JP2006066793A - Wafer cleaning method and its device - Google Patents
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本発明は、例えばシリコン半導体基板の製造過程で、棒状のインゴットをワイヤーソーなどで切断し、薄板状のウエハに分離した後、これらウエハの間に残留した切粉や砥粒を含むスラリーなどの汚れを洗浄するためのウエハ洗浄方法、及び、それに使用する洗浄装置に関する。
詳しくは、半導体材料からなる棒状のインゴットの一側面を板状の保持具に接着して複数のウエハに切断分離し、これら切断分離されたウエハ間の空隙を板状の保持具に接着したままで洗浄するウエハ洗浄方法及び洗浄装置に関する。
In the present invention, for example, in the process of manufacturing a silicon semiconductor substrate, a rod-shaped ingot is cut with a wire saw or the like and separated into a thin plate-like wafer, and then a slurry containing chips or abrasive grains remaining between these wafers is used. The present invention relates to a wafer cleaning method for cleaning dirt and a cleaning apparatus used therefor.
Specifically, one side of a bar-shaped ingot made of a semiconductor material is bonded to a plate-shaped holder and cut and separated into a plurality of wafers, and the gap between the cut and separated wafers is bonded to the plate-shaped holder. Relates to a wafer cleaning method and a cleaning apparatus.
従来、この種のウエハ洗浄方法として、ワイヤーソーなどで切断分離された複数のウエハを板状の保治具（板状支持部材）に接着したままで、この板状の保治具を洗浄治具に取り付け、これらを第１の洗浄槽（第１槽）に浸漬させ、エアーでバブリングを行うと共にシャワーを用いて洗油で洗い落した後に、第２の洗浄槽（第２槽）に浸漬して洗油で超音波洗浄し、これに続いて第３の洗浄槽（第３槽）及び第４の洗浄槽（第４槽）に順次浸漬させ、アルカリ系の洗剤などを使用して超音波洗浄し、最後に第５の洗浄槽（第５槽）及び第６の洗浄槽（第６槽）に順次浸漬させ、水を用いて超音波洗浄することにより、ウエハを一枚一枚分離して洗浄用バスケットに詰め替えることなく洗浄可能にしたものがある（例えば、特許文献１参照）。 Conventionally, as this type of wafer cleaning method, a plurality of wafers cut and separated with a wire saw or the like are bonded to a plate-shaped jig (plate-shaped support member), and the plate-shaped jig is used as a cleaning jig. Attach them, immerse them in the first washing tank (first tank), bubbling with air and wash off with oil using a shower, then dip in the second washing tank (second tank) Ultrasonic cleaning with oil washing, followed by soaking in the 3rd cleaning tank (3rd tank) and 4th cleaning tank (4th tank) sequentially, ultrasonic cleaning using alkaline detergent etc. Finally, the wafers are separated one by one by sequentially immersing them in a fifth cleaning tank (fifth tank) and a sixth cleaning tank (sixth tank) and ultrasonically cleaning with water. There is a cleaning basket that can be cleaned without being refilled (see, for example, Patent Document 1).
しかし乍ら、このような従来のウエハ洗浄方法及び洗浄装置では、ワイヤーソーで切断されたウエハの間隔が非常に狭く（３００μｍ）て、切断したウエハ同士が数十枚単位で互いに密着するため、複数の洗浄槽に浸漬させてエアーバブリングやシャワーや超音波洗浄を行っても、部分的に密着したウエハ間へは洗浄液が確実に入り込まないことから、洗浄効果が十分に到達せず、洗浄液の置換もほとんど無いため、汚れ除去は困難であるという問題があった。
この方法で汚れを除去するために、上記エアーバブリングやシャワーや超音波洗浄を強力にした場合には、ウエハの脱落や損傷を発生させる恐れがある。
これと逆に損傷を発生させないためには、タクトタイムを長くするか、タクトタイムを短縮したい場合には、洗浄槽を多段にする必要があって、これら多段の洗浄槽に亘り板状の保持具に接着したブロック状のウエハを短時間で移し替えなければならず、洗浄工程が煩雑で洗浄装置全体の構造が複雑化すると共に専有スペースも広くなるという問題がある。
特に近年では、結晶ロスを最小限にするため、ワイヤが細く砥粒粒径が小さくなる傾向にあるため、ますますウエハ間は狭く（０．２ｍｍ以下）なりつつあり、上記のような洗浄方法は適さなくなってきている。
However, in such a conventional wafer cleaning method and apparatus, the interval between the wafers cut by the wire saw is very narrow (300 μm), and the cut wafers are in close contact with each other in units of several tens of sheets. Even if it is immersed in multiple cleaning tanks and air bubbling, showering or ultrasonic cleaning is performed, the cleaning liquid does not surely enter between the partially adhered wafers, so the cleaning effect does not reach sufficiently, Since there was almost no replacement, there was a problem that it was difficult to remove dirt.
If air bubbling, showering, or ultrasonic cleaning is strengthened in order to remove dirt by this method, the wafer may fall off or be damaged.
On the other hand, in order to prevent damage, if the tact time is increased or the tact time is desired to be shortened, the cleaning tank needs to be multi-staged, and the plate-like holding is maintained over these multi-stage cleaning tanks. The block-shaped wafer adhered to the tool must be transferred in a short time, and there is a problem that the cleaning process is complicated, the structure of the entire cleaning apparatus is complicated, and the exclusive space is widened.
