JP2006071801A5 - - Google Patents

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JP2006071801A5
JP2006071801A5 JP2004252881A JP2004252881A JP2006071801A5 JP 2006071801 A5 JP2006071801 A5 JP 2006071801A5 JP 2004252881 A JP2004252881 A JP 2004252881A JP 2004252881 A JP2004252881 A JP 2004252881A JP 2006071801 A5 JP2006071801 A5 JP 2006071801A5
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pattern
electromagnetic wave
semiconductor layer
optical element
waveguide
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JP2004252881A
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JP2006071801A (en
JP4533047B2 (en
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Claims (9)

一部に半導体層を含んだ電磁波導波路と、前記半導体層のバンドギャップエネルギーより高い光子エネルギーを持つ波長の第1の電磁波を、前記半導体層上にパターンを形成して照射する照射部を有し、前記照射部による照射で生じた前記半導体層表面のフォトキャリアの濃度高低パターンが、前記半導体層のバンドギャップエネルギーより低い光子エネルギーを持つ波長の第2の電磁波に対して複素屈折率の異なるパターンを生じさせることによって、前記導波路を伝搬するかこのパターン上に照射される前記第2の電磁波の伝搬状態を制御することを特徴とする光学素子。 An electromagnetic wave waveguide partially including a semiconductor layer, and an irradiation unit that forms a pattern on the semiconductor layer and irradiates a first electromagnetic wave having a photon energy higher than the band gap energy of the semiconductor layer. The pattern of photocarrier concentration on the surface of the semiconductor layer generated by irradiation by the irradiation unit has a complex refractive index different from that of the second electromagnetic wave having a photon energy lower than the band gap energy of the semiconductor layer. An optical element characterized by controlling a propagation state of the second electromagnetic wave propagating through the waveguide or irradiated on the pattern by generating a pattern. 前記照射部は、前記第1の電磁波を出射する光源と、パターンの形成されたパターン形成部材と、前記パターン形成部材のパターンを第1の電磁波の明暗パターンとして前記半導体層に結像する結像系とを有する請求項1記載の光学素子。 Imaging said irradiated portions, which images a light source for emitting the first electromagnetic wave, and the pattern formation member formed of a pattern, the semiconductor layer a pattern of the pattern forming member as light and dark patterns of the first electromagnetic wave 2. The optical element according to claim 1, comprising a system. 前記パターン形成部材は、前記第1の電磁波に対して透明もしくは吸収の小さい媒質に前記第1の電磁波に対して不透明もしくは吸収の大きい物質によってパターンを施した部材、前記第1の電磁波に対する反射率が異なるものによってパターンを施した前記第1の電磁波を反射する部材、或いは前記第1の電磁波に対して透明な媒質上に前記第1の電磁波に対して不透明もしくは吸収が大きい物質によってパターンを施した部材としての液晶表示装置またはガラス上に金属を施した部材である請求項1または2記載の光学素子。 The pattern forming member is a member that is patterned with a material that is opaque or highly absorbing with respect to the first electromagnetic wave in a medium that is transparent or with little absorption with respect to the first electromagnetic wave, and a reflectance with respect to the first electromagnetic wave. pattern member for reflecting said first electromagnetic wave subjected to pattern by different, or the properly be opaque to the first electromagnetic wave on a medium transparent to the first electromagnetic wave by absorption a large material the optical element according to claim 1 or 2, wherein a member which has been subjected to metal in the liquid crystal display device or on glass as a member subjected to. 前記照射部において、前記第1の電磁波のパターンを変化させることによって、前記半導体層の前記第2の電磁波の伝搬制御特性を変更できる様に構成された請求項1乃至3のいずれかに記載の光学素子。 In the irradiation unit, the by changing the first electromagnetic wave pattern according to any one of claims 1 to 3 is configured so as to change the propagation control characteristic of the second wave of the semiconductor layer Optical element. 前記半導体層に照射されるパターンが、回折格子状の明暗パターンであり、前記半導体層表面の前記照射部による照射で生じた明暗パターン部分のフォトキャリアの濃度高低パターンが、前記第2の電磁波に対して、格子定数が一定或いは変更できる回折格子型光結合器として機能する請求項1乃至4のいずれかに記載の光学素子。 The pattern irradiated to the semiconductor layer is a diffraction grating-like light / dark pattern, and the photocarrier concentration high / low pattern of the light / dark pattern portion generated by the irradiation by the irradiation unit on the surface of the semiconductor layer is the second electromagnetic wave. 5. The optical element according to claim 1, wherein the optical element functions as a diffraction grating type optical coupler whose grating constant can be fixed or changed. 前記半導体層表面に第1の電磁波が照射されることによって生ずるフォトキャリアによって、前記導波路を伝搬する前記第2の電磁波が吸収されることを利用して、前記第2の電磁波に対して減衰器または変調器として機能する様に構成された請求項1記載の光学素子。 Attenuation with respect to the second electromagnetic wave by utilizing absorption of the second electromagnetic wave propagating through the waveguide by photocarriers generated by irradiating the surface of the semiconductor layer with the first electromagnetic wave 2. The optical element according to claim 1, wherein the optical element is configured to function as a modulator or a modulator. 請求項5記載の光学素子を回折格子として用い、前記回折格子の格子定数を変更することが出来る様に構成されたことを特徴とする分光器。 6. A spectroscope configured to use the optical element according to claim 5 as a diffraction grating, and to change a grating constant of the diffraction grating. 請求項1記載の光学素子を含み、前記照射部が前記導波路に沿って移動することが出来、前記半導体層上に第1の電磁波をパターンを形成して照射する様に構成されたことを特徴とする装置。 Includes an optical element according to claim 1, wherein said irradiation unit is the waveguide can move along, is configured so as to irradiate the first electromagnetic wave to form a pattern on the semiconductor layer Features device. 一部に半導体層を含んだ電磁波導波路の半導体層上に、前記半導体層のバンドギャップエネルギーより高い光子エネルギーを持つ波長の第1の電磁波をパターンを形成して照射し、前記照射で生じた前記半導体層表面のフォトキャリアの濃度高低パターンが、前記半導体層のバンドギャップエネルギーより低い光子エネルギーを持つ波長の第2の電磁波に対して複素屈折率が異なるパターンを生じさせることによって、前記導波路を伝搬するかこのパターン上に照射される前記第2の電磁波の伝搬状態を制御することを特徴とする電磁波の伝搬状態制御方法。 A pattern of a first electromagnetic wave having a photon energy higher than the band gap energy of the semiconductor layer is formed on the semiconductor layer of the electromagnetic wave waveguide including a semiconductor layer in part , and is generated by the irradiation. By generating a pattern having a different complex refractive index with respect to a second electromagnetic wave having a wavelength having a photon energy lower than the band gap energy of the semiconductor layer, the photocarrier concentration pattern on the surface of the semiconductor layer is different from that of the waveguide. A method for controlling the propagation state of electromagnetic waves, comprising: controlling a propagation state of the second electromagnetic wave propagating on the pattern or irradiating the pattern.
JP2004252881A 2004-08-31 2004-08-31 Optical device for electromagnetic waves Expired - Fee Related JP4533047B2 (en)

