８部（ＨＰＳ−１、東亞合成）、硬化促進剤０．５部（ＴＰＰ−Ｋ、北興化学）及び表面処理剤０．４部（ＫＢＭ−６０３、信越化学工業）を栗本工作所製ＳＫニーダーで混合溶融したものである。
樹脂組成物４：エポキシ樹脂組成物３において、微粒球状シリカの配合量を６３部に減量したものである。
樹脂組成物５：エポキシ樹脂組成物８部（ＲＥ−３１０Ｓ、大日本インキ化学工業）、硬化剤７部（ＨＮ５５００、日立化成工業）、平均粒径１０μｍの球状シリカ８５部（ＳＥ−９０２、トクヤマ）、硬化促進剤０．８部（ＨＸ−３０８８、旭化成工業）及び表面処理剤０．５部（ＫＢＭ−４０３、信越化学工業）を愛工舎製プラネタリーミキサーで混合したものである。
樹脂組成物６：エポキシ樹脂組成物５において、球状シリカの配合量を１０部に減量したものである。
Resin composition 3 : 12 parts of epoxy resin (EPPN501, Nippon Kayaku), 10 parts of curing agent (MEH8000H, Meiwa Kasei), 78 parts of fine spherical silica with an average particle size of 1 μm (HPS-1, Toagosei), curing accelerator 0.5 parts (TPP-K, Hokuko Chemical Co., Ltd.) and 0.4 parts of surface treatment agent (KBM-603, Shin-Etsu Chemical Co., Ltd.) are mixed and melted with an SK kneader manufactured by Kurimoto Factory.
Resin composition 4 : In the epoxy resin composition 3, the amount of the fine spherical silica is reduced to 63 parts.
Resin composition 5 : 8 parts of epoxy resin composition (RE-310S, Dainippon Ink and Chemicals), 7 parts of curing agent (HN5500, Hitachi Chemical), 85 parts of spherical silica with an average particle size of 10 μm (SE-902, Tokuyama) ), 0.8 part of a curing accelerator (HX-3088, Asahi Kasei Kogyo) and 0.5 part of a surface treating agent (KBM-403, Shin-Etsu Chemical Co., Ltd.) are mixed with a planetary mixer manufactured by Aikosha.
Resin composition 6 : In the epoxy resin composition 5, the amount of spherical silica is reduced to 10 parts.
本発明のシート状接着体を用いて半導体複合装置を図１のように封止した。該装置は複数の半導体部材を搭載しており、１０は回路基板（ＦＲ−４、利昌工業）、１１は８ｍｍ角の模擬半導体素子、１２は模擬半導体素子の加工品（１１は３層タイプ）である。接着体の１５及び１７が接着材料部であり、それぞれ樹脂組成物３及び樹脂組成物１で構成されている。前者は微粒球状シリカを使用しており注入性に配慮が払われている。１９は遮光性フィルム（ＭＳ−６００Ｃ、出光ユニテック）である。この半導体複合装置は半導体部材の変形もなく、樹脂組成物と隙間なく接着していた。又、該装置の信頼性評価として、吸湿半田試験や冷熱耐湿試験を実施したが不良発生は無かった。１２の寸法は、模擬半導体素子の裏面を厚み０．２５ｍｍに研磨したものであり、１層目は１４ｍｍ角、２層目及び３層目は各々１０ｍｍ角及び６ｍｍ角に切断したものである。又、１１と１２は中心位置で２０ｍｍ並列し搭載されている。 The semiconductor composite device was sealed as shown in FIG. 1 using the sheet-like adhesive of the present invention. The apparatus is equipped with a plurality of semiconductor members, 10 is a circuit board (FR-4, Risho Kogyo), 11 is a simulated semiconductor element of 8 mm square, 12 is a processed product of simulated semiconductor element (11 is a three-layer type) It is. Adhesives 15 and 17 are adhesive material portions, and are composed of the resin composition 3 and the resin composition 1, respectively. The former uses fine spherical silica and pays attention to injectability. 19 is a light-shielding film (MS-600C, Idemitsu Unitech). This semiconductor composite device was bonded to the resin composition without any gap without deformation of the semiconductor member. In addition, as a reliability evaluation of the apparatus, a hygroscopic solder test and a cold / heat resistance test were carried out, but no defect occurred. The dimension 12 is obtained by polishing the back surface of the simulated semiconductor element to a thickness of 0.25 mm. The first layer is cut into 14 mm square, the second layer and the third layer are cut into 10 mm square and 6 mm square, respectively. Moreover, 11 and 12 are mounted 20 mm in parallel at the center position.