In particular, in recent years, in order to minimize crystal loss, the wire tends to be thin and the abrasive grain size tends to be small, so that the gap between wafers is becoming increasingly narrow (less than 0.2 mm). Is no longer suitable.
本発明のうち請求項１、２記載の発明は、ウエハ間の空隙が非常に狭くてもウエハの脱落や損傷を発生させることなく効率的に洗浄可能にすることを目的としたものである。
請求項３記載の発明は、請求項２に記載の発明の目的に加えて、洗浄度を更に向上させることを目的としたものである。
The inventions according to the first and second aspects of the present invention are intended to enable efficient cleaning without causing dropping or damage of the wafer even if the gap between the wafers is very narrow.
The invention described in claim 3 is intended to further improve the degree of cleaning in addition to the object of the invention described in claim 2.
前述した目的を達成するために、本発明のうち請求項１記載の発明は、板状の保持具に接着したブロック状のウエハを空気中に保持し、このブロック状ウエハの側方からウエハ間の空隙へ向けて洗浄液を噴出させたことを特徴とするウエハ洗浄方法である。
請求項２記載の発明は、板状の保持具が接着したブロック状のウエハを空気中に保持する保持手段を設け、このブロック状ウエハの側方に洗浄液の噴出口をウエハ間の空隙へ向けて配設したウエハ洗浄装置である。
請求項３記載の発明は、請求項２記載の発明の構成に、前記噴出口が、洗浄水を噴射するノズルであり、このノズルをブロック状ウエハの側面に沿って、ウエハ接着側からウエハ自由端へ向け移動させた構成を加えたことを特徴とする。
In order to achieve the above-mentioned object, the invention according to claim 1 of the present invention holds a block-shaped wafer bonded to a plate-shaped holder in the air, and the wafer between the wafers from the side of the block-shaped wafer. The wafer cleaning method is characterized in that a cleaning liquid is ejected toward the gap.
According to a second aspect of the present invention, there is provided holding means for holding in the air a block-shaped wafer to which a plate-shaped holder is bonded, and a cleaning liquid jet is directed to the gap between the wafers on the side of the block-shaped wafer. It is the wafer cleaning device arranged.
According to a third aspect of the present invention, in the configuration of the second aspect of the present invention, the nozzle is a nozzle for injecting cleaning water, and the nozzle is free from the wafer bonding side along the side surface of the block-shaped wafer. It is characterized by adding a structure moved toward the end.
本発明のうち請求項１記載の発明は、板状の保持具が接着したブロック状のウエハを空気中に保持し、このブロック状ウエハの側方からウエハ間の空隙へ向けて洗浄液を噴出させることにより、液中に比べ抵抗が少なく洗浄液の流速を大きくすることが可能で、ブロック状態でもウエハ間の空隙に洗浄液がスムーズに流れ込み、部分的に密着したウエハ間にも流れ込む。
従って、ウエハ間の空隙が非常に狭くてもウエハの脱落や損傷を発生させることなく効率的に洗浄できる。
その結果、複数の洗浄槽に浸漬させてエアーバブリングやシャワーや超音波洗浄を行う従来の方法に比べ、槽数が最小限で済み、洗浄時間、設備投資、スペース、薬液使用量、水使用量を削減できる。
更に、洗浄度の要求品質によっては薬液を使用する必要もないため、コストの削減や環境への負荷軽減に寄与する。
According to the first aspect of the present invention, the block-shaped wafer to which the plate-shaped holder is bonded is held in the air, and the cleaning liquid is ejected from the side of the block-shaped wafer toward the gap between the wafers. As a result, the resistance of the cleaning liquid is less than that in the liquid, and the flow rate of the cleaning liquid can be increased. Even in the block state, the cleaning liquid smoothly flows into the gaps between the wafers and also flows between partially adhered wafers.
Therefore, even if the gap between the wafers is very narrow, the wafer can be efficiently cleaned without causing the wafer to drop off or be damaged.
As a result, the number of tanks can be minimized compared to the conventional method of air bubbling, showering and ultrasonic cleaning by immersing in multiple cleaning tanks, cleaning time, equipment investment, space, chemical usage, water usage Can be reduced.
Furthermore, it is not necessary to use a chemical solution depending on the required quality of the cleanliness, which contributes to cost reduction and environmental load reduction.
請求項２の発明は、板状の保持具が接着したブロック状のウエハを保持手段で空気中に保持し、このブロック状ウエハの側方に配設された噴出口からウエハ間の空隙へ向けて洗浄液を噴出させることにより、液中に比べ抵抗が少なく洗浄液の流速を大きくすることが可能で、ブロック状態でもウエハ間の空隙に洗浄液がスムーズに流れ込み、部分的に密着したウエハ間にも流れ込む。
従って、ウエハ間の空隙が非常に狭くてもウエハの脱落や損傷を発生させることなく効率的に洗浄できる。
その結果、複数の洗浄槽に浸漬させてエアーバブリングやシャワーや超音波洗浄を行う従来の装置に比べ、槽数が最小限で済み、洗浄時間、設備投資、スペース、薬液使用量、水使用量を削減できる。
更に、洗浄度の要求品質によっては薬液を使用する必要もないため、コストの削減や環境への負荷軽減に寄与する。
According to the second aspect of the present invention, the block-shaped wafer to which the plate-shaped holder is bonded is held in the air by the holding means, and is directed from the jet port disposed on the side of the block-shaped wafer toward the gap between the wafers. By jetting the cleaning liquid, it is possible to increase the flow rate of the cleaning liquid with less resistance compared to the liquid, and the cleaning liquid smoothly flows into the gap between the wafers even in the block state, and flows into the partially adhered wafers. .
