JP2006111938A5 - Electroless plating apparatus and electroless plating method - Google Patents
Electroless plating apparatus and electroless plating method Download PDFInfo
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本発明は、基板上に無電解めっき液を供給して基板表面、例えば半導体基板の配線金属の表面をめっきするための無電解めっき装置及び無電解めっき方法に関するものである。 The present invention relates to an electroless plating apparatus and an electroless plating method for supplying an electroless plating solution onto a substrate and plating a substrate surface, for example, a surface of a wiring metal of a semiconductor substrate.
本発明はこのような事情の下になされたものであり、その目的は、無電解めっき液の状態の安定化を図り、基板の表面に対して安定しためっき処理をすることのできる無電解めっき装置及び無電解めっき方法を提供することにある。 The present invention has been made under such circumstances, and its purpose is to stabilize the state of the electroless plating solution and to perform stable plating treatment on the surface of the substrate. An apparatus and an electroless plating method are provided.
本発明は、 半導体基板上に形成された配線金属の表面に、当該表面と対向する吐出口からめっき液を供給して無電解めっき処理をする無電解めっき装置において、
基板を被処理面を上に向けて水平姿勢で保持する基板保持部と、
基板の無電解めっき処理が開始された後、この基板の次の基板の無電解めっき処理が開始されるまでの間に、第１の薬液及び第２の薬液を混合して当該次の基板に供給するためのめっき液が生成され、その下流端に吐出口が形成された無電解めっき液の供給路と、
を備えたことを特徴とする。
The present invention provides an electroless plating apparatus for performing electroless plating treatment by supplying a plating solution to a surface of a wiring metal formed on a semiconductor substrate from a discharge port facing the surface.
A substrate holding section for holding the substrate in a horizontal posture with the processing surface facing up ,
After the electroless plating treatment of the substrate is started and before the electroless plating treatment of the next substrate of this substrate is started, the first chemical solution and the second chemical solution are mixed to form the next substrate. An electroless plating solution supply path in which a plating solution for supply is generated and a discharge port is formed at the downstream end thereof;
It is provided with.
本発明の具体的態様としては次の例を挙げることができる。
第１の薬液及び第２の薬液が夫々通流し、前記無電解めっき液の供給路の上流端にて合流する第１の薬液供給路及び第２の薬液供給路と、
前記第１の薬液供給路及び第２の薬液供給路の各々における合流点の近傍に設けられた薬液用開閉手段と、
前記無電解めっき液の供給路における前記吐出口の近傍に設けられためっき液用開閉手段と、
前記基板に対して無電解めっきが行われている間に前記無電解めっき液の供給路内を満たすように薬液を混合し、次の基板が基板保持部に保持された後に無電解めっき液の供給路内のめっき液を当該次の基板の表面に供給するように、前記薬液用開閉手段及びめっき液用開閉手段を制御する制御手段と、を備え、
前記薬液用開閉手段とめっき液用開閉手段との間の供給路内の容積は、１枚の基板に盛られる液量に相当することを特徴とする。
前記無電解めっき液の供給路を、吐出口が基板上のめっき液に接した状態で基板にめっき液を供給する位置と、この処理位置から離れた待機位置との間で相対的に移動させる移動機構を備えたことを特徴とする。
前記無電解めっき液の供給路内のめっき液の温度を調整する供給路温調手段を設けたことを特徴とする。
前記第１の薬液供給路及び第２の薬液供給路において、次に薬液用開閉手段を通って１枚の基板に使用される薬液が満たされている部位を温度調整する手段を設けたことを特徴とする。
The following examples can be given as specific embodiments of the present invention.
A first chemical solution supply path and a second chemical solution supply path through which the first chemical solution and the second chemical solution respectively flow and merge at the upstream end of the supply path of the electroless plating solution;
Chemical solution opening / closing means provided in the vicinity of the junction in each of the first chemical solution supply path and the second chemical solution supply path;
Opening / closing means for plating solution provided in the vicinity of the discharge port in the supply path of the electroless plating solution,
While the electroless plating is being performed on the substrate, the chemical solution is mixed so as to fill the supply path of the electroless plating solution, and after the next substrate is held by the substrate holding portion, the electroless plating solution Control means for controlling the chemical solution opening and closing means and the plating solution opening and closing means so as to supply the plating solution in the supply path to the surface of the next substrate,
The volume in the supply path between the chemical solution opening / closing means and the plating solution opening / closing means corresponds to the amount of liquid deposited on one substrate .