従来の移送成形法の一種であるＭＡＰ成形法により、樹脂組成物１を用いて複数の半導体部材を封止した。得られた半導体複合装置の積層部材１１に金線変形や未充填が認められた。又、吸湿半田試験において半導体部材と樹脂組成物との間に剥離不良が発生した。尚、この場合、遮光フィルムは使用していない。 A plurality of semiconductor members were sealed using the resin composition 1 by a MAP molding method which is a kind of conventional transfer molding method. Gold wire deformation and unfilling were observed in the laminated member 11 of the obtained semiconductor composite device. Moreover, in the moisture absorption solder test, peeling failure occurred between the semiconductor member and the resin composition. In this case, no light shielding film is used.
半導体複合装置の信頼性評価における環境条件は次の通りである。
吸湿半田試験：加圧釜（１２５℃・１００％）に７２時間投入後、半田槽（２６０℃）に１０秒２回浸漬させる。
冷熱耐湿試験：冷熱試験機（−６５℃〜１５０℃）で５００サイクル熱衝撃を加えた後、加圧釜（１３５℃・９５％）に１０００時間投入する。
The environmental conditions in the reliability evaluation of the semiconductor composite device are as follows.
Moisture- absorbing solder test : 72 hours in a pressure vessel (125 ° C., 100%), and then immersed twice in a solder bath (260 ° C.) for 10 seconds.
Cooling and humidity resistance test : A thermal shock tester (-65 ° C. to 150 ° C.) is subjected to 500 cycles of thermal shock, and then placed in a pressure kettle (135 ° C./95%) for 1000 hours.
図２のように、複数の半導体部材を本発明の接着体で封止し半導体複合装置を得た。２１、２２は模擬半導体素子であり、２２は半田により回路基板２０にフリップ接合されている。シート状接着体は、２５は樹脂組成物１で、２７は樹脂組成物４で、２９は剥離性フィルム（ルミラー、東レ）で構成されている。２５と２７の厚みは各々０．５ｍｍである。熱圧着後の半導体複合装置は隅々まで樹脂組成物が充填されており、信頼性評価でも不良は発生しなかった。尚、剥離フィルムは熱圧着後に半導体複合装置より取り除いた。２２は模擬半導体素子を裏面研磨し厚み０．７５ｍｍにしたものであり、２１と２２は中心位置で２０ｍｍ横に搭載されている。 As shown in FIG. 2, a plurality of semiconductor members were sealed with the adhesive of the present invention to obtain a semiconductor composite device. Reference numerals 21 and 22 denote simulated semiconductor elements, and 22 is flip-bonded to the circuit board 20 by solder. In the sheet-like adhesive body, 25 is the resin composition 1, 27 is the resin composition 4, and 29 is a peelable film (Lumirror, Toray). Each of 25 and 27 has a thickness of 0.5 mm. The semiconductor composite device after thermocompression bonding was filled with the resin composition every corner, and no defect occurred even in the reliability evaluation. The release film was removed from the semiconductor composite device after thermocompression bonding. 22 is a back surface of the simulated semiconductor element polished to a thickness of 0.75 mm, and 21 and 22 are mounted 20 mm laterally at the center position.
従来の液状成形法に準じて、樹脂組成物４を滴下し半導体部材を封止したところ、回路基板２０と半導体素子２２の半田接合部において、未充填が発生した。又、冷熱耐湿試験において、接合部の破断による不良が多発した。 According to a conventional liquid molding method, the resin composition 4 was dropped and the semiconductor member was sealed. As a result, unfilling occurred at the solder joint between the circuit board 20 and the semiconductor element 22. In the cold and heat resistance test, defects due to the fracture of the joint frequently occurred.