Therefore, even if the gap between the wafers is very narrow, the wafer can be efficiently cleaned without causing the wafer to drop off or be damaged.
As a result, the number of tanks is minimal compared to conventional equipment that immerses in multiple cleaning tanks and performs air bubbling, showering, and ultrasonic cleaning, cleaning time, capital investment, space, chemical usage, and water usage. Can be reduced.
Furthermore, it is not necessary to use a chemical solution depending on the required quality of the cleanliness, which contributes to cost reduction and environmental load reduction.
請求項３の発明は、請求項２の発明の効果に加えて、噴出口としてノズルをブロック状ウエハの側面沿いにウエハ接着側からウエハ自由端へ向け移動させながら洗浄水を噴射することにより、ウエハ間の空隙全面に亘り洗浄液が一様に行き渡る。
従って、洗浄度を更に向上させることができる。
In addition to the effect of the invention of claim 2, the invention of claim 3 jets cleaning water while moving the nozzle as a jet outlet along the side surface of the block-shaped wafer from the wafer bonding side to the wafer free end, The cleaning liquid spreads uniformly over the entire space between the wafers.
Therefore, the degree of cleaning can be further improved.
本発明のウエハ洗浄方法は、事前のスライス工程において例えばシリコンなどの半導体材料からなる棒状のインゴット（図示せず）がその一側面に板状の保持具Ｈを接着したままでワイヤーソーなどの切断機（図示せず）により約０．１〜０．３ｍｍの間隔で複数のウエハＷに切断分離され、その後の洗浄工程で図１〜図５及び図７に示す如く、これら板状保持具Ｈに接着したブロック状のウエハＷ′を空気中に保持すると共に、このブロック状ウエハＷ′の側方からウエハＷ間の空隙Ｇへ向けて洗浄液を噴出させることにより、各ウエハＷ間の空隙Ｇの全てを板状保持具Ｈに接着したままで洗浄するものである。 In the wafer cleaning method of the present invention, in a prior slicing step, a rod-shaped ingot (not shown) made of a semiconductor material such as silicon, for example, cuts a wire saw or the like while the plate-shaped holder H is adhered to one side surface thereof. A plurality of wafers W are cut and separated by a machine (not shown) at intervals of about 0.1 to 0.3 mm, and in the subsequent cleaning process, as shown in FIGS. The block-shaped wafer W ′ bonded to the wafer W is held in the air, and the cleaning liquid is ejected from the side of the block-shaped wafer W ′ toward the gap G between the wafers W, whereby the gap G between the wafers W is discharged. All of the above are cleaned while adhered to the plate-shaped holder H.
図示例では、円柱形状のインゴット（図示せず）の一側面に切欠形成したオリエンテーションフラットＯＦに、板状保持具Ｈを接着したまま、ワイヤーソーなどの切断機（図示せず）で略円形のウエハＷに切断分離した場合を示している。 In the illustrated example, a substantially circular shape is obtained with a cutting machine (not shown) such as a wire saw while the plate-like holder H is adhered to an orientation flat OF cut out on one side of a cylindrical ingot (not shown). A case where the wafer W is cut and separated is shown.
このような本発明のウエハ洗浄方法に使用する洗浄装置は、図１〜図５及び図７に示す如く、上記板状保持具Ｈが接着したブロック状のウエハＷ′を空気中に保持する保持手段１を設け、このブロック状ウエハＷ′の側方に、例えばノズルなどからなる洗浄液の噴出口２をウエハＷ間の空隙Ｇへ向けて配設している。
以下、本発明の各実施例を図面に基づいて説明する。
As shown in FIGS. 1 to 5 and FIG. 7, the cleaning apparatus used in the wafer cleaning method of the present invention holds a block-like wafer W ′ to which the plate-like holder H is bonded in the air. Means 1 are provided, and a cleaning liquid jet port 2 made of, for example, a nozzle or the like is disposed on the side of the block-shaped wafer W ′ toward the gap G between the wafers W.
Embodiments of the present invention will be described below with reference to the drawings.
この実施例１は、図１（ａ）〜（ｃ）に示す如く、被洗浄物であるウエハＷが接着された板状保持具Ｈを保持手段１で空気中に保持し、このブロック状ウエハＷ′の側面Ｗａ′の１つと対向して、そのインゴットの長さ方向に相当するウエハ配列方向Ｙより短い噴出口２を１つ設け、これらブロック状ウエハＷ′の側面Ｗａ′と噴出口２とを相対的に移動させることにより、この噴出口２からの洗浄液を、上記ウエハ配列方向Ｙ及びそれに直交するウエハ軸方向Ｘへ夫々移動しながら噴出して、ウエハＷ間の空隙Ｇの全てに残留した切り粉や砥粒を含むスラリーなどが洗浄されるようにしている。 In the first embodiment, as shown in FIGS. 1A to 1C, a plate-like holder H to which a wafer W as an object to be cleaned is bonded is held in the air by a holding means 1, and this block-like wafer is used. One jet port 2 shorter than the wafer arrangement direction Y corresponding to the length direction of the ingot is provided so as to face one of the side surfaces Wa ′ of W ′, and the side surface Wa ′ and the jet port 2 of these block-shaped wafers W ′. Are moved in the wafer arrangement direction Y and the wafer axial direction X orthogonal to the wafer arrangement direction Y, respectively, and are ejected to all the gaps G between the wafers W. Residual swarf and slurry containing abrasive grains are cleaned.