The electroless plating solution supply path is relatively moved between a position where the plating solution is supplied to the substrate in a state where the discharge port is in contact with the plating solution on the substrate and a standby position away from the processing position. A moving mechanism is provided.
A supply path temperature adjusting means for adjusting the temperature of the plating solution in the supply path of the electroless plating solution is provided.
In the first chemical liquid supply path and the second chemical liquid supply path, there is provided means for adjusting the temperature of the portion filled with the chemical liquid used for one substrate through the chemical liquid opening / closing means. Features.
更に本発明は、半導体基板上に形成された配線金属の表面に、当該表面と対向する吐出口からめっき液を供給して無電解めっき処理をする無電解めっき方法において、
基板を被処理面を上に向けて水平姿勢で基板保持部に保持する工程と、
この工程で基板保持部に保持された基板の無電解めっき処理が開始された後、この基板の次の基板の無電解めっき処理が開始されるまでの間に、その下流端に吐出口が形成された無電解めっき液の供給路内において第１の薬液及び第２の薬液を混合して当該次の基板に供給するためのめっき液を生成する工程と、
前記基板保持部に保持された前記次の基板に対して、既に生成されためっき液を前記吐出口から供給する工程と、を備えたことを特徴とする。
Furthermore, the present invention provides an electroless plating method in which a plating solution is supplied to a surface of a wiring metal formed on a semiconductor substrate from a discharge port facing the surface to perform an electroless plating process.
Holding the substrate on the substrate holding unit in a horizontal posture with the processing surface facing up,
After the electroless plating treatment of the substrate held by the substrate holding part in this step is started, the discharge port is formed at the downstream end of the substrate until the electroless plating treatment of the next substrate of this substrate is started. A step of generating a plating solution for mixing the first chemical solution and the second chemical solution in the supply path of the electroless plating solution and supplying the second chemical solution to the next substrate;
Supplying the plating solution already generated to the next substrate held by the substrate holding part from the discharge port.
本発明によれば、基板のめっき処理が開始され、当該基板の次の基板の無電解めっき処理が開始されるまでの間だけ両薬液が混合されるので、言い換えれば無電解めっき処理が行われる直前に薬液が混合されるので、無電解めっき液が不安定な状態で保持されることが極力避けられ、例えば液中析出を防ぐことができる。この結果、常に同等の状態の無電解めっき液を基板表面に供給することができるので安定した無電解めっき処理を行うことができ、基板間における膜厚及び膜質の均一性が向上する。 According to the present invention, since both chemical solutions are mixed until the plating process of the substrate is started and the electroless plating process of the next substrate of the substrate is started, in other words, the electroless plating process is performed. Since the chemical solution is mixed immediately before, it is avoided as much as possible that the electroless plating solution is kept in an unstable state, and for example, precipitation in the solution can be prevented. As a result, since an electroless plating solution in an equivalent state can always be supplied to the substrate surface, a stable electroless plating process can be performed, and the film thickness and film quality uniformity between the substrates can be improved.