高さが異なる半導体部材、模擬積層コンデンサー３１と模擬半導体素子３２（７ｍｍ角、０．３ｍｍ厚）をシート状接着体により封止した例である（図３）。接着体は、通気性フィルム３９（エクセポール、三菱樹脂）と樹脂組成物１及び２（それぞれ３７、３５の接着材料、厚みはそれぞれ０．３ｍｍと０．７ｍｍ）より構成されている。本実施例の半導体複合装置も熱圧着加工時及び信頼性評価時において全く問題がなかった。細粒シリカは肉薄部への注入、通気性フィルムは気泡排除に優れた効果を示したと思われる。尚、３１は模擬半導体素子（１０ｍｍ角、０．２５ｍｍ厚）を３枚貼り合わせたものであり、３１と３２は中心位置で２０ｍｍ横に配置されている。 This is an example in which semiconductor members having different heights, a simulated multilayer capacitor 31 and a simulated semiconductor element 32 (7 mm square, 0.3 mm thickness) are sealed with a sheet-like adhesive (FIG. 3). The adhesive body is composed of a breathable film 39 (Exepor, Mitsubishi Plastics) and resin compositions 1 and 2 (37 and 35 adhesive materials, respectively, thicknesses are 0.3 mm and 0.7 mm, respectively). The semiconductor composite device of this example also had no problem at the time of thermocompression processing and reliability evaluation. It seems that fine-grained silica had an excellent effect in injecting into the thin part, and the air-permeable film had excellent effects in eliminating bubbles. Incidentally, 31 is a laminate of three simulated semiconductor elements (10 mm square, 0.25 mm thickness), and 31 and 32 are arranged 20 mm laterally at the center position.
このような半導体複合装置を移送成形や液状成形で封止する場合には、外観不良（波状、凹凸状）が大きな問題となっていた。 When such a semiconductor composite device is sealed by transfer molding or liquid molding, appearance defects (waves and irregularities) have been a major problem.
本発明のシート状接着体を用いて半導体複合装置を図４のように封止した。４０は感圧再剥離フィルム（７６０H、寺岡製作所）、４１は中心位置で２０ｍｍ離れた二つの模擬半導体素子（１０ｍｍ角、厚み０．３ｍｍ）であり、電極相当面を４０側に粘着固定している。４５及び４７が接着材料部であり、それぞれ樹脂組成物６（厚み０．１ｍｍ）及び樹脂組成物５（厚み０．９ｍｍ）で構成されている。４８は市販のスライドガラスを４１と同寸法に加工したものであり、４９は実施例２と同じ剥離フィルム２９である。この半導体複合装置は、半導体部材の変形もなく、樹脂組成物と隙間なく接着していた。又、該装置の信頼性評価として、吸湿半田試験や冷熱耐湿試験を実施したが不良発生は無かった。 The semiconductor composite device was sealed as shown in FIG. 4 using the sheet-like adhesive of the present invention. Reference numeral 40 is a pressure-sensitive re-peeling film (760H, Teraoka Seisakusho), and 41 is two simulated semiconductor elements (10 mm square, thickness 0.3 mm) 20 mm apart at the center position. Yes. Reference numerals 45 and 47 denote adhesive material portions, which are respectively composed of a resin composition 6 (thickness 0.1 mm) and a resin composition 5 (thickness 0.9 mm). 48 is a commercially available slide glass processed into the same dimensions as 41, and 49 is the same release film 29 as in Example 2. This semiconductor composite device was bonded to the resin composition without any gap without deformation of the semiconductor member. In addition, as a reliability evaluation of the apparatus, a hygroscopic solder test and a cold / heat resistance test were carried out, but no defect occurred.