図１（ａ）に示す例では、後述する保持手段１によって板状保持具Ｈをブロック状ウエハＷ′が下向きに突出するように吊持し、この吊り下げられたブロック状ウエハＷ′の左右どちらか一方の側面Ｗａ′へ向けて、噴出口２から洗浄液を噴出させると同時に、該噴出口２をウエハ軸方向Ｘ及びウエハ配列方向Ｙへ往復動させている。 In the example shown in FIG. 1 (a), a plate-like holder H is suspended by a holding means 1 described later so that the block-shaped wafer W ′ protrudes downward, and the left and right sides of the suspended block-shaped wafer W ′ are left and right. The cleaning liquid is ejected from the ejection port 2 toward one of the side surfaces Wa ′, and at the same time, the ejection port 2 is reciprocated in the wafer axial direction X and the wafer arrangement direction Y.
図１（ｂ）に示す例では、保持手段１によって板状保持具Ｈをブロック状ウエハＷ′が横向きに突出するように保持し、その上方側面Ｗａ′へ向けて噴出口２から洗浄液を噴出させると同時に、該噴出口２をウエハ軸方向Ｘ及びウエハ配列方向Ｙへ往復動させている。 In the example shown in FIG. 1B, the holding means 1 holds the plate-shaped holder H so that the block-shaped wafer W ′ protrudes sideways, and the cleaning liquid is ejected from the ejection port 2 toward the upper side surface Wa ′. At the same time, the nozzle 2 is reciprocated in the wafer axial direction X and the wafer arrangement direction Y.
図１（ｃ）に示す例では、保持手段１によって板状保持具Ｈをブロック状ウエハＷ′が上向きに突出するように保持し、その左右どちらか一方の側面Ｗａ′へ向けて噴出口２から洗浄液を噴出させると同時に、該噴出口２をウエハ軸方向Ｘ及びウエハ配列方向Ｙへ往復動させている。 In the example shown in FIG. 1 (c), the holding means 1 holds the plate-like holder H so that the block-shaped wafer W ′ protrudes upward, and the jet port 2 faces either the left or right side surface Wa ′. At the same time, the cleaning liquid is ejected from the nozzle 2, and the ejection port 2 is reciprocated in the wafer axial direction X and the wafer arrangement direction Y.
上記保持手段１としては、図示例の場合、図１（ａ）に示すような吸着パッドなどの吸引吸着機構又はそれ以外の例えばロボットハンドなどの従来周知構造の保持機構を用い、その先端を板状保持具Ｈと当接させて着脱自在に係止させることにより、ブロック状ウエハＷ′を液体に浸漬することなく保持している。 As the holding means 1, in the illustrated example, a suction suction mechanism such as a suction pad as shown in FIG. 1A or a holding mechanism having a conventionally well-known structure such as a robot hand, for example, is used, and its tip is a plate. The block-shaped wafer W ′ is held without being immersed in the liquid by being brought into contact with the shaped holder H and detachably locked.
また、この保持手段１及びブロック状ウエハＷ′は、後述する噴出口２から噴出される洗浄液の飛散を考慮して、周囲が仕切壁で囲まれた密閉室（図示せず）内に収納配備することが望ましい。 Further, the holding means 1 and the block-shaped wafer W ′ are accommodated in a sealed chamber (not shown) surrounded by a partition wall in consideration of scattering of cleaning liquid ejected from a later-described ejection port 2. It is desirable to do.
更に必要に応じて、この保持手段１は、上記噴出口２からの洗浄液をウエハＷ間の空隙Ｇ全面に亘り一様に当てるために、ウエハ軸方向Ｘ及びウエハ配列方向Ｙへ移動させたり、図１（ａ）〜（ｃ）に示す如く、ブロック状ウエハＷ′を所定角度（図示例では９０度）ずつ回転移動させても良い。 Further, if necessary, the holding means 1 moves the wafer in the wafer axial direction X and the wafer arrangement direction Y in order to uniformly apply the cleaning liquid from the jet nozzle 2 over the entire gap G between the wafers W. As shown in FIGS. 1A to 1C, the block-shaped wafer W ′ may be rotated by a predetermined angle (90 degrees in the illustrated example).
上記噴出口２としては、図示されるような一般的に使用される市販のホース２ａや先細の筒状体（図示せず）などからなるノズルを用い、その基端を洗浄液の供給源（図示せず）に接続すると共に、該噴出口２をウエハ軸方向Ｘ及びウエハ配列方向Ｙへ夫々直線状に往復動させる移動機構（図示せず）を連設し、コントローラ（図示せず）の作動制御に基づいて、先端口２ｂをウエハ軸方向Ｘ及びウエハ配列方向Ｙへ往復動させながら適宜流量の洗浄液を、ブロック状ウエハＷ′の側面Ｗａ′からウエハＷ間の空隙Ｇへ向けて噴射させている。 As the above-mentioned jet nozzle 2, a nozzle made of a commercially available hose 2 a or a tapered cylindrical body (not shown) that is generally used as shown in the figure is used, and its base end is a supply source of a cleaning liquid (see FIG. (Not shown) and a moving mechanism (not shown) for linearly reciprocating the jet nozzle 2 in the wafer axial direction X and the wafer arranging direction Y, respectively, is connected to operate the controller (not shown). Based on the control, an appropriate flow rate of the cleaning liquid is jetted from the side surface Wa ′ of the block-shaped wafer W ′ toward the gap G between the wafers W while reciprocating the front end port 2b in the wafer axial direction X and the wafer arrangement direction Y. ing.