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JP2004252881A JP4533047B2 (en) 2004-08-31 2004-08-31 Optical device for electromagnetic waves

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JP2004252881A JP4533047B2 (en) 2004-08-31 2004-08-31 Optical device for electromagnetic waves

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JP2006071801A JP2006071801A (en) 2006-03-16
JP2006071801A5 true JP2006071801A5 (en) 2007-03-15
JP4533047B2 JP4533047B2 (en) 2010-08-25

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JP4533046B2 (en) * 2004-08-31 2010-08-25 キヤノン株式会社 Optical device for terahertz waves
JP4775253B2 (en) * 2006-12-26 2011-09-21 ウシオ電機株式会社 Electromagnetic wave modulator
EP2146241B1 (en) * 2008-07-15 2011-05-18 Danmarks Tekniske Universitet All-optical control of THz radiation in parallel plate waveguides
JP2015064413A (en) 2013-09-24 2015-04-09 富士通株式会社 Optical semiconductor element and manufacturing method therefor

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JPH09179080A (en) * 1995-12-27 1997-07-11 Nippon Telegr & Teleph Corp <Ntt> Optical device
JP2003330051A (en) * 2002-03-29 2003-11-19 Nitto Denko Corp Photonics device and photorefractive polymer
JP4534448B2 (en) * 2003-08-21 2010-09-01 横河電機株式会社 Matrix light switch

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