ここで前記薬液用開閉手段であるバルブ５１及び６１とめっき液用開閉手段であるバルブ４３との間の無電解めっき液供給路４１内の容積Ｖ１は、１枚のウエハＷを無電解めっき処理するために必要な吐出量Ｖ２（この例では５０ｃｃ）に相当するように設計されている。これは、Ｖ１とＶ２とが揃っているという意味である。またＶ２とは、例えば基板表面が無電解めっきされるために当該表面に盛られる液量とめっき液用開閉手段から前記吐出口に至るまでの容積（液の体積）との合計量である。Ｖ１とＶ２との関係について述べると、Ｖ１がＶ２よりも大きい場合、１回の吐出量をＶ２にすると、めっき液供給路内にめっき液が残ってしまうし、また１回の吐出量をＶ１にすると、必要以上の量が吐出されるので、薬液が無駄になる。逆にＶ１がＶ２よりも小さい場合には、１回の吐出量をＶ２にすると、両薬液供給路の夫々に位置している第１の薬液及び第２の薬液がめっき液供給路に滞留せずに吐出されてしまうので、基板上のめっき液の均一性が低下する。このためＶ１とＶ２とが等しいことが理想であるが、設計上多少差が生じる場合も起こりうる。この場合でもめっき処理の均一性が確保され、またできるだけ薬液の無駄をなくす設計思想であれば、Ｖ１とＶ２とが「揃っている」ことになる。例えば上記の吐出量Ｖ２は、バルブ４３の下流側に液体が存在しない状態で、ウエハＷと上部温調体３との間に無電解めっき液を満たしたときにバルブ４３を通過する液量（１枚のウエハＷの処理に必要な液量）である。言い換えればウエハＷと上部温調体３との間の容積とバルブ４３から吐出口４２までの容積との合計量に相当する。この場合バルブ４３から吐出口４２までの間の無電解めっき液は無駄になるので、バルブ４３はできるだけ吐出口４２に近づけることが好ましく、例えば上部温調体３内に圧電素子を用いて流路を開閉するタイプのバルブを設けるようにしてもよい。
Here, the volume V1 in the electroless plating solution supply path 41 between the valves 51 and 61 serving as the chemical solution opening and closing means and the valve 43 serving as the plating solution opening and closing means is the electroless plating treatment of one wafer W. It is designed to correspond to the discharge amount V2 (50 cc in this example) necessary for this. This means that V1 and V2 are aligned. V2 is the total amount of the liquid accumulated on the surface of the substrate for electroless plating, for example, and the volume (liquid volume) from the plating solution opening / closing means to the discharge port. Describing the relationship between V1 and V2, when V1 is larger than V2, if the discharge amount of one time is V2, the plating solution remains in the plating solution supply path, and the discharge amount of one time is V1. In this case, since the amount more than necessary is discharged, the chemical solution is wasted. On the contrary, when V1 is smaller than V2, when the discharge amount per time is set to V2, the first chemical solution and the second chemical solution located in each of the two chemical solution supply paths stay in the plating solution supply path. Therefore, the uniformity of the plating solution on the substrate is lowered. For this reason, it is ideal that V1 and V2 are equal, but there may be a case where a difference occurs in design. Even in this case, V1 and V2 are “equal” if the design philosophy is to ensure the uniformity of the plating process and to eliminate as much chemical waste as possible. For example, the discharge amount V2 is the amount of liquid that passes through the valve 43 when the electroless plating solution is filled between the wafer W and the upper temperature control body 3 in the state where no liquid exists on the downstream side of the valve 43 ( This is the amount of liquid necessary for processing one wafer W). In other words, this corresponds to the total amount of the volume between the wafer W and the upper temperature adjusting body 3 and the volume from the valve 43 to the discharge port 42. In this case, since the electroless plating solution between the valve 43 and the discharge port 42 is wasted, the valve 43 is preferably as close to the discharge port 42 as possible. For example, a flow path using a piezoelectric element in the upper temperature control body 3 is used. A valve that opens and closes may be provided.
Claims (11)
基板を被処理面を上に向けて水平姿勢で保持する基板保持部と、
基板の無電解めっき処理が開始された後、この基板の次の基板の無電解めっき処理が開始されるまでの間に、第１の薬液及び第２の薬液を混合して当該次の基板に供給するためのめっき液が生成され、その下流端に吐出口が形成された無電解めっき液の供給路と、
を備えたことを特徴とする無電解めっき装置。 In an electroless plating apparatus that performs electroless plating treatment by supplying a plating solution from a discharge port facing the surface to the surface of a wiring metal formed on a semiconductor substrate,
A substrate holding section for holding the substrate in a horizontal posture with the processing surface facing up ,
After the electroless plating treatment of the substrate is started and before the electroless plating treatment of the next substrate of this substrate is started, the first chemical solution and the second chemical solution are mixed to form the next substrate. An electroless plating solution supply path in which a plating solution for supply is generated and a discharge port is formed at the downstream end thereof;
Electroless plating apparatus characterized by comprising a.