更に必要に応じて、この噴出口２も、それから噴射される洗浄液をウエハＷ間の空隙Ｇ全面に亘り一様に当てるために、ウエハ軸方向Ｘ及びウエハ配列方向Ｙへ夫々直線状に往復動させるだけでなく、ブロック状ウエハＷ′の上下左右複数の側面Ｗａ′と対向するように所定角度、図示例では９０度ずつ移動させるか、又は１８０℃移動させた上で、ウエハ軸方向Ｘ及びウエハ配列方向Ｙへ往復動させても良い。
図示例のようなブロック状ウエハＷ′が略円柱形状である場合には、その円弧状外側面Ｗａ′に沿って噴出口２を円弧方向へ往復動させることにより、円弧状外側面Ｗａ′と噴出口２が等間隔を保ちながら移動するようにしても良い。
Further, if necessary, the ejection port 2 also reciprocates linearly in the wafer axial direction X and the wafer arrangement direction Y in order to uniformly apply the cleaning liquid ejected therefrom over the entire surface of the gap G between the wafers W. In addition, the wafer is moved by a predetermined angle, 90 degrees in the illustrated example, or 180 ° C. so as to face a plurality of upper, lower, left and right side surfaces Wa ′ of the block-shaped wafer W ′. You may reciprocate in the wafer arrangement direction Y.
When the block-shaped wafer W ′ as shown in the example has a substantially cylindrical shape, the arc-shaped outer surface Wa ′ and the arc-shaped outer surface Wa ′ are reciprocated in the arc direction along the arc-shaped outer surface Wa ′. You may make it the jet nozzle 2 move, maintaining equal intervals.
また、上記洗浄液としては、水（純水）、アルカリ溶液や溶剤や界面活性剤などの薬液、超音波水などの液体が使用可能であり、これら異なる種類の液体を洗浄工程に従って噴出口２から順番に噴出させても良い。 Further, as the cleaning liquid, water (pure water), a chemical liquid such as an alkaline solution, a solvent or a surfactant, or a liquid such as ultrasonic water can be used. You may make it eject in order.
そして、上記保持手段１で保持したブロック状ウエハＷ′の側面Ｗａ′を移動させずに、噴出口２のみを移動させることで両者を相対的に移動させる場合には、図２（ａ）（ｂ）及び図３に示す如く、板状保持具Ｈと接着して切断時の空隙Ｇが確実に存在する（密着していない）ウエハ接着側Ｗ１からウエハ自由端Ｗ２へ向け移動させて、洗浄液をウエハＷ間の空隙Ｇへ流し込むことが望ましい。 When the both sides of the block-like wafer W ′ held by the holding means 1 are moved without moving the side surface Wa ′ without moving the side surface Wa ′, the two are relatively moved as shown in FIG. b) and as shown in FIG. 3, it is moved to the wafer free end W2 from the wafer bonding side W1 where it is bonded to the plate-shaped holder H and the gap G at the time of cutting exists reliably (not in close contact). Is preferably poured into the gap G between the wafers W.
図２（ａ）（ｂ）の場合には、噴出口２をウエハ接着側Ｗ１からウエハ軸方向Ｘへ移動し、ウエハ自由端Ｗ２に到達してから逆方向へ戻した後に、ウエハ配列方向Ｙへ所定長さ移動させて、それ以降は上述した移動を繰り返すことにより、ブロック状ウエハＷ′の側面Ｗａ′全面に亘って洗浄液が噴射されるようにしている。 In the case of FIGS. 2A and 2B, the jet nozzle 2 is moved in the wafer axial direction X from the wafer bonding side W1, and after reaching the wafer free end W2 and returning in the reverse direction, the wafer arrangement direction Y After that, the cleaning liquid is sprayed over the entire side surface Wa ′ of the block-shaped wafer W ′ by repeating the above-described movement.
図３の場合には、ウエハ接着側Ｗ１からウエハ配列方向Ｙへ往復動させてウエハ自由端Ｗ２へ向けジグザグに移動しすることにより、ブロック状ウエハＷ′の側面Ｗａ′全面に亘って洗浄液が噴射されるようにしている。 In the case of FIG. 3, the cleaning liquid is moved over the entire side surface Wa ′ of the block-shaped wafer W ′ by reciprocating from the wafer bonding side W1 in the wafer arrangement direction Y and moving in a zigzag toward the wafer free end W2. It is made to be injected.
また、上記ブロック状ウエハＷ′の側面Ｗａ′と噴出口２との位置関係は、図４に示す如く、該側面Ｗａ′に噴出口２を可能な限り接近させるか、又は接触させることにより、洗浄液を強制的にウエハＷ間の空隙Ｇに導入して、無駄なく洗浄することが好ましい。 Further, the positional relationship between the side surface Wa ′ of the block-shaped wafer W ′ and the ejection port 2 is as shown in FIG. 4 by bringing the ejection port 2 as close as possible to or in contact with the side surface Wa ′. It is preferable that the cleaning liquid is forcibly introduced into the gap G between the wafers W and cleaned without waste.