図５のように、複数の半導体部材を本発明の接着体で封止し半導体複合装置を得た。５０、５１は実施例４と同配置の同部材（各々４０、４１）である。シート状接着体は、５５が樹脂組成物６（０．１ｍｍ厚）、５７が樹脂組成物５（０．９ｍｍ厚）で、５９は剥離フィルム２９で構成されている。熱圧着後の半導体複合装置は樹脂組成物が完全に充填されており、信頼性評価でも不良は発生しなかった。 As shown in FIG. 5, a plurality of semiconductor members were sealed with the adhesive of the present invention to obtain a semiconductor composite device. 50 and 51 are the same members (40 and 41, respectively) arranged in the same manner as in the fourth embodiment. In the sheet-like adhesive body, 55 is a resin composition 6 (0.1 mm thickness), 57 is a resin composition 5 (0.9 mm thickness), and 59 is a release film 29. The semiconductor composite device after thermocompression bonding was completely filled with the resin composition, and no defect occurred even in the reliability evaluation.
半導体素子搭載部材、６０及び６１（各々４０、４１と同部材）を凹凸加工したシート状接着体により封止した例である（図６）。接着体は、感圧再剥離離型フィルム６９（４０と同部材）と接着材料６７（樹脂組成物５）より構成されている。本実施例の半導体複合装置も熱圧着加工時及び信頼性評価時において問題がなかった。 This is an example in which the semiconductor element mounting members 60 and 61 (the same members as 40 and 41, respectively) are sealed with an uneven processed sheet-like adhesive (FIG. 6). The adhesive body is composed of a pressure-sensitive re-peeling release film 69 (same member as 40) and an adhesive material 67 (resin composition 5). The semiconductor composite device of this example also had no problem during thermocompression processing and reliability evaluation.
実施例４から６の半導体複合装置を従来の成形方法で封止する場合には、外観不良（凹凸、未充填等）や半導体素子の位置ずれが問題となっていた。又、樹脂組成物５のみで封止した場合に比べて反り量は約半分であった。半導体複合装置の表裏面の応力均衡が優れていることが理由だと思われる。 In the case where the semiconductor composite devices of Examples 4 to 6 are sealed by the conventional molding method, appearance defects (unevenness, unfilled, etc.) and misalignment of semiconductor elements have been problems. Further, the amount of warpage was about half compared to the case of sealing only with the resin composition 5. This is probably because the stress balance between the front and back surfaces of the semiconductor composite device is excellent.
本発明により、同じ半導体部材を使用しても従来に比べて抜群に優れた品質を有する半導体複合装置が得られる。これは、半導体部材毎にその特性に合った別々の樹脂組成物で封止するため、全ての半導体部材がその性能を最大限発揮できることを示唆する。今まで、封止技術に係わる問題で組合せ不可であった半導体が使用できるようになり産業上の利用価値は極めて大きい。 According to the present invention, even if the same semiconductor member is used, it is possible to obtain a semiconductor composite device having excellent quality as compared with the prior art. This suggests that all the semiconductor members can exhibit their performance to the maximum because each semiconductor member is sealed with a separate resin composition suitable for the characteristics. Up to now, semiconductors that could not be combined due to problems related to sealing technology can be used, and the industrial utility value is extremely high.
１０、２０、３０ 回路基板
１１、１２、２１、２２、３１、３２、４１、５１、６１ 模擬半導体素子
１５、１７、２５、２７、３５、３７、４５、４７、５５、５７、６７ 樹脂組成物
１９ 機能性フィルム（遮光フィルム）
２９、４９、５９ 機能性フィルム（剥離フィルム）
３９ 機能性フィルム（通気性フィルム）
４０、５０、６０、６９ 機能性フィルム（感圧再剥離フィルム）
４８ スライドガラス加工品
10, 20, 30 Circuit board 11, 12, 21, 22, 31, 32, 41, 51, 61 Simulated semiconductor element 15, 17, 25, 27, 35, 37, 45, 47, 55, 57, 67 Resin composition Item 19 Functional film (light-shielding film)
29, 49, 59 Functional film (release film)
39 Functional film (breathable film)
40, 50, 60, 69 Functional film (pressure-sensitive re-peeling film)
48 Slide glass processed products
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