前記第１の薬液供給路及び第２の薬液供給路の各々における合流点の近傍に設けられた薬液用開閉手段と、
前記無電解めっき液の供給路における前記吐出口の近傍に設けられためっき液用開閉手段と、
前記基板に対して無電解めっきが行われている間に前記無電解めっき液の供給路内を満たすように薬液を混合し、次の基板が基板保持部に保持された後に無電解めっき液の供給路内のめっき液を当該次の基板の表面に供給するように、前記薬液用開閉手段及びめっき液用開閉手段を制御する制御手段と、を備え、
前記薬液用開閉手段とめっき液用開閉手段との間の供給路内の容積は、１枚の基板に盛られる液量に相当することを特徴とする請求項１記載の無電解めっき装置。 A first chemical solution supply path and a second chemical solution supply path through which the first chemical solution and the second chemical solution respectively flow and merge at the upstream end of the supply path of the electroless plating solution;
Chemical solution opening / closing means provided in the vicinity of the junction in each of the first chemical solution supply path and the second chemical solution supply path;
Opening / closing means for plating solution provided in the vicinity of the discharge port in the supply path of the electroless plating solution,
While the electroless plating is being performed on the substrate, the chemical solution is mixed so as to fill the supply path of the electroless plating solution, and after the next substrate is held by the substrate holding portion, the electroless plating solution Control means for controlling the chemical solution opening and closing means and the plating solution opening and closing means so as to supply the plating solution in the supply path to the surface of the next substrate,
2. The electroless plating apparatus according to claim 1 , wherein the volume in the supply path between the chemical solution opening / closing means and the plating solution opening / closing means corresponds to the amount of liquid deposited on one substrate .
第１の金属塩として硫酸コバルト、塩化コバルト、硫酸ニッケル、塩化ニッケルのいずれか一つ以上の成分を有し、
第２の金属塩としてタングステン酸、タングステン酸アンモニウムのいずれか一つ以上の成分を有し、
錯化剤としてクエン酸、クエン酸ナトリウムのいずれか一つ以上の成分を有し
ｐＨ調整剤として水酸化ナトリウム、ＴＭＡＨのいずれか一つ以上の成分を有することを特徴とする請求項６に記載の無電解めっき装置。 The first chemical solution comprises a first metal salt, a second metal salt, a complexing agent, and a pH adjusting agent,
The first metal salt has at least one component of cobalt sulfate, cobalt chloride, nickel sulfate, nickel chloride,
Having at least one component of tungstic acid or ammonium tungstate as the second metal salt,
Has one or more components of citric acid and sodium citrate as a complexing agent
The electroless plating apparatus according to claim 6, comprising at least one component of sodium hydroxide and TMAH as a pH adjuster.
基板を被処理面を上に向けて水平姿勢で基板保持部に保持する工程と、
この工程で基板保持部に保持された基板の無電解めっき処理が開始された後、この基板の次の基板の無電解めっき処理が開始されるまでの間に、その下流端に吐出口が形成された無電解めっき液の供給路内において第１の薬液及び第２の薬液を混合して当該次の基板に供給するためのめっき液を生成する工程と、
前記基板保持部に保持された前記次の基板に対して、既に生成されためっき液を前記吐出口から供給する工程と、を備えたことを特徴とする無電解めっき方法。 In the electroless plating method of performing electroless plating treatment by supplying a plating solution from a discharge port facing the surface to the surface of the wiring metal formed on the semiconductor substrate,
Holding the substrate on the substrate holding unit in a horizontal posture with the processing surface facing up,
After the electroless plating treatment of the substrate held by the substrate holding part in this step is started, the discharge port is formed at the downstream end of the substrate until the electroless plating treatment of the next substrate of this substrate is started. A step of generating a plating solution for mixing the first chemical solution and the second chemical solution in the supply path of the electroless plating solution and supplying the second chemical solution to the next substrate;
Supplying an already generated plating solution from the discharge port to the next substrate held by the substrate holding part.
第１の薬液及び第２の薬液が夫々通流し、前記無電解めっき液の供給路の上流端にて合流する第１の薬液供給路及び第２の薬液供給路と、前記第１の薬液供給路及び第２の薬液供給路の各々における合流点の近傍に設けられた薬液用開閉手段と、前記無電解めっき液の供給路における前記吐出口の近傍に設けられためっき液用開閉手段と、を用い、
前記基板に対して無電解めっきが行われている間に、無電解めっき液の供給路内を満たすように薬液を混合し、次の基板が基板保持部に保持された後に無電解めっき液の供給路内のめっき液を当該次の基板の表面に供給するように前記薬液用開閉手段及びめっき液用開閉手段を制御する工程であり、
前記薬液用開閉手段とめっき液用開閉手段との間の供給路内の容積は、１枚の基板に盛られる液量に相当することを特徴とする請求項９記載の無電解めっき方法。 The step of mixing the first chemical solution and the second chemical solution to produce a plating solution includes:
A first chemical solution supply path and a second chemical solution supply path through which the first chemical solution and the second chemical solution respectively flow and merge at an upstream end of the supply path of the electroless plating solution, and the first chemical solution supply A chemical solution opening / closing means provided in the vicinity of the junction in each of the path and the second chemical solution supply path, and a plating solution opening / closing means provided in the vicinity of the discharge port in the electroless plating solution supply path, Use
While the electroless plating is being performed on the substrate, the chemical solution is mixed so as to fill the supply path of the electroless plating solution, and after the next substrate is held by the substrate holding portion, the electroless plating solution A step of controlling the chemical solution opening and closing means and the plating solution opening and closing means so as to supply the plating solution in the supply path to the surface of the next substrate.