また更に、前記噴出口２は、その先端口２ｂの幅寸法を、上記ウエハ配列方向Ｙの長さ寸法に対し小さくするなどして、洗浄液の噴射力を高めることにより、図５に示す如く、切断したウエハＷ同士が数十枚単位で互いに密着しても、ウエハＷ間の空隙Ｇを数倍に広げることが可能である。 Furthermore, the jet nozzle 2 has a cleaning liquid jetting force increased by reducing the width dimension of the tip opening 2b relative to the length dimension in the wafer arrangement direction Y, as shown in FIG. Even if the cut wafers W adhere to each other in units of several tens, the gap G between the wafers W can be expanded several times.
次に、斯かるウエハ洗浄方法及び洗浄装置の作動効果について説明する。
先ず、保持手段１で空気中に保持されたブロック状ウエハＷ′の側方に配設された噴出口２からウエハＷ間の空隙Ｇへ向けて洗浄液を噴出させるため、液中に比べ抵抗が少なくて洗浄液の流速を大きくすることが可能となり、ブロック状態でもウエハＷ間の空隙Ｇに洗浄液がスムーズに流れ込み、部分的に密着したウエハＷ間にも流れ込んで洗浄される。
Next, operation effects of the wafer cleaning method and the cleaning apparatus will be described.
First, since the cleaning liquid is ejected from the ejection port 2 disposed on the side of the block-shaped wafer W ′ held in the air by the holding means 1 toward the gap G between the wafers W, resistance is higher than in the liquid. The flow rate of the cleaning liquid can be increased with a small amount, and the cleaning liquid smoothly flows into the gap G between the wafers W even in the block state, and also flows between the partially adhered wafers W for cleaning.
このような作用を確認するために、上述した本発明のウエハ洗浄方法でブロック状ウエハを洗浄したウエハと、板状保持具を接着したままスライスされたブロック状ウエハを洗浄槽に浸漬させて超音波洗浄や揺動を行う従来のウエハ洗浄方法で洗浄したウエハとを比較する実験を行った。
そして、この実験による結果を図６に示す。
In order to confirm such an action, the wafer obtained by cleaning the block-shaped wafer by the above-described wafer cleaning method of the present invention and the block-shaped wafer sliced with the plate-shaped holder adhered are immersed in a cleaning tank to be super Experiments were performed comparing wafers cleaned by conventional wafer cleaning methods that perform sonic cleaning and rocking.
The result of this experiment is shown in FIG.
この実験の条件として、本発明のウエハ洗浄方法では、洗浄液として水道水（市水）を用い、常温環境で毎分２０リットル噴射してブロック状ウエハのノズル洗浄を行った。
これに近い条件とするために、従来のウエハ洗浄方法では、洗浄液として界面活性剤を用い、５０℃の環境で毎分２０リットル循環させ、更に４０キロヘルツの超音波振動と揺動を付加してウエハの洗浄を行った。
As a condition for this experiment, in the wafer cleaning method of the present invention, tap water (city water) was used as a cleaning liquid, and 20 liters per minute was sprayed in a room temperature environment to perform nozzle cleaning of the block-shaped wafer.
In order to make the conditions close to this, the conventional wafer cleaning method uses a surfactant as the cleaning liquid, circulates 20 liters per minute in an environment of 50 ° C., and adds ultrasonic vibration and oscillation of 40 kHz. The wafer was cleaned.
これらの洗浄方法で、同様に汚れが残留したブロック状ウエハの洗浄を開始し、所定時間が経過したところで各ブロック状ウエハを取り出してその洗浄状態を撮影し、夫々の写真を図６の各欄に示している。 With these cleaning methods, the cleaning of the block-like wafers in which dirt remains is similarly started, and after a predetermined time has passed, each block-like wafer is taken out and its cleaning state is photographed. Each photograph is shown in each column of FIG. It shows.
その結果、本発明のウエハ洗浄方法では、洗浄時間が３０分になった時点で所望の洗浄度が得られた。
これに対し、従来のウエハ洗浄方法では、洗浄時間が６０分を経過しても所望の洗浄度が得られなかった。また本発明のウエハ洗浄方法と同様な洗浄結果を得るためには２４０分必要とした。
それにより、ウエハＷ間の空隙Ｇが非常に狭くてもウエハＷの脱落や損傷を発生させることなく効率的に洗浄できることが実証された。
As a result, in the wafer cleaning method of the present invention, a desired cleaning degree was obtained when the cleaning time reached 30 minutes.
On the other hand, in the conventional wafer cleaning method, a desired cleaning degree could not be obtained even if the cleaning time passed 60 minutes. Further, 240 minutes were required to obtain the same cleaning result as the wafer cleaning method of the present invention.
As a result, it has been demonstrated that even if the gap G between the wafers W is very narrow, the wafers W can be efficiently cleaned without causing dropping or damage.
更に、図２及び図３に示す如く、噴出口１としてノズルをブロック状ウエハＷ′の側面沿いにウエハ接着側Ｗ１からウエハ自由端Ｗ２へ向け移動させながら洗浄水を噴射することにより、ウエハＷ間の空隙Ｇ全面に亘り洗浄液が一様に行き渡る。
従って、洗浄度を更に向上できるという利点がある。
Further, as shown in FIGS. 2 and 3, the cleaning water is sprayed while moving the nozzle as the ejection port 1 along the side surface of the block-shaped wafer W ′ from the wafer bonding side W1 toward the wafer free end W2. The cleaning liquid spreads uniformly over the entire gap G.