10. The electroless plating method according to claim 9, wherein the volume in the supply path between the chemical solution opening / closing means and the plating solution opening / closing means corresponds to the amount of liquid deposited on one substrate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004301908A JP2006111938A (en) | 2004-10-15 | 2004-10-15 | Electroless plating apparatus |
| KR1020050095180A KR100751102B1 (en) | 2004-10-15 | 2005-10-11 | Electroless plating apparatus and method |
| US11/248,223 US20060081461A1 (en) | 2004-10-15 | 2005-10-13 | Electroless plating apparatus and method |
| CNA200510109236XA CN1769520A (en) | 2004-10-15 | 2005-10-17 | Electroless plating apparatus and method |
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| JP2004301908A JP2006111938A (en) | 2004-10-15 | 2004-10-15 | Electroless plating apparatus |
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| JP5331096B2 (en) * | 2010-12-27 | 2013-10-30 | 東京エレクトロン株式会社 | Plating equipment |
| CN103103503B (en) * | 2013-01-24 | 2014-11-05 | 北京大学 | Production equipment for preparing semiconductor film on tubular base |
| JP6201029B1 (en) * | 2016-12-26 | 2017-09-20 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | Electroless platinum plating solution and electroless platinum plating method |
| JP7026801B2 (en) * | 2018-08-06 | 2022-02-28 | 東京エレクトロン株式会社 | Board processing equipment and board processing method |
| CN113227453B (en) * | 2018-12-28 | 2024-04-16 | 东京毅力科创株式会社 | Substrate liquid processing apparatus and substrate liquid processing method |
| US20220251709A1 (en) * | 2019-06-17 | 2022-08-11 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| JP7467264B2 (en) | 2020-07-14 | 2024-04-15 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method and nozzle |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410342B2 (en) * | 1997-01-31 | 2003-05-26 | 東京エレクトロン株式会社 | Coating device |
| JPH10226888A (en) * | 1997-02-19 | 1998-08-25 | Matsushita Electric Ind Co Ltd | Electroless nickel plating device |
| JP2001073157A (en) * | 1999-09-08 | 2001-03-21 | Sony Corp | Electroless plating method and device therefor |
| US20020152955A1 (en) * | 1999-12-30 | 2002-10-24 | Yezdi Dordi | Apparatus and method for depositing an electroless solution |
| JP3985858B2 (en) * | 2001-10-17 | 2007-10-03 | 株式会社荏原製作所 | Plating equipment |
| US6843852B2 (en) * | 2002-01-16 | 2005-01-18 | Intel Corporation | Apparatus and method for electroless spray deposition |
| US7341634B2 (en) * | 2002-08-27 | 2008-03-11 | Ebara Corporation | Apparatus for and method of processing substrate |
| JP3495033B1 (en) * | 2002-09-19 | 2004-02-09 | 東京エレクトロン株式会社 | Electroless plating apparatus and electroless plating method |
| JP2004200273A (en) * | 2002-12-17 | 2004-07-15 | Sony Corp | Process for fabricating semiconductor device |
| JP3938356B2 (en) * | 2002-12-24 | 2007-06-27 | 株式会社荏原製作所 | Plating method and substrate processing apparatus |
-
2004
- 2004-10-15 JP JP2004301908A patent/JP2006111938A/en active Pending
-
2005
- 2005-10-11 KR KR1020050095180A patent/KR100751102B1/en active IP Right Grant
- 2005-10-13 US US11/248,223 patent/US20060081461A1/en not_active Abandoned
- 2005-10-17 CN CNA200510109236XA patent/CN1769520A/en active Pending
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