Therefore, there is an advantage that the degree of cleaning can be further improved.
特に、図５に示す如く、ウエハ配列方向Ｙの長さ寸法に対する噴出口２の先端口２ｂの幅寸法を小さくするなどして洗浄液の噴射力を高めれば、切断したウエハＷ同士が数十枚単位で互いに密着しても、互いに密着したウエハＷ間を強制的に押し広げて洗浄し、本来のウエハＷ間の空隙Ｇを数倍に広げて洗浄できることが実験により解った。
従って、ウエハＷの脱落やウエハＷへの損傷を伴わずに効率的に洗浄できるという利点がある。
In particular, as shown in FIG. 5, if the spraying force of the cleaning liquid is increased by reducing the width dimension of the front end port 2 b of the ejection port 2 with respect to the length dimension in the wafer arrangement direction Y, the cut wafers W are several dozen. It has been experimentally found that even if the wafers are in close contact with each other, the gaps between the wafers W that are in close contact with each other can be forcedly expanded and cleaned, and the gap G between the original wafers W can be expanded several times.
Therefore, there is an advantage that the wafer W can be efficiently cleaned without dropping off or damaging the wafer W.
この実施例２は、図７に示す如く、前記噴出口２としてブロック状ウエハＷ′の側面Ｗａ′の１つと対向する位置に、そのウエハ配列方向Ｙ全長より長いノズル２ｃを１つ設け、このノズル２ｃをウエハ接着側Ｗ１からウエハ自由端Ｗ２までウエハ軸方向Ｘへのみ往復動させることで一括して洗浄する構成が、前記図１〜図５に示した実施例１とは異なり、それ以外の構成は図１〜図５に示した実施例１と同じものである。 In the second embodiment, as shown in FIG. 7, one nozzle 2c longer than the entire length Y of the wafer arrangement direction is provided at the position facing the side surface Wa 'of the block-shaped wafer W' as the ejection port 2. Unlike the first embodiment shown in FIGS. 1 to 5, the configuration in which the nozzle 2c is reciprocated only in the wafer axial direction X from the wafer bonding side W1 to the wafer free end W2 is different from the first embodiment shown in FIGS. Is the same as that of the first embodiment shown in FIGS.
従って、図７に示すものも、上述した図１〜図５に示した実施例１と同じ作用効果が得られるだけでなく、図１〜図５に示した実施例１のように噴出口２をウエハ配列方向Ｙへ往復動させる必要がないから、実施例１よりも洗浄時間を短縮化できると共に、該噴出口２の移動機構（図示せず）を簡略化できるという利点がある。 Accordingly, the embodiment shown in FIG. 7 not only obtains the same operational effects as the first embodiment shown in FIGS. 1 to 5 described above, but also the jet nozzle 2 as in the first embodiment shown in FIGS. Since there is no need to reciprocate the wafer in the wafer arrangement direction Y, the cleaning time can be shortened compared to the first embodiment, and the moving mechanism (not shown) of the jet nozzle 2 can be simplified.
尚、図示例では、被洗浄物であるウエハＷの形状が、オリエンテーションフラットＯＦを切欠形成した略円形である場合を示したが、これに限定されず、棒状インゴットの一側面に板状保持具Ｈを接着したままワイヤーソーなどの切断機で切断分離したウエハＷであれば、オリエンテーションフラットＯＦの無い円形のウエハや矩形のウエハであっても適用できる。
更に、ウエハ洗浄装置の構造も上述したものに限定されず、同様の機能があれば、他の構造であっても良い。
In the illustrated example, the shape of the wafer W to be cleaned is a substantially circular shape in which the orientation flat OF is cut out. However, the shape is not limited to this, and a plate-like holder is provided on one side surface of the rod-shaped ingot. As long as the wafer W is cut and separated with a cutting machine such as a wire saw with H bonded, even a round wafer without an orientation flat OF or a rectangular wafer can be applied.
Further, the structure of the wafer cleaning apparatus is not limited to the above-described structure, and may have another structure as long as it has a similar function.
また前示実施例では、ブロック状ウエハＷ′の側面Ｗａ′の１つと対向して噴出口２を１つのみ配設したが、これに限定されず、複数の側面Ｗａ′と夫々対向する複数の噴出口を配設して、これら複数の噴出口から夫々の側面Ｗａ′へ向けて洗浄液を同時に噴出させるか又はタイミングをずらして噴出させることも可能である。
また更に、前記噴出口２から薬液などの洗浄液を噴射してノズル洗浄した後は、この薬剤などを確実に洗い落とすために、温水の洗浄槽に浸漬させて超音波洗浄や揺動を与えることで洗浄工程を終了し、その後の乾燥工程や剥離工程へ移るようにしても良い。
In the previous embodiment, only one ejection port 2 is provided to face one of the side surfaces Wa ′ of the block-shaped wafer W ′. However, the present invention is not limited to this, and a plurality of the plurality of side surfaces Wa ′ are opposed to each other. It is also possible to dispose a jet of cleaning liquid from the plurality of jets toward each side surface Wa ′, or to jet them at different timings.
Furthermore, after the nozzle 2 is cleaned by spraying a cleaning liquid such as a chemical solution from the jet nozzle 2, it is immersed in a warm water cleaning tank and subjected to ultrasonic cleaning or rocking in order to wash off the chemical or the like. You may make it complete | finish a washing | cleaning process and transfer to the subsequent drying process and peeling process.
Ｗ ウエハ Ｗ′ ブロック状ウエハ
Ｗａ′ 側面 Ｗ１ ウエハ接着側
Ｗ２ ウエハ自由端 Ｇ 空隙
Ｈ 板状保持具 Ｘ ウエハ軸方向
Ｙ ウエハ配列方向 １ 保持手段
２ 噴出口 ２ａ ホース
２ｂ 先端口 ２ｃ ノズル
W Wafer W ′ Block-shaped wafer Wa ′ Side surface W1 Wafer bonding side W2 Wafer free end G Gap H Plate-shaped holder X Wafer axial direction Y Wafer arrangement direction 1 Holding means 2 Spout 2a Hose 2b Tip port 2c Nozzle
Claims (3)
前記板状の保持具（Ｈ）に接着したブロック状のウエハ（Ｗ′）を空気中に保持し、このブロック状ウエハ（Ｗ′）の側方からウエハ（Ｗ）間の空隙（Ｇ）へ向けて洗浄液を噴出させたことを特徴とするウエハ洗浄方法。 One side surface of a rod-shaped ingot made of a semiconductor material is bonded to a plate-shaped holder (H) and cut and separated into a plurality of wafers (W), and gaps (G) between the cut and separated wafers (W) are formed. In the wafer cleaning method of cleaning while adhering to the plate-shaped holder (H),
A block-shaped wafer (W ′) bonded to the plate-shaped holder (H) is held in the air, and from the side of the block-shaped wafer (W ′) to the gap (G) between the wafers (W). A wafer cleaning method, wherein a cleaning liquid is jetted toward the wafer.
前記板状の保持具（Ｈ）が接着したブロック状のウエハ（Ｗ′）を空気中に保持する保持手段（１）を設け、このブロック状ウエハ（Ｗ′）の側方に洗浄液の噴出口（２）をウエハ（Ｗ）間の空隙（Ｇ）へ向けて配設したことを特徴とするウエハ洗浄装置。 One side surface of a rod-shaped ingot made of a semiconductor material is bonded to a plate-shaped holder (H) and cut and separated into a plurality of wafers (W), and gaps (G) between the cut and separated wafers (W) are formed. In a wafer cleaning apparatus for cleaning while adhering to a plate-shaped holder (H),
A holding means (1) for holding the block-shaped wafer (W ′) to which the plate-shaped holder (H) is bonded in air is provided, and a cleaning liquid jet is formed on the side of the block-shaped wafer (W ′). A wafer cleaning apparatus, wherein (2) is disposed toward a gap (G) between wafers (W).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311631A (en) * | 2006-05-19 | 2007-11-29 | Tokyo Electron Ltd | Substrate cleaning method, substrate cleaning apparatus, program, and recording medium |
| DE102007058260A1 (en) * | 2007-11-27 | 2009-05-28 | Gebr. Schmid Gmbh & Co. | Cut wafer block cleaning method for use during manufacture of solar cell, involves turning lateral edges of wafer block and/or wafer about vertical axis, so that cleaning liquid is supplied between wafers |
| WO2009114043A1 (en) * | 2008-03-07 | 2009-09-17 | Automation Technology, Inc. | Solar wafer cleaning systems, apparatus and methods |
| KR20210130410A (en) * | 2020-04-22 | 2021-11-01 | 에스케이실트론 주식회사 | As Sliced Cleaning process automation apparatus |
| EP4302952A1 (en) | 2022-07-07 | 2024-01-10 | Siltronic AG | Method for simultaneously separating a plurality of slices from a workpiece using a wire saw |
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2004
- 2004-08-30 JP JP2004250239A patent/JP2006066793A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311631A (en) * | 2006-05-19 | 2007-11-29 | Tokyo Electron Ltd | Substrate cleaning method, substrate cleaning apparatus, program, and recording medium |
| JP4705517B2 (en) * | 2006-05-19 | 2011-06-22 | 東京エレクトロン株式会社 | Substrate cleaning method, substrate cleaning apparatus, program, and recording medium |
| DE102007058260A1 (en) * | 2007-11-27 | 2009-05-28 | Gebr. Schmid Gmbh & Co. | Cut wafer block cleaning method for use during manufacture of solar cell, involves turning lateral edges of wafer block and/or wafer about vertical axis, so that cleaning liquid is supplied between wafers |
| WO2009114043A1 (en) * | 2008-03-07 | 2009-09-17 | Automation Technology, Inc. | Solar wafer cleaning systems, apparatus and methods |
| KR20210130410A (en) * | 2020-04-22 | 2021-11-01 | 에스케이실트론 주식회사 | As Sliced Cleaning process automation apparatus |
| KR102435925B1 (en) * | 2020-04-22 | 2022-08-25 | 에스케이실트론 주식회사 | As Sliced Cleaning process automation apparatus |
| EP4302952A1 (en) | 2022-07-07 | 2024-01-10 | Siltronic AG | Method for simultaneously separating a plurality of slices from a workpiece using a wire saw |
| WO2024008452A1 (en) | 2022-07-07 | 2024-01-11 | Siltronic Ag | Method for simultaneously slicing a multiplicity of slices from a workpiece by means of a wire saw |
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